Packaging adapter plate and manufacturing method thereof

Abstract

The invention provides a packaging adapter plate and a manufacturing method thereof. The manufacturing method comprises the following steps: etching from a first main surface of a substrate along the thickness direction to form at least one blind hole; forming a passivation layer at least on the side wall and the bottom of the blind hole; sintering precursors are applied to the blind holes, the sintering precursors are mixed in an oscillation mode, the blind holes are filled with the sintering precursors, and the sintering precursors are powdery and mainly composed of metal powder and glass powder; and sintering the sintering precursor in a protective atmosphere to form the metal column. According to the method, after the passivation layer is formed on the inner surface of the blind hole, a barrier layer and a conductive layer do not need to be formed, then the blind hole can be filled with the powdery sintering precursor, the metal connecting column can be formed through the sintering process executed under the protective atmosphere, deposition of the barrier layer and the conductive layer, electroplating of a metal layer and other complex processes are avoided, and the manufacturing cost is reduced. The equipment cost and the material cost are greatly reduced, and the process complexity and the manufacturing cost are effectively reduced.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor packaging, and in particular relates to a packaging adapter plate and a manufacturing method thereof. Background Art

[0002] Semiconductor technology continues to evolve in the direction of Moore's Law. As the signal rate doubles every 3 to 4 years, the distance that electrical signals can be transmitted is gradually decreasing. Based on cost considerations, people are still trying to extend the life of electrical signal transmission. However, since chip packaging and process capabilities cannot be infinitely improved, the increase in power consumption caused by the continuous increase in IO rate will eventually hit the power wall of chip packaging. Therefore, semiconductor products are developing from two-dimensional to three-dimensional, and 2.5D / 3D advanced packaging technology with through silicon via (TSV) as the core has emerged. Through silicon via (TSV) technology refers to the vertical interconnection between the upper and lower surfaces of silicon. Through silicon vias can be formed on functional chips or on silicon adapters. Silicon adapters with TSV vertical interconnection vias and high-density metal wiring can increase system integration density and achieve system-level heterogeneous integration. Mixed interconnection of multiple / heterogeneous computing units under the requirements of extremely high bandwidth and reliable rate can greatly reduce product size, increase packaging connection speed, reduce signal delay, and improve product performance.

[0003] However, while TSV packaging technology improves product performance, it has also gradually shown its high manufacturing cost, among which the cost problem in the TSV filling process is particularly obvious. At present, the electroplating process is often used to fill the interconnection through-holes, but before the electroplating filling, the conductive layer needs to be deposited on the entire surface of the silicon wafer and in the blind hole or through-hole cavity used to form the TSV. When the conductive layer is deposited, not only is the sidewall deposition poor, but it is often uneven or broken, resulting in voids in the copper pillars formed by the final electroplating filling. Not only that, the price of the deposition and electroplating equipment is very expensive, and the TSV electroplating filling itself takes a long time, which makes the TSV production cost high, especially for through-holes with a high aspect ratio. The electroplating time for one piece can reach more than 6 hours, which is particularly inefficient. In addition to the electroplating solution, additives need to be introduced to improve the filling performance and efficiency, resulting in a particularly high cost of the solution. The resulting waste liquid needs to be specially collected and treated, and there is a risk of environmental pollution. In addition, 3D nanoprinting technology has been introduced into the TSV through-hole filling process. The specific steps include: filling the metal slurry dispersed in organic matter into a single hole by 3D nanoprinting, and then sintering to form. However, this method is inefficient and the slurry is prone to drying up during the sintering process, which finally introduces pores, thereby affecting the conductivity and yield of the interconnection.

[0004] Therefore, it is necessary to provide a new method for manufacturing a packaging adapter plate. Summary of the invention

[0005] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a packaging adapter plate and a method for manufacturing the same, so as to solve the problems in the prior art that the preparation process of the adapter plate used for packaging is complex, the production cost including equipment and chemicals is high, the efficiency is low, and pores are easily generated, thereby affecting the conductivity and yield.

