Wireless system package

Abstract

The invention relates to a device (100) having a substrate (104), the substrate comprising opposing first (124) and second (126) surfaces, the first surface comprising a metal pad (128); the dielectric layer is positioned between the first surface and the second surface; and an opening (134) extending through the dielectric layer and connected between the first surface and the second surface, the opening including a first ridge structure and a second ridge structure, each of the first and second ridge structures extending in a uniform cross-section along the opening.

Description

Background Art

[0001] The wireless system may include an integrated circuit and an antenna. The integrated circuit may transmit or receive a radio signal via the antenna. The wireless system may also include a waveguide coupled between the integrated circuit and the antenna to transmit the radio signal. In the case where the wireless system transmits / receives radio signals of multiple frequency bands / channels, the wireless system may include multiple antennas for transmitting / receiving radio signals of multiple frequency bands / channels or separating received radio signals from transmitted radio signals. The wireless system may also include multiple waveguides coupled between the integrated circuit and the multiple antennas. Different waveguides may be isolated from each other to reduce cross-coupling of radio signals between the waveguides. However, the degree of isolation may be limited by various factors, such as the form factor of the wireless system. Summary of the invention

[0002] In one example, there is a device including a substrate, wherein the substrate includes a first surface and a second surface opposite to each other, the first surface including a metal pad, a dielectric layer located between the first surface and the second surface, and an opening extending through the dielectric layer and connected between the first surface and the second surface, the opening including a first ridge structure and a second ridge structure, each of the first ridge structure and the second ridge structure extending along the opening with a uniform cross-section.

[0003] In another example, there is a device including a substrate. The substrate includes a first surface and a second surface opposite each other, the first surface including a metal pad; a first metal layer, the first metal layer is located on the second surface, the first metal layer includes an opening; an interconnect network, the interconnect network is located between the first surface and the second surface and coupled to the metal pad; a dielectric layer, the dielectric layer is located between the first surface and the second surface and surrounds the interconnect network, the dielectric layer includes a first dielectric material; a cavity, the cavity is located in the dielectric layer, the cavity extends from the opening, the cavity includes a second dielectric material; and a second metal layer, the second metal layer covers the side surface and the bottom surface of the cavity, the second metal layer is bonded to the first metal layer.

[0004] Other aspects are also described and claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1A , Figure 1B and Figure 1C is a schematic diagram showing various views of an example wireless system.

[0006] Figure 2A and Figure 2Bis a schematic diagram showing a plan view of an example ridged waveguide.

[0007] Figure 2C is a schematic diagram showing a plan view of an example rectangular waveguide.

[0008] Figure 2D To show Figures 2A to 2C Figure 2. Characteristics of an example waveguide.

[0009] Figure 3A , 3B , 4A and 4B are schematic diagrams showing plan views of example waveguides.

[0010] Figure 5A and Figure 5B are schematic diagrams showing a plan view and a cross-sectional view, respectively, of an example isolation structure abutting a waveguide.

[0011] Fig. 6A and Figure 6B are schematic diagrams showing a plan view and a cross-sectional view, respectively, of an example isolation structure abutting a waveguide.

[0012] Figure 7 , 8 9 are schematic diagrams showing cross-sectional views of example wireless systems.

[0013] Fig. 10A and 10B is a schematic diagram showing a cross-sectional view of a corresponding example wireless system.

[0014] Fig.11A , 11B , 11C and 11D are schematic diagrams showing various views of an example printed circuit board (PCB) substrate for a wireless system.

[0015] Fig. 12A and 12B is a schematic diagram showing various views of an example 3D antenna for a wireless system.

[0016] Fig.13 is a schematic diagram showing a perspective view of an example PCB substrate and an example 3D antenna for a wireless system.

[0017] The same reference numerals or other figure indicators are used in the drawings to indicate the same or similar (structurally and / or functionally) features. In addition, some of the drawings include dimensional indicators showing x, y, and z dimensions. References to these dimensions and corresponding directionality (e.g., top, bottom, up, down, etc.) are intended to aid orientation and are not necessarily limiting. DETAILED DESCRIPTION

[0018] Figure 1A1 is a schematic diagram showing a simplified cross-sectional view of a wireless system 100 according to some examples. In some examples, the wireless system 100 can be configured to transmit and / or receive millimeter wave signals (e.g., in a frequency range of 30 GHz to 300 GHz). The wireless system 100 includes a packaged semiconductor device 102, a system substrate 104, and a 3D antenna 106, wherein the system substrate 104 is located between the packaged semiconductor device 102 and the 3D antenna 106 and interfaces with the packaged semiconductor device and the antenna.

[0019] In some examples, the packaged semiconductor device 102, the system substrate 104, and the 3D antenna 106 can be stacked to form a launch-on-package (LoP). Specifically, the packaged semiconductor device 102 includes an integrated circuit (IC) 108, which can have both transmission and reception functions. IC 108 is partially or fully encapsulated, wherein the example shown includes IC 108 covered by an encapsulation layer 112 located on a substrate 110. Encapsulation layer 112 can include plastic, ceramic, resin, or other suitable materials. Substrate 110 has a surface 114. Portions of a metal layer 115 are along surface 114, as are patches 116 and patches 118. Each of patches 116 and 118 is connected to IC 108 via corresponding signal paths 120 and 122, wherein, as an example, signal paths 120 and 122 can be formed as a combination of metal layer portions and vias or strip lines. Signal paths 120 and 122 facilitate wave transmission. For example, signal path 120 may be a transmission path along which IC 108 transmits a first electrical signal for transmission through patch 116, thereby converting a mode propagating on signal path 120 into a waveguide mode. Similarly, signal path 122 may be a reception path for receiving a second electrical signal, which is received by patch 118 and transmitted to IC 108. Patch 116 may receive the first electrical signal from IC 108 through signal path 120, convert the first electrical signal into a first radio signal, and transmit the first radio signal. Patch 118 may receive the second radio signal, convert the second radio signal into a second electrical signal, and transmit the second electrical signal to IC 108 through signal path 122.

