Biomaterial resistive random access memory and preparation method and application thereof

Abstract

The invention provides a biomaterial resistive random access memory and a preparation method and application thereof. The biomaterial resistive random access memory is prepared by depositing a precursor solution prepared from lotus leaf powder and a medium on a substrate to form a film, drying the film to form a thin film, and sputtering and depositing Ag on the thin film. The thin film, namely the lotus leaf composite film, is prepared from the lotus leaf powder and the medium, then the lotus leaf composite film is prepared into the resistive random access memory, and the natural lotus leaf has stable bipolar resistance change, stable negative differential resistance (NDR) effect, capacitance effect and the like. Therefore, the biomaterial resistive random access memory has stable bipolar resistance change, stable negative differential resistance (NDR) effect and capacitance effect.

Description

Technical Field

[0001] The present invention relates to the technical field of diamond detection, and in particular to a biomaterial resistive random access memory and a preparation method and application thereof. Background Art

[0002] Neuromorphic computing is one of the leading candidates for the next generation of computers. In brain-like neuromorphic systems, processing units are combined with memory units, which will completely change traditional computing systems and overcome the "von Neumann" bottleneck. Resistive memory computing has been shown to be superior in brain-like computing. Resistive memory can implement neural network algorithms, and its conductance is used to represent the connection strength between adjacent neurons. Therefore, it is one of the candidates for developing artificial synaptic devices.

[0003] Different materials, such as metal oxides, polymers, and perovskites, have been used to make artificial synaptic devices. As people's requirements for electronic devices become higher and higher, the harmful substances in electronic devices are becoming more and more harmful to the environment.

[0004] Therefore, degradable biomaterials have attracted widespread attention. Compared with other devices that simulate synaptic sensing, biomaterials also have unique advantages in compatibility with the human body. And biomaterials have inherent advantages such as biodegradability, renewability, environmental friendliness and low cost. However, most biomaterials currently only have simple resistive switching functions. When continuous pulses are applied to the resistive memory, the conductance of the device gradually increases or decreases, which corresponds to the increase or decrease in the biological synaptic weight. If different conductance trends can be observed by applying different voltage pulses, it will provide more possibilities for the application of adjustable conductance resistive memory devices based on biomaterials in synaptic simulation. Electronic devices based on biomaterials have significant advantages such as biocompatibility and degradability, and are expected to play an important role in green electronic storage and brain-like synaptic devices in the future. However, the development of electronics based on biomaterials is still in its infancy, and biological samples need to be deviceized before this technology can be widely used.

[0005] Currently, the more commonly used methods for thin film preparation are: magnetron sputtering, laser pulse deposition, chemical vapor deposition, etc., but these methods have disadvantages such as slow film growth, poor functional stability, susceptibility to interference from external factors, and expensive equipment. In addition, most of the current biomaterial resistive memory only has simple resistive switching functions.

[0006] The invention patent with publication date of 2017.08.29 and publication number of CN 107104184 A discloses a sol-gel film flexible resistive random access memory and a preparation method thereof. The resistive random access memory comprises a bottom electrode, a storage medium layer arranged on the upper surface of the bottom electrode, and a top electrode arranged on the upper surface of the storage medium layer. The bottom electrode is composed of a transparent conductive oxide film, the storage medium layer is a metal oxide sol-gel film treated with deep ultraviolet light, and the top electrode is a metal aluminum layer. The preparation method of the sol-gel film flexible resistive random access memory is as follows: 1. Preparation of the bottom electrode; 2. Preparation of an AlOx sol-gel film on the bottom electrode; 3. Under room temperature conditions, treating the AlOx sol-gel film with deep ultraviolet light to obtain a storage medium layer; 4. Preparation of the top electrode.

