Carrier and deposition equipment

Abstract

The invention discloses a carrier and deposition equipment. The carrier comprises a carrier main body, a heating plate and a slide glass boat. The carrier body is provided with a mounting cavity. The heating plate is mounted on the carrier body. And the slide glass boat is detachably placed in the mounting cavity. The slide glass boat is provided with a containing cavity used for containing a substrate, and the slide glass boat is used for covering at least one face of the substrate. Wherein the heating plate is opposite to one side of the slide glass boat and is arranged at an interval, and an airflow channel is formed between the heating plate and the slide glass boat; the carrier body is provided with an air inlet and an air outlet, and the air flow channel communicates with the air inlet and the air outlet. By means of the mode, the surface needing to be coated can be conveniently heated and coated.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a carrier and a deposition device. Background Art

[0002] In the semiconductor field, a whole substrate can be cut into half or multiple small substrates. The surface after cutting has serious surface defects, and surface treatment is required to reduce the charge recombination of the cut surface. In the related art, the surface defects after cutting are improved by heating the stacked substrates and then coating them for passivation. However, the related equipment heats the entire substrate. If the cut surface needs to be heated to the process temperature, a long preheating and heat conduction process is required. Summary of the invention

[0003] The embodiments of the present application provide a carrier and a deposition device, which can conveniently heat and coat a surface that needs to be coated.

[0004] In a first aspect, an embodiment of the present application provides a carrier. The carrier includes a carrier body, a heating plate and a wafer boat. The carrier body has an installation cavity. The heating plate is installed on the carrier body. The wafer boat can be detachably placed in the installation cavity. The wafer boat has a receiving cavity for accommodating a substrate, and the wafer boat is used to cover at least one side of the substrate. Among them, the heating plate is opposite to one side of the wafer boat and is arranged at a distance, and an air flow channel is formed between the heating plate and the wafer boat; the carrier body has an air inlet and an air outlet, and the air flow channel connects the air inlet and the air outlet.

[0005] Optionally, at least one side of the wafer boat is open to expose at least one side of the substrate;

[0006] At least one open side of the wafer boat is arranged corresponding to the heating plate to form an air flow channel;

[0007] Alternatively, the wafer boat has multiple open sides that are arranged one-to-one with the heating plates to form multiple airflow channels, and the airflow channels are connected in parallel or in series.

[0008] Optionally, the wafer boat has a accommodating cavity with an opening at one end, the accommodating cavity is used to accommodate substrates, the substrates in the wafer boat are stacked, and the side surfaces of the stacked substrates to be coated are exposed to the air flow channel from the opening, and the other surfaces of the stacked substrates are covered by the wafer boat.

[0009] Optionally, the carrier body includes a base plate and a block, at least two blocks are arranged opposite to each other on both sides of the base plate; the block and the base plate are arranged to form an installation cavity; the heating plate is installed on the base plate, and the intervals between the heating plate and the blocks on both sides form an air inlet and an air outlet respectively.

[0010] Optionally, the air inlet, the air flow channel and the air outlet are arranged on the same axis, the side of the wafer boat facing the heating plate is exposed in the air flow channel, and the other sides of the wafer boat are shielded by the carrier body.

[0011] Optionally, the wafer boat, the heating plate, the air inlet, the air flow channel and the air outlet constitute a process unit, and the carrier has a plurality of process units arranged in the extension direction of the air flow channel or perpendicular to the extension direction of the air flow channel.

[0012] Optionally, two adjacent process units share a same heating plate, and the process units are symmetrically arranged with the heating plate as an axis.

[0013] Optionally, at least two electrode feed-in parts are arranged at intervals between the part of the carrier body corresponding to the heating plate, and the two electrode feed-in parts are electrically connected to the heating plate.

[0014] Optionally, the air inlet and the air outlet are provided with flow equalizers.

[0015] Optionally, a plurality of wafer boats are arranged in the installation cavity, and the wafer boats and the heating plate form a plurality of air flow channels, and the air flow channels are connected in series and / or in parallel.

