A semiconductor light-emitting element with strain-modulated quantum well

Abstract

The present invention discloses a semiconductor light-emitting element with a strain-modulated quantum well. The element comprises, from bottom to top, a substrate, an n-type semiconductor, an active layer, and a p-type semiconductor. The active layer is a strain-modulated quantum well. The strain-modulated quantum well is a periodic structure composed of well layers and barrier layers, including a first strain-modulated quantum well, a second strain-modulated quantum well, and a third strain-modulated quantum well. The valley position of the bulk modulus of the first strain-modulated quantum well has an upward angle β toward the p-type semiconductor, while the valley position of the bulk modulus of the second strain-modulated quantum well has an upward angle γ toward the p-type semiconductor. The present invention suppresses crystal field band splitting, enhances the ratio of the heavy hole band to the light hole band at the top of the valence band, increases the TE mode ratio of quantum well luminescence, suppresses the TM mode ratio, improves the light extraction efficiency of the light-emitting element, and improves the light decay problem under thermal conditions.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor light-emitting element with a strain-modulated quantum well. Background Art

[0002] Semiconductor components, especially semiconductor light-emitting components, have a wide range of adjustable wavelengths, high luminous efficiency, energy saving and environmental protection, a long service life of more than 100,000 hours, small size, multiple application scenarios, and strong designability. They have gradually replaced incandescent lamps and fluorescent lamps, and have become the light source for ordinary household lighting. They are also widely used in new scenarios, such as indoor high-resolution displays, outdoor displays, Mini-LED, Micro-LED, mobile TV backlights, backlighting, street lights, car headlights, daytime running lights, interior atmosphere lights, flashlights and other application fields.

[0003] Traditional nitride semiconductors are grown on sapphire substrates, which have large lattice mismatch and thermal mismatch, resulting in high defect density and polarization effect, reducing the luminous efficiency of semiconductor light-emitting elements; at the same time, the hole ionization efficiency of traditional nitride semiconductors is much lower than the electron ionization efficiency, resulting in a hole concentration that is more than one order of magnitude lower than the electron concentration. Excess electrons will overflow from the multi-quantum wells to the second conductive semiconductor to produce non-radiative recombination. The low hole ionization efficiency will make it difficult for the holes of the second conductive semiconductor to be effectively injected into the multi-quantum wells. The low efficiency of hole injection into the multi-quantum wells will lead to multiple The luminescence efficiency of the sub-well is low; the nitride semiconductor structure has non-central symmetry, and will produce strong spontaneous polarization along the c-axis direction, superimposed with the piezoelectric polarization effect of the lattice mismatch to form an intrinsic polarization field; this intrinsic polarization field is along the (001) direction, causing the multi-quantum well layer to produce a strong quantum-confined Stark effect, resulting in energy band tilt and spatial separation of electron-hole wave functions, reducing the radiative recombination efficiency of electrons and holes; the refractive index, dielectric constant and other parameters of the semiconductor light-emitting element are greater than those of air, resulting in a small total reflection angle of the light emitted from the quantum well when it is emitted, and a low light extraction efficiency. Summary of the Invention

[0004] The present invention proposes a semiconductor light-emitting element with a strain-modulated quantum well, which suppresses the crystal field splitting band (CH band), enhances the ratio of the heavy hole band to the light hole band at the top of the valence band, increases the TE mode ratio of quantum well luminescence, suppresses the TM mode ratio, improves the light extraction efficiency of the light-emitting element, and improves the light decay problem under thermal state.

[0005] The present invention provides a semiconductor light-emitting element with a strain-modulated quantum well, which comprises, from bottom to top, a substrate, an n-type semiconductor, an active layer, and a p-type semiconductor. The active layer is a strain-modulated quantum well. The strain-modulated quantum well is a periodic structure composed of a well layer and a barrier layer, including a first strain-modulated quantum well, a second strain-modulated quantum well, and a third strain-modulated quantum well.