[0007] However, the above patent has a single functionality and cannot achieve the transition of bipolar resistive switching states, let alone be applied to neural networks. Summary of the invention

[0008] In view of the above technical problems, the present invention proposes a biomaterial resistive memory and its preparation method and application, which are used to solve the problem that the resistive memory in the prior art cannot realize the transition of bipolar resistive state. The present invention can realize the artificial synaptic function effect of the biomaterial resistive memory through the combination of capacitance dominant state (CDS) and memristor dominant state (MDS), and this function can be applied to reservoir computing system and neural network.

[0009] In order to achieve the above object, the technical solution of the present invention is achieved as follows: A biomaterial resistive random access memory, wherein the biomaterial resistive random access memory is formed by depositing a precursor solution made of lotus leaf powder mixed with a binder and a solvent on a substrate, drying it into a thin film, and sputtering and depositing Ag on the thin film. The present invention uses lotus leaves to make a resistive random access memory, and the lotus leaves have stable bipolar resistive random access, stable negative differential resistance (NDR) effect, and capacitance effect, etc., so that the biomaterial resistive random access memory has stable bipolar resistive random access, stable negative differential resistance (NDR) effect, and capacitance effect.

[0010] Furthermore, the binder includes polyvinylidene fluoride, the solvent includes N-methylpyrrolidone, the lotus leaf powder and polyvinylidene fluoride are mixed in proportion and dissolved in N-methylpyrrolidone, and a precursor solution is obtained after stirring and aging.

[0011] Furthermore, the lotus leaf powder is nano-scale lotus leaf powder.

[0012] Furthermore, the mixing ratio of the lotus leaf powder to polyvinylidene fluoride is (4-10):1.

[0013] Furthermore, the substrate is an ITO substrate; the substrate is cleaned with a cleaning agent.

[0014] Furthermore, the cleaning reagent includes one or more of acetone, anhydrous ethanol, and deionized water.

[0015] A method for preparing a biomaterial resistive random access memory comprises the biomaterial resistive random access memory as described in any one of the above, and further comprises the following steps: S1. Mix lotus leaf powder and polyvinylidene fluoride in a ratio of (4-10):1, dissolve in N-methylpyrrolidone, and obtain a precursor solution by magnetic stirring and aging; S2, select ITO as the substrate, clean the substrate, blow dry it with nitrogen, and put it into a vacuum ion cleaning machine for irradiation treatment; S3, using a spin coating method on the substrate to form a thin film of the precursor solution on the substrate; S4. On the prepared film, use an ion sputtering device to sputter-deposit Ag on the film as a top electrode.

[0016] Furthermore, during the spin coating process of step S3, the turntable for spin coating is rotated from low speed to high speed, and the spin coating is performed at a low speed of 800 rpm for 20 to 40 s, and at a high speed of 2000 rpm for 40 to 60 s.

[0017] Furthermore, the pressure of the ion sputtering apparatus in step S4 during the ion process is set to 5-7 Pa, the current is stabilized at 21 mA, and the sputtering time is 80-120 s.

[0018] The application of the biomaterial resistive random access memory described in any one of the above items is applied in a reservoir computing system and a neural network.

