Resonant structure and filter

Abstract

The invention discloses a resonant structure and a filter. The resonant structure comprises an inductance element group and a capacitance element group, the inductance element group is electrically connected with the capacitance element group; the capacitor element group comprises at least two capacitor elements; the inductance element group comprises a first inductance element and a second inductance element; the first inductance element comprises a first end and a second end which are respectively connected with the capacitor element group, the first end of the second inductance element is connected with a center tap of the first inductance element, and the second end of the second inductance element is grounded; wherein the inductance value on the path from the first end of the first inductance element to the first end of the second inductance element is equal to the inductance value from the second end of the first inductance element to the first end of the second inductance element. According to the invention, the plurality of inductance elements are integrated into a whole by changing the connection mode among the plurality of inductance elements, so that the size of the resonant structure is reduced, and the cost and difficulty of integration of the filter in a system are further reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, in particular to a resonance structure and a filter. Background Art

[0002] Traditional high-pass filter structures usually require a relatively large space to implement because they require the introduction of a large number of inductive components. The size of passive high-pass devices is often related to the wavelength of the operating frequency and are usually large, making them difficult to integrate into chips.

[0003] In the prior art, the improvement of the filter is typically based on a miniaturized high-pass filter structure with a multi-section LC structure, and the wavelength ratio is about 10 -3 , can only bring a certain size reduction effect, but cannot reduce the structural size to a greater extent. Summary of the invention

[0004] In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is how to adjust the resonant structure to reduce the size of the resonant structure.

[0005] In order to solve at least one of the above-mentioned technical problems, the present invention discloses a resonant structure and a filter.

[0006] According to one aspect of the present disclosure, there is provided a resonant structure, comprising:

[0007] An inductor element group and a capacitor element group; the inductor element group is electrically connected to the capacitor element group;

[0008] The capacitor element group includes at least two capacitor elements; the inductor element group includes a first inductor element and a second inductor element;

[0009] The first inductor element comprises a first end and a second end respectively connected to the capacitor element group, the first end of the second inductor element is connected to the center tap of the first inductor element, and the second end of the second inductor element is grounded;

[0010] The inductance value on the path from the first end of the first inductor element to the first end of the second inductor element is equal to the inductance value from the second end of the first inductor element to the first end of the second inductor element.

[0011] In some possible embodiments, the resonant structure comprises a stacked body;

[0012] The first inductor element is composed of a coil-shaped conductor formed on the laminate, and the second inductor element is composed of a zigzag-line conductor formed on the laminate;

[0013] The first end of the zigzag conductor is connected to the central tap position of the coil-shaped conductor by a connecting conductor in a via-hole direct connection manner;

[0014] The center tap position is a position on the coiled conductor corresponding to half of the effective inductance value of the first inductor element.

[0015] In some possible embodiments, the conductor width of the connecting conductor is greater than the conductor width of the coil-shaped conductor, and greater than the conductor width of the zigzag-line conductor.

[0016] In some possible embodiments, the distance between the coil of the coil-shaped conductor located on a side close to the zigzag conductor and the zigzag conductor is greater than a preset conductor distance.

[0017] In some possible embodiments, the capacitor element group includes a first capacitor element, a second capacitor element and a third capacitor element;

[0018] The first end of the first capacitor is connected in parallel with the first end of the second capacitor, and the second end of the first capacitor is connected in parallel with the second end of the third capacitor.

[0019] In some possible embodiments, the second end of the second capacitor element is connected in series with the first end of the first inductor element, and the first end of the third capacitor element is connected in series with the second end of the first inductor element; the second capacitor element and the third capacitor element are used to adjust the suppression performance of the resonant structure on interference signals.

[0020] In some possible embodiments, the stacked body has a metal layer and an insulating layer;

[0021] The first capacitor element is composed of a first electrode plate, a first insulating layer and a second electrode plate which are opposite to each other in the stacking direction of the metal layer and the insulating layer;

[0022] The second capacitor element is composed of a third plate, a second insulating layer and a fourth plate which are opposite to each other in the stacking direction of the metal layer and the insulating layer;

[0023] The third capacitor element is composed of a fifth electrode plate, a second insulating layer, and a sixth electrode plate that are opposed to each other in the stacking direction of the metal layer and the insulating layer.

[0024] In some possible embodiments, the capacitance value of the second capacitance element is equal to the capacitance value of the third capacitance element;

[0025] The capacitance value of the second capacitor and the capacitance value of the third capacitor are at least 5 times the capacitance value of the first capacitor.

[0026] In some possible embodiments, the resonant structure is disposed on a substrate; in a direction perpendicular to the substrate, a projection of the first inductor element and a projection of the first capacitive element at least partially overlap.

[0027] In some possible embodiments, the resonant structure is disposed on a substrate; in a direction perpendicular to the substrate, a projection of the first inductor element and a projection of the second inductor element do not overlap.

[0028] In a possible embodiment, the value of the size-to-wavelength ratio corresponding to the resonant structure is 10 -4 Order of magnitude; the size-to-wavelength ratio is determined based on the size of the resonant structure and the wavelength of the signal to be processed.

