Ceramic three-dimensional packaging structure and preparation method

Abstract

The invention provides a ceramic three-dimensional packaging structure. Signals can be transmitted from one side of a multi-layer ceramic substrate to the other side of the multi-layer ceramic substrate, first substrates are arranged on the two sides of the multi-layer ceramic substrate respectively, vertical interconnection through holes are formed in the first substrates, a wall is arranged between the multi-layer ceramic substrate and the first substrates, a chip is arranged in a sealed cavity, and the chip is arranged in the sealed cavity. The chip is connected with the multilayer ceramic substrate or the first substrate; the vertical interconnection columns are arranged between the multi-layer ceramic substrate and the first substrate, the vertical interconnection columns are connected with the vertical interconnection through holes, and the vertical interconnection columns are arranged in the sealing cavities. The vertical interconnection columns are arranged between the multi-layer ceramic substrate and the first substrate and are communicated with the vertical interconnection through holes, so that signals can be transmitted from one side of the multi-layer ceramic substrate to the other side of the multi-layer ceramic substrate and are transmitted out from the connection points of the first substrate, vertical interconnection of the signals is realized, and the signal transmission efficiency is improved. And signals can be transmitted out from the two first substrates, so that double-sided leading-out of the signals is realized.

Description

Technical Field

[0001] The present invention belongs to the technical field of chip packaging, and more specifically, relates to a ceramic three-dimensional packaging structure. In addition, the present invention also relates to a ceramic three-dimensional packaging preparation method. Background Art

[0002] With the continuous development of communication technology, RF transceiver components are developing towards low cost, miniaturization, high heat dissipation, and integrated antennas. High isolation, high heat dissipation, and three-dimensional integrated packaging modules have become an inevitable trend in the development of the industry. Ceramic packaging has been widely used in defense, 5G communications, and other fields due to its high reliability and ability to meet the needs of hermetic packaging. However, the current ceramic packaging is mainly 2D packaging, which cannot achieve vertical interconnection of signals and double-sided signal extraction. Summary of the invention

[0003] The object of the present invention is to provide a ceramic three-dimensional packaging structure to realize vertical interconnection of signals and double-sided lead-out of signals.

[0004] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is: to provide a ceramic three-dimensional packaging structure, including a ceramic three-dimensional packaging structure, two first substrates, a wall and a plurality of vertical interconnection columns, wherein a signal can be transmitted from one side of the multilayer ceramic substrate to the other side of the multilayer ceramic substrate; the first substrates are arranged on both sides of the multilayer ceramic substrate, each of the first substrates is provided with a vertical interconnection through-hole, and a signal can be transmitted from one side of the first substrate to the other side of the first substrate through the vertical interconnection through-hole, and a surface redistribution layer is provided on the side of the first substrate away from the multilayer ceramic substrate, and a connection point is provided to the surface redistribution layer, and the connection The contacts are used to connect with external components; a wall is arranged between the multilayer ceramic substrate and the first substrate, and the wall divides the space between the multilayer ceramic substrate and the first substrate into a plurality of sealed cavities; a chip is arranged in the sealed cavity, and the chip is connected to the multilayer ceramic substrate or the first substrate; a vertical interconnection column is arranged between the multilayer ceramic substrate and the first substrate, and the vertical interconnection column is connected to the vertical interconnection through hole; a vertical interconnection column is arranged in each of the sealed cavities, and a signal can be transmitted from the first substrate to the multilayer ceramic substrate through the vertical interconnection column, and a signal can be transmitted from the multilayer ceramic substrate to the first substrate through the vertical interconnection column.

[0005] In a possible implementation, a plurality of first pads are provided on the side of the first substrate facing the multilayer ceramic substrate, a plurality of second pads are provided on both sides of the multilayer ceramic substrate, the first pads correspond to the second pads one-to-one, and a wall is welded between the corresponding first pads and the second pads by solder; a plurality of first transmission pads are provided on the side of the first substrate facing the multilayer ceramic substrate, a plurality of second transmission pads are provided on both sides of the multilayer ceramic substrate, the first transmission pads correspond to the second transmission pads one-to-one, a vertical interconnection column is welded between the corresponding first transmission pads and the second transmission pads by solder, and the transmission pad is connected to the vertical interconnection through-hole.

[0006] In a possible implementation manner, the first substrate is a single-layer substrate, and the material of the single-layer substrate is any one or more of ceramic, glass, silicon carbide, and silicon.

[0007] In a possible implementation, the wall is made of kovar or copper, and the coplanarity between the wall and the vertical interconnection column is less than 20 μm.

[0008] In a possible implementation, the multilayer ceramic substrate is either a high temperature co-fired ceramic or a low temperature co-fired ceramic.

