Substrate processing apparatus

Abstract

The invention relates to a substrate processing device. The substrate processing device comprises a reaction chamber, a supporting part and a first ventilation mechanism, the supporting part is arranged in the reaction chamber and is used for supporting and fixing a substrate; on one hand, the output airflow of the first ventilation part is obliquely blown, the air speed is controlled, and the Bernoulli principle is utilized, so that negative pressure can be formed above the upper surface of the substrate and the magnitude of the negative pressure is adjusted, so that solvent water vapor in the environment above the substrate flows towards the periphery of the reaction chamber, and the amount of the solvent water vapor and particles brought to the upper surface of the substrate can be reduced; therefore, defects formed on the upper surface of the substrate and diffusion can be avoided as much as possible; on the other hand, the first ventilation area is located in the area outside the upper surface of the substrate, so that output airflow of the first ventilation part cannot hit the upper surface of the substrate, the amount of solvent water vapor and particles brought to the upper surface of the substrate can be reduced, defects formed on the upper surface of the substrate can be avoided as much as possible, and diffusion is avoided; and the processing quality of the substrate can be improved.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor equipment, and in particular to a substrate processing device. Background Art

[0002] Various processes such as photolithography, etching, ashing, thin film deposition and cleaning are performed to manufacture semiconductor devices or flat panel display panels, and these processes are performed in a process chamber. Among them, the photolithography process includes providing a photoresist to a substrate to form a photoresist film on the surface of the substrate, exposing the photoresist film using a photomask, and then providing a developer to selectively remove a portion of the photoresist film.

[0003] In the related art, during the processing, the substrate is fixed on the electrostatic chuck and rotates with the electrostatic chuck, so that the processing liquid sprayed on its surface is evenly spread. At the same time, the ventilation mechanism arranged on the electrostatic chuck ventilates toward the entire surface of the electrostatic chuck, and the particulate contaminants in the area above the substrate are swept away by the airflow, so as to prevent the contaminants from contacting the substrate surface and causing product quality defects.

[0004] However, if there is condensation on the surface of the substrate during processing, or if there is an increase in particles in the later stage of the machine maintenance cycle, these conditions will cause special outward-radiating defects to form on the surface of the substrate, causing defects in a larger area of ​​the substrate and yield loss. Summary of the invention

[0005] Based on this, it is necessary to overcome the defects of the prior art and provide a substrate processing device that can minimize the amount of water vapor in the environment above the substrate surface brought into the substrate surface, thereby improving the substrate processing quality.

[0006] A substrate processing device, comprising:

[0007] a reaction chamber;

[0008] a supporting portion, the supporting portion being disposed inside the reaction chamber and being used to support and fix a substrate; and

[0009] A first ventilation mechanism, wherein the first ventilation mechanism is arranged inside the reaction chamber and is located above the support portion, the first ventilation mechanism comprises at least one first ventilation portion located directly above the support portion, the projection of the first ventilation portion is located on the upper surface of the substrate, the gas outlet direction of the first ventilation portion is arranged at an angle to the upper surface of the substrate, the surface where the upper surface of the substrate is located is set as a reference surface, the area where the output gas flow of the first ventilation portion intersects with the reference surface is set as a first ventilation zone, and the first ventilation zone is located outside the upper surface of the substrate.

[0010] In one of the embodiments, the first ventilation area is arranged around the circumference of the substrate, and a gap is provided between an inner edge of the first ventilation area and an edge of the upper surface of the substrate.

[0011] In one embodiment, the size of the gap is at least 1 mm.

[0012] In one embodiment, the gap is 2mm-20mm.

[0013] In one embodiment, the first vent portion includes a first vent opening circumferentially arranged around a central axis of the reaction chamber.

[0014] In one embodiment, the first ventilation portion includes a plurality of first ventilation holes sequentially arranged circumferentially around the central axis of the reaction chamber; and / or the first ventilation portion includes a plurality of first gas outlet nozzles sequentially arranged circumferentially around the central axis of the reaction chamber.

[0015] In one embodiment, each of the first ventilation holes is arranged at equal intervals; each of the first air outlet nozzles is arranged at equal intervals.

[0016] In one embodiment, the first ventilation mechanism also includes at least one second ventilation portion located above the supporting portion, the projection of the second ventilation portion is located in an area outside the upper surface of the substrate, and the area where the output airflow of the second ventilation portion intersects with the reference surface is set as a second ventilation zone, and the second ventilation zone is located in an area outside the upper surface of the substrate.

[0017] In one embodiment, the second vent portion comprises a second vent opening circumferentially arranged around the central axis of the reaction chamber; and / or,

[0018] The second ventilation portion includes a plurality of second ventilation holes sequentially arranged in a circumferential direction around the central axis of the reaction chamber; and / or,

[0019] The second vent portion includes a plurality of second gas outlet nozzles sequentially arranged in a circumferential direction around a central axis of the reaction chamber.

