Flow adjustment method and substrate processing apparatus

Abstract

The invention provides a flow rate adjusting method and a substrate processing apparatus, which can suppress deviation of processing results among a plurality of liquid processing parts. The flow rate adjustment method is a flow rate adjustment method in a substrate processing apparatus including a plurality of liquid processing units that supply a mixed liquid of sulfuric acid and hydrogen peroxide to a substrate to perform liquid processing. The flow rate adjustment method includes: discharging a mixed liquid in a first liquid processing unit and a second liquid processing unit selected from among a plurality of liquid processing units; measuring the temperature of the mixed liquid of the first liquid processing part and the second liquid processing part by using temperature sensors arranged in the first liquid processing part and the second liquid processing part; and adjusting, on the basis of the difference between the temperature of the mixed liquid in the first liquid treatment unit and the temperature of the mixed liquid in the second liquid treatment unit, the flow rate of sulfuric acid before mixing with the mixed liquid in the second liquid treatment unit so as to maintain the difference within an allowable range.

Description

Technical Field

[0001] The present disclosure relates to a flow rate adjustment method in a substrate processing device and the substrate processing device. Background Art

[0002] Conventionally, there is known a substrate processing apparatus for performing liquid processing by supplying a mixed liquid of sulfuric acid and hydrogen peroxide, that is, SPM (Sulfuric acid hydrogen Peroxide Mixture) liquid, to a substrate such as a semiconductor wafer.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2009-16497 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a technology capable of suppressing variations in processing results among a plurality of liquid processing units.

[0008] Solutions for solving problems

[0009] A flow rate adjustment method according to one embodiment of the present disclosure is a flow rate adjustment method in a substrate processing device, wherein the substrate processing device includes a plurality of liquid processing units for supplying a mixed liquid of sulfuric acid and hydrogen peroxide to a substrate for liquid treatment, and the flow rate adjustment method includes a process of spraying, a process of measuring, and a process of adjusting. In the process of spraying, the mixed liquid is sprayed in a first liquid processing unit and a second liquid processing unit selected from a plurality of liquid processing units. In the process of measuring, the temperature of the mixed liquid in the first liquid processing unit and the second liquid processing unit is measured using a temperature sensor provided in each of the liquid processing units of the first liquid processing unit and the second liquid processing unit. In the process of adjusting, the flow rate of sulfuric acid before mixing with the mixed liquid in the second liquid processing unit is adjusted based on the difference between the temperature of the mixed liquid in the first liquid processing unit and the temperature of the mixed liquid in the second liquid processing unit so as to keep the difference within an allowable range.

[0010] Effects of the Invention

[0011] According to the present disclosure, it is possible to suppress variations in processing results among a plurality of liquid processing units. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram showing a schematic configuration of a substrate processing system according to an embodiment.

[0013] Figure 2It is a diagram showing the structure of a processing unit involved in the embodiment.

[0014] Figure 3 It is a diagram showing a specific configuration example of a processing liquid supply system in the substrate processing system according to the embodiment.

[0015] Figure 4 This is a flowchart showing the procedure of the flow rate adjustment process according to the embodiment. DETAILED DESCRIPTION

[0016] Hereinafter, a flow rate adjustment method in a substrate processing apparatus and a mode of the substrate processing apparatus for implementing the present disclosure (hereinafter referred to as “embodiment”) will be described in detail with reference to the accompanying drawings. In addition, the present disclosure is not limited to the embodiment.

[0017] Conventionally, there is known a substrate processing apparatus that performs liquid treatment by supplying a mixed liquid of sulfuric acid and hydrogen peroxide, that is, an SPM liquid, to a substrate such as a semiconductor wafer. In addition, there is a substrate processing apparatus having a plurality of liquid processing units that performs liquid treatment by supplying an SPM liquid to a substrate.

[0018] In addition, in a substrate processing apparatus having a plurality of liquid processing units, a processing result may vary among the plurality of liquid processing units due to a variation in the temperature of the SPM liquid ejected from each of the plurality of liquid processing units. The temperature of the SPM liquid between the plurality of liquid processing units depends on the flow rates of sulfuric acid and hydrogen peroxide before mixing with the SPM liquid in each liquid processing unit, and in particular, depends on the flow rate of sulfuric acid before mixing with the SPM liquid.

