Upright, flip-chip, and vertical LED chips; MIP chip structure and their fabrication methods.

Abstract

This invention provides upright, flip-chip, and vertical LED chips, MIP chip structures, and their fabrication methods, including: a substrate; a first LED chip structure, including: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, and a transparent conductive layer stacked sequentially in a direction away from the substrate; the N-type epitaxial layer includes a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, and the transparent conductive layer are sequentially stacked on the second step; a first electrode and a second electrode; the first electrode is formed on the first step; the second electrode is formed on the surface of the transparent conductive layer; a color conversion layer and a first reflective layer; the color conversion layer is distributed on the side of the N-type epitaxial layer near the substrate, the sidewall of the first LED chip structure, and the surface of the transparent conductive layer, and exposes the first electrode and the second electrode; the first reflective layer covers the color conversion layer. This technical solution solves the problems of low color conversion efficiency and blue light leakage in LED chips.

Description

Technical Field

[0001] This invention relates to the field of semiconductor devices, and more particularly to a conventional, flip-chip, and vertical LED chip, a MIP chip structure, and a method for manufacturing the same. Background Technology

[0002] Currently, red LED chips are a pain point in the industry, especially as product size decreases. Due to the size effect of materials, the brightness of GaAS or PAlGaInP materials decreases significantly as the chip size decreases, which cannot meet the commercialization requirements of MicroLED chips. InGaN red light technology suffers from low overall efficiency and difficulty in controlling yield because In is prone to decomposition during high-temperature growth.

[0003] Therefore, how to improve the reliability and excitation efficiency of LED chip products, and how to solve the light leakage problem of LED chip products, are industry pain points that those skilled in the art need to overcome. Summary of the Invention

[0004] This invention provides upright, flip-chip, and vertical LED chips, MIP chip structures, and their manufacturing methods to solve the problems of low color conversion efficiency and blue light leakage in LED chips.

[0005] According to a first aspect of the present invention, a standard-mount LED chip is provided, comprising:

[0006] Substrate;

[0007] A first LED chip structure includes: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, and a transparent conductive layer, stacked sequentially along a direction away from the substrate; wherein the N-type epitaxial layer includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, and the transparent conductive layer are stacked sequentially on the second step; a first electrode and a second electrode; the first electrode is formed on the first step; the second electrode is formed on the surface of the transparent conductive layer;

[0008] A color conversion layer and a first reflective mirror layer; the color conversion layer is distributed on the side of the N-type epitaxial layer near the substrate, the sidewall of the first LED chip structure, and the surface of the transparent conductive layer, and exposes the first electrode and the second electrode; the first reflective mirror layer covers the color conversion layer; the first reflective mirror layer is used to transmit red light and reflect other colors of light.

[0009] Optionally, the thickness of the color conversion layer is 1µm-4µm.

[0010] Optionally, the color conversion layer is a red color conversion layer.

[0011] Optionally, the first reflector layer is a metal reflector or a DBR reflector.

[0012] Optionally, the material of the first reflective mirror layer is a combination of titanium oxide and silicon oxide, or a combination of silicon oxide and silicon nitride.

[0013] According to a second aspect of the present invention, a flip-chip LED is provided, comprising:

[0014] Transparent substrate;

[0015] The second LED chip structure includes: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, a transparent conductive layer, a second reflective layer, a first electrode, and a second electrode, stacked sequentially along a direction away from the transparent substrate; wherein, the N-type epitaxial layer includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, the transparent conductive layer, and the second reflective layer are sequentially stacked on the second step; the first electrode is formed on the first step; and the second electrode is formed on the surface of the second reflective layer;

[0016] A third reflective mirror layer and a first color conversion layer; the first color conversion layer is distributed on the side of the N-type epitaxial layer near the transparent substrate; the third reflective mirror layer is formed between the first color conversion layer and the transparent substrate; wherein, the third reflective mirror layer is used to transmit red light and reflect other colors of light.

[0017] Optionally, the third reflective layer also covers the sidewalls of the second LED chip structure.

[0018] Optionally, the flip-chip further includes: a second color conversion layer; the second color conversion layer is formed on the sidewall of the first LED chip structure;

[0019] The third reflective mirror layer on the sidewall of the second LED chip structure covers the surface of the second color conversion layer.

[0020] According to a third aspect of the present invention, a MIP chip structure is provided, comprising:

[0021] A transparent substrate; the transparent substrate is divided into independently distributed red light regions, green light regions, and blue light regions;

[0022] A plurality of third reflective mirror layers are formed in the red light region and the green light region, respectively; and a first red color conversion layer and a first green color conversion layer are formed on the surface of the third reflective mirror layers in the red light region and the green light region, respectively.

[0023] A first flip-chip LED structure, a second flip-chip LED structure, and a third flip-chip LED structure are respectively formed in the first red color conversion layer, the first green color conversion layer, and the blue light region; wherein each of the first flip-chip LED structure, the second flip-chip LED structure, and the third flip-chip LED structure comprises:

[0024] An N-type epitaxial layer, a quantum well emitting layer, a P-type epitaxial layer, a transparent conductive layer, a second reflective layer, a first electrode, and a second electrode are sequentially stacked along a direction away from the transparent substrate; wherein, the N-type epitaxial layer includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well emitting layer, the P-type epitaxial layer, the transparent conductive layer, and the second reflective layer are sequentially stacked on the second step; the first electrode is formed on the first step; the second electrode is formed on the surface of the second reflective layer;

[0025] The third reflective mirror layer is also formed on the first flip-chip LED structure and the second flip-chip LED structure;

[0026] The third reflective mirror layer is used to transmit red and green light and reflect blue light.

[0027] Optionally, the MIP chip structure further includes:

[0028] A second red color conversion layer and a second green color conversion layer; the second red color conversion layer and the second green color conversion layer are respectively formed on the first flip-chip LED structure and the second flip-chip LED structure;

[0029] The third reflector layer on the first flip-chip LED structure and the second flip-chip LED structure covers the surfaces of the second red color conversion layer and the second green color conversion layer.

