A gallium nitride-based semiconductor laser element having a hole expansion and injection layer

Abstract

The application discloses a gallium nitride-based semiconductor laser element with a hole expansion and injection layer, which comprises, from bottom to top, a substrate, a lower cladding layer, a lower wave layer, a quantum well, an upper waveguide layer, an upper cladding layer, and a hole expansion and injection layer between the upper waveguide layer and the upper cladding layer; the peak position of the peak rate electric field of the hole expansion and injection layer is inclined downward to the upper cladding layer at an angle of α, the peak position of the peak rate electric field of the hole expansion and injection layer is inclined downward to the quantum well at an angle of β, and the peak position of the peak rate electric field of the upper cladding layer is inclined downward to the quantum well at an angle of γ, wherein 30°≤γ≤β≤α≤90°. The application has the dual functions of improving hole injection efficiency and blocking electron overflow, reduces the threshold current of the laser, and improves the slope efficiency and the limiting factor of the laser.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a gallium nitride-based semiconductor laser element with a hole expansion and injection layer. Background Art

[0002] Lasers are widely used in laser displays, laser televisions, laser projectors, communications, medical treatment, weaponry, guidance, rangefinders, spectral analysis, cutting, precision welding, high-density optical storage, and other fields. There are many different types of lasers, classified in various ways, including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers offer advantages such as small size, high efficiency, light weight, excellent stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes.

[0004] 1) Laser is generated by stimulated emission of carriers, with a small spectral half-width and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, and the output power of a single light-emitting diode is in the mW level.

[0005] 2) The current density of the laser is up to KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation. The energy of the induced photon should be equal to the difference in the energy levels of the electron transition, and the photon and the induced photon are completely coherent light;

[0007] 4) Different principles: Light-emitting diodes generate radiative recombination light when electrons and holes jump to quantum wells or pn junctions under the action of external voltage, while lasers require that lasing conditions be met before lasing. The carrier inversion distribution in the active region must be met, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] The nitride semiconductor laser has the following problems: the light waveguide impurity absorption loss of the violet laser is high, which causes the internal optical loss to rise, resulting in the decline of the laser slope efficiency and the increase of the threshold current; the electron hole in the quantum well is seriously asymmetric and mismatched, the electron leakage and carrier delocalization, the hole transport in the quantum well is more difficult, the carrier injection is uneven, the gain is uneven, the laser gain spectrum is widened, the peak gain is reduced, resulting in the increase of the laser threshold current; the non-radiative recombination loss and the free carrier absorption in the active region of the violet laser generate a large amount of heat, if the thermal conductivity of the laser is low, the heat dissipation is poor, and the temperature characteristic is poor, the thermal mismatch between the semiconductor epitaxial layers will be aggravated, resulting in the problems of the increase of the threshold current, the decline of the output optical power and the slope efficiency, etc. SUMMARY

[0009] The application provides a gallium nitride-based semiconductor laser element with a hole expansion and injection layer, which improves the hole injection efficiency and the function of blocking electron overflow, reduces the threshold current of the laser, and improves the slope efficiency and the limiting factor of the laser.

[0010] The gallium nitride-based semiconductor laser element with a hole expansion and injection layer comprises, from bottom to top, a substrate, a lower cladding layer, a lower wave layer, a quantum well, an upper waveguide layer, and an upper cladding layer, wherein the upper waveguide layer and the upper cladding layer have a hole expansion and injection layer therebetween.

[0011] The falling angle of the peak position of the peak rate electric field of the hole expansion and injection layer to the upper cladding layer direction is alpha, the falling angle of the peak position of the peak rate electric field of the hole expansion and injection layer to the quantum well direction is beta, and the falling angle of the peak position of the peak rate electric field of the upper cladding layer to the quantum well direction is gamma, wherein 30°≤ gamma ≤ beta ≤ alpha ≤ 90°.

[0012] The rising angle of the valley position of the recombination coefficient of the hole expansion and injection layer to the upper cladding layer direction is theta, the rising angle of the valley position of the recombination coefficient of the hole expansion and injection layer to the quantum well direction is delta, and the rising angle of the valley position of the recombination coefficient of the upper cladding layer to the quantum well direction is sigma, wherein 25°≤ sigma ≤ delta ≤ theta ≤ 90°.

[0013] The falling angle of the peak position of the separation energy of the hole expansion and injection layer to the upper cladding layer direction is phi, the falling angle of the peak position of the separation energy of the hole expansion and injection layer to the quantum well direction is psi, and the falling angle of the peak position of the separation energy of the upper cladding layer to the quantum well direction is mu, wherein 10°≤ mu ≤ psi ≤ phi ≤ 90°.

