High bandwidth architecture for centralized coherence control at edge of processing tool

Abstract

Particular embodiments disclosed herein include a processing tool. In one particular embodiment, a processing tool includes a power source configured to power the cathode through the impedance matching network, an impedance matching network coupled to the power source, a cathode, and a processing module communicatively coupled to the power source and the impedance matching network.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to U.S. patent application No. 17 / 737,659 filed on May 5, 2022, the entire contents of which are incorporated by reference into this application. Technical Field

[0003] Particular embodiments relate to the field of semiconductor manufacturing and, more particularly, to control systems for impedance matching in semiconductor processing tools.

[0004] Description of the Prior Art

[0005] In a plasma processing tool, the plasma is ignited by a cathode coupled to a process gas in a chamber. In most tools, a power source is coupled to the cathode through an impedance matching network (sometimes simply referred to as a "match"). The match allows the impedance of the system to be adjusted to match the impedance of the load to which the cathode is coupled. The load has a wide range of impedances that are determined by parameters such as the processing conditions, chamber configuration, etc. Matching impedance is important to provide efficient power transfer from the source to the load.

[0006] Typically, matching networks are controlled by a distributed control architecture. In such systems, control is established locally in the system and the corresponding subsystems. Interaction between systems occurs through the network. Networked devices have low control bandwidth, high packet latency, and limited point-to-point coordination. Localized schemes inhibit higher degrees of coherence between coupled systems. Summary of the invention

[0007] Specific embodiments disclosed herein include a processing tool. In one specific embodiment, the processing tool includes a power supply, an impedance matching network coupled to the power supply, a cathode, and a processing module, wherein the power supply is configured to supply power to the cathode through the impedance matching network, wherein the processing module is communicatively coupled to the power supply and the impedance matching network.

[0008] The embodiments disclosed herein may further include a processing power control module. In one embodiment, the processing power control module includes a radio frequency platform board, a carrier card for an analog-to-digital converter (ADC), a heterogeneous computing module (HCM), a programmable logic board, a real-time processing unit (RTPU), and a communication controller.

[0009] The embodiments disclosed herein may further include a semiconductor processing tool. In one embodiment, the semiconductor processing tool includes a power supply, an impedance matching network coupled to the power supply, a cathode, and a processing module, wherein the power supply is configured to supply power to the cathode through the impedance matching network, wherein the processing module is communicatively coupled to the power supply and the impedance matching network, and wherein the processing module includes an RF platform board, a carrier card for an analog-to-digital converter (ADC), a heterogeneous computing module (HCM), a programmable logic board, a real-time processing unit (RTPU), and a communication controller. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a schematic diagram of a plasma processing tool including a centralized control architecture according to one embodiment.

[0011] Figure 2A is a schematic diagram of a plasma processing tool including a process power control module coupled to a matching network connected to a top cathode in the plasma processing tool according to one specific embodiment.

[0012] Figure 2B is a schematic diagram of a plasma processing tool including a process power control module coupled to a bias source at a substrate support in the plasma processing tool according to one specific embodiment.

[0013] Figure 2C is a schematic diagram of a plasma processing tool including a matching network for radio frequency control and non-sinusoidal control in the plasma processing tool according to one specific embodiment.

[0014] Figure 3A is a schematic diagram of a plasma processing tool having a single power supply with a single output according to one specific embodiment.

[0015] Figure 3B is a schematic diagram of a plasma processing tool having a single power supply and a pair of outputs according to one specific embodiment.

[0016] Figure 3C is a schematic diagram of a plasma processing tool having a pair of power supplies with a single output according to one specific embodiment.

[0017] Figure 3D is a schematic diagram of a plasma processing tool having a set of three power supplies and one output according to one specific embodiment.

[0018] Figure 4 is a schematic diagram of a power processing module according to a specific embodiment.

[0019] Figure 5A block diagram is shown of an exemplary computer system that may be used in conjunction with a processing tool according to one particular embodiment. DETAILED DESCRIPTION

[0020] The system described herein includes a semiconductor processing tool, and the semiconductor processing tool includes a control system for impedance matching in the semiconductor processing tool. In the following description, many specific details are set forth in order to provide a thorough understanding of the specific embodiments. It will be apparent to those with ordinary knowledge in the technical field of the present invention that these specific details are not required for the implementation of the specific embodiments. In other instances, well-known aspects are not described in detail to avoid unnecessarily obscuring the specific embodiments. In addition, it should be understood that the various specific embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale.

