Perovskite solar cell and preparation method thereof

Abstract

The embodiment of the invention discloses a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a transparent electrode, an electron transport layer, a perovskite layer, a hole transport layer and a metal electrode which are stacked, one side, close to the electron transport layer, of the transparent electrode has a patterned structure; the transparent electrode side is a light incident side, and the patterned structure comprises a plurality of repetitive units; and the size of each repetitive unit or the gap between two adjacent repetitive units is an integral multiple of the cell parameter of the perovskite material in the perovskite layer. The light capturing area is increased, the light transmission path is optimized, the large-angle light can be utilized, and the reflection loss of the light is reduced; the crystal growth order is standardized by limiting the parameters of the patterned structure, the crystal quality of the perovskite thin film is improved, the crystal boundary is reduced, the carrier recombination loss caused by defects is reduced, the service life of carriers is prolonged, the carrier combination loss is reduced, and the photoelectric conversion efficiency of the perovskite solar cell is improved.

Description

Technical Field

[0001] The present application relates to the photovoltaic field, and specifically to a perovskite solar cell and a method for preparing the same. Background Art

[0002] Perovskite cell is a new type of solar cell. The basic structure of perovskite cell includes transparent electrode, hole transport layer, perovskite light absorption layer, electron transport layer and metal electrode.

[0003] Perovskite cells have become a research hotspot in the solar energy field due to their advantages such as high efficiency, low cost and easy preparation.

[0004] Light passes through the transparent electrode and shines on the perovskite light-absorbing layer, directly converting light energy into electrical energy through the photoelectric effect or photochemical reaction. In order to maximize the conversion rate of perovskite solar cells, on the one hand, it is necessary to develop the materials and crystal quality of perovskites, and on the other hand, it is also necessary to improve the transmittance of light penetrating each functional film layer or reduce the light loss during the propagation of the light path, so as to achieve the effect of improving the photoelectric conversion rate. Summary of the invention

[0005] The embodiment of the present application provides a perovskite solar cell and a preparation method thereof. By adjusting the surface structure of the transparent electrode close to the electron transport layer, the utilization rate of the perovskite solar cell for light at different angles is improved. The patterned surface makes the annealed perovskite crystal have fewer crystal interfaces, thereby improving the crystallization quality of the perovskite and the carrier transmission capacity.

[0006] The present application provides a perovskite solar cell, comprising:

[0007] A transparent electrode, an electron transport layer, a perovskite layer, a hole transport layer, and a metal electrode are stacked in sequence;

[0008] Wherein, the side of the transparent electrode close to the electron transport layer has a patterned structure; the transparent electrode side is the light incident side, and the patterned structure includes a plurality of repeating units;

[0009] The size of the repeating unit is an integer multiple of the unit cell parameter of the perovskite material in the perovskite layer; or

[0010] The gap between two adjacent repeating units is an integer multiple of the unit cell parameter of the perovskite material in the perovskite layer.

[0011] Preferably, the patterned structure comprises protrusions and / or grooves, the protrusions and the grooves have light refractive or reflective surfaces, and the refractive index of the transparent electrode is smaller than the refractive index of the electron transport layer.

[0012] Preferably, the patterned structure comprises the repeating units surrounded by protrusions, and the repeating units comprise regular polygons.

[0013] Preferably, the protrusions of the patterned structure include a dyke-like structure, the dyke-like structure has an inclined surface, an acute angle α is formed between the inclined surface and a horizontal plane of the transparent electrode, and 30°<α<70°.

[0014] Preferably, the size of the repeating unit, or the gap between two adjacent repeating units, ranges from 10 nm to 200 nm.

[0015] Preferably, the material of the electron transport layer includes an electron transport sublayer and a seed layer, wherein the material of the seed layer includes CsPbI3 or RbPbI3.

[0016] Preferably, the electron transport material comprises tin dioxide (SnO2), titanium dioxide (TiO2), zinc oxide (ZnO), [6,6]-phenyl C 61 Isomethyl butyrate (PC 61 BM) and fullerene (C 60 )

[0017] Preferably, the material of the transparent electrode includes one of indium zinc oxide (IZO), indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped tin oxide (AZO), indium tungsten oxide (IWO), and cesium indium oxide (ICO).