[0014] The rising angle of the valley position of the density of the hole expansion and injection layer to the upper cladding layer direction is υ, the rising angle of the valley position of the density of the hole expansion and injection layer to the quantum well direction is p, the rising angle of the valley position of the density of the upper cladding layer to the quantum well direction is ω, wherein: 20°≤ω≤p≤υ≤90°.

[0015] Preferably, the falling angle of the peak position of the peak rate electric field, the separation energy of the hole expansion and injection layer to the upper cladding layer direction, the rising angle of the valley position of the radiation recombination coefficient, the density of the hole expansion and injection layer to the upper cladding layer direction have the following relationship: 10°≤φ≤υ≤θ≤α≤90°.

[0016] Preferably, the falling angle of the peak position of the peak rate electric field, the separation energy of the hole expansion and injection layer to the quantum well direction, the rising angle of the valley position of the radiation recombination coefficient, the density of the hole expansion and injection layer to the quantum well direction have the following relationship: 10°≤ψ≤p≤δ≤β≤90°.

[0017] Preferably, the falling angle of the peak position of the peak rate electric field, the separation energy of the upper cladding layer to the quantum well direction, the rising angle of the valley position of the radiation recombination coefficient, the density of the upper cladding layer to the quantum well direction have the following relationship: 10°≤μ≤ω≤σ≤γ≤90°.

[0018] Preferably, the falling angle of the peak position of the peak rate electric field, the separation energy of the hole expansion and injection layer to the upper cladding layer direction, the rising angle of the valley position of the radiation recombination coefficient, the density of the hole expansion and injection layer to the upper cladding layer direction, the falling angle of the peak position of the peak rate electric field, the separation energy of the hole expansion and injection layer to the quantum well direction, the rising angle of the valley position of the radiation recombination coefficient, the density of the hole expansion and injection layer to the quantum well direction, the falling angle of the peak position of the peak rate electric field, the separation energy of the upper cladding layer to the quantum well direction, the rising angle of the valley position of the radiation recombination coefficient, the density of the upper cladding layer to the quantum well direction have the following relationship: 10°≤μ≤ψ≤φ≤ω≤p≤υ≤σ≤δ≤θ≤γ≤β≤α≤90°.

[0019] Preferably, the hole expansion and injection layer is any one or any combination of AlGaN, AlInGaN, AlN, GaN, AlInN, InGaN.

[0020] Preferably, the peak rate electric field distribution of the hole expansion and injection layer has a third quadrant curve distribution of the function y=sinx / x; the separation energy distribution of the hole expansion and injection layer has a function y=x 2sinx first quadrant curve distribution; the hole extended and injection layer's radiation recombination coefficient distribution has function y=x 2 cosx first quadrant curve distribution; the hole extended and injection layer's radiation recombination coefficient distribution has function y=x

[0021] Preferably, the quantum well is a periodic structure composed of well layer and barrier layer, the number of periods is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, the thickness is 10-150 angstrom meters, the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, the thickness is 10-200 angstrom meters.

[0022] Preferably, the lower cladding layer, the upper waveguide layer, the lower waveguide layer, the upper cladding layer are any one or any combination of any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

[0023] Preferably, the substrate comprises any one of sapphire, silicon, Ge, SiC, AIN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2composite substrate, Mo, TiW, CuW, Cu, sapphire / AIN composite substrate, diamond, graphene, sapphire / SiN x x x sapphire / SiO2 / SiN composite substrate, sapphire / SiN / SiO2 composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2and LiGaO2composite substrate.

[0024] Compared with the prior art, the gallium nitride-based semiconductor laser element with a hole expansion and injection layer provided by the embodiment of the present application has the beneficial effects that: the peak rate field interface steepness and the separation energy interface steepness of the interface between the hole expansion and injection layer and the quantum well and the upper cladding layer are regulated, the solubility of the doping element is improved, the Mg activation energy is reduced and the Mg ionization efficiency is improved, the hole concentration of the hole expansion and injection layer is improved, the resistance and voltage of the laser are reduced, the efficiency and transport efficiency of the hole injection quantum well are improved, the photoelectric conversion efficiency of the laser is improved, at the same time, the radiation recombination coefficient interface steepness and the density interface steepness of the interface between the hole expansion and injection layer and the quantum well and the upper cladding layer are regulated, the internal optical absorption loss is reduced, the potential barrier of the interface between the quantum well and the hole expansion and injection layer is improved, the electron overflow probability is reduced, thereby realizing the dual functions of improving the hole injection efficiency and blocking the electron overflow, reducing the threshold current of the laser, and improving the slope efficiency and the confinement factor of the laser. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 is a structure schematic diagram of a gallium nitride-based semiconductor laser element with a hole expansion and injection layer according to an embodiment of the present application;