[0021] As described above, existing power supply control and related impedance matching networks have deficiencies. In a specific embodiment, there are different architectures that can achieve coherent control of power transmission. In a specific embodiment, the power delivery is controlled by a controller. The controller receives feedback from sensors provided before and after the impedance matching network. For example, the sensors can be current and voltage sensors. The sensor information can then be used to activate the variable capacitor in the matching piece to match the impedance of the load.

[0022] The specific embodiments are flexible to take into account different power delivery architectures. For example, one, two, three or more power supplies can be fed into the matching piece, and one, two or more outputs can be output from the matching piece. In this way, the power delivery architecture according to various specific embodiments can be flexibly met.

[0023] Reference now Figure 1 , a schematic diagram of a plasma processing tool 100 is shown according to one embodiment. In one embodiment, the plasma processing tool 100 includes a plasma chamber 120. The plasma chamber 120 includes a cathode 122 to couple received power to one or more gases flowing into the plasma chamber 120. In one embodiment, the plasma chamber 120 can be suitable for any plasma process of a typical semiconductor manufacturing environment. For example, the plasma chamber 120 can be a plasma etching chamber, a plasma deposition chamber, a plasma processing chamber, etc. In a specific embodiment, the plasma chamber 120 can be a plasma enhanced chemical vapor deposition (PECVD) chamber, a physical vapor deposition (PVD) chamber, or a plasma enhanced atomic layer deposition (PEALD) chamber.

[0024] In one embodiment, the plasma chamber 120 can be coupled to a power delivery architecture. For example, the power delivery architecture can include one or more power supplies 1321-132 nIn the illustrated embodiment, multiple power supplies 132 are shown. However, it should be understood that in some embodiments, a single power supply 132 may be used. In one embodiment, the power supply 132 may include any type of power supply. For example, the power supply 132 may be a radio frequency power supply, a microwave power supply, a direct current (DC) power supply, a pulsed DC power supply, etc.

[0025] In one specific embodiment, the power source 132 can be coupled to the cathode 122 via an impedance matching network 130. The impedance matching network 130 changes the impedance of the power delivery architecture to match the load in the chamber 120. Due to changes in processing conditions (e.g., gas flow rate, pressure, temperature, etc.), the impedance of the load may change. Therefore, the impedance matching network 130 is used to match the changing impedance in order to provide efficient power delivery into the chamber (i.e., no or minimal reflected power).

[0026] In one embodiment, sensors 151 and 152 may be disposed at opposite ends of impedance matching network 130. For example, sensors 1511-151 n The sensor 152 may be on the upstream side of the impedance matching network 130, while the sensor 154 may be on the downstream side of the impedance matching network 130. The "upstream" side may refer to the input side of the matching network 130, and the "downstream" side may refer to the output side of the matching network 130. As shown in the figure, multiple sensors 1511-151 n The impedance matching network 130 is provided on the upstream side. The number of sensors 151 can be equal to the number of power sources 132. In other words, each power source 132 can have a dedicated sensor 151. The downstream side of the impedance matching network 130 can have a single sensor 152. However, it should be understood that when there is more than one output from the matching network 130, there may be additional sensors 152. For example, in the case of two outputs (e.g., for the center of the chamber 120 and the edge of the chamber 120), there can be two sensors 152.

[0027] In one embodiment, sensors 151 and 152 can be any suitable sensor architecture that can be used to monitor the power flow from power source 132 to cathode 122. In one embodiment, sensors 151 and 152 are sensors for detecting voltage (V) and current (I). In one embodiment, sensor 151 is coupled to an electromagnetic signal of a power coupling transmission line. The power transmission cable (e.g., wire, etc.) passes through the center of the ring.

[0028] In one specific embodiment, sensors 151 and 152 may be communicatively coupled to processing module 134. As shown, Figure 11 and 15. A processing power control module 134 is provided in the tool 100. However, it should be understood that the processing module can be a microwave processing module 134, a DC processing module, etc., depending on what type of power supply 132 is included in the tool 100. In a specific embodiment, sensors 151 and 152 transmit voltage and / or current to the processing module 134. In a specific embodiment, the processing module 134 can have external links, such as ENET and ECAT links.

