Sensor device and semiconductor processing apparatus using the same

Abstract

A sensor device includes: a first substrate; a second substrate on the first substrate; a plurality of detection units between the first substrate and the second substrate and configured to collect detection information from plasma formed in a space above the second substrate; a controller configured to generate characteristic data representing a characteristic of the plasma based on the detection information collected by the plurality of detection units; and a power supply unit including a radio frequency (RF) energy harvester configured to generate power for operation of at least one of the plurality of detection units and the controller from RF power for forming the plasma.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of and priority to Korean Patent Application No. 10-2023-0074414 filed on June 9, 2023, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. background

[0004] The inventive concept relates to a sensor device and a semiconductor processing apparatus using the sensor device.

[0005] In a semiconductor processing apparatus that performs semiconductor processing using plasma, it may be necessary to accurately control the uniformity of plasma formed on a processing target such as a wafer to improve yield. Various attempts have been made to improve the uniformity of plasma, and methods for improving semiconductor processing efficiency by immediately measuring the uniformity of plasma have been proposed. When observing the plasma through a view port of the semiconductor processing apparatus, control variables of the semiconductor processing apparatus may be adjusted. However, observing the plasma through the view port may make it difficult to accurately determine the uniformity of the plasma, and therefore, the uniformity of the plasma may not be accurately controlled during actual semiconductor processing. Summary of the invention

[0006] An aspect of the present inventive concept is to provide a sensor device and a semiconductor processing apparatus using the same, which can minimize problems caused by an internal battery by including an RF energy harvester in the sensor device introduced into the semiconductor processing apparatus and used to analyze plasma characteristics, and generating power using RF energy for forming plasma.

[0007] According to one aspect of the inventive concept, a sensor device may include: a first substrate; a second substrate on the first substrate; a plurality of detection units between the first substrate and the second substrate and configured to collect detection information from plasma formed in a space above the second substrate; a controller configured to generate characteristic data representing characteristics of the plasma based on the detection information collected by the plurality of detection units; and a power supply unit including a radio frequency (RF) energy harvester configured to generate power for operation of at least one of the plurality of detection units and the controller from RF power used to form the plasma.

[0008] According to another aspect of the inventive concept, a sensor device may include: a first substrate; a second substrate on the first substrate; a coil pattern between the first substrate and the second substrate, wherein the coil pattern is configured to convert radio frequency (RF) power for forming plasma on the second substrate into AC voltage; a voltage generating circuit connected to the coil pattern and configured to convert the AC voltage into DC voltage; and a controller configured to receive the DC voltage output from the voltage generating circuit and generate characteristic data representing characteristics of the plasma.

[0009] According to another aspect of the inventive concept, a semiconductor processing apparatus may include: a chamber; a first bias electrode and a second bias electrode in a space inside the chamber; an electrostatic chuck above the first bias electrode; and a control device configured to control the first bias electrode, the second bias electrode, and the electrostatic chuck, wherein the control device is configured to provide radio frequency (RF) power to each of the first bias electrode and the second bias electrode to form plasma in the space inside the chamber, wherein the control device is configured to control the first bias electrode, the second bias electrode, and the electrostatic chuck using characteristic data generated by a sensor device on the electrostatic chuck, wherein the characteristic data represents characteristics of the plasma, and wherein the sensor device includes an RF energy harvester configured to generate power from the RF power used to form the plasma. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The above and other aspects, features and advantages of the present inventive concept will be more clearly understood from the following detailed description in conjunction with the accompanying drawings, in which:

[0011] Figure 1 is a schematic diagram illustrating a semiconductor processing system according to an embodiment of the inventive concept;

[0012] Figure 2 is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the inventive concept;

[0013] Figures 3 to 5 is a diagram schematically illustrating a sensor device according to an embodiment of the inventive concept;

[0014] Figure 6 is a diagram schematically illustrating an RF energy harvester included in a sensor device according to an embodiment of the inventive concept;

[0015] Figures 7 to 11 is a diagram schematically illustrating a sensor device according to an embodiment of the inventive concept;

[0016] Fig.12 is a flow chart illustrating a method for controlling a semiconductor process according to an embodiment of the inventive concept;

[0017] Fig.13 and Fig.14 is a diagram illustrating an operation of a sensor device according to an embodiment of the inventive concept;

[0018] Fig.15 is a diagram schematically illustrating characteristic data generated by a sensor device according to an embodiment of the inventive concept; and

[0019] Figures 16 to 18 is a diagram illustrating an operation of a semiconductor processing apparatus according to an exemplary embodiment of the inventive concept. DETAILED DESCRIPTION

[0020] Hereinafter, example embodiments of the inventive concept will be described with reference to the accompanying drawings.

[0021] Figure 1 is a schematic diagram illustrating a semiconductor processing system according to an embodiment of the inventive concept.

[0022] refer to Figure 1 , the semiconductor processing system 10 according to an embodiment of the inventive concept may include a wafer transfer device 30, a load lock chamber 40, a transfer chamber 50, and a plurality of semiconductor processing devices 60, etc. For example, the wafer transfer device 30 may receive a wafer through a container such as a front open unified pod (FOUP) 20 in a production line in which the semiconductor processing system 10 is provided. The wafer transfer device 30 may transfer the wafer received through the FOUP 20 to the load lock chamber 40, or receive a wafer that has completed semiconductor processing in a plurality of semiconductor processing devices 60 from the load lock chamber 40, and accommodate the wafer in the FOUP 20.

[0023] The wafer transfer device 30 may include a wafer transfer robot 31 having an arm capable of gripping a wafer, a track unit 32 for moving the wafer transfer robot 31, and an aligner 33 for aligning the wafer, etc. Assuming an operation of transferring a wafer from the FOUP 20 to the load lock chamber 40, the wafer transfer robot 31 may take out a wafer stored in the FOUP 20 and place the wafer on the aligner 33. The aligner 33 may rotate the wafer to align the wafer in a predetermined direction. When the wafer alignment is completed in the aligner 33, the wafer transfer robot 31 may take out the wafer from the aligner 33 and move the wafer to the load lock chamber 40.

[0024] The load lock chamber 40 may include a loading chamber 41 connected to the wafer transfer device 30 and allowing the wafer loaded into the semiconductor processing apparatus 60 to be temporarily parked therein for semiconductor processing, and an unloading chamber 42 in which a wafer completed in the process and loaded out of the semiconductor processing apparatus 60 is temporarily parked. When the wafer aligned in the aligner 33 is loaded into the loading chamber 41, the interior of the loading chamber 41 may be depressurized to prevent external contaminants from entering.

