Power conversion device and rotating electric machine unit

Abstract

The inverter device has an inverter housing (90). The inverter case (90) has an inverter outer peripheral wall (91) and a plurality of beam sections (501). The inverter outer peripheral wall (91) has an inner peripheral surface (90b) and extends in a ring shape about an inverter axis (Ci). The beam section (501) extends radially inward from the inverter outer peripheral wall (91). The plurality of beam sections (501) are arranged in the circumferential direction (CD) along the inner circumferential surface (90b). The inverter device has a high-voltage substrate and a drive substrate. The high-voltage substrate and the drive substrate extend in a plate shape in a direction orthogonal to the axial direction (AD). The high-voltage substrate and the driving substrate are fixed to the plurality of beam parts (501) in a state of being erected on the plurality of beam parts (501). The high-voltage substrate and the drive substrate are provided with mounting components such as a smoothing capacitor part.

Description

Citation of related applications

[0001] This application is based on patent application No. 2022-075547 filed in Japan on April 29, 2022, and the contents of the basic application are cited as a whole by reference. Technical Field

[0002] The disclosure in this specification relates to a power conversion device and a rotating electric machine unit. Background Art

[0003] Patent document 1 describes a mechatronic motor having a motor and a power conversion control device. The motor has a cylindrical housing and a plate-shaped opening cover (Japanese: エンブラ) covering the opening of the housing. A bearing for supporting the shaft of the motor is provided on the opening cover. The opening cover is sometimes referred to as an end plate. The power conversion control device is mounted on a substrate, and the substrate is fixed to the flat plate portion of the opening cover via a fixing member. Prior art literature Patent Literature

[0004] Patent Document 1: Japanese Patent No. 6637518 Summary of the invention

[0005] However, in the above-mentioned Patent Document 1, the vibration generated by the motor is easily transmitted to the opening cover via the shaft and the bearing. Moreover, the vibration is easy to resonate in the flat plate portion of the opening cover, and when the power conversion control device is installed on the flat plate portion, it is easy to directly affect the vibration of the flat plate. As a result, the reliability of the power conversion control device may be reduced and the weight may be increased to ensure vibration resistance.

[0006] A main object of the present disclosure is to provide a power conversion device and a rotating electric machine unit that are lightweight and highly resistant to vibration.

[0007] The various modes disclosed in this specification use various technical means to achieve various purposes. In addition, the claims and the symbols in parentheses described therein are examples of the correspondence relationship with the specific elements described in the embodiment described later as one mode, and do not limit the technical scope.

[0008] In order to achieve the above object, the disclosed method is a driving device, The power conversion device converts electric power, wherein the power conversion device comprises: A housing having an outer peripheral wall extending in an annular shape; A plurality of beam portions, the plurality of beam portions extending from the outer peripheral wall toward the inner side in the radial direction of the outer peripheral wall, and a plurality of beam portions arranged in the circumferential direction of the outer peripheral wall; a plate member extending in a plate shape in a direction perpendicular to the axial direction of the outer peripheral wall and fixed to the plurality of beam portions in a state of being bridged over the plurality of beam portions; and The mounting component is energizable and mounted on the plate member.

[0009] According to the above-mentioned power conversion device, the installation component of the power conversion device is fixed to the beam portion extending inward from the outer peripheral wall of the power conversion device via the plate member. In this structure, a plurality of beam portions and the plate member act on each other, and can limit the vibration of each individual beam portion. That is, the structure in which the plate member for installing the installation component is fixed to a plurality of lightweight beam portions is a light and vibration-resistant high-strength shape. In this way, the transmission of vibration from the outer peripheral wall to the installation component can be suppressed, and the vibration resistance of the power conversion device can be improved.

[0010] The disclosed method is a rotating electric machine unit, The rotating motor unit is driven by the supply of electric power, wherein the rotating motor unit comprises: a rotating electric machine having a rotor and a stator; and A power conversion device converts the power supplied to the rotating electric machine. The power conversion device has: a housing having an outer peripheral wall extending in an annular shape and fixed to the rotating electrical machine; A plurality of beam portions, the plurality of beam portions extending from the outer peripheral wall toward the inner side in the radial direction of the outer peripheral wall, and a plurality of beam portions arranged in the circumferential direction of the outer peripheral wall; a plate member extending in a plate shape in a direction perpendicular to the axial direction of the outer peripheral wall and fixed to the plurality of beam portions in a state of being bridged over the plurality of beam portions; and The mounting component is energizable and mounted on the plate member.

[0011] According to the above-mentioned rotating electrical machine unit, the outer peripheral wall of the power conversion device contacts the outer peripheral wall of the rotating electrical machine with relatively less vibration. In addition, the mounting component of the power conversion device is fixed to the lightweight beam portion extending inward from the outer peripheral wall of the power conversion device via the plate member. Therefore, it is possible to suppress the transmission of vibration from the outer peripheral wall to the mounting component. Therefore, it is possible to achieve both vibration resistance and lightness of the rotating electrical machine unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram showing the electrical configuration of the drive system in the first embodiment. Figure 2 This is a three-dimensional diagram of the EPU. Figure 3 It is a perspective view of a motor device and an inverter device. Figure 4 It is a schematic front view of the motor device and the inverter device. Figure 5 This is a plan view of the interior of the inverter device in the structure group A as viewed from the high voltage side. Figure 6 This is a plan view of the interior of the inverter device as viewed from the low-voltage side. Figure 7 yes Figure 6 Cross-sectional view along line VI I-VI I. Figure 8 This is a top view of the inverter housing and arm switch unit as seen from the high voltage side. Fig. 9 This is a top view of the inverter housing and arm switch unit as seen from the low-voltage side. Fig.10 It is a schematic longitudinal sectional view of the periphery of an arm switch unit in the inverter device. Fig.11 This is a perspective view showing the internal structure of the high-voltage substrate in structure group B as viewed from the low-voltage side. Fig.12 A top view showing the structure of the P bus and N bus in the inverter device. Fig.13 A top view showing the structure of an output bus in an inverter device. Fig.14 A top view showing the structure of a ground busbar in an inverter device. Fig.15 This is a circuit diagram for explaining the parasitic inductance on the bus bar. Fig.16 This is a schematic perspective view of the periphery of the arm switch section in the high voltage substrate. Fig.17 This is an exploded top view of the high voltage substrate. Fig.18 This is a circuit diagram for explaining output current, P current, and N current. Fig.19 This is an exploded top view of a high voltage substrate for explaining output current, P current, and N current. Fig. 20 It is a circuit diagram used to illustrate current imbalance. Fig.21 This is a diagram showing switching current for explaining current imbalance. Fig. 22 This is a circuit diagram for explaining Comparative Example 2. Fig.23 This is a plan view of the interior of the inverter device in the structure group C as viewed from the high voltage side. Fig.24 It is a schematic longitudinal sectional view of the arm switch portion and its surroundings. Fig.25 This is a diagram showing the periphery of the arm switch portion as viewed from the circumferential outside. Fig.26 This is a plan view of the interior of the inverter device in the structure group D as viewed from the high voltage side. Fig. 27 It is a schematic longitudinal sectional view for explaining the heat dissipation path of the arm switch part. Fig.28 It is a schematic plan view for explaining a heat dissipation path of an arm switch unit. Fig.29 This is a schematic perspective view of the second embodiment and the surrounding area of ​​the arm switch portion of the high voltage substrate in the structure group B. Fig.30 This is an exploded top view of the high voltage substrate. Fig.31 This is a circuit diagram showing the output current, P current, and N current. Fig.32 This is an exploded top view of a high voltage substrate for explaining output current, P current, and N current. Fig.33 It is an exploded top view of the high voltage substrate in the third embodiment. Fig.34 This is an exploded top view of a high voltage substrate for explaining output current, P current, and N current. Fig.35 It is a perspective view showing the internal structure of the high-voltage substrate according to the fourth embodiment, as viewed from the low-voltage side. Fig.36 It is a schematic longitudinal sectional view of the vicinity of the arm switch portion in the fifth embodiment and the configuration group C. Fig.37 This is a diagram showing the periphery of an arm switch portion in the sixth embodiment as viewed from the circumferential outside. Fig.38 This is a diagram showing the periphery of the arm switch portion in the seventh embodiment as viewed from the circumferential outside. Fig.39 This is a diagram showing the periphery of an arm switch portion in the eighth embodiment as viewed from the circumferential outside. Fig.40 It is a perspective view showing a modified example of the EPU. Fig.41 It is a perspective view showing a modified example of the EPU. DETAILED DESCRIPTION

[0013] Hereinafter, with reference to the accompanying drawings, a plurality of methods for implementing the present disclosure will be described. In each method, sometimes the same reference numerals are marked on the parts corresponding to the matters described in the previous method, and repeated descriptions are omitted. In the case where only a part of the structure is described in each method, other methods previously described can be applied to the other parts of the structure. Not only are the combinations of the parts that can be combined specifically and clearly recorded in each embodiment, but as long as there is no obstacle to the combination, the embodiments can also be partially combined even if not clearly recorded.

[0014] <First embodiment> Figure 1 The drive system 30 shown is installed in a mobile body such as a vehicle or an aircraft. As a vehicle equipped with the drive system 30, there are electric vehicles (EV), hybrid vehicles (HV), and fuel cell vehicles, etc. As an aircraft, there are aircraft such as vertical take-off and landing aircraft, rotary wing aircraft, and fixed wing aircraft. Such aircraft are sometimes referred to as electric aircraft. As a vertical take-off and landing aircraft, there is eVTOL. eVTOL is an electric vertical take-off and landing aircraft, and is the abbreviation of electric Vertical Take-Off and Landing aircraft.

[0015] The drive system 30 is a system for driving the moving object to move. If the moving object is a vehicle, the drive system 30 drives the vehicle to travel, and if the moving object is a flying object, the drive system 30 drives the flying object to fly.

[0016] The drive system 30 has a battery 31 and an EPU 50. The battery 31 is electrically connected to the EPU 50. The battery 31 is a power supply unit that supplies power to the EPU 50, and is equivalent to a power supply unit. The battery 31 is a DC voltage source that applies a DC voltage to the EPU 50. The battery 31 has a secondary battery that can be charged and discharged. As the secondary battery, there are lithium-ion batteries, nickel-hydrogen batteries, etc. In addition, as a power supply unit, in addition to or instead of the battery 31, a fuel cell or a generator, etc. can also be used.

[0017] The EPU 50 is a device that drives the mobile body to move, and is a rotary motor unit composed of a motor electromagnetic circuit 61 and an inverter device 80. The EPU 50 installed in a vehicle drives the wheels to rotate, for example. The EPU 50 installed in an aircraft drives the rotor to rotate, for example. The EPU 50 is sometimes referred to as an electric drive device of an electric type, a propulsion device for propelling an aircraft, and the like.

[0018] The EPU 50 has a motor device 60 (see Figure 2) and an inverter device 80. For example, the EPU 50 has a motor device 60 and an inverter device 80. The motor device 60 has a motor electromagnetic circuit 61. The inverter device 80 has an inverter main circuit 81 composed of a plurality of switching elements. The motor device 60 is equivalent to a rotating electrical machine, and the inverter device 80 is equivalent to a power conversion device. The battery 31 is electrically connected to the motor electromagnetic circuit 61 via the inverter main circuit 81. Electric power is supplied to the motor electromagnetic circuit 61 according to the voltage and current supplied from the battery 31 and from the inverter main circuit 81.

[0019] The motor electromagnetic circuit 61 is a multi-phase AC motor. The motor electromagnetic circuit 61 is, for example, a three-phase AC motor, and uses a brushless motor having a U phase, a V phase, and a W phase. The motor electromagnetic circuit 61 functions as a generator during regeneration. The coil of the motor electromagnetic circuit 61 is usually a three-phase U phase, a V phase, and a W phase, but the number of phases and the wiring method are not limited.

[0020] The inverter main circuit 81 converts the power supplied to the motor electromagnetic circuit 61 from direct current to alternating current by high-speed switching. The inverter main circuit 81 is a power conversion unit that converts power. The inverter main circuit 81 performs power conversion for each of a plurality of phases.

[0021] The inverter device 80 has a P line 141 and an N line 142. The P line 141 and the N line 142 electrically connect the battery 31 and the inverter main circuit 81. The P line 141 is electrically connected to the positive electrode of the battery 31. The N line 142 is electrically connected to the negative electrode of the battery 31. The battery 31 has a function of supplying or charging electric power.

[0022] The inverter device 80 includes a smoothing capacitor 145 and an EMI filter 150 in addition to the inverter main circuit 81. The smoothing capacitor 145 is formed by connecting a plurality of capacitors in parallel, and is connected to the P line 141 and the N line 142. The smoothing capacitor 145 smoothes the current pulsation flowing through the intermittent operation of the inverter main circuit 81, and stabilizes the current supplied from the battery 31.

[0023] The EMI filter 150 is a filter circuit that reduces electromagnetic noise generated by the EPU 50 between the battery 31 and the inverter main circuit 81. The EMI filter 150 is connected to the P line 141, the N line 142, and the ground of the EPU. In an EPU system in which the housing and wiring are sufficiently shielded, the EMI filter 150 may be omitted.

[0024] The EMI filter 150 has components such as a common mode coil 151, a normal mode coil 152, a Y capacitor 153, an X capacitor 154, and a varistor 155. In the EMI filter 150, the number of stages, circuit structures, and circuit component constants of the common mode coil 151, the normal mode coil 152, the Y capacitor 153, and the X capacitor 154 are designed for the required EMI standard. The varistor 155 absorbs surges from the outside such as lightning surges, and protects electronic components and electrical equipment located in the EPU 50 from the influence of surges.

[0025] If a set of the upper arm 84 and the lower arm 85 is called a bridge branch of one phase, the inverter main circuit 81 forms a circuit corresponding to the number of phases of the motor such as U phase, V phase, and W phase by connecting a plurality of bridge branches in parallel. The high potential side of the upper arm 84 is connected to the P line 141, and the low potential side of the lower arm 85 is connected to the N line 142. In addition, the low potential side of the upper arm 84 and the high potential side of the lower arm 85 of each bridge branch are connected and connected to the output line 143.

[0026] The upper arm 84 and the lower arm 85 have an arm switch 86 and a diode 87. The arm switch 86 has a function of selecting a conductive state or a non-conductive state and performing switch control, and the diode 87 has a function of allowing current to flow from the low potential side to the high potential side even in the non-conductive state. The arm switch 86 is, for example, a transistor such as a MOSFET or an RC-IGBT. The arm switch 86 is composed of a single component having both the arm switch 86 and the diode 87. The arm switch 86 is sometimes referred to as a transistor switch.

[0027] The upper arm 84 and the lower arm 85 are respectively composed of at least one arm switch 86 and a diode 87. In the upper arm 84 and the lower arm 85, a plurality of elements may be connected in parallel. Figure 1 and Fig.11 In the example, three parallel connections are used for illustration. Figure 5 In

[0014] , six parallel connections are taken as an example.

[0028] The inverter device 80 includes a drive circuit 160 and a control circuit 161. Figure 1 In the figure, the driving circuit 160 is illustrated as DD, and the control circuit 161 is illustrated as CD.

[0029] The control circuit 161 is a control device such as an ECU, and controls the switching elements of the inverter main circuit 81. ECU is an abbreviation for an electronic control unit. The control circuit 161 is mainly composed of a microcomputer circuit including a processor, a memory, an I / O, a power supply circuit, and wiring connecting them.

[0030] The control circuit 161 determines the conduction state of the arm switch 86 of the inverter main circuit 81 by executing the control program stored in the memory. The control circuit 161 is also electrically connected to external devices and various sensors. The external device is, for example, a host ECU such as an integrated ECU installed on a mobile body. The external device has the function of indicating the driving torque and speed of the EPU 50 and monitoring the state of the EPU 50. Various sensors are signal sources required by the control program such as temperature, current, voltage, angle, speed, etc. of each part.

[0031] The drive circuit 160 is electrically connected to each of the plurality of arm switches 86 provided in the inverter main circuit 81. The drive circuit 160 drives the gate of the arm switch 86 to a conducting state and a non-conducting state by insulating, level converting, and amplifying the command signal from the control circuit 161. The drive circuit 160 is sometimes referred to as a driver. The conducting state is sometimes referred to as an on state, and the non-conducting state is sometimes referred to as an off state.

[0032] Examples of various sensors built into the inverter device 80 include a motor current sensor 146 and a battery current sensor 147. The motor current sensor 146 is electrically connected to the control circuit 161, and is provided for, for example, the U phase, the V phase, and the W phase, respectively, and detects the current flowing through the output line 143. The battery current sensor 147 is provided, for example, on the P line 141, and is electrically connected to the control circuit 161, and detects the current flowing through the battery 31.

[0033] like Figure 2 , Figure 3 , Figure 4 As shown, in the EPU 50, the inverter device 80 is arranged along the motor axis Cm of the motor device 60 and overlapped in the axial direction AD, and is fixed to each other by a fixing member such as a bolt. The motor device 60 and the inverter device 80 are each formed in a cylindrical shape as a whole. Hereinafter, the direction of the cylindrical shape is explained by the axial direction AD, the radial direction RD, and the circumferential direction CD which are orthogonal to each other.

[0034] The motor device 60 has at least one stator 200 constituting a motor electromagnetic circuit 61 and at least one rotor 300 rotating about the motor axis Cm. The motor device 60 is, for example, an axial gap motor and is arranged in the axial direction AD. For example, the stator 200 is provided between two rotors 300.

[0035] exist Figure 3 In the embodiment, the motor housing 70 is, for example, in a cylindrical shape and accommodates the motor device 60. The motor housing 70 is formed of a metal material or the like and has thermal conductivity.

[0036] The motor housing 70 includes a motor outer peripheral wall 71 and motor fins 72. The motor outer peripheral wall 71 is annular in the circumferential direction CD and has an outer peripheral surface 70a for cooling the motor device 60. The motor fins 72 are cooling fins provided on the outer peripheral surface 70a to improve the heat dissipation effect, protrude radially outward to increase the surface area, and extend in the axial direction AD. A plurality of motor fins 72 are arranged in the circumferential direction CD.

[0037] The inverter housing 90 is, for example, cylindrical and accommodates the inverter device 80 including the inverter main circuit 81. The inverter axis Ci is the center line of the inverter housing 90 and coincides with the motor axis Cm. The inverter housing 90 is formed of a metal material or the like and has thermal conductivity. The inverter housing 90 has an inverter peripheral wall 91 and inverter fins 92.

[0038] The inverter outer peripheral wall 91 is annular in the circumferential direction CD and mainly includes an outer peripheral surface 90a and an inner peripheral surface 90b (see Figure 5 The inverter fins 92 are heat dissipation fins provided on the outer peripheral surface 90a to improve the heat dissipation effect, protrude radially outward to increase the surface area, and extend in the axial direction AD. A plurality of inverter fins 92 are arranged in the circumferential direction CD.

[0039] When the motor peripheral wall 71 and the inverter peripheral wall 91 have the same shape and size when viewed from the axial direction AD, the cooling air can be easily and efficiently flow in the axial direction AD by fixing the motor device 60 and the inverter device 80 in the axial direction AD. However, as long as the motor device 60 and the inverter device 80 can be fixed in the axial direction AD, the motor peripheral wall 71 and the inverter peripheral wall 91 may have different shapes and sizes when viewed from the axial direction AD.

[0040] As described above, in the case of air cooling, EPU 50 can cool motor device 60 and inverter device 80 by allowing wind from the air supply fan to flow in axial direction AD along the plate surfaces of motor fin 72 and inverter fin 92 .

[0041] like Figure 2 As shown, the EPU 50 has a unit duct 100 formed in a cylindrical shape as a whole, and the unit duct 100 allows the cooling air in the axial direction AD from the air supply fan to flow without waste along the plate surfaces of the motor fins 72 and the inverter fins 92. The unit duct 100 is in a state of covering the motor housing 70 and the inverter housing 90 from the outer peripheral side, and has openings formed at both ends of the axial direction AD.

[0042] As a more favorable shape, there is a structure in which the inner peripheral surface of the unit duct 100 is close to or in contact with the front end surfaces of the motor fin 72 and the inverter fin 92. In this structure, most of the cooling air passing in the axial direction AD passes between the motor fin 72 and the inverter fin 92, which can improve the heat dissipation effect.

[0043] like Figure 4 As shown, the motor device 60 includes a shaft 340, a first bearing 360, a second bearing 361, and a rotation angle resolver 421. The shaft 340 is a rotating shaft that rotates together with the rotor 300.

[0044] The first bearing 360 and the second bearing 361 are arranged in the axial direction AD, and support the rotor 300 and the shaft 340 so that they can rotate. The first bearing 360 is provided at a position closer to the inverter device 80 than the second bearing 361 in the axial direction AD. The first bearing 360 is provided at a position that enters the interior of the inverter device 80, for example. At least a portion of the first bearing 360 is accommodated in the inverter housing 90. The first bearing 360 is fixed to an end plate fixed to the motor housing 70 or an end plate sandwiched between the inverter housing 90 and the motor housing 70.

[0045] The rotation angle resolver 421 is a sensor for detecting the rotation angle of the motor electromagnetic circuit 61. The rotation angle resolver 421 is electrically connected to the control circuit 161, and outputs a detection signal of SIN / COS for the excitation signal from the control circuit 161. The control circuit 161 measures the rotation angle and the rotation speed based on the detection signal of SIN / COS. The control circuit 161 may also detect the rotation using other sensors. The control circuit 161 may also estimate the rotation angle using a method that does not use a rotation angle sensor, such as a motor current.

[0046] The rotation angle resolver 421 is provided, for example, at a position entering into the inverter device 80. The rotation angle resolver 421 is provided, for example, at a position closer to the inverter device 80 than the first bearing 360 in the axial direction AD.

[0047] In the motor housing 70, the stator 200 and the rotor 300 are accommodated in the inner space of the motor peripheral wall 71. The motor peripheral wall 71 is aligned with the inverter peripheral wall 91 in the axial direction AD. The inverter peripheral wall 91 is equivalent to the device peripheral wall, and the motor peripheral wall 71 is equivalent to the motor peripheral wall.

[0048] The motor device 60 includes a rear end plate 62 and a front end plate 63 in addition to the motor housing 70. The end plates 62 and 63 are formed of a metal material or the like and have thermal conductivity. The end plates 62 and 63 extend in a plate shape in a direction perpendicular to the axial direction AD. The end plates 62 and 63 are arranged in the axial direction AD with the motor housing 70 interposed therebetween. The end plates 62 and 63 are fixed to the motor outer peripheral wall 71 in a state of covering the internal space of the motor outer peripheral wall 71.

[0049] The rear end plate 62 is provided between the motor housing 70 and the inverter housing 90. The rear end plate 62 is, for example, sandwiched between the motor outer peripheral wall 71 and the inverter outer peripheral wall 91. The rear end plate 62 covers the stator 200 and the rotor 300 from the inverter device 80 side. The rear end plate 62 is formed in an annular shape and is provided radially outside the first bearing 360. The rear end plate 62 is equivalent to a cover.

[0050] The inverter device 80 has a heat insulating portion 545. The heat insulating portion 545 has heat insulating properties and is a heat insulating layer and an air layer. The heat insulating layer is formed of a material having heat insulating properties. The heat insulating portion 545 extends in a plate shape in a direction orthogonal to the axial direction AD. The heat insulating portion 545 is provided between the rear end plate 62 and the high voltage substrate 510 in the axial direction AD. The heat insulating portion 545 extends along the rear end plate 62. The heat insulating portion 545 is provided on the opposite side of the rear end plate 62, for example, across the rotation angle resolver 421.

[0051] A reducer 53 is installed on the EPU 50. The reducer 53 mechanically connects the motor electromagnetic circuit 61 to an external device. For example, the external device is mechanically connected to the rotating shaft of the motor electromagnetic circuit 61 via the reducer 53. The reducer 53 reduces the rotation of the motor electromagnetic circuit 61 and transmits it to the external device. As external devices, there are wheels, rotors, etc. The reducer 53 is configured to include a plurality of gears and is sometimes referred to as a reduction gear. The reducer 53 has a structure that matches the motor characteristics of the motor electromagnetic circuit 61. The reducer 53 is, for example, arranged on the side opposite to the inverter device 80 in the axial direction AD across the motor device 60.

[0052] <Structure Group A> like Figure 4As shown, the inverter device 80 has an inverter cover 99 in addition to the inverter housing 90. The inverter cover 99 is formed of a metal material or the like, has thermal conductivity, and can release the heat inside the inverter device 80 to the outside. The inverter cover 99 closes the opening of the inverter housing 90 to prevent foreign matter from invading the inside of the inverter. The inverter cover 99 is arranged on the side opposite to the motor device 60 across the inverter housing 90 in the axial direction AD. The inverter cover 99 is formed in a shape that bulges toward the side opposite to the motor device 60 in the axial direction AD. The inverter cover 99 has a flat plate portion extending in a direction orthogonal to the motor axis Cm and an annular wall portion extending annularly along the outer peripheral edge of the flat plate portion. In addition, the inverter cover 99 has the function of sealing the gap with the inverter housing 90, the function of combining with the inverter housing 90, and the function of reducing electromagnetic radiation or intrusion.

[0053] The inverter device 80 includes a high voltage substrate 510, a drive substrate 550, and a control substrate 560. The high voltage substrate 510 is a circuit substrate on which the inverter main circuit 81, the smoothing capacitor 145, and the EMI filter 150 are mounted. The drive substrate 550 is a circuit substrate on which the drive circuit 160 is mounted. The control substrate 560 is a circuit substrate on which the control circuit 161 is mounted.

[0054] The drive substrate 550 and the control substrate 560 are low voltage substrates to which a low voltage is applied. The low voltage is a voltage for driving the drive circuit 160 and the control circuit 161. In the inverter device 80, the voltage applied to the drive circuit 160 and the control circuit 161 is a low voltage. The substrates 510, 550, and 560 are sometimes referred to as electric wiring substrates and circuit boards.