[0006] The valley position of the bulk modulus of the first strain-modulated quantum well has a rising angle of β toward the p-type semiconductor, the valley position of the bulk modulus of the second strain-modulated quantum well has a rising angle of γ toward the p-type semiconductor, and the valley position of the bulk modulus of the third strain-modulated quantum well has a rising angle of θ toward the p-type semiconductor, wherein: 30°≤β≤γ≤θ≤90°;

[0007] The rising angle of the valley position of the separation energy of the first strain-modulated quantum well toward the p-type semiconductor is ψ, the rising angle of the valley position of the separation energy of the second strain-modulated quantum well toward the p-type semiconductor is δ, and the rising angle of the valley position of the separation energy of the third strain-modulated quantum well toward the p-type semiconductor is ε, wherein: 10°≤ψ≤δ≤ε≤90°;

[0008] The rising angle of the valley position of the deformation potential of the first strain-modulated quantum well toward the p-type semiconductor is η, the rising angle of the valley position of the deformation potential of the second strain-modulated quantum well toward the p-type semiconductor is μ, and the rising angle of the valley position of the deformation potential of the third strain-modulated quantum well toward the p-type semiconductor is ν, wherein: 10°≤η≤μ≤ν≤90°.

[0009] Preferably, the rising angle of the valley position of the peak electron drift rate of the first strain-modulated quantum well toward the p-type semiconductor is ρ, the rising angle of the valley position of the peak electron drift rate of the second strain-modulated quantum well toward the p-type semiconductor is σ, and the rising angle of the valley position of the peak electron drift rate of the third strain-modulated quantum well toward the p-type semiconductor is φ, wherein: 20°≤σ≤ρ≤φ≤90°.

[0010] Preferably, the bulk modulus, separation energy, deformation potential, and rising angle of the valley position of the peak electron drift velocity of the first strain-modulated quantum well toward the p-type semiconductor have the following relationship: 10°≤ψ≤η≤ρ≤β≤90°;

[0011] The bulk modulus, separation energy, deformation potential, and rising angle of the valley position of the peak electron drift velocity of the second strain-modulated quantum well toward the p-type semiconductor direction have the following relationship: 10°≤δ≤μ≤σ≤γ≤90°;

[0012] The bulk modulus, separation energy, deformation potential, and rising angle of the valley position of the peak electron drift velocity of the third strain-modulated quantum well toward the p-type semiconductor have the following relationship: 10°≤ε≤ν≤φ≤θ≤90°.

[0013] Preferably, the bulk elastic modulus, separation energy, deformation potential, and rising angle of the valley position of the peak electron drift velocity of the first strain-modulated quantum well, the second strain-modulated quantum well, and the third strain-modulated quantum well toward the p-type semiconductor have the following relationship: 10°≤ψ≤δ≤ε≤η≤μ≤ν≤ρ≤σ≤φ≤β≤γ≤θ≤90°.

[0014] Preferably, the well layer of the strain modulated quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and the well layer thickness is 5 to 200 angstroms. m; the barrier layer of the strain modulated quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the barrier layer thickness is 10 to 400 angstroms.

[0015] Preferably, the bulk elastic modulus of the well layer of the first strain modulated quantum well is A, the bulk elastic modulus of the barrier layer of the first strain modulated quantum well is B, the bulk elastic modulus of the well layer of the second strain modulated quantum well is C, the bulk elastic modulus of the p-type semiconductor is D, the bulk elastic modulus of the well layer of the third strain modulated quantum well is E, and the bulk elastic modulus of the barrier layer of the third strain modulated quantum well is F, wherein: 50≤E≤C≤A≤B≤F≤D≤800 (GPa); the separation energy of the well layer of the first strain modulated quantum well is G, the separation energy of the barrier layer of the first strain modulated quantum well is H, the separation energy of the well layer of the second strain modulated quantum well is I, the separation energy of the p-type semiconductor is J, the separation energy of the well layer of the third strain modulated quantum well is K, and the separation energy of the barrier layer of the third strain modulated quantum well is L, wherein: 3≤K≤I≤G≤H≤L≤J≤15 (eV).

[0016] Preferably, the deformation potential of the well layer of the first strain modulated quantum well is M, the deformation potential of the barrier layer of the first strain modulated quantum well is N, the deformation potential of the well layer of the second strain modulated quantum well is P, the deformation potential of the p-type semiconductor is Q, the deformation potential of the well layer of the third strain modulated quantum well is R, and the deformation potential of the barrier layer of the third strain modulated quantum well is S, wherein: 2≤R≤P≤M≤N≤S≤Q≤20 (eV); the peak electron drift velocity of the well layer of the first strain modulated quantum well is T, the peak electron drift velocity of the barrier layer of the first strain modulated quantum well is U, the peak electron drift velocity of the well layer of the second strain modulated quantum well is V, the peak electron drift velocity of the p-type semiconductor is W, the peak electron drift velocity of the well layer of the third strain modulated quantum well is O, and the peak electron drift velocity of the barrier layer of the third strain modulated quantum well is Z, wherein: 1E6≤W≤Z≤U≤T≤V≤O≤5E9 (cm / s).

