Seeding control method, single crystal furnace, storage medium and program product

Abstract

The embodiment of the invention provides a seeding control method, a single crystal furnace, a storage medium and a program product, and relates to the technical field of single crystal manufacturing, the method comprises the following steps: obtaining a temperature adjustment parameter in a temperature adjustment stage and a seeding pulling rate when the fine grain length is a preset length; the temperature adjusting parameters comprise temperature adjusting power and temperature adjusting duration; on the basis of the seeding pulling speed and a target seeding pulling speed, compensation heat of the seeding stage is obtained; power adjustment parameters are obtained according to the compensation heat and the temperature adjustment parameters, and the power adjustment parameters comprise a power adjustment value and adjustment duration; and adjusting the seeding power based on the power adjustment parameter. According to the method, the yield of the single crystals can be effectively improved.

Description

Technical Field

[0001] The present application relates to the technical field of single crystal manufacturing, and in particular to a seeding control method, a single crystal furnace, a storage medium and a program product. Background Art

[0002] The Czochralski Method (CZ method) is a common technology for preparing single crystal silicon. In the process of manufacturing single crystal silicon by the CZ method, the seeding speed is a key factor that determines the success of single crystal silicon manufacturing. At present, the seeding speed is determined by the seeding power and the power change in the temperature adjustment stage, and the error tolerance of the seeding speed adjustment is low. Summary of the invention

[0003] The embodiments of the present application provide a seeding control method, a single crystal furnace, a storage medium and a program product, which can effectively improve the fault tolerance of seeding pulling speed adjustment.

[0004] In a first aspect, an embodiment of the present application provides a seeding control method, comprising:

[0005] Acquire the temperature adjustment parameters in the temperature adjustment stage and the seeding speed when the length of the thin crystal is a preset length; the temperature adjustment parameters include the temperature adjustment power and the temperature adjustment duration;

[0006] Based on the seeding pulling speed and the target seeding pulling speed, obtaining compensation heat in the seeding stage;

[0007] According to the compensation heat and the temperature adjustment parameter, a power adjustment parameter is obtained, wherein the power adjustment parameter includes a power adjustment value and an adjustment duration;

[0008] The seeding power is adjusted based on the power adjustment parameter.

[0009] In some embodiments, obtaining the compensation heat in the seeding stage based on the seeding pulling speed and the target seeding pulling speed includes:

[0010] Obtaining a temperature compensation value of the melt in the single crystal furnace according to a difference between the seeding pulling speed and the target seeding pulling speed;

[0011] Obtaining initial compensation heat according to the temperature compensation value, melt mass and specific heat capacity;

[0012] The compensating heat is obtained according to the initial compensating heat and the heat loss; the heat loss is the heat lost in the process of transferring the initial compensating heat to the melt.

[0013] In some embodiments, obtaining a power adjustment parameter according to the compensation heat includes:

[0014] The compensation heat and the temperature adjustment parameters are input into a power prediction model to obtain a power adjustment parameter output by the power prediction model; the power prediction model is obtained by training based on the temperature adjustment parameters and historical compensation heat in the historical temperature adjustment stage.

[0015] In some embodiments, the method further comprises:

[0016] Obtaining a heat loss coefficient; the heat loss coefficient is related to the temperature of the melt, the heating temperature of the single crystal furnace, and the contact area between the single crystal furnace and the melt;

[0017] The heat loss is determined according to the initial compensation heat and the heat loss coefficient.

[0018] In some embodiments, adjusting the seeding power based on the power adjustment parameter includes:

[0019] Based on the preset time node and the power adjustment parameter, determine a target time node for adjusting the seeding power from a plurality of time nodes supporting parameter adjustment in the seeding stage, as well as a target power and duration at the target time node;

[0020] At the target time node, the seeding power is adjusted to the target power and the adjustment time is maintained.

[0021] In some embodiments, the method further comprises:

[0022] After the adjustment time, the target power is adjusted to the seeding power.

[0023] In some embodiments, the method further comprises:

[0024] Obtaining a lower limit value and an upper limit value of the seeding pulling speed; the lower limit value and the upper limit value are determined based on the growth rate of the crystal and the growth rate of the dislocation during the crystal growth process;

[0025] The target seeding pulling speed is determined according to the lower limit value and the upper limit value.

