Packaging structure of power module, electric drive system and vehicle

Abstract

The application relates to a packaging structure of a power module, an electric drive system and a vehicle. The packaging structure of the power module comprises at least one full-bridge arm, a plurality of metal terminals and a first copper-clad substrate, a heat dissipation substrate and a second copper-clad substrate which are sequentially stacked; the metal terminals comprise a positive terminal, a negative terminal, a midpoint terminal and an output terminal; the positive terminal is located on the side of the first copper-clad substrate away from the heat dissipation substrate; the negative terminal is located on the side of the second copper-clad substrate away from the heat dissipation substrate; the midpoint terminal and the output terminal respectively extend to the second copper-clad substrate along the first copper-clad substrate; the full-bridge arm comprises an upper bridge arm and a lower bridge arm; the upper bridge arm is located on the side of the first copper-clad substrate away from the heat dissipation substrate and is connected with the positive terminal, the midpoint terminal and the output terminal respectively; the lower bridge arm is located on the side of the second copper-clad substrate away from the heat dissipation substrate and is connected with the negative terminal, the midpoint terminal and the output terminal respectively. The packaging structure of the power module is designed in layers, and the area ratio is small.

Description

Technical Field

[0001] The present application relates to the technical field of electric vehicles, and in particular to a packaging structure of a power module, an electric drive system, and a vehicle. Background Art

[0002] With the development of electric vehicles, they are trending towards higher voltages, currently reaching 800V to 1000V. This move towards higher voltages is primarily aimed at enabling high-voltage fast charging and shortening charging times. However, high-voltage 800V systems typically require power modules with a withstand voltage of 1200V. Traditional silicon-based IGBTs generally have a withstand voltage of 750V. When this voltage is increased to 1200V, switching losses become extremely high, significantly reducing system efficiency. Consequently, silicon carbide IGBTs are currently widely used, but these cost more than three times as much as traditional silicon-based IGBTs. Furthermore, the rapid switching of high voltage and high current can also introduce significant voltage and current surges, impacting device reliability and significantly reducing the device's electromagnetic compatibility and NVH (noise, vibration, and harshness) performance.

[0003] There are currently attempts to use a three-level topology to replace the two-level topology. The three-level topology adds 6 IGBTs and 6 diodes compared to the conventional two-level topology, and the three-level topology requires a larger layout space. Summary of the Invention

[0004] Based on this, it is necessary to provide a packaging structure of a power module, an electric drive system and a vehicle with a small area occupancy.

[0005] In a first aspect, the present application provides a packaging structure of a power module, comprising: at least one full-bridge arm, a plurality of metal terminals, and a first copper-clad substrate, a heat dissipation substrate, and a second copper-clad substrate stacked in sequence; wherein,

[0006] The plurality of metal terminals include a positive terminal, a negative terminal, a midpoint terminal, and an output terminal, wherein the positive terminal is located on a side of the first copper-clad substrate away from the heat dissipation substrate, the negative terminal is located on a side of the second copper-clad substrate away from the heat dissipation substrate, and the midpoint terminal and the output terminal extend along the first copper-clad substrate to the second copper-clad substrate respectively;

[0007] The full-bridge arm includes an upper bridge arm and a lower bridge arm. The upper bridge arm is located on a side of the first copper-clad substrate away from the heat dissipation substrate, and is respectively connected to the positive terminal, the midpoint terminal and the output terminal. The lower bridge arm is located on a side of the second copper-clad substrate away from the heat dissipation substrate, and is respectively connected to the negative terminal, the midpoint terminal and the output terminal.

[0008] In one embodiment, the upper bridge arm includes: a first reverse conducting insulated gate bipolar transistor, a second reverse conducting insulated gate bipolar transistor and a first diode; wherein the drain of the second reverse conducting insulated gate bipolar transistor is respectively connected to the source of the first reverse conducting insulated gate bipolar transistor, the cathode of the first diode and the output terminal, the drain of the first reverse conducting insulated gate bipolar transistor is connected to the positive terminal, and the anode of the first diode is connected to the midpoint terminal.