[0019] Therefore, in order to suppress the variation in the temperature of the SPM liquid among the plurality of liquid processing units, it is desired to provide a technology for adjusting the flow rate of sulfuric acid before mixing with the SPM liquid.

[0020] The substrate processing apparatus according to the embodiment sprays SPM liquid in a first liquid processing unit and a second liquid processing unit selected from a plurality of liquid processing units. In addition, the substrate processing apparatus according to the embodiment measures the temperature of the SPM liquid in the first liquid processing unit and the second liquid processing unit using temperature sensors provided in the first liquid processing unit and the second liquid processing unit.

[0021] Furthermore, the substrate processing apparatus according to the embodiment adjusts the flow rate of sulfuric acid before mixing with the SPM liquid in the second liquid processing unit based on the temperature difference between the SPM liquid in the first liquid processing unit and the SPM liquid in the second liquid processing unit so as to keep the difference within an allowable range.

[0022] As described above, in the substrate processing apparatus according to the embodiment, the temperature of the SPM liquid is measured for each liquid processing unit to grasp the temperature difference of the SPM liquid between the plurality of liquid processing units, and the flow rate of sulfuric acid before mixing with the SPM liquid in each liquid processing unit is adjusted to keep the difference within an allowable range. Therefore, according to the substrate processing apparatus according to the embodiment, the deviation of the temperature of the SPM liquid between the plurality of liquid processing units can be suppressed, and thus the deviation of the processing results between the plurality of liquid processing units can be suppressed.

[0023] <Overview of substrate processing system>

[0024] Reference Figure 1 A schematic configuration of a substrate processing system 1 (an example of a substrate processing apparatus) according to the embodiment will be described. Figure 1 1 is a diagram showing a schematic configuration of a substrate processing system 1 according to an embodiment. In order to clarify the positional relationship, mutually orthogonal X-axis, Y-axis, and Z-axis are defined, and the positive direction of the Z-axis is defined as the vertical upward direction.

[0025] like Figure 1 As shown, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0026] The loading / unloading station 2 includes a carrier placement unit 11 and a conveying unit 12. A plurality of carriers C for accommodating a plurality of semiconductor wafers W (hereinafter referred to as wafers W (an example of substrates)) in a horizontal state are placed on the carrier placement unit 11.

[0027] The conveying unit 12 is disposed adjacent to the carrier placement unit 11, and includes a substrate conveying device 13 and a delivery unit 14 inside the conveying unit 12. The substrate conveying device 13 includes a substrate holding mechanism for holding the wafer W. In addition, the substrate conveying device 13 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and the substrate conveying device 13 uses the substrate holding mechanism to convey the wafer W between the carrier C and the delivery unit 14.

[0028] The processing station 3 is provided adjacent to the conveying unit 12. The processing station 3 includes a conveying unit 15 and a plurality of processing units 16 (an example of a liquid processing unit). The plurality of processing units 16 are arranged on both sides of the conveying unit 15.

[0029] The conveying unit 15 includes a substrate conveying device 17 therein. The substrate conveying device 17 includes a substrate holding mechanism for holding the wafer W. The substrate conveying device 17 is capable of moving in the horizontal direction and the vertical direction and rotating around the vertical axis, and the substrate conveying device 17 uses the substrate holding mechanism to convey the wafer W between the interface 14 and the processing unit 16.

[0030] The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17 .

[0031] In addition, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes performed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0032] In addition, the program may be recorded in a computer-readable storage medium and installed from the storage medium to the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0033] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement portion 11, and places the taken-out wafer W on the delivery portion 14. The wafer W placed on the delivery portion 14 is taken out from the delivery portion 14 by the substrate transfer device 17 of the processing station 3, and is carried into the processing unit 16.

[0034] After the wafer W carried into the processing unit 16 is processed by the processing unit 16, the wafer W is carried out from the processing unit 16 by the substrate transfer device 17 and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13.

[0035] <Overview of Processing Unit>

[0036] Next, refer to Figure 2 The structure of the processing unit 16 will be described below. Figure 2 1 is a diagram showing the structure of the processing unit 16 according to the embodiment. The processing unit 16 of the present embodiment supplies a mixed solution of sulfuric acid and hydrogen peroxide, that is, SPM liquid, to the wafer W. Figure 2 As shown, the processing unit 16 includes a chamber 20 , a substrate holding mechanism 30 , a nozzle 40 (an example of a discharge unit), a recovery cup 50 , a temperature sensor 80 , and an SPM supply mechanism 70 .

