A semiconductor process apparatus

Abstract

Embodiments of the present application provide a semiconductor process equipment, comprising: a pumping assembly for pumping the process chamber; a pressure detector for detecting the pressure in the process chamber; a gas inlet pipeline comprising an inlet pipeline and at least one gas pipeline connected to the inlet pipeline, the outlet end of the inlet pipeline being connected to the process chamber, and the inlet end being connected to each gas pipeline; each gas pipeline comprises n levels of sub-pipelines connected in sequence; n-1 first on-off control units connected to the control unit are arranged in the gas inlet pipeline; i-1 second on-off control units; the control unit is used for controlling the pumping assembly to pump the process chamber according to the leak detection instruction, controlling the corresponding first on-off control unit and the second on-off control unit to open or close, and generating pipeline leak detection information according to the pressure value detected by the pressure detector. Embodiments of the present application can avoid pipeline pollution by detecting the pipeline in stages.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor process equipment. Background Technology

[0002] Semiconductor manufacturing equipment's epitaxial chambers are circulated with large quantities of specialty gases, requiring extremely high piping tightness, with a leakage rate requirement of <0.1 mTorr / min. Each specialty gas enters the process chamber through a common inlet pipe. If the semiconductor manufacturing equipment has at least two process chambers, the piping also includes a shared section between the chambers. For large epitaxial equipment such as 12-inch wafers, more than six types of gases are introduced, all of which are toxic. Leaks in these systems pose a significant safety hazard. Therefore, leak detection of the piping is essential.

[0003] Currently, leak detection in pipelines involves using semiconductor manufacturing equipment to provide a distribution of all hardware connections for the pipeline. Installation personnel then use helium detectors to check the pipelines according to this distribution diagram. This entire process is highly demanding on personnel and prone to missed leaks. If a leak occurs at that connection, the introduced special gas will leak as well. Furthermore, leaks within valve bodies cannot be detected by helium detectors. Moreover, if manual opening of the pipeline is required for chamber leak detection, neglecting the valve opening sequence can lead to backflow and pipeline contamination if the upstream pressure is high and the downstream pressure is low. Human operation also introduces significant uncertainty, making it relatively unstable and unreliable. Summary of the Invention

[0004] In view of the above problems, embodiments of the present invention are proposed to provide a semiconductor process apparatus that overcomes or at least partially solves the above problems.

[0005] To address the aforementioned problems, embodiments of the present invention disclose a semiconductor process apparatus, comprising: a process chamber, a vacuum assembly, a pressure detector, an inlet pipe, and a control unit;

[0006] The vacuum assembly is used to evacuate the process chamber;

[0007] The pressure detector is used to detect the pressure inside the process chamber;

[0008] The intake pipeline includes an intake pipe and at least one gas pipe connected to the intake pipe. The outlet of the intake pipe is connected to the process chamber, and the inlet is connected to each of the gas pipes. Each gas pipe includes n sequentially connected sub-pipes. The outlet of the i-th sub-pipe is connected to the (i-1)-th sub-pipe, and the inlet is connected to the (i+1)-th sub-pipe. The inlet of the n-th sub-pipe is connected to a gas source. Here, n and i are integers, and 1... <i<n;

[0009] The intake pipeline is provided with n-1 first on-off control parts connected with the control unit; the i-th first on-off control part is arranged at the connection between the i-th sub-pipeline and the i+1-th sub-pipeline;

[0010] The intake pipeline is further provided with i-1 second on-off control parts connected with the control unit; the i-1-th second on-off control part is arranged in the i-th sub-pipeline;

[0011] The control unit is used for controlling the vacuum pumping assembly to vacuumize the process chamber according to the leak detection instruction, controlling the corresponding first on-off control part and second on-off control part to open or close, and generating pipeline leak detection information according to the pressure value detected by the pressure detector.

[0012] Further, the control unit is further used for determining, from the n sub-pipelines, that the i-th sub-pipeline matched with the i-th sub-pipeline to be detected is the i-th sub-pipeline to be detected.

[0013] Further, the n sub-pipelines are three sub-pipelines.

[0014] The main module of the control unit is used for determining that the first sub-pipeline is the i-th sub-pipeline to be detected, or determining that the first sub-pipeline and the second sub-pipeline are the i-th sub-pipeline to be detected, or determining that the first sub-pipeline, the second sub-pipeline and the third sub-pipeline are the i-th sub-pipeline to be detected.