[0055] like Figure 5 , Figure 6 As shown, the high voltage substrate 510, the drive substrate 550, and the control substrate 560 have inner peripheral ends 511, 551, 561 and outer peripheral ends 512, 552, 562. The control substrate 560 may not have the inner peripheral end 561. The drive substrate 550 and the control substrate 560 may also be integrated. In the high voltage substrate 510 and the drive substrate 550, the outer peripheral ends 512, 552 are located away from the inner peripheral surface 90b of the inverter outer peripheral wall 91 in the radial direction, and a gap is formed.

[0056] like Figure 5 As shown, the inverter device 80 includes a plurality of inverter fins 92 arranged in the circumferential direction CD to form an inverter fin group 93. The inverter fin group 93 is contained in an inverter housing 90.

[0057] The flanges 94 and 95 are convex portions provided on the outer peripheral surface 90a, and protrude radially outward from the inverter outer peripheral wall 91. The flanges 94 and 95 are provided between two inverter fin groups 93 adjacent to each other in the circumferential direction CD. The high-pressure side flange 94 and the low-pressure side flange 95 are arranged in the axial direction AD. The motor housing 70 is fixed to the high-pressure side flange 94 by a fixing member such as a bolt. The inverter cover 99 is fixed to the low-pressure side flange 95 by a fixing member, for example.

[0058] The inner sides of the inverter housing 90 and the motor housing 70 are cylindrical, and an O-ring 98 is sandwiched between each housing and an inner cylinder (not shown). The O-ring 98 seals the joint between the inverter housing 90 and the motor housing 70 .

[0059] The inverter device 80 includes a smoothing capacitor unit 580 and a filter component 524. The smoothing capacitor unit 580 and the filter component 524 are provided on the high voltage substrate 510 and are mechanically and electrically connected. The smoothing capacitor unit 580 is provided with a plurality of dispersed Figure 1 The smoothing capacitor 145.

[0060] The plurality of filter components 524 include a common mode coil section 525, a normal mode coil section 526, a Y capacitor section 527, and an X capacitor section 528. In addition, the common mode coil section 525 has a common mode coil 151. The normal mode coil section 526 has a normal mode coil 152. The Y capacitor section 527 has a Y capacitor 153. The X capacitor section 528 has an X capacitor 154.

[0061] A plurality of motor current sensors 146 are provided for the U phase, the V phase, and the W phase. A battery current sensor 147 is provided on one or both of the P line 141 and the N line 142. The current sensors 146 and 147 are provided on the high voltage substrate 510.

[0062] The inverter device 80 includes an arm switch unit 530. The arm switch unit 530 has the functions of the arm switch 86 and the diode 87 of the inverter main circuit 81. A plurality of arm switch units 530 are arranged and fixed in the circumferential direction CD along the inner peripheral surface 90b of the inverter housing 90. The plurality of arm switch units 530 are arranged along the outer peripheral ends 512 and 552 of the high voltage substrate 510 and the control substrate 560.

[0063] The inverter device 80 includes a fan device 540. The fan device 540 cools a high-temperature portion inside the inverter device 80 by circulating air inside the inverter device 80. The fan device 540 is an electric fan or a fan rotated by a motor shaft.

[0064] like Figure 7As shown, the fan device 540 is arranged in a position parallel to the substrate openings 513, 553, 563 in the axial direction AD. In order to promote air circulation between the substrates, the substrate openings 513, 553, 563 can also be formed in a shape that blocks a portion of the air of the fan device 540. The air passing through the substrate openings 513, 553, 563 passes between the substrates 510, 550, 560 and the inverter cover 99, between the outer shape and the inner surface of the housing, and returns to the fan from between the components mounted on the high-voltage substrate 510. The circulation path can also be reversed.

[0065] like Figure 7 to Figure 9 As shown, the inverter housing 90 has a component support portion 500 on the inner diameter side of the inverter outer peripheral wall 91. The component support portion 500 is composed of a plurality of beam portions 501 along the inner peripheral surface 90b in the circumferential direction CD. The beam portion 501 is a portion that does not interfere with the arm switch portion 530 of the inverter outer peripheral wall 91, and is arranged between the high-pressure side flange 94 and the low-pressure side flange 95 in the axial direction AD. The inverter fin group 93 is located between two adjacent beam portions 501 in the circumferential direction CD. The plurality of beam portions 501 are arranged to extend radially in the radial direction RD from the inner peripheral surface 90b toward the center or with the inverter axis Ci as the center and toward the radial outside. The inverter housing 90 has a beam connecting portion 502 to connect the plurality of beam portions 501 on the center side. One or more connecting openings 504 are provided in the beam connecting portion 502. The beam portion 501 extends in a frame-like manner in the radial direction RD, and is sometimes referred to as a support frame. In addition, the inverter outer peripheral wall 91 corresponds to the outer peripheral wall, and the inverter housing 90 corresponds to the case.

[0066] The component support 500 has substrates 510, 550, and 560 arranged in the axial direction AD. The component support 500 is provided between the high-voltage substrate 510 and the drive substrate 550 in the axial direction AD. The component support 500, the high-voltage substrate 510, and the control substrate 560 form a sandwich structure via a plurality of beams 501, thereby achieving a lightweight and strong structure.

[0067] The inverter case 90 is formed of a material having thermal conductivity and electrical conductivity, and thus, the inverter case 90 has a heat dissipation path and an electrical conduction path.

[0068] The heat dissipation path is formed by, for example, the inverter peripheral wall 91, the inverter fins 92, and the component support portion 500. In the heat dissipation path, for example, the heat of the component support portion 500 is released from the inverter fins 92 to the outside via the inverter peripheral wall 91.

[0069] The conductive path is a ground path, and is a grounding member (Japanese: グランド) or a grounding wire (Japanese: アース). The inverter housing 90 is formed by including an inverter peripheral wall 91, a high-voltage side flange 94, a low-voltage side flange 95, and a component support portion 500, and connects the Y capacitor portion 527 and the grounding members such as substrates 510, 550, and 560 to low impedance. The motor housing 70 and the inverter cover 99 form a grounding path via the flanges 94 and 95.

[0070] In the component support portion 500, a fan device 540 can be installed in the beam connection portion 502 to promote cooling inside the inverter. A beam opening 503 can be provided in the beam portion 501. The beam opening 503 is an opening portion provided for bolting a component installed on the high-voltage substrate 510 from the beam portion 501 side. For example, the beam opening 503 is an opening portion for bolting a busbar or a stud for passing a current from the high-voltage substrate 510 to a plurality of motor current sensors 146.

[0071] like Figure 8 As shown in FIG. 5 , the beam portion 501 and the beam connecting portion 502 of the component support portion 500 have screw holes 505 for fixing the high voltage substrate 510. Fig. 9 As shown, the beam portion 501 and the beam connecting portion 502 have a plurality of screw holes 506 for fixing the drive substrate 550 and the control substrate 560. The plurality of screw holes 505 include screw holes 505a for fixing only the substrate, screw holes 505b for fastening and fixing the current sensor and the substrate together, and screw holes 505c for fixing only the fan device 540, for example.

[0072] The high voltage substrate 510 and the drive substrate 550 correspond to plate members. The high voltage substrate 510 corresponds to a first plate member, and the drive substrate 550 corresponds to a second plate member.

[0073] like Figure 5 , Figure 6 As shown, the inverter device 80 has a switch group 530G composed of a plurality of arm switch parts 530. The switch group 530G is arranged in a row in the circumferential direction CD in a manner that the plurality of arm switch parts 530 are densely packed. A plurality of switch groups 530G are arranged in the circumferential direction CD along the inner peripheral surface 90b. The inner peripheral surface 90b may also be set to a polygonal shape, and a plurality of switch groups 530G may be arranged on the same surface. The plurality of switch groups 530G are arranged along the outer peripheral ends 512 and 552 relative to the high voltage substrate 510 and the drive substrate 550.

[0074] The plurality of arm switch parts 530 of the switch group 530G are connected in parallel, and the plurality of arm switch parts 530 correspond to the upper arm 84 and the lower arm 85 of the inverter main circuit 81 in the circuit diagram. For example, if one upper arm 84 has six arm switches 86 in the circuit diagram, the switch group 530G in the embodiment corresponding to the upper arm 84 has six arm switch parts 530. Similarly, one lower arm 85 forms a switch group 530G having six arm switch parts 530 in the circuit diagram.

[0075] For example, two switch groups 530G adjacent to each other in the circumferential direction CD are arranged so that the upper arm 84 and the lower arm 85 constituting one phase form a group. A point for extracting the motor current is provided in the high voltage substrate 510 near the middle position of these switch groups 530G. The switch group 530G corresponding to the upper arm 84 and the switch group 530G corresponding to the lower arm 85 of the arms 84 and 85 of one upper and lower arm circuit 83 are two switch groups 530G adjacent to each other in the circumferential direction CD.

[0076] like Figure 8 , Fig. 9 As shown, the switch group 530G is arranged between two adjacent beam portions 501 along the circumferential direction CD of the inner circumferential surface 90b of the inverter outer peripheral wall 91. The switch group 530G is located between two adjacent flanges 94 and 95 in the circumferential direction CD. The switch group 530G is located at a position overlapping with the inverter fin group 93 in the axial direction AD. The switch group 530G and the inverter fin group 93 are arranged in the axial direction AD with the inverter outer peripheral wall 91 interposed therebetween.

[0077] like Fig.10 As shown, the arm switch part 530 has a switch body 531. The switch body 531 is provided on the inner peripheral surface 90b as a cooling surface, for example, fixed to the inner peripheral surface 90b. The switch body 531 has components such as MOSFET and a protection part. The switch body 531 has a first plate surface 531a and a second plate surface 531b. The first plate surface 531a and the second plate surface 531b extend in a direction orthogonal to the radial direction RD.

[0078] The arm switch unit 530 has four terminals, namely, terminals 532 to 535, and is a 4-terminal type switch module. The terminals 532 to 535 are a drain terminal 532, a source terminal 533, a gate terminal 534, and a driver source terminal 535. The driver source terminal 535 is sometimes referred to as a Kelvin source terminal (Japanese: ケルビンソース terminal). The terminals 532 to 535 are equivalent to switch terminals.

[0079] The drain terminal 532 and the source terminal 533 are power terminals and are connected to the high voltage substrate 510. The gate terminal 534 and the driver source terminal 535 are control terminals and are connected to the control substrate 560. The terminals 532 to 535 extend from the switch body 531. The terminals 532 to 535 are arranged in the width direction of the switch body 531.

[0080] The switch body 531 is located at a position away from the outer peripheral end surface of the substrates 510, 550, and 560. The switch body 531 is located at a position away from the beam portion 501 in the axial direction AD. The drain terminal 532 and the source terminal 533 are mounted on the switch body 531 and the high-voltage substrate 510 at a position closer to the high-voltage side than the beam portion 501. The gate terminal 534 and the driver source terminal 53 extend along the axial direction AD through the beam portion 501 and are mounted on the switch body 531 and the drive substrate 550.

[0081] like Figure 5 As shown, the inverter device 80 has an inverter connector 96 and power lines 570 and 571. The inverter connector 96 connects the inverter device 80 to an external battery 31 or the like. The inverter connector 96 can be connected to a power cable. The inverter connector 96 protrudes radially outward from the inverter housing 90. Alternatively, the inverter connector 96 may be omitted and the power lines 570 and 571 may extend to the outside.

[0082] The power lines 570 and 571 are electrically connected to the high voltage substrate 510. The power lines 570 and 571 are connected to the arm switch unit 530 and the smoothing capacitor unit 580 through the filter component 524 from the high voltage substrate 510. The power line 570 is an electrical wiring forming the P line 141. The power line 571 is an electrical wiring forming the N line 142. The battery current sensor 147 is provided for either or both of the power line 570 and the power line 571. The motor current sensor 146 is provided on a bus bar drawn from the high voltage substrate 510. The bus bar is connected to the motor.

[0083] <Structure Group B> exist Figures 4 to 6 In the embodiment, the substrates 510, 550, and 560 include an insulating substrate and a wiring pattern. The insulating substrate has electrical insulation and is formed in a plate shape from a resin material or the like. The wiring pattern has electrical conductivity and is formed from a conductive material such as copper and aluminum.

[0084] The high-voltage substrate 510, the drive substrate 550 and the control substrate 560 are all formed in a plate shape and extend in a direction orthogonal to the axial direction AD. The substrates 510, 550, 560 extend in a ring shape with the inverter axis Ci as the center. The substrates 510, 550, 560 are formed in a circular plate shape as a whole. The substrates 510, 550, 560 are arranged along the axial direction AD with their respective plate surfaces facing each other. In the axial direction AD, the drive substrate 550 is arranged between the high-voltage substrate 510 and the control substrate 560. In the inverter device 80, in the axial direction AD, the high-voltage substrate 510 side is called the high-voltage side, and the drive substrate 550 side is called the low-voltage side. The motor device 60 is, for example, arranged on the high-voltage side of the inverter device 80.

[0085] like Fig.11 As shown, the high-voltage substrate 510 has a P busbar 601, an N busbar 602, an output busbar 603 and a ground busbar 604. Busbars 601 to 604 are included in the wiring pattern possessed by the high-voltage substrate 510. Busbars 601 to 604 are formed in a plate shape and extend in a direction orthogonal to the axial direction AD. Busbars 601 to 604 are conductors with conductivity, equivalent to plate-shaped conductors. Busbars 601 to 604 extend along the circumferential direction CD as a whole. Circumferential direction CD is equivalent to the extension direction. Busbars 601 to 604 are arranged inside the high-voltage substrate 510. In the high-voltage substrate 510, for example, busbars 601 to 604 and multiple insulating substrates are alternately stacked. Busbars 601 to 604 are sometimes referred to as substrate conductors. The high-voltage substrate 510 is equivalent to a power substrate.

[0086] exist Fig.12 In the figure, the P busbar 601 forms at least a part of the P line 141. The P busbar 601 is equivalent to a high potential conductor and a power conductor, and is sometimes referred to as a high potential busbar and a power busbar. The P busbar 601 has an outer peripheral P busbar 601a and an inner peripheral P busbar 601b. The P busbars 601a and 601b are conductive components such as busbar components formed of conductive materials. The P busbars 601a and 601b extend in a ring shape with the inverter axis Ci as the center, similar to the high-voltage substrate 510. The P busbars 601a and 601b are formed into a circular plate shape as a whole. The outer peripheral P busbar 601a and the inner peripheral P busbar 601b are arranged along the radial direction RD. The outer peripheral P busbar 601a is arranged at a position radially further outward than the inner peripheral P busbar 601b.

[0087] The outer peripheral P busbar 601a extends along the outer peripheral end 512 in the high voltage substrate 510. The outer peripheral P busbar 601a is arranged at a position parallel to the smoothing capacitor unit 580 in the axial direction AD. The outer peripheral P busbar 601a extends in the circumferential direction CD along the capacitor array 580R. The smoothing capacitor unit 580 may be arranged at a position extending from the outer peripheral P busbar 601a to at least one of the radially outer side and the radially inner side, or may be arranged at a position not extending.

[0088] The inner circumference P busbar 601b extends along the inner circumference end 511 in the high voltage substrate 510. The inner circumference P busbar 601b is arranged at a position parallel to the filter component 524 in the axial direction AD. The inner circumference P busbar 601b extends along the filter array 524R and in the circumferential direction CD. The filter component 524 can be arranged at a position extending from the inner circumference P busbar 601b to at least one of the radially outer side and the radially inner side, or can be arranged at a position not extending.

[0089] The outer P busbar 601a and the inner P busbar 601b are electrically connected to the power line 570 via wiring etc. The P busbar 601 may include three or more busbar members such as the P busbars 601a and 601b, or may include only one busbar member.

[0090] The N busbar 602 forms at least a portion of the N line 142. The N busbar 602 is equivalent to a low-potential conductor and a power conductor, and is sometimes referred to as a low-potential busbar and a power busbar. The N busbar 602 has an outer peripheral N busbar 602a and an inner peripheral N busbar 602b. The N busbars 602a and 602b are conductive components such as busbar components formed of conductive materials. The N busbars 602a and 602b extend in a ring shape with the inverter axis Ci as the center, similar to the high-voltage substrate 510. The N busbars 602a and 602b are formed in a disc shape as a whole. The outer peripheral N busbar 602a and the inner peripheral N busbar 602b are arranged along the radial direction RD. The outer peripheral N busbar 602a is arranged at a position radially further outward than the inner peripheral N busbar 602b.

[0091] The outer peripheral N busbar 602a extends along the outer peripheral end 512 in the high voltage substrate 510. The outer peripheral N busbar 602a is provided at a position parallel to the smoothing capacitor unit 580 in the axial direction AD. The outer peripheral N busbar 602a extends in the circumferential direction CD along the capacitor array 580R. The smoothing capacitor unit 580 may be provided at a position extending from the outer peripheral N busbar 602a to at least one of the radially outer side and the radially inner side, or may be provided at a position not extending.

[0092] The inner circumference N busbar 602b extends along the inner circumference end 511 in the high voltage substrate 510. The inner circumference N busbar 602b is arranged at a position parallel to the filter component 524 in the axial direction AD. The inner circumference N busbar 602b extends in the circumferential direction CD along the filter array 524R. The filter component 524 can be arranged at a position extending from the inner circumference N busbar 602b to at least one of the radially outer side and the radially inner side, or can be arranged at a position not extending.

[0093] The outer N busbar 602a and the inner N busbar 602b are electrically connected to the power supply line 571 via wiring etc. The N busbar 602 may include three or more busbar members such as the N busbars 602a and 602b, or may include only one busbar member.

[0094] exist Fig.13 In the embodiment, the output busbar 603 forms at least a part of the output line 143. The output busbar 603 is equivalent to an output conductor. The output busbar 603 is a conductive member such as a busbar member formed of a conductive material. The output busbar 603 is formed in a plate shape bent along the circumferential direction CD. A plurality of output busbars 603 are arranged along the outer peripheral end 512 and in the circumferential direction CD. Two output busbars 603 adjacent to each other in the circumferential direction CD are located at positions separated in the circumferential direction CD.

[0095] The output busbar 603 extends along the outer peripheral end 512 on the high-voltage substrate 510. The output busbar 603 is arranged at a position parallel to the smoothing capacitor unit 580 in the axial direction AD. The output busbar 603 extends along the capacitor column 580R and in the circumferential direction CD. The smoothing capacitor unit 580 can be arranged at a position extending from the output busbar 603 to at least one of the radial outer side and the radial inner side, or can be arranged at a position not extending. The output busbar 603 is arranged at a position closer to the radial outer side than the filter component 524. In addition, the output busbar 603 can also be arranged at a position parallel to the filter component 524 in the axial direction AD. In addition, the output busbar 603 can also be arranged at a position bridged on the outer peripheral P busbar 601a and the inner peripheral P busbar 601b in the radial direction RD.

[0096] The output busbars 603 are respectively provided corresponding to the plurality of phases. The plurality of output busbars 603 include output busbars 603 corresponding to the U phase, the V phase, and the W phase. For example, the output busbar 603 of the U phase is connected to the U phase coil of the motor electromagnetic circuit 61 in an energizable manner.

[0097] The high voltage substrate 510 has an output connection portion 514. The output connection portion 514 is connected to the output bus 603 in an electrically conductive manner. The output connection portion 514 is provided separately for each of the plurality of output busbars 603. An output cable such as an electrical wiring is connected to the output connection portion 514. The output cable and the output connection portion 514 together with the output busbar 603 form an output line 143. A current sensor 147 is provided for at least one of the output cable and the output connection portion 514. The output connection portion 514 is provided, for example, between two switch groups 530G adjacent to each other in the circumferential direction CD.

[0098] exist Fig.14In the embodiment, the grounding busbar 604 forms at least a part of the grounding path. The grounding busbar 604 is equivalent to a grounding conductor and is sometimes referred to as a grounding conductor. The grounding busbar 604 is a busbar component formed of a conductive material. The grounding busbar 604 is connected to the housing grounding piece. The grounding busbar 604 is connected to the inverter housing 90 in a manner that is electrically conductive with the grounding piece GND. For example, a fixing that fixes the high-voltage substrate 510 to the component support portion 500 passes through the grounding busbar 604 and is screwed into the threaded hole 505. The grounding busbar 604 is electrically conductive with the component support portion 500 via the fixing. By providing a plurality of such fixings, the grounding busbar 604 and the component support portion 500 are electrically conductive at a plurality of locations.

[0099] The grounding busbar 604 extends in a ring shape with the inverter axis Ci as the center, similarly to the P busbar 601 and the N busbar 602. The grounding busbar 604 is formed in a disk shape as a whole. The grounding busbar 604 extends in the radial direction RD in a manner of being mounted on the inner peripheral end 511 and the outer peripheral end 512. The grounding busbar 604 is, for example, in a state of being mounted on the outer peripheral P busbar 601a and the inner peripheral P busbar 601b in the radial direction RD.

[0100] The ground bus 604 is provided at a position parallel to both the smoothing capacitor unit 580 and the filter component 524 in the axial direction AD. The ground bus 604 extends in the circumferential direction CD along both the capacitor column 580R and the filter column 524R. The smoothing capacitor unit 580 may be provided at a position extending radially outward from the ground bus 604, or may be provided at a position not extending. The filter component 524 may be provided at a position extending radially inward from the ground bus 604, or may be provided at a position not extending.

[0101] like Fig.11 As shown, the high-voltage substrate 510 has a plurality of plate-shaped conductors such as busbars 601 to 604. In the high-voltage substrate 510, the busbars 601 to 604 are included in the plurality of plate-shaped conductors. The plurality of plate-shaped conductors respectively include a plurality of busbars 601 to 604. For example, two busbars 601 to 604 are respectively included in the plurality of plate-shaped conductors. The plurality of plate-shaped conductors overlap in the axial direction AD. In the plurality of plate-shaped conductors, a grounding busbar 604 is respectively provided at a pair of outermost positions. The outermost position of one of the pair of outermost positions is the position closest to the high-voltage side in the axial direction AD. The outermost position of the other side is the position closest to the low-voltage side in the axial direction AD.

[0102] In the axial direction AD, a plurality of busbars 601 to 603 are respectively arranged between a pair of grounding busbars 604. For example, two busbars 601 to 603 are respectively arranged between a pair of grounding busbars 604. The output busbar 603 is arranged between the P busbar 601 and the N busbar 602 in the axial direction AD. The output busbar 603 is located at a position adjacent to the P busbar 601 and the N busbar 602 in the axial direction AD. Of the P busbar 601 and the N busbar 602 adjacent to the output busbar 603 in the axial direction AD, the P busbar 601 is equivalent to the first plate portion, and the N busbar 602 is equivalent to the second plate portion.

[0103] The high voltage substrate 510 has a first busbar group 611 and a second busbar group 612. Each of these busbar groups 611 and 612 has a busbar 601 to 603. The busbar groups 611 and 612 are arranged between a pair of grounding busbars 604 in the axial direction AD. The first busbar group 611 and the second busbar group 612 overlap in the axial direction AD. The first busbar group 611 is arranged on the high voltage side of the second busbar group 612 in the axial direction AD. In any one of the first busbar group 611 and the second busbar group 612, an output busbar 603 is arranged between the P busbar 601 and the N busbar 602. The arrangement order of the busbars 601 to 603 is the same in the first busbar group 611 and the second busbar group 612. For example, from the high voltage side to the low voltage side, the P busbar 601, the output busbar 603, and the N busbar 602 are arranged in sequence.

[0104] The smoothing capacitor unit 580 includes a capacitor body 581 and capacitor terminals 582 and 583. The capacitor body 581 is provided on the high voltage substrate 510 and fixed to the high voltage substrate 510. The capacitor body 581 includes elements and a protection portion that form the smoothing capacitor 145. The capacitor body 581 is formed in a rectangular parallelepiped shape as a whole. The capacitor body 581 is provided on the first high voltage surface 510a of the high voltage substrate 510.

[0105] The capacitor terminals 582 and 583 are a P capacitor terminal 582 and an N capacitor terminal 583. The P capacitor terminal 582 is a terminal connected to the P bus bar 601. The N capacitor terminal 583 is a terminal connected to the N bus bar 602. The capacitor terminals 582 and 583 extend in the same direction from the capacitor body 581. The capacitor terminals 582 and 583 extend from a surface overlapping with the first high voltage surface 510a in the capacitor body 581 toward the low voltage side in the axial direction AD. The P capacitor terminal 582 is equivalent to a high capacitor terminal, and the N capacitor terminal 583 is equivalent to a low capacitor terminal.

[0106] like Fig.15 As shown, the upper and lower arm circuit 83 has an upper arm switch 86A and a lower arm switch 86B. The upper arm switch 86A is the arm switch 86 included in the upper arm 84. The lower arm switch 86B is the arm switch 86 included in the lower arm 85.

[0107] like Fig.15 , Fig.16 As shown, the plurality of arm switch parts 530 include an upper arm switch part 530A and a lower arm switch part 530B. The upper arm switch part 530A has an upper arm switch 86A and is equivalent to an upper switch part on the high potential side. The upper arm switch part 530A is connected to the P bus 601 and the output bus 603 in a manner that can be energized. The lower arm switch part 530B has a lower arm switch 86B and is equivalent to a lower switch part on the low potential side. The lower arm switch part 530B is connected to the output bus 603 and the N bus 602 in a manner that can be energized.

[0108] The plurality of switch groups 530G include an upper switch group 530GA and a lower switch group 530GB. The upper switch group 530GA includes a plurality of upper arm switch parts 530A, but does not include a lower arm switch part 530B. In the upper switch group 530GA, a plurality of upper arm switch parts 530A are arranged in the circumferential direction CD. The lower switch group 530GB includes a plurality of lower arm switch parts 530B, but does not include an upper arm switch part 530A. In the lower switch group 530GB, a plurality of lower arm switches 86B are arranged in the circumferential direction CD.

[0109] The upper arm switch section 530A and the lower arm switch section 530B constituting one upper and lower arm circuit 83 are included in an upper switch group 530GA and a lower switch group 530GB adjacent to each other in the circumferential direction CD. These upper switch groups 530GA and lower switch groups 530GB are included in one phase. For example, the upper switch group 530GA of the U phase and the lower switch group 530GB of the U phase are located at adjacent positions in the circumferential direction CD.