[0009] In one embodiment, a first copper-clad region, a second copper-clad region, a third copper-clad region, and a fourth copper-clad region are further provided on a side of the first copper-clad substrate away from the heat dissipation substrate, wherein the first copper-clad region is provided corresponding to the first reverse-conducting insulated gate bipolar transistor and is in contact with the drain of the first reverse-conducting insulated gate bipolar transistor, the positive terminal, and the third copper-clad region, respectively; the second copper-clad region is provided corresponding to the second reverse-conducting insulated gate bipolar transistor and is in contact with the drain of the second reverse-conducting insulated gate bipolar transistor; the third copper-clad region is in contact with the midpoint terminal; and the fourth copper-clad region is in contact with the output terminal;

[0010] The source of the first reverse-conducting insulated gate bipolar transistor is connected to the second copper-clad area through a bonding wire, the source of the second reverse-conducting insulated gate bipolar transistor is connected to the fourth copper-clad area through a bonding wire, the cathode of the first diode is connected to the third copper-clad area through a bonding wire, and the anode of the first diode is connected to the second copper-clad area through a bonding wire.

[0011] In one embodiment, the lower bridge arm includes: a third reverse conducting insulated gate bipolar transistor, a fourth reverse conducting insulated gate bipolar transistor and a second diode; wherein the source of the third reverse conducting insulated gate bipolar transistor is respectively connected to the drain of the fourth reverse conducting insulated gate bipolar transistor, the anode of the second diode and the output terminal, the source of the fourth reverse conducting insulated gate bipolar transistor is connected to the negative terminal, and the cathode of the second diode is connected to the midpoint terminal.

[0012] In one embodiment, a fifth copper-clad region, a sixth copper-clad region, a seventh copper-clad region, and an eighth copper-clad region are further provided on a side of the second copper-clad substrate away from the heat dissipation substrate, wherein the fifth copper-clad region is provided corresponding to the fourth reverse-conducting insulated gate bipolar transistor and is in contact with the source of the fourth reverse-conducting insulated gate bipolar transistor, the negative terminal, and the seventh copper-clad region, respectively; the sixth copper-clad region is provided corresponding to the third reverse-conducting insulated gate bipolar transistor and is in contact with the source of the third reverse-conducting insulated gate bipolar transistor; the seventh copper-clad region is in contact with the midpoint terminal; and the eighth copper-clad region is in contact with the output terminal;

[0013] The drain of the fourth reverse conducting insulated gate bipolar transistor is connected to the sixth copper clad area through a bonding wire, the drain of the third reverse conducting insulated gate bipolar transistor is connected to the eighth copper clad area through a bonding wire, the cathode of the second diode is connected to the seventh copper clad area through a bonding wire, and the anode of the second diode is connected to the sixth copper clad area through a bonding wire.

[0014] In one embodiment, the packaging structure takes the heat dissipation substrate as an axis of symmetry, and the upper bridge arm and the lower bridge arm are symmetrically arranged along a direction from the heat dissipation substrate to the first copper-clad substrate.

[0015] In one embodiment, the packaging structure further includes: a plurality of gate terminals, some of the signal terminals are arranged on a side of the first copper-clad substrate away from the heat dissipation substrate and connected to the gate of the upper bridge arm, and the remaining signal terminals are arranged on a side of the second copper-clad substrate away from the heat dissipation substrate and connected to the gate of the lower bridge arm.

[0016] In one embodiment, the package structure includes three full-bridge arms, and the metal terminal further includes three output terminals;

[0017] Each of the full-bridge arms is connected to the positive terminal, the negative terminal, and the midpoint terminal respectively, and each of the full-bridge arms is connected to one of the output terminals in a one-to-one correspondence.

[0018] In one embodiment, the packaging structure further includes:

[0019] a first heat sink, located on a side of the upper bridge arm away from the first copper-clad substrate;

[0020] The second heat sink is located on a side of the lower bridge arm away from the second copper-clad substrate.