[0020] In one of the embodiments, the substrate processing device also includes a second ventilation mechanism arranged inside the reaction chamber; the second ventilation mechanism is located above the support portion, the second ventilation mechanism includes at least one third ventilation portion located directly above the support portion, the projection of the third ventilation portion is located in the middle part of the upper surface of the substrate, the gas outlet direction of the third ventilation portion is opposite to the middle part of the upper surface of the substrate, and the first ventilation portion is arranged around the circumference of the third ventilation portion.

[0021] In one of the embodiments, the substrate processing device further includes a suction mechanism disposed inside the reaction chamber; the suction mechanism is located above the support portion, and the suction mechanism is arranged adjacent to the second ventilation mechanism.

[0022] In one embodiment, the substrate processing device further comprises a filter, wherein the filter is respectively connected to the suction mechanism and the second ventilation mechanism, and the filter covers each suction part of the suction mechanism and each third ventilation part of the second ventilation mechanism.

[0023] In one embodiment, the suction mechanism is arranged around the circumference of the second ventilation mechanism; the first ventilation mechanism is arranged around the circumference of the suction mechanism, and a gap is provided between the first ventilation mechanism and the suction mechanism.

[0024] In one embodiment, the third vent portion comprises a third vent opening circumferentially arranged around the central axis of the reaction chamber; and / or,

[0025] The third ventilation portion includes a plurality of third ventilation holes sequentially arranged in a circumferential direction around the central axis of the reaction chamber; and / or the third ventilation portion includes a plurality of third gas outlet nozzles sequentially arranged in a circumferential direction around the central axis of the reaction chamber.

[0026] In one of the embodiments, the substrate processing device further comprises a photoresist collection cup disposed inside the reaction chamber, and the photoresist collection cup is disposed around the circumference of the support portion;

[0027] The substrate processing device further comprises a first nozzle located inside the reaction chamber, the first nozzle is located above the substrate, and the first nozzle is used to communicate with a photoresist storage container;

[0028] The substrate processing device further comprises a rotating motor connected to the supporting part, and the rotating motor is used to drive the supporting part to rotate;

[0029] The substrate processing device further comprises a second nozzle located inside the reaction chamber, the second nozzle is located below the substrate, and the second nozzle is used to spray a cleaning agent onto the lower surface of the substrate;

[0030] The substrate processing device further comprises a liquid blocking member located inside the reaction chamber, the liquid blocking member being arranged around the circumference of the support portion, and the liquid blocking member being used to guide the cleaning agent sprayed from the second nozzle to the inner wall of the photoresist collecting cup.

[0031] In the above-mentioned substrate processing device, since the projection of the first vent is located on the upper surface of the substrate, the outlet direction of the first vent is set at an angle with the upper surface of the substrate, and the first ventilation area is located in the area outside the upper surface of the substrate. In this way, on the one hand, the output airflow of the first vent is blown obliquely to control the wind speed. By utilizing the Bernoulli principle, a negative pressure can be formed above the upper surface of the substrate and the size of the negative pressure can be adjusted, so that the solvent vapor in the environment above the substrate flows toward the surroundings of the reaction chamber, thereby reducing the amount of solvent vapor and particles brought to the upper surface of the substrate, thereby avoiding the formation and diffusion of defects on the upper surface of the substrate as much as possible; on the other hand, the first ventilation area is located in the area outside the upper surface of the substrate, so that the output airflow of the first vent will not hit the upper surface of the substrate, thereby reducing the amount of solvent vapor and particles brought to the upper surface of the substrate, thereby avoiding the formation and diffusion of defects on the upper surface of the substrate as much as possible, thereby improving the processing quality of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a structural schematic diagram of a substrate processing device in the related art.

[0033] Figure 2 for Figure 1 The structure shown is a schematic diagram of a structure in which a ring-shaped defect is present on the surface of the substrate.

[0034] Figure 3 for Figure 1 The structure shown is a schematic diagram of a structure in which the substrate surface presents an outward-emitting defect.

[0035] Figure 4 It is a structural schematic diagram of a substrate processing device according to an embodiment of the present application.

[0036] Figure 5 It is a structural schematic diagram of a substrate processing device according to another embodiment of the present application.

[0037] 110, ventilation mechanism; 120, substrate; 130, support portion;

[0038] 210, reaction chamber; 220, support part; 230, first ventilation mechanism; 231, first ventilation part; 232, second ventilation part; 240, substrate; 250, second ventilation mechanism; 251, third ventilation part; 260, suction mechanism; 270, photoresist collection cup; 280, rotating motor; 291, second nozzle; 292, liquid blocking member. DETAILED DESCRIPTION

[0039] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0040] It should be noted that the substrate in this embodiment can be a semiconductor wafer at any stage in the process of forming semiconductor components on the substrate, such as integrated circuits or discrete devices. In one embodiment, the substrate includes a very low dielectric constant dielectric layer and a metal layer on a semiconductor substrate. The substrate can be a mask, a semiconductor wafer, or other workpieces known to ordinary technicians in the field of electronic component manufacturing. In at least some embodiments, the substrate includes any material used to manufacture any integrated circuit, passive (e.g., capacitors, inductors) and active (e.g., transistors, photodetectors, lasers, diodes) microelectronic components. The substrate can include insulating materials (e.g., dielectric materials) that separate such active and passive microelectronic components from one or more conductive layers formed on top of them. In one embodiment, the substrate is a semiconductor substrate including one or more dielectric layers, such as silicon, gallium nitride, gallium arsenide, silicon dioxide, silicon nitride, sapphire, and other dielectric materials. In one embodiment, the substrate is a wafer stack including one or more layers. The one or more layers of the wafer may include conductive layers, semiconductive layers, insulating layers, or any combination thereof.