[0016] In a second aspect, an embodiment of the present application provides a deposition device. The deposition device includes a device body, a door body, and the aforementioned carrier. The device body and the door body are arranged to form a process cavity; the carrier is detachably placed in the process cavity, and the deposition device includes an air inlet channel and an air outlet channel, the air inlet channel is arranged correspondingly to the air inlet, and the air outlet channel is arranged correspondingly to the air outlet.

[0017] Optionally, the door body is provided with a spray array, the spray array is arranged corresponding to the air inlet, and the equipment body is provided with a guide channel. When the door body and the equipment body are closed and matched, the guide channel is connected to the spray array, and the guide channel and the spray array constitute an air inlet channel.

[0018] Optionally, the door body is formed with a boss toward the equipment body, and the spray array is arranged on the boss.

[0019] Optionally, at least two electrode feed-in parts are arranged at intervals in a portion of the carrier body corresponding to the heating plate, and the two electrode feed-in parts are electrically connected to the heating plate;

[0020] Electrodes are arranged in intervals in the process chamber, and the electrodes are arranged correspondingly to the electrode feeding parts;

[0021] The electrode feeding part and the electrode are arranged at intervals in the direction from the door body toward the device body; the electrode is used to feed current to the carrier.

[0022] Optionally, a plurality of carriers are arranged in the process chamber, and the air flow channels in adjacent carriers are connected in series and / or in parallel.

[0023] The beneficial effects of the present application are as follows: Different from the prior art, the carrier can be detachably placed in the deposition equipment for thin film deposition, and the deposition equipment can feed current to the carrier and can introduce process gas through the air inlet and outlet of the carrier. By arranging the heating plate opposite to one side of the carrier boat and arranged at intervals, on the one hand, the heating plate can centrally heat one side of the carrier boat, so that the side of the substrate that needs to be coated can be centrally heated, thereby reducing the time required for preheating and heat conduction; on the other hand, the air flow channel formed by the interval between the heating plate and the carrier boat can allow the process gas to flow through, so that the side of the carrier boat facing the heating plate can contact the process gas, so that the surface of the substrate that needs to be coated can interact with the process gas, achieving the effect of coating passivation. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 is a schematic structural diagram of an embodiment of a deposition device of the present application;

[0025] Figure 2 yes Figure 1 A schematic cross-sectional structural diagram of the deposition device shown;

[0026] Figure 3 yes Figure 1 A schematic diagram of the explosion structure of the carrier in the deposition equipment shown;

[0027] Figure 4 yes Figure 1 A schematic diagram of a cross-sectional structure of a deposition device is shown;

[0028] Figure 5 yes Figure 4 An enlarged schematic diagram of the structure of the deposition device A is shown;

[0029] Figure 6 yes Figure 1 A schematic diagram of the structure of the spray array in the door body of the deposition equipment is shown.

[0030] Reference numerals:

[0031] Deposition equipment, 1; equipment body, 11; electrode, 111; guide channel, 112; process chamber, 113; substrate, 2; door body, 12; spray array, 121; carrier, 13; installation cavity, 130; bottom plate, 131; block, 132; side plate, 133; heating plate, 134; wafer boat, 135; air inlet, 136; air outlet, 137; air flow channel, 138; flow equalizer, 139; electrode feed part, 140. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0033] In the field of semiconductor technology, such as photovoltaics, a whole cell (i.e., substrate, or solar cell) can be cut into half or multiple small cells. Small cells have the characteristics of high component voltage. Generally, laser cutting is used to cut the cell, and the cut surface forms a bare surface. However, the surface of bare silicon has many defects and serious charge recombination on the surface of bare silicon, which affects the life of minority carriers and thus affects the efficiency of the cell, and further affects the power generation of the component.

[0034] In the related art, the cut surface is passivated with a passivation film such as aluminum oxide or silicon nitride after laser cutting of the finished battery, thereby reducing the charge recombination of the cut surface. Generally, the cut surface is passivated by laminating, stacking the cut substrates together and placing them in a laminating tool to deposit the coating on the cut surface.