[0110] An output connection portion 514 is provided for the upper switch group 530GA and the lower switch group 530GB included in one phase. The output connection portion 514 is provided between the upper switch group 530GA and the lower switch group 530GB included in one phase in the circumferential direction CD. The output connection portion 514 is connected to the output bus 603 between the plurality of upper source terminals 533A and the plurality of lower drain terminals 532B in the circumferential direction CD.

[0111] The smoothing capacitor unit 580 is electrically connected in parallel with the upper arm switching unit 530A and the lower arm switching unit 530B. The smoothing capacitor unit 580 is electrically connected to the P bus bar 601 and the N bus bar 602. The smoothing capacitor unit 580 corresponds to a capacitor component and a parallel component.

[0112] like Figure 12 to Figure 14As shown, the inverter device 80 has a capacitor bank 580G. The capacitor bank 580G has a plurality of smoothing capacitor units 580. In the capacitor bank 580G, a plurality of smoothing capacitor units 580 are densely arranged in a row along the outer peripheral end 512 and in the circumferential direction CD. A plurality of capacitor banks 580G are arranged along the outer peripheral end 512 and in the circumferential direction CD. The capacitor bank 580G is arranged side by side with the switch bank 530G in the radial direction RD. For example, one capacitor bank 580G and one switch bank 530G are arranged in the radial direction RD.

[0113] like Fig.16 As shown, the plurality of smoothing capacitor units 580 include an upper capacitor unit 580A and a lower capacitor unit 580B. The upper capacitor unit 580A is arranged in a position parallel to the upper arm switch unit 530A in the radial direction RD. The upper capacitor unit 580A is located at a position radially away from the upper arm switch unit 530A. The upper capacitor unit 580A is located in a position parallel to the upper switch group 530GA in the radial direction RD and radially away from the upper switch group 530GA. The upper capacitor unit 580A is equivalent to the upper capacitor component and the first capacitor component. The radial direction RD is equivalent to an orthogonal direction orthogonal to the parallel direction.

[0114] The lower capacitor unit 580B is arranged in a position parallel to the lower arm switch unit 530B in the radial direction RD. The lower capacitor unit 580B is located at a position radially away from the lower arm switch unit 530B. The lower capacitor unit 580B is located in a position parallel to the lower switch group 530GB in the radial direction RD and radially away from the lower switch group 530GB. The lower capacitor unit 580B is equivalent to the lower capacitor component and the second capacitor component.

[0115] The upper capacitor portion 580A and the lower capacitor portion 580B are arranged in opposite directions in the radial direction RD. In one of the upper capacitor portion 580A and the lower capacitor portion 580B, the P capacitor terminal 582 is located at a position away from the N capacitor terminal 583 in the radial direction outward. In the other, the N capacitor terminal 583 is located at a position away from the P capacitor terminal 582 in the radial direction outward. For example, in the upper capacitor portion 580A, the P capacitor terminal 582 is located at a position away from the N capacitor terminal 583 in the radial direction outward. In the lower capacitor portion 580B, the N capacitor terminal 583 is located at a position away from the P capacitor terminal 582 in the radial direction outward.

[0116] In the high voltage substrate 510, the P capacitor terminal 582 of the upper capacitor part 580A and the N capacitor terminal 583 of the lower capacitor part 580B are arranged side by side in the circumferential direction CD. Similarly, the N capacitor terminal 583 of the upper capacitor part 580A and the P capacitor terminal 582 of the lower capacitor part 580B are arranged side by side in the circumferential direction CD.

[0117] The plurality of capacitor groups 580G include an upper capacitor group 580GA and a lower capacitor group 580GB. The upper capacitor group 580GA includes a plurality of upper capacitor sections 580A, but does not include a lower capacitor section 580B. The upper capacitor group 580GA is located in a position parallel to the upper switch group 530GA in the radial direction RD and radially away from the upper switch group 530GA. The lower capacitor group 580GB includes a plurality of lower capacitor sections 580B, but does not include an upper capacitor section 580A. The lower capacitor group 580GB is located in a position parallel to the lower switch group 530GB in the radial direction RD and radially away from the lower switch group 530GB. The upper capacitor group 580GA is equivalent to the first capacitor group, and the lower capacitor group 580GB is equivalent to the second capacitor group.

[0118] like Fig.15 As shown, in the inverter device 80, inductances L601 to L603 are easily generated as parasitic inductances parasitic on the busbars 601 to 603. The inductances L601 to L603 can also be said to be parasitic on the lines 141 to 143. The inductances L601 to L603 are P inductance L601, N inductance L602, and output inductance L603. P inductance L601 is a parasitic inductance generated in the P busbar 601. N inductance L602 is a parasitic inductance generated in the N busbar 602. Output inductance L603 is a parasitic inductance generated in the output busbar 603.

[0119] When the inductors L601 to L603 are parasitic on the busbars 601 to 603, a voltage drop occurs due to the inductors L601 to L603. In this case, a potential difference corresponding to the voltage generated by the inductors L601 to L603 occurs in the arm switch unit 530. For example, if the inductor L601 is generated between the two drain terminals 532 connected to the P busbar 601, a difference in the potential of the two drain terminals 532 occurs corresponding to the voltage generated by the inductor L601. Therefore, a potential difference occurs between the two arm switch units 530 having the two drain terminals 532.

[0120] In addition, Fig.15 In order to facilitate the illustration, a plurality of inductors L601 to L603 are arranged along the busbars 601 to 603 for illustration. In addition, a Y capacitor 153 is connected to the ground busbar 604. As the Y capacitor 153, there are Y capacitors 153 connected to the ground busbar 604 and the P busbar 601 and Y capacitors 153 connected to the ground busbar 604 and the N busbar 602. The Y capacitor unit 527 is connected to the P busbar 601 or the N busbar 602 in a manner that allows electricity to flow, and on the other hand, is connected to the ground busbar 604 in a manner that conducts with the ground GND.

[0121] In the inverter device 80, an inductance L580 is easily generated as a parasitic inductance parasitic on the smoothing capacitor unit 580. The inductance L580 is generated in the smoothing capacitor unit 580. The inductance L580 is generated, for example, in a current conduction path connected to the smoothing capacitor 145 in the smoothing capacitor unit 580. The inductance L580 is generated in the current conduction paths between the smoothing capacitor 145 and the P bus 601 and between the smoothing capacitor 145 and the N bus 602, respectively.

[0122] In the arm switch unit 530, an inductance L530 is easily generated as a parasitic inductance parasitic on the arm switch 86. The inductance L530 is generated in the arm switch unit 530. The inductance L530 is generated, for example, in a current path connected to the arm switch 86 in the arm switch unit 530. The inductance L530 is generated in a current path between the arm switch 86 and the P bus 601 or the N bus 602 and between the arm switch 86 and the output bus 603.

[0123] like Fig.11 , Fig.17 As shown, a plurality of through holes 515 are provided on the high voltage substrate 510. The arm switch unit 530 and the smoothing capacitor unit 580 are connected to the bus bars 601 to 603 through the through holes 515 in an electrically conductive manner. In the arm switch unit 530, the drain terminal 532 and the source terminal 533 are respectively inserted into the through holes 515. These drain terminals 532 and source terminals 533 are connected to one of the bus bars 601 to 603. In the smoothing capacitor unit 580, the P capacitor terminal 582 and the N capacitor terminal 583 are respectively inserted into the through holes 515. The P capacitor terminal 582 and the N capacitor terminal 583 are connected to the P bus bar 601 or the N bus bar 602.

[0124] The plurality of through holes 515 include an upper switch hole 515a, a lower switch hole 515b, an upper capacitor hole 515c, and a lower capacitor hole 515d. A plurality of switch holes 515a and 515b are arranged along the outer peripheral end 512 on the high-voltage substrate 510. The terminals 532 and 533 of the upper arm switch portion 530A are inserted through the upper switch hole 515a. The upper switch hole 515a is arranged at a position overlapping with the upper arm switch portion 530A in the axial direction AD. The terminals 532 and 533 of the lower arm switch portion 530B are inserted through the lower switch hole 515b. The lower switch hole 515b is arranged at a position overlapping with the lower arm switch portion 530B in the axial direction AD.

[0125] The capacitor holes 515c and 515d are arranged in a plurality in the radial direction RD and in a plurality in the circumferential direction CD. The capacitor terminals 582 and 583 of the smoothing capacitor unit 580 are inserted through the upper capacitor hole 515c. The upper capacitor hole 515c is provided at a position overlapping with the upper capacitor unit 580A in the axial direction AD. The capacitor terminals 582 and 583 of the smoothing capacitor unit 580 are inserted through the lower capacitor hole 515d. The lower capacitor hole 515d is provided at a position overlapping with the lower capacitor unit 580B in the axial direction AD.

[0126] like Fig.17 As shown, in the upper arm switch section 530A, the upper drain terminal 532A and the upper source terminal 533A are respectively inserted into the upper switch hole 515a. The upper drain terminal 532A and the upper source terminal 533A are the drain terminal 532 and the source terminal 533 of the upper arm switch section 530A. The upper drain terminal 532A is connected to the P bus 601 through the upper switch hole 515a in an electrically conductive manner. The upper source terminal 533A is connected to the output bus 603 through the upper switch hole 515a in an electrically conductive manner. The upper drain terminal 532A is equivalent to the upper input terminal, and the upper source terminal 533A is equivalent to the upper output terminal.

[0127] In the lower arm switch section 530B, the lower drain terminal 532B and the lower source terminal 533B are separately inserted into the lower switch hole 515b. The lower drain terminal 532B and the lower source terminal 533B are the drain terminal 532 and the source terminal 533 of the lower arm switch section 530B. The lower drain terminal 532B is connected to the output bus 603 through the lower switch hole 515b in an electrically conductive manner. The lower source terminal 533B is connected to the N bus 602 through the lower switch hole 515b in an electrically conductive manner. The lower drain terminal 532B is equivalent to the lower input terminal, and the lower source terminal 533B is equivalent to the lower output terminal.

[0128] In the upper capacitor section 580A, the upper P capacitor terminal 582A and the upper N capacitor terminal 583A are individually inserted into the upper capacitor hole 515c. The upper P capacitor terminal 582A and the upper N capacitor terminal 583A are the P capacitor terminal 582 and the N capacitor terminal 583 of the upper capacitor section 580A. The upper P capacitor terminal 582A is electrically connected to the P bus bar 601 through the upper capacitor hole 515c. The upper N capacitor terminal 583A is electrically connected to the N bus bar 602 through the upper capacitor hole 515c.

[0129] In the lower capacitor section 580B, the lower P capacitor terminal 582B and the lower N capacitor terminal 583B are individually inserted into the lower capacitor hole 515d. The lower P capacitor terminal 582B and the lower N capacitor terminal 583B are the P capacitor terminal 582 and the N capacitor terminal 583 of the lower capacitor section 580B. The lower P capacitor terminal 582B is electrically connected to the P bus bar 601 through the lower capacitor hole 515d. The lower N capacitor terminal 583B is electrically connected to the N bus bar 602 through the lower capacitor hole 515d.

[0130] In the high-voltage substrate 510, as a whole, the terminals 532A and 533A of the upper arm switch part 530A and the terminals 582A and 583A of the upper capacitor part 580A are arranged in the radial direction RD. The terminals 582A and 583A of the upper capacitor part 580A are located at positions away from the terminals 532A and 533A of the upper arm switch part 530A in the radial direction. Similarly, the terminals 532B and 533B of the lower arm switch part 530B and the terminals 582B and 583B of the lower capacitor part 580B are arranged in the radial direction RD. The terminals 582B and 583B of the lower capacitor part 580B are located at positions away from the terminals 532B and 533B of the lower arm switch part 530B in the radial direction.

[0131] The arm switch unit 530 and the smoothing capacitor unit 580 are connected to the busbars 601 to 603 in the first busbar group 611 and the second busbar group 612, respectively. The connection structure of the arm switch unit 530 and the smoothing capacitor unit 580 and the busbars 601 to 603 is the same in the first busbar group 611 and the second busbar group 612. Figure 16 to Figure 19 In FIG. 6 , the second busbar group 612 is omitted. Figure 7 In the figure, a top view of the high voltage substrate 510, a top view of the P bus bar 601, a top view of the output bus bar 603, and a top view of the N bus bar 602 are arranged in order from the top.

[0132] like Fig.18 , Fig.19 As shown, in the high voltage substrate 510, currents IpA, IpB, InA, InB, IoA, and IoB flow. The currents IpA, IpB, InA, InB, IoA, and IoB flow in the first busbar group 611 and the second busbar group 612 in the same manner. In this embodiment, the currents IpA, IpB, InA, InB, IoA, and IoB flowing in the first busbar group 611 are described. The description of the currents IpA, IpB, InA, InB, IoA, and IoB flowing in the second busbar group 612 is omitted.

[0133] In the output bus 603, an upper output current IoA and a lower output current IoB flow. The output currents IoA and IoB flow in the circumferential direction CD as a whole. The output currents IoA and IoB flow from the upper switch group 530GA to the lower switch group 530GB in one phase as a whole. In detail, the upper output current IoA flows from the upper source terminal 533A toward the output connection portion 514 and in the circumferential direction CD. The lower output current IoB flows from the output connection portion 514 toward the lower drain terminal 532B and in the circumferential direction CD. The upper output current IoA and the lower output current IoB are equivalent to the output current.

[0134] An overlapping area AO exists in the high-voltage substrate 510. The overlapping area AO is an area overlapping with the output currents IoA and IoB flowing through the output bus 603. The overlapping area AO exists separately for each of the multiple phases. The overlapping area AO exists separately for each of the multiple output bus 603, for example. The overlapping area AO is an area overlapping with the upper switch group 530GA and the lower switch group 530GB included in one phase in the bus 601 to 603. The overlapping area AO includes the entire bus 601 to 603 in the radial direction RD. In addition, the overlapping area AO includes an area in which the arm switch unit 530 and the smoothing capacitor unit 580 are provided in the circumferential direction CD.

[0135] The overlapping area AO extends in the circumferential direction CD in a manner spanning the farthest upper component 530Af and the farthest lower component 530Bf. The farthest upper component 530Af is the upper arm switch unit 530A located at the farthest position from the lower switch group 530GB among the multiple upper arm switch units 530A included in the upper switch group 530GA. The farthest upper component 530Af is located at the end position on the opposite side of the lower switch group 530GB in the upper switch group 530GA. The farthest lower component 530Bf is the lower arm switch unit 530B located at the farthest position from the upper switch group 530GA among the multiple lower arm switch units 530B included in the lower switch group 530GB. The farthest lower component 530Bf is located at the end position on the opposite side of the upper switch group 530GA in the lower switch group 530GB.

[0136] The overlapping region AO is in a state of being arranged across the terminals 532A, 533A of the farthest upper part 530Af and the terminals 532B, 533B of the farthest lower part 530Bf. The overlapping region AO includes these terminals 532A, 533A, 532B, 533B. The overlapping region AO includes at least the upper source terminal 533A of the farthest upper part 530Af and the lower drain terminal 532B of the farthest lower part 530Bf.

[0137] In the P bus 601, an upper P current IpA and a lower P current IpB flow. The P currents IpA and IpB flow in the circumferential direction CD as a whole. The P currents IpA and IpB flow from the upper capacitor group 580GA and the lower capacitor group 580GB to the upper switch group 530GA in one phase as a whole. The P currents IpA and IpB flow in the circumferential direction CD in the opposite direction to the output currents IoA and IoB as a whole. Specifically, the upper P current IpA flows from the upper P capacitor terminal 582A toward the upper drain terminal 532A and in the circumferential direction CD. The lower P current IpB flows from the lower P capacitor terminal 582B toward the upper drain terminal 532A and in the circumferential direction CD. The lower P current IpB flows in the circumferential direction CD in the opposite direction to the output currents IoA and IoB. The P currents IpA and IpB correspond to the high potential current and the parallel current.

[0138] In the N bus 602, an upper N current InA and a lower N current InB flow. The N currents InA and InB flow in the circumferential direction CD as a whole. The N currents InA and InB flow from the lower switch group 530GB to the upper capacitor group 580GA and the lower capacitor group 580GB in one phase as a whole. The N currents InA and InB flow in the circumferential direction CD in the opposite direction to the output currents IoA and IoB as a whole. Specifically, the upper N current InA flows from the lower source terminal 533B toward the upper N capacitor terminal 583A and in the circumferential direction CD. The lower N current InB flows from the lower source terminal 533B toward the lower N capacitor terminal 583B and in the circumferential direction CD. The lower N current InB flows in the circumferential direction CD in the opposite direction to the output currents IoA and IoB. The N currents InA and InB correspond to the low potential current and the parallel current.

[0139] The P currents IpA and IpB and the N currents InA and InB flow in the same direction in the circumferential direction CD as a whole, but flow in opposite directions in the radial direction RD. This is because the P capacitor terminals 582A and 582B and the N capacitor terminals 583A and 583B are arranged along the radial direction RD in both the upper capacitor portion 580A and the lower capacitor portion 580B. For example, the lower P current IpB flows from the lower P capacitor terminal 582B toward the upper drain terminal 532A while flowing in the circumferential direction CD and toward the radial outside. In addition, the lower N current InB flows from the lower source terminal 533B toward the upper N capacitor terminal 583A while flowing in the circumferential direction CD and toward the radial inside.

[0140] In the P bus 601, the upper P current IpA flows into the upper drain terminal 532A from the upper P capacitor terminal 582A located radially outward from the upper N capacitor terminal 583A. The lower P current IpB flows into the upper drain terminal 532A from the lower P capacitor terminal 582B located radially inward from the lower N capacitor terminal 583B. As described above, the distance that the upper P current IpA flows in the radial direction RD is different from the distance that the lower P current IpB flows in the radial direction RD. In the present embodiment, the distance that the upper P current IpA flows radially outward is shorter than the distance that the lower P current IpB flows radially outward.

[0141] In the N bus bar 602, the lower N current InB flowing out from the lower source terminal 533B flows into the lower N capacitor terminal 583B which is radially outward from the lower P capacitor terminal 582B. In addition, the upper N current InA flowing out from the lower source terminal 533B flows into the upper N capacitor terminal 583A which is radially inward from the upper P capacitor terminal 582A. As described above, the distance that the lower N current InB flows in the radial direction RD is different from the distance that the upper N current InA flows in the radial direction RD. In the present embodiment, the distance that the lower N current InB flows inward in the radial direction is shorter than the distance that the upper N current InA flows inward in the radial direction.

[0142] exist Fig.19 In the figure, for the convenience of illustration, multiple arrows are used to illustrate the currents IpA, IpB, InA, InB, IoA, and IoB. In fact, the currents IpA, IpB, InA, InB, IoA, and IoB flow through the busbars 601 to 603 together.

[0143] For example, the lower P current IpB flows from the plurality of lower P capacitor terminals 582B toward the plurality of upper drain terminals 532A through the P bus bar 601. Therefore, the lower P current IpB increases as it approaches the output connection portion 514 in the circumferential direction CD. Then, the lower P current IpB passes through the output connection portion 514 and decreases as it moves away from the output connection portion 514. Similarly to the lower P current IpB, the upper N current InA increases as it approaches the output connection portion 514 in the circumferential direction CD. Moreover, the upper N current InA passes through the output connection portion 514 and decreases as it moves away from the output connection portion 514.

[0144] The upper output current IoA increases as it approaches the output connection portion 514 in the circumferential direction CD, and reaches the output connection portion 514. The lower output current IoB decreases as it moves away from the output connection portion 514 in the circumferential direction CD. In the high-voltage substrate 510, the region where the upper output current IoA increases as it approaches the output connection portion 514 overlaps with the region where the lower P current I pB and the upper N current I nA increase as they approach the output connection portion 514 in the axial direction AD. Therefore, it is easy to produce a situation where the magnetic field generated by the upper output current IoA, the magnetic field generated by the lower P current I pB, and the magnetic field generated by the upper N current I nA cancel each other out.

[0145] In addition, the region where the lower output current IoB decreases as it moves away from the output connection portion 514 overlaps with the region where the lower P current IpB and the upper N current InA decrease as they move away from the output connection portion 514 in the axial direction AD. Therefore, it is easy to produce a situation where the magnetic field generated by the lower output current IoB, the magnetic field generated by the lower P current IpB, and the magnetic field generated by the upper N current InA cancel each other out. Therefore, the inductances L601 to L603 generated in the busbars 601 to 603 are easy to reduce.

[0146] As described above, the currents IpA, IpB, InA, InB, IoA, and IoB are set to flow in such a way as to reduce the inductances L601 to L603 in the high voltage substrate 510. By reducing the inductances L601 to L603 generated in the bus bars 601 to 603, it is possible to suppress the disadvantages such as the reduction in switching accuracy of the arm switch unit 530 caused by the inductances L601 to L603.

[0147] As a defect caused by the inductors L601 to L603, in addition to the reduction in switching accuracy, there is also current imbalance. Current imbalance is a difference in the switching current Id of the plurality of arm switch units 530 in a structure in which the plurality of arm switch units 530 are connected in parallel. Fig.18 As shown, the switching current Id is a current flowing through the arm switch section 530. The switching current Id is a current flowing through the drain of the arm switch 86 in the arm switch section 530, and is sometimes referred to as a drain current.

[0148] The current imbalance will be described by taking the case where two upper arm switch units 530A in the inverter device 80 are connected in parallel as an example. Fig. 20 As shown, as two upper arm switch units 530A, a first switch unit 530A1 and a second switch unit 530A2 are connected in parallel. Fig. 20 , only one upper and lower arm circuit 83 is shown among the plurality of upper and lower arm circuits 83 included in the inverter device 80. Also, only two upper arms 84 and two lower arms 85 among the plurality of upper arms 84 and the plurality of lower arms 85 included in the one upper and lower arm circuit 83 are shown.

[0149] The inverter device 80 has a driving power supply 620. The driving power supply 620 applies a control voltage for controlling the switch of the arm switch unit 530 to the arm switch unit 530. The driving power supply 620 is provided in the driving circuit 160, for example. The driving power supply 620 is connected to the gate terminal 534 and the driver source terminal 535 in a manner that allows power to be supplied. The driving power supply 620 is connected to the gate terminal 534, for example, via a gate resistor R534. The parasitic inductance generated in the driver source path is referred to as an inductance L534. The driver source path is an energized path that connects the driving power supply 620 to the driver source terminal 535.

[0150] In the arm switch section 530, the control voltage from the drive power supply 620 is input to the gate terminal 534. The gate terminal 534 is equivalent to the input control terminal. The gate voltage Vg of the gate terminal 534 becomes a value corresponding to the control voltage. The gate voltage Vg is the potential of the gate terminal 534. In the arm switch section 530, along with the input of the control voltage to the gate terminal 534, the current is output from the driver source terminal 535. The driver source terminal 535 is equivalent to the output control terminal.

[0151] The driver source voltage Vks of the driver source terminal 535 increases or decreases according to the source voltage Vs of the source terminal 533. The driver source voltage Vks is the potential of the driver source terminal 535. The source voltage Vs is the potential of the source terminal 533. In the arm switch section 530, the parasitic inductance generated in the current path between the drain terminal 532 and the arm switch 86 is referred to as the inductance L530d. In addition, the parasitic inductance generated in the current path between the arm switch 86 and the source terminal 533 is referred to as the inductance L530S. The driver source voltage Vks becomes a potential higher than the source voltage Vs by the amount of the inductance L530S.

[0152] The source voltage Vs is higher than the potential of the output line 143 by at least the amount of the inductor voltage Vl. The inductor voltage Vl is a voltage generated by the inductor Ls. The inductor Ls is a parasitic inductance generated in the source path. The source path is a current-carrying path that connects the source terminal 533 to the output line 143. At least a portion of the source path is formed by the output bus 603. The inductor Ls includes the inductance L603 generated in the output bus 603. Therefore, the larger the inductance L603 generated in the output bus 603, the larger the inductance Ls generated in the source path, and the more the inductor voltage Vl increases.

[0153] For example, unlike the present embodiment, a comparative example 1 is assumed in which the flow of currents IpA, IpB, InA, InB, IoA, and IoB does not become a flow that reduces the inductances L601 to L603. In this comparative example 1, since the inductance L603 generated in the output bus 603 is large, the inductance Ls generated in the source path becomes large. As a result, the inductance voltage Vl increases, and the source voltage Vs becomes higher. In the arm switch unit 530, when the source voltage Vs increases, the driver source voltage Vks also increases.

[0154] In Comparative Example 1, the source voltage Vs in the first switch section 530A1 and the source voltage Vs in the second switch section 530A2 are likely to be different. For example, if the separation distance between the second switch section 530A2 and the output connection section 514 is greater than the separation distance between the first switch section 530A1 and the output connection section 514, the source path of the first switch section 530A1 is longer than the source path of the second switch section 530A2. In this way, the inductance Ls2 for the second switch section 530A2 is greater than the inductance Ls1 for the first switch section 530A1. Therefore, the inductance voltage Vl2 for the second switch section 530A2 is greater than the inductance voltage Vl1 for the first switch section 530A1. Furthermore, the source voltage Vs in the second switch section 530A2 is higher than the source voltage Vs in the first switch section 530A1 , and the driver source voltage Vks in the second switch section 530A2 is higher than the driver source voltage Vks in the first switch section 530A1 .

[0155] If a potential difference is generated between the driver source voltage Vks in the first switching section 530A1 and the second switching section 530A2, a circulating current Ik flows between the first switching section 530A1 and the second switching section 530A2. This potential difference is sometimes referred to as a source potential difference.

[0156] In the arm switch unit 530, a switching current Id flows according to the gate-source voltage Vgs. The gate-source voltage Vgs is the potential difference between the gate voltage Vg and the driver source voltage Vks. For example, the larger the gate-source voltage Vgs is, the larger the switching current Id is likely to be.