[0025] The load lock chamber 40 may be connected to the transfer chamber 50, and a plurality of semiconductor processing apparatuses 60 may be connected around the transfer chamber 50. A wafer transfer robot 51 may be provided in the transfer chamber 50 to transfer wafers between the load lock chamber 40 and the plurality of semiconductor processing apparatuses 60. The wafer transfer robot 31 of the wafer transfer apparatus 30 may be referred to as a first wafer transfer robot, and the wafer transfer robot 51 of the transfer chamber 50 may be referred to as a second wafer transfer robot.

[0026] Each of the plurality of semiconductor processing devices 60 may perform semiconductor processing on a wafer. For example, the semiconductor processing performed by the plurality of semiconductor processing devices 60 may include a deposition process, an etching process, an exposure process, an annealing process, a polishing process, an ion implantation process, and the like.

[0027] Plasma may be formed inside at least one of the plurality of semiconductor processing devices 60 in order to perform at least some of the above-mentioned semiconductor processes. Plasma may be formed on a wafer, a mask, a mother substrate for a display, etc., which is subjected to semiconductor processing, and the yield of the process may vary depending on how the plasma is formed. Therefore, before actually performing semiconductor processing by the semiconductor processing device 60, an operation of forming plasma and analyzing its characteristics may be performed.

[0028] In an embodiment of the present inventive concept, a sensor device having a shape as a processing object, such as a wafer, a mask, a mother substrate for a display, etc., may be used to analyze characteristics of plasma formed in the semiconductor processing apparatus 60. For example, the sensor device may include a plurality of detection units installed at a plurality of different positions to collect detection information from the plasma and a controller that generates characteristic data representing characteristics of the plasma based on the detection information.

[0029] For example, a plurality of detection units may collect, as detection information, the temperature of the plasma, the vibration of the plasma, the intensity of light emitted from the plasma, etc. The controller may generate characteristic data representing the characteristics of the plasma in various forms based on the detection information, and may generate, for example, the density or temperature distribution of the plasma in the form of two-dimensional image data.

[0030] In the sensor device, the power required for the operation of the plurality of detection units and the controller can be provided by the battery of the sensor device itself. However, since the internal space of the semiconductor processing device 60 is maintained in an environment of very low gas pressure and high temperature when plasma is formed, problems such as battery expansion and damage may occur.

[0031] In an embodiment of the present inventive concept, an RF energy harvester that generates power from radio frequency (RF) power supplied to the semiconductor processing device 60 to form plasma may be included in the sensor device. Since the RF energy harvester can generate power when the RF power is supplied to the semiconductor processing device 60, the sensor device can be implemented even with a small-capacity battery, or the battery can be omitted from the sensor device according to the embodiment. Therefore, the problem of an error in the operation of the sensor device due to damage to the battery or the like when the semiconductor processing device 60 is operating can be prevented.

[0032] Figure 2 is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the inventive concept.

[0033] The semiconductor processing apparatus 100 according to an embodiment of the inventive concept may be an apparatus for performing semiconductor processing using plasma. The semiconductor processing apparatus 100 may include a chamber 110, a chuck voltage supply unit 120, a first bias power supply unit 130, a second bias power supply unit 140, and a gas supply unit 150.

[0034] The chamber 110 may include a housing 101, a first bias electrode 111, a second bias electrode 112, an electrostatic chuck 113, and a gas flow path 115. A process target on which a semiconductor process is to be performed may be seated on the electrostatic chuck 113. Figure 2 In the illustrated embodiment, the processing target is shown as a wafer W, but the processing target may be changed to a mother substrate for a display, a mask, or the like.

[0035] like Figure 2 As shown, a plurality of protrusions 113A having a protruding shape may be formed on the upper surface of the electrostatic chuck 113. The wafer W may be seated on the protrusions 113A, and thus, a space may be formed between the upper surface of the electrostatic chuck 113 and the wafer W. For example, for the purpose of cooling the wafer W, the space between the upper surface of the electrostatic chuck 113 and the wafer W may be filled with helium or the like.

[0036] In an embodiment, the wafer W may be fixed on the electrostatic chuck 113 by a Coulomb force generated from a chuck voltage supplied to the electrostatic chuck 113 by the chuck voltage supply unit 120. For example, the chuck voltage supply unit 120 may supply the chuck voltage to the electrostatic chuck 113 in the form of a constant voltage, and the chuck voltage may have a magnitude of hundreds to thousands of volts.

[0037] In order to perform semiconductor processing, air may be removed from the inside of the chamber 110 to form a near-vacuum environment with a gas pressure of about 1 mTorr, and a reaction gas may be introduced through the gas flow path 115. The first bias power supply unit 130 may supply a first bias power to the first bias electrode 111 located below the electrostatic chuck 113, and the second bias power supply unit 140 may supply a second bias power to the second bias electrode 112 located above the electrostatic chuck 113. Each of the first bias power supply unit 130 and the second bias power supply unit 140 may include an RF power source for supplying bias power.

[0038] A plasma 160 including ions 161, radicals 162, and electrons 163 of a reaction gas is generated in a space above the wafer W by the first bias power and the second bias power, and the reaction gas may be activated by the plasma 160 to increase reactivity. For example, when the semiconductor processing apparatus 100 is an etching apparatus, the ions 161, radicals 162, and electrons 163 of the reaction gas may be accelerated to the wafer W by the first bias power supplied to the first bias electrode 111 by the first bias power unit 130. At least some of the semiconductor substrate or layer included in the wafer W may be dry-etched by the ions 161, radicals 162, and electrons 163 of the reaction gas.

[0039] Light is emitted during the process of stabilizing particles (such as ions 161) in plasma 160, and the wavelength band of the emitted light may vary depending on the chemical species. Therefore, by detecting the intensity of light emitted from plasma 160 in a predetermined wavelength band, characteristics such as density and thickness of plasma can be detected.

[0040] In an embodiment of the inventive concept, instead of a wafer W on which an etching process, a deposition process, etc. using the plasma 160 is performed, a separately manufactured sensor device may be disposed on the electrostatic chuck 113, and raw data collected by the sensor device may be used to analyze characteristics such as temperature distribution and density of the plasma 160. The sensor device may measure the intensity of light emitted from the plasma 160 and the temperature of the plasma 160.