[0018] Preferably, the perovskite layer comprises a perovskite material, and the perovskite material comprises ABX3, wherein A comprises CH3NH3 + 、CH(NH2) 2+ 、CH(NH2)2 + , Cs + , Rb + At least one of, B includes Pb 2+ Sn 2+ ,Ge 2+ At least one of, X includes at least one of Cl, Br, and I.

[0019] A method for manufacturing a perovskite solar cell, comprising:

[0020] Providing a transparent electrode including a transparent insulating layer and a transparent conductive layer;

[0021] Providing a transparent electrode including a transparent insulating layer and a transparent conductive layer;

[0022] forming a patterned structure on the transparent conductive layer, wherein the patterned structure includes a plurality of repeating units;

[0023] forming an electron transport layer on the transparent electrode, wherein the material of the electron transport layer covers the surface of the transparent electrode;

[0024] A perovskite layer, a hole transport layer and a metal electrode are sequentially formed on the electron transport layer.

[0025] Beneficial Effects

[0026] The present invention provides a perovskite solar cell. By forming a patterned structure on a transparent electrode, the patterned structure matches the unit cell parameters of a perovskite material in a perovskite layer. On the one hand, a plurality of optical refraction / reflection surfaces can be provided, and the light path can be regulated in cooperation with different refractive indices of adjacent film layers, thereby increasing the light capture area, optimizing the light transmission path, making it possible to utilize light at a large angle, and reducing the reflection loss of the light. On the other hand, by limiting the parameters of the patterned structure, a side of the electron transport layer close to the perovskite layer has a velvet structure surface that conforms to the regularity of crystal growth, thereby improving the crystallization quality of the perovskite film, making the obtained crystal plane large and the crystal boundary less, reducing the carrier recombination loss caused by defects, increasing the carrier lifetime, and reducing the loss of carrier combination, thereby finally improving the photoelectric conversion efficiency of the perovskite solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 A structural diagram of a perovskite solar cell shown in one embodiment of the present application;

[0029] Figure 2 A partial film structure diagram of a perovskite solar cell shown in an embodiment of the present application;

[0030] Figure 3 A partial film structure diagram of a perovskite solar cell shown in another embodiment of the present application;

[0031] Figure 4 A partial film structure diagram of a perovskite solar cell shown in another embodiment of the present application;

[0032] Figure 5 for Figure 4 Schematic diagram of the cross-sectional structure along line A-A'. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.

[0034] The present application embodiment provides a perovskite solar cell and a method for making the same. The following is a detailed description. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels, and no numerical requirements or order is imposed. Various embodiments of the present invention may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and simplicity, and should not be understood as a rigid limitation on the scope of the present invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which are applicable regardless of the range. In addition, whenever a numerical range is indicated in this article, it is meant to include any quoted numbers (fractions or integers) within the indicated range.

[0035] The present application embodiment provides a perovskite solar cell, such as Figure 1-Figure 3 As shown, including:

[0036] A transparent electrode 10, an electron transport layer 20, a perovskite layer 30, a hole transport layer 40, and a metal electrode 50 are stacked in sequence;

[0037] Among them, Figure 2 As shown, the side of the transparent electrode 10 close to the electron transport layer 20 has a patterned structure; the side of the transparent electrode 30 is the light incident side, and the patterned structure includes a plurality of repeating units S;

[0038] The size of the repeating unit S is an integer multiple of the unit cell parameter of the perovskite material in the perovskite layer; or

[0039] The gap between two adjacent repeating units S is an integer multiple of the unit cell parameter of the perovskite material in the perovskite layer.

[0040] Specifically, the transparent electrode 10 includes a transparent insulating layer 101 and a transparent conductive layer 102. The size of the transparent electrode 10 is not particularly limited and can be adjusted according to actual conditions. Specifically, the thickness of the transparent electrode 10 is 50nm-200nm, preferably 120nm.

[0041] Specifically, the patterned structure is formed on the transparent conductive layer 102 and is close to the electron transport layer 30 .