[0017] Preferably, the volume modulus distribution of the strain-modulated quantum well has a curve distribution of function y=A1cos(B1x+C1); the separation energy distribution of the strain-modulated quantum well has a curve distribution of function y=D1cos(E1x+F1); the deformation potential distribution of the strain-modulated quantum well has a curve distribution of function y=G1cos(H1x+J1); the peak electron drift velocity distribution of the strain-modulated quantum well has a curve distribution of function y=K1sin(M1x+N1); the volume modulus distribution, separation energy distribution, deformation potential distribution and peak electron drift velocity distribution of the strain-modulated quantum well have the following relationship: D1≤G1≤K1≤A1.

[0018] Preferably, the n-type semiconductor and the p-type semiconductor include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; the thickness of the n-type semiconductor is 5 to 60,000 angstroms; the thickness of the p-type semiconductor is 10 to 9,000 angstroms.

[0019] Preferably, the substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN xAny one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, and a LiAlO2 / LiGaO2 composite substrate.

[0020] Compared with the prior art, the embodiments of the present invention provide a semiconductor light-emitting element with strain-modulated quantum wells, which has the following beneficial effects: by controlling the bulk elastic modulus, separation energy, deformation potential, and the rising angle of the valley position of the peak electron drift velocity of the first strain-modulated quantum well, the second strain-modulated quantum well, and the third strain-modulated quantum well toward the p-type semiconductor, the strain distribution and strain intensity of the quantum wells are regulated, the crystal field splitting energy band (CH band) is suppressed, the ratio of the heavy hole band to the light hole band at the top of the valence band is enhanced, the TE mode ratio of the quantum well luminescence is increased, the TM mode ratio is suppressed, the light extraction efficiency of the light-emitting element is improved, and the light decay problem under hot state is improved. The light extraction efficiency is increased from 50-70% to 70-95%, and the 1000H light decay under hot state of 85-125 degrees is reduced from 20-40% to 5-20%. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 1 is a schematic structural diagram of a semiconductor light-emitting element with a strain-modulated quantum well according to an embodiment of the present invention;

[0022] Figure 2 This is a SIMS secondary ion mass spectrum of the structure of a semiconductor light-emitting element with a strain-modulated quantum well according to an embodiment of the present invention;

[0023] Figure 3 This is a transmission electron microscope (TEM) image of a semiconductor light-emitting element with a strain-modulated quantum well according to an embodiment of the present invention;

[0024] Figure 4 This is a transmission electron microscope (TEM) image of a semiconductor light-emitting element with a strain-modulated quantum well according to an embodiment of the present invention (quantum well);

[0025] Figure 5 This is a transmission electron microscope (TEM) image of a semiconductor light-emitting element with a strain-modulated quantum well according to an embodiment of the present invention (quantum well);

[0026] Figure 6 This is a transmission electron microscope (TEM) image of a semiconductor light-emitting element with a strain-modulated quantum well according to an embodiment of the present invention (quantum well).

[0027] Reference numerals: 100 : substrate, 101 : n-type semiconductor, 102 : active layer, 102 a : first strain-modulated quantum well, 102 b : second strain-modulated quantum well, 102 c : third strain-modulated quantum well, 103 : p-type semiconductor. DETAILED DESCRIPTION

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0029] In order to solve the above problems, a semiconductor light-emitting element with a strain-modulated quantum well provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0030] Reference Figure 1-6 The present invention provides a semiconductor light-emitting element with a strain-modulated quantum well, which includes, from bottom to top, a substrate 100, an n-type semiconductor 101, an active layer 102, and a p-type semiconductor 103. The active layer 102 is a strain-modulated quantum well. The strain-modulated quantum well is a periodic structure composed of a well layer and a barrier layer, including a first strain-modulated quantum well 102a, a second strain-modulated quantum well 102b, and a third strain-modulated quantum well 102c.

