Wafer bonding device
By designing a wafer bonding device with adsorption zone and driving components, the problems of complex bonding processes and low accuracy of wafers of different sizes are solved, and firm bonding and high-precision cutting of wafers are achieved.
Patent Information
- Application Number
- CN202411491948.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-23
- Publication Date
- 2024-12-20
AI Technical Summary
When the existing wafer bonding process bonds wafers of different sizes, the process is complex and the wafer edges are irregular after the size modification, which affects the bonding quality and has low dimensional modification accuracy.
Design a wafer bonding device, including a bonding chamber, a first and a second load disk, each load disk is equipped with an adsorption zone and a driving assembly, and the firmness of wafers of different sizes is achieved through the adsorption structure and exhaust passage. Adsorption and bonding, use image sensors to determine the relative position to ensure cutting accuracy.
The firm bonding of wafers of different sizes is achieved, which reduces deformation and warping during the size modification process, and improves the accuracy and production efficiency of wafer cutting.
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Figure CN119170532A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a wafer bonding device. Background Art
[0002] Wafer bonding device is a special equipment used to tightly bond wafers and is widely used in semiconductor manufacturing, microelectronics, micro-electromechanical systems and other fields.
[0003] Some wafer-level bonding processes require bonding wafers of different sizes. For example, when bonding a wafer including a light-emitting chip with a wafer including a control chip, the wafer including the light-emitting chip and the wafer including the logic control chip are usually adjusted to the same size before bonding, which makes the process complicated. Summary of the invention
[0004] The present application provides a wafer bonding device, which includes a bonding chamber and a first carrier, a second carrier and a driving assembly located in the bonding chamber; the first carrier includes a first adsorption surface, and the second carrier includes a second adsorption surface opposite to the first adsorption surface;
[0005] The first adsorption surface includes at least one first adsorption area, each of which is used to adsorb a wafer; the first adsorption area is provided with at least one first adsorption structure, and the first adsorption area is a circular area with the smallest area where all the first adsorption structures in the first adsorption area are located;
[0006] The second adsorption surface includes at least one second adsorption area, each of which is used to adsorb a wafer; the second adsorption area is provided with at least one second adsorption structure, and the second adsorption area is a circular area with the smallest area where all the second adsorption structures in the second adsorption area are located;
[0007] The edge of the orthographic projection of at least one of the second adsorption areas on the first adsorption surface is located inside the edge of at least one of the first adsorption areas;
[0008] The driving component is used to drive the first carrier and / or the second carrier to move, so that the first carrier and the second carrier are close to each other, so that the wafer adsorbed by the first carrier is bonded with the wafer adsorbed by the second carrier.
[0009] In one embodiment, the first adsorption surface includes a first sub-adsorption area and at least one second sub-adsorption area surrounding the first sub-adsorption area, a plurality of exhaust channels are provided inside the first carrier, and the first adsorption structures of different sub-adsorption areas are connected to different exhaust channels; the first adsorption area is the first sub-adsorption area, or the first adsorption area includes any second sub-adsorption area and the sub-adsorption area located inside thereof.
[0010] In one embodiment, the second adsorption surface includes a third sub-adsorption area and at least one fourth sub-adsorption area surrounding the third sub-adsorption area; a plurality of exhaust channels are provided inside the second carrier, and the second adsorption structures of different sub-adsorption areas are connected to different exhaust channels; the second adsorption area is the third sub-adsorption area, or the second adsorption area includes any fourth sub-adsorption area and the sub-adsorption area located inside thereof.
[0011] In one embodiment, the second carrier includes a plurality of the second adsorption areas, and any two of the second adsorption areas do not overlap; and the orthographic projection of each of the second adsorption areas on the first adsorption surface is located inside the edge of the same first adsorption area.
[0012] In one embodiment, a plurality of exhaust channels are disposed inside the second carrier, and the second adsorption structures in different second adsorption areas are connected to different exhaust channels.
