Monolithic in-situ integrated light emitting and self-driven detection device and manufacturing method thereof

Abstract

The invention relates to the technical field of semiconductors, and discloses a monolithic in-situ integrated light-emitting and self-driven detection device and a manufacturing method thereof, and the monolithic in-situ integrated light-emitting and self-driven detection device comprises a self-driven ultraviolet detector and an ultraviolet LED which are sequentially connected along an epitaxial growth direction; the self-driven ultraviolet detector is of an Al < x > Ga < 1-x > N / Al < y > Ga < 1-y > N heterojunction structure. According to the invention, in-situ integration with an LED can be realized, the manufacturing process is simplified, the inherent attribute polarization effect of III-V group nitride is fully utilized to realize self-driven detection, the detection wavelength interval can be widened, the Stokes shift problem in a traditional on-chip optical chip can be completely avoided, and the detection capability of an on-chip system is improved; according to the invention, the problems of low light-dark current ratio and poor communication efficiency in the prior art are solved, and the Stokes shift problem can be avoided.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and more specifically, to a monolithic in-situ integrated light emitting and self-driven detection device and a manufacturing method thereof. Background Art

[0002] Compared with traditional wireless radio frequency communication, wireless optical communication technology has the advantages of large channel capacity, strong anti-electromagnetic interference ability and flexible networking, and is a key solution for the sixth generation of mobile communications. The wavelength of 200nm to 280nm belongs to the solar-blind band, so ultraviolet light communication technology has low noise interference and low detection rate, which can ensure the security and confidentiality of data transmission.

[0003] In addition, research on ultraviolet luminescence and ultraviolet detection has attracted widespread attention, and duplex communication of monolithic integrated luminescence and detection is a hot topic. This monolithic integration has the following advantages: a) Realize the detection of signal status; b) Better compactness, robustness and versatility than external detection equipment. At present, AlGaN materials are widely used to prepare ultraviolet light sources and ultraviolet detection devices. This is because AlGaN materials are not only direct bandgap semiconductors, but also have a bandgap of 3.42eV to 6.20eV covering most of the ultraviolet band. Through the unremitting efforts of researchers, people can use multiple epitaxial growth technology to realize the functions of on-chip ultraviolet luminescence and detection, but this method greatly increases the complexity and technical difficulty of the process; for this reason, people began to use the physical properties of the coexistence of multi-quantum well luminescence and detection capabilities to realize the functions of monolithic in-situ integrated ultraviolet luminescence and ultraviolet detection.

[0004] However, this type of luminescence and detection structure with the same structure will face a serious Stokes shift problem, that is, the detection spectrum and the luminescence spectrum are spatially separated, which is very unfavorable to the detection response of the on-chip system, resulting in low light-to-dark current ratio and poor communication efficiency. Although researchers have proposed optimizing the structure of the quantum well region to achieve the regulation of the luminescence spectrum and the detection spectrum to alleviate the Stokes shift problem, it is difficult to fundamentally avoid solving this key problem.

[0005] In summary, how to invent a luminescence and detection model with a high light-to-dark current ratio and good communication efficiency is a technical problem that urgently needs to be solved in this technical field. Summary of the invention

[0006] In order to solve the problems of low light-to-dark current ratio and poor communication efficiency in the prior art, the present invention provides a monolithic in-situ integrated luminescence and self-driven detection device, which has the characteristic of being able to avoid the Stokes shift problem.

[0007] In order to achieve the above-mentioned purpose of the present invention, the technical scheme adopted is as follows:

[0008] A monolithic in-situ integrated luminescence and self-driven detection device, comprising a self-driven ultraviolet detector and an ultraviolet LED connected in sequence along an epitaxial growth direction; the self-driven ultraviolet detector is Al x Ga 1-x N / A y Ga 1-y N heterojunction structure.

[0009] Preferably, the self-driven ultraviolet detector specifically comprises Al x Ga 1-x N absorber layer and Al y Ga 1-y N layer; Al y Ga 1-y The first ohmic electrode is provided on the N layer. x Ga 1-x A second ohmic electrode is provided on the N absorption layer.

[0010] Furthermore, Al x Ga 1-x In the N absorption layer, the coefficients of each component are 0≤x≤1, 0≤1-x≤1, and its thickness is 5nm~5μm; Al y Ga 1-y In the N layer, the coefficients of each component are 0≤y≤1, 0≤1-y≤1, and the thickness is 5nm~5μm, where x>y.