[0026] In a second aspect, an embodiment of the present application provides a seeding control device, comprising:

[0027] A first acquisition module is used to acquire the temperature adjustment parameters in the temperature adjustment stage and the seeding speed when the length of the thin crystal is a preset length; the temperature adjustment parameters include the temperature adjustment power and the temperature adjustment duration;

[0028] A second acquisition module is used to acquire the compensation heat in the seeding stage based on the seeding pulling speed and the target seeding pulling speed;

[0029] A processing module, configured to obtain a power adjustment parameter according to the compensation heat and the temperature adjustment parameter, wherein the power adjustment parameter includes a power adjustment value and an adjustment duration;

[0030] A control module is used to adjust the seeding power based on the power adjustment parameter.

[0031] In a third aspect, the present application provides a single crystal furnace, including a furnace body and a control system;

[0032] The control system includes: a memory and a processor;

[0033] The memory is used to store computer instructions; the processor is used to execute the computer instructions stored in the memory to implement any method in the first aspect.

[0034] In a fourth aspect, the present application provides a computer-readable storage medium having a computer program stored thereon, and the computer program is executed by a processor to implement any one of the methods in the first aspect.

[0035] In a fifth aspect, the present application provides a computer program product, comprising a computer program, which implements any one of the methods in the first aspect when executed by a processor.

[0036] The seeding control method, single crystal furnace, storage medium and program product provided in the embodiments of the present application are obtained by obtaining the temperature adjustment parameters in the temperature adjustment stage and the seeding pulling speed when the fine crystal length is a preset length; the temperature adjustment parameters include the temperature adjustment power and the temperature adjustment duration; based on the seeding pulling speed and the target seeding pulling speed, the compensation heat in the seeding stage is obtained; according to the compensation heat and the temperature adjustment parameters, the power adjustment parameters are obtained, and the power adjustment parameters include the power adjustment value and the adjustment duration; the seeding power is adjusted based on the power adjustment parameters. Through the above method, the abnormal seeding pulling speed caused by the control deviation in the temperature adjustment stage can be reduced, thereby improving the fault tolerance of single crystal manufacturing, reducing the dependence on personnel experience, and improving the yield rate of single crystals. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 A schematic diagram of a scenario provided for an embodiment of the present application;

[0038] Figure 2 A schematic diagram of a seeding control method provided in an embodiment of the present application Figure 1 ;

[0039] Figure 3 A schematic diagram of a seeding control method provided in an embodiment of the present application Figure 2 ;

[0040] Figure 4 A schematic diagram of the structure of a seeding control device provided in an embodiment of the present application;

[0041] Figure 5 A schematic diagram of the structure of a single crystal furnace provided in an embodiment of the present application. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0043] In the embodiments of the present application, words such as "first" and "second" are used to distinguish the same or similar items with substantially the same functions and effects, and do not limit their order. Those skilled in the art can understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit them to be different.

[0044] It should be noted that in the embodiments of the present application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0045] In addition, the terms "including" and "having" and any variations thereof are intended to cover but not exclude inclusion, for example, a product or device comprising a list of components is not necessarily limited to those components explicitly listed, but may include other components not explicitly listed or inherent to such products or devices.

[0046] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0047] First, the technical terms involved in the embodiments of the present application are briefly introduced:

[0048] 1. The CZ method is a common technology for preparing single crystal silicon. The basic steps include placing the raw polycrystalline silicon block into a quartz crucible, heating and melting it in a single crystal furnace, and then immersing a rod-shaped seed crystal (seed crystal) with a diameter of only 10 mm into the melt. By controlling the thermal field, the seed crystal is rotated and slowly pulled upward, and the silicon atoms in the melt will follow the silicon atom arrangement structure of the seed crystal to form regular crystals at the solid-liquid interface, thereby obtaining a single crystal. The CZ method for manufacturing single crystals can be divided into the steps of loading, heating the melt, temperature adjustment, seeding, shoulder release, shoulder rotation, equal diameter, and finishing.

[0049] 2. Dislocation, also known as differential arrangement, refers to an internal microscopic defect of a crystal material in materials science, that is, a local irregular arrangement of atoms (crystallographic defect). From a geometric point of view, dislocation is a line defect and can be regarded as the boundary between the slipped part and the non-slipped part of the crystal. Its existence has a great influence on the physical properties of the material, especially the mechanical properties.

[0050] In the related technology, in the process of manufacturing single crystals, after the heating of the melt (fusion) is completed, the temperature adjustment stage is entered. In the temperature adjustment stage, the fusion power of the single crystal furnace is reduced to lower the liquid temperature of the melted crystal. After a period of time, the power of the single crystal furnace will be increased to slow down the rate of decrease in liquid temperature. When the liquid temperature drops to the seeding temperature, the power of the single crystal furnace is adjusted to the preset seeding power, and then the seeding is started.

