ICP (Inductively Coupled Plasma) etching equipment capable of cooling

Abstract

The invention discloses ICP etching equipment capable of being cooled, the ICP etching equipment capable of being cooled is provided with a cooling space and at least one air outlet hole communicated with the cooling space, the ICP etching equipment capable of being cooled comprises an etching main body, a coil, a matcher, a shielding cover and a fan, the etching main body comprises a plasma generation part and an etching operation part, the plasma generation part and the etching operation part jointly form a processing space, the sectional dimension of the plasma generation part is gradually increased from top to bottom, and cooling air blown into the cooling space by the fan is blown to the plasma generation part to take away heat in the processing space and cool the coil. And the cooling air blown to the plasma generation part flows on the outer surface of the plasma generation part and is finally led out from the air outlet hole. According to the invention, the plasma generation part can be fully and rapidly cooled, a stable processing environment is provided for etching operation, and the process quality is ensured.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor manufacturing, and in particular to ICP etching equipment capable of cooling. Background Art

[0002] When etching semiconductors, ICP is required to excite plasma. Under the action of high-frequency electric fields, the coil and plasma reaction chamber will generate a lot of heat. Under high power, the local temperature will reach 300-400°C. If the heat dissipation is not timely, it will affect the process quality and even damage the process devices. Therefore, the heat dissipation efficiency determines the maximum power that the equipment can achieve, which in turn affects the process rate.

[0003] When designing most etching equipment, the fan is located above the etching body. The fan guides the cooling air toward the etching body to cool the etching body and the coil disposed above the etching body. In the process of the fan guiding the cooling air toward the etching body, most of the cooling air diffuses around the etching body, resulting in a relatively low utilization rate of the cooling air. In addition, the upper surface of the etching body is usually horizontally designed, and the cooling air impacts the upper surface of the etching body and loses kinetic energy, which reduces the fluidity of the cooling air, reduces the heat loss rate of the etching body, and has a poor heat dissipation effect. Summary of the invention

[0004] One advantage of the present invention is that it provides an ICP etching device that can be cooled. The present invention can fully and quickly dissipate heat from a plasma generating portion, thereby providing a stable processing environment for etching operations and ensuring process quality.

[0005] One advantage of the present invention is that it provides an ICP etching device that can cool down. The present invention can gather the cooling wind blown by the fan to the plasma generating part, effectively avoid the cooling wind from diffusing around the plasma generating part, and improve the utilization rate of the cooling wind.

[0006] One advantage of the present invention is that it provides an ICP etching device capable of cooling down. The present invention can fully and quickly dissipate heat from a coil, thereby extending the service life of the coil.

[0007] One advantage of the present invention is that it provides an ICP etching device that can be cooled. The present invention can increase the operating power of the ICP etching device that can be cooled by cooling the internal environment of the etching body and the coil, thereby improving the etching efficiency.

[0008] In order to achieve at least one of the above advantages of the present invention, the present invention provides an ICP etching device capable of being cooled, wherein the ICP etching device capable of being cooled has a cooling space and at least one air outlet connected to the cooling space, and the ICP etching device capable of being cooled comprises:

[0009] An etching body, wherein the etching body comprises a plasma generating part and an etching operation part, wherein the plasma generating part is integrally formed at the top of the etching operation part, wherein the plasma generating part and the etching operation part jointly form a processing space, wherein the plasma generating part forms a through port communicating with the processing space, wherein the through port is used to introduce gas into the processing space formed in the plasma generating part, wherein the processing space formed in the etching operation part is used for etching a wafer, wherein the cross-sectional size of the plasma generating part gradually increases from top to bottom, and the plasma generating part is implemented as a heat conductive material;

[0010] A coil, the coil is arranged on the etching body, the coil can be fed with a radio frequency signal, and the coil fed with the radio frequency signal generates a high-frequency electromagnetic field so that the gas introduced into the processing space formed in the plasma generating portion through the inlet generates plasma so as to etch the wafer formed in the processing space of the etching operation portion by the plasma;

[0011] A matcher, the matcher is connected in communication with the radio frequency generator, the matcher is used to adjust the radio frequency signal output by the radio frequency generator, the coil is connected in communication with the matcher, the matcher is used to pass the radio frequency signal to the coil;

[0012] A shielding cover is installed on the top of the etching operation part and covers the outside of the plasma generating part;

[0013] A fan is provided above the shielding cover, the shielding cover is used to gather the cooling wind guided by the fan, the coil is located in the cooling space, the fan corresponds to the plasma generating part and can introduce cooling wind into the cooling space, the cooling wind blown into the cooling space by the fan blows toward the plasma generating part to take away the heat in the processing space and cool the coil, and the cooling wind blown toward the plasma generating part flows on the outer surface of the plasma generating part and is finally discharged from the air outlet.

