A blackening process for lithium tantalate wafers

By alternately clamping the upper and lower clamps in the heat treatment furnace, the problem of uneven heating of the clamping end faces of the lithium tantalate wafer was solved, uniform blackening of the wafer surface was achieved, and the optical and electrical properties were improved.

CN119221129BActive Publication Date: 2025-10-17HUNAN KEXINTAI ELECTRONICS CO LTD
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Patent Information

Application Number
CN202411339378.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-09-25
Publication Date
2025-10-17
Estimated Expiration
2044-09-25

AI Technical Summary

Technical Problem

When the lithium tantalate wafer is clamped and fixed, the clamping end surface cannot be fully heated, resulting in uneven blackening and affecting the optical and electrical properties.

Method used

A heat treatment furnace is used to clamp the lithium tantalate wafer. The upper and lower clamps are alternately clamped to ensure that all parts of the wafer are heated evenly. A reducing agent is used to cause a chemical reaction to blacken the wafer surface.

Benefits of technology

The uniform blackening of the surface of the lithium tantalate wafer is achieved, the problem of uneven heating of the clamping end face is avoided, and the optical and electrical properties of the wafer are improved.

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Abstract

The present application belongs to the field of wafer processing, in particular to a lithium tantalate wafer blackening process. The lithium tantalate wafer is supported by the support block at the lower part of the heat treatment box, and the lower part of the lithium tantalate wafer is clamped by the clamping block. The lower part of the wafer is clamped and heated for a certain period of time by the clamping block at the lower part of the heat treatment box. Then, the clamping block at the upper part of the heat treatment box moves to the upper part of the wafer and clamps the upper part of the wafer. The wafer is heated again. The lower part of the lithium tantalate wafer is clamped and heat treated for a certain period of time by the clamping block at the lower part of the heat treatment box. Then, the upper part of the lithium carbonate wafer is clamped and heat treated for a certain period of time by the clamping block at the upper part of the heat treatment box. To some extent, the clamping surface is prevented from being blocked by the clamp, so that the clamping end surface cannot be fully heated, and the blackening effect of the clamping end surface is affected.
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Description

TECHNICAL FIELD

[0001] The application belongs to the field of wafer processing, and particularly relates to a lithium tantalate wafer blackening process. BACKGROUND

[0002] When a lithium tantalate wafer is subjected to a photoetching process, diffuse reflection occurs, which reduces the precision of electrode lines. In order to change the surface properties of the lithium tantalate wafer and enhance the light absorption capacity of the lithium tantalate wafer, the lithium tantalate wafer needs to be subjected to blackening treatment. One way of blackening the lithium tantalate wafer is to heat the lithium tantalate wafer to form a black oxide layer on the surface of the lithium tantalate wafer.

[0003] Some solutions have been proposed in the prior art. For example, a patent application with the publication number CN211339743U discloses a lithium tantalate wafer blackening device. The device includes a containing pipe. The device is provided with through grooves on the jigs. The through grooves of adjacent jigs are staggered to make the nitrogen gas entering the jigs more dispersed, so that the nitrogen gas is uniformly distributed between the lithium tantalate wafers. The reduction agent is fully contacted with the wafers, so that the reaction of the lithium tantalate wafers is uniform and sufficient, and the uniformity of blackening is ensured.

[0004] When the lithium tantalate wafer is subjected to a heating blackening reaction, the lithium tantalate wafer is clamped and fixed by using a corresponding clamp. However, when the lithium tantalate wafer is clamped, the end surface of the lithium tantalate wafer in contact with the clamp is blocked by the clamp and cannot be fully heated, which causes the blackening degree of the clamped end surface to be different from that of other heated parts. The clamped end surface that is not fully heated may not reach the expected blackening depth or property, which affects the optical, electrical or other related performance of the wafer and makes the wafer unable to meet the requirements of specific applications.

[0005] Therefore, the application provides a lithium tantalate wafer blackening process. SUMMARY

[0006] In order to make up for the deficiencies of the prior art and solve at least one technical problem in the background art.

