Supporting glass substrate and manufacturing method thereof

Abstract

The technical problem of the present invention is to contribute to increasing the density of a semiconductor package by providing a support glass substrate suitable for supporting a processing substrate for high-density wiring, and a method for manufacturing the support glass substrate. This support glass substrate is characterized in that when the temperature is raised from room temperature to 400 DEG C at a rate of 5 DEG C / min and maintained at 400 DEG C for 5 hours, and then the temperature is reduced to room temperature at a rate of 5 DEG C / min, the heat shrinkage rate is 20 ppm or less.

Description

[0001] The present application is a divisional application of PCT / JP2015 / 085638, application number: 201580053414.3, application date: 2015.12.21, invention name: "Supporting glass substrate and method for manufacturing the same". Technical Field

[0002] The present invention relates to a supporting glass substrate and a method for manufacturing the same, and more particularly to a supporting glass substrate for supporting a processing substrate in a manufacturing process of a semiconductor package and a method for manufacturing the same. Background Art

[0003] Portable electronic devices such as mobile phones, notebook computers, and PDAs (Personal Data Assistance) require miniaturization and lightness. Along with this, the installation space of semiconductor chips used in these electronic devices is also strictly limited, and high-density installation of semiconductor chips has become a problem. Therefore, in recent years, high-density installation of semiconductor packages has been sought through three-dimensional installation technology, that is, stacking semiconductor chips on each other and wiring connections between each semiconductor chip.

[0004] In addition, conventional wafer level packages (WLP) are manufactured by forming bumps on a wafer and then dicing the wafer into individual pieces. However, conventional WLPs have the following problems: not only is it difficult to increase the number of pins, but also because the semiconductor chip is mounted with the back side exposed, it is easy to cause a chip on the semiconductor chip.

[0005] Therefore, a fan-out type WLP has been proposed as a new WLP. The fan-out type WLP can increase the number of pins and prevent chipping of the semiconductor chip by protecting the end of the semiconductor chip.

[0006] In the fan-out type WLP, after a plurality of semiconductor chips are sealed with a resin sealing material to form a process substrate, there are steps of wiring on one surface of the process substrate and forming solder bumps.

[0007] Since these steps involve heat treatment at about 300° C., there is a concern that the sealing material may deform and cause the processed substrate to change in size. If the processed substrate changes in size, it is difficult to perform high-density wiring on one surface of the processed substrate and it is also difficult to accurately form solder bumps. Summary of the invention

[0008] Problems to be solved by the invention

[0009] In order to suppress the dimensional change of the processing substrate, it is effective to use a glass substrate as a supporting substrate. The glass substrate is easy to smooth the surface and has rigidity. Therefore, if a glass substrate is used, the processing substrate can be firmly and accurately supported. In addition, the glass substrate is not easy to transmit light such as ultraviolet light. Therefore, if a glass substrate is used, the processing substrate and the glass substrate can be easily fixed by providing an adhesive layer, etc. In addition, the processing substrate and the glass substrate can also be easily separated by providing a peeling layer, etc.

[0010] However, even when a supporting glass substrate is used, it is sometimes difficult to perform high-density wiring on one surface of the processing substrate.

[0011] The present invention has been made in view of the above circumstances, and a technical object thereof is to contribute to the high density of semiconductor packages by inventing a supporting glass substrate suitable for supporting a processing substrate for high-density wiring and a method for manufacturing the same.

[0012] Means for solving problems

[0013] The inventors of the present invention have repeatedly conducted various experiments, and as a result, found that the above-mentioned technical problems can be solved by focusing on the fact that the supporting glass substrate is sometimes slightly thermally deformed due to the heat treatment of about 300°C in the manufacturing process of the semiconductor package, and that this slight thermal deformation has an adverse effect on the wiring accuracy in the processed substrate, and reducing the thermal shrinkage of the supporting glass substrate to below a specified value. Thus, the present invention was proposed. That is, the supporting glass substrate of the present invention is characterized in that, after it is heated from room temperature to 400°C at a rate of 5°C / min, maintained at 400°C for 5 hours, and then cooled to room temperature at a rate of 5°C / min, its thermal shrinkage rate is less than 20 ppm. Here, the "thermal shrinkage rate" can be measured according to the following method. First, prepare a 160mm×30mm strip sample as a measurement sample ( Figure 1 (a)). The strip sample G3 was marked with #1000 water-resistant abrasive paper at a distance of 20 to 40 mm from the end in the long side direction, and was broken in a direction perpendicular to the mark to obtain test pieces G31 and G32 ( Figure 1 (b)). After only the broken test piece G31 is heat-treated under the prescribed conditions, the unheat-treated test piece G31 and the heat-treated test piece G32 are fixed side by side with tape T ( Figure 1 (c)) The positional deviation of the mark (ΔL1, ΔL2) was read using a laser microscope, and the thermal shrinkage was calculated using the following formula 1.

[0014]

Number 1

[0015] Thermal shrinkage [ppm] = (△L1 [μm] + △L2 [μm]) / 160 × 10 -3

[0016] It should be noted that, as described above, the heat treatment temperature in the manufacturing process of the semiconductor package is about 300° C., but it is difficult to evaluate the thermal shrinkage rate of the supporting glass substrate by heat treatment at 300° C. Therefore, in the present invention, the thermal shrinkage rate of the supporting glass substrate is evaluated under the heat treatment condition of 400° C. for 5 hours, and it is considered that the thermal shrinkage rate obtained in this evaluation is related to the tendency of thermal shrinkage of the supporting glass substrate in the manufacturing process of the semiconductor package.