[0020] The packaged semiconductor device 102 can be mounted on a system substrate 104, which can be configured as part of a LoP. The system substrate 104 has opposing surfaces 124 and 126. Surface 124 faces surface 114 (and / or metal layer 115 and patches 116 and 118) of the packaged semiconductor device 102. The system substrate 104 includes an electrically insulating material located between surfaces 124 and 126. The electrically insulating material may include a dielectric material, a fiberglass material, in one or more layers, and the like. In some instances, the system substrate 104 may include a printed circuit board (PCB). The system substrate 104 may include various conductors or conductive areas (e.g., metal pads) located on surfaces 124 and 126 and a network of interconnects (e.g., traces, vias, etc.) coupled between some of these areas and surrounded by electrically insulating material. For simplicity, the conductors and interconnects are not shown in FIG. Figure 1A The packaged semiconductor device 102 may be mounted to the system substrate 104 via solder balls (or solder pillars) 128, which may form part of a ball grid array (BGA).

[0021] The system substrate 104 further includes openings 130 and 132 extending through the thickness of the system substrate 104 (e.g., in the z dimension) from the surface 124 to the surface 126, such as may be filled with air. The opening 130 may be aligned with the patch 116, and the opening 132 may be aligned with the patch 118. In addition, the opening 130 has a sidewall 138, and the opening 132 has a sidewall 140, wherein the sidewalls 138 and 140 may be metallized, as further described below. The opening 130 may provide (or may be a part of) a waveguide 134 for transmitting radio signals to or from the patch 116. The opening 132 may provide (or may be a part of) a waveguide 136 for transmitting radio signals to or from the patch 118. In various examples, the openings 130 and 132 can each have a specific and uniform cross-sectional shape through the thickness of the system substrate 104 between the surfaces 124 and 126 .

[0022] In addition, the 3D antenna 106 can be mounted on or relative to the system substrate 104. The 3D antenna 106 can have opposing surfaces 142 and 144, wherein the surface 142 faces the surface 126 of the system substrate 104. The 3D antenna 106 can include, for example, a structure formed by molding or 3D printing of a material (e.g., plastic), and the surfaces of the 3D antenna 106 (including the surfaces 142 and 144) can be metallized (or covered with a metal layer). In some examples, the 3D antenna 106 can also be formed as a metal structure. The 3D antenna 106 can be based on various technologies (e.g., Figure 1A142). The 3D antenna 106 may be mounted on the system substrate 104 by screws 146 shown. In some examples, the 3D antenna 106 may be glued to the surface 126 of the system substrate 104 by an adhesive. There may be a gap 148 (e.g., an air gap or a gap defined by the thickness of the adhesive) between the surfaces 126 and 142. The 3D antenna 106 may also include additional parts, or may be attached to additional parts, which are not shown to simplify the illustration and discussion.

[0023] The 3D antenna 106 may include openings 150 and 152 formed through the thickness (e.g., in the z dimension) of the 3D antenna 106. Each of the openings 150 and 152 may extend from the surface 142 to the surface 144. The opening 150 may have a sidewall 158 covered by metal, and the opening 152 may have a sidewall 160 covered by metal. The opening 150 may be aligned with the opening 130 of the system substrate 104, and the opening 150 may provide a waveguide 154 that is connected to the waveguide 134. In addition, the opening 152 may be aligned with the opening 132 of the system substrate 104, and the opening 152 may provide a waveguide 156 that is connected to the waveguide 136. In various examples, the openings 150 and 152 may each have a specific and uniform cross-sectional shape through the thickness of the 3D antenna 106 located between the surfaces 142 and 144. The cross-sectional shape and area of ​​opening 150 may match the cross-sectional shape and area of ​​opening 130 to improve the continuity of the connection between waveguides 134 and 154. Additionally, the cross-sectional shape and area of ​​opening 152 may match the cross-sectional shape and area of ​​opening 132 to improve the continuity of the connection between waveguides 136 and 156.

[0024] The LoP package of the wireless system 100 formed by stacking the packaged semiconductor device 102, the system package 104, and the 3D antenna 106 may provide a reduced form factor or reduced footprint. However, the LoP package may pose challenges to the isolation between the waveguides 134 and 136 and between the waveguides 154 and 156. Specifically, a radio signal propagating in a waveguide (e.g., waveguide 134) may propagate to an adjacent waveguide (e.g., waveguide 136) through the gap 148, which may promote cross-coupling between the waveguides. The distance / width of the gap 148 may affect the power and degree of cross-coupling of the radio signal propagating along the gap 148, and the distance / width may vary due to tolerances and / or specifications in the assembly of the LoP package. In addition, in order to reduce the form factor of the LoP package, adjacent waveguides may be close to each other, which may reduce the propagation distance of the radio signal between adjacent waveguides and further aggravate the cross-coupling.

[0025] Figure 1B Shows from Figure 1A 1. A perspective view of a metal layer 115 and an example of a wireless system 100 along a surface 114, which is only a partial view so that only a single patch 116 is shown. The patch 116 may be square or rectangular, with a length l. patch and width w patch , where for example, l patch =0.82mm, and width w patch =0.98 mm. The metal layer 115 provides a border surrounding the patch 116, the border having a dimension l border and w border , where for example, l border =1.11mm, and width w border = 2.15 mm. The border and patch 116 are surrounded by an array of solder balls 128, which, for example, number five in the y dimension and four in the x dimension. The patch 116 may also be generally surrounded by ground vias 162. Finally, the signal path 120 is shown as including a line 164 and a via 166.