[0021] In a second aspect, the present application further provides an electric drive system, which includes the packaging structure of the power module provided in any of the above embodiments.

[0022] In a third aspect, the present application also provides a vehicle comprising an electric drive system as provided in any of the above embodiments.

[0023] In the above-mentioned power module packaging structure, electric drive system, and vehicle, the power module packaging structure includes at least one full-bridge arm, multiple metal terminals, and a first copper-clad substrate, a heat dissipation substrate, and a second copper-clad substrate stacked in sequence. The full-bridge arm includes an upper bridge arm and a lower bridge arm, the upper bridge arm being located on the side of the first copper-clad substrate away from the heat dissipation substrate, and the lower bridge arm being located on the side of the second copper-clad substrate away from the heat dissipation substrate. That is, the power module is arranged in layers, with the lower bridge arm, the second copper-clad substrate, the heat dissipation substrate, the first copper-clad substrate, and the upper bridge arm being arranged from top to bottom. This layered arrangement can reduce the area occupied by the power module and enable the installation of a three-level power module within the limited layout space of an electric vehicle. In addition, the multiple metal terminals include a positive terminal, a negative terminal, a midpoint terminal, and an output terminal, wherein the positive terminal is located on a side of the first copper-clad substrate away from the heat dissipation substrate, the negative terminal is located on a side of the second copper-clad substrate away from the heat dissipation substrate, and the midpoint terminal and the output terminal extend from the first copper-clad substrate to the second copper-clad substrate, respectively. This can reduce the loop area surrounded by the DC bus connected to the metal terminals, thereby reducing stray parameters. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the conventional technology, the following briefly introduces the drawings required for use in the embodiments or the conventional technology descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0025] Figure 1 FIG1 is a top view of a packaging structure of a power module according to an embodiment;

[0026] Figure 2 FIG1 is a bottom view of a packaging structure of a power module according to an embodiment;

[0027] Figure 3 is a schematic cross-sectional view of a packaging structure of a power module according to an embodiment;

[0028] Figure 4 1. A circuit topology diagram of a single full-bridge arm in a packaging structure of a power module according to an embodiment;

[0029] Figure 5 FIG2 is a second top view of the packaging structure of a power module according to an embodiment;

[0030] Figure 6 This is a second bottom view of the packaging structure of a power module according to an embodiment;

[0031] Figure 7FIG3 is a top view of the packaging structure of a power module according to an embodiment;

[0032] Figure 8 This is a circuit topology diagram of three full-bridge arms connected in parallel in a packaging structure of a power module according to an embodiment;

[0033] Figure 9 FIG1 is a top view of three full-bridge arms connected in parallel in a packaging structure of a power module according to an embodiment;

[0034] Figure 10 FIG. 1 is a schematic cross-sectional view of a packaging structure of a power module according to another embodiment.

[0035] Description of reference numerals:

[0036] 100-full bridge arm, 110 upper bridge arm, 111-first reverse conducting insulated gate bipolar transistor, 112-second reverse conducting insulated gate bipolar transistor, 113-first diode, 120-lower bridge arm, 121-third reverse conducting insulated gate bipolar transistor, 122-fourth reverse conducting insulated gate bipolar transistor, 123-second diode, 200-metal terminal, 210-positive terminal, 220-midpoint terminal, 230-negative terminal, 2 40-output terminal, 300-first copper-clad substrate, 400-second copper-clad substrate, 500-heat dissipation substrate, 610-first copper-clad area, 620-second copper-clad area, 630-third copper-clad area, 640-fourth copper-clad area, 650-fifth copper-clad area, 660-sixth copper-clad area, 670-seventh copper-clad area, 680-eighth copper-clad area, 700-gate terminal, 810-first heat sink, 820-second heat sink. DETAILED DESCRIPTION