[0017] Second, the warpage of the supporting glass substrate of the present invention is preferably 40 μm or less. Here, the "warpage" refers to the sum of the absolute value of the maximum distance between the highest point and the least squares focal plane in the entire supporting glass substrate and the absolute value of the lowest point and the least squares focal plane, which can be measured by, for example, SBW-331ML / d manufactured by KOBELCO Research Co., Ltd.

[0018] Third, the overall thickness deviation of the supporting glass substrate of the present invention is preferably less than 2.0 μm. If the overall thickness deviation is as small as less than 2.0 μm, it is easy to improve the accuracy of processing. In particular, the wiring accuracy can be improved, so high-density wiring can be performed. In addition, the in-plane strength of the supporting glass substrate is improved, making the supporting glass substrate and the laminate less likely to be damaged. Furthermore, the number of reuses (durability) of the supporting glass substrate can also be increased. Here, the "overall thickness deviation" is the difference between the maximum thickness and the minimum thickness of the entire supporting glass substrate, for example, it can be measured using SBW-331ML / d manufactured by KOBELCO Research Corporation.

[0019] Fourthly, the warping amount of the supporting glass substrate of the present invention is preferably less than 20 μm.

[0020] Fifthly, it is preferred that all or part of the surface of the supporting glass substrate of the present invention is a polished surface.

[0021] Sixthly, the supporting glass substrate of the present invention is preferably formed by an overflow down-draw method.

[0022] Seventh, the Young's modulus of the supporting glass substrate of the present invention is preferably 65 GPa or more. Here, "Young's modulus" refers to a value measured by a bending resonance method. It should be noted that 1 GPa is equivalent to about 101.9 Kgf / mm 2 .

[0023] Eighth, the outer shape of the supporting glass substrate of the present invention is preferably a wafer shape.

[0024] Ninth, the supporting glass substrate of the present invention is preferably used to support a processing substrate in a manufacturing process of a semiconductor package.

[0025] Tenth, the supporting glass substrate of the present invention is preferably a laminate comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate, and the supporting glass substrate is the above-mentioned supporting glass substrate.

[0026] Eleventh, the supporting glass substrate of the present invention is characterized by comprising: a step of cutting a glass original plate to obtain a supporting glass substrate; and a step of heating the obtained supporting glass substrate to a temperature higher than (annealing point of the supporting glass substrate).

[0027] Twelfth, the supporting glass substrate of the present invention is preferably heated in such a way that the thermal shrinkage rate reaches 20 ppm or less when the temperature is increased from room temperature to 400°C at a rate of 5°C / min, maintained at 400°C for 5 hours, and then cooled to room temperature at a rate of 5°C / min.

[0028] Thirteenth, the supporting glass substrate of the present invention is preferably heated so that the amount of warpage becomes 40 μm or less.

[0029] Fourteenth, the supporting glass substrate of the present invention is preferably formed into a glass original plate by an overflow down-draw method. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 This is an explanatory diagram for explaining the method of measuring the thermal shrinkage rate.

[0031] Figure 2 This is a schematic perspective view showing an example of the laminated body of the present invention.

[0032] Figure 3 Schematic cross-sectional views showing the manufacturing process of a fan-out type WLP.

[0033] Figure 4 This is a graph showing the heating conditions of the sample of [Example 1].

[0034] Figure 5 This is a graph showing the heating conditions of the sample of [Example 2]. DETAILED DESCRIPTION

[0035] The supporting glass substrate of the present invention, when heated from room temperature to 400°C at a rate of 5°C / min, maintained at 400°C for 5 hours, and then cooled to room temperature at a rate of 5°C / min, has a thermal shrinkage of less than 20 ppm, preferably less than 15 ppm, less than 12 ppm, less than 10 ppm, and especially less than 8 ppm. If the thermal shrinkage is large, the supporting glass substrate will undergo slight thermal deformation due to the heat treatment of about 300°C in the manufacturing process of the semiconductor package, and the accuracy of the processing is difficult to reduce. In particular, the wiring accuracy is reduced and high-density wiring is difficult to perform. Furthermore, it is difficult to increase the number of reuses (durability) of the supporting glass substrate. It should be noted that as a method of reducing the thermal shrinkage, the heating method described later, the method of increasing the strain point, etc. can be listed.

[0036] In the supporting glass substrate of the present invention, the warping amount is preferably less than 40 μm, less than 30 μm, less than 25 μm, 1 to 20 μm, and especially less than 5 to 20 μm. If the warping amount is large, the processing accuracy is difficult to reduce. In particular, the wiring accuracy is reduced and high-density wiring is difficult. Furthermore, it is difficult to increase the number of reuses (durability) of the supporting glass substrate.

[0037] The overall thickness deviation is preferably less than 2 μm, less than 1.5 μm, less than 1 μm, less than 1 μm, less than 0.8 μm, 0.1 to 0.9 μm, and especially 0.2 to 0.7 μm. If the overall thickness deviation is large, it is difficult to reduce the processing accuracy. In particular, the wiring accuracy is reduced and it is difficult to perform high-density wiring. It is also difficult to increase the number of reuses (durability) of the supporting glass substrate.