[0026] Figure 1C An example of a wireless system 100 for improving isolation is shown. Figure 1C In addition to the patches 116 and 118, the packaged semiconductor device 102 may also include patches 176 and 178. The closest adjacent patches (and their corresponding waveguides in communication therewith) are separated by a distance d. Based on the orientation of the main axis (the longest symmetric positioning axis) of the corresponding patch, each of the patches 116, 118, 176 and 178 can transmit a radio signal having a specific polarization axis. For example, the main axis of patch 116 is orthogonal to the main axis of patch 118, and accordingly, the corresponding signals from these patches are cross-polarized relative to each other. With such an arrangement, a radio signal propagated from one patch and a waveguide (e.g., patch 116 and waveguide 134) can have a polarization axis orthogonal to the polarization axis of the radio signal in the adjacent patch and waveguide (e.g., patch 118 and waveguide 136). Therefore, a radio signal in one waveguide can be rejected by the patch on the adjacent waveguide when leaking into the adjacent waveguide, and the cross-coupling between adjacent waveguides can be reduced. However, the cross-polarization arrangement may increase the spacing between the patch and the waveguide and increase the footprint of the wireless system 100 .

[0027] Figure 2A is a plan view of an example waveguide 200 that may facilitate isolation of cross-coupling of radio signals. Figure 2A and 2BThe same view of the waveguide 200 is shown, but a different set of labels are used to represent different features. In some examples, the waveguide 200 can be the waveguide 134 / 136 of the system substrate 104. In some examples, the waveguide 200 can also be the waveguide 154 / 156 of the 3D antenna 106. Figure 2A A view of the cross-sectional shape of the waveguide 200 at a specific point along the thickness of the system substrate 104 or 3D antenna 106 is shown.

[0028] refer to Figure 2A , the waveguide 200 may include an opening 202, which may be produced by drilling, milling, a combination of both, or some other technique. The footprint of the waveguide 200 may have a first dimension (e.g., in the x-dimension) and a second dimension (e.g., in the y-dimension), the first dimension having a length L1, and the second dimension having a length L2. By way of reference and example only, L1 may be 2.20 mm, and L2 may be 1.11 mm. In various examples, the values ​​of L1 and L2 may be determined, for example, using numerical approximation or simulation (e.g., full-wave simulation). Additional considerations for determining L1 and L2 may be found in Wolfgang JR Hoefer and Miles N. Burton, "Closed-Form Expressions for the Parameters of Finned and Ridged Waveguides," IEEE Transactions On Microwave Theory and Techniques, Vol. MTT-30, No. 12, December 1982. The opening 202 may include planar sidewalls 206, 208, 210, and 212 on four respective sides of the opening 202.

[0029] Waveguide 200 also includes ridges 214 and 216 that further provide a cross-sectional shape (perpendicular to the z dimension) of opening 202. Each of ridges 214 and 216 may extend along the thickness of system substrate 104 or 3D antenna 106 (e.g., in the z dimension of the previous figures). Ridge 214 may have a width w ridge (eg, in the x-dimension), and may extend away from sidewall 206 (eg, in the y-dimension) toward sidewall 208 by a distance h ridge In addition, the ridge 216 may have a width w ridge and may extend away from sidewall 208 (also in the y dimension) toward sidewall 206 by a distance h ridge As with L1 and L2 described above, w ridgeand h ridge The value of can be determined, for example, by simulation and also taking into account the "Closed Form Expression of Parameters of Finned and Ridged Waveguides" incorporated above. By reference only and in one example, w ridge =0.5mm, and h ridge = 0.2 mm. Thus, the ridges 214 and 216 can protrude inwardly and create a restricted portion 230 of the opening 202 (see Figure 2B ), the length m of the restricted portion in a specific dimension (for example, in the y dimension) void Decrease, where m void =L2–2*(h ridge ). The restricted portion 230 of the opening 202 can be located between two unrestricted portions 232 and 234 of the opening 202, each of which has a length L2 along a particular dimension (e.g., the y dimension). Figure 2A In an example, ridge 214 may have planar surfaces 242 , 244 , and 246 , ridge 216 may have planar surfaces 252 , 254 , and 256 , and opening 202 may include only planar sidewalls.

[0030] Ridges 214 and 216 can facilitate isolation between adjacent waveguides by reducing the footprint of the waveguides to transmit radio signals of a particular frequency band. As the footprint of the waveguides is reduced, the separation distance between adjacent waveguides (e.g., by Figure 1C The distance d in ) can be increased within a given footprint of the wireless system 100. The increased separation can improve isolation and reduce cross-coupling between adjacent waveguides. In some instances, the increased separation allows for a co-polarization arrangement in which the respective major axes of the patches are parallel (thus, co-polarized), which can further reduce the footprint of the wireless system 100.

[0031] Specifically, refer to Figure 2D , which shows the waveguide behavior across frequency on its horizontal axis and γ (propagation constant) on its vertical axis, and Figure 2C This behavior of the waveguide 250 shown in FIG. 2 having a rectangular cross-sectional area and without ridges 214 and 216 is similar to Figure 2A and 2B The behavior of the waveguide 200 is compared. Figure 2D As shown, Figure 2C The cutoff frequency f of the waveguide 250 may be related to the waveguide 250 dimensions L3 and L4 of the waveguide as follows:

[0032]

[0033] With ridges 214 and 216, the size of waveguide 200 can be reduced relative to waveguide 250 while maintaining a similar cutoff frequency f. In one example, for similar cutoff frequencies, the footprint of waveguide 250 is L3 = 2.55 mm x L4 = 1.11 mm, and the footprint of waveguide 200 is L1 = 2.20 mm x L2 = 1.11 mm, which represents a reduction in footprint of approximately 14%.

[0034] The ridge positioning and number of ridges may also vary between instances. In one instance, due to Figure 2A Each of the ridges 214 and 216 is shown positioned at the same point along its respective planar sidewalls 206 and 208 in the x-dimension, so that the first ridge 214 and the second ridge 216 are positioned directly opposite each other. Further, in one example, and as Figure 2A As shown, ridges 214 and 216 may be aligned along a centerline 218 of opening 202, and the cross-sectional area of ​​opening 202 may be symmetric about centerline 218. Further, in some examples, waveguide 200 may include a single ridge (eg, one of ridges 214 or 216).