[0030] Optionally, the MIP chip structure further includes a first metal bridge and a first metal pillar;

[0031] The transparent substrate further includes a first PAD region; the first metal pillar is formed in the first PAD region;

[0032] The first metal bridge is formed on a transparent substrate between the first flip-chip LED structure, the second flip-chip LED structure and the third flip-chip LED structure and extends to the N-type epitaxial layer on the first flip-chip LED structure, the second flip-chip LED structure and the third flip-chip LED structure, and connects to the first metal pillar to form a common cathode structure.

[0033] According to a fourth aspect of the present invention, a vertical LED chip is provided, comprising:

[0034] Conductive substrate;

[0035] The second LED chip structure includes: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, a transparent conductive layer, a second reflective layer, a first electrode, and a second electrode, stacked sequentially along a direction away from the conductive substrate; wherein, the N-type epitaxial layer includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, the transparent conductive layer, and the second reflective layer are sequentially stacked on the second step; the first electrode is formed on the first step; and the second electrode is formed on the surface of the second reflective layer;

[0036] The third reflective mirror layer and the first color conversion layer; the first color conversion layer is distributed on the side of the N-type epitaxial layer near the conductive substrate; the third reflective mirror layer covers the first color conversion layer and the sidewall of the second LED chip structure.

[0037] Optionally, the vertical LED chip further includes a first connecting metal layer, which is connected between the first electrode and the conductive substrate.

[0038] According to a fifth aspect of the present invention, a method for manufacturing a standard-mount LED chip is provided, for manufacturing the standard-mount LED chip according to any one of the first aspects of the present invention, comprising:

[0039] A substrate, a first LED chip structure, and a temporary substrate are provided; wherein the first LED chip structure is formed on the temporary substrate;

[0040] A first reflective mirror layer and a first color conversion layer are formed covering the N-type epitaxial layer on the side near the substrate; the first reflective mirror layer and the first color conversion layer covering the N-type epitaxial layer on the side near the substrate are stacked sequentially on the substrate in a direction away from the substrate;

[0041] The first LED chip structure is transferred to the surface of the first color conversion layer, and the temporary substrate is peeled off;

[0042] A third color conversion layer is formed; the third color conversion layer is distributed on the sidewall of the first LED chip structure and on the surface of the transparent conductive layer, and exposes the first electrode and the second electrode; the color conversion layer includes the first color conversion layer and the third color conversion layer;

[0043] The first reflective layer is formed to cover the sidewalls of the first LED chip structure and the surface of the transparent conductive layer.

[0044] Optionally, the first color conversion layer or the third color conversion layer may be formed by immersion or spin coating.

[0045] Optionally, the first reflective mirror layer may be formed by sputtering or vapor deposition.

[0046] According to a sixth aspect of the present invention, a method for manufacturing a flip-chip LED is provided, for manufacturing the flip-chip LED according to any one of the second aspects of the present invention, comprising:

[0047] A transparent substrate, a second LED chip structure, and a temporary substrate are provided; wherein the second LED chip structure is formed on the temporary substrate;

[0048] The third reflective mirror layer and the first color conversion layer are formed; the third reflective mirror layer and the first color conversion layer are stacked sequentially on the transparent substrate in a direction away from the transparent substrate;

[0049] The first LED chip structure is transferred to the surface of the first color conversion layer, and the temporary substrate is peeled off.

[0050] Optionally, after transferring the first LED chip structure to the surface of the first color conversion layer and peeling off the temporary substrate, the method further includes:

[0051] The third reflective layer is formed on the surface of the sidewall of the second LED chip structure.

[0052] Optionally, before forming the third reflective layer on the surface covering the sidewalls of the second LED chip structure, the method further includes:

[0053] A second color conversion layer is formed; the second color conversion layer is formed on the sidewall of the second LED chip structure; wherein, the third reflective layer covering the surface of the sidewall of the second LED chip structure covers the surface of the second color conversion layer.

[0054] According to a seventh aspect of the present invention, a method for manufacturing a vertical LED chip is provided, for manufacturing the vertical LED chip according to any one of the fourth aspects of the present invention, comprising:

[0055] A conductive substrate, a second LED chip structure, and a temporary substrate are provided; wherein the second LED chip structure is formed on the temporary substrate;

[0056] A first reflective mirror layer and a first color conversion layer are formed to cover the first color conversion layer; the third reflective mirror layer and the first color conversion layer are stacked sequentially on the conductive substrate in a direction away from the conductive substrate;

[0057] The second LED chip structure is transferred to the surface of the first color conversion layer, and the temporary substrate is peeled off;

[0058] A third reflective layer is formed on the sidewall of the second LED chip structure, exposing the first electrode and the second electrode.

[0059] Optionally, after forming the third reflective mirror layer, the method further includes:

[0060] The first metal connection layer is formed; the first metal connection layer is connected to the first electrode and the conductive substrate.

[0061] According to an eighth aspect of the present invention, an electronic device is provided, comprising a standard LED chip as described in any of the first aspects of the present invention, or / and a flip LED chip as described in any of the second aspects of the present invention, or / and a MIP chip structure as described in any of the third aspects of the present invention, or / and a vertical LED chip as described in any of the fourth aspects of the present invention.

[0062] According to a ninth aspect of the present invention, a method for manufacturing an electronic device is provided, comprising the method for manufacturing a standard LED chip as described in any of the fifth aspects of the present invention, or / and the method for manufacturing a flip-chip LED as described in any of the sixth aspects of the present invention, or / and the method for manufacturing a vertical LED chip as described in any of the seventh aspects of the present invention.

[0063] This invention provides a standard-mount LED chip. By setting a color conversion layer distributed on the side of the N-type epitaxial layer near the substrate, the sidewall of the first LED chip structure, and the surface of the transparent conductive layer, it ensures that the light beam generated from the LED chip structure first excites the color conversion layer on the surface before exiting the LED chip. Compared with the prior art, this increases the excitation efficiency of blue light. At the same time, a first reflective mirror layer is covered on the surface of the color conversion layer, so that all blue light is reflected into the chip and does not transmit outward, thereby achieving a better effect of preventing blue light leakage and making the light emitted from each light-emitting side of the LED chip more uniform. This solves the problems of low color conversion efficiency and blue light leakage in the prior art of standard-mount LED chips, thereby increasing the brightness of the standard-mount LED chip.