[0019] Beneficial effects of the present invention: 1. The present invention uses lotus leaf powder to make a lotus leaf composite film, and the lotus leaf composite film is made into a resistive random access memory. The lotus leaf composite film has stable bipolar resistive random access, stable negative differential resistance (NDR) effect and capacitance effect, etc., so that the biomaterial resistive random access memory has stable bipolar resistive random access, stable negative differential resistance (NDR) effect and capacitance effect; 2. The present invention uses a sol-gel method to prepare a lotus leaf composite film using lotus leaf powder, and then uses the lotus leaf composite film to prepare the Ag / lotus leaf composite film / ITO biomaterial resistive random access memory of the present invention, which has a simple preparation process, low cost, and is easy to prepare on a large scale; 3. When the external voltage of the resistive memory of the present invention is less than 1V, the device is in a capacitance dominant state (CDS) and a memristor dominant state (MDS); when the external voltage of the resistive memory is greater than 1V, the device changes from CDS to MDS, so that the present invention has a bipolar resistive state; 4. The present invention realizes the conversion between the capacitance dominant state (CDS) and the memristor dominant state (MDS) in a controllable manner by changing the applied voltage, thereby obtaining more device functions; 5. Under the action of forward voltage pulses of different amplitudes, the conductivity of the resistive random access memory in a single pulse interval shows an upward or downward trend, which corresponds to the increase or decrease of the biological synaptic weight; 6. The present invention can realize the artificial synaptic function effect of Ag / lotus leaf composite film / ITO resistive random access memory through the combination of capacitance dominant state (CDS) and memristor dominant state (MDS), which can be applied to reservoir computing system and neural network. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1 It is an element analysis characterization diagram of the resistive random access memory of the present invention; Figure 2 This is a characterization diagram of infrared absorption spectrum detection of the resistive random access memory of the present invention; Figure 3 An electron scanning microscope image of a cross section of the resistive random access memory of the present invention; Figure 4 1 is a linear IV diagram of the resistive random access memory with different ratios of the present invention; Figure 5 The logarithmic IV diagram of the resistive random access memory with different ratios of the present invention; Figure 6 The IV curve of the resistive random access memory manufactured in Example 1 of the present invention at 1 V; Figure 7 The logarithmic-linear IV curve of the resistive random access memory manufactured in Example 1 of the present invention at 1 V; Figure 8 The IV curve of the resistive random access memory manufactured in Example 1 of the present invention at 2 V; Fig. 9The logarithmic-linear IV curve of the resistive random access memory manufactured in Example 1 of the present invention at 2 V; Fig.10 Endurance characteristic test of the resistive random access memory manufactured in Example 1 of the present invention; Fig.11 The pulse measurement diagram of the present invention; (a) is the response after applying pulse Pulse A, Pulse A: low level is 0.4 V, pulse width is 20 ms, high level is 0.9 V, pulse width is 60 ms; (b) is the response after applying Pulse B, Pulse B: low level is 0.4 V, pulse width is 20 ms; high level is 1.7 V, pulse width is 60 ms; (c) is a partial enlarged view of (a); (d) is a partial enlarged view of (b); Fig.12 The present invention is a flow chart of the preparation of the resistive random access memory; Fig.13 It is a schematic diagram of the structure of the resistive random access memory of the present invention. DETAILED DESCRIPTION

[0022] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0023] The biomaterial resistive random access memory described in the present invention is prepared by mixing lotus leaf powder with a binder and a solvent to form a precursor solution. In this embodiment, the binder is PVDF (polyvinylidene fluoride), and the solvent is NMP (N-methylpyrrolidone). Specifically, lotus leaf powder and PVDF (polyvinylidene fluoride) are mixed in proportion and dissolved in NMP (N-methylpyrrolidone) to form a precursor solution. The precursor solution is deposited on a substrate to form a film, and then dried to form a thin film, namely a lotus leaf composite film, and Ag is sputtered and deposited on the film as a top electrode.

[0024] Furthermore, the lotus leaf powder is nano-scale lotus leaf powder.

[0025] Furthermore, the mixing ratio of the lotus leaf powder to polyvinylidene fluoride is (4-10):1.

[0026] Further, the substrate is an ITO (indium tin oxide) substrate; the substrate is cleaned with a cleaning agent. The cleaning agent includes one or more of acetone, anhydrous ethanol, and deionized water. In this embodiment, acetone, anhydrous ethanol, and deionized water are used to clean the substrate. In another embodiment, one or two of them can also be used to clean the substrate.

[0027] The structure of the resistive memory is as follows: Fig.13 As shown, the Louts leaf in the figure refers to the lotus leaf composite film.

[0028] The present invention has made some basic performance characterizations on the resistive random access memory, including: electron scanning microscopy (SEM), elemental analysis (EDS), and infrared absorption spectroscopy.