[0029] In some possible embodiments, the resonant structure further includes a first port and a second port;

[0030] A high-pass filter characteristic is exhibited between the first port and the second port.

[0031] According to a second aspect of the present disclosure, a filter is provided, comprising the resonant structure as described above.

[0032] The implementation of the present invention has the following beneficial effects:

[0033] In the present invention, by changing the connection mode between the inductance elements, the first inductance element is connected to the second inductance element and integrated into a T-type inductance device, compared with the parallel arrangement of the inductance elements, the space occupied by the inductance elements can be reduced, thereby reducing the size of the resonant structure; at the same time, the second inductance element is respectively connected to the center tap of the first inductance element, so that half of the first inductance element, the second inductance element and the capacitor element group, and the other half of the first inductance element, the second inductance element and the capacitor element group, respectively constitute a resonator, which can reduce the number of inductance elements while taking into account the filtering performance of the resonant structure, thereby reducing the size of the resonant structure to a certain extent; in addition, by setting the capacitor element group, by adjusting the capacitance value of the capacitor element in the capacitor element group, it is possible to adjust the out-of-band suppression characteristics of the resonant structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solution of the present invention, the accompanying drawings required for use in the description of the prior art will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0035] Figure 1A circuit schematic diagram corresponding to a resonant structure provided by an embodiment of the present invention;

[0036] Figure 2 A schematic structural diagram corresponding to an inductor element group in a resonant structure provided in an embodiment of the present invention;

[0037] Figure 3 A schematic diagram of the structure corresponding to the capacitor element group in the resonant structure provided by an embodiment of the present invention;

[0038] Figure 4 A resonant structure plane layout corresponding to a resonant structure provided in an embodiment of the present invention;

[0039] Figure 5 A three-dimensional layout of a resonant structure corresponding to a resonant structure provided in an embodiment of the present invention;

[0040] Figure 6 A structural side view of a second / third capacitor element provided by an embodiment of the present invention;

[0041] Figure 7 It is the layout diagram of the T-type inductor structure in the prior art;

[0042] Figure 8 Application provided by the embodiment of the present invention Figure 1 Filter simulation data graph of the resonant structure.

[0043] The above-mentioned figure marks correspond respectively to: 1-stacked body, 2-center tap position, 3-connecting conductor, 4-substrate, 5-first port, 6-second port, L1-first inductor element, L2-second inductor element, LA1-coil-shaped conductor, LA2-zigzag conductor, C1-first capacitor element, CA1-first electrode plate, CA2-second electrode plate, C2-second capacitor element, CA3-third electrode plate, CA4-fourth electrode plate, C3-third capacitor element, CA5-fifth electrode plate, CA6-sixth electrode plate, K1-first via, K2-second via, M1-first metal plate, M2-second metal plate, M3-third metal plate, M4-fourth metal plate, M5-fifth metal plate, M6-sixth metal plate, CB1-first insulating layer, CB2-second insulating layer, CB3-third insulating layer. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of this specification to clearly and completely describe the technical solutions in the embodiments of this specification. Obviously, the described embodiments are only part of the embodiments of this specification, not all of the embodiments. Based on the embodiments in this specification, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0045] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, such as a process, method, system, product, or server that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products, or devices.

[0046] Various exemplary embodiments, features and aspects of the present disclosure will be described in detail below with reference to the accompanying drawings. The same reference numerals in the accompanying drawings represent elements with the same or similar functions. Although various aspects of the embodiments are shown in the accompanying drawings, the drawings are not necessarily drawn to scale unless otherwise specified.

[0047] The word “exemplary” is used exclusively herein to mean “serving as an example, example, or illustration.” Any embodiment described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments.

[0048] The term "and / or" herein is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the term "at least one" herein represents any combination of at least two of any one or more of a plurality of. For example, including at least one of A, B, and C can represent including any one or more elements selected from the set consisting of A, B, and C.

[0049] In addition, in order to better illustrate the present disclosure, numerous specific details are given in the following specific embodiments. It should be understood by those skilled in the art that the present disclosure can also be implemented without certain specific details. In some examples, methods, means, components and circuits well known to those skilled in the art are not described in detail in order to highlight the subject matter of the present disclosure.

[0050] Embodiment 1:

[0051] Figure 1 A circuit schematic diagram corresponding to the resonant structure provided in an embodiment of the present invention is shown; Figure 2 A schematic structural diagram corresponding to an inductor element group in a resonant structure provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of the results corresponding to the capacitor element group in the resonant structure provided by the embodiment of the present invention; please refer to Figure 1-3 , a resonant structure comprising:

[0052] An inductor element group L and a capacitor element group C; the inductor element group L is electrically connected to the capacitor element group C;

[0053] The capacitor element group C includes at least two capacitor elements; the inductor element group L includes a first inductor element L1 and a second inductor element L2;

[0054] The first inductor element L1 includes a first end and a second end respectively connected to the capacitive element group C, the first end of the second inductor element L2 is connected to the center tap of the first inductor element L1, and the second end of the second inductor element L2 is grounded;

[0055] The inductance value of the path from the first end of the first inductance element L1 to the first end of the second inductance element L2 is equal to the inductance value from the second end of the first inductance element L1 to the first end of the second inductance element L2.

