Double-sided cooling type power semiconductor package

Abstract

The present invention relates to a double-sided cooling type power semiconductor package comprising: a plate-shaped power semiconductor package; a plurality of coolers each having a flow path for a cooling fluid provided therein, the coolers being disposed on both side plate surfaces of the power semiconductor package so as to be capable of heat exchange; and a connection member having a flow path for the cooling fluid provided therein, the connection member being communicably connected to the plurality of coolers. The connecting member is configured to be telescopic. As a result, deformation and damage during thermal expansion of the power semiconductor package can be suppressed.

Description

Technical Field

[0001] The invention relates to a double-sided cooling type power semiconductor package. Background Art

[0002] As we all know, semiconductor components are electronic circuit components made of semiconductors.

[0003] Among such semiconductor elements, a power module, a power module, or a power semiconductor package (hereinafter referred to as a “power semiconductor package”) implemented as a package including an IGBT and a diode is used for power control of a power device.

[0004] Typically, the power semiconductor package is widely used in industrial applications such as inverters, uninterruptible power supply devices, welding machines, elevators, and the like, and in the automotive field.

[0005] However, such existing power semiconductor packages have the following problems: a large amount of heat loss is generated during the power conversion process, and such heat loss not only causes the temperature of the power semiconductor package to rise, but also, when the temperature of the power semiconductor package rises and exceeds the operating temperature limit of the power semiconductor package, the function of the power semiconductor package may be damaged.

[0006] In view of such problems, a cooling device for a power semiconductor package is disclosed, in which a cooling channel is formed to contact both surfaces of a power semiconductor package so as to cool the power semiconductor package.

[0007] However, in such a conventional cooling device for a power semiconductor package, the cooling channel is formed long so as to sequentially pass through the top and bottom surfaces of the power semiconductor package, thus causing a problem of increasing the flow resistance of the cooling fluid (cooling water).

[0008] In addition, due to the increasing temperature deviation between the cooling fluid in the cooling channel on the top surface of the power semiconductor package and the cooling fluid in the cooling channel on the bottom surface of the power semiconductor package, insufficient cooling of relatively high temperature areas occurs, thus causing the problem of accelerated forced degradation.

[0009] In addition, the power semiconductor package contacting the downstream area of ​​the cooling channel where the cooling fluid has a relatively high temperature has a relatively insufficient cooling problem compared to the power semiconductor package contacting the upstream area of ​​the cooling channel where the cooling fluid has a relatively low temperature.

[0010] In addition, since the surface of the power semiconductor package is in direct contact with the surface of the cooling channel, there is a problem that heat exchange between the power semiconductor package and the cooling fluid inside the cooling channel is insufficient.

[0011] In view of such problems, a double-sided cooling device for a power semiconductor package has been developed that has a local direct cooling flow path, and the direct cooling flow path allows the top and bottom surfaces of the power semiconductor package to directly contact the cooling fluid.

[0012] However, in such an existing double-sided cooling device of a power semiconductor package with a direct cooling flow path, since the top and bottom surfaces of the power semiconductor package are in direct contact with the cooling fluid, there is a limit to the increase in the heat dissipation area of ​​the power semiconductor package, resulting in insufficient heat exchange.

[0013] On the other hand, in such an existing cooling device for a power semiconductor package, since the power semiconductor package will repeatedly expand and contract thermally when the power semiconductor package is operated and stopped, stress is concentrated in the bonding area of ​​the power semiconductor package and / or the cooling channel, so there is a problem that the power semiconductor package and the cooling channel may be damaged.

[0014] Prior art literature

[0015] Patent Literature

[0016] Patent Document 1: KR1020170056196 (published on May 23, 2017)

[0017] Patent document 2: KR1020170042067 (published on April 18, 2017) Summary of the invention

[0018] Problem that the invention aims to solve

[0019] Therefore, an object of the present invention is to provide a double-sided cooling type power semiconductor package capable of suppressing deformation and damage when the power semiconductor package thermally expands.

[0020] Furthermore, another object of the present invention is to provide a double-sided cooling type power semiconductor package capable of shortening a flow path of a cooling fluid.

[0021] Still another object of the present invention is to provide a double-sided cooling type power semiconductor package capable of suppressing temperature deviation between the top surface and the bottom surface of the power semiconductor package.

[0022] Technical solutions to the problem

[0023] In order to solve the above-mentioned problems, the double-sided cooling type power semiconductor package of the present invention is characterized in that a retractable connection member is connected to coolers arranged on both sides of the power semiconductor package.

[0024] Specifically, a plurality of coolers are respectively arranged on two plate surfaces along the thickness direction of the power semiconductor package, and a retractable connecting component is respectively connected to one side of the plurality of coolers. Therefore, when the power semiconductor package is thermally deformed (contracted and expanded), the connecting component absorbs the deformation (contracted and expanded), thereby preventing damage to the power semiconductor package and surrounding components.

[0025] A double-sided cooling power semiconductor package according to an embodiment of the present invention comprises: a plate-shaped power semiconductor package; a plurality of coolers, each of which has a flow path for a cooling fluid disposed therein, and the plate surfaces on both sides of the power semiconductor package are respectively configured to enable heat exchange; and a connecting member, each of which has a flow path for the cooling fluid disposed therein and is communicatively connected to the plurality of coolers; the connecting member is formed to be retractable.

[0026] Thus, when the power semiconductor package is thermally deformed (expanded and contracted), the connection member absorbs the deformation (expanded and contracted) by expanding and contracting, thereby suppressing deformation of the power semiconductor package and / or deformation of the cooler.

[0027] In an embodiment of the present invention, the connecting member has a bellows shape.

[0028] Specifically, the connection member includes a coupling portion having a tubular shape and provided at both ends, and an accordion portion having an outer diameter expanded compared to the coupling portion and being expandable and contractible.

[0029] Thereby, the connecting member can be smoothly extended and retracted.

[0030] In an embodiment of the present invention, the connecting member is configured to be able to expand and contract along a thickness direction of the power semiconductor package.

[0031] One end of the connecting member is connected to one of the plurality of coolers, and the other end is connected to another of the plurality of coolers, so that when the power semiconductor package expands in the thickness direction, the connecting member can absorb the deformation by stretching in the thickness direction.

[0032] In addition, in a case where the power semiconductor package shrinks in the thickness direction, the connection member can absorb deformation by shrinking in the thickness direction.

[0033] In an embodiment of the present invention, the connecting member is formed to be able to expand and contract along a board surface direction of the power semiconductor package.

[0034] Thus, when the power semiconductor package expands in the board surface direction, the connection member can absorb the deformation by contracting in the board surface direction.

[0035] In addition, when the power semiconductor package shrinks in the board surface direction, the connection member can absorb the deformation by extending in the board surface direction.

[0036] In one embodiment of the present invention, each of the plurality of coolers is constructed to include: an inner plate in contact with the power semiconductor; an outer plate separated from the inner plate; and a partition plate connected to the inner plate on one side and to the outer plate on the other side.

[0037] This increases the contact area between the plurality of coolers and the cooling fluid, thereby increasing the amount of heat exchange.

[0038] This can promote heat dissipation (cooling) of the power semiconductor package.

[0039] In addition, since a plurality of coolers can be manufactured by extrusion molding, a plurality of coolers can be manufactured easily.

[0040] In one embodiment of the present invention, each of the plurality of coolers is constructed to include: an inner plate in contact with the power semiconductor package; an outer plate separated from the inner plate; and a heat sink connected to the inner plate on one side and to the outer plate on the other side.

[0041] Thereby, the heat exchange area between the plurality of coolers and the cooling fluid can be increased.

[0042] In addition, the amount of heat exchange between the cooling fluid and the plurality of coolers can be adjusted by adjusting the size, number and interval of the heat sinks.

[0043] This can promote cooling of the power semiconductor package.

[0044] In one embodiment of the present invention, the plurality of coolers include: an upper cooler, arranged on the upper panel surface of the power semiconductor package; and a lower cooler, arranged on the lower panel surface of the power semiconductor package; the connecting members are respectively arranged at the inlet side ends of the lower cooler and the upper cooler, and the outlet side ends of the lower cooler and the upper cooler based on the flow direction of the cooling fluid.

[0045] Therefore, when the power semiconductor package thermally expands, the deformation can be absorbed by the connecting members provided at the inlet side ends of the lower cooler and the upper cooler and the outlet side ends of the lower cooler and the upper cooler, respectively.

[0046] Thus, it is possible to suppress damage to the power semiconductor package, the upper cooler, and the lower cooler due to thermal expansion of the power semiconductor package.

[0047] In one embodiment of the present invention, the cooler further comprises a header disposed at an inlet side end and an outlet side end of the lower cooler, and an inlet side end and an outlet side end of the upper cooler, respectively.

[0048] The connecting member is vertically disposed between the head portion of the upper cooler and the head portion of the lower cooler to be communicatively connected to the head portions.

[0049] Thus, when the power semiconductor package thermally expands, the connection member absorbs the deformation, thereby suppressing damage to the power semiconductor package, the lower cooler, and the upper cooler.

[0050] In one embodiment of the present invention, a connection member combining portion is provided on the head portion, and the connection member is used to combine the connection member in an overlapping manner along the thickness direction of the power semiconductor package.

[0051] Thereby, the length of the connection member can be sufficiently ensured, and the connection member can be easily deformed (expanded and retracted).

[0052] In one embodiment of the present invention, the connecting member coupling portion has a recessed portion recessed along a thickness direction so as to accommodate an end portion of the connecting member.

[0053] Thus, when the connecting member contracts, it is possible to suppress the connecting member from being excessively compressed.

[0054] In one embodiment of the present invention, the inner width of the recessed portion is greater than the maximum outer width of the connecting member (the outer width of the folded portion).

[0055] Thus, when the connection member contracts, the outermost area (the accordion portion) is accommodated inside the recessed portion in the width direction of the connection member without interfering with the recessed portion.

[0056] In one embodiment of the present invention, the connecting member coupling portion has an overlapping section, and the overlapping section protrudes from the recessed portion to overlap with the end portion (the coupling portion) of the connecting member along the length direction.

[0057] Thus, when the connecting member contracts, it is possible to suppress the wrinkled portion of the connecting member from coming into contact with the bottom of the recessed portion along the longitudinal direction of the connecting member.

[0058] In one embodiment of the present invention, the overlapping section is configured to have a length smaller than a depth of the recessed portion.