[0064] Furthermore, the present invention also provides a MIP chip structure, which is formed by combining a first flip-chip LED structure, a second flip-chip LED structure, and a third flip-chip LED structure. The third reflective mirror layer is formed in both the red light region and the green light region. A first red color conversion layer and a first green color conversion layer are formed on the surface of the third reflective mirror layer, respectively. The third reflective mirror layer is also formed on the first flip-chip LED structure and the second flip-chip LED structure. Therefore, the technical solution provided by the present invention, by setting the first and second flip-chip LED structures to be similar to the flip-chip LED structure provided by the present invention, ensures that all blue light is reflected within the chip and does not transmit outwards, thereby achieving a better effect in preventing blue light leakage. This solves the problems of low color conversion efficiency and blue light leakage in the prior art of MIP chip structures, thereby increasing the light output brightness of the MIP chip structure. Attached Figure Description

[0065] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0066] Figure 1 This is a schematic diagram of the structure of a standard-mounted LED chip provided in an embodiment of the present invention;

[0067] Figure 2 This is a schematic diagram of the structure of a flip-chip LED provided in a specific embodiment of the present invention;

[0068] Figure 3 This is a schematic diagram of the structure of a flip-chip LED provided in another specific embodiment of the present invention;

[0069] Figure 4 This is a schematic diagram of the structure of a vertical LED chip provided in an embodiment of the present invention;

[0070] Figure 5 This is a schematic diagram of a MIP chip structure provided in an embodiment of the present invention;

[0071] Figure 6 This is a flowchart illustrating a method for manufacturing a standard LED chip according to an embodiment of the present invention;

[0072] Figure 7 This is a flowchart illustrating a method for fabricating a flip-chip LED according to an embodiment of the present invention.

[0073] Figure 8This is a schematic flowchart of a method for manufacturing a vertical LED chip according to an embodiment of the present invention;

[0074] Figure 9 This is a schematic diagram of different process stages of LED chip fabrication according to a method for manufacturing upright, flip-chip, or vertical LED chips, provided in an embodiment of the present invention.

[0075] Figure 10 This is a schematic diagram of different process stages according to a specific embodiment of the present invention for manufacturing a flip-chip LED;

[0076] Figure 11 This is a schematic diagram of different process stages according to another specific embodiment of the present invention;

[0077] Figure 12 This is a schematic diagram of different process stages according to the vertical LED chip fabrication method provided in an embodiment of the present invention;

[0078] Explanation of reference numerals in the attached figures:

[0079] 101-Substrate;

[0080] 102-N type epitaxial layer;

[0081] 103-Quantum well light-emitting layer;

[0082] 104-P type epitaxial layer;

[0083] 105 - Transparent conductive layer;

[0084] 106 - First electrode;

[0085] 107 - Second electrode;

[0086] 108-color conversion layer;

[0087] 109 - First reflecting mirror layer;

[0088] 110 - Third reflecting mirror layer;

[0089] 112 - First color conversion layer;

[0090] 113 - Second reflector layer;

[0091] 114 - Second color conversion layer;

[0092] 115 - First metal bonding layer;

[0093] 116 - Transparent substrate;

[0094] 1-Transparent substrate;

[0095] 2-First metal column;

[0096] 3-Red light region;

[0097] 4-Blue light area;

[0098] 5-Green light area;

[0099] 6-First metal bridge. Detailed Implementation

[0100] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0101] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0102] Currently, red LED chips are a pain point in the industry. Due to the size effect of materials, the brightness of LED chip products decreases significantly as the size of the product material decreases. For example, when converting blue light to red light, the unencapsulated surface in the LED device will cause blue light leakage, resulting in impure light color emitted by the device. Moreover, InGaN red light technology suffers from low overall conversion efficiency and difficulty in controlling yield due to the easy decomposition of In during high-temperature growth. It cannot meet the commercialization requirements of MicroLED chips.

[0103] In view of this, the inventors of this application discovered through repeated experiments that by covering the light-emitting surface and sidewalls of the LED chip structure with a DBR reflector, the effect of only the color conversion layer transmitting light outward can be achieved using the DBR reflector, so that all blue light is reflected into the chip and does not transmit light outward, thereby achieving a better effect of preventing blue light leakage. At the same time, by making a color conversion layer on other light-emitting surfaces in the LED chip other than the main light-emitting surface, the light emission efficiency of the color conversion layer is fully stimulated, thereby improving the brightness of the LED chip.

[0104] It is evident that the technical solution provided in this application can achieve higher excitation efficiency and solve the problem of light leakage in the product.

[0105] The technical solution of the present invention will be described in detail below with reference to specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0106] Please refer to Figures 1-12 The quantum well light-emitting layers provided by this invention are all blue light-emitting layers, and the reflector layers are all used to transmit red light and reflect other colors of light.

[0107] According to an embodiment of the present invention, a standard-mount LED chip is provided, comprising:

[0108] Substrate 101;

[0109] A first LED chip structure includes: an N-type epitaxial layer 102, a quantum well light-emitting layer 103, a P-type epitaxial layer 104, and a transparent conductive layer 105, stacked sequentially along a direction away from the substrate 101; wherein, the N-type epitaxial layer 102 includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer 103, the P-type epitaxial layer 104, and the transparent conductive layer 105 are stacked sequentially on the second step; a first electrode 106 and a second electrode 107; the first electrode 106 is formed on the first step; the second electrode 107 is formed on the surface of the transparent conductive layer 105;

[0110] A color conversion layer 108 and a first reflective mirror layer 109 are included. The color conversion layer 108 is distributed on the side of the N-type epitaxial layer 102 near the substrate 101, the sidewall of the first LED chip structure, and the surface of the transparent conductive layer 105, exposing the first electrode 106 and the second electrode 107. The first reflective mirror layer 109 covers the color conversion layer 108. A positively mounted LED chip is shown below. Figure 1 As shown.

