Standard sheet and manufacturing method thereof, semiconductor material defect correction method and measurement equipment correction method

Abstract

The invention provides a standard sheet and a manufacturing method thereof, a semiconductor material defect correction method and a measurement equipment correction method, and belongs to the field of semiconductors. The semiconductor material defect correction method comprises the following steps: providing a standard sheet, and obtaining scattering signal intensity corresponding to standard particles of each size so as to establish a function relationship between the scattering signal intensity and the particle size; and acquiring the scattering signal intensity of the defective particles of the semiconductor material, and acquiring the correction size of the defective particles based on the function relationship. And obtaining the target size of the semiconductor material defect particles. According to the invention, a standard sheet with standard particles is manufactured, and then a function relationship between scattering signal intensity and particle size is established. And finally, acquiring the scattering signal intensity of the defective particles of the semiconductor material, and acquiring the correction size of the defective particles based on the function relationship. Therefore, the target size and the corrected size can be compared and corrected, and the accuracy of defect detection is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a standard sheet and a manufacturing method thereof, a semiconductor material defect correction method and a measurement equipment correction method. Background Art

[0002] In the process of manufacturing semiconductor silicon wafers, the quality of single crystal semiconductor materials determines the quality of silicon wafers, so it is extremely important to improve the quality of single crystal semiconductor materials. In the process of crystal pulling, many native defects such as crystal originated particles (COP) and bulk micro defects (BMD) will be generated. Oxygen impurities enter the crystal rod during the crystal pulling process and generally exist in the gaps of the silicon lattice. The oxygen precipitation and induced defects after high-temperature oxidation treatment are called bulk micro defects (BMD), which are one of the most important defects in the preparation of single crystal silicon wafers by the Czochralski method and one of the important indicators for evaluating wafer quality. Its density has an important impact on the yield rate of integrated circuits.

[0003] In order to ensure the quality of the wafer, it is necessary to analyze the defect distribution in the wafer, extract samples from different parts of each single crystal semiconductor material for defect detection, monitor the density, size and distribution of defects in the wafer, find the best single crystal process conditions, reduce the growth defects of single crystal semiconductor materials, and improve wafer quality.

[0004] LSTD testing is a common method for testing COP and BMD distribution. It uses laser scanning tomography technology (Laser Scanning Tomography) to observe crystal defects through an electron microscope (TEM). The measured defect size is tens of nanometers. However, when LSTD detects semiconductor material defects, it lacks calibration of the defect size, which reduces the accuracy of defect detection.

[0005] It should be noted that the information disclosed in the background technology section of the invention is only intended to deepen the understanding of the general background technology of the invention, and should not be regarded as an admission or suggestion in any form that the information constitutes prior art already known to those skilled in the art. Summary of the invention

[0006] The purpose of the present invention is to provide a standard sheet and a method for making the same, a method for correcting semiconductor material defects and a method for correcting measurement equipment, so as to solve the problem that when LSTD detects semiconductor material defects, there is a lack of calibration of the defect size, which reduces the accuracy of defect detection.

[0007] In order to solve the above technical problems, the present invention provides a standard sheet for correcting the detection of defect sizes of semiconductor materials, comprising:

[0008] The main body is an amorphous solid;

[0009] A plurality of standard particles are arranged in the main body, the distance between any standard particle and the surface of the main body is greater than a preset size, and the refractive index of the amorphous solid is different from that of the standard particles.

[0010] Preferably, the standard particles have the same size, and the particle size range of the standard particles is 15 nm to 1000 nm.

[0011] Preferably, the thickness of the main body is 600 μm to 1000 μm, and the distribution density of the standard particles in the main body is E6 to E10 particles / cm 3 .

[0012] Preferably, the ratio of the refractive index of the standard particle to the refractive index of the main body is greater than or equal to 1.2.