[0037] The chamber 20 accommodates the substrate holding mechanism 30, the nozzle 40, the recovery cup 50 and the temperature sensor 80. A fan filter unit (FFU) 21 is provided on the top of the chamber 20. The FFU 21 is used to form a downflow in the chamber 20.

[0038] The substrate holding mechanism 30 includes a holding portion 31, a support portion 32, and a driving portion 33. The holding portion 31 holds the wafer W horizontally. The support portion 32 is a member extending in the vertical direction, and the base end of the support portion 32 is rotatably supported by the driving portion 33, and the holding portion 31 is horizontally supported at the front end of the support portion 32. The driving portion 33 rotates the support portion 32 around the vertical axis. The substrate holding mechanism 30 rotates the holding portion 31 supported by the support portion 32 by rotating the support portion 32 using the driving portion 33, thereby rotating the wafer W held by the holding portion 31.

[0039] The nozzle 40 supplies the SPM liquid to the wafer W. The nozzle 40 is connected to an SPM supply mechanism 70 to be described later, and discharges the SPM liquid supplied from the SPM supply mechanism 70 to the wafer W.

[0040] The recovery cup 50 is arranged to surround the holding part 31, and is used to collect the SPM liquid scattered from the wafer W due to the rotation of the holding part 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the SPM liquid collected by the recovery cup 50 is discharged to the outside of the processing unit 16 from the drain port 51. In addition, an exhaust port 52 for discharging the gas supplied from the FFU 21 to the outside of the processing unit 16 is formed at the bottom of the recovery cup 50.

[0041] The temperature sensor 80 is arranged above the wafer W and adjacent to the nozzle 40 to measure the temperature of the SPM liquid on the surface of the wafer W. The temperature sensor 80 is provided in each of the plurality of processing units 16 , and thus can measure the temperature of the SPM liquid on the surface of the wafer W in each of the plurality of processing units 16 .

[0042] <Configuration example of treatment liquid supply system>

[0043] Next, refer to Figure 3 A specific configuration example of the processing liquid supply system in the substrate processing system 1 according to the embodiment will be described. Figure 3 1 is a diagram showing a specific configuration example of a processing liquid supply system in the substrate processing system 1 according to the embodiment.

[0044] like Figure 3 As shown, the SPM supply mechanism 70 includes a sulfuric acid supply source 71, a sulfuric acid supply path 72 (an example of a first path), a flow meter 73, a flow regulator 74, and a valve 75 as a supply system of sulfuric acid (H2SO4). The sulfuric acid supply source 71 supplies sulfuric acid at a predetermined temperature (for example, 45°C). The sulfuric acid supply path 72 connects the sulfuric acid supply source 71 to a mixing unit 79 described later, and is used to circulate the sulfuric acid supplied from the sulfuric acid supply source 71.

[0045] The flow meter 73 is provided in the sulfuric acid supply path 72, and is used to measure the flow rate of sulfuric acid flowing in the sulfuric acid supply path 72. The flow regulator 74 adjusts the flow rate of sulfuric acid flowing in the sulfuric acid supply path 72. Specifically, the flow regulator 74 adjusts the flow rate of sulfuric acid flowing in the sulfuric acid supply path 72 based on the set flow rate value set by the control unit 18 so that the measured value of the flow meter 73 approaches the set flow rate value. The valve 75 opens and closes the sulfuric acid supply path 72.

[0046] In addition, the SPM supply mechanism 70 includes a hydrogen peroxide supply source 76, a hydrogen peroxide supply path 77, and a valve 78 as a supply system for hydrogen peroxide (H2O2). The hydrogen peroxide supply source 76 supplies hydrogen peroxide at normal temperature (room temperature). The hydrogen peroxide supply path 77 connects the hydrogen peroxide supply source 76 to a mixing unit 79 described later, and is used to circulate the hydrogen peroxide supplied from the hydrogen peroxide supply source 76. The valve 78 opens and closes the hydrogen peroxide supply path 77.