[0111] This invention provides a standard-mount LED chip. By incorporating a color conversion layer distributed on the side of the N-type epitaxial layer near the substrate, the sidewall of the first LED chip structure, and the surface of the transparent conductive layer, it ensures that the light beam generated from the LED chip structure is excited by the surface-mounted color conversion layer before exiting the LED chip. Compared with the prior art, this increases the excitation efficiency of blue light. Simultaneously, a first reflective mirror layer covers the surface of the color conversion layer, causing all blue light to be reflected within the chip and not transmitted outwards. This achieves better prevention of blue light leakage and makes the light emitted from each light-emitting side of the LED chip more uniform. Therefore, the technical solution provided by this invention, by incorporating a color conversion layer and a first reflective mirror layer in the first LED chip structure, solves the problems of low color conversion efficiency and blue light leakage in standard-mount LED chips in the prior art, thereby increasing the brightness of the standard-mount LED chip.

[0112] In one embodiment, the thickness of the color conversion layer 108 is 1µm-4µm.

[0113] In one embodiment, the color conversion layer 108 is a red color conversion layer 108, a yellow color conversion layer 108, or a green color conversion layer 108.

[0114] Currently, red LED chips are a pain point in the industry. Due to the size effect of materials, the brightness of LED chip products decreases significantly as the size of the product material decreases. Moreover, InGaN red light technology suffers from low overall conversion efficiency and difficulty in controlling yield due to the easy decomposition of In during high-temperature growth. It cannot meet the commercialization needs of MicroLED chips.

[0115] In one embodiment of the present invention, it is specifically proposed that the color conversion layer 108 is a red color conversion layer 108.

[0116] In the technical solution provided in this embodiment, since the red conversion layer 108 is distributed on the side of the N-type epitaxial layer 102 near the substrate 101, the sidewall of the first LED chip structure, and the surface of the transparent conductive layer 105, the upright LED chip achieves 360° full wrapping of the red color conversion layer 108 around the first LED chip structure, solving the problem of red light leakage in LED chip products and achieving higher red light excitation efficiency.

[0117] In other embodiments, the color conversion layer 108 can also be a yellow color conversion layer 108 or a red color conversion layer 108. This solves the problem of light leakage in yellow or green light from LED chip products, respectively, and achieves higher excitation efficiency for yellow or green light.

[0118] In one embodiment, the first reflector layer 109 is a metal reflector or a DBR reflector.

[0119] In one embodiment, the material of the first reflective mirror layer 109 is a combination of titanium oxide and silicon oxide, or a combination of silicon oxide and silicon nitride.

[0120] According to one embodiment of the present invention, a flip-chip LED is also provided, comprising:

[0121] Transparent substrate 116;

[0122] The second LED chip structure includes: an N-type epitaxial layer 102, a quantum well light-emitting layer 103, a P-type epitaxial layer 104, a transparent conductive layer 105, a second reflective layer 113, a first electrode 106, and a second electrode 107, stacked sequentially along a direction away from the transparent substrate 116; wherein, the N-type epitaxial layer 102 includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer 103, the P-type epitaxial layer 104, the transparent conductive layer 105, and the second reflective layer 113 are sequentially stacked on the second step; the first electrode 106 is formed on the first step; and the second electrode 107 is formed on the surface of the second reflective layer 113;

[0123] A third reflective mirror layer 110 and a first color conversion layer 112; the first color conversion layer 112 is distributed on the side of the N-type epitaxial layer 102 near the transparent substrate 116; the third reflective mirror layer 110 is formed between the first color conversion layer 112 and the transparent substrate 116; wherein, the third reflective mirror layer 110 is used to transmit red light and reflect other colors of light.

[0124] This invention provides a flip-chip LED by setting a first color conversion layer distributed on the side of the N-type epitaxial layer closest to the transparent substrate; simultaneously, a third reflective layer is covered on the first color conversion layer, so that blue light is reflected into the chip and does not transmit outward, thereby achieving a better effect of preventing blue light leakage and realizing a more uniform light emission from each light-emitting side of the LED chip. It can be seen that the technical solution provided by this invention, by setting a first color conversion layer and a third reflective layer in the second LED chip structure, solves the problems of low color conversion efficiency and blue light leakage in existing flip-chip LEDs, thereby increasing the light output brightness of the flip-chip LED.

[0125] In one embodiment, the third reflective mirror layer 110 is formed only between the first color conversion layer 112 and the transparent substrate 116 (not shown in the figure).

[0126] In another embodiment, the third reflective layer also covers the sidewalls of the second LED chip structure, such as... Figure 2 As shown.

[0127] In the technical solution provided in this embodiment, the third reflective mirror layer also covers the sidewall and bottom of the second LED chip structure, so that the blue light is reflected inside the chip and does not transmit light outward, thereby achieving a better effect of preventing blue light leakage.

[0128] In one embodiment, the flip-chip further includes: a second color conversion layer; the second color conversion layer is formed on the sidewall of the first LED chip structure; wherein the third reflective layer of the sidewall of the second LED chip structure covers the surface of the second color conversion layer.

[0129] In one embodiment, when the third reflective layer also covers the sidewall of the second LED chip structure, the second color conversion layer is formed on the sidewall of the first LED chip structure, and the third reflective layer of the sidewall covers the surface of the second color conversion layer.

[0130] This specific embodiment provides a flip-chip LED. On one hand, by setting a first color conversion layer distributed on the side of the N-type epitaxial layer near the substrate, and simultaneously setting a second color conversion layer on the sidewall of the first LED chip structure, it is ensured that the light beam generated from the flip-chip LED structure first excites the second color conversion layer on the surface before exiting the flip-chip LED, thereby increasing the excitation efficiency of blue light compared to the prior art. On the other hand, a reflective mirror layer is covered on the surfaces of the second color conversion layer and the first color conversion layer, so that all blue light is reflected into the chip and does not transmit outward, thereby achieving a better effect of preventing blue light leakage and realizing a more uniform light emission effect from each light-emitting side of the LED chip. It can be seen that the technical solution provided by the present invention, by setting a first color conversion layer, a second color conversion layer and a third reflective mirror layer in the second LED chip structure, solves the problems of low color conversion efficiency and blue light leakage of flip-chip LEDs in the prior art, thereby increasing the light output brightness of the flip-chip LED.