[0013] In order to solve the above technical problems, the present invention also provides a standard sheet for correcting the detection of defect sizes of semiconductor materials, comprising:

[0014] The main body is an amorphous solid;

[0015] A plurality of standard particles are layered in the main body, the distance between any standard particle and the surface of the main body is greater than a preset size, and the amorphous solid and the standard particles have different refractive indices.

[0016] Preferably, the standard particle size of each layer is the same, and the standard particle sizes distributed in each layer are different.

[0017] Preferably, the particle size of the standard particles ranges from 15 nm to 1000 nm.

[0018] Preferably, the thickness of the main body is 600 μm to 1000 μm, and the density of the standard particles distributed in the main body is E6 to E10 particles / cm 3 .

[0019] Preferably, the interlayer spacing is not less than 10 μm

[0020] Preferably, the ratio of the refractive index of the standard particle to the refractive index of the main body is greater than or equal to 1.2.

[0021] The present invention also provides a method for making the above-mentioned standard sheet, comprising:

[0022] Standard particles are formed in an amorphous solid to make the standard sheet, wherein the refractive index of the standard particles is different from that of the amorphous solid, and the standard particles are arranged in an area with a preset size away from the surface of the amorphous solid.

[0023] Preferably, the step of forming standard particles in the amorphous solid to prepare the standard sheet comprises:

[0024] A plurality of amorphous solids are provided, and standard particles of the same size are injected into each amorphous solid to make a plurality of standard sheets.

[0025] Preferably, the step of forming standard particles in the amorphous solid to prepare the standard sheet comprises:

[0026] An amorphous solid is provided, which includes multiple amorphous solid layers. Standard particles of different sizes are injected layer by layer into the multiple amorphous solid layers to make standard sheets, wherein the standard particles in each layer of the amorphous solid have the same size.

[0027] Preferably, the amorphous solid layer with a set thickness is formed by casting.

[0028] Preferably, the amorphous solid layer is formed by a vapor deposition method.

[0029] Preferably, the particle size range of the standard particles is 15 nm to 1000 nm, the thickness of the amorphous solid is 600 μm to 1000 μm, and the density of the standard particles distributed in the amorphous solid is E6 to E10 particles / cm 3 .

[0030] The present invention also provides a semiconductor material defect correction method, comprising:

[0031] A set of standard sheets is provided to obtain the scattering signal intensity corresponding to each size of standard particles, so as to establish a functional relationship between the scattering signal intensity and the particle size;

[0032] Obtaining the scattering signal intensity of the defect of the semiconductor material, and obtaining the defect size corresponding to the scattering signal intensity based on the functional relationship to obtain the corrected size of the defect;

[0033] Obtain target size of semiconductor material defects;

[0034] The target size is compared with the correction size to correct the size of the defect.

[0035] Preferably, the functional relationship between the scattering signal intensity and the particle size is: y=ax b , where a is greater than 0 and a≠1, b is greater than 0, and the regression coefficient R 2≥0.85.

[0036] Preferably, the regression coefficient R 2 >0.9.

[0037] Preferably, the semiconductor material defect correction method further comprises:

[0038] Define the position coordinates of the standard particles to correct the position of the defects.

[0039] Preferably, the position coordinates consist of the radial position of the standard particle in the main body and the depth from the surface of the main body.

[0040] The present invention also provides a calibration method for a measuring device, comprising:

[0041] Provide a standard functional relationship between the scattering signal intensity and the particle size under a set input light intensity;

[0042] The device to be calibrated inputs the set input light intensity, and obtains the corresponding scattering signal intensity and particle size to be calibrated function relationship;

[0043] The function relationship to be calibrated is compared with the standard function relationship, and the two function relationships are made consistent by adjusting the input light intensity.

[0044] Compared with the prior art, the standard sheet and its manufacturing method, the semiconductor material defect correction method and the measurement equipment correction method have the following advantages:

[0045] The present invention manufactures a standard sheet with standard particles, and sets standard particles of different sizes in the main body, or sets a plurality of main bodies, and sets standard particles of one size in each main body, so as to correct the detection of defect sizes of semiconductor materials, thereby being able to compare and correct the target size obtained by the LSTD test method with the corrected size, thereby improving the accuracy of defect detection.