[0006] In order to achieve the above-mentioned object and other related objects, the present invention provides a method for manufacturing a packaging adapter plate, the manufacturing method comprising:

[0007] Providing a substrate, the substrate having a first main surface and a second main surface opposite to each other;

[0008] Etching from the first main surface of the substrate along the thickness direction thereof to form at least one blind hole;

[0009] forming a passivation layer at least on the sidewall and bottom of the blind hole;

[0010] Applying a sintering precursor into the blind hole, and mixing and filling the sintering precursor into the blind hole by shaking, wherein the sintering precursor is in powder form and mainly consists of metal powder and glass powder;

[0011] Sintering the sintering precursor under a protective atmosphere to form a metal column filling the blind hole;

[0012] forming a first redistribution layer on the first main surface of the substrate, wherein the first redistribution layer is electrically connected to the metal pillar;

[0013] Thinning the substrate from the second main surface of the substrate until the metal pillar in the blind hole is exposed;

[0014] A second redistribution layer is formed on the second main surface of the substrate, and the second redistribution layer is electrically connected to the metal pillar.

[0015] Optionally, a machine with ultrasonic oscillation is used in a vacuum environment to mix the sintering precursor in the blind hole and fill the blind hole; and the sintering precursor covering the surface of the substrate is removed.

[0016] Optionally, a wafer boat is used to carry a plurality of substrates to simultaneously perform the sintering step of the sintering precursor.

[0017] Optionally, the content of the glass powder is in the range of 10% to 15%, the metal powder is mainly copper powder, the content of the copper powder is in the range of 85% to 90%, and the metal column obtained by sintering has a conductive network structure with the glass component around the copper particles as the network skeleton and physical contact formed between the copper particles.

[0018] Furthermore, the sintering step of the sintering precursor includes: introducing nitrogen to provide a protective atmosphere; sintering the sintering precursor into a metal column at a temperature of 350°C to 400°C in the protective atmosphere, wherein the amount of oxygen contained in the protective atmosphere is controlled to be no more than 10ppm.

[0019] Optionally, the particle size range of the metal powder is ≤500 nm, and the particle size range of the glass powder is 0.8 μm to 1.2 μm.

[0020] Optionally, the step of thinning the substrate includes: thinning the substrate from the second main surface of the substrate to a thickness slightly larger than the blind hole through a back thinning process; then, thinning the substrate through a dry etching process to expose the passivation layer at the bottom of the blind hole.

[0021] Optionally, the step of forming a second rewiring layer on the second main surface of the substrate includes: removing the passivation layer at the bottom of the blind hole by a chemical mechanical polishing process to expose the metal column; forming a second rewiring layer on the second main surface of the substrate, the second rewiring layer being electrically connected to the metal column exposed on the second main surface of the substrate; and forming a metal bump on the side of the second rewiring layer away from the substrate.

[0022] Optionally, the method further comprises: performing an annealing process at a temperature higher than 600° C. to relieve stress on the sintered metal pillars and the substrate; and then, using a chemical mechanical polishing process to grind the first main surface of the substrate until the metal oxide passivation layer is exposed.

[0023] The present invention also provides a packaging adapter board, which is manufactured based on the aforementioned packaging adapter board manufacturing method, and the packaging adapter board includes: a substrate, at least one through hole is formed through the first main surface and the second main surface opposite to each other of the substrate, the through hole is filled with a metal column, the metal column is electrically coupled between the first re-wiring layer and the second re-wiring layer, and the metal column includes a conductive network structure with a glass component around copper particles as a network skeleton.

[0024] As described above, in the packaging adapter board and the manufacturing method thereof of the present invention, at least one blind hole is formed in the substrate. After the passivation layer is formed on the inner surface of the blind hole, there is no need to form a barrier layer and a conductive layer. Subsequently, a powdered sintering precursor can be used to fill the blind hole, and a metal connecting column can be formed by a sintering process performed under a protective atmosphere, thereby avoiding a series of complex processes such as the deposition of the barrier layer and the conductive layer, and the electroplating of the metal layer, as well as the expensive equipment cost and material cost required to perform the above processes, thereby effectively reducing the process complexity and manufacturing cost. In addition, the metal column formed by sintering has a conductive network structure with a glass component as the network skeleton and physical contact between the copper particles, and thus has good adhesion to the side wall of the passivation layer, effectively improving the yield of the interconnection, and the conductivity is sufficient to meet the impedance requirements of products such as CMOS image sensors and MEMS. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 The graph shows the relationship between the process parameters of the electroplating process and the sample filling effect.