[0037] To facilitate understanding of the present application, the present application will be described more fully below with reference to the accompanying drawings. The accompanying drawings provide embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0039] It will be understood that the terms "first," "second," and the like used herein may be used herein to describe various elements, but these elements are not limited by these terms. These terms are used only to distinguish a first element from another element. For example, without departing from the scope of this application, a first reverse-conducting insulated gate bipolar transistor may be referred to as a second reverse-conducting insulated gate bipolar transistor, and similarly, a second reverse-conducting insulated gate bipolar transistor may be referred to as a first reverse-conducting insulated gate bipolar transistor. Both the first reverse-conducting insulated gate bipolar transistor and the second reverse-conducting insulated gate bipolar transistor are reverse-conducting insulated gate bipolar transistors, but they are not the same reverse-conducting insulated gate bipolar transistor.

[0040] It is understood that “at least one” refers to one or more, “a plurality” refers to two or more, and “at least a portion of an element” refers to a portion or all of an element.

[0041] As used herein, the singular forms "a," "an," and "the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include," "comprising," "having," and the like specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Furthermore, the term "and / or" as used in this specification includes any and all combinations of the relevant listed items.

[0042] In one embodiment, Figure 1-Figure 3 As shown, the present application provides a power module packaging structure, including at least one full-bridge arm 100, a plurality of metal terminals 200, and a first copper-clad substrate 300, a heat dissipation substrate 500, and a second copper-clad substrate 400 stacked in sequence. The first copper-clad substrate 300 and the second copper-clad substrate 400 can be connected to the heat dissipation substrate 500 via solder layers.

[0043] The plurality of metal terminals 200 include a positive terminal 210, a negative terminal 230, a midpoint terminal 220, and an output terminal 240. The positive terminal 210 is located on the side of the first copper-clad substrate 300 away from the heat dissipation substrate 500, the negative terminal 230 is located on the side of the second copper-clad substrate 400 away from the heat dissipation substrate 500, and the midpoint terminal 220 and the output terminal 240 extend from the first copper-clad substrate 300 to the second copper-clad substrate 400, respectively. The positive terminal 210, the negative terminal 230, the midpoint terminal 220, and the output terminal 240 can be formed as laminated busbars.

[0044] The full-bridge arm 100 includes an upper bridge arm 110 and a lower bridge arm 120. The upper bridge arm 110 is located on the side of the first copper-clad substrate 300 away from the heat dissipation substrate 500, and is respectively connected to the positive terminal 210, the midpoint terminal 220 and the output terminal 240. The lower bridge arm 120 is located on the side of the second copper-clad substrate 400 away from the heat dissipation substrate 500, and is respectively connected to the negative terminal 230, the midpoint terminal 220 and the output terminal 240.

[0045] It can be understood that the positive terminal 210 and the upper bridge arm 110 are arranged on the first copper-clad substrate 300, the negative terminal 230 and the lower bridge arm 120 are arranged on the second copper-clad substrate 400, and the upper bridge arm 110 and the lower bridge arm 120 share the midpoint terminal 220 and the output terminal 240. The positive terminal 210 is used to connect to the positive pole of the power supply, the negative terminal 230 is used to connect to the negative pole of the power supply, and the midpoint terminal 220, after connecting to the full-bridge arm 100, serves as the midpoint of the voltage level. During the application of this power module, each voltage level change is first converted from positive or negative to the midpoint potential, which can obtain a better output waveform and improve electromagnetic interference.

