Direct-mounted heat dissipation device, chip testing device and method, and packaging structure

Abstract

The invention provides a direct-mounted heat dissipation device, a chip testing device and method and a packaging structure, and relates to the technical field of semiconductor integrated circuit manufacturing, the direct-mounted heat dissipation device comprises a metal substrate and a first metal heat conduction layer which are combined with each other, and the combination position of the metal substrate and the first metal heat conduction layer is atomic combination. In this way, the metal substrate and the first metal heat conduction layer can be connected to form an integrated structure at the joint through the interaction between atoms. In the process of matching with the chip, the metal substrate and the first metal heat conduction layer do not need to be assembled and disassembled. Moreover, the first metal heat-conducting layer can generate physical deformation in a suitable pressure range, so that the first metal heat-conducting layer can be attached to the surface of the chip in a higher fit degree, and a gap between the metal substrate and the chip can be better filled. Complex assembly and disassembly can be avoided through the directly-attached heat dissipation device, and the increased risk points are effectively reduced, so that the test efficiency is improved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor integrated circuit manufacturing, and in particular to a direct-attach heat dissipation device, a chip testing device and method, and a packaging structure. Background Art

[0002] With the development of artificial intelligence, the application of chips is becoming more and more extensive, which also puts forward higher requirements on their performance and stability. In practical applications, chips may work in different ambient temperatures, so it is very necessary to conduct high and low temperature tests on them before leaving the factory to evaluate their performance and stability.

[0003] When conducting these tests, a key issue is how to effectively dissipate heat from the chip to ensure its normal operation and avoid overheating and damage. In the prior art, a heat sink is usually used to dissipate heat from the chip. In order to reduce the thermal resistance between the heat sink and the chip, a thermal interface material is often required to fill the small gaps or defects between the two surfaces. Existing thermal interface materials come in a variety of forms, including pastes, liquids, films, etc. Thermal interface materials are usually composed of highly thermally conductive fillers in a polymer matrix. Some common matrices include silicone grease, polyurethane, acrylic, etc.

[0004] Currently, existing thermal interface materials are usually installed between the heat sink and the chip by coating or laying. This installation method makes the assembly and disassembly process of the thermal interface material more complicated and increases the risk points of the entire test equipment. Summary of the invention

[0005] The purpose of the present application is to provide a direct-attach heat dissipation device, a chip testing device and method, and a packaging structure to address the deficiencies in the above-mentioned prior art.

[0006] To achieve the above purpose, the technical solution adopted in the embodiment of the present application is as follows:

[0007] According to one aspect of an embodiment of the present application, a direct-attach heat dissipation device is provided, comprising a metal substrate and a first metal thermal conductive layer bonded to each other, wherein the bonding between the metal substrate and the first metal thermal conductive layer is atomic bonding, the metal substrate is bonded to a chip via the first metal thermal conductive layer, and the first metal thermal conductive layer is used to deform under pressure to fill the gap between the metal substrate and the chip.

[0008] Optionally, the junction between the metal substrate and the first metal heat-conducting layer is a metallurgical bond.

[0009] Optionally, the metal substrate and the first metal heat-conducting layer are integrally formed.

[0010] Optionally, the direct-attach heat dissipation device also includes a second metal thermal conductive layer, which is bonded to the side of the first metal thermal conductive layer facing away from the metal substrate. The bonding between the second metal thermal conductive layer and the first metal thermal conductive layer is atomic bonding. The hardness of the second metal thermal conductive layer is less than that of the first metal thermal conductive layer. The second metal thermal conductive layer is used to deform under pressure to fill the gap between the first metal thermal conductive layer and the chip.

[0011] Optionally, the junction between the second metal heat-conducting layer and the first metal heat-conducting layer is a metallurgical bond, or the second metal heat-conducting layer and the first metal heat-conducting layer are integrally formed.

[0012] Optionally, the first metal heat-conducting layer and / or the second metal heat-conducting layer is any one of a silver-plated layer, an aluminum-plated layer, a silver alloy-plated layer and an aluminum alloy-plated layer.

[0013] Optionally, the polishing fineness Rz of the first metal heat conducting layer is higher than 0.8 μm, and / or the polishing fineness Rz of the second metal heat conducting layer is higher than 0.4 μm.