[0041] As described in the background technology, in the related art, there is water vapor condensation on the surface of the substrate during the processing process, or the particles increase in the later stage of the machine maintenance cycle. In these cases, the surface of the substrate will form outward divergent defects, causing defects in a larger area of ​​the substrate and yield loss. The inventor has found that the reason for this problem is that, please refer to Figure 1 , Figure 1 FIG. 1 shows a schematic structural diagram of a substrate processing device in the related art. Figure 1 The dotted arrow in the middle shows the airflow direction of the ventilation mechanism. The airflow swept downward by the ventilation mechanism 110 first flows to the surface of the substrate 120, and then flows along the surface of the substrate 120 toward the edge of the substrate 120. The airflow will bring the water vapor solvent in the environment above the substrate 120 to the surface of the substrate 120, and condense the water vapor on the surface of the substrate 120, so that the surface of the substrate 120 appears as follows. Figure 2 The annular defect shown in FIG. 1 and the increase of particles in the later period of the machine maintenance cycle cause the substrate 120 surface to form a Figure 3The outward-radiating defects shown in will cause defects in a larger area of ​​the substrate 120 and yield loss.

[0042] Based on the above reasons, the present application provides a substrate processing device, which can minimize the amount of water vapor in the environment above the substrate surface brought into the substrate surface, thereby improving the quality of substrate processing.

[0043] See also Figure 4 or Figure 5 , Figure 4 A schematic structural diagram of a substrate processing device according to an embodiment of the present application is shown. Figure 5 A schematic structural diagram of a substrate processing device according to an embodiment of the present application is shown. A substrate processing device provided in an embodiment of the present application comprises: a reaction chamber 210, a support portion 220 and a first ventilation mechanism 230. The support portion 220 is disposed inside the reaction chamber 210, and the support portion 220 is used to support and fix the substrate 240. The first ventilation mechanism 230 is disposed inside the reaction chamber 210, and the first ventilation mechanism 230 is located above the support portion 220, and the first ventilation mechanism 230 includes at least one first ventilation portion 231 located directly above the support portion 220. The projection of the first ventilation portion 231 is located on the upper surface of the substrate 240, and the gas outlet direction of the first ventilation portion 231 (such as Figure 4 or Figure 5 ) and the upper surface of the substrate 240 at an angle (as shown by the arrow in the middle) Figure 4 The upper surface of the substrate 240 is set as the reference surface. In other words, the reference surface is a plane coplanar with the upper surface of the substrate 240. The area where the output airflow of the first vent 231 intersects with the reference surface is set as the first vent area, and the first vent area is located outside the upper surface of the substrate 240.

[0044] In the above-mentioned substrate processing device, since the projection of the first vent 231 is located on the upper surface of the substrate 240, the outlet direction of the first vent 231 is arranged at an angle with the upper surface of the substrate 240, and the first ventilation area is located outside the upper surface of the substrate 240, on the one hand, the output airflow of the first vent 231 is blown obliquely to control the wind speed, and by using the Bernoulli principle, a negative pressure can be formed above the upper surface of the substrate 240 and the size of the negative pressure can be adjusted, so that the solvent water vapor in the environment above the substrate 240 flows toward the surroundings of the reaction chamber 210, Thereby, the amount of solvent vapor and particles brought to the upper surface of the substrate 240 can be reduced, thus avoiding the formation and diffusion of defects on the upper surface of the substrate 240 as much as possible; on the other hand, the first ventilation area is located outside the upper surface of the substrate 240, so that the output airflow of the first ventilation portion 231 will not hit the upper surface of the substrate 240, thereby reducing the amount of solvent vapor and particles brought to the upper surface of the substrate 240, thus avoiding the formation and diffusion of defects on the upper surface of the substrate 240 as much as possible, thereby improving the processing quality of the substrate 240.

[0045] See also Figure 4 or Figure 5 In one embodiment, the first ventilation area is arranged around the circumference of the substrate 240, and a gap is provided between the inner edge of the first ventilation area and the edge of the upper surface of the substrate 240. In this way, the first ventilation area is in an annular shape and is located outside the upper surface of the substrate 240, which can not only effectively remove the solvent vapor in the environment above the substrate 240, but also prevent the output airflow of the first ventilation portion 231 from hitting the upper surface of the substrate 240, thereby reducing the amount of solvent vapor and particles brought to the upper surface of the substrate 240, so as to avoid the formation and diffusion of defects on the upper surface of the substrate 240 as much as possible, thereby improving the processing quality of the substrate 240.

