Single event effect simulation method and related product
The optical interface and material parameters are adjusted through the Optical Generation physical model, which solves the problem that the HeavyIon model is not easy to converge, improves the efficiency and flexibility of single-particle effect simulation, and is suitable for single-particle effect simulation of FDSOI MOSFET devices.
Patent Information
- Application Number
- CN202411430385.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-14
- Publication Date
- 2024-12-24
AI Technical Summary
The existing single-particle effect simulation method is based on the HeavyIon model, which has problems that are not easy to converge, and has high requirements for device meshing, interface definition and solver settings. It cannot solve operations with other physical models, and is not suitable for laser simulation FDSOI. Irradiation status of MOSFET devices.
Using the Optical Generation physical model, by obtaining the calibrated FDSOI MOSFET device model, setting the optical interface and adjusting the material parameters of the sensitive channel area, so that the regenerated carrier concentration reaches the preset concentration, and using the target incident light and the target simulation model to achieve a single Simulation of particle effect.
It improves simulation efficiency and flexibility, enhances model convergence speed, and is suitable for single-particle effect simulation of laser-simulated FDSOI MOSFET devices.
Smart Images
Figure CN119180187A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of semiconductor device radiation resistance, and in particular to a single particle effect simulation method and related products. Background Art
[0002] Fully Depleted Silicon On Insulator (FDSOI) is one of the technical routes for advanced chips at nodes below 28nm. FDSOI devices are widely used in high-speed connections, RF and millimeter-wave circuits, aerospace and other products due to their strong gate control capabilities. The single event effect (SEE) is one of the ionizing radiation effects that FDSOI is subjected to in the space environment. For this reason, the study of single event irradiation simulation schemes for FDSOI MOSFET (Metal Oxide Semiconductor Field Effect Transistor) has become extremely important.
[0003] The existing simulation methods of single particle effects are mainly based on computer-aided design (Technology Computer Aided Design, TCAD), and simulated through the heavy ion irradiation (Heavy Ion Physics, HeavyIon) physical model. However, the HeavyIon model has the problem of difficult convergence, has high requirements for device meshing, interface definition, and solver settings, and cannot be solved and calculated together with other physical models.
[0004] Therefore, how to improve simulation efficiency while improving simulation flexibility is a problem that technical personnel in this field need to solve urgently. Summary of the invention
[0005] Based on the above problems, the present application provides a single particle effect simulation method and related products, which realize single particle effect simulation through the Optical Generation physical model, thereby improving the efficiency and flexibility of the simulation.
[0006] In a first aspect, an embodiment of the present application provides a method for simulating a single event effect, comprising:
[0007] Get the calibrated device model corresponding to the FDSOI MOSFET device;
[0008] Based on the calibrated device model, the Optical Generation physical model in the Sentaurus TCAD software is called to specify basic parameters of the target incident light; the basic parameters include wavelength, density, incident angle, incident window and polarization direction;
[0009] Based on the Optical Generation physical model, an optical interface is set for the sensitive channel region in the device model and material parameters of the sensitive channel region are adjusted so that the regenerated carrier concentration in the sensitive channel region reaches a preset concentration, and an adjusted target simulation model is obtained;
[0010] The target incident light and the target simulation model are used to realize the simulation of single particle effect.
[0011] Optionally, before obtaining the calibrated device model corresponding to the FDSOI MOSFET device, the method further includes:
[0012] Build the Sentaurus TCAD model corresponding to the FDSOI MOSFET device;
[0013] Meshing the Sentaurus TCAD model based on the SNMESH module in the Sentaurus TCAD software to obtain a meshed model corresponding to the FDSOI MOSFET device;
[0014] The type and step size of the solver are determined based on the number of cells in the meshed model.
[0015] Optionally, obtaining a calibrated device model corresponding to the FDSOI MOSFET device includes:
[0016] A carrier generation-recombination model, an SRH recombination model and a concentration-dependent mobility model are selected, and the electrical parameters of the Sentaurus TCAD model are calibrated according to the solution results of the solver, and a calibrated device model corresponding to the FDSOI MOSFET device is obtained.
