Novel power module for vehicle-mounted charging

Abstract

The invention discloses a novel power module for vehicle-mounted charging, and relates to the technical field of monitoring analysis, the novel power module comprises a plurality of silicon carbide mos tubes and a high-precision temperature sensor, the plurality of silicon carbide mos tubes are respectively a first mos tube S1 and a second mos tube S2; according to the novel power module for vehicle-mounted charging, through a screening mechanism and layout design, the structural performance of an H-bridge topology circuit composed of a plurality of silicon carbide mos transistors is symmetrical and balanced, the power density is improved, and the volume and weight of a peripheral circuit and a magnetic element are reduced. Aiming at the exquisite design and analogue simulation of key electrical parameters such as insulation and voltage resistance, electrical clearance and creepage distance, the device can adapt to severe environments such as high temperature, high humidity and high altitude, and meets various requirements specified by the IEC60664 standard; the high-precision temperature sensor is connected with an external circuit, so that the temperature condition of the circuit can be detected in real time, circuit damage caused by temperature change is avoided, and meanwhile, the heat dissipation performance can be monitored.

Description

Technical Field

[0001] The present invention relates to the technical field of monitoring and analysis, and in particular to a novel power module for vehicle-mounted charging. Background Art

[0002] In related technologies, in order to meet the requirements of current sharing, heat dissipation, insulation withstand voltage, etc. in vehicle charging application scenarios, the overall design often adopts a power semiconductor single-tube device solution, which will increase its own volume at the expense of increasing the overall volume and weight and reducing efficiency. This will not be able to bring into play the full performance of silicon carbide vehicle charging.

[0003] With the continuous improvement and development of power electronics technology, power semiconductor devices have a fanatical pursuit of higher power density, but their packaging structure seriously hinders the further improvement of power density. In addition, in addition to the above-mentioned disadvantages, power semiconductor devices also have many other disadvantages, such as unsatisfactory heat dissipation performance, large stray inductance, small creepage distance and electrical clearance, etc. These disadvantages are the main factors that adversely affect the reliability of power semiconductor devices. Summary of the invention

[0004] The purpose of the present invention is to provide a new type of power module for vehicle-mounted charging to solve the above-mentioned deficiencies in the prior art.

[0005] In order to achieve the above-mentioned purpose, the present invention provides the following technical solution: a new power module for on-board charging, comprising multiple silicon carbide MOS tubes and a high-precision temperature sensor, wherein the multiple silicon carbide MOS tubes are respectively a first MOS tube S1, a second MOS tube S2, a third MOS tube S3 and a fourth MOS tube S4.

[0006] Furthermore, a plurality of the silicon carbide MOS tubes form an H-bridge topology circuit.

[0007] Further, the source S of the first MOS S1 is connected to the drain D of the second MOS S2, the source S of the third MOS S3 is connected to the drain D of the fourth MOS S4, and the drain D of the first MOS S1 is connected to the drain D of the third MOS S3 and outputs.

[0008] Furthermore, two ends of the high-precision temperature sensor are connected to an external circuit.

[0009] Furthermore, it also includes a voltage-current conversion circuit, wherein the reference voltage of the voltage-current conversion circuit acts on both ends of the resistor R2 through an operational amplifier to form a reference current, and is replicated through the proportional coefficient of the current mirror to obtain two reference currents I R1 with I R2, an operational amplifier is introduced to play the role of clamping and buffering. The reference voltage acts on the resistor R2 through the operational amplifier. Transistors M1, M2 and M3 form a current mirror with a proportional coefficient of 1:a:b. R1 Replicate with different proportional coefficients to obtain two reference currents I R1 with I R2 The operational amplifier, transistor M1 and resistor R1 form a closed-loop negative feedback circuit, and Miller capacitor C1 and zero adjustment resistor R3 are added.

[0010] Furthermore, it also includes a compensation circuit, which utilizes the clamping effect of the amplifier to copy the reference voltage to the Q point. Through the resistor R4, the temperature-independent current is copied to the branch where Q4 is located. At this time, Q3 and Q4 are connected together, and through the resistor R5, a voltage that is non-linearly related to temperature can be obtained on the resistor. The circuit can adjust the high-order part of the temperature drift function to achieve more accurate temperature compensation. This method utilizes the difference in temperature characteristics of different types of resistors and offsets the high-order terms in the voltage by constructing a resistor ratio with opposite temperature coefficients.