[0014] Another aspect of the present application provides a chip testing method, the method comprising:

[0015] Placing the chip in a station of the test base;

[0016] Driving the heat dissipation device to fit and abut against the chip, wherein the heat dissipation device is any one of the above-mentioned direct-attach heat dissipation devices;

[0017] Testing the chip, and during the chip testing, controlling the heat dissipation device to dissipate heat from the chip;

[0018] After the chip test is completed, the heat dissipation device is driven to separate from the chip, and the chip is taken out from the workstation.

[0019] Optionally, the method further comprises:

[0020] Measuring the center thickness of the first metal heat-conducting layer of the heat dissipation device;

[0021] The loss information of the heat dissipation device is obtained based on the center thickness and the threshold.

[0022] Another aspect of the embodiments of the present application provides a chip testing device, including a test base and any one of the above-mentioned direct-attach heat dissipation devices, the test base having a work station for placing the chip, and the direct-attach heat dissipation device is driven to fit the chip located in the work station.

[0023] According to another aspect of the embodiments of the present application, a packaging structure is provided, including packaging materials, a chip, and any one of the above-mentioned direct-attach heat dissipation devices, wherein the metal substrate of the direct-attach heat dissipation device is bonded to the chip via a first metal thermal conductive layer, and the chip and the direct-attach heat dissipation device are packaged by the packaging material.

[0024] The beneficial effects of this application include:

[0025] The present application provides a direct-mount heat dissipation device, a chip testing device and method, and a packaging structure. The direct-mount heat dissipation device includes a metal substrate and a first metal thermal conductive layer that are bonded to each other. The junction of the metal substrate and the first metal thermal conductive layer is atomically bonded, so that the metal substrate and the first metal thermal conductive layer can be connected at the junction by the interaction between atoms to form an integrated structure. In this way, the metal substrate and the first metal thermal conductive layer can have a higher connection strength, and in the subsequent cooperation process with the chip, there is no need to assemble and disassemble the metal substrate and the first metal thermal conductive layer. The first metal thermal conductive layer can produce physical deformation within a suitable pressure range so as to achieve a higher degree of fit with the chip surface, better fill the gap between the metal substrate and the chip, and avoid damage to the chip. The direct-mount heat dissipation device can avoid complex assembly and disassembly, and effectively reduce the risk points that increase therewith, thereby improving the test efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0027] Figure 1 One of the structural schematic diagrams of a direct-attach heat dissipation device provided in an embodiment of the present application;

[0028] Figure 2 A second structural schematic diagram of a direct-attach heat dissipation device provided in an embodiment of the present application;

[0029] Figure 3 A third structural schematic diagram of a direct-attach heat dissipation device provided in an embodiment of the present application;

[0030] Figure 4 A schematic diagram of the structure of a chip testing device provided in an embodiment of the present application.

[0031] Icons: 100 - direct-attach heat dissipation device; 110 - metal substrate; 111 - groove; 120 - first metal thermal conductive layer; 121 - atomic bonding; 130 - second metal thermal conductive layer; 200 - chip; 300 - test base. DETAILED DESCRIPTION

[0032] To make the purpose, technical scheme and advantages of the embodiment of the present application clearer, the technical scheme in the embodiment of the present application will be clearly and completely described below in conjunction with the drawings in the embodiment of the present application. Obviously, the described embodiment is a part of the embodiment of the present application, rather than all of the embodiments. The components of the embodiment of the present application usually described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiment of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiment of the present application. It should be noted that, in the absence of conflict, the various features in the embodiment of the present application can be combined with each other, and the combined embodiment is still within the protection scope of the present application.

