Phase shifter and antenna

Abstract

The invention provides a phase shifter and an antenna, and belongs to the technical field of communication. The phase shifter comprises a first dielectric substrate and a second dielectric substrate which are oppositely arranged, an adjustable dielectric layer arranged between the first dielectric substrate and the second dielectric substrate, a first electrode layer arranged on the side, close to the adjustable dielectric layer, of the first dielectric substrate, and a second electrode layer arranged on the side, close to the adjustable dielectric layer, of the second dielectric substrate, the second electrode layer is arranged on the side, close to the adjustable dielectric layer, of the second dielectric substrate, and the third electrode layer is located on the side, away from the adjustable dielectric layer, of the first dielectric substrate; one of the first electrode layer and the second electrode layer comprises a signal electrode for transmitting electromagnetic waves; the third electrode layer is provided with a first opening, and the orthographic projection of the first opening and the orthographic projection of the signal electrode on the first dielectric substrate are partially overlapped.

Description

Phase shifter and antenna Technical Field

[0001] The present disclosure belongs to the field of communication technology, and particularly relates to a phase shifter and an antenna. Background Art

[0002] Phased array antennas are antennas that change their radiation pattern by controlling the feed phase of the array's radiating elements. By controlling the phase, the direction of the antenna's maximum radiation pattern is altered, achieving beam scanning. Due to their beam scanning properties, phased array antennas are widely used in fields such as communications and detection.

[0003] Phased array antenna architectures are categorized as active and passive. Current liquid crystal-based phased array antennas are essentially typical passive phased arrays, offering high maturity, low cost, and low power consumption. Liquid crystal phased array antennas utilize the dielectric anisotropy of liquid crystals to provide deflection voltages to the upper and lower layers of the liquid crystal layer via transmission lines. Controlling the liquid crystal deflection direction alters the phase shift of the phase shifter, thereby adjusting the phase array antenna's beam direction.

[0004] Phase shifters used in liquid crystal phased array antennas fall into two main categories: the first uses liquid crystal as the primary transmission line dielectric, directly altering the phase constant and velocity of electromagnetic waves traveling along the transmission line by manipulating the liquid crystal's dielectric constant, achieving phase shifting. The second uses liquid crystal capacitors as variable capacitive loads in the trunk and branches of the transmission line. By creating appropriate capacitor-inductor resonances, they amplify the effect of the liquid crystal's dielectric constant on the phase constant, achieving narrowband phase shifting. Compared to the first type of liquid crystal phase shifters, the second type generally offers advantages such as large phase shift per unit area, independence from high cell thickness, and high energy efficiency. However, their principle also carries disadvantages such as narrower bandwidth, slightly poorer linearity, and low impedance due to resonant branch loading. The second type of liquid crystal phase shifter generally prevails when impedance-to-bandwidth requirements are ≤15%-18%. However, for wider bandwidths, the introduction of impedance matching sections makes broadband performance virtually impossible, due to the strong capacitive design of the resonant branches within the operating frequency band and the low impedance of the device's main body.

[0005] The broadband idea of ​​the second type of liquid crystal phase shifter is usually to increase the impedance after resonant loading, that is, to increase the equivalent inductance of the phase shifter trunk and reduce the equivalent capacitance of the branch. For liquid crystal phase shifters that achieve phase shifting based on branch capacitance regulation, reducing the equivalent capacitance of the branch is obviously inconsistent with increasing the device quality factor (phase shift / insertion loss, hereinafter referred to as FOM). Both qualitative and quantitative analysis have proved that reducing the capacitance of the branch has a greater impact on FOM than increasing the trunk inductance (thinner trunk line width). Here is a qualitative explanation: Considering that both methods are broadband matched to Z0, the trunk inductance L 干The increase only affects the ohmic loss on the trunk line (which accounts for a very low proportion in the overall insertion loss), while the phase shift is directly related to the branch capacitance C 支 The two changes are respectively reflected as a local increase in insertion loss and a global decrease in phase shift. Considering the relationship between the two and the impedance is phase shifter impedance (analog filter Bloch impedance) Z0 = sqrt(L 干 / C 支 ), we can see that the results of L being doubled and C being reduced to 1 / 2 are consistent. Obviously, the impact of a multiplier increase in insertion loss on FOM is still not comparable to the doubling of the phase shift.

[0006] In the broadband path of increasing the capacitance of the trunk line, problems may arise, such as the trunk line being too narrow, for example, reaching a width of less than 100um, and insufficient process tolerance. At the same time, in actual engineering applications, even if the impact of fine line ohmic loss is smaller than the impact of reduced branch capacitance, it still has a real impact on the competitiveness of product design.

[0007] Summary of the Invention

[0008] The present invention aims to solve at least one of the technical problems existing in the prior art and provides a phase shifter and an antenna.

[0009] In a first aspect, an embodiment of the present disclosure provides a phase shifter comprising a first dielectric substrate and a second dielectric substrate disposed opposite to each other, an adjustable dielectric layer disposed between the first dielectric substrate and the second dielectric substrate, a first electrode layer disposed on a side of the first dielectric substrate close to the adjustable dielectric layer, a second electrode layer disposed on a side of the second dielectric substrate close to the adjustable dielectric layer, and a third electrode layer located on a side of the first dielectric substrate away from the adjustable dielectric layer; wherein:

[0010] One of the first electrode layer and the second electrode layer includes a signal electrode for transmitting electromagnetic waves;

[0011] The third electrode layer has a first opening, and the first opening partially overlaps with the orthographic projection of the signal electrode on the first dielectric substrate.