[0051] The seeding speed is a key factor in determining the success of single crystal silicon manufacturing. If the seeding speed is set unreasonably, the yield rate (also known as the survival rate) of the manufactured single crystal silicon will be low. At present, the seeding speed mainly depends on the temperature adjustment and seeding power setting in the adjustment stage. There is no point that can be adjusted in the seeding stage, which makes the error tolerance of the seeding speed low. At the same time, the temperature adjustment stage mainly relies on the experience of personnel for adjustment, which further reduces the error tolerance of the seeding speed, thereby affecting the yield rate of single crystal silicon.

[0052] In view of this, the embodiments of the present application provide a seeding control method, a single crystal furnace, a storage medium and a program product, which increase the fault tolerance of the temperature adjustment stage by adding control logic that affects the seeding pulling speed in the seeding stage, reduce dependence on personnel skills, and improve the yield rate of single crystal silicon.

[0053] The following specific embodiments are used to describe in detail the technical solution of the present application and how the technical solution of the present application solves the above technical problems. The following specific embodiments can be implemented independently or in combination with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0054] Figure 1 Schematic diagram of application scenarios of the embodiments of the present application, such as Figure 1As shown, it includes: single crystal production equipment 1 and control system 2.

[0055] The single crystal production equipment 1 may include a single crystal furnace and a crucible disposed in the single crystal furnace, and the single crystal furnace is used to heat the crucible.

[0056] The control system 2 is used to control the single crystal furnace to heat the crucible. In some embodiments, the control system 2 can also obtain the temperature in the crucible to adjust the power of the single crystal furnace to meet the temperature requirements of different stages of single crystal production.

[0057] In some embodiments, the single crystal production equipment 1 and the control system 2 may be integrated or separately arranged, and this application does not limit this.

[0058] Below Figure 1 The control system in is the execution body, and the seeding control method provided in the embodiment of the present application is explained.

[0059] Figure 2 Schematic diagram of the process of the seeding control method provided in the embodiment of the present application Figure 1 ,like Figure 2 As shown, including:

[0060] S201, obtaining temperature adjustment parameters in the temperature adjustment stage and a seeding speed when the length of the fine grain is a preset length; the temperature adjustment parameters include temperature adjustment power and temperature adjustment duration.

[0061] In some embodiments, as described above, the temperature adjustment stage includes lowering the liquid temperature with a lower power and slowing down the rate of liquid temperature drop with a higher power until the liquid temperature drops to the seeding temperature. Correspondingly, the temperature adjustment parameters may include the power and duration corresponding to each stage.

[0062] Fine crystals can refer to the process of leading out a section of crystals with smaller particle size after the seed crystal and the melt are fused during the crystal leading stage.

[0063] The control system can monitor and record the data of each stage in real time during the single crystal manufacturing process. After entering the seeding stage, when the fine crystal length is the preset length, the current seeding pulling speed is read, and the temperature adjustment parameters of the temperature adjustment stage are obtained from the recorded data. Among them, the preset length can be set based on actual needs, for example, 70 mm, 80 mm, etc., which is not limited in the embodiments of the present application.

[0064] S202: Based on the seeding pulling speed and the target seeding pulling speed, obtaining compensation heat in the seeding stage.

[0065] In some embodiments, during the crystal growth process, the dislocations of the seed crystal exist at a certain angle to the crystal growth direction. As the fine crystal grows, the dislocations are gradually removed from the fine crystal. To ensure the dislocation removal effect, the crystal growth rate V (SL) should usually be greater than the dislocation generation rate V (Disacution), which is reflected in the production process as the average seeding pulling speed is within an appropriate range.

[0066] In some embodiments, the target seeding pull speed can be determined based on the lower limit of the seeding pull speed and the upper limit of the seeding pull speed. For example, since V(SL) needs to be greater than V(Disacution), based on prior knowledge and the growth rate of dislocations, it can be determined that the lower limit of the seeding pull speed needs to be greater than or equal to 260 mm / hour, and based on the crystal growth formula, it can be known that the upper limit of the seeding pull speed is less than or equal to 340 mm / hour.

[0067] When the lower limit value of the seeding pull speed and the upper limit value of the seeding pull speed are determined, the target seeding pull speed can be determined between the upper limit value and the lower limit value. For example, the middle value of the upper limit value and the lower limit value, 300 mm / hour, is taken as the target seeding pull speed. It should be understood that the target seeding pull speed can also be determined between the upper limit value and the lower limit value based on actual needs, for example, 310 mm / hour, etc., which is not limited in the embodiments of the present application.