[0041] The sensor device may include an RF energy harvester that generates power required for operation. The RF energy harvester may generate DC voltage power by using RF power supplied by each of the first bias power supply unit 130 and the second bias power supply unit 140. Therefore, by implementing a small-capacity battery as a battery that supplies power required for operation of the sensor device or omitting the battery, problems such as battery damage may be prevented.

[0042] Figures 3 to 5 is a schematic diagram of a sensor device according to an embodiment of the inventive concept.

[0043] refer to Figure 3 , the sensor device 200 according to an embodiment of the inventive concept may include a plurality of detection units 210 (including a first detection unit 211 to an Nth detection unit 214), a controller 220, a wireless communication unit 230, a power supply unit 240, and the like. When the sensor device is installed inside a semiconductor processing apparatus, plasma may be formed on the sensor device, and the plurality of detection units 210 may collect detection information such as temperature, vibration, and intensity of light from different positions of the plasma. For example, the plurality of detection units 210 may collect the same type of detection information. However, according to an embodiment, at least some of the plurality of detection units 210 may collect different types of detection information.

[0044] For example, when each of the plurality of detection units 210 collects the intensity of light emitted from the plasma as detection information, each of the plurality of detection units 210 may include a light guide and a photodetector coupled to the light guide. The photodetector is designed to detect the intensity of light in a specific wavelength band, and for example, the photodetector may detect the intensity of light in a wavelength band ranging from 200 nm to 3 μm.

[0045] In this case, the controller 220 may obtain the intensity of light of each wavelength band emitted from a plurality of different regions of the plasma. The controller 240 may receive the intensity of light from the plurality of detection units 210 as detection information, and generate characteristic data representing the characteristics of the plasma using the received detection information. According to an embodiment, the controller 240 may process the detection information received from the plurality of detection units 210, and transmit the processed detection information to the outside through the wireless communication unit 230. In this case, the operation of generating the characteristic data representing the characteristics of the plasma using the detection information may be performed by another external device.

[0046] The power supply unit 240 may include an RF energy harvester 241, a battery 242, a charging circuit 243, and the like. The RF energy harvester 241 may generate power by using RF power supplied to a semiconductor processing apparatus to form plasma around the sensor device 200. The battery 242 may be charged by power generated by the RF energy harvester 241, and may also be charged by power supplied by the charging circuit 243. For example, the charging circuit 243 may include at least one of a wireless charging circuit and a wired charging circuit.

[0047] When the plurality of detection units 210 collect detection information from the plasma, power required for the operation of the plurality of detection units 210 and the controller 220 may be supplied from the RF energy harvester 241 or the battery 242. For example, in the case where the capacity of the battery 242 decreases below a predetermined reference capacity while the plurality of detection units 210 collect detection information, the controller 220 may control the power supply unit 240 so that the battery 242 is charged by power generated by the RF energy harvester 241, or the power generated by the RF energy harvester 241 is directly supplied to the plurality of detection units 210 and the controller 220.

[0048] When the sensor device 200 is taken out of the semiconductor processing apparatus and stored in a separate management device, the charging circuit 243 can charge the battery 242 in a wired / wireless charging manner. Alternatively, if the management device includes an RF module, the RF power output by the RF module included in the management device can be converted into electricity by the RF energy harvester 241, and the battery 242 can be charged in the management device by the power generated by the RF energy harvester 241.

[0049] Next, refer to Figure 4 , the sensor device 200A according to an embodiment of the inventive concept may include a plurality of detection units 210 (including a first detection unit 211 to an Nth detection unit 214), a controller 220, a wireless communication unit 230, a power supply unit 240A, etc. The configuration and operation of the plurality of detection units 210 (including a first detection unit 211 to an Nth detection unit 214), the controller 220, and the wireless communication unit 230 may be similar to the above reference Figure 3 Describes the configuration and operation.

[0050] In accordance with Figure 4In the sensor device 200A of the illustrated embodiment, the power supply unit 240A may include an RF energy harvester 241A and a battery 242A. When the plurality of detection units 210 collect detection information from the plasma, the power required for the operation of the plurality of detection units 210 and the controller 220 may be directly supplied from the RF energy harvester 241A or the battery 242A. When the capacity of the battery 242A decreases below a reference capacity, the controller 220 may control the power supply unit 240A so that the RF energy harvester 241A directly supplies power or charges the battery 242A.

[0051] Since the power supply unit 240A does not have a separate charging circuit, Figure 4 In the sensor device 200A of the illustrated embodiment, the battery 242A can be charged only by the RF energy harvester 241A. For example, when the sensor device 200A in the semiconductor processing apparatus completes the operation of collecting the detection information required for analyzing the characteristics of the plasma, the sensor device 200A can be stored in a FOUP or the like and transferred to other management equipment. When the sensor device 200A is introduced into the management equipment, the management equipment can receive the detection information collected by the sensor device 200A or the characteristic data generated from the detection information by the controller 220 through the wireless communication unit 230 of the sensor device 200A.

[0052] The management device into which the sensor device 200A is introduced may include an RF module. When the sensor device 200A is introduced, the RF module may output RF power, and the RF energy harvester 241A may generate power using the RF power. The battery 242A may be charged by the power generated by the RF energy harvester 241A, and the controller 220 and the wireless communication unit 230 may operate.

[0053] Next, refer to Figure 5 , the sensor device 200B according to an embodiment of the inventive concept may include a plurality of detection units 210 (including a first detection unit 211 to an Nth detection unit 214), a controller 220, a wireless communication unit 230, a power supply unit 240B, etc. The configuration and operation of the plurality of detection units 210 (including a first detection unit 211 to an Nth detection unit 214), the controller 220, and the wireless communication unit 230 may be similar to the above reference Figure 3 Describes the configuration and operation.

[0054] In accordance with Figure 5In the sensor device 200B of the illustrated embodiment, the power supply unit 240B may include an RF energy harvester 241B. Since the power supply unit 240B does not include a separate battery, when the sensor device 200B is introduced into a semiconductor processing apparatus and the plurality of detection units 210 collect detection information from plasma, the power required for the operation of the plurality of detection units 210 and the controller 220 may be directly supplied from the RF energy harvester 241B.

