Manufacturing method of environment-friendly IC carrier tape conduction product

Abstract

The invention relates to the technical field of IC card carrier tape production, in particular to a manufacturing method of an environment-friendly IC carrier tape conduction product, and the manufacturing method comprises the following steps of stamping, copper sputtering, dry film pressing, exposure, developing, copper electroplating, film stripping, micro-etching, electroplating and slitting. The health of people cannot be influenced, and environmental protection is facilitated.

Description

Technical Field

[0001] The invention relates to the technical field of IC card carrier tape production, and in particular to a method for manufacturing an environmentally friendly IC carrier tape conductive product. Background Art

[0002] At present, copper plating technology is mostly used in the preparation process of IC card carrier conduction. Specifically, the traditional process steps are as follows: Stamping: Use a substrate with a self-adhesive layer for stamping to obtain a through hole. Copper plating: Use copper plating equipment to apply copper foil to the substrate, and the thickness of the copper foil is at least 35μm. Baking: Put the substrate with copper foil into the oven for baking to completely solidify the adhesive layer of the product. Copper plating: Use copper plating technology to copper plate the welding hole of the product. This process will use a large amount of toxic potions. In addition, the bonding force of copper plating is poor in mechanical strength. Cleaning: Clean and micro-etch the copper foil surface to remove the oxide layer on the surface of the copper foil. Press dry film: Press dry film on the upper and lower sides of the product. Exposure: Expose the upper and lower sides of the product at the same time. Development: Use a weak alkaline solution to dissolve the dry film in the non-graphic area of ​​the product. Etching: Etch away the copper in the non-graphic area. Stripping: Use a strong alkaline solution to dissolve the dry film. Electroplating: Gold-plating the product. Slitting: Slitting the product. For example, the production process of a conductive dual-interface IC smart card carrier disclosed in publication number CN110739225A also uses domestic common copper foil to cover the surface of the substrate after punching. At present, the existing technology has the following problems: First: The production of existing IC card carrier conductive products requires the use of copper deposition technology for conduction, which will use a large amount of toxic liquid. The use and discharge of liquids bring huge burdens to production and the environment, and also affect the health of workers; Second: IC card carrier conductive products produced using copper deposition technology need to use a substrate with an adhesive layer to first paste the copper foil, and then cure the substrate to make the copper foil and the substrate tightly bonded; Third: IC card carrier conductive products produced using copper deposition technology will have a large amount of copper etched away during the etching process, and the copper utilization rate is only 30%~40%, resulting in a waste of resources; Fourth: The bonding strength between the copper layer and the substrate in the through-hole of the IC card carrier conductive product produced using copper deposition technology is poor, at the level of 0.6N / mm. The mechanical properties of the cards made using this process are not good, and the failure rate of three wheels and mechanical bending is about 20%. Summary of the invention

[0003] The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide a method for manufacturing an environmentally friendly IC carrier tape conduction product.

[0004] The technical solution adopted by the present invention to solve the technical problem is: the manufacturing method of the environmentally friendly IC carrier tape conductive product comprises the following steps: Stamping: Punching the substrate to obtain through holes; Sputtering copper: The substrate surface and through-holes are treated with sputtering copper; Pressing dry film: Pressing dry film treatment on the upper and lower sides of the product; Exposure: Expose both the upper and lower sides of the product at the same time; Development: Use a weak alkaline solution to dissolve the dry film in the graphic area of ​​the product to expose the graphic; Electroplating copper: Electroplating process is performed on the graphic area; Stripping: Stripping the exposed dry film; Micro-etching: Micro-etching away the sputtered copper in non-patterned areas; Electroplating: gold plating; Cutting: Cut the product into pieces.

[0005] In the punching process, a punching device is used to punch holes in the substrate to obtain through holes. The punching speed is 235 SPM to 260 SPM and the air pressure is 4 Kg / cm 2 ~6Kg / cm 2 .