[0014] According to an embodiment of the present invention, the air outlet is located at the lower end of the shielding cover and corresponds to the bottom end of the plasma generating part, and the cooling wind flowing on the outer surface of the plasma generating part can be guided by the plasma generating part to the air outlet.

[0015] According to an embodiment of the present invention, the coil is sleeved on the plasma generating portion, and the size and shape of the coil match the plasma generating portion.

[0016] According to an embodiment of the present invention, the coil sleeved on the plasma generating portion covers a portion of the outer wall of the plasma generating portion.

[0017] According to an embodiment of the present invention, the coil sleeved on the plasma generating portion covers the outer wall of the plasma generating portion, and the heat formed in the processing space of the plasma generating portion can be transferred to the coil through the plasma generating portion.

[0018] According to an embodiment of the present invention, the shielding cover is made of a conductive material, and the shielding cover can shield radio frequency.

[0019] According to one embodiment of the present invention, the matcher is installed on the top of the shielding cover, the matcher has a channel connected to the cooling space, the fan can guide the cooling wind from one end of the channel away from the cooling space into the channel and guide it to the cooling space, and the fan is arranged in the channel or at the end of the channel.

[0020] According to an embodiment of the present invention, the fan is disposed in the channel, and the top of the shielding cover is open. At this time, the etching body, the matcher and the shielding cover together form the cooling space.

[0021] According to an embodiment of the present invention, the fan is inserted into the top wall of the shielding cover and is located at the end of the channel. At this time, the etching body, the shielding cover and the fan together form the cooling space.

[0022] According to an embodiment of the present invention, the operating speed of the fan is adjustable.

[0023] Compared with the prior art, the ICP etching equipment capable of cooling down of the present invention has the following technical effects:

[0024] 1. The present invention gathers the cooling wind guided by the fan, and uses the fan to guide the cooling wind to blow toward the plasma generating part with a cross-sectional size gradually increasing from top to bottom, so as to fully and quickly dissipate the heat of the plasma generating part, thereby providing a stable processing environment for the etching operation.

[0025] 2. The fan of the present invention guides the cooling wind to blow toward the plasma generating part with a cross-sectional size gradually increasing from top to bottom, so as to increase the contact surface between the cooling wind and the plasma generating part, improve the heat dissipation effect and improve the utilization rate of the cooling wind.

[0026] 3. The coil of the present invention is sleeved on the plasma generating part, so as to utilize the cooling wind flowing on the outer surface of the plasma generating part to cool the coil, so as to fully and quickly dissipate the heat of the coil and extend the service life of the coil.

[0027] 4. The present invention can improve the operating power of the ICP etching equipment capable of being cooled by cooling the internal environment of the etching body and the coil, thereby improving the etching efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 The schematic diagram of the structure of the ICP etching equipment capable of cooling down of the present invention is shown.

[0029] Figure 2 A structural cross-sectional view of the ICP etching equipment capable of cooling down according to the present invention is shown.

[0030] Reference numerals:

[0031] Cooling space 1001; air outlet 1002;

[0032] Etching body 10; processing space 101; plasma generating part 11; access port 1101; etching operation part 12; carrier 13;

[0033] Coil 20;

[0034] Matcher 30; channel 301;

[0035] Shielding cover 40;

[0036] Fan 50. DETAILED DESCRIPTION

[0037] The following description is used to disclose the present invention so that those skilled in the art can implement the present invention. The preferred embodiments described below are only examples, and those skilled in the art can think of other obvious variations. The basic principles of the present invention defined in the following description can be applied to other embodiments, variations, improvements, equivalents, and other technical solutions that do not deviate from the spirit and scope of the present invention.