[0013] In one embodiment, a plurality of the second adsorption areas are arranged at intervals along the circumferential direction.
[0014] In one embodiment, the second adsorption regions are all the same in shape and size.
[0015] In one embodiment, at least two of the second adsorption regions have different shapes or sizes.
[0016] In one embodiment, the wafer bonding apparatus comprises at least two replaceable second carriers, and the sizes and / or quantities of the second adsorption areas of different second carriers are different.
[0017] In one embodiment, the first adsorption structure is an adsorption hole, and the first adsorption area includes a plurality of adsorption holes arranged at intervals; or when the first adsorption structure is an adsorption ring, and the first adsorption area includes more than two adsorption rings, all the adsorption rings of the first adsorption structure are nested;
[0018] The second adsorption structure is an adsorption hole, and the second adsorption area includes a plurality of adsorption holes arranged at intervals; or the second adsorption structure is an adsorption ring, and the second adsorption area includes more than two adsorption rings, and all the adsorption rings of the second adsorption structure are nested.
[0019] In one embodiment, the wafer bonding device also includes an image sensor, which is arranged on the side of the second carrier and is used to obtain relative position information of the wafer adsorbed on the first adsorption surface and the wafer adsorbed on the second adsorption surface after the wafer adsorbed on the first adsorption surface is bonded with the wafer adsorbed on the second adsorption surface.
[0020] In one embodiment, the first carrier is located directly below the second carrier.
[0021] The wafer bonding device provided in the embodiment of the present application can bond wafers of different sizes and then modify the size of the bonded wafers. The bonded wafers can be firmly combined together, and the wafers can support each other and share mechanical stress, thereby reducing the possibility of deformation or warping of the wafers during the size modification process; and after the wafers of different sizes are bonded, the position for cutting the larger wafer can be determined according to the outline of the smaller wafer, which is beneficial to ensure the accuracy of wafer cutting.
[0022] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.
[0024] Figure 1 A schematic structural diagram of a wafer bonding device provided in one embodiment of the present application;
[0025] Figure 2 A schematic diagram of the distribution of the first adsorption area of the first carrier provided in one embodiment of the present application;
[0026] Figure 3 A schematic diagram of the distribution of the second adsorption area of the second carrier provided in one embodiment of the present application;
[0027] Figure 4 A schematic diagram of the distribution of the second adsorption area of the second carrier provided by another embodiment of the present application;
[0028] Figure 5 A schematic diagram of the structure of adsorption holes and adsorption rings provided in one embodiment of the present application. DETAILED DESCRIPTION
[0029] Here, the technical solutions in the embodiments (or "implementations") of the present application will be described clearly and completely in conjunction with the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.
[0030] If there are terms involving directional indications or positional relationships in the embodiments of the present application (such as up, down, left, right, front, back, inside, outside, top, bottom, center, vertical, horizontal, longitudinal, transverse, length, width, counterclockwise, clockwise, axial, radial, circumferential, etc.), such terms are only used to explain the relative positional relationship, movement, etc. between the components under a certain specific posture (as shown in the accompanying drawings); if the specific posture changes, the directional indication or positional relationship will also change accordingly. In addition, the terms "first", "second", etc. involved in the embodiments of the present application are only used for the purpose of convenience of description and cannot be understood as indicating or implying relative importance.
[0031] The wafer bonding device of the embodiment of the present application is described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the features of the following embodiments and implementations can complement or combine with each other.
[0032] In semiconductor manufacturing, chip-wafer bonding and wafer-wafer bonding are two different bonding technology routes. Chip-wafer bonding is to cut a wafer into multiple chips, and then align these chips with specific positions on another complete wafer and bond them. It is suitable for complex integrated applications with small batches and high yield requirements. Wafer-wafer bonding is to directly bond two complete wafers, which is suitable for mass production applications.
