An atomic layer deposition coating method and system for high aspect ratio structure devices

Abstract

This application relates to the field of semiconductor manufacturing technology. This application provides an atomic layer deposition coating method and system for high aspect ratio structure devices. The system includes a reaction chamber, a vacuum pump connected to the reaction chamber, a pressurized gas pipeline, and a carrier gas pipeline; a first valve is provided on the connection pipeline between the reaction chamber and the vacuum pump, and a second valve is provided on the pressurized gas pipeline connected to the reaction chamber; a fifth valve is provided on the carrier gas pipeline, and the carrier gas pipeline is respectively connected to a first source bottle and a second source bottle storing reaction precursors. A third valve is provided on the connection pipeline between the first source bottle and the carrier gas pipeline, and a fourth valve is provided on the connection pipeline between the second source bottle and the carrier gas pipeline. By adjusting the opening and closing of the first valve and the second valve, the pressurized gas enters the reaction chamber, causing the pressure in the reaction chamber to increase and decrease, enabling the reaction precursors to quickly enter the deep holes / channels of the high aspect ratio structure devices and effectively adsorb within the high aspect ratio structure devices.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technologies, and in particular, to an atomic layer deposition coating method and system for high aspect ratio structure devices. Background Art

[0002] Atomic Layer Deposition (ALD) is a high-precision thin film deposition technology based on Chemical Vapor Deposition (CVD). Substances are deposited layer by layer on the surface of a substrate in the form of a single atomic layer based on chemical vapor. Specifically, two or more reaction precursor reactants are introduced into the reaction chamber one by one in sequence, adsorbed on the surface of the substrate, and each reaction precursor reaches saturated adsorption on the surface of the substrate. During the ALD deposition process, the reaction precursors are deposited alternately, and the chemical reaction of the new atomic layer is directly associated with the previous layer. Only one atomic layer is deposited in each reaction, and the ALD reaction has self-limiting properties.

[0003] During the atomic layer deposition process, when the reaction precursor reaches the surface of the deposition substrate, it will be deposited on the surface of the substrate. Between different reaction precursor pulses, an inert gas is also required to purge the reaction chamber to remove the excess reaction precursor that is not adsorbed on the surface of the substrate, ensuring that the chemical reaction only occurs on the surface of the substrate.

[0004] With the progress of technology, miniaturization is the trend of the microelectromechanical industry, and components with high aspect ratio structures are increasingly used and the demand is also increasing day by day. In the semiconductor field, a high aspect ratio micro-structure refers to a micro-structure with a depth formed on a silicon wafer or other substrate through processes such as photolithography combined with etching, and the aspect ratio is greater than 10. Usually, such structures are presented in the form of deep holes or deep grooves. Related technologies use the ALD method to deposit thin films on the surface of a substrate with a high aspect ratio structure. The reaction precursor cannot effectively diffuse into the interior of the high aspect ratio structure, resulting in the material not being able to completely fill into structures such as deep holes and channels, thereby seriously affecting the working efficiency of devices with high aspect ratio structures. Summary of the Invention

[0005] The present application provides an atomic layer deposition coating method and system for high aspect ratio structure devices to solve the problem that in the existing atomic layer deposition for thin film deposition on the surface of devices with high aspect ratio structures, the reaction precursor cannot effectively diffuse into the interior of the high aspect ratio structure.

[0006] In a first aspect, the present application provides an atomic layer deposition coating method for high aspect ratio structure devices, and the atomic layer deposition coating method includes:

[0007] Place the high aspect ratio structure device in the reaction chamber and pump the reaction chamber to a low vacuum state;

[0008] Introduce a first reaction precursor into the reaction chamber, and stop introducing the first reaction precursor when the introduction time of the first reaction precursor reaches a first time;

[0009] Perform a pressure increase and diffusion treatment on the reaction chamber, and stop the pressure increase and diffusion treatment and pump the reaction chamber back to a low vacuum state when the time of the pressure increase and diffusion treatment reaches a second time;

[0010] Introduce a second reaction precursor into the reaction chamber, and stop introducing the second reaction precursor when the introduction time of the second reaction precursor reaches a third time;

[0011] Perform a pressure increase and diffusion treatment on the reaction chamber, and stop the pressure increase and diffusion treatment and pump the reaction chamber back to a low vacuum state when the time of the pressure increase and diffusion treatment reaches a second time, completing the coating on the surface of the high aspect ratio structure device.

[0012] The reaction chamber in this application is connected with a pressurized gas pipeline. By adjusting the opening and closing of a first valve and a second valve, a pressurized gas is introduced into the reaction chamber, so that the pressure in the reaction chamber increases and decreases rapidly, and then the reaction precursor can quickly enter the deep holes / channels of the high aspect ratio structure device and be effectively adsorbed in the high aspect ratio structure device.

[0013] In some possible implementation manners, performing a pressure increase and diffusion treatment on the reaction chamber, and stopping the pressure increase and diffusion treatment and pumping the reaction chamber back to a low vacuum state when the time of the pressure increase and diffusion treatment reaches a second time includes:

[0014] Introduce a pressurized gas with a constant flow rate into the reaction chamber and at the same time stop evacuating the reaction chamber. Stop introducing the pressurized gas when the introduction time of the pressurized gas or the time of stopping evacuating the reaction chamber reaches a second time, and continue to evacuate the reaction chamber until the reaction chamber is pumped back to a low vacuum state;

[0015] Or,

[0016] Make the amount of pressurized gas introduced into the reaction chamber change in a reverse periodic manner with the amount of gas evacuated from the reaction chamber, and stop the reverse periodic change and pump the reaction chamber back to a low vacuum state when the time of the reverse periodic change reaches a second time.

[0017] In some possible implementation manners, the reaction chamber is respectively connected to a vacuum pump and a pressurized gas pipeline. A first valve is provided on the pipeline connecting the reaction chamber and the vacuum pump, and a second valve is provided on the pressurized gas pipeline connected to the reaction chamber. Wherein, when a pressurized gas with a constant flow rate is introduced into the reaction chamber and the vacuum pumping of the reaction chamber is stopped simultaneously, the first valve is closed and the second valve is opened. When the time for introducing the pressurized gas or the time for stopping the vacuum pumping of the reaction chamber reaches a second time, the first valve is opened and the second valve is closed, and the vacuum pump continues to pump the reaction chamber until the reaction chamber is pumped to a low vacuum state.

[0018] In some possible implementation manners, the reaction chamber is respectively connected to a vacuum pump and a pressurized gas pipeline. A first valve and a first butterfly valve are provided on the pipeline connecting the reaction chamber and the vacuum pump, and the first butterfly valve is located between the first valve and the reaction chamber. A second valve and a second butterfly valve are provided on the pressurized gas pipeline connected to the reaction chamber, and the second butterfly valve is located between the second valve and the reaction chamber. Wherein, when the amount of the pressurized gas introduced into the reaction chamber and the amount of the gas pumped out of the reaction chamber change in a reverse periodic manner, the first valve and the second valve are opened, and the opening degrees of the first butterfly valve and the second butterfly valve change in a reverse periodic manner. When the time of the reverse periodic change reaches a second time, the first valve and the second valve are opened, and the opening degrees of the first butterfly valve and the second butterfly valve stop changing in a reverse periodic manner.

[0019] In some possible implementation manners, the opening degrees of the first butterfly valve and the second butterfly valve changing in a reverse periodic manner includes:

[0020] The opening degree of the first butterfly valve changes from a preset opening degree to 0%, and then increases from 0% to the preset opening degree. The opening degree of the second butterfly valve changes from 0% to the preset opening degree, and then decreases from the preset opening degree to 0%.

[0021] In some possible implementation manners, when the reaction chamber is subjected to pressurized diffusion treatment, the opening degrees of the first butterfly valve and the second butterfly valve change in a continuous and synchronous reverse periodic manner. When the opening degree of the first butterfly valve decreases from the preset opening degree to 0%, the opening degree of the second butterfly valve increases from 0% to the preset opening degree. When the opening degree of the first butterfly valve increases from 0% to the preset opening degree, the opening degree of the second butterfly valve decreases from the preset opening degree to 0%.

[0022] In some possible implementation manners, when the time of the reverse periodic change reaches a second time, the opening degree of the first butterfly valve remains at the preset opening degree, the opening degree of the second butterfly valve remains at 0%, and the vacuum pump pumps the reaction chamber back to the low vacuum state.

[0023] The opening degrees of the first butterfly valve and the second butterfly valve in this application are controllable. By adjusting the opening degrees of the first butterfly valve and the second butterfly valve simultaneously, the reaction precursor can effectively enter the deep holes of the high aspect ratio structure device, and at the same time, the drawback that the reaction precursor is not fully diffused in the structure of the high aspect ratio structure device is effectively avoided, and the phenomenon that the reaction precursor cannot be fully deposited in the deep holes or channels of the high aspect ratio structure device is improved.

[0024] In some possible implementation manners, the reaction chamber is further connected with a carrier gas pipeline, a fifth valve is arranged on the carrier gas pipeline, the carrier gas pipeline is respectively connected with a first source bottle and a second source bottle, a first reaction precursor is stored in the first source bottle, a second reaction precursor is stored in the second source bottle, a third valve is arranged on the connecting pipeline between the first source bottle and the carrier gas pipeline, and a fourth valve is arranged on the connecting pipeline between the second source bottle and the carrier gas pipeline; when the high aspect ratio structure device is placed in the reaction chamber, the vacuum pump, the first valve, the second valve, the third valve, the fourth valve, and the fifth valve are closed; when the reaction chamber is pumped to a low vacuum state, the second valve, the third valve, and the fourth valve are closed, and the vacuum pump, the first valve, and the fifth valve are opened; when the first reaction precursor is introduced into the reaction chamber, the vacuum pump, the first valve, the third valve, and the fifth valve are opened, and the second valve and the fourth valve are closed; when the introduction time of the first reaction precursor reaches the first time, the vacuum pump, the first valve, and the fifth valve are opened, and the second valve, the third valve, and the fourth valve are closed; when the second reaction precursor is introduced into the reaction chamber, the vacuum pump, the first valve, the fourth valve, and the fifth valve are opened, and the second valve and the third valve are closed; when the introduction time of the second reaction precursor reaches the third time, the vacuum pump, the first valve, and the fifth valve are opened, and the second valve, the third valve, and the fourth valve are closed.

[0025] In some possible implementation manners, the reaction chamber is further connected with a carrier gas pipeline, a fifth valve is arranged on the carrier gas pipeline, the carrier gas pipeline is respectively connected with a first source bottle and a second source bottle, a first reaction precursor is stored in the first source bottle, a second reaction precursor is stored in the second source bottle, a third valve is arranged on the connecting pipeline between the first source bottle and the carrier gas pipeline, and a fourth valve is arranged on the connecting pipeline between the second source bottle and the carrier gas pipeline; when a high aspect ratio structure device is placed in the reaction chamber, the vacuum pump, the first valve, the second valve, the third valve, the fourth valve, and the fifth valve are closed, and the opening degrees of the first butterfly valve and the second butterfly valve are 0%; when the reaction chamber is pumped to a low vacuum state, the third valve and the fourth valve are closed, the vacuum pump, the first valve, the second valve, and the fifth valve are opened, the opening degree of the first butterfly valve is adjusted to a preset opening degree, and the opening degree of the second butterfly valve is 0%; when a first reaction precursor is introduced into the reaction chamber, the vacuum pump, the first valve, the second valve, the third valve, and the fifth valve are opened, the fourth valve is closed, the opening degree of the first butterfly valve is the preset opening degree, and the opening degree of the second butterfly valve is 0%; when the introduction time of the first reaction precursor reaches a first time, the vacuum pump, the first valve, the second valve, and the fifth valve are opened, the third valve and the fourth valve are closed, the opening degree of the first butterfly valve is the preset opening degree, and the opening degree of the second butterfly valve is 0%; when a second reaction precursor is introduced into the reaction chamber, the vacuum pump, the first valve, the second valve, the fourth valve, and the fifth valve are opened, the third valve is closed, the opening degree of the first butterfly valve is the preset opening degree, and the opening degree of the second butterfly valve is 0%; when the introduction time of the second reaction precursor reaches a third time, the vacuum pump, the first valve, the second valve, and the fifth valve are opened, the third valve and the fourth valve are closed, the opening degree of the first butterfly valve is the preset opening degree, and the opening degree of the second butterfly valve is 0%.

[0026] In some possible implementation manners, the preset opening degree is 70-90%.

[0027] In some possible implementation manners, the pressure in the reaction chamber under the low vacuum state is 1-2 torr, the pumping speed of the vacuum pump is 500-800m 3 / h, the gas flow rate of the carrier gas before passing through the fifth valve is 40-60 sccm, the first time is 0.1-10 s, the second time is 1-20 s, the third time is 0.1-15 s, and the gas flow rate of the pressurizing gas before passing through the second valve is 800-1500 sccm.