[0068] In some embodiments, when the target seeding pull speed and the seeding pull speed when the fine crystal length is a preset length are determined, the temperature compensation value of the melt in the single crystal furnace can be obtained according to the difference between the seeding pull speed and the target seeding pull speed; and the compensation heat can be obtained according to the temperature compensation value, the melt mass and the specific heat capacity.

[0069] Exemplarily, the temperature compensation value of the melt in the single crystal furnace may satisfy the following formula:

[0070] Tm=(V1-V) / 100

[0071] Wherein, Tm is the temperature compensation value, V1 is the seeding pulling speed when the fine grain length is the preset length, and V is the target seeding pulling speed.

[0072] The compensation heat can satisfy the following formula:

[0073] Q 补 =|Tm|*c*m

[0074] Where c is the specific heat and m is the mass of the melt.

[0075] S203: Obtain a power adjustment parameter according to the temperature adjustment parameter and the compensation heat, where the power adjustment parameter includes a power adjustment value and an adjustment duration.

[0076] In some embodiments, when the control system obtains the temperature adjustment parameter and the compensation heat, the power adjustment parameter may be determined based on a preset mapping relationship between the power adjustment parameter and the temperature adjustment parameter and the compensation heat.

[0077] Alternatively, the control system may input the temperature adjustment parameter and the compensation heat based on a pre-trained power prediction model to obtain the power adjustment parameter output by the power prediction model. Wherein, the power prediction model is obtained by training based on the temperature adjustment parameters and historical compensation heat of the historical temperature adjustment stage. Wherein, the historical compensation heat may refer to the compensation heat determined based on the historical seeding speed and the target seeding speed. The training method of the model may refer to the model training method in the prior art, which will not be repeated here.

[0078] S204, adjusting the seeding power based on the power adjustment parameter.

[0079] In some embodiments, when the control system obtains the power adjustment parameter, it can adjust the seeding power of the single crystal furnace from a preset power to a target power, where the target power is the sum of the preset seeding power and the power adjustment value, and control the single crystal furnace to continue heating at the target power for a time corresponding to the adjustment duration.

[0080] In some embodiments, after the adjustment time period ends, the control system can adjust the seeding power of the single crystal furnace back to the preset power.

[0081] The seeding control method provided in the embodiment of the present application is by obtaining the temperature adjustment parameters in the temperature adjustment stage and the seeding pulling speed when the fine crystal length is a preset length; the temperature adjustment parameters include the temperature adjustment power and the temperature adjustment duration; based on the seeding pulling speed and the target seeding pulling speed, the compensation heat in the seeding stage is obtained; according to the compensation heat and the temperature adjustment parameters, the power adjustment parameters are obtained, and the power adjustment parameters include the power adjustment value and the adjustment duration; the seeding power is adjusted based on the power adjustment parameters. By adding a power adjustment node in the seeding stage, thereby adjusting the seeding pulling speed, the abnormal seeding pulling speed caused by the control deviation in the temperature adjustment stage can be reduced, thereby improving the fault tolerance of single crystal manufacturing, reducing the dependence on personnel experience, and improving the yield rate of single crystals.

[0082] Based on the above embodiments, the seeding control method provided in the embodiments of the present application is further described below in combination with 3.

[0083] Figure 3 Schematic diagram of the process of the seeding control method provided in the embodiment of the present application Figure 2 ,like Figure 3 As shown, including:

[0084] S301, obtaining temperature adjustment parameters in the temperature adjustment stage and a seeding speed when the length of the fine grain is a preset length; the temperature adjustment parameters include temperature adjustment power and temperature adjustment duration.

[0085] The specific implementation method of S301 in the embodiment of the present application is Figure 2 The specific implementation method of S201 in the illustrated embodiment is similar and will not be repeated here.

[0086] S302: Based on the seeding pulling speed and the target seeding pulling speed, obtain compensation heat in the seeding stage.

[0087] In some embodiments, since part of the heat will be lost during the heat transfer process, the lost heat can be added when obtaining the compensating heat of the seeding stage, thereby improving the accuracy of the seeding stage control.

[0088] Exemplarily, the control system can obtain the temperature compensation value of the melt in the single crystal furnace according to the difference between the seeding pulling speed and the target seeding pulling speed; obtain the initial compensation heat according to the temperature compensation value, the melt mass and the specific heat capacity; obtain the compensation heat according to the initial compensation heat and heat loss; the heat loss is the heat lost in the process of transferring the initial compensation heat to the melt.