[0026] Figure 2 is a SIMS secondary ion mass spectrum diagram of a gallium nitride-based semiconductor laser element with a hole expansion and injection layer according to an embodiment of the present application;

[0027] Figure 3 is a SIMS secondary ion mass spectrum diagram (partial enlarged view) of a gallium nitride-based semiconductor laser element with a hole expansion and injection layer according to an embodiment of the present application;

[0028] Figure 4 is a TEM lens electron microscope diagram of a gallium nitride-based semiconductor laser element with a hole expansion and injection layer according to an embodiment of the present application;

[0029] Figure 5 ​​It is a TEM lens electron microscope graph (partial enlarged view) of a gallium nitride-based semiconductor laser element with a hole expansion and injection layer according to an embodiment of the present application.

[0030] Figure 6 It is a TEM lens electron microscope graph (partial enlarged view) of a gallium nitride-based semiconductor laser element with a hole expansion and injection layer according to an embodiment of the present application.

[0031] The figure mark: 100: substrate; 101: lower cladding layer; 102: lower wave layer; 103: quantum well; 104: upper waveguide layer, 105: upper cladding layer, 106: hole expansion and injection layer. DETAILED DESCRIPTION

[0032] The technical solutions in the embodiments of the present application will be apparently and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the protection scope of the present application.

[0033] In order to solve the above problems, a gallium nitride-based semiconductor laser element with a hole expansion and injection layer according to an embodiment of the present application will be described and explained in detail below through the following specific embodiments.

[0034] Referring to Figures 1-6 The gallium nitride-based semiconductor laser element with a hole expansion and injection layer according to the present application comprises, from bottom to top, a substrate 100, a lower cladding layer 101, a lower wave layer 102, a quantum well 103, an upper waveguide layer 104, and an upper cladding layer 105, wherein the upper waveguide layer 104 and the upper cladding layer 105 have a hole expansion and injection layer 106 therebetween.

[0035] The falling angle of the peak position of the peak rate electric field of the hole expansion and injection layer 106 to the upper cladding layer 105 is α, the falling angle of the peak position of the peak rate electric field of the hole expansion and injection layer 106 to the quantum well 103 is β, and the falling angle of the peak position of the peak rate electric field of the upper cladding layer 105 to the quantum well 103 is γ, wherein 30°≤γ≤β≤α≤90°.

[0036] The rising angle of the valley position of the radiation recombination coefficient of the hole expansion and injection layer 106 to the upper cladding layer 105 is θ, the rising angle of the valley position of the radiation recombination coefficient of the hole expansion and injection layer 106 to the quantum well 103 is δ, and the rising angle of the valley position of the radiation recombination coefficient of the upper cladding layer 105 to the quantum well 103 is σ, wherein 25°≤σ≤δ≤θ≤90°.

[0037] The angle of decline of the peak position of the separation energy of the hole expansion and injection layer 106 in the direction of the upper cladding layer 105 is φ, the angle of decline of the peak position of the separation energy of the hole expansion and injection layer 106 in the direction of the quantum well 103 is ψ, and the angle of decline of the peak position of the separation energy of the upper cladding layer 105 in the direction of the quantum well 103 is μ, wherein: 10°≤μ≤ψ≤φ≤90°.

[0038] The angle of rise of the valley position of the density of the hole expansion and injection layer 106 in the direction of the upper cladding layer 105 is υ, the angle of rise of the valley position of the density of the hole expansion and injection layer 106 in the direction of the quantum well 103 is ρ, and the angle of rise of the valley position of the density of the upper cladding layer 105 in the direction of the quantum well 103 is ω, wherein: 20°≤ω≤ρ≤υ≤90°.

[0039] The angle of decline of the peak position of the separation energy of the peak rate electric field of the hole expansion and injection layer 106 in the direction of the upper cladding layer 105, the angle of rise of the valley position of the density of the radiative recombination coefficient of the hole expansion and injection layer 106 in the direction of the upper cladding layer 105 have the following relationship: 10°≤φ≤υ≤θ≤α≤90°.