[0055] The sensor device 200B taken out of the semiconductor processing apparatus may be stored in a FOUP or the like and transferred to other management devices. When the sensor device 200B is introduced into the management device, the management device may receive detection information collected by the sensor device 200B or characteristic data generated from the detection information by the controller 220 through the wireless communication unit 230 of the sensor device 200B. The RF energy harvester 241B may generate power required for the operation of the controller 220 and the wireless communication unit 230 of the sensor device 200B. When the sensor device 200B is accommodated in the management device, the RF module included in the management device may output RF power, and the RF energy harvester 241B may generate power using the RF power output by the RF module of the management device. The controller 220 and the wireless communication unit 230 may operate with the power generated by the RF energy harvester 241B, and the management device may receive detection information or characteristic data from the sensor device 200B.

[0056] Figure 6 is a diagram schematically illustrating an RF energy harvester included in a sensor device according to an embodiment of the inventive concept.

[0057] refer to Figure 6 , the RF energy harvester 300 according to an embodiment of the inventive concept may include an antenna 310, a matching circuit 320, a rectifier circuit 330, and a storage circuit 340. The antenna 310 may be implemented using a coil pattern, etc., and may convert an RF signal into an AC voltage. The RF energy harvester 300 according to an embodiment of the inventive concept may be installed in a sensor device, and convert RF power applied to a semiconductor processing device in which the sensor device is introduced into the sensor device into an AC voltage.

[0058] The matching circuit 320 is a circuit for impedance matching and can reduce resistance loss so that maximum power corresponding to the AC voltage generated by the antenna 310 can be delivered to the rectifier circuit 330 and the storage circuit 340. The matching circuit 320 can be implemented as a resonator circuit including a matching capacitor 321 and a matching inductor 322.

[0059] The rectifier circuit 330 may include a first capacitor 331, a second capacitor 332, a first rectifier diode 333, and a second rectifier diode 334. The first capacitor 331 may be connected to the output terminal of the matching circuit 320, and the first rectifier diode 333 may be connected between the ground node and the first capacitor 331. The second capacitor 332 may be connected to the ground node, and the second rectifier diode 334 may be connected between the first capacitor 331 and the second capacitor 332. Considering that the frequency of the RF power detected by the antenna 310 is very high, the first rectifier diode 333 and the second rectifier diode 334 may be implemented using Schottky barrier diodes capable of fast switching.

[0060] The rectifier circuit 330 may convert the AC voltage having passed through the matching circuit 320 into a DC voltage. When the AC voltage having passed through the matching circuit 320 is in the forward direction, a current path may be formed with the first capacitor 331, the second rectifier diode 334, and the second capacitor 332, and the second capacitor 332 may be charged. When the AC voltage is reversed, the charge charged in the second capacitor 332 is not discharged by the second rectifier diode 334, and a current path including the first rectifier diode 333 and the first capacitor 331 may be formed.

[0061] The storage circuit 340 is a circuit that stores power of the DC voltage generated by the rectifier circuit 330, and may include at least one storage capacitor 341. The power stored in the storage capacitor 341 may be output as an energy source, and in an embodiment of the inventive concept, the power stored in the storage circuit 340 may be used to charge a battery included in the sensor device together with the RF energy harvester 300. Alternatively, power required for the operation of a plurality of detection units or controllers included in the sensor device may be directly supplied from the storage circuit 340.

[0062] According to an embodiment, the sensor device may include a plurality of RF energy harvesters 300. For example, by providing two or more RF energy harvesters 300 that generate power in response to RF signals of the same frequency, the power required for the operation of the sensor device may be generated more stably. Alternatively, the versatility of the sensor device may be improved by including two or more RF energy harvesters that generate power in response to RF signals of different frequencies.

[0063] Figures 7 to 11 is a diagram schematically illustrating a sensor device according to an embodiment of the inventive concept.

[0064] First reference Figures 7 to 10, a sensor device 400 according to an embodiment of the inventive concept may include an upper substrate 401 and a lower substrate 402. A space is formed between the upper substrate 401 and the lower substrate 402, and components required for the operation of the sensor device 400 may be disposed in the space. Each of the upper substrate 401 and the lower substrate 402 may have a shape such as a semiconductor wafer, a mask substrate, or a mother substrate for a display.

[0065] According to the above reference Figures 7 to 10 The sensor device 400 of the described embodiment can collect the intensity of the light emitted from the plasma as detection information to generate characteristic data representing the uniformity of the plasma. To this end, the upper substrate 401 may include a plurality of light receiving regions 401A to 401M that receive the light emitted from the plasma, and the number of the plurality of light receiving regions 401A to 401M may be variously modified according to the embodiment.

[0066] Each of the plurality of light receiving regions 401A to 401M may be formed on the upper substrate 401, and may be formed as a region having a relatively high light transmittance compared to other surrounding regions. The plurality of light receiving regions 401A to 401M may be formed in different positions of the upper substrate 401, and therefore, when plasma is formed on the sensor device 400, light emitted from different positions of the plasma may be incident on the plurality of light receiving regions 401A to 401M.

[0067] The sensor device 400 may include a plurality of optical members 410, a selection element 420, a spectral sensor 430, power supply units 440 and 450, a wireless communication unit 460, a controller 470, etc. Figure 8 , each of the plurality of optical members 410 may include a light receiving optical system 411 and a light guide 413. The light receiving optical system 411 may include a mirror disposed below one of the plurality of light receiving regions 401A to 401M, and light reflected from the mirror may be incident on the light guide 413. The light guide 413 may transmit the light reflected by the light receiving optical system 411 to the selection element 420, and may include, for example, an optical fiber.

[0068] The selection element 420 may determine one selected optical member among the plurality of optical members 410 and output light transmitted through the selected optical member to the reflector 425. The reflector 425 may change a path of light output from the selection element 420 and transmit the light to the spectrum sensor 430.

[0069] The spectral sensor 430 may include a wavelength selector 431 and a photodetector 433, and the wavelength selector 431 may be disposed in a path along which light travels from the reflector 425 to the photodetector 433. For example, the wavelength selector 431 may include a plasma filter, a grating structure, or a microresonator using the thin film interference principle. When the wavelength selector 431 includes a plasma filter, the wavelength selector 431 may include a plurality of filter areas that allow light in different unit bands to be transmitted through. For example, a plurality of filter areas may be arranged in a direction parallel to the upper surface of the upper substrate 401. In addition, the photodetector 433 may also include a plurality of photodetection elements arranged in a direction to detect the intensity of light in each of the plurality of unit bands.