[0012] When the first electrode layer includes a signal electrode, the second electrode layer includes: a first reference electrode and a second reference electrode; the first electrode layer also includes: at least one first branch and at least one second branch respectively connected to both sides of the extension direction of the signal electrode; the orthographic projection of the signal electrode on the first dielectric substrate is located between the orthographic projections of the first reference electrode and the second reference electrode on the first dielectric substrate; the first branch at least partially overlaps with the orthographic projection of the first reference electrode on the first dielectric substrate; and the orthographic projection of the second branch on the first dielectric substrate at least partially overlaps.

[0013] When the second electrode layer includes a signal electrode, the first electrode layer includes: a first reference electrode and a second reference electrode; the second electrode layer also includes: at least one first branch and at least one second branch respectively connected to both sides of the extension direction of the signal electrode; the orthographic projection of the signal electrode on the first dielectric substrate is located between the orthographic projections of the first reference electrode and the second reference electrode on the first dielectric substrate; the first branch at least partially overlaps with the orthographic projection of the first reference electrode on the first dielectric substrate; and the orthographic projection of the second branch on the first dielectric substrate at least partially overlaps.

[0014] The first branch includes a first portion and a second portion, the second portion overlaps with the orthographic projection of the first reference electrode on the first dielectric substrate; the third electrode layer further has a second opening, the first portion overlaps with the orthographic projection of the second opening on the first dielectric substrate; and / or,

[0015] The second branch includes a third portion and a fourth portion, the fourth portion overlaps with the orthographic projection of the second reference electrode on the first dielectric substrate; the third electrode layer further has a third opening, and the third portion overlaps with the orthographic projection of the third opening on the first dielectric substrate.

[0016] When the third electrode layer has the second opening, the second opening is connected to the first opening; when the third electrode layer has the third opening, the third opening is connected to the first opening.

[0017] In which, when the third electrode layer has the second opening, the midline of the first part along its extension direction coincides with the midline of the second opening along its extension direction; when the third electrode layer has the third opening, the midline of the third part along its extension direction coincides with the midline of the third opening along its extension direction.

[0018] The midline of the signal electrode along its extending direction coincides with the midline of the first opening along its extending direction.

[0019] There are multiple first branches and multiple second branches, and the first branches and the second branches are arranged in a one-to-one correspondence.

[0020] The first reference electrode and the second reference electrode are both configured to be loaded with the same voltage as the third electrode layer.

[0021] When the first electrode layer includes a signal electrode, the second electrode layer includes a plurality of patch electrodes arranged side by side along an extension direction of the signal electrode, and each patch electrode overlaps with an orthographic projection of the signal electrode on the first dielectric substrate.

[0022] The midline of the signal electrode along its extending direction coincides with the midline of the first opening along its extending direction.

[0023] When the first electrode layer includes a signal electrode, the second electrode layer includes a plurality of patch electrodes arranged side by side along an extension direction of the signal electrode; the signal electrode includes a first sub-signal electrode and a second sub-signal electrode arranged side by side, and both ends of each patch electrode overlap with the orthographic projections of the first sub-signal electrode and the second sub-signal electrode on the first dielectric substrate, respectively.

[0024] The first opening includes a first sub-opening and a second sub-opening. The first sub-signal electrode overlaps with an orthographic projection of the first sub-opening on the first dielectric substrate. The second sub-signal electrode overlaps with an orthographic projection of the second sub-opening on the first dielectric substrate.

[0025] The midline of the first sub-signal electrode along its extension direction coincides with the midline of the first sub-opening along its extension direction, and / or the midline of the second sub-signal electrode along its extension direction coincides with the midline of the second sub-opening along its extension direction.

[0026] Wherein, the thickness of the adjustable dielectric layer is not less than 1 / 10 μm.

[0027] The first conductive layer and the second conductive layer are made of at least one of molybdenum, aluminum and copper.

[0028] Wherein, the material of the third conductive layer includes at least one of copper, silver and gold.

[0029] Wherein, the material of the adjustable dielectric layer includes liquid crystal molecules.

[0030] In a second aspect, an embodiment of the present disclosure provides an antenna comprising any of the above-mentioned phase shifters.

[0031] The antenna further includes a radiation unit, and the phase shifter is electrically connected to the radiation unit.

[0032] The antenna further includes a feeding unit, and the feeding unit is electrically connected to the radiation unit through the phase shifting unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] FIG1 is a top view of a first exemplary phase shifter according to an embodiment of the present disclosure.

[0034] FIG. 2 is a cross-sectional view taken along line AA′ in FIG. 1 .

[0035] FIG3 is a top view of a third electrode layer of a first exemplary phase shifter according to an embodiment of the present disclosure.

[0036] FIG4 is a top view of a second exemplary phase shifter according to an embodiment of the present disclosure.

[0037] FIG. 5 is a cross-sectional view taken along line BB′ in FIG. 4 .

[0038] FIG6 is a top view of a third exemplary phase shifter according to an embodiment of the present disclosure.

