Magnetron sputtering device and magnetron sputtering method

Abstract

The invention provides a magnetron sputtering device and a magnetron sputtering method, belonging to the technical field of material preparation and processing. The magnetron sputtering device comprises a base, a substrate heating device located on the base and a magnetron sputtering device located on the substrate heating device. The magnetron sputtering device comprises a coating chamber, a vacuum chamber, a magnetic field generating device and a sputtering cathode cooling device which are arranged in sequence from bottom to top. The sputtering cathode cooling device comprises a cooling chamber, a water inlet pipe located at the left end of the cooling chamber, a water outlet pipe located at the right end of the cooling chamber, a temperature sensor for detecting the temperature of cooling water in the water outlet pipe and a regulating component for regulating the water flow in the cooling chamber. One end of the water outlet pipe is connected with the cooling chamber and is used for introducing the water in the cooling chamber into the coating chamber for cooling it. The circulating cooling water flow can be regulated so that the water has a more appropriate contact time with the sputtering cathode, so that the device can achieve a better cooling effect and avoid wasting resources.

Description

Technical Field

[0001] The invention belongs to the technical field of material preparation and processing, and specifically relates to a magnetron sputtering device and a magnetron sputtering method. Background Art

[0002] Magnetron sputtering is a coating technology that introduces a magnetic field on the target cathode surface and uses the magnetic field to constrain charged particles to increase plasma density and increase the sputtering rate. It is mainly used to prepare multi-material films such as metals, semiconductors, and insulators. During magnetron sputtering, the ion beam bombarding the target surface will generate a lot of heat, which will cause the equipment to overheat, thereby affecting the stability of the equipment and the quality of the sputtering coating. Therefore, magnetron sputtering equipment usually uses circulating cooling water to reduce the temperature of the equipment.

[0003] A Chinese patent with authorization announcement number CN106854752B discloses a magnetron sputtering device, which includes a process chamber, a target material, a target material back plate, a magnetron and a cooling chamber, wherein the cooling chamber is located above the process chamber, and the target material back plate is arranged between the cooling chamber and the process chamber to isolate the two from each other, and the target material back plate is cooled by introducing a cooling medium into the cooling chamber; the target material is arranged on the lower surface of the target material back plate, the magnetron is arranged in the cooling chamber, and the upper surface of the target material back plate is covered with a heat-conducting insulating member to electrically insulate the target material back plate from the cooling chamber and the cooling medium therein.

[0004] When the magnetron sputtering equipment is cooled, circulating cooling water is passed into the sputtering mechanism and the vacuum chamber in turn to cool the sputtering target cathode and the substrate respectively. Since the cooling speed of the substrate needs to be guaranteed when the substrate is cooled, too low a cooling water temperature will cause the temperature to drop too quickly, causing the adhesion between the film layer and the substrate to decrease, thereby causing peeling, and also forming defects on the surface of the substrate, such as cracks, bubbles, etc. If the cooling water temperature is too high, it will cause excessive temperature shock to the substrate.

[0005] Existing equipment is unable to adjust the flow rate of circulating cooling water so that the water and the sputtering cathode have a more appropriate contact time. If the contact time is long, it cannot achieve a good cooling effect. If the contact time is short, the water resources are not fully utilized, which easily leads to waste of resources. It also makes it impossible to ensure that the temperature of the water after the sputtering cathode is cooled is within a reasonable range, thereby affecting the cooling of the substrate. Summary of the invention

[0006] The object of the present invention is to provide a magnetron sputtering device and a magnetron sputtering method, aiming to solve the problem in the prior art that the flow rate of circulating cooling water cannot be adjusted so that the water and the sputtering cathode have a more appropriate contact time, thereby failing to ensure the cooling effect on the sputtering cathode.

[0007] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a magnetron sputtering device, comprising a base, a substrate heating device located on the base and a magnetron sputtering device located on the substrate heating device, the magnetron sputtering device comprising a coating chamber, a vacuum chamber, a magnetic field generating device and a sputtering cathode cooling device arranged in sequence from bottom to top, the sputtering cathode cooling device comprising a cooling chamber, a water inlet pipe located at the left end of the cooling chamber, a water outlet pipe located at the right end of the cooling chamber, a temperature sensor for detecting the temperature of cooling water in the water outlet pipe and a regulating component for regulating the water flow in the cooling chamber, one end of the water outlet pipe is connected to the cooling chamber, and the other end is connected to the coating chamber, and is used to introduce water in the cooling chamber into the coating chamber to cool it.