[0059] Thus, when the connecting member contracts, the corrugated portion of the connecting member can be inserted into the interior of the recessed portion.

[0060] In one embodiment of the present invention, the inner plate, the outer plate and the heat sink are formed of metal components, and the inner plate, the outer plate and the heat sink are connected by brazing.

[0061] This can suppress leakage of the cooler.

[0062] In one embodiment of the present invention, the power semiconductor package includes a first power semiconductor package, a second power semiconductor package and a third power semiconductor package separated along a board surface direction.

[0063] The upper cooler includes a first upper cooler disposed on an upper side of the first power semiconductor package, a second upper cooler disposed on an upper side of the second power semiconductor package, and a third upper cooler disposed on an upper side of the third power semiconductor package.

[0064] The lower cooler includes a first lower cooler disposed at a lower side of the first power semiconductor package, a second lower cooler disposed at a lower side of the second power semiconductor package, and a third lower cooler disposed at a lower side of the third power semiconductor package.

[0065] Here, the first upper cooler, the second upper cooler, and the third upper cooler are connected in series, and the first lower cooler, the second lower cooler, and the third lower cooler are connected in series.

[0066] The first upper cooler and the first lower cooler are communicably connected by the connection member, and the third upper cooler and the third lower cooler are communicably connected by the connection member.

[0067] Thus, the top surfaces and bottom surfaces of the first power semiconductor package, the second power semiconductor package, and the third power semiconductor package can be uniformly cooled, thereby suppressing temperature deviation between the top surfaces and the bottom surfaces.

[0068] In one embodiment of the present invention, the connecting member comprises: an upper horizontal connecting member connecting the first upper cooler, the second upper cooler and the third upper cooler in a horizontal direction; and a lower horizontal connecting member connecting the first lower cooler, the second lower cooler and the third lower cooler in a horizontal direction.

[0069] Specifically, the first upper cooler and the second upper cooler are communicably connected by the upper horizontal connecting member, and the second upper cooler and the third upper cooler are communicably connected by the upper horizontal connecting member.

[0070] In addition, the first lower cooler and the second lower cooler are communicably connected by the lower horizontal connection member, and the second lower cooler and the third lower cooler are communicably connected by the lower horizontal connection member.

[0071] Therefore, when the first power semiconductor package, the second power semiconductor package and the third power semiconductor package are thermally deformed (contracted and expanded), the upper horizontal connecting member and the lower horizontal connecting member absorb the deformation by stretching and contracting, thereby preventing the first power semiconductor package, the second power semiconductor package, the third power semiconductor package, the first upper cooler, the second upper cooler, the third upper cooler, the first lower cooler, the second lower cooler and the third lower cooler from being damaged due to thermal deformation (stress).

[0072] In one embodiment of the present invention, the power semiconductor package includes a first power semiconductor package, a second power semiconductor package, and a third power semiconductor package that are spaced apart in a thickness direction.

[0073] The cooler includes a first cooler disposed on a lower side of the first power semiconductor package, a second cooler disposed on an upper side of the first power semiconductor package, a third cooler disposed on an upper side of the second power semiconductor package, and a fourth cooler disposed on an upper side of the third power semiconductor package.

[0074] The inlet side ends of the first cooler, the second cooler, the third cooler, and the fourth cooler are connected to each other by the connection member so as to be communicable.

[0075] Outflow-side ends of the first cooler, the second cooler, the third cooler, and the fourth cooler are connected to each other by the connection member so as to be communicable.

[0076] Thus, it is possible to suppress temperature deviation between the top surfaces and bottom surfaces of the first power semiconductor package, the second power semiconductor package, and the third power semiconductor package.

[0077] In addition, when the first power semiconductor package, the second power semiconductor package and the third power semiconductor package are thermally deformed, damage to the first power semiconductor package, the second power semiconductor package, the third power semiconductor package, the first cooler, the second cooler, the third cooler and the fourth cooler can be suppressed.

[0078] In one embodiment of the present invention, based on the moving direction of the cooling fluid, a first head is respectively provided at the inlet side end and the outlet side end of the first cooler, a second head is respectively provided at the inlet side end and the outlet side end of the second cooler, a third head is respectively provided at the inlet side end and the outlet side end of the third cooler, and a fourth head is respectively provided at the inlet side end and the outlet side end of the fourth cooler.

[0079] The connection member includes a first vertical connection member, a second vertical connection member, and a third vertical connection member disposed in a vertical direction between the first head, the second head, the third head, and the fourth head which are spaced apart from each other in an up-and-down direction.

[0080] Therefore, when the first power semiconductor package, the second power semiconductor package and the third power semiconductor package are thermally deformed, the first vertical connecting member, the second vertical connecting member and the third vertical connecting member can absorb the deformation of the first power semiconductor package, the second power semiconductor package and the third power semiconductor package by stretching or contracting respectively.

[0081] In one embodiment of the present invention, there is a heat conductive material inserted between the contact surface of the power semiconductor package and the cooler.

[0082] As a result, the amount of air between the contact surfaces of the power semiconductor package and the cooler is reduced, so that heat energy can be easily transferred from the power semiconductor package to the cooler.

[0083] This can promote heat dissipation (cooling) of the power semiconductor package.

[0084] In an embodiment of the present invention, the contact surface of the power semiconductor package and the cooler may be bonded by welding.

[0085] Thus, the amount of air between the contact surface between the power semiconductor package and the cooler can be reduced.

[0086] This can promote heat dissipation (cooling) of the power semiconductor package.

[0087] Effects of the Invention

[0088] As described above, according to one embodiment of the present invention, a plurality of coolers are provided on both sides of a power semiconductor package, and a connecting member is provided which is communicatively connected to the plurality of coolers, and the connecting member is configured to be retractable, so that when the power semiconductor package is thermally deformed, the connecting member can absorb the deformation to suppress damage to the power semiconductor package and the cooler.

[0089] In addition, the connection member has a bellows shape and thus can easily absorb deformation.

[0090] In addition, the connecting member is configured to be able to expand and contract along the thickness direction of the power semiconductor package. Therefore, when the power semiconductor package is thermally deformed along the thickness direction, the connecting member absorbs the deformation by expanding and contracting, thereby preventing damage to the power semiconductor package and the cooler.

[0091] In addition, the connecting member is formed to be able to expand and contract along the board surface direction of the power semiconductor package. Therefore, when the power semiconductor package expands along the board surface direction, the connecting member absorbs the deformation by shrinking, thereby preventing damage to the power semiconductor package and the cooler.

[0092] Furthermore, the plurality of coolers are configured to include an inner plate, an outer plate, and a plurality of partition plates, so that the contact area with the cooling fluid is increased, thereby promoting heat dissipation.

[0093] In addition, since the plurality of coolers include the inner plate, the outer plate, and the radiating fins, the heat exchange area with the cooling fluid can be increased.

[0094] In addition, the plurality of coolers include an upper cooler and a lower cooler, and connecting members are respectively arranged at the inlet side ends of the upper cooler and the lower cooler and the outlet side ends of the upper cooler and the lower cooler. Therefore, when the power semiconductor package undergoes thermal deformation, the deformation can be absorbed by utilizing the connecting members respectively arranged at the inlet side end and the outlet side end.

[0095] In addition, heads are respectively provided at the inlet side ends and the outlet side ends of the plurality of coolers, and each of the heads is provided with a vertical connecting member coupling portion so that the vertical connecting members can be coupled in an overlapping manner along the thickness direction of the power semiconductor package. Therefore, when the vertical connecting members are extended, sufficient length can be ensured, thereby enabling easy telescoping.

[0096] In addition, the vertical connection member coupling portion has a recessed portion recessed in the thickness direction, and therefore, when the vertical connection member contracts, it is possible to suppress the vertical connection member from being excessively compressed.

[0097] In addition, the inner width of the recessed portion is greater than the maximum outer width of the vertical connection member, so when the vertical connection member is extended or retracted, interference with the recessed portion can be suppressed.

[0098] Furthermore, since the inner plate, the outer plate, and the radiating fins are joined together by brazing, leakage of the cooler can be suppressed.

[0099] In addition, the power semiconductor package has a first power semiconductor package, a second power semiconductor package and a third power semiconductor package separated along the board surface direction, the upper cooler has a first upper cooler, a second upper cooler and a third upper cooler, and the lower cooler has a first lower cooler, a second lower cooler and a third lower cooler. Therefore, it is possible to suppress the temperature deviation of the top and bottom surfaces of the first power semiconductor package, the second power semiconductor package and the third power semiconductor package.

[0100] In addition, the first upper cooler, the second upper cooler and the third upper cooler are communicatively connected using an upper horizontal connecting member, and the first lower cooler, the second lower cooler and the third lower cooler are communicatively connected using a lower horizontal connecting member. Therefore, when the first power semiconductor package, the second power semiconductor package and the third power semiconductor package are thermally deformed, the upper horizontal connecting member and the lower horizontal connecting member can be used to absorb the deformation.

[0101] In addition, the power semiconductor package includes a first power semiconductor package, a second power semiconductor package and a third power semiconductor package which are separated in the thickness direction, and the cooler includes a first cooler arranged on the lower side of the first power semiconductor package, a second cooler arranged on the upper side of the second power semiconductor package, a third cooler arranged on the upper side of the second power semiconductor package, and a fourth cooler arranged on the upper side of the third power semiconductor package. Therefore, it is possible to suppress temperature deviations on the top and bottom surfaces of the first power semiconductor package, the second power semiconductor package and the third power semiconductor package.

[0102] In addition, a first head is arranged on the inlet side and the outflow side of the first cooler, a second head is arranged on the inlet side and the outflow side of the second cooler, a third head is arranged on the inlet side and the outflow side of the third cooler, and a fourth head is arranged on the inlet side and the outflow side of the fourth cooler. A first vertical connecting member, a second vertical connecting member and a third vertical connecting member are arranged between the first head, the second head, the third head and the fourth head. Therefore, when the first power semiconductor package, the second power semiconductor package and the third power semiconductor package are thermally deformed, the first vertical connecting member, the second vertical connecting member and the third vertical connecting member can absorb the deformation of the first power semiconductor package, the second power semiconductor package and the third power semiconductor package by elongation or contraction, respectively.