[0042] Specifically, the material of the transparent conductive layer 102 includes one of indium zinc oxide (IZO), indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped tin oxide (AZO), indium tungsten oxide (IWO), and cesium indium oxide (ICO).

[0043] Specifically, the material of the transparent insulating layer 101 includes any one of transparent glass, polyethylene terephthalate (PET) film, and polyethylene naphthalate (PEN) film.

[0044] It should be noted that the space group of perovskite is cubic system Pm-3m, and the unit cell parameter is, for example, a=3.848A.

[0045] That is, the size of the repeating unit S or the gap between two adjacent repeating units S is an integer multiple of the unit cell parameter of the perovskite material in the perovskite layer, which means that the size or gap of the repeating unit S is an integer multiple of the cubic unit cell parameter of the perovskite 3.848A;

[0046] Further, the integer multiple is preferably 10-500 times, preferably 30-200 times, that is, the size of the repeating unit S or the gap between the repeating units can be any one of 15.37nm, 23.06nm, 26.90nm, 30.74nm, 38.43nm or 76.86nm;

[0047] Specifically, the size of the repeating unit S ranges from 5 to 100 nm, preferably from 10 nm to 80 nm, and further preferably from 15 to 50 nm.

[0048] Specifically, the electron transport layer 20 is formed on the transparent electrode 10 , and the electron transport layer 20 has a structure corresponding to the repeating unit S, so that the electron transport layer 20 has the same profile surface as the transparent electrode 10 .

[0049] Specifically, the thickness of the electron transport layer 20 is preferably 20-200 nm, preferably 100 nm.

[0050] Specifically, the material of the electron transport layer 20 includes tin dioxide (SnO2), titanium dioxide (TiO2), zinc oxide (ZnO), [6,6]-phenyl C 61 Isomethyl butyrate (PC 61 BM) and fullerene (C 60 )

[0051] Specifically, the thickness of the perovskite layer 30 is 200nm to 700nm;

[0052] Specifically, the perovskite layer 30 includes a perovskite material, and the perovskite material includes a compound of ABX3 type structure, A is one or more of formamidinium ion (FA), methylamine ion (MA), and cesium ion (Cs); B is one or more of divalent lead ion (Pb) and divalent tin ion (Sn); X is CL-, Br- - ,I - One or more of the halogen ions included.

[0053] Specifically, the thickness of the hole transport layer 40 is 20 nm-200 nm, preferably 80 nm.

[0054] Specifically, the material of the hole transport layer 40 includes one or more of Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene), P3HT (poly(3-hexylthiophene-2,5-diyl)), PEDOT:PSS (polyethylenedioxythiophene-poly(styrenesulfonate)), NiOx (nickel oxide), CuSCN (cuprous thiocyanate) and PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]).

[0055] It should be noted that a short and thick hole transport layer 40 can improve the photoelectric conversion efficiency because it can reduce the propagation distance of photoelectrons, improve the charge separation efficiency, and reduce reflection loss and resistance loss. However, an overly thin hole transport layer may cause poor contact between the anode and the electrolyte, affecting the stability of the battery.

[0056] Specifically, the thickness of the metal electrode 50 is 50-200 nm, preferably 80 nm.

[0057] Specifically, the material of the metal electrode 50 may be a material that matches the work function of the hole transport layer 40 , including but not limited to gold, silver, copper, calcium, barium, chromium, and the like.

[0058] In this embodiment, a patterned structure is formed on the transparent electrode 10. The patterned structure matches the unit cell parameters of the perovskite material in the perovskite layer. On the one hand, it can provide multiple optical refractive / reflective surfaces, and adjust the light path in accordance with the different refractive indices of adjacent film layers, thereby optimizing the transmission path of light, so that light with a large angle can be utilized, thereby improving the light intensity.

[0059] On the other hand, by limiting the parameters of the patterned structure, a microstructure surface having a regularity that conforms to crystal growth is formed on the side of the electron transport layer 20 close to the perovskite layer 30, so that when the perovskite crystal is formed, the starting growth line of the perovskite crystal is along the extension direction of the repeating unit, thereby improving the arrangement order of the perovskite crystal, thereby improving the crystallization quality of the perovskite film, reducing the grain boundaries of the perovskite crystal, and reducing the carrier recombination losses caused by grain boundary defects, thereby increasing the carrier lifetime and reducing the loss of carrier combination, and ultimately improving the photoelectric conversion efficiency of the perovskite solar cell.