[0089] Wherein, the control system obtains the initial compensation heat in a manner similar to Figure 2 The method of obtaining the compensation heat in the illustrated embodiment is similar and will not be described in detail here.

[0090] The heat loss can be determined based on the following:

[0091] Exemplarily, a heat loss coefficient is obtained; the heat loss coefficient is related to the temperature of the melt, the heating temperature of the single crystal furnace, and the contact area between the single crystal furnace and the melt; the heat loss is determined based on the initial compensation heat and the heat loss coefficient.

[0092] Wherein, the heat loss coefficient may be determined based on historical single crystal production data.

[0093] Exemplarily, based on the historical seeding stage as an example, the control system can obtain the heating temperature of the single crystal furnace, the temperature of the melt, and the contact area between the single crystal furnace and the melt in the seeding stage, and determine the heat loss in the heat transfer process based on the following formula:

[0094] Q1=σ*ε*A*(Ts 4 -Tc 4 )

[0095] Wherein, σ is the Stephen constant, A is the contact area between the single crystal furnace and the melt, Ts is the heating temperature of the single crystal furnace, Tc is the temperature of the melt, and ε is the thermal emissivity.

[0096] After determining the heat loss, the heat loss coefficient can be obtained based on the ratio of the heat loss to the heat output of the single crystal furnace and recorded. Optionally, since the thermal field of the single crystal furnace is usually relatively fixed, the same heat loss coefficient can be used when producing single crystals in different batches.

[0097] When the control system obtains the heat loss coefficient, it can obtain the heat loss according to the product of the initial compensation heat and the heat loss coefficient, and use the sum of the heat loss and the initial compensation heat as the compensation heat.

[0098] In some embodiments, in order to further improve the accuracy of heat compensation, the control system may also obtain the seeding pulling speed in the following manner.

[0099] Exemplarily, taking the preset length as a reference, a length range is determined using preset range parameters; initial seeding pulling speeds corresponding to each fine crystal length within the length range are obtained; and an average of the initial seeding pulling speeds is used as the seeding pulling speed.

[0100] For example, if the preset length is 70 mm, 1 / 2 can be used as a range parameter to obtain a length range of 35 mm to 70 mm. The control system can obtain the initial seeding pull speed corresponding to each millimeter in the range of 35 mm to 70 mm, and use the average of all initial seeding pull speeds as the seeding pull speed. It should be understood that the range parameter can be set based on actual experience, for example, 1 / 3, etc., and the embodiment of the present application is not limited to this.

[0101] S303: Input the compensation heat and the temperature adjustment parameter into a power prediction model to obtain a power adjustment parameter output by the power prediction model.

[0102] In some embodiments, the power prediction model may be constructed and trained based on a neural network model.

[0103] The power prediction model is based on the input temperature control parameters and compensation heat, and outputs the power adjustment value and adjustment time.

[0104] In some embodiments, the relationship between power and temperature may satisfy the following formula:

[0105] Q=ΔP*Δt*k=|(T2-T1)|*c*m

[0106] Among them, Tm=T2-T1, ΔP is the power change, Δt is the duration, and k is the thermal conversion coefficient.

[0107] The control system can use the above-mentioned changing relationship between power and temperature as the basic mapping logic of the model, and use historical single crystal production data to produce sample data and label data to train the model.

[0108] S304. Based on the preset time node and the power adjustment parameter, determine a target time node for adjusting the seeding power from a plurality of time nodes supporting parameter adjustment in the seeding stage, as well as a target power and duration at the target time node.

[0109] In some embodiments, for the seeding stage, not every time point is suitable for power adjustment, for example, the seeding start stage and the seeding end stage. To ensure the accuracy of power adjustment, multiple time nodes that can be adjusted are pre-set in the embodiment of the present application. When the control system obtains the power adjustment parameter, it can use a preset allocation algorithm to determine the target time node for adjusting the seeding power from multiple time nodes that support parameter adjustment in the seeding stage, as well as the target power and duration at the target time node.

[0110] For example, the power adjustment parameters include a power adjustment amount p and a duration t. The power adjustment amount p and the duration t can be allocated to a first target time node and a second target time node. The power adjustment amount corresponding to the first target time node is p1, and the duration is t1. The power adjustment amount corresponding to the second target time node is p2, and the duration is t2.

[0111] The power adjustment amounts p, p1, p2 and durations t, t1, t2 may satisfy the following formula:

[0112] p1*t1+p2*t2=p*t

[0113] S305. At the target time node, adjust the seeding power to the target power and maintain the adjustment time.

[0114] S306: After the adjustment time, adjust the target power to the seeding power.