[0070] According to embodiments, the plurality of optical members 410, the selection element 420, and the spectrum sensor 430 may be implemented in other structures. For example, the wavelength selector 431 and the photodetector 433 may be connected to each of the plurality of optical members 410, respectively. In this case, the selection element 420 may be omitted, and the controller 470 may control the wavelength selector 431 so that the photodetector 433 detects the intensity of light in a specific wavelength band.

[0071] The intensity of light detected by the spectrum sensor 430 may be transmitted to the controller 470, and the controller 470 may generate characteristic data representing the characteristics of plasma using the intensity of light detected by the spectrum sensor 430. For example, the controller 470 may generate characteristic data by matching the intensity of light according to the wavelength band with each of the plurality of light receiving regions 401A to 401M. Thus, raw data including the intensity of light detected in a plurality of unit wavelength bands may be generated for each of the plurality of light receiving regions 401A to 401M. According to an embodiment, the controller 470 may generate characteristic data representing the uniformity of plasma using the intensity of light.

[0072] exist Figures 7 to 10 In the illustrated embodiment, the controller 470 may be mounted on the circuit board 405 together with the selection element 420, the spectrum sensor 430, the power supply units 440 and 450, and the wireless communication unit 460. The intensity of light detected by the spectrum sensor 430 may be transmitted to the controller 470 through the circuit board 405, and the controller 470 may control the operation of the selection element 420 and the spectrum sensor 430 through the circuit board 405. Figures 7 to 10 In the depicted embodiment, the circuit board 405 may have a shape different from that of the upper substrate 401 and the lower substrate 402 .

[0073] refer to Figures 8 to 10, the lower protective (i.e., shielding) film 403 may be disposed between the lower substrate 402 and the circuit board 405, and the upper protective (i.e., shielding) film 404 may be attached to the lower surface of the upper substrate 401. Each of the lower protective film 403 and the upper protective film 404 may protect the selection element 420, the spectrum sensor 430, the wireless communication unit 460, the controller 470, and the like. A strong magnetic field may be formed in the internal space of the semiconductor processing device where plasma is formed, and the temperature may also be very high. Each of the lower protective film 403 and the upper protective film 404 may be formed of a permalloy having a high magnetic field shielding performance, and the like. The area of ​​each of the lower protective film 403 and the upper protective film 404 may be greater than the area of ​​the circuit board 405.

[0074] The power required for the operation of the selection element 420, the spectrum sensor 430, the wireless communication unit 460, and the controller 470 may be supplied by the power supply units 440 and 450. Each of the power supply units 440 and 450 may include an RF energy harvester. For example, the first power supply unit 440 may include a first battery and a first RF energy harvester, and the second power supply unit 450 may include a second battery and a second RF energy harvester.

[0075] The structure of each of the first RF energy harvester and the second RF energy harvester may be similar to that of the above reference Figure 6 In an embodiment, the antenna included in the first RF energy harvester may generate an AC voltage in response to a first RF power of a first frequency band. The antenna included in the second RF energy harvester may generate an AC voltage in response to a second RF power of a second frequency band different from the first frequency band. In this way, by providing the sensor device 400 with a plurality of RF energy harvesters that generate power in response to RF power of different frequency bands, the sensor device 400 may be used to control various semiconductor processing devices that use RF power of different frequency bands.

[0076] The sensor device 400 can generate power by itself through the RF energy harvester when plasma is formed in the semiconductor processing device. Therefore, it is possible to adopt a low-capacity battery included in each of the power supply units 440 and 450, or the battery can be omitted, and the following problems can be prevented: the battery is damaged by the internal environment of the semiconductor processing device having a state close to vacuum and the reliability of the sensor device 400 is deteriorated.

[0077] refer to Fig. 9, the first antenna 441 connected to the first RF energy harvester included in the first power supply unit 440 may be disposed outside the lower shielding film 403 and the upper shielding film 404. Therefore, the first antenna 441 may be more exposed to RF power, and the power generation efficiency of the first RF energy harvester may be increased. In addition to the first antenna 441, a matching circuit, a rectifier circuit, a storage circuit, etc. of the first RF energy harvester may be arranged to overlap with the lower shielding film 403 and the upper shielding film 404.

[0078] The arrangement of the first antenna 441 may vary according to the embodiment. Fig.10 In the illustrated embodiment, the first antenna 441 included in the sensor device 400A may be disposed at a position overlapping with the upper shielding film 404 (i.e., the upper shielding film 404 overlaps with or covers the first antenna 441, so that the first antenna 441 is exposed to a reduced amount of RF power). The upper shielding film 404 may include a first region 404A and a second region 404B, and the first antenna 441 may overlap with the second region 404B (i.e., the second region 404B of the upper shielding film 404 overlaps with or covers the first antenna 441, so that the first antenna 441 is exposed to a reduced amount of RF power). The first region 404A may overlap with the battery of the selection element 420, the spectral sensor 430, the wireless communication unit 460, the controller 470, and the power supply unit 440 (i.e., the first region 404A of the upper shielding film 404 overlaps with or covers the battery of the selection element 420, the spectral sensor 430, the wireless communication unit 460, the controller 470, and the power supply unit 440, so that the battery of the selection element 420, the spectral sensor 430, the wireless communication unit 460, the controller 470, and the power supply unit 440 are completely shielded or exposed to a reduced amount of RF power).

[0079] like Fig.10 As shown, the first region 404A may have a first thickness, and the second region 404B may have a second thickness, and the first thickness may be greater than the second thickness. Therefore, by exposing the first antenna 441 to RF power relatively strongly compared to other components, the power generation efficiency of the first RF energy harvester may be increased.

[0080] Next, refer to Fig.11, the sensor device 500 according to an embodiment of the inventive concept may include an upper substrate and a lower substrate, and a plurality of detection units 501A to 501H disposed in a space between the upper substrate and the lower substrate, a power supply unit 510, a controller 520, a data storage device 530, etc. The power supply unit 510 may include a first RF energy harvester 511, a second RF energy harvester 513, and a battery 515. The first RF energy harvester 511 may include a first antenna 512, and the second RF energy harvester 513 may include a second antenna 514.