[0029] In one specific embodiment, the processing module 134 may be coupled to the impedance matching network via an analog / digital link. Through the analog / digital link, the processing module 134 may be able to send control signals to the impedance matching network 130. For example, the control signal may be used to adjust the capacitance value of a variable capacitor within the impedance matching network 130. In addition, the processing module 134 may be coupled to the power supply 132 via the analog / digital link. Thus, the processing module 134 is able to coordinate impedance tuning. In one specific embodiment, the analog / digital link may have a corresponding transceiver at each end of the link.

[0030] Reference now Figure 2A , a schematic diagram of a semiconductor processing tool 200 is shown according to additional specific embodiments. As shown, the processing tool 200 may include a chamber 220. A top electrode 222 may be provided as a lid of the chamber 220. A pedestal 223 may be provided within the chamber 220 for supporting a substrate 224. In a specific embodiment, the substrate 224 may be a semiconductor wafer or any other substrate typical of semiconductor processing operations. In a specific embodiment, the top electrode 222 may be coupled to a power delivery architecture.

[0031] In a specific embodiment, the power delivery architecture may include a power supply 232. The power supply 232 may be an RF power supply, a microwave power supply, a DC power supply, a pulsed DC power supply, etc. In a specific embodiment, the power supply 232 may be coupled to a processing module 234. In a specific embodiment, the power supply 232 may be a 13.56 MHz RF power supply. In a specific embodiment, the processing module 234 may include a current control module 241. In addition, the processing module may include an RF sensor processing block 242. The RF sensor processing block 242 may include circuitry for receiving and interpreting outputs from sensors 261 and 262. In a specific embodiment, the sensor 261 may be located on the upstream side of the impedance matching network 230, and the sensor 262 may be located on the downstream side of the impedance matching network 230. The sensors 261 and 262 may be current and voltage sensors.

[0032] In one embodiment, the processing module 234 may further include a tuning circuit 243 and a uniformity control block 244. The tuning circuit 243 and the uniformity control block 244 may be communicatively coupled to an actuator controller 235 in the impedance matching network 230. The actuator controller 235 may be actuated to change the capacitance of a variable capacitor within the impedance matching network 230 to control the impedance through the impedance matching network 230. In certain embodiments, the capacitor is a mechanical capacitor. In other embodiments, the capacitor is a solid-state capacitor.

[0033] Reference now Figure 2B , a schematic diagram of a semiconductor processing tool 200 is shown according to additional embodiments. In one embodiment, the processing tool 200 may include a chamber 220. A top electrode 222 may be provided as a lid of the chamber 220. In one embodiment, a pedestal 223 for supporting a substrate 224 may be located at the bottom of the chamber 220. In certain embodiments, the pedestal 223 may be coupled to one or more power supplies 232. Figure 2B In the illustrated embodiment, semiconductor processing tool 200 may include a first power source 2321 and a second power source 2322. It will be appreciated that one or more power sources 232 may be used in different embodiments.

[0034] In a specific embodiment, the power supply 232 can be coupled to the processing module 234. For example, the power supply 232 can be fed into the voltage controller 245. For example, the first power supply 2321 can be a 2 MHz RF power supply, and the second power supply 2322 can be a 13.56 MHz RF power supply.

[0035] In a specific embodiment, the voltage control block 245 can be coupled to the sensor processing block 242. In a specific embodiment, the sensor processing block 242 can be communicatively coupled to a plurality of sensors. For example, a pair of first sensors 2611 and 2622 can be located on the upstream side of the impedance matching network 230. The first sensors 2611 and 2612 can be sensors for inputting the first power source 2321 and the second power source 2322 into the impedance matching network 230. In a specific embodiment, the second sensor 262 can be located on the downstream side of the impedance matching network 230. The first sensor 261 and the second sensor 262 can be current and voltage sensors, such as those described in more detail above.