[0157] As described above, when the circulating current Ik flows in Comparative Example 1, the gate-source voltage Vgs2 of the second switch section 530A2 becomes smaller than the gate-source voltage Vgs1 of the first switch section 530A1. This is because the gate voltages Vg of the first switch section 530A1 and the second switch section 530A2 are the same, while the driver source voltage Vks of the second switch section 530A2 is higher than the driver source voltage Vks of the first switch section 530A1.

[0158] like Fig.21As shown, in the first switch section 530A1 and the second switch section 530A2, since the gate-source voltages Vgs1 and Vgs2 are different, the switch currents Id1 and Id2 are likely to be different. As described above, if the inductance Ls2 is larger than the inductance Ls1, the gate-source voltage Vgs2 in the second switch section 530A2 is likely to be smaller than the gate-source voltage Vgs1 in the first switch section 530A1. Therefore, the switch current Id2 in the second switch section 530A2 is likely to be smaller than the switch current Id1 in the first switch section 530A1. In this way, current imbalance occurs in the first switch section 530A1 and the second switch section 530A2.

[0159] If current imbalance occurs in the plurality of arm switch units 530, it is considered that the degree of degradation due to aging or the like will differ. In other words, the degree of degradation will vary in the plurality of arm switch units 530. For example, as in Comparative Example 1, when the switch current Id1 is greater than the switch current Id2, the first switch unit 530A1 is more likely to deteriorate than the second switch unit 530A2 because a larger current always flows.

[0160] On the other hand, in the present embodiment, the flow of the currents IpA, IpB, InA, InB, IoA, and IoB is a flow that reduces the inductances L601 to L603.

[0161] In addition, in this embodiment, the arm switch unit 530 has a driver source terminal 535. In addition, in this embodiment, Fig. 20 In the first switch section 530A1 and the second switch section 530A2 shown in the figure, the inductances Ls1 and Ls2 are included in the inductance L603. Therefore, by reducing the inductance L603, the inductances Ls1 and Ls2 can be reduced. The smaller the inductances Ls1 and Ls2, the smaller the difference between the inductances Ls1 and Ls2 becomes, and the smaller the circulating current Ik becomes. Moreover, the smaller the circulating current Ik, the smaller the difference between the switching currents Id1 and Id2 becomes, and the less likely the current imbalance will occur. In addition, the smaller the circulating current Ik, the smaller the difference between the switching currents Id1 and Id2 becomes. For example, if the difference between the inductances Ls1 and Ls2 can be made zero, the circulating current Ik can be reduced as much as possible, and the current imbalance will hardly occur. As a result, the degree of deterioration of the first switch section 530A1 and the second switch section 530A2 is less likely to deviate.

[0162] For example, unlike the present embodiment, a comparative example 2 is assumed in which the arm switch unit 530 does not have the driver source terminal 535. In the comparative example 2, Fig. 22As shown, the driving power supply 620 is connected to the gate terminal 534 and the source terminal 533 in a manner that allows current to flow. Therefore, in Comparative Example 2, the circulating current Ik does not flow through the inductor L530S. The circulating current Ik becomes a current corresponding to the inductor Ls and the inductor L530S.

[0163] <Structure Group C> like Fig.23 As shown, a plurality of arm switch parts 530 are arranged along the outer peripheral end 512 and in the circumferential direction CD relative to the high-voltage substrate 510. These arm switch parts 530 are also arranged along the outer peripheral end 552 and in the circumferential direction CD relative to the drive substrate 550. A plurality of arm switch parts 530 are arranged on the inner peripheral surface 90b relative to the inverter outer peripheral wall 91. The arm switch row 530R extends along the outer peripheral ends 512, 552 and in the circumferential direction CD, and is annular. In the high-voltage substrate 510 and the drive substrate 550, the outer peripheral ends 512, 552 extend continuously in the circumferential direction CD.

[0164] like Fig.24 , Fig.25 As shown, the switch body 531 has a body base 537 and a body heat dissipation portion 538. The body base 537 is formed of a resin material or the like and has electrical insulation. The body base 537 is, for example, molded resin. The body base 537 forms the outer contour of the switch body 531. The body base 537 forms at least a portion of each of the first plate surface 531a, the second plate surface 531b, the body base end portion 531c, and the body front end portion 531d.

[0165] The main body heat sink 538 is formed of a metal material or the like and has thermal conductivity. The main body heat sink 538 has, for example, higher thermal conductivity than the main body base 537. The main body heat sink 538 is, for example, a metal plate formed in a plate shape. The main body heat sink 538 is in a state of being buried in the main body base 537. In the switch body 531, the terminals 532 to 535 and the like are electrically insulated from the main body heat sink 538 by the main body base 537.

[0166] In the switch body 531, the heat dissipation of the second plate surface 531b is improved by the main body heat dissipation portion 538. The heat dissipation of the second plate surface 531b is higher than that of the first plate surface 531a. In the case where heat is generated in the switch body 531, the heat dissipation from the second plate surface 531b is greater than the heat dissipation from the first plate surface 531a. The main body heat dissipation portion 538 is exposed from the second plate surface 531b, and on the other hand, is not exposed from the first plate surface 531a. At least a portion of the main body heat dissipation portion 538 forms the second plate surface 531b. For example, the second plate surface 531b includes a portion formed by the main body base 537 and a portion formed by the main body heat dissipation portion 538. The main body heat dissipation portion 538 contacts the inner peripheral surface 90b on the second plate surface 531b. In addition, the first plate surface 531a is equivalent to the inner plate surface, and the second plate surface 531b is equivalent to the outer plate surface.

[0167] In the arm switch section 530, power from the battery 31 is supplied to the drain terminal 532 and the source terminal 533. The drain terminal 532 and the source terminal 533 are power terminals to which power is supplied, and are equivalent to power terminals. The drain terminal 532 and the source terminal 533 are connected to the high-voltage substrate 510 in a manner that allows electricity to flow. The high-voltage substrate 510 is equivalent to a power connection object and a power substrate, and the peripheral end 512 is equivalent to a power peripheral end. The drain terminal 532 is connected to the P bus 601 or the output bus 603 in a manner that allows electricity to flow. The source terminal 533 is connected to the output bus 603 or the N bus 602. In Fig.24 In the figure, the P bus 601, the N bus 602 and the output bus 603 are collectively illustrated, and the illustration of the ground bus 604 is omitted.

[0168] like Fig.24 As shown, in the high voltage substrate 510, the drain terminal 532 and the source terminal 533 are connected to the through hole 515. The drain terminal 532 and the source terminal 533 are connected to the P bus 601, the N bus 602 or the output bus 603 in a state where they are inserted into the through hole 515 in an electrically conductive manner. A plurality of through holes 515 are arranged in the high voltage substrate 510 at least along the outer peripheral end 512 and in the circumferential direction CD. The through holes 515 are respectively included in the connection portion between the drain terminal 532 and the high voltage substrate 510 and the connection portion between the source terminal 533 and the high voltage substrate 510. In addition, the P bus 601, the N bus 602 and the output bus 603 are equivalent to the power bus.

[0169] The gate terminal 534 and the driver source terminal 535 are terminals for controlling the conversion of electric power by the switch of the arm switch 86, and are equivalent to control terminals. The gate terminal 534 and the driver source terminal 535 are connected to the drive substrate 550 in a manner that allows electricity to flow. The drive substrate 550 is equivalent to the control connection object and the object substrate, and the peripheral end 552 is equivalent to the control peripheral end. The gate terminal 534 and the driver source terminal 535 are electrically connected to, for example, the wiring pattern of the drive substrate 550.

[0170] In the drive substrate 550, the gate terminal 534 and the driver source terminal 535 are connected to the through hole 555. The gate terminal 534 and the driver source terminal 535 are connected to the wiring pattern of the drive substrate 550 in a state where they can be electrically connected while being inserted into the through hole 555. A plurality of through holes 555 are arranged in the circumferential direction CD along the outer peripheral end 552 in the drive substrate 550. The through holes 555 are respectively included in the connection portion between the gate terminal 534 and the drive substrate 550 and the connection portion between the driver source terminal 535 and the drive substrate 550.

[0171] The high-voltage substrate 510 and the drive substrate 550 are in a state of being opposite to each other. In the high-voltage substrate 510 and the drive substrate 550, the second high-voltage surface 510b is opposite to the first control surface 550a. As a pair of plate surfaces, the high-voltage substrate 510 has a first high-voltage surface 510a and a second high-voltage surface 510b. In the high-voltage substrate 510, the first high-voltage surface 510a faces the high-voltage side, and the second high-voltage surface 510b faces the drive substrate 550 side. As a pair of plate surfaces, the drive substrate 550 has a first control surface 550a and a second control surface 550b. In the drive substrate 550, the first control surface 550a faces the high-voltage substrate 510 side, and the second control surface 550b faces the low-voltage side.

[0172] The switch body 531 is disposed at a position closer to the high voltage substrate 510 than the drive substrate 550. The separation distance between the switch body 531 and the high voltage substrate 510 is smaller than the separation distance between the switch body 531 and the drive substrate 550. The shortest distance between the switch body 531 and the high voltage substrate 510 is the separation distance, and the shortest distance between the switch body 531 and the drive substrate 550 is the separation distance.

[0173] At least a portion of the switch body 531 is disposed between the first high-pressure surface 510a and the second control surface 550b in the axial direction AD. In the switch body 531, at least the body base end portion 531c is disposed between the first high-pressure surface 510a and the second control surface 550b in the axial direction AD. The region between the first high-pressure surface 510a and the second control surface 550b in the axial direction AD is a substrate region where the high-pressure substrate 510 and the drive substrate 550 are disposed. At least the body base end portion 531c of the switch body 531 is included in the projection region where the substrate region is projected radially outward.

[0174] The switch body 531 is located at a position closer to the high-voltage side than the substrate middle line Cmid. In the switch body 531, the body base end 531c is located between the substrate middle line Cmid and the first high-voltage surface 510a in the axial direction AD. The body base end 531c is located closer to the first high-voltage surface 510a than the substrate middle line Cmid in the axial direction AD. The switch body 531 extends further to the high-voltage side than the high-voltage substrate 510 in the axial direction AD.

[0175] The substrate middle line Cmid is an imaginary line passing through the middle of the high-voltage substrate 510 and the drive substrate 550. The middle of the high-voltage substrate 510 and the drive substrate 550 is, for example, the middle of the plate surfaces of the high-voltage substrate 510 and the drive substrate 550 that are opposite to each other. The substrate middle line Cmid extends, for example, parallel to the plate surfaces of the high-voltage substrate 510 and the drive substrate 550. In the axial direction AD, the position where the substrate middle line Cmid passes is the middle position of the high-voltage substrate 510 and the drive substrate 550.

[0176] The drain terminal 532 has a drain exposure portion 532ex. The drain exposure portion 532ex is a portion of the drain terminal 532 that is connected to the switch body 531 and the high-voltage substrate 510 and is exposed. The drain exposure portion 532ex is in a state of connecting the switch body 531 and the high-voltage substrate 510, and is equivalent to a power connection portion. If the drain exposure portion 532ex is bent, the length of the drain exposure portion 532ex is greater than the separation distance between the switch body 531 and the high-voltage substrate 510.

[0177] The source terminal 533 has a source exposed portion 533ex. The source exposed portion 533ex is a portion of the source terminal 533 that is connected to the switch body 531 and the high voltage substrate 510 and is exposed. The source exposed portion 533ex is in a state of connecting the switch body 531 and the high voltage substrate 510, and is equivalent to a power connection portion. If the source exposed portion 533ex is bent, the length of the source exposed portion 533ex is greater than the separation distance between the switch body 531 and the high voltage substrate 510.

[0178] The gate terminal 534 has a gate exposed portion 534ex. The gate exposed portion 534ex is a portion of the gate terminal 534 that is connected to the switch body 531 and the drive substrate 550 and is exposed. The gate exposed portion 534ex is in a state of connecting the switch body 531 and the drive substrate 550, and is equivalent to a control connection portion. If the gate exposed portion 534ex is bent, the length of the gate exposed portion 534ex is greater than the separation distance between the switch body 531 and the drive substrate 550.

[0179] The driver source terminal 535 has a drain-source exposed portion 535ex. The drain-source exposed portion 535ex is a portion of the driver source terminal 535 that is connected to the switch body 531 and the drive substrate 550 and is exposed. The drain-source exposed portion 535ex is in a state of connecting the switch body 531 and the drive substrate 550, and is equivalent to a control connection portion. If the drain-source exposed portion 535ex is bent, the length of the drain-source exposed portion 535ex is greater than the separation distance between the switch body 531 and the drive substrate 550.

[0180] The terminals 532 to 535 include a base extension portion 536a, a front end extension portion 536b, and an extension connection portion 536c. The base extension portion 536a is a portion extending from the base end portion of the terminals 532 to 535. The base extension portion 536a extends from the main body base end portion 531c in the axial direction AD. The front end extension portion 536b is a portion extending from the front end portion of the terminals 532 to 535. The front end extension portion 536b extends from the high voltage substrate 510 or the drive substrate 550 along the base extension portion 536a and in the axial direction AD. The front end extension portion 536b is inserted into the through holes 515 and 555 and fixed to the high voltage substrate 510 or the drive substrate 550. The extension connection portion 536c is a portion of the terminals 532 to 535 that connects the base extension portion 536a and the front end extension portion 536b.

[0181] The drain terminal 532 and the source terminal 533 are bent in a U-shaped shape as a whole. The drain terminal 532 and the source terminal 533 are formed in a shape that is folded back in a manner that extends from the switch body 531 in the direction away from the high-voltage substrate 510 and extends in the direction close to the high-voltage substrate 510 in the axial direction AD. In the drain terminal 532 and the source terminal 533, the base end extension portion 536a and the front end extension portion 536b extend from the extended connection portion 536c in the same direction. The drain terminal 532 and the source terminal 533 are formed in a U-shaped turn shape that extends from the switch body 531 and turns in a U-shape and returns.

[0182] The gate terminal 534 and the driver source terminal 535 are bent in a Z-shape as a whole. The gate terminal 534 and the driver source terminal 535 include a portion extending in the radial direction RD, and extend in the axial direction AD from the switch body 531 toward the drive substrate 550 as a whole. In the gate terminal 534 and the driver source terminal 535, the base end extension portion 536a and the front end extension portion 536b extend in opposite directions from the extension connection portion 536c.

[0183] <Structure group D> The arm switch unit 530 generates heat by energizing, and is equivalent to a heat generating component. The smoothing capacitor unit 580 and the filter component 524 are generated by energizing in the same manner as the arm switch unit 530, but the heat generated by energizing is smaller than that of the arm switch unit 530. That is, the heat generated by energizing the smoothing capacitor unit 580 and the heat generated by energizing the filter component 524 are smaller than the heat generated by energizing the arm switch unit 530. The smoothing capacitor unit 580 and the filter component 524 are equivalent to small heat generating components.

[0184] In this embodiment, for the energized parts such as the arm switch unit 530 that generate heat due to power-on, the greater the heat generation and the management temperature, the greater the heat generation is. For example, in the energized parts, the greater the temperature rise rate is. In addition, in the energized parts, the higher the management temperature is, the higher the high temperature resistance is.

[0185] Since at least one of the heat generation and the management temperature of the arm switch unit 530 is greater than the smoothing capacitor unit 580 and the filter component 524, the heat generated by energization is greater than the smoothing capacitor unit 580 and the filter component 524. For example, the heat generation of the arm switch unit 530 is greater than any one of the heat generation of the smoothing capacitor unit 580 and the heat generation of the filter component 524. In addition, the management temperature of the arm switch unit 530 is higher than any one of the management temperature of the smoothing capacitor unit 580 and the management temperature of the filter component 524. In addition, the arm switch unit 530 is the component that generates the largest amount of heat due to energization among all the components constituting the inverter device 80.

[0186] The heat generated by the filter component 524 due to the energization is smaller than that of the smoothing capacitor unit 580. That is, the heat generated by the energization of the filter component 524 is smaller than that of the smoothing capacitor unit 580. The smoothing capacitor unit 580 corresponds to the first small heat component, and the filter component 524 corresponds to the second small heat component.

[0187] like Fig.26 As shown, the inverter device 80 has a capacitor column 580R, a filter column 524R, and an arm switch column 530R. These columns 580R, 524R, and 530R all extend in a ring shape in the circumferential direction CD. The arm switch column 530R is located at a position away from the capacitor column 580R in the radial direction. The filter column 524R is located at a position away from the capacitor column 580R in the radial direction. The capacitor column 580R is set between the arm switch column 530R and the filter column 524R in the radial direction RD. In addition, Fig.26 In FIG. 5 , columns 580R, 524R, and 530R are indicated by single-dot chain lines.

[0188] The arm switch column 530R has a plurality of arm switch parts 530. In the arm switch column 530R, the plurality of arm switch parts 530 are arranged in the circumferential direction CD. For example, a column of arm switch columns 530R extends in the circumferential direction CD. In a column of arm switch columns 530R, the arm switch parts 530 are arranged one by one in the circumferential direction CD over the entire circumferential direction CD. The arm switch column 530R extends along the inner circumferential surface 90b relative to the inverter outer peripheral wall 91. The arm switch column 530R includes a plurality of switch groups 530G. The arm switch column 530R is equivalent to a heat generating component column.

[0189] The arm switch array 530R is in the shape of a ring as a whole. In the arm switch array 530R, the arm switch units 530 are arranged at equal intervals and the parts that are not arranged at equal intervals are mixed. In the arm switch array 530R, the separation distance between two arm switch units 530 adjacent in the circumferential direction CD is not uniform in the circumferential direction CD. For example, the separation distance between two switch groups 530G adjacent in the circumferential direction CD is greater than the separation distance between two arm switch units 530 adjacent in the circumferential direction CD in one switch group 530G. In addition, in the arm switch array 530R, a component such as the motor current sensor 146 that is not an arm switch unit 530 may enter between two arm switch units 530 adjacent in the circumferential direction CD.

[0190] The capacitor array 580R has a plurality of smoothing capacitor units 580. In the capacitor array 580R, the plurality of smoothing capacitor units 580 are arranged in the circumferential direction CD. For example, one array of capacitor arrays 580R extends in the circumferential direction CD. In one array of capacitor arrays 580R, the smoothing capacitor units 580 are arranged one by one in the circumferential direction CD over the entire circumferential direction CD. The capacitor array 580R extends along the outer peripheral end 512 relative to the high voltage substrate 510. The capacitor array 580R includes a plurality of capacitor groups 580G. The capacitor array 580R corresponds to the small heat component array and the first component array.

[0191] The capacitor array 580R is annular in shape as a whole. In the capacitor array 580R, there are a mixture of parts where the smoothing capacitor units 580 are arranged at equal intervals and parts where they are not arranged at equal intervals. In the capacitor array 580R, the separation distance between two smoothing capacitor units 580 adjacent in the circumferential direction CD is not uniform in the circumferential direction CD. For example, the separation distance between two capacitor groups 580G adjacent in the circumferential direction CD is greater than the separation distance between two smoothing capacitor units 580 adjacent in the circumferential direction CD in one capacitor group 580G. In addition, in the capacitor array 580R, a component such as the motor current sensor 146 that is not a smoothing capacitor unit 580 may be placed between two smoothing capacitor units 580 adjacent in the circumferential direction CD.

[0192] The filter column 524R has a plurality of filter components 524. In the filter column 524R, a plurality of smoothing capacitor units 580 are arranged in the circumferential direction CD. For example, one column of the filter column 524R extends in the circumferential direction CD. In one column of the filter column 524R, in at least a portion of the circumferential direction CD, the filter components 524 are arranged one by one in the circumferential direction CD. The filter column 524R extends along the inner peripheral end 511 relative to the high voltage substrate 510. The filter column 524R is equivalent to a small heat component column and a second component column.

[0193] The filter array 524R is annular in shape as a whole. In the filter array 524R, the filter components 524 are not arranged at equal intervals in the circumferential direction CD. In the filter array 524R, the common mode coil portion 525, the normal mode coil portion 526, the Y capacitor portion 527, and the X capacitor portion 528 are arranged in a mixed manner. In addition, in the filter array 524R, a component such as the current sensor 147 that is not a filter component 524 may enter between two adjacent filter components 524 in the circumferential direction CD.

[0194] The plurality of smoothing capacitor units 580 include a group arrangement component 580c. In addition, the plurality of filter components 524 include a group arrangement component 524a. The group arrangement components 580c and 524a are arranged in a position parallel to the switch group 530G in the radial direction RD. At least a portion of the group arrangement components 580c and 524a is located in a position parallel to the switch group 530G in the radial direction RD. For example, the filter component 524 located between two switch groups 530G adjacent to each other in the circumferential direction CD among the plurality of filter components 524 is not the group arrangement component 580c. In addition, the switch group 530G is equivalent to the heating group.

[0195] The group arrangement members 580c and 524a are provided at a projection position projected onto the arm switch unit 530 in the radial direction RD. The projection position is a position where at least a portion of a projection surface of the group arrangement members 580c and 524a projected radially outward overlaps with the arm switch unit 530. The group arrangement members 580c and 524a located at the projection position and the arm switch unit 530 overlapping with the projection surface of the group arrangement members 580c and 524a are arranged in the radial direction RD.

[0196] The inverter device 80 includes a switch area Asw1 and an intermediate area Asw2. The switch area Asw1 is an area where the switch group 530G is provided, and extends along the inner peripheral surface 90b and in the circumferential direction CD. A plurality of switch areas Asw1 are arranged along the circumferential direction CD and in the circumferential direction CD. One switch area Asw1 is an area where one switch group 530G is provided. In the switch area Asw1, the plurality of arm switches 86 of the switch group 530G are arranged densely. The switch area Asw1 is equivalent to a dense area.

[0197] The middle region Asw2 is a region provided between two switch regions Asw1 adjacent to each other in the circumferential direction CD. The middle region Asw2 is provided between two switch regions Asw1 adjacent to each other in the circumferential direction CD, and extends along the inner circumferential surface 90b in the circumferential direction CD. The middle region Asw2 is a region where the switch group 530G is not provided, and is a region where the arm switch unit 530 is not provided. A plurality of middle regions Asw2 are arranged along the inner circumferential surface 90b in the circumferential direction CD. The switch regions Asw1 and the middle regions Asw2 are arranged alternately in the circumferential direction CD.

[0198] The inverter device 80 includes components and parts that are located side by side in the radial direction RD relative to the switch area Asw1. For example, the inverter fin group 93, the group arrangement components 580c, and 524a are located side by side in the radial direction RD relative to the switch area Asw1. In addition, the inverter device 80 includes components and parts that are located side by side in the radial direction RD relative to the middle area Asw2. For example, the flanges 94, 95, the inverter connector 96, and the connector arrangement component 524b are located side by side in the radial direction RD relative to the middle area Asw2.

[0199] The connector arranging component 524b is included in the plurality of filter components 524. The connector arranging component 524b is provided at a position aligned in the radial direction RD with respect to the inverter connector 96. At least a portion of the connector arranging component 524b is located at a position aligned in the radial direction RD with the inverter connector 96. For example, the group arranging component 524a of the plurality of filter components 524 is not the connector arranging component 524b.

[0200] The inverter connector 96 is a connector for connecting the arm switch 86 to the battery 31 in an energizable manner. The battery 31 corresponds to an external device, and the inverter connector 96 corresponds to an external connector.

[0201] like Fig. 27 As shown, the inverter device 80 has a switch pressing portion 539. The switch pressing portion 539 presses the arm switch portion 530 toward the inverter outer peripheral wall 91. The switch pressing portion 539 is a member capable of elastic deformation, and is formed by a force-applying member such as a leaf spring. The switch pressing portion 539 is fixed to the inverter outer peripheral wall 91 in an elastically deformed state, and the switch body 531 is pressed radially outward against the inner peripheral surface 90b by a restoring force. In the switch pressing portion 539, for example, one end is fixed to the inverter outer peripheral wall 91 by a fixing member such as a bolt, and the other end is hooked on the first plate surface 531a.

[0202] The switch body 531 is in contact with the inner circumferential surface 90b and is fixed to the inverter outer peripheral wall 91 by an adhesive or the like. The switch body 531 may be in direct contact with the inner circumferential surface 90b or indirect contact with the inner circumferential surface 90b. Regardless of whether the contact between the switch body 531 and the inner circumferential surface 90b is direct or indirect, it is sufficient as long as heat can be transferred between the switch body 531 and the inner circumferential surface 90b. For example, as a structure in which the switch body 531 is in indirect contact with the inner circumferential surface 90b, there is a structure in which the switch body 531 overlaps with the inner circumferential surface 90b via a heat conduction member. The heat conduction member is a member having thermal conductivity, such as gel, lubricating oil, adhesive, etc. In this structure, heat transfer between the switch body 531 and the inverter outer peripheral wall 91 is performed via the heat conduction member.

[0203] The switch body 531 is in contact with the inner peripheral surface 90b, and is then pressed against the inner peripheral surface 90b by the switch pressing portion 539. In the switch body 531, due to the pressing force of the switch pressing portion 539, the second plate surface 531b is easily in close contact with the inner peripheral surface 90b. Therefore, the heat of the switch body 531 is easily transferred to the switch outer peripheral wall. The second plate surface 531b can overlap with the inner peripheral surface 90b directly or indirectly. In addition, the switch body 531 is equivalent to the component body, and the terminals 532 to 535 are equivalent to the component terminals.

[0204] The high voltage substrate 510 and the drive substrate 550 are thermally conductive and can transfer heat to the arm switch unit 530 and the component support unit 500. By connecting the terminals 532 to 535 and the substrates 510 and 550, the substrates 510, 550 and the arm switch unit 530 can transfer heat. The heat transfer between the substrates 510, 550 and the component support unit 500 is carried out via the contact portion where the substrates 510, 550 and the component support unit 500 are in contact. The contact portion between the substrates 510, 550 and the component support unit 500 includes a high voltage fixing portion 507 and a drive fixing portion 508. The high voltage substrate 510 and the drive substrate 550 are equivalent to the connection substrate, and the component support unit 500 is equivalent to the substrate support unit.

