Terahertz chip pressure point structure, terahertz chip, bonding method and electronic device

Abstract

The invention is suitable for the technical field of terahertz chip assembly, and provides a terahertz chip pressure point structure, a terahertz chip, a bonding method and an electronic device.The terahertz chip pressure point structure comprises an inverted-T-shaped signal pressure point and two ground pressure points located on the left side and the right side of the signal pressure point; the signal pressure point comprises a first pressure point part and a second pressure point part; the first pressing point part is an inverted-T-shaped convex part, and the second pressing point part is a rectangular part below the inverted-T-shaped convex part; the ground pressure point comprises an upper part and a lower part which are divided by a straight line where the top edge of the second pressure point part is located; the two upper parts are symmetrically distributed on the two sides of the first pressing point part; the interval between the two upper portions is larger than the bottom edge of the second pressing point portion and smaller than or equal to the interval between the two lower portions. The smaller first pressure point part and the two upper parts can be used for chip testing, and the larger second pressure point part can be used for multi-wire bonding, so that the on-chip testing requirement and the assembling requirement can be met at the same time.

Description

Technical Field

[0001] The present application belongs to the technical field of terahertz chip assembly, and in particular to a terahertz chip pressure point structure, a terahertz chip, a bonding method and an electronic device. Background Art

[0002] With the widespread application of terahertz technology in wireless communications, radar, imaging systems and other fields, terahertz monolithic integrated circuit chips have achieved rapid development. Terahertz chips are planar integrated circuits, and the interface generally uses coplanar waveguide (GSG) pressure points, where G stands for ground pressure point and S stands for signal pressure point. This pressure point is used for on-chip testing and gold wire bonding assembly.

[0003] The operating frequency of a terahertz monolithic integrated circuit chip is greater than 100GHz, and generally requires a smaller pressure point size and a shorter pressure point spacing to adapt to a high-frequency GSG microwave probe with a needle spacing of 50um. However, the inventors found that although the pressure point structure of the current terahertz chip can meet the on-wafer testing requirements of the high-frequency GSG microwave probe, due to its small pressure point size, only a single bonding wire can be used for bonding interconnection, which will produce a large parasitic inductance and affect the transmission effect of the terahertz signal. Therefore, during assembly, it is necessary to ensure that the arc length of the bonding wire is as short as possible and the arc height is as low as possible. Such assembly requirements will result in a very low assembly success rate and poor consistency.

[0004] Therefore, the current terahertz chip pressure point structure, while being able to meet the on-wafer testing requirements, cannot meet the assembly requirements. Summary of the invention

[0005] In order to overcome the problems existing in the related art, the embodiments of the present application provide a terahertz chip pressure point structure, a terahertz chip, a bonding method and an electronic device, so that the pressure point structure of the terahertz chip can meet both on-wafer testing requirements and assembly requirements.

[0006] This application is implemented through the following technical solutions:

[0007] In a first aspect, an embodiment of the present application provides a terahertz chip pressure point structure, comprising a convex-shaped signal pressure point, and two ground pressure points located on the left and right sides of the signal pressure point;

[0008] The signal pressure point includes a first pressure point portion and a second pressure point portion; wherein the first pressure point portion is a convex portion of the convex shape, and the second pressure point portion is a rectangular portion below the convex portion of the convex shape;

[0009] The ground pressure point includes an upper part and a lower part, and the upper part and the lower part are divided by a straight line where the top edge of the second pressure point is located; the two upper parts are symmetrically distributed on both sides of the first pressure point; the interval between the two upper parts is greater than the bottom edge of the second pressure point, and less than or equal to the interval between the two lower parts; the two ground pressure points are grounded respectively.

[0010] In combination with the first aspect, in some embodiments, the ground pressure point includes at least two grounding holes, and the grounding holes are used for grounding.

[0011] In combination with the first aspect, in some embodiments, the length of the bottom edge of the second pressure point portion is greater than twice the diameter of two bonding gold wires; and the second pressure point portion is used to connect at least two bonding gold wires.

[0012] In combination with the first aspect, in some embodiments, the above-mentioned terahertz chip pressure point structure is applied to a terahertz chip; the interval between the two upper parts is smaller than the interval between two G needles in a GSG high-frequency probe, and the GSG high-frequency probe is a GSG probe used in the terahertz frequency band; the combined structure of the first pressure point portion and the two upper parts is used to connect to the GSG high-frequency probe to perform on-wafer testing on the terahertz chip.