[0008] The adjustment component includes a control box located at the right end of the cooling chamber and connected to the cooling chamber, and an adjustment plate located in the cooling chamber and sliding along the up and down directions. The right side of the adjustment plate is an inclined surface that gradually inclines from top to bottom to the right. The control box is slidably sleeved with an adjustment block along the left and right directions. The left side of the adjustment block is an inclined surface that inclines from bottom to top to the left. The inclined surface of the adjustment block and the inclined surface of the adjustment plate conflict with each other, and a telescopic rod is provided between the right side of the adjustment block and the inner wall of the control box.

[0009] The effect is that the flow rate of cooling water inside the cooling chamber is regulated by controlling the rise and fall of the adjustment plate. When the adjustment plate rises, the flow rate of cooling water inside the cooling chamber is reduced, thereby reducing the heat exchange efficiency between the cooling water and the sputtering cathode, and the temperature of the cooling water after the heat exchange increases. Conversely, when the adjustment plate descends, the flow rate of cooling water inside the cooling chamber is accelerated, thereby increasing the heat exchange efficiency between the cooling water and the sputtering cathode, and reducing the temperature of the cooling water after the heat exchange. The circulating cooling water flow rate can be adjusted so that the water and the sputtering cathode have a more appropriate contact time, so that the device can not only have a better cooling effect, but also avoid wasting resources. At the same time, it can also ensure the temperature of the cooling water entering the coating chamber, so that the temperature of the cooling water used to cool the coating chamber can be guaranteed to be within a reasonable range, thereby avoiding the cooling of the substrate due to temperature instability during cooling.

[0010] The bottom of the water inlet pipe and the water outlet pipe is flush with the bottom of the cooling chamber, the bottom of the adjustment plate is higher than the top of the water inlet pipe and the water outlet pipe, the side wall of the adjustment plate is in conflict with the inner wall of the cooling chamber, and the control box is located above the water outlet pipe.

[0011] The effect is that the adjustment plate and the control box are arranged above the water inlet pipe and the water outlet pipe, which ensures that the flow of cooling water inside the cooling chamber can be smoothly adjusted when the adjustment plate rises and falls.

[0012] The coating chamber includes a shell fixedly installed on the top of the substrate heating device, a heat exchange tube located inside the shell, and a substrate support assembly used to support the substrate during magnetron sputtering coating. A channel hole is provided on the front side of the shell, and the substrate support assembly enters the shell through the channel hole. The heat exchange tube is a U-shaped tube and the two side walls of the U-shaped tube are respectively located at the top and bottom of the channel hole. The heat exchange tube is used to cool the substrate after sputtering coating.

[0013] The coating chamber also includes a cooling water pipe located on the top right side of the substrate heating device. A partition is installed inside the heat exchange tube, which separates the heat exchange tube into two non-interconnected channels. The water outlet pipe is connected to one end of one of the channels in the heat exchange tube away from the channel hole, and the cooling water pipe is connected to one end of the other channel in the heat exchange tube.

[0014] The effect is that the substrate can be pre-cooled by cooling water that has passed through the sputtering cathode cooling device, and the cooling of the substrate is divided into two steps by using the water that has passed through the sputtering cathode cooling device to pre-cool the substrate and using the cooling water that has not passed through the sputtering cathode cooling device to thoroughly cool the substrate, thereby avoiding excessive temperature changes on the substrate, resulting in uneven temperature distribution inside the material, causing thermal stress, and increasing the risk of cracks or deformation.

[0015] There are two channel holes and two substrate support assemblies, the two channel holes are symmetrically arranged on the left and right, and the two substrate support assemblies are slidably installed in the two channel holes respectively. The substrate support assembly includes a carrying plate, a bracket located on the carrying plate and used to support the substrate, two clamping plates located on the bracket and used to clamp the substrate, and a connecting rod installed on one side of the carrying plate. The left and right ends of the bracket are provided with upwardly extended extension parts, and the two extension parts are respectively installed with telescopic parts that drive the two clamping plates to move in the left and right directions. A sealing plate extending in the left and right directions is installed at one end of the top of the carrying plate close to the connecting rod, and a baffle extending in the left and right directions is provided on the side of the bracket away from the connecting rod.

[0016] The effect is that by setting up two groups of substrate support assemblies, when the substrates on one group of substrate support assemblies are cooled after sputtering coating, the substrates on the other group of substrate support assemblies can continue to be sputtered coated, so that the equipment can continuously cool down the substrates, avoiding the idleness of the equipment when the substrates are cooled, and improving the use efficiency of the equipment.