[0038] The arithmetic mean roughness Ra of the surface is preferably less than 10nm, less than 5nm, less than 2nm, less than 1nm, and especially less than 0.5nm. The smaller the arithmetic mean roughness Ra of the surface, the easier it is to improve the accuracy of processing. In particular, the wiring accuracy can be improved, so high-density wiring can be performed. In addition, the strength of the supporting glass substrate is improved, making the supporting glass substrate and the laminate less likely to break. Furthermore, the number of reuses (number of supports) of the supporting glass substrate can be increased. It should be noted that the "arithmetic mean roughness Ra" can be measured using an atomic force microscope (AFM).

[0039] The entire or a part of the surface of the supporting glass substrate of the present invention is preferably a polished surface, more preferably 50% or more of the surface is a polished surface, further preferably 70% or more of the surface is a polished surface, and particularly preferably 90% or more of the surface is a polished surface. In this way, the overall thickness deviation is easily reduced, and the warpage is also easily reduced.

[0040] As a method for grinding treatment, various methods can be used, but the following method is preferred: the two sides of the supporting glass substrate are clamped by a pair of grinding pads, and the supporting glass substrate and the pair of grinding pads are rotated together while the supporting glass substrate is ground. It is further preferred that the outer diameters of the pair of grinding pads are different, and it is preferred to perform the grinding treatment in a manner that a part of the supporting glass substrate intermittently protrudes from the grinding pad during grinding. Thus, it is easy to reduce the overall plate thickness deviation and the warping amount. It is explained that in the grinding treatment, the grinding depth is not particularly limited, and the grinding depth is preferably less than 50 μm, less than 30 μm, less than 20 μm, and especially less than 10 μm. The smaller the grinding depth, the more the productivity of the supporting glass substrate is improved.

[0041] The supporting glass substrate of the present invention is preferably in the shape of a wafer (roughly a true circle), and its diameter is preferably 100 mm or more and 500 mm or less, and particularly 150 mm or more and 450 mm or less. This makes it easy to apply to the manufacturing process of semiconductor packages. It can also be processed into other shapes, such as a rectangular shape, as required.

[0042] In the supporting glass substrate of the present invention, the thickness is preferably less than 2.0 mm, less than 1.5 mm, less than 1.2 mm, less than 1.1 mm, less than 1.0 mm, and especially less than 0.9 mm. The thinner the thickness, the lighter the mass of the laminate, and thus the more improved the handling. On the other hand, if the thickness is too thin, the strength of the supporting glass substrate itself is reduced and it is difficult to function as a supporting substrate. Therefore, the thickness is preferably more than 0.1 mm, more than 0.2 mm, more than 0.3 mm, more than 0.4 mm, more than 0.5 mm, more than 0.6 mm, and especially more than 0.7 mm.

[0043] The supporting glass substrate of the present invention preferably has the following properties.

[0044] The average thermal expansion coefficient of the supporting glass substrate of the present invention in the temperature range of 30 to 380° C. is preferably 0×10 －7 / ℃ and above 165×10 －7 / °C or less. This makes it easy to match the thermal expansion coefficients of the processing substrate and the supporting glass substrate. Moreover, if the thermal expansion coefficients of the two are matched, it is easy to suppress the dimensional change (especially warping deformation) of the processing substrate during processing. As a result, one surface of the processing substrate can be wired at a high density, and solder bumps can also be accurately formed. It should be noted that the "average thermal expansion coefficient in the temperature range of 30 to 380°C" can be measured using a thermal expansion meter.

[0045] When the proportion of semiconductor chips in the processing substrate is small and the proportion of sealing materials is large, it is preferred to increase the average thermal expansion coefficient in the temperature range of 30 to 380°C. Conversely, when the proportion of semiconductor chips in the processing substrate is large and the proportion of sealing materials is small, it is preferred to lower the average thermal expansion coefficient in the temperature range of 30 to 380°C.

[0046] When the average thermal expansion coefficient in the temperature range of 30 to 380°C is 0×10 －7 / ℃ or more but less than 50×10 －7 When the supporting glass substrate is 200°C, it is preferred that the supporting glass substrate contains SiO2 55-75%, Al2O3 15-30%, Li2O 0.1-6%, Na2O+K2O 0-8%, MgO+CaO+SrO+BaO 0-10% as the glass composition, or it is also preferred that the supporting glass substrate contains SiO2 55-75%, Al2O3 10-30%, Li2O+Na2O+K2O 0-0.3%, MgO+CaO+SrO+BaO 5-20% as the glass composition. When the average thermal expansion coefficient in the temperature range of 30-380°C is 50×10 －7 / ℃ or more but less than 75×10 －7 When the supporting glass substrate is 200°C and the temperature is 400°C, the supporting glass substrate preferably contains SiO2 55-70%, Al2O3 3-15%, B2O3 5-20%, MgO 0-5%, CaO 0-10%, SrO 0-5%, BaO 0-5%, ZnO 0-5%, Na2O 5-15%, and K2O 0-10% as the glass composition. When the average thermal expansion coefficient in the temperature range of 30-380°C is 75×10 －7 / ℃ and above 85×10 －7 / °C or less, the supporting glass substrate preferably contains SiO2 60-75%, Al2O3 5-15%, B2O3 5-20%, MgO 0-5%, CaO 0-10%, SrO 0-5%, BaO 0-5%, ZnO 0-5%, Na2O 7-16%, K2O 0-8% as the glass composition in terms of mass%. When the average thermal expansion coefficient in the temperature range of 30-380°C is more than 85×10 －7 / ℃ and 120×10 －7 / °C or less, the supporting glass substrate preferably contains SiO2 55-70%, Al2O3 3-13%, B2O3 2-8%, MgO 0-5%, CaO 0-10%, SrO 0-5%, BaO 0-5%, ZnO 0-5%, Na2O 10-21%, and K2O 0-5% as the glass composition in terms of mass%. When the average thermal expansion coefficient in the temperature range of 30-380°C is more than 120×10 －7 / ℃ and 165×10 －7 When the glass composition is less than 1000 g / cm2, the supporting glass substrate preferably contains SiO2 53-65%, Al2O3 3-13%, B2O3 0-5%, MgO0.1-6%, CaO 0-10%, SrO 0-5%, BaO 0-5%, ZnO 0-5%, Na2O+K2O 20-40%, Na2O 12-21%, and K2O 7-21% as the glass composition in terms of mass%. In this way, the thermal expansion coefficient can be easily limited to the required range, and the devitrification resistance is improved, so it is easy to form a supporting glass substrate with a small overall thickness deviation.

