Large-aperture hole laser drilling method

Abstract

The invention relates to the technical field of laser drilling operation, in particular to a large-aperture hole laser drilling operation method which comprises a laser drilling machine platform, an insulated wafer is placed on the laser drilling machine platform, and after the wafer is straightened, vacuumizing is conducted through the laser drilling machine platform. And adsorbing and fixing the wafer on the upper surface of the laser drilling machine platform. According to the method for conducting laser drilling operation on the large-aperture holes, related areas need to be punched for multiple times when the holes larger than 100 micrometers are machined, the large holes are formed by combining a plurality of small holes, the capacity limitation of an original machine table is broken through, and the large-size holes can be machined; operation is carried out through multiple times of punching, so that the capacity of an existing machine table is utilized, the machining cost is greatly reduced, and the punching machine can be used for operation of wider product types and has a wider application prospect.

Description

Technical Field

[0001] The invention relates to the technical field of laser drilling operations, in particular to a method for laser drilling large-diameter holes. Background Art

[0002] Laser drilling refers to the laser processing process in which the laser is focused and used as a high-intensity heat source to heat the material, causing the material in the laser action area to melt or gasify and then evaporate, thereby forming a hole. In order to ensure the drilling effect of the laser drilling machine, the maximum laser output spot of the drilling machine laser is less than 100 microns after focusing, so it is impossible to operate large-aperture holes larger than 100 microns, resulting in great operational limitations. Summary of the invention

[0003] The technical problem to be solved by the present invention is that the current laser drilling is unable to operate holes with a large aperture of more than 100 microns, resulting in great operational limitations.

[0004] The technical solution adopted by the present invention to solve its technical problems is: a method for laser drilling large-aperture holes, including a laser drilling machine platform, wherein an insulated wafer is placed on the laser drilling machine platform, and after the wafer is aligned, the laser drilling machine platform is used to evacuate the wafer, and the wafer is adsorbed and fixed on the upper surface of the laser drilling machine platform, and then the wafer is aligned and calibrated through a positioning program, and then the laser drilling machine is used to laser drill holes to penetrate the solder joints of the wafer.

[0005] The laser drilling process includes single-point drilling and step-by-step drilling.

[0006] The single-point drilling generates a laser beam by energizing a laser generator. After the laser beam is calibrated by a lens, the required spot size is obtained. The laser beam is refracted and guided to the laser drilling machine platform where the wafer is placed through the lens assembly inside the laser drilling machine. The laser head is adjusted and acts on the product to punch through the metal of the solder joint and expose it.

[0007] After the step-by-step drilling obtains the required hole depth and hole diameter through single-point drilling, the step-by-step drilling begins according to the designed path, and the entire large-diameter hole is covered along the path by continuous single-point drilling, that is, the large hole is composed of a series of small holes. After the step-by-step drilling operation is completed, the processing of the large hole is completed, and the wafer is taken out from the laser drilling machine platform.

[0008] The lens assembly is composed of three obliquely arranged refractive lenses.

[0009] The solder joints of the wafer are wrapped by a layer of silicon dioxide insulating film.

[0010] The laser drilling machine comprises a hanging frame installed on the top crossbeam, an electric-controlled flip adjusting arm movably installed at the lower end of the hanging frame, and an electric-controlled telescopic adjusting arm slidably sleeved on the outer side of the electric-controlled flip adjusting arm.

[0011] The beneficial effects of the present invention are:

[0012] (1) The laser drilling method of the present invention for processing large-diameter holes requires multiple drillings in the relevant area for processing holes larger than 100 microns, and a large hole is formed by combining multiple small holes, which breaks through the capacity limitation of the original machine and can process large-sized holes;

[0013] (2) By performing multiple punching operations, the existing machine capacity can be utilized, greatly reducing processing costs, allowing it to operate a wider range of product types and having broader application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The present invention is further described below in conjunction with the accompanying drawings and embodiments.

[0015] Figure 1 It is a structural schematic diagram of the present invention.

[0016] Figure 2 It is a schematic diagram of the step-by-step punching method of the present invention. DETAILED DESCRIPTION

[0017] The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic diagrams, which only illustrate the basic structure of the present invention in a schematic manner, and therefore only show the components related to the present invention.

[0018] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0019] Figure 1 and Figure 2 The method of laser drilling large-aperture holes shown in the figure includes a laser drilling machine platform 1. An insulated wafer is placed on the laser drilling machine platform 1. After the wafer 2 is aligned, the laser drilling machine platform 1 is used to evacuate the wafer 2, and the wafer 2 is adsorbed and fixed on the upper surface of the laser drilling machine platform 1. Then, the wafer 2 is aligned and calibrated through a positioning program, and then the laser drilling machine is used to laser drill holes to penetrate the solder joints of the wafer 2.

[0020] The laser drilling process includes single-point drilling and step-by-step drilling.

[0021] Single-point drilling steps: Single-point drilling generates a laser beam by energizing the laser generator 3. The laser beam is calibrated by the lens 4 to obtain the required spot size. The laser beam is refracted and guided to the laser drilling machine platform 1 where the wafer 2 is placed through the lens assembly 5 inside the laser drilling machine. The laser head 6 adjusts and acts on the product to punch through the metal of the solder joint and expose it.