[0028] In some possible implementations, the pressurized gas or carrier gas is any one of nitrogen, argon, helium, and neon.

[0029] In a second aspect, the present application provides an atomic layer deposition coating system for a high aspect ratio structure device, which is used for the atomic layer deposition coating method described in the first aspect;

[0030] Wherein, the atomic layer deposition coating system includes:

[0031] A reaction chamber, a vacuum pump connected to the reaction chamber, a pressurized gas pipeline, and a carrier gas pipeline;

[0032] A first valve is provided on the connection pipeline between the reaction chamber and the vacuum pump, and a second valve is provided on the pressurized gas pipeline connected to the reaction chamber;

[0033] A fifth valve is provided on the carrier gas pipeline. The carrier gas pipeline is respectively connected to a first source bottle and a second source bottle. The first source bottle stores a first reaction precursor, and the second source bottle stores a second reaction precursor. A third valve is provided on the connection pipeline between the first source bottle and the carrier gas pipeline, and a fourth valve is provided on the connection pipeline between the second source bottle and the carrier gas pipeline. Wherein, the carrier gas pipeline is respectively connected to the first source bottle and the second source bottle storing the reaction precursors. The first source bottle stores the first reaction precursor, and the second source bottle stores the second reaction precursor.

[0034] In some possible implementations, a first butterfly valve is provided on the connection pipeline between the reaction chamber and the vacuum pump, and the first butterfly valve is located between the first valve and the reaction chamber;

[0035] A second butterfly valve is provided on the pressurized gas pipeline connected to the reaction chamber, and the second butterfly valve is located between the second valve and the reaction chamber; wherein, the opening degrees of the first butterfly valve and the second butterfly valve are controllable.

[0036] As can be seen from the above, the present application provides an atomic layer deposition coating method and system for high aspect ratio structure devices. The method includes placing the high aspect ratio structure device in a reaction chamber and pumping the reaction chamber to a low vacuum state; introducing a first reaction precursor into the reaction chamber, and stopping the introduction of the first reaction precursor when the introduction time of the first reaction precursor reaches a first time; performing a pressure increase and diffusion treatment on the reaction chamber, and stopping the pressure increase and diffusion treatment and pumping the reaction chamber back to the low vacuum state when the time of the pressure increase and diffusion treatment reaches a second time; introducing a second reaction precursor into the reaction chamber, and stopping the introduction of the second reaction precursor when the introduction time of the second reaction precursor reaches a third time; performing a pressure increase and diffusion treatment on the reaction chamber, and stopping the pressure increase and diffusion treatment and pumping the reaction chamber back to the low vacuum state when the time of the pressure increase and diffusion treatment reaches the second time, thereby completing the coating on the surface of the high aspect ratio structure device. Through the coordinated control of the first valve and the second valve, or the reverse periodic change of the opening degrees of the first butterfly valve and the second butterfly valve in the present application, the pressure in the reaction chamber is increased and decreased, so that the reaction precursor can quickly or effectively enter the deep holes / channels of the high aspect ratio structure device and be adsorbed in the high aspect ratio structure device. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative efforts.

[0038] Figure 1 Schematic diagram of a traditional atomic layer deposition coating system;

[0039] Figure 2 Schematic diagram for comparing the atomic layer deposition coating method provided by the present application with the atomic layer deposition method in the related art;

[0040] Figure 3 Schematic diagram of the atomic layer deposition coating system for high aspect ratio structure devices provided by the embodiment of the present application Figure 1 ;

[0041] Figure 4 Schematic diagram of the atomic layer deposition coating system for high aspect ratio structure devices provided by the embodiment of the present application Figure 2 ;

[0042] Figure 5 Flowchart of the atomic layer deposition coating method for high aspect ratio structure devices provided by the present application;

[0043] Figure 6 Curve graph of the chamber pressure of the reaction chamber in Embodiment 1 of the present application;

[0044] Figure 7SEM image of the deposition sample prepared in Example 1 of this application;

[0045] Figure 8 EDS energy spectrum analysis diagram of the deposition sample prepared in Example 1 of this application;

[0046] Figure 9 Chamber pressure curve graph of the reaction chamber in Example 2 of this application;

[0047] Figure 10 SEM image of the deposition sample prepared in Example 2 of this application;

[0048] Figure 11 EDS energy spectrum analysis diagram of the deposition sample prepared in Example 2 of this application;

[0049] Figure 12 Chamber pressure curve graph of the reaction chamber in Comparative Example 1 of this application;

[0050] Figure 13 SEM image of the deposition sample prepared in Comparative Example 1 of this application;

[0051] Figure 14 EDS energy spectrum analysis diagram of the deposition sample prepared in Comparative Example 1 of this application;

[0052] Figure 15 Chamber pressure curve graph of the reaction chamber in Example 3 of this application;

[0053] Figure 16 SEM image of the deposition sample prepared in Example 3 of this application;

[0054] Figure 17 EDS energy spectrum analysis diagram of the deposition sample prepared in Example 3 of this application;

[0055] Figure 18 Chamber pressure curve graph of the reaction chamber in Example 4 of this application;

[0056] Figure 19 SEM image of the deposition sample prepared in Example 4 of this application;

[0057] Figure 20 EDS energy spectrum analysis diagram of the deposition sample prepared in Example 4 of this application;

[0058] Figure 21 Chamber pressure curve graph of the reaction chamber in Comparative Example 2 of this application;

[0059] Figure 22 SEM image of the deposition sample prepared in Comparative Example 2 of this application;

[0060] Figure 23EDS energy spectrum analysis diagram of the deposited sample prepared in Comparative Example 2 of the present application;

[0061] Figure 24 Relationship diagram between the preset opening degree of the butterfly valve and the filling effect in Example 2 of the present application;

[0062] Figure 25 Relationship diagram between the preset opening degree of the butterfly valve and the filling effect in Example 4 of the present application. Detailed implementation manners

[0063] The embodiments will be described in detail below, and the examples are shown in the accompanying drawings. When the following description refers to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementation manners described in the following examples do not represent all implementation manners consistent with the present application.

[0064] Atomic Layer Deposition (ALD) is a high-precision thin film deposition technology based on Chemical Vapor Deposition (CVD). The material is deposited layer by layer on the surface of the substrate in the form of a single atomic layer based on chemical vapor. Specifically, two or more reaction precursors are introduced into the reaction chamber one by one, adsorbed on the surface of the substrate, and each reaction precursor reaches saturated adsorption on the surface of the substrate. During the ALD deposition process, the reaction precursors are deposited alternately, and the chemical reaction of the new atomic layer is directly related to the previous layer. Each reaction deposits only one atomic layer, and the ALD reaction has self-limiting properties.

[0065] During the atomic layer deposition process, when the reaction precursor reaches the surface of the deposition substrate, it will be deposited on the surface of the substrate. Between different reaction precursor pulses, an inert gas is also required to purge the reaction chamber to remove the excess reaction precursors that are not adsorbed on the surface of the substrate, ensuring that the chemical reaction only occurs on the surface of the substrate.

[0066] With the progress of technology, miniaturization is the trend of the microelectromechanical industry, and components with high aspect ratio structures are increasingly used and the demand is also increasing day by day. In the related technology, the ALD process is used to deposit on high aspect ratio structures, and the equipment used is as Figure 1 shown, including a vacuum pump, a reaction chamber, a first source bottle, a second source bottle, and a carrier gas pipeline. The first source bottle stores a first reaction precursor, and the second source bottle stores a second reaction precursor. The specific process of the ALD process is that the first reaction precursor and the second reaction precursor alternately enter the reaction chamber in the form of "pulse + purge". After completing the set number of cycle times, the reaction ends.

[0067] However, when depositing a thin film on the surface of a device with a high aspect ratio structure using the above ALD method, the first reaction precursor and the second reaction precursor cannot quickly and effectively diffuse into the device with a high aspect ratio structure, resulting in insufficient deposition in structures such as deep holes or trenches.

[0068] Based on this, the present application provides an atomic layer deposition coating method and system for a device with a high aspect ratio structure. The atomic layer deposition coating method adopts a combined mode of a boost diffusion process and an inert gas purge process. Through the coordinated control of a first valve and a second valve, or the opening degrees of a first butterfly valve and a second butterfly valve change periodically in the reverse direction, so that the pressure in the reaction chamber increases and decreases, effectively avoiding the drawback of insufficient diffusion of the reaction precursor on the surface of the device with a high aspect ratio structure and improving the phenomenon of insufficient deposition in structures such as deep holes or trenches. Figure 2 The figure shows a comparison schematic diagram of the atomic layer deposition coating method provided by the present application and the atomic layer deposition method in the related art. Figure 2 In (a), it is the natural diffusion process of the reaction precursor in the traditional ALD. Figure 2 In (b), it is the boost diffusion process of the reaction precursor mentioned in the present application. Among them, the inert gas purge process includes pumping the reaction chamber to a low vacuum state and a purge operation; Figure 2 The cleaning in it is the purge operation, and the pulse is the introduction of the first reaction precursor and / or the second reaction precursor.

[0069] As Figure 3 shown, in some embodiments, the present application provides an atomic layer deposition coating system for a device with a high aspect ratio structure. The atomic layer deposition coating system is used to implement an atomic layer deposition coating method for a device with a high aspect ratio structure. Among them, the atomic layer deposition coating system includes:

[0070] A reaction chamber, a vacuum pump connected to the reaction chamber, a pressurized gas pipeline, and a carrier gas pipeline;

[0071] A first valve V1 is provided on the connection pipeline between the reaction chamber and the vacuum pump, and a second valve V2 is provided on the pressurized gas pipeline connected to the reaction chamber; the first valve V1 is used to control the ability of the vacuum pump to evacuate the reaction chamber, and the second valve V2 is used to determine whether to introduce pressurized gas into the reaction chamber. The first valve V1 and the second valve V2 can be used to control the chamber pressure of the reaction chamber.

[0072] A fifth valve V5 is provided on the carrier gas pipeline. The carrier gas pipeline is respectively connected to a first source bottle and a second source bottle. A first reaction precursor is stored in the first source bottle, and a second reaction precursor is stored in the second source bottle. A third valve V3 is provided on the connecting pipeline between the first source bottle and the carrier gas pipeline, and a fourth valve V4 is provided on the connecting pipeline between the second source bottle and the carrier gas pipeline. Among them, the third valve V3, the fourth valve V4, and the fifth valve V5 are respectively used to control whether the first reaction precursor is introduced, whether the second reaction precursor is introduced, and whether the carrier gas is introduced.

[0073] In this embodiment, by adjusting the opening and closing of the first valve V1 and the second valve V2, the pressurized gas enters the reaction chamber, so that the pressure in the reaction chamber rapidly increases and decreases, and then the reaction precursor rapidly enters the deep holes / channels of the high aspect ratio structure device and is effectively adsorbed in the high aspect ratio structure device.

[0074] As Figure 4 shown, in some embodiments, the present application further provides an atomic layer deposition coating system for high aspect ratio structure devices. On the basis of the Figure 3 disclosed structure, a first butterfly valve V6 is provided on the connecting pipeline between the reaction chamber and the vacuum pump. The first butterfly valve V6 is located between the first valve V1 and the reaction chamber; a second butterfly valve V7 is provided on the pressurized gas pipeline connected to the reaction chamber. The second butterfly valve V7 is located between the second valve V2 and the reaction chamber; among them, the opening degrees of the first butterfly valve V6 and the second butterfly valve V7 are controllable; the first butterfly valve V6 and the second butterfly valve V7 are used to control the pressure in the reaction chamber to increase and decrease within a second time, so that the pressure in the reaction chamber is in dynamic change. The first butterfly valve V6 is used to control the air extraction volume of the vacuum pump, and the second butterfly valve V7 is used to control the flow rate of the pressurized gas introduced. After the reaction is completed, by closing the first valve V1, the air flow in the vacuum pump can be effectively prevented from flowing back into the reaction chamber, and by closing the second valve V2, the pressurized gas can be effectively prevented from entering the reaction chamber.

[0075] In the present application, the opening degrees of the first butterfly valve V6 and the second butterfly valve V7 are controllable. After the reaction precursor enters the reaction chamber, the opening degree of the first butterfly valve V6 and the opening degree of the second butterfly valve V7 change in a reverse periodic manner, so that the pressure in the reaction chamber increases and decreases, enabling the reaction precursor to effectively enter the deep holes of the high aspect ratio structure device, and at the same time effectively avoiding the drawback that the reaction precursor is not sufficiently diffused in the structure of the high aspect ratio structure device, and improving the phenomenon that the reaction precursor cannot be sufficiently deposited in the deep holes or channels and other structures of the high aspect ratio structure device. Figure 4 The atomic layer deposition coating system provided by the shown embodiment is the same during the pressurized diffusion treatment Figure 3The shown atomic layer deposition coating system is slower during the pressurization and diffusion process compared to the process of increasing or decreasing the pressure in the reaction chamber, but is still relatively fast compared to the prior art, that is, the increase in the pressure in the reaction chamber is slower, and the decrease in the pressure in the reaction chamber is slower.