[0047] The strain point is preferably 480° C. or higher, 500° C. or higher, 510° C. or higher, 520° C. or higher, and particularly preferably 530° C. or higher. The higher the strain point, the easier it is to reduce the thermal shrinkage. The “strain point” refers to a value measured by a method based on ASTM C336.

[0048] The Young's modulus is preferably 65 GPa or more, 67 GPa or more, 68 GPa or more, 69 GPa or more, 70 GPa or more, 71 GPa or more, 72 GPa or more, and particularly 73 GPa or more. If the Young's modulus is too low, it is difficult to maintain the rigidity of the laminate, and deformation, warping, and breakage of the processed substrate are likely to occur.

[0049] The liquidus temperature is preferably less than 1150°C, less than 1120°C, less than 1100°C, less than 1080°C, less than 1050°C, less than 1010°C, less than 980°C, less than 960°C, less than 950°C, and especially less than 940°C. In this way, it is easy to form the supporting glass substrate by the down-draw method, especially the overflow down-draw method, so it is easy to make a supporting glass substrate with a small thickness, and the thickness deviation after forming can be reduced. Furthermore, it is easy to prevent the productivity of the supporting glass substrate from being reduced due to the generation of devitrified crystals during the manufacturing process of the supporting glass substrate. Here, the "liquidus temperature" can be calculated as follows: After putting a glass powder that can pass through a standard sieve of 30 mesh (500μm) and remains on a sieve of 50 mesh (300μm), it is placed in a platinum boat, kept in a temperature gradient furnace for 24 hours, and the temperature of the precipitated crystal is measured to calculate.

[0050] The viscosity at liquidus temperature is preferably 10 4.6 dPa·s or more, 10 5.0 dPa·s or more, 10 5.2 dPa·s or more, 10 5.4 dPa·s or more, 10 5.6 dPa·s or more, especially 10 5.8 dPa·s or more. In this way, it is easy to form the supporting glass substrate by the down-draw method, especially the overflow down-draw method, so it is easy to produce a supporting glass substrate with a small thickness, and the thickness deviation after forming can be reduced. Furthermore, it is easy to prevent the productivity of the supporting glass substrate from being reduced due to the generation of devitrified crystals during the manufacturing process of the supporting glass substrate. Here, the "viscosity at the liquidus temperature" can be measured by the platinum ball pulling method. It should be noted that the viscosity at the liquidus temperature is an indicator of formability, and the higher the viscosity at the liquidus temperature, the higher the formability.

[0051] In 10 2.5 dPa·s, the temperature is preferably 1580°C or less, 1500°C or less, 1450°C or less, 1400°C or less, 1350°C or less, and particularly 1200 to 1300°C. 2.5 dPa·s, the melting property decreases and the manufacturing cost of the supporting glass substrate increases. 2.5 dPa·s” can be measured by the platinum ball pulling method. 2.5 The temperature at dPa·s corresponds to the melting temperature, and the lower the temperature is, the higher the meltability is.

[0052] The supporting glass substrate of the present invention is preferably formed by a downdraw method, especially an overflow downdraw method. The overflow downdraw method is a method of forming a glass original plate by overflowing molten glass from both sides of a heat-resistant trough-shaped structure, converging the overflowed molten glass at the lower top of the trough-shaped structure, and stretching and forming downward. In the overflow downdraw method, the surface that should become the surface of the supporting glass substrate does not contact the trough-shaped refractory material, and is formed in a state of a free surface. Therefore, it is easy to make a supporting glass substrate with a small plate thickness, and the overall plate thickness deviation can be reduced, resulting in the manufacturing cost of the supporting glass substrate being low.

[0053] As a forming method of the glass raw plate, in addition to the overflow down-draw method, for example, a flow hole down-draw method, a re-down-draw method, a float method, a flattening method, etc. can be adopted.

[0054] The supporting glass substrate of the present invention preferably has a polished surface on the surface and is formed by an overflow down-draw method. In this way, the overall plate thickness deviation before the polishing process becomes smaller, so the overall plate thickness deviation can be reduced as much as possible by the polishing process. For example, the overall plate thickness deviation can be reduced to less than 1.0 μm.