[0103] In addition, a heat conductive material is inserted between the contact surfaces of the power semiconductor package and the cooler, so the amount of air between the contact surfaces of the power semiconductor package and the cooler is reduced, so that heat energy can be easily transferred from the power semiconductor package to the cooler. BRIEF DESCRIPTION OF THE DRAWINGS

[0104] Figure 1 FIG. 4 is a perspective view of a double-sided cooling power semiconductor package according to an embodiment of the present invention.

[0105] Figure 2 yes Figure 1 A cross-sectional view of a connection member of a double-sided cooling type power semiconductor package before shrinkage.

[0106] Figure 3 yes Figure 1 Cross-sectional view of a double-sided cooling type power semiconductor package.

[0107] Figure 4 It is used to illustrate Figure 3 Figure 2 shows the effect of a double-sided cooling type power semiconductor package.

[0108] Figure 5 yes Figure 1 A cross-sectional view of a modified example of a double-sided cooling power semiconductor package.

[0109] Figure 6 yes Figure 5 A cross-sectional view of the cooler in FIG.

[0110] Figure 7 yes Figure 5 A cross-sectional view of the compressed state of the connecting member.

[0111] Figure 8 It is used to illustrate Figure 7 Figure 2 shows the effect of a double-sided cooling type power semiconductor package.

[0112] Fig. 9 FIG. 4 is a perspective view of a double-sided cooling power semiconductor package according to another embodiment of the present invention.

[0113] Fig.10 yes Fig. 9 A three-dimensional view of the upper cooler and the lower cooler.

[0114] Fig.11 yes Fig.10 Separated stereogram of the upper cooler and the lower cooler in FIG.

[0115] Fig.12 yes Fig. 9 A cross-sectional view of a vertical connection member of a double-sided cooling power semiconductor package before shrinkage.

[0116] Fig.13 yes Fig.11 A front view of the main body of the cooler (lower cooler) in FIG.

[0117] Fig.14 yes Fig.11 A three-dimensional view of the horizontal connecting member (upper horizontal connecting member) in FIG.

[0118] Fig.15 yes Fig.12 An enlarged view of the horizontal connecting member (upper horizontal connecting member) area in FIG.

[0119] Fig.16 yes Fig.11 A three-dimensional diagram of the vertical connecting member in FIG.

[0120] Fig.17 yes Fig.12 A magnified view of the vertical connecting member area in .

[0121] Fig.18 yes Fig.11 Stereoscopic view of the outflow side of the head.

[0122] Fig.19 yes Fig.12 A cross-sectional view of a vertical connection member of a double-sided cooling power semiconductor package after shrinkage.

[0123] Fig. 20 It is used to illustrate Fig.17 Figure 2 shows the effect of a double-sided cooling type power semiconductor package.

[0124] Fig.21 FIG. 4 is a perspective view of a double-sided cooling power semiconductor package according to another embodiment of the present invention.

[0125] Fig. 22 yes Fig.21 A cross-sectional view of a connection member of a double-sided cooling type power semiconductor package before shrinkage.

[0126] Fig.23 yes Fig.21 A cross-sectional view of a connection member of a double-sided cooling power semiconductor package after shrinkage.

[0127] Fig.24 It is used to illustrate Fig. 22 Figure 2 shows the effect of a double-sided cooling type power semiconductor package. DETAILED DESCRIPTION

[0128] Hereinafter, with reference to the accompanying drawings, the embodiments disclosed in this specification are described in detail. In this specification, even in different embodiments, the same or similar components are given the same or similar reference numerals, and the previous description is quoted instead of the description thereof. Unless otherwise clearly indicated in the context, the singular expressions used in this specification include plural expressions. In addition, in the process of describing the embodiments disclosed in this specification, when it is judged that the specific description of the relevant known technology will confuse the gist of the embodiments disclosed in this specification, the detailed description of the known technology is omitted. In addition, it should be noted that the drawings are only used to easily understand the embodiments disclosed in this specification, and should not be interpreted as the technical ideas disclosed in this specification being limited by the drawings.

[0129] Figure 1 is a three-dimensional diagram of a double-sided cooling power semiconductor package according to an embodiment of the present invention, Figure 2 yes Figure 1 A cross-sectional view of a connection member of a double-sided cooling type power semiconductor package before shrinkage, Figure 3 yes Figure 1 A cross-sectional view of a double-sided cooling type power semiconductor package, Figure 4 It is used to illustrate Figure 3 Figure 2 shows the effect of a double-sided cooling type power semiconductor package.

[0130] like Figures 1 to 3 As shown, a double-sided cooling type power semiconductor package 100 according to an embodiment of the present invention comprises a power semiconductor package 110 , a cooler 200 and a connecting member 300 .

[0131] The power semiconductor package 110 has a rectangular plate shape having a generally thin thickness.

[0132] For example, the power semiconductor package 110 includes a plurality of circuit elements 1101, an upper substrate 1102 disposed on the upper side along the thickness direction of the plurality of circuit elements 1101, and a lower substrate 1103 disposed on the lower side of the plurality of circuit elements 1101. Although not specifically shown in the drawings, for example, the plurality of circuit elements 1101 may be configured to include insulated gate bipolar transistors (IGBTs) and diodes.

[0133] A power line 1104 is disposed on one side of the power semiconductor package 110, and a plurality of signal lines 1105 are disposed on the other side of the power line 1104. In this embodiment, the power line 1104 is formed in a thin plate shape, and the signal line 1105 is implemented in a rectangular strip shape.

[0134] A flow path 203 for cooling fluid to flow is provided inside the cooler 200 .

[0135] For example, the double-sided cooling type power semiconductor package 100 of the present embodiment is disposed in a vehicle or an electric vehicle, and the cooling fluid may be implemented by cooling water of the vehicle or the electric vehicle.

[0136] For example, the cooler 200 is configured to be in contact with two plate surfaces of the power semiconductor package 110 .

[0137] Here, the two board surfaces of the power semiconductor package 110 refer to relatively wide surfaces on which the upper substrate 1102 and the lower substrate 1103 are respectively arranged.

[0138] A plurality of coolers 200 are provided so as to be disposed on both sides along the thickness direction of the power semiconductor package 110 .

[0139] For example, the cooler 200 includes a lower cooler 201 disposed on one side (lower side in the drawing) of the power semiconductor package 110 and an upper cooler 202 disposed on the other side (upper side in the drawing) of the power semiconductor package 110 .

[0140] For example, the upper cooler 202 is in contact with the upper substrate 1102 to enable heat exchange.

[0141] For example, the lower cooler 201 is in contact with the lower substrate 1103 to enable heat exchange.

[0142] A heat conducting material 205 is disposed between contact surfaces of the power semiconductor package 110 and the cooler 200 .

[0143] As a result, the amount of air between the contact surfaces of the power semiconductor package 110 and the cooler 200 is reduced, so that the heat energy of the power semiconductor package 110 can be easily transferred to the cooler 200 .

[0144] According to such a configuration, cooling of the power semiconductor package 110 can be promoted.

[0145] For example, the thermal conductive material 205 includes thermal grease or thermal compound.

[0146] For example, before the power semiconductor package 110 and / or the cooler 200 are combined, the thermal grease or the thermal conductive compound may be applied to each contact surface of the power semiconductor package 110 and / or the cooler 200, and then the power semiconductor package 110 and the cooler 200 may be pressurized to make them close to each other. Thus, the thermal conductive material 205 is inserted into the gap between the contact surfaces of the power semiconductor package 110 and the cooler 200, so that the amount of air between the power semiconductor package 110 and the cooler 200 can be greatly reduced.

[0147] Thus, heat energy generated in the power semiconductor package 110 can be easily transferred to the cooler 200 (the lower cooler 201 and the upper cooler 202 ).

[0148] On the other hand, as another example, the thermal conductive material 205 may include solder. The solder is provided on the contact surface between the power semiconductor package 110 and the cooler 200, and the solder is heated to melt, so that the molten solder can be uniformly infiltrated into the gap between the contact surfaces between the power semiconductor package 110 and the cooler 200. As a result, the amount of air between the contact surfaces between the power semiconductor package 110 and the cooler 200 is reduced, so that the heat energy of the power semiconductor package 110 can be easily transferred to the cooler 200. In particular, since the solder is a metal and has relatively excellent heat transfer characteristics, the heat energy of the power semiconductor package 110 can be more easily transferred to the cooler 200.

[0149] For example, the cooler 200 (upper cooler 202 , lower cooler 201 ) includes an inner plate 2001 in contact with the power semiconductor package 110 and an outer plate 2002 spaced apart from the inner plate 2001 .

[0150] For example, the inner plate 2001 and the outer plate 2002 of the cooler 200 may be respectively configured to have a length greater than a width.

[0151] For example, pin holes 207 may be respectively provided on the outer contours (edges) of the inner plate 2001 and the outer plate 2002 of the cooler 200 , and pins (not shown) for determining positions during assembly are inserted into the pin holes 207 .

[0152] A flow path 203 for the cooling fluid to flow is formed inside the inner plate 2001 and the outer plate 2001 of the cooler 200 .

[0153] The inner plate 2001 of the cooler 200 is configured to protrude toward both sides (left and right sides in the drawing) along the plate surface direction of the power semiconductor package 110 .

[0154] The outer plate 2002 of the cooler 200 is combined with the outer surface of the inner plate 2001 to form a flow path 203 inside for the cooling fluid to flow.

[0155] For example, the outer plate 2002 of the cooler 200 has a rectangular plate-shaped upper plate 20021 and a side wall portion 20022 bent along the edge of the plate upper plate 20021 to contact and combine with the plate surface of the inner plate 2001 .

[0156] Here, for example, the inner plate 2001 and the outer plate 2002 may be joined to each other. For example, the inner plate 2001 and the outer plate 2002 may be formed of a metal member. For example, the inner plate 2001 and the outer plate 2002 may be formed of an aluminum (Al) member.

[0157] For example, the inner plate 2001 and the outer plate 2002 may be integrated into one by brazing.

[0158] The outer plate 2002 of the upper cooler 202 is disposed on the upper side of the inner plate 2001 .

[0159] The outer plate 2002 of the lower cooler 201 is disposed on the lower side of the inner plate 2001 .

[0160] On the other hand, the lower cooler 201 is provided with an inflow portion 20023 for the cooling fluid to flow in and an outflow portion 20024 for the cooling fluid to flow out after passing through the interior of the cooler 200 .

[0161] For example, Figure 4 As shown, the lower cooler 201 may be connected to a cooling fluid circulation loop 400 for circulating the cooling fluid.