[0035] The ridge dimensions can be configured to achieve a specific set of waveguide properties, including cutoff frequency and bandwidth. As described above, the lengths of L1 and L2 can set the cutoff frequency and bandwidth of the waveguide in its fundamental mode. Further, h ridge The cutoff frequency of the fundamental mode can be strongly controlled, so h ridge The larger the w is, the smaller the cutoff frequency is, and vice versa. ridge It can also shift the cutoff frequency, but not as well as h ridge So strong. In addition, w ridge The value of can be inversely proportional to the cutoff frequency. In addition, m void is generated by adjusting these other considerations, and is therefore obtained by L2, h ridge and w ridge generated.

[0036] Figure 3A and 3B is a plan view of another example waveguide 300, as Figure 2A / 2B illustrates a possible implementation of a waveguide 200 having a ridge in the opening 202 taking into account milling and drilling of the waveguide shape. Figure 3A and 3B The same cross-sectional view of the waveguide 300 is shown but different labels are used to represent different features. In some examples, the waveguide 300 can be the waveguide 134 / 136 of the system substrate 104. In some examples, the waveguide 300 can also be the waveguide 154 / 156 of the 3D antenna 106. Figure 3A and3B The cross-sectional shape of the waveguide 300 at a specific point along the thickness of the system substrate 104 or 3D antenna 106 is shown.

[0037] The footprint of the waveguide 300 is L1 x L2. The waveguide 300 includes an opening 202 and ridges 214 and 216. In the example of FIG. 3 , the opening 202 may have curved sidewalls 302 and 304 that define circular portions 312 and 314 of the opening 202. The ridge 214 has curved surfaces 316 and 318 extending from the curved sidewalls 302 and 304, respectively, and a top surface 320 coupled between the curved surfaces 316 and 318. The ridge 216 has surfaces 326 and 328 extending from the curved sidewalls 302 and 304, respectively, and a top surface 330 coupled between the curved surfaces 326 and 328. The ridges 214 and 216 may define a confined portion 332 of the opening 202 located between the circular portions 312 and 314 ( FIG. 3GB ). In Figure 3A and 3B In an example of , both top surfaces 320 and 330 can be planar, and the corresponding width of each top surface (eg, in the x dimension) can define w ridge Further, the distance between the top surface (eg, top surface 330) and the closest parallel tangent line to the circular region 312 / 314 (eg, tangent line 340) may define h ridge The diameter of each of the circular regions 312 and 314 may be less than 0.5*L1. The opening 202 may be symmetrical along the centerline 218.

[0038] Figure 4A and 4B is a plan view of another example waveguide 400, again as Figure 2A / 2B illustrates a possible implementation of a waveguide 200 having ridges 214 and 216 in the opening 202 taking into account milling and drilling of the waveguide shape. Figure 4A and 4B The same cross-sectional view of waveguide 400 is shown but with different sets of labels used to represent different features. Figure 4A and 4B The cross-sectional shape of the waveguide 400 at a specific point along the thickness of the system substrate 104 or the 3D antenna 106 is shown. In some examples, the waveguide 400 can be the waveguide 134 / 136 of the system substrate 104. In some examples, the waveguide 400 can also be the waveguide 154 / 156 of the 3D antenna 106.

[0039] refer to Figure 4A, the footprint of waveguide 400 may be L1 x L2. Waveguide 400 includes opening 202 and ridges 214 and 216. Waveguide 400 includes curved sidewalls 402, 404 and a planar sidewall 406 defining an elliptical region 408 of opening 202. Waveguide 400 also includes curved sidewalls 412, 414 and a planar sidewall 416 defining an elliptical region 418 of opening 202. Ridges 214 and 216 may define a restricted region 420 of opening 202. Ridge 214 includes a top surface 422, and ridge 216 includes a top surface 424. The distance between the nearest linear boundaries of elliptical regions 408 and 418 may define w ridge Additionally, the distance between the top surface (eg, top surface 424) and the closest parallel tangent line to the elliptical region 408 / 418 (eg, tangent line 440) may define h ridge The opening 202 may be symmetrical along the centerline 218 .

[0040] Figure 5A and Figure 5B is a schematic diagram showing a plan view and a cross-sectional view of an example isolation structure 500 surrounding or abutting a waveguide (such as one of the waveguides 138 , 140 , 154 , 156 , 200 , 300 , and 400 ). Figure 5A is a plan view, and Figure 5B 148. The isolation structure 500 may be a portion of the system substrate 104 and have a surface 502 that interfaces with the gap 148. The isolation structure 500 may include an opening 504 on the surface 502 and a cavity 506 extending from the opening 504. The cavity 506 has a bottom surface 508 and a sidewall 509. The cavity 506 or its sidewall 509 may abut the opening 510 of the waveguide. The bottom surface 508 and the sidewall 509 may be covered by a metal layer. In some examples, the cavity 506 may be filled with an electrically insulating material (e.g., a dielectric material).

[0041] exist Figure 5A and Figure 5B In the example of , the cavity 506 can be configured as a shorting stub for capturing the radio signal propagating along the gap 148 to prevent (or attenuate) the cross coupling of the radio signal between adjacent waveguides. The shorting stub can provide a propagation distance equal to an odd multiple (e.g., 1, 3, or 5) of a quarter wavelength (λ / 4) of the radio signal before the radio signal is reflected. Figure 5A and Figure 5BIn an example of , the depth D of cavity 506 can be equal to an odd multiple of λ / 4. Radio signals outside opening 510 can propagate through gap 148 and enter cavity 506 through opening 504. The radio signal can propagate in a vertical direction (e.g., along the z dimension) and can be reflected at bottom surface 508, which can be covered by a metal layer and provide a short-circuit terminal of the pile. The reflected radio signal can be superimposed with the incident radio signal. The depth D of cavity 506 can set the phase difference between the reflected radio signal and the incident radio signal to an odd multiple of λ / 4. Destructive interference can occur, and the radio signal can be captured and blocked from entering the abutting waveguide, which can reduce cross-coupling between adjacent waveguides.

