Threshold voltage variation determination method and device, computer equipment and storage medium

Abstract

The invention relates to the technical field of semiconductor detection, in particular to a threshold voltage variation determination method and device, computer equipment and a storage medium. The method comprises the following steps: increasing the gate voltage of a target device from a discharge voltage to a candidate voltage, determining a corresponding detection current value after the gate voltage of the target device reaches the candidate voltage, and recovering the gate voltage of the target device from the candidate voltage to the discharge voltage; and determining a threshold voltage variation corresponding to the target equipment according to the detected current value. When the current value corresponding to the stress voltage is obtained, the influence of defective charging is reduced, the detection current value determination accuracy is improved, the situation that the detection current value is underestimated is prevented, an accurate data basis is provided for subsequent determination of the threshold voltage variation, and the detection accuracy is improved. Therefore, the threshold voltage variation can accurately reflect the degradation condition of the negative bias temperature instability effect, and NBTI degradation better conforms to the actual condition of target equipment.

Description

Technical Field

[0001] The present application relates to the field of semiconductor detection technology, and in particular to a method, device, computer equipment and storage medium for determining a threshold voltage change. Background Art

[0002] With the continuous improvement of semiconductor manufacturing technology, integrated circuits are developing towards high integration, high performance, low power consumption and multi-functions. This is due to the continuous reduction in the feature size of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) devices that constitute its basic unit. However, as the size of MOSFET devices decreases, the electric field strength in the gate oxide layer gradually increases, resulting in the NBTI effect (Negative Bias Temperature Instability) of MOSFET devices becoming more and more serious.

[0003] In the prior art, the detection current value corresponding to the target device can be obtained through an online measurement method. However, since the measured detection current value is already the result after NBTI stress degradation, the accuracy of the detection current value is low, and it is impossible to accurately obtain the threshold voltage change of the target device due to the negative bias temperature instability effect NBTI degradation. Summary of the invention

[0004] Based on this, it is necessary to provide a threshold voltage change determination method, device, computer equipment and storage medium that can accurately obtain the threshold voltage change of the target device due to negative bias temperature instability effect NBTI degradation in response to the above technical problems.

[0005] In a first aspect, the present application provides a method for determining a threshold voltage change. The method comprises:

[0006] Increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage;

[0007] A threshold voltage change corresponding to the target device is determined according to the detection current value.

[0008] In one of the embodiments, the candidate voltage includes a stress voltage;

[0009] The step of increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage includes:

[0010] increasing a gate voltage of a target device from a discharge voltage to a stress voltage;

[0011] After the gate voltage of the target device reaches the stress voltage, current detection is performed on the target device to obtain a first current value among the detection current values ​​corresponding to the test voltage;

[0012] The gate voltage of the target device is restored from the stress voltage to a discharge voltage.

[0013] In one embodiment, determining the threshold voltage change corresponding to the target device according to the detection current value includes:

[0014] A threshold voltage analysis is performed according to a first current value among the detection current values ​​to obtain a threshold voltage variation of the target device due to negative bias temperature instability effect NBTI degradation.

[0015] In one of the embodiments, the candidate voltages include at least one test voltage;

[0016] The step of increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage includes:

[0017] In the order of the test voltages from small to large, the gate voltage of the target device is increased from the discharge voltage to each of the test voltages, and after the gate voltage of the target device reaches each of the test voltages, the target device is subjected to current detection to obtain at least one second current value among the detection current values ​​corresponding to each of the test voltages;

[0018] After obtaining the second current value, the gate voltage of the target device is restored from the corresponding test voltage to a discharge voltage.

[0019] In one of the embodiments, the gate voltage of the target device is increased from the discharge voltage to each of the test voltages in the order from small to large, and the target device is current detected after the gate voltage of the target device reaches each of the test voltages to obtain at least one second current value of the detection current value corresponding to each of the test voltages, including:

[0020] If there is a test voltage with an undetermined second current value, in order of the test voltages from small to large, the minimum test voltage with an undetermined first current value is used as the target voltage, and the gate voltage of the target device is increased from the discharge voltage to the target voltage;

[0021] After the gate voltage of the target device reaches the target voltage, current detection is performed on the target device to obtain a second current value corresponding to the target voltage.