[0046] The semiconductor material defect correction method provided by the present invention first provides the standard sheet provided by the present invention, and then establishes a functional relationship between the scattering signal intensity and the particle size. Finally, by obtaining the scattering signal intensity of the defective particles of the semiconductor material, and based on the functional relationship, the corrected size of the defective particles is obtained. Thus, the target size obtained by the LSTD test method can be compared and corrected with the corrected size, thereby improving the accuracy of defect detection.

[0047] The calibration method of the measuring device provided by the present invention establishes a standard functional relationship between the scattering signal intensity and the particle size under a set input light intensity. When the set light intensity is input to the device to be calibrated again, the corresponding functional relationship to be calibrated between the scattering signal intensity and the particle size is obtained. By comparing the functional relationship to be calibrated with the standard functional relationship, it is determined whether the two functional relationships have changed. When the two functional relationships have changed, the two functional relationships can be made consistent by adjusting the input light intensity. Calibration of the measuring device through the above operation can improve the measurement accuracy of the measuring device. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 is a schematic diagram of the structure of a standard sheet in one embodiment of the present invention;

[0049] Figure 2 is a schematic structural diagram of a standard sheet in another embodiment of the present invention;

[0050] Figure 3 is a schematic diagram of the structure of a standard sheet using laser irradiation in one embodiment of the present invention;

[0051] Figure 4 is a flow chart of a semiconductor material defect correction method according to an embodiment of the present invention;

[0052] Figure 5 is a schematic diagram of the scattering signal intensity corresponding to standard particles of different sizes according to one embodiment of the present invention;

[0053] Figure 6 is a functional relationship curve diagram between the scattered signal intensity and the particle size provided in one embodiment of the present invention;

[0054] Figure 7 is a flow chart of a calibration method for a measuring device provided in one embodiment of the present invention;

[0055] In the figure,

[0056] 100-glass sheet; 110-first area;

[0057] 120-second area; 130-third area;

[0058] 200-standard particles; 300-CCD camera. DETAILED DESCRIPTION

[0059] In order to make the purpose, advantages and features of the present invention clearer, the standard sheet and its manufacturing method, and the semiconductor material defect correction method proposed in the present invention are further described in detail in combination with the drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. It should be understood that the drawings in the specification do not necessarily show the specific structure of the present invention in proportion, and the illustrative features used to illustrate certain principles of the present invention in the drawings in the specification will also adopt a slightly simplified drawing method. The specific design features of the present invention disclosed herein include, for example, specific dimensions, directions, positions and shapes, which will be determined in part by the specific application and use environment. And, in the embodiments described below, sometimes the same figure mark is used in common between different drawings to represent the same part or a part with the same function, and its repeated description is omitted. In this specification, similar numbers and letters are used to represent similar items, so once an item is defined in one drawing, it does not need to be further discussed in subsequent drawings.

[0060] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0061] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0062] Ginseng Figure 1 As shown, the present invention discloses a standard sheet for calibrating the detection of defect size of semiconductor materials, comprising: a main body, which is an amorphous solid. Set in the main body, the distance between any standard particle 200 and the surface of the main body is greater than a preset size, and the refractive index of the amorphous solid and the standard particle 200 is different.

[0063] Wherein, the main body is an amorphous solid. The amorphous solid can be a dielectric layer such as a glass sheet made of silicon dioxide, a ceramic made of silicon nitride, etc. In this embodiment, the amorphous solid is preferably a glass made of silicon dioxide. The structure of the main body can be a cylinder, a cuboid, or other irregular cubic figures, or any combination of the above-listed figures. In this embodiment, preferably, the shape of the main body is a cylinder. The semiconductor material can be silicon, silicon carbide, etc. The thickness of the main body is 600μm to 1000μm. That is, the thickness of the glass sheet can be 600μm, 700μm, 800μm, 900μm, or 1000μm, or any value within the range of 600μm to 1000μm.