[0056] The capacitor element group C includes a first capacitor element C1, a second capacitor element C2 and a third capacitor element C3;

[0057] A first end of the first capacitive element C1 is connected in parallel to a first end of the second capacitive element C2 , and a second end of the first capacitive element C1 is connected in parallel to a second end of the third capacitive element C3 .

[0058] The second end of the second capacitor element C2 is connected in series with the first end of the first inductor element L1, and the first end of the third capacitor element C3 is connected in series with the second end of the first inductor element L1; the second capacitor element C2 and the third capacitor element C3 are used to adjust the suppression performance of the resonant structure to interference signals.

[0059] The capacitance value of the second capacitor element C2 is equal to the capacitance value of the third capacitor element C3; the capacitance value of the second capacitor element C2 and the capacitance value of the third capacitor element C3 are at least 5 times the capacitance value of the first capacitor element C1.

[0060] like Figure 1-3As shown, the resonant structure may include multiple inductance elements and multiple capacitance elements, the multiple inductance elements constitute an inductance element group L, and the multiple capacitance elements constitute a capacitance element group C; wherein the number of the multiple inductance elements may be two, namely a first inductance element L1 and a second inductance element L2, and the number of the multiple capacitance elements may be three, namely a first capacitance element C1, a second capacitance element C2 and a third capacitance element C3; wherein the second capacitance element C2 and the third capacitance element C3 are two identical capacitance elements with the same parameters, and the capacitance value of the second capacitance element C2 and / or the capacitance value of the third capacitance element C3 is much larger than the capacitance value of the first capacitance element C1, for example, the capacitance value of the second capacitance element C2 and / or the capacitance value of the third capacitance element C3 may be five times the capacitance value of the first capacitance element C1, or may be more than five times, that is, C2=C3=5*C1, and by setting the difference between the capacitance values, the suppression performance of the interference signal in the resonant structure, that is, the out-of-band suppression characteristic, can be effectively adjusted.

[0061] The first end of the first capacitor element C1 is electrically connected to the first end of the second capacitor element C2 to realize the parallel connection of the first capacitor element C1 and the second capacitor element C2; the second end of the first capacitor element C1 is electrically connected to the second end of the third capacitor element C3 to realize the parallel connection of the first capacitor element C1 and the third capacitor element C3; the first end of the first inductor element L1 is connected in series with the second end of the second capacitor element C2, the second end of the first inductor element L1 is connected to the first end of the third capacitor element C3, the first end of the second inductor element L2 is connected to the center tap of the first inductor element L1, and the second end of the second inductor element L2 is grounded, thereby forming a resonant structure. The center tap can be a position on the first inductor element L1 so that the inductance value on the path from the first end of the first inductor element L1 to the first end of the second inductor element L2 is equal to the inductance value from the second end of the first inductor element L1 to the first end of the second inductor element L2.

[0062] By adjusting the arrangement distance between the first inductor element L1 and the second inductor element L2 on the substrate 4, no mutual coupling effect is generated between the first inductor element L1 and the second inductor element L2; wherein the second inductor element L2 is connected to the first inductor element L1 by direct connection through a via, and connecting the first inductor element L1 and the second inductor element L2 by direct connection through a via can reduce the loss of the signal when it is transmitted in the resonant structure.

[0063] The resonant structure described in the present invention can achieve the same effect as setting two L1 / 2 inductors and two 2L2 inductors in the traditional structure. Compared with the traditional structure, the size of the second inductor element L2 is one-fourth of the size of the inductor in the traditional structure, and the size of the first inductor element L1 will also be smaller than the size occupied by two L1 / 2 inductors in series due to its self-inductance effect. Therefore, based on the above resonant structure, it is possible to further reduce the resonant structure on the basis of the traditional structure, thereby reducing the size occupied by the resonant structure in the system, saving costs, and reducing the difficulty of integrating the resonant structure; multiple elements in the resonant structure can be arranged in a left-right symmetrical manner, which can achieve port reciprocity on both sides of the resonant structure, thereby improving the convenience of the resonant structure in the integration process.

[0064] In another embodiment, the resonant structure further includes a first port 5 and a second port 6, and a high-pass filter characteristic is displayed between the first port 5 and the second port 6. That is, the resonant structure can be configured as a filter that can display a high-pass filter characteristic.

[0065] In another embodiment, the central axis can be determined as a straight line passing through the center point of the first inductor element L1 and perpendicular to the first inductor element L1. The above-mentioned resonant structure is arranged symmetrically along the central axis, and the central axis is a straight line passing through the center point of the first inductor element L1 and perpendicular to the first inductor element L1 on the topological diagram, that is, Figure 1 The dashed line passing through the first capacitor C1, the first inductor L1 and the second inductor L2 is the center axis. It should be noted that the center axis is only used to illustrate that the resonant structure can be symmetrically arranged, and does not limit the resonant structure to be arranged only based on the aforementioned position.