[0042] In some examples, the opening 504 / cavity 506 can extend along one side of the opening 510 to provide isolation between two adjacent waveguides in one direction. Figure 5A , the opening 504 / cavity 506 may extend around the opening 510 of the waveguide (e.g., in the form of a trench) to provide isolation between adjacent waveguides in multiple directions. Figure 5A and Figure 5B In the embodiment of the present invention, the opening 504 / cavity 506 may have a rectangular cross-sectional shape, and the isolation structure 500 may include a trench having a rectangular profile. Fig. 6A and Figure 6B In the embodiment, the waveguide may include ridges 214 and 216 that define the cross-sectional shape of the opening 602, and the groove provided by the opening 504 / cavity 506 may have a profile that matches the shape of the opening 602. In an alternative, the shape of the opening 504 / cavity 506 does not necessarily need to match the shape of the opening 602, as will be described later by Fig.13 As shown in the example.

[0043] FIG. 5A to FIG. 6B The isolation structures 500 and 600 may be implemented as part of the system substrate 104 or as part of the 3D antenna 106 or both. Figure 7 , 8 9 show an example of a wireless system 100 including an isolation structure. Figure 7, the system substrate 104 may include a shorting post 724 as part of the isolation structure 500 / 600, and the 3D antenna 106 may include a shorting post 732 as part of the isolation structure 500 / 600. Both the shorting posts 724 and 732 may include a cavity having an opening that interfaces with the gap 148. Each of the cavities of the shorting posts 724 and 732 may have a sidewall and a bottom surface covered by metal. Each of the cavities of the shorting posts 724 and 732 may have a depth (e.g., along the z dimension) equal to an odd multiple of λ / 4, or may otherwise provide a propagation distance of a radio signal between the opening and the reflection position that is equal to an odd multiple of λ / 4. The system substrate 104 may include a shorting post 724 located between adjacent waveguides 134 and 136 for improving isolation between adjacent waveguides. The 3D antenna 106 may also include a shorting post 732 located between adjacent waveguides 154 and 156 for improving isolation between adjacent waveguides. Figure 8 A cross-sectional view of another example of the wireless system 100 is shown in which the system substrate 104 includes the shorting stub 724 and the 3D antenna 106 does not include a shorting stub interfacing the gap 148 . Fig. 9 A cross-sectional view of another example of the wireless system 100 is shown in which the 3D antenna 106 includes a shorting post 732 and the system substrate 104 does not include a shorting post interfacing the gap 148 .

[0044] Fig. 10A and 10B 1 is a schematic diagram showing a first example 1000A and a second example 1000B of the shorting posts 724 and 732 of the wireless system 100. In general, Fig. 10A Cross section as later Figures 11A to 12B As shown in the positioning Fig. 10B Alternative structural options are included in the system substrate 104. Fig. 10A and 10B In both, examples 1000A and 1000B depict cross-sectional views of patches 116 and 118 from perspectives of different respective widths (eg, along the x-dimension) that match the different widths between openings 130 and 132 and between openings 158 and 160 . Fig. 10A Three examples of shorting stubs 724a, 724b, and 724c of the system substrate 104 interfacing with the gap 148 are shown, and Fig. 10B Three examples of shorting stubs 724d, 724e, and 724f of the system substrate 104 are shown interfacing with the gap 148. Each of the shorting stubs 724a, 724b, and 724c or 724d, 724e, and 724f may be integrated into (or part of) the system substrate 104. Fig. 10AEach of the shorting posts 724a, 724b, and 724c may extend through a portion of the thickness of the system substrate 104, and Fig. 10B Each of the shorting posts 724 d , 724 e , and 724 f may extend through the entire thickness of the system substrate 104 . Fig. 10A and 10B The difference between Fig. 10A The system substrate 104 includes a metal layer 1001, and the metal layer 1001 defines a depth D1 of a cavity formed by each of the shorting posts 724a, 724b, and 724c. Fig. 10B This metal layer is not included between its outermost surfaces, so that there is a depth D2 in the cavity formed by each of the shorting posts 724d, 724e, and 724f.

[0045] exist Fig. 10A In FIG. 1 , each of the shorting posts 724a, 724b, and 724c may have a respective cavity 1002, 1004, and 1006 extending between a metal layer 1007 and a metal layer 1001 located on the surface 126 of the system substrate 104 and, therefore, only passing through a partial thickness of the dielectric of the system substrate 104. Fig. 10A In the embodiment, each of the cavities 1002, 1004 and 1006 may correspond to Figure 5B and 6B Cavity 1002 may also include metal sidewalls 1008 and 1010, cavity 1004 may include metal sidewalls 1012 and 1014, and cavity 1006 may include metal sidewall 1016, but in Fig. 10A 1006, cavity 1006 includes region 1020, which is shown as not including metal sidewalls because isolation (e.g., high impedance) can be provided in region 1020 by a dielectric or air extending in the x dimension, or alternatively, metal sidewalls can be included in the region. Metal sidewalls 1008 and 1010 (or 1012 and 1014 or 1016) can extend to and join metal layer 1017 located on surface 124 of system substrate 104. Any metal sidewall can abut the opening of the waveguide and become part of the sidewall of the waveguide. For example, in cavity 1002, metal sidewall 1010 abuts opening 130 and can be Figure 1A 1. Metal layer 1007 also includes an opening 1022 of cavity 1002. Similarly, metal layer 1007 also includes an opening 1024 of cavity 1004 and an opening 1026 of cavity 1006. Each of openings 1022, 1024, and 1026 interfaces with gap 148 and each faces metal layer 1001, such that each opening may correspond to Figure 5B and6B An opening 504 is provided.

[0046] exist Fig. 10B In FIG. 1 , each of shorting stubs 724d, 724e, and 724f may have a respective cavity 1030, 1032, and 1034 extending between metal layer 1007 on surface 126 of system substrate 104 and metal layer 1017 on surface 124, and thus, completely through the thickness of the dielectric of system substrate 104. Fig. 10B In the embodiment, each of the cavities 1030, 1032 and 1034 may correspond to Figure 5B and 6B Cavity 1030 may also include metal sidewalls 1038 and 1040, cavity 1032 may also include metal sidewalls 1042 and 1044, and cavity 1034 may include metal sidewall 1046 and it may include region 1060 without (or with) metal sidewalls. Any metal sidewall may abut the opening of the waveguide and become part of the sidewall of the waveguide. For example, in cavity 1030, metal sidewall 1040 abuts opening 130 and may be Figure 1A 1007. Metal layer 1007 also includes an opening 1048 of cavity 1030. Similarly, metal layer 1007 also includes an opening 1050 of cavity 1032 and an opening 1052 of cavity 1034. Each of openings 1048, 1050, and 1052 interfaces with gap 148 and each faces metal layer 1017, such that each opening may correspond to Figure 5B and 6B An opening 504 is provided.