[0022] In one embodiment, the stress voltage is greater than a maximum test current of at least one test voltage.

[0023] In a second aspect, the present application also provides a device for determining a threshold voltage change. The device comprises:

[0024] A first determination module is used to increase the gate voltage of the target device from the discharge voltage to the candidate voltage, determine the detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restore the gate voltage of the target device from the candidate voltage to the discharge voltage;

[0025] The second determination module is used to determine the threshold voltage change corresponding to the target device according to the detection current value.

[0026] In a third aspect, the present application further provides a computer device. The computer device includes a memory and a processor, the memory stores a computer program, and the processor implements the following steps when executing the computer program:

[0027] Increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage;

[0028] A threshold voltage change corresponding to the target device is determined according to the detection current value.

[0029] In a fourth aspect, the present application further provides a computer-readable storage medium. The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the following steps are implemented:

[0030] Increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage;

[0031] A threshold voltage change corresponding to the target device is determined according to the detection current value.

[0032] In a fifth aspect, the present application further provides a computer program product. The computer program product includes a computer program, and when the computer program is executed by a processor, the following steps are implemented:

[0033] Increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage;

[0034] A threshold voltage change corresponding to the target device is determined according to the detection current value.

[0035] The above-mentioned threshold voltage change determination method, device, computer equipment and storage medium increase the gate voltage of the target device from the discharge voltage to the candidate voltage, determine the detection current value corresponding to the gate voltage of the target device after reaching the candidate voltage, so as to obtain the detection current value. After determining the detection current value, the present application will restore the gate voltage of the target device from the candidate voltage to the discharge voltage. Therefore, when the present application finally obtains the current value corresponding to the stress voltage, the influence of defective charging is reduced, the accuracy of the detection current value determination is improved, and the detection current value is prevented from being underestimated, providing an accurate data basis for the subsequent determination of the threshold voltage change. Furthermore, after determining the threshold voltage change corresponding to the target device according to the detection current value, the present application enables the threshold voltage change to accurately reflect the degradation of the negative bias temperature instability effect, so that the NBTI degradation is more in line with the actual situation of the target device. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] FIG1 is an application environment diagram of a method for determining a threshold voltage variation amount provided by an embodiment of the present application;

[0037] FIG2 is a schematic flow chart of a first method for determining a threshold voltage variation provided in an embodiment of the present application;

[0038] FIG3 is a schematic diagram showing a comparison between the NBTI degradation measured by the traditional online measurement method provided in an embodiment of the present application and the actual NBTI degradation;

[0039] FIG4 is a schematic diagram showing a comparison between the NBTI degradation measured by the present application and the actual NBTI degradation provided in an embodiment of the present application;

[0040] FIG5 is a voltage waveform diagram corresponding to the conventional measurement method provided in an embodiment of the present application;

[0041] FIG6 is a voltage waveform diagram corresponding to the present application provided by an embodiment of the present application;

[0042] FIG7 is a flow chart of a second method for determining a threshold voltage variation provided in an embodiment of the present application;

[0043] FIG8 is a schematic flow chart of a third method for determining a threshold voltage variation amount provided in an embodiment of the present application;

[0044] FIG9 is a schematic flow chart of a fourth method for determining a threshold voltage variation amount provided in an embodiment of the present application;

[0045] FIG10 is a structural block diagram of a device for determining a threshold voltage variation amount provided in an embodiment of the present application;

[0046] FIG. 11 is a diagram showing the internal structure of a computer device in one embodiment. DETAILED DESCRIPTION