[0066] The symmetrical arrangement of the central axis and the resonant structure is only a description of the arrangement of multiple elements in a resonant structure; the straight line that can determine the symmetry of the resonant structure can be determined as the central axis, rather than strictly determining the position of the central axis according to the above description; in addition, the resonant structure may also be arranged symmetrically in terms of positional relationship.

[0067] In another embodiment, the first inductance element L1 can be regarded as two parts along its center, and the part of the first inductance element L1 on the left side of the center can be regarded as the first part, and the part of the first inductance element L1 on the right side of the center can be regarded as the second part, wherein the position at the center can be the position corresponding to the position where the inductance value of the first inductance element L1 is half of the inductance value in the first inductance element; then the first part of the first inductance element L1, the second capacitance element C2, and the second inductance element L2 can be regarded as a resonator, and the second part of the first inductance element L1, the third capacitance element C3, and the second inductance element L2 can be regarded as a resonator, while reducing the number of resonators to reduce the size of the resonant structure, the good filtering performance corresponding to the multiple resonators is substantially retained, thereby achieving the size reduction of the resonant structure while taking into account the filtering performance of the resonant structure.

[0068] In another embodiment, the number of capacitor elements connected in parallel with the first capacitor element C1 can be multiple, for example, 4, etc. There is no limit on the number of capacitor elements connected in parallel with the first capacitor element C1, and there is no limit on the number of first capacitor elements C1, as long as the combined capacitance of the multiple capacitor elements after connection can be equivalent to the capacitance value corresponding to the first capacitor element C1, and the resonant structure can be made symmetrical along the central axis.

[0069] In another embodiment, the number of inductance elements in the inductance element group L can be multiple, for example, three, and the first inductance element L1 in the above embodiment is replaced by two L1 / 2 inductances, and the second inductance element L2 is connected to the middle position of the two L1 / 2 inductances, so that the three inductances are integrated into a T-type inductance, so as to achieve the above embodiment, that is, Figure 1 The same filtering effect as the resonant structure.

[0070] Embodiment 2:

[0071] Figure 4 A resonant structure plane layout corresponding to a resonant structure provided in an embodiment of the present invention, Figure 5 A three-dimensional resonant structure layout corresponding to a resonant structure provided in an embodiment of the present invention, Figure 6 For a structural side view of the second / third capacitor element provided in an embodiment of the present invention, please refer to Figure 4-6 , the arrangement of the resonant structure can be:

[0072] The resonant structure is arranged on a substrate 4;

[0073] The resonant structure can be set on the substrate 4. The present invention does not limit the choice of the substrate, and ceramic materials, resin materials, semiconductor substrates and other materials can be selected as the substrate; the resonant structure can be integrated into systems such as chips, PCBs, and packaging substrates.

[0074] In another specific implementation, the resonant structure may also be embedded inside the substrate 4 , thereby reducing the thickness of the resonant structure to a certain extent.

[0075] The resonant structure comprises a laminate 1; the laminate 1 comprises a metal layer and an insulating layer;

[0076] The resonant structure of the stacked arrangement can be regarded as a stacked body 1, which can include multiple conductive layers and multiple insulating layers; wherein the conductive layers and the insulating layers can cooperate with each other to form multiple elements on the stacked body.

[0077] The first inductor element L1 is composed of a coiled conductor LA1 formed on the laminate 1, and the second inductor element L2 is composed of a zigzag conductor LA2 formed on the laminate 1; a first end of the zigzag conductor LA2 is connected to a central tap position 2 of the coiled conductor LA1 by a connecting conductor 3 in a via-direct connection manner;

[0078] Among them, the center tap position 2 is a position on the coil-shaped conductor LA1 corresponding to half of the effective inductance value of the first inductance element L1; the conductor width of the connecting conductor 3 is greater than the conductor width of the coil-shaped conductor LA1 and the conductor width of the zigzag conductor LA2; the coil in the coil-shaped conductor LA1 located on the side close to the zigzag conductor LA2, the distance between it and the zigzag conductor LA2 is greater than the preset conductor distance.

[0079] For the inductor element, the first inductor element L1 may be formed by a coil-shaped conductor LA1, and the second inductor element L2 may be formed by a zigzag-line conductor LA2, thereby reducing the size occupied by the inductor element in the resonant structure.

[0080] As for the connection method of the coil-shaped conductor LA1 and the zigzag conductor LA2, a connecting conductor 3 is used, and the first end of the connecting conductor 3 is connected to the center tap position 2 of the coil-shaped conductor LA1, and the second end of the connecting conductor 3 is connected to the first end of the zigzag conductor LA2, and the connection is made by direct connection through a via hole; wherein the center tap position 2 can be a position on the coil-shaped conductor LA1 corresponding to half of the effective inductance value of the first inductor element L1; connecting the two conductors by direct connection through a via hole can reduce the loss; connecting the two conductors by using the connecting conductor 3 can ensure the distance between the two conductors (i.e. Figure 5 The S shown in ) is greater than the preset conductor distance, thereby reducing the coupling between the two conductors as much as possible and avoiding the influence of the coupling between the conductors on the overall performance of the resonant structure.