[0033] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the application is usually placed when in use. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0034] In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0035] In the process of chip testing, in order to avoid the need for frequent and complex assembly and disassembly of the heat sink and thermal interface material, the present application provides a direct-attach heat dissipation device, which optimizes the fixing method between the heat sink and the thermal interface material so that the two form an integrated structure before use, eliminating the complex assembly process required for the two. This makes it convenient to directly fit and contact the chip with the direct-attach heat dissipation device during the chip testing process to effectively dissipate the heat of the chip, and after the chip test is completed, since the direct-attach heat dissipation device is an integrated structure, it is sufficient to directly control the separation of the direct-attach heat dissipation device from the chip without the need for complex disassembly processes, which can also reduce the increased risk points. For ease of understanding, the embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0036] Please refer to Figure 1 The embodiment of the present application provides a direct-attach heat dissipation device 100, including a metal substrate 110 and a first metal heat-conducting layer 120, and the metal substrate 110 and the first metal heat-conducting layer 120 are stacked. Among them, the first metal heat-conducting layer 120 can reduce the thermal resistance between the chip 200 and the metal substrate 110, so that the heat generated by the chip 200 can be smoothly transferred to the metal substrate 110 through the first metal heat-conducting layer 120. The metal substrate 110 can be used as the main structure for heat dissipation of the chip 200, which receives heat from the chip 200 through the first metal heat-conducting layer 120, and quickly transfers heat to the outside in a heat exchange manner, thereby dissipating heat from the chip 200 and allowing the chip 200 to work at a suitable ambient temperature.

[0037] In order to optimize the fixing method of the metal substrate 110 and the first metal heat conducting layer 120 so that the two can form an integrated structure, please continue to refer to Figure 1 The metal substrate 110 and the first metal heat-conducting layer 120 are bonded to each other at their contact surfaces. Specifically, the metal substrate 110 and the first metal heat-conducting layer 120 are both made of metal materials, so that the metal substrate 110 and the first metal heat-conducting layer 120 form an atomic bond 121 (such as Figure 1 ), so that the metal substrate 110 and the first metal heat-conducting layer 120 can be connected to form an integrated structure by the interaction between atoms at the joint. In this way, the metal substrate 110 and the first metal heat-conducting layer 120 can have a high connection strength, and in the subsequent matching process with the chip 200, there is no need to assemble and disassemble the metal substrate 110 and the first metal heat-conducting layer 120.

[0038] It should be understood that, as mentioned above, the first metal thermal conductive layer 120 is used to reduce the thermal resistance between the chip 200 and the metal substrate 110. Therefore, when the first metal thermal conductive layer 120 contacts the chip 200, the first metal thermal conductive layer 120 can produce physical deformation within an appropriate pressure range so as to achieve a higher degree of fit with the surface of the chip 200, better fill the gap between the metal substrate 110 and the chip 200, and avoid damage to the chip 200.

[0039] In this way, when the chip 200 needs to be tested, the direct-attach heat dissipation device 100 can be controlled to directly attach and contact the chip 200, so that a heat transfer path is formed in which the metal substrate 110 attaches to the chip 200 through the first metal heat-conducting layer 120, so that the heat generated during the chip 200 test is transferred to the metal substrate 110 through the first metal heat-conducting layer 120, and then the metal substrate 110 quickly exchanges the heat with the outside world, thereby continuously dissipating the heat for the chip 200. After the chip 200 test is completed, since the direct-attach heat dissipation device 100 is an integrated structure, the direct-attach heat dissipation device 100 is directly controlled to separate from the chip 200, and the first metal heat-conducting layer 120 will follow the metal substrate 110 to separate from the chip 200, so there is no need to perform a complicated disassembly process. In summary, the direct-attach heat dissipation device 100 can avoid complicated assembly and disassembly, and effectively reduce the risk points that increase accordingly, thereby improving the test efficiency.

[0040] In addition, the direct-mount heat dissipation device 100 can meet various needs without designing and producing thermal interface materials of different specifications for different types of AI chips 200 and heat dissipation plates. In this way, the application scope of the direct-mount heat dissipation device 100 can be expanded and its use value can be improved.

[0041] It should be noted that in order to optimize the heat dissipation capacity of the direct-mounted heat dissipation device 100, a refrigerant channel can be built into the metal base 110. In this way, after the metal base 110 receives heat from the chip 200 through the first metal thermal conductive layer 120, it can exchange heat with the refrigerant flowing in the refrigerant channel, so that the refrigerant can take away the heat to achieve rapid heat dissipation.

[0042] The shape of the metal substrate 110 in the embodiment of the present application can be reasonably selected according to actual needs, such as a rectangular parallelepiped, a cube, etc.

[0043] In the process of uniformly dissipating heat for the chip 200 , the first metal heat conducting layer 120 can be evenly distributed on the bonding surface of the metal substrate 110 .