[0022] Step-by-step drilling steps: After the step-by-step drilling obtains the required hole depth and hole diameter through single-point drilling, step-by-step drilling begins according to the designed path. Continuous single-point drilling is used to fill the entire large-diameter hole along the path. That is, the large hole is composed of a series of small holes. After the step-by-step drilling operation is completed, the processing of the large hole is completed and the wafer is removed from the laser drilling machine platform.

[0023] The lens assembly 5 is composed of three obliquely arranged refractive lenses.

[0024] To facilitate processing, the solder joints of wafer 2 are wrapped with a layer of silicon dioxide insulation film. The chip layer of wafer 2 contains hundreds or even more chips, each of which has several solder joints. The purpose of laser drilling is to expose the solder joints of wafer 2 to facilitate the connection of external metal lines to it and realize electrical signal transmission. In other words, the punching allows wafer 2 to be powered.

[0025] In order to cooperate with lateral flipping adjustment and sliding translation extension, the laser drilling machine includes a hanging frame 7 installed on the top crossbeam, an electrically controlled flipping adjustment arm 8 movably installed at the lower end of the hanging frame 7, and an electrically controlled telescopic adjustment arm 9 slidably sleeved on the outside of the electrically controlled flipping adjustment arm 8.

[0026] The laser generator 3, the lens 4 and the topmost refractive lens are fixed inside the hanging frame 7, and the refractive lens on the outside of the lower layer is fixed at the inner angle position of the electrically-controlled flip adjustment arm 8, and the refractive lens on the inside of the bottom layer is fixed at the inner angle position of the electrically-controlled telescopic adjustment arm 9, and the laser head 6 is installed at the light-transmitting port at the lower end of the electrically-controlled telescopic adjustment arm 9.

[0027] The electrically-controlled flip adjusting arm 8 can be flipped laterally along the vertical tube of the hanging frame 7, while the electrically-controlled telescopic adjusting arm 9 can slide and translate along the transverse tube of the electrically-controlled flip adjusting arm 8. The electrically-controlled flip adjusting arm 8 and the electrically-controlled telescopic adjusting arm 9 cooperate with each other to perform small hole drilling.

[0028] The electrically controlled flip adjusting arm 8 is adjusted and controlled by rotating the adjusting motor fixed on the outer surface of the hanging frame 7 and the gear on the adjusting shaft at the lower end of the adjusting motor, while the electrically controlled telescopic adjusting arm 9 is controlled by rotating the electrically controlled screw rod movably installed on the outer wall of the electrically controlled flip adjusting arm 8 to control its lateral translation.

[0029] Based on the above ideal embodiments of the present invention, the relevant staff can make various changes and modifications without departing from the technical concept of the present invention through the above description. The technical scope of the present invention is not limited to the contents of the specification, and its technical scope must be determined according to the scope of the claims.

Claims

1. A method for laser drilling large-diameter holes, comprising a laser drilling machine platform (1), characterized in that: The insulated wafer (2) is placed on the laser drilling machine platform (1). After the wafer (2) is aligned, the laser drilling machine platform is used to evacuate the wafer (2), and the wafer (2) is adsorbed and fixed on the upper surface of the laser drilling machine platform (1). Then, the wafer (2) is aligned and calibrated through an alignment program, and then the laser drilling machine is used to perform laser drilling to penetrate the solder joints of the wafer (2).

2. A method for laser drilling large-diameter holes according to claim 1, characterized in that: The laser drilling process includes single-point drilling and step-by-step drilling.

3. A method for laser drilling large-diameter holes according to claim 2, characterized in that: The single-point drilling is performed by energizing a laser generator (3) to generate a laser beam. The laser beam is calibrated by a lens (4) to obtain a required spot size. The laser beam is refracted and guided to the laser drilling machine platform (1) where the wafer (2) is placed through a lens assembly (5) inside the laser drilling machine. The laser head (6) adjusts the laser beam and acts on the product to expose the metal of the welding point.

4. A method for laser drilling large-diameter holes according to claim 2, characterized in that: After the step-by-step drilling obtains the required hole depth and hole diameter through single-point drilling, the step-by-step drilling begins according to a designed path, and the entire large-diameter hole is filled along the path by continuous single-point drilling, that is, the large hole is composed of a series of small holes. After the step-by-step drilling operation is completed, the processing of the large hole is completed, and the wafer (2) is taken out from the laser drilling machine platform (1).

5. The method for laser drilling a large-diameter hole according to claim 3, characterized in that: The lens assembly (5) is composed of three obliquely arranged refractive lenses.

6. The method for laser drilling a large-diameter hole according to claim 1, characterized in that: The solder joints of the wafer (2) are wrapped by a layer of silicon dioxide insulating film.

7. The method for laser drilling a large-diameter hole according to claim 1, characterized in that: The laser drilling machine comprises a hanging frame (7) mounted on a top crossbeam, an electrically controlled flip adjustment arm (8) movably mounted on the lower end of the hanging frame (7), and an electrically controlled telescopic adjustment arm (9) slidably sleeved on the outside of the electrically controlled flip adjustment arm (8).

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