[0011] Furthermore, the ultraviolet LED includes an N-type semiconductor transport layer, a multi-quantum well layer, a P-type electron blocking layer, a P-type semiconductor transport layer, and an insulating layer; a P-type ohmic electrode is provided on the N-type semiconductor transport layer, and an N-type ohmic electrode is provided on the P-type semiconductor transport layer.

[0012] Furthermore, it also includes a substrate, a buffer layer, and a metal reflective layer;

[0013] Substrate, buffer layer, Al x Ga 1-x N absorption layer, Al y Ga 1-y The N layer, the N-type semiconductor transport layer, the multi-quantum well layer, the P-type electron blocking layer, the P-type semiconductor transport layer, the insulating layer, and the metal reflective layer are sequentially arranged along the epitaxial growth direction.

[0014] Furthermore, the material of the substrate is sapphire, AlN, GaN, Si or SiC, and is divided into a polar substrate and a semi-polar substrate according to the epitaxial growth direction.

[0015] Furthermore, the material of the buffer layer is Al x1 In y1 Ga1-x1-y1 N, where the component coefficients are 0 ≤ x1 ≤ 1, 0 ≤ y1 ≤ 1, 0 ≤ 1 - x1 - y1 ≤ 1, and its thickness is 10 - 500 nm; the Al x Ga 1-x N absorption layer, where the component coefficients are 0 ≤ x ≤ 1, 0 ≤ 1 - x ≤ 1, and its thickness is 5 nm - 5 μm; the Al y Ga 1-y N layer, where the component coefficients are 0 ≤ y ≤ 1, 0 ≤ 1 - y ≤ 1, and x < y, and its thickness is 5 nm - 5 μm; the material of the N-type semiconductor transport layer is Al x2 In y2 Ga 1-x2-y2 N, where the component coefficients are 0 ≤ x2 ≤ 1, 0 ≤ y2 ≤ 1, 0 ≤ 1 - x2 - y2 ≤ 1, and its thickness is 500 nm - 5 μm.

[0016] Furthermore, the structure of the multiple quantum well layer is Al x3 In y3 Ga 1-x3-y3 N / Al x4 In y4 Ga 1-x4-y4 N, where the component coefficients are 0 ≤ x3 ≤ 1, 0 ≤ y3 ≤ 1, 0 ≤ 1 - x3 - y3 ≤ 1, 0 ≤ x4 ≤ 1, 0 ≤ y4 ≤ 1, 0 ≤ 1 - x4 - y4 ≤ 1, the bandgap of the quantum barrier is greater than that of the quantum well, the number of quantum wells is greater than or equal to 1, and the thickness of the quantum well Al x3 In y3 Ga 1-x3-y3 N is 1 - 20 nm, and the thickness of the quantum barrier Al x4 In y4 Ga 1-x4-y4 N is 5 - 50 nm.

[0017] Furthermore, the material of the P-type electron blocking layer is Al x5 In y5 Ga 1-x5-y5 N, where the component coefficients are 0 ≤ x5 ≤ 1, 0 ≤ y5 ≤ 1, 0 ≤ 1 - x5 - y5 ≤ 1, and the thickness is 10 nm - 100 nm; the material of the P-type semiconductor transport layer (108) is Al x6 In y6 Ga 1-x6-y6 N, and the components are 0 ≤ x6 ≤ 1, 0 ≤ y6 ≤ 1, 0 ≤ 1 - x6 - y6 ≤ 1, and its thickness is 30 nm - 5 μm.

[0018] A method for manufacturing a monolithic in-situ integrated light-emitting and self-driven detection device, which is used to manufacture the monolithic in-situ integrated light-emitting and self-driven detection device, and the specific steps are as follows:

[0019] By using either a molecular beam epitaxy (MBE) device or an organometallic chemical vapor deposition (MOCVD) device, a self-driven ultraviolet detector and an ultraviolet LED are sequentially grown on the substrate along the epitaxial growth direction;

[0020] By selectively etching portions of the UV LED and detector regions, a trapezoidal terrace is formed on the device and each layer of the UV detector and UV LED is exposed.