[0013] In combination with the first aspect, in some embodiments, the upper portion and the lower portion are both rectangular; the two lower portions are symmetrically distributed on both sides of the second pressure point; and the interval between the upper portion and the first pressure point is smaller than the interval between the lower portion and the second pressure point.

[0014] In combination with the first aspect, in some embodiments, the first pressure point is rectangular; the two lower portions are symmetrically distributed on both sides of the second pressure point;

[0015] The upper portion is a combination of a rectangle and a trapezoid, the bottom side of the rectangle is the bottom side of the upper portion, and the top side of the rectangle is collinear with the top side of the first pressure point; the rectangle is located on the side away from the first pressure point, and the trapezoid in the upper portion is located on the side close to the first pressure point; the lower base of the trapezoid is colinear with the first side of the rectangle, and the first side is the side close to the first pressure point;

[0016] The lower portion is a rectangle, the top edge of the lower portion is coplanar with the bottom edge of the upper portion, and the bottom edge of the lower portion is colinear with the bottom edge of the second pressure point.

[0017] In combination with the first aspect, in some embodiments, the length of the bottom side of the first pressure point is 35 μm; the length of the bottom side of the second pressure point is 70 μm; the trapezoid in the upper part is a right-angled trapezoid, and the waist of the right-angled trapezoid perpendicular to the bottom side is collinear with the top side of the first pressure point; the interval between the upper part and the first pressure point is 20 μm; the interval between the lower part and the second pressure point is 40 μm.

[0018] In a second aspect, an embodiment of the present application provides a terahertz chip, which includes the terahertz chip pressure point structure as described in any one of the first aspects above.

[0019] In a third aspect, an embodiment of the present application provides a terahertz chip bonding method, which is applied to the terahertz chip described in the second aspect above; the terahertz chip pressure point structure is arranged at the edge of the terahertz chip, and the second pressure point position is located between the edge and the first pressure point position; the bonding method includes: from the side where the bottom edge of the second pressure point position is located, bonding at least two bonding gold wires to the second pressure point position.

[0020] In a fourth aspect, an embodiment of the present application provides an electronic device, which includes the terahertz chip as described in the second aspect above.

[0021] Compared with the related art, the embodiments of the present application have the following beneficial effects:

[0022] The terahertz chip pressure point structure provided in the embodiment of the present application includes a signal pressure point in the shape of a convex letter, and two ground pressure points located on the left and right sides of the signal pressure point; the ground pressure point includes an upper part and a lower part, and the upper part and the lower part are divided by a straight line where the top edge of the second pressure point part is located; the two upper parts are symmetrically distributed on both sides of the first pressure point part; the interval between the two upper parts is greater than the bottom edge of the second pressure point part, and is less than or equal to the interval between the two lower parts. Since the first pressure point part in the signal pressure point is a convex part in the shape of a convex letter, and the second pressure point part is a part below the convex part, the size of the second pressure point part is greater than the first pressure point part. For the smaller first pressure point part, the interval between the two upper parts on both sides is also smaller. Such a combination structure of the first pressure point part and the two upper parts can meet the smaller needle spacing requirements of the high-frequency microwave probe during on-chip testing. For the larger second pressure point part, it can realize the assembly method of double wire bonding, thereby reducing parasitic inductance, while reducing assembly difficulty, and meeting assembly requirements. Therefore, the terahertz chip pressure point structure provided in the embodiment of the present application can simultaneously meet the on-chip testing requirements and assembly requirements of the terahertz chip.

[0023] It can be understood that the beneficial effects of the second to fourth aspects mentioned above can be found in the relevant description of the first aspect mentioned above, and will not be repeated here.