[0039] FIG7 is a cross-sectional view taken along line CC′ in FIG6 .

[0040] FIG8 is a top view of a third electrode layer of a phase shifter according to a third example of an embodiment of the present disclosure.

[0041] FIG9 is a top view of a fourth exemplary phase shifter according to an embodiment of the present disclosure.

[0042] FIG10 is a cross-sectional view taken along line DD′ in FIG9 .

[0043] FIG11 is a top view of a fifth exemplary phase shifter according to an embodiment of the present disclosure.

[0044] FIG12 is a cross-sectional view taken along line EE′ in FIG11 .

[0045] FIG13 is a top view of the third electrode layer of the phase shifter according to the fifth example of the embodiment of the present disclosure. DETAILED DESCRIPTION

[0046] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0047] Unless otherwise defined, the technical or scientific terms used in this disclosure should have the usual meanings understood by people with ordinary skills in the field to which this disclosure belongs. The words "first", "second" and similar words used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one", "an" or "the" do not indicate a quantity limitation, but rather indicate the existence of at least one. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0048] Before introducing the phase shifter of the presently disclosed embodiments, it should be noted that the presently disclosed embodiments utilize a liquid crystal phase shifter as an example. Specifically, the material of the adjustable dielectric layer in the phase shifter includes liquid crystal molecules or a composite material containing liquid crystal molecules. The adjustable dielectric layer will be referred to as the liquid crystal layer hereinafter. However, it should be understood that the material of the adjustable dielectric layer is not limited to liquid crystal molecules or composite materials containing liquid crystal molecules. Any medium whose dielectric constant can be altered under the influence of an electric field is within the scope of protection of the presently disclosed embodiments.

[0049] In a first aspect, embodiments of the present disclosure provide a phase shifter comprising a first dielectric substrate, a second dielectric substrate, a liquid crystal layer, a first electrode layer, a second electrode layer, and a third electrode layer. The first and second dielectric substrates are disposed opposite each other, with the liquid crystal layer located between the first and second dielectric substrates. The first electrode layer is disposed on the side of the first dielectric substrate closest to the liquid crystal layer, the second electrode layer is disposed on the side of the second dielectric substrate closest to the liquid crystal layer, and the third electrode layer is disposed on the side of the first dielectric substrate facing away from the liquid crystal layer. The liquid crystal layer is disposed at least in the overlapping region of the first and second electrode layers. Thus, by applying a bias voltage to the first and second electrode layers, an electric field is generated in the overlapping region, thereby changing the dielectric constant of the liquid crystal layer and, consequently, the phase of the transmitted electromagnetic wave.

[0050] In particular, in the embodiment of the present disclosure, one of the first electrode layer and the second electrode layer includes a signal electrode for transmitting electromagnetic waves, that is, a main line, and a first opening is correspondingly formed in the third conductive layer, and the signal electrode partially overlaps with the orthographic projection of the first opening on the first dielectric substrate.

[0051] It should be noted that the third electrode layer may be a radio frequency ground layer, i.e., the voltage applied to the third electrode layer is the ground voltage. However, it should be understood that the voltage applied to the third electrode layer may also be other reference voltages, as long as it can form a current loop with the first and second electrode layers.

[0052] In the embodiment of the present disclosure, since the signal electrode partially overlaps with the orthographic projection of the first opening on the first dielectric substrate, the capacitance from the signal electrode to the third electrode layer can be reduced, the inductance can be enhanced, and the impedance of the phase shifter can be increased, thereby achieving broadband phase shifter.

[0053] In the embodiment of the present disclosure, the signal electrode may be disposed in the first electrode layer or in the second electrode layer. To make the structure of the phase shifter of the embodiment of the present disclosure clearer, it is described below with reference to specific examples.

[0054] First Example: Figure 1 is a top view of a phase shifter according to the first example of the present disclosure; Figure 2 is a cross-sectional view taken along line AA' of Figure 1; and Figure 3 is a top view of the third electrode layer 12 of the phase shifter according to the first example of the present disclosure. As shown in Figures 1-3, the phase shifter includes a first dielectric substrate 10, a second dielectric substrate 20, a liquid crystal layer 30, a first electrode layer 11, a second electrode layer 21, and a third electrode layer 12. The first and second dielectric substrates 10 and 20 are disposed opposite each other, with the liquid crystal layer 30 located between them. The first electrode layer 11 is disposed on the side of the first dielectric substrate 10 proximal to the liquid crystal layer 30, the second electrode layer 21 is disposed on the side of the second dielectric substrate 20 proximal to the liquid crystal layer 30, and the third electrode layer 12 is disposed on the side of the first dielectric substrate 10 facing away from the liquid crystal layer 30. The liquid crystal layer 30 is disposed at least in the overlapping region of the first and second electrode layers 11 and 21. The first electrode layer 11 of the phase shifter includes a first reference electrode 111 and a second reference electrode 112. The second electrode layer 21 includes a signal electrode 211, and first and second branches 212 and 213 connected to either side of the signal electrode 211. The orthographic projection of the signal electrode 211 on the first dielectric substrate 10 is located between the orthographic projections of the first and second reference electrodes 111 and 112. The first branch 212 at least partially overlaps with the orthographic projection of the first reference electrode 111 on the first dielectric substrate 10, and the second branch 213 at least partially overlaps with the orthographic projection of the second reference electrode 112 on the first dielectric substrate 10. The signal electrode 211 serves as the main line of the first electrode layer 11, transmitting electromagnetic waves. The first and second branches 212 and 213 serve as branches of the first electrode layer 11, forming overlapping capacitances with the first and second reference electrodes 111 and 112, respectively, to shift the phase of the electromagnetic waves transmitted by the main line.