[0047] The SPM supply mechanism 70 includes a mixing unit 79. The mixing unit 79 mixes sulfuric acid supplied from the sulfuric acid supply path 72 and hydrogen peroxide supplied from the hydrogen peroxide supply path 77 at a predetermined mixing ratio to generate an SPM liquid as a mixed liquid. The generated SPM liquid is supplied to the nozzle 40 and ejected from the nozzle 40.

[0048] In addition, Figure 3 In the example of FIG. 7 , the flow meter 73 and the flow regulator 74 are provided only in the sulfuric acid supply path 72, but a flow meter and a flow regulator may also be provided in the hydrogen peroxide supply path 77. In this case, it is preferable to calibrate the measured value of the flow meter provided in the hydrogen peroxide supply path 77 in advance so that the measured value of the flow meter provided in the hydrogen peroxide supply path 77 is consistent with the actual measured value of the flow rate of hydrogen peroxide flowing in the hydrogen peroxide supply path 77.

[0049] <Flow rate adjustment processing>

[0050] Next, refer to Figure 4 The content of the flow rate adjustment process of sulfuric acid before mixing with the SPM liquid, which is executed by the control unit 18 according to the embodiment, will be described. Figure 4 This is a flowchart showing the procedure of the flow rate adjustment process according to the embodiment.

[0051] For example, before performing substrate processing (liquid processing) on ​​the wafer W using the processing unit 16, Figure 4 In addition to the timing before substrate processing (liquid processing), it is also possible to perform the flow adjustment process at any timing such as a specified timing or a periodic timing. Figure 4 The flow shaping process shown.

[0052] First, the control unit 18 selects a reference processing unit (an example of the first liquid processing unit) and a target processing unit (an example of the second liquid processing unit) from the plurality of processing units 16 (step S101). The reference processing unit refers to a processing unit 16 that serves as a reference for adjusting the flow rate of sulfuric acid among the plurality of processing units 16. The target processing unit refers to a processing unit 16 that serves as an object for adjusting the flow rate of sulfuric acid among the plurality of processing units 16. In the following description, the reference processing unit is described as "processing unit 16R", and the target processing unit is described as "processing unit 16O".

[0053] First, the control unit 18 uses the substrate transport device 17 (see Figure 1 ) The wafer W is loaded into the chambers 20 of the processing units 16O and 16R, and the wafer W is held by the holding portion 31 of the substrate holding mechanism 30. The wafer W may be a product wafer or a dummy wafer for flow rate adjustment. Afterwards, the control unit 18 rotates the wafer W by using the driving unit 33 in the processing units 16O and 16R to rotate the holding portion 31 around the vertical axis.

[0054] Next, the control unit 18 sets the set flow rate values ​​in the flow regulators 74 of the processing units 16R and 16O to a predetermined “common value” (step S102 ). The “common value” may be, for example, a value specified in the process recipe for substrate processing (liquid processing) of the wafer W.

[0055] In a state where the set flow value in the flow regulator 74 of the processing units 16R and 16O is set to a common value, the control unit 18 opens the valves 75 and 78 in the processing units 16R and 16O to spray the SPM liquid from the nozzle 40 toward the wafer W (step S103). When the SPM liquid starts to be sprayed toward the wafer W, the flow regulator 74 of the processing units 16R and 16O adjusts the flow rate of sulfuric acid flowing through the sulfuric acid supply path 72 so that the measured value of the flow meter 73 approaches the set flow value.

[0056] Next, the control unit 18 acquires the temperature of the SPM liquid in the process unit 16R and the temperature of the SPM liquid in the process unit 16O from the temperature sensors 80 of the process units 16R and 16O, respectively (step S104 ).

[0057] Then, the control unit 18 adjusts the flow rate of sulfuric acid before mixing with the SPM liquid in the processing unit 16O based on the difference between the temperature of the SPM liquid in the processing unit 16R and the temperature of the SPM liquid in the processing unit 16O so as to keep the difference within the allowable range (steps S105 to S107). That is, the control unit 18 determines whether the difference between the temperature of the SPM liquid in the processing unit 16R and the temperature of the SPM liquid in the processing unit 16O (the temperature of the SPM liquid in the processing unit 16O - the temperature of the SPM liquid in the processing unit 16R) is within the allowable range (step S105).