[0060] In one embodiment, if Figure 2 , Figure 3 As shown, the patterned structure includes protrusions and / or grooves, the protrusions and the grooves have light refractive or reflective surfaces, and the refractive index of the transparent electrode is smaller than the refractive index of the electron transport layer.

[0061] Specifically, Figure 2 As shown, the protrusion / groove structure can form a repeatedly distributed repeating unit S shape; after the light is incident, it can be reflected and / or scattered multiple times on the surface of the protrusion or groove with a predetermined inclination, so that most of the light can reach the perovskite layer 30, which plays a role in concentrating the light intensity, thereby improving the utilization rate of light.

[0062] Wherein, d is the size of the repeating unit S or the gap between two adjacent repeating units S.

[0063] At the same time, since the size of the patterned structure matches the unit cell size of the perovskite, when the perovskite crystal is formed through the annealing step, the perovskite crystal can form grain boundaries along the patterned structure (edges of protrusions / grooves) and grow sequentially, thereby improving the order of the perovskite crystal, reducing the grain boundary area of ​​the perovskite crystal, reducing the grain boundaries, avoiding carrier recombination losses caused by grain boundary defects, increasing the carrier lifetime, reducing the loss of carrier combination, and improving the perovskite solar cell in light energy absorption, charge transfer and stability.

[0064] It can be understood that in order to prevent light from overflowing, the refractive index of the transparent electrode 10 is smaller than the refractive index of the electron transport layer 20. Since the refractive index of the transparent electrode 10 is smaller than the refractive index of the electron transport layer 20, the internal light is not easily transmitted to the outside. This method can optimize the transmission and utilization efficiency of light energy. By selecting the refractive index, the internal light is prevented from being emitted to the outside, and more light is guided to the perovskite layer, thereby improving the absorption efficiency of light energy.

[0065] In one embodiment, the aspect ratio of the protrusion or groove structure may be (1.3-1.6):1;

[0066] It can be understood that by adopting the above-mentioned aspect ratio, on the one hand, in the direction perpendicular to the perovskite layer, the suitable aspect ratio makes it difficult for the light transmitted in the convex portion to be transmitted outward from the convex portion again, thereby more effectively capturing and scattering the incident light. On the other hand, by adopting the above-mentioned ratio, highly ordered perovskite crystals can also be formed on the connecting surface between the upper edge and the lower edge of the concave-convex structure, which can further improve the conduction capacity on the basis of improving the utilization rate of light energy.

[0067] In one embodiment, if Figure 4 and Figure 5 As shown, the patterned structure includes the repeating units surrounded by protrusions, and the repeating units include regular polygons.

[0068] Specifically, the regular polygon includes but is not limited to a regular triangle, a regular quadrilateral or a regular hexagon, preferably a regular hexagon.

[0069] It is understandable that by forming a regular patterned structure, the strength of the transparent electrode can be improved, which can effectively prevent water vapor intrusion and reduce the life of the perovskite solar cell compared to the traditional striped structure.

[0070] In one embodiment, if Figure 4 and Figure 5 As shown, the protrusion of the patterned structure includes a bank-like structure B, and the bank-like structure B has an inclined surface. There is an acute angle α between the inclined surface and the horizontal plane of the transparent electrode, and 30°<α<70°.

[0071] It is understandable that when the angle between the inclined surface and the horizontal plane of the transparent electrode is close to 0° or 90°, its adjustment effect on the light path is smaller and it cannot play an obvious effect of concentrating the light path.

[0072] In one embodiment, a seed layer is provided between the electron transport layer 20 and the perovskite layer 30 , wherein the material of the seed layer includes CsPbI 3 or RbPbI 3 .

[0073] Specifically, the seed layer uses an easily crystallized material so that it is preferentially formed on the electron transport layer, so as to achieve the effect of controlling the growth of perovskite crystals in a specific direction, while allowing the perovskite material to form α-phase perovskite crystals during the crystallization process, and stabilize the crystal phase of the perovskite under various conditions, thereby preparing a long-term stable perovskite thin film layer and improving the efficiency and stability of solar cells.