[0015] Further, the first on-off control part is a pressure regulating valve, and the second on-off control part is a mass flow controller.

[0016] Further, the control unit is used for controlling the first pressure regulating valve part to be in a communication state; vacuumizing the first sub-pipeline; or controlling the pressure regulating valve of the first sub-pipeline and the pressure regulating valve of the second sub-pipeline to be in a communication state, and controlling the mass flow controller of the first sub-pipeline; vacuumizing the first sub-pipeline and the second sub-pipeline; or controlling the pressure regulating valve of the first sub-pipeline, the pressure regulating valve of the second sub-pipeline and the pressure regulating valve of the third sub-pipeline to be in a communication state, and controlling the mass flow controller of the first sub-pipeline; vacuumizing the first sub-pipeline, the second sub-pipeline and the third sub-pipeline.

[0017] Further, the main module is configured to determine that the i-level sub-pipeline is not leaking as the pipeline leakage detection information when the pressure parameter is less than or equal to a preset bottom pressure state parameter; and determine that the i-level sub-pipeline is leaking as the pipeline leakage detection information when the pressure parameter is not less than the preset bottom pressure state parameter.

[0018] Further, the control unit comprises a time monitoring module configured to monitor a current test duration of the pressure test; and generate pipeline leakage detection information according to the pressure parameter when the current test duration is less than or equal to a preset duration; and determine that the i-level sub-pipeline is leaking as the pipeline leakage detection information when the current test duration is greater than the preset duration.

[0019] Further, the control unit is further configured to select a target single gas pipeline from the at least one gas pipeline, and perform leakage detection based on n-level sub-pipelines in the target single gas pipeline.

[0020] Further, the control unit is further configured to receive a user operation and generate the leakage detection instruction.

[0021] Further, the control unit is further configured to send a preparation signal to the on-off control unit, and the preparation signal is used to detect a working state of the on-off control unit.

[0022] Embodiments of the present application have the following advantages:

[0023] In an embodiment of the present invention, a pumping component is used to evacuate the process chamber; a pressure detector is used to detect the pressure in the process chamber; the intake pipeline includes an intake chamber pipeline and at least one gas pipeline connected to the intake chamber pipeline. The outlet end of the intake chamber pipeline is connected to the process chamber, and the inlet end is connected to each gas pipeline; each gas pipeline includes n - level sub - pipelines connected in sequence; the outlet end of the i - th level sub - pipeline is connected to the (i - 1) - th level sub - pipeline, and the inlet end is connected to the (i + 1) - th level sub - pipeline; the inlet end of the n - th level sub - pipeline is connected to a gas source; where n and i are integers, and 1 < i < n; a first on - off control part at the (n - 1) - th level connected to the control unit is provided in the intake pipeline; the first on - off control part at the i - th level is provided at the connection between the i - th level sub - pipeline and the (i + 1) - th level sub - pipeline; a second on - off control part at the (i - 1) - th level connected to the control unit is further provided in the intake pipeline; the second on - off control part at the (i - 1) - th level is provided in the i - th level sub - pipeline; according to a leak detection instruction, the control unit controls the pumping component to evacuate the process chamber, controls the corresponding first on - off control part and the second on - off control part to open or close, and generates pipeline leak detection information according to the pressure value detected by the pressure detector. By performing leak detection on each level of sub - pipelines in a hierarchical manner, cross - contamination between pipelines is avoided; and pipeline leak detection can be automatically performed, pressure parameters during the leak detection process are recorded, and the pipeline sealing performance is verified; manual inspection is avoided, and the integrity of pipeline leak detection is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 FIG. is a schematic diagram of multi - level sub - pipelines of an embodiment of a semiconductor process equipment of the present invention;

[0025] Figure 2 FIG. is a schematic diagram of control levels of an embodiment of a semiconductor process equipment of the present invention;

[0026] Figure 3 FIG. is a flowchart of control process steps of an example of a semiconductor process equipment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0027] To make the above - mentioned objects, features, and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0028] An embodiment of the present invention discloses a semiconductor process equipment, which includes: a process chamber, a pumping component, a pressure detector, an intake pipeline, and a control unit;

[0029] The pumping component is used to evacuate the process chamber;

[0030] The pressure detector is used to detect the pressure in the process chamber;