[0029] Elemental analysis of resistive memory Figure 1 As shown, we can see that in addition to the common carbon and oxygen elements in organic matter, there are also sodium, potassium, calcium, etc.

[0030] according to Figure 2 The infrared absorption spectrum of the lotus leaf powder shows that there is a relatively specific structure. −1 The vibration at 2912 cm-1 is attributed to the stretching vibration of the hydroxyl group (-OH). - 1 The band at 1610 cm-1 corresponds to the anti-stretching vibration of CH2 (methylene) in starch molecules. The free carboxyl group (COO) of carbohydrates appears at 1610 cm-1. -1 The oxygen atoms in these highly polar groups tend to interact strongly with metal ions, promoting the conductivity of the cations.

[0031] Scanning electron microscope (SEM) can observe the morphology of the film surface and cross section. Through SEM, the cross section of the resistive memory can be observed, such as Figure 3 shown.

[0032] Example 1 like Fig.12 As shown, a method for preparing a biomaterial resistive random access memory of the present invention comprises the following specific steps: 1. Grind the lotus leaf to obtain nano-scale powder, mix the powder with PVDF (polyvinylidene fluoride) in a ratio of 10:1, dissolve in NMP (N-methylpyrrolidone), and obtain a precursor solution through magnetic stirring and aging; PVDF (polyvinylidene fluoride) is used to prevent the film from breaking during the drying process; 2. Select ITO (indium tin oxide) as the substrate and clean the substrate. The cleaning reagents are acetone, anhydrous ethanol, and deionized water for ultrasonic cleaning for 15 minutes. After cleaning, blow dry with nitrogen. Pump the plasma cleaning machine to a vacuum state in advance, and finally place the substrate in the plasma cleaning machine for irradiation treatment. 3. Spin coating is used on the substrate to form a uniform thin film, namely the lotus leaf composite film, on the substrate with the precursor solution, and then the film is placed in a vacuum drying oven for baking and curing. The instrument used in the spin coating method is a glue spreader. During the process, the vacuum pump first adsorbs the substrate on the turntable of the glue spreader, and then the configured thin film precursor solution is dripped on the substrate. Different materials require different speeds to be set, and the turntable is rotated from low speed to high speed. Spin coating is performed at a low speed of 800 rpm for 30 s and at a high speed of 2000 rpm for 60 s, so that the precursor solution is deposited on the ITO substrate to form a film; under the action of centrifugal force, the solution will diffuse to the periphery and form a uniform thin film. Different speeds can change the thickness and quality of the film, and are also affected by factors such as solution concentration, viscosity and temperature. However, after spin coating, the film is only attached to the substrate and is not stable, so the substrate with the film needs to be placed on a heating table for baking and curing.

[0033] 4. On the prepared film, use an ion sputtering device to deposit Ag as the top electrode. Specifically, after the film is prepared, use an ion sputtering device to deposit Ag as the top electrode. The operation steps are to put the mask and the sample together, and then put them into the cavity of the sputtering device. Then set the pressure, current intensity and time. The pressure is set to 6 Pa, the current is stable at about 21mA, and the sputtering time is about 100s. When pumping, it is necessary to ensure that the cavity is a vacuum environment. To this end, a mechanical pump is used to evacuate the cavity. In order to ensure the appropriate thickness of the film, sputtering is generally required 4 to 5 times. Finally, the Ag / lotus leaf composite film / ITO resistive variable sensor of the present invention is made.