[0074] A method for manufacturing a perovskite solar cell, comprising:

[0075] S1, providing a transparent electrode 10 including a transparent insulating layer 101 and a transparent conductive layer 102;

[0076] The specific cleaning method is to sequentially treat the transparent electrode 10 with ultrasound and plasma in deionized water, glass cleaning agent, acetone, and ethanol for 1 minute.

[0077] Specifically, the thickness of the transparent electrode 10 is 50 nm-200 nm, preferably 120 nm.

[0078] S2, forming a patterned structure including a repeating unit S in the transparent conductive layer 102;

[0079] Specifically, the patterned structure can be obtained by laser etching;

[0080] Specifically, the patterned structure depth may be 10nm-80nm;

[0081] The size of the repeating unit S or the gap between the repeating units S may be any one of 15.37 nm, 23.06 nm, 26.90 nm, 30.74 nm, 38.43 nm or 76.86 nm;

[0082] Specifically, the size of the repeating unit S ranges from 5 to 100 nm, preferably from 10 nm to 80 nm, and further preferably from 15 to 50 nm.

[0083] S3, forming an electron transport layer 20 on the transparent electrode 10, wherein the material of the electron transport layer 20 covers the surface of the transparent electrode 10;

[0084] Specifically, a TiO 2 seed layer is formed on the transparent electrode 10 by a spin coating method.

[0085] The specific operation is: tetrabutyl titanate, ethanol, acetylacetone, and glacial acetic acid are mixed in a volume ratio of 0.5:4:0.5:1, and 0.5 parts of deionized water are added, and stirred at room temperature for 8-10 hours to obtain a TiO2 precursor solution, and the TiO2 precursor solution is spin-coated on a transparent electrode, and the transparent electrode 10 is heated at 125°C in air, and then heated at 450°C to obtain a conductive substrate with a dense TiO2 seed layer deposited thereon.

[0086] A porous TiO2 film layer is formed on the TiO2 seed layer.

[0087] The acidic slurry is diluted with ethanol to obtain a porous film slurry, and the porous film slurry is coated on the surface of the TiO2 seed layer by spin coating. After the completion, the film is transferred to a hot plate and heated at 500 degrees Celsius to evaporate the solvent to obtain an electron transport layer;

[0088] Specifically, the thickness of the electron transport layer 20 is preferably 20-200 nm, preferably 100 nm.

[0089] S4, forming a perovskite layer 30 , a hole transport layer 40 , and a metal electrode 50 on the electron transport layer 20 .

[0090] Specifically, the perovskite precursor PbI2 (concentration 463 mg / ml) was dissolved in DMSO, and the solution was applied to the surface of the perovskite film by spin coating for 40 seconds. Immediately after the coating, the film was transferred to a hot plate preheated to 70 degrees and heated for 30 minutes.

[0091] Then, the film was cooled to room temperature and spin-coated with an isopropanol solution of CH3NH3I (concentration 10 mg / ml) at a rotation speed of 2800 rpm for 50 s. The film was placed on a hot plate at 70 degrees and heated for 30 minutes to obtain a perovskite layer 30.

[0092] Specifically, the formation of the perovskite layer 30 can also be achieved by treating the perovskite solution by any of spin coating, scraping, slit continuous coating, and spraying, and coating it on the surface of a substrate on which an electron transport layer has been prepared to obtain a perovskite film, and then annealing the film to obtain a perovskite layer.

[0093] Specifically, the thickness of the perovskite layer 30 is 200 nm to 700 nm, preferably 450 nm.

[0094] A layer of hole transport material is spin-coated on the surface of the brown-black film at a speed of 3000 rpm for 30 seconds. After the spin coating, the film is left for 24 hours to allow the hole transport material to fully penetrate. The thickness of the hole transport layer is 20 nm-200 nm, preferably 80 nm. The hole transport material can be spiro-OMeTAD at a concentration of 0.17 mol / L, and the solvent is chlorobenzene.

[0095] The thin film obtained in the previous step is subjected to vacuum evaporation of metal, and the thickness of the metal electrode 50 is 80 nm.