[0076] As Figure 5 shown, in some embodiments, the present application also provides an atomic layer deposition coating method for high aspect ratio structure devices, and the method includes:

[0077] Placing the high aspect ratio structure device in the reaction chamber and pumping the reaction chamber to a low vacuum state;

[0078] Introducing a first reaction precursor into the reaction chamber, and stopping the introduction of the first reaction precursor when the introduction time of the first reaction precursor reaches a first time;

[0079] Performing a pressurization and diffusion process on the reaction chamber, stopping the pressurization and diffusion process when the time of the pressurization and diffusion process reaches a second time, and pumping the reaction chamber back to the low vacuum state;

[0080] Introducing a second reaction precursor into the reaction chamber, and stopping the introduction of the second reaction precursor when the introduction time of the second reaction precursor reaches a third time;

[0081] Performing a pressurization and diffusion process on the reaction chamber, stopping the pressurization and diffusion process when the time of the pressurization and diffusion process reaches a second time, and pumping the reaction chamber back to the low vacuum state to complete the coating on the surface of the high aspect ratio structure device.

[0082] In this atomic layer deposition coating method, performing a pressurization and diffusion process on the reaction chamber, stopping the pressurization and diffusion process when the time of the pressurization and diffusion process reaches a second time, and pumping the reaction chamber back to the low vacuum state includes:

[0083] Introducing a pressurization gas with a constant flow rate into the reaction chamber and simultaneously stopping the evacuation of the reaction chamber, stopping the introduction of the pressurization gas when the introduction time of the pressurization gas or the time of stopping the evacuation of the reaction chamber reaches a second time, and continuing to evacuate the reaction chamber until the reaction chamber is pumped back to the low vacuum state;

[0084] Or,

[0085] Making the amount of the pressurization gas introduced into the reaction chamber change periodically in the opposite direction to the amount of the gas evacuated from the reaction chamber, stopping the periodic change in the opposite direction when the time of the periodic change in the opposite direction reaches a second time, and pumping the reaction chamber back to the low vacuum state.

[0086] Due to different flow rates of the pressurization gas introduced (constant or periodically changing), the control process of the atomic layer deposition coating is also different, and the atomic layer deposition coating method is implemented corresponding to atomic layer deposition coating systems with different structures, which will be introduced separately below.

[0087] In some embodiments, the present application provides an atomic layer deposition coating method for high aspect ratio structure devices. This embodiment corresponds to Figure 3 the atomic layer deposition coating system for high aspect ratio structure devices in. When placing the high aspect ratio structure device in the reaction chamber, the reaction chamber door is opened, and at the same time, the vacuum pump, the first valve V1, the second valve V2, the third valve V3, the fourth valve V4, and the fifth valve V5 are closed; after the high aspect ratio structure device is placed in the reaction chamber, the reaction chamber door is closed, and at the same time, the second valve V2, the third valve V3, and the fourth valve V4 are closed, and the vacuum pump, the first valve V1, and the fifth valve V5 are opened to evacuate the reaction chamber; when introducing the first reaction precursor into the reaction chamber, the vacuum pump, the first valve V1, the third valve V3, and the fifth valve V5 are opened, and at the same time, the second valve V2 and the fourth valve V4 are closed; when the introduction time of the first reaction precursor reaches the first time, the vacuum pump, the first valve V1, and the fifth valve V5 are opened, and at the same time, the second valve V2, the third valve V3, and the fourth valve V4 are closed; when introducing the second reaction precursor into the reaction chamber, the vacuum pump, the first valve V1, the fourth valve V4, and the fifth valve V5 are opened, and at the same time, the second valve V2 and the third valve V3 are closed; when the introduction time of the second reaction precursor reaches the third time, the vacuum pump, the first valve V1, and the fifth valve V5 are opened, and at the same time, the second valve V2, the third valve V3, and the fourth valve V4 are closed.

[0088] For the convenience of clearly understanding the functions of each valve and for easy distinction, hereinafter, the first valve V1, the second valve V2, the third valve V3, the fourth valve V4, and the fifth valve V5 are respectively referred to as the vacuum angle valve V1, the booster valve V2, the source valve V3, the source valve V4, and the carrier gas valve V5.

[0089] The atomic layer deposition coating method provided in this embodiment includes:

[0090] S1: Place the high aspect ratio structure device in the reaction chamber and evacuate the reaction chamber to a low vacuum state. Among them, the structure of the high aspect ratio structure device is a high aspect ratio micro-nano structure. The pressure in the reaction chamber in the low vacuum state is 1 to 2 torr.

[0091] Among them, placing the high aspect ratio structure device in the reaction chamber and evacuating the reaction chamber to a low vacuum state includes:

[0092] Place the high aspect ratio structure device in the reaction chamber, introduce a carrier gas into the reaction chamber, and turn on the vacuum pump to evacuate the reaction chamber;

[0093] When the pressure value in the reaction chamber reaches the preset pressure value, introduce the first reaction precursor into the reaction chamber. The preset pressure value is 1 to 2 torr, and the pumping speed of the vacuum pump is 500 to 800 m 3 / h. The flow rate of the carrier gas before the carrier gas valve V5 is the same as the flow rate into the reaction chamber, both being 40 - 60 sccm.

[0094] Specifically, open the door of the wafer loading platform in the reaction chamber and place the high aspect ratio structure device. During this process, the vacuum pump, vacuum angle valve V1, booster valve V2, source valve V3, source valve V4, and carrier gas valve V5 are closed. It should be noted that when the carrier gas valve V5 is closed, the carrier gas in the carrier gas pipeline presses against the carrier gas valve V5; when the booster valve V2 is closed, the booster gas in the booster gas pipeline presses against the booster valve V2. After placing the high aspect ratio structure device, close the door of the wafer loading platform in the reaction chamber, and at the same time, turn on the vacuum pump to evacuate the reaction chamber. The carrier gas valve V5, the vacuum pump, and the vacuum angle valve V1 are opened. The pumping speed of the vacuum pump is 500 - 800 m 3 / h. The flow rate of the carrier gas is the same as described above. Evacuate the reaction chamber to a low vacuum state, and the pressure value of the reaction chamber is 1 - 2 torr. During this process, the booster valve V2 is closed, and the source valve V3 and source valve V4 are closed.

[0095] Among them, the carrier gas valve V5 and the vacuum pump are opened during evacuation and closed until the coating on the surface of the high aspect ratio structure device is completed.

[0096] S2: Introduce the first reaction precursor into the reaction chamber, and stop introducing the first reaction precursor when the introduction time of the first reaction precursor reaches the first time.

[0097] Specifically, after the reaction chamber reaches the low vacuum state, open the source valve V3 and introduce the first reaction precursor. When the introduction time of the first reaction precursor reaches the first time, close the source valve V3 and stop introducing the first reaction precursor. The first time is 0.1 - 10 s, and the source feeding mass of the first source bottle is determined according to the actual reaction precursor. During this process, the booster valve V2 is closed, the source valve V4 is closed, the vacuum angle valve V1 is opened, and the carrier gas valve V5 is opened. Exemplarily, when the first reaction precursor is TMA (trimethylaluminum), the TMA source feeding amount is 1 - 2 mg, and the first time is 0.1 - 2 s; when the first reaction precursor is Cu(acac)2 (copper acetylacetonate), the Cu(acac)2 source feeding amount is 1 - 3 mg, and the first time is 3 - 6 s.

[0098] S3: Introduce a booster gas with a constant flow rate into the reaction chamber and at the same time stop evacuating the reaction chamber. Stop introducing the booster gas when the introduction time of the booster gas or the time of stopping evacuating the reaction chamber reaches the second time, and continue to evacuate the reaction chamber until it is pumped back to the low vacuum state. In some embodiments, after evacuating the reaction chamber to the low vacuum state, a purging operation is also included. Among them, the inert gas purging process includes evacuating the reaction chamber to the low vacuum state and the purging operation. Among them, the purging operation time is 5 - 10 s.

[0099] Among them, when introducing pressurized gas with a constant flow rate into the reaction chamber and simultaneously stopping the evacuation of the reaction chamber, the operation of introducing the pressurized gas and the operation of stopping the evacuation of the reaction chamber are carried out simultaneously. That is, when the pressurizing valve V2 is opened, the vacuum angle valve V1 is closed. The time for introducing the pressurized gas and the time for stopping the evacuation of the reaction chamber are the same, both being the second time.

[0100] By adjusting the opening and closing of the vacuum angle valve V1 and the pressurizing valve V2, the pressurized gas enters the reaction chamber, causing the pressure in the reaction chamber to increase and decrease rapidly, and then enabling the reaction precursor to quickly enter the deep holes / channels of the high aspect ratio structure device and be effectively adsorbed within the high aspect ratio structure device.

[0101] In this embodiment, after each introduction of the reaction precursor gas, a large amount of pressurized gas is introduced, while maintaining the state that the vacuum pump continuously evacuates the reaction chamber, causing the pressure in the reaction chamber to increase and decrease rapidly, so that the reaction precursor can fully diffuse in the reaction chamber. Therefore, this process is called pressurized diffusion treatment; a pressurized diffusion treatment is performed each time the reaction precursor is introduced for deposition, that is, the atomic layer deposition coating method provided in this application includes multiple pressurized diffusion treatments. Taking the deposition of two reaction precursors as an example, the atomic layer deposition coating method includes two pressurized diffusion treatments; among them, the first pressurized diffusion treatment specifically includes:

[0102] When performing the first pressurized diffusion treatment, the pressurizing valve V2 is opened and the vacuum angle valve V1 is closed, and the pressurized gas is introduced. When the introduction time of the pressurized gas or the time for stopping the evacuation of the reaction chamber reaches the second time, the pressurizing valve V2 is closed and the vacuum angle valve V1 is opened, where the second time is 1 - 20 s. During this process, the source valve V3 and the source valve V4 remain closed, and the carrier gas valve V5 remains open. Among them, when the pressurizing valve V2 is opened, the maximum pressure in the reaction chamber can reach 1.5 - 2.0 torr.

[0103] After closing the pressurizing valve V2, the reaction chamber is evacuated back to the low vacuum state. Among them, the flow rate of the pressurized gas before passing through the pressurizing valve V2 is the same as the flow rate into the reaction chamber, both being 800 - 1500 sccm. Among them, the inert gas purging process includes evacuating the reaction chamber to the low vacuum state and the purging operation. Among them, the time for the purging operation is 5 - 10 s.

[0104] Exemplarily, the pressurized gas or the carrier gas is any one of nitrogen, argon, helium, and neon.

[0105] S4: Introduce the second reaction precursor into the reaction chamber, and stop introducing the second reaction precursor when the introduction time of the second reaction precursor reaches the third time.

[0106] Specifically, when the reaction chamber reaches the low vacuum state again, the source valve V4 is opened to introduce the second reaction precursor. When the introduction time of the second reaction precursor reaches the third time, the source valve V4 is closed to stop introducing the second reaction precursor. The third time is 0.1 - 15 s, and the source feeding mass of the second source bottle is determined according to the actual reaction precursor. During this process, the pressure boosting valve V2 is closed, the source valve V3 is closed, the vacuum angle valve V1 is opened, and the carrier gas valve V5 is opened. Exemplarily, when the second reaction precursor is H2O (liquid), the H2O source feeding amount is 1 - 3 mg, and the third time is 0.1 - 2 s; when the second reaction precursor is H2 (gas), the H2 source feeding amount is 3 - 6 L, and the third time is 5 - 15 s.

[0107] S5: Introduce a pressure boosting gas with a constant flow rate into the reaction chamber and simultaneously stop evacuating the reaction chamber. When the introduction time of the pressure boosting gas or the time of stopping evacuating the reaction chamber reaches the second time, stop introducing the pressure boosting gas and continue to evacuate the reaction chamber until the reaction chamber is evacuated back to the low vacuum state.

[0108] After introducing the second reaction precursor, introduce a pressure boosting gas for the second pressure boosting and diffusion treatment. The second pressure boosting and diffusion treatment specifically includes:

[0109] When performing the second pressure boosting and diffusion treatment, the pressure boosting valve V2 is opened and the vacuum angle valve V1 is closed to introduce the pressure boosting gas. When the introduction time of the pressure boosting gas or the time of stopping evacuating the reaction chamber reaches the second time, the pressure boosting valve V2 is closed and the vacuum angle valve V1 is opened to evacuate the reaction chamber to the low vacuum state; where the second time is 1 - 20 s. During this process, the source valve V3 and the source valve V4 remain closed, and the carrier gas valve V5 remains open.

