Evaporation apparatus and evaporation system

Abstract

This disclosure provides a vapor deposition apparatus and system, relating to the field of display technology. The vapor deposition apparatus includes a crucible body, a first limiting plate, a second limiting plate, and an adjustment mechanism. The crucible body has a vapor deposition chamber and a vapor deposition port connecting the vapor deposition chamber to the outside. An evaporation source is disposed within the vapor deposition chamber. The first limiting plate is located between the evaporation source and the vapor deposition port, and has a through first vapor deposition hole. The second limiting plate is located between the evaporation source and the vapor deposition port, and has a through second vapor deposition hole. The first and second limiting plates are stacked in the depth direction of the vapor deposition chamber, and the first and second vapor deposition holes overlap to form a vapor deposition channel, which connects the evaporation source and the vapor deposition port. The adjustment mechanism is drivenly connected to the second limiting plate, allowing the second limiting plate to be slidably positioned relative to the first limiting plate to change the overlap area of ​​the first and second vapor deposition holes. The vapor deposition apparatus of this disclosure can adjust the vapor deposition rate in different regions.

Description

Technical Field

[0001] This disclosure relates to the field of display technology, and more specifically, to a vapor deposition apparatus and a vapor deposition system. Background Technology

[0002] In the manufacturing process of display panels, material evaporation is a core process. Evaporation refers to the process of heating and evaporating or sublimating the material to be formed into a film in a vacuum environment, causing it to condense or deposit on the surface of a substrate to form a film layer. In current evaporation processes, the evaporation rate is uneven in different areas when the evaporation material leaves the evaporation chamber from the evaporation port, which affects the utilization rate of the evaporation material and the evaporation effect.

[0003] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0004] The purpose of this disclosure is to overcome the shortcomings of the prior art and provide a vapor deposition apparatus and vapor deposition system that can adjust the vapor deposition rate of different regions when the vapor deposition material leaves the vapor deposition chamber from the vapor deposition port.

[0005] According to one aspect of this disclosure, a vapor deposition apparatus is provided, comprising:

[0006] The crucible body has a vapor deposition chamber and a vapor deposition port connecting the vapor deposition chamber to the outside. An evaporation source is provided in the vapor deposition chamber.

[0007] A first limiting plate is disposed between the evaporation source and the vapor deposition port, and the first limiting plate has a through first vapor deposition hole;

[0008] A second limiting plate is disposed between the evaporation source and the vapor deposition port. The second limiting plate has a through second vapor deposition hole. The first limiting plate and the second limiting plate are stacked in the depth direction of the vapor deposition chamber. The first vapor deposition hole and the second vapor deposition hole overlap to form a vapor deposition channel. The vapor deposition channel connects the evaporation source and the vapor deposition port.

[0009] An adjustment mechanism, which is connected to the second limiting plate, is used to allow the second limiting plate to be slidably disposed relative to the first limiting plate, so as to change the overlapping area of ​​the first vapor deposition hole and the second vapor deposition hole.

[0010] In one exemplary embodiment of this disclosure, the evaporation source includes a source container and a heater. The source container is disposed in the vapor deposition chamber and is used to hold vapor deposition material. The heater is disposed on the outer periphery of the source container and is used to heat and vaporize the vapor deposition material. The vapor deposition apparatus includes a plurality of nozzles arranged along a first direction. The nozzles are connected to the vapor deposition port so that the gaseous vapor deposition material is discharged from the nozzles. The first direction is perpendicular to the depth direction of the vapor deposition chamber.

[0011] In one exemplary embodiment of this disclosure, the heater includes a heating base plate disposed on the side of the source container away from the vapor deposition port. The heating base plate has a first heating zone and a second heating zone along the first direction. The first heating zone is provided with a first heating element, and the second heating zone is provided with a second heating element.

[0012] In one exemplary embodiment of this disclosure, the vapor deposition chamber is provided with a plurality of evaporation sources arranged along the first direction, and the source containers of each evaporation source are not connected; the evaporation source includes at least a first evaporation source located in the first heating zone, a second evaporation source located in the second heating zone, and a third evaporation source located between the first evaporation source and the second evaporation source;

[0013] The nozzle includes at least a first nozzle, a second nozzle, and a third nozzle. The first nozzle's orthographic projection on the heating base plate is located within the first evaporation source. The second nozzle's orthographic projection on the heating base plate is located within the second evaporation source. The third nozzle's orthographic projection on the heating base plate is located within the third evaporation source. The number of first nozzles is greater than the number of third nozzles, and the number of second nozzles is greater than the number of third nozzles.

[0014] In one exemplary embodiment of this disclosure, the vapor deposition apparatus further includes a deposition rate monitoring mechanism, which is used to monitor the deposition rate v1 of the first nozzle and the deposition rate v2 of the second nozzle.

[0015] The plating rate monitoring mechanism is used to control the second heating element to heat up relative to the first heating element when v1 > v2; the plating rate monitoring mechanism is used to control the second heating element to cool down relative to the first heating element when v1 < v2.