[0038] Those skilled in the art should understand that, in the disclosure of the present invention, the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation. Therefore, the above terms should not be understood as limiting the present invention.

[0039] It is to be understood that the term "one" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the element may be multiple, and the term "one" should not be understood as a limitation on the quantity.

[0040] refer to Figure 1 to Figure 2According to a preferred embodiment of the present invention, an ICP etching device with a coolable temperature will be described in detail below. The ICP etching device with a coolable temperature includes an etching body 10, and the etching body 10 includes a plasma generating part 11 and an etching operation part 12. The plasma generating part 11 is integrally formed on the top of the etching operation part 12. The plasma generating part 11 and the etching operation part 12 together form a processing space 101. The plasma generating part 11 forms an inlet 1101 connected to the processing space 101. The inlet 1101 is used to introduce gas into the processing space 101 formed in the plasma generating part 11. The processing space 101 formed in the etching operation part 12 is provided for etching wafers.

[0041] The ICP etching device capable of lowering temperature further comprises a coil 20 and a matcher 30, wherein the coil 20 is arranged on the etching body 10, and the matcher 30 is connected in communication with the radio frequency generator, and the matcher 30 is used to adjust the radio frequency signal output by the radio frequency generator. The coil 20 is connected in communication with the matcher 30, and the matcher 30 can pass the radio frequency signal to the coil 20. The coil 20 to which the radio frequency signal is passed generates a high-frequency electromagnetic field so that the gas passed through the inlet 1101 into the processing space 101 formed in the plasma generating part 11 generates plasma so that the plasma etches the wafer formed in the processing space 101 of the etching operation part 12.

[0042] Those skilled in the art will appreciate that the plasma generated by the excitation of the gas in the processing space 101 formed in the plasma generating section 11 will continuously bombard the inner wall of the plasma generating section 11, generating a large amount of heat, and the coil 20 will generate heat when an RF signal is passed through it.

[0043] refer to Figure 1 to Figure 2 The ICP etching equipment with cooling function includes a shielding cover 40 and a fan 50. The shielding cover 40 is installed on the top of the etching operation part 12 and covers the outside of the plasma generating part 11. The fan 50 is arranged above the shielding cover 40. The shielding cover 40 is used to gather the cooling wind guided by the fan 50 to prevent the cooling wind from spreading from all sides and improve the utilization rate of the cooling wind.

[0044] The ICP etching device capable of cooling has a cooling space 1001, the coil 20 is located in the cooling space 1001, and the fan 50 corresponds to the plasma generating portion 11 and can introduce cooling air into the cooling space 1001. The ICP etching device capable of cooling has at least one air outlet 1002 in communication with the cooling space 1001, the air outlet 1002 is in communication with the cooling space 1001, and the air outlet 1002 is used to discharge the cooling air in the cooling space 1001 that completes the heat dissipation operation.

[0045] refer to Figure 2 , the cross-sectional size of the plasma generating part 11 gradually increases from top to bottom, and the plasma generating part 11 is implemented as a heat-conducting material. The cooling wind blown into the cooling space 1001 by the fan 50 blows toward the plasma generating part 11 to take away the heat in the processing space 101 and cool the coil 20. The cooling wind blown toward the plasma generating part 11 flows on the outer surface of the plasma generating part 11 and is finally led out from the air outlet 1002 to fully and quickly dissipate heat, provide a stable processing environment for the etching operation, ensure the process quality, and increase the contact surface between the cooling wind and the plasma generating part 11, improve the heat dissipation effect and improve the utilization rate of the cooling wind. In addition, by cooling the internal environment of the etching body 10 and the coil 20, the operating power of the ICP etching equipment that can be cooled can be increased, thereby improving the etching efficiency.

[0046] Preferably, the shielding cover 40 and the etching operation part 12 jointly form the air outlet 1002 .

[0047] In one embodiment, the air outlet hole 1002 is formed in the shielding cover 40 .

[0048] Preferably, four air outlet holes 1002 are provided, and the four air outlet holes 1002 are located around the plasma generating part 11, so as to discharge the cooling air for completing the heat dissipation operation in the cooling space 1001 in multiple directions, so as to accelerate the fluidity of the cooling air in the cooling space 1001 and improve the heat dissipation effect.