[0064] The material of the standard particles 200 can be SiC or TiO2, etc., as long as the standard particles 200 can be prevented from dissolving in the amorphous solid and the standard particles 200 can be scattered in the amorphous solid when the irradiation light irradiates the standard film. In this embodiment, preferably, the material of the standard particles 200 is SiC.

[0065] A plurality of standard particles 200 are arranged in the main body, and any standard particle 200 is located in an area greater than 5 μm from the surface of the main body. The standard particles 200 have the same size, and the particle size range of the standard particles 200 is 15 nm to 1000 nm. The particle size surface of the standard particle 200 is the linear size occupied by the spatial range of the standard particle 200. The particle size of the standard particle 200 can be 15 nm, 200 nm, 500 nm, 800 nm, or 1000 nm, or any value within the range of 15 nm to 1000 nm. Preferably, the size range of the standard particle 200 is 15 nanometers to 200 nanometers. Figure 1 As shown, in Figure 1 There are three standard sheets with different sizes of standard particles 200, namely standard sheet (a), standard sheet (b) and standard sheet (c). In each standard sheet, the standard particles 200 are arranged in an area of ​​the main body with a distance greater than 5 μm from the surface. That is, the distance from the surface of any standard particle 200 to the surface of the main body is greater than 5 μm. Figure 1 As shown in the standard sheet (a), the distance d1 between the standard particle 200 and the upper surface of the main body is greater than 5 μm, and the distance d2 between the standard particle 200 and the lower surface of the main body is also greater than 5 μm. It should be noted that any distance between the standard particle 200 and the surface of the main body is greater than 5 μm. The distribution density of the standard particle 200 in the main body is E6 to E10 particles / cm 3 The ratio of the refractive index of the standard particle 200 to the refractive index of the main body is greater than or equal to 1.2, so as to ensure that when the irradiation light irradiates the standard film, the standard particle 200 can be scattered in the amorphous solid.

[0066] Ginseng Figure 2 As shown, the present invention also discloses another standard sheet for correcting the detection of defect sizes of semiconductor materials, including: a main body, which is an amorphous solid. A plurality of standard particles 200 are arranged in layers in the main body, and the distance from any standard particle 200 to the surface of the main body is greater than a preset size, and the refractive index of the amorphous solid and the standard particles 200 is different. The standard particles 200 of each layer have the same size, and the sizes of the standard particles 200 distributed in each layer are different. The particle size range of the standard particles 200 is 15nm to 1000nm. The thickness of the main body is 600μm to 1000μm, and the density of the standard particles 200 distributed in the main body is E6 to E10 / cm 3 The interlayer spacing is not less than 10 μm. The ratio of the refractive index of the standard particle 200 to the refractive index of the main body is greater than or equal to 1.2.

[0067] formed Figure 2 Taking the standard sheet shown as an example, in this embodiment, the main body is a glass sheet 100 as an example for explanation. The main body includes a first area 110, a second area 120 and a third area 130. The sum of the thicknesses of the first area 110, the second area 120 and the third area 130 is in the range of 600μm to 1000μm. A plurality of standard particles 200 of a first size are arranged in the first area 110. Similarly, the second area 120 and the third area 130 are respectively provided with a plurality of standard particles 200 of a second size and a plurality of standard particles 200 of a third size. However, the first size, the second size and the third size are not equal. And the interlayer spacing (such as Figure 2 d6), or the interlayer distance between the standard particles 200 disposed in the second region 120 and the standard particles 200 disposed in the third region 130 (e.g. Figure 2 In addition, the distance d4 between the standard particles 200 disposed in the third region 130 and the top of the main body is greater than 5 μm. The distance d5 between the standard particles 200 disposed in the first region 110 and the bottom of the main body is greater than 5 μm.