[0110] When evacuating the reaction chamber to the low vacuum state, the pressure boosting valve V2, the source valve V3, and the source valve V4 remain closed during this process, and the vacuum pump, the vacuum angle valve V1, and the carrier gas valve V5 remain open. After the reaction chamber reaches the low vacuum state, the reaction chamber is also purged with an inert gas, and the purging time is 5 - 10 s.

[0111] Among them, steps S2 to S5 are one deposition cycle. According to the target thickness of the desired thin film, determine the number of deposition cycles, and repeat steps S2 to S5 until a thin film with the target thickness is obtained on the surface of the high aspect ratio structure device.

[0112] When the coating of the surface of the high aspect ratio structure device is completed, close the vacuum pump, the vacuum angle valve V1, the pressure boosting valve V2, the source valve V3, the source valve V4, and the carrier gas valve V5, and open the door of the wafer loading platform in the reaction chamber to take out the high aspect ratio structure device. In some embodiments, the number of deposition cycles is 100 - 200 times.

[0113] In this embodiment, after each introduction of the reaction precursor gas, a pressurizing gas is introduced, and at the same time, the vacuum pump is stopped from continuously evacuating the reaction chamber. By adjusting the opening and closing of the vacuum angle valve V1 and the pressurizing valve V2, the pressurizing gas enters the reaction chamber, causing the pressure in the reaction chamber to increase and decrease, so that the reaction precursor can quickly enter the deep holes / channels of the high aspect ratio structure device and be effectively adsorbed within the high aspect ratio structure device.

[0114] In some embodiments, the present application provides an atomic layer deposition coating method for a high aspect ratio structure device. This embodiment corresponds to Figure 4 the atomic layer deposition coating system for a high aspect ratio structure device. The atomic layer deposition coating system includes a reaction chamber, a vacuum pump connected to the reaction chamber, a pressurizing gas pipeline, and a carrier gas pipeline; a vacuum angle valve V1 is provided on the connecting pipeline between the reaction chamber and the vacuum pump, and a pressurizing valve V2 is provided on the pressurizing gas pipeline connected to the reaction chamber; after the reaction is completed, the vacuum angle valve V1 closes to effectively prevent the air flow in the vacuum pump from flowing back into the reaction chamber, and the pressurizing valve V2 can effectively prevent the pressurizing gas from entering the reaction chamber. A carrier gas valve V5 is provided on the carrier gas pipeline. The carrier gas pipeline is respectively connected to a first source bottle and a second source bottle. The first source bottle stores a first reaction precursor, and the second source bottle stores a second reaction precursor. A source valve V3 is provided on the connecting pipeline between the first source bottle and the carrier gas pipeline, and a source valve V4 is provided on the connecting pipeline between the second source bottle and the carrier gas pipeline. Among them, the source valve V3, the source valve V4, and the carrier gas valve V5 are respectively used to control whether the first reaction precursor is introduced, whether the second reaction precursor is introduced, and whether the carrier gas is introduced.

[0115] A first butterfly valve V6 is provided on the connecting pipeline between the reaction chamber and the vacuum pump. The first butterfly valve V6 is located between the vacuum angle valve V1 and the reaction chamber; a second butterfly valve V7 is provided on the pressurizing gas pipeline connected to the reaction chamber. The second butterfly valve V7 is located between the pressurizing valve V2 and the reaction chamber; among them, the opening degrees of the first butterfly valve V6 and the second butterfly valve V7 are controllable, and the opening degrees of the first butterfly valve V6 and the second butterfly valve V7 change in a reverse periodic manner; the first butterfly valve V6 and the second butterfly valve V7 are used to control the pressure in the reaction chamber to increase and decrease within a second time, so that the pressure in the reaction chamber is in a dynamic change. The first butterfly valve V6 is used to control the pumping volume of the vacuum pump, and the second butterfly valve V7 is used to control the flow rate of the pressurizing gas introduced.

[0116] When placing a high aspect ratio structure device in the reaction chamber, open the reaction chamber door. At the same time, the vacuum pump, vacuum angle valve V1, booster valve V2, source valve V3, source valve V4, and carrier gas valve V5 are closed, and the opening degrees of the first butterfly valve V6 and the second butterfly valve V7 are 0%. After the high aspect ratio structure device is placed in the reaction chamber, close the reaction chamber door. At the same time, the vacuum pump, vacuum angle valve V1, booster valve V2, and carrier gas valve V5 are opened, while the source valve V3 and the source valve V4 are closed. The opening degree of the first butterfly valve V6 is adjusted to a preset opening degree, and the opening degree of the second butterfly valve V7 is 0% to pump the reaction chamber to a low vacuum.

[0117] When the reaction chamber reaches a low vacuum state, introduce the first reaction precursor into the reaction chamber. At this time, the vacuum pump, vacuum angle valve V1, booster valve V2, source valve V3, and carrier gas valve V5 are opened, while the source valve V4 is closed at the same time. The opening degree of the first butterfly valve V6 is the preset opening degree, and the opening degree of the second butterfly valve V7 is 0%. When the introduction time of the first reaction precursor reaches the first time, the vacuum pump, vacuum angle valve V1, booster valve V2, and carrier gas valve V5 are opened, while the source valve V3 and the source valve V4 are closed at the same time. The opening degree of the first butterfly valve V6 is the preset opening degree, and the opening degree of the second butterfly valve V7 is 0%. When the amount of booster gas introduced into the reaction chamber and the amount of gas pumped out of the reaction chamber change in a reverse periodic manner, the vacuum pump, vacuum angle valve V1, booster valve V2, and carrier gas valve V5 are opened, while the source valve V3 and the source valve V4 are closed at the same time. The opening degrees of the first butterfly valve V6 and the second butterfly valve V7 change in a reverse periodic manner. When the opening degree of the first butterfly valve decreases from the preset opening degree to 0% and then increases from 0% to the preset opening degree, the opening degree of the second butterfly valve increases from 0% to the preset opening degree and then decreases from the preset opening degree to 0%. When the time of the reverse periodic change reaches the second time, the vacuum pump, vacuum angle valve V1, booster valve V2, and carrier gas valve V5 are opened, while the source valve V3 and the source valve V4 are closed at the same time. The opening degrees of the first butterfly valve V6 and the second butterfly valve V7 stop the reverse periodic change, that is, the opening degree of the first butterfly valve V6 remains at the preset opening degree, and the opening degree of the second butterfly valve V7 remains at 0%.

[0118] When pumping the reaction chamber to a low vacuum state, the vacuum pump, vacuum angle valve V1, booster valve V2, and carrier gas valve V5 are opened, while the source valve V3 and the source valve V4 are closed at the same time. The opening degree of the first butterfly valve V6 is the preset opening degree, and the opening degree of the second butterfly valve V7 is 0%. When introducing the second reaction precursor into the reaction chamber, the vacuum pump, vacuum angle valve V1, booster valve V2, source valve V4, and carrier gas valve V5 are opened, while the source valve V3 is closed at the same time. The opening degree of the first butterfly valve V6 is the preset opening degree, and the opening degree of the second butterfly valve V7 is 0%. When the introduction time of the second reaction precursor reaches the third time, the vacuum pump, vacuum angle valve V1, booster valve V2, and carrier gas valve V5 are opened, while the source valve V3 and the source valve V4 are closed at the same time. The opening degree of the first butterfly valve V6 is the preset opening degree, and the opening degree of the second butterfly valve V7 is 0%.

[0119] The atomic layer deposition coating method provided in this embodiment will not be elaborated on the same content as the atomic layer deposition coating method provided in the above embodiment. For the convenience of clearly understanding the functions of each valve and facilitating differentiation, hereinafter, the first butterfly valve V6 and the second butterfly valve V7 will be respectively referred to as the APC butterfly valve V6 and the APC butterfly valve V7.

[0120] The atomic layer deposition coating method provided in this embodiment includes:

[0121] S1’: Place the high aspect ratio structure device in the reaction chamber and evacuate the reaction chamber to a low vacuum state.

[0122] Specifically, open the door of the wafer loading platform in the reaction chamber and place the high aspect ratio structure device. During this process, the vacuum pump, vacuum angle valve V1, booster valve V2, source valve V3, source valve V4, and carrier gas valve V5 are closed, and the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7 are 0%. It should be noted that when the carrier gas valve V5 is closed, the carrier gas in the carrier gas pipeline presses against the carrier gas valve V5, and when the booster valve V2 is closed, the booster gas in the booster gas pipeline presses against the booster valve V2; after placing the high aspect ratio structure device, close the door of the wafer loading platform in the reaction chamber, and at the same time, turn on the vacuum pump to evacuate the reaction chamber. During this process, the carrier gas valve V5, vacuum pump, vacuum angle valve V1, and booster valve V2 are opened, the source valve V3 and source valve V4 are closed, and the opening degree of the APC butterfly valve V6 is adjusted to the preset opening degree, and the opening degree of the APC butterfly valve V7 is 0%. The pumping speed of the vacuum pump is 500 - 800 m 3 / h, the flow rate of the carrier gas before passing through the carrier gas valve V5 is the same as the flow rate into the reaction chamber, both are 40 - 60 sccm, evacuate the reaction chamber to a low vacuum state, the pressure value of the reaction chamber is 1 - 2 torr, and the flow rate of the booster gas before passing through the booster valve V2 is the same as the flow rate into the reaction chamber, and the booster gas flow rate is 800 - 1500 sccm.

[0123] Among them, the vacuum pump, vacuum angle valve V1, booster valve V2, and carrier gas valve V5 are opened during evacuation and closed until the coating of the surface of the high aspect ratio structure device is completed.

[0124] S2’: Introduce the first reaction precursor into the reaction chamber and stop introducing the first reaction precursor when the introduction time of the first reaction precursor reaches the first time.

[0125] Specifically, after the reaction chamber reaches a low vacuum state, the source valve V3 is opened to introduce the first reaction precursor. When the introduction time of the first reaction precursor reaches the first time, the source valve V3 is closed to stop introducing the first reaction precursor. The first time is 0.1 - 10 s, and the mass of the first source bottle feeding the source is determined according to the actual reaction precursor. During this process, the source valve V4 is closed, the opening degree of the APC butterfly valve V6 is the preset opening degree, and the opening degree of the APC butterfly valve V7 is 0%. Exemplarily, when the first reaction precursor is TMA (trimethylaluminum), the TMA feeding amount is 1 - 2 mg, and the first time is 0.1 - 2 s; when the first reaction precursor is Cu(acac)2 (copper acetylacetonate), the Cu(acac)2 feeding amount is 1 - 3 mg, and the first time is 3 - 6 s.

[0126] S3’: Make the amount of pressurized gas introduced into the reaction chamber change in a reverse periodic manner with the pumping amount of the reaction chamber. When the time of the reverse periodic change reaches the second time, stop the reverse periodic change and pump the reaction chamber back to the low vacuum state.

[0127] Wherein, the amount of pressurized gas is the flow rate of the pressurized gas before passing through the pressure increasing valve V2, and the pumping amount is the pumping amount of the vacuum pump.

[0128] When the amount of pressurized gas introduced into the reaction chamber changes in a reverse periodic manner with the pumping amount of the reaction chamber, the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7 change in a reverse periodic manner. When the time of the reverse periodic change reaches the second time, the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7 stop the reverse periodic change. During this process, the source valve V3 and the source valve V4 are closed. Among them, the second time is 1 - 20 s.

[0129] When the opening degree of the APC butterfly valve V6 decreases from the preset opening degree to 0%, and then increases from 0% to the preset opening degree, while the opening degree of the APC butterfly valve V7 increases from 0% to the preset opening degree, and then decreases from the preset opening degree to 0%, it is called a reverse periodic change. The time of a reverse periodic change is 1 - 20 s, that is, the second time. When the time of the reverse periodic change reaches the second time, the opening degree of the APC butterfly valve V6 remains at the preset opening degree, the opening degree of the APC butterfly valve V7 remains at 0%, and the vacuum pump pumps the reaction chamber back to the low vacuum state.

[0130] S31’: The opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7 change in a continuous and synchronous reverse periodic manner. When the opening degree of the APC butterfly valve V6 decreases from the preset opening degree to 0%, the opening degree of the APC butterfly valve V7 increases from 0% to the preset opening degree. When the opening degree of the APC butterfly valve V6 increases from 0% to the preset opening degree, the opening degree of the APC butterfly valve V7 decreases from the preset opening degree to 0%. Exemplarily, the preset opening degree is 70 - 90%.

[0131] When the opening of the APC butterfly valve V7 decreases, the flow rate of the pressurized gas through the pressure increasing valve V2 decreases; when the opening of the APC butterfly valve V7 increases, the flow rate of the pressurized gas through the pressure increasing valve V2 increases. Exemplarily, taking the preset opening as 80% as an example, the opening of the APC butterfly valve V6 decreases from 80% to 0% and then increases from 0% to 80%; the opening of the APC butterfly valve V7 increases from 0% to 80% and then decreases from 80% to 0%.