[0031] The valley position of the bulk modulus of the first strain-modulated quantum well 102a has a rising angle of β toward the p-type semiconductor, the valley position of the bulk modulus of the second strain-modulated quantum well 102b has a rising angle of γ toward the p-type semiconductor, and the valley position of the bulk modulus of the third strain-modulated quantum well 102c has a rising angle of θ toward the p-type semiconductor, wherein: 30°≤β≤γ≤θ≤90°;

[0032] The rising angle of the valley position of the separation energy of the first strain-modulated quantum well 102a toward the p-type semiconductor is ψ, the rising angle of the valley position of the separation energy of the second strain-modulated quantum well 102b toward the p-type semiconductor is δ, and the rising angle of the valley position of the separation energy of the third strain-modulated quantum well 102c toward the p-type semiconductor is ε, wherein: 10°≤ψ≤δ≤ε≤90°;

[0033] The rising angle of the valley position of the deformation potential of the first strain-modulated quantum well 102a toward the p-type semiconductor is η, the rising angle of the valley position of the deformation potential of the second strain-modulated quantum well 102b toward the p-type semiconductor is μ, and the rising angle of the valley position of the deformation potential of the third strain-modulated quantum well 102c toward the p-type semiconductor is ν, wherein: 10°≤η≤μ≤ν≤90°.

[0034] The rising angle of the valley position of the peak electron drift rate of the first strain-modulated quantum well 102a toward the p-type semiconductor is ρ, the rising angle of the valley position of the peak electron drift rate of the second strain-modulated quantum well 102b toward the p-type semiconductor is σ, and the rising angle of the valley position of the peak electron drift rate of the third strain-modulated quantum well 102c toward the p-type semiconductor is φ, wherein: 20°≤σ≤ρ≤φ≤90°.

[0035] The bulk modulus, separation energy, deformation potential, and the valley position of the peak electron drift velocity of the first strain-modulated quantum well 102a and the rising angle toward the p-type semiconductor direction have the following relationship: 10°≤ψ≤η≤ρ≤β≤90°;

[0036] The bulk modulus, separation energy, deformation potential, and valley position of the peak electron drift velocity of the second strain-modulated quantum well 102b rising angle toward the p-type semiconductor direction have the following relationship: 10°≤δ≤μ≤σ≤γ≤90°;

[0037] The bulk modulus, separation energy, deformation potential, and rising angle of the valley position of the peak electron drift velocity of the third strain-modulated quantum well 102c toward the p-type semiconductor have the following relationship: 10°≤ε≤ν≤φ≤θ≤90°.

[0038] The bulk elastic modulus, separation energy, deformation potential, and rising angle of the valley position of the peak electron drift velocity toward the p-type semiconductor of the first strain-modulated quantum well 102a, the second strain-modulated quantum well 102b, and the third strain-modulated quantum well 102c have the following relationship: 10°≤ψ≤δ≤ε≤η≤μ≤ν≤ρ≤σ≤φ≤β≤γ≤θ≤90°.

[0039] Preferably, the bulk elastic modulus of the well layer of the first strain modulation quantum well 102a is A, the bulk elastic modulus of the barrier layer of the first strain modulation quantum well 102a is B, the bulk elastic modulus of the well layer of the second strain modulation quantum well 102b is C, the bulk elastic modulus of the p-type semiconductor is D, the bulk elastic modulus of the well layer of the third strain modulation quantum well 102c is E, and the bulk elastic modulus of the barrier layer of the third strain modulation quantum well 102c is F, wherein: 50≤E≤C≤A≤B≤F≤D≤800 (GPa).

[0040] The separation energy of the well layer of the first strain modulated quantum well 102 a is G, the separation energy of the barrier layer of the first strain modulated quantum well 102 a is H, the separation energy of the well layer of the second strain modulated quantum well 102 b is I, the separation energy of the p-type semiconductor is J, the separation energy of the well layer of the third strain modulated quantum well 102 c is K, and the separation energy of the barrier layer of the third strain modulated quantum well 102 c is L, wherein: 3≤K≤I≤G≤H≤L≤J≤15 (eV).