[0068] It should be noted that Figure 2 The standard sheet shown is only one embodiment, and the standard sheet of other embodiments may include multiple regions. For example, there may be more than or equal to 3 regions. The sum of the thicknesses of the multiple regions ranges from 600 μm to 1000 μm.

[0069] Ginseng Figure 1 and Figure 2As shown, the present invention also discloses a method for making the standard film as described above, comprising: forming standard particles 200 in an amorphous solid to make the standard film, wherein the ratio of the refractive index of the standard particles 200 to the refractive index of the amorphous solid is greater than or equal to 1.2, the size of the standard particles 200 is 15 nanometers to 1000 nanometers, and the standard particles 200 are arranged in an area greater than 5 microns from the surface of the amorphous solid. The density of the standard particles 200 distributed in the amorphous solid is E6 to E10 / cm 3 Among them, "E6~E10 / cm 3 " means that there are E6 to E10 standard particles 200 per cubic meter of volume.

[0070] The following explanation will be given by assuming that the amorphous solid is a glass sheet 100 and the material of the standard particle 200 is SiC.

[0071] Ginseng Figure 1 As shown, as one of the embodiments, standard particles 200 of different sizes are formed in a glass sheet 100 to make a standard sheet, including: providing a plurality of glass sheets 100, injecting standard particles 200 of the same size into each glass sheet 100 to make a plurality of standard sheets. That is, a plurality of glass sheets 100 are provided, such as a first glass sheet, a second glass sheet..., an Nth glass sheet, where N is an integer greater than 0. Then, a plurality of standard particles 200 of the same size are injected into the first glass sheet to make a standard sheet. Then, a plurality of standard particles 200 of the same size are injected into the second glass sheet to make a standard sheet. And the sizes of the standard particles 200 inside the first glass sheet and the second glass sheet are different. Next, N standard sheets are made according to the above method. That is, the following can be formed: Figure 1 The three standard sheet structures shown in (a), (b) and (c) are shown in the figure. Due to the optical characteristics, the accuracy can only be guaranteed on both sides of 5 microns from the surface. The distance between the standard particles 200 and the surface of the glass sheet 100 is greater than 5 microns, that is, in the formation of Figure 1 In the three standard sheets shown, the distances d1 and d2 between the standard particles 200 and the surface of the glass sheet 100 are greater than 5 micrometers.

[0072] Ginseng Figure 2 As shown in FIG. 1 , as another embodiment, forming standard particles 200 of different sizes in an amorphous solid to make a standard sheet includes: providing an amorphous solid, injecting standard particles 200 of different sizes into the amorphous solid layer by layer to make a standard sheet. That is, providing a glass sheet 100, injecting standard particles 200 of different sizes into the glass sheet 100 layer by layer to make a standard sheet, wherein the standard particles 200 in each layer of the glass sheet 100 have the same size, forming a standard sheet as shown in FIG. Figure 2The structure shown. In the specific production process, first, standard particles 200 of the same size are sprinkled on the surface of the base layer (not shown in the figure), and then glass is poured on the surface of the base layer to form the first area 110. After the first area 110 solidifies, standard particles 200 of the first size are sprinkled on the surface of the first area 110. Next, the second area 120 is poured on the surface of the first area 110 having standard particles 200 by melting and pouring the glass. After the second area 120 solidifies, standard particles 200 of the second size are sprinkled on the surface of the second area 120. Again, the third area 130 is poured on the surface of the second area 120 having standard particles 200 by melting and pouring the glass. Continue to set standard particles 200 of the third size according to the above method until the thickness of the entire glass sheet 100 reaches 600 microns to 1000 microns, so as to form a standard sheet, that is, to form a sheet as shown. Figure 2 The standard sheet has a first region 110, a second region 120 and a third region 130. The distance d4 between the standard particle 200 and the upper surface of the glass sheet 100 and the distance d5 between the standard particle 200 and the lower surface are both greater than 5 micrometers. In addition, after the standard sheet is manufactured, the standard sheet can be polished by CMP grinding.