[0131] In another embodiment, when the third reflective mirror layer is formed only between the first color conversion layer 112 and the transparent substrate 116, the second color conversion layer is formed on the sidewall of the first LED chip structure; a black protective layer is also formed on the surface of the second color conversion layer to prevent blue light leakage (not shown in the figure).

[0132] According to an embodiment of the present invention, a MIP chip structure is also provided, comprising:

[0133] Transparent substrate 1; the transparent substrate 1 is divided into independently distributed red light region 3, green light region 5 and blue light region 4;

[0134] A plurality of third reflector layers 110 are formed in the red light region 3 and the green light region 5, respectively; and a first red color conversion layer and a first green color conversion layer are formed on the surfaces of the third reflector layers 110 in the red light region 3 and the green light region 5, respectively; the third reflector layers 110 are used to transmit red and green light and reflect blue light; a first flip-chip LED structure, a second flip-chip LED structure, and a third flip-chip LED structure are formed in the first red color conversion layer, the first green color conversion layer, and the blue light region 4, respectively; wherein the first flip-chip LED structure, the second flip-chip LED structure, and the third flip-chip LED structure each include:

[0135] An N-type epitaxial layer 102, a quantum well light-emitting layer 103, a P-type epitaxial layer 104, a transparent conductive layer 105, a second reflective mirror layer 113, a first electrode 106, and a second electrode 107 are stacked sequentially along a direction away from the transparent substrate. The N-type epitaxial layer 102 includes a stepped structure, comprising a first step and a second step. The quantum well light-emitting layer 103, the P-type epitaxial layer 104, the transparent conductive layer 105, and the second reflective mirror layer 113 are sequentially stacked on the second step. The first electrode 106 is formed on the first step, and the second electrode 107 is formed on the surface of the second reflective mirror layer 113.

[0136] The third reflective mirror layer 110 is also formed on the first flip-chip LED structure and the second flip-chip LED structure, such as Figure 5 As shown.

[0137] This invention provides a MIP chip structure, which utilizes a combination of a first flip-chip LED structure, a second flip-chip LED structure, and a third flip-chip LED structure to form the MIP chip structure. In the first and second flip-chip LED structures, the red light region and the green light region are respectively formed. A third reflective layer is formed in both the red light region and the green light region. A first red color conversion layer and a first green color conversion layer are respectively formed on the surface of the third reflective layer. The third reflective layer is also formed on the sidewalls of the first and second flip-chip LED structures. Thus, by combining the first flip-chip LED... The structure of the first flip-chip and the second flip-chip are configured similarly to the flip-chip provided in the previous embodiment, so that all blue light is reflected inside the chip and does not transmit outward, thereby achieving a better effect in preventing blue light leakage. It can be seen that the technical solution provided by the present invention, by setting a first flip-chip structure and a second flip-chip similar to the flip-chip provided in the previous embodiment in the MIP chip structure, wherein the first flip-chip structure and the second flip-chip are used to emit red light and green light respectively, solves the problems of low color conversion efficiency and blue light leakage in the existing MIP chip structure, thereby increasing the light output brightness of the MIP chip structure.

[0138] In one embodiment, the MIP chip structure further includes:

[0139] A second red color conversion layer and a second green color conversion layer; the second red color conversion layer and the second green color conversion layer are respectively formed on the first flip-chip LED structure and the second flip-chip LED structure;

[0140] The third reflector layer on the first flip-chip LED structure and the second flip-chip LED structure covers the surfaces of the second red color conversion layer and the second green color conversion layer.

[0141] The present invention provides a MIP chip structure, which, on the one hand, ensures that the light beam generated from the first flip LED chip structure or the second flip LED chip structure is excited by the second color conversion layer on the surface before exiting the flip LED chip, by setting a second red color conversion layer and a second green color conversion layer respectively formed on the sidewalls of the first flip LED chip structure and the second flip LED chip structure, thereby increasing the blue light excitation efficiency compared with the prior art.

[0142] On the other hand, the surfaces of the first red color conversion layer and the first green color conversion layer, as well as the surfaces of the second red color conversion layer and the second green color conversion layer, are covered with a third reflective layer, so that all blue light is reflected inside the chip and does not transmit outward, thereby achieving a better effect in preventing blue light leakage and making the light emitted from each light-emitting side of the flip-chip structure more uniform. It can be seen that the technical solution provided by the present invention, by setting a second red color conversion layer, a second green color conversion layer, a second red color conversion layer, a second green color conversion layer, and a third reflective layer in the flip-chip structure, solves the problems of low color conversion efficiency and blue light leakage in the existing MIP chip structure, thereby increasing the light output brightness of the MIP chip structure.

[0143] In one embodiment, the MIP chip structure further includes a first metal bridge 6 and a first metal pillar 2;

[0144] The transparent substrate 1 further includes a first PAD region; the first metal pillar 2 is formed in the first PAD region;

[0145] The first metal bridge 6 is formed on the transparent substrate 1 between the first flip-chip LED structure, the second flip-chip LED structure and the third flip-chip LED structure and extends to the N-type epitaxial layer 102 on the first flip-chip LED structure, the second flip-chip LED structure and the third flip-chip LED structure, and connects to the first metal pillar 2 to form a common cathode structure.

[0146] In one embodiment, the first metal bridge 6 may be formed between devices in regions 2 and 3, between devices in regions 2 and 5, and between devices in regions 4 and 5, such as... Figure 5 As shown;

[0147] In another embodiment, the first metal bridge 6 may be formed between the devices in regions 2 and 3, between the devices in regions 2 and 5, between the devices in regions 4 and 5, and between the devices in regions 3 and 4.