[0044] The direct-attach heat dissipation device 100 is an integrated structure, and it is necessary to form an atomic bond 121 at the junction of the metal substrate 110 and the first metal heat-conducting layer 120. Therefore, the direct-attach heat dissipation device 100 can be formed by a reasonable process, including but not limited to the following:

[0045] Example 1

[0046] The metal substrate 110 and the first metal thermal conductive layer 120 can form an integrated structure through atomic metallurgical bonding. Specifically, for example, a laser cladding process is used, that is, a cladding material is added to the surface of the metal substrate 110, and the cladding material is consistent with the material of the first metal thermal conductive layer 120. A high-energy-density laser beam is used to irradiate the cladding material and the thin surface layer of the metal substrate 110, so that atoms at the interface between the two diffuse with each other, and then solidify on the surface of the metal substrate 110 to form a metallurgically bonded additive cladding layer (that is, the first metal thermal conductive layer 120). In this way, the metal substrate 110 and the first metal thermal conductive layer 120 can be connected to form an integrated structure at the junction through the interaction between atoms, so that the metal substrate 110 and the first metal thermal conductive layer 120 have a higher connection strength.

[0047] In order to make the first metal heat conductive layer 120 evenly distributed on the bonding surface of the metal substrate 110, when using the laser cladding process, the particle size of the sprayed cladding material can be made finer, such as using ultrafine silver powder, so that the uniform thickness of the cladding material on the surface of the metal substrate 110 can be better controlled.

[0048] Example 2

[0049] When the metal substrate 110 and the first metal heat-conducting layer 120 are made of the same material, the metal substrate 110 and the first metal heat-conducting layer 120 can be integrally formed. In this way, the atoms at the junction of the metal substrate 110 and the first metal heat-conducting layer 120 are connected together mainly by metal bonds to form an integrated structure, so that the metal substrate 110 and the first metal heat-conducting layer 120 have a higher connection strength.

[0050] In some possible implementations, such as Figure 2 As shown, the direct-mount heat dissipation device 100 also includes a second metal thermal conductive layer 130 , wherein the second metal thermal conductive layer 130 is combined with a side of the first metal thermal conductive layer 120 away from the metal substrate 110 , that is, the second metal thermal conductive layer 130 is located on a side of the first metal thermal conductive layer 120 away from the metal substrate 110 .

[0051] The hardness of the second metal heat conducting layer 130 is less than that of the first metal heat conducting layer 120. Thus, when the direct-attach heat dissipation device 100 is attached to the chip 200, the second metal heat conducting layer 130 can be directly in contact with the chip 200 and attached. Since the second metal heat conducting layer 130 has a lower hardness, the second metal heat conducting layer 130 has a better deformation ability when under pressure. Thus, the gap between the second metal heat conducting layer 130 and the chip 200 can be better filled to achieve a higher degree of fit with the surface of the chip 200, thereby better reducing thermal resistance and avoiding damage to the chip 200.

[0052] When the direct-attach heat dissipation device 100 further includes a second metal heat-conducting layer 130, the junction between the second metal heat-conducting layer 130 and the first metal heat-conducting layer 120 can be an atomic bond 121 (e.g. Figure 2 In this way, the first metal heat conducting layer 120 and the second metal heat conducting layer 130 can be connected together at the joint by the interaction between atoms, and cooperate with the metal substrate 110 to form an integrated structure. In this way, the first metal heat conducting layer 120 and the second metal heat conducting layer 130 can have a high connection strength, and in the subsequent cooperation process with the chip 200, there is no need to assemble and disassemble the first metal heat conducting layer 120 and the second metal heat conducting layer 130.

[0053] In some possible implementations, the second metal heat conducting layer 130 and the first metal heat conducting layer 120 are bonded at a metallurgical junction, which can be performed with reference to the aforementioned example 1.

[0054] In some possible implementations, the second metal heat conducting layer 130 and the first metal heat conducting layer 120 are integrally formed, which can be performed with reference to the aforementioned Example 2.

[0055] In some possible implementations, the first metal heat-conducting layer 120 is any one of a silver coating, an aluminum coating, a silver alloy coating, and an aluminum alloy coating. When the first metal heat-conducting layer 120 is an alloy, such as a silver alloy coating or an aluminum alloy coating, the first metal heat-conducting layer 120 can have better flexibility by adding other materials. Preferably, the first metal heat-conducting layer 120 can be a silver alloy coating, which can have better thermal conductivity and softer deformability.