[0026] Figures 2 to 10 Shown is a schematic diagram of the structures corresponding to each stage in an exemplary process flow for packaging an interposer.

[0027] Figures 11 to 27 It shows the structural schematic diagram corresponding to each stage of the manufacturing method of the packaging adapter board of the present invention.

[0028] Fig.28 It is a schematic structural diagram of a wafer boat used in step S5 of the method for manufacturing a packaging adapter board of the present invention.

[0029] Component number description

[0030] 100 Silicon Wafer

[0031] 102 Photoresist layer

[0032] 110 Silicon Blind Via

[0033] 112 Passivation layer

[0034] 114 Conductive layer

[0035] 115 Metal Layer

[0036] 116 Metal Column

[0037] 117 Front side redistribution layer

[0038] 118 Slide

[0039] 119 Backside redistribution layer

[0040] 120 metal bumps

[0041] 200 Silicon Wafer

[0042] 200a First main surface

[0043] 200b Second main surface

[0044] 202 photoresist layer

[0045] 203 Patterned photoresist layer

[0046] 204 Mask

[0047] 210 Blind hole

[0048] 212 Passivation layer

[0049] 213 Protective film

[0050] 214 Sintering Precursor

[0051] 216 Metal Column

[0052] 217 First redistribution layer

[0053] 218 Slide

[0054] 219 Second redistribution layer

[0055] 220 metal bumps

[0056] 217a Patterned dielectric layer

[0057] 217b Metal wiring layer

[0058] 30 Crystal Boat DETAILED DESCRIPTION

[0059] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0060] See also Figures 1 to 28 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0061] See also Figures 2 to 10 , showing a schematic diagram of the structure presented at each step of an exemplary process flow for packaging an interposer:

[0062] (1) Figure 2 As shown, a silicon wafer 100 is provided. The silicon wafer 100 has a first main surface and a second main surface opposite to each other.

[0063] (2) Figure 3 As shown, at least one silicon blind via 110 is formed by etching from the first main surface of the silicon wafer along its thickness direction.

[0064] (3) Figure 4 As shown, a passivation layer 112 is formed on the bottom and sidewall of the silicon blind hole 110 and the surface of the silicon wafer 100 to prevent the silicon material from directly contacting the subsequently deposited metal.

[0065] (4) Figure 5 As shown, a barrier layer (not shown) and a conductive layer 114 are deposited on the surface of the passivation layer using a physical vapor deposition (PVD) method. Figure 5 As shown, the thickness and uniformity of the conductive layer deposited in this step will affect the crystallization quality and filling capacity of the metal layer formed by the subsequent electroplating process. However, it is very challenging to use the PVD process to achieve a conformal continuous thin film layer of high aspect ratio micropores. It is very easy to cause poor film thickness and uniformity on the side walls of the micropores, especially the side walls near the bottom, and the equipment currently used is expensive.

[0066] (5) Figure 6 As shown, the metal layer 115 is deposited by electroplating process with the conductive layer 114 as the cathode and the inert electrode as the anode. The metal layer 115 fills the blind hole and covers the surface of the silicon wafer 100 .

[0067] After that, execute steps (6) to (9), see Figure 7 to Figure 10 As shown, based on the silicon wafer obtained in step (5), the steps of front side rewiring layer 117, back side rewiring layer 119 and back side electrical lead-out are sequentially performed.

[0068] like Figure 7 As shown, step (6) also includes: planarizing the surface of the structure obtained in step (5), removing the metal layer, barrier layer and passivation layer covering the silicon wafer to form a metal column 116.

[0069] Among them, the above process flow requires the pre-deposition of a conductive layer, and then the electroplating process is performed with the conductive layer as the cathode. The deposition of the conductive layer will affect the filling capacity and electrical properties of the metal layer in the subsequent filling process. However, the conventional physical vapor deposition process such as electron beam evaporation process has unsatisfactory coverage of the side walls of blind holes or through holes, especially for blind holes or through holes with a high aspect ratio, which leads to uneven film formation or cracks. The electroplating process is performed based on this conductive layer, and the metal filling in the blind hole finally has defects such as voids. In addition, in the actual process, the filling efficiency of the electroplating process needs to be considered. In particular, for blind holes, through holes or similar structures with a large aspect ratio, the specific process parameters in the electroplating process will be appropriately adjusted to reduce the efficiency of electroplating, such as current density, thereby avoiding the appearance of seams or voids in the metal filling. Figure 1 As shown in the figure, it reflects the relationship between the filling effect of the sample and the duration of the electroplating process. It can be seen that the filling step itself takes a long time in the production process of the silicon adapter. As can be seen from the figure, comparing the electroplating efficiency of sample A and sample C, to increase the filling effect of the metal layer by 20%, sample C needs to consume several times the process time of sample A. The electroplating time of a single piece can reach more than 6 hours, which is low in efficiency.