[0017] Optionally, based on the calibrated device model, calling the Optical Generation physical model in the Sentaurus TCAD software to specify basic parameters of the target incident light includes:
[0018] Using a transient optical model to perform transient simulation on the calibrated device model, and using the solver to solve the model to obtain a solution result;
[0019] Based on the solution results, the Optical Generation physical model in Sentaurus TCAD software is called to specify the basic parameters of the target incident light.
[0020] Optionally, setting an optical interface for a sensitive channel region in the device model based on the Optical Generation physical model includes:
[0021] Invoking an optical solver to specify a minimum density and number of rays of the target incident light on an optical path;
[0022] Setting a first optical interface and a second optical interface for a sensitive channel region in the device model based on a solution result of the optical solver and the Optical Generation physical model, so that the target incident light can repeatedly act on the sensitive channel region;
[0023] The first optical interface is arranged on the upper surface of the sensitive channel region, and the second optical interface is arranged on the lower surface of the sensitive channel region.
[0024] Optionally, adjusting the material parameters of the sensitive channel region includes:
[0025] Modifying a parameter table corresponding to material parameters of the sensitive channel region through a reflection transmittance instruction;
[0026] Based on the solution result of the solver, two parameters on the digital table characterizing the reflectivity and absorptivity of the material to the incident light are modified.
[0027] Optionally, the using the target incident light and the target simulation model to realize the simulation of the single particle effect includes:
[0028] The solver is used to solve the single particle effect simulation process of the target incident light and the target simulation model, and obtain the single particle effect simulation result.
[0029] In a second aspect, an embodiment of the present application provides a single-particle effect simulation device, including:
[0030] An acquisition module, used for acquiring a calibrated device model corresponding to a FDSOI MOSFET device;
[0031] A specification module, for specifying basic parameters of the target incident light by calling the Optical Generation physical model in the Sentaurus TCAD software based on the calibrated device model; the basic parameters include wavelength, density, incident angle, incident window and polarization direction;
[0032] An adjustment module, used for setting an optical interface for a sensitive channel region in the device model and adjusting material parameters of the sensitive channel region based on the Optical Generation physical model, so that the regenerated carrier concentration in the sensitive channel region reaches a preset concentration, and obtaining an adjusted target simulation model;
[0033] The simulation module is used to realize the simulation of single particle effect by using the target incident light and the target simulation model.
[0034] In a third aspect, an embodiment of the present application provides a single event effect simulation device, including:
[0035] Memory for storing computer programs;
[0036] A processor is used to implement the steps of the single-particle effect simulation method as described above when executing the computer program.
[0037] In a fourth aspect, an embodiment of the present application provides a readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the steps of the single particle effect simulation method as described above are implemented.
[0038] It can be seen from the above technical solutions that compared with the prior art, the present application has the following advantages:
[0039] This application first obtains the calibrated device model corresponding to the FDSOI MOSFET device. Then, based on the calibrated device model, the Optical Generation physical model in the Sentaurus TCAD software is called to specify the basic parameters of the target incident light. Among them, the basic parameters include wavelength, density, incident angle, incident window, and polarization direction. Finally, based on the Optical Generation physical model, an optical interface is set for the sensitive channel area in the device model and the material parameters of the sensitive channel area are adjusted so that the regenerated carrier concentration in the sensitive channel area reaches a preset concentration, and the adjusted target simulation model is obtained, and the target incident light and the target simulation model are used to realize the simulation of the single particle effect. In this way, the single particle effect simulation is realized through the Optical Generation physical model, thereby improving the model convergence speed. BRIEF DESCRIPTION OF THE DRAWINGS
[0040] Figure 1 A flowchart of a method for simulating a single-particle effect provided in an embodiment of the present application;
[0041] Figure 2 A schematic diagram of setting an optical interface provided in an embodiment of the present application;
[0042] Figure 3A schematic diagram of modifying material parameters of a sensitive channel region provided in an embodiment of the present application;
[0043] Figure 4 A schematic diagram of a carrier concentration distribution curve in a channel simulated by an Optical Generation model and a Heavy Ion model provided in an embodiment of the present application;
[0044] Figure 5 A schematic diagram of the structure of a single particle effect simulation device provided in an embodiment of the present application. DETAILED DESCRIPTION
[0045] As mentioned above, existing single-particle effect simulation methods have the problems of low simulation efficiency and poor flexibility. Specifically, existing single-particle effect simulation methods are mostly based on Sentaurus TCAD software and simulated through the HeavyIon model. However, the HeavyIon model is not easy to converge, and has high requirements for device meshing, interface definition, and solver settings, and is not easy to solve and calculate with other physical models. In addition, the HeavyIon model is not suitable for laser simulation of SEE irradiation of FDSOI MOSFET devices.