[0058] When the difference is within the allowable range (YES in step S105 ), the control unit 18 ends the process without adjusting the flow rate of sulfuric acid before mixing with the SPM liquid.

[0059] On the other hand, when the difference is not within the allowable range (step S105 is "No"), the control unit 18 changes the set flow value in the flow regulator 74 of the processing unit 160 from the "common value" according to the temperature difference (step S106). When the set flow value is changed, the flow regulator 74 of the processing unit 160 adjusts the flow rate of sulfuric acid flowing through the sulfuric acid supply path 72 so that the measured value of the flow meter 73 approaches the changed set flow value. Thus, the control unit 18 can adjust the flow rate of sulfuric acid (that is, sulfuric acid before mixing with the SPM liquid) flowing through the sulfuric acid supply path 72 of the processing unit 160 so that the difference converges within the allowable range.

[0060] Here, the inventors of the present application have conducted intensive studies and found that the relationship between the temperature of the SPM liquid in each treatment unit 16, the temperature of sulfuric acid before mixing, and the flow rates of sulfuric acid and hydrogen peroxide before mixing is represented by the following formula (1).

[0061] (Temperature of SPM Liquid in Each Processing Unit 16)

[0062] =α+β·(temperature of sulfuric acid before mixing)+γ·(flow rate of hydrogen peroxide before mixing) / {(flow rate of sulfuric acid before mixing)+(flow rate of hydrogen peroxide before mixing)}…(1)

[0063] Here, α, β, and γ are coefficients obtained through analysis, experiments, etc.

[0064] The following were confirmed based on formula (1).

[0065] When the flow rate of sulfuric acid before being mixed with the SPM liquid (sulfuric acid flowing through the sulfuric acid supply path 72 ) decreases, the temperature of the SPM liquid in each processing unit 16 increases.

[0066] When the flow rate of sulfuric acid before mixing with the SPM liquid (sulfuric acid flowing through the sulfuric acid supply path 72 ) increases, the temperature of the SPM liquid in each processing unit 16 decreases.

[0067] That is, as can be seen from equation (1), the temperature of the SPM liquid in each processing unit 16 can be increased or decreased by increasing or decreasing the flow rate of sulfuric acid (sulfuric acid flowing through the sulfuric acid supply path 72 ) before mixing with the SPM liquid.

[0068] For example, when the temperature difference is less than 0 (the temperature of the SPM liquid in the processing unit 160 is lower than the temperature of the SPM liquid in the processing unit 16R), the control unit 18 reduces the set flow value in the flow regulator 74 of the processing unit 160. When the set flow value is reduced, the flow regulator 74 of the processing unit 160 reduces the flow rate of sulfuric acid flowing in the sulfuric acid supply path 72 so that the measured value of the flow meter 73 approaches the set flow value after the reduction. As a result, the temperature of the SPM liquid in the processing unit 160 rises, and the temperature difference with the SPM liquid in the processing unit 16R approaches 0.

[0069] On the other hand, when the temperature difference is greater than 0 (the temperature of the SPM liquid of the processing unit 16O is higher than the temperature of the SPM liquid of the processing unit 16R), the control unit 18 increases the set flow value in the flow regulator 74 of the processing unit 16O. When the set flow value increases, the flow regulator 74 of the processing unit 16O increases the flow rate of sulfuric acid flowing through the sulfuric acid supply path 72 so that the measured value of the flow meter 73 approaches the increased set flow value. As a result, the temperature of the SPM liquid of the processing unit 16O decreases, and the temperature difference with the SPM liquid of the processing unit 16R approaches 0.

[0070] In this way, the control unit 18 grasps the temperature difference of the SPM liquid between the processing unit 16R and the processing unit 16O, and adjusts the flow rate of sulfuric acid before mixing with the SPM liquid in the processing unit 16O so as to keep the difference within the allowable range. Therefore, the deviation of the temperature of the SPM liquid between the processing unit 16R and the processing unit 16O can be suppressed, and thus the deviation of the processing results between the processing unit 16R and the processing unit 16O can be suppressed.

[0071] After changing the set flow value in the flow regulator 74 of the processing unit 16O, the control unit 18 corrects the measured value of the flow meter 73 of the processing unit 16O to the "common value" (step S107). This can eliminate the error in the measured value of the flow meter 73 caused by the individual difference of the flow meter 73 between the processing units 16.