[0046] See also Figure 4 or Figure 5 In one embodiment, the size of the gap is, for example, at least 1 mm.

[0047] See also Figure 4 or Figure 5 In one embodiment, the gap is, for example, 2 mm to 20 mm. Specifically, the gap is, for example, set to 2 mm to 6 mm. In this way, on the one hand, the size of the gap is small enough and not too large, so that the negative pressure formed above the upper surface of the substrate 240 is large enough, which is conducive to effectively removing the solvent vapor in the environment above the substrate 240; on the other hand, the size of the gap is large enough and not too small, so that the solvent vapor and particles can be prevented from being brought to the upper surface of the substrate 240 with the output airflow.

[0048] Of course, as some optional solutions, the gap can also be set to any value greater than 20 mm, which can be flexibly adjusted and set according to actual needs and is not specifically limited here.

[0049] See also Figure 4 or Figure 5 In some embodiments, when determining the output airflow direction angle of the first vent 231, the angle formed by the outlet direction of the first vent 231 and the upper surface of the substrate 240 is calculated based on a first distance between the first vent 231 and the upper surface of the substrate 240, and a second distance between the projection of the first vent 231 on the upper surface of the substrate 240 and the edge of the upper surface of the substrate 240. The output airflow direction of the first vent 231 is determined based on this, so that the first ventilation area is located outside the upper surface of the substrate 240, so that the output airflow does not directly contact the upper surface of the substrate 240.

[0050] See also Figure 4 In one embodiment, the first vent 231 includes a central axis (eg, Figure 4 A first vent is circumferentially arranged (as shown by the Z-axis in FIG).

[0051] When the first vent portion 231 includes a first vent opening circumferentially arranged around the central axis of the reaction chamber 210 , the first vent opening is correspondingly arranged as an annular opening. The gas outlet direction of the first vent opening is arranged at an angle to the upper surface of the substrate 240 .

[0052] See also Figure 4 In other embodiments, the first vent 231 includes a plurality of first vent holes arranged in sequence in the circumferential direction around the central axis of the reaction chamber 210. Optionally, the first vent holes are arranged at equal intervals. In this way, the output airflow of the first vent 231 forms a negative pressure at each position around the central axis of the reaction chamber 210 in the environment above the substrate 240, thereby reducing the amount of solvent vapor and particles brought to the upper surface of the substrate 240, thereby avoiding the formation and diffusion of defects on the upper surface of the substrate 240 as much as possible, thereby improving the processing quality of the substrate 240.

[0053] See also Figure 4In some other embodiments, the first vent 231 includes a plurality of first air outlet nozzles arranged in sequence in the circumferential direction around the central axis of the reaction chamber 210. Optionally, the first air outlet nozzles are arranged at equal intervals. In this way, the output airflow of the first vent 231 will form a negative pressure at each position around the central axis of the reaction chamber 210 in the environment above the substrate 240, thereby reducing the amount of solvent vapor and particles brought to the upper surface of the substrate 240, thereby avoiding the formation and diffusion of defects on the upper surface of the substrate 240 as much as possible, thereby improving the processing quality of the substrate 240. In addition, as an example, the angle of the first air outlet nozzle can be adjusted, so that the angle of the first air outlet nozzle can be flexibly adjusted according to the specific size of the substrate 240, so as to adapt to the processing of substrates 240 of different sizes.

[0054] Of course, as some optional solutions, each first vent hole or each first air outlet nozzle may also be arranged at unequal intervals.

[0055] Optionally, when the first ventilation portion 231 includes both a plurality of first ventilation holes and a plurality of first air outlet nozzles, the first ventilation holes and the first air outlet nozzles are arranged alternately, or arranged one-to-one, or arranged in other ways. The specific arrangements can be flexibly adjusted and set according to actual needs and are not limited here.

[0056] See also Figure 4 In some embodiments, when the number of the first vents 231 is set to at least two, at least two of the first vents 231 are arranged along a direction away from the central axis of the reaction chamber 210 (eg Figure 4 In this way, since the outlet direction of each first vent 231 is arranged at an angle with the upper surface of the substrate 240 and they work together, the negative pressure above the upper surface of the substrate 240 is increased, thereby increasing the power to make the solvent water vapor in the environment above the substrate 240 flow toward the surroundings of the reaction chamber 210.

[0057] See also Figure 4 In some embodiments, the angle between the outlet direction of each first vent 231 and the upper surface of the substrate 240 (the angle is as follows Figure 4The angles a and a are shown in the figure (shown in a) and can be kept the same or different, and can be flexibly adjusted and set according to actual needs. Optionally, the angle a is set to any value less than 30° to 90°, including but not limited to 30°, 45°, 50°, 60°, 75°, 85°, etc. Among them, the angle a formed by the outlet direction of the first vent 231 and the upper surface of the substrate 240 increases successively in the direction away from the central axis of the reaction chamber 210, so that the first ventilation areas corresponding to the first vents 231 are relatively concentrated, which can facilitate the entry into the photoresist collection cup 270 and clean the inner wall of the photoresist collection cup 270.