[0024] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or related technical descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0026] Figure 1 This is a schematic diagram of the structure of the pressure point of the existing terahertz chip provided in one embodiment of the present application;

[0027] Figure 2 It is a schematic diagram of performing on-wafer testing and single-wire bonding through existing terahertz chip pressure points provided by an embodiment of the present application;

[0028] Figure 3 is a schematic diagram of an improved terahertz chip pressure point structure provided in an embodiment of the present application;

[0029] Figure 4 is a schematic diagram of an improved terahertz chip pressure point structure provided by another embodiment of the present application;

[0030] Figure 5 is a schematic diagram of an improved terahertz chip pressure point structure provided by another embodiment of the present application;

[0031] Figure 6 is a schematic diagram of an improved terahertz chip pressure point structure provided by yet another embodiment of the present application;

[0032] Figure 7 It is a schematic diagram of on-wafer testing and single-wire bonding through an improved terahertz chip pressure point structure provided in one embodiment of the present application. DETAILED DESCRIPTION

[0033] In the following description, specific details such as specific system structures, technologies, etc. are provided for the purpose of illustration rather than limitation, so as to provide a thorough understanding of the embodiments of the present application. However, it should be clear to those skilled in the art that the present application may also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to prevent unnecessary details from obstructing the description of the present application.

[0034] The term "including" and any other variations in the specification and claims of this solution and the above drawings mean "including but not limited to", and is intended to cover non-exclusive inclusions and is not limited to the examples listed in the text. In addition, the terms "first" and "second" are used to distinguish different objects, not to describe a specific order.

[0035] For current terahertz monolithic integrated circuit chips, the width of the signal pressure point needs to be adapted to the GSG high-frequency probe with a needle spacing of 50μm. Under the condition of reasonable design of the gap between the signal pressure point and the ground pressure point, the width of the signal pressure point is usually less than 50μm. For example, see Figure 1 The width of the signal pressure point S (the end of the signal transmission line) of a certain terahertz chip is 35μm, the width of the ground pressure point G on both sides is 80μm, and the gap between the signal pressure point S and the ground pressure point G is 20μm. Since the bonding wire itself has a certain diameter, and the assembly interval between the gold wires may also need to be considered when bonding multiple wires, only a single bonding gold wire can be used for bonding interconnection of such a small-sized signal pressure point. The schematic diagram of the on-wafer test and single-wire bonding of the terahertz chip is shown in the figure. Figure 2 As shown, Figure 2 (a) is a schematic diagram of on-wafer testing. Figure 2 (b) Schematic diagram of single-filament bonding.

[0036] In order to minimize the parasitic inductance caused by single-wire bonding and improve the signal transmission quality, it is necessary to ensure that the arc length of the bonding wire is as short as possible and the arc height is as low as possible during assembly. This brings great challenges to the assembly work, resulting in a low assembly success rate and poor consistency, which affects production efficiency and causes waste of resources.

[0037] Based on the above problems, the inventors of the present application have proposed an improved terahertz chip pressure point structure that can meet the needs of on-chip testing, improve the transmission quality of signals, and has low assembly difficulty. The signal pressure points in the improved terahertz chip pressure point structure include a smaller first pressure point portion and a larger second pressure point portion. The first pressure point portion is smaller, and the interval between the two parts of the pressure points on both sides is also smaller. Such a pressure point structure can meet the smaller needle spacing requirements of high-frequency microwave probes during on-chip testing. The larger second pressure point portion can be assembled using a double-wire bonding method to reduce parasitic inductance and reduce assembly difficulty, thereby meeting assembly requirements.

[0038] Next, in conjunction with the drawings in the specification Figures 3 to 6 , the improved terahertz chip pressure point structure provided in the embodiment of the present application is described in detail:

[0039] See also Figure 3The terahertz chip pressure point structure provided in the embodiment of the present application includes a signal pressure point S in a convex shape, and two ground pressure points G located on the left and right sides of the signal pressure point S.

[0040] The signal pressure point S includes a first pressure point portion 301 and a second pressure point portion 302 ; wherein the first pressure point portion 301 is a convex portion of a convex shape, and the second pressure point portion 302 is a rectangular portion below the convex portion of the convex shape.

[0041] The ground pressure point G includes an upper part 311 and a lower part 312, and the upper part 311 and the lower part 312 are divided by a straight line where the top edge of the second pressure point position 302 is located; the two upper parts 311 are symmetrically distributed on both sides of the first pressure point position 301; the interval between the two upper parts 311 is greater than the bottom edge of the second pressure point position 302, and is less than or equal to the interval between the two lower parts 312; the two ground pressure points G are grounded respectively.