[0132] S32’: When the time of the reverse periodic change reaches the second time, the opening of the APC butterfly valve V6 is maintained at the preset opening, the opening of the APC butterfly valve V7 is maintained at 0%, and the vacuum pump pumps the reaction chamber back to the low vacuum state.

[0133] Specifically, when the time of the reverse periodic change reaches the second time, the opening of the APC butterfly valve V6 and the opening of the APC butterfly valve V7 stop the reverse periodic change, the opening of the APC butterfly valve V6 is maintained at the preset opening, the opening of the APC butterfly valve V7 is maintained at 0%, and at the same time the reaction chamber is pumped back to the low vacuum state.

[0134] In some embodiments, after pumping the reaction chamber to the low vacuum state, a purging operation is further included. Among them, the inert gas purging process includes pumping the reaction chamber to the low vacuum state and the purging operation. The purging operation is specifically purging the reaction chamber with inert gas. Among them, the purging time is 5 - 10 s.

[0135] S4’: Introduce the second reaction precursor into the reaction chamber, and stop introducing the second reaction precursor when the introduction time of the second reaction precursor reaches the third time.

[0136] Specifically, when the vacuum pump pumps the reaction chamber back to the low vacuum state, the source valve V4 is opened to introduce the second reaction precursor. When the introduction time of the second reaction precursor reaches the third time, the source valve V4 is closed to stop introducing the second reaction precursor. The third time is 0.1 - 15 s, and the source mass of the second source bottle is determined according to the actual reaction precursor. During this process, the source valve V3 is closed, the opening of the APC butterfly valve V6 is the preset opening, and the opening of the APC butterfly valve V7 is 0%. Exemplarily, when the second reaction precursor is H2O (liquid), the H2O source amount is 1 - 3 mg, and the third time is 0.1 - 2 s; when the second reaction precursor is H2 (gas), the H2 source amount is 3 - 6 L, and the third time is 5 - 15 s.

[0137] S5’: Make the amount of the pressurized gas introduced into the reaction chamber and the amount of the gas pumped out of the reaction chamber change in a reverse periodic manner, and stop the reverse periodic change and pump the reaction chamber back to the low vacuum state when the time of the reverse periodic change reaches the second time.

[0138] When the amount of pressurized gas introduced into the reaction chamber and the amount of gas pumped out of the reaction chamber change periodically in the opposite direction, the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7 change continuously and synchronously in the opposite direction. When the time of the reverse periodic change reaches the second time, the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7 stop changing in the reverse periodic manner. During this process, the source valves V3 and V4 are closed. Herein, the second time is 1 to 20 s.

[0139] When the time of the reverse periodic change reaches the second time, the opening degree of the APC butterfly valve V6 is maintained at the preset opening degree, and the opening degree of the APC butterfly valve V7 is maintained at 0%. The vacuum pump pumps the reaction chamber back to the low vacuum state.

[0140] S51’: The opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7 change periodically in the opposite direction. When the opening degree of the APC butterfly valve V6 decreases from the preset opening degree to 0%, the opening degree of the APC butterfly valve V7 increases from 0% to the preset opening degree. When the opening degree of the APC butterfly valve V6 increases from 0% to the preset opening degree, the opening degree of the APC butterfly valve V7 decreases from the preset opening degree to 0%. Exemplarily, the preset opening degree is 70 to 90%.

[0141] When the opening degree of the APC butterfly valve V7 decreases, the flow rate of the pressurized gas after passing through the pressurizing valve V2 decreases; when the opening degree of the APC butterfly valve V7 increases, the flow rate of the pressurized gas after passing through the pressurizing valve V2 increases. Exemplarily, taking the preset opening degree of 80% as an example, the opening degree change range of the APC butterfly valve V6 is from 80% to 0%, and then from 0% to 80%; the opening degree change range of the APC butterfly valve V7 is from 0% to 80%, and then from 80% to 0%.

[0142] S52’: When the time of the reverse periodic change reaches the second time, the opening degree of the APC butterfly valve V6 is maintained at the preset opening degree, and the opening degree of the APC butterfly valve V7 is maintained at 0%. The vacuum pump pumps the reaction chamber back to the low vacuum state.

[0143] Specifically, when the time of the reverse periodic change reaches the second time, the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7 stop changing in the reverse periodic manner, the opening degree of the APC butterfly valve V6 is maintained at the preset opening degree, the opening degree of the APC butterfly valve V7 is maintained at 0%, and at the same time, the reaction chamber is pumped back to the low vacuum state. After the reaction chamber reaches the low vacuum state, the reaction chamber is also purged with inert gas, and the purging time is 5 to 10 s.

[0144] Among them, steps S2’ to S5’ are one deposition cycle. According to the target thickness of the required thin film, the number of deposition cycles is determined, and steps S2’ to S5’ are repeatedly executed until a thin film with the target thickness is obtained on the surface of the high aspect ratio structure device.

[0145] When the coating of the surface of the high aspect ratio structure device is completed, turn off the vacuum pump, close the vacuum angle valve V1, close the booster valve V2, close the source valves V3, V4, and the carrier gas valve V5. The opening degrees of the APC butterfly valves V6 and V7 are 0%. Open the door of the wafer loading platform in the reaction chamber and take out the high aspect ratio structure device. In some embodiments, the number of deposition cycles is 100 - 200 times.

[0146] The opening degrees of the APC butterfly valves V6 and V7 in the present application are controllable. After the reaction precursor enters the reaction chamber, the opening degrees of the APC butterfly valves V6 and V7 are adjusted. The pressure in the reaction chamber increases and decreases, and the opening degrees of the APC butterfly valves V6 and V7 change periodically in the opposite direction, enabling the reaction precursor to effectively enter the deep holes of the high aspect ratio structure device. At the same time, it effectively avoids the drawback that the reaction precursor diffuses insufficiently in the structure of the high aspect ratio structure device, and improves the phenomenon that the reaction precursor cannot be fully deposited in the deep holes or channels of the high aspect ratio structure device.

[0147] The following will be described in detail with specific cases.

[0148] In the following embodiments, the structure of the high aspect ratio structure device used is a deep hole structure with an aspect ratio of 300:1. The booster gas or carrier gas used in the following embodiments is any one of nitrogen, argon, helium, and neon. The pumping speed of the vacuum pump, the flow rate of the carrier gas, and the pressure value for pumping the reaction chamber to a low vacuum state are the same in the following embodiments, and the same parameters are maintained during the deposition of the high aspect ratio structure device.

[0149] Example 1

[0150] In this embodiment, the first reaction precursor is TMA (trimethylaluminum), and the second reaction precursor is H2O. The system device used in this embodiment is connected as Figure 3 shown, and the flow rate of the booster gas introduced in this embodiment is constant.

[0151] (1). Open the door of the wafer loading platform in the reaction chamber and place the high aspect ratio structure device. During this process, the vacuum pump, the vacuum angle valve V1, the booster valve V2, the source valves V3, V4, and the carrier gas valve V5 are closed; after placing the high aspect ratio structure device, close the door of the wafer loading platform in the reaction chamber, and at the same time, turn on the vacuum pump to evacuate the reaction chamber. At the same time, open the carrier gas valve V5, the vacuum pump, and the vacuum angle valve V1, and close the booster valve V2, the source valves V3, V4. The pumping speed of the vacuum pump is 600m 3 / h, the flow rate of the carrier gas is 40 sccm, the reaction chamber is pumped down to a low vacuum state, and the pressure value of the reaction chamber is 1 torr. When the carrier gas valve V5 is closed, the carrier gas in the carrier gas pipeline presses against the carrier gas valve V5. When the booster valve V2 is closed, the booster gas in the booster gas pipeline presses against the booster valve V2. Among them, the vacuum pump is turned on during the vacuum pumping operation of the reaction chamber and turned off until the coating of the surface of the high aspect ratio structure device is completed.

[0152] (2) When the reaction chamber reaches the low vacuum state, the source valve V3 is opened to introduce the first reaction precursor. When the introduction time of the first reaction precursor reaches the first time, the source valve V3 is closed to stop introducing the first reaction precursor. Among them, the first time is 0.2 s, and the source mass of the first source bottle is 1.5 mg. During this process, the booster valve V2 is closed, the source valve V4 is closed, the vacuum angle valve V1 is opened, the carrier gas valve V5 is opened, and the vacuum pump is opened.

[0153] (3) When performing the pressure boosting and diffusion treatment, when a constant flow of booster gas is introduced into the reaction chamber and the vacuum pumping of the reaction chamber is stopped at the same time, the booster valve V2 is opened, the vacuum angle valve V1 is closed, and the booster gas is introduced. When the introduction time of the booster gas or the time of stopping the vacuum pumping of the reaction chamber reaches the second time, the introduction of the booster gas is stopped, the booster valve V2 is closed, and the vacuum angle valve V1 is opened to pump the reaction chamber down to the low vacuum state; among them, the second time is 5 s, and the flow rate of the introduced booster gas is 1000 sccm. During this process, the source valves V3 and V4 remain closed, and the carrier gas valve V5 remains open.

[0154] When the reaction chamber is pumped down to the low vacuum state, the carrier gas valve V5, the vacuum pump, and the vacuum angle valve V1 are opened. At this time, the booster valve V2 is closed, and the source valves V3 and V4 are closed. After the reaction chamber reaches the low vacuum state, the reaction chamber is also purged with inert gas for 8 s.

[0155] (4) After the purging is completed, the source valve V4 is opened to introduce the second reaction precursor. When the introduction time of the second reaction precursor reaches the third time, the source valve V4 is closed to stop introducing the second reaction precursor; among them, the third time is 0.2 s, and the source mass of the second source bottle is 1.5 mg. During this process, the booster valve V2 is closed, the source valve V3 is closed, the vacuum pump is opened, the vacuum angle valve V1 is opened, and the carrier gas valve V5 is opened.

[0156] (5) When performing the pressure-boosting diffusion process, when introducing a pressure-boosting gas with a constant flow rate into the reaction chamber and simultaneously stopping evacuating the reaction chamber, the pressure-boosting valve V2 is opened, and the vacuum angle valve V1 is closed to introduce the pressure-boosting gas. When the introduction time of the pressure-boosting gas or the time of stopping evacuating the reaction chamber reaches the second time, stop introducing the pressure-boosting gas, close the pressure-boosting valve V2, and open the vacuum angle valve V1 to evacuate the reaction chamber to a low vacuum state; where the second time is 5 s, and the flow rate of the introduced pressure-boosting gas is 1000 sccm. During this process, the source valves V3 and V4 remain closed, and the carrier gas valve V5 remains open.

[0157] When evacuating the reaction chamber to a low vacuum state, during this process, the pressure-boosting valve V2, the source valves V3 and V4 remain closed, and the vacuum pump, the vacuum angle valve V1, and the carrier gas valve V5 remain open. When the reaction chamber reaches the low vacuum state, the reaction chamber is also purged with an inert gas for 8 s.

[0158] Among them, steps (2) to (5) are one deposition cycle.

[0159] After 150 deposition cycles, close the vacuum pump, close the vacuum angle valve V1, close the pressure-boosting valve V2, close the source valves V3 and V4, close the carrier gas valve V5, open the door of the wafer loading platform in the reaction chamber to take out the high aspect ratio structure device, and an Al2O3 (aluminum oxide) film is deposited on the high aspect ratio structure device. As Figure 6 shown is the cavity pressure curve graph of the reaction chamber in this embodiment, where t1 is the first time, t2 is the second time, t3 is the purging time, t4 is the third time, t5 is the second time, and t6 is the purging time. Perform SEM and EDS energy spectrum analysis on the high aspect ratio structure device, as Figure 7 and Figure 8 shown.

[0160] Example 2

[0161] In this embodiment, the first reaction precursor is TMA, the second reaction precursor is H2O, and the system device used in this embodiment is connected as Figure 4 shown, and in this embodiment, the amount of the pressure-boosting gas introduced into the reaction chamber and the amount of gas evacuated from the reaction chamber change periodically in the opposite direction.

[0162] (1) Open the door of the wafer loading platform in the reaction chamber and place the high aspect ratio structure device. During this process, the vacuum pump, the vacuum angle valve V1, the pressure-boosting valve V2, the source valves V3 and V4, and the carrier gas valve V5 are closed, and the opening degrees of the APC butterfly valves V6 and V7 are 0%. When the carrier gas valve V5 is closed, the carrier gas in the carrier gas pipeline pushes against the carrier gas valve V5. When the pressure-boosting valve V2 is closed, the pressure-boosting gas in the pressure-boosting gas pipeline pushes against the pressure-boosting valve V2.