[0036] In one embodiment, the tuning circuit 243 and the current ratio control block 244 can be communicatively coupled to the sensor processing block 242. The tuning circuit 243 and the current ratio control block 244 can be communicatively coupled to the actuator controller 235 in the impedance matching network 230. The actuator controller 235 can be actuated to change the capacitance of the variable capacitor within the impedance matching network 230 to control the impedance through the impedance matching network 230. In certain embodiments, the capacitor is a mechanical capacitor. In other embodiments, the capacitor is a solid-state variable impedance device.

[0037] exist Figure 2A In the case of Figure 2B In the embodiment, the power delivery architecture is coupled to the bottom base. However, in other embodiments, it should be understood that the power delivery architecture can be coupled to the top electrode and the bottom base. In such embodiments, a pair of power delivery architectures can be used, one for the top electrode and one for the bottom base.

[0038] Reference now Figure 2C , according to additional embodiments, a schematic diagram of a semiconductor processing tool 200 is shown. In one embodiment, the semiconductor processing tool 200 includes a chamber 220. The chamber is sealed by a top electrode 222. In one embodiment, a susceptor 223 can be disposed at the bottom of the chamber 220. The susceptor 223 is configured to hold a substrate 224.

[0039] In one embodiment, the processing module 234 can be coupled to the chamber 220. In one embodiment, the processing module 234 can be a processing power control module, although other power sources (e.g., microwave, DC, etc.) can be used. In one embodiment, the processing module 234 can be coupled to two or more power sources. For example, the AEC control 246 can have a block 247 coupled to the RF generator 232 (e.g., a 40 MHz generator) and a block 248 coupled to the non-sinusoidal power delivery system 238.

[0040] In a specific embodiment, the non-sinusoidal power sensor processing block 249 can be coupled to sensors on the non-sinusoidal power matching piece 237. For example, the sensors can include a first sensor 263 and a second sensor 264. The first sensor 263 can provide readings of edge voltage and edge current. The second sensor 263 can provide readings of wafer voltage and wafer current.

[0041] In a specific embodiment, the RF sensor processing block 242 can also be coupled to a pair of sensors. For example, the first sensor 261 can be on the upstream side of the RF impedance matching device 230, and the second sensor 262 can be on the downstream side of the RF impedance matching device 230. The downstream side of the RF matching can be coupled to the base 223. In a specific embodiment, the first sensor 261 and the second sensor 262 can be current and voltage sensors.

[0042] In a specific embodiment, the processing power control module 234 may also include a tuning circuit 243. The tuning circuit 243 may be coupled to the motor control 235 in the RF match 230. The tuning circuit 243 may be used to adjust the impedance in the RF match 230. For example, the motor control 235 may adjust the positioning of one or more variable capacitors to change the impedance of the system.

[0043] Reference now Figures 3A-3D , a series of schematic diagrams of a processing tool 300 are shown, according to various embodiments. In the illustrated embodiment, various inputs and outputs are provided to / from an impedance matching network 330. Additionally, the circuit architecture within the impedance matching network 330 is shown.

[0044] Reference now Figure 3A , a semiconductor processing tool 300 is shown according to one specific embodiment. In one specific embodiment, the semiconductor processing tool 300 includes a power supply 332. Figure 3A The power supply 332 shown in is a radio frequency generator. However, it should be understood that other power supplies can be used according to additional specific embodiments. In a specific embodiment, the power supply 332 can be coupled to the first sensor 351. The first sensor 351 can be on the upstream side of the impedance matching network 330. In a specific embodiment, the first sensor 351 is a voltage and current sensor. In a specific embodiment, the first sensor 351 can be followed by the impedance matching network 330.

[0045] The impedance matching network 330 may include a first capacitor C1 and a second capacitor C2. The first capacitor C1 and the second capacitor C2 may be variable capacitors. The first capacitor C1 may be between the input of the impedance matching network 330 and ground. The second capacitor C2 may be between the input of the impedance matching network 330 and the output of the impedance matching network 330.

[0046] In one embodiment, the output of the impedance matching network 330 can be coupled to a second sensor 352. The second sensor 352 can be a voltage and current sensor. In one embodiment, the first sensor 351 and the second sensor 352 can be coupled to a processing module (not shown) similar to the processing power control module described in more detail above. In one embodiment, the second sensor 352 can be between the impedance matching network 330 and the plasma source 320. For example, the plasma source 320 can be a plasma processing chamber, such as a PECVD chamber, a PEALD chamber, a PVD chamber, or a plasma processing chamber.