[0007] The technical scheme adopted by the application to solve the technical problems is that the lithium tantalate wafer blackening process comprises the following steps:

[0008] S1: cleaning the lithium tantalate wafer to remove impurities and pollutants on the surface of the lithium tantalate wafer;

[0009] S2: placing the lithium tantalate wafer in a heat treatment furnace and clamping and fixing the lithium tantalate wafer to ensure the stability of the lithium tantalate wafer during blackening;

[0010] S3: heating the wafer by using the heat treatment furnace to provide the energy required for the blackening reaction. At the same time, the reduction agent is injected into the heat treatment furnace, and the reduction agent reacts with the lithium tantalate wafer to blacken the surface of the wafer.

[0011] S4: After the blackening reaction using the heat treatment furnace, the temperature of the wafer is reduced to a suitable range;

[0012] S5: Subsequent processing steps are performed as needed, such as cleaning, annealing, and further improving the performance of the wafer.

[0013] Preferably, the heat treatment furnace for the blackening process of lithium tantalate wafer S includes a heat treatment box, an air inlet valve and a pressure relief valve installed on the top of the heat treatment box, a temperature detector installed on the outer side wall of the heat treatment box, a driving assembly provided at the middle position of the back of the heat treatment box to provide driving force, a clamping assembly provided at the middle position of the upper and lower ends inside the heat treatment box to clamp the lithium tantalate wafer, a linkage assembly provided on the clamping assembly to exert force on the clamping assembly to make it clamp, a pushing assembly provided at the middle position of the upper and lower ends of the heat treatment box to push the clamping assembly to move, and resistance wires installed on both sides of the inside of the heat treatment box to heat the lithium tantalate wafer.

[0014] Preferably, the driving assembly includes a casing fixed at the middle position of the back of the heat treatment box, a double-shaft motor installed at the middle position inside the casing, a driving shaft fixed to the shafts at both ends of the double-shaft motor, and a driving bevel gear fixed to the end of the driving shaft, which is located at the upper and lower ends inside the casing.

[0015] Preferably, the clamping assembly includes a support provided at the middle position of the upper and lower ends inside the heat treatment box, two support blocks fixed on the support, two clamping blocks hingedly connected to the two sides of the support block, and four reset springs provided below the support block, with two reset springs fixed between the two clamping blocks.

[0016] Preferably, the two support blocks are symmetrical on both sides of the centerline of the support, and the two clamping blocks are symmetrical on both sides of the centerline of the support block.

[0017] Preferably, the linkage assembly includes a linkage rod transversely penetrating the support, an elliptical wheel disc fixed to the outside of the linkage rod, the elliptical wheel disc being located between the two clamping blocks, coupling grooves being formed at the upper and lower ends of the middle position of the back of the heat treatment box, and a driven bevel gear being fixed to one end of the linkage rod through the coupling grooves.

[0018] Preferably, the two reset springs are located on both sides of the elliptical wheel disc, the size of the linkage rod is adapted to the size of the coupling groove, and the linkage rod can move up and down in the coupling groove.

[0019] Preferably, the pushing assembly comprises a hydraulic telescopic rod installed at the middle position of the upper and lower ends of the heat treatment box, one end of the hydraulic telescopic rod extends to the inside of the heat treatment box and is fixedly connected with the support, and guide grooves are arranged at both ends of the hydraulic telescopic rod and are arranged on the heat treatment box, and a guide rod longitudinally penetrates the inside of the guide groove and is fixedly connected with the support at one end.

[0020] Preferably, the outer diameter of the guide rod matches the inner diameter of the guide groove, and the guide rod can slide up and down in the guide groove.

[0021] Preferably, two resistance wires are arranged, and the two resistance wires are symmetrical on both sides of the middle line in the inside of the heat treatment box.

[0022] The beneficial effects of the present application are as follows:

[0023] The lithium tantalate wafer blackening process provided by the present application supports the lithium tantalate wafer through the support block below the inside of the heat treatment box, clamps and fixes the lower part of the lithium tantalate wafer through the clamping block, can complete the clamping and fixing work of the lower part of the lithium tantalate wafer, and can prevent the clamping surface from being blocked by the clamp, so that the blackening degree of the part of the wafer is different from that of other heated parts, the clamping end surface that is insufficiently heated cannot reach the expected blackening depth or property, and the optical, electrical or other related performance of the wafer is affected, so that the wafer cannot meet the requirements of specific applications. BRIEF DESCRIPTION OF DRAWINGS

[0024] The present application will be further described below with reference to the drawings.