[0033] In the wafer-to-wafer bonding process, wafers of different sizes can be bonded. For example, logic chips usually use advanced processes. In order to improve production efficiency and reduce the cost per unit chip, logic chips are usually made on larger wafers; light-emitting devices are usually made on smaller wafers.
[0034] When bonding the above two chips of different sizes, the related technology usually first reshapes the larger logic control chip wafer into multiple small-sized wafers, and then bonds the resized wafers to the small-sized wafers separately. After the wafer is cut or trimmed, its edge may not be completely regular, and it is difficult to ensure that it is completely consistent with the shape of another wafer. The wafer size modification accuracy is low, and the edge and alignment accuracy of the resized wafer will also be reduced, affecting the quality of subsequent wafer bonding.
[0035] The present application embodiment provides a wafer bonding device, such as Figures 1 to 3 As shown, the wafer bonding apparatus includes a bonding chamber 40 and a first carrier 10, a second carrier 20 and a driving assembly 30 located in the bonding chamber 40. The first carrier 10 includes a first adsorption surface 11, and the second carrier 20 includes a second adsorption surface 21 opposite to the first adsorption surface 11.
[0036] The first adsorption surface 11 includes at least one first adsorption area 111, each of the first adsorption areas 111 is used to adsorb a wafer, the first adsorption area 111 is provided with at least one first adsorption structure, and the first adsorption area 111 is the smallest circular area where all the first adsorption structures in the first adsorption area are located.
[0037] The second adsorption surface 21 includes at least one second adsorption area 211, each of the second adsorption areas 211 is used to adsorb a wafer, the second adsorption area 211 is provided with at least one second adsorption structure, and the second adsorption area 211 is the smallest circular area where all the second adsorption structures in the second adsorption area are located.
[0038] An edge of an orthographic projection of at least one of the second adsorption regions 211 on the first adsorption surface 11 is located inside an edge of at least one of the first adsorption regions 111 .
[0039] The driving component 30 is used to drive the first carrier 10 to move, or drive the second carrier 20 to move, or drive the first carrier 10 and the second carrier 20 to move together, so that the first carrier 10 and the second carrier 20 are close to each other, so that the wafer adsorbed by the first carrier 10 and the wafer adsorbed by the second carrier 20 can be bonded.
[0040] The sizes of the adsorption areas of the first adsorption area 111 and the second adsorption area 211 match the sizes of the wafers adsorbed thereon. Specifically, since the first adsorption area is the smallest circular area where all the first adsorption structures are located in the first adsorption area, at least part of the first adsorption structure is located at the edge of the first adsorption area, and the first adsorption area is used to adsorb wafers slightly larger than its size, and the wafer can be adsorbed more firmly to prevent the edge of the wafer from warping; since the second adsorption area is the smallest circular area where all the second adsorption structures are located in the second adsorption area, at least part of the second adsorption structure is located at the edge of the second adsorption area, and the second adsorption area is used to adsorb wafers slightly larger than its size, and the wafer can be adsorbed more firmly to prevent the edge of the wafer from warping.
[0041] Before wafer bonding, a first wafer with a larger size is fixed to the first adsorption surface 11 of the first carrier 10, so that the first wafer covers the first adsorption area 111 corresponding to its size, and the first wafer is fixed by the adsorption force generated by the first adsorption structure in the first adsorption area 111 on the first wafer. A wafer with a smaller size is fixed to the second adsorption surface 21 of the second carrier 20, so that the second wafer covers the second adsorption area 211 corresponding to its size, and the second wafer is fixed by the adsorption force generated by the second adsorption structure in the second adsorption area 211 on the second wafer.
[0042] Since the size of the first wafer is larger than that of the second wafer, and the edge of the orthographic projection of at least one second adsorption area 211 on the first carrier 10 is always located inside the edge of at least one first adsorption area 111, it is possible to ensure that the orthographic projection of the second wafer with a smaller size on the first carrier 10 is located inside the first wafer with a larger size, thereby achieving bonding of wafers of different sizes. After the wafers are bonded, the position for cutting the first wafer can be determined according to the contour of the second wafer, and finally a bonded wafer is obtained.