[0042] In the embodiment of the present application, a smaller first pressure point part 301 is designed in the pressure point structure of the terahertz chip. The interval between the ground pressure point parts (upper part 311) on both sides of the smaller first pressure point part 301 is also smaller, that is, the gap between the first pressure point part 301 and the ground pressure point G is smaller, so that the smaller first pressure point part 301 and the smaller gap can be tested using a GSG high-frequency probe with a smaller needle interval, thereby meeting the requirements of the on-wafer test of the terahertz chip. In the embodiment of the present application, a second pressure point part 302 larger than the first pressure point part 301 is also designed in the pressure point structure of the terahertz chip. The second pressure point part 302 can be used for multi-wire bonding, such as double-wire bonding. Compared with the single-wire bonding method, the parasitic inductance brought by the double-wire bonding is very small, and the assembly difficulty is also relatively low, so the second pressure point part 302 can meet the assembly requirements of the terahertz chip.

[0043] It can be understood that in the above embodiments, the description of the terahertz chip pressure point structure is only a description from a certain perspective, and the position and direction of the terahertz chip pressure point structure in the terahertz chip can be flexibly set according to actual needs. For example, the terahertz chip in a certain embodiment needs to place the pressure point on the left side of the chip top view, then at this time, the convex part of the convex signal pressure point in the above terahertz chip pressure point structure can be made to face the right side.

[0044] Preferably, the terahertz chip pressure point structure is arranged at the edge of the terahertz chip, the second pressure point portion 302 in the signal pressure point S is located between the edge and the first pressure point portion 301, and the bottom side of the second pressure point portion is parallel to the edge.

[0045] In practical applications, the second pressure point 302 may be the end portion of the signal transmission line in the terahertz chip, and the first pressure point 301 may be the previous portion adjacent to the end portion. The length direction of the first pressure point 301 is the extension direction of the signal transmission line, and the width of the first pressure point 301 is the width of the signal transmission line. The width direction of the second pressure point 302 is consistent with the width direction of the first pressure point 301, and the width of the second pressure point 302 is greater than the width of the first pressure point. The upper part 311 of the ground pressure point G is the grounding belt on both sides with the first pressure point 301 as the center belt, and the lower part 312 of the ground pressure point G is the grounding belt on both sides with the second pressure point 302 as the center belt.

[0046] In some embodiments, see Figure 4 The ground pressure point G may include at least two grounding holes 401, and the grounding holes 401 are used for grounding.

[0047] Preferably, the ground pressure point G includes two grounding holes 401 ; wherein the upper portion 311 includes one grounding hole 401 , and the lower portion 312 includes another grounding hole 401 .

[0048] In the above embodiment, the ground pressure point G on each side includes two grounding holes 401. Compared with the setting of a single grounding hole, the parasitic inductance from the ground hole to the ground can be reduced, which helps to eliminate the high-frequency resonance of the pressure point itself, thereby improving the signal transmission effect.

[0049] In some embodiments, the length of the bottom side of the second pressure point portion 302 is greater than twice the diameter of the two bonding gold wires; the second pressure point portion 302 is used to connect at least two bonding gold wires.

[0050] Preferably, the length of the bottom side of the second pressure point part 302 is the sum of twice the diameter of the two bonding gold wires and the preset installation interval; the second pressure point part 302 is used to connect the two bonding gold wires. The preset installation interval includes the installation interval between the two bonding gold wires and the distance between the side of the second pressure point part 302 and the adjacent bonding gold wires.

[0051] In the above embodiment, the bottom edge of the second pressure point portion 302 is set to a length that is just suitable for double-wire bonding, so that double-wire bonding can be performed on the signal pressure point S during the assembly process of the terahertz chip, thereby reducing parasitic inductance, lowering assembly difficulty, and improving signal transmission effect.

[0052] In some implementations, the interval between the two upper portions 311 is smaller than the interval between two G needles in a GSG high-frequency probe, which is a GSG probe used in the terahertz frequency band; the combined structure of the first pressure point portion 301 and the two upper portions 311 is used to connect to the GSG high-frequency probe to perform on-wafer testing of the terahertz chip.