[0006] In the copper sputtering, the substrate is placed in a sputtering vacuum chamber, the vacuum pressure range is 0.4Pa~0.7Pa, nitrogen is used as the reaction gas, argon is used as the sputtering gas, the copper layer is sputtered on the surface and through-holes of the carrier substrate, the power range of the copper target power supply is 10KW~25KW, and the sputtering time range is 10~30min; after the sputtering is completed, the pressure in the vacuum chamber is balanced with the atmospheric pressure, and the temperature of the vacuum chamber is reduced to 25°C~50°C.

[0007] The sputtered copper thickness ranges from 5μm to 10μm.

[0008] In the dry film pressing process, the upper and lower surfaces of the product are subjected to dry film pressing, and the upper and lower dry films are applied to the contact surface and the welding surface of the carrier product using a dry film pressing machine. The dry film pressing temperature is 95°C to 120°C, the pressure range is 0.1MPa to 0.5MPa, and the dry film pressing speed is 4m / min to 10m / min.

[0009] In the exposure process, after the film and the product are precisely aligned in the exposure machine, the pattern on the film is irradiated on the product through vacuum suction and ultraviolet irradiation. The upper and lower sides of the product are exposed at the same time (the exposed part is the non-graphic area). The exposure energy is measured by a 41-grid exposure ruler, the upper exposure lamp energy is 15~25 grids, and the exposure speed is 1m / min~3m / min.

[0010] In the development, the weak alkalinity of the sodium carbonate aqueous solution is used to dissolve the dry film at the position not irradiated by ultraviolet rays (the pattern area), thereby exposing the pattern and retaining the dry film at the position irradiated by ultraviolet rays (the non-pattern area); The concentration of sodium carbonate solution is 5g / L~15g / L, the developing temperature is 25℃~35℃, and the developing speed is 4m / min~6m / min.

[0011] The copper electroplating process is performed on the graphic area of ​​the product using electroplating technology, the electroplating solution is a copper sulfate solution, the concentration range is 60g / L~80g / L, the liquid temperature range is 20℃~35℃, the current range is 1ASD~6ASD, the time range is 30min~50min, and the electroplated copper thickness range is 25μm~35μm.

[0012] In the film stripping, a sodium hydroxide alkaline solution is used to strip the exposed dry film, the concentration range is 25g / L~40g / L, the film stripping temperature range is 50℃~60℃, and the film stripping speed range is 4m / min~6m / min.

[0013] In the micro-etching, dilute sulfuric acid is used as a micro-etching liquid to micro-etch the product, and the sputtered copper in the non-pattern position is micro-etched away. The micro-etching speed is 5m / min~7m / min, and the concentration range of the micro-etching liquid is 20ml / L~40ml / L.

[0014] In the electroplating, the contact surface of the product is gold-plated, the plating solution is Deli neutral gold plating solution or other finished electroplating solution, heated to 40°C~50°C, and electroplated for 3S~8S using a current density of 0.1ASD~0.3ASD; the pressure welding surface is soft gold plated, the plating solution is Deli neutral gold plating solution or other finished electroplating solution, the product is connected to the cathode of a DC power supply, and the platinum titanium mesh is used as an anode to electroplate the pressure welding surface of the product, which is heated to 60°C~70°C and electroplated for 8S~15S using a current density of 2ASD~6ASD.

[0015] Use slitting equipment to cut the product into finished products with a width of 35cm.

[0016] Compared with the prior art, the present invention has the following beneficial effects: This application avoids the use and discharge of copper precipitation liquid, will not cause harm to water resources and soil resources, will not affect the health of personnel, and is beneficial to environmental protection; In the production process, only glue-free substrates can be used, eliminating the copper lamination and curing processes, which not only reduces energy waste and greenhouse gas emissions, but also simplifies the process and improves production efficiency.

[0017] In this application, the utilization rate of copper can reach more than 95%, while the utilization rate of copper in through-hole products produced using copper deposition technology is only 40%, which saves resources and reduces waste of resources, which is beneficial to environmental protection.

[0018] Due to the use of sputtering copper process, the bonding strength between the copper layer and the substrate in the through hole will be greatly improved compared with the copper deposition process. The bonding strength can reach 1.2N / mm, which is 50% higher than the original copper deposition process.