[0016] In one exemplary embodiment of this disclosure, the vapor deposition apparatus includes a weight monitoring mechanism, which includes a first pressure sensor and a second pressure sensor. The first pressure sensor is disposed in the first heating zone, and the second pressure sensor is disposed in the second heating zone. The weight monitoring mechanism is used to obtain the weight difference t of the vapor deposition material located in the source container in the first heating zone and the source container located in the second heating zone. When t > 0, the weight of the vapor deposition material in the source container in the first heating zone is greater than that in the second heating zone; when t < 0, the weight of the vapor deposition material in the source container in the second heating zone is greater than that in the first heating zone.

[0017] In one exemplary embodiment of this disclosure, the adjusting mechanism is signal-connected to the weight monitoring mechanism;

[0018] The first limiting plate is located on the side of the second limiting plate away from the vapor deposition port. The adjustment mechanism is used to drive the second limiting plate to move closer to the second heating zone when t > 0, and the adjustment mechanism is used to drive the second limiting plate to move closer to the first heating zone when t < 0.

[0019] Alternatively, the first limiting plate is disposed on the side of the second limiting plate near the vapor deposition port, and the adjustment mechanism is used to drive the second limiting plate to move towards the first heating zone when t>0, and the adjustment mechanism is used to drive the second limiting plate to move towards the second heating zone when t<0.

[0020] In one exemplary embodiment of this disclosure, the adjusting mechanism includes a transmission rod, the axis of which is arranged along the first direction, one end of which abuts against the second limiting plate, and the other end of which extends out from the crucible body.

[0021] In one exemplary embodiment of this disclosure, the adjustment mechanism further includes a drive motor, the transmission rod is threadedly connected to the crucible body, and a swing arm is provided at one end of the transmission rod that extends out of the crucible body. The drive motor is used to drive the swing arm to swing back and forth so that the transmission rod pushes the second limiting plate to slide along the first direction.

[0022] In one exemplary embodiment of this disclosure, the adjustment mechanisms are arranged in pairs at opposite ends of the second limiting plate along the first direction, and the adjustment mechanism on either side is used to push the second limiting plate to slide to the opposite side.

[0023] In one exemplary embodiment of this disclosure, the heater includes a heating top plate located on the side of the first limiting plate away from the source container and on the side of the second limiting plate away from the source container.

[0024] According to one aspect of this disclosure, a vapor deposition system is provided, comprising the vapor deposition apparatus described in any of the preceding claims.

[0025] The vapor deposition apparatus and system disclosed herein can adjust the overlap area of ​​the first and second vapor deposition holes by sliding the second limiting plate relative to the first limiting plate through an adjusting mechanism. The sidewall of the vapor deposition channel is formed by the inner wall of the overlapping portion of the first and second vapor deposition holes. Therefore, the change in the overlap area of ​​the first and second vapor deposition holes causes the sidewall of the vapor deposition channel to have an inclined angle, thereby causing the gaseous vapor deposition material to be ejected from the vapor deposition port at a specific angle. The vapor deposition rate increases in the region along the inclined direction of the vapor deposition channel, and decreases in the region along the opposite direction, thus achieving adjustment of the vapor deposition rate in different regions.

[0026] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0027] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure. It is obvious that the drawings described below are merely some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0028] Figure 1 This is a schematic diagram of one embodiment of the vapor deposition apparatus disclosed herein.

[0029] Figure 2 This is a schematic diagram of the first and second vapor deposition holes of one embodiment of the vapor deposition apparatus of this disclosure.

[0030] Figure 3 This is a schematic diagram of the first and second vapor deposition holes of one embodiment of the vapor deposition apparatus of this disclosure.

[0031] Figure 4 This is a schematic diagram of the first limiting plate of one embodiment of the vapor deposition apparatus of this disclosure.

[0032] Figure 5 This is a schematic diagram of the second limiting plate of one embodiment of the vapor deposition apparatus of this disclosure.

[0033] Figure 6 This is a schematic diagram showing the movement of the second limiting plate relative to the first limiting plate in one embodiment of the vapor deposition apparatus of this disclosure.

[0034] Figure 7 This is a schematic diagram of the deposition rate monitoring mechanism and the weight monitoring mechanism of one embodiment of the vapor deposition apparatus disclosed herein.

[0035] 1. Crucible body; 2. First limiting plate; 201. First evaporation hole; 3. Second limiting plate; 301. Second evaporation hole; 41. First evaporation source; 42. Second evaporation source; 43. Third evaporation source; 51. First nozzle; 52. Second nozzle; 53. Third nozzle; 61. First plating rate monitor; 62. Second plating rate monitor; 71. First pressure sensor; 72. Second pressure sensor. Detailed Implementation

[0036] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore detailed descriptions of them will be omitted. Furthermore, the drawings are merely illustrative of this disclosure and are not necessarily drawn to scale.

[0037] Although overlapping terms such as "upper," "lower," "top," and "bottom" are used in this specification to describe the overlapping relationship of one component of an icon with respect to another, these terms are used only for convenience, such as according to the orientation of the examples shown in the accompanying drawings. It is understood that if the device of the icon is flipped so that it is upside down, the component described as "upper" will become the component described as "lower." When a structure is "upper" of another structure, it may mean that the structure is integrally formed on the other structure, or that the structure is "directly" mounted on the other structure, or that the structure is "indirectly" mounted on the other structure through another structure. The "signal connection" described in this disclosure can be a wired communication connection or a wireless communication connection; it can be direct communication or indirect signal connection achieved through an intermediate medium.