[0072] After that, the control unit 18 returns the process to step S104, and repeats the change of the set flow value (step S106) and the correction of the measured value of the flow meter 73 (step S107) until the temperature difference converges within the allowable range (step S105 is "No"). Then, when the temperature difference converges within the allowable range (step S105 is "Yes"), the control unit 18 ends the process.

[0073] As described above, the flow rate adjustment method involved in the embodiment is a flow rate adjustment method in a substrate processing device (as an example, a substrate processing system 1), the substrate processing device has a plurality of liquid processing parts (as an example, a processing unit 16) for supplying a mixed liquid of sulfuric acid and hydrogen peroxide (as an example, SPM liquid) to a substrate (as an example, a wafer W) for liquid treatment, and the flow rate adjustment method includes a process of spraying, a process of measuring, and a process of adjusting. In the process of spraying, the mixed liquid is sprayed in a first liquid processing part (as an example, a processing unit 16R) and a second liquid processing part (as an example, a processing unit 16O) selected from the plurality of liquid processing parts. In the process of measuring, the temperature of the mixed liquid in the first liquid processing part and the second liquid processing part is measured using a temperature sensor (as an example, a temperature sensor 80) provided in each liquid processing part of the first liquid processing part and the second liquid processing part. In the adjustment process, the flow rate of sulfuric acid before mixing with the mixed liquid in the second liquid processing unit is adjusted based on the difference between the temperature of the mixed liquid in the first liquid processing unit and the temperature of the mixed liquid in the second liquid processing unit so as to keep the difference within an allowable range. Thus, according to the flow rate adjustment method involved in the embodiment, it is possible to suppress the deviation of the processing results among the plurality of liquid processing units.

[0074] In addition, it is also possible that the plurality of liquid processing units respectively have a first path (as an example, a sulfuric acid supply path 72), a second path (as an example, a hydrogen peroxide supply path 77), a mixing section (as an example, a mixing section 79), an ejection section (as an example, a nozzle 40), a flow meter (as an example, a flow meter 73), and a flow regulator (as an example, a flow regulator 74). The first path is used to circulate sulfuric acid. The second path is used to flow hydrogen peroxide. The mixing section is used to mix sulfuric acid from the first path with hydrogen peroxide from the second path to generate a mixed liquid. The ejection section ejects the mixed liquid generated by the mixing section onto the substrate. The flow meter is provided in the first path for measuring the flow rate of sulfuric acid circulating in the first path. The flow regulator is provided in the first path for adjusting the flow rate of sulfuric acid circulating in the first path based on a set set flow rate value so that the measured value of the flow meter is close to the set flow rate value. In addition, the flow rate adjustment method involved in the embodiment may also include the following steps: before performing the ejection process, the set flow rate values ​​in the flow regulators of the first liquid processing unit and the second liquid processing unit are set to a predetermined common value. Moreover, in the ejection process, the mixed liquid may be ejected from the ejection unit while the set flow rate values ​​in the flow regulators of the first liquid processing unit and the second liquid processing unit are set to a common value. In the adjustment process, the set flow rate value in the flow regulator of the second liquid processing unit is changed from the common value according to the difference, thereby adjusting the flow rate of sulfuric acid flowing in the first path of the second liquid processing unit. Thus, according to the flow rate adjustment method involved in the embodiment, the deviation of the processing results between multiple liquid processing units can be suppressed.

[0075] In the measurement step, the temperature of the mixed liquid on the surface of the substrate may be measured using a temperature sensor disposed adjacent to the ejection unit. Thus, according to the flow rate adjustment method of the embodiment, the temperature of the mixed liquid on the surface of the substrate can be easily measured.

[0076] <Modification>

[0077] In the above-mentioned embodiment, the temperature sensor 80 is arranged adjacent to the nozzle 40, but the arrangement position of the temperature sensor 80 is not limited thereto. For example, the temperature sensor 80 may be arranged at the nozzle 40 or at a pipe connecting the mixing section 79 and the nozzle 40. In this case, in the measurement process, the temperature of the SPM liquid before being ejected from the nozzle 40 may be measured using the temperature sensor 80 arranged at the nozzle 40 or at a pipe connecting the mixing section 79 and the nozzle 40. Thus, the temperature of the mixed liquid before ejection can be easily measured.