[0081] As described above, the first antenna 512 can generate an AC voltage in response to the first RF power of the first frequency band, and the second antenna 514 can generate an AC voltage in response to the second RF power of the second frequency band different from the first frequency band. The first antenna 512 and the second antenna 514 can be disposed outside the protective film 504 (i.e., not shielded or covered by the protective film 504) and exposed to the RF power. The first RF energy harvester 511 and the second RF energy harvester 513 can charge the battery 515.

[0082] exist Fig.11 In the illustrated embodiment, each of the plurality of detection units 501A to 501H may include a sensor for detecting the temperature or vibration of plasma formed in the internal space of the semiconductor processing apparatus into which the sensor device 500 is introduced. For example, each of the plurality of detection units 501A to 501H may include a sensor for detecting the temperature of plasma, and the power required for the operation of each of the plurality of detection units 501A to 501H may be supplied from the battery 515. The battery 515 may also supply the power required for the operation of the controller 520 and the data storage device 530.

[0083] The controller 520 may generate characteristic data indicating the temperature distribution of plasma formed on the sensor device 500 by using the temperature information collected by each of the plurality of detection units 501A to 501H. The controller 520 may generate characteristic data indicating the temperature distribution changing with time by using the temperature information collected by each of the plurality of detection units 501A to 501H at different times, and store the characteristic data in the data storage device 530. The data storage device 530 may be implemented as a memory having a non-volatile characteristic.

[0084] Fig.12 is a flowchart illustrating a method for controlling a semiconductor process according to an embodiment of the inventive concept.

[0085] refer to Fig.12, a method for controlling semiconductor processing according to an embodiment of the inventive concept may start by introducing a sensor device into a semiconductor processing apparatus (S10). The semiconductor processing apparatus may be an apparatus that performs semiconductor processing such as deposition and etching by forming plasma in a space inside a chamber.

[0086] The sensor device may have a structure according to at least one of the above-described embodiments. For example, when the processing target introduced into the semiconductor processing apparatus is a wafer, the sensor device may be implemented as described above with reference to Figures 7 to 11 However, according to an embodiment, when a processing target introduced into a semiconductor processing apparatus is a mother substrate for a display, the sensor device may have the same shape as the mother substrate for a display, rather than the same shape as a wafer.

[0087] A sensor device introduced into a semiconductor processing apparatus may be placed on an electrostatic chuck and fixed to the electrostatic chuck by a Coulomb force generated by a chuck voltage supplied to the electrostatic chuck. When the sensor device is fixed to the electrostatic chuck, plasma may be formed in an internal space of a chamber of the semiconductor processing apparatus. For example, plasma may be formed by RF power supplied to a bias electrode disposed within the chamber of the semiconductor processing apparatus. The characteristics of the RF power (e.g., frequency band and / or power level) may vary depending on a process to be performed using the semiconductor processing apparatus.

[0088] The thickness and density of the plasma generated by the RF power can be determined by the preset control variables of the semiconductor processing device. For example, the control variables may include the RF power, the distance between the upward and downward bias electrodes in the chamber, the temperature and pressure in the chamber, etc.

[0089] When plasma is formed in the chamber of the semiconductor processing device, the sensor device may operate to generate characteristic data (S20). The sensor device may include a plurality of detection units that collect the temperature of the plasma, the intensity of the light emitted from the plasma, etc. as detection information, and a controller that generates characteristic data representing the characteristics of the plasma using the detection information. For example, in the process of stabilizing particles (such as ions) included in the plasma, light of a specific band is emitted, and the band may vary depending on the chemical species. The sensor device may detect the intensity of the light emitted from the plasma separately according to the band, and the controller may generate characteristic data representing the uniformity of the plasma using the intensity of the light according to the band.

[0090] The power required for the operation of the multiple detection units and the controller can be supplied from a battery included in the sensor device and / or an RF energy harvester included in the sensor device. The RF energy harvester may include an antenna that converts RF power into an AC voltage and a voltage generating circuit that converts the AC voltage generated by the antenna into a DC voltage. The voltage generating circuit may include multiple circuits for impedance matching, rectification, and energy storage.

[0091] According to an embodiment, the DC voltage generated by the RF energy harvester can be directly supplied as power to multiple detection units and / or controllers, or can be used to charge a battery. Therefore, the sensor device can be implemented using a small-capacity battery, thereby reducing the risk of battery damage, or the sensor device can be implemented using a structure that does not include a battery.

[0092] When the sensor device generates characteristic data, the sensor device can be taken out of the semiconductor processing device (i.e., removed from the semiconductor processing device) by a transfer robot connected to the semiconductor processing device (S30). The sensor device removed from the chamber can be installed on a FOUP, etc., and transferred to another management location. According to an embodiment, when installed on a FOUP, the sensor device can receive power from the FOUP to charge the battery, or can transmit characteristic data to the outside through a wireless communication unit inside the sensor device. The characteristic data can be transmitted to a server, etc. that controls the entire system including the semiconductor processing device.

[0093] According to an embodiment, the sensor device may be mounted on a FOUP and moved to a separate management device. The management device may perform operations such as receiving characteristic data from the sensor device and analyzing the characteristic data to adjust a control variable of the semiconductor processing device, or transmitting the characteristic data to a server. If a separate battery is not included in the sensor device, the management device may include an RF module that outputs RF power so that the RF energy harvester may generate power to perform an operation of acquiring characteristic data from the sensor device. For example, the RF power output from the RF module included in the management device may have the same characteristics as the RF power applied to the bias electrode in the semiconductor processing device in which the sensor device is introduced in step S10.

[0094] The management device receiving the characteristic data may analyze the state of the plasma based on the characteristic data (S40). In an embodiment, the characteristic data may include image data that represents the intensity of light emitted from the plasma in the internal space of the chamber by position and band. The control device may analyze the thickness and density of the plasma formed in the chamber using the characteristic data, and control the semiconductor processing device according to the result (S50). For example, when the density of the plasma is uneven, the control device may increase or decrease the distance between the bias electrodes in the chamber of the semiconductor processing device.

[0095] Fig.13 and Fig.14 is a diagram illustrating an operation of a sensor device according to an embodiment of the inventive concept.

[0096] Fig.13 and Fig.14 FIG. 6 is a diagram schematically showing a management device 600 in which a sensor device introduced into a semiconductor processing apparatus and generating characteristic data is accommodated in a FOUP 650 and transported. Fig.13 , the management device 600 may include a housing 601 and a load port 603 that is attached to the housing 601 and provides a receiving space in which a FOUP 650 may be located.