[0047] Reference now Figure 3B , a schematic diagram of a semiconductor processing tool 300 is shown according to one embodiment. In one embodiment, the semiconductor processing tool 300 includes a power supply 332. Figure 3B The power supply 332 shown in is a radio frequency generator. However, it should be understood that other power supplies can be used according to additional specific embodiments. In a specific embodiment, the power supply 332 can be coupled to the first sensor 351. The first sensor 351 can be on the upstream side of the impedance matching network 330. In a specific embodiment, the first sensor 351 is a voltage and current sensor. In a specific embodiment, the first sensor 351 can be followed by the impedance matching network 330.

[0048] The impedance matching network 330 may include a first capacitor C1, a second capacitor C2, and a third capacitor C3. The first capacitor C1, the second capacitor C2, and the third capacitor C3 may be variable capacitors. The first capacitor C1 may be between the input of the impedance matching network 330 and ground. The second capacitor C2 may be between the input of the impedance matching network 330 and the first output of the impedance matching network 330. The third capacitor C3 may be between the second capacitor C2 and the second output of the impedance matching network 330. For example, the first output may be used inside the plasma source, and the second output may be used outside the plasma source. Controlling the capacitance of the third capacitor C3 determines the power distribution between the inside of the plasma source and the outside of the plasma source.

[0049] In a specific embodiment, second sensors 3521 and 3522 may be provided between the impedance matching network 330 and the plasma source 320. In a specific embodiment, the second sensors 3521 and 3522 may be current and voltage sensors. In a specific embodiment, the first sensor 351 and the second sensor 352 may be coupled to a processing module (not shown) similar to the processing power control module described in more detail above. In a specific embodiment, the second sensor 352 may be between the impedance matching network 330 and the plasma source 320. For example, the plasma source 320 may be a plasma processing chamber, such as a PECVD chamber, a PEALD chamber, a PVD chamber, or a plasma processing chamber.

[0050] Reference now Figure 3C , a schematic diagram of a semiconductor processing tool 300 is shown according to one embodiment. In one embodiment, the semiconductor processing tool 300 includes a pair of power supplies 332 A and 332 B . Figure 3C The power supply 332 shown in A With 332 B is a radio frequency generator. However, it should be understood that other power sources may be used according to additional specific embodiments. In one specific embodiment, the power source 332 may be coupled to the first sensor 351. A or 351 B The first sensor 351 may be at the upstream side of the impedance matching network 330. In a specific embodiment, the first sensor 351 is a voltage and current sensor. In a specific embodiment, the first sensor 351 may be followed by the impedance matching network 330.

[0051] As shown, a pair of inputs are provided to the impedance matching network 330. The first input may be provided by a first power source 332 A Provided, the second input can be provided by the second power supply 332 B Each input of the impedance matching network 330 may include a first capacitor C1 and a second capacitor C2. The first capacitor C1 and the second capacitor C2 may be variable capacitors. The first capacitor C1 may be between the input of the impedance matching network 330 and ground. The second capacitor C2 may be between the input of the impedance matching network 330 and the output of the impedance matching network 330. In a specific embodiment, the two input sources may be merged together after the second capacitor C2 to provide a single output.

[0052] In one embodiment, the output of the impedance matching network 330 can be coupled to a second sensor 352. The second sensor 352 can be a voltage and current sensor. In one embodiment, the first sensor 351 and the second sensor 352 can be coupled to a processing module (not shown) similar to the processing power control module described in more detail above. In one embodiment, the second sensor 352 can be between the impedance matching network 330 and the plasma source 320. For example, the plasma source 320 can be a plasma processing chamber, such as a PECVD chamber, a PEALD chamber, a PVD chamber, or a plasma processing chamber.

[0053] Reference now Figure 3D , a schematic diagram of a semiconductor processing tool 300 is shown according to one embodiment. In one embodiment, the semiconductor processing tool 300 includes a set of three power supplies 332 A ,332 B With 332 C . Figure 3D The power supply 332 shown in A ,332 B With 332 C is a radio frequency generator. However, it should be understood that other power sources may be used according to additional specific embodiments. In one specific embodiment, the power source 332 may be coupled to the first sensor 351. A ,351 B or 351 C The first sensor 351 may be at the upstream side of the impedance matching network 330. In a specific embodiment, the first sensor 351 is a voltage and current sensor. In a specific embodiment, the first sensor 351 may be followed by the impedance matching network 330.