[0070] In view of the fact that the above-mentioned process flows have high production costs, difficulty in improving the production efficiency of TSV, and the risk of environmental pollution caused by waste liquid generated during processing, the inventors of the present application have proposed a novel method for producing a packaging adapter plate, which includes filling a blind hole or a through hole with a sintering precursor including metal powder, and then sintering the sintering precursor to form a metal column. The production method of the packaging adapter plate has low cost and low process difficulty. Through the production method, metal columns without holes can be quickly formed. The obtained packaging adapter plate has broad prospects in application fields such as CMOS image sensors (CIS) and microelectromechanical systems (MEMS) where there are no special requirements for impedance.

[0071] See also Figures 11 to 28 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0072] Based on this, this embodiment provides a method for manufacturing a package adapter plate, which uses a sintering process to fill the blind hole. Unlike the above-mentioned manufacturing method which uses an electroplating process, there is no need to form a barrier layer and a conductive layer. The manufacturing method includes the following steps:

[0073] like Fig.11As shown, step S1 is first performed to provide a substrate 200 , wherein the substrate 200 has a first main surface 200 a and a second main surface 200 b opposite to each other.

[0074] It should be noted here that the first main surface 200a and the second main surface 200b only represent that the substrate 200 has two opposite surfaces. If one surface is defined as the first main surface, the other opposite surface is defined as the second main surface, and the first and the second have no specific meanings. In addition, the thickness of the substrate 200 is selected according to actual needs, and the incoming material can be thinned as appropriate, and no excessive restrictions are made here.

[0075] As an example, the substrate 200 may be made of any base material suitable for preparing a package transfer board, including but not limited to a silicon substrate or a glass substrate.

[0076] Then, if Figure 12 to Figure 15 As shown, step S2 is performed to form at least one blind hole 210 by etching the first main surface 200 a of the substrate along the thickness direction thereof.

[0077] Specifically, step S1 includes sequentially performing the steps of coating, exposing, and developing the photoresist layer 202 to form a patterned photoresist layer 203 on the first main surface 200a of the substrate; based on the patterned photoresist layer 203, dry etching is performed from the first main surface 200a of the substrate along the thickness direction to form at least one blind hole 210. The depth, diameter, shape, number, and other parameters of the blind hole 210 are set according to actual packaging requirements and are not excessively restricted herein.

[0078] For example, a vacuum etching machine is used to anisotropically etch the substrate 200 using an etching gas such as one containing SF6 and O2, and the corresponding depth is etched without significant change in the opening of the blind hole.

[0079] As an example, step S2 also includes: after the blind hole 210 is formed by etching, the photoresist layer remaining on the surface of the substrate can be removed by chemical solution, and the specific steps are as follows: first perform alkaline washing and then perform acid washing.

[0080] Then, if Fig.16 As shown, step S3 is performed to form a passivation layer 212 at least on the sidewall and the bottom of the blind hole.

[0081] For example, a passivation layer 212 is formed on the inner surface of the blind hole and the surface of the substrate by plasma enhanced chemical vapor deposition (PECVD) to separate the substrate material from the subsequently deposited metal material. In the through silicon via technology, a silicon substrate is used to manufacture a packaging adapter. Since silicon is a semiconductor material, an insulating layer needs to be formed to separate silicon from a metal material with good conductivity.

[0082] Then, if Figure 17 to Figure 19 As shown, step S4 is performed to apply a sintering precursor 214 into the blind hole 210 , and the sintering precursor 214 is mixed and filled into the blind hole 210 by an oscillation method. The sintering precursor 214 is in powder form and mainly consists of metal powder and glass powder.