[0034] Example 2 like Fig.12 As shown, a method for preparing a biomaterial resistive random access memory of the present invention comprises the following specific steps: 1. Grind the lotus leaves to obtain nano-scale powder, mix the powder with PVDF (polyvinylidene fluoride) in a ratio of 8:1, dissolve in NMP (N-methylpyrrolidone), and obtain a precursor solution through magnetic stirring and aging; PVDF (polyvinylidene fluoride) is used to prevent the film from breaking during the drying process; 2. Clean the ITO substrate with deionized water, acetone and alcohol in turn. Then use an air gun to remove the residual solution on the substrate, and finally use a plasma cleaner to clean the ITO substrate for 30 minutes; 3. The prepared precursor solution is deposited on the ITO substrate by spin coating to form a film; during the process, the spin coating is performed at a low speed of 800 rpm for 20 s and at a high speed of 2000 rpm for 60 s, so that the precursor solution is deposited on the ITO substrate to form a film; since after spin coating, the film is only attached to the substrate and is not stable, the deposited leaf PVDF film needs to be dried in a vacuum drying oven for 24 hours to remove any volatile components; 4. Finally, the top electrode Ag is deposited on the thin film on the ITO substrate by ion sputtering. The operation steps are to assemble the mask and the sample together, and then put them into the cavity of the sputtering instrument. Then set the pressure, current intensity and time. The pressure is set to 5Pa, the current is stable at about 21mA, and the sputtering time is about 120s. When pumping, it is necessary to ensure that the cavity is a vacuum environment. For this purpose, a mechanical pump is used to evacuate the cavity. In order to ensure the appropriate thickness of the film, sputtering is performed 4 times during the process. Finally, the Ag / lotus leaf composite film / ITO resistive variable sensor of the present invention is made.

[0035] Example 3 like Fig.12 As shown, a method for preparing a biomaterial resistive random access memory of the present invention comprises the following specific steps: 1. Grind the lotus leaves to obtain nano-scale powder, mix the powder with PVDF (polyvinylidene fluoride) in a ratio of 6:1, dissolve in NMP (N-methylpyrrolidone), and obtain a precursor solution through magnetic stirring and aging; PVDF (polyvinylidene fluoride) is used to prevent the film from breaking during the drying process; 2. Clean the ITO substrate with deionized water, acetone and alcohol in turn. Then use an air gun to remove the residual solution on the substrate, and finally use a plasma cleaner to clean the ITO substrate for 20 minutes; 3. The prepared precursor solution is deposited on the ITO substrate by spin coating to form a film; during the process, the spin coating is performed at a low speed of 800 rpm for 40 s and at a high speed of 2000 rpm for 40 s, so that the precursor solution is deposited on the ITO substrate to form a film; since after spin coating, the film is only attached to the substrate and is not stable, the deposited leaf PVDF film needs to be dried in a vacuum drying oven for 24 hours to remove any volatile components; 4. Finally, the top electrode Ag is deposited on the thin film on the ITO substrate by ion sputtering. The operation steps are to put the mask and the sample together, and then put them into the cavity of the sputtering instrument. Then set the pressure, current intensity and time. The pressure is set to 6 Pa, the current is stable at about 21mA, and the sputtering time is about 100s. When pumping, it is necessary to ensure that the cavity is a vacuum environment. For this purpose, a mechanical pump is used to evacuate the cavity. In order to ensure the appropriate thickness of the film, sputtering is performed 5 times during the process. Finally, the Ag / lotus leaf composite film / ITO resistive variable sensor of the present invention is made.

[0036] Example 4 like Fig.12 As shown, a method for preparing a biomaterial resistive random access memory of the present invention comprises the following specific steps: 1. Grind the lotus leaf to obtain nano-scale powder, mix the powder with PVDF (polyvinylidene fluoride) in a ratio of 4:1, dissolve in NMP (N-methylpyrrolidone), and obtain a precursor solution through magnetic stirring and aging; the PVDF (polyvinylidene fluoride) is used to prevent the film from breaking during the drying process; 2. Clean the ITO substrate with deionized water, acetone and alcohol in turn. Then use an air gun to remove the residual solution on the substrate, and finally use a plasma cleaner to clean the ITO substrate for 25 minutes; 3. The prepared precursor solution is deposited on the ITO substrate by spin coating to form a film; during the process, the spin coating is performed at a low speed of 800 rpm for 30 seconds and at a high speed of 2000 rpm for 50 seconds, so that the precursor solution is deposited on the ITO substrate to form a film; since after spin coating, the film is only attached to the substrate and is not stable, the deposited leaf PVDF film needs to be dried in a vacuum drying oven for 24 hours to remove any volatile components; 4. Finally, the top electrode Ag is deposited on the thin film on the ITO substrate by ion sputtering. The operation steps are to assemble the mask and the sample together, and then put them into the cavity of the sputtering instrument. Then set the pressure, current intensity and time. The pressure is set to 7Pa, the current is stable at about 21mA, and the sputtering time is about 80s. When pumping, it is necessary to ensure that the cavity is a vacuum environment. For this purpose, a mechanical pump is used to evacuate the cavity. In order to ensure the appropriate thickness of the film, sputtering is performed 5 times during the process. Finally, the Ag / lotus leaf composite film / ITO resistive variable sensor of the present invention is made.