[0025] Figure 1 is the overall structure in the present application Figure 1 ;

[0026] Figure 2 is the overall structure in the present application Figure 2 ;

[0027] Figure 3 is the overall structure in the present application Figure 3 ;

[0028] Figure 4 is the overall structure of the present application Figure 1 ;

[0029] Figure 5 is the overall structure of the present application Figure 2 ;

[0030] Figure 6 is the local structure of the present application Figure 1 ;

[0031] Figure 7 is the local structure of the present application Figure 2 ;

[0032] In the figure: 1, heat treatment box; 2, inlet valve; 3, pressure relief valve; 4, temperature detector; 5, drive assembly; 51, casing; 52, double-shaft motor; 53, drive shaft; 54, driving bevel gear; 6, linkage assembly; 61, linkage rod; 62, oval wheel disc; 63, driven bevel gear; 64, coupling groove; 7, clamping assembly; 71, bracket; 72, support block; 73, clamping block; 74, return spring; 8, pusher assembly; 81, hydraulic telescopic rod; 82, guide rod; 83, guide groove; 9, resistance wire. DETAILED DESCRIPTION

[0033] In order to make the technical means, creative features, purposes and effects of the present application easy to understand, the present application is further described below in conjunction with specific embodiments.

[0034] As shown in Figures 1 to 7 , a lithium tantalate wafer blackening process of the embodiment of the present application comprises the following steps:

[0035] S1: clean the lithium tantalate wafer to remove impurities and contaminants on the surface:

[0036] S2: place the lithium tantalate wafer in a heat treatment furnace and clamp it to ensure the stability of the lithium tantalate wafer during blackening;

[0037] S3: use the heat treatment furnace to heat the wafer to provide the energy required for blackening reaction, and at the same time, inject a reducing agent into the heat treatment furnace, the reducing agent reacts with the lithium tantalate wafer to blacken the surface of the wafer;

[0038] S4: after the blackening reaction using the heat treatment furnace, reduce the temperature of the wafer to a suitable range;

[0039] S5: perform subsequent processing steps as needed, such as cleaning and annealing, to further improve the performance of the wafer.

[0040] As shown in Figures 1 to 7As shown, the heat treatment furnace for S2 in the lithium tantalate wafer blackening process comprises a heat treatment box 1, an air inlet valve 2 and a pressure relief valve 3 installed on the top of the heat treatment box 1, a temperature detector 4 installed on the outer side wall of the heat treatment box 1, a driving assembly 5 arranged at the middle position of the back of the heat treatment box 1, the driving assembly 5 being used to provide driving force, a clamping assembly 7 arranged at the middle position of the upper and lower ends of the inside of the heat treatment box 1, the clamping assembly 7 being used to clamp the lithium tantalate wafer, a linkage assembly 6 arranged on the clamping assembly 7, the linkage assembly 6 being used to exert force on the clamping assembly 7 to make it clamp, a pushing assembly 8 arranged at the middle position of the upper and lower ends of the heat treatment box 1, the pushing assembly 8 being used to push the clamping assembly 7 to move, and resistance wires 9 installed on both sides of the inside of the heat treatment box 1, the resistance wires 9 being used to heat the lithium tantalate wafer. The box door is opened, the lithium tantalate wafer is placed in the heat treatment box 1, the clamping assembly 7 is used to clamp the lithium tantalate wafer, the box door is closed, the resistance wires 9 are started, the resistance wires 9 heat the clamped lithium tantalate wafer, the temperature detector 4 monitors the temperature inside the heat treatment box 1, the air inlet valve 2 is used to inject reducing agent gas into the inside of the heat treatment box 1, the pressure relief valve 3 is used to release pressure to ensure the pressure inside the heat treatment box 1, after a preset time, the box door is opened, and the lithium tantalate wafer blackened in the heat treatment box 1 is taken out.