[0162] The inflow portion may be connected to an outflow-side end portion of the cooling fluid circulation loop 400 , and the outflow portion may be connected to an inflow-side end portion of the cooling fluid circulation loop 400 .

[0163] The cooling fluid circulation loop 400 is provided with a heat exchanger 401 for cooling the cooling fluid and a pump 402 for facilitating movement of the cooling fluid.

[0164] Thus, the cooling fluid whose temperature rises through the cooler 200 and heat exchange with the power semiconductor package 110 may be cooled through the heat exchanger 401 of the cooling fluid circulation loop 400 .

[0165] The cooler 200 (upper cooler 202 and lower cooler 201 ) is provided with a heat sink 2003 , one side of the heat sink 2003 is connected to the inner plate 2001 , and the other side is connected to the outer plate 2002 .

[0166] Thus, the contact area between the cooler 200 and the cooling fluid can be increased.

[0167] The heat sink 2003 may be configured to correspond to a high heat generating portion of the power semiconductor package 110 .

[0168] For example, the heat sink 2003 may be configured to adjust the amount of heat exchange with the cooling fluid by adjusting the size, number, and spacing.

[0169] That is, in order to increase the amount of heat exchange with the cooling fluid, the size and number of the heat sinks 2003 may be increased, or the intervals therebetween may be reduced.

[0170] Thus, a local temperature increase of the power semiconductor package 110 can be suppressed.

[0171] In this embodiment, the heat sink 2003 may be formed of a metal member.

[0172] For example, the heat sink 2003 may be formed of an aluminum (Al) member.

[0173] The heat sink 2003 may be integrated with the inner plate 2001 and the outer plate 2002 by brazing.

[0174] For example, the heat sink 2003 may be formed by bending a long plate-shaped member.

[0175] For example, the heat sink 2003 may include a contact portion 20031 that contacts the outer plate 2002 and a protruding portion 20032 having a quadrilateral cross section that protrudes from the contact portion 20031 and contacts the inner plate 2001 .

[0176] For example, the heat sink 2003 is configured such that the contact portions 20031 and the protruding portions 20032 are alternately arranged with a preset length along a direction.

[0177] The lower cooler 201 and the upper cooler 202 may be connected to communicate with each other using the connection member 300 .

[0178] Thus, the moving direction of the cooling fluid of the lower cooler 201 is the same as the moving direction of the cooling fluid of the upper cooler 202 .

[0179] Thus, it is possible to suppress the temperature deviation between the top surface and the bottom surface of the power semiconductor package 110 .

[0180] For example, the connecting member 300 is implemented to be retractable.

[0181] The connecting member 300 may be implemented by a bellows.

[0182] For example, the connection member 300 is provided with a tubular portion 3001 having a tubular shape and disposed at both sides, and a corrugated portion 3001 telescopically formed between the tubular portions 3001 .

[0183] The connection member 300 is configured to be retractable along a thickness direction of the power semiconductor package 110 .

[0184] In this embodiment, since the thickness direction of the power semiconductor package 110 is arranged along the up-down direction, the connection member 300 can be extended and retracted along the up-down direction.

[0185] The connection member 300 is configured to have a length significantly greater than (for example, two to three times) the thickness of the power semiconductor package 110 when extended.

[0186] The connection member 300 is configured to have a length corresponding to the thickness of the power semiconductor package 110 when contracted.

[0187] A connection member coupling portion 20011 is provided on each inner plate 2001 of the lower cooler 201 and the upper cooler 202 so that the connection member 300 can be coupled.

[0188] For example, the connection member coupling portion 20011 may be formed to penetrate so that both ends (the tubular portion 3001 ) of the connection member 300 can be inserted and coupled therein.

[0189] In this embodiment, the lower cooler 201, the upper cooler 202 and the connecting member 300 may be integrated into one by brazing.

[0190] This can suppress leakage of the cooling fluid.

[0191] With such a configuration, the heat sink 2003 is inserted between the inner plate 2001 and the outer plate 2002 , and the inner plate 2001 , the outer plate 2002 , and the heat sink 2003 can be integrated by brazing.

[0192] When the lower cooler 201 and the upper cooler 202 are manufactured separately, the connecting member 300 may be disposed between the lower cooler 201 and the upper cooler 202 .

[0193] The upper end portion of the connection member 300 may be inserted into the connection member insertion portion 20011 coupled to the upper cooler 202 , and the lower end portion may be inserted into the connection member insertion portion 20011 coupled to the lower cooler 201 .

[0194] Here, if Figure 2 As shown, the connection member 300 may be respectively combined with the lower cooler 201 and the upper cooler 202 in an extended state.

[0195] The connection member 300 , the lower cooler 201 , and the upper cooler 202 may be integrated into one by brazing.

[0196] On the other hand, after the connection member 300 , the lower cooler 201 , and the upper cooler 202 are combined, the power semiconductor package 110 may be inserted and combined between the lower cooler 201 and the upper cooler 202 .

[0197] Here, the heat conductive material 205 may be inserted between the contact surfaces between the power semiconductor package 110 and the upper cooler 202 and between the contact surfaces between the power semiconductor package 110 and the lower cooler 201 .

[0198] When the thermal conductive material 205 is located between the contact area between the power semiconductor package 110 and the lower cooler 201 and the contact area between the power semiconductor package 110 and the upper cooler 202 , the lower cooler 201 and the upper cooler 202 may be pressurized and shrunk along the thickness direction of the power semiconductor package 110 .

[0199] Here, the lower cooler 201 and the upper cooler 202 may be pressurized to such an extent that the lower cooler 201 and the upper cooler 202 can be closely attached to both side surfaces of the power semiconductor package 110 .

[0200] Thus, the amount of air in the contact area between the power semiconductor package 110 and the lower cooler 201 and the contact area between the power semiconductor package 110 and the upper cooler 202 can be significantly reduced.

[0201] Thus, heat energy generated in the power semiconductor package 110 can be quickly transferred to the lower cooler 201 and the upper cooler 202 .

[0202] On the other hand, Figure 4 As shown, the inflow part 20023 and the outflow part 20024 of the lower cooler 201 may be connected to the cooling fluid circulation loop 400. The cooling fluid circulation loop 400 is provided with a heat exchanger 401 through which the cooling fluid is cooled by heat exchange and a pump 402 for promoting movement (circulation) of the cooling fluid.

[0203] When the operation starts, heat energy is generated due to the heat generation of the power semiconductor package 110 , resulting in a temperature rise.

[0204] Heat energy generated in the power semiconductor package 110 is transferred to the lower cooler 201 and the upper cooler 202 .

[0205] When the operation starts, the pump 402 of the cooling fluid circulation loop 400 is activated, and the cooling fluid circulates along the cooling fluid circulation loop 400 .

[0206] The cooling fluid of the cooling fluid circulation loop 400 passes through the heat exchanger 401 and is cooled.

[0207] The cooling fluid that has passed through the heat exchanger 401 and has been cooled flows into the lower cooler 201 through the inflow portion 20023 .

[0208] A portion of the cooling fluid flowing into the inlet portion 20023 moves toward the downstream side, passes through the fins 2003 of the lower cooler 201 , absorbs heat energy, and moves toward the outlet portion 20024 with the temperature increased.

[0209] Another part of the cooling fluid flowing into the inflow portion 20023 moves toward the upper cooler 202 through the connection member 300 provided on the side of the inflow portion 20023 .

[0210] The cooling fluid moved to the upper cooler 202 passes through the fins 2003 of the upper cooler 202 and absorbs heat energy to increase its temperature, and then moves to the outflow portion 20024 through the connection member 300 on the outflow portion 20024 side.

[0211] The cooling fluid whose temperature rises due to absorbing the thermal energy of the power semiconductor package 110 moves toward the outflow portion 20024 and circulates along the cooling fluid circulation loop 400 through the outflow portion 20024 to be cooled. By repeating the above process, the thermal energy generated in the power semiconductor package 110 is absorbed to cool it.

[0212] On the other hand, when the power semiconductor package 110 is thermally expanded (contracted) in the thickness direction when the operation is started, the connection member 300 is extended (contracted) in the thickness direction (vertical direction in the drawing) of the power semiconductor package 110 to absorb the deformation.

[0213] Thus, it is possible to suppress damage to the power semiconductor package 110 , the lower cooler 201 , and the upper cooler 202 .

[0214] Figure 5 yes Figure 1 A cross-sectional view of a modified example of a double-sided cooling type power semiconductor package, Figure 6 yes Figure 5 A cross-sectional view of the cooler in FIG. Figure 7 yes Figure 5 A cross-sectional view of the connection member in the compressed state, Figure 8 It is used to illustrate Figure 7 Figure 2 shows the effect of a double-sided cooling type power semiconductor package.

[0215] like Figures 5 to 7 As shown, the double-sided cooling type power semiconductor package 100 a of the present embodiment includes a power semiconductor package 110 , a cooler 200 a and a connection member 300 .

[0216] For example, the power semiconductor package 110 includes a plurality of circuit elements 1101 , an upper substrate 1102 , and a lower substrate 1103 . The upper substrate 1102 is disposed on the upper side of the plurality of circuit elements 1101 , and the lower substrate 1103 is disposed on the lower side of the plurality of circuit elements 1101 .

[0217] A plurality of power lines 1104 are disposed on one side of the power semiconductor package 110 .

[0218] A plurality of signal lines 1105 are disposed on the other side (opposite side) of the power semiconductor package 110 .

[0219] A plurality of coolers 200 a are provided, and the plurality of coolers 200 a are arranged on both sides along the thickness direction of the power semiconductor package 110 .

[0220] Specifically, the plurality of coolers 200 a include a lower cooler 201 a disposed at a lower side of the power semiconductor package 110 and an upper cooler 202 a disposed at an upper side of the power semiconductor package 110 .

[0221] For example, the plurality of coolers 200 a are each provided with a main body 210 , and a flow path 203 of a cooling fluid is formed inside the main body 210 .

[0222] For example, Figure 6 As shown, the main body 210 has an inner plate 2101, an outer plate 2102 and a partition 2103, the inner plate 2101 is in contact with the power semiconductor package 110, the outer plate 2102 is separated from the inner plate 2101, one side of the partition 2103 is connected to the inner plate 2101, and the other side is connected to the outer plate 2102.

[0223] Thus, the main body 210 of the cooler 200a can be formed by extrusion, and thus mass production can be easily achieved.

[0224] For example, the two side walls 2104 of the main body 210 may be implemented as an arc cross-section shape convex outward.