[0046] In an embodiment of the present application, the packaging structure of the power module includes at least one full-bridge arm 100, a plurality of metal terminals 200, and a first copper-clad substrate 300, a heat dissipation substrate 500, and a second copper-clad substrate 400 stacked in sequence. The full-bridge arm 100 includes an upper bridge arm 110 and a lower bridge arm 120. The upper bridge arm 110 is located on the side of the first copper-clad substrate 300 away from the heat dissipation substrate 500, and the lower bridge arm 120 is located on the side of the second copper-clad substrate 400 away from the heat dissipation substrate 500. That is, the power module is arranged in layers, and from top to bottom, the lower bridge arm 120, the second copper-clad substrate 400, the heat dissipation substrate 500, the first copper-clad substrate 300, and the upper bridge arm 110 are arranged in sequence. This layered arrangement can reduce the area occupied by the power module and enable the installation of a three-level power module in the limited layout space of an electric vehicle. In addition, the multiple metal terminals 200 include a positive terminal 210, a negative terminal 230, a midpoint terminal 220 and an output terminal 240, wherein the positive terminal 210 is located on the side of the first copper-clad substrate 300 away from the heat dissipation substrate 500, the negative terminal 230 is located on the side of the second copper-clad substrate 400 away from the heat dissipation substrate 500, and the midpoint terminal 220 and the output terminal 240 extend from the first copper-clad substrate 300 to the second copper-clad substrate 400 respectively. This can reduce the loop area surrounded by the DC bus connected to the metal terminals, thereby reducing stray parameters.

[0047] In one embodiment, Figure 4 and Figure 5As shown, the upper bridge arm 110 includes a first reverse-conducting insulated gate bipolar transistor 111, a second reverse-conducting insulated gate bipolar transistor 112, and a first diode 113. The drain of the second reverse-conducting insulated gate bipolar transistor 112 is connected to the source of the first reverse-conducting insulated gate bipolar transistor, the cathode of the first diode 113, and the output terminal 240, respectively. The drain of the first reverse-conducting insulated gate bipolar transistor is connected to the positive terminal 210, and the anode of the first diode 113 is connected to the midpoint terminal 220.

[0048] In the process of packaging, a reverse-conducting insulated gate bipolar transistor (RC-IGBT) is used. The RC-IGBT packages the IGBT and the diode together, which can reduce the chip size. The IGBT chip and the freewheeling diode chip mainly include a terminal region and a cell region. When the two devices are combined into one chip, the terminal regions can be shared, so the area of the terminal region can be reduced. Generally, the area ratio of the IGBT to the freewheeling diode in a traditional module is about 2:1. The RC-IGBT can save about 1 / 3 of the total chip area while maintaining the basic consistency of the area of the traditional IGBT chip (slightly increased). At the same time, the number of chips is reduced, and the cost of welding chips and binding wires is also saved, which can greatly reduce the chip production cost and packaging test cost.

[0049] Further, as shown in Figure 5 The first copper-clad substrate 300 is also provided with a first copper-clad region 610, a second copper-clad region 620, a third copper-clad region 630, and a fourth copper-clad region 640 on the side away from the heat dissipation substrate 500. The first copper-clad region 610 is provided corresponding to the first reverse-conducting insulated gate bipolar transistor 111 and is in contact with the drain of the first reverse-conducting insulated gate bipolar transistor 111, the positive terminal 210, and the third copper-clad region 630, respectively. The second copper-clad region 620 is provided corresponding to the second reverse-conducting insulated gate bipolar transistor 112 and is in contact with the drain of the second reverse-conducting insulated gate bipolar transistor 112. The third copper-clad region 630 is in contact with the midpoint terminal 220, and the fourth copper-clad region 640 is in contact with the output terminal 240.

[0050] The source of the first reverse-conducting insulated gate bipolar transistor 111 is connected to the second copper-clad region 620 through a binding wire, the source of the second reverse-conducting insulated gate bipolar transistor 112 is connected to the fourth copper-clad region 640 through a binding wire, the cathode of the first diode 113 is connected to the third copper-clad region 630 through a binding wire, and the anode of the first diode 113 is connected to the second copper-clad region 620 through a binding wire.

[0051] The drain of the first reverse-conducting insulated gate bipolar transistor 111 is electrically connected to the positive terminal 210 via the first copper region 610. The source of the first reverse-conducting insulated gate bipolar transistor 111 is connected to the second copper region 620 via a bonding wire, and is then electrically connected to the drain of the second reverse-conducting insulated gate bipolar transistor 112 via the second copper region 620. The source of the second reverse-conducting insulated gate bipolar transistor 112 is connected to the fourth copper region 640 via a bonding wire, and is then electrically connected to the output terminal 240 via the fourth copper region 640. The cathode of the first diode 113 is connected to the third copper region 630 via a bonding wire, and is then electrically connected to the midpoint terminal 220 via the third copper region 630. The anode of the first diode 113 is connected to the second copper region 620 via a bonding wire, and is then electrically connected to the drain of the second reverse-conducting insulated gate bipolar transistor 112 via the second copper region 620.