[0017] A driving assembly for driving the bracket to move left and right along the supporting plate is also provided in the shell. An elastic member for resetting the bracket after movement is installed on the sealing plate. One end of the elastic member is fixedly connected to the sealing plate, and the other end is fixedly connected to the bracket. A transmission block for cooperating with the driving assembly for transmission is installed on the baffle. The driving assembly includes a double-headed screw extending along the left and right directions of the shell and rotatably installed on the inner walls on both sides thereof, and two sliders threadedly sleeved on both ends of the double-headed screw. The bottom of the slider is in conflict with the top of the magnetron sputtering control device. One end of the double-headed screw extends out of the shell and is installed with a handwheel.

[0018] A card slot is provided at the top of the connecting rod, and two locking mechanisms are installed on the front outer wall of the shell, respectively located above the two channel holes. The locking mechanism includes a fixed block fixedly installed on the shell, and a card plate is slidably installed on the top of the fixed block for cooperating with the card slot to lock the movement of the carrier plate.

[0019] The effect is that by setting up a driving assembly, the substrate on the substrate support assembly can be moved to the center of the coating chamber, so that the substrate is located at the center of the sputtering anode and the sputtering cathode, ensuring the efficiency of the sputtering coating of the equipment.

[0020] A magnetron sputtering control device is installed on the base for controlling the sputtering process. The base includes a flat plate for installing the substrate heating device and the magnetron sputtering control device. The bottom of the flat plate is equipped with four legs for supporting it, which are respectively located at the four corners of the flat plate.

[0021] Also included is a magnetron sputtering method, the magnetron sputtering method is as follows:

[0022] First, place the prepared substrate into the coating chamber, install the sputtering target on the sputtering cathode on the top of the magnetic field generating device, evacuate the coating chamber and the vacuum chamber and fill them with inert gas argon, start the magnetic field generating device, apply negative high voltage between the target and the substrate, and start the sputtering cathode cooling device to cool the sputtering equipment.

[0023] Compared with the prior art, the present invention has the following beneficial effects:

[0024] 1. The flow rate of circulating cooling water can be adjusted so that the water and the sputtering cathode have a more appropriate contact time, so that the device can not only achieve a better cooling effect, but also avoid waste of resources. At the same time, it can also ensure the temperature of the cooling water entering the coating chamber, so that the temperature of the cooling water used to cool the coating chamber can be guaranteed to be within a reasonable range, thereby avoiding the cooling of the substrate affected by temperature instability during cooling.

[0025] 2. The substrate can be pre-cooled by cooling water that has passed through a sputtering cathode cooling device. The cooling of the substrate is divided into two steps by using the water that has passed through the sputtering cathode cooling device to pre-cool the substrate and using the cooling water that has not passed through the sputtering cathode cooling device to completely cool the substrate, thereby preventing the substrate from being subjected to excessive temperature changes, resulting in uneven temperature distribution inside the material, thereby causing thermal stress and increasing the risk of cracks or deformation. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0027] Figure 1 It is a schematic structural diagram of the magnetron sputtering equipment in the present invention;

[0028] Figure 2 It is a schematic structural diagram of the magnetron sputtering device in the present invention;

[0029] Figure 3 It is a structural schematic diagram of the sputtering cathode cooling mechanism in the present invention;

[0030] Figure 4 It is a schematic diagram of the top cross-sectional structure of the vacuum chamber in the present invention;

[0031] Figure 5 It is a schematic diagram of the side cross-sectional structure of the vacuum chamber in the present invention;

[0032] Figure 6 It is a schematic structural diagram of the substrate support assembly in the present invention.

[0033] In the figure: 1, substrate heating device; 2, magnetron sputtering device; 21, coating chamber; 211, shell; 212, channel hole; 213, heat exchange tube; 2131, partition; 214, cooling water pipe; 215, substrate support assembly; 2151, bearing plate; 21511, limit slide; 2152, bracket; 2153, baffle; 2154, clamping plate; 2155, transmission block; 2156, sealing plate; 2157, connecting rod; 2158, slot; 2 159. Elastic member; 216. Driving assembly; 2161. Double-headed screw; 2162. Sliding block; 217. Locking mechanism; 22. Vacuum chamber; 23. Magnetic field generating device; 24. Sputtering cathode cooling device; 241. Cooling chamber; 242. Water inlet pipe; 243. Water outlet pipe; 244. Adjusting assembly; 2441. Control box; 2442. Adjusting plate; 2443. Adjusting block; 2444. Telescopic rod; 25. Fixing member; 3. Magnetron sputtering control device. DETAILED DESCRIPTION

[0034] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] See also Figure 1-Figure 6 The present invention provides the following technical solution: a magnetron sputtering device, comprising a base, a substrate heating device 1 located on the base, a magnetron sputtering device 2 located on the substrate heating device 1, and a magnetron sputtering control device 3 located on the base.