[0055] In this example, a first opening 121 is formed in the third electrode layer 12. The first opening 121 partially overlaps with the orthographic projection of the signal electrode 211 on the first dielectric substrate 10. For example, the first opening 121 is a rectangular slot, where the midline of the first opening 121 along its extension coincides with the midline of the signal electrode 211 along its extension. The signal electrode 211 acts as a main line, which reduces the capacitance from the main line to the third electrode layer 12, enhances the inductance, and increases the impedance of the phase shifter, thereby achieving broadband phase shifter performance.

[0056] Of course, the shape of the first opening 121 may also be a non-rectangular groove, and the shape of the first opening 121 is not limited in the embodiment of the present disclosure.

[0057] In some examples, the first reference electrode 111 and the second reference electrode 112 in the first electrode layer 11 can be ground electrodes. In this case, the first reference electrode 111 and the second reference electrode 112 can be electrically connected to the third electrode layer 12. This configuration reduces wiring and facilitates control. Specifically, the first reference electrode 111 and the second reference electrode 112 in the first electrode layer 11 can be electrically connected to the third electrode layer 12 through a via extending through the first dielectric substrate 10.

[0058] In some examples, the second electrode layer 21 includes multiple first branches 212 and multiple second branches 213, with each first branch 212 corresponding to each second branch 213. In the disclosed embodiment, the first branches 212 can be periodically arranged and electrically connected to the signal electrode 211. Similarly, the second branches 213 can also be periodically arranged and electrically connected to the signal electrode 211.

[0059] In some examples, the first electrode layer 11 and the second electrode layer 21 can each be a single layer formed of any one of molybdenum, aluminum, and copper, or a composite layer formed of several of these materials. The first electrode layer 11 can be formed on the second dielectric substrate 20 by electroplating or sputtering. The second electrode layer 21 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0060] In some examples, the third electrode layer 12 can be a single layer formed of any one of copper, silver, and gold, or a composite layer formed of several of these materials. The third electrode layer 12 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0061] Second Example: Figure 4 is a top view of a phase shifter according to a second example of the present disclosure; Figure 5 is a cross-sectional view taken along line BB' in Figure 4 . As shown in Figures 4 and 5 , the phase shifter in this example is substantially identical to the first example, differing only in that, in this example, the first electrode layer 11 includes a signal electrode 211, connected to first and second branches 212 and 213, respectively, on either side of the signal electrode 211. The second electrode layer 21 includes a first reference electrode 111 and a second reference electrode 112. The orthographic projection of the signal electrode 211 on the first dielectric substrate 10 is located between the orthographic projections of the first and second reference electrodes 111 and 112. The first branch 212 at least partially overlaps with the orthographic projection of the first reference electrode 111 on the first dielectric substrate 10, and the second branch 213 at least partially overlaps with the orthographic projection of the second reference electrode 112 on the first dielectric substrate 10. Among them, the signal electrode 211 serves as the main line of the first electrode layer 11 for transmitting electromagnetic waves, and the first branch 212 and the second branch 213 serve as branches of the first electrode layer 11 to form overlapping capacitances with the first reference electrode 111 and the second reference electrode 112 respectively, for phase shifting the electromagnetic waves transmitted by the main line.

[0062] In this example, a first opening 121 is formed in the third electrode layer 12. The first opening 121 partially overlaps with the orthographic projection of the signal electrode 211 on the first dielectric substrate 10. For example, the first opening 121 is a rectangular slot, where the midline of the first opening 121 along its extension coincides with the midline of the signal electrode 211 along its extension. The signal electrode 211 acts as a main line, which reduces the capacitance from the main line to the third electrode layer 12, enhances the inductance, and increases the impedance of the phase shifter, thereby achieving broadband phase shifter performance.

[0063] Of course, the shape of the first opening 121 may also be a non-rectangular groove, and the shape of the first opening 121 is not limited in the embodiment of the present disclosure.

[0064] In some examples, the first reference electrode 111 and the second reference electrode 112 in the second electrode layer 21 can be ground electrodes. In this case, the first reference electrode 111 and the second reference electrode 112 can be electrically connected to the third electrode layer 12. This configuration reduces wiring and facilitates control. Specifically, the first reference electrode 111 and the second reference electrode 112 in the second electrode layer 21 can be electrically connected to the transfer electrode on the first dielectric substrate 10 via a conductive gold ball. In this case, the transfer electrode is electrically connected to the third electrode layer 12 via a via hole that penetrates the first dielectric substrate 10.

[0065] In some examples, the first electrode layer 11 includes multiple first branches 212 and multiple second branches 213, each of which corresponds to the first branch 212 and the second branch 213. In the disclosed embodiment, the first branches 212 can be periodically arranged and electrically connected to the signal electrode 211. Similarly, the second branches 213 can also be periodically arranged and electrically connected to the signal electrode 211.