[0081] Among them, in order to ensure the stability of the connection between the connecting conductor 3 and the two conductors, the width of the connecting conductor 3 can be set to be larger than the width of the coiled conductor LA1, and the width of the connecting conductor can be larger than the width of the zigzag conductor LA2; the preset conductor distance can be the minimum spacing that can make the configuration of the elements in the resonant structure meet the arrangement rules, that is, the preset conductor distance can be the minimum distance corresponding to the structural processing capability; the conductor distance between the coiled conductor LA1 and the zigzag conductor LA2 can be the distance between the outermost coil located on the side close to the zigzag conductor LA2 in the multi-layer coil of the coiled conductor LA1 and the zigzag conductor LA2, Figure 5 In the embodiment shown, the zigzag conductor LA2 includes a long portion and a short portion, both of which are straight line segments. The straight line where the long portion is located is the first straight line. On the side of the coil-shaped conductor LA1 close to the zigzag conductor LA2, there is a near point with the shortest vertical distance to the first straight line. The vertical distance between the near point and the first straight line is Figure 5 The distance S shown in the figure; for example, if the preset conductor distance is S1, the conductor distance between the coil-shaped conductor LA1 and the zigzag conductor LA2 can be S1+n, that is, the conductor distance can be any value greater than the preset conductor distance; there is no limitation on the range of S1 and n, as long as the smallest possible value can be selected on the basis of achieving structural processing.

[0082] The first capacitive element C1 is composed of a first electrode plate CA1, a first insulating layer CB1 and a second electrode plate CA2 which are opposite to each other in the stacking direction of the metal layer and the insulating layer;

[0083] The second capacitor C2 is composed of a third plate CA3, a second insulating layer CB2 and a fourth plate CA4 which are opposite to each other in the stacking direction of the metal layer and the insulating layer;

[0084] The third capacitive element C3 is composed of a fifth electrode plate CA5 , a third insulating layer CB3 , and a sixth electrode plate CA6 which are opposite to each other in the stacking direction of the metal layer and the insulating layer.

[0085] like Figure 4-5 As shown, for the capacitor elements, each capacitor element is composed of at least two electrodes and an insulating layer sandwiched between the electrodes; for the first capacitor element C1, an interdigitated capacitor, i.e., a MOM capacitor (Metal-Oxide-Metal, metal-oxide-metal), can be selected, and the first electrode plate CA1 in the first capacitor element C1 can be a first interdigitated plate, the second electrode plate CA2 can be a second interdigitated plate, and the first insulating layer CB1 can be an insulating layer between the two interdigitated plates; the use of MOM capacitors can improve the compactness of the device layout and reduce the layout area of ​​the bandpass filter when the parameter requirements of the coupling capacitor are large.

[0086] Since the second capacitor element C2 and the third capacitor element C3 have the same capacitance, Figure 6 The side view of the capacitor structure shown in FIG. 1 may correspond to the second capacitor element C2 or the third capacitor element C3; Figure 6 As shown, for the second capacitor element C2 and the third capacitor element C3, MIM capacitors (Metal-Insulator-Metal) can be selected; in the second capacitor element C2, the third electrode CA3 can include a first metal layer M1, a first via K1 and a second metal layer M2, the fourth electrode CA4 can be the third metal layer M3, and the second insulating layer CB2 is between the second metal layer M2 and the third metal layer M3; similarly, the fifth electrode CA5 can include a fourth metal layer M4, a second via K2 and a fifth metal layer M5, the sixth electrode CA6 can be a sixth metal layer M6, and the third insulating layer CB3 is between the fifth metal layer M5 and the sixth metal layer M6.

[0087] It should be understood that in this embodiment, the use of interdigital capacitors for the first capacitor element C1 and the use of MIM capacitors for the second capacitor element C2 and the third capacitor element C3 are only designed as a preferred technical solution. Any capacitor that can improve the out-of-band suppression performance and affect the passband performance can be used as an optional device for technical personnel in this field when designing the layout.

[0088] In addition, there are no restrictions on the arrangement of the conductors and insulating layers in the stack, such as the winding spacing of the coiled conductor LA1, or the distance between two capacitor elements, as long as the spacing is reduced as much as possible while meeting the circuit design rules and facilitating wiring.

[0089] In a direction perpendicular to the substrate 4 , the projection of the first inductance element L1 at least partially overlaps with the projection of the first capacitance element C1 ; in a direction perpendicular to the substrate 4 , the projection of the first inductance element L1 does not overlap with the projection of the second inductance element L2 .

[0090] Preferably, in order to minimize the mutual coupling effect between the first inductance element L1 and the second inductance element L2, the projection area of ​​the first inductance element L1 and the projection area of ​​the second inductance element L2 can be set to have no overlapping part in the direction perpendicular to the substrate 4, thereby ensuring that the first inductance element L1 and the second inductance element L2 are directly at a distance greater than the preset conductor distance, so as to reduce the mutual coupling coefficient between the inductors.