[0036] refer to Figure 1 As shown, the base includes a flat plate for mounting a substrate heating device 1 and a magnetron sputtering control device 3, and legs for supporting the flat plate are mounted at the bottom thereof. There are four legs, which are located at the four corners of the flat plate. In other embodiments, the number of legs may be other numbers.

[0037] The substrate heating device 1 is installed on the top left side of the flat plate. A sputtering anode is installed on the top of the substrate heating device 1. The substrate heating device 1 provides appropriate heat during the magnetron sputtering process to make the substrate reach a certain temperature.

[0038] refer to Figure 2 As shown, the magnetron sputtering device 2 includes a coating chamber 21, a vacuum chamber 22, a magnetic field generating device 23, a sputtering cathode cooling device 24 and a fixing member 25 which are arranged in sequence from bottom to top.

[0039] refer to Figure 4-Figure 6 As shown, the coating chamber 21 includes a shell 211 , a heat exchange tube 213 , a cooling water pipe 214 located on the top right side of the substrate heating device 1 , a substrate support assembly 215 , a drive assembly 216 and a locking mechanism 217 .

[0040] The shell 211 is fixedly installed on the top of the substrate heating device 1. The front side wall of the shell 211 is provided with a channel hole 212. The substrate support assembly 215 enters the shell 211 through the channel hole 212. There are two channel holes 212 and they are symmetrical to each other. By setting up two channel holes 212, the device can alternately sputter and coat two substrates, avoiding the device being in an idle state when the substrate is cooled down, thereby improving the processing efficiency of the equipment.

[0041] The heat exchange tube 213 is located inside the shell 211. The heat exchange tube 213 is a U-shaped tube and the two side walls of the U-shaped tube are respectively located at the top and bottom of the channel hole 212. A partition 2131 is installed inside the heat exchange tube 213. The partition 2131 separates the heat exchange tube 213 into two non-interconnected channels. The sputtering cathode cooling device 24 is connected to one end of the channel in the heat exchange tube 213 away from the channel hole 212, and the cooling water pipe 214 is connected to one end of the other channel in the heat exchange tube 213. By dividing the inside of the heat exchange tube 213 into two channels, the heat exchange tube 213 can perform pre-cooling and final cooling on the substrate, and the cooling of the substrate is divided into two steps, which avoids directly cooling the substrate so that the substrate is subjected to excessive temperature changes, thereby causing thermal stress and increasing the risk of cracks or deformation.

[0042] There are two substrate support assemblies 215, and the two substrate support assemblies 215 are slidably installed in the two channel holes 212 respectively. The substrate support assembly 215 includes a supporting plate 2151, a bracket 2152 located on the supporting plate 2151 and used to support the substrate, two clamping plates 2154 located on the bracket 2152 and used to clamp the substrate, a connecting rod 2157 installed on one side of the supporting plate 2151, and an elastic member 2159.

[0043] A limiting groove 21511 extending in the left-right direction and used to limit the bracket 2152 is provided on the supporting plate 2151. A sealing plate 2156 extending in the left-right direction is installed at one end of the top of the supporting plate 2151 close to the connecting rod 2157. The sealing plate 2156 is used to seal the channel hole 212 when the substrate is sputtered and coated, so as to maintain the vacuum degree of the coating chamber 21 and the vacuum chamber 22 and prevent the leakage of the inert gas therein.

[0044] The bracket 2152 slides in the limiting slide groove 21511 on the supporting plate 2151, and a baffle 2153 extending in the left-right direction is provided on the side of the bracket 2152 away from the connecting rod 2157, and a transmission block 2155 for cooperating with the driving assembly 216 for transmission is installed on the baffle 2153, and the left and right ends of the bracket 2152 are provided with upwardly extended extension parts, and the two extension parts are installed with telescopic parts that respectively drive the two clamping plates 2154 to move in the left-right direction and clamp the substrate, so that the substrate on the substrate support assembly 215 can be moved to the center of the coating chamber 21, so that the substrate is located at the center of the sputtering anode and the sputtering cathode, thereby ensuring the efficiency and effect of the sputtering coating of the equipment.