[0055] From the viewpoint of reducing the amount of warpage, the supporting glass substrate of the present invention is preferably not subjected to chemical strengthening treatment. On the other hand, from the viewpoint of mechanical strength, it is preferably subjected to chemical strengthening treatment. That is, from the viewpoint of reducing the amount of warpage, it is preferred that there is no compressive stress layer on the surface, and from the viewpoint of mechanical strength, it is preferred that there is a compressive stress layer on the surface.

[0056] The manufacturing method of the supporting glass substrate of the present invention is characterized by comprising: a step of cutting a glass original plate to obtain a supporting glass substrate; and a step of heating the obtained supporting glass substrate to a temperature above (annealing point of the supporting glass substrate). Here, the technical features (preferred embodiments, effects) of the manufacturing method of the supporting glass substrate of the present invention overlap with the technical features of the supporting glass substrate of the present invention. Therefore, detailed description of the overlapping parts is omitted in this specification.

[0057] The method for manufacturing a supporting glass substrate of the present invention includes a step of cutting a glass original plate to obtain a supporting glass substrate. Various methods can be selected as methods for cutting the glass original plate. For example, the following methods can be used: a method of cutting by thermal shock during laser irradiation, a method of breaking after scribing.

[0058] The method for producing a supporting glass substrate of the present invention includes a step of heating the supporting glass substrate to a temperature higher than (the annealing point of the supporting glass substrate). Such a heating step can be performed using a known electric furnace, gas furnace, or the like.

[0059] The heating temperature is preferably heated at a temperature above the annealing point, more preferably at a temperature above (annealing point + 30°C), and further preferably at a temperature above (annealing point + 50°C). If the heating temperature is low, it is difficult to reduce the thermal shrinkage of the supporting glass substrate. On the other hand, the heating temperature is preferably heated at a temperature below the softening point, more preferably at a temperature below (softening point - 50°C), and further preferably at a temperature below (softening point - 80°C). If the heating temperature is too high, the dimensional accuracy of the supporting glass substrate is easily reduced.

[0060] The manufacturing method of the supporting glass substrate of the present invention is preferably heated in a manner such that the warpage amount is less than 40 μm. In addition, it is preferred that the supporting glass substrate is heated while being clamped by a heat-resistant substrate. This can reduce the warpage amount of the supporting glass substrate. It is to be noted that as a heat-resistant substrate, a mullite substrate, an alumina substrate, etc. can be used. In addition, if the supporting glass substrate is heated at a temperature above the annealing point, the warpage amount and the thermal shrinkage amount of the supporting glass substrate can also be reduced at the same time.

[0061] In addition, it is also preferable to heat the plurality of supporting glass substrates in a stacked state, so that the warping amount of the supporting glass substrate stacked below can be appropriately reduced by utilizing the mass of the supporting glass substrate stacked above.

[0062] The method for producing a supporting glass substrate of the present invention preferably further comprises a step of polishing the surface of the supporting glass substrate so that the overall thickness deviation of the supporting glass substrate is less than 2.0 μm. A preferred embodiment of this step is as described above.

[0063] The laminate of the present invention is characterized in that it is a laminate having at least a processing substrate and a supporting glass substrate for supporting the processing substrate, wherein the supporting glass substrate is the above-mentioned supporting glass substrate. Here, the technical features (preferred embodiments, effects) of the laminate of the present invention overlap with the technical features of the supporting glass substrate of the present invention. Therefore, detailed description of the overlapping parts is omitted in this specification.

[0064] The laminate of the present invention preferably has an adhesive layer between the processing substrate and the supporting glass substrate. The adhesive layer is preferably a resin, preferably a thermosetting resin, a light-curing resin (especially an ultraviolet curing resin), etc. In addition, it is preferably a resin with heat resistance to withstand the heat treatment in the manufacturing process of the semiconductor package. As a result, the adhesive layer is not easily melted in the manufacturing process of the semiconductor package, and the accuracy of the processing can be improved.

[0065] The laminate of the present invention preferably further has a peeling layer between the processing substrate and the supporting glass substrate, more specifically, between the processing substrate and the adhesive layer, or between the supporting glass substrate and the adhesive layer. In this way, after the processing substrate is subjected to a predetermined processing, it is easy to peel the processing substrate from the supporting glass substrate. From the viewpoint of productivity, the peeling of the processing substrate is preferably performed by laser irradiation or the like.

[0066] The peeling layer is made of a material that causes "intra-layer peeling" or "interfacial peeling" by laser irradiation or the like. That is, it is made of a material that, when irradiated with light of a certain intensity, the bonding force between atoms or molecules in the atoms or molecules disappears or weakens, causing ablation or the like, thereby peeling off. In addition, there are cases where the components contained in the peeling layer are converted into gas by irradiation with irradiation light and are released to separate, and there are cases where the peeling layer absorbs light and becomes gas, and the vapor is released to separate.

[0067] In the laminate of the present invention, the supporting glass substrate is preferably larger than the processing substrate. Thus, when the processing substrate and the supporting glass substrate are slightly offset from each other, the edge of the processing substrate is unlikely to protrude from the supporting glass substrate.