[0040] The angle of decline of the peak position of the separation energy of the peak rate electric field of the hole expansion and injection layer 106 in the direction of the quantum well 103, the angle of rise of the valley position of the density of the radiative recombination coefficient of the hole expansion and injection layer 106 in the direction of the quantum well 103 have the following relationship: 10°≤ψ≤ρ≤δ≤β≤90°

[0041] The angle of decline of the peak position of the separation energy of the peak rate electric field of the upper cladding layer 105 in the direction of the quantum well 103, the angle of rise of the valley position of the density of the radiative recombination coefficient of the upper cladding layer 105 in the direction of the quantum well 103 have the following relationship: 10°≤μ≤ω≤σ≤γ≤90°.

[0042] The peak rate field of the hole expansion and injection layer 106, the falling angle of the peak position of the separation energy to the upper cladding layer 105 direction, the rising angle of the valley position of the radiative recombination coefficient and the density of the hole expansion and injection layer 106 to the upper cladding layer 105 direction, the falling angle of the peak position of the peak rate field of the hole expansion and injection layer 106 to the quantum well 103 direction, the rising angle of the valley position of the radiative recombination coefficient and the density of the hole expansion and injection layer 106 to the quantum well 103 direction, the falling angle of the peak position of the peak rate field of the upper cladding layer 105 to the quantum well 103 direction, and the rising angle of the valley position of the radiative recombination coefficient and the density of the upper cladding layer 105 to the quantum well 103 direction have the following relationship: 10°≤μ≤ψ≤φ≤ω≤ρ≤υ≤σ≤δ≤θ≤γ≤β≤α≤90°.

[0043] The peak rate field distribution of the hole expansion and injection layer 106 has a function y=sinx / x third quadrant curve distribution; the separation energy distribution of the hole expansion and injection layer 106 has a function y=x 2 sinx first quadrant curve distribution; the radiative recombination coefficient distribution of the hole expansion and injection layer 106 has a function y=x 2 cosx first four quadrant curve distribution; and the density distribution of the hole expansion and injection layer 106 has a function y=x / cosx second quadrant curve distribution.

[0044] The present application regulates the interface steepness of the radiative recombination coefficient and the interface steepness of the density of the hole expansion and injection layer 106 and the quantum well 103 and the upper cladding layer 105, reduces internal optical absorption loss, improves the potential barrier of the quantum well and the hole expansion and injection layer interface, reduces the probability of electron overflow, and then realizes the dual function of improving the hole injection efficiency and blocking the electron overflow, reduces the threshold current of the laser, and improves the slope efficiency and the limiting factor of the laser. The specific values are shown in the following table:

[0045] Ultraviolet laser - project Conventional laser Inventive laser Variation amplitude Slope efficiency (W / A) 1.02 1.98 94％ Limiting factor 1.40％ 3.14％ 124％ Internal optical loss (cm -1 ) 17.2 9.1 -47％ threshold current density (kA / cm 2 ) 3.6 1.06 -71％ Voltage (V) 8.5 4.7 -45％ Series resistance (Ω) 29 10.2 -65％ Optical power (W) 3.05 4.15 36％

[0046] In the present application, the hole expansion and injection layer 106 is any one or any combination of Al GaN, Al InGaN, Al N, GaN, Al InN, and InGaN.

[0047] In the application, the quantum well 103 is a periodic structure composed of well layers and barrier layers, the number of periods is 3 >= m >= 1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, the thickness is 10-150 angstrom meters, the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, the thickness is 10-200 angstrom meters.

[0048] In the application, the lower cladding layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper cladding layer 105 are any one or any combination of any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

[0049] In the application, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x, sapphire / SiO2 / Si N x composite substrate, sapphire / Si N x composite substrate, sapphire / Si N

[0050] The above only is the preferred embodiment of the present application, it should be pointed out that, for the ordinary skilled in the art, without departing from the technical principles of the present application, can also make a number of improvements and variations, these improvements and variations should also be considered as the protection scope of the present application.