[0021] The beneficial effects of the present invention are as follows:

[0022] The present invention discloses a monolithic in-situ integrated luminescence and self-driven detection device. x Ga 1-x N / A y Ga 1-y The N heterojunction structure is used as a self-driven ultraviolet detector, which can not only be integrated with the LED in situ to simplify the process, but also fully utilize the polarization effect, an inherent property of III-V nitrides, to achieve self-driven detection. It can not only broaden the detection wavelength range, but also completely avoid the Stokes shift problem in traditional on-chip optical chips, thereby improving the detection capability of the on-chip system. The present invention thus solves the problems of low light-to-dark current ratio and poor communication efficiency in the prior art, and has the characteristic of being able to avoid the Stokes shift problem. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a schematic diagram of a monolithic in-situ integrated light emitting and self-driven detection device of the present invention.

[0024] Figure 2 The present invention is a modeling flow chart of a monolithic in-situ integrated luminescence and self-driven detection.

[0025] Figure 3 Schematic diagram of epitaxial wafer structure.

[0026] Figure 4 Schematic diagram of the epitaxial wafer structure after the inclined sidewalls and steps are made through photolithography and etching processes.

[0027] Figure 5 Schematic diagram of the integrated device structure of the UV LED and the self-driven UV detector obtained by evaporating metal electrodes.

[0028] Figure 6 The measured emission spectrum of deep ultraviolet LED and the detection spectrum of the same multi-quantum well structure and Al x Ga 1-x N / A y Ga 1-y N heterojunction detection spectrum comparison chart,

[0029] In the figure, 101. substrate, 102. buffer layer, 103. Al x Ga 1-x N absorption layer, 104.Al y Ga 1-y N layer, 105. N-type semiconductor transport layer, 106. multi-quantum well layer, 107. P-type electron blocking layer, 108. P-type semiconductor transport layer, 109. insulating layer, 110. metal reflective layer, 111. the first ohmic electrode, 112. the second ohmic electrode, 113. the third ohmic electrode and 114. the fourth ohmic electrode. DETAILED DESCRIPTION

[0030] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments.

[0031] Example 1

[0032] like Figure 1 As shown, a monolithic in-situ integrated light emitting and self-driven detection device comprises a self-driven ultraviolet detector and an ultraviolet LED connected in sequence along the epitaxial growth direction; the self-driven ultraviolet detector is Al x Ga 1-x N / A y Ga 1-y N heterojunction structure.

[0033] In a specific embodiment, the self-driven ultraviolet detector specifically includes Al x Ga 1-x N absorption layer 103, Al y Ga 1-y N layer 104; Al y Ga 1-y The first ohmic electrode 111 is provided on the N layer 104. x Ga 1-x A second ohmic electrode 112 is provided on the N absorption layer 103 .

[0034] In a specific embodiment, Al x Ga 1-x In the N absorption layer 103, the coefficients of each component are 0≤x≤1, 0≤1-x≤1, and the thickness thereof is 5nm~5μm; Al y Ga 1-y In the N layer 104 , the coefficients of each component are 0≤y≤1, 0≤1-y≤1, and the thickness thereof is 5 nm to 5 μm, wherein x>y.

[0035] In a specific embodiment, the ultraviolet LED includes an N-type semiconductor transport layer 105, a multi-quantum well layer 106, a P-type electron blocking layer 107, a P-type semiconductor transport layer 108, and an insulating layer 109; a P-type ohmic electrode 113 is provided on the N-type semiconductor transport layer 105, and an N-type ohmic electrode 114 is provided on the P-type semiconductor transport layer 108.

[0036] In a specific embodiment, it further includes a substrate 101, a buffer layer 102, and a metal reflection layer 110;

[0037] The substrate 101, the buffer layer 102, A lx Ga 1-x N absorption layer 103, Al y Ga 1-y N layer 104, N-type semiconductor transport layer 105, multi-quantum well layer 106, P-type electron blocking layer 107, P-type semiconductor transport layer 108, insulating layer 109, and metal reflection layer 110 are arranged in sequence along the epitaxial growth direction.

[0038] In a specific embodiment, the material of the substrate 101 is sapphire, AlN, GaN, Si, or SiC, and it is divided into a polar substrate and a semi-polar substrate according to the epitaxial growth direction.