[0049] Preferably, the air outlet 1002 is located at the lower end of the shielding cover 40 and corresponds to the bottom end of the plasma generating part 11, so that the cooling wind flowing on the outer surface of the plasma generating part 11 can be guided by the plasma generating part 11 and directed to the air outlet 1002, so that the cooling wind that completes the heat dissipation operation can be quickly discharged.

[0050] It is worth mentioning that the coil 20 is sleeved on the plasma generating part 11, and the size and shape of the coil 20 match the plasma generating part 11. In this way, the cooling wind blowing toward the plasma generating part 11 flows on the outer surface of the coil 20 to fully and quickly dissipate the heat of the coil 20, thereby extending the service life of the coil 20.

[0051] Preferably, the coil 20 sleeved on the plasma generating part 11 covers part of the outer wall of the plasma generating part 11. At this time, part of the plasma generating part 11 can be in direct contact with the cooling wind in the cooling space 1001, so that the heat formed in the processing space 101 of the plasma generating part 11 can be quickly dissipated, thereby improving the heat dissipation effect.

[0052] In one embodiment, the coil 20 sleeved on the plasma generating portion 11 covers the outer wall of the plasma generating portion 11, and the heat formed in the processing space 101 of the plasma generating portion 11 can be transferred to the coil 20 through the plasma generating portion 11, so as to dissipate heat by using cooling wind flowing on the outer surface of the coil 20.

[0053] Preferably, the shielding cover 40 is made of a conductive material, and the shielding cover 40 can shield radio frequency to prevent high-frequency electromagnetic waves from causing harm to the human body.

[0054] Preferably, the shielding cover 40 is made of aluminum alloy.

[0055] refer to Figure 1 to Figure 2 Preferably, the matcher 30 is installed on the top of the shielding cover 40, and the matcher 30 has a channel 301 connected to the cooling space 1001. The fan 50 can guide the cooling wind from one end of the channel 301 away from the cooling space 1001 to enter the channel 301 and guide it to the cooling space 1001. The fan 50 is arranged in the channel 301 or at the end of the channel 301. At this time, the fan 50 does not occupy external space, effectively reducing the overall size.

[0056] It is worth mentioning that by arranging the matcher 30 and the fan 50 at the top of the shielding cover 40 and arranging the four air outlets 1002 around the plasma generating section 11, the cooling wind that completes the heat dissipation operation can be quickly discharged from the four sides of the plasma generating section 11, so that the cooling wind can flow quickly and evenly, ensuring that the plasma generating section 11 and the coil 20 can be quickly and evenly cooled. Compared with the prior art, it is effectively avoided that the matcher 30 and / or the fan 50 is arranged on the side of the plasma generating section 11 to affect the flow of cooling wind.

[0057] Preferably, the fan 50 is disposed in the channel 301 , and the top of the shielding cover 40 is open. At this time, the etching body 10 , the matcher 30 and the shielding cover 40 together form the cooling space 1001 .

[0058] As a deformable method, the fan 50 is inserted into the top wall of the shielding cover 40 and is located at the end of the channel 301 . At this time, the etching body 10 , the shielding cover 40 and the fan 50 together form the cooling space 1001 .

[0059] In one embodiment, the fan 50 and the matcher 30 are adjacently arranged at the top of the shielding cover 40, and the fan 50 is inserted into the top wall of the shielding cover 40. At this time, the etching body 10, the shielding cover 40 and the fan 50 jointly form the cooling space 1001, and the channel 301 is not set.

[0060] In another embodiment, the top of the shielding cover 40 is open, and the matcher 30 and the fan 50 are arranged side by side on the top of the shielding cover 40. At this time, the etching body 10, the matcher 30, the shielding cover 40 and the fan 50 jointly form the cooling space 1001, and the channel 301 is not set.

[0061] It is worth mentioning that the operating speed of the fan 50 is adjustable to regulate the internal temperature of the processing space 101 and the temperature of the coil 20, so as to effectively avoid excessive heat affecting processing while saving energy.