[0225] The plurality of coolers 200a (the lower cooler 201a and the upper cooler 202a) include headers 220 provided at the inflow side end and the outflow side end, respectively.

[0226] For example, the head portion 220 includes an inner plate 2201 and an outer plate 2202 . The inner plate 2201 and the outer plate 2202 are spaced apart from each other in the thickness direction of the power semiconductor package 110 to form a flow path 203 of a cooling fluid therein.

[0227] A main body coupling portion 2203 for coupling with the main body 210 is provided on one side of the head portion 220 .

[0228] For example, the main body coupling portion 2203 may be formed to be open to the outside so that the end of the main body 210 can be inserted therein.

[0229] The header 220 provided at the inflow side of the lower cooler 201a is provided with an inflow portion 22021 into which the cooling fluid flows.

[0230] The inflow portion 22021 is formed through the outer plate 2202 of the inflow-side head portion 220 of the lower cooler 201 a.

[0231] The header 220 disposed on the outflow side of the lower cooler 201a is provided with an outflow portion 22022 through which the cooling fluid flows out.

[0232] The outflow portion 22022 is formed through the outer plate 2202 of the outflow-side head portion 220 of the lower cooler 201a.

[0233] On the other hand, a connection member 300 is vertically disposed between the head portion 220 of the lower cooler 201 a and the head portion 220 of the upper cooler 202 a .

[0234] The lower cooler 201 a and the upper cooler 202 a are connected to communicate with each other by the connection member 300 .

[0235] Thus, the moving direction of the cooling fluid of the lower cooler 201 a and the moving direction of the cooling fluid of the upper cooler 202 a are the same as each other.

[0236] Thus, it is possible to suppress the temperature deviation between the bottom surface and the top surface of the power semiconductor package 110 .

[0237] Specifically, the connection members 300 are respectively disposed between the inlet-side header 220 of the upper cooler 202a and the inlet-side header 220 of the lower cooler 201a and between the outlet-side header 220 of the upper cooler 202a and the outlet-side header 220 of the lower cooler 201a.

[0238] For example, the connection member 300 has a tubular portion 3001 having a tubular shape and provided at both sides, and a corrugated portion 3002 telescopically formed between the tubular portions 3001 .

[0239] Thus, when the power semiconductor package 110 is thermally expanded, the connection member 300 (the wrinkled portion 3002 ) absorbs the deformation, thereby preventing the power semiconductor package 110 , the lower cooler 201 a , and the upper cooler 202 a from being damaged.

[0240] In this embodiment, the connecting member 300 may be configured to have a circular or elliptical cross section.

[0241] For example, the corrugated portion 3002 may be configured to have a circular or elliptical cross-section.

[0242] In this embodiment, the tubular portion 3001 and the pleated portion 3002 may be configured to have an elliptical cross-sectional shape having a transversely longer length in the moving direction of the cooling fluid.

[0243] For example, the pleated portion 3002 has a top portion 30021 and a bottom portion 30022 , wherein the top portion 30021 has a maximum outer width and the bottom portion 30022 has a minimum outer width.

[0244] The bottom portion 30022 is disposed between the top portions 30021 along the telescopic direction.

[0245] In this embodiment, the body 210 , the head 220 , and the connecting member 300 may be respectively formed of metal members (eg, aluminum (Al) members).

[0246] The head portions 220 are respectively provided with connection member coupling portions 230 , and the connection members 300 are coupled to the connection member coupling portions 230 in an overlapping manner along a thickness direction of the power semiconductor package 110 .

[0247] Thus, the length of the pleated portion 3002 of the connecting member 300 can be sufficiently ensured, so that the connecting member 300 can be easily extended and retracted.

[0248] For example, the connection member coupling portion 230 has a recessed portion 2301 recessed in a thickness direction so as to accommodate an end portion of the connection member 300 .

[0249] Thus, when the connection member 300 contracts, it is possible to suppress the connection member 300 from being excessively compressed.

[0250] In this embodiment, the connecting member 300 is made in an extended state (refer to Figure 5 ).

[0251] The connecting member 300 may be shrunk so that the lower cooler 201a and the upper cooler 202a can contact the two plate surfaces of the power semiconductor package 110 respectively (see Figure 7 ).

[0252] The recessed portion 2301 is formed in each head portion 220 so that the two ends of the connecting member 300 are respectively accommodated in the recessed portion 2301, and thus the connecting member 300 has a relatively long length even after contraction. Thus, when the connecting member 300 contracts, the pleated portion 3002 can be prevented from being overly compressed.

[0253] The recessed portion 2301 has an inner width greater than the maximum outer width of the connecting member 300 (the outer width of the folded portion 3002 ).

[0254] Thus, when the connection member 300 contracts, the outermost area (the pleated portion 3002 ) can be accommodated inside the recessed portion 2301 along the width direction of the connection member 300 without interfering with the recessed portion 2301 .

[0255] In this embodiment, for example, the recessed portion 2301 is implemented as an elliptical cross-sectional shape.

[0256] Specifically, the recessed portion 2301 has a recessed bottom 23011 recessed from the inner plate 2202 in the thickness direction and an outer wall portion 23012 formed in a cylindrical shape from the outer edge of the recessed bottom 23011 to have an elliptical cross section.

[0257] The connection member coupling portion 230 has an overlapping section 2302 , and the overlapping section 2302 protrudes from the recessed portion 2301 to overlap with the end portion (the tubular portion 3001 ) of the connection member 300 along the length direction.

[0258] Thus, when the connection member 300 contracts, it is possible to prevent the wrinkled portion 3002 of the connection member 300 from contacting the recessed bottom 23011 along the length direction of the connection member 300 .

[0259] The overlapping section 2302 is disposed at the center of the recessed portion 2301 (recessed bottom 23011 ).

[0260] Considering that the overlapping section 2302 is provided on the inner side of the recessed portion 2301 (recessed bottom 23011 ), the overlapping section 2302 may be referred to as an “inner wall portion”.

[0261] For example, the overlapping section 2302 has an elliptical cross-sectional shape corresponding to the shape of the tubular portion 3001 of the connecting member 300 .

[0262] In this embodiment, the protruding length of the overlapping section 2302 is configured to be smaller than the depth of the recessed portion 2301 .

[0263] Thus, when the connecting member 300 contracts, the folded portion 3002 and the recessed portion 2301 can be prevented from coming into contact with each other.

[0264] The body 210 and the head 220 of the cooler 200a may be connected by brazing.

[0265] The cooler 200 a (head 220 ) and the connection member 300 may be connected by brazing.

[0266] Thus, the bonding force between the cooler 200 a and the connecting member 300 can be improved.

[0267] In addition, leakage of the cooling fluid from between the cooler 200 a and the connecting member 300 can be suppressed.

[0268] If the lower cooler 201a and the upper cooler 202a are manufactured according to such a structure, the upper cooler 202a can be arranged to be separated from the upper side of the lower cooler 201a.

[0269] The connection member 300 may be disposed between the head portion 220 of the lower cooler 201 a and the head portion 220 of the upper cooler 202 a , respectively.

[0270] Here, if Figure 5As shown, each of the connecting members 300 is connected between the lower cooler 201a and the upper cooler 202a in an extended state.

[0271] On the other hand, after the heat conductive material 205 is set in the contact area between the power semiconductor package 110 and the lower cooler 201a and the contact area between the power semiconductor package 110 and the upper cooler 202a, the lower cooler 201a and the upper cooler 202a can be pressurized and shrunk so that they are in contact with the two plate surfaces (the top surface and the bottom surface in the drawing) of the power semiconductor package 110.

[0272] As a result, the folded portions 3002 of the connection members 300 shrink, the top surface of the lower cooler 201 a is in close contact with the bottom surface of the power semiconductor package 110 , and the bottom surface of the upper cooler 202 a is in close contact with the top surface of the power semiconductor package 110 .

[0273] The inflow portion 22021 and the outflow portion 22022 of the lower cooler 201 a may be respectively connected to a cooling fluid circulation loop 400 for circulating the cooling fluid.

[0274] The cooling fluid circulation loop 400 is provided with a heat exchanger 401 for cooling the cooling fluid.

[0275] A pump 402 is provided in the cooling fluid circulation loop 400 to facilitate movement of the cooling fluid.

[0276] The heat exchanger 401 is connected to the inflow portion 22021 of the lower cooler 201 a on the downstream side (outflow side) of the heat exchanger 401 based on the moving direction of the cooling fluid circulated by the pump 402 .

[0277] The outflow portion 22022 of the lower cooler 201 a is connected to the upstream side (inflow side) of the heat exchanger 401 .

[0278] When the operation starts, the temperature of the power semiconductor package 110 rises due to the heat generated by the power semiconductor package 110 , and the heat energy generated from the power semiconductor package 110 moves to the lower cooler 201 a and the upper cooler 202 a .

[0279] When the operation starts, the pump 402 is operated, and the cooling fluid cooled in the heat exchanger 401 flows into the inlet portion 22021 of the lower cooler 201a.

[0280] A portion of the cooling fluid flowing into the inflow portion 22021 passes through the interior of the lower cooler 201 a and absorbs heat energy generated from the power semiconductor package 110 , and then moves toward the outflow portion 22022 in a state of increasing temperature.

[0281] Another part of the cooling fluid flowing into the inflow portion 22021 moves toward the upper cooler 202a through the connection member 300 adjacent to the inflow portion 22021. The cooling fluid moving to the upper cooler 202a absorbs the heat energy generated in the power semiconductor package 110 to increase the temperature, and then moves toward the outflow portion 22022 via the connection member 300 disposed adjacent to the outflow portion 22022.

[0282] The cooling fluid whose temperature is increased by the lower cooler 201a and the upper cooler 202a moves to the cooling fluid circulation loop 400 through the outflow portion 22022, and after being cooled in the heat exchanger 401, flows into the inflow portion 22021 of the lower cooler 201a. By repeating this process, the power semiconductor package 110 is continuously cooled.

[0283] Fig. 9 is a three-dimensional diagram of a double-sided cooling power semiconductor package according to another embodiment of the present invention, Fig.10 yes Fig. 9 A three-dimensional diagram of the upper cooler and the lower cooler in FIG. Fig.11 yes Fig.10 Separated stereogram of the upper cooler and the lower cooler in the figure, Fig.12 yes Fig. 9 A cross-sectional view of a vertical connection member of a double-sided cooling power semiconductor package before shrinkage.