[0037] The IV curves and IV semi-logarithmic curves of the resistive random access memories made in the above four embodiments are shown in FIG. Figure 4 and Figure 5 As shown. The present invention found NDR and capacitance effects similar to those of natural lotus leaves in the resistive memory sample made of lotus leaf powder and PVDF in a mixing ratio of 10:1, that is, the resistive memory sample made in Example 1. Therefore, the DC characteristics and pulse characteristics of the sample were tested. By applying a scanning voltage of 0 V→1 V→0 V→−1 V→0 V, the device was in a traditional memristor-dominated state (MDS) with a switching ratio greater than 10 2 When the voltage changes from −0.05 V to 0 V, the device exhibits the NDR effect. And when the voltage reaches 0 V, the current becomes negative, which is a typical case where the capacitance dominates. Figure 6 and Figure 7When the scan voltage is further increased to 2 V, the IV curve of the device shows no switching ratio for several consecutive weeks in the negative voltage region, and then the switching ratio is close to 10 in several cycles, as shown in Figure 8 and Fig. 9 As shown. This indicates that the device also undergoes a non-volatile storage state during the transition from CDS to MDS. When a scan voltage of 1 V is applied, the applied voltage cannot cause redox reactions of silver ions, potassium ions, and sodium ions, but can cause these cations to move toward the negative electrode, resulting in a parallel plate capacitor structure. An internal electric field is formed, and an NDR effect is produced when −0.05 V is reflected in IV, that is, the strength of the built-in electric field is greater than the strength of the external electric field. When a scan voltage of 2 V is applied, the device cannot completely enter the MDS state, but it is sufficient to destroy the capacitor structure composed of anions and cations, as shown in Figure 2. Fig. 9 As shown, the NDR effect disappears, and in the absence of an on-off ratio, we call it the transition state of the device. As the number of scan cycles progresses, the on-off ratio of the device approaches 10, indicating that the device has entered the MDS state.

[0038] Furthermore, the present invention sets the pulse amplitude to about 1 V, so that the resistive memory changes from CDS to MDS. Fig.11 Pulse A: low level 0.4 V, pulse width 20 ms; high level 0.9 V, pulse width 60 ms. Pulse B: low level 0.4 V, pulse width 20 ms; high level 1.7 V, pulse width 60 ms.