[0058] See also Figure 4 In one embodiment, the first ventilation mechanism 230 further includes at least one second ventilation portion 232 located above the support portion 220. The projection of the second ventilation portion 232 is located outside the upper surface of the substrate 240, and the area where the output airflow of the second ventilation portion 232 intersects with the reference surface is set as the second ventilation area, and the second ventilation area is located outside the upper surface of the substrate 240.

[0059] The projection of the second vent 232 is located outside the upper surface of the substrate 240 , that is, the distance between the second vent 232 and the central axis of the reaction chamber 210 is greater than that between the first vent 231 and the central axis of the reaction chamber 210 .

[0060] Thus, since the second ventilation area is located outside the upper surface of the substrate 240, the output airflow of the second ventilation portion 232 will not hit the upper surface of the substrate 240, and thus will not bring the solvent vapor and particles to the upper surface of the substrate 240; in addition, the downward output airflow of the second ventilation portion 232 not only plays a role of isolation, but also can take away the solvent vapor and particles in the environment above the substrate 240. In this way, defects can be avoided from forming and spreading on the upper surface of the substrate 240 as much as possible, thereby further improving the processing quality of the substrate 240.

[0061] It should be noted that the "second vent portion 232" can be "a part of the first vent portion 231", that is, the "second vent portion 232" and the "other parts of the first vent portion 231" are manufactured as one piece; it can also be an independent component separable from the "other parts of the first vent portion 231", that is, the "second vent portion 232" can be manufactured independently and then combined with the "other parts of the first vent portion 231" into a whole.

[0062] See also Figure 4In one embodiment, the second vent 232 includes a second vent circumferentially arranged around the central axis of the reaction chamber 210. When the second vent 232 includes a second vent circumferentially arranged around the central axis of the reaction chamber 210, the second vent is correspondingly arranged as an annular opening. The outlet direction of the second vent is, for example, perpendicular to or at an angle to the upper surface of the substrate 240, and can be flexibly adjusted and arranged according to actual needs.

[0063] See also Figure 4 In another embodiment, the second ventilation portion 232 includes a plurality of second ventilation holes sequentially arranged circumferentially around the central axis of the reaction chamber 210. Optionally, the second ventilation holes are arranged at equal intervals.

[0064] See also Figure 4 In another embodiment, the second vent 232 includes a plurality of second gas outlet nozzles sequentially arranged in a circumferential direction around the central axis of the reaction chamber 210. Optionally, the second gas outlet nozzles are arranged at equal intervals. In addition, as an example, the angle of the second gas outlet nozzle can be adjusted so that the angle of the second gas outlet nozzle can be flexibly adjusted according to the specific size of the substrate 240, thereby being adaptable to the processing of substrates 240 of different sizes.

[0065] Of course, as some optional solutions, each second vent hole or each second air outlet nozzle can also be arranged at unequal intervals.

[0066] Optionally, when the second ventilation portion 232 includes both a plurality of second ventilation holes and a plurality of second air outlet nozzles, the second ventilation holes and the second air outlet nozzles are arranged alternately, or arranged one-to-one, or arranged in other ways. The specific arrangements can be flexibly adjusted and set according to actual needs and are not limited here.

[0067] See also Figure 4 In some embodiments, when the number of the second vents 232 is set to at least two, at least two of the second vents 232 are arranged along a direction away from the central axis of the reaction chamber 210 (eg Figure 4 They are arranged in sequence in the direction of Z (as shown in FIG. 1 ).

[0068] See also Figure 4In one embodiment, the substrate processing apparatus further includes a second ventilation mechanism 250 disposed inside the reaction chamber 210. The second ventilation mechanism 250 is located above the support portion 220, and the second ventilation mechanism 250 includes at least one third ventilation portion 251 located directly above the support portion 220. The projection of the third ventilation portion 251 is located in the middle portion of the upper surface of the substrate 240, and the gas outlet direction of the third ventilation portion 251 is opposite to the middle portion of the upper surface of the substrate 240. The first ventilation portion 231 is arranged around the circumference of the third ventilation portion 251. In this way, the third ventilation section 251 of the second ventilation mechanism 250 ventilates toward the middle part of the upper surface of the substrate 240, which plays a role in suppressing pollutants. At the same time, the first ventilation mechanism 230 works synchronously, and the output airflow of the first ventilation mechanism 230 can form a negative pressure in the area above the upper surface of the substrate 240, so that the output airflow of the third ventilation section 251 flows toward the surroundings of the upper surface of the substrate 240 before reaching the upper surface of the substrate 240, thereby greatly reducing the amount of the output airflow of the third ventilation section 251 hitting the upper surface of the substrate 240, and further reducing the amount of solvent water vapor and particles brought to the upper surface of the substrate 240, thereby avoiding the formation and diffusion of defects on the upper surface of the substrate 240 as much as possible.