[0035] For existing deposition equipment, due to the large number of stacked silicon wafers, heat conduction is slow, and the reaction of the deposition process requires sufficient temperature on the substrate. In existing deposition equipment, preheating is carried out in the cavity before the process, which usually takes a lot of time to preheat, and during the preheating process, the surface temperature of the cutting surface is continuously transferred to the cold end part behind the cutting surface, resulting in the temperature of the cutting surface being always lower than the set temperature of the machine (i.e., the temperature preset by the process), and it takes a long time to reach the temperature preset by the process. Therefore, if the preheating time in the cavity is insufficient, the wafer carrier will be in an uneven state, resulting in uneven coating when the passivation film is deposited. At the same time, due to the large gap between the cutting surface and the external cavity, the reaction source (i.e., the process gas) passes through the cutting surface non-parallel, resulting in a bypass plating phenomenon (abnormal coating method leads to abnormal coating color phenomenon), and there are problems such as low cavity space utilization and complex structure.

[0036] In the vacuum coating equipment of the related art, the following technical problems exist when edge coating is performed: First, under the existing process conditions, due to the slow heat conduction of the wafer boat, the large process chamber, and the heating plates distributed around the process chamber, it takes a long time for the wafer boat to reach the temperature required for the process, and the heating is uneven. If the preheating time is short, the surface of the cut surface of the stack will not reach the preset temperature of the process, resulting in poor quality of the deposited passivation film. Second, in order to meet the heating requirements, the existing process chamber is provided with inner and outer cavities, and the structure is relatively complex. The heating plates are distributed around the inner cavity, far away from the position where the coating is required, and the heating efficiency is low. In order to improve the above technical problems, the present application can provide the following embodiments.

[0037] Combination Figure 1 , an embodiment of the present application provides a deposition device 1. The deposition device 1 includes a device body 11, a door body 12 and a carrier 13. The device body 11 and the door body 12 surround a process chamber 113. The carrier 13 can be detachably placed in the process chamber 113. The deposition device 1 can feed current into the carrier 13 on the one hand, and can pass process gas into the carrier 13 on the other hand. The carrier 13 of the present application is exemplarily introduced below.

[0038] Combination Figure 2 and Figure 3 , an embodiment of the present application provides a carrier 13. The carrier 13 includes a carrier body, a heating plate 134 and a wafer boat 135. The carrier body has an installation cavity 130. The heating plate 134 is installed on the carrier body. The wafer boat 135 can be detachably placed in the installation cavity 130. The wafer boat 135 can be used to place the substrate 2. The wafer boat 135 has a receiving cavity for accommodating the substrate 2. The substrate 2 can be stacked in the wafer boat 135. And the wafer boat 135 allows the portion of the substrate 2 that needs to be coated to be exposed. The wafer boat 135 is detachably matched with the carrier 13. The wafer boat 135 is used to cover at least one side of the substrate 2. The wafer boat 135 can be disassembled from the carrier 13, and the substrate 2 is placed or taken out, and then placed in the installation cavity 130. The heating plate 134 can heat the portion of the substrate 2 that needs to be coated, so that the substrate 2 is heated to a preset process temperature.

[0039] The heating plate 134 is opposite to one side of the wafer carrier boat 135 and is spaced apart from each other, and an air flow channel 138 is formed between the heating plate 134 and the wafer carrier boat 135. The carrier body has an air inlet 136 and an air outlet 137, and the air flow channel 138 connects the air inlet 136 and the air outlet 137. The deposition device 1 includes an air inlet channel and an air outlet channel, the air inlet channel is correspondingly arranged with the air inlet 136, and the air outlet channel is correspondingly arranged with the air outlet 137.