[0039] In a specific embodiment, the material of the buffer layer 102 is Al x1 In y1 Ga 1-x1-y1 N, where the component coefficients are 0 ≤ x1 ≤ 1, 0 ≤ y1 ≤ 1, 0 ≤ 1 - x1 - y1 ≤ 1, and its thickness is 10 - 500 nm; in the Al x Ga 1-x N absorption layer 103, the component coefficients are 0 ≤ x ≤ 1, 0 ≤ 1 - x ≤ 1, and its thickness is 5 nm - 5 μm; in the Al y Ga 1-y N layer 104, the component coefficients are 0 ≤ y ≤ 1, 0 ≤ 1 - y ≤ 1, where x < y, and its thickness is 5 nm - 5 μm; the material of the N-type semiconductor transport layer 105 is Al x2 In y2 Ga 1-x2-y2 N, where the component coefficients are 0 ≤ x2 ≤ 1, 0 ≤ y2 ≤ 1, 0 ≤ 1 - x2 - y2 ≤ 1, and its thickness is 500 nm - 5 μm.

[0040] In a specific embodiment, the structure of the multi-quantum well layer 106 is Al x3 In y3 Ga 1-x3-y3 N / Al x4 In y4 Ga1-x4-y4 N, where the coefficients of each component are 0≤x3≤1, 0≤y3≤1, 0≤1-x3-y3≤1, 0≤x4≤1, 0≤y4≤1, 0≤1-x4-y4≤1, the bandgap of the quantum barrier is greater than the bandgap of the quantum well, the number of quantum wells is greater than or equal to 1, and the quantum well Al x3 In y3 Ga 1-x3-y3 N thickness is 1 to 20 nm, quantum barrier Al x4 In y4 Ga 1-x4-y4 The thickness of N is 5 to 50 nm.

[0041] In a specific embodiment, the material of the P-type electron blocking layer 107 is Al x5 In y5 Ga 1-x5-y5 N, wherein the coefficients of each component are 0≤x5≤1, 0≤y5≤1, 0≤1-x5-y5≤1, and the thickness is 10nm to 100nm; the material of the P-type semiconductor transport layer 108 is Al x6 In y6 Ga 1-x6-y6 N, each component is 0≤x6≤1, 0≤y6≤1, 0≤1-x6-y6≤1, and its thickness is 30nm~5μm.

[0042] In a specific embodiment, the material of the insulating layer 109 can be SiO 2 、Si 3 N 4 , HfO 2 Any one of the above; the material of the metal reflective layer is Al.

[0043] Example 2

[0044] like Figure 2 As shown, a method for manufacturing a monolithic in-situ integrated luminescence and self-driven detection device is used to manufacture the monolithic in-situ integrated luminescence and self-driven detection device, and the specific steps are:

[0045] like Figure 3 As shown in the figure, based on the metal organic chemical vapor deposition method MOCVD equipment, a sapphire substrate, a 50nm AlN buffer layer, a 100nm Al 0.45 Ga 0.55 N absorption layer, 20nm Al 0.65 Ga 0.35 N layer; N-type semiconductor transport layer is 5μm Al 0.60 Ga 0.40 N layer, where the N-type doping concentration is 1×10 20 cm -3, the active region consists of 5 periods of Al 0.60 Ga 0.40 N quantum barrier and Al 0.45 Ga 0.55 N quantum wells, 10nm and 3nm thick, respectively, without intentional doping; followed by a 20nm thick p-Al 0.70 Ga 0.30 N EBL layer, P-type semiconductor transport layer consists of 100nm Al 0.55 Ga 0.45 The N layer and the 50nm GaN layer are composed of a P-type doping concentration of 1×10 20 cm -3 ;

[0046] like Figure 4 As shown, the selected area is first etched to form a trapezoidal terrace, exposing the Al y Ga 1-y N layer 104, N-type semiconductor transport layer 105 of UV LED, multi-quantum well layer 106, P-type electron blocking layer 107, P-type semiconductor transport layer 108, and then further etching is performed to expose Al x Ga 1-x N absorption layer 103; wherein the side wall of the trapezoidal table is at an angle of 70° with the horizontal direction to improve the light extraction efficiency and the photoelectric coupling efficiency;

[0047] like Figure 5 As shown, in this embodiment, SiO is also evaporated on a specific area of ​​the surface based on the atomic layer deposition method. 2 The passivation layer is used to achieve electrical isolation and passivation of defects; Al reflectors and metal electrodes are also evaporated.