[0083] Specifically, the substrate 200 is placed on a machine with ultrasonic oscillation under a vacuum environment, and the sintering precursor 214 is applied to the blind hole 210, so that the sintering precursor 214 is fully mixed and fills the blind hole 210, wherein the metal powder and the glass powder can be applied separately, or can be pre-mixed before application. The component content of the sintering precursor and the physical properties of each component can be determined based on the required electrical properties of the interconnection through hole.

[0084] As an example, the content of the glass powder is in the range of 10% to 15%, and the metal powder is mainly or includes copper powder, and the content of the copper powder is in the range of 85% to 90%.

[0085] It should be noted that the content of each component in the sintering precursor referred to herein is a percentage based on the total weight of the powdered sintering precursor, that is, mass percentage (wt%).

[0086] As an example, the metal powder also includes metal column materials commonly used in the art, including alloys of one or more metals selected from gold, silver, tin, titanium, nickel, magnesium, bismuth, palladium, nickel, chromium, iron, and indium, and the composition of the glass powder includes network formers, such as silicon oxide, boron oxide, and network intermediates, such as zinc oxide and aluminum oxide. The appropriate particle size of the metal powder can be selected according to the melting behavior of the glass powder and its wettability to the metal powder. In this embodiment, the particle size of the metal powder is ≤500nm, and the particle size of the glass powder is 0.8μm to 1.2μm, preferably 1μm to 1.2μm, and more preferably, the particle size is 1μm, which is beneficial to improve the density and bonding strength of the copper particles in the metal column, thereby optimizing the reliability and conductivity of the metal column as a whole.

[0087] like Fig.19 As shown, after completing the blind hole filling step, the process further includes: cleaning the surface of the substrate 200, cleaning the excess powder covering the surface, and collecting the metal powder as appropriate.

[0088] Then, if Fig. 20 As shown, step S5 is performed to sinter the sintering precursor 214 under a protective atmosphere to form a metal column 216 filling the blind hole.

[0089] Specifically, the sintering process is performed under a protective atmosphere at a temperature lower than the melting temperature of the glass powder. During the sintering process, the glass powder is slightly melted and incompletely transformed into a liquid state. The powder is then condensed and formed into a metal column 216 by cooling. The metal column 216 has a conductive network structure with a glass component as a network skeleton and physical contact between copper particles. The conductive network structure has a network skeleton composed of the glass component around the copper particles, so that physical contact is formed between the copper particles.

[0090] As an example, step S5 includes: introducing nitrogen to provide a protective atmosphere; sintering the sintering precursor to form a metal column 216 at a temperature of 350°C to 400°C in the protective atmosphere, wherein the amount of oxygen contained in the protective atmosphere is controlled to be no more than 10 ppm, thereby inhibiting the oxidation reaction of copper particles in the conductive network structure, thereby reducing the conductivity of the metal column, wherein the sintering process is performed for more than 10 minutes, for example, 10 minutes.

[0091] like Fig.28 As shown, a wafer boat is used to carry multiple substrates and perform the sintering step at the same time. In some examples, a wafer boat can be used as a carrier to perform the sintering of dozens of wafers at the same time. The wafer boat shown in the figure can perform the sintering of more than 25 wafers at the same time, which greatly improves the output rate.

[0092] As an example, the sintering process is performed when the oxygen content is less than 100 ppm to avoid oxidation and affect the conductivity of the copper column. The copper powder is mainly used for conductivity, and the glass component provides a network skeleton for physical contact of the copper particles, and also enhances the adhesion to the side wall without the need to form a barrier layer and a conductive layer before filling the blind hole, avoiding the poor coverage of the conductive layer on the side wall of the blind hole and the generation of pores or seams.

[0093] After sintering to form the metal pillar 216, an annealing process is performed at a temperature above 600°C to relieve stress on the sintered metal pillar 216 and the substrate 100, release the residual stress in the metal filler, and reduce the thermal stress caused by the mismatch in thermal expansion coefficients between the metal filler and the substrate, thereby improving the thermal mechanical reliability of the interconnect structure.

[0094] Then, if Figure 21 to Figure 24 As shown, step S6 is performed to form a first redistribution layer 217 on the first main surface 200 a of the substrate, and the first redistribution layer 217 is electrically connected to the metal pillar 216 .

[0095] Specifically, Fig.21 As shown, step S6 includes: pre-processing the first main surface 200a of the substrate; and forming a first redistribution layer 217 on the first main surface 200a of the substrate using a bump process.