[0043] The wafer bonding device of the present application can bond wafers of different sizes and then modify the size of the bonded wafers. Compared with the related art of modifying the size first and then bonding the wafers, the first bonded wafers are already firmly combined together, and the wafers can support each other and share mechanical stress, thereby reducing the possibility of deformation or warping of the wafers during the size modification process. In addition, after the wafers of different sizes are bonded, the position for cutting the larger wafer can be determined according to the outline of the smaller wafer, which is conducive to ensuring the accuracy of wafer cutting.
[0044] It should be noted that the orthographic projection of at least one second adsorption area 211 on the first adsorption surface 11 can overlap with a first adsorption area 111, and the first adsorption area 111 and the second adsorption area 211 can be used to adsorb wafers of the same size, so the wafer bonding device can also bond wafers of the same size.
[0045] In one embodiment, the wafer bonding device further includes an air pump, which is connected to the bonding chamber 40. Before wafer alignment and bonding, the air pump can be used to extract the air in the bonding chamber 40 and fill the bonding chamber with inert gas, so that a clean and stable bonding environment is formed in the bonding chamber 40, which prevents the wafer surface from being contaminated, and is conducive to improving the purity of the bonding interface.
[0046] In one embodiment, the wafer bonding device further includes a first carrier 10' and a second carrier 20'. The first carrier 10 is disposed on the first carrier 10', and the second carrier 20 is disposed on the second carrier 20'. The driving component 30 can drive the first carrier 10' to move the first carrier 10, or drive the second carrier 20' to move the second carrier 20, so that the wafers on the carriers are contacted and pressure is applied to the wafers, thereby completing wafer bonding.
[0047] In one embodiment, the first carrier 10 is located directly below the second carrier 20. The first carrier 10 is used to fix a larger wafer, and the second carrier 20 is used to fix a smaller wafer. When the larger wafer is located below, a larger support surface can be provided to better resist mechanical stress, reduce the warping and deformation of the wafer caused by temperature or pressure changes during the bonding process, and prevent the first carrier from crushing the wafer when applying pressure to the wafer.
[0048] In one embodiment, the wafer bonding device further includes an image sensor 50, which is disposed on the side of the second carrier 20 and is used to obtain relative position information of the wafer adsorbed by the first adsorption surface 11 and the wafer adsorbed by the second adsorption surface 21 after the wafer adsorbed by the first adsorption surface 11 is bonded with the wafer adsorbed by the second adsorption surface 21. Since the first carrier 10 is used to fix larger wafers and the second carrier 20 is used to fix smaller wafers, when the image sensor 50 is disposed on the second carrier 20, it is possible to avoid the larger wafer from blocking the smaller wafer. Figure 1 In the illustrated embodiment, the image sensor 50 is disposed on the second stage 20 ′ and surrounds the second carrier plate 20 . In other embodiments, the image sensor may also be disposed at the edge of the second adsorption surface 21 of the second carrier plate 20 .
[0049] In one embodiment, the wafer bonding apparatus further includes a processor, and the processor is configured to generate a cutting route according to the image acquired by the image sensor 50 and the outline of the wafer with a smaller size.
[0050] In one embodiment, Figure 2 As shown, the first adsorption surface 11 includes a first sub-adsorption area 1111 and at least one second sub-adsorption area 1112 surrounding the first sub-adsorption area 1111. A plurality of exhaust channels are provided inside the first carrier 10. The first adsorption structures of different sub-adsorption areas are connected to different exhaust channels, and any two exhaust channels are not connected. The first adsorption area 111 is the first sub-adsorption area 1111, or the first adsorption area 111 includes any of the second sub-adsorption areas 1112 and the sub-adsorption area located inside thereof. Each exhaust channel can be connected to an exhaust pump, respectively. After placing the wafer in the first adsorption area 111, the exhaust channel corresponding to the first adsorption area 111 is evacuated, so that a negative pressure is formed between the wafer and the first carrier 10, thereby fixing the wafer in the first adsorption area 111.