[0041] As shown in Figure 2 , Figures 4 to 6 , the driving assembly 5 comprises a casing 51 fixed at the middle position of the back of the heat treatment box 1, a double-shaft motor 52 installed at the middle position of the inside of the casing 51, driving shafts 53 fixed at the two ends of the double-shaft motor 52, and drive bevel gears 54 fixed at the ends of the driving shafts 53 and located at the upper and lower ends of the inside of the casing 51. The double-shaft motor 52 is started, the double-shaft motor 52 drives the drive bevel gears 54 to rotate through the driving shafts 53, and the drive bevel gears 54 located at the upper and lower ends of the double-shaft motor 52 rotate at the same time.

[0042] As shown in Figures 3 to 7 , the clamping assembly 7 comprises a support 71 arranged at the middle position of the upper and lower ends of the inside of the heat treatment box 1, two support blocks 72 fixed on the support 71, two clamping blocks 73 hingedly connected on the two sides of the support blocks 72, four reset springs 74 arranged below the support blocks 72, two reset springs 74 fixed between the two clamping blocks 73, the two support blocks 72 being symmetrical on the two sides of the centerline of the support 71, and the two clamping blocks 73 being symmetrical on the two sides of the centerline of the support blocks 72. The clamping block 73 is divided into a clamping part and a force receiving part, the reset spring 74 is arranged at the force receiving part of the clamping block 73, in the default state, the reset spring 74 does not elastically deform, the clamping part of the clamping block 73 is opened, the lithium tantalate wafer is placed on the top of the support block 72, the force receiving part of the clamping block 73 is pushed out, the clamping part of the clamping block 73 approaches the lithium tantalate wafer, and the clamping block 73 can be clamped.

[0043] like Figures 3 to 7 As shown, the linkage assembly 6 includes a linkage rod 61 that passes through the bracket 71 horizontally. An elliptical wheel 62 is fixed to the outside of the linkage rod 61. The elliptical wheel 62 is placed between two corresponding clamping blocks 73. A coupling groove 64 is provided at the upper and lower ends of the middle position of the back of the heat treatment box 1. One end of the linkage rod 61 extends through the coupling groove 64 to the housing 51 where a driven bevel gear 63 is fixed. Two return springs 74 are located on both sides of the elliptical wheel 62. The size of the linkage rod 61 matches the size of the coupling groove 64, and the linkage rod 61 can move up and down in the coupling groove 64. The rotation of the linkage rod 61 drives the elliptical wheel 62 to rotate. The wider part of the rotating elliptical wheel 62 pushes outward the force-bearing part of the clamping block 73, thereby bringing the clamping parts of the clamping block 73 closer together for clamping.

[0044] like Figures 3 to 7 As shown, the pushing assembly 8 includes a hydraulic telescopic rod 81 installed at the middle position of the upper and lower ends of the heat treatment box 1. One end of the hydraulic telescopic rod 81 extends into the interior of the heat treatment box 1 and is fixedly connected to the bracket 71. Both ends of the hydraulic telescopic rod 81 are provided with a guide groove 83. The guide groove 83 is opened on the heat treatment box 1. A guide rod 82 is longitudinally passed through the interior of the guide groove 83. One end of the guide rod 82 is fixedly connected to the bracket 71. When the hydraulic telescopic rod 81 is activated, the hydraulic telescopic rod 81 pushes the bracket 71 to move, causing the various components on the bracket 71 to move up or down. The guide rod 82 moves inside the guide groove 83, thereby improving the stability of the movement of the bracket 71.

[0045] like Figures 3 to 7 As shown, the outer diameter of the guide rod 82 matches the inner diameter of the guide groove 83 , and the guide rod 82 can slide up and down in the guide groove 83 . Two resistance wires 9 are provided, and the two resistance wires 9 are symmetrical on both sides of the center line inside the heat treatment box 1 .