[0054] As shown, a set of three inputs is provided to the impedance matching network 330. The first input may be provided by a first power source 332 A Provided, the second input can be provided by the second power supply 332 B Provided, the third input can be provided by the third power supply 332 C Each input of the impedance matching network 330 may include a first capacitor C1 and a second capacitor C2. The first capacitor C1 and the second capacitor C2 may be variable capacitors. The first capacitor C1 may be between the input of the impedance matching network 330 and ground. The second capacitor C2 may be between the input of the impedance matching network 330 and the output of the impedance matching network 330. In a specific embodiment, the three input sources may be combined after the second capacitor C2 to provide a single output.

[0055] In one embodiment, the output of the impedance matching network 330 can be coupled to a second sensor 352. The second sensor 352 can be a voltage and current sensor. In one embodiment, the first sensor 351 and the second sensor 352 can be coupled to a processing module (not shown) similar to the processing power control module described in more detail above. In one embodiment, the second sensor 352 can be between the impedance matching network 330 and the plasma source 320. For example, the plasma source 320 can be a plasma processing chamber, such as a PECVD chamber, a PEALD chamber, a PVD chamber, or a plasma processing chamber.

[0056] Reference now Figure 4 , a block diagram of a processing module 434 is shown according to a specific embodiment. In a specific embodiment, the processing module 434 may include a platform board 470, such as a radio frequency platform board. In a specific embodiment, the platform board 470 may be a printed circuit board (PCB), etc. In a specific embodiment, the platform board provides a board-to-board connector to support connections to different combinations of heterogeneous computing modules (HCMs) 471 and dual ADCs 475. The HCM 471 may be a module built with a high-performance, highly integrated CPU and programmable logic. The platform board 470 may support two Ethernet network interfaces, such as an ECAT module and a USB (storage memory device). The platform board 470 may include an actuator controller 485 and a driver, as described above Figures 3A-3D In one embodiment, the platform board 470 can divide the voltage rails and power the functions on the platform board 470, the carrier card 474, and the HCM 471.

[0057] In one specific embodiment, the platform board 470 may have two carrier cards 474 to support variations of the ADC 475 combination. For a single sensor 451, only one carrier card 474 slot will be populated by the ADC component 475 and support RF coupling of passive components to the ADC 475 inputs. For a dual sensor 451 configuration, both carrier card slots will be used with the coupling circuitry and dual ADCs 475. To expand to four sensor 451 inputs, the two separate carrier card slots 474 are combined to form a solution to support two four-channel ADCs 475 or one eight-input ADC 475.

[0058] In one specific embodiment, HCM 471 includes a programmable logic board 472 and a real-time processing unit (RTPU) board 473. Logic board 472 and RTPU 473 may be coupled to a memory device (eg, DRAM, etc.). A messaging controller and a host may also be provided on HCM 471.

[0059] In one embodiment, the RTPU 473 includes an impedance matching / frequency control block 476. The impedance matching / frequency control block 476 is a processing component for calculating position commands for variable capacitors and solid-state tuning elements based on transmission line measurements. In some embodiments, there may be up to three impedance matching / frequency control blocks 476.

[0060] In one embodiment, the RTPU 473 may also include a current ratio control block 484. The current ratio control block 484 is a processing component that calculates commands for the variable element to direct the RF power between the outputs. In some embodiments, the RF current is the target. However, in other embodiments, voltage and / or phase values ​​may also be controlled. In other embodiments, the current ratio control block 484 may optionally be omitted.

[0061] In one specific embodiment, the RTPU 473 may further include a safe operating area (SOA) supervisory control block 483. The SOA supervisory control block is a processing component that generates power and couples RF power to dynamic loads. This subsystem may have an SOA associated with maximum dissipation, creepage distance, and electrical clearance. In addition to generating warnings for operation under high dissipation loads, this processing module can also actively change the RF power.