[0091] Preferably, in the present invention, the positions of the first inductor element L1 and the first capacitor element C1 on the substrate 4 can be arranged so that the projection area of ​​the first inductor element L1 and the projection area of ​​the first capacitor element C1 at least partially overlap in a direction perpendicular to the substrate 4, thereby reducing the layout area.

[0092] In another specific implementation, the resonant structure may also be embedded inside the substrate 4 , thereby reducing the thickness of the resonant structure to a certain extent.

[0093] In another specific implementation, the projection area of ​​the first inductor element L1 and the projection area of ​​the first capacitive element C1 may not overlap in the direction perpendicular to the substrate 4 .

[0094] The value of the size-to-wavelength ratio of the resonant structure is 10 -4 Order of magnitude; the size-to-wavelength ratio is determined based on the size of the resonant structure and the wavelength of the signal to be processed.

[0095] The size of a resonant structure may be the area occupied by the multiple elements that the resonant structure comprises; for example Figure 4 As shown, the size from one end of the first capacitor element C1 away from other elements to one end of the second inductor element L2 away from other elements is 120μm; the size from one end of the second capacitor element C2 away from other elements to one end of the third capacitor element C3 away from other elements is 130μm, then the size of the resonant structure can be 120μm×130μm; the wavelength can be the wavelength corresponding to the signal processed by the resonant structure, that is, the wavelength of the signal to be processed; the size-to-wavelength ratio can be the ratio of the size of the resonant structure to the area corresponding to the wavelength, where the area of ​​the wavelength can be obtained based on wavelength*wavelength.

[0096] The resonant structure with the stacked body 1 formed by the above arrangement can have a size-to-wavelength ratio of 10 -4 Compared with the existing technology, most of the size-to-wavelength ratio is 10 -5 The resonant structure of the present invention can significantly reduce the size, and this effect will be verified in combination with a specific simulation process later.

[0097] The resonant structure disclosed in the present invention can be integrated into any application scenario that can adapt to the resonant structure, such as a filter, a duplexer, an amplifier, etc.

[0098] In the prior art, for the arrangement of the T-type inductor structure, most of the inductors in the T-type inductor structure are arranged in a coil shape, such as Figure 7As shown, two coil-shaped conductors form two inductors and are connected in series, and a coil-shaped conductor is connected in parallel between the two coil-shaped conductors to form a third inductor. That is, most T-type inductor structures in the prior art use three inductor elements, and each inductor element is formed by a coil-shaped conductor; and according to the embodiments of the present invention and Figure 4-7 It can be seen that the inductance element group C included in the resonant structure can be formed by a coil-shaped conductor as a first inductance element L1, and by a zigzag conductor as a second inductance element L2, and the second inductance element L2 is connected in parallel at the center tap position 2 of the first inductance element L1, that is, the T-type inductance structure disclosed in the present invention can use at least two inductance elements, and one of the inductance elements can also be formed by a zigzag conductor; compared with the prior art, the resonant structure described in the present application reduces the use of coil-shaped conductors in the arrangement design, thereby reducing the size occupied by the inductance element in the resonant structure; at the same time, it can also take into account the working performance of the resonant structure.

[0099] Embodiment three:

[0100] In another embodiment, the resonant structure may also be arranged as follows:

[0101] The resonant structure comprises at least two conductive layers and at least one insulating layer;

[0102] The at least two conductive layers are configured as a first capacitive element C1, a second capacitive element C2 and a third capacitive element C3; the first inductor element L1 is formed into a coil shape by at least one conductive layer; the second inductor element L2 is formed by the at least one conductive layer;

[0103] The at least one insulating layer is disposed between the at least two conductive layers.

[0104] In a specific embodiment, the resonant structure is arranged on the substrate 4, the first capacitor element C1 can be arranged on a conductive layer, the second capacitor element C2 and the third capacitor element C3 can be arranged on another conductive layer, that is, at least two conductive layers are configured as the first capacitor element C1, the second capacitor element C2 and the third capacitor element C3; the first inductor element L1 can be arranged in a coil shape on a conductive layer, and the second inductor element L2 can be arranged on the same conductive layer as the first inductor element L1.

[0105] In another specific implementation, the first inductor element L1 may also be arranged in a coil shape on multiple conductive layers.

[0106] In another specific implementation, the first inductor element L1 and the second inductor element L2 may also be formed separately in one conductive layer, that is, the first inductor element L1 and the second inductor element L2 are formed in different conductive layers.

[0107] In another specific embodiment, the second capacitor element C2 and the third capacitor element C3 may also be formed separately in one conductive layer, that is, the second capacitor element C2 and the third capacitor element C3 are formed in different conductive layers.

[0108] Arranging the various elements in a stacked manner to form a resonant structure can reduce the size of the resonant structure in the horizontal direction.

[0109] Embodiment 4:

[0110] Furthermore, the resonant structure of the present invention can be applied to a high-pass filter; Figure 8 Application provided by the embodiment of the present invention Figure 1 The simulation data corresponding to the filter of the resonant structure will be combined with Figure 8 The simulation of the high-pass filter applied to the resonant structure is further elaborated to verify the filtering performance of the resonant structure.