[0041] The deformation potential of the well layer of the first strain modulated quantum well 102a is M, the deformation potential of the barrier layer of the first strain modulated quantum well 102a is N, the deformation potential of the well layer of the second strain modulated quantum well 102b is P, the deformation potential of the p-type semiconductor is Q, the deformation potential of the well layer of the third strain modulated quantum well 102c is R, and the deformation potential of the barrier layer of the third strain modulated quantum well 102c is S, wherein: 2≤R≤P≤M≤N≤S≤Q≤20 (eV).

[0042] The peak electron drift velocity of the well layer of the first strain modulated quantum well 102a is T, the peak electron drift velocity of the barrier layer of the first strain modulated quantum well 102a is U, the peak electron drift velocity of the well layer of the second strain modulated quantum well 102b is V, the peak electron drift velocity of the p-type semiconductor is W, the peak electron drift velocity of the well layer of the third strain modulated quantum well 102c is O, and the peak electron drift velocity of the barrier layer of the third strain modulated quantum well 102c is Z, where: 1E6≤W≤Z≤U≤T≤V≤O≤5E9 (cm / s).

[0043] The volume modulus distribution of the strain-modulated quantum well has a curve distribution of function y=A1cos(B1x+C1); the separation energy distribution of the strain-modulated quantum well has a curve distribution of function y=D1cos(E1x+F1); the deformation potential distribution of the strain-modulated quantum well has a curve distribution of function y=G1cos(H1x+J1); the peak electron drift velocity distribution of the strain-modulated quantum well has a curve distribution of function y=K1sin(M1x+N1); the volume modulus distribution, separation energy distribution, deformation potential distribution and peak electron drift velocity distribution of the strain-modulated quantum well have the following relationship: D1≤G1≤K1≤A1.

[0044] In the present invention, the well layer of the strain modulated quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the well layer thickness is 5 to 200 angstroms. m; the barrier layer of the strain modulated quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the barrier layer thickness is 10 to 400 angstroms.

[0045] In the present invention, the n-type semiconductor 101 and the p-type semiconductor 103 include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; the thickness of the n-type semiconductor 101 is 5 to 60,000 angstroms; the thickness of the p-type semiconductor 103 is 10 to 9,000 angstroms. The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, and a LiAlO2 / LiGaO2 composite substrate.

[0046] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor light-emitting element with a strain-modulated quantum well, comprising, from bottom to top, a substrate (100), an n-type semiconductor (101), an active layer (102), and a p-type semiconductor (103), characterized in that: The active layer (102) is a strain modulation quantum well; the strain modulation quantum well is a periodic structure composed of a well layer and a barrier layer, and includes a first strain modulation quantum well, a second strain modulation quantum well, and a third strain modulation quantum well; The valley position of the bulk modulus of the first strain-modulated quantum well has a rising angle of β toward the p-type semiconductor, the valley position of the bulk modulus of the second strain-modulated quantum well has a rising angle of γ toward the p-type semiconductor, and the valley position of the bulk modulus of the third strain-modulated quantum well has a rising angle of θ toward the p-type semiconductor, wherein: 30°≤β≤γ≤θ≤90°; The rising angle of the valley position of the separation energy of the first strain-modulated quantum well toward the p-type semiconductor is ψ, the rising angle of the valley position of the separation energy of the second strain-modulated quantum well toward the p-type semiconductor is δ, and the rising angle of the valley position of the separation energy of the third strain-modulated quantum well toward the p-type semiconductor is ε, wherein: 10°≤ψ≤δ≤ε≤90°; The rising angle of the valley position of the deformation potential of the first strain-modulated quantum well toward the p-type semiconductor is η, the rising angle of the valley position of the deformation potential of the second strain-modulated quantum well toward the p-type semiconductor is μ, and the rising angle of the valley position of the deformation potential of the third strain-modulated quantum well toward the p-type semiconductor is ν, wherein: 10°≤η≤μ≤ν≤90°.

2. The semiconductor light emitting element with strain-modulated quantum well according to claim 1, characterized in that: The rising angle of the valley position of the peak electron drift rate of the first strain-modulated quantum well toward the p-type semiconductor is ρ, the rising angle of the valley position of the peak electron drift rate of the second strain-modulated quantum well toward the p-type semiconductor is σ, and the rising angle of the valley position of the peak electron drift rate of the third strain-modulated quantum well toward the p-type semiconductor is φ, wherein: 20°≤σ≤ρ≤φ≤90°.