[0040] The heating plate 134 is arranged opposite to the wafer boat 135 and spaced apart from each other, so that the heating plate 134 can centrally heat one side of the wafer boat 135. The side of the substrate 2 that needs to be coated can be exposed on the side of the wafer boat 135 that is opposite to the heating plate 134, so that the heating plate 134 can centrally heat the side of the substrate 2 that needs to be coated. On the other hand, the heating plate 134 can be spaced apart from the wafer boat 135 to form a gas flow channel 138 for the process gas to flow through, so that the process gas can flow directly and evenly and parallelly through the surface of the substrate 2 that needs to be coated.

[0041] In some embodiments, at least one side of the wafer boat 135 is open, and the opening can expose at least one side of the substrate 2 to the mounting cavity, so that the heating plate 134 can heat the substrate 2 in a targeted manner. In some embodiments, at least one side of the wafer boat 135 with an opening is arranged corresponding to the heating plate 134 to form an airflow channel 138. In other embodiments, multiple open sides of the wafer boat 135 are arranged one-to-one corresponding to the heating plate 134 to form multiple airflow channels 138, and the airflow channels 138 are connected in parallel and / or in series.

[0042] In some embodiments, the gas inlet 136 and the gas outlet 137 are provided with flow equalizers 139. The flow equalizers 139 can increase the uniformity of the process gas entering the gas flow channel 138, thereby increasing the uniformity of the coating.

[0043] In some embodiments, the air inlet 136, the air flow channel 138, and the air outlet 137 are arranged on the same axis so that the process gas can flow through the substrate 2 in parallel. Optionally, the axis where the air inlet 136, the air flow channel 138, and the air outlet 137 are located is parallel to the side of the heating plate 134 and the wafer boat 135 facing the heating plate 134. Optionally, the axis where the air inlet 136, the air flow channel 138, and the air outlet 137 are located is parallel to the plane where the side of the substrate 2 to be coated is located.

[0044] In some embodiments, the air inlet 136 and the air outlet 137 are arranged in a square shape, and the shapes of the air inlet 136 and the air outlet 137 are the same as the projection shape of the air flow channel 138. Optionally, the projections of the air inlet 136, the air flow channel 138 and the air outlet 137 along the air axis coincide. In this way, the process gas can be further made to flow uniformly and parallelly through the substrate 2.

[0045] In some embodiments, the air inlet 136, the air flow channel 138 and the air outlet 137 are arranged on the same axis, the side of the carrier boat 135 facing the heating plate 134 is exposed in the air flow channel 138, and the other sides of the carrier boat 135 are shielded by the carrier body. In this way, the flow of the airflow in the deposition device 1 can be limited to the air inlet 136, the air flow channel 138 and the air outlet 137, reducing the flow of other process gases.

[0046] In some embodiments, the wafer boat 135 has a receiving cavity with an opening at one end, and the receiving cavity is used to receive the substrate 2. The substrates 2 in the wafer boat 135 are stacked, and the side surfaces of the stacked substrates 2 to be coated are exposed to the airflow channel 138 from the opening. The other surfaces of the stacked substrates 2 are covered by the wafer boat 135. The cut surface of the substrate 2 needs to be passivated, while the other surfaces of the substrate 2 do not need to be coated. When process gas also flows through the other surfaces, it is easy to produce unexpected coating, such as wrap-around coating or the atomic layer deposition coating that should be converted into chemical vapor deposition coating. By providing the wafer boat 135, on the one hand, the cut surface of the substrate 2 that needs to be coated can be exposed; on the other hand, the surface of the substrate 2 that does not need to be coated can be covered, thereby reducing unnecessary process gas flow and improving the technical problem of wrap-around coating.

[0047] In some embodiments, a plurality of carriers 13 are provided in the process chamber 113, and the gas flow channels 138 in adjacent carriers are connected in series and / or in parallel. Multiple carriers 13 may be provided in the same deposition device 1, so that multiple groups of substrates 2 may be passivated at the same time. Among them, the gas flow channels 138 in adjacent carriers 13 may be connected in series. The process gas may pass through the carriers 13 in sequence from the direction in which the carriers 13 are arranged. The gas flow channels 138 in adjacent carriers 13 may be connected in parallel. The process gas may enter the carriers 13 separately. Optionally, the gas flow channels 138 of the carriers 13 are partially connected in series and partially connected in parallel, and the process gas may enter the carriers 13 with different gas flow channels 138 connected in parallel, respectively, and then enter the carriers 13 with the gas flow channels 138 connected in series in sequence.