[0052] In one embodiment, Figure 4 and Figure 6 As shown, the lower bridge arm 120 includes a third reverse conducting insulated gate bipolar transistor, a fourth reverse conducting insulated gate bipolar transistor, and a second diode 123. The source of the third reverse conducting insulated gate bipolar transistor is connected to the drain of the fourth reverse conducting insulated gate bipolar transistor, the anode of the second diode 123, and the output terminal 240, respectively. The source of the fourth reverse conducting insulated gate bipolar transistor is connected to the negative terminal 230, and the cathode of the second diode 123 is connected to the midpoint terminal 220.

[0053] Furthermore, if Figure 6 As shown, a fifth copper-clad region 650, a sixth copper-clad region 660, a seventh copper-clad region 670 and an eighth copper-clad region 680 are further provided on the side of the second copper-clad substrate 400 away from the heat dissipation substrate 500, wherein the fifth copper-clad region 650 is arranged corresponding to the fourth reverse conducting insulated gate bipolar transistor 122, and is respectively in contact with the source, the negative terminal 230 and the seventh copper-clad region 670 of the fourth reverse conducting insulated gate bipolar transistor 122, the sixth copper-clad region 660 is arranged corresponding to the third reverse conducting insulated gate bipolar transistor 121, and is in contact with the source of the third reverse conducting insulated gate bipolar transistor 121, the seventh copper-clad region 670 is in contact with the midpoint terminal 220, and the eighth copper-clad region 680 is in contact with the output terminal 240.

[0054] The drain of the fourth reverse conducting insulated gate bipolar transistor 122 is connected to the sixth copper clad area 660 through a bonding wire, the drain of the third reverse conducting insulated gate bipolar transistor 121 is connected to the eighth copper clad area 680 through a bonding wire, the cathode of the second diode 123 is connected to the seventh copper clad area 670 through a bonding wire, and the anode of the second diode 123 is connected to the sixth copper clad area 660 through a bonding wire.

[0055] It can be understood that the drain of the fourth reverse conducting IGBT 122 is connected to the sixth copper region 660 through a bonding wire, so as to be connected to the source of the third reverse conducting IGBT 121 through the sixth copper region 660, and the source of the fourth reverse conducting IGBT 122 is connected to the negative terminal 230 through the third copper region 630. The drain of the third reverse conducting IGBT 121 is connected to the eighth copper region 680 through a bonding wire, so as to be connected to the output terminal 240 through the eighth copper region 680. The cathode of the second diode 123 is connected to the seventh copper region 670 through a bonding wire, so as to be connected to the midpoint terminal 220 through the seventh copper region 670, and the anode of the second diode 123 is connected to the sixth copper region 660 through a bonding wire, so as to be connected to the source of the third reverse conducting IGBT 121 through the sixth copper region 660.

[0056] In the above embodiment, the area of each copper region is as large as possible, so as to accelerate heat dissipation.

[0057] In one embodiment, the packaging structure is symmetrical about the heat dissipation substrate 500, and the upper bridge arm 110 and the lower bridge arm 120 are symmetrically arranged along the heat dissipation substrate 500 in a direction pointing to the first copper substrate 300.

[0058] In one embodiment, as shown in Figure 7 the packaging structure further comprises a plurality of gate terminals 700, part of the gate terminals are arranged on a side of the first copper substrate 300 away from the heat dissipation substrate 500 and connected to the gate of the upper bridge arm 110, and the remaining gate terminals are arranged on a side of the second copper substrate 400 away from the heat dissipation substrate 500 and connected to the gate of the lower bridge arm 120. Exemplarily, each reverse conducting IGBT is connected to two gate terminals 700 through bonding wires respectively, and each gate terminal 700 is led out through a metal wire for receiving a control signal of an external circuit.