[0284] like Figures 9 to 12 As shown, the double-sided cooling type power semiconductor package 100 b of the present embodiment includes a power semiconductor package 110 , a cooler 200 b and a connection member 300 .

[0285] The power semiconductor package 110 includes a plurality of circuit elements 1101 , an upper substrate 1102 , and a lower substrate 1103 . The upper substrate 1102 is disposed on the upper side of the plurality of circuit elements 1101 , and the lower substrate 1103 is disposed on the lower side of the plurality of circuit elements 1101 .

[0286] A plurality of power lines 1104 are disposed on one side of the power semiconductor package 110 .

[0287] A plurality of signal lines 1105 are disposed on the other side (opposite side) of the power semiconductor package 110 .

[0288] For example, the power semiconductor package 110 may be composed of a plurality of power semiconductor packages 110 spaced apart along a board surface direction.

[0289] For example, the power semiconductor package 110 includes a first power semiconductor package 111 , a second power semiconductor package 112 , and a third power semiconductor package 113 that are separated along a board direction.

[0290] A flow path 203 of a cooling fluid is disposed inside the cooler 200 b , and the cooler 200 b is composed of a plurality of coolers 200 b and is disposed on both sides (the upper side and the lower side in the drawing) of the power semiconductor package 110 .

[0291] For example, the cooler 200 b has a lower cooler 201 b disposed on the lower side of the power semiconductor package 110 and an upper cooler 202 b disposed on the upper side.

[0292] In the present embodiment, the lower cooler 201 b is configured to be able to perform heat exchange under the first power semiconductor package 111 , the second power semiconductor package 112 , and the third power semiconductor package 113 .

[0293] For example, the lower cooler 201b is constructed to include a first lower cooler 201b1, a second lower cooler 201b2 and a third lower cooler 201b3, the first lower cooler 201b1 contacts the bottom surface of the first power semiconductor package 111 to enable heat exchange, the second lower cooler 201b2 contacts the bottom surface of the second power semiconductor package 112 to enable heat exchange, and the third lower cooler 201b3 contacts the bottom surface of the third power semiconductor package 113 to enable heat exchange.

[0294] The upper cooler 202 b is configured to be able to perform heat exchange on the upper sides of the first power semiconductor package 111 , the second power semiconductor package 112 , and the third power semiconductor package 113 .

[0295] For example, the upper cooler 202b is constructed to include a first upper cooler 202b1, a second upper cooler 202b2 and a third upper cooler 202b3, the first upper cooler 202b1 contacts the top surface of the first power semiconductor package 111 to enable heat exchange, the second upper cooler 202b2 contacts the top surface of the second power semiconductor package 112 to enable heat exchange, and the third upper cooler 202b3 contacts the top surface of the third power semiconductor package 113 to enable heat exchange.

[0296] In this embodiment, the lower cooler 201b and the upper cooler 202b are respectively constructed as a main body 210 having the same structure.

[0297] Fig.13 yes Fig.11 The main body of the cooler (lower cooler) is shown in FIG. Fig.13 As shown, the main body 210 of the lower cooler 201b has an inner plate 2101, an outer plate 2102 and a partition 2103, the inner plate 2101 is in contact with the plate surface of the power semiconductor package 110, the outer plate 2102 is separated from the inner plate 2101, one side of the partition 2103 is connected to the inner plate 2101, and the other side is connected to the outer plate 2102.

[0298] The plurality of partitions 2103 are arranged to be spaced apart from each other side by side.

[0299] The two side walls 2104 connecting the inner plate 2101 and the outer plate 2102 may be implemented in a curved cross-sectional shape convex outward.

[0300] Thus, the main body 210 of the cooler 200 can be extruded and thus can be easily manufactured.

[0301] Fig.14 yes Fig.11 A three-dimensional diagram of the horizontal connecting member (upper horizontal connecting member) in FIG. Fig.15 yes Fig.12 An enlarged view of the horizontal connecting member (upper horizontal connecting member) area in FIG. Fig.16 yes Fig.11 A three-dimensional diagram of the vertical connecting member in Fig.17 yes Fig.12 A magnified view of the vertical connecting member area in .

[0302] like Figures 14 to 17 As shown, a flow path 203 of the cooling fluid is disposed inside the connecting member 300 , and the connecting member 300 is communicatively connected to a plurality of the coolers 200 .

[0303] The connecting member 300 is formed to be retractable.

[0304] Specifically, the connection member 300 is configured in a bellows shape.

[0305] For example, the connection member 300 is configured to have an elliptical cross-sectional shape.

[0306] For example, the connection member 300 includes a tubular portion 3001 having an elliptical cross-sectional shape and disposed on both sides, and a corrugated portion 3002 formed telescopically between the tubular portions 3001 .

[0307] The connection member 300 includes a horizontal connection member 300 a connecting the three bodies 210 in a horizontal direction.

[0308] For example, the horizontal connection member 300a is configured to include a plurality of upper horizontal connection members 300a1 horizontally connecting the main body 210 of the upper cooler 202b.

[0309] For example, the horizontal connection member 300a includes a plurality of lower horizontal connection members 300a2 horizontally connecting the main body 210 of the lower cooler 201b.

[0310] In this embodiment, the tubular portions 3001 of the horizontal connection members 300a (the upper horizontal connection member 300a1 and the lower horizontal connection member 300a2) are respectively configured to be open to the outside so that the end of the main body 210 can be inserted therein.

[0311] The body 210 and the horizontal connection member 300a (the upper horizontal connection member 300a1 and the lower horizontal connection member 300a2) may be formed of metal members (eg, aluminum (Al) members), respectively.

[0312] Fig.18 yes Fig.11 A stereoscopic view of the outflow side of the head. Fig.12 , Fig.17 and Fig.18 The cooler 200 has a head 220 respectively arranged at the inlet side end of the lower cooler 201b, the inlet side end of the upper cooler 202b, the outlet side end of the lower cooler 201b and the outlet side end of the upper cooler 202b.

[0313] Here, the header 220 provided at the inflow side end of the cooler 200 may be referred to as an inflow side header 220 , and the header 220 provided at the outflow side end of the cooler 200 may be referred to as an outflow side header 220 .

[0314] For example, each of the headers 220 includes an inner plate 2201 and an outer plate 2202 , and the inner plate 2201 and the outer plate 2202 are spaced apart from each other in the thickness direction of the power semiconductor package 110 , and a flow path 203 of a cooling fluid is formed inside.

[0315] The head 220 may be formed of a metal member (eg, an aluminum member).

[0316] The head portion 220 of the lower cooler 201 b and the head portion 220 of the upper cooler 202 b may be spaced apart in a thickness direction (up-down direction in the drawing) of the power semiconductor package 110 .

[0317] The header 220 of the lower cooler 201 b and the header 220 of the upper cooler 202 b may be communicatively connected using the connection member 300 .

[0318] The connection member 300 includes a vertical connection member 300 b vertically disposed between the head 220 of the lower cooler 201 b and the head 220 of the upper cooler 202 b .

[0319] Specifically, an inflow-side vertical connection member 300 b may be provided between the inflow-side headers 220 , and an outflow-side vertical connection member 300 b may be provided between the outflow-side headers 220 .

[0320] Thus, the lower cooler 201b and the upper cooler 202b may be connected in parallel to each other.

[0321] The moving direction of the cooling fluid of the lower cooler 201 b is the same as the moving direction of the cooling fluid of the upper cooler 202 b .

[0322] With such a configuration, it is possible to suppress the temperature deviation between the bottom surface and the top surface of each of the first power semiconductor package 111 , the second power semiconductor package 112 , and the third power semiconductor package 113 .

[0323] The head portions 220 are respectively provided with connection member coupling portions 230 coupled to the connection members 300 (vertical connection members 300 b ).

[0324] The connection member coupling portion 230 of the head portion 220 is configured to be coupled in an overlapping manner along a thickness direction of the power semiconductor package 110 .

[0325] The connection member coupling portion 230 of the head portion 220 has a recessed portion 2301 recessed in the thickness direction so as to accommodate an end portion of the connection member 300 (vertical connection member 300 b ).

[0326] The recessed portion 2301 has an inner width greater than the maximum outer width of the connection member 300 (vertical connection member 300 b ).

[0327] For example, the recessed portion 2301 has a recessed bottom 23011 recessed along the thickness direction of the power semiconductor package 110 and a side wall portion 23012 having an inner width greater than the maximum outer width of the connection member 300 (vertical connection member 300 b ).

[0328] The connection member coupling portion 230 has an overlapping section 2302 , and the overlapping section 2302 protrudes from the recessed portion 2301 to overlap with the end of the connection member 300 (vertical connection member 300 b ) along the length direction.

[0329] The overlapping area 2302 is configured to protrude from the recessed bottom 23011 .

[0330] The overlapping section 2302 is configured to be insertable into the tubular portion 3001 of the connection member 300 (vertical connection member 300 ).

[0331] For example, the overlapping section 2302 has an outer surface that is in surface contact with the inner surface of the tubular portion 3001 of the connection member 300 (vertical connection member 300 b ).

[0332] Fig.19 yes Fig.12 A cross-sectional view of a vertical connection member of a double-sided cooling power semiconductor package after shrinkage. Fig.19 As shown, the vertical connection member 300b is in an extended state and has its two ends (tubular portion 3001) respectively connected to the head 220 of the lower cooler 201b and the head 220 of the upper cooler 202b.

[0333] In this embodiment, the head 220 and the vertical connection member 300 b may be integrated into one by brazing.

[0334] An insertion space for the power semiconductor package 110 is formed between the lower cooler 201 b and the upper cooler 202 b .

[0335] The power semiconductor package 110 (the first power semiconductor package 111 , the second power semiconductor package 112 , and the third power semiconductor package 113 ) may be inserted between the lower cooler 201 b and the upper cooler 202 b .

[0336] At this time, heat conductive materials 205 may be respectively inserted between contact surfaces of the power semiconductor package 110 (first power semiconductor package 111 , second power semiconductor package 112 , and third power semiconductor package 113 ) and the cooler 200 (lower cooler 201 b and upper cooler 202 b ).

[0337] After the power semiconductor package 110 is inserted, the vertical connection members 300 b may be compressed by pressure so that the power semiconductor package 110 and the cooler 200 can contact each other.