[0048] In some embodiments, a plurality of wafer boats 135 are provided in the mounting cavity, and the wafer boats 135 and the heating plate 134 form a plurality of airflow channels 138, and the airflow channels 138 are connected in series and / or in parallel. A plurality of wafer boats 135 may be provided in the same carrier 13, so that multiple groups of substrates 2 may be passivated at the same time. Among them, the airflow channels 138 formed by adjacent wafer boats 135 and the heating plate 134 may be connected in series. The process gas may pass through the airflow channels 138 in sequence from the direction in which the wafer boats 135 are arranged. The airflow channels 138 formed by adjacent wafer boats 135 and the heating plate 134 may be connected in parallel. The process gas may enter the airflow channels 138 respectively. Optionally, the airflow channels 138 may be partially connected in series and partially connected in parallel, and the process gas may enter the airflow channels 138 formed by the wafer boats 135 and the heating plate arranged in one direction respectively, and then enter the airflow channels 138 formed by the wafer boats 135 and the heating plate 134 arranged in another direction in sequence.

[0049] In some embodiments, the carrier body includes a bottom plate 131 and a stopper 132. At least two stoppers 132 are arranged opposite to each other on both sides of the bottom plate 131. The stoppers 132 and the bottom plate 131 are arranged to form a mounting cavity 130. The stoppers 132 arranged on the opposite sides can be arranged with the bottom plate 131 to form a mounting cavity 130 for placing a wafer boat 135. Among them, two stoppers 132 arranged at opposite intervals can constitute a group of stopper groups, and a plurality of stopper groups can be arranged on the bottom plate 131 along the same direction, and the two opposite stoppers 132 in the stopper group can form a mounting cavity 130 with the bottom plate 131. In other words, a carrier 13 can install and place multiple wafer boats 135 by setting multiple stopper groups. In some embodiments, a side panel 133 is provided at the edge of the bottom plate 131 , and the side panel 133 can be used to install and fix the wafer boat 135 or the block 132 at the edge portion. A plurality of side panels 133 at the edge portion can also be arranged to form sufficient space to install the block 132 and the wafer boat 135 .

[0050] The plurality of wafer boats 135 may be arranged in a direction relative to the spacing between the two stoppers 132. The plurality of wafer boats 135 may also be arranged in a direction perpendicular to the spacing between the stoppers 132. In other words, the block groups may be arranged in multiple groups in different directions, thereby placing the plurality of wafer boats 135.

[0051] Further, the heating plate 134 is mounted on the bottom plate 131, and the heating plate 134 and the blockers 132 disposed opposite to each other on both sides of the bottom plate 131 in one block group are spaced apart to form the aforementioned air inlet 136 and air outlet 137. On the one hand, the heating plate 134 can be spaced apart from and disposed opposite to the wafer boat 135 to form an air flow channel 138. On the other hand, the heating plate 134 can also be spaced apart from the blockers 132 surrounding the mounting cavity 130 to form the air inlet 136 and air outlet 137. In the above manner, the heating plate 134 can be spaced apart from the wafer boat 135 and the blockers 132 at the same time, thereby appropriately combining the functions of the blockers 132, the mounting cavity 130, the wafer boat 135 and the heating plate 134 to form a channel for the process gas to pass through.