[0068] The method for manufacturing a semiconductor package of the present invention is characterized in that it includes the steps of preparing a laminated body having at least a processing substrate and a supporting glass substrate for supporting the processing substrate and the step of processing the processing substrate, and the supporting glass substrate is the above-mentioned supporting glass substrate. Here, the technical features (preferred embodiments, effects) of the method for manufacturing a semiconductor package of the present invention overlap with the technical features of the supporting glass substrate and the laminated body of the present invention. Therefore, detailed description of the overlapping parts is omitted in this specification.

[0069] The method for manufacturing a semiconductor package of the present invention includes the step of preparing a laminated body including at least a processing substrate and a supporting glass substrate for supporting the processing substrate. The laminated body including at least a processing substrate and a supporting glass substrate for supporting the processing substrate has the above-mentioned material composition.

[0070] The method for manufacturing a semiconductor package of the present invention preferably further comprises a step of conveying the stacked body. Thus, the processing efficiency of the processing can be improved. It should be noted that the "step of conveying the stacked body" and the "step of processing the processing substrate" do not have to be performed separately, but can also be performed simultaneously.

[0071] In the method for manufacturing a semiconductor package of the present invention, the processing is preferably a processing for wiring one surface of a processing substrate, or a processing for forming a solder bump on one surface of a processing substrate. In the method for manufacturing a semiconductor package of the present invention, the supporting glass substrate and the processing substrate are not prone to dimensional changes during these processings, so these steps can be performed correctly.

[0072] As processing, in addition to the above, it can also be any of mechanical grinding of one surface of the processing substrate (usually the surface on the opposite side of the supporting glass substrate), dry etching of one surface of the processing substrate (usually the surface on the opposite side of the supporting glass substrate), and wet etching of one surface of the processing substrate (usually the surface on the opposite side of the supporting glass substrate). It should be noted that in the manufacturing method of the semiconductor package of the present invention, the supporting glass substrate and the processing substrate are not easily thermally deformed or warped and the rigidity of the stack can be maintained. As a result, the above processing can be performed correctly.

[0073] The semiconductor package of the present invention is characterized in that it is manufactured by the manufacturing method of the semiconductor package described above. Here, the technical features (preferred embodiments, effects) of the semiconductor package of the present invention overlap with the technical features of the supporting glass substrate, the laminate, and the manufacturing method of the semiconductor package of the present invention. Therefore, detailed description of the overlapping parts is omitted in this specification.

[0074] The electronic device of the present invention is characterized in that it is an electronic device having a semiconductor package, wherein the semiconductor package is the above-mentioned semiconductor package. Here, the technical features (preferred embodiments, effects) of the electronic device of the present invention overlap with the technical features of the supporting glass substrate, the laminate, the method for manufacturing the semiconductor package, and the semiconductor package of the present invention. Therefore, detailed description of the overlapping parts is omitted in this specification.

[0075] The present invention will be further described with reference to the accompanying drawings.

[0076] Figure 2 This is a schematic perspective view showing an example of the laminated body 1 of the present invention. Figure 3 In the embodiment, the laminate 1 includes a supporting glass substrate 10 and a processing substrate 11. In order to prevent the dimensional change of the processing substrate 11, the supporting glass substrate 10 is bonded to the processing substrate 11. A peeling layer 12 and an adhesive layer 13 are arranged between the supporting glass substrate 10 and the processing substrate 11. The peeling layer 12 is in contact with the supporting glass substrate 10, and the adhesive layer 13 is in contact with the processing substrate 11.

[0077] Depend on Figure 2 It can be seen that the laminate 1 is stacked in the order of the supporting glass substrate 10, the peeling layer 12, the adhesive layer 13, and the processing substrate 11. The shape of the supporting glass substrate 10 is determined by the processing substrate 11. Figure 3 In the figure, the supporting glass substrate 10 and the processing substrate 11 are both in the shape of a wafer. The peeling layer 12 uses silicon oxide, silicic acid compounds, silicon nitride, aluminum nitride, titanium nitride, etc. in addition to amorphous silicon (a-Si). The peeling layer 12 is formed by spin coating based on plasma CVD, sol-gel method, etc. The adhesive layer 13 is composed of resin and is formed by coating, for example, by various printing methods, inkjet methods, spin coating methods, roller coating methods, etc. After the supporting glass substrate 10 is peeled off from the processing substrate 11 through the peeling layer 12, the adhesive layer 13 is dissolved and removed by a solvent or the like.

[0078] Figure 3 It is a schematic cross-sectional view showing the manufacturing process of the fan-out type WLP. Figure 3 (a) shows a state where an adhesive layer 21 is formed on one surface of a support member 20. A peeling layer may be formed between the support member 20 and the adhesive layer 21 as required. Figure 3 As shown in (b), a plurality of semiconductor chips 22 are attached to the adhesive layer 21. At this time, the effective side of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Figure 3 As shown in (c), the semiconductor chip 22 is sealed with a resin sealant 23. The sealant 23 is made of a material that has little dimensional change after compression molding and dimensional change during wiring molding. Figure 3As shown in (d) and (e), after the processing substrate 24 sealed with the semiconductor chip 22 is separated from the supporting member 20, it is bonded and fixed to the supporting glass substrate 26 via the adhesive layer 25. At this time, in the surface of the processing substrate 24, the surface on the side opposite to the surface on the side where the semiconductor chip 22 is embedded is arranged on the side of the supporting glass substrate 26. In this way, a laminated body 27 can be obtained. It is to be noted that a peeling layer can be formed between the adhesive layer 25 and the supporting glass substrate 26 as needed. Furthermore, after the obtained laminated body 27 is transported, as shown in Figure 3 As shown in (f), after forming wiring 28 on the surface of the processing substrate 24 on the side where the semiconductor chip 22 is embedded, a plurality of solder bumps 29 are formed. Finally, after the processing substrate 24 is separated by the supporting glass substrate 26, the processing substrate 24 is cut into individual semiconductor chips 22 for subsequent packaging steps.