[0011] Furthermore, the buffer circuit includes an operational amplifier, which is a two-stage operational amplifier. The resistor R1 and the capacitor C1 form a Miller compensation loop. The resistors R3 and R4 are of the same type. The reference voltage acts on the resistor R3 to form a current I R3 , and M1 and M2 form a current mirror with a proportional coefficient of 1:1, then the current I R4 The output voltage is formed through the resistor R4.

[0012] Compared with the prior art, the present invention provides a new type of power module for on-board charging. Through the screening mechanism and layout design, the H-bridge topology circuit structure composed of multiple silicon carbide MOS tubes has symmetrical and balanced performance, improves power density, reduces the volume and weight of peripheral circuits and magnetic components, saves space, improves conversion efficiency and reliability, and extends the service life of the module. The sophisticated design and simulation of key electrical parameters such as insulation withstand voltage, electrical clearance and creepage distance can adapt to harsh environments such as high temperature, high humidity, and high altitude, and meet the requirements of the IEC60664 standard; the temperature of the circuit can be detected in real time by connecting the high-precision temperature sensor to the external circuit to avoid circuit damage due to temperature changes, and the heat dissipation performance can be monitored at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0014] Figure 1 A circuit packaging structure block diagram provided for an embodiment of the present invention;

[0015] Figure 2 A block diagram of an H-bridge topology circuit structure provided by an embodiment of the present invention;

[0016] Figure 3-Figure 5 A structural block diagram of a T-bridge topology circuit provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0017] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings.

[0018] Embodiment 1

[0019] See also Figure 1-2 A new power module for on-board charging includes multiple silicon carbide MOS tubes and a high-precision temperature sensor, wherein the multiple silicon carbide MOS tubes are respectively a first MOS tube S1, a second MOS tube S2, a third MOS tube S3 and a fourth MOS tube S4.

[0020] A plurality of silicon carbide MOSFETs form an H-bridge topology circuit, wherein the source S of the first MOSFET S1 is connected to the drain D of the second MOSFET S2, the source S of the third MOSFET S3 is connected to the drain D of the fourth MOSFET S4, the drain D of the first MOSFET S1 is connected to the drain D of the third MOSFET S3 and outputs, wherein all pins of the first MOSFET S1, the second MOSFET S2, the third MOSFET S3 and the fourth MOSFET S4 are output through leads.

[0021] This arrangement increases the thickness of the circuit package, increases the insulation level, and reduces the volume and weight of the circuit board. While saving space, it can adapt to high-altitude environments and increase the use environment of the car charger.

[0022] Both ends of the high-precision temperature sensor are connected to an external circuit.

[0023] By connecting a high-precision temperature sensor to an external circuit, the temperature of the external circuit can be detected in real time to avoid circuit damage due to excessive changes in external temperature, thereby realizing the detection of heat dissipation performance.

[0024] Both ends of the high-precision temperature sensor are connected to an external circuit.

[0025] By connecting a high-precision temperature sensor to an external circuit, the temperature of the external circuit can be detected in real time to avoid circuit damage due to excessive changes in external temperature, thereby realizing the detection of heat dissipation performance.

[0026] The invention also includes a voltage-current conversion circuit. The reference voltage of the voltage-current conversion circuit acts on both ends of a resistor R2 through an operational amplifier to form a reference current, and is copied through a current mirror with a certain proportional coefficient to obtain two reference currents IR1 and IR2. The operational amplifier is introduced to play a role of clamping and buffering. The reference voltage acts on the resistor R2 through the operational amplifier. Transistors M1, M2 and M3 form a group of current mirrors with a proportional coefficient of 1:a:b. IR1 is copied with different proportional coefficients to obtain two reference currents IR1 and IR2. The operational amplifier, transistor M1 and resistor R1 constitute a closed-loop negative feedback circuit. The loop phase margin affects the stability of the voltage-current conversion circuit, thereby affecting the power supply suppression characteristics of the reference source. Miller capacitor C1 and zero adjustment resistor R3 are added to change the positions of the primary and secondary poles in the loop, increase the loop phase margin, and improve the stability of the circuit.