[0115] In some embodiments, when the control system determines a time node where power adjustment is required and an adjustment parameter at the time node, power adjustment can be performed based on the corresponding adjustment parameter when the time node arrives.

[0116] For example, when the first target time node arrives, the preset seeding power P is adjusted to P+p1, and the power is maintained for t1 time. After t1 time is over, the seeding power is adjusted back to P. When the second target time node arrives, the preset seeding power P is adjusted to P+p2, and the power is maintained for t2 time. After t2 time is over, the seeding power is adjusted back to P, which can speed up the pulling speed response.

[0117] To summarize, the crystal seeding method control method provided in the embodiment of the present application, by adding control nodes in the crystal seeding stage and adjusting the crystal seeding pulling speed by adjusting the power, can avoid the crystal seeding pulling speed depending only on the temperature adjustment stage and the crystal seeding power, thereby increasing the fault tolerance of the crystal seeding pulling speed control, reducing the dependence on personnel experience, and improving the yield rate of single crystals.

[0118] Based on the above embodiments, the embodiments of the present application also provide a seeding control device.

[0119] Figure 4 A schematic diagram of the structure of the seeding control device 40 provided in the embodiment of the present application is shown in FIG. Figure 4 As shown, including:

[0120] The first acquisition module 401 is used to acquire the temperature adjustment parameters in the temperature adjustment stage and the seeding speed when the length of the thin crystal is a preset length; the temperature adjustment parameters include the temperature adjustment power and the temperature adjustment duration.

[0121] The second acquisition module 402 is used to acquire the compensation heat in the seeding stage based on the seeding pulling speed and the target seeding pulling speed.

[0122] The processing module 403 is used to obtain a power adjustment parameter according to the compensation heat and the temperature adjustment parameter, where the power adjustment parameter includes a power adjustment value and an adjustment duration.

[0123] The control module 404 is used to adjust the seeding power based on the power adjustment parameter.

[0124] In some embodiments, the second acquisition module 402 is also used to obtain the temperature compensation value of the melt in the single crystal furnace according to the difference between the seeding pulling speed and the target seeding pulling speed; obtain the initial compensation heat according to the temperature compensation value, the melt mass and the specific heat capacity; obtain the compensation heat according to the initial compensation heat and heat loss; the heat loss is the heat lost in the process of transferring the initial compensation heat to the melt.

[0125] In some embodiments, the processing module 403 is also used to input the compensation heat and the temperature control parameters into a power prediction model to obtain the power adjustment parameters output by the power prediction model; the power prediction model is obtained by training based on the temperature control parameters and historical compensation heat of the historical temperature control stage.

[0126] In some embodiments, the second acquisition module 402 is also used to obtain a heat loss coefficient; the heat loss coefficient is related to the temperature of the melt, the heating temperature of the single crystal furnace, and the contact area between the single crystal furnace and the melt; the heat loss is determined based on the initial compensation heat and the heat loss coefficient.

[0127] In some embodiments, the control module 404 is also used to determine, based on a preset time node and the power adjustment parameters, a target time node for adjusting the seeding power from multiple time nodes supporting parameter adjustment in the seeding stage, as well as the target power and duration at the target time node; at the target time node, the seeding power is adjusted to the target power and the adjustment duration is maintained.

[0128] In some embodiments, the control module 404 is further configured to adjust the target power to the seeding power after the adjustment time.

[0129] In some embodiments, the second acquisition module 402 is also used to obtain the lower limit value and the upper limit value of the seeding pull speed; the lower limit value and the upper limit value are determined based on the growth rate of the crystal and the growth rate of the dislocation during the crystal growth process; according to the lower limit value and the upper limit value, the target seeding pull speed is determined.

[0130] The embodiment of the present application also provides a single crystal furnace.

[0131] Figure 5 The schematic diagram of the structure of the single crystal furnace 50 provided in the embodiment of the present application is as follows: Figure 5 As shown, the single crystal furnace may include: a furnace body and a control system.

[0132] The control system may include a transceiver 501 , a processor 502 , and a memory 503 .

[0133] The processor 502 executes the computer execution instructions stored in the memory, so that the processor 502 executes the scheme in the above embodiment. The processor 502 can be a general-purpose processor, including a central processing unit CPU, a network processor (network processor, NP), etc.; it can also be a digital signal processor DSP, an application-specific integrated circuit ASIC, a field programmable gate array FPGA or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components.

[0134] The memory 503 is connected to the processor 502 via a system bus and implements communication therebetween. The memory 503 is used to store computer program instructions.

[0135] The transceiver 501 can perform receiving data / instructions and sending data / instructions.