[0079] [Example 1]

[0080] Hereinafter, the present invention will be described based on examples. It should be noted that the following examples are merely illustrative and the present invention is not limited to the following examples in any way.

[0081] After preparing the glass raw materials so that the glass composition is calculated by mass %, namely SiO2 68.9%, Al2O3 5%, B2O38.2%, Na2O 13.5%, CaO3.6%, ZnO 0.7% and SnO2 0.1%, the raw materials are put into a glass melting furnace to be melted at 1500-1600°C. Then, the molten glass is supplied to an overflow down-draw forming device to be formed into a plate with a thickness of 1.2 mm.

[0082] Next, the obtained glass original plate was cut into a predetermined size (30 mm × 160 mm) to obtain a supporting glass substrate. Three supporting glass substrates were stacked, and the upper and lower sides of the stacked substrate were sandwiched by mullite substrates. Figure 4 The heating conditions are described in the description. Figure 4 In the above process, the maximum heating temperature is set to a temperature 50° C. higher than the annealing point of the supporting glass substrate.

[0083] Next, the surface of the supporting glass substrate is ground with a grinding device, thereby reducing the overall thickness deviation of the supporting glass substrate. Specifically, the two surfaces of the supporting glass substrate are clamped by a pair of grinding pads with different outer diameters, and the supporting glass substrate and the pair of grinding pads are rotated together while the two surfaces of the supporting glass substrate are ground. During the grinding process, the control is performed in such a way that a part of the supporting glass substrate occasionally protrudes from the grinding pad. It should be noted that the grinding pad is made of polyurethane, the average particle size of the grinding slurry used during the grinding process is 2.5μm, and the grinding speed is 15m / minute.

[0084] Finally, the supporting glass substrate after the heat treatment was heated from room temperature to 400°C at a rate of 5°C / min and maintained at 400°C for 5 hours, and then cooled to room temperature at a rate of 5°C / min. The thermal shrinkage at this time was evaluated using the formula 1. As a comparison object, the thermal shrinkage of the supporting glass substrate that was not heated was also evaluated. The results are as follows: the thermal shrinkage of the supporting glass substrate that was heated was 7ppm, while the thermal shrinkage of the supporting glass substrate that was not heated was 58ppm.

[0085] [Example 2]

[0086] After preparing the glass raw materials so that the glass composition is calculated by mass %, namely SiO2 60%, Al2O3 16.5%, B2O3 10%, MgO 0.3%, CaO 8%, SrO 4.5%, BaO 0.5% and SnO2 0.2%, the raw materials are put into a glass melting furnace to be melted at 1550-1650°C. Then, the molten glass is supplied to an overflow down-draw forming device to be formed into a plate with a thickness of 0.7 mm.

[0087] Next, the obtained glass plate is cut into a predetermined size. Then, three supporting glass substrates are stacked, and the upper and lower sides of the stacked substrates are clamped by mullite substrates. Figure 5 The heating conditions are described in the description. Figure 5 In the above process, the maximum heating temperature is set to a temperature 50° C. higher than the annealing point of the supporting glass substrate.

[0088] Next, the surface of the supporting glass substrate is ground with a grinding device, thereby reducing the overall thickness deviation of the supporting glass substrate. Specifically, the two surfaces of the supporting glass substrate are clamped by a pair of grinding pads with different outer diameters, and the supporting glass substrate and the pair of grinding pads are rotated together while the two surfaces of the supporting glass substrate are ground. During the grinding process, the control is performed in such a way that a part of the supporting glass substrate occasionally protrudes from the grinding pad. It should be noted that the grinding pad is made of polyurethane, the average particle size of the grinding slurry used during the grinding process is 2.5μm, and the grinding speed is 15m / minute.

[0089] The warpage of the supporting glass substrates (12 samples each) before and after the polishing treatment was measured using SBW-331ML / d manufactured by KOBELCO Research Co., Ltd. The results are shown in Table 1. In the measurement, the measurement pitch was set to 1 mm, the measurement distance was set to 294 mm, and the measurement lines were set to 4 lines (every 45°).

[0090] [Table 1]

[0091]

[0092] As shown in Table 1, the warpage of the heat-treated sample was 21 μm or less, while the warpage of the non-heat-treated sample was 116 μm or more. Although the thermal shrinkage of the heat-treated sample was not measured, it is estimated to be a sufficiently low value.