[0047] In some instances, Fig. 10A and 10B In any one or both of the cavities 1002, 1004, 1006 or each of 1030, 1032, 1034, some or all of them may be filled with an electrically insulating material (such as a dielectric material, a glass fiber material, etc.), and the electrically insulating material may be exposed at the corresponding openings 1022, 1024, 1026 or 1048, 1050, 1052. The radio signal propagating along the gap 148 may enter any of the cavities 1002, 1004 and 1006 or 1030, 1032 and 1034 through its corresponding openings 1022, 1024 and 1026 or 1048, 1050 and 1052. Fig. 10A In this case, the incoming signal can be reflected at metal layer 1001, which can be a short-circuit terminal, and also at Fig. 10BIn the embodiment of the present invention, this incoming signal may be reflected at the metal layer 1017. In order to achieve destructive interference between the incident radio signal and the reflected radio signal, the depth D1 of each of the cavities 1002, 1004, and 1006 or the depth D2 of each of the cavities 1038, 1040, and 1042 may be an odd multiple of λ / 4 of the radio signal. In some examples, if the depth of the thickness of the system substrate 104 does not match (or is close to) an odd multiple of λ / 4 of the radio signal, a thickness of 104 may be provided in the system substrate 104. Fig. 10A The metal layer 1001 is formed to define a depth D1. Therefore, a radio signal propagating along the gap 148 can enter any cavity in the cavity and be blocked by the metal layer (at Fig. 10A In 1001, Fig. 10B In some examples, the radio signal propagating along the gap 148 and entering the cavity through its opening may propagate toward one of the corresponding side walls and be reflected at the side wall as a short-circuit terminal. For example, in Fig. 10A In , this signal can enter the opening 1022 of the cavity 1002 and reflect from the sidewalls 1008 and 1010. As another example, in Fig. 10B In the embodiment of the present invention, this signal can enter the opening 1048 of the cavity 1030 and reflect from the side walls 1038 and 1040. In order to achieve destructive interference between the incident radio signal and the reflected radio signal, Fig. 10A The portion marked as W2 in FIG. 1 is between the side wall (eg, side wall 1012) for providing the short-circuit terminal and the opening 1024 (or Fig. 10B The distance between the sidewall 1042 and the opening 1050 can be an odd multiple of λ / 4 of the radio signal. In some examples, the combination of D1 and W2 or D2 and W2 can also be an odd multiple of λ / 4 of the radio signal to account for the additional distance traversed by the radio signal before reflection.

[0048] In addition, the 3D antenna 106 may include a cavity 1070 that interfaces with the gap 148 to provide the shorting post 732. Each cavity 1070 may have an inner surface (eg, sidewalls and bottom surface) covered by a metal layer, and a depth H of the cavity of C It may be an odd multiple of λ / 4 of the radio signal propagating through the gap 148 .

[0049] Figures 11A to 11D Various views of a PCB substrate 1102 are shown, which, as an example, includes certain aspects described above. The PCB substrate 1102 may be Figures 1A to 10BAn example of a system substrate 104 of a wireless system 100. Specifically, Fig.11A A plan view of a surface 1114 of the PCB substrate 1102 (eg, the surface 124 of the system substrate 104) that interfaces with the packaged semiconductor device 102 is provided, and Fig. 11B A perspective view of PCB substrate 1102 including surface 1114 is provided. In addition, Fig. 11C A plan view of a surface 1116 of the PCB substrate 1102 (eg, the surface 126 of the system substrate 104) that interfaces with the 3D antenna is provided, and Fig.11D A perspective view of PCB substrate 1102 including surface 1116 is provided. PCB substrate 1102 includes openings 1124, 1126, 1128, and 1130. Each of openings 1124, 1126, 1128, and 1130 may correspond to / represent one of the openings of the system substrate described above (e.g., openings 134, 136, 154, 156, 202, 510, and 602).

[0050] In the example shown, each of the openings 1124, 1126, 1128, and 1130 has a pair of ridges that provide each of the openings with an approximate figure-8 shape. Further, in the example shown, each of the openings 1124, 1126, 1128, and 1130 is oriented such that its major axis (the longest symmetry-positioned axis) is orthogonal to the major axis of its nearest (or nearest) other opening. This orthogonal orientation provides cross-polarization between waves traveling through one waveguide relative to waves or corresponding waves in an adjacent waveguide, because signal isolation between these waveguides can be improved.

[0051] refer to Fig. 11B, the PCB substrate 1102 includes a dielectric layer 1132. A metallization layer 1134 provides a surface 1114, and the thickness of the metallization layer 1134 can be in the range of 15 μm to 35 μm or more. In one example, openings 1124, 1126, 1128, and 1130 are first formed through the entire thickness (in the z dimension) of the dielectric layer 1132, and then the upper surface 1114 is metallized, thereby producing the metallization layer 1134. Metallization can also be formed on the sidewalls 1154, 1156, 1158, and 1160 of the corresponding openings 1124, 1126, 1128, and 1130 (in parallel or in a separate step and / or process). In some examples, an intermediate metal layer 1152 is also formed in the x / y plane (thus in an orientation parallel to the surface 1114) but at a certain depth (e.g., in the z dimension) and within the dielectric layer 1132 or to separate the dielectric layer into a separate layer. Further, the PCB substrate 1102 can include solder balls (or solder pillars) 1162 located on the surface 1114. The solder balls 1162 can provide electrical connections between traces / vias in the PCB substrate 1102. The solder balls 1162 can be insulated from the metallization layer 1134 by an insulating layer (e.g., a solder film) not shown in the drawings.