[0046] Working principle: first, open the door, start the heat treatment box 1 bottom of the hydraulic telescopic rod 81, hydraulic telescopic rod 81 push the heat treatment box 1 inside the bracket 71 under, transverse through the linkage rod 61 in the bracket 71 and the components of the bracket 71 follow up, the linkage rod 61 in the heat treatment box 1 inside the lower end of the linkage groove 64 in the upper move, until the linkage rod 61 upper move to the uppermost end of the linkage groove 64 in the position stop, at this time, the linkage rod 61 end of the driven bevel gear 63 and the double shaft motor 52 lower end of the driving shaft 53 end of the driving bevel gear 54 mesh, driven bevel gear 63 and driving bevel gear 54 can be selected with sharp teeth gear to ensure the stability of the driven bevel gear 63 in the mesh with the driving bevel gear 54 connection, then put the lithium tantalate wafer into the heat treatment box 1, make the lithium tantalate wafer placed in the heat treatment box 1 under the support block 72 on the bracket 71, double shaft motor 52 start, double shaft motor 52 driving driving bevel gear 54 rotation, driving bevel gear 54 driven bevel gear 63 rotation, driven bevel gear 63 linkage rod 61 rotation, rotating linkage rod 61 drive its external oval wheel disc 62 rotation, the wider part of the oval wheel disc 62 gradually push the stress block 73 clamping block, clamping block 73 clamping part moves to the lithium tantalate wafer placed on the support block 72 and clamping, at the same time, the stress block 73 of the stress block 73 will pull the reset spring 74 to make its elongation, using the support block 72 under the heat treatment box 1 to support the lithium tantalate wafer, cooperate with the clamping block 73 to clamp the lower part of the lithium tantalate wafer, the clamping work of the lower part of the lithium tantalate wafer can be completed;

[0047] Secondly, close the door, start the resistance wire 9, resistance wire 9 heating of the clamping lithium tantalate wafer, temperature detector 4 to monitor the temperature of the heat treatment box 1 inside, cooperate with the use of air inlet valve 2 to the inside of the heat treatment box 1 injection of reducing agent gas, while using pressure relief valve 3 to ensure the pressure of the heat treatment box 1 inside;

[0048] After a certain period of heating, the hydraulic telescopic rod 81 at the top of the heat treatment box 1 is started, and the hydraulic telescopic rod 81 pushes down the bracket 71 above the inside of the heat treatment box 1, and the linkage rod 61 transversely penetrating in the bracket 71 and each part of the bracket 71 follow the downward movement, one end of the linkage rod 61 above the inside of the heat treatment box 1 moves downward in the coupling groove 64 until the linkage rod 61 moves to the lowermost position in the coupling groove 64 and stops, at this time, the driven bevel gear 63 at the end of the linkage rod 61 meshes with the driving bevel gear 54 at the end of the driving shaft 53 fixed at the upper end of the double-shaft motor 52, the clamping block 73 above the inside of the heat treatment box 1 moves to the upper part of the lithium tantalate wafer, and at the same time, the double-shaft motor 52 and the hydraulic telescopic rod 81 at the bottom of the heat treatment box 1 are started, the hydraulic telescopic rod 81 at the bottom of the heat treatment box 1 drives the bracket 71 below the inside of the heat treatment box 1 to move downward, so that the driven bevel gear 63 at the end of the linkage rod 61 is separated from the driving bevel gear 54 below the double-shaft motor 52, the driven bevel gear 63 is no longer subjected to the self-locking action of the driving bevel gear 54, the force receiving part of the clamping block 73 below the inside of the heat treatment box 1 loses the pressure action of the elliptical disc 62, and the elongated reset spring 74 drives the force receiving part of the clamping block 73 to approach by using its own elastic force, the clamping part of the clamping block 73 moves away from the lithium tantalate wafer, the clamping block 73 stops clamping the bottom of the lithium tantalate wafer and moves away from the bottom of the lithium tantalate wafer, at the same time, the double-shaft motor 52 drives the driven bevel gear 63 to rotate through the driving bevel gear 54, so that the linkage rod 61 above the inside of the heat treatment box 1 rotates, the linkage rod 61 drives the elliptical disc 62 outside it to rotate, the wider part of the elliptical disc 62 gradually pushes out the force receiving part of the clamping block 73, the clamping part of the clamping block 73 moves to the position of the lithium tantalate wafer and clamps it, at this time, the force receiving part of the clamping block 73 is expanded under the pressure action of the elliptical disc 62, and the force receiving part of the clamping block 73 will pull the reset spring 74 to elongate, in summary, after the lithium tantalate wafer is clamped and heated by the clamping block 73 below the inside of the heat treatment box 1 for a certain period of time, the clamping block 73 above the inside of the heat treatment box 1 moves to the upper part of the lithium tantalate wafer under the action of the hydraulic telescopic rod 81 at the top of the heat treatment box 1 and clamps the upper part of the lithium tantalate wafer, at the same time, the clamping block 73 below the inside of the heat treatment box 1 moves back to the initial position under the action of the hydraulic telescopic rod 81 at the bottom of the heat treatment box 1 and stops clamping the lithium tantalate wafer, at this time, the lithium tantalate wafer is heated again;