[0093] [Example 3]

[0094] First, glass raw materials were prepared so as to obtain the glass compositions of Samples No. 1 to 7 as shown in Table 2, and then put into a glass melting furnace to melt at 1500 to 1600° C. Then, the molten glass was supplied to an overflow down-draw forming device and formed into sheets with a thickness of 0.8 mm. Then, the original glass sheets were cut into the specified sizes under the same conditions as in Example 2. The glass substrates were then slowly cooled at a temperature of (annealing point + 60°C). The average thermal expansion coefficient α in the temperature range of 30 to 380°C was evaluated for each of the obtained supporting glass substrates. 30 ~ 380 , density ρ, strain point Ps, annealing point Ta, softening point Ts, high temperature viscosity 10 4.0 dPa·s at temperature, high temperature viscosity 10 3.0 dPa·s at temperature, high temperature viscosity 10 2.5 dPa·s at temperature, high temperature viscosity 10 2.0 dPa·s, liquidus temperature TL and Young's modulus E. After slicing, each supporting glass substrate before heat treatment was measured for overall thickness deviation and warpage using SBW-331ML / d manufactured by KOBELCO Research. The overall thickness deviation was 3 μm and the warpage was 70 μm.

[0095] [Table 2]

[0096]

[0097] The average thermal expansion coefficient α in the temperature range of 30 to 380°C 30 ~ 380 This is a value measured using a thermal expansion instrument.

[0098] The density ρ is a value measured by the known Archimedean method.

[0099] The strain point Ps, annealing point Ta, and softening point Ts are values ​​measured according to the method of ASTM C336.

[0100] High temperature viscosity 10 4.0 dPa·s, 103.0 dPa·s, 10 2.5 The temperature in dPa·s is a value measured by a platinum ball pulling method.

[0101] The liquidus temperature TL is a value obtained by placing a glass powder that passes through a 30-mesh (500 μm) standard sieve and remains on a 50-mesh (300 μm) sieve in a platinum boat, keeping the glass powder in a temperature gradient furnace for 24 hours, and then observing the glass powder under a microscope to determine the temperature at which crystals precipitate.

[0102] Young's modulus E refers to a value measured by a resonance method.

[0103] Next, the surface of the supporting glass substrate was polished using a polishing device. Specifically, the two surfaces of the supporting glass substrate were clamped by a pair of polishing pads with different outer diameters, and the two surfaces of the supporting glass substrate were polished while the supporting glass substrate and the pair of polishing pads were rotated together. During the polishing process, the control was performed in such a way that a part of the supporting glass substrate occasionally protruded from the polishing pad. It should be noted that the polishing pad was made of polyurethane, the average particle size of the polishing slurry used during the polishing process was 2.5μm, and the polishing speed was 15m / min. For each glass substrate obtained after the polishing process, the overall plate thickness deviation and the warpage were measured using SBW-331ML / d manufactured by KOBELCO Research Co., Ltd. The result was that the overall plate thickness deviation was 0.45μm and the warpage was 10 to 18μm. In addition, after heating from room temperature to 400°C at a rate of 5°C / min and maintaining at 400°C for 5 hours, the thermal shrinkage of each sample when cooled to room temperature at a rate of 5°C / min was 5 to 8ppm.

[0104] Explanation of symbols

[0105] 10, 27 Laminated body

[0106] 11, 26 Supporting glass substrate

[0107] 12, 24 processing substrate

[0108] 13 Peeling layer

[0109] 14, 21, 25 adhesive layer

[0110] 20 Supporting member

[0111] 22 Semiconductor Chip

[0112] 23 Sealing material

[0113] 28 Wiring

[0114] 29 Solder Bumps

Claims

1. A supporting glass substrate, characterized in that When the temperature is raised from room temperature to 400°C at a rate of 5°C / min and maintained at 400°C for 5 hours, and then lowered to room temperature at a rate of 5°C / min, the thermal shrinkage is less than 20 ppm.

2. The supporting glass substrate according to claim 1, wherein The warpage amount is 40 μm or less.

3. The supporting glass substrate according to claim 1 or 2, wherein: The overall plate thickness deviation is less than 2.0μm.

4. The supporting glass substrate according to any one of claims 1 to 3, wherein The amount of warping was less than 20 μm.

5. The supporting glass substrate according to any one of claims 1 to 4, wherein The entire or a part of the surface is a ground surface.

6. The supporting glass substrate according to any one of claims 1 to 5, wherein It is formed by overflow down-draw method.

7. The supporting glass substrate according to any one of claims 1 to 6, wherein The Young's modulus thereof is 65 GPa or more.

8. The supporting glass substrate according to any one of claims 1 to 7, wherein Its appearance is wafer-shaped.

9. The supporting glass substrate according to any one of claims 1 to 8, wherein It is used to support a processing substrate during the manufacturing process of a semiconductor package.

10. A laminated body, characterized in that: The laminate includes at least a processing substrate and a supporting glass substrate for supporting the processing substrate, wherein the supporting glass substrate is the supporting glass substrate according to any one of claims 1 to 9.

11. A method for manufacturing a supporting glass substrate, characterized in that: include: A step of cutting the original glass plate to obtain a supporting glass substrate; and A step of heating the obtained supporting glass substrate to a temperature not lower than (annealing point of the supporting glass substrate).

12. The method for manufacturing a supporting glass substrate according to claim 11, wherein: The heating is performed such that the thermal shrinkage rate becomes 20 ppm or less when the temperature is increased from room temperature to 400°C at a rate of 5°C / min, maintained at 400°C for 5 hours, and then decreased to room temperature at a rate of 5°C / min.

13. The method for manufacturing a supporting glass substrate according to claim 11 or 12, wherein: The heating is performed so that the warpage amount becomes 40 μm or less.

14. The method for producing a supporting glass substrate according to any one of claims 11 to 13, wherein: It uses the overflow down-draw method to form the glass raw plate.

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