[0078] It should be considered that all aspects of the embodiments disclosed this time are illustrative and not restrictive. In fact, the above-mentioned embodiments can be specifically implemented in a variety of ways. In addition, the above-mentioned embodiments can also be omitted, replaced, and changed in various ways without departing from the attached claims and their purport.

[0079] Description of Reference Numerals

[0080] 1: substrate processing system; 16, 16O, 16R: processing unit; 18: control unit; 19: storage unit; 40: nozzle; 72: sulfuric acid supply path; 73: flow meter; 74: flow regulator; 77: hydrogen peroxide supply path; 79: mixing unit; 80: temperature sensor; W: wafer.

Claims

1. A flow rate adjustment method is a flow rate adjustment method in a substrate processing device, wherein the substrate processing device has a plurality of liquid processing units for supplying a mixed liquid of sulfuric acid and hydrogen peroxide to a substrate for liquid processing, the flow rate adjustment method comprising the following steps: spraying the mixed liquid in a first liquid processing section and a second liquid processing section selected from the plurality of liquid processing sections; Using temperature sensors provided in the first liquid processing section and the second liquid processing section to measure the temperature of the mixed liquid in the first liquid processing section and the second liquid processing section; as well as The flow rate of sulfuric acid before mixing with the mixed liquid in the second liquid processing section is adjusted based on the difference between the temperature of the mixed liquid in the first liquid processing section and the temperature of the mixed liquid in the second liquid processing section so as to keep the difference within an allowable range.

2. The flow rate adjustment method according to claim 1, wherein: The plurality of liquid processing parts respectively include: A first path, which is used to circulate sulfuric acid; a second path for flowing hydrogen peroxide; a mixing unit for mixing the sulfuric acid from the first path and the hydrogen peroxide from the second path to generate a mixed liquid; a spraying unit that sprays the mixed liquid generated by the mixing unit onto a substrate; a flow meter disposed in the first path and used to measure the flow rate of sulfuric acid flowing in the first path; as well as a flow regulator disposed in the first path and configured to adjust the flow rate of sulfuric acid flowing in the first path based on a set flow rate value so that the measured value of the flow meter approaches the set flow rate value, The flow rate adjustment method further includes the following steps: before the ejection step, setting the set flow rate values ​​in the flow rate adjusters of the first liquid processing unit and the second liquid processing unit to a predetermined common value, In the step of performing the ejection, the mixed liquid is ejected from the ejection portion while the set flow values ​​in the flow regulators of the first liquid processing portion and the second liquid processing portion are set to the common value. In the adjusting step, the set flow value in the flow regulator of the second liquid processing section is changed from the common value according to the difference, thereby adjusting the flow rate of sulfuric acid flowing through the first path of the second liquid processing section.

3. The flow rate adjustment method according to claim 2, wherein: In the step of performing the adjustment, after the set flow rate value is changed, the measured value of the flow meter of the second liquid processing section is corrected to the common value.

4. The flow rate adjustment method according to claim 2, wherein: In the step of measuring, the temperature of the mixed liquid on the surface of the substrate is measured using the temperature sensor disposed adjacent to the discharge unit.

5. The flow rate adjustment method according to claim 2, wherein: In the step of measuring, the temperature of the mixed liquid before being ejected from the ejection portion is measured using the temperature sensor disposed at the ejection portion or a pipe connecting the mixing portion and the ejection portion.

6. A substrate processing device comprising: a plurality of liquid treatment units, each of which supplies a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate for liquid treatment; a temperature sensor, disposed in each of the plurality of liquid processing parts, for measuring the temperature of the mixed liquid; as well as Control Department, The control unit causes each unit to execute a flow rate adjustment method, the flow rate adjustment method comprising the following steps: spraying the mixed liquid in a first liquid processing section and a second liquid processing section selected from the plurality of liquid processing sections; Using temperature sensors provided in the first liquid processing section and the second liquid processing section to measure the temperature of the mixed liquid in the first liquid processing section and the second liquid processing section; as well as The flow rate of sulfuric acid before mixing with the mixed liquid in the second liquid processing section is adjusted based on the difference between the temperature of the mixed liquid in the first liquid processing section and the temperature of the mixed liquid in the second liquid processing section so as to keep the difference within an allowable range.

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