[0038] The terms “a,” “one,” “the,” “the,” and “at least” are used to indicate the existence of one or more elements / components / etc.; the terms “including” and “having” are used to indicate an open-ended inclusion and to mean that there may be other elements / components / etc. in addition to the listed elements / components / etc.; the terms “first” and “second” are used only as markers and are not a limitation on the number of objects.

[0039] It should be noted that the first direction in this document is the direction perpendicular to the depth direction of the vapor deposition chamber, that is, the direction perpendicular to the thickness direction of the first limiting plate 2 and the second limiting plate 3. The first direction in this document does not have a specific orientation; for example, the first heating zone and the second heating zone being arranged along the first direction is equivalent to the second heating zone and the first heating zone being arranged along the first direction. Furthermore, due to the upper limit of precision in manufacturing, assembly, and measurement processes, the perpendicularity described in this disclosure may not actually be a perfectly 90° angle. For example, two mutually perpendicular components may also have an angle of 85° or 95°. As long as it is within the allowable error range of manufacturing precision, they should be considered mutually perpendicular. Therefore, it can be further explained that the concepts of plane, parallel, and symmetry mentioned in this disclosure are all within the allowable range of process precision.

[0040] In this article, the "overlap" of features A and B means that the orthographic projections of feature A and feature B on a plane at least partially coincide; this plane can be the bottom wall of the crucible body 1, the heating base plate, the surface of the substrate to be vaporized, etc. For example, the overlap of the first vapor deposition hole 201 and the second vapor deposition hole 301 means that the first vapor deposition hole 201 and the second vapor deposition hole 301 at least partially coincide in the depth direction of the vapor deposition chamber, so as to form a vapor deposition channel connecting the evaporation source and the vapor deposition port.

[0041] In display panels, material vapor deposition is a core process. For example, the organic layer of a display panel is usually made using vapor deposition. Vapor deposition refers to a process in which the vapor deposition material is heated and evaporated or sublimated in a vacuum environment. The gaseous vapor deposition material is then ejected from the vapor deposition port and finally deposited on a substrate at a lower temperature to form a continuous film layer.

[0042] In related technologies, due to factors such as heater power and setting position deviation, the vaporized material is heated and vaporized. When it leaves the vaporization chamber from the vaporization port and is deposited onto the substrate, there is a problem of uneven vaporization rate in different areas, which affects the utilization rate of the vaporized material and the vaporization effect.

[0043] To address the aforementioned technical problems, this disclosure provides a vapor deposition apparatus, with reference to... Figure 1As shown, the device includes a crucible body 1, a first limiting plate 2, a second limiting plate 3, and an adjustment mechanism. The crucible body 1 has a vapor deposition chamber and a vapor deposition port connecting the vapor deposition chamber to the outside. An evaporation source is located within the vapor deposition chamber. The first limiting plate 2 is positioned between the evaporation source and the vapor deposition port, and has a through first vapor deposition hole 201. The second limiting plate 3 is positioned between the evaporation source and the vapor deposition port, and has a through second vapor deposition hole 301. The first limiting plate 2 and the second limiting plate 3 are stacked in the depth direction of the vapor deposition chamber. The first vapor deposition hole 201 and the second vapor deposition hole 301 overlap to form a vapor deposition channel, which connects the evaporation source and the vapor deposition port. The adjustment mechanism is drivenly connected to the second limiting plate 3, allowing the second limiting plate 3 to be slidably positioned relative to the first limiting plate 2, thereby changing the overlapping area of ​​the first vapor deposition hole 201 and the second vapor deposition hole 301.

[0044] During the vapor deposition process, the vapor deposition material vaporizes and is ejected from the vapor deposition port after passing through the vapor deposition channel. The second limiting plate 3 can be slid relative to the first limiting plate 2 by an adjusting mechanism to change the overlap area between the first vapor deposition port 201 and the second vapor deposition port 301. The sidewall of the vapor deposition channel is formed by the inner wall of the overlapping portion of the first vapor deposition port 201 and the second vapor deposition port 301. Therefore, the change in the overlap area of ​​the first vapor deposition port 201 and the second vapor deposition port 301 causes the sidewall of the vapor deposition channel to have an inclined angle, thereby causing the gaseous vapor deposition material to be ejected from the vapor deposition port at a specific angle. The vapor deposition rate increases in the region along the inclined direction of the vapor deposition channel, and decreases in the region along the opposite direction, thus achieving adjustment of the vapor deposition rate in different regions.

[0045] For example, refer to Figure 2 As shown, the first limiting plate 2 is located on the side of the second limiting plate 3 away from the vapor deposition port, that is, the first limiting plate 2 is located below the second limiting plate 3. When the second limiting plate 3 moves to the left as shown in the figure, the second vapor deposition port 301 shifts to the left relative to the first vapor deposition port 201, causing the sidewall of the vapor deposition channel to tilt to the left, and the vapor deposition rate in the left area increases; similarly, when the second limiting plate 3 moves to the right, the second vapor deposition port 301 shifts to the right relative to the first vapor deposition port 201, causing the sidewall of the vapor deposition channel to tilt to the right, and the vapor deposition rate in the right area increases. Figure 2 The dashed arrow in the middle shows the flow direction of the gaseous vapor deposition material when the sidewall of the vapor deposition channel is tilted to the left.