[0096] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with specific implementation methods.

[0097] Example 1

[0098] A perovskite solar cell, comprising:

[0099] A transparent electrode, an electron transport layer, a perovskite layer, a hole transport layer, and a metal electrode are stacked in sequence;

[0100] The transparent electrode is an ITO glass plate with a thickness of 120nm;

[0101] The patterned structure is a plurality of equally spaced grooves arranged in one direction, wherein the grooves are 38.43 nm deep, the sidewall inclination angle is 60°, the groove bottom width is 76.86 nm, and the spacing between two adjacent grooves is 307 nm.

[0102] The electron transport layer is TiO2, including a dense layer and a porous layer, the thickness of the dense film layer is 50nm, and the thickness of the porous film layer is 100nm;

[0103] The material of the perovskite layer is MAPbI3, with a thickness of 450nm;

[0104] Hole transport layer, Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene), thickness 80 nm;

[0105] The metal electrode is a Cu electrode with a thickness of 80 nm.

[0106] Example 2

[0107] A perovskite solar cell, comprising:

[0108] A transparent electrode, an electron transport layer, a perovskite layer, a hole transport layer, and a metal electrode are stacked in sequence;

[0109] The transparent electrode is an ITO glass plate with a thickness of 120nm;

[0110] The patterned structure is a plurality of equally spaced grooves arranged in one direction, wherein the grooves are 38.43 nm deep, the sidewall inclination angle is 60°, the groove bottom width is 76.86 nm, and the spacing between two adjacent grooves is 307 nm.

[0111] The electron transport layer is TiO2, including a dense layer and a porous layer, the thickness of the dense film layer is 50nm, and the thickness of the porous film layer is 100nm;

[0112] Seed layer, made of CsPbI3, with a thickness of 5 nm;

[0113] The material of the perovskite layer is MAPbI3, with a thickness of 450nm;

[0114] Hole transport layer, Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene), thickness 80 nm;

[0115] The metal electrode is a Cu electrode with a thickness of 80 nm.

[0116] Example 3

[0117] A perovskite solar cell, comprising:

[0118] A transparent electrode, an electron transport layer, a perovskite layer, a hole transport layer, and a metal electrode are stacked in sequence;

[0119] The transparent electrode is an ITO glass plate with a thickness of 120nm;

[0120] like Figure 4 As shown, the patterned structure is a plurality of regular hexagonal structures arranged in an array surrounded by dams, the dams are 50 nm high, the sidewalls are inclined at an angle of 60°, and the spacing between the upper edges of the dams is 26.90 nm.

[0121] The electron transport layer is TiO2, including a dense layer and a porous layer, the thickness of the dense film layer is 50nm, and the thickness of the porous film layer is 100nm;

[0122] The material of the perovskite layer is MAPbI3, with a thickness of 450nm;

[0123] Hole transport layer, Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene), thickness 80 nm;

[0124] The metal electrode is a Cu electrode with a thickness of 80 nm.

[0125] Example 4

[0126] A perovskite solar cell, comprising:

[0127] A transparent electrode, an electron transport layer, a perovskite layer, a hole transport layer, and a metal electrode are stacked in sequence;

[0128] The transparent electrode is an ITO glass plate with a thickness of 120nm;

[0129] The patterned structure is a plurality of equally spaced grooves arranged in one direction, wherein the grooves are 38.43 nm deep, the sidewalls are inclined at an angle of 45°, the groove bottom is 38.43 nm wide, and the spacing between two adjacent grooves is 38.43 nm.

[0130] The electron transport layer is TiO2, including a dense layer and a porous layer, the thickness of the dense film layer is 50nm, and the thickness of the porous film layer is 100nm;

[0131] The material of the perovskite layer is MAPbI3, with a thickness of 450nm;

[0132] Hole transport layer, Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene), thickness 80 nm;

[0133] The metal electrode is a Cu electrode with a thickness of 80 nm.

[0134] Comparative Example 1

[0135] The film stacking structure and materials are the same as those in Example 1, except that there is no patterned structure on the transparent electrode.