[0051] The first adsorption surface 11 can adsorb first wafers of different sizes, and the first adsorption area 111 covered by first wafers of different sizes includes different sub-adsorption areas. When the size of the first wafer is small, the first adsorption area 111 may only include the first sub-adsorption area 1111, and when the size of the first wafer is large, the first adsorption area 111 may include the first sub-adsorption area 1111 and at least one second sub-adsorption area 1112. A first carrier 10 can be used for wafers of various sizes without replacing the carrier, which helps to reduce costs and improve production efficiency. In addition, since the first adsorption structures of different sub-adsorption areas are connected to different exhaust channels, when the exhaust channel corresponding to the first adsorption structure in the sub-adsorption area covered by the first wafer is evacuated, the exhaust channel corresponding to the first adsorption structure in other sub-adsorption areas will not affect the vacuum degree of the exhaust channel, thereby ensuring the adsorption effect of the wafer.
[0052] exist Figure 2 In the illustrated embodiment, the first adsorption surface 11 includes a first sub-adsorption area 1111 and three second sub-adsorption areas 1112a to 1112b. For example, when the first adsorption surface 11 adsorbs a 4-inch wafer, the first adsorption area 111 covered by the wafer is the first sub-adsorption area 1111, and at this time, only the exhaust passage connected to the first adsorption structure in the first sub-adsorption area 1111 is evacuated. When the first adsorption surface 11 adsorbs a 6-inch wafer, the first adsorption area 111 covered by the wafer includes the first sub-adsorption area 1111 and the second sub-adsorption area 1112a, and the exhaust passage connected to the first adsorption structure in the first sub-adsorption area 1111 and the second sub-adsorption area 1112a is evacuated at the same time. When the first adsorption surface 11 adsorbs an 8-inch wafer, the first adsorption area 111 covered by the wafer includes the first sub-adsorption area 1111, the second sub-adsorption area 1112a and the second sub-adsorption area 1112b, and the exhaust channels corresponding to the first sub-adsorption area 1111, the second sub-adsorption area 1112a and the second sub-adsorption area 1112b are evacuated at the same time. When the first adsorption surface 11 adsorbs a 12-inch wafer, the first adsorption area 111 covered by the wafer includes the first sub-adsorption area 1111 and the second sub-adsorption area 1112a-1112b, and all the exhaust channels are evacuated at the same time.
[0053] In one embodiment, Figure 3 As shown, the second adsorption surface 21 includes a third sub-adsorption area 2111 and at least one fourth sub-adsorption area 2112 surrounding the third sub-adsorption area 2111, a plurality of exhaust channels are provided inside the second carrier 20, and the second adsorption structures of different sub-adsorption areas are connected to different exhaust channels. The second adsorption area 211 is the third sub-adsorption area 2111, or the second adsorption area 211 includes any fourth sub-adsorption area 2112 and the sub-adsorption area located inside thereof.
[0054] The second adsorption surface 21 can adsorb second wafers of different sizes, and the second adsorption area 211 covered by second wafers of different sizes includes different sub-adsorption areas. When the size of the second wafer is small, the second adsorption area 211 may only include the third sub-adsorption area 2111, and when the size of the second wafer is large, the second adsorption area 211 may include the third sub-adsorption area 2111 and at least one fourth sub-adsorption area 2112. A second carrier 20 can be used for wafers of various sizes without the need for a carrier, which helps to reduce costs and improve production efficiency. In addition, since the second adsorption structures of different sub-adsorption areas are connected to different exhaust channels, when the exhaust channel corresponding to the second adsorption structure in the sub-adsorption area covered by the second wafer is evacuated, the exhaust channel corresponding to the second adsorption structure in other sub-adsorption areas will not affect the vacuum degree of the exhaust channel, so as to ensure the adsorption effect of the wafer.