[0338] Fig. 20 It is used to illustrate Fig.17Figure 1 shows the effect of double-sided cooling on power semiconductor packages. Fig. 20 As shown, the inflow portion 22021 and the outflow portion 22022 of the lower cooler 201 b may be connected to the cooling fluid circulation loop 400 .

[0339] The cooling fluid circulation loop 400 includes a heat exchanger 401 for cooling the cooling fluid by exchanging heat with the cooling fluid.

[0340] A pump 402 is provided in the cooling fluid circulation loop 400 to facilitate movement of the cooling fluid.

[0341] The inflow portion 22021 of the lower cooler 201 b is connected to the outflow side of the heat exchanger 401 based on the moving direction of the cooling fluid moved by the pump 402 .

[0342] In addition, the outflow portion 22022 of the lower cooler 201 b is connected to the inflow side of the heat exchanger 401 with reference to the moving direction of the cooling fluid moved by the pump 402 .

[0343] With such a configuration, when the operation is started, the power semiconductor packages 110 (the first power semiconductor package 111 , the second power semiconductor package 112 , and the third power semiconductor package 113 ) respectively generate heat energy due to heat generation.

[0344] At this time, when the power semiconductor package 110 is thermally deformed (expanded) in the thickness direction, the deformation can be absorbed by the elongation of the vertical connection member 300 b .

[0345] In addition, the thermal deformation (expansion) of the power semiconductor package 110 along the board surface direction can be absorbed by utilizing the contraction of the upper horizontal connection member 300 a 1 .

[0346] Heat energy generated from the power semiconductor package 110 moves to the lower cooler 201 b and the upper cooler 202 b , respectively.

[0347] On the other hand, when the operation is started, the pump 402 is operated to circulate the cooling fluid through the cooling fluid circulation circuit 400 and the cooler 200 (the lower cooler 201 b and the upper cooler 202 b ).

[0348] The cooling fluid in the cooling fluid circulation loop 400 is cooled by heat exchange through the heat exchanger 401 .

[0349] The cooling fluid passing through the heat exchanger 401 moves toward the inlet portion 22021 of the lower cooler 201b.

[0350] A portion of the cooling fluid flowing in through the inflow portion 22021 moves along the interior of the lower cooler 201b (the body 210 and the lower horizontal connection member 300a2). At this time, the cooling fluid in the lower cooler 201b absorbs heat energy generated in the power semiconductor package 110 and increases its temperature.

[0351] Another portion of the cooling fluid flowing in through the inflow portion 22021 moves toward the upper cooler 202 b via the vertical connection member 300 b adjacent to the inflow portion 22021 .

[0352] The cooling fluid moved to the upper cooler 202b moves along the inside (the body 210 and the upper horizontal connection member 300a1) of the upper cooler 202b.

[0353] The cooling fluid passing through the interior of the upper cooler 202 b increases in temperature and moves toward the outflow portion 22022 via the outflow-side header 220 and the outflow-side vertical connection member 300 b .

[0354] The cooling fluid having increased in temperature and flowing out to the outside of the lower cooler 201 b through the outflow portion 22022 passes through the heat exchanger 401 and is cooled by heat dissipation.

[0355] The cooling fluid cooled in the heat exchanger 401 flows into the inlet portion 22021 of the lower cooler 201 b , passes through the lower cooler 201 b and the upper cooler 202 b and absorbs heat energy. By repeating this process, the power semiconductor package 110 is continuously cooled.

[0356] Fig.21 is a three-dimensional diagram of a double-sided cooling power semiconductor package according to another embodiment of the present invention, Fig. 22 yes Fig.21 A cross-sectional view of a connection member of a double-sided cooling type power semiconductor package before shrinkage, Fig.23 yes Fig.21 A cross-sectional view of a connection member of a double-sided cooling power semiconductor package after shrinkage, Fig.24 It is used to illustrate Fig. 22 Figure 2 shows the effect of a double-sided cooling type power semiconductor package.

[0357] like Figure 21 to Figure 24 As shown, the double-sided cooling type power semiconductor package 100 c of the present embodiment includes a power semiconductor package 110 , a cooler 200 c , and a connection member 300 .

[0358] The power semiconductor package 110 includes a plurality of circuit elements 1101 , an upper substrate 1102 , and a lower substrate 1103 . The upper substrate 1102 is disposed on the upper side of the plurality of circuit elements 1101 , and the lower substrate 1103 is disposed on the lower side of the plurality of circuit elements 1101 .

[0359] A plurality of power lines 1104 are disposed on one side of the power semiconductor package 110 .

[0360] A plurality of signal lines 1105 are disposed on the other side (opposite side) of the power semiconductor package 110 .

[0361] In this embodiment, a plurality of power semiconductor packages 110 are provided and spaced apart along the thickness direction.

[0362] For example, the power semiconductor package 110 includes a first power semiconductor package 111 , a second power semiconductor package 112 , and a third power semiconductor package 113 that are separated in a thickness direction.

[0363] A flow path 203 of a cooling fluid is provided inside the cooler 200 c , and the cooler 200 c is configured to be in contact with both sides (the lower side and the upper side in the drawing) of the power semiconductor package 110 .

[0364] Specifically, the cooler 200c has a first cooler 200c1 configured on the lower side of the first power semiconductor package 111, a second cooler 200c2 configured on the upper side of the first power semiconductor package 111, a third cooler 200c3 configured on the upper side of the second power semiconductor package 112, and a fourth cooler 200c4 configured on the upper side of the third power semiconductor package 113.

[0365] The coolers 200 c (the first cooler 200 c 1 , the second cooler 200 c 2 , the third cooler 200 c 3 , and the fourth cooler 200 c 4 ) are respectively provided with a body 210 that contacts the power semiconductor package 110 .

[0366] For example, as described above, the main body 210 can be constructed to have an inner plate 2101, an outer plate 2102 and a plurality of partitions 2103, wherein the inner plate 2101 contacts the power semiconductor package 110, the outer plate 2102 is separated from the inner plate 2101, and one end of the plurality of partitions 2103 is connected to the inner plate 2101, and the other side is connected to the outer plate 2102.

[0367] Thus, the cooler 200c (main body 210) can be easily manufactured.

[0368] A flow path 203 of the cooling fluid is provided inside the cooler 200 c , and the cooler 200 c has a head 220 c connected to the main body 210 .

[0369] The headers 220c are provided on both sides (inflow side and outflow side) of the main bodies 210 of the first cooler 200c1, the second cooler 200c2, the third cooler 200c3, and the fourth cooler 200c4, respectively.

[0370] For example, the head 220c includes a first head 220c1 provided in the first cooler 200c1, a second head 220c2 provided in the second cooler 200c2, a third head 220c3 provided in the third cooler 200c3, and a fourth head 220c4 provided in the fourth cooler 200c4.

[0371] Here, the head 220c disposed on the inflow side of the body 210 may be referred to as an inflow side head 220c, and the head 220c disposed on the outflow side of the body 210 may be referred to as an outflow side head 220c.

[0372] Specifically, for example, the inlet side head 220c has a first inlet side head 220c1 arranged in the first cooler 200c1, a second inlet side head 220c2 arranged in the second cooler 200c2, a third inlet side head 220c3 arranged in the third cooler 200c3, and a fourth inlet side head 220c4 arranged in the fourth cooler 200c4.

[0373] The outflow side head 220c has a first outflow side head 220c1 provided in the first cooler 200c1, a second outflow side head 220c2 provided in the second cooler 200c2, a third outflow side head 220c3 provided in the third cooler 200c3, and a fourth outflow side head 220c4 provided in the fourth cooler 200c4.

[0374] The body 210 and the head 220c may be respectively formed of metal members and integrated with each other by brazing.

[0375] For example, the head portion 220 c includes an inner plate 2201 and an outer plate 2202 , the inner plate 2201 and the outer plate 2202 are spaced apart from each other in the thickness direction of the power semiconductor package 110 , and a flow path 203 of the cooling fluid is formed therein.

[0376] The first cooler 200c1 is provided with an inflow portion 22021 into which the cooling fluid flows.

[0377] The first cooler 200c1 is provided with an outflow portion 22022 for the cooling fluid to flow out.

[0378] The inflow portion 22021 is formed through the inflow-side head portion 220c of the first cooler 200c1.

[0379] The inflow portion 22021 is formed through the outer plate 2202 of the inflow-side head portion 220c of the first cooler 200c1.

[0380] The outflow portion 22022 is formed through the outflow-side head portion 220c of the first cooler 200c1.

[0381] The outflow portion 22022 is formed through the outer plate 2202 of the outflow-side head portion 220c of the first cooler 200c1.

[0382] The heads 220 c of the coolers 200 c may be connected to each other by using a connecting member 300 .

[0383] Considering that the connection member 300 is disposed between the heads 220 c in a vertical direction, it may be referred to as a “vertical connection member”.

[0384] The connecting member 300 is configured to be retractable.

[0385] Thus, when the power semiconductor package 110 is thermally deformed, the connection member 300 can absorb the deformation.

[0386] Thus, it is possible to suppress damage of the power semiconductor package 110 and the cooler 200 c due to thermal deformation.

[0387] The connection member 300 includes a tubular portion 3001 disposed on both sides and having a tubular shape, and an accordion portion 3002 formed between the tubular portions 3001 to be telescopic.

[0388] The connecting member 300 may be respectively arranged between the head 220c1 of the first cooler 200c1 and the head 220c2 of the second cooler 200c2, between the head 220c2 of the second cooler 200c2 and the head 220c3 of the third cooler 200c3, and between the head 220c3 of the third cooler 200c3 and the head 220c4 of the fourth cooler 200c4.

[0389] For example, the connection member 300 has a first vertical connection member 300c1 disposed between the first head 220c1 and the second head 220c2, a second vertical connection member 300c2 disposed between the second head 220c2 and the third head 220c3, and a third vertical connection member 300c3 disposed between the third head 220c3 and the fourth head 220c4.

[0390] A connection member coupling portion 230 is provided on each of the head portions 220 c , and the connection member 300 is coupled to the connection member coupling portion 230 in an overlapping manner along a thickness direction of the power semiconductor package 110 .

[0391] The connection member coupling portion 230 of the head portion 220 c is configured to be coupled in an overlapping manner along the thickness direction of the power semiconductor package 110 .

[0392] The connection member coupling portion 230 of the head portion 220 c has a recessed portion 2301 recessed in the thickness direction so as to accommodate the end portion of the connection member 300 .

[0393] The recessed portion 2301 has an inner width greater than a maximum outer width of the connecting member 300 .