3. The semiconductor light emitting element with strain-modulated quantum well according to claim 2, characterized in that: The bulk modulus, separation energy, deformation potential, and rising angle of the valley position of the peak electron drift velocity of the first strain-modulated quantum well toward the p-type semiconductor direction have the following relationship: 10°≤ψ≤η≤ρ≤β≤90°; The bulk modulus, separation energy, deformation potential, and rising angle of the valley position of the peak electron drift velocity of the second strain-modulated quantum well toward the p-type semiconductor direction have the following relationship: 10°≤δ≤μ≤σ≤γ≤90°; The bulk modulus, separation energy, deformation potential, and rising angle of the valley position of the peak electron drift velocity of the third strain-modulated quantum well toward the p-type semiconductor have the following relationship: 10°≤ε≤ν≤φ≤θ≤90°.

4. The semiconductor light emitting element with strain-modulated quantum well according to claim 3, characterized in that: The bulk elastic modulus, separation energy, deformation potential, and rising angle of the valley position of the peak electron drift velocity of the first strain-modulated quantum well, the second strain-modulated quantum well, and the third strain-modulated quantum well toward the p-type semiconductor have the following relationship: 10°≤ψ≤δ≤ε≤η≤μ≤ν≤ρ≤σ≤φ≤β≤γ≤θ≤90°.

5. The semiconductor light emitting element with strain-modulated quantum well according to claim 1, characterized in that: The well layer of the strain modulated quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the well layer thickness is 5 to 200 angstroms; The barrier layer of the strain modulated quantum well is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the barrier layer thickness is 10 to 400 angstroms.

6. The semiconductor light emitting element with strain-modulated quantum well according to claim 1, characterized in that: The bulk elastic modulus of the well layer of the first strain modulated quantum well is A, the bulk elastic modulus of the barrier layer of the first strain modulated quantum well is B, the bulk elastic modulus of the well layer of the second strain modulated quantum well is C, the bulk elastic modulus of the p-type semiconductor is D, the bulk elastic modulus of the well layer of the third strain modulated quantum well is E, and the bulk elastic modulus of the barrier layer of the third strain modulated quantum well is F, wherein: 50≤E≤C≤A≤B≤F≤D≤800, the unit is GPa; the separation energy of the well layer of the first strain modulated quantum well is G, the separation energy of the barrier layer of the first strain modulated quantum well is H, the separation energy of the well layer of the second strain modulated quantum well is I, the separation energy of the p-type semiconductor is J, the separation energy of the well layer of the third strain modulated quantum well is K, and the separation energy of the barrier layer of the third strain modulated quantum well is L, wherein: 3≤K≤I≤G≤H≤L≤J≤15, the unit is eV.

7. The semiconductor light emitting element with strain-modulated quantum well according to claim 2, characterized in that: The deformation potential of the well layer of the first strain modulated quantum well is M, the deformation potential of the barrier layer of the first strain modulated quantum well is N, the deformation potential of the well layer of the second strain modulated quantum well is P, the deformation potential of the p-type semiconductor is Q, the deformation potential of the well layer of the third strain modulated quantum well is R, and the deformation potential of the barrier layer of the third strain modulated quantum well is S, wherein: 2≤R≤P≤M≤N≤S≤Q≤20, the unit is eV; the peak electron drift velocity of the well layer of the first strain modulated quantum well is T, the peak electron drift velocity of the barrier layer of the first strain modulated quantum well is U, the peak electron drift velocity of the well layer of the second strain modulated quantum well is V, the peak electron drift velocity of the p-type semiconductor is W, the peak electron drift velocity of the well layer of the third strain modulated quantum well is O, and the peak electron drift velocity of the barrier layer of the third strain modulated quantum well is Z, wherein: 1E6≤W≤Z≤U≤T≤V≤O≤5E9, the unit is cm / s.

8. The semiconductor light emitting element with strain-modulated quantum well according to claim 1, characterized in that: The n-type semiconductor (101) and the p-type semiconductor (103) include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; the thickness of the n-type semiconductor (101) is 5 to 60,000 angstroms; the thickness of the p-type semiconductor (103) is 10 to 9,000 angstroms.

9. The semiconductor light emitting element with strain-modulated quantum well according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, and a LiAlO2 / LiGaO2 composite substrate.

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