[0056] In some possible implementations, the second metal heat-conducting layer 130 is any one of a silver coating, an aluminum coating, a silver alloy coating, and an aluminum alloy coating. When the second metal heat-conducting layer 130 is a non-alloy, such as a silver coating or an aluminum coating, it generally has a lower hardness than an alloy, thereby having a better deformability. Preferably, the second metal heat-conducting layer 130 can be a silver coating, which can have better thermal conductivity and softer deformability.

[0057] In some possible implementations, the metal substrate 110 is made of any one of copper, aluminum, and silver alloy.

[0058] In some possible implementations, the first metal heat-conducting layer 120 is subjected to a polishing process, so that the surface of the first metal heat-conducting layer 120 can be smoother, and the polishing process can reach the atomic level. For example, the polishing fineness Rz of the first metal heat-conducting layer 120 after polishing is higher than 0.8 μm. In this way, the surface of the first metal heat-conducting layer 120 is smoother, and when it is directly bonded and contacted with the chip 200, it can achieve a higher degree of fit with the surface of the chip 200, better fill the gap between the metal substrate 110 and the chip 200, and at the same time, during the bonding process, it can also prevent the fine burrs on the surface of the first metal heat-conducting layer 120 from affecting the chip 200. When the direct-attach heat dissipation device 100 also includes a second metal heat-conducting layer 130, the polished first metal heat-conducting layer 120 can provide a relatively flat surface, which helps to improve the bonding strength between the first metal heat-conducting layer 120 and the second metal heat-conducting layer 130.

[0059] In some possible implementations, the second metal heat conducting layer 130 is finely carved and finely polished, so that the surface of the second metal heat conducting layer 130 is smoother, and the polishing process can reach the atomic level. For example, the polishing fineness Rz of the polished second metal heat conducting layer 130 is higher than 0.4 μm. In this way, the surface of the second metal heat conducting layer 130 is smoother, and when it is directly bonded and contacted with the chip 200, it can achieve a higher degree of fit with the surface of the chip 200, better fill the gap between the metal substrate 110 and the chip 200, and at the same time, it can also prevent the fine burrs on the surface of the second metal heat conducting layer 130 from affecting the chip 200 during the bonding process.

[0060] In some possible implementations, the expansion coefficient of the first metal heat conducting layer 120 and / or the second metal heat conducting layer 130 should be relatively small, for example, 18.7×10 -6 / ℃, which can effectively avoid large changes when it works in an environment with changing temperature.

[0061] In some possible implementations, the bonding surface of the direct-mounted heat dissipation device 100 (such as the surface of the first metal thermal conductive layer 120 or the second metal thermal conductive layer 130) can be surface treated (including but not limited to spraying silicone grease, adding antioxidant components, and surface sealing material coating) to make it have better antioxidant properties, thereby ensuring its long-term stable performance and reducing performance degradation caused by oxidation.

[0062] In some possible embodiments, the thickness of the first metal thermal conductive layer 120 and / or the second metal thermal conductive layer 130 is 0.05 mm to 1 mm. Preferably, the thickness of the first metal thermal conductive layer 120 and / or the second metal thermal conductive layer 130 is 0.3 mm. This can not only ensure a lower thermal resistance between the metal substrate 110 and the chip 200, but also reduce the amount of material used and the thickness of the direct-mounted heat dissipation device 100.

[0063] In some possible implementations, such as Figure 1 or Figure 2 As shown, the metal substrate 110 is a plate-shaped structure, and the first metal heat-conducting layer 120 and / or the second metal heat-conducting layer 130 are located on the upper surface of the metal substrate 110 .

[0064] In some possible implementations, such as Figure 3 As shown, a groove 111 is opened on one side surface of the metal substrate 110, and the first metal heat-conducting layer 120 and the second metal heat-conducting layer 130 (if any) are located on the bottom wall and side wall of the groove 111, so that when contacting with the chip 200, the top surface and the side surface of the chip 200 can be fitted and contacted, thereby improving the heat dissipation effect.

[0065] Another aspect of the present application embodiment provides a chip 200 testing method, wherein the heat dissipation device used in the method is any of the above-mentioned direct-attachment heat dissipation devices 100, combined with Figure 4 As shown, the method includes:

[0066] S10: placing the chip in a station of the test base.