[0046] For example, refer to Figure 3As shown, the first limiting plate 2 is located on the side of the second limiting plate 3 near the vapor deposition port, that is, the first limiting plate 2 is located above the second limiting plate 3. When the second limiting plate 3 moves to the left as shown in the figure, the second vapor deposition port 301 shifts to the left relative to the first vapor deposition port 201, causing the sidewall of the vapor deposition channel to tilt to the right, and increasing the vapor deposition rate in the right-side region; similarly, when the second limiting plate 3 moves to the right, the second vapor deposition port 301 shifts to the right relative to the first vapor deposition port 201, causing the sidewall of the vapor deposition channel to tilt to the left, and increasing the vapor deposition rate in the left-side region. Figure 3 The dashed-dot arrow in the middle shows the flow direction of the gaseous vapor deposition material when the sidewall of the vapor deposition channel is tilted to the right.

[0047] It should be noted that the transmission connection between the adjusting mechanism and the second limiting plate 3 described in this disclosure means that the adjusting mechanism and the second limiting plate 3 can transmit power unidirectionally or bidirectionally under specific conditions. For example, the adjusting mechanism can drive the second limiting plate 3 to move in a specific position, or the second limiting plate 3 can drive the adjusting mechanism to move in a specific position. This does not mean that the two must be in constant contact. For example, the adjusting mechanism can contact or disengage from the second limiting plate 3. When the adjusting mechanism is in contact with the second limiting plate 3, the adjusting mechanism can push the second limiting plate 3 to move; when the adjusting mechanism is disengaged from the second limiting plate 3, the movement of the adjusting mechanism does not drive the second limiting plate 3 to move.

[0048] Specifically, refer to Figure 4 The schematic diagram of the first limiting plate 2 shown is similar to... Figure 5 The schematic diagram of the second limiting plate 3 shows that the first limiting plate 2 may have multiple first vapor deposition holes 201, and the second limiting plate 3 may have multiple second vapor deposition holes 301. The first vapor deposition holes 201 may be arranged in an array in two directions perpendicular to the thickness direction of the first limiting plate 2. The first vapor deposition holes 201 may be arranged at equal intervals or at unequal intervals. The second vapor deposition holes 301 may correspond one-to-one with the first vapor deposition holes 201 to form vapor deposition channels.

[0049] For example, the first vapor deposition hole 201 and the second vapor deposition hole 301 can have the same shape and size. For instance, both the first vapor deposition hole 201 and the second vapor deposition hole 301 can be circular, and the array spacing of the first vapor deposition hole 201 and the second vapor deposition hole 301 can also be equal, so that when the second limiting plate 3 moves relative to the first limiting plate 2, the shape of each vapor deposition channel is the same. A schematic diagram of the movement of the second limiting plate 3 relative to the first limiting plate 2 can be found in [reference]. Figure 6 As shown.

[0050] For example, the shape and size of the first vapor deposition hole 201 and the second vapor deposition hole 301 may be different. For example, the first vapor deposition hole 201 may be a circular hole and the second vapor deposition hole 301 may be a square hole, or both the first vapor deposition hole 201 and the second vapor deposition hole 301 may be polygonal holes, making the shape of the vapor deposition channel more complex.

[0051] The evaporation source may include a source container and a heater. The source container is located within the evaporation chamber and is used to hold the evaporation material. The heater is located on the outer periphery of the source container and is used to heat and vaporize the evaporation material. The evaporation material may be solid, and the heater heats the evaporation material to sublimate it; or the evaporation material may be liquid, and the heater heats the evaporation material to evaporate it. For example, the heater may include a heating base plate located on the side of the source container away from the evaporation port. The heating base plate has a first heating zone and a second heating zone along a first direction. The first heating zone has a first heating element, and the second heating zone has a second heating element. Furthermore, the heater may also include a heating side plate, which may be circumferentially disposed on the side wall of the source container perpendicular to the heating base plate. The heating base plate heats the evaporation material at the bottom of the source container, and the heating side plate heats the evaporation material at the side of the source container, resulting in uniform heating of the evaporation material and high evaporation efficiency.

[0052] In one exemplary embodiment of this disclosure, the heater may further include a heating top plate located on the side of the first limiting plate 2 away from the source container and on the side of the second limiting plate 3 away from the source container. That is, the heating top plate is located above the top limiting plate of the first limiting plate 2 and the second limiting plate 3. For example, if the first limiting plate 2 is located above the second limiting plate 3, then the heating top plate is located above the first limiting plate 2; for example, if the second limiting plate 3 is located above the first limiting plate 2, then the heating top plate is located above the second limiting plate 3. The heating top plate can maintain the temperature of the gaseous vapor deposition material, ensuring good fluidity when it leaves the vapor deposition port, and the heating top plate can heat the first limiting plate 2 and the second limiting plate 3, preventing the gaseous vapor deposition material from depositing at the first limiting plate 2 and the second limiting plate 3.