[0096] As an example, the first rewiring layer 217 includes a patterned metal wiring layer 217a and a patterned dielectric layer 217b. The method for forming the first rewiring layer 217 includes: forming a dielectric layer on the first main surface 200a of the substrate, and etching the dielectric layer using a conventional photolithography process and an etching process to form the patterned dielectric layer 217b; forming a metal wiring layer on the patterned dielectric layer 217a and the exposed portion of the first main surface 200a of the substrate, and patterning it to form the patterned metal wiring layer 217b. It should be noted here that the first rewiring layer 217 can be multi-layered according to actual needs, and the manufacturing method of each layer of the first rewiring layer 217 is the same, and the above method can be used.

[0097] Then, if Fig.25 As shown, step S7 is performed to thin the substrate 200 from the second main surface 200b of the substrate until the metal pillar 216 at the bottom of the blind hole 210 is exposed. After thinning, the blind hole 210 is formed to pass through the substrate 200.

[0098] As an example, the step of thinning the substrate 200 includes: first, thinning the substrate 200 by a predetermined thickness on the second main surface of the substrate through a back thinning process so that the exposed surface of the substrate is not lower than the bottom surface of the blind hole; then, using a dry etching process to further thin the substrate 200 to expose the passivation layer at the bottom of the blind hole 210; and using a chemical mechanical polishing (CMP) process to remove the passivation layer at the bottom of the blind hole.

[0099] As an example, before thinning the substrate 200 , a step of bonding a carrier 218 to the surface of the first redistribution layer is also included.

[0100] In this embodiment, step S7 further includes: using a dry etching process to thin the substrate, depositing a protective film 213 on the second main surface of the substrate; and using a chemical mechanical polishing (CMP) process to flatten the second main surface of the substrate 100 to remove the passivation layer at the bottom of the blind hole. Taking the substrate 100 as a silicon substrate as an example, during the CMP process, the surface of the substrate 200 is covered with a protective film 213, so as to prevent the metal pillar from being exposed during the CMP process and causing metal diffusion, thereby avoiding the above process from affecting the impedance of silicon.

[0101] Then, if Figure 26-27 As shown, step S8 is performed to form a second redistribution layer 219 on the second main surface 200 b of the substrate, and the second redistribution layer 219 is electrically connected to the metal pillars 216 .

[0102] As an example, Fig. 27As shown, after forming the second rewiring layer 219, the step of forming a metal bump 220 on the second rewiring layer 219 is also included. The metal bump 220 includes one of a gold-tin solder ball, a silver-tin solder ball, and a copper-tin solder ball. In this embodiment, the metal bump 220 is formed on the pad of the second rewiring layer by a C4 process, and the steps include: first, a series of processes such as passivation, photolithography, masking, etching, and sputtering are sequentially performed on the pad of the second rewiring layer 219 to make an adhesion layer and a barrier layer of an under-bump metal layer (UBM); then, a solder bump is formed, and a high-temperature reflow process is used to form the solder bump into a solder ball. In other examples, a ball planting process is used to form the solder ball.

[0103] As an example, Fig. 27 As shown, the carrier sheet 218 is removed after the final package interposer is formed.

[0104] The present embodiment also provides a packaging adapter board, which is manufactured by the above-mentioned manufacturing method, and the packaging adapter board includes: a substrate 200, at least one through hole is formed through the first main surface and the second main surface opposite to each other of the substrate, and the through hole is filled with a metal column 216, and the metal column 216 is electrically coupled between the first re-wiring layer 217 and the second re-wiring layer 219. The metal column 216 includes a conductive network structure with a glass component as a network skeleton, wherein copper particles form physical contact by adhering to the glass components around them.

[0105] As an example, the metal pillar 216 is configured to have an interconnection area through which current passes, and its shape includes but is not limited to: square, rectangular, circular, cylindrical, polygonal or similar shapes, and the side surface of the metal pillar 216 has a cylindrical or conical cross-section.