[0055] exist Figure 3 In the illustrated embodiment, the second adsorption surface 21 includes a third sub-adsorption area 2111 and three fourth sub-adsorption areas 2112a to 2112b. For example, when the second adsorption surface 21 adsorbs a 4-inch wafer, the second adsorption area 211 covered by the wafer is the third sub-adsorption area 2111, and at this time, only the exhaust channel connected to the second adsorption structure in the third sub-adsorption area 2111 is operated. When the second adsorption surface 21 adsorbs a 6-inch wafer, the second adsorption area 211 covered by the wafer includes the third sub-adsorption area 2111 and the fourth sub-adsorption area 2112a, and the exhaust channel connected to the second adsorption structure in the third sub-adsorption area 2111 and the fourth sub-adsorption area 2112a is evacuated at the same time. When the second adsorption surface 21 adsorbs an 8-inch wafer, the second adsorption area 211 covered by the wafer includes the third sub-adsorption area 2111, the fourth sub-adsorption area 2112a and the fourth sub-adsorption area 2112b, and the exhaust channels corresponding to the third sub-adsorption area 2111, the fourth sub-adsorption area 2112a and the fourth sub-adsorption area 2112b are evacuated at the same time. When the second adsorption surface 21 adsorbs a 12-inch wafer, the second adsorption area 211 covered by the wafer includes the third sub-adsorption area 2111 and the fourth sub-adsorption area 2112a-2112b, and all the exhaust channels are evacuated at the same time.
[0056] Wafer bonding equipment uses Figure 2 and Figure 3 When the carriers are shown, the first carrier 10 only absorbs one first wafer at a time, and the second carrier 20 only absorbs one second wafer at a time, and the wafer bonding device performs one-to-one bonding on the first wafer and the second wafer. The size of the first wafer may be larger than the size of the second wafer, but in some embodiments, the size of the first wafer and the size of the second wafer may also be the same.
[0057] In one embodiment, the second carrier 20 includes a plurality of second adsorption areas 211, and a plurality of exhaust channels are provided inside the second carrier 20. No two of the second adsorption areas 211 overlap, and the orthographic projections of the second adsorption areas 211 on the first adsorption surface 11 are located inside the edge of the same first adsorption area 111. Each second adsorption area 211 can fix a second wafer, so the second adsorption surface can adsorb multiple wafers at the same time, so that multiple smaller second wafers adsorbed by the second carrier 20 can be bonded with a larger first wafer adsorbed by the first carrier 10 at the same time, thereby reducing the time and process steps required for wafer bonding.
[0058] Furthermore, the second adsorption structures in different second adsorption areas 211 are connected to different exhaust channels. Each second adsorption area 211 can hold a second wafer, and since the exhaust channels connected to the second adsorption structures in each second adsorption area 211 are independent of each other, the number of second wafers carried by the second carrier 20 can be flexibly set.
[0059] In one embodiment, Figure 4 As shown, the plurality of second adsorption areas 211 are arranged at intervals along the circumferential direction. By arranging the plurality of second adsorption areas 211 circumferentially, the second carrier 20 can accommodate more second wafers, which is beneficial to improving production efficiency. When the wafer needs to be thermally bonded, the above arrangement also helps to evenly dissipate heat.
[0060] In one embodiment, the shapes and sizes of the plurality of second adsorption regions 211 are the same. In some other embodiments, the shapes or sizes of at least two of the second adsorption regions 211 are different.
[0061] In one embodiment, the wafer bonding device includes at least two replaceable second carriers 20, and the second adsorption areas 211 of different second carriers 20 have different sizes or numbers, or different sizes and numbers. By replacing different second carriers, the same wafer bonding device can be used to bond wafers of different sizes and numbers, thereby improving the versatility of the device and saving costs.