[0097] When the FOUP 650 storing the sensor devices therein is seated on the load port 603, at least one sensor device may be removed from the FOUP 650 and introduced into the management device 600. Fig.14 , the sensor device 660 can be stored in the FOUP 650, and one sensor device 640 can be selectively loaded into the management device 600 by the loading device 610.

[0098] In addition to the loading device 610, the management device 600 may include a control device 620 and an RF module 630. When the loading device 610 brings one sensor device 640 among the sensor devices 660 accommodated in the FOUP 650 into the management device 600, the RF module 630 may operate. The sensor device 640 may include an RF energy harvester, and the RF energy harvester may generate power required for the operation of the sensor device 640 using RF power output from the RF module 630.

[0099] The control device 620 may receive characteristic data from the sensor device 640 through a wired / wireless communication method. The characteristic data may be data generated by introducing the sensor device 640 into the semiconductor processing apparatus and collecting the temperature of the plasma, the vibration of the plasma, the intensity of the light emitted from the plasma, etc. as detection information. The control device 620 may analyze the characteristics of the plasma generated in the semiconductor processing apparatus using the characteristic data, generate a command for controlling the semiconductor processing apparatus based on the analysis, and transmit the generated command to the semiconductor processing apparatus. Therefore, the characteristics including the uniformity of the plasma may be improved, and the yield of the semiconductor processing may be improved.

[0100] Fig.15 is a diagram schematically illustrating characteristic data generated by a sensor device according to an embodiment of the inventive concept.

[0101] exist Fig.15 In the illustrated embodiment, the characteristic data 700 may be generated in the form of image data. The two-dimensional plane showing the characteristic data 700 may correspond to a plane parallel to the upper surface of the electrostatic chuck on which the sensor device and the processing target are located, and the characteristic data 700 may show the difference in the intensity of light corresponding to a specific wavelength band in the form of an image. In an embodiment, the characteristic data 700 may be image data generated by the intensity of light detected in a plurality of light receiving areas 710 defined in the sensor device.

[0102] refer to Fig.15 , the intensity of light may appear relatively strong toward the center of a plane parallel to the upper surface of the electrostatic chuck, and may appear relatively weak toward the periphery of the plane. Based on such characteristic data, a control device (such as a server controlling a system including a semiconductor processing apparatus) may determine that plasma has an uneven distribution because the center density of plasma formed in the space above the electrostatic chuck is high and the periphery density of plasma is low. Therefore, the control device may determine that the uniformity of plasma is deteriorated (i.e., plasma is not uniform).

[0103] The control device may adjust the control variables of the semiconductor processing apparatus based on the characteristics, such as the plasma density determined by referring to the characteristic data 700. For example, Fig.15 As shown, when it is determined that the density of plasma is high at the center and low at the periphery, the control device may change the distance between bias electrodes installed in the chamber of the semiconductor processing apparatus.

[0104] For example, before actually performing semiconductor processing, a sensor device introduced into a semiconductor processing apparatus may refer to the Fig.15 The characteristic data 700 is generated as described above. As described above, the wavelength band of light emitted from plasma may vary depending on chemical species. Therefore, the characteristics of various plasmas generated by different types of gases may be analyzed using a sensor device according to an embodiment of the inventive concept.

[0105] According to an embodiment, the control device that receives the characteristic data 700 from the sensor device may determine the characteristics of the plasma using only the relative distribution represented by the characteristic data 700, or determine the characteristics, such as the uniformity of the plasma, by comparing the characteristic data 700 with pre-generated reference data. For example, the characteristic data 700 may be compared with the reference data to determine whether the intensity of the light emitted from the plasma is stronger than the reference intensity, and the RF power supplied to the semiconductor processing device may be increased or decreased based on the determination.

[0106] In addition, as described above, the characteristic data 700 may be generated to indicate temperature distribution rather than the intensity of light. In this case, the sensor device may include a temperature sensor for measuring temperature rather than a photodetector for detecting the intensity of light.

[0107] Figures 16 to 18 is a diagram illustrating an operation of a semiconductor processing apparatus according to an exemplary embodiment of the inventive concept.

[0108] Figures 16 to 18 It may be a diagram provided to describe the following operation: referring to the characteristic data, the operation of the semiconductor processing apparatus 800 is controlled by a control device (such as a server) that controls a system including the semiconductor processing apparatus. The characteristic data referred to by the control device may be data generated based on detection information collected from plasma by a sensor device introduced into the semiconductor processing apparatus 800 before actually performing semiconductor processing using plasma in the semiconductor processing apparatus 800.

[0109] refer to Figures 16 to 18 , the semiconductor processing apparatus 800 may include a first bias electrode 810 and a second bias electrode 820, and may generate plasma 805 in a space therebetween. The plasma 805 may be formed on a wafer W to be processed.

[0110] Fig.16 810 and 820. When the distance between the first bias electrode 810 and the second bias electrode 820 is small, the density of the plasma 805 may be uneven. Fig.16 , the density of the plasma 805 may appear low at the center and periphery of the space above the wafer W, while the density of the plasma 805 may appear high in the space therebetween.

[0111] Fig.17 8. FIG. 8 is a diagram showing a case where the distance between the first bias electrode 810 and the second bias electrode 820 is set to be large. As the distance between the first bias electrode 810 and the second bias electrode 820 becomes wider, the density of the plasma 805 may increase toward the center of the wafer W and decrease toward the periphery.

[0112] Fig.18 8 is a diagram showing a case where the distance between the first bias electrode 810 and the second bias electrode 820 is appropriately set. Fig.18 In the illustrated embodiment, the density of the plasma 805 is uniform in the space above the wafer W. Figures 16 to 18As described, the density of the plasma 805 according to the position in the space above the wafer W may vary according to the distance between the first bias electrode 810 and the second bias electrode 820 .

[0113] In an embodiment of the inventive concept, before introducing a wafer W to actually perform semiconductor processing, whether the distance between the first bias electrode 810 and the second bias electrode 820 is properly set may be determined by introducing a sensor device instead of the wafer W and forming the plasma 805. As described above, the sensor device may collect the intensity of light emitted from different positions of the space where the plasma 805 is formed as detection information.