[0045] A slot 2158 is defined at the top of the connecting rod 2157 .

[0046] One end of the elastic member 2159 is fixedly connected to the sealing plate 2156, and the other end is fixedly connected to the bracket 2152. The elastic member 2159 is a spring, which can drive the bracket 2152 moved to the center of the coating chamber 21 to reset, so that the bracket 2152 is re-positioned on the supporting plate 2151, making it convenient for the supporting plate 2151 to drive the substrate to the heat exchange tube 213 for cooling.

[0047] The driving assembly 216 includes a double-headed screw 2161 extending along the left and right directions of the shell 211 and rotatably installed on the inner walls on both sides thereof, and two sliders 2162 threadedly sleeved on both ends of the double-headed screw 2161, the bottom of the slider 2162 is in conflict with the top of the magnetron sputtering control device 3, and one end of the double-headed screw 2161 extends out of the shell 211 and is equipped with a handwheel.

[0048] There are two locking mechanisms 217, which are respectively located above the two channel holes 212. The locking mechanism 217 includes a fixed block fixedly installed on the shell 211. A card plate is slidably installed on the top of the fixed block for cooperating with the card slot 2158 to lock the movement of the carrier plate 2151. The substrate support assembly 215 can be fixed to prevent the substrate support assembly 215 from moving during sputtering coating of the substrate, resulting in deviation in the position of the substrate and affecting the sputtering coating effect of the substrate.

[0049] refer to Figure 2 and Figure 3 As shown, the sputtering cathode cooling device 24 includes a cooling chamber 241, a water inlet pipe 242, a water outlet pipe 243, a temperature sensor for detecting the temperature of cooling water in the water outlet pipe 243, and a regulating component 244 for regulating the water flow in the cooling chamber 241.

[0050] One end of the water inlet pipe 242 is installed at the left end of the cooling chamber 241 and is connected to the interior of the cooling chamber 241. The bottom of the water inlet pipe 242 is flush with the bottom of the cooling chamber 241. The other end of the water inlet pipe 242 is connected to the water supply device.

[0051] One end of the water outlet pipe 243 is installed at the right end of the cooling chamber 241 and communicates with the interior of the cooling chamber 241 . The bottom of the water outlet pipe 243 is flush with the bottom of the cooling chamber 241 . The other end of the water outlet pipe 243 is communicated with the heat exchange pipe 213 .

[0052] The regulating assembly 244 includes a control box 2441 located at the right end of the cooling chamber 241, an regulating plate 2442 located in the cooling chamber 241 and sliding in the up and down directions, an regulating block 2443 located in the control box 2441, and a telescopic rod 2444. The flow rate of cooling water in the cooling chamber 241 is adjusted by controlling the rise and fall of the regulating plate 2442. When the regulating plate 2442 rises, the flow rate of cooling water in the cooling chamber 241 is reduced, thereby reducing the heat exchange efficiency between the cooling water and the sputtering cathode, and increasing the temperature of the cooling water after the heat exchange. Conversely, when the regulating plate 2442 falls, the flow rate of cooling water in the cooling chamber 241 is accelerated, thereby increasing the heat exchange efficiency between the cooling water and the sputtering cathode, and reducing the temperature of the cooling water after the heat exchange. The circulating cooling water flow rate can be adjusted so that the water and the sputtering cathode have a more appropriate contact time, so that the device can not only achieve a better cooling effect, but also avoid wasting resources.

[0053] The control box 2441 is located above the water outlet pipe 243 and is connected to the cooling chamber 241 .

[0054] The bottom of the adjusting plate 2442 is higher than the top of the water inlet pipe 242 and the water outlet pipe 243, the four side walls of the adjusting plate 2442 are respectively in contact with the four inner walls of the cooling chamber 241, and the right side of the adjusting plate 2442 is an inclined surface that gradually tilts from top to bottom and to the right.

[0055] The adjustment block 2443 is slidably sleeved in the control box 2441 along the left and right directions of the control box 2441 . The left side of the adjustment block 2443 is an inclined surface that tilts from bottom to top and to the left. The inclined surface of the adjustment block 2443 and the inclined surface of the adjustment plate 2442 conflict with each other.