[0148] Secondly, according to an embodiment of the present invention, a vertical LED chip is also provided, comprising:

[0149] Conductive substrate 101;

[0150] The second LED chip structure includes: an N-type epitaxial layer 102, a quantum well light-emitting layer 103, a P-type epitaxial layer 104, a transparent conductive layer 105, a second reflective layer 113, a first electrode 106, and a second electrode 107, stacked sequentially along a direction away from the conductive substrate 101; wherein, the N-type epitaxial layer 102 includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer 103, the P-type epitaxial layer 104, the transparent conductive layer 105, and the second reflective layer 113 are sequentially stacked on the second step; the first electrode 106 is formed on the first step; and the second electrode 107 is formed on the surface of the second reflective layer 113;

[0151] The third reflective mirror layer 110 and the first color conversion layer 112; the first color conversion layer 112 is distributed on the side of the N-type epitaxial layer 102 near the conductive substrate 101; the third reflective mirror layer 110 covers the first color conversion layer 112 and the sidewall of the second LED chip structure, such as Figure 4 As shown.

[0152] This invention provides a vertical LED chip. By setting a first color conversion layer distributed on the side of the N-type epitaxial layer near the conductive substrate, and simultaneously covering the first color conversion layer and the sidewall of the second LED chip structure with a third reflective mirror layer, all blue light is reflected into the chip and does not transmit outward, thereby achieving a better effect of preventing blue light leakage and realizing a more uniform light emission from each light-emitting side of the LED chip. It can be seen that the technical solution provided by this invention, by setting a first color conversion layer and a third reflective mirror layer in the second LED chip structure, solves the problems of low color conversion efficiency and blue light leakage in existing vertical LED chips, thereby increasing the light output brightness of the vertical LED chip.

[0153] In one embodiment, the vertical LED chip further includes a first connecting metal layer, which is connected between the first electrode and the conductive substrate.

[0154] Furthermore, according to an embodiment of the present invention, a method for manufacturing a positive-mounted LED chip is also provided, for manufacturing the positive-mounted LED chip described in any of the foregoing embodiments of the present invention. A flowchart illustrating the method for manufacturing the positive-mounted LED chip is shown below. Figure 6 As shown, the manufacturing method includes:

[0155] S11: Provide the substrate 101, the first LED chip structure, and a temporary substrate; wherein the first LED chip structure is formed on the temporary substrate; as shown. Figure 9 As shown;

[0156] S12: Form a first reflective mirror layer 109 covering the N-type epitaxial layer 102 near the substrate 101, and a first color conversion layer 108112; the first reflective mirror layer 109 covering the N-type epitaxial layer 102 near the substrate 101 and the first color conversion layer 108112 are sequentially stacked on the substrate 101 in a direction away from the substrate 101;

[0157] S13: Transfer the first LED chip structure to the surface of the first color conversion layer 108112 and peel off the temporary substrate;

[0158] S14: Form a third color conversion layer 108; the third color conversion layer 108 is distributed on the sidewall of the first LED chip structure and the surface of the transparent conductive layer 105, and exposes the first electrode 106 and the second electrode 107; the color conversion layer 108 includes the first color conversion layer 108112 and the third color conversion layer 108.

[0159] S15: Forming the first reflective mirror layer 109 covering the sidewalls of the first LED chip structure and the surface of the transparent conductive layer 105; as shown in the example. Figure 1 As shown.

[0160] The method for manufacturing a standard LED chip provided by the present invention solves the problems of low color conversion efficiency and blue light leakage in the prior art by forming a color conversion layer and a first reflective mirror layer in the first LED chip structure, thereby increasing the light output brightness of the standard LED chip.

[0161] In one embodiment, the first color conversion layer 108112 or the third color conversion layer 108 is formed by immersion or spin coating.

[0162] In one embodiment, the first reflective mirror layer 109 is formed by sputtering or vapor deposition.

[0163] According to one embodiment of the present invention, a method for fabricating a flip-chip LED is also provided, for fabricating the flip-chip LED described in any of the foregoing embodiments of the present invention. The method for fabricating the flip-chip LED is as follows: Figure 7 As shown, the manufacturing method includes:

[0164] S21: Provide the transparent substrate 116, the second LED chip structure, and a temporary substrate; wherein the second LED chip structure is formed on the temporary substrate;

[0165] S22: Form the third reflective mirror layer 110 and the first color conversion layer 112; the third reflective mirror layer 110 and the first color conversion layer 112 are sequentially stacked on the transparent substrate 116 in a direction away from the transparent substrate 116;

[0166] S23: Transfer the first LED chip structure to the surface of the first color conversion layer 112 and peel off the temporary substrate (not shown in the figure).

[0167] The method for manufacturing flip-chip LEDs provided by this invention solves the problems of low color conversion efficiency and blue light leakage in existing flip-chip LEDs by forming a first color conversion layer and a third reflector layer in the second LED chip structure, thereby increasing the light output brightness of the flip-chip LED.

[0168] After transferring the first LED chip structure to the surface of the first color conversion layer and peeling off the temporary substrate, the process further includes:

[0169] S24: Forming the third reflective layer 110 covering the surface of the sidewalls of the second LED chip structure; as shown Figure 10 As shown.

[0170] After forming the third reflective layer 110 covering the surface of the sidewalls of the second LED chip structure, the method further includes: partitioning the transparent substrate 116 to form a plurality of flip-chip LEDs; the device structure after partitioning is as follows: Figure 2 As shown;

[0171] In one embodiment, before forming the third reflective layer 110 covering the surface of the sidewall of the second LED chip structure, the method further includes:

[0172] A second color conversion layer 114 is formed; the second color conversion layer 114 is formed on the sidewall of the second LED chip structure; wherein, the third reflective mirror layer 110, which covers the surface of the sidewall of the second LED chip structure, covers the surface of the second color conversion layer 114; as... Figure 11 As shown.

[0173] The technical solution provided in this specific embodiment solves the problems of low color conversion efficiency and blue light leakage of flip-chip LEDs in the prior art by forming a first color conversion layer, a second color conversion layer and a third reflector layer in the second LED chip structure, thereby increasing the light output brightness of the flip-chip LED.