[0059] In one embodiment, the packaging structure comprises three full-bridge arms 100, and the metal terminal 200 further comprises three output terminals 240. Each full-bridge arm 100 is connected to the positive terminal 210, the negative terminal 230 and the midpoint terminal 220 respectively, and each full-bridge arm 100 is connected to one output terminal 240 one by one. The corresponding circuit topology of the three full-bridge arms 100 is shown in Figure 8 The outer shape of the three full-bridge arms 100 after packaging is shown in Figure 9As shown, the three full-bridge arms 100 share a positive terminal 210, a negative terminal 230, and a midpoint terminal 220. Each full-bridge arm 100 is independently provided with an output terminal 240. Furthermore, the first reverse-conducting insulated gate bipolar transistor 111 in each full-bridge arm 100 can share a gate terminal 700, the second reverse-conducting insulated gate bipolar transistor 112 in each full-bridge arm 100 can share a gate terminal 700, the third reverse-conducting insulated gate bipolar transistor 121 in each full-bridge arm 100 can share a gate terminal 700, and the fourth reverse-conducting insulated gate bipolar transistor 122 in each full-bridge arm 100 can share a gate terminal 700. Alternatively, a separate gate terminal 700 can be provided for each reverse-conducting insulated gate bipolar transistor.

[0060] In one embodiment, Figure 10 As shown, the package structure further includes a first heat sink 810 and a second heat sink 820. The first heat sink 810 is located on the side of the upper bridge arm 110 away from the first copper clad substrate 300, and the second heat sink 820 is located on the side of the lower bridge arm 120 away from the second copper clad substrate 400.

[0061] In one embodiment, the present application further provides an electric drive system, which includes the packaging structure of the power module provided in any of the above embodiments.

[0062] In one embodiment, the present application also provides a vehicle, comprising an electric drive system as provided in any of the above embodiments.

[0063] In the description of this specification, reference to the terms "some embodiments" or "other embodiments" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0064] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0065] The above embodiments merely illustrate several embodiments of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the present application shall be determined by the appended claims.

Claims

1. A packaging structure of a power module, characterized in that: include: At least one full-bridge arm, a plurality of metal terminals, and a first copper-clad substrate, a heat dissipation substrate, and a second copper-clad substrate stacked in sequence; wherein, The plurality of metal terminals include a positive terminal, a negative terminal, a midpoint terminal, and an output terminal, wherein the positive terminal is located on a side of the first copper-clad substrate away from the heat dissipation substrate, the negative terminal is located on a side of the second copper-clad substrate away from the heat dissipation substrate, and the midpoint terminal and the output terminal extend along the first copper-clad substrate to the second copper-clad substrate respectively; The full-bridge arm includes an upper bridge arm and a lower bridge arm. The upper bridge arm is located on a side of the first copper-clad substrate away from the heat dissipation substrate, and is respectively connected to the positive terminal, the midpoint terminal and the output terminal. The lower bridge arm is located on a side of the second copper-clad substrate away from the heat dissipation substrate, and is respectively connected to the negative terminal, the midpoint terminal and the output terminal.

2. The packaging structure of the power module according to claim 1, characterized in that: The upper bridge arm includes: a first reverse conducting insulated gate bipolar transistor, a second reverse conducting insulated gate bipolar transistor and a first diode; wherein the drain of the second reverse conducting insulated gate bipolar transistor is respectively connected to the source of the first reverse conducting insulated gate bipolar transistor, the cathode of the first diode and the output terminal, the drain of the first reverse conducting insulated gate bipolar transistor is connected to the positive terminal, and the anode of the first diode is connected to the midpoint terminal.