[0019] After using the carrier tape produced by the present application to make cards, the failure rate of the card mechanical properties three-round and torsion test is 2%, which is 10 times lower than the failure rate of the copper plating process. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 The present invention is a process flow chart for preparing the same; Figure 2 Schematic diagram showing the comparison of copper utilization rates of Examples 1-3 and the comparative example; Figure 3 It is a schematic diagram comparing the binding strength of Examples 1-3 and the comparative example products. DETAILED DESCRIPTION

[0021] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] Example 1 Reference Figure 1-Figure 3 The method for manufacturing an environmentally friendly IC carrier tape conductive product includes the following steps: Punching: Punching the substrate to obtain through holes; in the punching, the substrate is punched with a punching device to obtain through holes, the punching speed is 235 SPM, and the air pressure is 4 Kg / cm 2 .

[0023] Sputtering copper: The substrate surface and through-holes are subjected to sputtering copper treatment; in the sputtering copper, the substrate is placed in a sputtering vacuum chamber, the vacuum pressure is 0.4Pa, nitrogen is used as the reaction gas, argon is used as the sputtering gas, and a copper layer is sputtered on the surface of the carrier substrate and the through-holes, the copper target power supply power is 10KW, and the sputtering time is 10min; after the sputtering is completed, the pressure in the vacuum chamber is balanced with the atmospheric pressure, and the temperature of the vacuum chamber is reduced to 25°C. The sputtered copper thickness is 5μm.

[0024] Pressed dry film: The upper and lower surfaces of the product are pressed dry film treated; in the pressed dry film, the upper and lower surfaces of the product are pressed dry film treated, and the upper and lower dry films are applied to the contact surface and the welding surface of the carrier product using a pressed dry film machine. The pressed dry film temperature is 95°C, the pressure is 0.1MPa, and the pressed dry film speed is 4m / min.

[0025] Exposure: Expose the upper and lower sides of the product at the same time; in the exposure, after the film and the product are accurately aligned in the exposure machine, the pattern on the film is irradiated on the material through vacuum suction and ultraviolet irradiation. Expose the upper and lower sides of the product at the same time (the exposed part is the non-graphic area), the exposure energy is measured by a 41-grid exposure ruler, the upper exposure light energy is 15 grids, and the exposure speed is 1m / min.

[0026] Development: dissolve the dry film in the graphic area of ​​the product to expose the graphic; in the development, the weak alkalinity of the sodium carbonate aqueous solution is used to dissolve the dry film in the position not irradiated by ultraviolet rays (graphic area), leak out the graphic, and retain the dry film in the position irradiated by ultraviolet rays (non-graphic area); the concentration of the sodium carbonate solution is 5g / L, the developing temperature is 25°C, and the developing speed is 4m / min.

[0027] Copper electroplating: an electroplating process is performed in the graphic area; the copper electroplating process is performed in the graphic area of ​​the product using electroplating technology, the electroplating solution is a copper sulfate solution, the concentration is 60g / L, the liquid temperature is 20°C, the current is 1ASD, the time is 30min, and the electroplated copper thickness is 25μm.

[0028] Stripping: The exposed dry film is stripped; in the stripping, the exposed dry film is stripped with an alkaline solution of sodium hydroxide, the concentration is 25 g / L, the stripping temperature is 50° C., and the stripping speed is 4 m / min.

[0029] Micro-etching: micro-etching away the sputtered copper in the non-patterned area; in the micro-etching, dilute sulfuric acid is used as a micro-etching liquid to micro-etch the product to micro-etch away the sputtered copper in the non-patterned position, the micro-etching speed is 5m / min, and the micro-etching liquid concentration is 20ml / L.

[0030] Electroplating: gold plating treatment is performed; in the electroplating, the contact surface of the product is gold-plated, the plating solution uses Deli neutral gold plating solution or other finished electroplating solution, heated to 40°C, and electroplated for 3S using a current density of 0.1ASD; soft gold electroplating is performed on the pressure welding surface, the plating solution uses Deli neutral gold plating solution or other finished electroplating solution, the product is connected to the cathode of the DC power supply, and the platinum titanium mesh is used as the anode to electroplate the pressure welding surface of the product, heated to 60°C, and electroplated for 8S using a current density of 2ASD.