[0069] See also Figure 4 In one embodiment, the direction of the output airflow of the third ventilating portion 251 is, for example, perpendicular or approximately perpendicular to the upper surface of the substrate 240 in the initial stage of outward output. During the process of the output airflow of the third ventilating portion 251 flowing toward the upper surface of the substrate 240 and before contacting the upper surface of the substrate 240, the negative pressure formed by the output airflow of the first ventilating portion 231 can gradually change the flow direction of the output airflow of the third ventilating portion 251, so that the output airflow of the third ventilating portion 251 flows around the substrate 240.

[0070] See also Figure 4 In one embodiment, the substrate processing apparatus further includes a suction mechanism 260 disposed inside the reaction chamber 210. The suction mechanism 260 is located above the support portion 220, and the suction mechanism 260 is arranged adjacent to the second ventilation mechanism 250. In this way, while the second ventilation mechanism 250 outputs the airflow, the suction mechanism 260 works synchronously, and the condensed water condensed on the wall surface of the second ventilation mechanism 250 by the ambient water vapor in the process is promptly drawn upward, which can reduce the condensed water on the wall surface of the second ventilation mechanism 250 from dripping downward onto the upper surface of the substrate 240 to cause defects.

[0071] When working, the suction force of the suction mechanism 260 is much weaker than the pressure of the output airflow of the second ventilation mechanism 250, and the suction force generated by the suction mechanism 260 during operation is not too large to interfere with the downward output airflow of the second ventilation mechanism 250. The suction force of the suction mechanism 260 and the output airflow pressure of the second ventilation mechanism 250 can be flexibly adjusted and set according to actual needs, and are not limited here.

[0072] Optionally, when the output air flow velocity of the second ventilation mechanism 250 gradually decreases, the suction force of the suction mechanism 260 remains unchanged or tends to increase, so that the suction mechanism 260 can remove the solvent vapor and particles above the upper surface of the substrate 240, providing a certain cleanliness guarantee above the substrate 240.

[0073] Specifically, see Figure 4 , Figure 4 The dashed arrow S1 in the figure indicates that the second ventilation mechanism 250 outputs airflow downwards, and the width of the dashed arrow S1 gradually decreases, which means that the downward airflow output by the second ventilation mechanism 250 gradually decreases as the distance to the upper surface of the substrate 240 becomes closer. Figure 4 The dotted arrow S4 in the figure indicates the output airflow of each first ventilation part 231 of the first ventilation mechanism 230 blowing obliquely toward the reference surface. By controlling the size of the output airflow S4, based on the Bernoulli principle, the required negative pressure can be formed above the upper surface of the substrate 240. Figure 4 The arrow S2 in the figure shows the airflow formed by the solvent vapor and particles above the upper surface of the substrate 240 flowing toward the surroundings of the substrate 240 under the action of negative pressure. The width of each arrow S2 gradually decreases from top to bottom, which means that the airflow formed by the solvent vapor and particles above the upper surface of the substrate 240 flowing toward the surroundings of the substrate 240 under the action of negative pressure gradually weakens from top to bottom. Figure 4 Arrow S3 in FIG. 2 shows that the solvent vapor and particles above the upper surface of the substrate 240 are discharged upward under the suction force of the suction mechanism 260 .

[0074] Optionally, the airflow pressure distribution algorithm follows Bernoulli's principle: p+ρv2 / 2+ρgh=C, where p is the pressure at a point in the fluid, v is the flow velocity of the fluid at that point, ρ is the fluid density, g is the acceleration of gravity, h is the height of the point, and C is a constant.

[0075] Calculate the relationship between the pressure and velocity of the intermediate airflow and the peripheral airflow at the same height:

[0076] p1+ρv12 / 2+ρgh1=p1+ρv22 / 2+ρgh1

[0077] = > p1 + ρv12 / 2 = p1 + ρv22 / 2

[0078] The normal pressure in the photoresist collection cup 270 is, for example, ~65±5Pa, and the working pressure of the suction mechanism 260 is ~32±5Pa. The intermediate pressure is obtained according to the required pressure difference Δ, and the flow velocity v at this point is obtained according to p+ρv2 / 2+ρgh=C.

[0079] See also Figure 4 In one embodiment, the substrate processing device further includes a filter. The filter is connected to the suction mechanism 260 and the second ventilation mechanism 250, and the filter covers each suction part of the suction mechanism 260 and each third ventilation part 251 of the second ventilation mechanism 250. In this way, the filter can prevent the crystals condensed on the inner wall of the suction part of the suction mechanism 260 and the crystals condensed on the wall surface of the third ventilation part 251 from falling back to the upper surface of the substrate 240, resulting in contamination of the upper surface of the substrate 240.

[0080] Optionally, the filter screen is detachably connected to the suction mechanism 260 and the second ventilation mechanism 250. In this way, the filter screen can be easily replaced, cleaned and maintained.

[0081] In one embodiment, the suction mechanism 260 is disposed around the circumference of the second ventilation mechanism 250. The first ventilation mechanism 230 is disposed around the circumference of the suction mechanism 260, and a gap is provided between the first ventilation mechanism 230 and the suction mechanism 260.