3. The packaging structure of the power module according to claim 2, characterized in that: A first copper-clad region, a second copper-clad region, a third copper-clad region, and a fourth copper-clad region are further provided on a side of the first copper-clad substrate away from the heat dissipation substrate, wherein the first copper-clad region is provided corresponding to the first reverse-conducting insulated gate bipolar transistor and is in contact with the drain of the first reverse-conducting insulated gate bipolar transistor, the positive terminal, and the third copper-clad region, respectively; the second copper-clad region is provided corresponding to the second reverse-conducting insulated gate bipolar transistor and is in contact with the drain of the second reverse-conducting insulated gate bipolar transistor; the third copper-clad region is in contact with the midpoint terminal; and the fourth copper-clad region is in contact with the output terminal; The source of the first reverse-conducting insulated gate bipolar transistor is connected to the second copper-clad area through a bonding wire, the source of the second reverse-conducting insulated gate bipolar transistor is connected to the fourth copper-clad area through a bonding wire, the cathode of the first diode is connected to the third copper-clad area through a bonding wire, and the anode of the first diode is connected to the second copper-clad area through a bonding wire.

4. The packaging structure of the power module according to claim 1, wherein: The lower bridge arm includes: a third reverse conducting insulated gate bipolar transistor, a fourth reverse conducting insulated gate bipolar transistor and a second diode; wherein the source of the third reverse conducting insulated gate bipolar transistor is respectively connected to the drain of the fourth reverse conducting insulated gate bipolar transistor, the anode of the second diode and the output terminal, the source of the fourth reverse conducting insulated gate bipolar transistor is connected to the negative terminal, and the cathode of the second diode is connected to the midpoint terminal.

5. The packaging structure of the power module according to claim 4, characterized in that: A fifth copper-clad region, a sixth copper-clad region, a seventh copper-clad region, and an eighth copper-clad region are further provided on a side of the second copper-clad substrate away from the heat dissipation substrate, wherein the fifth copper-clad region is provided corresponding to the fourth reverse-conducting insulated gate bipolar transistor and is in contact with the source of the fourth reverse-conducting insulated gate bipolar transistor, the negative terminal, and the seventh copper-clad region, respectively; the sixth copper-clad region is provided corresponding to the third reverse-conducting insulated gate bipolar transistor and is in contact with the source of the third reverse-conducting insulated gate bipolar transistor; the seventh copper-clad region is in contact with the midpoint terminal; and the eighth copper-clad region is in contact with the output terminal; The drain of the fourth reverse conducting insulated gate bipolar transistor is connected to the sixth copper clad area through a bonding wire, the drain of the third reverse conducting insulated gate bipolar transistor is connected to the eighth copper clad area through a bonding wire, the cathode of the second diode is connected to the seventh copper clad area through a bonding wire, and the anode of the second diode is connected to the sixth copper clad area through a bonding wire.

6. The packaging structure of the power module according to claim 1, wherein: The packaging structure takes the heat dissipation substrate as a symmetry axis, and the upper bridge arm and the lower bridge arm are symmetrically arranged along a direction from the heat dissipation substrate to the first copper-clad substrate.

7. The packaging structure of the power module according to claim 1, wherein: The packaging structure also includes: multiple gate terminals, some of the gate terminals are arranged on a side of the first copper-clad substrate away from the heat dissipation substrate and connected to the gate of the upper bridge arm, and the remaining gate terminals are arranged on a side of the second copper-clad substrate away from the heat dissipation substrate and connected to the gate of the lower bridge arm.

8. The packaging structure of the power module according to claim 1, wherein: The packaging structure includes three full-bridge arms, and the metal terminal further includes three output terminals; Each of the full-bridge arms is connected to the positive terminal, the negative terminal, and the midpoint terminal respectively, and each of the full-bridge arms is connected to one of the output terminals in a one-to-one correspondence.

9. The packaging structure of the power module according to claim 1, wherein: The packaging structure further includes: a first heat sink, located on a side of the upper bridge arm away from the first copper-clad substrate; The second heat sink is located on a side of the lower bridge arm away from the second copper-clad substrate.

10. An electric drive system, characterized in that: A packaging structure comprising a power module according to any one of claims 1 to 9.

11. A vehicle, characterized in that: Comprising the electric drive system as claimed in claim 10.

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