[0066] In some examples, the first electrode layer 11 and the second electrode layer 21 can each be a single layer formed of any one of molybdenum, aluminum, and copper, or a composite layer formed of several of these materials. The first electrode layer 11 can be formed on the first dielectric substrate 10 by electroplating or sputtering. The second electrode layer 21 can be formed on the second dielectric substrate 20 by electroplating or sputtering.

[0067] In some examples, the third electrode layer 12 can be a single layer formed of any one of copper, silver, and gold, or a composite layer formed of several of these materials. The third electrode layer 12 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0068] Third Example: Figure 6 is a top view of a phase shifter according to the third example of the present disclosure; Figure 7 is a cross-sectional view taken along line CC' of Figure 6; and Figure 8 is a top view of the third electrode layer 12 of the phase shifter according to the third example of the present disclosure. As shown in Figures 6-8 , the structure of this phase shifter is substantially the same as that of the first and second examples. In this example, the second electrode layer 21 includes a signal electrode 211, a first branch 212, and a second branch 213, and the first electrode layer 11 includes a first reference electrode 111 and a second reference electrode 112. The orthographic projection of the signal electrode 211 on the first dielectric substrate 10 is located between the orthographic projections of the first reference electrode 111 and the second reference electrode 112 on the first dielectric substrate 10. The first branch 212 at least partially overlaps with the orthographic projection of the first reference electrode 111 on the first dielectric substrate 10, and the second branch 213 at least partially overlaps with the orthographic projection of the second reference electrode 112 on the first dielectric substrate 10. Among them, the signal electrode 211 serves as the main line of the first electrode layer 11 for transmitting electromagnetic waves, and the first branch 212 and the second branch 213 serve as branches of the first electrode layer 11 to form overlapping capacitances with the first reference electrode 111 and the second reference electrode 112 respectively, for phase shifting the electromagnetic waves transmitted by the main line.

[0069] In this example, the first branch 212 includes a first portion and a second portion, the second portion overlapping the orthographic projection of the first reference electrode 111 on the first dielectric substrate 10. The second branch 213 includes a third portion and a fourth portion, the fourth portion overlapping the orthographic projection of the second reference electrode 112 on the first dielectric substrate 10. The third electrode layer 12 has a first opening 121, a second opening 122, and a third opening 123. The first opening 121 partially overlaps the orthographic projection of the signal electrode 211 on the first dielectric substrate 10. The second opening 122 is provided in a one-to-one correspondence with the first portion of the first branch 212, and the corresponding second opening 122 partially overlaps the orthographic projection of the first portion of the first branch 212 on the first dielectric substrate 10. The third opening 123 is provided in a one-to-one correspondence with the third portion of the second branch 213, and the corresponding third opening 123 partially overlaps the orthographic projection of the third portion of the second branch 213 on the first dielectric substrate 10.

[0070] In this example, the signal electrode 211 serves as the main line, and the first branch 212 and the second branch 213 serve as branches. At this time, not only the capacitance from the main line to the third electrode layer 12 can be weakened, but also the capacitance from the first branch 212 and the second branch 213 to the third electrode layer 12 can be weakened, the inductance is enhanced, and the impedance of the phase shifter is increased, thereby achieving broadband of the phase shifter.

[0071] In some examples, the second opening 122 and the third opening 123 are both connected to the first opening 121. The first opening 121 partially overlaps with the orthographic projection of the signal electrode 211 on the first dielectric substrate 10. For example, if the first opening 121, the second opening 122, and the third opening 123 are all rectangular slots, the centerline of the first opening 121 along its extension direction coincides with the centerline of the signal electrode 211 along its extension direction. Similarly, the centerline of the corresponding second opening 122 along its extension direction coincides with the orthographic projection of the centerline of the first branch 212 along its extension direction on the first dielectric substrate 10, and the centerline of the corresponding third opening 123 along its extension direction coincides with the orthographic projection of the centerline of the second branch 213 along its extension direction on the first dielectric substrate 10.

[0072] Of course, the shapes of the first opening 121 , the second opening 122 and the third opening 123 may also be non-rectangular grooves, and the shape of the first opening 121 is not limited in the embodiment of the present disclosure.

[0073] In some examples, the first reference electrode 111 and the second reference electrode 112 in the first electrode layer 11 can be ground electrodes. In this case, the first reference electrode 111 and the second reference electrode 112 can be electrically connected to the third electrode layer 12. This configuration reduces wiring and facilitates control. Specifically, the first reference electrode 111 and the second reference electrode 112 in the first electrode layer 11 can be electrically connected to the third electrode layer 12 through a via extending through the first dielectric substrate 10.

[0074] In some examples, the second electrode layer 21 includes multiple first branches 212 and multiple second branches 213, with each first branch 212 corresponding to each second branch 213. In the disclosed embodiment, the first branches 212 can be periodically arranged and electrically connected to the signal electrode 211. Similarly, the second branches 213 can also be periodically arranged and electrically connected to the signal electrode 211.