Claims

1. A gallium nitride-based semiconductor laser element having a hole expansion and injection layer, comprising, in order from the bottom, a substrate (100), a lower cladding layer (101), a lower waveguide layer (102), a quantum well (103), an upper waveguide layer (104), and an upper cladding layer (105), characterized in that, The upper waveguide layer (104) and the upper cladding layer (105) have a hole expansion and injection layer (106) therebetween; The peak position of the peak rate electric field of the hole expansion and injection layer (106) drops towards the upper cladding layer (105) at an angle α, the peak position of the peak rate electric field of the hole expansion and injection layer (106) drops towards the quantum well (103) at an angle β, and the peak position of the peak rate electric field of the upper cladding layer (105) drops towards the quantum well (103) at an angle γ, wherein: 30°≤γ≤β≤α≤90°. The valley position of the recombination coefficient of the hole expansion and injection layer (106) rises towards the upper cladding layer (105) at an angle θ, the valley position of the recombination coefficient of the hole expansion and injection layer (106) rises towards the quantum well (103) at an angle δ, and the valley position of the recombination coefficient of the upper cladding layer (105) rises towards the quantum well (103) at an angle σ, wherein: 25°≤σ≤δ≤θ≤90°. The peak position of the separation energy of the hole expansion and injection layer (106) drops towards the upper cladding layer at an angle φ, the peak position of the separation energy of the hole expansion and injection layer (106) drops towards the quantum well (103) at an angle ψ, and the peak position of the separation energy of the upper cladding layer (105) drops towards the quantum well (103) at an angle μ, wherein: 10°≤μ≤ψ≤φ≤90°. The valley position of the density of the hole expansion and injection layer (106) rises towards the upper cladding layer (105) at an angle υ, the valley position of the density of the hole expansion and injection layer (106) rises towards the quantum well (103) at an angle ρ, and the valley position of the density of the upper cladding layer (105) rises towards the quantum well (103) at an angle ω, wherein: 20°≤ω≤ρ≤υ≤90°.

2. A gallium nitride based semiconductor laser device having a hole spreading and injecting layer according to claim 1, wherein The peak position of the peak rate electric field and the peak position of the separation energy of the hole expansion and injection layer (106) drop towards the upper cladding layer (105) at an angle, and the valley position of the recombination coefficient and the valley position of the density of the hole expansion and injection layer (106) rise towards the upper cladding layer (105) at an angle, which have the following relationship: 10°≤φ≤υ≤θ≤α≤90°.

3. A gallium nitride based semiconductor laser device having a hole spreading and injecting layer according to claim 1, wherein The peak position of the peak rate electric field and the peak position of the separation energy of the hole expansion and injection layer (106) drop towards the quantum well (103) at an angle, and the valley position of the recombination coefficient and the valley position of the density of the hole expansion and injection layer (106) rise towards the quantum well (103) at an angle, which have the following relationship: 10°≤ψ≤ρ≤δ≤β≤90°.

4. A GaN-based semiconductor laser device having a hole expansion and injection layer according to claim 1, wherein The peak position of the peak rate electric field and the peak position of the separation energy of the upper cladding layer (105) drop towards the quantum well (103) at an angle, and the valley position of the recombination coefficient and the valley position of the density of the upper cladding layer (105) rise towards the quantum well (103) at an angle, which have the following relationship: 10°≤μ≤ω≤σ≤γ≤90°.

5. A gallium nitride based semiconductor laser device having a hole spreading and injecting layer according to any one of claims 2 to 4, characterized in that, The peak rate field of the hole expansion and injection layer (106), the falling angle of the peak position of the separation energy to the upper cladding layer (105) direction, the radiation recombination coefficient of the hole expansion and injection layer (106), the rising angle of the valley position of the density to the upper cladding layer (105) direction, the peak rate field of the hole expansion and injection layer (106), the falling angle of the peak position of the separation energy to the quantum well (103) direction, the radiation recombination coefficient of the hole expansion and injection layer (106), the rising angle of the valley position of the density to the quantum well (103) direction, the peak rate field of the upper cladding layer (105), the falling angle of the peak position of the separation energy to the quantum well (103) direction, the radiation recombination coefficient of the upper cladding layer (105), the rising angle of the valley position of the density to the quantum well (103) direction have the following relationship: 10°≤μ≤ψ≤φ≤ω≤ρ≤υ≤σ≤δ≤θ≤γ≤β≤α≤90°.

6. A gallium nitride based semiconductor laser device having a hole spreading and injecting layer according to claim 1, wherein The hole expansion and injection layer (106) is any one or any combination of AlGaN, AlInGaN, AlN, GaN, AlInN, InGaN.

7. A gallium nitride based semiconductor laser device having a hole spreading and injecting layer according to claim 1, wherein The quantum well (103) is a periodic structure composed of well layers and barrier layers, the number of periods is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, and the thickness is 10-150 angstrom meters, the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, and the thickness is 10-200 angstrom meters.

8. A gallium nitride based semiconductor laser device having a hole spreading and injecting layer according to claim 1, wherein The lower cladding layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper cladding layer (105) are any one or any combination of any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

9. A gallium nitride based semiconductor laser device having a hole spreading and injecting layer according to claim 1, wherein The substrate (100) comprises sapphire, silicon, Ge, SiC, AIN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AIN composite substrate, diamond, graphene, sapphire / SiN x composite substrate, sapphire / SiO2 / SiN x composite substrate, sapphire / SiN x composite substrate, sapphire / SiO2 composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 / LiGaO2 composite substrate.

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