[0073] Ginseng Figure 2 As shown in FIG. 1 , as another embodiment thereof, for example Figure 2 The standard film shown in the figure can also be produced in the following ways:

[0074] First, standard particles 200 of the same size are sprinkled on the surface of the substrate layer, and then silicon dioxide is deposited on the surface of the substrate layer by vapor deposition to form a Figure 2 The first region 110 is shown in FIG. Standard particles 200 of a first size are sprinkled on the surface of the first region 110. Next, the second region 120 is deposited on the surface of the first region 110 having the standard particles 200 by vapor deposition. Then, standard particles 200 of a second size are sprinkled on the surface of the second region 120. Again, the third region 130 is deposited on the surface of the second region 120 having the standard particles 200 by vapor deposition. The standard particles 200 of a third size are continuously placed according to the above method until the thickness of the entire glass sheet 100 reaches 600 microns to 1000 microns, thereby forming a standard sheet, that is, a standard sheet can be formed as shown in FIG. Figure 2 The structure shown is taken as an example. In this example, a glass sheet layer is deposited on the surface of the glass sheet 100 by chemical vapor deposition. For example, the glass sheet layer can be deposited by introducing SiCl4, and the specific reaction formula is: There is no specific requirement for the flow rate and temperature of SiCl4, as long as silicon oxide can be grown.

[0075] The present invention also discloses a semiconductor material defect correction method, referring to Figures 1 to 6 A specific implementation of a semiconductor material defect correction method disclosed herein includes the following steps S11 to S14.

[0076] Step S11: providing a standard sheet, wherein the standard sheet is provided with standard particles 200 of different sizes, obtaining the scattering signal intensity corresponding to the standard particles 200 of each size, so as to establish a functional relationship between the scattering signal intensity and the particle size.

[0077] Specifically, refer to Figure 4 and Figure 5 As shown, laser is used as follows Figure 5 Each standard film is illuminated in the direction indicated by arrow a. Figure 6 As shown, under each standard particle size condition of 200, the corresponding scattering signal intensity is obtained by the CCD camera 300, so that the functional relationship between the scattering signal intensity and the particle size can be established. The functional relationship between the scattering signal intensity and the particle size is:

[0078] y=ax b , where a is greater than 0 and a≠1, b is greater than 0, and the regression coefficient R 2 ≥0.85. Preferably, the regression coefficient R 2 >0.9.

[0079] Taking the standard film produced above as an example, one of the functional relationships obtained is as follows Figure 6 As shown, the functional relationship is y = 11.56x 0.1667 The regression coefficient R of this function is 2 =1.

[0080] Step S12: Obtain the scattered signal intensity of the defect of the semiconductor material, and obtain the defect size corresponding to the scattered signal intensity based on the functional relationship to obtain the corrected size of the defect.

[0081] Specifically, refer to Figures 4 to 6 As shown, the semiconductor material may be silicon (Si), germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP) and the like. The CCD camera 300 is used to obtain the scattering signal intensity of the defective particles of the semiconductor material. The functional relationship y=11.56x 0.1667 Formed as Figure 6 The curve shown in FIG. 1 can substitute the scattered signal intensity into the functional relationship to infer the corresponding particle size, thereby obtaining the corrected size of the defective particle.

[0082] Step S13: Obtaining a target size of semiconductor material defects.

[0083] Specifically, refer to Figure 6 As shown, the target size of defective particles in semiconductor materials is obtained by the LSTD test method. LSTD (Laser Scattering Tomography Defects) test is a technology used to detect defects in single crystal semiconductor materials. Take a wafer made of silicon material as an example. The specific operation of the LSTD detection method is: along a straight line passing through the center of the wafer, the wafer is cut into two halves, and half of the wafer is placed on the detection platform. The infrared beam is irradiated onto the cross section of the wafer. The infrared light is scattered at the defect and captured by the CCD camera to form a microscopic morphology of the defect. There is a Rayleigh scattering relationship between the scattered light intensity and the defect size. This test is mainly used to identify and characterize the microstructural defects inside the single crystal silicon material. However, due to factors such as the attenuation of laser energy, the LSTD detection method causes errors in detection. Therefore, it is necessary to correct the target size of the defect detected by the LSTD detection method.