[0048] Example 3

[0049] More specifically, a method for manufacturing a monolithic in-situ integrated luminescence and self-driven detection device is provided, and the specific steps are as follows:

[0050] Based on the molecular beam epitaxy MBE equipment, AlN substrate, 100nm AlN buffer layer, 200nm AlN layer and so on are constructed in sequence along the epitaxial growth direction. 0.50 Ga 0.50 N absorption layer, 10nm Al 0.80 Ga 0.20 N layer; N-type semiconductor transport layer is 8μm Al 0.65 Ga 0.35 N layer, where the N-type doping concentration is 1×10 20 cm -3 , the active region consists of 6 periods of Al 0.62 Ga 0.38N quantum barrier and Al 0.49 Ga 0.51 N quantum wells, 15nm and 4nm thick, respectively, and not intentionally doped; followed by a 15nm thick p-Al 0.75 Ga 0.30 N EBL layer, P-type semiconductor transport layer consists of 500nm Al 0.58 Ga 0.42 The N layer and the 100nm GaN layer are composed of a P-type doping concentration of 1×10 20 cm -3 ;

[0051] First, the selected area is etched to form a trapezoidal terrace, exposing the Al y Ga 1-y N layer 104, N-type semiconductor transport layer 105 of UV LED, multi-quantum well layer 106, P-type electron blocking layer 107, P-type semiconductor transport layer 108, and then further etching is performed to expose Al x Ga 1-x N absorption layer 103; wherein the side wall of the trapezoidal table is at an angle of 50° with the horizontal direction to improve the light extraction efficiency and the photoelectric coupling efficiency.

[0052] In this embodiment, Figure 6 As shown, the present invention adopts Al x Ga 1-x N / A y Ga 1-y Compared with the measured emission spectrum of deep ultraviolet LED as a detector in the prior art, the self-driven ultraviolet detector using N heterojunction structure has the following outstanding substantive features and significant progress: (1) Al x Ga 1-x N / A y Ga 1-y The N heterojunction structure is used as the detection area, which can not only be integrated with the LED in situ to simplify the process, but also make full use of the polarization effect, an inherent property of III-V nitrides, to achieve self-driven detection; (2) The components of the detection area are flexible and adjustable, which can not only broaden the detection wavelength range, but also completely avoid the Stokes shift problem in traditional on-chip optical chips, thereby improving the detection capability of the on-chip system; (3) The inclined sidewall is used to promote the transmission of photons to the substrate side, enhance the coupling efficiency, and improve the communication efficiency of the on-chip system.

[0053] Obviously, the above embodiments of the present invention are only examples for clearly explaining the present invention, and are not intended to limit the implementation methods of the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention shall be included in the protection scope of the claims of the present invention.

Claims

1. A monolithic in-situ integrated luminescence and self-driven detection device, characterized in that: It includes a self-driven ultraviolet detector and an ultraviolet LED which are sequentially connected along the epitaxial growth direction; the self-driven ultraviolet detector is Al x Ga 1-x N / A y Ga 1-y N heterojunction structure.

2. The monolithic in-situ integrated light emitting and self-driven detection device according to claim 1, characterized in that: The self-driven ultraviolet detector specifically includes Al x Ga 1-x N absorption layer (103) and Al y Ga 1-y N layer (104); Al y Ga 1-y A first ohmic electrode (111) is provided on the N layer (104), and Al x Ga 1-x A second ohmic electrode (112) is provided on the N absorption layer (103).

3. The monolithic in-situ integrated luminescence and self-driven detection device according to claim 2, characterized in that: Al x Ga 1-x In the N absorption layer (103), the coefficients of each component are 0≤x≤1, 0≤1-x≤1, and the thickness thereof is 5nm-5μm; Al y Ga 1-y In the N layer (104), the coefficients of each component are 0≤y≤1, 0≤1-y≤1, and its thickness is 5nm~5μm, where x>y.