[0031] Cutting: Cut the product into pieces with a width of 35 cm using cutting equipment.

[0032] Example 2 Reference Figure 1-Figure 3 The method for manufacturing an environmentally friendly IC carrier tape conductive product includes the following steps: Punching: Punching the substrate to obtain through holes; in the punching, the substrate is punched with a punching device to obtain through holes, the punching speed is 245 SPM, and the air pressure is 5 Kg / cm 2 .

[0033] Sputtering copper: The substrate surface and through-holes are subjected to sputtering copper treatment; in the sputtering copper, the substrate is placed in a sputtering vacuum chamber, the vacuum pressure is 0.55Pa, nitrogen is used as the reaction gas, argon is used as the sputtering gas, and a copper layer is sputtered on the surface of the carrier substrate and the through-holes, the copper target power supply power is 15KW, and the sputtering time is 20min; after the sputtering is completed, the pressure in the vacuum chamber is balanced with the atmospheric pressure, and the vacuum chamber temperature is reduced to 40°C. The sputtered copper thickness is 7.5μm.

[0034] Pressed dry film: The upper and lower surfaces of the product are pressed dry film treated; in the pressed dry film, the upper and lower surfaces of the product are pressed dry film treated, and the upper and lower dry films are attached to the contact surface and the welding surface of the carrier product using a pressed dry film machine. The pressed dry film temperature is 100°C, the pressure is 0.3MPa, and the pressed dry film speed is 7m / min.

[0035] Exposure: Expose the upper and lower sides of the product at the same time; in the exposure, after the film and the product are accurately aligned in the exposure machine, the pattern on the film is irradiated on the material through vacuum suction and ultraviolet irradiation. Expose the upper and lower sides of the product at the same time (the exposed part is the non-graphic area), the exposure energy is measured by a 41-grid exposure ruler, the upper exposure light energy is 20 grids, and the exposure speed is 2m / min.

[0036] Development: dissolve the dry film in the graphic area of ​​the material to expose the graphic; in the development, the weak alkalinity of the sodium carbonate aqueous solution is used to dissolve the dry film in the position not irradiated by ultraviolet rays (graphic area), leak out the graphic, and retain the dry film in the position irradiated by ultraviolet rays (non-graphic area); the concentration of the sodium carbonate solution is 10g / L, the development temperature is 30°C, and the development speed is 5m / min.

[0037] Copper electroplating: electroplating process is performed in the graphic area; the copper electroplating process is performed in the graphic area of ​​the product using electroplating technology, the electroplating solution is a copper sulfate solution, the concentration is 70g / L, the liquid temperature is 28°C, the current is 3.5ASD, the time is 40min, and the copper electroplating thickness is 30μm.

[0038] Stripping: The exposed dry film is stripped; in the stripping, the exposed dry film is stripped with an alkaline sodium hydroxide solution, the concentration is 32.5 g / L, the stripping temperature is 55° C., and the stripping speed is 5 m / min.

[0039] Micro-etching: micro-etching away the sputtered copper in the non-patterned area; in the micro-etching, dilute sulfuric acid is used as a micro-etching liquid to micro-etch the product to micro-etch away the sputtered copper in the non-patterned position, the micro-etching speed is 6m / min, and the micro-etching liquid concentration is 35ml / L.

[0040] Electroplating: gold plating treatment is performed; in the electroplating, the contact surface of the product is gold-plated, the plating solution uses Deli neutral gold plating solution or other finished electroplating solution, heated to 45°C, and electroplated for 6S using a current density of 0.2ASD; soft gold electroplating is performed on the pressure welding surface, the plating solution uses Deli neutral gold plating solution or other finished electroplating solution, the product is connected to the cathode of the DC power supply, and the platinum titanium mesh is used as the anode to electroplate the pressure welding surface of the product, heated to 65°C, and electroplated for 11S using a current density of 4ASD.

[0041] Cutting: Cut the product into pieces with a width of 35 cm using cutting equipment.