[0031] The gas inlet pipeline comprises one cavity inlet pipeline and at least one gas pipeline connected with the cavity inlet pipeline, the gas outlet end of the cavity inlet pipeline is connected with the process chamber, and the gas inlet end is connected with each gas pipeline; each gas pipeline comprises n-stage sub-pipelines connected in sequence; the gas outlet end of the i-stage sub-pipeline is connected with the i-1-stage sub-pipeline, and the gas inlet end is connected with the i+1-stage sub-pipeline; the gas inlet end of the n-stage sub-pipeline is connected with a gas source; wherein n and i are integers, and 1

[0032] The n-1-stage first on-off control part connected with the control unit is arranged in the gas inlet pipeline; the i-stage first on-off control part is arranged at the connection position of the i-stage sub-pipeline and the i+1-stage sub-pipeline;

[0033] The i-1-stage second on-off control part connected with the control unit is further arranged in the gas inlet pipeline; the i-1-stage second on-off control part is arranged in the i-stage sub-pipeline;

[0034] The control unit is used for controlling the vacuum pumping assembly to perform vacuum pumping on the process chamber according to the leakage detection instruction, controlling the corresponding first on-off control part and second on-off control part to open or close, and generating pipeline leakage detection information according to the pressure value detected by the pressure detector.

[0035] In the embodiment of the present application, the vacuum pumping assembly is arranged at one end of the process chamber, and when the pressure test is performed on the gas inlet pipeline, the process chamber is vacuum pumped to exhaust all the gas in the gas inlet pipeline and the process chamber. The pressure detector is arranged in the process chamber, and the pressure in the process chamber is detected in real time during the pressure test.

[0036] The control unit is an interactive control center, and when it is necessary to perform leakage detection on a gas pipeline, the staff can initiate a leakage detection instruction on the interactive component of the semiconductor equipment; the control unit receives the leakage detection instruction and starts to prepare the leakage detection process. The leakage detection instruction comprises pipeline leakage detection information and leakage detection operation information, the pipeline leakage detection information is used to determine the multi-stage sub-pipeline to be subjected to leakage detection, and the leakage detection operation information is used to determine the control parameters of the test process during the pressure test. According to the leakage detection instruction, the vacuum pumping assembly is controlled to perform vacuum pumping on the process chamber, and the corresponding first on-off control part and second on-off control part are controlled to open or close. The pressure value detected by the pressure detector is acquired in real time during the detection process, and the target pipeline to be subjected to test is determined to be leaked or not according to the pressure value, so as to generate pipeline leakage detection information.

[0037] The gas inlet pipeline comprises one cavity inlet pipeline and at least one gas pipeline connected with the cavity inlet pipeline, and when there are multiple gas pipelines, the multiple gas pipelines are connected in parallel. Specifically, the gas outlet end of the cavity inlet pipeline is connected with the process chamber, the gas inlet end is connected with the gas outlet end of each gas pipeline, and the gas inlet end of each gas pipeline is connected with the gas source.

[0038] Each of the gas pipelines comprises n-stage sub-pipelines connected in sequence; starting from the second stage, the gas outlet end of each stage of sub-pipeline is connected with the gas inlet end of the sub-pipeline of the previous stage, and the gas inlet end of the sub-pipeline of each stage is connected with the gas outlet end of the sub-pipeline of the next stage, that is, the gas outlet end of the i-stage sub-pipeline is connected with the i-1-stage sub-pipeline, and the gas inlet end is connected with the i+1-stage sub-pipeline. The gas inlet end of the first-stage sub-pipeline is connected with the gas inlet end of the gas inlet pipeline. The gas inlet end of the last-stage sub-pipeline is connected with the gas source, that is, the gas inlet end of the n-stage sub-pipeline is connected with the gas source. Wherein n and i are integers, and 1

[0039] In the sub-pipeline except the last stage, the gas inlet end of each stage of the gas inlet pipeline is provided with a first on-off control part, which can be provided with different valves according to the requirements. That is, in the gas inlet pipeline, there are n-1 stages of first on-off control parts, and the i-stage first on-off control part is arranged at the connection between the i-stage sub-pipeline and the i+1-stage sub-pipeline.

[0040] In addition, in the first stage and the last stage of the sub-pipeline, each stage of the sub-pipeline is provided with a second on-off control part, which can be a valve different from the first on-off control part. The second on-off control part is arranged inside each stage of the sub-pipeline, that is, in the gas inlet pipeline, there are i-1 stages of second on-off control parts; the i-1-stage second on-off control part is arranged in the i-stage sub-pipeline.