[0053] In the above embodiment, the interval between the two upper parts 311 is smaller than the interval between the two G needles in the GSG high-frequency probe, and the two upper parts 311 are symmetrically distributed on the left and right sides of the first pressure point 301. In other words, the gap between the two upper parts 311 and the first pressure point 301 is equal, and the gap is smaller than the needle interval of the GSG high-frequency probe. Therefore, the above first pressure point 301 and the two upper parts 311 on both sides can be well adapted to the GSG probe for terahertz, and can realize on-wafer testing.

[0054] In some implementations, see Figure 4 The upper portion 311 and the lower portion 312 may both be rectangular. The two lower portions 312 are symmetrically distributed on both sides of the second pressure point portion 302. The interval between the upper portion 311 and the first pressure point portion 301 is smaller than the interval between the lower portion 312 and the second pressure point portion 302.

[0055] In the case where it is not necessary to meet specific electrical requirements, in order to simplify design and manufacturing, the two ground pressure points G can be symmetrically distributed on the left and right sides of the signal pressure point S. At the same time, in the above embodiment, the upper part 311 and the lower part 312 are both designed as regular rectangles, so the terahertz chip pressure point structure in the above embodiment helps to improve design efficiency and manufacturing efficiency. In some embodiments other than this embodiment, the interval between the two lower parts 312 can be very close to the interval between the two upper parts 311. In this case, the interval between the lower part 312 and the second pressure point part 302 may be too small, which is not conducive to signal transmission. In this embodiment, the interval between the lower part 312 and the second pressure point part 302 is larger than the interval between the upper part 311 and the first pressure point part 301, which is more conducive to signal transmission.

[0056] In some implementations, see Figure 5 , the first pressure point 301 is a rectangle; the two lower parts 312 are symmetrically distributed on both sides of the second pressure point 302. The upper part 311 is a combination of the first rectangle 501 and the trapezoid 502, the bottom side of the first rectangle 501 is the bottom side of the upper part 311, and the top side of the first rectangle 501 is collinear with the top side of the first pressure point 301. The first rectangle 501 is located on the side away from the first pressure point 301, and the trapezoid 502 is located on the side close to the first pressure point 301. The lower base of the trapezoid 502 is colinear with the first side of the first rectangle 501, and the first side is the side close to the first pressure point 301. The lower part 312 is a second rectangle 503, the top side of the lower part 312 is colinear with the bottom side of the first rectangle 501, and the bottom side of the lower part 312 is collinear with the bottom side of the second pressure point 302.

[0057] Optionally, the length of the bottom side of the lower portion 312 is 42.5 μm.

[0058] Optionally, the length of the bottom side of the lower portion 312 is 100 μm.

[0059] Preferably, see Figure 6 , the trapezoid 502 in the upper part 311 is a right-angled trapezoid, and the waist of the right-angled trapezoid perpendicular to the bottom side is collinear with the top side of the first pressure point part 301. Among them, - the length of the bottom side of the first pressure point part 301 is 35μm; the length of the bottom side of the second pressure point part 302 is 70μm. The interval between the upper part 311 and the first pressure point part 301 is 20μm. The interval between the lower part 312 and the second pressure point part 302 is 40μm.

[0060] The improved terahertz chip pressure point structure in the above embodiment has an operating frequency greater than 100GHz and excellent performance. The double ground hole design of the ground pressure point G can make the ground inductance smaller and effectively suppress the adverse effects of high-frequency resonance generated by the pressure point itself. This new pressure point can meet the testing requirements and assembly requirements of terahertz chips. The schematic diagram of using the above improved terahertz chip pressure point structure for on-wafer testing and double wire bonding is shown in FIG. Figure 7 As shown, Figure 7 (a) is a schematic diagram of on-wafer testing. Figure 7 (b) Schematic diagram of double wire bonding.

[0061] Based on the terahertz chip pressure point structure provided in the above embodiments, an embodiment of the present application further provides a terahertz chip, which includes the terahertz chip pressure point structure in the above embodiments.

[0062] It is understandable that the above-mentioned terahertz chip pressure point structure can be set at a suitable position according to the circuit design in the actual chip to facilitate bonding and interconnection.

[0063] The embodiment of the present application also provides a terahertz chip bonding method, which is applied to the terahertz chip in the above embodiment; the bonding method includes: bonding at least two bonding gold wires to the second pressure point portion 302 from the side where the bottom edge of the second pressure point portion 302 is located.