[0046] In order to solve the above problems, an embodiment of the present application provides a simulation method for single particle effects, including: first, obtaining a calibrated device model corresponding to the FDSOI MOSFET device. Then, based on the calibrated device model, the Optical Generation physical model in the Sentaurus TCAD software is called to specify the basic parameters of the target incident light. Among them, the basic parameters include wavelength, density, incident angle, incident window and polarization direction. Finally, based on the Optical Generation physical model, an optical interface is set for the sensitive channel region in the device model and the material parameters of the sensitive channel region are adjusted so that the regenerated carrier concentration in the sensitive channel region reaches a preset concentration, and the adjusted target simulation model is obtained, and the target incident light and the target simulation model are used to realize the simulation of the single particle effect.
[0047] In this way, single particle effect simulation is realized through the Optical Generation physical model, thereby improving the model convergence speed.
[0048] It should be noted that the simulation method of a single particle effect and related products provided by the present application can be applied to the field of radiation resistance of semiconductor devices. The above is only an example and does not limit the application field of the simulation method of a single particle effect and related products provided by the present application.
[0049] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0050] Figure 1 A flow chart of a method for simulating a single particle effect provided in an embodiment of the present application. Figure 1 As shown, a simulation method for a single event effect provided in an embodiment of the present application may include:
[0051] S101: Obtain a calibrated device model corresponding to the FDSOI MOSFET device.
[0052] In practical applications, the effect of SEE on FDSOI devices can be equivalently simulated through ground irradiation simulation devices such as laser sources, heavy ion accelerators, etc., so as to realize the simulation of single particle effects. And because the HeavyIon model has the defects of being difficult to converge, unable to solve and calculate with other physical models, and not suitable for laser simulation irradiation conditions, this application provides a special photogenerated carrier (Optical Generation Physics, OPT) physical model to replace the HeavyIon model to realize single particle effect simulation. To this end, it is necessary to set the parameters of the incident light and construct a model of the FDSOI MOSFET device according to the requirements of the OPT physical model, so as to realize the simulation of single particle effects. First, this application needs to use Sentaurus TCAD software to construct a device model of the FDSOI MOSFET device, and then calibrate the electrical parameters of the device model to obtain a more reasonable device model for backup.
[0053] In addition, since there are different ways to determine the solver type, the embodiments of the present application can illustrate a possible determination method.
[0054] In one embodiment, before obtaining the calibrated device model corresponding to the FDSOI MOSFET device, the method further includes:
[0055] Build the Sentaurus TCAD model corresponding to the FDSOI MOSFET device;
[0056] Meshing the Sentaurus TCAD model based on the SNMESH module in the Sentaurus TCAD software to obtain a meshed model corresponding to the FDSOI MOSFET device;
[0057] The type and step size of the solver are determined based on the number of cells in the meshed model.