[0062] Wafer bonding equipment uses Figure 2 and Figure 4 As shown in the carrier, the first carrier 10 absorbs a first wafer, and the second carrier 20 absorbs multiple second wafers, so that multiple smaller second wafers can be bonded to a larger first wafer at the same time, which significantly reduces the time required for bonding single wafers one by one and improves production efficiency.
[0063] In one embodiment, after the plurality of second wafers are bonded to the first wafer, the substrates of all the second wafers can be removed at the same time, and then the first wafer can be cut according to the contours of the second wafers, which is more conducive to improving production efficiency and reducing costs.
[0064] In one embodiment, Figure 5 As shown, the first adsorption structure 12 is an adsorption hole 121, and the first adsorption area 111 includes a plurality of adsorption holes 121 arranged at intervals. When the first adsorption structure 12 is an adsorption hole 121, the circular area with the smallest area surrounded by the outermost plurality of adsorption holes 121 is the first adsorption area. The plurality of adsorption holes 121 can be evenly distributed in the first adsorption area 111 to ensure that the adsorption force on the wafer adsorbed by the first adsorption area is evenly distributed on the surface of the wafer.
[0065] In one embodiment, Figure 5 As shown, when the first adsorption structure 12 is an adsorption ring 122, and the first adsorption area 111 includes more than two adsorption rings 122, all the adsorption rings 122 of the first adsorption structure 12 are nested, that is, the multiple adsorption rings 122 are concentric, and the diameters of the multiple adsorption rings 122 decrease successively from the edge of the first carrier to the center of the first carrier.
[0066] When the first adsorption structure 12 is an adsorption ring 122, the first adsorption area refers to the circular area surrounded by the outer circle of the outermost adsorption ring 122 in the adsorption rings in the first adsorption area. The annular area where the wafer is adsorbed by the adsorption ring 122 can be subjected to uniform adsorption force, which helps to improve the effect of vacuum adsorption and ensure the flatness of the wafer during the bonding process.
[0067] Figure 5 In the illustrated embodiment, the first adsorption surface is provided with adsorption holes 121 and adsorption rings 122 at the same time. In some other embodiments, the first adsorption structure of the first adsorption surface may be only adsorption holes or only adsorption rings.
[0068] In one embodiment, the second adsorption structure is an adsorption hole, and the second adsorption area includes a plurality of adsorption holes arranged at intervals. When the second adsorption structure is an adsorption hole, the circular area with the smallest area surrounded by the outermost plurality of adsorption holes is the second adsorption area. The plurality of adsorption holes can be evenly distributed in the second adsorption area to ensure that the adsorption force on the wafer adsorbed by the second adsorption area is evenly distributed on the surface of the wafer.
[0069] In one embodiment, the second adsorption structure is an adsorption ring, and when the second adsorption area includes more than two adsorption rings, all the adsorption rings of the second adsorption structure are nested, the multiple adsorption rings 122 are concentric, and the diameters of the multiple adsorption rings 122 decrease successively from the edge of the first carrier to the center of the first carrier.
[0070] When the second adsorption structure is an adsorption ring, the second adsorption area refers to the circular area surrounded by the outer circle of the outermost adsorption ring in the second adsorption area. The annular area where the wafer is adsorbed by the adsorption ring can be subjected to uniform adsorption force, which helps to improve the effect of vacuum adsorption and ensure the flatness of the wafer during the bonding process.
[0071] It should be noted that the technical solutions or technical features described in the above embodiments can be combined or supplemented with each other without causing conflicts. The scope of protection of this application is not limited to the precise structures described in the above embodiments and shown in the drawings; all modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of this application should be included in the scope of protection of this application.