[0174] In another embodiment, in step S23, after transferring the first LED chip structure to the surface of the first color conversion layer and peeling off the temporary substrate, without fabricating a third reflective layer covering the side of the first LED chip structure, and thus forming the second color conversion layer 114 on the sidewall of the second LED chip structure, a black protective layer is then applied to the surface of the second color conversion layer 114 to prevent blue light leakage. According to an embodiment of the present invention, a method for fabricating a vertical LED chip is also provided, for fabricating the vertical LED chip described in any of the foregoing embodiments of the present invention. The method for fabricating the vertical LED chip is as follows: Figure 8 As shown, the manufacturing method includes:

[0175] S31: Provide a conductive substrate 101, the second LED chip structure, and a temporary substrate; wherein the second LED chip structure is formed on the temporary substrate;

[0176] S32: Form the first reflective mirror layer 109 and the first color conversion layer 112 covering the first color conversion layer 112; the third reflective mirror layer 110 and the first color conversion layer 112 are stacked sequentially on the conductive substrate 101 in a direction away from the conductive substrate 101;

[0177] S33: Transfer the second LED chip structure to the surface of the first color conversion layer 112 and peel off the temporary substrate;

[0178] S34: Form the third reflective layer 110 on the sidewall covering the second LED chip structure, and expose the first electrode 106 and the second electrode 107; Figure 12 As shown.

[0179] The present invention provides a method for manufacturing a vertical LED chip, which solves the problems of low color conversion efficiency and blue light leakage in existing vertical LED chips by forming a first color conversion layer and a third reflector layer in a second LED chip structure, thereby increasing the light output brightness of the vertical LED chip.

[0180] After forming the third reflective mirror layer 110 covering the sidewall of the second LED chip structure, the method further includes: isolating the conductive substrate 101 to form a plurality of flip-chip LEDs; the device structure after isolation is as follows: Figure 4 As shown;

[0181] In one embodiment, after forming the third reflective mirror layer 110, the method further includes:

[0182] The first metal connection layer 115 is formed; the first metal connection layer 115 is connected to the first electrode 106 and the conductive substrate 101.

[0183] According to an embodiment of the present invention, a method for fabricating a MIP chip structure is also provided, comprising:

[0184] S41: Provide a transparent substrate 1; the transparent substrate 1 is divided into a red light region 3, a green light region 5 and a blue light region 4 that are independently distributed;

[0185] S42: A plurality of third reflective mirror layers 110 are formed on the red light region 3 and the green light region 5 respectively; and a first red color conversion layer and a first green color conversion layer are formed on the surface of the third reflective mirror layer 110 in the red light region 3 and the green light region 5 respectively.

[0186] S43: A temporary substrate, a first flip-chip LED structure, a second flip-chip LED structure, and a third flip-chip LED structure are provided; the first flip-chip LED structure, the second flip-chip LED structure, and the third flip-chip LED structure are formed in different regions on the temporary substrate and are adapted to the positions of the red light region 3, the green light region 5, and the blue light region 4; the sidewalls of the first flip-chip LED structure and the second flip-chip LED structure are covered with a third reflective layer;

[0187] S44: The first flip-chip LED structure, the second flip-chip LED structure, and the third flip-chip LED structure are respectively transferred to the first red color conversion layer, the first green color conversion layer, and the blue light region 4 to form a MIP chip structure.

[0188] The second red color conversion layer and the second green color conversion layer are also formed on the sidewalls of the first flip-chip LED structure and the second flip-chip LED structure; the sidewalls of the first flip-chip LED structure and the second flip-chip LED structure are both covered by a third reflective layer, which respectively covers the second red color conversion layer and the second green color conversion layer;

[0189] Step S44, after transferring the first flip-chip LED structure, the second flip-chip LED structure, and the third flip-chip LED structure to the first red color conversion layer, the first green color conversion layer, and the blue light region 4 respectively, further includes:

[0190] The first metal bridge 6 and the first metal pillar 2 are formed.

[0191] It can be seen that the method for manufacturing the MIP chip structure provided by the present invention, by setting a flip-chip similar to the one provided in the foregoing embodiment in the MIP chip structure: a first flip-chip structure and a second flip-chip, wherein the first flip-chip structure and the second flip-chip are used to emit red light and green light respectively, solves the problems of low color conversion efficiency and blue light leakage in the MIP chip structure in the prior art, thereby increasing the light output brightness of the MIP chip structure.

[0192] According to one embodiment of the present invention, an electronic device is also provided, including a standard LED chip as described in any of the foregoing embodiments of the present invention, or / and a flip LED chip as described in any of the foregoing embodiments of the present invention, or / and a MIP chip structure as described in any of the foregoing embodiments of the present invention, or / and a vertical LED chip as described in any of the foregoing embodiments of the present invention.

[0193] According to one embodiment of the present invention, a method for manufacturing an electronic device is also provided, including the method for manufacturing a standard LED chip as described in any of the foregoing embodiments of the present invention, or / and the method for manufacturing a flip-chip LED as described in any of the foregoing embodiments of the present invention, or / and the method for manufacturing a vertical LED chip as described in any of the foregoing embodiments of the present invention.

[0194] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A standard-mount LED chip, characterized in that, include: Substrate; First LED chip structure; The first LED chip structure includes: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, and a transparent conductive layer stacked sequentially along a direction away from the substrate; wherein, the N-type epitaxial layer includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, and the transparent conductive layer are stacked sequentially on the second step; a first electrode and a second electrode; the first electrode is formed on the first step; the second electrode is formed on the surface of the transparent conductive layer; A color conversion layer and a first reflective mirror layer; the color conversion layer is distributed on the side of the N-type epitaxial layer near the substrate, the sidewall of the first LED chip structure, and the surface of the transparent conductive layer, and exposes the first electrode and the second electrode; the first reflective mirror layer covers the color conversion layer, the first reflective mirror layer is used to transmit red light and reflect other colors of light, and the color conversion layer is located between the first reflective mirror layer and the transparent substrate.