[0058] In practical applications, the SDE module of Sentaurus TCAD software is first used to model FDSOI MOSFET according to the mainstream FDSOI device structure, that is, to build the Sentaurus TCAD model corresponding to the FDSOI MOSFET device. The mainstream FDSOI device structure generally includes an ultra-thin buried oxide layer and an ultra-thin silicon film channel (sensitive channel area), etc. Then, the Sentaurus TCAD model corresponding to the FDSOI MOSFET device is gridded according to the SNMESH module in Sentaurus TCAD software to obtain a gridded model. Finally, the solver type is determined to be Pardiso and the step size is specified based on the number of grids in the gridded model. Pardiso is a commercial high-speed sparse matrix linear equation direct method solver that can solve large sparse symmetric or asymmetric linear equations. The step size refers to the time or parameter adjustment amplitude taken each time the model parameters are updated or the system state is calculated during the simulation process.
[0059] In addition, since the method of obtaining the calibrated device model corresponding to the FDSOI MOSFET device is the same, the embodiment of the present application can illustrate a possible acquisition method.
[0060] In one case, S101: obtaining a calibrated device model corresponding to the FDSOI MOSFET device may specifically include:
[0061] A carrier generation-recombination model, an SRH recombination model and a concentration-dependent mobility model are selected, and the electrical parameters of the Sentaurus TCAD model are calibrated according to the solution results of the solver, and a calibrated device model corresponding to the FDSOI MOSFET device is obtained.
[0062] In practical applications, the constructed Sentaurus TCAD model also needs to be calibrated for electrical parameters to obtain a more reasonable device model. Specifically, this application introduces the carrier generation-recombination model, the SRH (Shockley-Read-Hall) composite model and the concentration-dependent mobility physical model in the Sentaurus TCAD software. By selecting the above models in the operation page of the Sentaurus TCAD software and combining them with the above-mentioned Pardiso solver for solving, the area factor (AreaFactor) of the Sentaurus TCAD model, the key doping concentration and size of the device, and the gate work function (Workfunction) of the Sentaurus TCAD model are adjusted using the obtained solution results to calibrate the electrical parameters of the Sentaurus TCAD model to obtain a calibrated device model.
[0063] S102: Based on the calibrated device model, the Optical Generation physical model in the Sentaurus TCAD software is called to specify basic parameters of the target incident light; the basic parameters include wavelength, density, incident angle, incident window and polarization direction.
[0064] In practical applications, after calibrating the device model corresponding to the FDSOI MOSFET device, the target incident light is introduced and the basic parameters of the target incident light are set. Specifically, the embodiment of the present application can call the Optical Generation physical model in the SDEVICE module of the Sentaurus TCAD software to specify the basic parameters of the target incident light. Among them, the basic parameters include the wavelength (Wavelength), density (Intensity), incident angle (Theta), incident window (Window) and polarization direction (Polarization) of the target incident light.
[0065] In addition, since the methods of specifying the basic parameters of the target incident light are not the same, the embodiments of the present application can be described with respect to one possible specifying method.
[0066] In one case, based on the calibrated device model, calling the Optical Generation physical model in the Sentaurus TCAD software to specify basic parameters of the target incident light may specifically include:
[0067] Using a transient optical model to perform transient simulation on the calibrated device model, and using the solver to solve the model to obtain a solution result;
[0068] Based on the solution results, the Optical Generation physical model in Sentaurus TCAD software is called to specify the basic parameters of the target incident light.
[0069] In practical applications, the transient optics (TimeDependence) model is introduced to perform transient simulation based on the device model and the target incident light, and the time when the target incident light enters the device model and the rising edge slope reaches the same opening time as the HeavyIon model are specified. The above-mentioned Pardiso solver is combined for solution, and based on the obtained solution results, the Optical Generation physical model in the Sentaurus TCAD software is called to specify the basic parameters such as the wavelength (Wavelength), density (Intensity), incident angle (Theta), incident window (Window) and polarization direction (Polarization) of the target incident light.
[0070] S103: Based on the Optical Generation physical model, an optical interface is set for the sensitive channel region in the device model and material parameters of the sensitive channel region are adjusted so that the regenerated carrier concentration in the sensitive channel region reaches a preset concentration, and an adjusted target simulation model is obtained.