[0039] By applying positive repetitive pulses, it can be found that the voltage peak and current peak have been well maintained, such as Fig.11 (a) and (b). Among them, Fig.11 (a) shows the response after applying Pulse A: low level is 0.4 V, pulse width is 20 ms, high level is 0.9 V, pulse width is 60 ms; Fig.11 (b) is the response after applying Pulse B. Pulse B: low level is 0.4 V, pulse width is 20 ms; high level is 1.7 V, pulse width is 60 ms. And under the stimulation of the same 0.4 V, 20 ms pulse, the current of the device shows different changes. Fig.11 As shown in (c) and (d), Fig.11 (c) Yes Fig.11 (a) Partially enlarged view, Fig.11 (d) Yes Fig.11(b) Partially enlarged image. Since the applied pulse amplitude is 0.4 V and 0.9 V, which does not exceed 1 V, the applied voltage cannot cause the redox reaction of silver ions, potassium ions, and sodium ions, but can make these cations move to the negative electrode, generate a parallel plate capacitor structure, and form an internal electric field. At this time, the device is in the CDS state, the built-in electric field plays a dominant role, and the direction of the electric field is opposite to the direction of the external electric field, so the current shows a downward trend. When the pulse amplitude is 0.4 V and 1.7 V, the device enters the MDS state, at which time 0.4 V and 1.7 V correspond to the high resistance state and low resistance state of the device, respectively. Without the constraint of the built-in electric field, the accumulation of the pulse effect is reflected in the increase of conductivity. By switching CDS and MDS at different voltages, the pulse current signal of the device can be switched between unidirectional and bidirectional. Therefore, these synaptic effects can be achieved by combining CDS and MDS, and can be applied to reservoir computing systems and neural networks.

[0040] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, a person of ordinary skill in the art should understand that any modification to the technical solutions described in the aforementioned embodiments, or any equivalent replacement of some or all of the technical features therein, within the spirit and principles of the present invention, and such modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention, and should all be included in the protection scope of the present invention.

Claims

1. A biomaterial resistive random access memory, characterized in that: The biomaterial resistive random access memory is made by depositing a precursor solution made by mixing lotus leaf powder, a binder and a solvent on a substrate, drying it into a thin film, and sputtering and depositing Ag on the thin film.

2. The biomaterial resistive random access memory according to claim 1, characterized in that: The binder includes polyvinylidene fluoride, the solvent includes N-methyl pyrrolidone, lotus leaf powder and polyvinylidene fluoride are mixed in proportion and dissolved in N-methyl pyrrolidone, and a precursor solution is obtained through stirring and aging.

3. The biomaterial resistive random access memory according to claim 2, characterized in that: The lotus leaf powder is nano-scale lotus leaf powder.

4. The biomaterial resistive random access memory according to claim 2 or 3, characterized in that: The mixing ratio of the lotus leaf powder to polyvinylidene fluoride is (4-10):

1.

5. The biomaterial resistive random access memory according to any one of claims 1 to 3, characterized in that: The substrate is an ITO substrate; the substrate is cleaned with a cleaning agent.

6. The biomaterial resistive random access memory according to claim 5, characterized in that: The cleaning reagent includes one or more of acetone, anhydrous ethanol, and deionized water.

7. A method for preparing a biomaterial resistive random access memory, characterized in that: The method comprises the biomaterial resistive random access memory according to any one of claims 1 to 6, further comprising the following steps: S1. Mix lotus leaf powder and polyvinylidene fluoride in a ratio of (4-10):1, dissolve in N-methylpyrrolidone, and obtain a precursor solution by magnetic stirring and aging; S2, select ITO as the substrate, clean the substrate, blow dry it with nitrogen, and put it into a vacuum ion cleaning machine for irradiation treatment; S3, using a spin coating method on the substrate to form a thin film of the precursor solution on the substrate; S4. On the prepared film, use an ion sputtering device to sputter-deposit Ag on the film as a top electrode.

8. The method for preparing a biomaterial resistive random access memory according to claim 7, characterized in that: During the spin coating process of step S3, the turntable for spin coating rotates from low speed to high speed, and the spin coating is performed at a low speed of 800 rpm for 20 to 40 seconds, and at a high speed of 2000 rpm for 40 to 60 seconds.

9. The method for preparing a biomaterial resistive random access memory according to claim 7, characterized in that: The pressure of the ion sputtering apparatus in step S4 during the ion process is set to 5-7 Pa, the current is stabilized at 21 mA, and the sputtering time is 80-120 s.

10. The use of the biomaterial resistive random access memory according to any one of claims 1 to 6, characterized in that: The biomaterial resistive random access memory is applied to a storage pool computing system and a neural network.

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