[0111] The formula for calculating the transmission coefficient is:

[0112]

[0113] Among them, S 21 is the transmission coefficient, which indicates the signal transmission strength from the first port to the second port. Figure 1 determine its location; is the reflection coefficient, and its calculation formula is:

[0114]

[0115] Where Z0 is the terminal impedance, and are the odd-mode transmission impedance and even-mode input impedance of the half circuit with the central axis as the dividing line; let S 21 = 0, which can be derived based on the calculation formula of transmission coefficient and reflection coefficient Then we get formula (1):

[0116]

[0117] Wherein, L1 may be the inductance value of the first inductor element, L2 may be the inductance value corresponding to the second inductor element, C1 may be the capacitance value of the first capacitor element, C2 may be the capacitance value of the second capacitor element, and C3 may be the capacitance value of the third capacitor element; since C2=C3, C2 may be used instead of C3 in each formula;

[0118] Solving this formula (1), we can get:

[0119] k1f 4 +k2f 2 +k3=0 (2)

[0120] in,

[0121] k1=32π 4 C1C2L1(L1+L2)

[0122] k2=-4π 2 (4C1L1+C2L2+2C1L2)

[0123]

[0124] When C1>>C0, equation (2) can be simplified as:

[0125] k1f 2 +k2=0 (3)

[0126] From this formula, the transmission zero point can be obtained as:

[0127]

[0128] According to the above theoretical derivation, it can be seen from the various formulas that when C2>>C1, the transmission zero point will not be affected by C2, so it can be concluded that by adjusting the capacitance value of the second capacitor element and the capacitance value of the third capacitor element, the suppression capability of the resonant structure for interference signals can be achieved. Preferably, when the capacitance value of the second capacitor element and the capacitance value of the third capacitor element are reduced, the out-of-band suppression characteristics of the resonant structure can be effectively adjusted.

[0129] In addition, by adjusting C1, C2, L1, and L2, that is, adjusting the parameters of each capacitor element and each inductor element, the operating frequency band and the transmission zero point of the resonant structure can be adjusted to achieve filtering of signals of different frequencies.

[0130] Figure 7 The simulation results of applying the resonant structure of the present invention to a high-pass filter with parameters of C1=99fF, C2=C3=500fF, L1=490pH, and L2=12pH are shown. In this embodiment, C2=C3=5*C1. The filter using the resonant structure generates a transmission zero at 34GHz; in the frequency band greater than 30GHz, the loss is about 0.1dB, and the return loss is about 15dB; in the frequency band from 7Hz to 20GHz, the out-of-band suppression is 20dB to 50dB.

[0131] In the embodiment of the present invention, based on Figure 1 The structural diagram shown and / or based on Figure 4The structure shown in the figure forms a resonant structure, which can be designed and implemented based on a 0.13μm SiGe BiCMOS process (an integrated circuit process that combines silicon-germanium alloy Si Ge with bipolar transistor BiCMOS). The size of the resonant structure, that is, the area occupied by multiple components included in the resonant structure, can be 0.12×0.13mm 2 , the wavelength corresponding to the center frequency of 30 GHz can be 10 mm, and the size-to-wavelength ratio can be 1.56×10 -4 Compared with conventional structures, such as a miniaturized high-pass filter structure based on a multi-section LC structure, the resonant structure of the present invention achieves an extremely compact layout size, with a size-to-wavelength ratio of only one-tenth of that of conventional structures, effectively reducing the size of the resonant structure.

[0132] An embodiment of the present invention also relates to a filter, which includes the above-mentioned resonant structure; it should be noted that the above-mentioned resonant structure can be applied to a high-pass filter, or other filters that can achieve the same technical effect; for different filters, by adjusting the parameters of each inductor element in the inductor element group in the resonant structure and the parameters of each capacitor element in the capacitor element group, the operating frequency band and transmission zero point of the filter can be adjusted to achieve filtering of signals of different frequencies.

[0133] An embodiment of the present invention also relates to an electronic device, which includes the above-mentioned resonant structure or filter; it should be pointed out that the electronic device can be any setting that can carry the resonant structure or the filter, such as WIFI, drone, radio frequency transmitter, radar transceiver, etc.

[0134] It can be seen from the embodiments provided by the present invention that, in the present invention, by changing the connection mode between the inductance elements, the first inductance element and the second inductance element are connected, and the two are integrated into a T-type inductance device. Compared with the parallel arrangement of the inductance elements, the space occupied by the inductance elements can be reduced, thereby reducing the size of the resonant structure; at the same time, the second inductance element is respectively connected to the center tap of the first inductance element, so that half of the first inductance element, the second inductance element and the capacitor element group, and the other half of the first inductance element, the second inductance element and the capacitor element group, respectively constitute a resonator, which can reduce the number of inductance elements while taking into account the filtering performance of the resonant structure, thereby reducing the size of the resonant structure to a certain extent; in addition, by setting the capacitor element group, by adjusting the capacitance value of the capacitor element in the capacitor element group, the out-of-band suppression characteristics of the resonant structure can be adjusted.