[0064] Preferably, the bonding method comprises: bonding two bonding gold wires to the second pressure point portion 302 from the side where the bottom edge of the second pressure point portion 302 is located.

[0065] The above bonding method can reduce parasitic inductance as much as possible and improve signal transmission quality. At the same time, the assembly requirements of this bonding method are lower than those of single-wire bonding, thus reducing the assembly difficulty and improving the consistency of terahertz chip assembly.

[0066] An embodiment of the present application also provides an electronic device, which includes the terahertz chip provided in the embodiment of the present application.

[0067] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A terahertz chip pressure point structure, characterized in that: It includes a signal pressure point in a convex shape, and two ground pressure points located on the left and right sides of the signal pressure point; The signal pressure point includes a first pressure point portion and a second pressure point portion; wherein the first pressure point portion is a convex portion of the convex shape, and the second pressure point portion is a rectangular portion below the convex portion of the convex shape; The ground pressure point includes an upper part and a lower part, and the upper part and the lower part are divided by a straight line where the top edge of the second pressure point is located; the two upper parts are symmetrically distributed on both sides of the first pressure point; the interval between the two upper parts is greater than the bottom edge of the second pressure point, and less than or equal to the interval between the two lower parts; the two ground pressure points are grounded respectively.

2. The terahertz chip pressure point structure according to claim 1, characterized in that: The ground pressure point includes at least two grounding holes, and the grounding holes are used for grounding.

3. The terahertz chip pressure point structure according to claim 1, characterized in that: The length of the bottom side of the second pressure point is greater than twice the diameter of the two bonding gold wires; The second pressure point is used for bonding at least two bonding gold wires.

4. The terahertz chip pressure point structure according to claim 1, characterized in that: Applicable to terahertz chip; the interval between the two upper parts is smaller than the interval between two G needles in the GSG high-frequency probe, and the GSG high-frequency probe is a GSG probe used in the terahertz frequency band; The combined structure of the first pressure point and the two upper parts is used to connect with the GSG high-frequency probe to perform on-wafer testing on the terahertz chip.

5. The terahertz chip pressure point structure according to claim 1, characterized in that: The upper portion and the lower portion are both rectangular; The two lower parts are symmetrically distributed on both sides of the second pressure point; The interval between the upper portion and the first pressure point is smaller than the interval between the lower portion and the second pressure point.

6. The terahertz chip pressure point structure according to claim 1, characterized in that: The first pressure point is rectangular; the two lower parts are symmetrically distributed on both sides of the second pressure point; The upper portion is a combination of a rectangle and a trapezoid, the bottom side of the rectangle is the bottom side of the upper portion, and the top side of the rectangle is collinear with the top side of the first pressure point; the rectangle is located on the side away from the first pressure point, and the trapezoid in the upper portion is located on the side close to the first pressure point; the lower base of the trapezoid is colinear with the first side of the rectangle, and the first side is the side close to the first pressure point; The lower portion is a rectangle, the top edge of the lower portion is coplanar with the bottom edge of the upper portion, and the bottom edge of the lower portion is colinear with the bottom edge of the second pressure point.

7. The terahertz chip pressure point structure according to claim 6, characterized in that: The length of the bottom edge of the first pressure point is 35 μm; the length of the bottom edge of the second pressure point is 70 μm; The trapezoid in the upper part is a right-angled trapezoid, and the waist of the right-angled trapezoid perpendicular to the bottom side is collinear with the top side of the first pressure point; the interval between the upper part and the first pressure point is 20 μm; The interval between the lower portion and the second pressure point is 40 μm.

8. A terahertz chip, characterized in that: It comprises the terahertz chip pressure point structure as described in any one of claims 1 to 7.

9. A bonding method for a terahertz chip, characterized in that: Applied to the terahertz chip according to claim 8, the terahertz chip pressure point structure is provided at the edge of the terahertz chip, and the second pressure point portion is located between the edge and the first pressure point portion; the bonding method comprises: At least two bonding gold wires are bonded to the second pressure point from the side where the bottom edge of the second pressure point is located.

10. An electronic device, characterized in that: Comprising the terahertz chip as claimed in claim 8.

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