[0041] Further, the control unit is also used to determine, from the n-stage sub-pipelines, the i-stage sub-pipeline matched with the i-stage sub-pipeline to be detected for leakage as the i-stage sub-pipeline to be detected for leakage from the first stage to the i-stage sub-pipeline.

[0042] When testing, the control unit can determine, from the n-stage sub-pipelines, the i-stage sub-pipeline matched with the i-stage sub-pipeline to be detected for leakage, and determine the i-stage sub-pipeline to the first stage as the i-stage sub-pipeline to be detected for leakage matched with the i-stage sub-pipeline to be detected for leakage.

[0043] In an example of the present application, the n-stage sub-pipeline is a three-stage sub-pipeline, that is, the multiple-stage sub-pipeline comprises a first-stage sub-pipeline, a second-stage sub-pipeline and a third-stage sub-pipeline. Referring to Figure 2The first-level sub-pipeline is a part of the chamber connected with the inlet valve, i.e. the part from the PV1 valve to the chamber; the second-level sub-pipeline is a part of the MFC pipeline, i.e. the part from the PV1 valve to the PV2 valve; and the third-level sub-pipeline is a part of the common pipeline, i.e. the part from the PV2 valve to the factory. Since there are multiple special gas pipelines in the chamber, but only one inlet pipeline, each special gas needs to pass through the pipeline A to enter the chamber, so the part of each special gas pipeline connected with the pipeline A is the first-level sub-pipeline; the pipeline A is separated from each special gas used separately by the electromagnetic valve, and the multi-chamber machine also includes a common pipeline, i.e. the special gas injection pipeline C used by two chambers, and the pipeline B is separated from the pipeline C by the electromagnetic valve, so the pipeline B is the second-level sub-pipeline; and the pipeline C is the third-level sub-pipeline. The first on-off control unit is the PV valve, i.e. the pressure regulating valve, and the second on-off control unit is the MFC valve, i.e. the mass flow controller.

[0044] When it is necessary to leak-check at least one first-level sub-pipeline of the special gas pipeline, the main module of the control unit receives a leak-checking instruction for leak-checking the special gas pipeline; and the leak-checking of the special gas pipeline is started by the leak-checking instruction. The leak-checking instruction includes leak-checking pipeline information and leak-checking operation information. The multiple-level sub-pipelines are matched with the leak-checking pipeline information, so as to determine the i-level sub-pipeline to be leak-checked. The leak-checking pipeline level identifier can include a first-level pipeline leak-checking identifier, a second-level pipeline leak-checking identifier, and a third-level pipeline leak-checking identifier. Different i-level sub-pipelines are matched by different pipeline leak-checking identifiers of different levels.

[0045] Specifically, when the leak-checking pipeline level identifier is the first-level pipeline leak-checking identifier, the main module of the control unit is configured to determine that the first-level sub-pipeline is the i-level sub-pipeline to be leak-checked. That is, when the leak-checking pipeline level identifier is the first-level pipeline leak-checking identifier, only the first-level sub-pipeline needs to be leak-checked. Therefore, the first-level sub-pipeline in the special gas pipeline can be determined as the i-level sub-pipeline to be leak-checked.

[0046] Alternatively, when the leak-checking pipeline level identifier is the second-level pipeline leak-checking identifier, the main module of the control unit is configured to determine that the first-level sub-pipeline and the second-level sub-pipeline are the i-level sub-pipelines to be leak-checked. That is, when the leak-checking pipeline level identifier is the second-level pipeline leak-checking identifier, only the first-level sub-pipeline and the second-level sub-pipeline need to be leak-checked. Therefore, the first-level sub-pipeline and the second-level sub-pipeline can be determined as the i-level sub-pipelines to be leak-checked.

[0047] Alternatively, when the leak-checking pipeline level identifier is the third-level pipeline leak-checking identifier, the main module of the control unit is configured to determine that the first-level sub-pipeline, the second-level sub-pipeline, and the third-level sub-pipeline are the i-level sub-pipelines to be leak-checked. That is, when the leak-checking pipeline level identifier is the third-level pipeline leak-checking identifier, all the third-level sub-pipelines need to be leak-checked. Therefore, the first-level sub-pipeline, the second-level sub-pipeline, and the third-level sub-pipeline in the special gas pipeline can be determined as the i-level sub-pipelines to be leak-checked.