[0106] In summary, the present invention provides a method for manufacturing a package adapter plate, in which at least one blind hole is formed. After a passivation layer is formed on the inner surface of the blind hole, there is no need to form a barrier layer and a conductive layer. Subsequently, a powdered sintering precursor can be used to fill the blind hole, and a metal connection column can be formed by a sintering process performed under a protective atmosphere, thereby avoiding a series of complex processes such as deposition of a barrier layer and a conductive layer, and electroplating of a metal layer, as well as expensive equipment costs and material costs, thereby effectively reducing process complexity and manufacturing costs. In addition, the metal column formed by sintering has a conductive network structure composed of glass, and thus has good adhesion to the side wall of the passivation layer, effectively improving the yield of interconnection, and the conductivity is sufficient to meet the impedance requirements of products such as CMOS image sensors and MEMS. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has a high industrial utilization value.

[0107] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for manufacturing a packaging adapter plate, characterized in that: The production method comprises: Providing a substrate, the substrate having a first main surface and a second main surface opposite to each other; Etching from the first main surface of the substrate along the thickness direction thereof to form at least one blind hole; forming a passivation layer at least on the sidewall and bottom of the blind hole; Applying a sintering precursor into the blind hole, and mixing and filling the sintering precursor into the blind hole by shaking, wherein the sintering precursor is in powder form and mainly consists of metal powder and glass powder; Sintering the sintering precursor under a protective atmosphere to form a metal column filling the blind hole; forming a first redistribution layer on the first main surface of the substrate, wherein the first redistribution layer is electrically connected to the metal pillar; The substrate is thinned from the second main surface of the substrate until the metal column in the blind hole is exposed; a second rewiring layer is formed on the second main surface of the substrate, and the second rewiring layer is electrically connected to the metal column.

2. The method for manufacturing a packaging adapter plate according to claim 1, characterized in that: Mixing the sintering precursors and filling them into the blind holes using a machine with ultrasonic oscillation in a vacuum environment; The sintering precursor covering the surface of the substrate is removed.

3. The method for manufacturing a packaging adapter plate according to claim 1, characterized in that: A wafer boat is used to carry a plurality of substrates to simultaneously perform the sintering step of the sintering precursor.

4. The method for manufacturing a packaging adapter plate according to claim 1, characterized in that: The content of the glass powder is in the range of 10% to 15%, the metal powder is mainly copper powder, and the content of the copper powder is in the range of 85% to 90%. The sintered metal column has a conductive network structure with the glass component around the copper particles as the network skeleton and physical contact between the copper particles.

5. The method for manufacturing a packaging adapter plate according to claim 1, characterized in that: The sintering step of the sintering precursor includes: introducing nitrogen to provide a protective atmosphere; sintering the sintering precursor into a metal column at a temperature of 350°C to 400°C in the protective atmosphere, wherein the amount of oxygen contained in the protective atmosphere is controlled to be no more than 10ppm.

6. The method for manufacturing a packaging adapter plate according to claim 5, characterized in that: The particle size range of the metal powder is ≤500nm, and the particle size range of the glass powder is 0.8μm to 1.2μm.

7. The method for manufacturing a packaging adapter plate according to claim 1, characterized in that: The step of thinning the substrate comprises: thinning the substrate from the second main surface of the substrate to a thickness slightly larger than the blind hole by a back thinning process; then, thinning the substrate by a dry etching process to expose the passivation layer at the bottom of the blind hole.

8. The method for manufacturing a packaging adapter plate according to claim 7, characterized in that: The step of forming a second rewiring layer on the second main surface of the substrate includes: removing the passivation layer at the bottom of the blind hole by a chemical mechanical polishing process to expose the metal column; forming a second rewiring layer on the second main surface of the substrate, the second rewiring layer is electrically connected to the metal column exposed on the second main surface of the substrate; forming a metal bump on the side of the second rewiring layer away from the substrate.

9. The method for manufacturing a packaging adapter plate according to claim 1, characterized in that: Also includes: An annealing process is performed at a temperature higher than 600° C. to relieve stress on the sintered metal pillars and the substrate; then, a chemical mechanical polishing process is used to grind the first main surface of the substrate until the metal oxide passivation layer is exposed.

10. A packaging adapter board, characterized in that: The packaging adapter board is manufactured based on the manufacturing method of the packaging adapter board according to any one of claims 1 to 9, and the packaging adapter board includes: a substrate, at least one through hole is formed through the first main surface and the second main surface opposite to each other of the substrate, the through hole is filled with a metal column, the metal column is electrically coupled between the first re-wiring layer and the second re-wiring layer, and the metal column includes a conductive network structure with a glass component around copper particles as a network skeleton.

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