[0205] The high voltage fixing portion 507 is included in the component support portion 500. The high voltage fixing portion 507 is provided on at least one of the beam portion 501 and the beam connecting portion 502. The high voltage substrate 510 is fixed to the component support portion 500 in a state of contact with the high voltage fixing portion 507. The high voltage fixing portion 507 is, for example, a convex portion protruding from the beam portion 501 toward the high voltage side. The high voltage fixing portion 507 is provided with a screw hole 505. The drain terminal 532 and the source terminal 533 can transfer heat to the inverter outer peripheral wall 91 via the high voltage substrate 510 and the component support portion 500.

[0206] The drive fixing portion 508 is included in the component support portion 500. The drive fixing portion 508 is provided on at least one of the beam portion 501 and the beam connecting portion 502. The drive substrate 550 is fixed to the component support portion 500 in a state of contact with the drive fixing portion 508. The drive fixing portion 508 is, for example, a convex portion protruding from the beam portion 501 toward the low voltage side. The drive fixing portion 508 is provided with a screw hole 506. The gate terminal 534 and the driver source terminal 535 can transfer heat to the inverter outer peripheral wall 91 via the drive substrate 550 and the component support portion 500.

[0207] like Fig. 27 , Fig.28 As shown, the heat dissipation path for releasing the heat of the arm switch unit 530 to the outside of the inverter device 80 includes heat dissipation paths PH1 to PH3. The first heat dissipation path PH1 is a path for releasing the heat of the switch body 531 from the inverter outer peripheral wall 91 to the outside. In the first heat dissipation path PH1, the heat of the switch body 531 is directly transferred to the inner peripheral surface 90b, and the heat is released to the outside from the outer peripheral surface 90a via the inverter fins 92 and the like. The outer peripheral surface 90a is equivalent to a heat dissipation surface that releases the heat transferred to the inner peripheral surface 90b to the outside. The heat transferred through the first heat dissipation path PH1 is easily released from the portion of the outer peripheral surface 90a that is parallel to the switch area Asw1 in the radial direction RD. In addition, the outer peripheral surface 90a is sometimes referred to as a heat dissipation end. In particular, the portion of the outer peripheral surface 90a that is parallel to the switch area Asw1 in the radial direction RD is sometimes referred to as the first heat dissipation end.

[0208] In the arm switch array 530R, heat is dissipated from the plurality of arm switch units 530 through the first heat dissipation path PH1. Fig.28 As shown in the figure, the heat of the plurality of arm switch parts 530 is released radially from the outer peripheral surface 90a to the radially outer side. In this way, the first heat dissipation paths PH1 corresponding to the plurality of arm switch parts 530 are not easy to overlap with each other. That is, the heat of the plurality of arm switch parts 530 is easily released to the outside through different paths.

[0209] The second heat dissipation path PH2 is a path for releasing the heat of the drain terminal 532 and the source terminal 533 from the inverter peripheral wall 91 to the outside via the high-voltage substrate 510 and the component support portion 500. In the second heat dissipation path PH2, the heat of the drain terminal 532 and the source terminal 533 is transferred to the high-voltage substrate 510, and the heat is transferred to the inverter peripheral wall 91 via the component support portion 500 and released from the outer peripheral surface 90a to the outside. The heat transferred through the second heat dissipation path PH2 is easily released from the portion of the outer peripheral surface 90a that is parallel to the middle area Asw2 in the radial direction RD. In addition, the portion of the outer peripheral surface 90a that is parallel to the middle area Asw2 in the radial direction RD is sometimes referred to as the second heat dissipation end.

[0210] The third heat dissipation path PH3 is a path for releasing the heat of the gate terminal 534 and the driver source terminal 535 from the inverter peripheral wall 91 to the outside via the drive substrate 550 and the component support portion 500. In the third heat dissipation path PH3, the heat of the gate terminal 534 and the driver source terminal 535 is transferred to the drive substrate 550, and the heat is transferred to the inverter peripheral wall 91 via the component support portion 500 and released from the outer peripheral surface 90a to the outside. The heat transferred through the third heat dissipation path PH3 is easily released from the portion of the outer peripheral surface 90a that is parallel to the middle area Asw2 in the radial direction RD.

[0211] <Structure Group A> According to the present embodiment described so far, the installation components of the inverter device 80 are fixed to the beam portion 501 via the plate members such as the high-voltage substrate 510 and the drive substrate 550. In this structure, the multiple beam portions 501, the high-voltage substrate 510 and the drive substrate 550 mutually restrict the stress applied to the XYZ direction. That is, the structure in which the installation components are clamped and fixed by the plate members provided on the multiple lightweight beam portions 501 is a lightweight and vibration-resistant high-strength shape. In this way, even if the vibration is transmitted from the inverter outer peripheral wall 91 to the beam portion 501, it is possible to suppress the installation components from vibrating significantly, and the vibration resistance of the inverter device 80 can be improved.

[0212] In the EPU 50, the inverter outer peripheral wall 91 is fixed to the motor outer peripheral wall 71 of the motor device 60, which has relatively small vibration, by means of the high-voltage side flange 94 or the like. That is, the inverter device 80 is coupled to the motor outer peripheral wall 71, which holds the stator 200 and has relatively small vibration, rather than to the rear end plate 62, which has relatively large vibration due to supporting the rotor 300 of the motor device 60. Therefore, the influence of vibration on the inverter device 80 can be reduced. Moreover, since the mounting components of the inverter device 80 are fixed to the beam portion 501 via the plate members such as the high-voltage substrate 510 and the drive substrate 550, the vibration resistance of the inverter device 80 can be improved as described above. In addition, if the cooling of the rear end plate 62 of the motor device 60 is insufficient, the rear end plate 62 will become high temperature, but since an air layer is interposed between the rear end plate 62 and the mounting components of the inverter device 80, thermal damage to the mounting components can also be prevented.

[0213] According to the present embodiment, in the axial direction AD, a high voltage substrate 510 is provided on one side of the beam 501, and a drive substrate 550 is provided on the side opposite to the high voltage substrate 510 across the beam 501. In this structure, the two plate members, the high voltage substrate 510 and the drive substrate 550, restrict the vibration of the plurality of beams 501 individually from one side and the other side of the axial direction AD, respectively. Therefore, a structure in which the beam 501 is not easily vibrated can be realized by the high voltage substrate 510 and the drive substrate 550.

[0214] In addition, in the inverter device 80, a sandwich structure is formed by the plurality of beams 501, the high voltage substrate 510, and the drive substrate 550. In this way, since the support structure supporting the mounting component is a sandwich structure, the strength of the support structure can be increased. Therefore, the effect of suppressing the vibration of the mounting component can be improved by the sandwich structure. Moreover, the support structure can be made lighter by the sandwich structure.

[0215] According to the present embodiment, the plate members for limiting the vibration of the beam portion 501 are the high voltage substrate 510 and the drive substrate 550. In this structure, there is no need to use a dedicated plate member to limit the vibration of the beam portion 501. For example, unlike the present embodiment, in a structure in which a dedicated plate member is erected and fixed to a plurality of beam portions 501, the electrical wiring and wiring operations for energizing the mounted components may become complicated. In contrast, in the present embodiment, the high voltage substrate 510 and the drive substrate 550 can achieve both simplification of the electrical wiring and limiting the vibration of the beam portion 501. In addition, by using multi-layer wiring on the high voltage substrate 510 and the drive substrate 550, the electrical characteristics of the inverter device 80 can be improved.

[0216] In the present embodiment, the beam 501 located between the high-voltage substrate 510 and the drive substrate 550 is grounded to the grounding member. In this structure, the electromagnetic field generated by the energization of high-voltage components such as the high-voltage substrate 510 is suppressed from being applied to low-voltage components such as the drive substrate 550 by the beam 501. In this way, since the influence of the electromagnetic field caused by the high-voltage components is reduced by the beam 501, a noise-resistant inverter device 80 can be realized. In addition, the grounding path grounded to the grounding member is formed by including the beam 501. Therefore, it is not necessary to use a dedicated grounding wire for grounding high-voltage components and low-voltage components to the grounding member. Therefore, by configuring the grounding member on the surface or inner layer of the high-voltage substrate 510 and the drive substrate 550, the grounding member is energized to the plurality of beams 501, and it is easy to ground the noise from the high-voltage components and low-voltage components to the grounding member with low impedance.

[0217] According to the present embodiment, a plurality of arm switch parts 530 are fixed to the inner peripheral surface 90b in the inverter peripheral wall 91, and a plurality of arm switch parts 530 are arranged along the inner peripheral surface 90b and in the circumferential direction CD. In this structure, when the arm switch part 530 generates heat as the inverter device 80 is driven, the heat is easily released to the outside through the inverter peripheral wall 91. Therefore, it is possible to suppress the temperature of the arm switch part 530 from becoming too high and the heat of the arm switch part 530 from being retained inside the inverter housing 90. Therefore, for the installed parts in the energized parts, the vibration can be preferentially reduced, and for the arm switch part 530 in the energized parts, the heat can be preferentially dissipated. As a result, it is possible to achieve both improving the vibration resistance of the inverter device 80 and improving the heat dissipation of the inverter device 80.

[0218] Moreover, the plurality of arm switch parts 530 are arranged along the outer peripheral end 512 relative to the high voltage substrate 510 and the control substrate 560. In this structure, the separation distance between the arm switch parts 530 and the high voltage substrate 510 and the control substrate 560 in the radial direction RD can be made uniform among the plurality of arm switch parts 530. Therefore, it is possible to suppress the length of the terminals 532 to 535 extending from the arm switch parts 530 toward the substrates 510 and 550 from being excessively deviated among the plurality of arm switch parts 530. Moreover, by connecting the plurality of arm switch parts 530 in parallel, it is possible to achieve a reduction in inductance and a reduction in thermal resistance by heat source dispersion. In addition, connecting the arm switch parts 530 in parallel can reduce the effect of the heat sink in the inverter peripheral wall 91 located between the arm switch parts 530 and the inverter fins 92, thereby improving the cooling effect and making the inverter peripheral wall 91 thin and lightweight.

[0219] According to the present embodiment, the beam 501 extends radially inward from the inverter outer peripheral wall 91 between two switch groups 530G adjacent to each other in the circumferential direction CD. In this structure, the beam 501 can be arranged at a position that does not interfere with the arm switch unit 530.

[0220] According to this embodiment, the switch body 531 included in the arm switch unit 530 is disposed at a position away from the beam portion 501, the high-voltage substrate 510, and the drive substrate 550. In this structure, the heat generated by the switch body 531 is not transmitted through the beam portion 501, the high-voltage substrate 510, and the drive substrate 550, and is easily directly transmitted to the outer peripheral wall 91 of the inverter. Therefore, it is possible to suppress an increase in the temperature of the beam portion 501, the high-voltage substrate 510, and the drive substrate 550 due to the heat of the switch body 531.

[0221] According to this embodiment, the arm switch unit 530 is disposed at a position side by side with the inverter fin 92 in the radial direction RD. In this structure, the inverter fin 92 exists at the position closest to the arm switch unit 530 in the outer peripheral surface 90a of the outer peripheral wall 91 of the inverter. Therefore, it is possible to dispose the inverter fin 92 at the position where the heat dissipation effect of the arm switch unit 530 is the highest.

[0222] According to this embodiment, the plurality of beam portions 501 are connected by the beam connection portion 502. In this structure, the beam connection portion 502 restricts the individual vibration of the plurality of beam portions 501. Therefore, the strength of the structure composed of the high-voltage substrate 510, the drive substrate 550, and the plurality of beam portions 501 is increased, and the vibration transmitted to the mounting component can be reduced.

[0223] According to this embodiment, the inside of the beam connection portion 502 opens the high-voltage substrate 510 and the drive substrate 550 in a doughnut shape. The weight near the center becomes lighter. Therefore, the resonance frequencies of the beam portion 501 and the beam connection portion 502 become higher, and a structure in which the beam portion 501 and the beam connection portion 502 are not easily resonated with the vibration from the motor device 60 or the like can be realized. Therefore, the strength of the inverter housing 90 against vibration can be improved.

[0224] According to this embodiment, the beam portion 501 and the outer peripheral wall 91 of the inverter can conduct heat. Therefore, even if heat is generated in the energized components such as the smoothing capacitor portion 580 and the high-voltage substrate 510, the heat is easily released to the outside from the beam portion 501 via the outer peripheral wall 91 of the inverter. Since the connection portion between the beam portion 501 and the outer peripheral wall 91 avoids the installation of the arm switch unit 530, the temperature is lower than that of the arm switch unit 530, and good heat dissipation can be achieved.

[0225] According to the present embodiment, the beam 501 is connected to the inverter peripheral wall 91. Therefore, the filter component 524 and the high-voltage substrate 510 can be grounded to the grounding member via the conductive path including the beam 501 and the inverter peripheral wall 91. Therefore, in the inverter device 80, the EMC performance can be improved by the beam 501. In addition, the structure of grounding the filter component 524 and the high-voltage substrate 510 to the grounding member can be simplified, and it is also easy to configure electrical safety components such as the varistor 155.

[0226] According to the present embodiment, the heat insulating portion 545 is provided between the high voltage substrate 510 and the rear end plate 62, and extends along the rear end plate 62. In this structure, the heat insulating portion 545 is provided between the mounting components of the inverter device 80 having a relatively low heat resistance temperature and the rear end plate 62. Therefore, in the motor device 60, even if the rear end plate 62 reaches a high temperature due to the heat of the stator 200 and the like, heat damage in the inverter device 80 can be prevented.

[0227] <Structure Group B> According to the present embodiment, in the output bus 603, the upper arm switch unit 530A and the lower arm switch unit 530B are connected to positions separated in the circumferential direction CD. In this structure, the separation distance between the upper arm switch unit 530A and the lower arm switch unit 530B can be changed. Therefore, compared with a structure in which, for example, the upper arm switch unit 530A and the lower arm switch unit 530B are integrated, the degree of freedom related to the configuration of the arm switch units 530A and 530B can be increased.

[0228] Moreover, in the overlapping area AO, the P current IpA, IpB flowing in the P bus 601 and the N current InA, InB flowing in the N bus 602 flow in the opposite direction to the output current IoA, IoB flowing in the output bus 603 in the circumferential direction CD. In this structure, the magnetic field generated by the P current IpA, IpB and the magnetic field generated by the N current InA, InB and the magnetic field generated by the output current IoA, IoB are easily offset. Therefore, it is easy to reduce the inductance L601 to L603 parasitic on the bus 601 to 603. Therefore, it is possible to suppress the reduction in the operation accuracy of the upper arm switch unit 530A and the lower arm switch unit 530B.

[0229] This makes it possible to simultaneously achieve an increase in the degree of freedom associated with the arrangement of the arm switch units 530A and 530B and an increase in the operating accuracy of the inverter device 80 .

[0230] According to the present embodiment, the plurality of upper arm switch units 530A included in one phase are connected in parallel to each other in the P bus 601 and the output bus 603. In addition, the plurality of lower arm switch units 530B included in one phase are connected in parallel to each other in the N bus 602 and the output bus 603. In this structure, it is easy to arrange the plurality of upper arm switch units 530A and the plurality of lower arm switch units 530B along the busbars 601 to 603 and in the circumferential direction CD.

[0231] The upper arm switch unit 530A and the lower arm switch unit 530B have a driver source terminal 535 different from the source terminal 533. If a plurality of arm switch units 530A and 530B having the driver source terminal 535 are connected in parallel, current imbalance may occur due to the inductance L601 to L603 parasitic on the bus bars 601 to 603. In contrast, according to the present embodiment, the flow of currents IpA, IpB, InA, InB, IoA, and IoB in the bus bars 601 to 603 is set in such a manner as to reduce the inductance L601 to L603. Therefore, the current imbalance can be suppressed by reducing the inductance L601 to L603. Therefore, the deviation of the degree of degradation in the plurality of arm switch units 530A and 530B connected in parallel can be suppressed.

[0232] In this embodiment, a plurality of upper arm switch parts 530A included in one phase and a plurality of lower arm switch parts 530B included in one phase are arranged along busbars 601 to 603 in the circumferential direction CD. In this structure, busbars 601 to 603 are easily extended in a long strip shape in the circumferential direction CD in accordance with the range in which the plurality of arm switch parts 530A and 530B are arranged. In this way, if busbars 601 to 603 are lengthened, the inductance L601 to L603 parasitic on busbars 601 to 603 may be increased.

[0233] In contrast, in the present embodiment, the currents IpA, IpB, InA, InB, IoA, and IoB are set so as to reduce the inductances L601 to L603. Therefore, even if the busbars 601 to 603 extend in a long strip shape in the circumferential direction CD, the inductances L601 to L603 parasitic on the busbars 601 to 603 can be reduced.

[0234] According to the present embodiment, a plurality of arm switch parts 530A, 530B included in one phase are arranged along the inner peripheral surface 90b and in the circumferential direction CD. In this structure, the heat of each of the plurality of arm switch parts 530A, 530B is easily transferred to the inverter outer peripheral wall 91. Therefore, it is possible to suppress the temperature of the arm switch parts 530A, 530B from becoming too high and the heat of one arm switch part 530A, 530B from being applied to other arm switch parts 530A, 530B, etc. Therefore, the heat dissipation effect of the inverter device 80 can be improved by the configuration of the arm switch parts 530A, 530B. As a result, in the inverter device 80, both the reduction of parasitic inductance and the improvement of heat dissipation effect can be achieved.

[0235] Moreover, since the busbars 601 to 603 extend along the inner circumferential surface 90b and in the circumferential direction CD, the plurality of arm switch units 530A and 530B are arranged along the busbars 601 to 603 and in the circumferential direction CD. In this structure, the current path connecting the upper arm switch unit 530A with the P busbar 601 and the output busbar 603 can be made as short as possible in the radial direction RD. In this way, by shortening the current path connected to the upper arm switch unit 530A, the parasitic inductance generated in the current path can be reduced as much as possible. Similarly, the current path connecting the lower arm switch unit 530B with the N busbar 602 and the output busbar 603 can be made as short as possible in the radial direction RD. In this way, by shortening the current path connected to the lower arm switch unit 530B, the parasitic inductance generated in the current path can be reduced as much as possible.

[0236] According to the present embodiment, the arm switch parts 530A and 530B are arranged on the inner peripheral surface 90b at a position away from the busbars 601 to 603 in the radial direction. In this structure, the heat of the arm switch parts 530A and 530B is directly transferred to the inner peripheral surface 90b. Therefore, the heat dissipation effect of the arm switch parts 530A and 530B can be improved by the inverter peripheral wall 91. Therefore, in the inverter device 80, it is possible to simultaneously achieve the improvement of electrical characteristics such as reducing parasitic inductance and the improvement of heat dissipation.

[0237] According to the present embodiment, in one of the upper capacitor section 580A and the lower capacitor section 580B, the P capacitor terminal 582 is located radially outward from the N capacitor terminal 583, and in the other, the N capacitor terminal 583 is located radially outward from the P capacitor terminal 582. In this structure, the distance that one of the upper P current IpA and the lower P current IpB in the P bus bar 601 flows in the radial direction RD is shorter than the distance that the other flows in the radial direction RD. Similarly, the distance that one of the upper N current InA and the lower N current InB in the N bus bar 602 flows in the radial direction RD is shorter than the distance that the other flows in the radial direction RD. Therefore, it is possible to suppress the difference between the sum of the distances that the P currents IpA and IpB flow in the radial direction RD in the P bus bar 601 and the sum of the distances that the N currents InA and InB flow in the radial direction RD in the N bus bar 602 from becoming excessively large.

[0238] In this way, if the total distance in the P bus 601 and the total distance in the N bus 602 are equalized, the inductance L601 parasitic on the P bus 601 and the inductance L602 parasitic on the N bus 602 are easily equalized. Therefore, it is possible to suppress the P current IpA, IpB from flowing out of the P bus 601 and the N current InA, InB from flowing out of the N bus 602. For example, it is possible to suppress the P current IpA, IpB and the N current InA, InB flowing in the P bus 601 and the N bus 602 from flowing out as normal mode current to the ground bus 604 and becoming a common mode current. That is, it is possible to suppress the mode conversion of the current from occurring in the buses 601 to 604.

[0239] For example, unlike the present embodiment, it is assumed that the positional relationship between the P capacitor terminal 582 and the N capacitor terminal 583 is the same in the upper capacitor section 580A and the lower capacitor section 580B. In this structure, the distance that the upper P current IpA flows in the circumferential direction CD and the distance that the lower P current IpB flows in the circumferential direction CD are longer or shorter than the distance that the upper N current InA flows in the circumferential direction CD and the distance that the lower N current InB flows in the circumferential direction CD. Therefore, the difference between the total distance in the P bus 601 and the total distance in the N bus 602 is likely to become large. As a result, the difference between the inductance L601 parasitic on the P bus 601 and the inductance L602 parasitic on the N bus 602 becomes large, and thus, there is a possibility that the current mode conversion occurs.

[0240] According to the present embodiment, the overlapping area AO is provided between the farthest upper part 530Af included in the upper switch group 530GA and the farthest lower part 530Bf included in the lower switch group 530GB and extends in the circumferential direction CD. In this structure, the overlapping area AO can be extended as much as possible in the circumferential direction CD. Therefore, the range in which the P currents IpA, IpB and the N currents InA, InB flow in a manner overlapping the output currents IoA, IoB is easily expanded in the circumferential direction CD. That is, the range in which the magnetic flux generated by the P currents IpA, IpB and the magnetic flux generated by the N currents InA, InB cancel the magnetic flux generated by the output currents IoA, IoB is easily expanded in the circumferential direction CD. Therefore, the range in which the parasitic inductance is reduced by the cancellation of the magnetic flux can be expanded in the circumferential direction CD, and as a result, the parasitic inductance can be reduced as a whole of the busbars 601 to 603.

[0241] According to the present embodiment, the plurality of upper capacitor units 580A and the plurality of lower capacitor units 580B are arranged in the circumferential direction CD. In this structure, the heat generated from the plurality of upper capacitor units 580A is easily dispersed. Therefore, the heat dissipation effect of the inverter device 80 can be improved by configuring the capacitor units 580A and 580B.

[0242] Moreover, the overlapping area AO is provided between the upper capacitor group 580GA and the lower capacitor group 580GB and extends in the circumferential direction CD. Therefore, the range in which the P current IpA, IpB flowing from the capacitor groups 580GA, 580GB to the upper switch group 530GA in the P bus 601 and the output currents IoA, IoB flowing in the output bus 603 overlap can be expanded as much as possible in the circumferential direction CD. Similarly, the range in which the N currents InA, InB flowing from the lower switch group 530GB to the capacitor groups 580GA, 580GB in the N bus 602 and the output currents IoA, IoB flowing in the output bus 603 overlap can be expanded as much as possible in the circumferential direction CD. Therefore, in the bus 601 to 603, the range in which the parasitic inductance can be reduced by the flow of the currents IpA, IpB, InA, InB, IoA, IoB can be expanded as much as possible.

[0243] According to this embodiment, the busbars 601 to 603 are overlapped so that their respective plate surfaces face each other. In this structure, the busbars 601 to 603 can be arranged at positions as close as possible. Therefore, a structure can be realized in which the magnetic field generated by the P currents IpA and IpB and the N currents InA and InB and the magnetic field generated by the output currents IoA and IoB are easily offset.

[0244] According to the present embodiment, the output bus 603 is arranged between the P bus 601 and the N bus 602. In this structure, in the output bus 603, the P bus 601 and the N bus 602 can suppress the generation of electrostatic induction and the release of radiation noise due to the potential change accompanying the power conversion. Moreover, in the P bus 601 and the N bus 602, since the potential change is relatively small, it is not easy to release the radiation noise caused by electrostatic induction. Therefore, it is effective to use the P bus 601 and the N bus 602 that are not easy to release radiation noise to shield the release noise of the output bus 603. As described above, by configuring the bus 601 to 603, the EMC performance of the inverter device 80 can be improved.

[0245] According to the present embodiment, the ground busbar 604 is provided at the outermost position among the busbars 601 to 604. Therefore, the ground busbar 604 can suppress the radiation noise caused by electrostatic induction or the like from being released from the P busbar 601, the N busbar 602, and the output busbar 603.

[0246] In addition, the ground bus 604 overlaps with the P bus 601, the N bus 602, and the output bus 603. In this structure, the components connected to the P bus 601, the N bus 602, and the output bus 603 can be arranged at a position close to the ground bus 604. Therefore, the connection path between the component and the ground bus 604 can be shortened. For example, the Y capacitor unit 527 can be connected to the ground bus 604 in a manner that reduces ESL. ESL is equivalent series inductance.

[0247] In addition, since the grounding busbar 604 extends along the board surface of the high-voltage substrate 510, the Y capacitor unit 527 can be connected to the grounding busbar 604 at any position of the high-voltage substrate 510. Therefore, the degree of freedom associated with the setting position of the Y capacitor unit 527 can be improved. In addition, the grounding busbar 604 is connected to the component support unit 500 via a plurality of fixings for fixing the high-voltage substrate 510 to the component support unit 500. Therefore, the parasitic impedance of the grounding path including the grounding busbar 604 can be reduced. Therefore, it is possible to achieve both good EMC performance through the grounding busbar 604 and improved protection effect of protecting the inverter device 80 from surges through the grounding busbar 604.

[0248] According to the present embodiment, a plurality of P busbars 601, a plurality of N busbars 602, and a plurality of output busbars 603 are provided. Therefore, since the magnetic fields generated by the currents IpA, IpB, InA, InB, IoA, and IoB are generated in the plurality of busbars 601 to 603, respectively, a structure in which these magnetic fields are easily offset can be realized.

[0249] In addition, the P busbar 601 and the N busbar 602 extend in a ring shape in the circumferential direction CD. In this structure, the P busbar 601 and the N busbar 602 extend along the outer peripheral end 512 in the high-voltage substrate 510, and a closed circuit can be formed by the P line 141 and the N line 142. In this way, when the P line 141 and the N line 142 form a closed circuit, the parasitic inductance generated between the upper arm 84 and the lower arm 85 is easily reduced. Therefore, the loss generated in the P line 141 and the N line 142 can be reduced.