[0048] Further, after the control unit determines the i-level sub-pipeline to be tested for leakage, the control unit controls the first-level pressure regulating valve to be in a communication state; performs vacuumization on the first-level sub-pipeline; or controls the pressure regulating valve of the first-level sub-pipeline and the pressure regulating valve of the second-level sub-pipeline to be in a communication state, controls the mass flow controller of the first-level sub-pipeline; performs vacuumization on the first-level sub-pipeline and the second-level sub-pipeline; or controls the pressure regulating valve of the first-level sub-pipeline, the pressure regulating valve of the second-level sub-pipeline, and the pressure regulating valve of the third-level sub-pipeline to be in a communication state, controls the mass flow controller of the first-level sub-pipeline; and performs vacuumization on the first-level sub-pipeline, the second-level sub-pipeline, and the third-level sub-pipeline.

[0049] Specifically, the control unit can first control the i-level pipeline to be tested for leakage to perform emptying processing, so as to release the current gas in the target sub-pipeline at normal pressure. After emptying, pressure testing is performed on the i-level pipeline to be tested for leakage. The gas pressure adjusting assembly can be controlled to operate according to the leakage testing operation information, so as to complete the pressure testing by performing corresponding processing on the target sub-pipeline. Specifically, the leakage testing operation information can include: pipeline gas extraction target pressure, target pressure value reached by vacuumizing the target sub-pipeline. Exemplarily, the parameter range is 0-1000 mTor, and the default value is 50 mTorr. Pipeline gas extraction timeout time: timeout time, used in combination with the pipeline gas extraction target pressure, the parameter range is 0-3600 s, and the default value is 120 s. Pipeline gas extraction maintenance time: time for maintaining the current action after the pressure reaches the target pressure, the parameter range is 0-7200 s, and the default value is 120 s.

[0050] Specifically, when the i-level sub-pipeline to be tested for leakage is the first-level sub-pipeline, the control unit controls the first-level pressure regulating valve to be in a communication state; and performs vacuumization on the first-level sub-pipeline.

[0051] When the i-level sub-pipeline to be tested for leakage is the first-level sub-pipeline and the second-level sub-pipeline, the control unit controls the pressure regulating valve of the first-level sub-pipeline and the pressure regulating valve of the second-level sub-pipeline to be in a communication state, and controls the mass flow controller of the first-level sub-pipeline; and performs vacuumization on the first-level sub-pipeline and the second-level sub-pipeline.

[0052] When the i-level sub-pipeline to be tested for leakage is the first-level sub-pipeline, the second-level sub-pipeline, and the third-level sub-pipeline, the control unit controls the pressure regulating valve of the first-level sub-pipeline, the pressure regulating valve of the second-level sub-pipeline, and the pressure regulating valve of the third-level sub-pipeline to be in a communication state, and controls the mass flow controller of the first-level sub-pipeline; and performs vacuumization on the first-level sub-pipeline, the second-level sub-pipeline, and the third-level sub-pipeline.

[0053] Further, after the i-level sub-pipeline to be detected is vacuumed, the main module receives the pressure parameter sent by the pressure detector in real time; when the pressure parameter is less than or equal to the preset bottom pressure state parameter, it is determined that the i-level sub-pipeline does not leak, which is the pipeline leakage detection information; when the pressure parameter is not less than the preset bottom pressure state parameter, it is determined that the i-level sub-pipeline leaks, which is the pipeline leakage detection information. That is, after the main module receives the pressure parameter, the pressure parameter can be compared with the parameter corresponding to the pipeline meeting the leakage requirement, and the management leakage detection information is generated. The management leakage detection information can include whether it leaks and the leakage rate. Specifically, when the pressure parameter is less than or equal to the preset bottom pressure state parameter, that is, the target sub-pipeline has good sealing performance, and the gas leaked into the target sub-pipeline meets the requirements during vacuuming; it can be determined that the target sub-pipeline does not leak, which is the pipeline leakage detection information. In addition, the current leakage rate can also be determined according to the pressure parameter and the preset bottom pressure state parameter. When the pressure parameter is greater than the preset bottom pressure state parameter, that is, the target sub-pipeline has a large leakage, and the gas leaked into the target sub-pipeline does not meet the requirements during vacuuming; it can be determined that the target sub-pipeline leaks, which is the pipeline leakage detection information. In addition, the current leakage rate can also be determined according to the pressure parameter and the preset bottom pressure state parameter.