[0163] After placing the high aspect ratio structure device, close the door of the wafer loading platform in the reaction chamber. At the same time, turn on the vacuum pump, vacuum angle valve V1, booster valve V2, and carrier gas valve V5. The pumping speed of the vacuum pump is 600 m 3 / h, the flow rate of the carrier gas is 40 sccm, and the flow rate of the booster gas is 1000 sccm. Pump the reaction chamber to a low vacuum state, and the pressure value of the reaction chamber is 1 torr. At this time, source valve V3 and source valve V4 are closed, the opening degree of APC butterfly valve V6 is 80% (preset opening degree), and the opening degree of APC butterfly valve V7 is 0%.

[0164] Among them, the vacuum pump, vacuum angle valve V1, booster valve V2, and carrier gas valve V5 are turned on during vacuum pumping and closed until the coating of the surface of the high aspect ratio structure device is completed.

[0165] (2) When the reaction chamber reaches the low vacuum state, open source valve V3 and introduce the first reaction precursor. When the introduction time of the first reaction precursor reaches the first time, close source valve V3 and stop introducing the first reaction precursor. The first time is 0.2 s, and the source mass is 1.5 mg. During this process, source valve V4 is closed, the opening degree of APC butterfly valve V6 is 80% (preset opening degree), and the opening degree of APC butterfly valve V7 is 0%.

[0166] (3) When the amount of booster gas introduced into the reaction chamber and the amount of gas pumped out of the reaction chamber change in a reverse periodic manner, the opening degrees of APC butterfly valve V6 and APC butterfly valve V7 change in a reverse periodic manner. The opening degree of APC butterfly valve V6 decreases from 80% (preset opening degree) to 0%, and then increases from 0% to 80% (preset opening degree). The opening degree of APC butterfly valve V7 increases from 0% to 80% (preset opening degree), and then decreases from 80% (preset opening degree) to 0%. When the reverse periodic change time reaches the second time, the opening degrees of APC butterfly valve V6 and APC butterfly valve V7 stop the reverse periodic change, keep the opening degree of APC butterfly valve V6 at 80% (preset opening degree), keep the opening degree of APC butterfly valve V7 at 0%, and at the same time pump the reaction chamber back to the low vacuum state. During this process, source valve V3 and source valve V4 are closed. Among them, the second time is 5 s.

[0167] When pumping the reaction chamber to the low vacuum state, source valve V3 and source valve V4 are closed, the opening degree of APC butterfly valve V6 is 80% (preset opening degree), and the opening degree of APC butterfly valve V7 is 0%. After the reaction chamber reaches the low vacuum state, the reaction chamber is also purged with inert gas, and the purging time is 8 s.

[0168] (4) After the purging is completed, the source valve V4 is opened to introduce the second reaction precursor. When the introduction time of the second reaction precursor reaches the third time, the source valve V4 is closed to stop introducing the second reaction precursor. The third time is 0.2 s, and the introduced mass is 1.5 mg. During this process, the source valve V3 is closed, the opening degree of the APC butterfly valve V6 is 80% (preset opening degree), and the opening degree of the APC butterfly valve V7 is 0%.

[0169] (5) When the amount of pressurized gas introduced into the reaction chamber and the amount of gas pumped out of the reaction chamber change periodically in the opposite direction, the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7 change periodically in the opposite direction. The opening degree of the APC butterfly valve V6 decreases from 80% (preset opening degree) to 0%, and then increases from 0% to 80% (preset opening degree). The opening degree of the APC butterfly valve V7 increases from 0% to 80% (preset opening degree), and then decreases from 80% (preset opening degree) to 0%. When the time of the reverse periodic change reaches the second time, the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7 stop the reverse periodic change. The opening degree of the APC butterfly valve V6 is maintained at 80% (preset opening degree), and the opening degree of the APC butterfly valve V7 is maintained at 0%. At the same time, the reaction chamber is pumped back to the low vacuum state. During this process, the source valve V3 and the source valve V4 are closed. Among them, the second time is 5 s. After the reaction chamber reaches the low vacuum state, the reaction chamber is also purged with inert gas, and the purging time is 8 s.

[0170] Among them, steps (2) to (5) are one deposition cycle.

[0171] After 150 deposition cycles, the vacuum pump is turned off, the vacuum angle valve V1 is closed, the pressurizing valve V2 is closed, the source valves V3 and V4, and the carrier gas valve V5 are closed. The opening degrees of the APC butterfly valves V6 and V7 are 0%. The door of the wafer loading platform in the reaction chamber is opened to take out the high aspect ratio structure device, and an Al2O3 (aluminum oxide) film is deposited on the high aspect ratio structure device. As Figure 9 shown is the chamber pressure curve graph of the reaction chamber in this embodiment, where t1 is the first time, t2 is the second time, t3 is the purging time, t4 is the third time, t5 is the second time, and t6 is the purging time. SEM and EDS energy spectrum analysis are performed on the high aspect ratio structure device, as Figure 10 and Figure 11 shown.

[0172] Comparative Example 1

[0173] In this embodiment, the first reaction precursor is TMA, the second reaction precursor is H2O, and the device used in this embodiment is Figure 1 shown.

[0174] (1) Open the door of the wafer loading platform in the reaction chamber and place the high aspect ratio structure device. During this process, the vacuum pump, vacuum angle valve V1, carrier gas valve V5, source valve V3, and source valve V4 are closed. After placing the high aspect ratio structure device, close the door of the wafer loading platform in the reaction chamber, and at the same time, turn on the vacuum pump to evacuate the reaction chamber. At the same time, open the vacuum pump, vacuum angle valve V1, and carrier gas valve V5, while source valve V3 and source valve V4 are closed. The pumping speed of the vacuum pump is 600 m 3 / h, and the flow rate of the carrier gas is 40 sccm. Evacuate the reaction chamber to a low vacuum state, and the pressure value of the reaction chamber is 1 torr.

[0175] (2) When the reaction chamber reaches the low vacuum state, open source valve V3 and introduce the first reaction precursor. When the introduction time of the first reaction precursor reaches the first time, close source valve V3 and stop introducing the first reaction precursor. The first time is 0.2 s, and the source feeding mass of the first source bottle is 1.5 mg. During this process, source valve V4 is closed, vacuum angle valve V1 is open, carrier gas valve V5 is open, and the vacuum pump is open.

[0176] When evacuating the reaction chamber to the low vacuum state, carrier gas valve V5, the vacuum pump, and vacuum angle valve V1 are open. At this time, source valve V3 and source valve V4 are closed. When the reaction chamber reaches the low vacuum state, also purge the reaction chamber with inert gas, and the purge time is 8 s.

[0177] (3) After the purge is completed, open source valve V4 and introduce the second reaction precursor. When the introduction time of the second reaction precursor reaches the third time, close source valve V4 and stop introducing the second reaction precursor. The third time is 0.2 s, and the source feeding mass of the second source bottle is 1.5 mg. During this process, source valve V3 is closed, the vacuum pump is open, vacuum angle valve V1 is open, and carrier gas valve V5 is open.

[0178] When evacuating the reaction chamber to the low vacuum state, source valve V3 and source valve V4 remain closed during this process, and the vacuum pump, vacuum angle valve V1, and carrier gas valve V5 remain open. After the reaction chamber reaches the low vacuum state, also purge the reaction chamber with inert gas, and the purge time is 8 s.

[0179] Among them, steps (2) to (3) are one deposition cycle.

[0180] After 150 depositions, close the vacuum pump, close vacuum angle valve V1, close source valve V3, close source valve V4, close carrier gas valve V5, open the door of the wafer loading platform in the reaction chamber, and take out the high aspect ratio structure device. An Al2O3 (aluminum oxide) film is deposited on this high aspect ratio structure device. As Figure 12The following is the chamber pressure curve graph of the reaction chamber of this embodiment, where t1 is the first time, t2 is the purge time, t3 is the third time, and t4 is the purge time. SEM and EDS energy spectrum analysis diagrams of this device are as shown in Figure 13 and Figure 14 as shown.

[0181] Combined with Figures 6 to 14 it can be known that in Comparative Example 1, the traditional atomic layer deposition coating method is used to deposit the deep hole structure of the high aspect ratio structure device. From Figure 13 and Figure 14 it can be known that as the depth increases, the Al element can no longer be detected, and Al2O3 fails to completely fill the deep hole structure of the high aspect ratio structure device. In Example 1, the deposition of the deep hole structure of the high aspect ratio structure device is achieved by adjusting the opening and closing of the vacuum angle valve V1 and the booster valve V2. From Figure 7 and Figure 8 it can be known that although the Al element still fails to completely fill the deep hole structure of the high aspect ratio structure device, there is a significant improvement compared with Comparative Example 1. In Example 2, the deposition of the deep hole structure of the high aspect ratio structure device is achieved by adjusting the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7. From Figure 10 and Figure 11 it can be known that the Al element has completely filled the deep hole structure of the high aspect ratio structure device, and the compactness is good.

[0182] Among them, the reaction parameters in Example 1 and Example 2 are the same. The difference is that on the basis of Example 1, Example 2 is additionally provided with the APC butterfly valve V6 and the APC butterfly valve V7. The opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7 change in a reverse periodic manner, so that the reaction precursor can effectively enter the deep holes of the high aspect ratio structure device, and at the same time effectively avoid the drawback that the reaction precursor diffuses insufficiently in the structure of the high aspect ratio structure device, and improve the phenomenon that the reaction precursor cannot be fully deposited in the deep holes or channels and other structures of the high aspect ratio structure device.

[0183] Example 3

[0184] In this embodiment, the first reaction precursor is Cu(acac)2 (copper acetylacetonate), and the second reaction precursor is H2. The system device used in this embodiment is connected as shown in Figure 3 as shown, and the flow rate of the pressurized gas introduced in this embodiment is constant.

[0185] (1). Open the door of the wafer loading platform in the reaction chamber and place the high aspect ratio structure device. During this process, the vacuum pump, the vacuum angle valve V1, the booster valve V2, the source valve V3, the source valve V4, and the carrier gas valve V5 are closed; when the carrier gas valve V5 is closed, the carrier gas in the carrier gas pipeline pushes against the carrier gas valve V5, and when the booster valve V2 is closed, the pressurized gas in the pressurized gas pipeline pushes against the booster valve V2.

[0186] After placing the high aspect ratio structure device, close the door of the wafer loading platform in the reaction chamber. At the same time, turn on the vacuum pump to evacuate the reaction chamber. Meanwhile, open the carrier gas valve V5, the vacuum pump, and the vacuum angle valve V1, and close the booster valve V2, the source valve V3, and the source valve V4. The pumping speed of the vacuum pump is 600 m 3 / h, and the flow rate of the carrier gas is 40 sccm. Evacuate the reaction chamber to a low vacuum state, and the pressure value of the reaction chamber is 1 torr. Among them, the carrier gas valve V5 and the vacuum pump are opened during the evacuation operation of the reaction chamber and are closed until the coating of the surface of the high aspect ratio structure device is completed.

[0187] (2) When the reaction chamber reaches the low vacuum state, open the source valve V3 and introduce the first reaction precursor. When the introduction time of the first reaction precursor reaches the first time, close the source valve V3 and stop introducing the first reaction precursor. The first time is 5 s, and the source mass of the first source bottle is 2 mg. During this process, the booster valve V2 is closed, the source valve V4 is closed, the vacuum angle valve V1 is opened, the carrier gas valve V5 is opened, and the vacuum pump is opened.

[0188] (3) When performing the pressure boosting and diffusion treatment, when introducing a constant flow of pressure boosting gas into the reaction chamber and simultaneously stopping evacuating the reaction chamber, open the booster valve V2 and close the vacuum angle valve V1 to introduce the pressure boosting gas. When the introduction time of the pressure boosting gas or the time of stopping evacuating the reaction chamber reaches the second time, stop introducing the pressure boosting gas, close the booster valve V2, and open the vacuum angle valve V1 to evacuate the reaction chamber to the low vacuum state; among them, the second time is 5 s, and the flow rate of the introduced pressure boosting gas is 1000 sccm. During this process, the source valve V3 and the source valve V4 remain closed, and the carrier gas valve V5 remains open.

[0189] When evacuating the reaction chamber to the low vacuum state, open the carrier gas valve V5, the vacuum pump, and the vacuum angle valve V1. At this time, the booster valve V2 is closed, and the source valve V3 and the source valve V4 are closed. After the reaction chamber reaches the low vacuum state, also purge the reaction chamber with inert gas, and the purge time is 8 s.

[0190] (4) After the purge is completed, open the source valve V4 and introduce the second reaction precursor. When the introduction time of the second reaction precursor reaches the third time, close the source valve V4 and stop introducing the second reaction precursor; among them, the third time is 10 s, and the source amount of the second source bottle is 4.7 L. During this process, the booster valve V2 is closed, the source valve V3 is closed, the vacuum pump is opened, the vacuum angle valve V1 is opened, and the carrier gas valve V5 is opened.