[0053] For example, refer to Figure 1 As shown, the vapor deposition chamber contains multiple evaporation sources, and the source containers of each evaporation source are not connected. The evaporation sources may include a first evaporation source 41 located in a first heating zone, a second evaporation source 42 located in a second heating zone, and a third evaporation source 43 located between the first evaporation source 41 and the second evaporation source 42. Exemplarily, the first evaporation source 41, the third evaporation source 43, and the second evaporation source 42 are arranged sequentially along a first direction. Each evaporation source's source container may have a heating side plate on its outer periphery, and each evaporation source may share the same heating top plate. In other embodiments, the vapor deposition chamber may contain fewer evaporation sources, such as one or two evaporation sources; the vapor deposition chamber may also contain more evaporation sources.

[0054] For example, the orthographic projection of the first evaporation source 41 onto the heating base plate falls within the range of the first heating element; the orthographic projection of the second evaporation source 42 onto the heating base plate falls within the range of the second heating element; and the side of the third evaporation source 43 closest to the first evaporation source 41 also falls within the range of the first heating element, while the side of the third evaporation source 43 closest to the second evaporation source 42 falls within the range of the second heating element. During the vapor deposition process, the first heating element and the second heating element can be heated and their temperatures controlled independently, achieving different heating effects on the first evaporation source 41, the second evaporation source 42, and the third evaporation source 43, and achieving different vapor deposition rates in different regions of the vapor deposition ports corresponding to the first evaporation source 41, the second evaporation source 42, and the third evaporation source 43.

[0055] In one exemplary embodiment of this disclosure, the vapor deposition apparatus may include multiple nozzles connected to a vapor deposition port to allow gaseous vapor deposition material to be discharged from the nozzles. For example, the evaporation source may be a point source vapor deposition structure or a line source vapor deposition structure, and the nozzles may be a slit structure or a hole structure. Exemplarily, the multiple nozzles are arranged in an array along a first direction.

[0056] In one exemplary embodiment of this disclosure, reference is made to Figure 1 As shown, the nozzle includes at least a first nozzle 51, a second nozzle 52, and a third nozzle 53. The orthographic projection of the first nozzle 51 onto the heating base plate is located within the first evaporation source 41, the orthographic projection of the second nozzle 52 onto the heating base plate is located within the second evaporation source 42, and the orthographic projection of the third nozzle 53 onto the heating base plate is located within the third evaporation source 43. When the axes of the first evaporation hole 201 and the second evaporation hole 301 coincide, the evaporation channel is vertically continuous. Without interference from other factors, the evaporation material in the first evaporation source 41 is mainly ejected from the first nozzle 51, the evaporation material in the second evaporation source 42 is mainly ejected from the second nozzle 52, and the evaporation material in the third evaporation source 43 is mainly ejected from the third nozzle 53. Furthermore, the vaporized evaporation material within the evaporation sources can mix below the nozzles; therefore, some of the evaporation material in the first evaporation source 41 and the second evaporation source 42 may also be ejected from the third nozzle 53, and some of the evaporation material in the third evaporation source 43 may also be ejected from the first nozzle 51 and the second nozzle 52.

[0057] When the second limiting plate 3 is translated relative to the first limiting plate 2 under the action of the adjusting mechanism, the axes of the first evaporation hole 201 and the second evaporation hole 301 are misaligned, and the evaporation channel has an inclined angle in the vertical direction, which affects the amount of evaporation material gas entering each nozzle. For example, referring to the description of the aforementioned embodiment, when the sidewall of the evaporation channel is inclined towards the first nozzle 51 / first evaporation source 41 (to the left in the figure), the portion of the evaporation material in the third evaporation source 43 entering the first nozzle 51 increases, and the portion of the evaporation material in the second evaporation source 42 entering the third nozzle 53 increases. When the sidewall of the evaporation channel is inclined towards the second nozzle 52 / second evaporation source 42 (to the right in the figure), the portion of the evaporation material in the third evaporation source 43 entering the second nozzle 52 increases, and the portion of the evaporation material in the first evaporation source 41 entering the third nozzle 53 increases.

[0058] In one exemplary embodiment of this disclosure, the number of first nozzles 51 is greater than the number of third nozzles 53, and the number of second nozzles 52 is greater than the number of third nozzles 53. Exemplarily, the number of first nozzles 51 and the number of second nozzles 52 may be equal. Exemplarily, each nozzle may be symmetrical about the central axis of the vapor deposition chamber in a first direction.

[0059] In one exemplary embodiment of this disclosure, the vapor deposition apparatus further includes a deposition rate monitoring mechanism capable of monitoring the deposition rate in a specific area. For example, the deposition rate monitoring mechanism may include a first deposition rate monitor 61 and a second deposition rate monitor 62. (See reference...) Figure 7 As shown, both the first plating rate monitor 61 and the second plating rate monitor 62 are located outside the evaporation port, and the first plating rate monitor 61 and the second plating rate monitor 62 can be located on opposite sides of the evaporation port in a first direction (the left and right sides in the figure). For example, the first plating rate monitor 61 can be used to monitor the evaporation rate v1 of the first nozzle 51, and the second plating rate monitor 62 can be used to monitor the evaporation rate v2 of the second nozzle 52.