[0054] In addition, during vacuuming, the target sub-pipeline can also be determined whether it has a leakage according to the vacuuming time. The control unit includes a time monitoring module, which is used to monitor the current test duration of the pressure test; when the current test duration is less than or equal to the preset duration, the pipeline leakage detection information is generated according to the pressure parameter; when the current test duration is greater than the preset duration, it is determined that the i-level sub-pipeline leaks, which is the pipeline leakage detection information. That is, during monitoring, the test duration of the current pressure test is detected, that is, the current test duration. When the current test duration is less than or equal to the preset duration, that is, the pressure in the sub-pipeline to be detected can be reduced below a certain pressure within the preset duration, whether there is a leakage can be further determined by the pressure parameter, when the current test duration is greater than the preset duration, that is, the pressure in the sub-pipeline to be detected is reduced below a certain pressure within the preset duration, there must be a pipeline leakage, and the target sub-pipeline can be directly determined to leak, which is the pipeline leakage detection information. Thus, the leakage detection process is accelerated.

[0055] Further, when a plurality of gas pipelines are connected in parallel, only one of the gas pipelines can be selected for leakage detection. The control unit is further used to select a target single gas pipeline from the at least one gas pipeline, and to detect the n-level sub-pipeline in the target single gas pipeline. That is, when only the sub-pipeline in a specific gas pipeline needs to be detected, a target single gas pipeline can be selected from the at least one gas pipeline in advance, and the n-level sub-pipeline in the target single gas pipeline can be detected.

[0056] In order to make the skilled in the art more clear the embodiments of the present application, with an example for illustration:

[0057] Referring to Figure 2 , a control hierarchy diagram of a semiconductor process equipment example is shown. The present example is implemented based on the structure. Specifically, the upper computer and the lower computer can be included, and the lower computer has a main module, a gas path control module, a pressure control module, and a time monitoring module. The upper computer provides interface operation, and can freely select the number of pipelines and the pipeline level to be leak tested. The upper computer is responsible for issuing the pipeline selected by the user to the lower computer. The main module of the lower computer is responsible for command initiation and process control. The gas path control of the lower computer is responsible for the control of pneumatic valves and MFCs (mass flow controllers). The pressure control of the lower computer is responsible for the control of butterfly valves and pressure regulation. The time monitoring of the lower computer is responsible for monitoring whether each process is completed on time. The extension pipeline to be leak tested can refer to Figure 1 .

[0058] Referring to Figure 3 , based on the pipeline shown in Figure 1 , the leak testing process is as follows:

[0059] 1) Close all gas inlets of the chamber, and through the butterfly valve, the exhaust valve, and the dry pump, the chamber pressure is extracted to the bottom pressure state (parameter range: 0-50 Torr, default value: 1 Torr). If the bottom pressure state cannot be extracted within 20 minutes, an alarm is thrown to notify the main control system to end the process. If the pressure is reached, H2 path PV1, MFC, and PV2 are closed, the HCL gas path is operated, and process 2) is entered.

[0060] 2) Open the special gas first-level pipeline (open PV1, close MFC and PV2), and through the butterfly valve, the exhaust valve, and the dry pump, the pipeline pressure is extracted to the bottom pressure state (parameter range: 0-1000 mTorr, default value: 50 mTorr). If the bottom pressure state cannot be extracted within the pipeline gas extraction timeout time (parameter range: 0-3600 s, default value: 120 s), an alarm is thrown to notify the main control system to end the process. If the pressure is reached, the pipeline gas extraction maintenance time (parameter range: 0-7200 s, default value: 120 s) is entered. After the maintenance time is reached, process 3) is entered.

[0061] 3) Open the special gas first-level and second-level pipelines (open PV1, MFC, and close PV2), and through the butterfly valve, the exhaust valve, and the dry pump, the pipeline pressure is extracted to the bottom pressure state (parameter range: 0-1000 mTorr, default value: 50 mTorr). If the bottom pressure state cannot be extracted within the pipeline gas extraction timeout time (parameter range: 0-3600 s, default value: 120 s), an alarm is thrown to notify the main control system to end the process. If the pressure is reached, the pipeline gas extraction maintenance time (parameter range: 0-7200 s, default value: 120 s) is entered. After the maintenance time is reached, process 4) is entered.