[0191] (5) When performing the pressure-boosting diffusion process, when introducing a pressure-boosting gas with a constant flow rate into the reaction chamber and simultaneously stopping the evacuation of the reaction chamber, the pressure-boosting valve V2 is opened, the vacuum angle valve V1 is closed, and the pressure-boosting gas is introduced. When the introduction time of the pressure-boosting gas or the time for stopping the evacuation of the reaction chamber reaches the second time, the introduction of the pressure-boosting gas is stopped, the pressure-boosting valve V2 is closed, and the vacuum angle valve V1 is opened to evacuate the reaction chamber to a low vacuum state; wherein, the second time is 5 s, and the flow rate of the introduced pressure-boosting gas is 1000 sccm. During this process, the source valves V3 and V4 remain closed, and the carrier gas valve V5 remains open.

[0192] When evacuating the reaction chamber to a low vacuum state, during this process, the pressure-boosting valve V2, the source valves V3 and V4 remain closed, and the vacuum pump, the vacuum angle valve V1, and the carrier gas valve V5 remain open. When the reaction chamber reaches the low vacuum state, the reaction chamber is also purged with an inert gas, and the purging time is 8 s.

[0193] Among them, steps (2) to (5) are one deposition cycle.

[0194] After 150 depositions, the vacuum pump, the vacuum angle valve V1, the pressure-boosting valve V2, the source valves V3 and V4, and the carrier gas valve V5 are closed, and the door of the wafer loading platform in the reaction chamber is opened to take out the high aspect ratio structure device, and a Cu thin film is deposited on the high aspect ratio structure device. As Figure 15 shown is the cavity pressure curve graph of the reaction chamber in this embodiment, where t1 is the first time, t2 is the second time, t3 is the purging time, t4 is the third time, t5 is the second time, and t6 is the purging time. SEM and EDS energy spectrum analysis are performed on the high aspect ratio structure device, as Figure 16 and Figure 17 shown.

[0195] Example 4

[0196] In this embodiment, the first reaction precursor is Cu(acac)2 (copper acetylacetonate), the second reaction precursor is H2, and the system device used in this embodiment is connected as Figure 4 shown, and in this embodiment, the amount of the pressure-boosting gas introduced into the reaction chamber changes periodically in the opposite direction to the amount of gas evacuated from the reaction chamber.

[0197] (1) Open the door of the wafer loading platform in the reaction chamber and place the high aspect ratio structure device. During this process, the vacuum pump, the vacuum angle valve V1, the pressure-boosting valve V2, the source valves V3 and V4, and the carrier gas valve V5 are closed, and the opening degrees of the APC butterfly valves V6 and V7 are 0%. When the carrier gas valve V5 is closed, the carrier gas in the carrier gas pipeline pushes against the carrier gas valve V5, and when the pressure-boosting valve V2 is closed, the pressure-boosting gas in the pressure-boosting gas pipeline pushes against the pressure-boosting valve V2.

[0198] After placing the high aspect ratio structure device, close the door of the wafer loading platform in the reaction chamber. At the same time, turn on the vacuum pump, vacuum angle valve V1, booster valve V2 and carrier gas valve V5. The pumping speed of the vacuum pump is 600 m 3 / h, the flow rate of the carrier gas is 40 sccm, and the flow rate of the booster gas is 1000 sccm. Pump the reaction chamber to a low vacuum state, and the pressure value of the reaction chamber is 1 torr. At this time, source valve V3 and source valve V4 are closed, the opening degree of APC butterfly valve V6 is 80% (preset opening degree), and the opening degree of APC butterfly valve V7 is 0%.

[0199] Among them, the vacuum pump, vacuum angle valve V1, booster valve V2 and carrier gas valve V5 are turned on during vacuum pumping and closed until the coating of the surface of the high aspect ratio structure device is completed.

[0200] (2) When the reaction chamber reaches the low vacuum state, open source valve V3 and introduce the first reaction precursor. When the introduction time of the first reaction precursor reaches the first time, close source valve V3 and stop introducing the first reaction precursor. The first time is 5 s, and the source mass is 2 mg. During this process, source valve V4 is closed, the opening degree of APC butterfly valve V6 is 80% (preset opening degree), and the opening degree of APC butterfly valve V7 is 0%.

[0201] (3) When the amount of booster gas introduced into the reaction chamber and the amount of gas pumped out of the reaction chamber change in a reverse periodic manner, the opening degrees of APC butterfly valve V6 and APC butterfly valve V7 change in a reverse periodic manner. The opening degree of APC butterfly valve V6 decreases from 80% (preset opening degree) to 0%, and then increases from 0% to 80% (preset opening degree). The opening degree of APC butterfly valve V7 increases from 0% to 80% (preset opening degree), and then decreases from 80% (preset opening degree) to 0%. When the reverse periodic change time reaches the second time, the opening degrees of APC butterfly valve V6 and APC butterfly valve V7 stop the reverse periodic change, keep the opening degree of APC butterfly valve V6 at 80% (preset opening degree), keep the opening degree of APC butterfly valve V7 at 0%, and at the same time pump the reaction chamber back to the low vacuum state. During this process, source valve V3 and source valve V4 are closed. Among them, the second time is 5 s.

[0202] When pumping the reaction chamber to the low vacuum state, source valve V3 and source valve V4 are closed, the opening degree of APC butterfly valve V6 is 80% (preset opening degree), and the opening degree of APC butterfly valve V7 is 0%. After the reaction chamber reaches the low vacuum state, the reaction chamber is also purged with inert gas, and the purging time is 8 s.

[0203] (4) After the purging is completed, the source valve V4 is opened, and the second reaction precursor is introduced. When the introduction time of the second reaction precursor reaches the third time, the source valve V4 is closed to stop introducing the second reaction precursor. The third time is 10 s, and the source introduction amount is 4.7 L. During this process, the source valve V3 is closed, the opening degree of the APC butterfly valve V6 is 80% (preset opening degree), and the opening degree of the APC butterfly valve V7 is 0%.

[0204] (5) When the amount of pressurized gas introduced into the reaction chamber and the amount of gas pumped out of the reaction chamber change in a reverse periodic manner, the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7 change in a reverse periodic manner. The opening degree of the APC butterfly valve V6 decreases from 80% (preset opening degree) to 0%, and then increases from 0% to 80% (preset opening degree). The opening degree of the APC butterfly valve V7 increases from 0% to 80% (preset opening degree), and then decreases from 80% (preset opening degree) to 0%. When the time of the reverse periodic change reaches the second time, the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7 stop the reverse periodic change. The opening degree of the APC butterfly valve V6 is maintained at 80% (preset opening degree), and the opening degree of the APC butterfly valve V7 is maintained at 0%. At the same time, the reaction chamber is pumped back to the low vacuum state. During this process, the source valve V3 and the source valve V4 are closed. Among them, the second time is 5 s. After the reaction chamber reaches the low vacuum state, the reaction chamber is also purged with inert gas, and the purging time is 8 s.

[0205] Among them, steps (2) to (5) are one deposition cycle.

[0206] After 150 depositions, the vacuum pump is turned off, the vacuum angle valve V1 is closed, the pressurizing valve V2 is closed at the same time, the source valves V3 and V4 and the carrier gas valve V5 are closed. The opening degrees of the APC butterfly valves V6 and V7 are 0%. The door of the wafer loading platform in the reaction chamber is opened to take out the high aspect ratio structure device, and a Cu thin film is deposited on the high aspect ratio structure device. As Figure 18 shown is the cavity pressure curve graph of the reaction chamber in this embodiment, where t1 is the first time, t2 is the second time, t3 is the purging time, t4 is the third time, t5 is the second time, and t6 is the purging time. SEM and EDS energy spectrum analysis are performed on the high aspect ratio structure device, as Figure 19 and Figure 20 shown.

[0207] Comparative Example 2

[0208] In this embodiment, the first reaction precursor is Cu(acac)2 (copper acetylacetonate), and the second reaction precursor is H2 (corresponding to the source valve V4). The device used in this embodiment is as Figure 1 shown.

[0209] (1) Open the door of the wafer loading platform in the reaction chamber and place the high aspect ratio structure device. During this process, the vacuum pump, vacuum angle valve V1, carrier gas valve V5, source valve V3, and source valve V4 are closed. After placing the high aspect ratio structure device, close the door of the wafer loading platform in the reaction chamber. At the same time, turn on the vacuum pump to evacuate the reaction chamber. At the same time, open the vacuum pump, vacuum angle valve V1, and carrier gas valve V5, and close source valve V3 and source valve V4. The pumping speed of the vacuum pump is 600 m 3 / h, and the flow rate of the carrier gas is 40 sccm. Evacuate the reaction chamber to a low vacuum state, and the pressure value of the reaction chamber is 1 torr.

[0210] (2) When the reaction chamber reaches the low vacuum state, open source valve V3 and introduce the first reaction precursor. When the introduction time of the first reaction precursor reaches the first time, close source valve V3 and stop introducing the first reaction precursor. The first time is 5 s, and the source input mass of the first source bottle is 2 mg. During this process, close source valve V4, open vacuum angle valve V1, open carrier gas valve V5, and turn on the vacuum pump.

[0211] When evacuating the reaction chamber to the low vacuum state, open carrier gas valve V5, the vacuum pump, and vacuum angle valve V1. At this time, close source valve V3 and source valve V4. After the reaction chamber reaches the low vacuum state, purge the reaction chamber with inert gas for 8 s.

[0212] (3) After the purge is completed, open source valve V4 and introduce the second reaction precursor. When the introduction time of the second reaction precursor reaches the third time, close source valve V4 and stop introducing the second reaction precursor. The third time is 10 s, and the source input volume of the second source bottle is 4.7 L. During this process, close source valve V3, turn on the vacuum pump, open vacuum angle valve V1, and open carrier gas valve V5.

[0213] When evacuating the reaction chamber to the low vacuum state, keep source valve V3 and source valve V4 closed and keep the vacuum pump, vacuum angle valve V1, and carrier gas valve V5 open during this process. After the reaction chamber reaches the low vacuum state, purge the reaction chamber with inert gas for 8 s.

[0214] Among them, steps (2) to (3) are one deposition cycle.

[0215] After 150 depositions, close the vacuum pump, close vacuum angle valve V1, close source valve V3, source valve V4, and carrier gas valve V5, open the door of the wafer loading platform in the reaction chamber, and take out the high aspect ratio structure device. A Cu film is deposited on this high aspect ratio structure device. As Figure 21 shown is the cavity pressure curve graph of the reaction chamber in this embodiment, where t1 is the first time, t2 is the purge time, t3 is the third time, and t4 is the purge time. Perform SEM and EDS energy spectrum analysis on the high aspect ratio structure device. AsFigure 22 and Figure 23 as shown

[0216] Combined with Figures 15 to 23 it can be seen that in Comparative Example 2, the traditional atomic layer deposition coating method was used to deposit the deep hole structure of the high aspect ratio structure device. From Figure 22 and Figure 23 it can be seen that as the depth increases, the Cu element fails to completely fill the deep hole structure of the high aspect ratio structure device. In Example 3, the deposition of the deep hole structure of the high aspect ratio structure device was achieved by adjusting the opening and closing of the vacuum angle valve V1 and the booster valve V2. From Figure 16 and Figure 17 it can be seen that although the Cu element has filled the deep hole structure of the high aspect ratio structure device, the density is poor. In Example 4, the deposition of the deep hole structure of the high aspect ratio structure device was achieved by adjusting the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7. From Figure 19 and Figure 20 it can be seen that the Cu element has completely filled the deep hole structure of the high aspect ratio structure device, and the density is good.

[0217] Among them, different opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7 have different filling effects on the high aspect ratio structure. Taking Example 2 as an example, by adjusting the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7, the influence on the percentage of Al element inside the high aspect ratio structure device was tested. Figure 24 In it, the abscissa is the preset opening degree set by the APC butterfly valve, and the ordinate is the percentage occupancy of the Al element (%). From Figure 24 it can be seen that when the preset opening degree is 80%, the filling effect of the structure is the best, and the percentage occupancy of Al atoms in the deep hole structure of the high aspect ratio structure device is greater than 90%.

[0218] Taking Example 4 as an example, by adjusting the opening degree of the butterfly valve, the influence on the percentage of Cu element inside the high aspect ratio structure device was tested. Figure 25 In it, the abscissa is the preset opening degree set by the APC butterfly valve, and the ordinate is the percentage occupancy of the Cu element (%). From Figure 25 it can be seen that when the preset opening degree is 80%, the filling effect of the structure is the best, and the percentage occupancy of Cu atoms in the deep hole structure of the high aspect ratio structure device is greater than 85%.

[0219] Compared with the conventional atomic layer deposition process, the atomic layer deposition coating method for high aspect ratio structure devices provided in this application controls the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7, adjusts the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7, increases and decreases the pressure in the reaction chamber, and by simultaneously adjusting the opening degrees of the APC butterfly valve V6 and the APC butterfly valve V7, the reaction precursor can effectively enter the deep holes of the high aspect ratio structure devices. In this way, effective coating can be achieved on the deep holes or channels and other structures of the high aspect ratio structure devices with the reaction precursor.