[0042] Example 3 Reference Figure 1-Figure 3 The method for manufacturing an environmentally friendly IC carrier tape conductive product includes the following steps: Punching: Punching the substrate to obtain through holes; in the punching, the substrate is punched with a punching device to obtain through holes, the punching speed is 260 SPM, and the air pressure is 6 Kg / cm 2 .

[0043] Sputtering copper: The substrate surface and through-holes are subjected to sputtering copper treatment; in the sputtering copper, the substrate is placed in a sputtering vacuum chamber, the vacuum pressure range is 0.7Pa, nitrogen is used as the reaction gas, argon is used as the sputtering gas, and the copper layer is sputtered on the surface of the carrier substrate and the through-holes, the copper target power supply power is 25KW, and the sputtering time is 30min; after the sputtering is completed, the pressure in the vacuum chamber is balanced with the atmospheric pressure, and the vacuum chamber temperature is reduced to 50°C. The sputtered copper thickness is 10μm.

[0044] Pressed dry film: Pressed dry film treatment is performed on the upper and lower surfaces of the product; in the pressed dry film, the upper and lower surfaces of the product are pressed dry film treated, and a pressed dry film machine is used to apply the upper and lower dry films to the contact surface and the welding surface of the carrier product. The pressed dry film temperature is 120°C, the pressure is 0.5MPa, and the pressed dry film speed is 10m / min.

[0045] Exposure: Expose the upper and lower sides of the product at the same time; in the exposure, after the film and the product are accurately aligned in the exposure machine, the pattern on the film is irradiated on the material through vacuum suction and ultraviolet irradiation. Expose the upper and lower sides of the product at the same time (the exposed part is the non-graphic area), the exposure energy is measured by a 41-grid exposure ruler, the upper exposure light energy is 25 grids, and the exposure speed is 3m / min.

[0046] Development: Use a weak alkaline solution to dissolve the dry film in the graphic area of ​​the material to expose the graphic; in the development, use the weak alkalinity of the sodium carbonate aqueous solution to dissolve the dry film in the position not irradiated by ultraviolet rays (graphic area), leak out the graphic, and retain the dry film in the position irradiated by ultraviolet rays (non-graphic area); the concentration of the sodium carbonate solution is 15g / L, the development temperature is 35°C, and the development speed is 6m / min.

[0047] Copper electroplating: electroplating process is performed in the graphic area; the copper electroplating process is performed in the graphic area of ​​the product using electroplating technology, the electroplating solution is a copper sulfate solution, the concentration range is 80g / L, the liquid temperature is 35°C, the current is 6ASD, the time is 50min, and the electroplated copper thickness is 35μm.

[0048] Stripping: The exposed dry film is stripped; in the stripping, the exposed dry film is stripped with an alkaline solution of sodium hydroxide, the concentration is 40 g / L, the stripping temperature is 60° C., and the stripping speed is 6 m / min.

[0049] Micro-etching: micro-etching away the sputtered copper in the non-patterned area; in the micro-etching, dilute sulfuric acid is used as a micro-etching liquid to micro-etch the product to micro-etch away the sputtered copper in the non-patterned position, the micro-etching speed is 7m / min, and the micro-etching liquid concentration is 40ml / L.

[0050] Electroplating: gold plating treatment is performed; in the electroplating, the contact surface of the product is gold-plated, the plating solution uses Deli neutral gold plating solution or other finished electroplating solution, heated to 50°C, and electroplated at a current density of 0.3ASD for 8S; soft gold electroplating is performed on the pressure welding surface, the plating solution uses Deli neutral gold plating solution or other finished electroplating solution, the product is connected to the cathode of the DC power supply, and the platinum titanium mesh is used as the anode to electroplate the pressure welding surface of the product, heated to 70°C, and electroplated at a current density of 6ASD for 15S.

[0051] Cutting: Cut the product into pieces with a width of 35 cm using cutting equipment.

[0052] Comparative Example Punching: Use a substrate with glue to punch holes in the substrate to obtain through holes; in the punching, use a punching device to punch holes in the substrate to obtain through holes, the punching speed is 260SPM, and the air pressure is 6Kg / cm 2 .