[0060] In other embodiments, additional monitors may be used to monitor the deposition rate v1 of the multiple first nozzles 51 and the deposition rate v2 of the second nozzles 52. Exemplarily, the first deposition rate monitor 61 and the second deposition rate monitor 62 can detect the deposition rate, for example, by calculating the deposition rate from the material deposition state of the deposition material deposited onto their surfaces. In other embodiments, the deposition rate may also be calculated using other methods in the prior art, which will not be detailed herein.

[0061] For example, the plating rate monitoring mechanism is signal-connected to the first heating element and the second heating element. When v1 > v2, the plating rate monitoring mechanism can control the second heating element to heat up relative to the first heating element; when v1 < v2, the plating rate monitoring mechanism can control the second heating element to cool down relative to the first heating element. The feedback adjustment mechanism between the plating rate monitoring mechanism and the first and second heating elements helps to ensure a uniform plating rate in the evaporation apparatus.

[0062] When the deposition rate monitoring mechanism detects that the deposition rate v1 of the first nozzle 51 is high, the second heating element can be heated relative to the first heating element. Specifically, this includes heating the second heating element, cooling the first heating element, or heating the second heating element while cooling the first heating element, so that the deposition rate of the area corresponding to the second heating element, such as the side of the second evaporation source 42 and the third evaporation source 43 closest to the second evaporation source 42, is relatively increased.

[0063] Similarly, when the deposition rate monitoring mechanism detects that the deposition rate of the second nozzle 52 is high, the second heating element can be cooled relative to the first heating element (the first heating element can be heated relative to the second heating element). Specifically, this includes cooling the second heating element, heating the first heating element, or heating the first heating element while cooling the second heating element, so that the deposition rate of the area corresponding to the first heating element, such as the side of the first evaporation source 41 and the third evaporation source 43 closest to the first evaporation source 41, is relatively increased.

[0064] In one exemplary embodiment of this disclosure, the vapor deposition apparatus may further include a weight monitoring mechanism for acquiring the weight difference t of the vapor deposition material located in the first heating zone and the source container located in the second heating zone. (Reference) Figure 7 As shown, the weight monitoring mechanism may include a first pressure sensor 71 and a second pressure sensor 72. The first pressure sensor 71 is located in the first heating zone, and the second pressure sensor 72 is located in the second heating zone. The first pressure sensor 71 and the second pressure sensor 72 may be symmetrically arranged relative to the central axis of the vapor deposition chamber in a first direction. By comparing the first pressure sensor 71 and the second pressure sensor 72, the weight difference t of the vapor deposition material on both sides of the vapor deposition chamber can be obtained, determining which direction the weight of the vapor deposition chamber is tilted in, and also determining the relationship between the consumption of vapor deposition material located in the first heating zone and the second heating zone.

[0065] For example, the first pressure sensor 71 can be used to obtain the weight m1 of the vapor-deposited material in the source container located in the first heating zone, and the second pressure sensor 72 can be used to obtain the weight m2 of the vapor-deposited material in the source container located in the second heating zone, where t = m1 - m2.

[0066] For example, due to factors such as heater power, installation location deviation, number and location of nozzles, the consumption rates of the vapor deposition material in the first evaporation source 41, the second evaporation source 42, and the third evaporation source 43 may not be equal. Therefore, the depletion time of the vapor deposition material in each source container is also different. When the vapor deposition material in a certain source container is depleted prematurely, the vapor deposition process stops, affecting the utilization rate of the vapor deposition material.

[0067] For example, when the vapor deposition material is a solid material (sublimable material), its physical properties cause the vapor deposition material to be unable to flow level in the source container. Regardless of whether it is an independent evaporation source or within a single evaporation source, the consumption of vapor deposition material in different heating zones may be different.

[0068] By obtaining the relative amounts of vapor deposition material consumed in different heating zones through a weight monitoring device, we can understand the consumption status of vapor deposition material and balance it by replenishing vapor deposition material in a timely manner or adjusting the power of the heater, which helps to ensure that the vapor deposition material in all parts of the vapor deposition device is depleted simultaneously.

[0069] In one exemplary embodiment of this disclosure, the adjusting mechanism is signal-connected to the weight monitoring mechanism. The adjusting mechanism can adjust the relative positional relationship between the second limiting plate 3 and the first limiting plate 2 based on feedback from the weight monitoring mechanism.

[0070] Specifically, when t > 0, m1 > m2, the remaining amount of vapor deposition material in the source container corresponding to the first heating zone is greater than that in the second heating zone. The adjustment mechanism can drive the second limiting plate 3 to tilt the side wall of the vapor deposition channel toward the second nozzle 52 / second evaporation source 42 (to the right in the figure), thereby increasing the vapor deposition rate of the second nozzle 52. Under the feedback adjustment of the deposition rate monitoring mechanism and the heater, the second heating element cools down relative to the first heating element (the first heating element heats up relative to the second heating element), thereby increasing the consumption rate of vapor deposition material in the source container corresponding to the first heating zone, which is beneficial for the vapor deposition material in the second heating zone to be exhausted at the same time.

[0071] Referring to the description of the aforementioned embodiments, the sidewall of the vapor deposition channel is inclined toward the second nozzle 52 / second evaporation source 42 (to the right in the figure). That is, when the first limiting plate 2 is located on the side of the second limiting plate 3 away from the vapor deposition port, the second limiting plate 3 moves toward the direction of the second heating zone; when the first limiting plate 2 is located on the side of the second limiting plate 3 close to the vapor deposition port, the second limiting plate 3 moves toward the direction of the first heating zone.