[0084] Step S14: Compare the target size with the correction size to correct the size of the defect.

[0085] Specifically, refer to Figure 6 As shown, the target size is compared with the correction size to correct the defect particle size, thereby improving the accuracy of semiconductor material defect particle detection.

[0086] Furthermore, the semiconductor material defect correction method further includes: defining the position coordinates of the standard particle 200 to correct the position of the defect. The position coordinates are composed of the radial position of the standard particle 200 in the main body and the depth from the surface of the main body.

[0087] Specifically, refer to Figure 2 As shown in the figure, the side of the standard film where the laser is incident is defined as the upper surface of the standard film. At the same time, the center point of the upper surface (i.e. Figure 2 The coordinates of the origin are (0, 0). Then the coordinates of the standard particle 200 are (X, Y), where X is the length of the standard particle 200 at the radial position of the main body. Where Y is the depth of the standard particle 200 from the upper surface of the main body. Figure 2 Taking the standard particle 200 at point B as an example, the length of the standard particle 200 at point B in the radial position of the main body is c1. The depth of the standard particle 200 at point B from the upper surface of the main body is c2. Therefore, the position coordinates of the standard particle 200 at point B are (c1, c2). By correcting the position coordinates of the standard particle 200, the position of the defect in the semiconductor material can be corrected. The value range for X can be 0 to 149 microns. The value range for Y can be 5 microns to 800 microns.

[0088] Ginseng Figure 7 As shown, the present invention also discloses a calibration method for a measuring device, comprising the following steps S21 to S23.

[0089] Step S21: providing a standard functional relationship between the scattering signal intensity and the particle size under a set input light intensity.

[0090] Step S22: The device to be calibrated inputs a set input light intensity, and obtains a function relationship between the corresponding scattered signal intensity and the particle size to be calibrated.

[0091] Step S23: Compare the function relationship to be calibrated with the standard function relationship, and make the two function relationships consistent by adjusting the input light intensity. When the standard function relationship is consistent with the function relationship to be calibrated, that is, when the same scattering signal intensity is input, the two functions can obtain equal particle sizes.

[0092] In summary, the above embodiments provide detailed descriptions of different configurations of standard sheets and methods for making them, and methods for correcting semiconductor material defects. Of course, the above descriptions are only descriptions of preferred embodiments of the present invention, and are not limitations on the scope of the present invention. The present invention includes but is not limited to the configurations listed in the above embodiments. Those skilled in the art can draw inferences based on the contents of the above embodiments. Any changes and modifications made by those of ordinary skill in the field of the present invention based on the above disclosures shall fall within the scope of protection of the claims.

Claims

1. A standard sheet for calibrating the detection of defect sizes of semiconductor materials, characterized in that: include: The main body is an amorphous solid; A plurality of standard particles are arranged in the main body, the distance between any standard particle and the surface of the main body is greater than a preset size, and the refractive index of the amorphous solid is different from that of the standard particles.

2. The standard sheet according to claim 1, characterized in that: The standard particles have the same size, and the particle size range of the standard particles is 15nm to 1000nm.

3. The standard sheet according to claim 1, characterized in that: The thickness of the main body is 600 μm to 1000 μm, and the distribution density of the standard particles in the main body is E6 to E10 particles / cm 3 .

4. The standard sheet according to claim 1, characterized in that: The ratio of the refractive index of the standard particle to the refractive index of the main body is greater than or equal to 1.

2.

5. A standard sheet for calibrating the detection of defect sizes of semiconductor materials, characterized in that: include: The main body is an amorphous solid; A plurality of standard particles are layered in the main body, the distance between any standard particle and the surface of the main body is greater than a preset size, and the amorphous solid and the standard particles have different refractive indices.