[0056] The telescopic rod 2444 is installed between the right side of the adjustment block 2443 and the inner wall of the control box 2441. The telescopic rod 2444 is an electric telescopic rod, and in other embodiments it can also be a pneumatic telescopic rod, which can drive the adjustment block 2443 to move left and right, and then adjust the height of the adjustment plate 2442 by the cooperation between the inclined surface of the adjustment block 2443 and the inclined surface of the adjustment plate 2442. When the adjustment block 2443 moves to the left, the adjustment plate 2442 begins to descend under the cooperation of the inclined surface of the adjustment block 2443 and the inclined surface of the adjustment plate 2442. When the adjustment block 2443 moves to the right, the inclined surface of the adjustment block 2443 forms pressure on the inclined surface of the adjustment plate 2442. At this time, the adjustment plate 2442 begins to rise under the pressure of the water flow, thereby completing the adjustment of the circulating cooling water flow rate, so that the cooling effect of the sputtering cathode cooling device 24 is optimized.

[0057] The fixing part 25 is an L-shaped plate, one end of the fixing part 25 is fixedly installed on the top of the substrate heating device 1, and the other end of the fixing part 25 is fixedly installed on the top of the sputtering cathode cooling device 24, which can reinforce the coating chamber 21, the vacuum chamber 22, the magnetic field generating device 23 and the sputtering cathode cooling device 24.

[0058] refer to Figure 1 As shown, the magnetron sputtering control device 3 is installed on the top right side of the flat plate, and is used to control parameters such as the electric field, magnetic field, and sputtering source during the magnetron sputtering process. The magnetron sputtering control device 3 achieves stability and efficiency of the sputtering process by precisely regulating parameters such as the electric field, magnetic field, and sputtering source, and achieves control of the sputtering rate, uniformity of the film thickness, and optimization of the film quality.

[0059] The implementation principle of the embodiment of the present invention is:

[0060] When the equipment is working, the pretreated substrate is placed on the bracket 2152, and the telescopic part is started to drive the two clamping plates 2154 to clamp the substrate. The supporting plate 2151 is pushed into the coating chamber 21 through the channel hole 212 by the connecting rod 2157, and then the clamping plate is pressed down to make its bottom slide into the clamping groove 2158 on the connecting rod 2157, thereby locking the movement of the supporting plate 2151, and the hand wheel is turned to drive the double-headed screw 2161 to rotate. Since the slider 2162 is threadedly connected to the double-headed screw 2161 and the bottom of the slider 2162 is in conflict with the top of the magnetron sputtering control device 3, as the double-headed screw 2161 rotates, the slider 2162 slides along the axial direction of the double-headed screw 2161, and drives the bracket 2152 to move toward the center of the coating chamber 21 through the transmission block 2155.

[0061] The coating chamber 21 and the vacuum chamber 22 are evacuated and filled with inert gas argon, the magnetic field generating device 23 is started, and negative high voltage is applied between the target material and the substrate, and the substrate heating device 1 is started to heat the coating chamber 21 to make the substrate reach a certain temperature.

[0062] At the same time, the sputtering cathode cooling device 24 is started, and the water supply device discharges the cooled water into the cooling chamber 241 through the water inlet pipe 242. At this time, the cooling water performs heat exchange with the sputtering cathode in the cooling chamber 241, thereby cooling the sputtering cathode to prevent its temperature from being too high. As the cooling water flows, the cooling water after heat exchange in the cooling chamber 241 flows into the water outlet pipe 243. The temperature sensor detects the temperature of the cooling water entering the water outlet pipe 243. When it is detected that the temperature of the cooling water is lower than the set temperature range, the telescopic end of the telescopic rod 2444 is controlled to be pushed out, so that the telescopic rod 2444 drives the adjustment block 2443 to move left. The adjustment block 2443 drives the adjustment plate 2442 to move downward under the cooperation of its own inclined surface and the inclined surface of the adjustment plate 2442. The space filled with cooling water in the cooling chamber 241 is reduced, thereby reducing the flow rate of cooling water therein, and further reducing the heat exchange efficiency between the cooling water and the sputtering cathode, increasing the temperature of the cooling water after the heat exchange, and controlling it within the set temperature range; when it is detected that the temperature of the cooling water is higher than the set temperature range, the telescopic end of the telescopic rod 2444 is controlled to be retracted, so that the telescopic rod 2444 drives the adjustment block 2443 to move right, and the adjustment block 2443 rises under the pressure of the cooling water entering the cooling chamber 241, so that the space filled with cooling water in the cooling chamber 241 is increased, thereby increasing the flow rate of cooling water therein, and further increasing the heat exchange efficiency between the cooling water and the sputtering cathode, so that the temperature of the cooling water after the heat exchange is reduced, and it is controlled within the set temperature range. By adjusting the flow rate of circulating cooling water, the water and the sputtering cathode have a more appropriate contact time, so that the device can not only achieve a better cooling effect, but also avoid wasting resources. At the same time, it can also ensure the temperature of the cooling water entering the coating chamber 21, so that the temperature of the cooling water used to cool the coating chamber 21 can be guaranteed to be within a reasonable range, thereby avoiding the cooling of the substrate affected by temperature instability during cooling.