[0071] In practical applications, the thickness of the sensitive channel region in the calibrated device model is very thin, generally only 7nm. Based on such a thin sensitive channel region, the conventional parameter setting of the Optical Generation physical model cannot make the regenerated carrier concentration in the sensitive channel region reach a simulation effect similar to that of the HeavyIon model. To this end, the present application adjusts the parameters of the Optical Generation physical model. Specifically, the embodiment of the present application adds an optical interface to the sensitive channel region of the calibrated device model through the Optical Generation physical model, so that the target incident light can be repeatedly reflected in the sensitive channel region, thereby increasing the regenerated carrier concentration in the region. In addition, the material parameters of the sensitive channel region can be adjusted by the Optical Generation physical model to make it more light-absorbent, thereby increasing the regenerated carrier concentration in the region. During this period, the solver is used to solve, and the above-mentioned optical interface and material parameters are adjusted according to the solution results until the regenerated carrier concentration when the Optical Generation physical model is used is similar to that when the HeavyIon model is used (reaching the preset concentration), the optical interface and material parameters at this time are determined, and the adjusted target simulation model for simulation is obtained.
[0072] In addition, since the methods of setting the optical interface are not the same, the embodiments of the present application can be described with respect to one possible setting method.
[0073] In one embodiment, the step of setting an optical interface for a sensitive channel region in the device model based on the Optical Generation physical model includes:
[0074] Invoking an optical solver to specify a minimum density and number of rays of the target incident light on an optical path;
[0075] Setting a first optical interface and a second optical interface for a sensitive channel region in the device model based on a solution result of the optical solver and the Optical Generation physical model, so that the target incident light can repeatedly act on the sensitive channel region;
[0076] The first optical interface is arranged on the upper surface of the sensitive channel region, and the second optical interface is arranged on the lower surface of the sensitive channel region.
[0077] Figure 2 A schematic diagram of setting an optical interface provided in an embodiment of the present application. Figure 2 As shown, the present application calls the optical solver RayTracing to specify the minimum density MinIntensity and the number of rays NumberOfRays on the optical path, and solves them. Then, in order to achieve a simulation effect similar to the HeavyIon model, based on the solution results and the Optical Generation physical model, the first optical interface L1 and the second optical interface L2 are respectively set for the upper and lower interfaces of the sensitive channel area in the device model, and the reflection coefficients Relectivity of L1 and L2 are set close to 1. In this way, most of the target incident light incident on the upper surface of the sensitive channel area can be reflected between the two optical interfaces L1 and L2, and repeatedly act on the sensitive channel area, so that the regenerated carrier concentration in the sensitive channel area is significantly improved. It can be understood that after adjusting the parameters of the Optical Generation physical model to set the first optical interface and the second optical interface, the regenerated carrier concentration in the sensitive channel area can be increased by about 10 times compared with the original default Optical Generation physical model parameters.
[0078] In addition, since the methods for adjusting the material parameters of the sensitive channel region are not the same, the embodiment of the present application can be described with respect to a possible adjustment method.
[0079] In one embodiment, adjusting the material parameters of the sensitive channel region includes:
[0080] Modifying a parameter table corresponding to material parameters of the sensitive channel region through a reflection transmittance instruction;
[0081] Based on the solution result of the solver, two parameters on the digital table characterizing the reflectivity and absorptivity of the material to the incident light are modified.
[0082] Figure 3 A schematic diagram of modifying material parameters of a sensitive channel region provided in an embodiment of the present application. Figure 3 As shown, in order to further improve the regenerated carrier concentration in the sensitive channel area, the material parameters of the sensitive channel area can continue to be modified through the Optical Generation physical model. Specifically, in the Sentaurus TCAD software, based on the Optical Generation physical model, the parameter table NumericalTable related to the material parameter Parameter of the sensitive channel area is modified through the reflective transmittance instruction ComplexRefractiveIndex. Then, based on the solution results of the solver, the n_0 and k_0 parameters corresponding to the target incident light in the digital table are appropriately modified to improve the absorptivity of the material in the sensitive channel area to the target incident light. It can be understood that the two parameters n_0 and k_0 characterize the reflectivity and absorptivity of the material in the sensitive channel area to the target incident light. In this way, more electron-hole pairs can be generated for each light incident on the sensitive channel area, thereby increasing the regenerated carrier concentration in the sensitive channel area.