[0009] In a possible implementation, the multilayer ceramic substrate is connected to the wall and the vertical interconnection column by welding, and the first substrate is connected to the wall and the vertical interconnection column by welding, and the welding method is either single-sided welding or double-sided welding.

[0010] The beneficial effect of the ceramic three-dimensional packaging structure provided by the present invention is that: compared with the prior art, the present invention arranges a first substrate on both sides of the multilayer ceramic substrate, and arranges a vertical interconnection column between the multilayer ceramic substrate and the first substrate, and the vertical interconnection column is connected to the vertical interconnection through hole, so that the signal can be transmitted from one side of the multilayer ceramic substrate to the other side of the multilayer ceramic substrate, and transmitted from the connection point of the first substrate, thereby realizing vertical interconnection of the signal, and the signal can be transmitted from the two first substrates, realizing double-sided lead-out of the signal.

[0011] The present invention also relates to a method for preparing a ceramic three-dimensional package, comprising: S1: Multilayer ceramic substrate is prepared by low temperature co-fired ceramic or high temperature co-fired ceramic process; S2: welding the wall to the pad of the multi-layer ceramic substrate; welding the vertical interconnection column to the transmission pad of the multi-layer ceramic substrate; S3: bonding the chip to the multilayer ceramic substrate or the first substrate, and connecting the pads of the chip to the transmission pads of the multilayer ceramic substrate or the first substrate by wire bonding; S4: welding the pads of the first substrate to the wall, and welding the transmission pads of the first substrate to the vertical interconnection pillars.

[0012] In a possible implementation, in step S2, the solder used for welding is silver-copper solder.

[0013] In a possible implementation, in step S3, the chip is bonded using one or more of nano-sintered silver and conductive glue.

[0014] In a possible implementation, in step S4, the solder used for welding is gold-tin solder.

[0015] The beneficial effect of the ceramic three-dimensional packaging preparation method provided by the present invention is that, compared with the prior art, the present invention can produce a ceramic three-dimensional packaging structure by using this method, thereby realizing vertical interconnection of signals and double-sided lead-out of signals. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0017] Figure 1 A schematic structural diagram of a ceramic three-dimensional packaging structure provided by an embodiment of the present invention; Figure 2 A schematic diagram of the structure of a multilayer ceramic substrate provided by an embodiment of the present invention; Figure 3 A schematic diagram of the structure of a multilayer ceramic substrate after welding of a wall and vertical interconnection columns provided by an embodiment of the present invention; Figure 4 A schematic diagram of the structure of a multilayer ceramic substrate after chip installation according to an embodiment of the present invention; Figure 5 This is a schematic structural diagram of the first substrate after the chip is mounted according to an embodiment of the present invention.

[0018] Among them, the reference numerals in the figures are as follows: 1. First substrate; 2. Multilayer ceramic substrate; 3. Sealed cavity; 4. Second pad; 5. Solder; 6. Chip; 7. Connection point; 102, vertical interconnection via; 103, first pad; 104, surface redistribution layer; 105, first transmission pad; 201, second transmission pad; 202, wall; 203, vertical interconnection column. DETAILED DESCRIPTION

[0019] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0020] It should be further explained that the drawings and implementation modes of the present invention mainly describe the concept of the present invention. On the basis of this concept, the specific forms and settings of some connection relationships, positional relationships, power mechanisms, power supply systems, hydraulic systems and control systems may not be fully described. However, on the premise that those skilled in the art understand the concept of the present invention, those skilled in the art can implement the above-mentioned specific forms and settings in a well-known manner.

[0021] When an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or indirectly connected to the other element.

[0022] The directions or positional relationships indicated by terms such as “length”, “width”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside” and “outside” are based on the directions or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present invention and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operate in a specific direction. Therefore, they should not be understood as limiting the present invention.

[0023] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "multiple" means two or more, and "several" means one or more, unless otherwise clearly and specifically defined.

[0024] Embodiment 1 The ceramic three-dimensional packaging structure provided by the present invention is now described.

[0025] Please also read Figure 1The ceramic three-dimensional packaging structure includes a ceramic three-dimensional packaging structure, two first substrates 1, a wall 202 and a plurality of vertical interconnection columns 203, wherein a signal can be transmitted from one side of the multilayer ceramic substrate 2 to the other side of the multilayer ceramic substrate 2. The first substrates 1 are arranged on both sides of the multilayer ceramic substrate 2, and each first substrate 1 is provided with a vertical interconnection through hole 102, and a signal can be transmitted from one side of the first substrate 1 to the other side of the first substrate 1 through the vertical interconnection through hole 102. A surface redistribution layer 104 is provided on the side of the first substrate 1 away from the multilayer ceramic substrate 2, and a connection point 7 is provided in connection with the surface redistribution layer 104, and the connection point 7 is used to connect with external components. The wall 202 is arranged between the multilayer ceramic substrate 2 and the first substrate 1, and the wall 202 divides the space between the multilayer ceramic substrate 2 and the first substrate 1 into a plurality of sealed cavities 3. The chip 6 is arranged in the sealed cavity 3, and the chip 6 is connected to the multilayer ceramic substrate 2 or the first substrate 1; the vertical interconnection column is arranged between the multilayer ceramic substrate 2 and the first substrate 1, and the vertical interconnection column is connected to the vertical interconnection through hole 102. Each sealed cavity 3 is provided with a vertical interconnection column, and the signal can be transmitted from the first substrate 1 to the multilayer ceramic substrate 2 through the vertical interconnection column, and the signal can be transmitted from the multilayer ceramic substrate 2 to the first substrate 1 through the vertical interconnection column.