[0063] The cooling water in the water outlet pipe 243 enters one of the channels in the heat exchange tube 213, and the cooling water pipe 214 discharges the cooling water that has not passed through the sputtering cathode cooling device 24 into another channel in the heat exchange tube 213. When the sputtering coating of the substrate on one of the substrate support assemblies 215 is completed, the substrate support assembly 215 is pulled out so that the substrate is located below the channel connecting the heat exchange tube 213 and the water outlet pipe 243, and the sealing plate 2156 is just located below the baffle 2153. The other substrate support assembly 215 is pushed into the coating chamber 21 for sputtering coating. At this time, the cooling water that has passed through the sputtering cathode cooling device 24 pre-cools the substrate that has been sputtered. After pre-cooling, the substrate support assembly 215 is pulled out again so that it is located below another channel of the heat exchange tube 213. At this time, the cooling water that has not passed through the sputtering cathode cooling device 24 thoroughly cools the substrate. By using the water used to cool the sputtering cathode to pre-cool the substrate, the substrate is prevented from being subjected to excessive temperature changes, resulting in uneven temperature distribution inside the material, causing thermal stress and increasing the risk of cracks or deformation.

[0064] Also included is a magnetron sputtering method, the magnetron sputtering method is as follows:

[0065] First, place the prepared substrate on the bracket 2152, and put the substrate into the coating chamber 21 through the substrate support assembly 215, install the sputtering target on the sputtering cathode on the top of the magnetic field generating device 23, then evacuate the coating chamber 21 and the vacuum chamber 22 and fill them with inert gas argon, start the magnetic field generating device 23, apply negative high voltage between the target and the substrate, and start the sputtering cathode cooling device 24 to cool the sputtering equipment.

[0066] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A magnetron sputtering device, comprising a base, a substrate heating device (1) located on the base, and a magnetron sputtering device (2) located on the substrate heating device (1), wherein the magnetron sputtering device (2) comprises a coating chamber (21), a vacuum chamber (22), a magnetic field generating device (23), and a sputtering cathode cooling device (24) arranged in sequence from bottom to top, characterized in that: The sputtering cathode cooling device (24) comprises a cooling chamber (241), a water inlet pipe (242) located at the left end of the cooling chamber (241), a water outlet pipe (243) located at the right end of the cooling chamber (241), a temperature sensor for detecting the temperature of cooling water in the water outlet pipe (243), and a regulating component (244) for regulating the water flow in the cooling chamber (241); one end of the water outlet pipe (243) is in communication with the cooling chamber (241), and the other end is in communication with the coating chamber (21), and is used to guide water in the cooling chamber (241) into the coating chamber (21) to cool it; The coating chamber (21) comprises a shell (211) fixedly mounted on the top of the substrate heating device (1), a heat exchange tube (213) located inside the shell (211), and a substrate support assembly (215) used to support the substrate during magnetron sputtering coating. A channel hole (212) is provided on the front side of the shell (211), and the substrate support assembly (215) passes through the channel hole (212) and enters the shell (211). The heat exchange tube (213) is a U-shaped tube, and the two side walls of the U-shaped tube are respectively located at the top and bottom of the channel hole (212). The heat exchange tube (213) is used to cool the substrate after sputtering coating. There are two channel holes (212) and two substrate support assemblies (215), the two channel holes (212) are symmetrically arranged, the two substrate support assemblies (215) are slidably installed in the two channel holes (212), and the substrate support assembly (215) comprises a carrier plate (2151), a bracket (2152) located on the carrier plate (2151) and used to support the substrate, two clamping plates (2154) located on the bracket (2152) and used to clamp the substrate, and a substrate support assembly (2155) installed on the carrier plate (2151). 151), the left and right ends of the bracket (2152) are both provided with extension parts extending upwards, and the two extension parts are both installed with telescopic parts respectively driving the two clamping plates (2154) to move in the left and right directions, and the top of the load-bearing plate (2151) is provided with a sealing plate (2156) extending in the left and right directions at one end close to the connecting rod (2157), and the side of the bracket (2152) away from the connecting rod (2157) is provided with a baffle (2153) extending in the left and right directions; The adjustment component (244) comprises a control box (2441) located at the right end of the cooling chamber (241) and connected to the cooling chamber (241), and an adjustment plate (2442) located in the cooling chamber (241) and sliding in the up-down direction, the right side of the adjustment plate (2442) being an inclined surface gradually tilted from top to bottom to the right, the control box (2441) being slidably sleeved with an adjustment block (2443) in the left-right direction, the left side of the adjustment block (2443) being an inclined surface tilted from bottom to top to the left, the inclined surface of the adjustment block (2443) and the inclined surface of the adjustment plate (2442) being in contact with each other, and a telescopic rod (2444) being provided between the right side of the adjustment block (2443) and the inner wall of the control box (2441).