[0052] In some embodiments, the wafer boat 135, the heating plate 134, the air inlet 136, the air flow channel 138 and the air outlet 137 constitute a process unit. The air inlet 136, the air flow channel 138 and the air outlet 137 can be formed by the interval between the aforementioned block 132 and the heating plate 134, and the interval between the wafer boat 135 and the heating plate 134, which is not specifically limited here. The definition of each element in the process unit is divided by function. The wafer boat 135 can carry the substrate 2, expose the surface of the substrate 2 that needs to be coated, and cover the surface that does not need to be coated. The heating plate 134 can heat the surface of the substrate 2 that needs to be coated in a targeted manner. The air inlet 136, the air flow channel 138 and the air outlet 137 can allow the process gas to pass evenly and parallelly from the surface of the substrate 2 that needs to be coated.

[0053] The carrier 13 has a plurality of process units arranged in the extension direction of the airflow channel 138 or perpendicular to the extension direction of the airflow channel 138. In other words, a carrier 13 can carry a plurality of wafer boats 135. Specifically, the process units can be arranged repeatedly or in an array. Alternatively, adjacent process units can be symmetrically arranged.

[0054] For example, in some embodiments, in combination Figure 2 and Figure 3 Two adjacent process units share the same heating plate 134, and the process units are symmetrically arranged with the heating plate 134 as an axis. In other words, the heating plate 134 is arranged between two adjacent process units. The heating plate 134 can heat the sides of the wafer boat 135 on both sides thereof in a targeted manner.

[0055] In some embodiments, one and only one side of the wafer boat 135 needs to be heated by the heating plate 134. In this case, two adjacent process units can be provided with the surfaces of the wafer boat 135 that need to be heated facing each other, and the heating plate 134 is provided between the two wafer boats 135, so as to achieve heating of the sides of the two adjacent wafer boats 135 that need to be heated by one heating plate 134. It should be noted that in this case, in the two process units that share the heating plate 134, the surfaces of the wafer boat 135 that need to be heated are arranged face to face. However, one of the two process units that share the heating plate 134 and the adjacent process unit that is away from the other process unit (that is, two process units that are not symmetrical with the heating plate 134 as the axis), the wafer boats 135 therein are arranged back to back, that is, the sides of the two surfaces that need to be heated are arranged opposite to each other. Optionally, the wafer boats 135 in the process units that are not symmetrical with the heating plate 134 as the axis of symmetry can be arranged in abutment with each other. The process units arranged in the above manner can, on the one hand, share the heating plate 134, thereby improving the utilization rate of the heat of the heating plate 134. On the other hand, the side of the wafer boat 135 opposite to the side to be coated can be shielded by the adjacent wafer boat 135, thereby playing a shielding role, and no additional components such as the side plate 133 are required.

[0056] Among them, for the process unit with the heating plate 134 as the symmetry axis, since the width of the heating plate 134 is smaller than the width of the wafer boat 135, the air inlet 136, the air outlet 137 and the air flow channel 138 formed in the above manner are not located at the center of the process unit, but are located at the part of the process unit close to the heating plate 134. For the two process units with the heating plate 134 as the symmetry axis, the air inlet 136, the air outlet 137 and the air flow channel 138 in the two process units are arranged in a manner close to each other, which also facilitates the centralized air intake of the deposition device 1 to reduce the length of the flow channel.

[0057] In some embodiments, in combination Figure 4 and Figure 6, the door body 12 is provided with a spray array 121, and the spray array 121 is arranged corresponding to the air inlet 136. The spray array 121 can introduce the process gas evenly from the air inlet 136. The equipment body 11 is provided with a guide channel 112, and the guide channel 112 can be connected to the gas cabinet or the gas source, so as to introduce the process gas into the equipment body 11. When the door body 12 and the equipment body 11 are closed and matched, the guide channel 112 is connected to the spray array 121, and the guide channel 112 and the spray array 121 constitute an air inlet channel. Among them, although the spray array 121 is arranged on the door body 12, the guide channel 112 for introducing the process gas from the outside will not be arranged on the door body 12 that needs to be opened and closed frequently, but the guide channel 112 is arranged on the fixed equipment body 11. In this way, the opening and closing of the door body 12 can be facilitated, and the interference of the parts connected to the gas source on the opening and closing of the door body 12 can be reduced. Optionally, the spray array 121 includes a plurality of gas outlets arranged in an array and spray channels arranged corresponding to the plurality of gas outlets. The spray channels can connect the plurality of gas outlets in parallel and / or in series, thereby improving the consistency of the gas output. Furthermore, the spray array 121 can be symmetrically arranged on the door body 12, so as to better correspond to the two symmetrical process units with the heating plate 134 as the axis.