[0049] After reaching the preset time, the box door is opened, the hydraulic telescopic rod 81 at the top of the heat treatment box body 1 drives the bracket 71 above the inside of the heat treatment box body 1 to move upwards, the driven bevel gear 63 at the end of the linkage rod 61 is separated from the driving bevel gear 54 above the double-shaft motor 52, the stress part of the clamping block 73 above the inside of the heat treatment box body 1 loses the pressure action of the elliptical disc 62, the elongated reset spring 74 drives the stress part of the clamping block 73 to approach by using the elastic force of itself, and the clamping part of the clamping block 73 is away from the lithium tantalate wafer, so that the clamping block 73 stops clamping the top of the lithium tantalate wafer, and the blackening process of the lithium tantalate wafer in the heat treatment box body 1 is completed.

[0050] By clamping the lithium tantalate wafer upwards and downwards, the clamping surface is prevented from being blocked by the clamp to some extent, so that the part of the wafer is different from other heated parts in the blackening degree, the clamping end surface which is insufficiently heated cannot reach the expected blackening depth or property, thereby affecting the optical, electrical or other related performance of the wafer, and the problem that the wafer cannot meet the requirements of specific applications occurs.

[0051] Another technical solution provided by the present application is to provide a lithium tantalate wafer blackening process, comprising the following steps:

[0052] S1: cleaning the lithium tantalate wafer to remove impurities and pollutants on the surface:

[0053] S2: placing the lithium tantalate wafer in the heat treatment furnace and clamping and fixing it to ensure the stability of the lithium tantalate wafer during blackening;

[0054] S3: heating the wafer using the heat treatment furnace to provide the energy required for blackening reaction, while injecting a reducing agent into the heat treatment furnace, the reducing agent reacts with the lithium tantalate wafer to blacken the surface of the wafer;

[0055] S4: after the blackening reaction using the heat treatment furnace, the temperature of the wafer is reduced to a suitable range;

[0056] S5: subsequent processing steps such as cleaning and annealing are performed as needed to further improve the performance of the wafer.

[0057] The above shows and describes the basic principles, main features and advantages of the present application. It should be understood by those skilled in the art that the present application is not limited by the above examples, and the above examples and descriptions in the specification are only to illustrate the principles of the present application, and various changes and improvements can be made without departing from the spirit and scope of the present application, and these changes and improvements all fall within the scope of the present application. The scope of protection of the present application is defined by the appended claims and their equivalents.