2. A magnetron sputtering device according to claim 1, characterized in that: The bottoms of the water inlet pipe (242) and the water outlet pipe (243) are flush with the bottom of the cooling chamber (241); the bottom of the adjustment plate (2442) is higher than the tops of the water inlet pipe (242) and the water outlet pipe (243); the side wall of the adjustment plate (2442) is in contact with the inner wall of the cooling chamber (241); and the control box (2441) is located above the water outlet pipe (243).

3. A magnetron sputtering device according to claim 1, characterized in that: The coating chamber (21) further comprises a cooling water pipe (214) located on the top right side of the substrate heating device (1); a partition (2131) is installed inside the heat exchange tube (213); the partition (2131) separates the heat exchange tube (213) into two non-interconnected channels; the water outlet pipe (243) is connected to one end of the channel in the heat exchange tube (213) away from the channel hole (212); and the cooling water pipe (214) is connected to one end of the other channel in the heat exchange tube (213).

4. The magnetron sputtering device according to claim 1, characterized in that: The housing (211) is further provided with a driving assembly (216) for driving the bracket (2152) to move left and right along the bearing plate (2151); an elastic member (2159) is installed on the sealing plate (2156) for enabling the bracket (2152) to return to its original position after movement; one end of the elastic member (2159) is fixedly connected to the sealing plate (2156), and the other end is fixedly connected to the bracket (2152); and a spring for connecting with the driving assembly (216) is installed on the baffle plate (2153). The transmission block (2155) cooperates with the transmission, and the driving assembly (216) comprises a double-headed screw (2161) extending in the left-right direction of the housing (211) and rotatably mounted on the inner walls on both sides thereof, and two sliders (2162) threadedly sleeved on both ends of the double-headed screw (2161), the bottom of the slider (2162) abuts against the top of the magnetron sputtering control device (3), and one end of the double-headed screw (2161) extends out of the housing (211) and is mounted with a hand wheel.

5. The magnetron sputtering device according to claim 1, characterized in that: A slot (2158) is provided at the top of the connecting rod (2157); two locking mechanisms (217) are installed on the front outer wall of the housing (211) and are respectively located above the two channel holes (212); the locking mechanism (217) comprises a fixed block fixedly installed on the housing (211); a card plate is slidably installed on the top of the fixed block and is used to cooperate with the slot (2158) to lock the movement of the carrier plate (2151).

6. The magnetron sputtering device according to claim 1, characterized in that: A magnetron sputtering control device (3) is installed on the base for controlling the sputtering process. The base comprises a flat plate for installing the substrate heating device (1) and the magnetron sputtering control device (3). Support legs for supporting the flat plate are installed at the bottom of the flat plate. The number of the support legs is four and they are respectively located at the four corners of the flat plate.

7. A magnetron sputtering method, characterized in that: The magnetron sputtering device according to claim 1 is used, and the magnetron sputtering method is as follows: First, the prepared substrate is placed in a coating chamber (21), and a sputtering target is mounted on a sputtering cathode on top of a magnetic field generating device (23). The coating chamber (21) and a vacuum chamber (22) are evacuated and filled with an inert gas, argon. The magnetic field generating device (23) is started, and a negative high voltage is applied between the target and the substrate. The sputtering cathode cooling device (24) is started to cool the sputtering equipment.

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