[0394] For example, the recessed portion 2301 is configured to have a recessed bottom 23011 recessed in the thickness direction of the power semiconductor package 110 and a side wall portion 230012 having an inner width greater than a maximum outer width of the connection member 300 .

[0395] The connecting member coupling portion 230 has an overlapping section 2302 . The overlapping section 2302 protrudes from the recessed portion 2301 to overlap with the end of the connecting member 300 along the length direction.

[0396] The overlapping area 2302 is configured to protrude from the recessed bottom 23011 .

[0397] The overlapping section 2302 is configured to be insertable into the tubular portion 3001 of the connecting member 300 .

[0398] For example, the overlapping section 2302 has an outer surface that is in surface contact with the inner surface of the tubular portion 3001 of the connecting member 300 .

[0399] like Fig.23 As shown, each of the connecting members 300 is respectively coupled to each of the heads 220c in an extended state.

[0400] The heads 220 c and the connection member 300 may be integrated into one body by brazing.

[0401] Insertion spaces for the power semiconductor packages 110 (the first power semiconductor package 111 , the second power semiconductor package 112 , and the third power semiconductor package 113 ) are respectively formed between the first cooler 200c1 , the second cooler 200c2 , the third cooler 200c3 , and the fourth cooler 200c4 .

[0402] A heat conducting material 205 may be inserted between contact surfaces of the power semiconductor package 110 and each of the coolers 200 c .

[0403] After the power semiconductor packages 110 are inserted into the respective insertion spaces, the respective connecting members 300 are pressed in the up-down direction to shrink so that the power semiconductor packages 110 can contact the respective coolers 200c (see Fig. 22 ).

[0404] On the other hand, Fig.24 As shown, the inflow portion 22021 and the outflow portion 22022 of the first cooler 200c1 may be connected to the cooling fluid circulation loop 400 .

[0405] The cooling fluid circulation loop 400 has a pump 402 that facilitates movement of the cooling fluid and a heat exchanger 401 that cools the cooling fluid by exchanging heat with the cooling fluid.

[0406] With such a configuration, when the operation starts, the power semiconductor package 110 generates heat energy. The heat energy generated in the power semiconductor package 110 is transferred to the first cooler 200c1, the second cooler 200c2, the third cooler 200c3 and the fourth cooler 200c4.

[0407] When the operation starts, the pump 402 of the cooling fluid circulation loop 400 is operated, and the cooling fluid of the cooling fluid circulation loop 400 passes through the heat exchanger 401 and is cooled.

[0408] The cooling fluid cooled by the heat exchanger 401 flows into the inflow portion 22021 of the first cooler 200c1.

[0409] A portion of the cooling fluid flowing into the inflow portion 22021 moves along the inside of the first cooler 200c1. At this time, the cooling fluid absorbs heat energy generated from the first power semiconductor package 111 and its temperature rises.

[0410] Another part of the cooling fluid flowing into the inflow portion 22021 moves to the second cooler 200c2, the third cooler 200c3, and the fourth cooler 200c4 respectively through the inflow-side connecting member 300.

[0411] The cooling fluid moving toward the second cooler 200c2, the third cooler 200c3, and the fourth cooler 200c4 absorbs the heat energy generated in the power semiconductor package 110 and moves toward the outflow-side head portion 220c with the temperature increased.

[0412] In this embodiment, since the movement direction of the cooling fluid inside the first cooler 200c1, the second cooler 200c2, the third cooler 200c3 and the fourth cooler 200c4 is the same, there is almost no temperature deviation of the cooling fluid, and the bottom and top surfaces of the first power semiconductor package 111, the second power semiconductor package 112 and the third power semiconductor package 113 are almost uniformly cooled, thereby suppressing the temperature deviation of the bottom and top surfaces.

[0413] The cooling fluids respectively moved toward the outflow-side head portions 220 c move toward the cooling fluid circulation circuit 400 through the outflow portion 22022 .

[0414] The cooling fluid moving to the cooling fluid circulation loop 400 is cooled by heat exchange in the heat exchanger 401, and absorbs the thermal energy of the power semiconductor package 110 in the first cooler 200c1, the second cooler 200c2, the third cooler 200c3 and the fourth cooler 200c4. By repeating this process, the power semiconductor package 110 is continuously cooled.

[0415] The above is a diagram and description of a specific embodiment of the present invention. However, the present invention can be implemented in various forms without departing from the scope of its concept or essential characteristics, and therefore, the above-described embodiment should not be limited to the specific content used to implement its invention.

[0416] In addition, even embodiments not listed in the above detailed description should be interpreted broadly within the scope of the technical concept defined in the appended claims. In addition, all changes and modifications included in the technical scope of the claims and their equivalents should be included in the appended claims.

Claims

1. A double-sided cooling power semiconductor package, wherein: include: Power semiconductor packages in plate form; A plurality of coolers, each of which is provided with a flow path for a cooling fluid, and the two side surfaces of the power semiconductor package are respectively configured to enable heat exchange; as well as A connecting member having a flow path for the cooling fluid disposed therein and being communicatively connected to the plurality of coolers; The connecting member is formed to be retractable.

2. The double-sided cooling type power semiconductor package according to claim 1, wherein: The connection member has a bellows shape.

3. The double-sided cooling type power semiconductor package according to claim 1, wherein: The connection member is configured to be expandable and contractible along a thickness direction of the power semiconductor package.

4. The double-sided cooling type power semiconductor package according to claim 1, wherein: The connection member is formed to be able to expand and contract along a board direction of the power semiconductor package.

5. The double-sided cooling type power semiconductor package according to claim 1, wherein: Each of the plurality of coolers has: an inner plate in contact with the power semiconductor; an outer plate, spaced apart from the inner plate; and A partition plate is connected to the inner plate on one side and connected to the outer plate on the other side.

6. The double-sided cooling type power semiconductor package according to claim 1, wherein: Each of the plurality of coolers has: An inner plate in contact with the power semiconductor package; an outer plate, spaced apart from the inner plate; and A heat sink has one side connected to the inner plate and the other side connected to the outer plate.

7. The double-sided cooling type power semiconductor package according to claim 6, wherein: The plurality of coolers have: An upper cooler, disposed on the upper side of the power semiconductor package; as well as A lower cooler, disposed on the lower side of the power semiconductor package; The connecting members are respectively provided at inflow side ends of the lower cooler and the upper cooler and at outflow side ends of the lower cooler and the upper cooler based on the flow direction of the cooling fluid.

8. The double-sided cooling type power semiconductor package according to claim 7, wherein: The cooler further includes a header disposed at an inlet side end portion and an outlet side end portion of the lower cooler, and an inlet side end portion and an outlet side end portion of the upper cooler, respectively. The connection member is vertically disposed between the header of the upper cooler and the header of the lower cooler to be communicably connected to the header of the upper cooler and the header of the lower cooler.

9. The double-sided cooling type power semiconductor package according to claim 8, wherein: The head portion is provided with a connection member combining portion, and the connection member is combined with the connection member in an overlapping manner along a thickness direction of the power semiconductor package.

10. The double-sided cooling type power semiconductor package according to claim 9, wherein: The connection member coupling portion has a recessed portion recessed in a thickness direction so as to accommodate an end portion of the connection member.

11. The double-sided cooling type power semiconductor package according to claim 10, wherein: The inner width of the recessed portion is greater than the maximum outer width of the connecting member.

12. The double-sided cooling type power semiconductor package according to claim 11, wherein: The connecting member coupling portion has an overlapping section protruding from the recessed portion, and the overlapping section overlaps with an end portion of the connecting member along a length direction.

13. The double-sided cooling type power semiconductor package according to claim 12, wherein: The length of the overlapping section is smaller than the depth of the recessed portion.

14. The double-sided cooling type power semiconductor package according to claim 7, wherein: The inner plate, the outer plate and the heat sink are formed of metal components. The inner plate, the outer plate, and the heat sink are bonded together by brazing.

15. The double-sided cooling type power semiconductor package according to claim 7, wherein: The power semiconductor package includes a first power semiconductor package, a second power semiconductor package and a third power semiconductor package separated along the board surface direction. The upper cooler includes a first upper cooler disposed on an upper side of the first power semiconductor package, a second upper cooler disposed on an upper side of the second power semiconductor package, and a third upper cooler disposed on an upper side of the third power semiconductor package. The lower cooler includes a first lower cooler disposed at a lower side of the first power semiconductor package, a second lower cooler disposed at a lower side of the second power semiconductor package, and a third lower cooler disposed at a lower side of the third power semiconductor package.

16. The double-sided cooling type power semiconductor package according to claim 15, wherein: The connecting member comprises: an upper horizontal connecting member connecting the first upper cooler, the second upper cooler and the third upper cooler in a horizontal direction; and The lower horizontal connecting member connects the first lower cooler, the second lower cooler and the third lower cooler in a horizontal direction.

17. The double-sided cooling type power semiconductor package according to claim 6, wherein: The power semiconductor package includes a first power semiconductor package, a second power semiconductor package and a third power semiconductor package which are arranged separately along the thickness direction. The cooler includes a first cooler disposed on a lower side of the first power semiconductor package, a second cooler disposed on an upper side of the first power semiconductor package, a third cooler disposed on an upper side of the second power semiconductor package, and a fourth cooler disposed on an upper side of the third power semiconductor package. The inlet side ends of the first cooler, the second cooler, the third cooler, and the fourth cooler are connected to each other by the connection member so as to be communicable. Outflow-side ends of the first cooler, the second cooler, the third cooler, and the fourth cooler are connected to each other by the connection member so as to be communicable.

18. The double-sided cooling type power semiconductor package according to claim 17, wherein: Based on the moving direction of the cooling fluid, a first head is respectively provided at the inlet side end and the outlet side end of the first cooler, a second head is respectively provided at the inlet side end and the outlet side end of the second cooler, a third head is respectively provided at the inlet side end and the outlet side end of the third cooler, and a fourth head is respectively provided at the inlet side end and the outlet side end of the fourth cooler. The connection member includes a first vertical connection member, a second vertical connection member, and a third vertical connection member disposed in a vertical direction between the first head, the second head, the third head, and the fourth head which are spaced apart from each other in an up-and-down direction.

19. The double-sided cooling type power semiconductor package according to any one of claims 1 to 18, wherein: Also included is a heat conductive material inserted between the contact surface of the power semiconductor package and the cooler.

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