[0250] According to the present embodiment, the output currents IoA and IoB flowing in the overlap area AO are currents flowing between the upper arm switch section 530A and the lower arm switch section 530B forming one upper and lower arm circuit 83. Therefore, the parasitic inductance generated with respect to one upper and lower arm circuit 83 can be reduced by the flow of the currents IpA, IpB, InA, InB, IoA, and IoB.

[0251] According to the present embodiment, in the output bus 603, the upper source terminal 533A and the lower drain terminal 532B are connected at positions separated in the circumferential direction CD. In this structure, the separation distance between the upper source terminal 533A and the lower drain terminal 532B can be changed. Therefore, the degree of freedom related to the configuration of the upper arm switch unit 530A having the upper source terminal 533A and the lower arm switch unit 530B having the lower drain terminal 532B can be improved.

[0252] Moreover, at least one of the upper drain terminal 532A and the P capacitor terminal 582 and at least one of the lower source terminal 533B and the low capacitor terminal are provided between the upper source terminal 533A and the lower drain terminal 532B in the circumferential direction CD. In this structure, the P currents IpA and IpB flow in the opposite direction to the output currents IoA and IoB between the upper source terminal 533A and the lower drain terminal 532B in the circumferential direction CD. In addition, the N currents InA and InB flow in the opposite direction to the output currents IoA and IoB between the upper source terminal 533A and the lower drain terminal 532B in the circumferential direction CD. Therefore, by canceling the magnetic field generated by the output currents IoA and IoB and the magnetic field generated by the P currents IpA and IpB and the N currents InA and InB, the inductances L601 to L603 parasitic on the busbars 601 to 603 can be reduced.

[0253] <Structure Group C> According to the present embodiment, a plurality of arm switch parts 530 are arranged along the outer peripheral ends 512, 552 and in the circumferential direction CD relative to the high-voltage substrate 510 and the drive substrate 550. In this structure, the positions of the plurality of arm switch parts 530 are aligned in the axial direction AD and the radial direction RD. Therefore, it is not easy for the positional relationship between the arm switch part 530 and the high-voltage substrate 510 and the drive substrate 550 to deviate among the plurality of arm switch parts 530. For example, the separation distance between the switch body 531 and the high-voltage substrate 510 in the radial direction RD is easy to be the same for each of the plurality of arm switch parts 530. Similarly, the separation distance between the switch body 531 and the drive substrate 550 in the radial direction RD is easy to be the same for each of the plurality of arm switch parts 530.

[0254] Therefore, it is unlikely that the parasitic inductance generated in the current path including the terminals 532 to 533 will vary among the plurality of arm switch units 530, or that the switching accuracy will vary among the plurality of arm switch units 530. For example, it is unlikely that the switching timing of the arm switch 86 opening and closing will vary among the upper arm 84 and the lower arm 85, or among the plurality of upper and lower arm circuits 83. In this way, it is possible to suppress a decrease in the operating accuracy of the arm switch 86, and thus it is possible to improve the operating accuracy of the inverter device 80.

[0255] As described above, the positions of the plurality of arm switch parts 530 are aligned in the axial direction AD and the radial direction RD. Therefore, the separation distance between the switch body 531 and the substrates 510 and 550 is easily uniformed in the plurality of arm switch parts 530. Therefore, it is possible to suppress the separation distance between the switch body 531 and the substrates 510 and 550 from being too large. In other words, the wiring length between the switch body 531 and the substrates 510 and 550 can be reduced. The wiring length is, for example, the length of the exposed portions 532ex to 535ex. When the wiring length is reduced, the parasitic inductance generated in the wiring is reduced. In the wiring, by reducing the parasitic inductance, the surge voltage can be reduced. Moreover, due to the amount of the surge voltage drop, the switching speed of the arm switch 86 can be correspondingly accelerated, and therefore, the loss can be reduced.

[0256] In the inverter device 80 in which a plurality of arm switches 86 are connected in parallel, the gate voltage Vg sometimes oscillates. When the balance of the current flowing through the arm switch 86 is destroyed in the plurality of arm switches 86 connected in parallel, the gate voltage Vg tends to oscillate. In addition, the faster the switching speed of the arm switch 86, the more likely the oscillation of the gate voltage Vg becomes larger. In contrast, the smaller the parasitic inductance of the wiring, the less likely the gate voltage Vg is to oscillate, and therefore, the switching speed of the arm switch 86 can be increased. Therefore, by reducing the parasitic inductance generated in the wiring, the switching speed of the arm switch 86 can be increased and the loss can be reduced.

[0257] In the inverter device 80, the higher the applied voltage from the battery 31, the more likely it is to generate loss due to parasitic inductance. In addition, the faster the switching speed of the arm switch 86 is, the more likely it is to generate loss due to parasitic inductance. Therefore, even if at least one of the high voltage and high-speed switching of the inverter device 80 is performed, the loss due to parasitic inductance can be reduced by arranging the plurality of arm switch units 530 along the outer peripheral ends 512 and 552 in the circumferential direction CD.

[0258] According to the present embodiment, the switch body 531 is provided at a position closer to the high voltage substrate 510 than the drive substrate 550. Therefore, it is easy to realize a structure in which the drain terminal 532 and the source terminal 533 are shorter than the gate terminal 534 and the driver source terminal 535. In this way, by shortening the power terminals such as the drain terminal 532 and the source terminal 533, the parasitic inductance generated by the power terminals can be reduced. Therefore, the loss generated by the power terminals can be reduced.

[0259] According to the present embodiment, the drain exposed portion 532ex and the source exposed portion 533ex are shorter than the gate exposed portion 534ex and the driver source terminal 535. Therefore, the parasitic inductance generated by the power connection portion such as the drain exposed portion 532ex and the source exposed portion 533ex can be reduced. In this way, the parasitic inductance of the wiring is reduced by shortening the size of the power connection portion, thereby increasing the switching speed of the arm switch 86 and reducing the loss.

[0260] According to the present embodiment, the drain terminal 532 and the source terminal 533 are folded back. In this structure, the magnetic fields generated by the energization at the two locations that fold back to each other in the drain terminal 532 and the source terminal 533 are in a state where they cancel each other out. Therefore, the parasitic inductance generated in the drain terminal 532 and the source terminal 533 can be reduced. For example, in the drain terminal 532 and the source terminal 533, the direction of the current flowing through the base extension 536a is opposite to the direction of the current flowing through the front extension 536b. Therefore, the magnetic flux generated by the current flowing through the base extension 536a and the magnetic flux generated by the current flowing through the front extension 536b are in a state where they cancel each other out. Therefore, the parasitic inductance generated in the base extension 536a and the front extension 536b can be reduced.

[0261] According to the present embodiment, since the connection object of the terminals 532 to 535 is the substrates 510 and 550, it is possible to simplify the connection structure between the terminals 532 to 535 and the substrates 510 and 550. In addition, since the substrates 510 and 550 are plate-shaped, it is possible to easily realize a structure in which a plurality of arm switch units 530 are arranged in the circumferential direction CD along the outer peripheral ends 512 and 552.

[0262] According to the present embodiment, the drain terminal 532 and the source terminal 533 are arranged at a position away from the substrate middle line Cmid toward the high voltage substrate 510. In this structure, the drain terminal 532 and the source terminal 533 can be as far away from the drive substrate 550 as possible. Therefore, it is possible to suppress the generation of noise in the drive substrate 550 due to the current flowing through the drain terminal 532 and the source terminal 533. Therefore, the operation accuracy of the drive substrate 550 can be improved.

[0263] According to the present embodiment, the high voltage substrate 510 has power buses such as the P bus 601, the N bus 602, and the output bus 603. Therefore, a structure in which power terminals such as the drain terminal 532 and the source terminal 533 are connected to the power bus in an energized manner can be realized by simply connecting the power terminals to the high voltage substrate 510. Therefore, the structure in which the power terminals are connected to the power bus can be simplified.

[0264] According to the present embodiment, the outer peripheral ends 512, 552 and the arm switch array 530R extend in a ring shape in the circumferential direction CD. Therefore, at any position in the circumferential direction CD, the terminals 532 to 535 can be connected to the high-voltage substrate 510 and the drive substrate 550 by extending from the arm switch portion 530 in the radial direction RD. Therefore, the deviation of the length dimensions of the terminals 532 to 535 can be suppressed in the entire circumferential direction CD.

[0265] Furthermore, since the arm switch array 530R extends in a ring shape in the circumferential direction CD, in the arm switch array 530R, the heat of the plurality of arm switch units 530 can be released radially outward over the entire circumferential direction CD. Therefore, it is possible to suppress the heat generated from the arm switch units 530 from accumulating in a portion of the inverter outer peripheral wall 91 and a portion of the interior of the inverter housing 90.

[0266] According to the present embodiment, the switch body 531 is provided on the inner circumferential surface 90b. In this structure, it is not necessary to install the switch body 531 on the high-voltage substrate 510 and the drive substrate 550. Therefore, since the switch body 531 is not installed, the high-voltage substrate 510 and the drive substrate 550 can be miniaturized accordingly. That is, in the high-voltage substrate 510 and the drive substrate 550, the substrate area can be reduced. In this way, by miniaturizing the high-voltage substrate 510 and the drive substrate 550 in the radial direction RD, the inner diameter of the inverter housing 90 can be shortened. That is, the inverter housing 90 and the inverter device 80 can be miniaturized.

[0267] In addition, since the switch body 531 is provided on the inner peripheral surface 90 b , the heat of the switch body 531 is easily transferred to the inner peripheral surface 90 b . Therefore, the heat dissipation effect of the switch body 531 can be improved by the inverter outer peripheral wall 91 .

[0268] According to the present embodiment, in the switch body 531, the heat dissipation from the second plate surface 531b is greater than the heat dissipation from the first plate surface 531a. In this structure, since the heat released from the first plate surface 531a toward the radial inner side is reduced, it is not easy to accumulate heat inside the inverter housing 90. Moreover, the heat released from the second plate surface 531b toward the radial outer side tends to increase. Therefore, the heat released from the switch body 531 to the outside via the inverter peripheral wall 91 tends to increase. Therefore, the heat dissipation effect of the inverter device 80 can be improved by the second plate surface 531b.

[0269] <Structure group D> According to the present embodiment, a plurality of arm switch parts 530 are arranged in the circumferential direction CD relative to the inverter peripheral wall 91, and are in contact with the inner peripheral surface 90b. In this structure, in each of the plurality of arm switch parts 530, the heat generated is easily transferred directly from the switch body 531 to the inner peripheral surface 90b. Moreover, since the inverter peripheral wall 91 is the outer peripheral surface 90a, the heat transferred from the arm switch part 530 to the inverter peripheral wall 91 is easily released from the outer peripheral surface 90a to the outside. Therefore, it is possible to prevent the temperature of the arm switch part 530 from becoming too high, the heat generated from one arm switch part 530 from being applied to other arm switch parts 530, etc. Therefore, the heat dissipation effect of the inverter device 80 can be improved. As a result, for example, it is possible to prevent the temperature of the inverter device 80 from excessively rising and causing abnormalities.

[0270] According to the present embodiment, the smoothing capacitor unit 580 and the filter component 524, which generate less heat than the arm switch unit 530 due to power-on, are arranged at a position radially inward of the arm switch unit 530. In this structure, it is possible to avoid the heat transferred from the arm switch unit 530 toward the radial outside from being applied to the smoothing capacitor unit 580 and the filter component 524. In this case, it is not easy for the temperature of the smoothing capacitor unit 580 and the filter component 524 to rise due to the heat of the arm switch unit 530. In addition, in this case, it is not easy for the smoothing capacitor unit 580 and the filter component 524 to prevent the heat of the arm switch unit 530 from reaching the inverter outer peripheral wall 91. Therefore, the heat dissipation effects of the arm switch unit 530, the smoothing capacitor unit 580, and the filter component 524 can be improved respectively.

[0271] According to the present embodiment, the arm switch array 530R extends in a ring shape in the circumferential direction CD. In this structure, the heat of the plurality of arm switch units 530 of the arm switch array 530R can be released from the entire inverter peripheral wall 91 to the outside in the circumferential direction CD. Therefore, it is not easy for heat to accumulate in a part of the inverter peripheral wall 91 and a part of the internal space of the inverter housing 90. Therefore, for example, it is possible to suppress the temperature of a part of the inverter device 80 from excessively rising and causing abnormality.

[0272] Furthermore, the capacitor column 580R and the filter column 524R extend in a ring shape along the circumferential direction CD at a position radially inwardly of the arm switch column 530R. In this structure, it is not easy for the heat of the smoothing capacitor unit 580 and the heat of the filter component 524 to accumulate in a part of the circumferential direction CD. Therefore, for example, it is possible to suppress the occurrence of abnormality in the inverter device 80 due to excessive temperature rise at a position radially inwardly of the arm switch column 530R.

[0273] According to the present embodiment, the filter component 524, which generates less heat than the smoothing capacitor unit 580 due to power-on, is disposed at a position radially inward of the smoothing capacitor unit 580. In this structure, the positional relationship between the smoothing capacitor unit 580 and the filter component 524 is set so that the heat generated on the central side of the inverter device 80 becomes as small as possible. Therefore, it is less likely that heat will accumulate on the central side of the inverter device 80. Therefore, for example, it is possible to suppress the temperature on the central side of the inverter device 80 from excessively rising and causing abnormality.

[0274] According to the present embodiment, the filter column 524R extends in a ring shape along the circumferential direction CD at a position radially inwardly of the capacitor column 580R. In this structure, it is less likely that the heat of the filter component 524 is accumulated in a portion in the circumferential direction CD at a position radially inwardly of the capacitor column 580R. Therefore, it is possible to suppress the occurrence of abnormality in the inverter device 80 due to excessive temperature rise in a portion on the central side of the inverter device 80, for example.

[0275] According to the present embodiment, the high voltage substrate 510 as a plate member is disposed at a position radially away from the inner peripheral surface 90b relative to the inverter outer peripheral wall 91. Therefore, by fixing the smoothing capacitor unit 580 and the filter component 524 to the high voltage substrate 510, it is possible to easily realize a structure in which the smoothing capacitor unit 580 and the filter component 524 are disposed radially inwardly of the arm switch unit 530.

[0276] According to the present embodiment, the group arrangement component 580c in the plurality of smoothing capacitor units 580 is arranged in a position parallel to the switch group 530G in the radial direction RD. In this structure, by arranging the group arrangement component 580c at a position radially inward of the arm switch unit 530, the separation distance between the switch group 530G and the group arrangement component 580c can be shortened as much as possible while improving the heat dissipation effect of the group arrangement component 580c. Therefore, the current path that connects the arm switch unit 530 of the switch group 530G and the group arrangement component 580c in an electrically conductive manner can be shortened to the shortest path as much as possible. Therefore, the loss generated by parasitic inductance and the like in the current path between the arm switch unit 530 and the group arrangement component 580c can be reduced.

[0277] According to the present embodiment, the inverter connector 96 is provided in the middle region Asw2 of the inverter peripheral wall 91. Therefore, it is possible to avoid the inverter connector 96 hindering the heat dissipation from the arm switch portion 530 of the inverter peripheral wall 91 in the switch region Asw1. Therefore, it is possible to suppress the heat dissipation effect of the inverter peripheral wall 91 from being reduced due to the inverter connector 96.

[0278] Furthermore, the connector arrangement component 524b among the plurality of filter components 524 is arranged at a position parallel to the inverter connector 96 in the radial direction RD. In this structure, since the arm switch unit 530 is not arranged radially outside the connector arrangement component 524b, the heat of the connector arrangement component 524b easily escapes radially outside toward the inverter connector 96. Therefore, it is possible to suppress the heat of the filter component 524 from accumulating at a position radially inside than the arm switch unit 530.

[0279] In addition, in this structure, the separation distance between the inverter connector 96 and the connector arrangement member 524b can be shortened as much as possible. Therefore, the power lines 570 and 571 connected to the connector arrangement member 524b can be led out from the inverter connector 96 through the shortest possible path such as the shortest path. In this way, since the power-on path such as the lines 141 and 142 forming the power lines 570 and 571 can be shortened as much as possible, the loss generated in the lines 141 and 142 due to parasitic inductance can be reduced.

[0280] According to the present embodiment, in the arm switch portion 530, the second plate surface 531b of the switch body 531 is in a state of overlapping with the inner peripheral surface 90b. In this structure, the heat transfer area for transferring heat from the switch body 531 to the inverter peripheral wall 91 can be increased as much as possible. Therefore, the heat of the switch body 531 is easily transferred to the inverter peripheral wall 91. The heat transfer effect of transferring heat from the switch body 531 to the inverter peripheral wall 91 can be improved.

[0281] According to the present embodiment, in the switch body 531, since the heat dissipation from the second plate surface 531b is greater than the heat dissipation from the first plate surface 531a, as much heat as possible generated in the switch body 531 can be transferred to the inverter peripheral wall 91. Therefore, a structure in which heat is easily transferred from the switch body 531 to the inverter peripheral wall 91 can be realized.

[0282] According to the present embodiment, in the arm switch unit 530, the heat of the switch body 531 is released to the outside through the first heat dissipation path PH1, and the heat of the terminals 532 to 535 is released to the outside through the second heat dissipation path PH2 and the third heat dissipation path PH3. In this way, since the heat of the arm switch unit 530 is released to the outside of the inverter peripheral wall 91 through multiple paths, the heat dissipation effect of the inverter device 80 can be improved.

[0283] <Structure Group B> <Second embodiment> In the first embodiment, the output bus 603 is provided between the P bus 601 and the N bus 602. In contrast, in the second embodiment, the output bus 603 is not provided between the P bus 601 and the N bus 602. The structure, function, and effect not particularly described in the second embodiment are the same as those in the first embodiment. In the second embodiment, the description will be centered on the differences from the first embodiment.

[0284] like Fig.29 As shown, the P bus 601 is arranged between the N bus 602 and the output bus 603. The P bus 601 is arranged between the N bus 602 and the output bus 603 in the first bus group 611 and the second bus group 612, respectively. For example, the output bus 603 included in the first bus group 611 is arranged between the ground bus 604 and the P bus 601. The N bus 602 included in the second bus group 612 is arranged between the P bus 601 and the ground bus 604.

[0285] In this embodiment, if Fig.30 As shown in FIG. 1 , the connection relationship between the arm switch unit 530 and the smoothing capacitor unit 580 and the busbars 601 to 603 is the same as that of the first embodiment. Fig.31 , Fig.32 As shown, the flows of the currents IpA, IpB, InA, InB, IoA, and IoB in the bus bars 601 to 603 are the same as those in the first embodiment.

[0286] In addition, the arrangement order of the P busbar 601, the N busbar 602, and the output busbar 603 may also be arbitrary. For example, in the first busbar group 611 and the second busbar group 612, the arrangement order of the busbars 601 to 603 may also be different. In addition, the adjacent busbars in the axial direction AD may also be the same type of busbars. For example, two P busbars 601 may also be arranged at adjacent positions in the axial direction AD. In addition, only one busbar group 611, 612 may be provided, or more than three may be provided. In addition, at least one of a plurality of P busbars 601, N busbar 602, and output busbar 603 may also be provided.

[0287] <Third Embodiment> In the first embodiment, the upper capacitor portion 580A and the lower capacitor portion 580B are arranged in opposite directions in the radial direction RD. In contrast, in the third embodiment, the upper capacitor portion 580A and the lower capacitor portion 580B are arranged in the same direction in the radial direction RD. The structure, function, and effect not particularly described in the third embodiment are the same as those in the first and second embodiments. In the third embodiment, the differences from the first and second embodiments are mainly described.

[0288] like Fig.33 As shown, in either the upper capacitor portion 580A or the lower capacitor portion 580B, the P capacitor terminal 582 is disposed radially outwardly away from the N capacitor terminal 583. The upper P capacitor terminal 582A and the lower P capacitor terminal 582B are both located radially outwardly away from the upper N capacitor terminal 583A and the lower N capacitor terminal 583B.

[0289] In this embodiment, the distances along which the P currents IpA and IpB and the N currents InA and InB flow in the radial direction RD are different from those in the first embodiment. Fig.34 As shown, in the P bus bar 601, both the upper P current IpA and the lower P current IpB flow into the upper drain terminal 532A from the P capacitor terminal 582 located radially outward from the N capacitor terminal 583. In the N bus bar 602, both the upper N current InA and the lower N current InB flowing out from the lower source terminal 533B flow into the N capacitor terminal 583 located radially inward from the P capacitor terminal 582. Therefore, the total distance that the P currents IpA and IpB flow in the radial direction RD in the P bus bar 601 is shorter than the total distance that the N currents InA and InB flow in the radial direction RD in the N bus bar 602.

[0290] In addition, the installation direction of the smoothing capacitor unit 580 may be different in the plurality of smoothing capacitor units 580 included in one capacitor group 580G. For example, in one upper capacitor group 580GA, the installation directions of the plurality of upper capacitor units 580A may be different. In addition, the installation direction of the smoothing capacitor unit 580 may be different for each phase. For example, the installation direction of the smoothing capacitor unit 580 of the U phase and the installation direction of the smoothing capacitor unit 580 of the V phase may be different. Moreover, the installation direction of all the smoothing capacitor units 580 included in the inverter device 80 may be the same.

[0291] In the smoothing capacitor section 580, the P capacitor terminal 582 and the N capacitor terminal 583 may not be arranged in the radial direction RD. For example, the P capacitor terminal 582 and the N capacitor terminal 583 may be arranged in the circumferential direction CD or in the axial direction AD. In addition, the direction in which the P capacitor terminal 582 and the N capacitor terminal 583 extend from the capacitor body 581 may not be the axial direction AD. For example, the capacitor terminals 582 and 583 may extend in the circumferential direction CD or in the radial direction RD. In addition, the directions in which the P capacitor terminal 582 and the N capacitor terminal 583 extend from the capacitor body 581 may be different.

[0292] <Fourth embodiment> In the first embodiment, a plurality of grounding busbars 604 are provided for the busbars 601 to 603. In contrast, in the fourth embodiment, only one grounding busbar 604 is provided for the busbars 601 to 603. The structure, function, and effect not particularly described in the fourth embodiment are the same as those in the first and second embodiments. In the fourth embodiment, the differences from the first and second embodiments are mainly described.

[0293] like Fig.35 As shown, the ground busbar 604 is only provided at one of a pair of outermost positions included in the plurality of plate-shaped conductors. The ground busbar 604 is provided only on the low-voltage side of the axial direction AD relative to the busbars 601 to 603, for example. With respect to the ground busbar 604, the ground busbar 604 is not provided between the busbars 601 to 603 and the capacitor body 581. The ground busbar 604 is provided on the side opposite to the capacitor body 581 across the busbars 601 to 603 in the axial direction AD.

[0294] In addition, the ground busbar 604 may also be disposed between the busbars 601 to 603. For example, the ground busbar 604 may also be disposed between the P busbar 601 and the N busbar 602. In addition, the ground busbar 604 may also be disposed between a plurality of busbar groups 611 and 612. For example, the ground busbar 604 may also be disposed between the first busbar group 611 and the second busbar group 612.

[0295] <Structure Group C> <Fifth Embodiment> In the first embodiment, the second plate surface 531b overlaps with the inner peripheral surface 90b in the switch body 531. In contrast, in the second embodiment, the body base end portion 531c in the switch body 531 overlaps with the inner peripheral surface 90b. The structure, function, and effect not specifically described in the fifth embodiment are the same as those in the first embodiment. In the fifth embodiment, the description will be centered on the differences from the first embodiment.

[0296] like Fig.36 As shown in FIG. 1 , the plate-shaped switch body 531 extends in a direction perpendicular to the axial direction AD. In the switch body 531 , a body base end portion 531 c contacts the inner peripheral surface 90 b .

[0297] The switch body 531 is disposed between the high voltage substrate 510 and the drive substrate 550 in the axial direction AD. In the axial direction AD, the switch body 531 is located at a position away from any one of the high voltage substrate 510 and the drive substrate 550. In the present embodiment, the switch body 531 is located closer to the high voltage substrate 510 than to the drive substrate 550. In addition, the switch body 531 may be located at a position crossing the substrate middle line Cmid in the axial direction AD, or may be located at a position away from the substrate middle line Cmid in the axial direction AD.

[0298] The entire switch body 531 is disposed between the first high-pressure surface 510a and the second control surface 550b in the axial direction AD. The switch body 531 does not extend from the first high-pressure surface 510a to the high-pressure side, nor does it extend from the second control surface 550b to the low-pressure side in the axial direction AD. The entire switch body 531 is included in the projection area of ​​the substrate area projected toward the radial outside.

[0299] The terminals 532 to 535 are formed into an L-shaped curved shape as a whole. In the terminals 532 to 535, the base end extension portion 536a extends from the switch body 531 toward the radial inner side. Moreover, in the drain terminal 532 and the source terminal 533, the front end extension portion 536b extends from the base end extension portion 536a toward the high voltage side of the axial direction AD. In the gate terminal 534 and the driver source terminal 535, the front end extension portion 536b extends from the base end extension portion 536a toward the low voltage side of the axial direction AD.

[0300] <Sixth embodiment> In the first embodiment, the arm switch unit 530 is a 4-terminal type switch module. In contrast, in the second embodiment, the plurality of arm switch units 530 include a 4-terminal type switch module and a 6-terminal type switch module. In the sixth embodiment, the structure, function, and effect not specifically described are the same as those in the first embodiment. In the sixth embodiment, the description will be centered on the differences from the first embodiment.

[0301] like Fig.37As shown, the 4-terminal arm switch unit 530 and the 6-terminal arm switch unit 530 are included in a plurality of arm switch units 530. In the present embodiment, the 4-terminal type switch module is referred to as the 4-terminal arm switch unit 530. Similarly, the 6-terminal type switch module is referred to as the 6-terminal arm switch unit 530. The 4-terminal arm switch unit 530 and the 6-terminal arm switch unit 530 are included in one switch group 530G. In one switch group 530G, the 4-terminal arm switch unit 530 and the 6-terminal arm switch unit 530 are electrically connected in parallel. For example, a plurality of 4-terminal arm switch units 530 and a plurality of 6-terminal arm switch units 530 are included in one switch group 530G.