Claims
1. A wafer bonding device, characterized in that: The wafer bonding device comprises a bonding chamber and a first carrier, a second carrier and a driving assembly located in the bonding chamber; the first carrier comprises a first adsorption surface, and the second carrier comprises a second adsorption surface opposite to the first adsorption surface; The first adsorption surface includes at least one first adsorption area, each of which is used to adsorb a wafer; the first adsorption area is provided with at least one first adsorption structure, and the first adsorption area is a circular area with the smallest area where all the first adsorption structures in the first adsorption area are located; The second adsorption surface includes at least one second adsorption area, each of which is used to adsorb a wafer; the second adsorption area is provided with at least one second adsorption structure, and the second adsorption area is a circular area with the smallest area where all the second adsorption structures in the second adsorption area are located; The edge of the orthographic projection of at least one second adsorption area on the first adsorption surface is located inside the edge of at least one first adsorption area; The driving component is used to drive the first carrier and / or the second carrier to move, so that the first carrier and the second carrier are close to each other, so that the wafer adsorbed by the first carrier is bonded with the wafer adsorbed by the second carrier.
2. The wafer bonding device according to claim 1, characterized in that: The first adsorption surface includes a first sub-adsorption area and at least one second sub-adsorption area surrounding the first sub-adsorption area. A plurality of exhaust channels are provided inside the first carrier. The first adsorption structures of different sub-adsorption areas are connected to different exhaust channels. The first adsorption area is the first sub-adsorption area, or the first adsorption area includes any second sub-adsorption area and the sub-adsorption area located inside the second sub-adsorption area.
3. The wafer bonding device according to claim 1, characterized in that: The second adsorption surface includes a third sub-adsorption area and at least one fourth sub-adsorption area surrounding the third sub-adsorption area; a plurality of exhaust channels are provided inside the second carrier, and the second adsorption structures of different sub-adsorption areas are connected to different exhaust channels; the second adsorption area is the third sub-adsorption area, or the second adsorption area includes any fourth sub-adsorption area and the sub-adsorption area located inside thereof.
4. The wafer bonding device according to claim 1, characterized in that: The second carrier includes a plurality of the second adsorption areas, and any two of the second adsorption areas do not overlap; and the orthographic projection of each of the second adsorption areas on the first adsorption surface is located inside the edge of the same first adsorption area.
5. The wafer bonding device according to claim 4, characterized in that: A plurality of exhaust channels are disposed inside the second carrier, and the second adsorption structures in different second adsorption areas are connected to different exhaust channels.
6. The wafer bonding device according to claim 4, characterized in that: A plurality of the second adsorption areas are arranged at intervals along the circumferential direction.
7. The wafer bonding device according to claim 4, characterized in that: The shapes and sizes of the plurality of second adsorption regions are the same.
8. The wafer bonding device according to claim 4, characterized in that: At least two of the second adsorption regions have different shapes or sizes.
9. The wafer bonding device according to claim 4, characterized in that: The wafer bonding device comprises at least two replaceable second carriers, and the sizes and / or quantities of the second adsorption areas of different second carriers are different.
10. The wafer bonding device according to claim 1, characterized in that: The first adsorption structure is an adsorption hole, and the first adsorption area includes a plurality of adsorption holes arranged at intervals; or when the first adsorption structure is an adsorption ring, and the first adsorption area includes more than two adsorption rings, all the adsorption rings of the first adsorption structure are nested; The second adsorption structure is an adsorption hole, and the second adsorption area includes a plurality of adsorption holes arranged at intervals; or the second adsorption structure is an adsorption ring, and the second adsorption area includes more than two adsorption rings, and all the adsorption rings of the second adsorption structure are nested.
11. The wafer bonding device according to claim 1, characterized in that: The wafer bonding device also includes an image sensor, which is arranged on the side of the second carrier and is used to obtain relative position information of the wafer adsorbed on the first adsorption surface and the wafer adsorbed on the second adsorption surface after the wafer adsorbed on the first adsorption surface is bonded with the wafer adsorbed on the second adsorption surface.
12. The wafer bonding device according to claim 1, characterized in that: The first carrier is located directly below the second carrier.