[0062] 4) Open the gas 1st, 2nd and 3rd level pipeline (open PV1, MFC and PV2), through the butterfly valve, exhaust valve and dry pump to pipeline pressure to the bottom pressure state (parameter range: 0-1000mTorr, default value: 50mTorr), in the pipeline pumping timeout (parameter range: 0-3600s, default value: 120s) failed to pump to the bottom pressure state, then throw out the alarm, inform the main control system to end the process; if the pressure is reached, enter the pipeline pumping maintenance time (parameter range: 0-7200s, default value: 120s); after the maintenance time is reached, enter process 5);

[0063] 5) HCL pipeline pumping is completed, close HCL PV1, MFC and PV2, process 2) 3) 4) for H2 road;

[0064] 6) After process 5) is completed, open HCL and H2 PV1, MFC and PV2, enter the chamber leak detection process, first pump the chamber to the bottom pressure state (parameter range: 0-1000mTorr, default value: 1000mTorr), in 20min failed to pump to the bottom pressure state, then report the alarm information, inform the main control system to end the process; if the pressure is reached, close the butterfly valve, exhaust valve, enter the chamber pressure maintaining stage, after the leak detection time (parameter range: 0-86400s, default value: 1800s) is reached, calculate the leakage rate, if the leakage rate is greater than the required value (parameter range: 0-1mTorr / min, default value: 0.1mTorr / min), then the leak detection fails, throw out the alarm to inform the user, otherwise the process is normally ended, output the leakage rate value.

[0065] The embodiment of the present application evacuates the process chamber through the evacuation assembly; the pressure detector is used for detecting the pressure in the process chamber; the gas inlet pipeline comprises one cavity inlet pipeline and at least one gas pipeline connected with the cavity inlet pipeline; the gas outlet end of the cavity inlet pipeline is connected with the process chamber, and the gas inlet end is connected with each gas pipeline; each gas pipeline comprises n-stage sub-pipelines connected in sequence; the gas outlet end of the i-stage sub-pipeline is connected with the i-1-stage sub-pipeline, and the gas inlet end is connected with the i+1-stage sub-pipeline; the gas inlet end of the n-stage sub-pipeline is connected with the gas source; wherein n and i are integers, and 1

[0066] It should be noted that, for the method embodiments, the series of acts combined are described for simplicity, but those skilled in the art should know that the present application is not limited by the order of the acts described, because according to the present application, certain steps can be performed in other orders or at the same time. Secondly, those skilled in the art should know that the embodiments described in the specification are all preferred embodiments, and the acts involved are not necessarily essential to the present application.

[0067] Each embodiment in the specification is described in a progressive manner, and each embodiment focuses on the difference from other embodiments. The same and similar parts between each embodiment can be referred to each other.

[0068] Those skilled in the art should understand that the embodiments of the present application can be provided as a method, device, or computer program product. Therefore, the present application can be in the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present application can be in the form of a computer program product implemented on one or more computer usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer usable program code.

[0069] The embodiments of the present application are described with reference to the flowchart illustrations and / or block diagrams of the methods, terminal devices (systems) and computer program products according to the embodiments of the present application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing terminal devices to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal devices, create means for implementing the functions specified in the flowchart illustrations and / or block diagrams. Figure 1 one or more functions specified in the flowchart illustrations and / or block diagrams. Figure 1 one or more functions specified in the flowchart illustrations and / or block diagrams.

[0070] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing terminal devices to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instructions which implement the function specified in the flowchart illustrations and / or block diagrams. Figure 1 one or more functions specified in the flowchart illustrations and / or block diagrams. Figure 1 one or more functions specified in the flowchart illustrations and / or block diagrams.

[0071] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal devices, such that a series of operational steps are carried out on the computer or other programmable terminal devices to produce a computer implemented process so that the instructions executed on the computer or other programmable terminal devices provide steps for implementing the functions specified in the flowchart illustrations and / or block diagrams. Figure 1 one or more functions specified in the flowchart illustrations and / or block diagrams. ​ one or more functions specified in the flowchart illustrations and / or block diagrams.

[0072] Although preferred embodiments of the present application have been described, those skilled in the art will be able to make additional modifications and variations to the embodiments without departing from the scope of the present application. Accordingly, the appended claims are intended to encompass all such modifications and variations as falling within the scope of the embodiments of the present application.