Claims

1. A lithium tantalate wafer blackening process, characterized in that: The following steps are involved: S1: Clean the lithium tantalate wafer to remove surface impurities and contaminants: S2: placing the lithium tantalate wafer in a heat treatment furnace and clamping it to ensure the stability of the lithium tantalate wafer during blackening; S3: Using a heat treatment furnace to heat the wafer to provide the energy required for the blackening reaction, while heating, injecting a reducing agent into the heat treatment furnace, the reducing agent reacts chemically with the lithium tantalate wafer, causing the wafer surface to blacken; S4: After the blackening reaction using a heat treatment furnace, the temperature of the wafer is lowered to a suitable range; S5: Perform subsequent processing steps such as cleaning and annealing as needed to further improve the performance of the wafer; The heat treatment furnace S2 in the blackening process of lithium tantalate wafers includes a heat treatment box, an air intake valve and a pressure relief valve installed on the top of the heat treatment box, a temperature detector installed on the outer wall of the heat treatment box, a driving component is provided at the middle position of the back of the heat treatment box, the driving component is used to provide driving force, clamping components are provided at the middle positions of the upper and lower ends of the heat treatment box, the clamping components are used to clamp the lithium tantalate wafer, a linkage component is provided on the clamping component, the linkage component is used to apply force to the clamping component to clamp it, a pushing component is provided at the middle position of the upper and lower ends of the heat treatment box, the pushing component is used to push the clamping component to move, and resistance wires are installed on both sides of the heat treatment box, and the resistance wires are used to heat the lithium tantalate wafer; The clamping assembly includes a bracket arranged at the middle position of the upper and lower ends of the heat treatment box, two support blocks are fixed on the bracket, two corresponding clamping blocks are hinged on both sides of the support block, four return springs are arranged under the support block, and two return springs are fixed between the corresponding two clamping blocks; The two support blocks are symmetrical on both sides of the midline of the bracket, and the two clamping blocks are symmetrical on both sides of the midline of the support block; When the force-bearing part of the clamping block expands outwards due to the pressure of the elliptical wheel, the force-bearing part of the clamping block will pull the reset spring to extend it, and the support block at the bottom of the heat treatment box is used to support the lithium tantalate wafer. The clamping block is used to clamp the lower part of the lithium tantalate wafer, thus completing the clamping work of the lower part of the lithium tantalate wafer. The force-bearing portion of the clamping block at the bottom of the heat treatment box loses the pressure of the elliptical wheel, and the extended return spring uses its own elastic force to drive the force-bearing portion of the clamping block toward each other, and the clamping portion of the clamping block moves away from the lithium tantalate wafer. The clamping block stops clamping the bottom of the lithium tantalate wafer and moves away from the bottom of the lithium tantalate wafer; After the lithium tantalate wafer is clamped and heated by the clamping block at the bottom of the heat treatment box, the clamping block at the top of the heat treatment box moves down to the upper position of the lithium tantalate wafer under the action of the hydraulic telescopic rod at the top of the heat treatment box and clamps the upper part of the lithium tantalate wafer. At the same time, the clamping block at the bottom of the heat treatment box moves back to the initial position under the action of the hydraulic telescopic rod at the bottom of the heat treatment box and stops clamping the lithium tantalate wafer.

2. The lithium tantalate wafer blackening process according to claim 1, characterized in that: The drive assembly includes a casing fixed at the middle position of the back of the heat treatment box, a dual-axis motor is installed at the middle position inside the casing, the rotating shafts at both ends of the dual-axis motor are fixed with drive shafts, and the ends of the drive shafts are fixed with active bevel gears, which are located at the upper and lower ends inside the casing.

3. The lithium tantalate wafer blackening process according to claim 1, characterized in that: The linkage assembly includes a linkage rod that passes through the bracket horizontally. An elliptical wheel is fixed to the outside of the linkage rod. The elliptical wheel is placed between two corresponding clamping blocks. Connecting grooves are provided at the upper and lower ends of the middle position on the back of the heat treatment box. One end of the linkage rod extends through the connecting groove to the casing where a driven bevel gear is fixed.

4. The lithium tantalate wafer blackening process according to claim 3, characterized in that: Two return springs are located on both sides of the elliptical wheel disc. The size of the linkage rod is adapted to the size of the connection groove, and the linkage rod can move up and down in the connection groove.

5. The lithium tantalate wafer blackening process according to claim 1, characterized in that: The pushing assembly includes a hydraulic telescopic rod installed at the middle position of the upper and lower ends of the heat treatment box. One end of the hydraulic telescopic rod extends to the interior of the heat treatment box and is fixedly connected to the bracket. Both ends of the hydraulic telescopic rod are provided with guide grooves. The guide grooves are opened on the heat treatment box. A guide rod is longitudinally passed through the interior of the guide groove, and one end of the guide rod is fixedly connected to the bracket.

6. The lithium tantalate wafer blackening process according to claim 5, characterized in that: The outer diameter of the guide rod matches the inner diameter of the guide groove, and the guide rod can slide up and down in the guide groove.

7. The lithium tantalate wafer blackening process according to claim 1, characterized in that: Two resistance wires are provided, and the two resistance wires are symmetrical on both sides of the center line inside the heat treatment box.

Citation Information

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