[0058] In some embodiments, in combination Figure 4 The door body 12 is formed with a boss toward the equipment body 11, and the spray array 121 is arranged on the boss. By setting the boss, the spray array 121 can be closer to the carrier 13, thereby reducing the leakage of the process gas and increasing the uniformity and parallelism of the process gas introduction.

[0059] In some embodiments, in combination Figure 4 and Figure 5 , at least two electrode feeding parts 140 are arranged at intervals in the part of the carrier 13 corresponding to the carrier body and the heating plate 134, and the two electrode feeding parts 140 are electrically connected to the heating plate 134. The heating plate 134 can be powered by feeding positive and negative electrodes into the two electrode feeding parts 140. Electrodes 111 are arranged at intervals in the process chamber 113, and the electrodes 111 are used to feed current to the carrier 13. The electrodes 111 are arranged corresponding to the electrode feeding parts 140. The electrode 111 can cooperate with the electrode feeding parts 140, so that after the carrier 13 is placed in the deposition device 1, the heating plate 134 can be powered by the deposition device 1.

[0060] Among them, the electrode feeding part 140 and the electrode 111 are arranged at intervals in the direction from the door body 12 to the device body 11. The part corresponding to the carrier body and the heating plate 134 is arranged at intervals with at least two electrode feeding parts 140, and the two electrode feeding parts 140 are electrically connected to the heating plate 134. One of the electrode 111 and the electrode feeding part 140 needs to be arranged in a protruding manner and the other needs to be arranged in a recessed manner. Through the cooperation of the two electrodes 111 and the two electrode feeding parts 140 arranged at intervals, in addition to being able to feed current, it can also play a positioning role in the placement of the carrier 13. Optionally, the outer side surface of the carrier 13 corresponding to the heating plate 134 can be provided with a guide groove, and the electrode feeding part 140 is arranged in the guide groove. And the electrode 111 is arranged to protrude from the bottom wall of the process chamber 113, so that during the placement process of the carrier 13, on the one hand, it can cooperate with the protruding electrode 111 through the guide groove, thereby achieving the guidance of placement. On the other hand, the two electrodes 111 and the two electrode feeding parts 140 arranged at intervals cooperate with each other to play a positioning role in placing the carrier 13 .

[0061] In summary, the carrier 13 can be detachably placed in the deposition device 1 for thin film deposition, and the deposition device 1 can feed current to the carrier 13 and can pass process gas through the air inlet 136 and the air outlet 137 of the carrier 13. Through this arrangement, the heating plate 134 is opposite to one side of the carrier boat 135 and is arranged at intervals. On the one hand, the heating plate 134 can centrally heat one side of the carrier boat 135, so that the side of the substrate 2 that needs to be coated can be centrally heated, thereby reducing the time required for preheating and heat conduction; on the other hand, the air flow channel 138 formed by the interval between the heating plate 134 and the carrier boat 135 can be used for process gas to flow through, so that the side of the carrier boat 135 facing the heating plate 134 can contact with the process gas, so that the surface of the substrate 2 that needs to be coated can interact with the process gas, and play a passivation effect of the coating. The present application can realize that the heating plate 134 concentrates the power heating on the cutting surface during the process, so that it quickly reaches the process temperature, and can realize preheating outside the cavity, shortening the process time. The airflow passing through the cutting surface is uniform and parallel, and the heating structure of the existing deposition equipment can be simplified.