[0136] Optionally, the electronic device 50 may further include a communication interface, so that it can communicate and interact with an external or internal device through the communication interface 503. The external device may be, for example, a client (e.g., a mobile phone, a tablet). In a specific implementation, if the communication interface, the memory 503, and the processor 502 are implemented independently, the communication interface, the memory 503, and the processor 502 may be interconnected through a bus and communicate with each other.

[0137] The system bus can be a peripheral component interconnect (PCI) bus or an extended industry standard architecture (EISA) bus, etc. The system bus can be divided into an address bus, a data bus, a control bus, etc. For ease of representation, only one thick line is used in the figure, but it does not mean that there is only one bus or one type of bus. The transceiver is used to realize the communication between the database access device and other computers (such as clients, read-write libraries, and read-only libraries). The memory may include random access memory (RAM) and may also include non-volatile memory.

[0138] Optionally, in a specific implementation, if the communication interface, the memory 503 and the processor 502 are integrated on a chip, the communication interface, the memory 503 and the processor 502 can communicate through an internal interface.

[0139] An embodiment of the present application also provides a chip for running instructions, which is used to execute the technical solution executed by the above control system in the above embodiment.

[0140] A computer-readable storage medium is also provided in an embodiment of the present application, on which a computer program is stored. When the computer program is executed by a processor, the technical solution executed by the above-mentioned control system is implemented. The implementation principle and technical effect are similar and will not be repeated here.

[0141] In one possible implementation, a computer-readable medium may include a random access memory (RAM), a read-only memory (ROM), a compact disc read-only memory (CD-ROM) or other optical disk storage, a magnetic disk storage or other magnetic storage device, or any other medium that is intended to carry or store the required program code in the form of instructions or data structures and can be accessed by a computer. Moreover, any connection is appropriately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server or other remote source using a coaxial cable, a fiber optic cable, a twisted pair, a digital subscriber line (DSL) or wireless technologies such as infrared, radio and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL or wireless technologies such as infrared, radio and microwave are included in the definition of the medium. Disks and optical disks as used herein include optical disks, laser disks, optical disks, digital versatile disks (DVDs), floppy disks and Blu-ray disks, where disks usually reproduce data magnetically, while optical disks reproduce data optically using lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0142] A computer program product is also provided in an embodiment of the present application, including a computer program. When the computer program is executed by a processor, the technical solution executed by the above-mentioned control system is implemented. The implementation principle and technical effect are similar and will not be repeated here.

[0143] In the specific implementation of the above-mentioned terminal device or server, it should be understood that the processor can be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), etc. The general-purpose processor can be a microprocessor or the processor can be any conventional processor, etc. The steps of the method disclosed in the embodiments of the present application can be directly embodied as being executed by a hardware processor, or can be executed by a combination of hardware and software modules in the processor.

[0144] Those skilled in the art will appreciate that all or part of the steps of any of the above method embodiments may be completed by hardware associated with program instructions. The aforementioned program may be stored in a computer-readable storage medium, and when the program is executed, all or part of the steps of the above method embodiments are executed.

[0145] If the technical solution of the present application is implemented in the form of software and sold or used as a product, it can be stored in a computer-readable storage medium. Based on such an understanding, all or part of the technical solution of the present application can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including a computer program or several instructions. The computer software product enables a computer device (which can be a personal computer, a server, a network device, or a similar electronic device) to perform all or part of the steps of the method described in the embodiment of the present application.

[0146] It should be noted that, for the aforementioned method embodiments, for the sake of simplicity, they are all expressed as a series of action combinations, but those skilled in the art should be aware that the present application is not limited by the described order of actions, because according to the present application, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all optional embodiments, and the actions and modules involved are not necessarily required by the present application.

[0147] It should be further noted that, although the various steps in the flowchart are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless there is a clear description in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a portion of the steps in the flowchart may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these sub-steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a portion of the sub-steps or stages of other steps.

[0148] It should be understood that the above-mentioned device embodiments are only illustrative, and the device of the present application can also be implemented in other ways. For example, the division of units / modules in the above-mentioned embodiments is only a logical function division, and there may be other division methods in actual implementation. For example, multiple units, modules or components can be combined, or can be integrated into another system, or some features can be ignored or not executed.

[0149] In addition, unless otherwise specified, each functional unit / module in each embodiment of the present application may be integrated into one unit / module, each unit / module may exist physically separately, or two or more units / modules may be integrated together. The above-mentioned integrated unit / module may be implemented in the form of hardware or in the form of a software program module.