[0026] The ceramic three-dimensional packaging structure provided in this embodiment has the following beneficial effects: compared with the prior art, the ceramic three-dimensional packaging structure provided in this embodiment is configured by arranging the first substrate 1 on both sides of the multilayer ceramic substrate 2, and by arranging vertical interconnection columns between the multilayer ceramic substrate 2 and the first substrate 1, and the vertical interconnection columns 203 are connected to the vertical interconnection through holes 102, so that the signal can be transmitted from one side of the multilayer ceramic substrate 2 to the other side of the multilayer ceramic substrate 2, and transmitted from the connection point 7 of the first substrate 1, thereby realizing vertical interconnection of the signal, and the signal can be transmitted from the two first substrates 1, thereby realizing double-sided lead-out of the signal.

[0027] In this embodiment, a plurality of first pads 103 are provided on the side of the first substrate 1 facing the multilayer ceramic substrate 2, a plurality of second pads 4 are provided on both sides of the multilayer ceramic substrate 2, the first pads 103 correspond to the second pads 4 one by one, and the wall 202 is welded between the corresponding first pads 103 and the second pads 4 by solder 5; a plurality of first transmission pads 105 are provided on the side of the first substrate 1 facing the multilayer ceramic substrate 2, a plurality of second transmission pads 201 are provided on both sides of the multilayer ceramic substrate 2, the first transmission pads 105 correspond to the second transmission pads 201 one by one, and the vertical interconnection column 203 is welded between the corresponding first transmission pads 105 and the second transmission pads 201 by solder 5, and the transmission pads are connected to the vertical interconnection through-holes. The provision of the first pads 103 and the second pads 4 can facilitate the installation of the wall 202 between the first substrate 1 and the multilayer ceramic substrate 2.

[0028] In addition, the first substrate 1 is a single-layer substrate, and the material of the single-layer substrate is any one or more of ceramics, glass, silicon carbide, and silicon. The above materials are all common materials and are easy to obtain.

[0029] As a preferred technical solution, the wall 202 is made of kovar or copper, both of which have good thermal expansion properties. The coplanarity between the wall 202 and the vertical interconnection column is less than 20 μm, which is convenient for ensuring welding quality.

[0030] In this embodiment, the multilayer ceramic substrate 2 is any one of high temperature co-fired ceramics or low temperature co-fired ceramics.

[0031] Finally, the multilayer ceramic substrate 2 is connected to the wall 202 and the vertical interconnection column by welding, and the first substrate 1 is connected to the wall 202 and the vertical interconnection column by welding. The welding method is either single-sided welding or double-sided welding. The aforementioned welding method is a common welding process and is easy to produce.

[0032] Embodiment 2 Please also read Figure 2 , Figure 3 , Figure 4 , Figure 5 and Figure 1 , the ceramic three-dimensional packaging preparation method comprises: S1: preparing a multilayer ceramic substrate 2 by using a low temperature co-fired ceramic or a high temperature co-fired ceramic process; S2: welding the wall 202 to the pad of the multilayer ceramic substrate 2; welding the vertical interconnection column to the transmission pad of the multilayer ceramic substrate 2; S3: bonding the chip 6 to the multilayer ceramic substrate 2 or the first substrate 1, and connecting the pads of the chip 6 to the transmission pads of the multilayer ceramic substrate 2 or the first substrate 1 by wire bonding; S4: welding the pads of the first substrate 1 to the wall 202, and welding the transmission pads of the first substrate 1 to the vertical interconnection pillars.

[0033] Specifically, in step S2, the solder 5 used for welding is silver-copper solder 5. In step S4, the solder 5 used for welding is gold-tin solder 5. Since the melting point of silver-copper solder 5 is higher than that of gold-tin solder 5, the welding in step S4 will not cause the welded position in step S2 to be opened. In step S3, the bonding of chip 6 is performed by one or more of nano-sintered silver and conductive glue.