[0067] S20: driving the heat dissipation device to fit and abut the chip.

[0068] S30: Testing the chip, and during the chip testing, controlling the heat dissipation device to dissipate heat from the chip.

[0069] S40: After the chip test is completed, the heat dissipation device is driven to separate from the chip, and the chip is taken out from the workstation.

[0070] In order to facilitate the testing of the chip 200, a test base 300 is provided. The test base 300 has a station, and the chip 200 can be placed in the station, so that the chip 200 can form a test circuit through the contacts or interfaces in the station. Then, the heat dissipation device can be driven by a driver such as a motor to contact the chip 200 in the station, such as the metal substrate 110 contacts the chip 200 through the first metal heat-conducting layer 120, or the first metal heat-conducting layer 120 on the metal substrate 110 contacts the chip 200 through the second metal heat-conducting layer 130. Then continue to control the driver to make the heat dissipation device press down the chip 200 in the station, so as to form abutment under the action of the downward pressure, and the downward pressure can make the first metal heat-conducting layer 120 and / or the second metal heat-conducting layer 130 produce physical deformation, so as to achieve a higher degree of fit with the surface of the chip 200. Then start the test of the chip 200, and during the test of the chip 200, control the heat dissipation device to dissipate heat from the chip 200. After the chip 200 is tested, the driver drives the heat sink to separate from the chip 200, and then takes the chip 200 out of the station. Then, the above-mentioned actions are repeated to test the next chip 200.

[0071] Of course, the chip 200 test items in this application include but are not limited to high and low temperature tests, power consumption tests, aging tests, etc.

[0072] Optionally, based on the need for the above-mentioned direct-attach heat dissipation device 100 to be in contact with multiple chips 200 in order to dissipate heat well, the center positions of the first metal heat-conducting layer 120 and the second metal heat-conducting layer 130 (if any) in the direct-attach heat dissipation device 100 will contact and deform with the chips 200 for many times. In order to avoid the first metal heat-conducting layer 120 and the second metal heat-conducting layer 130 (if any) from becoming thinner in the center position and being unable to meet the requirement of filling the gap by deformation, a detection method may also be included, and the method also includes:

[0073] S50: measuring the center thickness of the first metal heat-conducting layer of the heat dissipation device.

[0074] S60: Obtaining loss information of the heat dissipation component according to the center thickness and the threshold.

[0075] After a predetermined number of tests or before each test, the center thickness of the first metal heat conductive layer 120 of the heat dissipation device can be measured (if there is a second metal heat conductive layer 130, the center thickness of the first metal heat conductive layer 120 and the second metal heat conductive layer 130 can be measured). Then, the measured center thickness is compared with the threshold value to obtain the loss information of the heat dissipation device. For example, if the measured center thickness is greater than the threshold value, it can be obtained that there is no loss or the loss is low, and the direct-mounted heat dissipation device 100 can continue to be used. If the measured center thickness is less than the threshold value, it can be obtained that the loss is too high, and an alarm message can be output at this time to suspend the use of the direct-mounted heat dissipation device 100.

[0076] When the loss of the direct-attach heat sink 100 is too high, it can be removed, and then the cladding material is sprayed on the thinner area in the center of the direct-attach heat sink 100 by laser cladding, and then the cladding material forms an atomic bond 121 with the first metal heat conductive layer 120 or the second metal heat conductive layer 130, so that the cladding material fills the thinner area in the center of the direct-attach heat sink 100, so that the direct-attach heat sink 100 can continue to meet the use requirements. Of course, after the laser cladding process, the surface of the direct-attach heat sink 100 used to contact the chip 200 can be polished.

[0077] In another aspect of the embodiment of the present application, a chip 200 testing device is provided, such as Figure 4 As shown, it includes a test base 300 and any of the above-mentioned direct-attach heat dissipation devices 100. The test base 300 has a work station for placing the chip 200. The direct-attach heat dissipation device 100 can be connected to a driver, so that the direct-attach heat dissipation device 100 is driven to fit with the chip 200 located in the work station, thereby dissipating the heat of the chip 200.