[0052] Fig. 11C A plan view of the surface 1116 of the PCB substrate 1102 is provided, and Fig.11D A perspective view of PCB substrate 1102 including surface 1116 is provided. Fig. 11C and 11D PCB substrate 1102 includes an isolation structure 1170 located on surface 1116. Isolation structure 1170 may include a set of cavities / grooves abutting sidewalls 1154, 1156, 1158, and 1160 of the opening, and may include shorting posts, such as Fig. 10AThe shorting pile 724 of the isolation structure. The cavity / groove of the group can be filled with the same dielectric material as the dielectric material of the dielectric layer 1132. The surface 1116 can include metal layers 1172, 1174, 1176, 1178 and 1180, and the opposing edges of the metal layers can define the opening of the cavity / groove of the isolation structure 1170. In addition, the metal layer 1172 can surround the opening 1130, the metal layer 1174 can surround the opening 1126, the metal layer 1176 can surround the opening 1128, and the metal layer 1178 can surround the opening 1130. In some examples, some of the metal layers can include beveled edges for creating a cavity opening with a restricted portion (e.g., an opening with an hourglass shape) to increase the bandwidth of the waveguide. For example, metal layer 1172 may include beveled edge 1182 , metal layer 1174 may include beveled edge 1184 , metal layer 1176 may include beveled edge 1186 , and metal layer 1178 may include beveled edge 1188 .

[0053] Fig. 12A and 12B Shows that it can be installed in Figures 11A to 11D Various views of an example 3D antenna 1202 or a portion thereof on the surface 1116 of the PCB substrate 1102. Specifically, Fig. 12A A plan view of a surface 1204 of a 3D antenna 1202 interfacing with a PCB substrate 1102 is provided, and Fig. 12B A perspective view of a 3D antenna 1202 including a surface 1204 is provided. The 3D antenna 1202 includes openings 1212, 1214, 1216, and 1218. Each of the openings 1212, 1214, 1216, and 1218 may correspond to / represent one of the openings of the 3D antenna described above (e.g., openings 150, 152, 202, 510, and 602). The 3D antenna 1202 includes waveguides 1222, 1224, 1226, and 1228, which include corresponding openings 1212, 1214, 1216, and 1218. The 3D antenna 1202 may include a metal structure, or may have a surface coated or plated with a metal layer.

[0054] like Fig. 12A and 12B As shown, the 3D antenna 1202 includes an isolation structure 1230 connected to the surface 1204. The isolation structure 1230 may include a set of cavities / grooves that abut the waveguides 1222, 1224, 1226, and 1228, and may include shorting posts, such as Fig. 10A and 10B The short-circuit pile 734.

[0055] Fig.131 is a perspective view of an example of a PCB substrate 1300 and a 3D antenna 1302, which may be part of a wireless system such as the wireless system 100. Fig.13 In the embodiment, the PCB substrate 1300 includes openings 1306, 1308, 1310 and 1312, each of which has a pair of ridge structures, and the pair of ridge structures provide an approximate figure 8 shape for each of the openings. Each of the openings 1306, 1308, 1310 and 1312 is oriented in a co-polarization arrangement with its main axis parallel to the main axis of the other openings closest to it (or the plurality of closest). As described above, due to the ridge structure, the occupied space of each opening (and waveguide) can be reduced to increase the separation distance between the openings. This allows the openings to be oriented in a co-polarization arrangement to reduce the occupied space of the wireless system while reducing the degradation of the cross-coupling between the waveguides. In addition, the 3D antenna 1302 includes openings 1314, 1316, 1318 and 1320, which are oriented in a co-polarization arrangement and matched with the corresponding openings 1306, 1308, 1310 and 1312. The 3D antenna 1302 also includes an isolation structure 1330 that includes a set of cavities / grooves configured as shorting posts abutting a waveguide having openings 1306 , 1308 , 1310 , and 1312 .

[0056] In this specification, the term "coupled" may encompass a connection, transmission, or signal path that achieves a functional relationship consistent with this specification. For example, if device A provides a signal for controlling device B to perform an action, then: (a) in a first instance, device A is directly coupled to device B; or (b) in a second instance, device A is indirectly coupled to device B through an intervening component C, where the intervening component C does not substantially change the functional relationship between device A and device B, so that device B is controlled by device A through the control signal provided by device A.

[0057] A device "configured to" perform a task or function may be configured (e.g., programmed and / or hardwired) by the manufacturer at the time of manufacture to perform the function and / or may be configurable (or reconfigurable) by the user after manufacture to perform the function and / or other additional or alternative functions. Configuration may be performed through firmware and / or software programming of the device, through the construction and / or layout of hardware components and interconnection of the device, or a combination thereof.

[0058] Circuits or devices described herein as including certain components may be adapted to be coupled with components used to form the described circuit systems or devices. For example, structures described herein as including one or more semiconductor elements (e.g., transistors), one or more passive elements (e.g., resistors, capacitors, and / or inductors), and / or one or more sources (e.g., voltage and / or current sources) may be adapted to be coupled with at least some of the passive elements and / or sources to form the described structures as they are manufactured or after they are manufactured by an end user and / or a third party.

[0059] Certain components may be described herein as belonging to a specific process technology, but these components may be exchanged for components of other process technologies. The circuits described herein are reconfigurable to include replaced components to provide functionality at least partially similar to the functionality available before component replacement. Unless otherwise specified, components shown as resistors generally represent any one or more elements coupled in series and / or in parallel to provide a certain amount of impedance represented by the resistor shown. For example, a resistor or capacitor shown herein and described as a single component may instead be a plurality of resistors or capacitors coupled in series or in parallel between two nodes that are the same as the nodes of a single resistor or capacitor.

[0060] In this specification, the use of the phrase "ground voltage potential" includes chassis ground, earth ground, floating ground, virtual ground, digital ground, common ground and / or any other form of ground connection that is suitable or appropriate for the teachings of this specification. In this specification, unless otherwise specified, "about", "approximately" or "substantially" preceding a parameter means within + / -10% of the parameter.