[0135] It should be noted that various embodiments of the present disclosure have been described above, and the above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and changes are obvious to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The choice of terms used in this article is intended to best explain the principles of the embodiments, practical applications, or technical improvements in the market, or to enable other ordinary skill in the art to understand the embodiments disclosed herein.

Claims

1. A resonant structure, characterized in that: The resonant structure comprises: An inductor element group (L) and a capacitor element group (C); the inductor element group (L) is electrically connected to the capacitor element group (C); The capacitor element group (C) includes at least two capacitor elements; the inductor element group (L) includes a first inductor element (L1) and a second inductor element (L2); The first inductor element (L1) comprises a first end and a second end respectively connected to the capacitor element group (C), the first end of the second inductor element (L2) is connected to the center tap of the first inductor element (L1), and the second end of the second inductor element (L2) is grounded; The inductance value on the path from the first end of the first inductance element (L1) to the first end of the second inductance element (L2) is equal to the inductance value from the second end of the first inductance element (L1) to the first end of the second inductance element (L2).

2. A resonant structure according to claim 1, characterized in that: The resonant structure comprises a stacked body (1); The first inductance element (L1) is composed of a coil-shaped conductor (LA1) formed on the laminate (1), and the second inductance element (L2) is composed of a meander-shaped conductor (LA2) formed on the laminate (1); The first end of the zigzag conductor (LA2) is connected to the center tap position (2) of the coil-shaped conductor (LA1) by a connecting conductor (3) in a via direct connection manner; wherein the center tap position (2) is a position on the coil-shaped conductor (LA1) corresponding to half of the effective inductance value of the first inductor element (L1).

3. A resonant structure according to claim 2, characterized in that: The conductor width of the connecting conductor (3) is greater than the conductor width of the coil-shaped conductor (LA1), and the conductor width of the connecting conductor (3) is greater than the conductor width of the zigzag line conductor (LA2).

4. A resonant structure according to claim 2, characterized in that: The distance between the coil in the coil-shaped conductor (LA1) located on a side close to the zigzag-line conductor (LA2) and the zigzag-line conductor (LA2) is greater than a preset conductor distance.

5. A resonant structure according to claim 2, characterized in that: The capacitor element group (C) includes a first capacitor element (C1), a second capacitor element (C2) and a third capacitor element (C3); A first end of the first capacitor element (C1) is connected in parallel with a first end of the second capacitor element (C2), and a second end of the first capacitor element (C1) is connected in parallel with a second end of the third capacitor element (C3).

6. A resonant structure according to claim 5, characterized in that: The second end of the second capacitor element (C2) is connected in series with the first end of the first inductor element (L1), and the first end of the third capacitor element (C3) is connected in series with the second end of the first inductor element (L1); the second capacitor element (C2) and the third capacitor element (C3) are used to adjust the suppression performance of the resonant structure on interference signals.

7. A resonant structure according to claim 6, characterized in that: The laminate (1) comprises a metal layer and an insulating layer; The first capacitor element (C1) is composed of a first electrode plate (CA1), a first insulating layer (CB1) and a second electrode plate (CA2) which are opposite to each other in the stacking direction of the metal layer and the insulating layer; The second capacitor (C2) is composed of a third electrode (CA3), a second insulating layer (CB2) and a fourth electrode (CA4) which are opposite to each other in the stacking direction of the metal layer and the insulating layer; The third capacitor (C3) is composed of a fifth electrode (CA5), a second insulating layer (CB3), and a sixth electrode (CA6) which are opposed to each other in the stacking direction of the metal layer and the insulating layer.

8. A resonant structure according to claim 7, characterized in that: The capacitance value of the second capacitance element (C2) is equal to the capacitance value of the third capacitance element (C3); The capacitance value of the second capacitance element (C2) and the capacitance value of the third capacitance element (C3) are at least 5 times the capacitance value of the first capacitance element (C1).

9. A resonant structure according to claim 1, characterized in that: The resonant structure is arranged on a substrate (4); in a direction perpendicular to the substrate (4), a projection of the first inductance element (L1) and a projection of the first capacitance element (C1) at least partially overlap.

10. The resonant structure according to claim 1, characterized in that: The resonant structure is arranged on a substrate (4); in a direction perpendicular to the substrate (4), a projection of the first inductance element (L1) and a projection of the second inductance element (L2) do not overlap.

11. The resonant structure according to any one of claims 1 to 10, characterized in that: The value of the size-to-wavelength ratio of the resonant structure is 10 -4 Order of magnitude; the size-to-wavelength ratio is determined based on the size of the resonant structure and the wavelength of the signal to be processed.

12. The resonant structure according to claim 11, characterized in that: The resonant structure further comprises a first port (5) and a second port (6); A high-pass filter characteristic is exhibited between the first port (5) and the second port (6).

13. A filter, characterized in that: The filter comprises a resonant structure as claimed in any one of claims 1-12.

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