[0114] When Fig.16 When the distance between the first bias electrode 810 and the second bias electrode 820 is set as shown, the intensity of light at a position close to the center of the sensor device can be detected as small, while the intensity of light at a position close to the periphery of the sensor device can be detected as large. Fig.17 When the distance between the first bias electrode 810 and the second bias electrode 820 is set as shown, the intensity of light can be detected as large at a position close to the center of the sensor device, while the intensity of light can be detected as small at a position close to the periphery of the sensor device.

[0115] The control device of the semiconductor processing apparatus can adjust the distance between the first bias electrode 810 and the second bias electrode 820 by referring to the intensity of light detected by the sensor device from multiple positions. For example, when the intensity of light is detected as relatively strong at a position close to the center of the sensor device, the control device can lower the position of the second bias electrode 820 to reduce the distance between the first bias electrode 810 and the second bias electrode 820. In addition, when the intensity of light is detected as relatively strong at a position close to the outside of the sensor device, the control device can raise the position of the second bias electrode 820 to increase the distance between the first bias electrode 810 and the second bias electrode 820. In this way, by adjusting the distance between the first bias electrode 810 and the second bias electrode 820 based on the intensity of light collected by the sensor device, during actual semiconductor processing by introducing a wafer W, a semiconductor device having a structure such as the semiconductor device 810 and the second bias electrode 820 can be formed. Fig.18 The uniform density plasma 805 is shown and can improve the throughput of semiconductor processing.

[0116] According to an embodiment of the present inventive concept, a sensor device having the same shape as a processing target (such as a wafer, a mask, or a mother substrate for a display) is provided, and the sensor device can be introduced into a semiconductor processing apparatus to collect characteristic data to analyze the characteristics of a plasma. The power required for the operation of the sensor device can be generated by an RF energy harvester included in the sensor device, and therefore, the battery inside the sensor device can be implemented as a small capacity or the battery can be omitted, thereby reducing problems that may occur due to the battery in an extreme environment and improving the reliability of the sensor device.

[0117] While exemplary embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations are possible without departing from the scope of the inventive concept as defined by the appended claims.

Claims

1. A sensor device, include: a first substrate; a second substrate on the first substrate; a plurality of detection units between the first substrate and the second substrate, wherein each of the plurality of detection units is configured to collect detection information from plasma formed in a space above the second substrate; a controller configured to generate characteristic data representing characteristics of the plasma based on the detection information collected by the plurality of detection units; and A power supply unit includes a radio frequency (RF) energy harvester configured to generate power for operation of at least one of the plurality of detection units and the controller from RF power used to form the plasma.

2. The sensor device according to claim 1, in, The RF energy harvester includes: an antenna configured to receive RF power; a rectifier circuit configured to convert an AC voltage corresponding to the RF power into a DC voltage; a matching circuit connected between the antenna and the rectifier circuit; and a storage circuit configured to store power corresponding to the DC voltage.

3. The sensor device according to claim 2, in, The matching circuit includes a matching capacitor and a matching inductor, and The rectifier circuit includes: a first capacitor connected to the output terminal of the matching circuit; a second capacitor connected between the first capacitor and a ground node; a first rectifier diode connected between the first capacitor and the ground node; and a second rectifier diode connected between the first capacitor and the second capacitor.

4. The sensor device according to claim 2, further comprising: include: A first shielding film is attached to the second substrate and is positioned so as to cover the controller.

5. The sensor device according to claim 4, in, The antenna is not covered by the first shielding film.

6. The sensor device according to claim 4, wherein The first shielding film includes a first region having a first thickness and a second region having a second thickness less than the first thickness, and The antenna is covered by the second area of ​​the first shielding film.

7. The sensor device according to claim 4, in, The matching circuit, the rectifier circuit, and the storage circuit are covered by the first shielding film.

8. The sensor device according to claim 1, further comprising: include: A circuit board is provided on the first surface of the first substrate, wherein the controller and the power supply unit are mounted on the circuit board.

9. The sensor device according to claim 8, further comprising: include: A second shielding film is between the circuit board and the first substrate.

10. The sensor device according to claim 1, in, The power supply unit includes a battery configured to be charged by the power generated by the RF energy harvester and configured to output a power supply voltage to at least one of the plurality of detection units and the controller.

11. The sensor device according to claim 10, in, The power supply unit includes a charging circuit separate from the RF energy harvester, wherein the charging circuit is configured to charge the battery.

12. The sensor device according to claim 1, in, The detection information collected by each of the plurality of detection units includes at least one of a temperature of the plasma, a vibration of the plasma, and an intensity of light emitted from the plasma.

13. The sensor device according to claim 1, further comprising: include: A wireless communication unit is configured to provide communication between the controller and an external device, and wherein the wireless communication unit is powered by power generated by the power supply unit.

14. The sensor device according to claim 1, in, The RF energy harvester includes a first RF energy harvester configured to generate the power using first RF power of a first frequency band; and a second RF energy harvester configured to generate the power using second RF power of a second frequency band different from the first frequency band.

15. A sensor device, include: a first substrate; a second substrate on the first substrate; a coil pattern between the first substrate and the second substrate, wherein the coil pattern is configured to convert radio frequency (RF) power for forming plasma on the second substrate into an AC voltage; a voltage generating circuit connected to the coil pattern and configured to convert the AC voltage into a DC voltage; and A controller is configured to receive the DC voltage output from the voltage generating circuit and generate characteristic data representing characteristics of the plasma.

16. The sensor device according to claim 15, further comprising: include: a first shielding film attached to the first surface of the second substrate and configured to cover the controller, wherein the first shielding film comprises permalloy, Wherein, the coil pattern is not covered by the first shielding film.

17. The sensor device according to claim 15, in, The characteristic data includes at least one of a temperature distribution and a density distribution of the plasma.

18. The sensor device according to claim 15, in, The controller receives the DC voltage from the voltage generating circuit in the absence of a battery.

19. The sensor device according to claim 15, in, The coil pattern includes a first coil pattern converting a first RF power of a first frequency, and a second coil pattern converting a second RF power of a second frequency different from the first frequency.

20. A sensor device, include: a pair of base plates providing a space therebetween; a plurality of detection units disposed in the space, wherein each of the plurality of detection units is configured to collect detection information from plasma formed on the pair of substrates; a controller configured to generate at least one of a temperature distribution and a density distribution of the plasma based on the detection information; and A power supply unit is configured to generate power for operation of at least one of the plurality of detection units and the controller by converting radio frequency (RF) energy for generating the plasma into a DC voltage, and supply the power to the plurality of detection units and the controller without passing through a battery.

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