[0053] Copper lamination: Use a copper lamination machine to laminate 35μm copper foil onto the surface of the substrate. The copper lamination roller temperature is 120°C, the copper lamination pressure is 0.4MPa, and the speed is 6m / min. Curing: Put the copper foil-attached substrate into the oven for curing at 160℃ for 2h. Copper deposition: The solidified material is chemically cleaned to remove the oxide layer on the surface, and then treated in a chemical reagent containing colloidal palladium ions to deposit conductive ions on the surface of the substrate. Copper deposition is carried out in a chemical copper deposition solution at a temperature of 70°C to form a seed layer, which serves as the basis for subsequent copper electroplating.

[0054] Electroplating copper: The substrate after copper deposition is conductive. After degreasing and activation, copper is electroplated in a copper sulfate electroplating solution with a copper ion concentration of 50g / L through an electroplating process to plate a 12μm copper layer on the surface of the substrate to complete the conduction of the hole.

[0055] Pressed dry film: Pressed dry film treatment is performed on the upper and lower surfaces of the product; in the pressed dry film, the upper and lower surfaces of the product are pressed dry film treated, and a pressed dry film machine is used to apply the upper and lower dry films to the contact surface and the welding surface of the carrier product. The pressed dry film temperature is 120°C, the pressure is 0.5MPa, and the pressed dry film speed is 10m / min.

[0056] Exposure: Expose the upper and lower sides of the product at the same time; in the exposure, after the film and the product are accurately aligned in the exposure machine, the pattern on the film is irradiated on the material through vacuum suction and ultraviolet irradiation. Expose the upper and lower sides of the product at the same time (the exposed part is the pattern area), the exposure energy is measured by a 41-grid exposure ruler, the upper exposure light energy is 25 grids, and the exposure speed is 3m / min.

[0057] Development: Use a weak alkaline solution to dissolve the unexposed dry film, the concentration of sodium carbonate solution is 15g / L, the development temperature is 35°C, and the development speed is 6m / min.

[0058] Etching: The copper exposed after development is dissolved and corroded with acid copper chloride. The specific gravity of the acid copper chloride solution is 1.4g / cm3, the etching temperature is 60℃, and the etching speed is 6m / min.

[0059] Stripping: Use the strong alkalinity of NaOH solution to strip the exposed dry film. The concentration of NaOH solution is 35g / L, the temperature is 60℃, and the stripping speed is 6m / min.

[0060] Electroplating: gold-plating the product; in the electroplating, the contact surface of the product is gold-plated, the plating solution uses Deli neutral gold plating solution or other finished electroplating solution, heated to 50°C, and electroplated at 0.3ASD current density for 8S; soft gold electroplating is performed on the pressure welding surface, the plating solution uses Deli neutral gold plating solution or other finished electroplating solution, the product is connected to the cathode of the DC power supply, and the platinum titanium mesh is used as the anode to electroplate the pressure welding surface of the product, heated to 70°C, and electroplated at 6ASD current density for 15S.

[0061] Cutting: Cut the product into pieces with a width of 35 cm using cutting equipment.

[0062] Reference Figure 2 In this application, the utilization rate of copper can reach more than 90%, while the utilization rate of copper in through-hole products produced using copper deposition technology is only about 40%, which saves resources and reduces waste of resources, which is beneficial to environmental protection.

[0063] Reference Figure 3 In this application, the bonding strength between copper and the substrate using the sputtering copper process can reach more than 1.2N / mm, while the bonding strength between copper and the substrate of the through-hole product produced using the copper deposition technology can only reach about 0.6N / mm. Compared with the traditional copper deposition process, the bonding strength between copper and the substrate using the sputtering copper process is improved by at least 100%.

[0064] The above descriptions are only optional embodiments of the present invention, and are not intended to limit the patent scope of the present invention. All equivalent structural changes made using the contents of the present invention specification under the inventive concept of the present invention, or direct / indirect applications in other related technical fields are included in the patent protection scope of the present invention.