[0062] In a specific embodiment, the RTPU 473 may further include an RF source control block 477. The RF source control block 477 may include components to control the RF power set point based on the measured RF quantified from the input and output sensors. The RF set point is derived in CW and pulsed modes. Line loss compensation is included in the commanded set point of the RF power supply.

[0063] In one embodiment, the RTPU 473 may further include an impedance matching / frequency agent block 482. In the case of a cluster tool, multiple RF power delivery systems may be used. This agent provides a local computation engine to interface with the global manager to improve the repeatability and reproducibility of the cluster tool. Such embodiments may be formulated using an evolving grid shared with a supervisory global agent.

[0064] In a specific embodiment, the RTPU 473 may further include a pulse monitoring agent 478. The pulse monitoring agent 478 may collect statistical summaries from the compilation of measured and calculated pulse results. In a specific embodiment, the RTPU 473 may further include an RF agent 481. The RF agent 481 provides a set of configurable parameters for triggering a set of high-resolution continuous samples. The trigger configuration is designed based on different measurement parameters with different sample numbers or acquisition times. In a specific embodiment, the RTPU 473 may further include an impedance matching calibration agent 479. The impedance matching calibration agent 479 manages the calibration of the impedance matching network. In a specific embodiment, the RTPU 473 may further include a sensor calibration agent 480. The sensor calibration agent 480 can manage the calibration of the RF sensor and the sampling time for precise frequency measurement.

[0065] Reference now Figure 5 , a block diagram of an exemplary computer system 500 of a processing tool is shown according to a specific embodiment. In a specific embodiment, the computer system 500 is coupled to the processing tool and controls the processing in the processing tool. The computer system 500 can be connected (e.g., network connection) to other machines in a local area network (LAN), an internal network, an external network, or the Internet. The computer system 500 can operate in the space of a server or a client machine in a client-to-server network environment, or can be used as a peer machine in a peer (or distributed) network environment. The computer system 500 can be a personal computer (PC), a tablet computer, a set-top box (STB), a personal digital assistant (PDA), a cellular phone, a web page component, a server, a network router, a switch or a bridge, or any machine that can execute a set of instructions specifying the action that this machine is to take (sequentially or otherwise). In addition, although only a single machine is shown for the computer system 500, the word "machine" should also be considered to include a set of any machines (e.g., computers) that execute a set (or multiple sets) of instructions to execute any one or more methods described herein, either individually or jointly.

[0066] The computer system 500 may include a computer program product or software 522 having a non-transitory machine-readable medium having stored thereon instructions that may be used to program the computer system 500 (or other electronic device) to perform a process according to a specific embodiment. A machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, a machine-readable (e.g., computer-readable) medium includes a machine-readable (e.g., computer) storage medium (e.g., read-only memory ("ROM"), random access memory ("RAM"), magnetic disk storage medium, optical storage medium, flash memory device, etc.), a machine-readable (e.g., computer) transmission medium (electrical, optical, acoustic or other form of propagated signals (e.g., infrared signals, digital signals, etc.)), etc.

[0067] In a specific embodiment, the computer system 500 includes a system processor 502, a main memory 504 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM), such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM)), etc.), a static memory 506 (e.g., flash memory, static random access memory (SRAM), etc.), and an auxiliary memory 518 (e.g., a data storage device) that communicate with each other via a bus 530.

[0068] The system processor 502 represents one or more general-purpose processing devices, such as a microsystem processor, a central processing unit, etc. More specifically, the system processor may be a complex instruction set computing (CISC) microsystem processor, a reduced instruction set computing (RISC) microsystem processor, a very long instruction word (VLIW) microsystem processor, a system processor implementing other instruction sets, or a system processor implementing a combination of instruction sets. The system processor 502 may also be one or more special-purpose processing devices, such as an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal system processor (DSP), a network system processor, etc. The system processor 502 is configured to execute processing logic 526 to perform the operations described herein.

[0069] The computer system 500 may also include a system network interface device 508 for communicating with other devices or machines. The computer system 500 may also include a video display unit 510 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 512 (e.g., a keyboard), a cursor control device 514 (e.g., a mouse), and a signal generating device 516 (e.g., a speaker).