[0027] The compensation circuit utilizes the clamping effect of the amplifier to copy the reference voltage to the Q point. Through resistor R4, a current that is theoretically independent of temperature is copied to the branch where Q4 is located. At this time, Q3 and Q4 are connected together, and through resistor R5, a voltage that is nonlinearly related to temperature can be obtained on this resistor. The circuit can adjust the high-order part of the temperature drift function to achieve more accurate temperature compensation. This method utilizes the difference in temperature characteristics of different types of resistors and offsets the high-order terms in the voltage by constructing a resistor ratio with opposite temperature coefficients.

[0028] The buffer circuit includes an operational amplifier. The operational amplifier adopts a two-stage operational amplifier. Resistor R1 and capacitor C1 form a Miller compensation loop, which plays a role of frequency compensation for the closed loop, increases the loop phase margin, and improves the stability of the circuit system. Resistors R3 and R4 are selected as resistors of the same type. The operational amplifier plays a clamping role. The reference voltage acts on resistor R3 to form current IR3, and M1 and M2 form a current mirror with a proportional coefficient of 1:1, then current IR4 passes through resistor R4 to form an output voltage.

[0029] The above description is only by way of illustration of certain exemplary embodiments of the present invention. It is undoubted that those skilled in the art can modify the described embodiments in various ways without departing from the spirit and scope of the present invention. Therefore, the above drawings and descriptions are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.

Claims

1. A new power module for on-board charging, characterized in that: It comprises a plurality of silicon carbide MOS tubes and a high-precision temperature sensor, wherein the plurality of silicon carbide MOS tubes are respectively a first MOS tube S1, a second MOS tube S2, a third MOS tube S3 and a fourth MOS tube S4.

2. A new power module for vehicle charging according to claim 1, characterized in that: A plurality of the silicon carbide MOS tubes form an H-bridge topology circuit.

3. A new type of power module for vehicle charging according to claim 2, characterized in that: The source S of the first MOS S1 is connected to the drain D of the second MOS S2, the source S of the third MOS S3 is connected to the drain D of the fourth MOS S4, and the drain D of the first MOS S1 is connected to the drain D of the third MOS S3 and outputs.

4. A new type of power module for vehicle charging according to claim 3, characterized in that: Both ends of the high-precision temperature sensor are connected to an external test circuit.

5. The novel power module for vehicle charging according to claim 3 is characterized in that: The circuit also includes a voltage-current conversion circuit, wherein the reference voltage of the voltage-current conversion circuit is applied to both ends of the resistor R2 through an operational amplifier to form a reference current, and is replicated through the proportional coefficient of the current mirror to obtain two reference currents I R1 with I R2 , an operational amplifier is introduced to play the role of clamping and buffering. The reference voltage acts on the resistor R2 through the operational amplifier. Transistors M1, M2 and M3 form a current mirror with a proportional coefficient of 1:a:b. R1 Replicate with different proportional coefficients to obtain two reference currents I R1 with I R2 The operational amplifier, transistor M1 and resistor R1 form a closed-loop negative feedback circuit, and Miller capacitor C1 and zero adjustment resistor R3 are added.

6. The novel power module for vehicle charging according to claim 3 is characterized in that: It also includes a compensation circuit, which utilizes the clamping effect of the amplifier to copy the reference voltage to the Q point. Through the resistor R4, the current that is independent of temperature is copied to the branch where Q4 is located. At this time, Q3 and Q4 are connected together, and through the resistor R5, a voltage that is non-linearly related to temperature can be obtained on the resistor. The circuit can adjust the high-order part of the temperature drift function to achieve more accurate temperature compensation. This method utilizes the difference in temperature characteristics of different types of resistors and offsets the high-order terms in the voltage by constructing a resistor ratio with opposite temperature coefficients.

7. The new power module for vehicle charging according to claim 3 is characterized in that: The buffer circuit also includes an operational amplifier, which uses a two-stage operational amplifier. The resistor R1 and the capacitor C1 form a Miller compensation loop. The resistors R3 and R4 are of the same type. The reference voltage acts on the resistor R3 to form a current I R3 , and M1 and M2 form a current mirror with a proportional coefficient of 1:1, then the current I R4 The output voltage is formed through the resistor R4.

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