6. The standard sheet according to claim 5, characterized in that: The standard particle size of each layer is the same, and the standard particle sizes distributed in each layer are different.

7. The standard sheet according to claim 5, characterized in that: The particle size range of the standard particles is 15nm to 1000nm.

8. The standard sheet according to claim 5, characterized in that: The thickness of the main body is 600 μm to 1000 μm, and the density of the standard particles distributed in the main body is E6 to E10 particles / cm 3 .

9. The standard sheet according to claim 5, characterized in that: The interlayer spacing is not less than 10 μm.

10. The standard sheet according to claim 5, characterized in that: The ratio of the refractive index of the standard particle to the refractive index of the main body is greater than or equal to 1.

2.

11. A method for making a standard sheet as claimed in any one of claims 1 to 10, characterized in that: include: Standard particles are formed in an amorphous solid to make the standard sheet, wherein the refractive index of the standard particles is different from that of the amorphous solid, and the standard particles are arranged in an area with a preset size away from the surface of the amorphous solid.

12. The method for making a standard sheet according to claim 11, characterized in that: The step of forming standard particles in amorphous solid to prepare the standard sheet comprises: A plurality of amorphous solids are provided, and standard particles of the same size are injected into each amorphous solid to make a plurality of standard sheets.

13. The method for making a standard sheet according to claim 11, characterized in that: The step of forming standard particles in amorphous solid to prepare the standard sheet comprises: An amorphous solid is provided, which includes multiple amorphous solid layers. Standard particles of different sizes are injected layer by layer into the multiple amorphous solid layers to make standard sheets, wherein the standard particles in each layer of the amorphous solid have the same size.

14. The method for making a standard sheet according to claim 13, characterized in that: An amorphous solid layer with a set thickness is formed by casting.

15. The method for making a standard sheet according to claim 13, characterized in that: The amorphous solid layer is formed by a vapor deposition method.

16. The method for making a standard sheet according to any one of claims 11 to 15, characterized in that: The particle size range of the standard particles is 15nm to 1000nm, the thickness of the amorphous solid is 600 microns to 1000 microns, and the density of the standard particles distributed in the amorphous solid is E6 to E10 particles / cm 3 .

17. A semiconductor material defect correction method, characterized in that: include: Providing a set of standard sheets as described in any one of claims 1 or 2, obtaining the scattering signal intensity corresponding to each size of standard particles, so as to establish a functional relationship between the scattering signal intensity and the particle size; Obtaining the scattering signal intensity of the defect of the semiconductor material, and obtaining the defect size corresponding to the scattering signal intensity based on the functional relationship to obtain the corrected size of the defect; Obtain target size of semiconductor material defects; The target size is compared with the correction size to correct the size of the defect.

18. The semiconductor material defect correction method according to claim 17, characterized in that: The functional relationship between the scattering signal intensity and the particle size is: y = ax b , where a is greater than 0 and a≠1, b is greater than 0, and the regression coefficient R 2 ≥0.

85.

19. The semiconductor material defect correction method according to claim 18, characterized in that: The regression coefficient R 2 >0.

9.

20. The semiconductor material defect correction method according to claim 17, characterized in that: The semiconductor material defect correction method also includes: Define the position coordinates of the standard particles to correct the position of the defects.

21. The semiconductor material defect correction method according to claim 20, characterized in that: The position coordinates are composed of the radial position of the standard particle in the main body and the depth from the surface of the main body.

22. A calibration method for a measuring device, characterized in that: include: Provide a standard functional relationship between the scattering signal intensity and the particle size under a set input light intensity; The device to be calibrated inputs the set input light intensity, and obtains the corresponding scattering signal intensity and particle size to be calibrated function relationship; The function relationship to be calibrated is compared with the standard function relationship, and the two function relationships are made consistent by adjusting the input light intensity.

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