[0150] If the integrated unit / module is implemented in the form of hardware, the hardware may be a digital circuit, an analog circuit, etc. The physical implementation of the hardware structure includes but is not limited to transistors, memristors, etc. If not specifically stated, the processor may be any appropriate hardware processor, such as a CPU, a GPU, an FPGA, a DSP, an ASIC, etc. If not specifically stated, the storage unit may be any appropriate magnetic storage medium or magneto-optical storage medium, such as a resistive random access memory RRAM (Resistive Random Access Memory), a dynamic random access memory DRAM (Dynamic Random Access Memory), a static random access memory SRAM (Static Random-Access Memory), an enhanced dynamic random access memory EDRAM (Enhanced Dynamic Random Access Memory), a high-bandwidth memory HBM (High-Bandwidth Memory), a hybrid memory cube HMC (Hybrid Memory Cube), etc.

[0151] If the integrated unit / module is implemented in the form of a software program module and sold or used as an independent product, it can be stored in a computer-readable memory. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art or all or part of the technical solution, can be embodied in the form of a software product, which is stored in a memory and includes several instructions for a computer device (which can be a personal computer, a server or a network device, etc.) to perform all or part of the steps of the various embodiments of the present application. The aforementioned memory includes: U disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), mobile hard disk, disk or optical disk and other media that can store program codes.

[0152] In the above embodiments, the description of each embodiment has its own emphasis. For the part not described in detail in a certain embodiment, please refer to the relevant description of other embodiments. The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0153] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A seeding control method, characterized in that: include: Acquire the temperature adjustment parameters in the temperature adjustment stage and the seeding speed when the length of the thin crystal is a preset length; the temperature adjustment parameters include the temperature adjustment power and the temperature adjustment duration; Based on the seeding pulling speed and the target seeding pulling speed, obtaining compensation heat in the seeding stage; According to the compensation heat and the temperature adjustment parameter, a power adjustment parameter is obtained, wherein the power adjustment parameter includes a power adjustment value and an adjustment duration; The seeding power is adjusted based on the power adjustment parameter.

2. The method according to claim 1, characterized in that The step of obtaining the compensation heat in the seeding stage based on the seeding pulling speed and the target seeding pulling speed includes: Obtaining a temperature compensation value of the melt in the single crystal furnace according to a difference between the seeding pulling speed and the target seeding pulling speed; Obtaining initial compensation heat according to the temperature compensation value, melt mass and specific heat capacity; The compensating heat is obtained according to the initial compensating heat and the heat loss; the heat loss is the heat lost in the process of transferring the initial compensating heat to the melt.

3. The method according to claim 2, characterized in that The obtaining of the power adjustment parameter according to the compensation heat comprises: The compensation heat and the temperature adjustment parameters are input into a power prediction model to obtain a power adjustment parameter output by the power prediction model; the power prediction model is obtained by training based on the temperature adjustment parameters and historical compensation heat in the historical temperature adjustment stage.

4. The method according to claim 2, characterized in that: The method further comprises: Obtaining a heat loss coefficient; the heat loss coefficient is related to the temperature of the melt, the heating temperature of the single crystal furnace, and the contact area between the single crystal furnace and the melt; The heat loss is determined according to the initial compensation heat and the heat loss coefficient.

5. The method according to any one of claims 1 to 4, characterized in that: The step of adjusting the seeding power based on the power adjustment parameter includes: Based on the preset time node and the power adjustment parameter, determine a target time node for adjusting the seeding power from a plurality of time nodes supporting parameter adjustment in the seeding stage, as well as a target power and duration at the target time node; At the target time node, the seeding power is adjusted to the target power and the adjustment time is maintained.

6. The method according to claim 5, characterized in that The method further comprises: After the adjustment time, the target power is adjusted to the seeding power.

7. The method according to claim 6, characterized in that The method further comprises: Obtaining a lower limit value and an upper limit value of the seeding pulling speed; the lower limit value and the upper limit value are determined based on the growth rate of the crystal and the growth rate of the dislocation during the crystal growth process; The target seeding pulling speed is determined according to the lower limit value and the upper limit value.

8. A single crystal furnace, characterized in that: It includes a furnace body and a control system, and the control system includes: Memory for storing computer programs; A processor, configured to execute the computer program to implement the method according to any one of claims 1 to 7.

9. A computer-readable storage medium, characterized in that: A computer program is stored thereon, and the computer program is executed by a processor to implement the method according to any one of claims 1 to 7.

10. A computer program product, characterized in that The invention comprises a computer program, which implements the method according to any one of claims 1 to 7 when being executed by a controller.

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