[0075] In some examples, the first electrode layer 11 and the second electrode layer 21 can each be a single layer formed of any one of molybdenum, aluminum, and copper, or a composite layer formed of several of these materials. The first electrode layer 11 can be formed on the second dielectric substrate 20 by electroplating or sputtering. The second electrode layer 21 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0076] In some examples, the third electrode layer 12 can be a single layer formed of any one of copper, silver, and gold, or a composite layer formed of several of these materials. The third electrode layer 12 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0077] FIG9 is a top view of a phase shifter according to the fourth example of the present disclosure; FIG10 is a cross-sectional view taken along line DD′ of FIG9 . As shown in FIG9 and FIG10 , the phase shifter in this example includes a first dielectric substrate 10, a second dielectric substrate 20, a liquid crystal layer 30, a first electrode layer 11, a second electrode layer 21, and a third electrode layer 12. The first and second dielectric substrates 10 and 20 are disposed opposite each other, with the liquid crystal layer 30 located between them. The first electrode layer 11 is disposed on the side of the first dielectric substrate 10 proximal to the liquid crystal layer 30, the second electrode layer 21 is disposed on the side of the second dielectric substrate 20 proximal to the liquid crystal layer 30, and the third electrode layer 12 is disposed on the side of the first dielectric substrate 10 facing away from the liquid crystal layer 30. The liquid crystal layer 30 is disposed at least in the overlapping region of the first and second electrode layers 11 and 21. The first electrode layer 11 of the phase shifter includes a signal electrode 211, and the second electrode layer 21 includes a plurality of patch electrodes 214 arranged side by side along the extension direction of the signal electrode 211. Each patch electrode 214 overlaps with the orthographic projection of the signal electrode 211 on the first dielectric substrate 10, forming an overlapping capacitor that is used to phase shift the electromagnetic wave transmitted by the signal electrode 211. The third electrode layer 12 includes a first opening 121, which partially overlaps with the orthographic projection of the signal electrode 211 on the first dielectric substrate 10. For example, the first opening 121 is a rectangular slot, where the midline of the first opening 121 along its extension direction coincides with the midline of the signal electrode 211 along its extension direction. The signal electrode 211 acts as a main line, which reduces the capacitance from the main line to the third electrode layer 12, strengthens the inductance, and increases the impedance of the phase shifter, thereby achieving broadband phase shifter.

[0078] Of course, the shape of the first opening 121 may also be a non-rectangular groove, and the shape of the first opening 121 is not limited in the embodiment of the present disclosure.

[0079] In some examples, each patch electrode 214 can be electrically connected to a bias voltage line, which can reduce wiring and facilitate control. Of course, each patch electrode 214 can also be connected to an independent bias voltage line to achieve individual control of the patch electrodes 214.

[0080] In some examples, the first electrode layer 11 and the second electrode layer 21 can each be a single layer formed of any one of molybdenum, aluminum, and copper, or a composite layer formed of several of these materials. The first electrode layer 11 can be formed on the second dielectric substrate 20 by electroplating or sputtering. The second electrode layer 21 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0081] In some examples, the third electrode layer 12 can be a single layer formed of any one of copper, silver, and gold, or a composite layer formed of several of these materials. The third electrode layer 12 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0082] Fifth Example: Figure 11 is a top view of a phase shifter according to the fifth example of the embodiment of the present disclosure; Figure 12 is a cross-sectional view taken along line EE' of Figure 11; and Figure 13 is a top view of the third electrode layer 12 of the phase shifter according to the fifth example of the embodiment of the present disclosure. As shown in Figures 11-13, in this example, the phase shifter includes a first dielectric substrate 10, a second dielectric substrate 20, a liquid crystal layer 30, a first electrode layer 11, a second electrode layer 21, and a third electrode layer 12. The first and second dielectric substrates 10 and 20 are disposed opposite each other, with the liquid crystal layer 30 located between them. The first electrode layer 11 is disposed on the side of the first dielectric substrate 10 proximal to the liquid crystal layer 30, the second electrode layer 21 is disposed on the side of the second dielectric substrate 20 proximal to the liquid crystal layer 30, and the third electrode layer 12 is disposed on the side of the first dielectric substrate 10 facing away from the liquid crystal layer 30. The liquid crystal layer 30 is disposed at least in the overlapping region of the first and second electrode layers 11 and 21. The first electrode layer 11 includes a signal electrode 211, which includes a first sub-signal electrode 2111 and a second sub-signal electrode 2112 arranged side by side. The second electrode layer 21 includes a plurality of patch electrodes 214 arranged side by side along the extension direction of the first sub-signal electrode 2111. The two ends of each patch electrode 214 overlap with the orthographic projections of the first sub-signal electrode 2111 and the second sub-signal electrode 2112 on the first dielectric substrate 10, respectively, to form an overlap capacitance for phase shifting the transmitted electromagnetic wave.

[0083] In this example, the third electrode layer 12 has a first opening 121, which includes a first sub-opening 1211 and a second sub-opening 1212. The first sub-opening 1211 and the second sub-opening 1212 are rectangular slots. The first sub-signal electrode 2111 overlaps with the orthographic projection of the first sub-opening 1211 onto the first dielectric substrate 10; the second sub-signal electrode 2112 overlaps with the orthographic projection of the second sub-opening 1212 onto the first dielectric substrate 10. This reduces the capacitance formed between the first sub-signal electrode 2111 and the third electrode layer 12, as well as the capacitance formed between the second sub-signal electrode 2112 and the third electrode layer 12. This strengthens the inductance and increases the impedance of the phase shifter, thereby achieving broadband phase shifter performance.