2. The upright LED chip according to claim 1, characterized in that, The thickness of the color conversion layer is 1µm-4µm.

3. The upright LED chip according to claim 2, characterized in that, The color conversion layer is a red color conversion layer.

4. The upright LED chip according to claim 3, characterized in that, The first reflector layer is a metal reflector or a DBR reflector.

5. The upright LED chip according to claim 4, characterized in that, The material of the first reflective mirror layer is a combination of titanium oxide and silicon oxide, or a combination of silicon oxide and silicon nitride.

6. A MIP chip structure, characterized in that, include: A transparent substrate is divided into independently distributed red light regions, green light regions, and blue light regions; a plurality of third reflective mirror layers are formed in the red light regions and the green light regions respectively; and a first red color conversion layer and a first green color conversion layer are formed on the surface of the third reflective mirror layers in the red light regions and the green light regions respectively; the third reflective mirror layers are used to transmit red light and green light and reflect blue light. The first flip-chip LED structure, the second flip-chip LED structure, and the third flip-chip LED structure are respectively formed in the first red color conversion layer, the first green color conversion layer, and the blue light region; The first, second, and third flip-chip LED structures each include: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, a transparent conductive layer, a second reflective layer, a first electrode, and a second electrode, stacked sequentially along a direction away from the transparent substrate; wherein, the N-type epitaxial layer includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, the transparent conductive layer, and the second reflective layer are stacked sequentially on the second step; the first electrode is formed on the first step; the second electrode is formed on the surface of the second reflective layer; and the third reflective layer is also formed on the sidewalls of the first and second flip-chip LED structures.

7. The MIP chip structure according to claim 6, characterized in that, The MIP chip structure further includes: a second red color conversion layer and a second green color conversion layer; the second red color conversion layer and the second green color conversion layer are respectively formed on the first flip-chip LED chip structure and the second flip-chip LED chip structure; the third reflector layer on the first flip-chip LED chip structure and the second flip-chip LED chip structure covers the surface of the second red color conversion layer and the second green color conversion layer.

8. The MIP chip structure according to claim 7, characterized in that, The MIP chip structure further includes a first metal bridge and a first metal pillar; the transparent substrate further includes a first PAD region; the first metal pillar is formed in the first PAD region; the first metal bridge is formed on the transparent substrate between the first flip-chip LED chip structure, the second flip-chip LED chip structure and the third flip-chip LED chip structure and extends to the N-type epitaxial layer on the first flip-chip LED chip structure, the second flip-chip LED chip structure and the third flip-chip LED chip structure, and connects to the first metal pillar to form a common cathode structure.

9. A vertical LED chip, characterized in that, include: Conductive substrate; The second LED chip structure includes: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, a transparent conductive layer, a second reflective layer, a first electrode, and a second electrode, stacked sequentially along a direction away from the conductive substrate; wherein, the N-type epitaxial layer includes a stepped structure; the stepped structure includes a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, the transparent conductive layer, and the second reflective layer are stacked sequentially on the second step; the first electrode is formed on the first step; the second electrode is formed on the surface of the second reflective layer; a third reflective layer and a first color conversion layer; the first color conversion layer is distributed on the side of the N-type epitaxial layer near the conductive substrate; the third reflective layer covers the first color conversion layer and the sidewalls of the second LED chip structure; the third reflective layer is used to transmit red light and reflect other colors of light; The vertical LED chip further includes a first metal connection layer, which connects the first electrode and the conductive substrate.

10. A method for manufacturing a standard-mount LED chip, used to manufacture the standard-mount LED chip according to any one of claims 1-5, characterized in that, include: A substrate, a first LED chip structure, and a temporary substrate are provided; wherein the first LED chip structure is formed on the temporary substrate; A first reflective layer and a first color conversion layer are formed, covering the N-type epitaxial layer near the substrate. The first reflective layer and the first color conversion layer, covering the N-type epitaxial layer near the substrate, are sequentially stacked on the substrate in a direction away from the substrate. The first LED chip structure is transferred to the surface of the first color conversion layer, and the temporary substrate is peeled off. A third color conversion layer is formed. The third color conversion layer is distributed on the sidewalls of the first LED chip structure and the surface of the transparent conductive layer, and exposes the first electrode and the second electrode. The color conversion layer includes the first color conversion layer and the third color conversion layer. The first reflective layer is formed covering the sidewalls of the first LED chip structure and the surface of the transparent conductive layer.

11. The method for manufacturing a standard-mount LED chip according to claim 10, characterized in that, The first color conversion layer or the third color conversion layer is formed by immersion or spin coating.

12. The method for manufacturing a standard-mount LED chip according to claim 11, characterized in that, The first reflective mirror layer is formed by sputtering or vapor deposition.

13. A method for manufacturing a vertical LED chip, used to manufacture the vertical LED chip of claim 9, characterized in that, include: A conductive substrate, a second LED chip structure, and a temporary substrate are provided; wherein the second LED chip structure is formed on the temporary substrate; a first reflective layer and the first color conversion layer are formed covering the first color conversion layer; the third reflective layer and the first color conversion layer are sequentially stacked on the conductive substrate in a direction away from the conductive substrate; the second LED chip structure is transferred to the surface of the first color conversion layer, and the temporary substrate is peeled off; the third reflective layer is formed on the sidewall of the second LED chip structure, exposing the first electrode and the second electrode.

14. The method for manufacturing a vertical LED chip according to claim 13, characterized in that, After forming the third reflective mirror layer, the process further includes: The first metal connection layer is formed; the first metal connection layer is connected to the first electrode and the conductive substrate.

15. An electronic device, characterized in that, Includes the upright LED chip as described in any one of claims 1-5, or / and the MIP chip structure as described in any one of claims 6-8, or / and the vertical LED chip as described in claim 9.

16. A method for manufacturing an electronic device, characterized in that, This includes the method for manufacturing a standard LED chip as described in any one of claims 10-12, or / and the method for manufacturing a vertical LED chip as described in any one of claims 13-14.

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