[0070] The secondary memory 518 may include a machine-accessible storage medium 531 (or more specifically, a computer-readable storage medium) having stored thereon one or more sets of instructions (e.g., software 522) embodying any one or more of the methodologies or functions described herein. The software 522 may also reside, in whole or in part, within the main memory 504 and / or within the system processor 502 during execution by the computer system 500, the main memory 504 and the system processor 502 also constituting machine-readable storage media. The software 522 may also be transmitted or received over the network 520 via the system network interface device 508. In a specific embodiment, the network interface device 508 may operate using radio frequency coupling, optical coupling, acoustic coupling, or inductive coupling.

[0071] Although the machine-readable medium 531 is shown as a single medium in the exemplary embodiment, the term "machine-readable storage medium" should be construed to include a single medium or multiple media (such as a centralized or distributed database, and / or associated caches and servers) storing one or more sets of instructions. The terms "machine-readable medium" and "machine-readable storage medium" should also be construed to include any medium capable of storing or encoding a set of instructions to be executed by a machine and causing the machine to perform any one or more of the methods. Thus, the term "machine-readable storage medium" should be construed to include, but not be limited to, solid-state memories, and optical and magnetic media.

[0072] In the foregoing specification, certain exemplary embodiments have been described. It will be apparent that various modifications may be made thereto without departing from the scope of the following claims. The specification and drawings are accordingly to be regarded in an illustrative rather than a restrictive sense.

Claims

1. A processing tool comprising: power supply; an impedance matching network coupled to the power source; a cathode, wherein the power supply is configured to supply power to the cathode through the impedance matching network; as well as A processing module, wherein the processing module is communicatively coupled to the power source and the impedance matching network.

2. The processing tool of claim 1, wherein a first sensor is disposed upstream of the impedance matching network and a second sensor is disposed downstream of the impedance matching network.

3. The processing tool of claim 2, wherein the first sensor and the second sensor are communicatively coupled to the processing module.

4. The processing tool of claim 2, wherein the first sensor and the second sensor are voltage / current sensors.

5. The processing tool of claim 1, further comprising: A plurality of power sources, wherein the plurality of power sources are coupled to the impedance matching network.

6. The processing tool of claim 5, further comprising: a plurality of first sensors, wherein each of the plurality of first sensors is located between each of the plurality of power sources and the impedance matching network; and The second sensor is located between the impedance matching network and the cathode.

7. The processing tool of claim 1, wherein the cathode is in a plasma chamber.

8. The processing tool of claim 1, wherein the power source is a radio frequency power source.

9. The processing tool of claim 1, wherein the power source is a microwave power source.

10. The processing tool of claim 1, wherein the power source is a direct current power source.

11. The processing tool of claim 1, wherein the impedance matching network changes the impedance of the electrical path between the power source and the cathode to match an impedance of a load coupled to the cathode.

12. The processing tool of claim 1, wherein the cathode is a top electrode in a plasma chamber.

13. The processing tool of claim 1, wherein the cathode is a bottom electrode in a plasma chamber.

14. A processing power control module, comprising: RF platform board; A carrier card, the carrier card being used for an analog-to-digital converter (ADC); Heterogeneous Compute Module (HCM); Programmable logic board; Real-time Processing Unit (RTPU); and Messaging controller.

15. The process power control module of claim 14, wherein the RTPU comprises an impedance matching / frequency control module.

16. The process power control module of claim 14, wherein the RTPU comprises a current ratio control module.

17. The process power control module of claim 14, wherein the RTPU comprises a radio frequency source control module.

18. The process power control module of claim 14, wherein the RTPU comprises one or more of an impedance matching / frequency agent, a pulse monitoring agent, an impedance matching calibration agent, and a sensor calibration agent.

19. A semiconductor processing tool comprising: power supply; an impedance matching network coupled to the power source; a cathode, wherein the power supply is configured to supply power to the cathode through the impedance matching network; and a processing module, wherein the processing module is communicatively coupled to the power source and the impedance matching network, and wherein the processing module comprises; RF platform board; A carrier card, the carrier card being used for an analog-to-digital converter (ADC); Heterogeneous Compute Module (HCM); Programmable logic board; Real-time Processing Unit (RTPU); and Messaging controller.

20. The processing tool of claim 19, wherein a first sensor is disposed upstream of the impedance matching network and a second sensor is disposed downstream of the impedance matching network.

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