[0072] When t < 0, m1 < m2, the remaining amount of vapor deposition material in the source container corresponding to the first heating zone is less than that in the second heating zone. The adjustment mechanism can drive the second limiting plate 3 to tilt the side wall of the vapor deposition channel towards the first nozzle 51 / first evaporation source 41 (to the left in the figure), thereby increasing the vapor deposition rate of the first nozzle 51. Under the feedback adjustment of the deposition rate monitoring mechanism and the heater, the second heating element heats up relative to the first heating element (the first heating element cools down relative to the second heating element), thereby increasing the consumption rate of vapor deposition material in the source container corresponding to the second heating zone, which is beneficial for the vapor deposition material corresponding to the first heating zone to be exhausted at the same time.

[0073] Referring to the description of the aforementioned embodiments, the sidewall of the vapor deposition channel is inclined toward the first nozzle 51 / first evaporation source 41 (to the left in the figure). That is, when the first limiting plate 2 is located on the side of the second limiting plate 3 away from the vapor deposition port, the second limiting plate 3 moves toward the direction of the first heating zone; when the first limiting plate 2 is located on the side of the second limiting plate 3 close to the vapor deposition port, the second limiting plate 3 moves toward the direction of the second heating zone.

[0074] In one exemplary embodiment of this disclosure, the first limiting plate 2 is detachably fixedly connected to the crucible body 1. For example, the first limiting plate 2 is interference-fitted with the crucible body 1, or the first limiting plate 2 is assembled into a structure such as a groove inside the crucible body 1 to ensure that the first limiting plate 2 does not move with the movement of the second limiting plate 3 during the vapor deposition process. The first limiting plate 2 is detachably connected to the crucible body 1 so that the first limiting plate 2 can be replaced or repaired when the first limiting plate 2 is damaged or deformed due to high temperature, or when the first vapor deposition hole 201 is blocked due to the adhesion of vapor deposition material.

[0075] In one exemplary embodiment of this disclosure, the adjusting mechanism may include a transmission rod with its axis arranged along a first direction. One end of the transmission rod abuts against the second limiting plate 3, and the other end of the transmission rod extends out of the crucible body 1. Exemplarily, the transmission rod may be connected to the second limiting plate 3, and by moving the transmission rod along the first direction, the second limiting plate 3 can be moved relative to the first limiting plate 2.

[0076] In one exemplary embodiment of this disclosure, transmission rods are arranged in pairs at opposite ends of the second limiting plate 3 along a first direction, with the transmission rod on either side used to push the second limiting plate 3 to slide to the opposite side. Specifically, the end of the transmission rod that abuts against the second limiting plate 3 may not be connected to the second limiting plate 3. When the transmission rod on either side moves to the opposite side, it can push the second limiting plate 3 to move in the same direction. When the transmission rod moves away from the crucible body 1 and returns to its original position, it does not apply a force in the same direction to the second limiting plate 3. In some application scenarios, the internal temperature of the vapor deposition chamber is extremely high. Not connecting the end of the transmission rod that abuts against the second limiting plate 3 helps prevent damage to the connected parts at high temperatures, which could lead to failure of the adjustment mechanism.

[0077] In one exemplary embodiment of this disclosure, the adjustment mechanism further includes a drive motor, and the transmission rod is threadedly connected to the crucible body 1. By driving the transmission rod to rotate through the drive motor, the transmission rod can push the second limiting plate 3 to slide along the first direction.

[0078] For example, a swing arm can be provided at the end of the transmission rod that extends from the crucible body 1. A drive motor is used to drive the swing arm to reciprocate, so that the transmission rod pushes the second limiting plate 3 to slide along the first direction. The swing arm and reciprocating swing described in this disclosure refer to the drive motor driving the swing arm, thereby driving the transmission rod to rotate clockwise or counterclockwise through an angle within 360°. Specifically, the swing arm can be a handwheel, eccentric bolt, or other structure, as long as it can be connected to the drive motor to drive the transmission rod to rotate synchronously.

[0079] For example, as described in the foregoing embodiments, the adjustment mechanism may be provided in pairs at opposite ends of the second limiting plate 3 along the first direction.

[0080] According to one aspect of this disclosure, a vapor deposition system is also provided, including the vapor deposition apparatus described in any of the preceding embodiments. The vapor deposition system may further include a controller, which can be communicatively connected to the heater, deposition rate monitoring mechanism, weight monitoring mechanism, etc., in the aforementioned example embodiments to realize communication, calculation, and feedback control functions. The vapor deposition system may further include a displacement device for moving the entire vapor deposition apparatus to scan and form a film layer on the display panel. The vapor deposition system of this disclosure can adjust the second limiting plate 3 relative to the first limiting plate 2 by adjusting the mechanism to change the overlap area of ​​the first vapor deposition hole 201 and the second vapor deposition hole 301, causing the gaseous vapor deposition material to be ejected from the vapor deposition port at a specific angle, thereby achieving adjustment of the vapor deposition rate in different areas.