[0061] Modifications may be made to the described examples, and other examples are possible, within the scope of the claims.

Claims

1. A device comprising: A substrate, the substrate comprising: and an opposing first surface and a second surface, the first surface comprising a metal pad; a dielectric layer, the dielectric layer being located between the first surface and the second surface; An opening extends through the dielectric layer and connects between the first surface and the second surface, the opening comprising a first ridge structure and a second ridge structure, each of the first ridge structure and the second ridge structure extending along the opening with a uniform cross-section. 2 . The device according to claim 1 , wherein each of the first ridge structure and the second ridge structure extends symmetrically relative to each other along the opening and reaches the first surface and the second surface.

3. The device according to claim 1, wherein: the first ridge structure being located on a first side of the opening; The second ridge structure is located on a second side of the opening; and The first side and the second side are opposite to each other.

4. The device of claim 3, wherein the first ridge structure extends along a midline of the first side, and the second ridge structure extends along a midline of the second side.

5. The apparatus of claim 1, wherein the opening is configured as a waveguide, and a size of a footprint of the opening is based on a cutoff frequency of the waveguide. The device of claim 1 , further comprising an isolation structure adjacent to the opening. The device of claim 6 , wherein the isolation structure comprises a cavity, the cavity being open toward the second surface.

8. The device of claim 7, further comprising a metal member located between the opening and the cavity.

9. The device of claim 7, further comprising a dielectric material located in the cavity. 10 . The device of claim 9 , further comprising a metal layer covering the sidewalls and the bottom of the cavity. The device of claim 9 , further comprising a metal layer opposite the cavity opening.

12. The device of claim 11, wherein the dielectric material is a first dielectric material, and the device further comprises a second dielectric material, the second dielectric material being located between the metal layer and the first surface.

13. The device of claim 7, wherein the opening is a first opening, and the substrate comprises a second opening passing through the dielectric layer, and the second opening is connected between the first surface and the second surface; and Wherein the device further comprises: a first metal layer, the first metal layer covering a first sidewall of the first opening, the first metal layer extending along the first opening and reaching the first surface and the second surface; as well as a second metal layer, the second metal layer covering a second side wall of the second opening, the second metal layer extending along the second opening and reaching the first surface and the second surface; and The first metal layer and the second metal layer provide side walls of the cavity.

14. The device of claim 13, further comprising a third metal layer and a fourth metal layer on the second surface, the third metal layer bonding to the first metal layer, and the fourth metal layer bonding to the second metal layer; The third metal layer is spaced apart from the fourth layer and defines a third opening connected to the cavity. 15 . The device of claim 14 , wherein the third metal layer has a beveled edge, the fourth metal layer has a straight edge, and the beveled edge and the straight edge are located on opposite sides of the opening.

16. The device of claim 7, wherein the isolation structure comprises a trench structure surrounding the opening, the trench structure being open toward the second surface, and the device further comprises a metal layer covering a sidewall and a bottom of the trench structure, and the cavity is a part of the trench structure.

17. The apparatus according to claim 1, and further comprising: a packaged semiconductor device coupled to the metal pad via an interconnect, the packaged semiconductor device including a signal patch facing the opening, and the interconnect surrounding the opening; and An antenna is mounted on the second surface.

18. The device according to claim 17, wherein: The opening is a first opening; The antenna has an antenna surface facing the second surface; and The antenna comprises: A second opening extending from the antenna surface in alignment with the first opening, and a groove structure opening toward the antenna surface and surrounding the second opening.

19. The device according to claim 18, wherein the trench structure is a first trench structure; wherein the substrate comprises a second trench structure, the second trench structure extending toward the second surface and surrounding the first opening; and The first trench structure is aligned with the second trench structure.

20. The device of claim 18, further comprising a dielectric material located in the second trench.

21. The apparatus of claim 1, wherein the substrate comprises a printed circuit board (PCB).

22. An apparatus comprising: A substrate, comprising: and an opposing first surface and a second surface, the first surface comprising a metal pad; a first metal layer, the first metal layer being located on the second surface, the first metal layer comprising an opening; an interconnect network located between the first surface and the second surface and coupled to the metal pad; a dielectric layer located between the first surface and the second surface and surrounding the network of interconnects, the dielectric layer comprising a first dielectric material; a cavity, the cavity being located in the dielectric layer, the cavity extending from the opening, the cavity comprising a second dielectric material; as well as A second metal layer covers the side surface and the bottom surface of the cavity, and the second metal layer is bonded to the first metal layer.

23. The device of claim 22, further comprising a third dielectric material located between the bottom surface of the cavity and the first surface.

24. The device of claim 22, wherein the first dielectric material and the second dielectric material are of the same dielectric material.

25. The device of claim 22, wherein the opening is a first opening; and The device further comprises a second opening extending through the dielectric layer and connected between the first surface and the second surface, the second opening abutting the cavity. 26 . The device of claim 25 , wherein the second metal layer forms the side surface and abuts the second opening.

27. The device of claim 26, further comprising a trench structure surrounding the second opening, the trench structure opening toward the second surface, and the cavity being a part of the trench structure.

28. The apparatus of claim 26, and further comprising: a packaged semiconductor device coupled to the metal pad via an interconnect, the packaged semiconductor device including a signal loading facing the second opening, and the interconnect surrounding the second opening; and An antenna is mounted on the second surface.

29. The apparatus of claim 28, wherein: The antenna has an antenna surface facing the second surface; and The antenna comprises: A third opening extending from the antenna surface in alignment with the second opening, and a groove structure opening toward the antenna surface and surrounding the third opening.

30. The device according to claim 29, wherein the trench structure is a first trench structure; wherein the substrate comprises a second trench structure, the second trench structure extends toward the second surface and surrounds the second opening, the second trench structure comprises the cavity; and The first trench structure is aligned with the second trench structure.

31. The apparatus of claim 22, wherein the substrate comprises a printed circuit board (PCB).

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