[0082] See also Figure 4 In one embodiment, the third vent portion 251 includes a third vent opening circumferentially arranged around the central axis of the reaction chamber 210. When the third vent portion 251 includes a third vent opening circumferentially arranged around the central axis of the reaction chamber 210, the third vent opening is correspondingly arranged as an annular opening.

[0083] See also Figure 4 In another embodiment, the third ventilation portion 251 includes a plurality of third ventilation holes sequentially arranged circumferentially around the central axis of the reaction chamber 210. Optionally, the third ventilation holes are arranged at equal intervals.

[0084] See also Figure 4 In another embodiment, the third vent 251 includes a plurality of third gas outlet nozzles sequentially arranged in a circumferential direction around the central axis of the reaction chamber 210. Optionally, the third gas outlet nozzles are arranged at equal intervals. In addition, as an example, the output airflow direction of the third gas outlet nozzle is perpendicular to the upper surface of the substrate 240, or is arranged at an angle to the upper surface of the substrate 240.

[0085] The angle of the third air outlet nozzle may be unadjustable or adjustable. When the angle of the third air outlet nozzle is adjustable, the angle of the third air outlet nozzle may be flexibly adjusted according to actual needs, so as to be adaptable to the processing of substrates 240 of different sizes.

[0086] Of course, as some optional solutions, each third vent hole or each third air outlet nozzle can also be arranged in a manner of unequal intervals.

[0087] Optionally, when the third ventilation portion 251 includes both a plurality of third ventilation holes and a plurality of third air outlet nozzles, the third ventilation holes and the third air outlet nozzles are arranged alternately, or arranged one-to-one, or arranged in other ways. The specific arrangement can be flexibly adjusted and set according to actual needs and is not limited here.

[0088] See also Figure 4 In some embodiments, when the number of the third vents 251 is set to at least two, at least two of the third vents 251 are arranged along a direction away from the central axis of the reaction chamber 210 (eg Figure 4 They are arranged in sequence in the direction of Z (as shown in FIG. 1 ).

[0089] See also Figure 5 In one embodiment, the substrate processing apparatus further includes a photoresist collecting cup 270 disposed inside the reaction chamber 210 . The photoresist collecting cup 270 is disposed around the circumference of the supporting portion 220 .

[0090] In addition, the substrate processing apparatus further includes a first nozzle (not shown in the figure) located inside the reaction chamber 210 . The first nozzle is located above the substrate 240 , and the first nozzle is used to communicate with the photoresist storage container.

[0091] In addition, the substrate processing apparatus further includes a rotating motor 280 connected to the support portion 220. The rotating motor 280 is used to drive the support portion 220 to rotate. In this way, after the first nozzle sprays the photoresist liquid onto the upper surface of the substrate 240, the rotating motor 280 drives the support portion 220 to rotate, so that the photoresist liquid on the upper surface of the substrate 240 is evenly distributed on the entire upper surface of the substrate 240.

[0092] Optionally, the support part 220 includes but is not limited to an electrostatic chuck, which can stably adsorb and fix the substrate 240. In addition, the support part 220 includes but is not limited to a heating element, which can heat the substrate 240 to heat the substrate 240 to the actual required process temperature.

[0093] See also Figure 5In one embodiment, the substrate processing apparatus further includes a second nozzle 291 located inside the reaction chamber 210 . The second nozzle 291 is located below the substrate 240 , and is used to spray a cleaning agent onto the lower surface of the substrate 240 .

[0094] See also Figure 5 In one embodiment, the substrate processing device further includes a liquid blocking member 292 located inside the reaction chamber 210. The liquid blocking member 292 is disposed around the circumference of the support portion 220, and the liquid blocking member 292 is used to direct the cleaning agent sprayed from the second nozzle 291 to the inner wall of the photoresist collection cup 270. In this way, the second nozzle 291 sprays the cleaning agent to the lower surface of the substrate 240 to prevent the photoresist on the upper surface of the substrate 240 from flowing toward the lower surface of the substrate 240, thereby avoiding the contamination of the lower surface of the substrate 240 by the photoresist liquid during the photoresist liquid coating process. At the same time, the sprayed cleaning agent can also act on the inner wall of the photoresist collection cup 270 to clean the residual photoresist liquid on the inner wall of the photoresist collection cup 270.

[0095] See also Figure 5 In addition, the liquid blocking member 292 is specifically, for example, a liquid blocking plate arranged around the circumference of the support portion 220, so that the cleaning agent can act more concentratedly on the lower surface of the substrate 240. The cleaning agent can be the above-mentioned cleaning liquid or a gas, and the gas can be an inert gas or nitrogen, and the direction of the ejected gas can be vertical or inclined to the lower surface of the substrate 240.

[0096] See also Figure 5 In one embodiment, the second nozzle 291 is configured as one or more second nozzles, for example. The plurality of second nozzles 291 may be disposed below the substrate 240 along the circumference of the support portion 220 .