[0084] In some examples, the midline of the first sub-opening 1211 along its extension direction coincides with the orthographic projection of the midline of the first sub-signal electrode 2111 along its extension direction on the first dielectric substrate 10. The midline of the second sub-opening 1212 along its extension direction coincides with the orthographic projection of the midline of the second sub-signal electrode 2112 along its extension direction on the first dielectric substrate 10.

[0085] In some examples, the first electrode layer 11 and the second electrode layer 21 can each be a single layer formed of any one of molybdenum, aluminum, and copper, or a composite layer formed of several of these materials. The first electrode layer 11 can be formed on the second dielectric substrate 20 by electroplating or sputtering. The second electrode layer 21 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0086] In some examples, the third electrode layer 12 can be a single layer formed of any one of copper, silver, and gold, or a composite layer formed of several of these materials. The third electrode layer 12 can be formed on the first dielectric substrate 10 by electroplating or sputtering.

[0087] In any of the above examples, the thickness of the liquid crystal layer 30 is not less than 1 / 10 micron. The first dielectric substrate 10 and the second dielectric substrate 20 both include but are not limited to glass, PCB and flexible film.

[0088] The phase shifter provided in the disclosed embodiments reduces the capacitance between the signal electrode 211 and the third electrode layer 12 by designing an opening therein, thereby enabling the phase shifter to achieve an impedance bandwidth exceeding 20% ​​to 30%. This also helps optimize the broadband phase shifter's Form of Material (FOM), reduces the risk of metal processing tolerances, and facilitates device miniaturization.

[0089] In a second aspect, embodiments of the present disclosure provide an antenna comprising the aforementioned phase shifter and a radiating element connected to the phase shifter. The antenna also includes a feed structure electrically connected to the radiating element via the phase shifter. The feed structure feeds electromagnetic waves into the phase shifter, which adjusts the phase of the electromagnetic waves, which are then radiated by the radiating element, thereby altering the radiation pattern.

[0090] The antenna also includes a transceiver unit, a radio frequency transceiver, a signal amplifier, a power amplifier, and a filtering unit. The antenna can be used as a transmitting antenna or a receiving antenna. The transceiver unit may include a baseband and a receiving end. The baseband provides a signal of at least one frequency band, such as a 2G signal, a 3G signal, a 4G signal, a 5G signal, etc., and sends a signal of at least one frequency band to the radio frequency transceiver. After the transparent antenna in the communication system receives the signal, it can be processed by the filtering unit, the power amplifier, the signal amplifier, and the radio frequency transceiver (not shown in the figure) and then transmitted to the receiving end in the transceiver unit. The receiving end may be, for example, a smart gateway.

[0091] Furthermore, a radio frequency transceiver is connected to the transceiver unit and is used to modulate the signals sent by the transceiver unit, or to demodulate the signals received by the transparent antenna and transmit them back to the transceiver unit. Specifically, the radio frequency transceiver may include a transmitting circuit, a receiving circuit, a modulation circuit, and a demodulation circuit. After the transmitting circuit receives various types of signals provided by the substrate, the modulation circuit can modulate the various types of signals provided by the baseband and then transmit them to the antenna. The transparent antenna receives the signal and transmits it to the receiving circuit of the radio frequency transceiver. The receiving circuit transmits the signal to the demodulation circuit, which demodulates the signal and transmits it to the receiving end.

[0092] Furthermore, the RF transceiver is connected to a signal amplifier and a power amplifier, which are then connected to a filtering unit, which is connected to at least one antenna. When the communication system transmits signals, the signal amplifier is used to increase the signal-to-noise ratio of the signal output by the RF transceiver before transmitting it to the filtering unit. The power amplifier is used to amplify the power of the signal output by the RF transceiver before transmitting it to the filtering unit. The filtering unit may specifically include a duplexer and a filtering circuit. The filtering unit combines the signals output by the signal amplifier and the power amplifier, filters out noise, and then transmits them to the transparent antenna, which radiates the signal. When the communication system receives signals, the antenna receives the signal and transmits it to the filtering unit. The filtering unit filters out noise from the signal received by the antenna and transmits it to the signal amplifier and power amplifier. The signal amplifier amplifies the signal received by the antenna to increase the signal-to-noise ratio. The power amplifier amplifies the power of the signal received by the antenna. The signal received by the antenna is processed by the power amplifier and the signal amplifier before being transmitted to the RF transceiver, which then transmits it to the transceiver unit.

[0093] In some examples, the signal amplifier may include various types of signal amplifiers, such as a low noise amplifier, which is not limited herein.

[0094] In some examples, the antenna provided by the embodiments of the present disclosure further includes a power management unit, which is connected to a power amplifier to provide the power amplifier with a voltage for amplifying a signal.

[0095] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A phase shifter, comprising a first dielectric substrate and a second dielectric substrate arranged opposite to each other, an adjustable dielectric layer arranged between the first dielectric substrate and the second dielectric substrate, a first electrode layer arranged on a side of the first dielectric substrate close to the adjustable dielectric layer, a second electrode layer arranged on a side of the second dielectric substrate close to the adjustable dielectric layer, and a third electrode layer located on a side of the first dielectric substrate away from the adjustable dielectric layer; wherein: One of the first electrode layer and the second electrode layer includes a signal electrode for transmitting electromagnetic waves; The third electrode layer has a first opening, and the first opening overlaps with the orthographic projection of the signal electrode on the first dielectric substrate.