[0083] Figure 4 A schematic diagram of a carrier concentration distribution curve in a channel simulated by an Optical Generation model and a HeavyIon model provided in an embodiment of the present application. Figure 4 As shown in the figure, OPT_window is the regenerated carrier concentration distribution curve in the sensitive channel region when adding the optical interfaces L1 and L2 with a reflectivity of 1. Compared with the default OPT_default model, the regenerated carrier concentration is increased by about 10 times. In addition, the regenerated carrier concentration in the sensitive channel region of the special OPT model simulation result OPT_window_parameter obtained after the above parameter adjustment is very close to the regenerated carrier concentration simulated by the HeavyIon model with LET of 10.
[0084] S104: Utilizing the target incident light and the target simulation model to realize single particle effect simulation.
[0085] In practical applications, the basic parameters of the target incident light are specified by the Optical Generation physical model, and the device model is adjusted to increase the concentration of regenerated carriers in the sensitive channel region so that it reaches the target simulation model that is similar to that obtained when the HeavyIon model is used. Then, the simulation of single particle effects is realized using the target incident light and the target simulation model.
[0086] In addition, since the simulation solution methods are not the same, the embodiment of the present application can illustrate a possible solution method.
[0087] In one case, S104: using the target incident light and the target simulation model to realize the simulation of the single event effect may specifically include:
[0088] The solver is used to solve the single particle effect simulation process of the target incident light and the target simulation model, and obtain the single particle effect simulation result.
[0089] In practical applications, the Pardiso solver with the specified step size is used to solve the simulation process of the target incident light and the target simulation model, and the drain current pulse time curve of the FDSOI MOSFET device is retrieved in the SVISUAL module to observe the instantaneous pulse shape of the FDSOI MOSFET device caused by the injection of the target incident light. The peak value of the pulse and the total amount of collected charge after integration are used to evaluate the impact on the FDSOI MOSFET device, thereby realizing the simulation of the single particle effect of the FDSOI MOSFET device.
[0090] In summary, the present application first obtains the calibrated device model corresponding to the FDSOI MOSFET device. Then, based on the calibrated device model, the Optical Generation physical model in the Sentaurus TCAD software is called to specify the basic parameters of the target incident light. Among them, the basic parameters include wavelength, density, incident angle, incident window, and polarization direction. Finally, based on the Optical Generation physical model, an optical interface is set for the sensitive channel area in the device model and the material parameters of the sensitive channel area are adjusted so that the regenerated carrier concentration in the sensitive channel area reaches a preset concentration, and the adjusted target simulation model is obtained, and the target incident light and the target simulation model are used to realize the simulation of the single particle effect. In this way, the single particle effect simulation is realized through the OPT physical model, thereby improving the model convergence speed.
[0091] Based on the single particle effect simulation method provided in the above embodiment, the present application also provides a single particle effect simulation device. The single particle effect simulation device is described below in conjunction with the embodiments and drawings.
[0092] Figure 5 A schematic diagram of the structure of a single particle effect simulation device provided in an embodiment of the present application.
[0093] Combination Figure 5 As shown, the single-particle effect simulation device 500 provided in the embodiment of the present application includes:
[0094] An acquisition module 501 is used to acquire a calibrated device model corresponding to a FDSOI MOSFET device;
[0095] A specifying module 502 is used to call the Optical Generation physical model in the Sentaurus TCAD software to specify basic parameters of the target incident light based on the calibrated device model; the basic parameters include wavelength, density, incident angle, incident window and polarization direction;
[0096] An adjustment module 503 is used to set an optical interface for the sensitive channel region in the device model based on the Optical Generation physical model and adjust the material parameters of the sensitive channel region so that the regenerated carrier concentration in the sensitive channel region reaches a preset concentration, and obtain an adjusted target simulation model;
[0097] The simulation module 504 is used to realize the simulation of single-particle effects using the target incident light and the target simulation model.