Claims

1. Method for making environmentally friendly IC carrier tape conduction products, It is characterized in that The steps include: Stamping: Punching the substrate to obtain through holes; Sputtering copper: The substrate surface and through-holes are treated with sputtering copper; Pressing dry film: Pressing dry film treatment on the upper and lower sides of the product; Exposure: Expose both the upper and lower sides of the product at the same time; Development: Use a weak alkaline solution to dissolve the dry film in the graphic area of ​​the product to expose the graphic; Electroplating copper: Electroplating process is performed on the graphic area; Stripping: Stripping the exposed dry film; Micro-etching: Micro-etching away the sputtered copper in non-patterned areas; Electroplating: gold plating; Cutting: Cut the product into pieces.

2. The method for manufacturing the environmentally friendly IC carrier tape conductive product according to claim 1, It is characterized in that In the punching process, a punching device is used to punch holes in the substrate to obtain through holes. The punching speed is 235 SPM to 260 SPM and the air pressure is 4 Kg / cm 2 ~6Kg / cm 2 .

3. The method for manufacturing the environmentally friendly IC carrier tape conductive product according to claim 1, It is characterized in that In the copper sputtering, a substrate is placed in a sputtering vacuum chamber, the vacuum pressure range is 0.4Pa-0.7Pa, nitrogen is used as a reaction gas, argon is used as a sputtering gas, a copper layer is sputtered on the surface of the substrate and the through hole, the power range of the copper target power supply is 10KW-25KW, and the sputtering time range is 10min-30min; after the sputtering is completed, the pressure in the vacuum chamber is balanced with the atmospheric pressure, and the temperature of the vacuum chamber is reduced to 25°C-50°C.

4. The method for manufacturing the environmentally friendly IC carrier tape conductive product according to claim 1 or 3, It is characterized in that The sputtered copper thickness ranges from 5μm to 10μm.

5. The method for manufacturing the environmentally friendly IC carrier tape conductive product according to claim 1, It is characterized in that In the dry film pressing process, the upper and lower surfaces of the product are subjected to dry film pressing, and the upper and lower dry films are applied to the product contact surface and the welding surface using a dry film pressing machine. The dry film pressing temperature is 95°C to 120°C, the pressure range is 0.1MPa to 0.5MPa, and the dry film pressing speed is 4m / min to 10m / min.

6. The method for manufacturing the environmentally friendly IC carrier tape conductive product according to claim 1, It is characterized in that During the exposure, after the film and the product are accurately aligned in the exposure machine, the pattern on the film is irradiated onto the product through vacuum suction and ultraviolet irradiation.

7. The method for manufacturing the environmentally friendly IC carrier tape conductive product according to claim 1, It is characterized in that In the development, the weak alkalinity of the sodium carbonate aqueous solution is used to dissolve the dry film at the position not irradiated by ultraviolet rays, thereby exposing the pattern and retaining the dry film at the position irradiated by ultraviolet rays; The concentration of sodium carbonate solution is 5g / L~15g / L, the developing temperature is 25℃~35℃, and the developing speed is 4m / min~6m / min.

8. The method for manufacturing the environmentally friendly IC carrier tape conductive product according to claim 1, It is characterized in that The copper electroplating process is performed on the graphic area of ​​the product using electroplating technology, the electroplating solution is a copper sulfate solution, the concentration range is 60g / L~80g / L, the liquid temperature range is 20℃~35℃, the current range is 1ASD~6ASD, the time range is 30min~50min, and the electroplated copper thickness range is 25μm~35μm.

9. The method for manufacturing the environmentally friendly IC carrier tape conductive product according to claim 1, It is characterized in that In the film stripping, a sodium hydroxide alkaline solution is used to strip the exposed dry film, the concentration range is 25g / L~40g / L, the film stripping temperature range is 50℃~60℃, and the film stripping speed range is 4m / min~6m / min.

10. The method for manufacturing the environmentally friendly IC carrier tape conductive product according to claim 1, It is characterized in that In the micro-etching, dilute sulfuric acid is used as a micro-etching liquid to micro-etch the product, and the sputtered copper in the non-pattern position is micro-etched away. The micro-etching speed is 5m / min~7m / min, and the concentration range of the micro-etching liquid is 20ml / L~40ml / L.

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