[0073] Finally, it needs to be pointed out that in this document, relational terms such as first and second and the like can only be used to distinguish one entity or action from another entity or action, without necessarily requiring or implying that there is any such actual relationship or order between these entities or actions. Moreover, the terms "comprises", "comprising", or any other variations thereof, are intended to cover a non-exclusive inclusion, so that a process, method, article, or terminal device including a list of elements does not include only those elements but can include other elements not expressly listed or inherent to such process, method, article, or terminal device. Without more limitations, an element defined by the statement "comprising a" does not exclude the existence of additional identical elements in the process, method, article, or terminal device including the element.

[0074] The above describes in detail the semiconductor processing equipment provided by the present application, and the principles and implementation manners of the present application are described by using specific examples. The above description of the examples is only used to help understand the method of the present application and its core idea. Meanwhile, for those skilled in the art, the specific implementation manners and application ranges can be changed according to the idea of the present application. In summary, the content of the specification should not be understood as a limitation of the present application.

Claims

1. A semiconductor process apparatus, characterized by, The utility model relates to a process chamber, a gas exhaust assembly, a pressure detector, a gas inlet pipeline and a control unit. The gas exhaust assembly is used to vacuumize the process chamber. The pressure detector is used to detect the pressure in the process chamber. The gas inlet pipeline comprises an inlet pipeline and at least one gas pipeline connected to the inlet pipeline, the outlet end of the inlet pipeline is connected to the process chamber, and the inlet end is connected to each gas pipeline. Each gas pipeline comprises n levels of sub-pipelines connected in sequence. The i-1 level second on-off control part is arranged in the i level sub-pipeline. The control unit is used to control the gas exhaust assembly to vacuumize the process chamber according to the leak detection instruction, control the corresponding first on-off control part and second on-off control part to open or close, and generate pipeline leak detection information according to the pressure value detected by the pressure detector. The control unit is also used to determine the i level sub-pipeline to the first level sub-pipeline as the i level sub-pipeline to be detected from the n levels of sub-pipelines.

2. The semiconductor process apparatus according to claim 1, wherein The n levels of sub-pipelines are three levels of sub-pipelines.

3. The semiconductor process apparatus according to claim 2, wherein The main module of the control unit is used to determine the first level sub-pipeline as the i level sub-pipeline to be detected, or determine the first level sub-pipeline and the second level sub-pipeline as the i level sub-pipeline to be detected, or determine the first level sub-pipeline, the second level sub-pipeline and the third level sub-pipeline as the i level sub-pipeline to be detected. The first on-off control part is a pressure regulating valve, and the second on-off control part is a mass flow controller.

4. The semiconductor process apparatus according to claim 3, wherein The control unit is used to control the first level pressure regulating valve to be in a communication state, vacuumize the first level sub-pipeline, or control the first level pressure regulating valve and the second level pressure regulating valve to be in a communication state, control the mass flow controller of the first level sub-pipeline, vacuumize the first level sub-pipeline and the second level sub-pipeline, or control the first level pressure regulating valve, the second level pressure regulating valve and the third level pressure regulating valve to be in a communication state, control the mass flow controller of the first level sub-pipeline, and vacuumize the first level sub-pipeline, the second level sub-pipeline and the third level sub-pipeline.

5. The semiconductor process apparatus according to claim 4, wherein The main module is used to determine that the i level sub-pipeline is not leaked as the pipeline leak detection information when the pressure parameter is less than or equal to a preset bottom pressure state parameter, and determine that the i level sub-pipeline is leaked as the pipeline leak detection information when the pressure parameter is not less than the preset bottom pressure state parameter.

6. The semiconductor process apparatus according to claim 2, wherein ​ 7. The semiconductor process apparatus according to claim 1, wherein The control unit comprises a time monitoring module configured to monitor a current test duration of the pressure test; when the current test duration is less than or equal to a preset duration, generating pipeline leakage detection information according to the pressure parameter; when the current test duration is greater than the preset duration, determining that the i-level sub-pipeline is leaked as the pipeline leakage detection information.

8. The semiconductor process apparatus according to claim 1, wherein The control unit is further configured to select a target single gas pipeline from the at least one gas pipeline and perform leakage detection based on n-level sub-pipelines in the target single gas pipeline.

9. The semiconductor process apparatus according to claim 1, wherein The control unit is further configured to receive a user operation and generate the leakage detection instruction.

10. The semiconductor process apparatus according to claim 1, wherein The control unit is further configured to send a preparation signal to the on-off control unit, and the preparation signal is used to detect the working state of the on-off control unit.

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