[0098] As an implementation manner, with respect to how to determine the solver type, the above-mentioned single particle effect simulation device 500 further includes: a construction module;
[0099] A construction module for building the Sentaurus TCAD model corresponding to the FDSOI MOSFET device;
[0100] Meshing the Sentaurus TCAD model based on the SNMESH module in the Sentaurus TCAD software to obtain a meshed model corresponding to the FDSOI MOSFET device;
[0101] The type and step size of the solver are determined based on the number of cells in the meshed model.
[0102] As an implementation manner, with respect to how to obtain a calibrated device model corresponding to a FDSOI MOSFET device, the acquisition module 501 is specifically used to:
[0103] A carrier generation-recombination model, an SRH recombination model and a concentration-dependent mobility model are selected, and the electrical parameters of the Sentaurus TCAD model are calibrated according to the solution results of the solver, and a calibrated device model corresponding to the FDSOI MOSFET device is obtained.
[0104] As an implementation manner, with respect to how to define basic parameters of the target incident light, the definition module 502 is specifically used to:
[0105] Using a transient optical model to perform transient simulation on the calibrated device model, and using the solver to solve the model to obtain a solution result;
[0106] Based on the solution results, the Optical Generation physical model in Sentaurus TCAD software is called to specify the basic parameters of the target incident light.
[0107] As an implementation manner, regarding how to set the optical interface, the adjustment module 503 is specifically used to:
[0108] Invoking an optical solver to specify a minimum density and number of rays of the target incident light on an optical path;
[0109] Setting a first optical interface and a second optical interface for a sensitive channel region in the device model based on a solution result of the optical solver and the Optical Generation physical model, so that the target incident light can repeatedly act on the sensitive channel region;
[0110] The first optical interface is arranged on the upper surface of the sensitive channel region, and the second optical interface is arranged on the lower surface of the sensitive channel region.
[0111] As an implementation manner, regarding how to adjust the material parameters of the sensitive channel region, the adjustment module 503 is further specifically used for:
[0112] Modifying a parameter table corresponding to material parameters of the sensitive channel region through a reflection transmittance instruction;
[0113] Based on the solution result of the solver, two parameters on the digital table characterizing the reflectivity and absorptivity of the material to the incident light are modified.
[0114] As an implementation method, regarding how to implement the simulation of single-particle effects, the simulation module 504 is specifically used to:
[0115] The solver is used to solve the single particle effect simulation process of the target incident light and the target simulation model, and obtain the single particle effect simulation result.
[0116] In summary, the present application first obtains the calibrated device model corresponding to the FDSOI MOSFET device. Then, based on the calibrated device model, the Optical Generation physical model in the Sentaurus TCAD software is called to specify the basic parameters of the target incident light. Among them, the basic parameters include wavelength, density, incident angle, incident window, and polarization direction. Finally, based on the Optical Generation physical model, an optical interface is set for the sensitive channel area in the device model and the material parameters of the sensitive channel area are adjusted so that the regenerated carrier concentration in the sensitive channel area reaches a preset concentration, and the adjusted target simulation model is obtained, and the target incident light and the target simulation model are used to realize the simulation of the single particle effect. In this way, the single particle effect simulation is realized through the OPT physical model, thereby improving the model convergence speed.
[0117] In addition, the present application also provides a single particle effect simulation device, including: a memory for storing a computer program; a processor for implementing the steps of the single particle effect simulation method as described above when executing the computer program.
[0118] In addition, the present application also provides a readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the single particle effect simulation method as described above are implemented.