[0302] The 6-terminal arm switch unit 530 has an anode terminal 591 and a cathode terminal 592 in addition to the terminals 532 to 535. The 6-terminal arm switch unit 530 has a temperature sensing diode (not shown). The temperature sensing diode is a temperature sensor that detects the temperature of the arm switch 86. The temperature sensing diode can detect the temperature of the arm switch unit 530. The anode terminal 591 is connected to the anode of the temperature sensing diode. The cathode terminal 592 is connected to the cathode of the temperature sensing diode. The anode terminal 591 and the cathode terminal 592 are detection terminals, and are connected to the drive substrate 550 in a manner that can be energized.

[0303] The anode terminal 591 and the cathode terminal 592 are arranged along the width direction of the switch body 531 together with the terminals 532 to 535. In the present embodiment, the anode terminal 591 and the cathode terminal 592 are arranged along the circumferential direction CD together with the terminals 532 to 535. In addition, the terminals 532 to 535, 591, and 592 may or may not be offset in the radial direction RD.

[0304] <Seventh embodiment> In the sixth embodiment, a 4-terminal arm switch unit 530 and a 6-terminal arm switch unit 530 are mixed in one switch group 530G. In contrast, in the second embodiment, only one of the 4-terminal arm switch unit 530 and the 6-terminal arm switch unit 530 is included in one switch group 530G. The structure, function, and effect not particularly described in the seventh embodiment are the same as those in the sixth embodiment. In the seventh embodiment, the description will be centered on the differences from the sixth embodiment.

[0305] like Fig.38 As shown, one switch group 530G includes only the 6-terminal arm switch unit 530 of the 4-terminal arm switch unit 530 and the 6-terminal arm switch unit 530 .

[0306] In addition, all of the plurality of arm switch units 530 included in the inverter device 80 may be 6-terminal arm switch units 530. In addition, the plurality of switch groups 530G included in the inverter device 80 may include a switch group 530G including only 4-terminal arm switch units 530 and a switch group 530G including only 6-terminal arm switch units 530. In addition, the plurality of switch groups 530G may include a switch group 530G including only one of 4-terminal and 6-terminal arm switch units 530 and a switch group 530G including both 4-terminal and 6-terminal arm switch units 530.

[0307] <Eighth Embodiment> In the sixth embodiment, the plurality of arm switch parts 530 include a 6-terminal type switch module. In contrast, in the eighth embodiment, the plurality of arm switch parts 530 include a 7-terminal type switch module. The structure, function, and effect not particularly described in the eighth embodiment are the same as those in the first embodiment. In the eighth embodiment, the description will be centered on the differences from the first embodiment.

[0308] like Fig.39 As shown, the 7-terminal arm switch unit 530 is included in a plurality of arm switch units 530. In this embodiment, the 7-terminal type switch module is referred to as a 7-terminal arm switch unit 530. A plurality of 7-terminal arm switch units 530 are included in one switch group 530G. For example, only a 7-terminal arm switch unit 530 is included in one switch group 530G.

[0309] The 7-terminal arm switch unit 530 has a sense source terminal 593 in addition to the terminals 532 to 535, 591, and 592. The 7-terminal arm switch unit 530 has a current detection unit (not shown). The current detection unit can detect the current flowing through the arm switch 86. The sense source terminal 593 is connected to the current detection unit. The sense source terminal 593 is a detection terminal and is connected to the drive substrate 550 in a manner that allows electricity to flow.

[0310] The sensing source terminal 593 is arranged along the width direction of the switch body 531 together with the terminals 532 to 535, 591, and 592. In the present embodiment, the sensing source terminal 593 is arranged along the circumferential direction CD together with the terminals 532 to 535, 591, and 592. In addition, the terminals 532 to 535, 591 to 593 may be offset in the radial direction RD, or may not be offset in the radial direction RD.

[0311] In addition, all of the multiple arm switch units 530 of the inverter device 80 may be 7-terminal arm switch units 530. In addition, the multiple arm switch units 530 of the inverter device 80 may include multiple types of arm switch units 530. For example, the multiple arm switch units 530 may include at least one arm switch unit 530 with 4 terminals, 6 terminals, and 7 terminals. In addition, multiple types of arm switch units 530 may be included in one switch group 530G. For example, the multiple arm switch units 530 may include at least one arm switch unit 530 with 4 terminals, 6 terminals, and 7 terminals.

[0312] <Other embodiments> The disclosure of this specification is not limited to the illustrated embodiments. The present disclosure includes the illustrated embodiments and the variations made by those skilled in the art based thereon. For example, the present disclosure is not limited to the combination of components and elements shown in the embodiments, and various variations can be made to implement it. The present disclosure can be implemented in various combinations. The present disclosure may have additional parts that can be added to the embodiments. The present disclosure includes a structure in which components and elements of the embodiments are omitted. The present disclosure includes the replacement or combination of components and elements between one embodiment and another. The technical scope of the present disclosure is not limited to the description of the embodiments. The technical scope of the present disclosure should be understood to be represented by the description of the claims, and also includes all variations in the meaning and scope equivalent to the description of the claims.

[0313] <Structure Group A> In the above-mentioned embodiments, as long as the plurality of beams 501 are arranged in the circumferential direction CD, the plurality of beams 501 may be located at any position in the circumferential direction CD and the axial direction AD. For example, the beam 501 may be located at a position closer to the low-pressure side end than the high-pressure side end in the inverter peripheral wall 91, or may be located at a position closer to the high-pressure side end than the low-pressure side end. In addition, the beam 501 may also be located at a position overlapping with the inverter fin 92 in the radial direction RD.

[0314] In each of the above-mentioned embodiments, the beam connecting portion 502 only needs to be able to connect a plurality of beam portions 501, and may not be annular. For example, the connecting opening 504 may not be provided in the beam connecting portion 502. It is sufficient that a plate member such as a high-voltage substrate 510 is fixed to the beam portion 501, or it may not be fixed to the beam connecting portion 502. The component support portion 500 only needs to have a beam portion 501, or it may not have a beam connecting portion 502. For example, the component support portion 500 may also have a plurality of beam portions 501 that are independent of each other. In this case, it is sufficient that a plate member such as a high-voltage substrate 510 is mounted on a plurality of beam portions 501 and fixed. It is sufficient that the plate member is fixed to at least one beam portion 501.

[0315] In the above-mentioned embodiments, the beam 501 and the inverter peripheral wall 91 may not be integrally formed. For example, the beam 501 may be subsequently installed on the inverter peripheral wall 91. In addition, the beam 501 and the inverter peripheral wall 91 may not be conductive. For example, at least one of the beam 501 and the inverter peripheral wall 91 may not have electrical conductivity or have low electrical conductivity. Moreover, the beam 501 and the inverter peripheral wall 91 may not be able to transfer heat. For example, at least one of the beam 501 and the inverter peripheral wall 91 may not have thermal conductivity or have low thermal conductivity.

[0316] In the above-mentioned embodiments, the two plate members facing each other across the beam 501 can be circuit substrates. For example, the control substrate 560 can be mounted on a plurality of beams 501 and fixed to the plurality of beams 501. In addition, both of the two plate members facing each other across the beam 501 can be high-voltage substrates 510 or low-voltage substrates such as drive substrates 550. The drive substrate 550 and the control substrate 560 can also be integrated.

[0317] In the above-mentioned embodiments, the plate member mounted and fixed to the plurality of beams 501 may not be a circuit substrate such as the high-voltage substrate 510. For example, a plate made of insulating glass may be mounted and fixed to the plurality of beams 501 as a plate member. In addition, at least one of the first plate member such as the high-voltage substrate 510 and the second plate member such as the drive substrate 550 may be a plate member that is not a circuit substrate.

[0318] In the above-mentioned embodiments, the plate member such as the high-voltage substrate 510 fixed to the beam portion 501 may not be annular. For example, it may be a plate member without openings such as the substrate opening 513. In addition, the plate member such as the high-voltage substrate 510 may be provided only on one side of the beam portion 501 in the axial direction AD. In the axial direction AD, in at least one side of the beam portion 501, a plurality of plate members may be arranged along the beam portion 501 in at least one direction of the radial direction RD and the circumferential direction CD.

[0319] In each of the above-mentioned embodiments, the arm switch portion 530 only needs to be set at a position deviated from the beam portion 501 in the axial direction AD, and may also be set at a position closer to the low-voltage side than the beam portion 501. In addition, the arm switch portion 530 may also be set at a position overlapping with the beam portion 501 in the axial direction AD. For example, the arm switch portion 530 and the beam portion 501 may also be arranged in the circumferential direction CD. In addition, at least a portion of the arm switch portion 530 may also be set at a position overlapping with a plate member such as a high-voltage substrate 510 in the axial direction AD. For example, a portion of the arm switch portion 530 may also be in a state of entering between the high-voltage substrate 510 and the drive substrate 550.

[0320] In the above-mentioned embodiments, the plate surfaces 531a and 531b of the switch body 531 may not be oriented orthogonal to the radial direction RD. For example, the switch body 531 may be oriented such that the plate surfaces 531a and 531b are orthogonal to the axial direction AD. In addition, the switch body 531 may be oriented such that the plate surfaces 531a and 531b are orthogonal to the circumferential direction CD.

[0321] In the above-mentioned embodiments, the switch body 531 may also be fixed to at least one of the plate member such as the high-voltage substrate 510 and the inverter peripheral wall 91. For example, the switch body 531 may also be fixed to the high-voltage substrate 510. In addition, the switch body 531 may also be arranged at a position away from the inverter peripheral wall 91 in the radial direction. In these structures, if a plurality of arm switch parts 530 are arranged along the inner peripheral surface 90b, the heat of the arm switch parts 530 is easily applied to the inverter peripheral wall 91.

[0322] In each of the above-mentioned embodiments, the plurality of arm switch parts 530 may not be arranged in one row, but may be arranged in multiple rows in the circumferential direction CD. The multiple rows may be arranged in the axial direction AD or in the radial direction RD. For example, the plurality of arm switch parts 530 of a switch group 530G may be arranged in two rows. In addition, two switch groups 530G having a plurality of arm switch parts 530 arranged in one row may be arranged in the axial direction AD. In addition, as a power module that gathers a plurality of arm switch parts 530 on a plane, a plane may be formed on the inner circumferential surface 90b and arranged on the plane.

[0323] In each of the above-mentioned embodiments, the switch group 530G may be provided at a position overlapping the beam 501 in the circumferential direction CD. For example, one switch group 530G may be provided at a position straddling the beam 501 in the circumferential direction CD. In addition, one switch group 530G may be provided across two adjacent beams 501 in the circumferential direction CD.

[0324] <Structure Group B> In the above-mentioned embodiments, the upper arm switch unit 530A and the lower arm switch unit 530B may not have output control terminals such as the driver source terminal 535. Fig. 22As shown, the driving power supply 620 may also be a structure in which a control voltage is applied to the source terminal 533 and the gate terminal 534. That is, the arm switch unit 530 may also be a 3-terminal type switch module. The arm switch unit 530 has a drain terminal 532, a source terminal 533, and a gate terminal 534, but does not have a driver source terminal 535. Even if the first switch unit 530A1 and the second switch unit 530A2 are 3-terminal types, as in the first embodiment described above, if a difference occurs in the inductance Ls1 and the inductance Ls2, current imbalance is likely to occur. Therefore, even if the first switch unit 530A1 and the second switch unit 530A2 are 3-terminal types, as in the first embodiment described above, current imbalance can be suppressed by reducing the inductance L603.

[0325] In the above-mentioned embodiments, as long as the high potential current such as the upper P current IpA, the low potential current such as the upper N current InA, and the output current such as the upper output current IoA flow through the overlapping area AO, the upper arm switch part 530A and the lower arm switch part 530B can be arranged in any manner. For example, the upper arm switch part 530A and the lower arm switch part 530B can also be arranged at a position offset in the axial direction AD and the radial direction RD. In addition, the upper arm switch part 530A and the lower arm switch part 530B can also be arranged one each, instead of arranging multiple ones. The upper arm switch part 530A and the lower arm switch part 530B can also be arranged on the substrate 510, 550, 560 and the component support part 500, etc. The upper arm switch part 530A and the lower arm switch part 530B can also be arranged at a position away from the inner peripheral surface 90b inward in the radial direction.

[0326] In the above-mentioned embodiments, as long as the high potential current such as the upper P current IpA, the low potential current such as the upper N current InA, and the output current such as the upper output current IoA flow through the overlapping area AO, the capacitor components such as the smoothing capacitor unit 580 can be arranged in any manner. For example, the smoothing capacitor unit 580 can also be arranged at a position separated from the upper arm switch unit 530A and the lower arm switch unit 530B in the circumferential direction CD and the axial direction AD. The smoothing capacitor unit 580 can also be arranged at a position away from the overlapping area AO. The smoothing capacitor unit 580 can also be arranged with only one relative to the upper arm switch unit 530A and the lower arm switch unit 530B. The capacitor component may not be the smoothing capacitor unit 580. For example, the X capacitor unit 528 can also be arranged as a capacitor component.

[0327] In the above-mentioned embodiments, the direction in which the busbars 601 to 603 extend may not be the circumferential direction CD. For example, if the busbars 601 to 603 are provided at a portion extending linearly in a predetermined direction in the inverter outer peripheral wall 91, the direction in which the busbars 601 to 603 extend is the predetermined direction. The direction in which the busbars 601 to 603 overlap may also be the circumferential direction CD, the radial direction RD, etc.

[0328] In the above embodiments, the high potential conductor, the low potential conductor and the output conductor may be conductors other than bus bars, and may be other than plate-shaped as long as they extend along each other.

[0329] In each of the above embodiments, it is sufficient that at least one of the high potential conductor and the low potential conductor extends along the output conductor. For example, it is configured so that only one of the high potential conductor and the low potential conductor extends along the output conductor. In this structure, it is sufficient that in the overlapping area AO where the output currents IoA and IoB flow, one of the P currents IpA and IpB and the N currents InA and InB flows in the circumferential direction CD in the opposite direction to the output currents IoA and IoB. In this structure, the smoothing capacitor unit 580 is equivalent to a parallel component, and one of the P currents IpA and IpB and the N currents InA and InB is equivalent to a parallel current. In addition, one of the P busbar 601 and the N busbar 602 is equivalent to a power conductor.

[0330] According to this structure, in the overlapping area AO, the parallel current flowing in one of the P bus 601 and the N bus 602 is opposite to the output current IoA, IoB flowing in the output bus 603 in the circumferential direction CD. Therefore, by canceling the magnetic field generated by the parallel current and the magnetic field generated by the output currents IoA, IoB, the parasitic inductance generated in one of the P bus 601 and the N bus 602 and the output bus 603 can be reduced.

[0331] <Structure Group C> In the above-mentioned embodiments, the main body heat dissipation portion 538 may be provided at any position of the switch main body 531. In addition, it is preferred that the main body heat dissipation portion 538 is provided at a position in the switch main body 531 that contacts the inverter outer peripheral wall 91. For example, in a structure in which the main body base end portion 531c of the switch main body 531 contacts the inner peripheral surface 90b, it is preferred that the main body heat dissipation portion 538 is provided at the main body base end portion 531c in a manner that contacts the inner peripheral surface 90b.

[0332] In each of the above-mentioned embodiments, the power terminals such as the drain terminal 532 may also be in a state of crossing the substrate middle line Cmid in the axial direction AD. For example, in a structure in which the switch body 531 is located at a position closer to the low voltage side than the substrate middle line Cmid, the power terminals are in a state of crossing the substrate middle line Cmid in the axial direction AD. In addition, the control terminals such as the gate terminal 534 may not be in a state of crossing the substrate middle line Cmid in the axial direction AD. For example, in a structure in which the switch body 531 is located at a position closer to the low voltage side than the substrate middle line Cmid, the control terminals can be configured at a position closer to the low voltage side than the substrate middle line Cmid.

[0333] In the above embodiments, the switch body 531 may be arranged in any direction. Fig.36 As shown, the switch body 531 can be disposed in a direction perpendicular to the axial direction AD, or in a direction perpendicular to the circumferential direction CD.

[0334] In the above-mentioned embodiments, the position where the switch body 531 is provided may not be a position closer to the high-voltage substrate 510 than the drive substrate 550. For example, the switch body 531 may be provided at a position closer to the drive substrate 550 than the high-voltage substrate 510. In addition, the portion of the switch body 531 provided between the first high-voltage surface 510a and the second control surface 550b in the axial direction AD may not be the body base end portion 531c. For example, at least the body front end portion 531d may be included in the projection area where the substrate area is projected radially outward.

[0335] In the above-mentioned embodiments, as long as the plurality of arm switch parts 530 are arranged along the outer peripheral ends 512 and 552 in the circumferential direction CD, the switch body 531 may not be provided on the inner peripheral surface 90b. For example, the switch body 531 may be provided at a position away from the inner peripheral surface 90b in the radial direction. In addition, the switch body 531 may also be provided on at least one of the high-voltage substrate 510 and the drive substrate 550. In addition, from the viewpoint of suppressing the reduction in the operating accuracy of the drive substrate 550 caused by the noise from the switch body 531, it is preferred that the switch body 531 is not provided on the drive substrate 550.

[0336] In each of the above-mentioned embodiments, the power peripheral end such as the peripheral end 512 and the control peripheral end such as the peripheral end 552 may also extend intermittently in the circumferential direction CD. As a structure in which the power peripheral end and the control peripheral end extend intermittently in the circumferential direction CD, for example, there is a structure in which a plurality of recesses recessed radially inward are arranged in the circumferential direction CD at the power peripheral end and the control peripheral end. In this structure, if a power terminal such as the drain terminal 532 is connected between two adjacent recesses in the circumferential direction CD in a power connection object such as the high-voltage substrate 510, the length deviation of the plurality of power terminals can be suppressed. Similarly, if a control terminal such as the gate terminal 534 is connected between two adjacent recesses in the circumferential direction CD in a control connection object such as the drive substrate 550, the length deviation of the plurality of control terminals can be suppressed.

[0337] In the above-mentioned embodiments, as long as the power peripheral end and the control peripheral end extend along the circumferential direction CD, the power peripheral end and the control peripheral end may not be annular. For example, a plurality of the power peripheral end and the control peripheral end may be arranged in the circumferential direction CD. Similarly, as long as the arm switch array 530R extends in the circumferential direction CD, it may not be annular. For example, a plurality of the arm switch array 530R may be arranged in the circumferential direction CD.

[0338] In the above-mentioned embodiments, the power connection object and the control connection object may not be a circuit substrate. For example, the P bus 601, the N bus 602 and the output bus 603 as the power connection object may also be provided independently of the high voltage substrate 510. In addition, the power connection object and the control connection object may not be arranged in the axial direction AD. For example, the control connection object may also be provided radially inside the power connection object.

[0339] <Structure group D> In the above-mentioned embodiments, as long as the arm switch unit 530 and the inverter peripheral wall 91 can conduct heat transfer, any part of the arm switch unit 530 can be fixed to the inverter peripheral wall 91. For example, in the switch body 531, at least one of the body base end 531c and the body front end 531d can be fixed to the inner peripheral surface 90b. In addition, in the arm switch unit 530, the terminals 532 to 535 can be fixed to the inverter peripheral wall 91.

[0340] In the above-mentioned embodiments, in one column of the arm switch column 530R, in at least a part of the circumferential direction CD, the arm switch parts 530 may be arranged in the circumferential direction CD according to a prescribed number. In addition, the arm switch column 530R may not be one column but multiple columns. For example, two columns of arm switch columns 530R may be arranged in the axial direction AD. In the arm switch column 530R, a plurality of arm switch parts 530 may be arranged at equal intervals. For example, the arm switch parts 530 may be arranged regardless of the positions of the inverter fins 92 and the beam part 501. In addition, the arm switch column 530R may not be annular. For example, the arm switch column 530R may be provided only in a part of the circumferential direction CD relative to the inverter outer peripheral wall 91. Moreover, if a plurality of arm switch parts 530 are arranged in the circumferential direction CD, the arm switch column 530R may not be formed by these arm switch parts 530.

[0341] These modifications related to the arm switch array 530R can also be applied to the capacitor array 580R and the filter array 524R in the same manner. For example, in a configuration in which the capacitor array 580R is composed of two arrays, the two capacitor arrays 580R may be arranged in the radial direction RD.

[0342] In each of the above-mentioned embodiments, as long as the arm switch portion 530 is in contact with the inner peripheral surface 90b, the arm switch portion 530 may be directly fixed to the inverter outer peripheral wall 91 or may be indirectly fixed. As a structure in which the arm switch portion 530 is directly fixed to the inverter outer peripheral wall 91, there is a structure in which the switch body 531 is fixed to the inner peripheral surface 90b by an adhesive or the like as in the above-mentioned first embodiment. In addition, even if the switch body 531 is not fixed to the inner peripheral surface 90b, it is fixed to the inverter outer peripheral wall 91 via the terminals 532 to 535, the substrates 510 and 550, and the component support portion 500. That is, the arm switch portion 530 is indirectly fixed to the inverter outer peripheral wall 91 via the high-voltage substrate 510, the drive substrate 550, and the component support portion 500.

[0343] In the above-described embodiments, the filter array 524R only needs to include at least one filter component 524. For example, the filter array 524R only needs to include at least one of the common mode coil 525, the normal mode coil 526, the Y capacitor 527, and the X capacitor 528.

[0344] In the above-mentioned embodiments, in the small thermal component array, the filter array 524R may be arranged at a position radially outward from the capacitor array 580R. In addition, in one small thermal component array, the smoothing capacitor unit 580 and the filter component 524 may be mixed. In addition, as long as the plate member on which the small thermal component array such as the capacitor array 580R is arranged is a circuit substrate, it may not be the high voltage substrate 510, and may not be a circuit substrate. For example, the capacitor array 580R may be arranged on a plate made of glass.

[0345] <Common> In each of the above-mentioned embodiments, it is sufficient as long as a cover member such as the inverter cover 99 is provided on at least one of the high-pressure side and the low-pressure side of the inverter housing 90. In addition, the cover member may be formed of a thick-walled plate or a thin-walled plate. The cover member may also have heat insulation properties. For example, in a structure in which a cover member having heat insulation properties is provided between the motor housing 70 and the inverter housing 90, the heat transfer from the motor device 60 to the inverter device 80 can be suppressed by the cover member. As long as the cover member on the opposite side of the motor housing 70 is a member with good heat conduction, such as aluminum, heat dissipation to the outside of the inverter can be promoted. In this structure, the cooling effect of the inverter device 80 can be improved by the cover member. In addition, the cover member may not be provided on either the high-pressure side or the low-pressure side of the inverter housing 90.

[0346] In the above-mentioned embodiments, as long as the heat is released to the outside from the outer peripheral surface 90a or the cover member, the inverter fins 92 may not be provided on the inverter outer peripheral wall 91. Alternatively, a water-cooling passage may be provided instead of the inverter fins 92. In addition, as long as the inverter housing 90 is formed in an annular shape as a whole, it may not be an annular shape. For example, the inverter outer peripheral wall 91 may not be an annular shape when viewed from above, and may be formed in a polygonal shape when viewed from above. As the polygon, for example, a polygon larger than a pentagon is preferred.

[0347] In each of the above-mentioned embodiments, the EPU 50 may include at least one of a plurality of motor devices 60 and inverter devices 80. Fig.40 As shown, one EPU 50 may also include two motor devices 60 and two inverter devices 80. In a structure in which the EPU 50 includes at least one of a plurality of motor devices 60 and inverter devices 80, all the motor devices 60 and all the inverter devices 80 may be arranged along the axial direction AD. In this structure, for example, Fig.40 As shown, the motor devices 60 and the inverter devices 80 may be arranged alternately. In this structure, two motor devices 60 may be arranged adjacent to each other in the axial direction AD, or two inverter devices 80 may be arranged adjacent to each other in the axial direction AD. In addition, the inverter device 80 may be sandwiched between a plurality of motor devices 60, or more than one motor device 60 may be sandwiched between a plurality of inverter devices 80.

[0348] Preferably, the motor device 60 and the inverter device 80 are configured to be easily overlapped in the axial direction AD. For example, in a configuration in which a plurality of inverter devices 80 overlap in the axial direction AD, it is preferred that the outer peripheral walls 91 of each inverter have the same shape and size when viewed from above. Thus, design changes such as increased redundancy, increased output, and multi-phase operation of the EPU 50 can be addressed by the motor device 60 and the inverter device 80. In addition, in the EPU 50, the motor device 60 and the inverter device 80 may be arranged in the radial direction RD.

[0349] In each of the above embodiments, at least one EPU 50 may be provided for a driving object such as a wheel or a rotor. For example, a plurality of EPUs 50 may be provided for one driving object. Fig.41 As shown, two EPUs 50 may be provided for one speed reducer 53. A plurality of EPUs 50 may be arranged side by side in the radial direction RD.

[0350] In the above-mentioned embodiments, the motor electromagnetic circuit 61 may be a radial gap type motor. In the motor electromagnetic circuit 61, for example, a stator is provided radially outside the rotor. The rotor may be either an inner rotor type or an outer rotor type.

[0351] [Feature A1] A power conversion device, wherein the power conversion device (80) converts electric power, wherein the power conversion device comprises: A housing (90) having an outer peripheral wall (91) extending in an annular shape; and A plurality of beam portions (501), the plurality of beam portions extending from the outer peripheral wall toward the inside in the radial direction (RD) of the outer peripheral wall, and a plurality of beam portions arranged in the circumferential direction (CD) of the outer peripheral wall; a plate member (510, 550) extending in a plate shape in a direction perpendicular to the axial direction (AD) of the outer peripheral wall and fixed to the plurality of beams in a state of being bridged over the plurality of beams; and The mounting components (146, 147, 525-528, 580) are energizable and mounted on the plate member.

[0352] [Feature A2] The power conversion device as described in feature A1, wherein the power conversion device comprises: a first plate member (510) as a plate member, the first plate member being disposed on one side of the beam portion in the axial direction; and A second plate member (550) is a plate member, and the second plate member is provided on the opposite side to the first plate member across the beam portion in the axial direction.