[0078] In another aspect of the embodiment of the present application, a packaging structure is provided, including packaging materials, a chip 200 and any of the above-mentioned direct-attach heat dissipation devices 100, wherein the metal substrate 110 of the direct-attach heat dissipation device 100 is attached to the chip 200 via a first metal heat-conducting layer 120, and the chip 200 and the direct-attach heat dissipation device 100 are packaged together via the packaging material, so that the packaged chip 200 has a better heat dissipation capability. The packaging material may be a plastic packaging material or a packaging frame, etc.

[0079] The direct-attach heat dissipation device 100 in the present application can be cooperated with various types of chips 200 to test the chip 200, or packaged with the chip 200 to form a packaging structure with good heat dissipation capabilities. For example, the chip 200 can be an AI chip 200 specifically used to process a large number of computing tasks in artificial intelligence applications, such as a central processing unit (CPU), a graphics processing unit (GPU), a digital signal processing chip 200 (DSP), etc.; or a storage chip 200, such as a random access memory (RAM), a read-only memory (ROM), etc.

[0080] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A direct-mount heat dissipation device, It is characterized in that It includes a metal substrate and a first metal thermal conductive layer which are bonded to each other, wherein the bonding point between the metal substrate and the first metal thermal conductive layer is atomic bonding, the metal substrate is adhered to the chip via the first metal thermal conductive layer, and the first metal thermal conductive layer is used for being deformed under pressure to fill the gap between the metal substrate and the chip.

2. The direct-attach heat dissipation device according to claim 1, It is characterized in that The junction between the metal substrate and the first metal heat-conducting layer is a metallurgical junction.

3. The direct-attach heat dissipation device according to claim 1, It is characterized in that The metal substrate and the first metal heat-conducting layer are integrally formed.

4. The direct-mount heat dissipation device according to any one of claims 1 to 3, It is characterized in that The direct-attach heat dissipation device also includes a second metal thermal conductive layer, which is bonded to the side of the first metal thermal conductive layer facing away from the metal substrate. The bonding between the second metal thermal conductive layer and the first metal thermal conductive layer is atomic bonding. The hardness of the second metal thermal conductive layer is less than that of the first metal thermal conductive layer. The second metal thermal conductive layer is used to deform under pressure to fill the gap between the first metal thermal conductive layer and the chip.

5. The direct-attach heat dissipation device according to claim 4, It is characterized in that The junction between the second metal heat-conducting layer and the first metal heat-conducting layer is a metallurgical junction, or the second metal heat-conducting layer and the first metal heat-conducting layer are integrally formed.

6. The direct-attach heat dissipation device according to claim 4, It is characterized in that The first metal heat-conducting layer and / or the second metal heat-conducting layer is any one of a silver-plated layer, an aluminum-plated layer, a silver alloy-plated layer and an aluminum alloy-plated layer.

7. The direct-attach heat dissipation device according to claim 4, It is characterized in that The polishing fineness Rz of the first metal heat conducting layer is higher than 0.8 μm, and / or the polishing fineness Rz of the second metal heat conducting layer is higher than 0.4 μm.

8. A chip testing method, It is characterized in that The method comprises: Placing the chip in a station of the test base; Driving the heat dissipation device to be bonded and abutted against the chip, wherein the heat dissipation device is a direct-attachment heat dissipation device according to any one of claims 1 to 7; Testing the chip, and during the chip testing, controlling the heat dissipation device to dissipate heat for the chip; After the chip test is completed, the heat dissipation device is driven to separate from the chip, and the chip is taken out from the station.

9. The chip testing method according to claim 8, It is characterized in that The method further comprises: Measuring the center thickness of the first metal heat-conducting layer of the heat dissipation device; The loss information of the heat dissipation device is obtained according to the center thickness and the threshold.

10. A chip testing device, It is characterized in that It comprises a test base and a direct-attach type heat dissipation device as claimed in any one of claims 1 to 7, wherein the test base has a station for placing a chip, and the direct-attach type heat dissipation device is driven to fit with the chip located in the station.

11. A packaging structure, It is characterized in that It comprises packaging material, a chip and a direct-attach type heat dissipation device as claimed in any one of claims 1 to 7, wherein the metal substrate of the direct-attach type heat dissipation device is bonded to the chip via a first metal heat-conducting layer, and the chip and the direct-attach type heat dissipation device are packaged by the packaging material.

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