[0062] The above are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A carrier, characterized in that: include: A carrier body having a mounting cavity; A heating plate, the heating plate being mounted on the carrier body; A wafer boat, which can be detachably placed in the installation cavity, the wafer boat having a receiving cavity for receiving the substrate, and the wafer boat is used to cover at least one side of the substrate; The heating plate and the wafer boat are opposite to each other and spaced apart, and an air flow channel is formed between the heating plate and the wafer boat; the carrier body has an air inlet and an air outlet, and the air flow channel connects the air inlet and the air outlet.

2. The carrier according to claim 1, characterized in that: At least one side of the wafer boat is open to expose at least one side of the substrate; At least one side of the wafer boat having the opening is arranged corresponding to the heating plate to form the air flow channel; Alternatively, the wafer boat has a plurality of open side surfaces which are arranged one-to-one corresponding to the heating plates to form a plurality of the airflow channels, and the airflow channels are connected in parallel or in series.

3. The carrier according to claim 1, characterized in that: The substrates in the wafer boat are stacked, and the side surfaces of the stacked substrates to be coated are exposed to the air flow channel, while the other surfaces of the stacked substrates are covered by the wafer boat.

4. The carrier according to claim 1, characterized in that: The carrier body includes a base plate and a block, at least two of the blocks are arranged opposite to each other on both sides of the base plate; the blocks and the base plate are arranged to form the installation cavity; the heating plate is installed on the base plate, and the air inlet and the air outlet are formed by the intervals between the heating plate and the blocks on both sides.

5. The carrier according to claim 1, characterized in that: The air inlet, the air flow channel and the air outlet are arranged on the same axis, the side of the wafer boat facing the heating plate is exposed in the air flow channel, and the other sides of the wafer boat are shielded by the carrier body.

6. The carrier according to claim 1, characterized in that: The wafer boat, the heating plate, the air inlet, the air flow channel and the air outlet constitute a process unit, and the carrier has a plurality of the process units arranged in the extension direction of the air flow channel or perpendicular to the extension direction of the air flow channel.

7. The carrier according to claim 6, characterized in that: Two adjacent process units share the same heating plate, and the process units are symmetrically arranged with the heating plate as an axis.

8. The carrier according to claim 1, characterized in that: At least two electrode feed-in parts are arranged at intervals at the part of the carrier body corresponding to the heating plate, and the two electrode feed-in parts are electrically connected to the heating plate.

9. The carrier according to claim 1, characterized in that: The air inlet and the air outlet are provided with flow equalizer plates.

10. The carrier according to any one of claims 1 to 9, characterized in that: A plurality of wafer boats are arranged in the installation cavity. The wafer boats and the heating plate form a plurality of airflow channels, and the airflow channels are connected in series and / or in parallel.

11. A deposition device, characterized in that: include: Equipment body, door body and carrier as described in any one of claims 1 to 10; The equipment body and the door body are surrounded to form a process cavity; The carrier is detachably placed in the process chamber. The deposition equipment includes an air inlet channel and an air outlet channel. The air inlet channel is arranged corresponding to the air inlet, and the air outlet channel is arranged corresponding to the air outlet.

12. The deposition device according to claim 11, characterized in that: The door body is provided with a spray array, and the spray array is arranged corresponding to the air inlet. The equipment body is provided with a guide channel. When the door body and the equipment body are closed and matched, the guide channel is connected to the spray array, and the guide channel and the spray array constitute the air inlet channel.

13. The deposition device according to claim 12, characterized in that: The door body is formed with a boss toward the equipment body, and the spray array is arranged on the boss.

14. The deposition device according to claim 11, characterized in that: At least two electrode feed-in parts are arranged at intervals in the part of the carrier body corresponding to the heating plate, and the two electrode feed-in parts are electrically connected to the heating plate; Electrodes are arranged in intervals in the process chamber, and the electrodes are arranged corresponding to the electrode feeding parts; Wherein, the electrode feeding part and the electrode are arranged at intervals in the direction from the door body toward the device body; the electrode is used to feed current to the carrier.

15. The deposition device according to any one of claims 11 to 14, characterized in that: A plurality of carriers are arranged in the process chamber, and the air flow channels in adjacent carriers are connected in series and / or in parallel.

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