[0119] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A method for simulating a single event effect, characterized in that: The method comprises: Obtain the calibrated device model corresponding to the FDSOIMOSFET device; Based on the calibrated device model, the Optical Generation physical model in the Sentaurus TCAD software is called to specify basic parameters of the target incident light; the basic parameters include wavelength, density, incident angle, incident window and polarization direction; Based on the Optical Generation physical model, an optical interface is set for the sensitive channel region in the device model and material parameters of the sensitive channel region are adjusted so that the regenerated carrier concentration in the sensitive channel region reaches a preset concentration, and an adjusted target simulation model is obtained; The target incident light and the target simulation model are used to realize the simulation of single particle effect.
2. The method according to claim 1, characterized in that Before obtaining the calibrated device model corresponding to the FDSOIMOSFET device, the method further includes: Build the Sentaurus TCAD model corresponding to the FDSOI MOSFET device; Meshing the Sentaurus TCAD model based on the SNMESH module in the Sentaurus TCAD software to obtain a meshed model corresponding to the FDSOIMOSFET device; The type and step size of the solver are determined based on the number of cells in the meshed model.
3. The method according to claim 2, characterized in that The obtaining of a calibrated device model corresponding to the FDSOIMOSFET device includes: A carrier generation-recombination model, an SRH recombination model and a concentration-dependent mobility model are selected, and the electrical parameters of the Sentaurus TCAD model are calibrated according to the solution results of the solver, and a calibrated device model corresponding to the FDSOIMOSFET device is obtained.
4. The method according to claim 2, characterized in that: Based on the calibrated device model, the Optical Generation physical model in the Sentaurus TCAD software is called to specify basic parameters of the target incident light, including: Using a transient optical model to perform transient simulation on the calibrated device model, and using the solver to solve the model to obtain a solution result; Based on the solution results, the Optical Generation physical model in Sentaurus TCAD software is called to specify the basic parameters of the target incident light.
5. The method according to claim 1, characterized in that The step of setting an optical interface for a sensitive channel region in the device model based on the Optical Generation physical model includes: Invoking an optical solver to specify a minimum density and number of rays of the target incident light on an optical path; Setting a first optical interface and a second optical interface for a sensitive channel region in the device model based on a solution result of the optical solver and the Optical Generation physical model, so that the target incident light can repeatedly act on the sensitive channel region; The first optical interface is arranged on the upper surface of the sensitive channel region, and the second optical interface is arranged on the lower surface of the sensitive channel region.
6. The method according to claim 1, characterized in that The adjusting the material parameters of the sensitive channel region includes: Modifying a parameter table corresponding to material parameters of the sensitive channel region through a reflection transmittance instruction; Based on the solution result of the solver, two parameters on the digital table characterizing the reflectivity and absorptivity of the material to the incident light are modified.
7. The method according to claim 2, characterized in that: The simulation of single-particle effects using the target incident light and the target simulation model includes: The solver is used to solve the single particle effect simulation process of the target incident light and the target simulation model, and obtain the single particle effect simulation result.
8. A single-event effect simulation device, characterized in that: include: An acquisition module, used for acquiring a calibrated device model corresponding to a FDSOIMOSFET device; A specification module, for specifying basic parameters of the target incident light by calling the Optical Generation physical model in the Sentaurus TCAD software based on the calibrated device model; the basic parameters include wavelength, density, incident angle, incident window and polarization direction; An adjustment module, used for setting an optical interface for a sensitive channel region in the device model and adjusting material parameters of the sensitive channel region based on the Optical Generation physical model, so that the regenerated carrier concentration in the sensitive channel region reaches a preset concentration, and obtaining an adjusted target simulation model; The simulation module is used to realize the simulation of single particle effect by using the target incident light and the target simulation model.
9. A single event effect simulation device, characterized in that: include: Memory for storing computer programs; A processor, configured to implement the steps of the single particle effect simulation method as claimed in any one of claims 1 to 7 when executing the computer program.
10. A readable storage medium, characterized in that: The readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the single particle effect simulation method according to any one of claims 1 to 7 are implemented.