2. The phase shifter according to claim 1, wherein: When the first electrode layer includes a signal electrode, the second electrode layer includes: a first reference electrode and a second reference electrode; the first electrode layer also includes: at least one first branch and at least one second branch respectively connected to both sides of the extension direction of the signal electrode; the orthographic projection of the signal electrode on the first dielectric substrate is located between the orthographic projections of the first reference electrode and the second reference electrode on the first dielectric substrate; the first branch at least partially overlaps with the orthographic projection of the first reference electrode on the first dielectric substrate; the orthographic projection of the second branch on the first dielectric substrate at least partially overlaps.

3. The phase shifter according to claim 1, wherein: When the second electrode layer includes a signal electrode, the first electrode layer includes: a first reference electrode and a second reference electrode; the second electrode layer also includes: at least one first branch and at least one second branch respectively connected to both sides of the extension direction of the signal electrode; the orthographic projection of the signal electrode on the first dielectric substrate is located between the orthographic projections of the first reference electrode and the second reference electrode on the first dielectric substrate; the first branch at least partially overlaps with the orthographic projection of the first reference electrode on the first dielectric substrate; the orthographic projection of the second branch on the first dielectric substrate at least partially overlaps.

4. The phase shifter according to claim 2 or 3, wherein: The first branch includes a first portion and a second portion, the second portion overlapping with an orthographic projection of the first reference electrode on the first dielectric substrate; The third electrode layer further has a second opening, and the first portion overlaps with the orthographic projection portion of the second opening on the first dielectric substrate; and / or, The second branch includes a third portion and a fourth portion, and the fourth portion overlaps with the orthographic projection of the second reference electrode on the first dielectric substrate; The third electrode layer further has a third opening, and the third portion overlaps with an orthographic projection of the third opening on the first dielectric substrate.

5. The phase shifter according to claim 4, wherein: When the third electrode layer has the second opening, the second opening is communicated with the first opening; when the third electrode layer has the third opening, the third opening is communicated with the first opening.

6. The phase shifter according to claim 4, wherein: When the third electrode layer has the second opening, the midline of the first portion along its extension direction coincides with the midline of the second opening along its extension direction; when the third electrode layer has the third opening, the midline of the third portion along its extension direction coincides with the midline of the third opening along its extension direction.

7. The phase shifter according to claim 2 or 3, wherein: A midline of the signal electrode along its extending direction coincides with a midline of the first opening along its extending direction.

8. The phase shifter according to claim 2 or 3, wherein: The number of the first branches and the number of the second branches are both plural, and the first branches and the second branches are arranged in a one-to-one correspondence.

9. The phase shifter according to claim 2 or 3, wherein: The first reference electrode and the second reference electrode are both configured to be loaded with the same voltage as the third electrode layer.

10. The phase shifter according to claim 1, wherein: When the first electrode layer includes a signal electrode, the second electrode layer includes a plurality of patch electrodes arranged side by side along an extending direction of the signal electrode, and each of the patch electrodes overlaps with an orthographic projection of the signal electrode on the first dielectric substrate.

11. The phase shifter according to claim 10, wherein: A midline of the signal electrode along its extending direction coincides with a midline of the first opening along its extending direction.

12. The phase shifter according to claim 1, wherein: When the first electrode layer includes a signal electrode, the second electrode layer includes a plurality of patch electrodes arranged side by side along the extension direction of the signal electrode; the signal electrode includes a first sub-signal electrode and a second sub-signal electrode arranged side by side, and two ends of each of the patch electrodes overlap with the orthographic projections of the first sub-signal electrode and the second sub-signal electrode on the first dielectric substrate respectively; The first opening includes a first sub-opening and a second sub-opening, the first sub-signal electrode overlaps with an orthographic projection of the first sub-opening on the first dielectric substrate; the second sub-signal electrode overlaps with an orthographic projection of the second sub-opening on the first dielectric substrate.

13. The phase shifter according to claim 12, wherein: The midline of the first signal sub-electrode along its extension direction coincides with the midline of the first sub-opening along its extension direction, and / or the midline of the second signal sub-electrode along its extension direction coincides with the midline of the second sub-opening along its extension direction.

14. The phase shifter according to claim 1, wherein: The thickness of the adjustable dielectric layer is not less than 1 / 10 μm.

15. The phase shifter according to claim 1, wherein: The material of the first conductive layer and the second conductive layer includes at least one of molybdenum, aluminum and copper.

16. The phase shifter according to claim 1, wherein: The material of the third conductive layer includes at least one of copper, silver and gold.

17. The phase shifter according to claim 1, wherein: The material of the adjustable dielectric layer includes liquid crystal molecules.

18. An antenna comprising the phase shifter according to any one of claims 1 to 17.

19. The antenna according to claim 18, wherein: A radiation unit is also included, and the phase shifter is electrically connected to the radiation unit.

20. The antenna according to claim 19, wherein: It also includes a feeding unit, and the feeding unit is electrically connected to the radiation unit through the phase shifting unit.

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