[0097] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0098] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0099] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0100] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0101] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0102] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0103] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A substrate processing device, characterized in that: The substrate processing device comprises: reaction chamber; a supporting portion, the supporting portion being disposed inside the reaction chamber and being used to support and fix a substrate; and A first ventilation mechanism is provided inside the reaction chamber, and the first ventilation mechanism is located above the support portion, the first ventilation mechanism includes at least one first ventilation portion located directly above the support portion, the projection of the first ventilation portion is located on the upper surface of the substrate, the gas outlet direction of the first ventilation portion is set at an angle to the upper surface of the substrate, the surface where the upper surface of the substrate is located is set as a reference surface, and the area where the output airflow of the first ventilation portion intersects with the reference surface is set as a first ventilation area, and the first ventilation area is located outside the upper surface of the substrate.

2. The substrate processing apparatus according to claim 1, wherein: The first ventilation area is arranged around the circumference of the substrate, and a gap is provided between an inner edge of the first ventilation area and an edge of the upper surface of the substrate.

3. The substrate processing apparatus according to claim 2, wherein: The size of the gap is at least 1 mm.

4. The substrate processing apparatus according to claim 3, wherein: The gap is 2mm-20mm.

5. The substrate processing apparatus according to claim 1, wherein The first vent portion includes a first vent opening circumferentially arranged around a central axis of the reaction chamber.

6. The substrate processing apparatus according to claim 1, wherein: The first ventilation portion includes a plurality of first ventilation holes sequentially arranged circumferentially around the central axis of the reaction chamber; and / or the first ventilation portion includes a plurality of first gas outlet nozzles sequentially arranged circumferentially around the central axis of the reaction chamber.

7. The substrate processing apparatus according to claim 6, wherein: The first ventilation holes are arranged at equal intervals; the first air outlet nozzles are arranged at equal intervals.

8. The substrate processing apparatus according to claim 1, wherein: The first ventilation mechanism also includes at least one second ventilation portion located above the supporting portion, the projection of the second ventilation portion is located in an area outside the upper surface of the substrate, the area where the output airflow of the second ventilation portion intersects with the reference surface is set as a second ventilation area, and the second ventilation area is located in an area outside the upper surface of the substrate.

9. The substrate processing apparatus according to claim 8, wherein: The second vent portion includes a second vent circumferentially arranged around the central axis of the reaction chamber; and / or, The second ventilation portion includes a plurality of second ventilation holes sequentially arranged in a circumferential direction around the central axis of the reaction chamber; and / or, The second ventilation portion includes a plurality of second gas outlet nozzles sequentially arranged in a circumferential direction around the central axis of the reaction chamber.

10. The substrate processing apparatus according to claim 1, wherein The substrate processing device also includes a second ventilation mechanism arranged inside the reaction chamber; the second ventilation mechanism is located above the support part, and the second ventilation mechanism includes at least one third ventilation part located directly above the support part, the projection of the third ventilation part is located in the middle part of the upper surface of the substrate, the exhaust direction of the third ventilation part is opposite to the middle part of the upper surface of the substrate, and the first ventilation part is arranged around the circumference of the third ventilation part.

11. The substrate processing apparatus according to claim 10, wherein: The substrate processing device further includes a suction mechanism disposed inside the reaction chamber; the suction mechanism is located above the support portion, and the suction mechanism is arranged adjacent to the second ventilation mechanism.

12. The substrate processing apparatus according to claim 11, wherein: The substrate processing apparatus further includes a filter screen, which is connected to the suction mechanism and the second ventilation mechanism respectively, and covers each suction part of the suction mechanism and each third ventilation part of the second ventilation mechanism respectively.

13. The substrate processing apparatus according to claim 11, wherein: The suction mechanism is arranged around the circumference of the second ventilation mechanism; the first ventilation mechanism is arranged around the circumference of the suction mechanism, and a gap is provided between the first ventilation mechanism and the suction mechanism.

14. The substrate processing apparatus according to claim 10, wherein: The third vent portion includes a third vent opening circumferentially arranged around the central axis of the reaction chamber; and / or, The third vent portion includes a plurality of third vent holes sequentially arranged circumferentially around the central axis of the reaction chamber; and / or the third vent portion includes a plurality of third gas outlet nozzles sequentially arranged circumferentially around the central axis of the reaction chamber.

15. The substrate processing apparatus according to any one of claims 1 to 14, characterized in that: The substrate processing device further includes a photoresist collecting cup disposed inside the reaction chamber, wherein the photoresist collecting cup is disposed around the circumference of the supporting portion; The substrate processing device further includes a first nozzle located inside the reaction chamber, the first nozzle being located above the substrate and being configured to communicate with a photoresist storage container; The substrate processing device further includes a rotary motor connected to the support portion, wherein the rotary motor is used to drive the support portion to rotate; The substrate processing device further includes a second nozzle located inside the reaction chamber, the second nozzle being located below the substrate and configured to spray a cleaning agent onto a lower surface of the substrate; The substrate processing device further includes a liquid blocking member located inside the reaction chamber, the liquid blocking member being arranged around the circumference of the support portion, and the liquid blocking member being used to guide the cleaning agent sprayed from the second nozzle to the inner wall of the photoresist collecting cup.

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