[0136] Comparative Example 2

[0137] It has the same film layer stack structure and materials as Example 1, except that the patterned structure is a plurality of equally spaced grooves arranged along one direction, the groove depth is 20nm, the side wall inclination angle is 90°, the groove bottom width is 20nm, and the spacing between two adjacent grooves is 20nm.

[0138] Detection Example

[0139] The test method is as follows:

[0140] The open circuit voltage test method, short circuit current density test method, fill factor test method, battery efficiency test method, and battery active area test method all use a solar simulator.

[0141] The test method for the active area of ​​the battery uses a mask.

[0142] Table 1 shows the test parameters of Examples 1-4 and Comparative Examples 1-2

[0143]

[0144] The substrate size formed by the above different perovskite films is 5.7*5.7cm 2 The device performance was measured under the condition of scanning from 1.2V to 0V. After adjusting the interface morphology of the transparent electrode layer, the device efficiency increased from 18.71 to 20.91%. It can be seen that setting a patterned structure can not only increase the light utilization rate, but also guide the crystallization of perovskite crystals to form high-quality perovskite crystals and thus increase the battery efficiency. Adding a seed layer can also further promote the crystallization morphology of the perovskite crystals and enhance the stability of the device.

[0145] The above is a detailed introduction to a perovskite solar cell and a preparation method thereof provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technicians in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A perovskite solar cell, characterized in that: include: A transparent electrode, an electron transport layer, a perovskite layer, a hole transport layer, and a metal electrode are stacked in sequence; Wherein, the side of the transparent electrode close to the electron transport layer has a patterned structure; the transparent electrode side is the light incident side, and the patterned structure includes a plurality of repeating units; The size of the repeating unit is an integer multiple of the unit cell parameter of the perovskite material in the perovskite layer; or The gap between two adjacent repeating units is an integer multiple of the unit cell parameter of the perovskite material in the perovskite layer.

2. The perovskite solar cell according to claim 1, characterized in that The patterned structure includes a protrusion and / or a groove structure, the protrusion and the groove have a light refractive or reflective surface, and the refractive index of the transparent electrode is smaller than the refractive index of the electron transport layer.

3. The perovskite solar cell according to claim 2, characterized in that The patterned structure includes the repeating units surrounded by protrusions, and the repeating units include regular polygons.

4. The perovskite solar cell according to claim 2, characterized in that The protrusion of the patterned structure includes a bank-like structure, the bank-like structure has an inclined surface, an acute angle α is formed between the inclined surface and the horizontal surface of the transparent electrode, and 30°<α<70°.

5. The perovskite solar cell according to claim 1, characterized in that The size of the repeating unit, or the gap between two adjacent repeating units, ranges from 10 nm to 200 nm.

6. The perovskite solar cell according to claim 1, characterized in that A seed layer is provided between the electron transport layer and the perovskite layer, and a material of the seed layer includes CsPbI3 or RbPbI3.

7. The perovskite solar cell according to claim 6, characterized in that The electron transport material includes tin dioxide (SnO2), titanium dioxide (TiO2), zinc oxide (ZnO), [6,6]-phenyl C 61 Isomethyl butyrate (PC 61 BM) and fullerene (C 60 ) 8. The perovskite solar cell according to claim 1, characterized in that The material of the transparent electrode includes one of indium zinc oxide (IZO), indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped tin oxide (AZO), tungsten indium oxide (IWO), and cesium indium oxide (ICO).

9. The perovskite solar cell according to claim 1, characterized in that: The perovskite layer includes a perovskite material, and the perovskite material includes ABX3, wherein A includes CH3NH3 + 、CH(NH2) 2+ 、CH(NH2)2 + , Cs + , Rb + At least one of, B includes Pb 2+ Sn 2+ ,Ge 2+ At least one of, X includes at least one of Cl, Br, and I.

10. A method for manufacturing a perovskite solar cell, characterized in that: include: Providing a transparent electrode including a transparent insulating layer and a transparent conductive layer; forming a patterned structure on the transparent conductive layer, wherein the patterned structure includes a plurality of repeating units; forming an electron transport layer on the transparent electrode, wherein the material of the electron transport layer covers the surface of the transparent electrode; A perovskite layer, a hole transport layer and a metal electrode are sequentially formed on the electron transport layer.

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