[0034] Compared with the prior art, the ceramic three-dimensional packaging preparation method provided by the present invention can produce a ceramic three-dimensional packaging structure by using the method, thereby realizing vertical interconnection of signals and double-sided lead-out of signals.

[0035] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A ceramic three-dimensional packaging structure, characterized in that: include: A multilayer ceramic substrate (2), wherein a signal can be transmitted from one side of the multilayer ceramic substrate (2) to the other side of the multilayer ceramic substrate (2); Two first substrates (1) are arranged on both sides of the multilayer ceramic substrate (2), each of the first substrates (1) is provided with a vertical interconnection through hole (102), and a signal can be transmitted from one side of the first substrate (1) to the other side of the first substrate (1) through the vertical interconnection through hole (102), and a surface redistribution layer (104) is provided on the side of the first substrate (1) facing away from the multilayer ceramic substrate (2), and a connection point (7) is provided connected to the surface redistribution layer (104), and the connection point (7) is used to connect to external components; A wall (202) is provided between the multilayer ceramic substrate (2) and the first substrate (1), the wall (202) divides the space between the multilayer ceramic substrate (2) and the first substrate (1) into a plurality of sealed cavities (3), the chip (6) is provided in the sealed cavities (3), and the chip (6) is connected to the multilayer ceramic substrate (2) or the first substrate (1); A plurality of vertical interconnection columns are provided between the multilayer ceramic substrate (2) and the first substrate (1), the vertical interconnection columns are connected to the vertical interconnection through holes (102), each of the sealed cavities (3) is provided with a vertical interconnection column, a signal can be transmitted from the first substrate (1) to the multilayer ceramic substrate (2) through the vertical interconnection columns, and a signal can be transmitted from the multilayer ceramic substrate (2) to the first substrate (1) through the vertical interconnection columns.

2. The ceramic three-dimensional packaging structure according to claim 1, characterized in that: A plurality of first solder pads (103) are provided on a side of the first substrate (1) facing the multilayer ceramic substrate (2), a plurality of second solder pads (4) are provided on both sides of the multilayer ceramic substrate (2), the first solder pads (103) correspond to the second solder pads (4) one by one, and the wall (202) is welded between the corresponding first solder pads (103) and the second solder pads (4) by means of solder (5); A plurality of first transmission pads (105) are provided on a side of the first substrate (1) facing the multilayer ceramic substrate (2), and a plurality of second transmission pads (201) are provided on both sides of the multilayer ceramic substrate (2), the first transmission pads (105) and the second transmission pads (201) correspond one to one, vertical interconnection columns (203) are welded between the corresponding first transmission pads (105) and the second transmission pads (201) by means of solder (5), and the transmission pads are connected to the vertical interconnection through holes.

3. The ceramic three-dimensional packaging structure according to claim 2, characterized in that: The first substrate (1) is a single-layer substrate, and the material of the single-layer substrate is any one or more of ceramic, glass, silicon carbide, and silicon.

4. The ceramic three-dimensional packaging structure according to claim 3, characterized in that: The wall (202) is made of kovar or copper, and the coplanarity between the wall (202) and the vertical interconnection column is less than 20 μm.

5. The ceramic three-dimensional packaging structure according to claim 4, characterized in that: The multilayer ceramic substrate (2) is any one of high temperature co-fired ceramics or low temperature co-fired ceramics.

6. The ceramic three-dimensional packaging structure according to claim 5, characterized in that: The multilayer ceramic substrate (2) is connected to the wall (202) and the vertical interconnection column by welding, and the first substrate (1) is connected to the wall (202) and the vertical interconnection column by welding, and the welding method is either single-sided welding or double-sided welding.

7. A method for preparing a ceramic three-dimensional package, characterized in that: include: S1: preparing a multilayer ceramic substrate (2) by using a low temperature co-fired ceramic or a high temperature co-fired ceramic process; S2: welding the wall (202) to the pad of the multilayer ceramic substrate (2); welding the vertical interconnection column to the transmission pad of the multilayer ceramic substrate (2); S3: bonding the chip (6) to the multilayer ceramic substrate (2) or the first substrate (1), and connecting the pads of the chip (6) to the transmission pads of the multilayer ceramic substrate (2) or the first substrate (1) by wire bonding; S4: welding the pads of the first substrate (1) to the wall (202), and welding the transmission pads of the first substrate (1) to the vertical interconnection pillars.

8. The method for preparing a ceramic three-dimensional package according to claim 7, characterized in that: In step S2, the solder (5) used for welding is silver-copper solder (5).

9. The method for preparing a three-dimensional ceramic package according to claim 8, characterized in that: In step S3, the chip (6) is bonded using one or more of nano-sintered silver and conductive glue.

10. The method for preparing a three-dimensional ceramic package according to claim 9, characterized in that: In step S4, the solder (5) used for welding is gold-tin solder (5).

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