[0353] [Feature A3] A power conversion device as described in feature A2, wherein: The first plate member is a high voltage substrate (510) to which a high voltage is applied, The second plate member is a low voltage substrate (550) to which a low voltage lower than a high voltage is applied.

[0354] [Feature A4] A power conversion device as described in any one of features A1 to A3, wherein: The invention comprises a switch component (530) having a switching switch (86) for switching electric power, a plurality of which are arranged in a circumferential direction along the outer peripheral end (512, 552) of the plate member and fixed to the inner peripheral surface (90b) of the outer peripheral wall.

[0355] [Feature A5] A power conversion device as described in feature A4, wherein: The invention comprises a switch group (539), wherein the switch group has a plurality of switch components arranged in a circumferential direction, and a plurality of switch components are arranged in a circumferential direction along the outer peripheral end of the plate member, The beam portion extends inward from the outer peripheral wall between two switch groups adjacent to each other in the circumferential direction.

[0356] [Feature A6] A power conversion device as described in feature A4 or A5, wherein: The switch component comprises: a switch body (531) having a switch element; and switch terminals (532-535) extending from the switch body. The switch body is arranged at a position away from the beam portion and the plate member.

[0357] [Feature A7] A power conversion device as described in any one of features A4 to A6, wherein: The heat dissipation fin (92) extends from the outer peripheral wall toward the radial outside and releases heat to the outside. The switch component is disposed at a position parallel to the heat dissipation fins in the radial direction.

[0358] [Feature A8] A power conversion device as described in any one of features A1 to A7, wherein: The invention comprises a beam connection part (502) which is arranged at a position away from the outer peripheral wall toward the inner side in the radial direction and connects a plurality of beam parts.

[0359] [Feature A9] A power conversion device as described in feature A8, wherein: The beam connection portion extends in a ring shape in the circumferential direction.

[0360] [Feature A10] A power conversion device as described in any one of features A1 to A9, wherein: The beam portion and the outer peripheral wall can transfer heat.

[0361] [Feature A11] A power conversion device as described in any one of features A1 to A10, wherein: The beam portion is in conduction with the outer peripheral wall.

[0362] [Feature A12] A rotating motor unit (50) is driven by supply of electric power, wherein the rotating motor unit comprises: A rotating electrical machine (60) comprising a rotor (300) and a stator (200); and A power conversion device (80) converts power supplied to a rotating electrical machine. The power conversion device has A housing (90) having an outer peripheral wall (91) extending in an annular shape and fixed to the rotating electrical machine; A plurality of beam portions (501), the plurality of beam portions extending from the outer peripheral wall toward the inside in the radial direction (RD) of the outer peripheral wall, and a plurality of beam portions arranged in the circumferential direction (CD) of the outer peripheral wall; a plate member (510, 550) extending in a plate shape in a direction perpendicular to the axial direction (AD) of the outer peripheral wall and fixed to the plurality of beams in a state of being bridged over the plurality of beams; and The mounting components (146, 147, 525-528, 580) are energizable and mounted on the plate member.

[0363] [Feature A13] A rotating electrical machine unit as described in feature A12, wherein: In the power conversion device, the peripheral wall is a device peripheral wall (91), A rotating electrical machine has: A motor peripheral wall (71), which extends in an annular shape, accommodates a rotor and a stator, and is arranged side by side with the device peripheral wall in the axial direction; and a cover (62) fixed to the outer peripheral wall of the motor and covering the rotor and the stator from the outer peripheral wall side of the device, The power conversion device has a heat insulating portion (545) which is provided between the plate member and the cover portion, extends along the cover portion, and has heat insulating properties.

[0364] [Feature A14] A power conversion device, The power conversion device is a power conversion device or an inverter device (80) for converting electric power, wherein the power conversion device comprises: A housing (90), the housing having an annular outer wall (91), a transistor switch (530) on the inner side of the outer wall, and cooling fins (92) on the outer side of the outer wall; A plurality of beam portions (501), the plurality of beam portions extending from the outer peripheral wall toward the inside in the radial direction (RD) of the outer peripheral wall, and a plurality of beam portions arranged in the circumferential direction (CD) of the outer peripheral wall; A plate member (510, 550), which extends in a plate shape in a direction perpendicular to the axial direction (AD) of the outer peripheral wall and is fixed to multiple beam parts in a state of being mounted on multiple beam parts; and a mounting component (146, 147, 525~528, 580), which is mounted on the plate member.

[0365] [Feature A15] A rotating motor unit (50) is driven by supply of electric power, wherein the rotating motor unit comprises: A rotating electrical machine (60) comprising a rotor (300) and a stator (200); and A power conversion device (80) converts power supplied to a rotating electrical machine. The power conversion device is a power conversion device or an inverter device (80) for converting electric power. The power conversion device includes: A housing (90), the housing having an annular outer wall (91), a transistor switch (530) on the inner side of the outer wall, and cooling fins (92) on the outer side of the outer wall; A plurality of beam portions (501), the plurality of beam portions extending from the outer peripheral wall toward the inside in the radial direction (RD) of the outer peripheral wall, and a plurality of beam portions arranged in the circumferential direction (CD) of the outer peripheral wall; A plate member (510, 550), which extends in a plate shape in a direction perpendicular to the axial direction (AD) of the outer peripheral wall and is fixed to multiple beam parts in a state of being mounted on multiple beam parts; and a mounting component (146, 147, 525~528, 580), which is mounted on the plate member.

[0366] [Feature B1] A power conversion device, wherein the power conversion device (80) converts electric power, wherein the power conversion device comprises: A high potential conductor (601) on the high potential side, the high potential conductor extending in an extension direction (CD) and supplied with power; a low potential conductor (602) on the low potential side, the low potential conductor extending along the high potential conductor in an extending direction and supplied with power; an output conductor (603), the output conductor extending along the high potential conductor and the low potential conductor in an extending direction and used for outputting electric power; An upper switch component (530A) on the high potential side for switching in order to convert electric power; A lower switch component (530B) on the low potential side that switches for converting electric power; and A capacitor component (580, 580A, 580B), the capacitor component being electrically connected in parallel with the upper switch component and the lower switch component, In the output conductor, the upper switch component and the lower switch component are connected to positions separated from each other in the extending direction in such a manner that the output current (IoA, IoB) flows from the upper switch component toward the lower switch component in the extending direction in the output conductor, The capacitor component and the upper switch component are connected in the high potential conductor in such a manner that the high potential current (IpA, IpB) flows in the high potential conductor from the capacitor component toward the upper switch component in the direction opposite to the output current in an overlapping area (AO) overlapping with the output current in the extending direction. The lower switch component and the capacitor component are connected to the low potential conductor so that the low potential current (InA, InB) flows in the low potential conductor from the lower switch component toward the capacitor component in the overlapping region in the opposite direction to the output current.

[0367] [Feature B2] The power conversion device as described in feature B1, wherein: A plurality of upper switch parts included in one phase and a plurality of lower switch parts included in one phase are arranged along the high potential conductor, the low potential conductor and the output conductor in an extending direction.

[0368] [Feature B3] A power conversion device as described in feature B1 or B2, wherein: The invention comprises a housing (90) having an outer peripheral wall (91) extending annularly in a circumferential direction (CD) as an extending direction, The high potential conductor, the low potential conductor and the output conductor extend in the circumferential direction along the inner circumferential surface (90b) of the outer circumferential wall. A plurality of upper switch components included in one phase and a plurality of lower switch components included in one phase are arranged in the circumferential direction along the inner peripheral surface.

[0369] [Feature B4] A power conversion device as described in feature B3, wherein: The upper switch member and the lower switch member are located away from the high potential conductor, the low potential conductor, and the output conductor toward the outside in the radial direction (RD), and are provided on the inner peripheral surface.

[0370] [Feature B5] The power conversion device as described in feature B3 or B4, wherein the power conversion device comprises: an upper capacitor component (580A) as a capacitor component, the upper capacitor component being arranged in parallel with the upper switch component in the radial direction (RD) of the outer peripheral wall and being away from the upper switch component in the radial direction inward; and A lower capacitor member (580B) as a capacitor member, the lower capacitor member being arranged in parallel with the lower switch member in the radial direction and being away from the lower switch member in the radial direction inwardly. The upper capacitor part and the lower capacitor part have a high capacitor terminal (582) connected to the high potential conductor and a low capacitor terminal (583) connected to the low potential conductor, In one of the upper capacitor member and the lower capacitor member, the upper capacitor terminal is provided radially outwardly relative to the lower capacitor terminal, and in the other, the lower capacitor terminal is provided radially outwardly relative to the upper capacitor terminal.

[0371] [Feature B6] The power conversion device as described in any one of features B1 to B5, wherein the power conversion device comprises: an upper switch group (530GA), the upper switch group having a plurality of upper switch components included in one phase and arranged along an extension direction; and a lower switch group (530GB), the lower switch group being arranged in parallel with the upper switch group in the extension direction and having a plurality of lower switch components included in the same phase as the plurality of upper switch components of the upper switch group and arranged in the extension direction, The overlapping area is an area extending along the extension direction in a manner such that the farthest upper part (530Af) located at the farthest position from the lower switch group among the multiple upper switch parts of the upper switch group is provided and the farthest lower part (530Bf) located at the farthest position from the upper switch group among the multiple lower switch parts of the lower switch group is provided.

[0372] [Feature B7] The power conversion device as described in any one of features B1 to B6, wherein the power conversion device comprises: a first capacitor group (580GA), the first capacitor group having a plurality of first capacitor components (580A) as capacitor components, the plurality of first capacitor components being arranged side by side with the upper switch component in an orthogonal direction (RD) orthogonal to the extending direction and in the extending direction; and a second capacitor group (580GB), the second capacitor group having a plurality of second capacitor components (580B) as capacitor components, the plurality of second capacitor components being arranged in parallel with the upper switch component in an orthogonal direction and in an extending direction, The overlapping region extends along the extension direction so as to be provided between the first capacitor group and the second capacitor group.

[0373] [Feature B8] A power conversion device as described in any one of features B1 to B7, wherein: The high potential conductor, the low potential conductor, and the output conductor are each formed in a plate shape and overlapped with each other so that the plate surfaces thereof face each other.

[0374] [Feature B9] A power conversion device as described in any one of features B1 to B8, wherein: The invention comprises a plurality of plate-shaped conductors (601 to 604), wherein the plurality of plate-shaped conductors are conductive and are formed in a plate shape and overlapped with their respective plate surfaces facing each other. The plurality of plate-shaped conductors include a high potential conductor, a low potential conductor and an output conductor, The output conductor is provided between a first plate portion (601) and a second plate portion (602) of the plurality of plate-shaped conductors.

[0375] [Feature B10] A power conversion device as described in feature B9, wherein: The plurality of plate-shaped conductors include a grounding conductor (604) extending in an extending direction along the high potential conductor, the low potential conductor and the output conductor and being grounded, The ground conductor is provided at least one of a pair of outermost positions in the plurality of plate-shaped conductors.

[0376] [Feature B11] A power conversion device as described in any one of features B1 to B10, wherein: There are multiple high potential conductors, multiple low potential conductors and multiple output conductors. The upper switch components are respectively connected to a plurality of high potential conductors and are respectively connected to a plurality of output conductors. The lower switch components are respectively connected to a plurality of output conductors and are respectively connected to a plurality of low potential conductors. The capacitor components are respectively connected to the plurality of high-potential conductors, and are respectively connected to the plurality of low-potential conductors.

[0377] [Feature B12] A power conversion device as described in any one of features B1 to B11, wherein: The invention comprises an upper and lower arm circuit (83), wherein the upper and lower arm circuits are connected between the high potential conductor and the low potential conductor in an electrically conductive manner. The upper switch component has an upper arm switch (86A) included in the upper arm (84) of the upper and lower arm circuits, and the lower switch component has a lower arm switch (86B) included in the lower arm (85) of the upper and lower arm circuits.

[0378] [Feature B13] A power conversion device, wherein the power conversion device (80) converts electric power, wherein the power conversion device comprises: A high potential conductor (601) on the high potential side, the high potential conductor extending in an extension direction (CD) and supplied with power; a low potential conductor (602) on the low potential side, the low potential conductor extending along the high potential conductor in an extending direction and supplied with power; an output conductor (603), the output conductor extending along the high potential conductor and the low potential conductor in an extending direction and used for outputting electric power; an upper switch component (530A) having an upper input terminal (532A) connected to the high potential conductor and an upper output terminal (533A) connected to the output conductor, and performing switching for converting electric power; a lower switch component (530B) having a lower input terminal (532B) connected to the output conductor and a lower output terminal (533B) connected to the low potential conductor, and performing switching for converting electric power; and a capacitor component (580, 580A, 580B), the capacitor component having a high capacitor terminal (582) connected to the high potential conductor and a low capacitor terminal (583) connected to the low potential conductor, and being electrically connected in parallel with the upper switch component and the lower switch component, In the output conductor, the upper output terminal and the lower input terminal are connected to positions separated from each other in the extending direction, The high potential conductor is connected in such a manner that at least one of the upper input terminal and the high capacitor terminal is located between the upper output terminal and the lower input terminal and the upper input terminal and the high capacitor terminal are separated in the extending direction. The low potential conductor is provided so that at least one of the lower output terminal and the low capacitor terminal is located between the upper output terminal and the lower input terminal and the lower output terminal and the low capacitor terminal are separated in the extending direction.

[0379] [Feature B14] A power conversion device, wherein the power conversion device (80) converts electric power, wherein the power conversion device comprises: Power conductors (601, 602), the power conductors extending in an extension direction (CD) and supplied with power; an output conductor (603), the output conductor extending along the power conductor in an extension direction and used for outputting power; An upper switch component (530A) on the high potential side for switching in order to convert electric power; A lower switch component (530B) on the low potential side that switches for converting electric power; and A parallel component (580, 580A, 580B), the parallel component is electrically connected in parallel with the upper switch component and the lower switch component, In the output conductor, the upper switch component and the lower switch component are connected to positions separated from each other in the extending direction in such a manner that the output current (IoA, IoB) flows from the upper switch component toward the lower switch component in the extending direction in the output conductor, In the power conductor, the parallel component and one of the upper switch component and the lower switch component are connected in such a manner that a parallel current (IpA, IpB, InA, InB) flows in the power conductor between the parallel component and one of the upper switch component and the lower switch component in an overlapping area (AO) overlapping with the output current in an extension direction in the power conductor in a direction opposite to the output current.

[0380] [Feature C1] A power conversion device, wherein the power conversion device (80) converts electric power, wherein the power conversion device comprises: A housing (90) having an outer peripheral wall (91) extending in an annular shape; A switch component (530) having power terminals (532, 533) to which electric power is supplied, control terminals (534, 535) for controlling conversion of electric power, and a switch body (531) supporting the power terminals and the control terminals, and performing switching for converting electric power; A power connection object (510) having a power peripheral end (512) extending along the inner peripheral surface (90b) of the peripheral wall and in the circumferential direction (CD) of the peripheral wall and connected to the power terminal in an electrically conductive manner; and A control connection object (550) having a control outer peripheral end (552) extending along the inner peripheral surface and in the circumferential direction and connected to the control terminal in an electrically conductive manner, A plurality of switch components are arranged in a circumferential direction along the power peripheral end and the control peripheral end.

[0381] [Feature C2] In the power conversion device as recited in feature C1, the switch body is provided at a position closer to the power connection object than to the control connection object.

[0382] [Feature C3] A power conversion device as described in feature C1 or C2, wherein: The control terminal has a control connection portion (534ex, 535ex) for connecting the switch body to a control connection object. The power terminal has a power connection portion (532ex, 533ex) which is shorter than the control connection portion and connects the switch body to a power connection object.

[0383] [Feature C4] A power conversion device as described in any one of features C1 to C3, wherein: The power terminal is formed in a folded shape so as to extend from the switch body in a direction away from the power connection target and in a direction approaching the power connection target in the axial direction (AD) of the outer peripheral wall.

[0384] [Feature C5] A power conversion device as described in any one of features C1 to C4, wherein: The power connection object is a power substrate (510) extending in a direction orthogonal to the axial direction (AD) of the outer peripheral wall. The control connection object is an object substrate (550) extending in a direction perpendicular to the axial direction, The power substrate and the target substrate are arranged in the axial direction.

[0385] [Feature C6] In the power conversion device as recited in feature C5, the power terminal is provided at a position away from a middle position between the power substrate and the counterpart substrate in the axial direction toward the power substrate.

[0386] [Feature C7] A power conversion device as described in feature C5 or C6, wherein: The power substrate has power bus bars (601, 602, 603) extending along a control peripheral end which is an outer peripheral end of the power substrate. The power terminal is connected to the power board in an electrically conductive manner by being connected to the power bus bar.

[0387] [Feature C8] A power conversion device as described in any one of features C1 to C7, wherein: The power peripheral end and the control peripheral end extend in a ring shape in the circumferential direction. A switch row (530R) composed of a plurality of switch components arranged in the circumferential direction extends in a ring shape in the circumferential direction.

[0388] [Feature C9] In the power conversion device as described in any one of features C1 to C8, the switch body is provided on the inner peripheral surface.

[0389] [Feature C10] A power conversion device as described in feature C9, wherein: The switch body has, as a pair of plate surfaces, an inner plate surface (531a) facing inward in the radial direction (RD) of the outer peripheral wall and an outer plate surface (531b) facing outward in the radial direction. The heat dissipation from the outer panel surface is greater than the heat dissipation from the inner panel surface.

[0390] [Feature D1] A power conversion device, wherein the power conversion device (80) converts electric power, wherein the power conversion device comprises: A housing (90) having an outer peripheral wall (91) extending in an annular shape; and A heating component (530), wherein a plurality of the heating components are arranged in the circumferential direction (CD) of the outer peripheral wall, are in contact with the inner peripheral surface (90b) of the outer peripheral wall, and generate heat by being energized. The outer peripheral surface (90a) of the outer peripheral wall is a heat dissipation surface that releases heat transferred from the heat generating component to the inner peripheral surface to the outside.

[0391] [Feature D2] A power conversion device as described in feature D1, wherein: It includes a small heat component (524, 580) which is arranged at a position further inside than a heat generating component (530) in the radial direction (RD) of the outer peripheral wall and a plurality of small heat components are arranged in the circumferential direction. The heat generated by energization is smaller than that of the heat generating component.

[0392] [Feature D3] A power conversion device as described in feature D2, wherein: A heat generating component row (530) consisting of a plurality of heat generating components arranged in a circumferential direction extends in a ring shape in the circumferential direction. The small heat component row (524R, 580R) composed of a plurality of small heat components arranged in the circumferential direction extends annularly in the circumferential direction at a position radially inward of the heat generating component row.

[0393] [Feature D4] The power conversion device as described in feature D2 or D3, wherein the power conversion device comprises: A plurality of first small thermal components (580) as small thermal components, the plurality of first small thermal components being arranged in a circumferential direction; and The second small heat component (524) as a small heat component is arranged radially inwardly of the first small heat component, and a plurality of the second small heat components are arranged in the circumferential direction, and the heat generated by energization is smaller than that of the first small heat component.

[0394] [Feature D5] A power conversion device as described in feature D4, wherein: A first component row (580R) consisting of a plurality of first small thermal components arranged in a circumferential direction extends in a ring shape in the circumferential direction. A second component row (524R) composed of a plurality of second small thermal components arranged in the circumferential direction extends annularly in the circumferential direction at a position radially inward of the first component row.

[0395] [Feature D6] A power conversion device as described in any one of features D2 to D5, wherein: The invention comprises a plate member (510) which is arranged at a position away from the inner side of the inner peripheral surface in the radial direction and extends in a plate shape in a direction orthogonal to the axial direction (AD) of the outer peripheral wall. A plurality of small thermal components are secured to the plate member.

[0396] [Feature D7] The power conversion device as described in any one of features D2 to D6, wherein the power conversion device comprises: A heating group (530G), the heating group having a plurality of heating components arranged in a circumferential direction, and a plurality of heating components arranged in the circumferential direction; and As a group arrangement component (580c) of small heat components, the above-mentioned group arrangement component is arranged at a position parallel to the heat generation group in the radial direction.

[0397] [Feature D8] The power conversion device as described in any one of features D2 to D7, wherein the power conversion device comprises: A dense area (Asw1), wherein a plurality of the dense areas are arranged in a circumferential direction and a plurality of heat generating components are densely arranged; A middle area (Asw2), wherein no heat generating components are arranged in the middle area, a plurality of heat generating components are arranged in the circumferential direction, and the heat generating components are arranged between two circumferentially adjacent dense areas; an external connector (96) disposed in a middle region of the outer peripheral wall and used to connect the heat generating component to an external device (31) in an electrically conductive manner; and A connector arranging component (524b) as a small thermal component is arranged at a position parallel to the external connector in the radial direction.

[0398] [Feature D9] A power conversion device as described in any one of features D1 to D8, wherein: The heat generating component has a plate-shaped component body (531) and component terminals (532-535) extending from the component body, and contacts the outer peripheral wall in a state where the outer plate surface (531b) of the component body overlaps with the inner peripheral surface.

[0399] [Feature D10] A power conversion device as described in feature D9, wherein, in the component body, heat dissipation from the outer plate surface is greater than heat dissipation from the inner plate surface (531a) facing the opposite side to the outer plate surface.

[0400] [Feature D11] The power conversion device as described in feature D9 or D10, wherein the power conversion device comprises: a connecting substrate (510, 550) to which component terminals are connected; and A substrate support part (500) is fixed to the outer peripheral wall and supports the connection substrate. In the heat generating component, the heat of the component body is released from the outer peripheral surface to the outside via the outer peripheral wall, and the heat of the component terminals is released from the outer peripheral surface to the outside via the connection substrate, the substrate support portion, and the outer peripheral wall.

Claims

1. A power conversion device, the power conversion device (80) converts electric power, the power conversion device comprising: A housing (90) having an outer peripheral wall (91) extending in an annular shape; a plurality of beam portions (501), the plurality of beam portions extending from the outer peripheral wall toward the inner side in the radial direction (RD) of the outer peripheral wall, and a plurality of beam portions arranged in the circumferential direction (CD) of the outer peripheral wall; a plate member (510, 550) extending in a plate shape in a direction orthogonal to the axial direction (AD) of the outer peripheral wall and fixed to the plurality of beam portions in a state of being bridged over the plurality of beam portions; and A mounting component (146, 147, 525-528, 580) is energizable and mounted on the plate member.

2. The power conversion device according to claim 1, characterized in that: The power conversion device comprises: a first plate member (510) as the plate member, the first plate member being disposed on one side of the beam portion in the axial direction; and A second plate member (550) as the plate member is provided on the opposite side to the first plate member across the beam portion in the axial direction.

3. The power conversion device according to claim 2, characterized in that: The first plate member is a high voltage substrate (510) to which a high voltage is applied, The second plate member is a low voltage substrate (550) to which a low voltage lower than the high voltage is applied.

4. The power conversion device according to any one of claims 1 to 3, characterized in that: A switch component (530) is provided, wherein the switch component has a switching switch (86) for switching the electric power, and a plurality of the switching switches are arranged in the circumferential direction along the outer peripheral end (512, 552) of the plate member and fixed to the inner peripheral surface (90b) of the outer peripheral wall.

5. The power conversion device according to claim 4, characterized in that: A switch group (539) is included, the switch group having a plurality of switch components arranged in the circumferential direction, and a plurality of switch components are arranged in the circumferential direction along the outer peripheral end of the plate member, The beam portion extends inward from the outer peripheral wall between two of the switch groups adjacent to each other in the circumferential direction.

6. The power conversion device according to claim 4, characterized in that: The switch component comprises: a switch body (531) having the conversion switch; and switch terminals (532-535) extending from the switch body, The switch body is disposed at a position away from the beam portion and the plate member.

7. The power conversion device according to claim 4, characterized in that: comprising heat dissipation fins (92), the heat dissipation fins extending from the outer peripheral wall toward the radial outer side and releasing heat to the outside, The switch component is disposed at a position parallel to the heat dissipation fins in the radial direction.

8. The power conversion device according to claim 1, characterized in that: A beam connection portion (502) is included, which is provided at a position away from the outer peripheral wall toward the inner side in the radial direction and connects a plurality of the beam portions.

9. The power conversion device according to claim 8, characterized in that: The beam connection portion extends annularly in the circumferential direction.

10. The power conversion device according to claim 1, wherein: The beam portion and the outer peripheral wall are capable of transferring heat.

11. The power conversion device according to claim 1, wherein: The beam portion is in conduction with the outer peripheral wall.

12. A rotating motor unit, the rotating motor unit (50) being driven by supply of electric power, the rotating motor unit comprising: A rotating electric machine (60) comprising a rotor (300) and a stator (200); as well as a power conversion device (80) for converting the power supplied to the rotating electric machine, The power conversion device comprises: a housing (90) having an outer peripheral wall (91) extending in an annular shape and fixed to the rotating electrical machine; a plurality of beam portions (501), the plurality of beam portions extending from the outer peripheral wall toward the inner side in the radial direction (RD) of the outer peripheral wall, and a plurality of beam portions arranged in the circumferential direction (CD) of the outer peripheral wall; a plate member (510, 550) extending in a plate shape in a direction orthogonal to the axial direction (AD) of the outer peripheral wall and fixed to the plurality of beam portions in a state of being bridged over the plurality of beam portions; and A mounting component (146, 147, 525-528, 580) is energizable and mounted on the plate member.

13. The rotating electrical machine unit according to claim 12, characterized in that In the power conversion device, the outer peripheral wall is a device outer peripheral wall (91), The rotating electrical machine comprises: a motor outer peripheral wall (71), the motor outer peripheral wall extending in an annular shape, accommodating the rotor and the stator, and arranged side by side with the device outer peripheral wall in the axial direction; and a cover (62) fixed to the outer peripheral wall of the motor and covering the rotor and the stator from the outer peripheral wall side of the device, The power conversion device includes a heat insulating portion (545) which is provided between the plate member and the cover portion, extends along the cover portion, and has heat insulating properties.

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