[0062] refer to Figure 2 The etching body 10 further includes a carrier 13 , which is installed in the processing space 101 formed in the etching operation part 12 and corresponds to the plasma generating part 11 , and the carrier 13 is used to carry the wafer.

[0063] It should be understood by those skilled in the art that the embodiments of the present invention described above and shown in the accompanying drawings are only examples and do not limit the present invention. The advantages of the present invention have been fully and effectively achieved. The functional and structural principles of the present invention have been demonstrated and explained in the embodiments, and the embodiments of the present invention may be deformed or modified in any way without departing from the principles.

Claims

1. ICP etching equipment capable of cooling, characterized in that: The ICP etching device capable of cooling has a cooling space and at least one air outlet connected to the cooling space, and the ICP etching device capable of cooling includes: An etching body, wherein the etching body comprises a plasma generating part and an etching operation part, wherein the plasma generating part is integrally formed at the top of the etching operation part, wherein the plasma generating part and the etching operation part jointly form a processing space, wherein the plasma generating part forms a through port communicating with the processing space, wherein the through port is used to introduce gas into the processing space formed in the plasma generating part, wherein the processing space formed in the etching operation part is used for etching a wafer, wherein the cross-sectional size of the plasma generating part gradually increases from top to bottom, and the plasma generating part is implemented as a heat conductive material; A coil, the coil is arranged on the etching body, the coil can be fed with a radio frequency signal, and the coil fed with the radio frequency signal generates a high-frequency electromagnetic field so that the gas introduced into the processing space formed in the plasma generating portion through the inlet generates plasma so as to etch the wafer formed in the processing space of the etching operation portion by the plasma; A matcher, the matcher is connected in communication with the radio frequency generator, the matcher is used to adjust the radio frequency signal output by the radio frequency generator, the coil is connected in communication with the matcher, the matcher is used to pass the radio frequency signal to the coil; A shielding cover is installed on the top of the etching operation part and covers the outside of the plasma generating part; A fan is provided above the shielding cover, the shielding cover is used to gather the cooling wind guided by the fan, the coil is located in the cooling space, the fan corresponds to the plasma generating part and can introduce cooling wind into the cooling space, the cooling wind blown into the cooling space by the fan blows toward the plasma generating part to take away the heat in the processing space and cool the coil, and the cooling wind blown toward the plasma generating part flows on the outer surface of the plasma generating part and is finally discharged from the air outlet.

2. The ICP etching equipment capable of cooling according to claim 1, characterized in that: The air outlet is located at a lower end of the shield cover and corresponds to a bottom end of the plasma generating portion, and cooling wind flowing on an outer surface of the plasma generating portion can be guided by the plasma generating portion to the air outlet.

3. The ICP etching equipment capable of cooling according to claim 1 or 2, characterized in that: The coil is sleeved on the plasma generating portion, and the size and shape of the coil match the plasma generating portion.

4. The ICP etching equipment capable of cooling according to claim 3, characterized in that: The coil sleeved on the plasma generating part covers a part of the outer wall of the plasma generating part.

5. The ICP etching equipment capable of cooling according to claim 3, characterized in that: The coil sleeved on the plasma generating portion covers an outer wall of the plasma generating portion, and heat formed in the processing space of the plasma generating portion can be transferred to the coil through the plasma generating portion.

6. The ICP etching equipment capable of cooling according to claim 1, characterized in that: The shielding cover is made of a conductive material and can shield radio frequency.

7. The ICP etching equipment capable of cooling according to claim 1, characterized in that: The matcher is installed on the top of the shielding cover, and the matcher has a channel connected to the cooling space. The fan can guide the cooling wind from one end of the channel away from the cooling space into the channel and guide it to the cooling space. The fan is set in the channel or at the end of the channel.

8. The ICP etching equipment capable of cooling according to claim 7, characterized in that: The fan is arranged in the channel, and the top of the shielding cover is open. At this time, the etching body, the matcher and the shielding cover jointly form the cooling space.

9. The ICP etching equipment capable of cooling according to claim 7, characterized in that: The fan is inserted into the top wall of the shielding cover and is located at the end of the channel. At this time, the etching body, the shielding cover and the fan together form the cooling space.

10. The ICP etching equipment capable of cooling according to claim 1, characterized in that: The running speed of the fan is adjustable.

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