[0081] It should be noted that since the vapor deposition system includes the vapor deposition apparatus described above, and the structure and beneficial effects of the vapor deposition apparatus have been explained in detail in the previous topic, the structure and beneficial effects of the vapor deposition apparatus will not be repeated in this topic. You can refer to the specific description of the vapor deposition apparatus above, which is also within the protection scope of this disclosure.

[0082] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the appended claims.

Claims

1. A vapor deposition apparatus, characterized in that, include: The crucible body has a vapor deposition chamber and a vapor deposition port connecting the vapor deposition chamber to the outside. An evaporation source is provided in the vapor deposition chamber. The evaporation source includes a source container and a heater. The source container is located in the vapor deposition chamber and is used to hold the vapor deposition material. The heater is located on the outer periphery of the source container and is used to heat and vaporize the vapor deposition material. The heater includes a heating base plate located on the side of the source container away from the vapor deposition port. The heating base plate has a first heating zone and a second heating zone along a first direction. The first heating zone has a first heating element, and the second heating zone has a second heating element. Multiple evaporation sources are arranged along the first direction in the vapor deposition chamber. The source containers of each evaporation source are not connected. The evaporation source includes at least a first evaporation source located in the first heating zone, a second evaporation source located in the second heating zone, and a third evaporation source located between the first and second evaporation sources. A first limiting plate is disposed between the evaporation source and the vapor deposition port, and the first limiting plate has a through first vapor deposition hole; A second limiting plate is disposed between the evaporation source and the vapor deposition port. The second limiting plate has a through second vapor deposition hole. The first limiting plate and the second limiting plate are stacked in the depth direction of the vapor deposition chamber. The first vapor deposition hole and the second vapor deposition hole overlap to form a vapor deposition channel. The vapor deposition channel connects the evaporation source and the vapor deposition port. An adjustment mechanism is connected to the second limiting plate for sliding relative to the first limiting plate to change the overlapping area of ​​the first vapor deposition hole and the second vapor deposition hole. A weight monitoring mechanism, comprising a first pressure sensor and a second pressure sensor, wherein the first pressure sensor is disposed in the first heating zone and the second pressure sensor is disposed in the second heating zone, the weight monitoring mechanism is used to obtain the weight difference t of the vapor-deposited material in the source container located in the first heating zone and the source container located in the second heating zone, wherein when t > 0, the weight of the vapor-deposited material in the source container in the first heating zone is greater than that in the second heating zone; When t < 0, the weight of the vapor-deposited material in the source container of the second heating zone is greater than that in the first heating zone; The adjustment mechanism is signal-connected to the weight monitoring mechanism; the first limiting plate is located on the side of the second limiting plate away from the evaporation port; the adjustment mechanism is used to drive the second limiting plate to move closer to the second heating zone when t>0, and the adjustment mechanism is used to drive the second limiting plate to move closer to the first heating zone when t<0. Alternatively, the first limiting plate is disposed on the side of the second limiting plate near the vapor deposition port, and the adjustment mechanism is used to drive the second limiting plate to move towards the first heating zone when t>0, and the adjustment mechanism is used to drive the second limiting plate to move towards the second heating zone when t<0.

2. The vapor deposition apparatus according to claim 1, characterized in that, The vapor deposition apparatus includes a plurality of nozzles arranged along a first direction, the nozzles being connected to the vapor deposition port so that the gaseous vapor deposition material is discharged from the nozzles, the first direction being perpendicular to the depth direction of the vapor deposition chamber.

3. The vapor deposition apparatus according to claim 2, characterized in that, The nozzle includes at least a first nozzle, a second nozzle, and a third nozzle. The first nozzle's orthographic projection on the heating base plate is located within the first evaporation source. The second nozzle's orthographic projection on the heating base plate is located within the second evaporation source. The third nozzle's orthographic projection on the heating base plate is located within the third evaporation source. The number of first nozzles is greater than the number of third nozzles, and the number of second nozzles is greater than the number of third nozzles.

4. The vapor deposition apparatus according to claim 3, characterized in that, The vapor deposition apparatus further includes a deposition rate monitoring mechanism, which is used to monitor the deposition rate v1 of the first nozzle and the deposition rate v2 of the second nozzle. The plating rate monitoring mechanism is used to control the second heating element to heat up relative to the first heating element when v1 > v2; the plating rate monitoring mechanism is used to control the second heating element to cool down relative to the first heating element when v1 < v2.

5. The vapor deposition apparatus according to any one of claims 1 to 4, characterized in that, The adjustment mechanism includes a transmission rod, the axis of which is arranged along the first direction. One end of the transmission rod abuts against the second limiting plate, and the other end of the transmission rod extends out of the crucible body. The adjustment mechanism also includes a drive motor. The transmission rod is threadedly connected to the crucible body. One end of the transmission rod extending out of the crucible body is provided with a swing arm. The drive motor is used to drive the swing arm to swing back and forth, so that the transmission rod pushes the second limiting plate to slide along the first direction.

6. The vapor deposition apparatus according to claim 1, characterized in that, The heater includes a heating top plate located on the side of the first limiting plate away from the source container and on the side of the second limiting plate away from the source container.

7. A vapor deposition system, characterized in that, include: The vapor deposition apparatus according to any one of claims 1-6.

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