[0220] As can be seen from the above embodiments, this application provides an atomic layer deposition coating method and system for high aspect ratio structure devices. The method includes placing the high aspect ratio structure device in the reaction chamber and pumping the reaction chamber to a low vacuum state; introducing a first reaction precursor into the reaction chamber, and stopping introducing the first reaction precursor when the introduction time of the first reaction precursor reaches the first time; performing a pressure increase and diffusion treatment on the reaction chamber, and stopping the pressure increase and diffusion treatment and pumping the reaction chamber back to the low vacuum state when the time of the pressure increase and diffusion treatment reaches the second time; introducing a second reaction precursor into the reaction chamber, and stopping introducing the second reaction precursor when the introduction time of the second reaction precursor reaches the third time; performing a pressure increase and diffusion treatment on the reaction chamber, and stopping the pressure increase and diffusion treatment and pumping the reaction chamber back to the low vacuum state when the time of the pressure increase and diffusion treatment reaches the second time, completing the coating on the surface of the high aspect ratio structure device. This application controls the cooperation of the first valve and the second valve, or the opening degrees of the first butterfly valve and the second butterfly valve change in a reverse periodic manner, so as to increase and decrease the pressure in the reaction chamber, and further enable the reaction precursor to quickly or effectively enter the deep holes / channels of the high aspect ratio structure devices and adsorb inside the high aspect ratio structure devices.

[0221] For the similar parts between the embodiments provided in this application, reference can be made to each other. The specific embodiments provided above are only several examples under the general concept of this application and do not constitute a limitation on the protection scope of this application. For those skilled in the art, any other implementation manner extended based on the solution of this application without creative efforts belongs to the protection scope of this application.

Claims

1. An atomic layer deposition coating method for high aspect ratio structure devices, characterized in that, The atomic layer deposition coating method for high aspect ratio structure devices includes: Placing the high aspect ratio structure device in a reaction chamber and pumping the reaction chamber to a low vacuum state; Introducing a first reaction precursor into the reaction chamber and stopping the introduction of the first reaction precursor when the introduction time of the first reaction precursor reaches a first time; Performing a pressure increase and diffusion treatment on the reaction chamber, stopping the pressure increase and diffusion treatment when the time of the pressure increase and diffusion treatment reaches a second time, and pumping the reaction chamber back to the low vacuum state; Introducing a second reaction precursor into the reaction chamber and stopping the introduction of the second reaction precursor when the introduction time of the second reaction precursor reaches a third time; Performing a pressure increase and diffusion treatment on the reaction chamber, stopping the pressure increase and diffusion treatment when the time of the pressure increase and diffusion treatment reaches a second time, and pumping the reaction chamber back to the low vacuum state to complete the coating of the surface of the high aspect ratio structure device; Wherein, performing a pressure increase and diffusion treatment on the reaction chamber, stopping the pressure increase and diffusion treatment when the time of the pressure increase and diffusion treatment reaches a second time, and pumping the reaction chamber back to the low vacuum state includes: Introducing a pressurizing gas with a constant flow rate into the reaction chamber and simultaneously stopping the evacuation of the reaction chamber. When the introduction time of the pressurizing gas or the evacuation stop time of the reaction chamber reaches a second time, stop introducing the pressurizing gas and continue to evacuate the reaction chamber until the reaction chamber is pumped back to the low vacuum state; Or, Making the amount of pressurizing gas introduced into the reaction chamber change periodically in the opposite direction to the amount of gas evacuated from the reaction chamber, stopping the reverse periodic change when the time of the reverse periodic change reaches a second time, and pumping the reaction chamber back to the low vacuum state.

2. The atomic layer deposition coating method for high aspect ratio structure devices according to claim 1, wherein The reaction chamber is respectively connected to a vacuum pump and a pressurizing gas pipeline. A first valve is provided on the connection pipeline between the reaction chamber and the vacuum pump, and a second valve is provided on the pressurizing gas pipeline connected to the reaction chamber. Wherein, when introducing a pressurizing gas with a constant flow rate into the reaction chamber and simultaneously stopping the evacuation of the reaction chamber, the first valve is closed and the second valve is opened. When the introduction time of the pressurizing gas or the evacuation stop time of the reaction chamber reaches a second time, the first valve is opened, the second valve is closed, and the vacuum pump continues to evacuate the reaction chamber until the reaction chamber is pumped to the low vacuum state.

3. The atomic layer deposition coating method for high aspect ratio structure devices according to claim 1, characterized in that, The reaction chamber is respectively connected to a vacuum pump and a pressurized gas pipeline. A first valve and a first butterfly valve are provided on the pipeline connecting the reaction chamber and the vacuum pump, and the first butterfly valve is located between the first valve and the reaction chamber. A second valve and a second butterfly valve are provided on the pressurized gas pipeline connected to the reaction chamber, and the second butterfly valve is located between the second valve and the reaction chamber. Wherein, when the amount of pressurized gas introduced into the reaction chamber and the amount of gas extracted from the reaction chamber change in a reverse periodic manner, the first valve and the second valve are opened, and the opening degrees of the first butterfly valve and the second butterfly valve change in a reverse periodic manner. When the time of the reverse periodic change reaches a second time, the first valve and the second valve are opened, and the opening degrees of the first butterfly valve and the second butterfly valve stop changing in a reverse periodic manner.

4. The atomic layer deposition coating method for high aspect ratio structure devices according to claim 3, characterized in that, The opening degrees of the first butterfly valve and the second butterfly valve changing in a reverse periodic manner includes: The opening degree of the first butterfly valve decreases from a preset opening degree to 0%, and then increases from 0% to the preset opening degree. The opening degree of the second butterfly valve increases from 0% to the preset opening degree, and then decreases from the preset opening degree to 0%.

5. The atomic layer deposition coating method for high aspect ratio structure devices according to claim 4, wherein, When performing pressurized diffusion treatment on the reaction chamber, the opening degrees of the first butterfly valve and the second butterfly valve change in a continuous and synchronous reverse periodic manner. When the opening degree of the first butterfly valve decreases from the preset opening degree to 0%, the opening degree of the second butterfly valve increases from 0% to the preset opening degree. When the opening degree of the first butterfly valve increases from 0% to the preset opening degree, the opening degree of the second butterfly valve decreases from the preset opening degree to 0%.

6. The atomic layer deposition coating method for high aspect ratio structure devices according to claim 5, characterized in that, When the time of the reverse periodic change reaches a second time, the opening degree of the first butterfly valve remains at the preset opening degree, the opening degree of the second butterfly valve remains at 0%, and the vacuum pump pumps the reaction chamber back to a low vacuum state.

7. The atomic layer deposition coating method for high aspect ratio structure devices according to claim 2, wherein The reaction chamber is also connected to a carrier gas pipeline, on which a fifth valve is provided. The carrier gas pipeline is respectively connected to a first source bottle and a second source bottle. The first source bottle stores a first reaction precursor, and the second source bottle stores a second reaction precursor. A third valve is provided on the connecting pipeline between the first source bottle and the carrier gas pipeline, and a fourth valve is provided on the connecting pipeline between the second source bottle and the carrier gas pipeline. When placing a high aspect ratio structure device in the reaction chamber, the vacuum pump, the first valve, the second valve, the third valve, the fourth valve, and the fifth valve are closed. When pumping the reaction chamber to a low vacuum state, the second valve, the third valve, and the fourth valve are closed, and the vacuum pump, the first valve, and the fifth valve are opened. When introducing the first reaction precursor into the reaction chamber, the vacuum pump, the first valve, the third valve, and the fifth valve are opened, and the second valve and the fourth valve are closed. When the introduction time of the first reaction precursor reaches the first time, the vacuum pump, the first valve, and the fifth valve are opened, and the second valve, the third valve, and the fourth valve are closed. When introducing the second reaction precursor into the reaction chamber, the vacuum pump, the first valve, the fourth valve, and the fifth valve are opened, and the second valve and the third valve are closed. When the introduction time of the second reaction precursor reaches the third time, the vacuum pump, the first valve, and the fifth valve are opened, and the second valve, the third valve, and the fourth valve are closed.

8. The atomic layer deposition coating method for high aspect ratio structure devices according to claim 3, characterized in that, The reaction chamber is also connected to a carrier gas pipeline, on which a fifth valve is provided. The carrier gas pipeline is respectively connected to a first source bottle and a second source bottle. The first source bottle stores a first reaction precursor, and the second source bottle stores a second reaction precursor. A third valve is provided on the connecting pipeline between the first source bottle and the carrier gas pipeline, and a fourth valve is provided on the connecting pipeline between the second source bottle and the carrier gas pipeline; when placing a high aspect ratio structure device in the reaction chamber, the vacuum pump, the first valve, the second valve, the third valve, the fourth valve, and the fifth valve are closed, and the opening degrees of the first butterfly valve and the second butterfly valve are 0%; when pumping the reaction chamber to a low vacuum state, the third valve and the fourth valve are closed, the vacuum pump, the first valve, the second valve, and the fifth valve are opened, the opening degree of the first butterfly valve is adjusted to a preset opening degree, and the opening degree of the second butterfly valve is 0%; when introducing the first reaction precursor into the reaction chamber, the vacuum pump, the first valve, the second valve, the third valve, and the fifth valve are opened, the fourth valve is closed, the opening degree of the first butterfly valve is the preset opening degree, and the opening degree of the second butterfly valve is 0%; when the introduction time of the first reaction precursor reaches a first time, the vacuum pump, the first valve, the second valve, and the fifth valve are opened, the third valve and the fourth valve are closed, the opening degree of the first butterfly valve is the preset opening degree, and the opening degree of the second butterfly valve is 0%; when introducing the second reaction precursor into the reaction chamber, the vacuum pump, the first valve, the second valve, the fourth valve, and the fifth valve are opened, the third valve is closed, the opening degree of the first butterfly valve is the preset opening degree, and the opening degree of the second butterfly valve is 0%; when the introduction time of the second reaction precursor reaches a third time, the vacuum pump, the first valve, the second valve, and the fifth valve are opened, the third valve and the fourth valve are closed, the opening degree of the first butterfly valve is the preset opening degree, and the opening degree of the second butterfly valve is 0%.

9. The atomic layer deposition coating method for high aspect ratio structure devices according to claim 7, characterized in that The pressure in the reaction chamber under a low vacuum state is 1 to 2 torr, the pumping speed of the vacuum pump is 500 to 800 m 3 / h, the gas flow rate before the carrier gas passes through the fifth valve is 40 to 60 sccm, the first time is 0.1 to 10 s, the second time is 1 to 20 s, the third time is 0.1 to 15 s, and the flow rate of the pressurizing gas before passing through the second valve is 800 to 1500 sccm.

10. The atomic layer deposition coating method for high aspect ratio structure devices according to claim 8, characterized in that, Under a low vacuum state, the pressure in the reaction chamber is 1 to 2 torr, the pumping speed of the vacuum pump is 500 to 800 m 3 / h, the gas flow rate before the carrier gas passes through the fifth valve is 40 to 60 sccm, the first time is 0.1 to 10 s, the second time is 1 to 20 s, the third time is 0.1 to 15 s, the flow rate before the pressurizing gas passes through the second valve is 800 to 1500 sccm, and the preset opening degree is 70 to 90%.

11. An atomic layer deposition coating system for high aspect ratio structure devices, characterized in that, For implementing the atomic layer deposition coating method for high aspect ratio structure devices according to claim 1; Wherein, the atomic layer deposition coating system for high aspect ratio structure devices includes: A reaction chamber, a vacuum pump connected to the reaction chamber, a pressurized gas pipeline, and a carrier gas pipeline; A first valve is provided on the connecting pipeline between the reaction chamber and the vacuum pump, and a second valve is provided on the pressurized gas pipeline connected to the reaction chamber; A fifth valve is provided on the carrier gas pipeline. The carrier gas pipeline is respectively connected to a first source bottle and a second source bottle. The first source bottle stores a first reaction precursor, and the second source bottle stores a second reaction precursor. A third valve is provided on the connecting pipeline between the first source bottle and the carrier gas pipeline, and a fourth valve is provided on the connecting pipeline between the second source bottle and the carrier gas pipeline.

12. The atomic layer deposition coating system for high aspect ratio structure devices according to claim 11, wherein The atomic layer deposition coating system for high aspect ratio structure devices further includes: A first butterfly valve is provided on the connecting pipeline between the reaction chamber and the vacuum pump, and the first butterfly valve is located between the first valve and the reaction chamber; A second butterfly valve is provided on the pressurized gas pipeline connected to the reaction chamber, and the second butterfly valve is located between the second valve and the reaction chamber; wherein, the opening degrees of the first butterfly valve and the second butterfly valve are controllable.

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