4. The monolithic in-situ integrated light emitting and self-driven detection device according to claim 2, characterized in that: The ultraviolet LED comprises an N-type semiconductor transmission layer (105), a multi-quantum well layer (106), a P-type electron blocking layer (107), a P-type semiconductor transmission layer (108), and an insulating layer (109); a P-type ohmic electrode (113) is provided on the N-type semiconductor transmission layer (105), and an N-type ohmic electrode (114) is provided on the P-type semiconductor transmission layer (108).

5. The monolithic in-situ integrated light emitting and self-driven detection device according to claim 4, characterized in that: It also includes a substrate (101), a buffer layer (102), and a metal reflective layer (110); Substrate (101), buffer layer (102), Al x Ga 1-x N absorption layer (103), Al y Ga 1-y The N layer (104), the N-type semiconductor transmission layer (105), the multi-quantum well layer (106), the P-type electron blocking layer (107), the P-type semiconductor transmission layer (108), the insulating layer (109), and the metal reflective layer (110) are sequentially arranged along the epitaxial growth direction.

6. The monolithic in-situ integrated light emitting and self-driven detection device according to claim 5, characterized in that: The material of the substrate (101) is sapphire, AlN, GaN, Si or SiC, and is divided into a polar substrate and a semi-polar substrate according to the epitaxial growth direction.

7. The monolithic in-situ integrated light emitting and self-driven detection device according to claim 5, characterized in that: The material of the buffer layer (102) is Al x1 In y1 Ga 1-x1-y1 N, where the component coefficients are 0 ≤ x1 ≤ 1, 0 ≤ y1 ≤ 1, 0 ≤ 1 - x1 - y1 ≤ 1, and its thickness is 10 - 500 nm; in the Al x Ga 1-x N absorption layer (103), the component coefficients are 0 ≤ x ≤ 1, 0 ≤ 1 - x ≤ 1, and its thickness is 5 nm - 5 μm; in the Al y Ga 1-y N layer (104), the component coefficients are 0 ≤ y ≤ 1, 0 ≤ 1 - y ≤ 1, where x < y, and its thickness is 5 nm - 5 μm; the material of the N-type semiconductor transport layer (105) is Al x2 In y2 Ga 1-x2-y2 N, where the component coefficients are 0 ≤ x2 ≤ 1, 0 ≤ y2 ≤ 1, 0 ≤ 1 - x2 - y2 ≤ 1, and its thickness is 500 nm - 5 μm.

8. The monolithic in-situ integrated light emitting and self-driven detection device according to claim 4, characterized in that: The structure of the multi-quantum well layer (106) is Al x3 In y3 Ga 1-x3-y3 N / A x4 In y4 Ga 1-x4-y4 N, where the coefficients of each component are 0≤x3≤1, 0≤y3≤1, 0≤1-x3-y3≤1, 0≤x4≤1, 0≤y4≤1, 0≤1-x4-y4≤1, the bandgap of the quantum barrier is greater than the bandgap of the quantum well, the number of quantum wells is greater than or equal to 1, and the quantum well Al x3 In y3 Ga 1-x3-y3 N thickness is 1 to 20 nm, quantum barrier Al x4 In y4 Ga 1-x4-y4 The thickness of N is 5 to 50 nm.

9. The monolithic in-situ integrated light emitting and self-driven detection device according to claim 4, characterized in that: The material of the P-type electron blocking layer (107) is Al x5 In y5 Ga 1-x5-y5 N, wherein the coefficients of each component are 0≤x5≤1, 0≤y5≤1, 0≤1-x5-y5≤1, and the thickness is 10nm to 100nm; the material of the P-type semiconductor transport layer (108) is Al x6 In y6 Ga 1-x6-y6 N, each component is 0≤x6≤1, 0≤y6≤1, 0≤1-x6-y6≤1, and its thickness is 30nm~5μm.

10. A method for manufacturing a monolithic in-situ integrated luminescence and self-driven detection device, characterized in that: The method is used to manufacture the monolithic in-situ integrated light emitting and self-driven detection device as claimed in any one of claims 1 to 9, wherein the specific steps are as follows: By using either a molecular beam epitaxy (MBE) device or an organometallic chemical vapor deposition (MOCVD) device, a self-driven ultraviolet detector and an ultraviolet LED are sequentially grown on the substrate along the epitaxial growth direction; By selectively etching portions of the UV LED and detector regions, a trapezoidal terrace is formed on the device and each layer of the UV detector and UV LED is exposed.

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