[0047] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0048] The method for determining the threshold voltage change provided in the embodiment of the present application can be applied in the application environment shown in Figure 1. Among them, the terminal 102 communicates with the server 104 through the network. The data storage system can store the data that the server 104 needs to process. The data storage system can be integrated on the server 104, or it can be placed on the cloud or other network servers. Increase the gate voltage of the target device from the discharge voltage to the candidate voltage, determine the corresponding detection current value after the gate voltage of the target device reaches the candidate voltage, and restore the gate voltage of the target device from the candidate voltage to the discharge voltage; then, according to the detection current value, determine the threshold voltage change corresponding to the target device. Among them, the terminal 102 can be, but is not limited to, various personal computers, laptops, smart phones, tablet computers, Internet of Things devices and portable wearable devices. The Internet of Things devices can be smart speakers, smart TVs, smart air conditioners, smart car-mounted devices, etc. Portable wearable devices can be smart watches, smart bracelets, head-mounted devices, etc. The server 104 can be implemented with an independent server or a server cluster consisting of multiple servers.

[0049] In one embodiment, as shown in FIG. 2 , a method for determining a threshold voltage change is provided, and the method is applied to the server 104 in FIG. 1 as an example for description, including the following steps:

[0050] S201, increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage.

[0051] It should be noted that in the traditional method, a quasi-static DC complete Id-Vg curve (drain-source current-gate-source voltage characteristic curve) measurement method is used, and a step-type gate voltage scan from 0V to the stress voltage is used to obtain a complete Id-Vg characteristic curve, and the current value at the stress voltage is the first current value. In this method, the gate voltage gradually increases from 0V to the stress voltage, and the defects in the gate dielectric layer are always charged. The higher the voltage, the faster the charging speed. Since the traditional quasi-static DC complete Id-Vg measurement method is slow, a considerable part of the defects have been filled with channel carriers during the Id-Vg measurement process, resulting in a drift in the threshold voltage change and a decrease in the amount of electricity. The first current value is exactly the current value at the last stress voltage, which is most affected by the defect charging, resulting in the NBTI degradation measured by the traditional online measurement method being much lower than the true value. The comparison between the NBTI degradation measured by the traditional online measurement method and the true NBTI degradation is shown in Figure 3.

[0052] The present application measures the detection current value based on an improved Id-Vg measurement method based on a DC pulse. A DC pulse is used instead of the traditional step-type gate voltage scan. After each Id-Vg measurement voltage is measured, the gate voltage returns to the discharge voltage (generally set to -1*working voltage) to release the charged defects, and then the next measurement voltage is measured. In this way, the unintentional charging defects introduced at each measurement voltage corresponding to the measurement point are released. When the Id0 at the stress voltage is finally measured, the number of charged defects is much smaller than the traditional quasi-static DC complete Id-Vg measurement, and the measured NBTI degradation is closer to the true value. The comparison between the NBTI degradation measured by this application and the true NBTI degradation is shown in Figure 4.

[0053] Among them, the voltage waveform diagram corresponding to the traditional measurement method is shown in Figure 5, and the voltage waveform diagram corresponding to the present application is shown in Figure 6.

[0054] S202, determining a threshold voltage change corresponding to the target device according to the detected current value.

[0055] In one embodiment of the present application, when it is necessary to determine the threshold voltage change corresponding to the target device, it is necessary to understand the NBTI effect, wherein the NBTI effect refers to the phenomenon that in a PMOS transistor, when the gate is under negative bias and the temperature rises, the traps in the gate oxide layer will capture electrons, causing the threshold voltage to drift in the positive direction. This drift will affect the performance of the transistor, such as delay time and drain current. Therefore, when determining the threshold voltage change corresponding to the target device, a mathematical model describing the relationship between the NBTI effect and the transistor performance can be established. This model may include multiple parameters, such as gate voltage, drain current, threshold voltage, gate oxide thickness, temperature, etc. According to the obtained detection current value and candidate voltage, a mathematical expression describing the relationship between the detection current value Id and the gate voltage Vg and the threshold voltage Vth is fitted. This expression may be a nonlinear equation, which needs to be fitted using mathematical tools (such as Matlab). Furthermore, during the measurement process, the drain current change ΔId before and after the NBTI stress is applied is recorded, and ΔId and known gate voltage, temperature and other parameters are substituted into the previously fitted mathematical model. Through mathematical operations, the threshold voltage change ΔVth caused by the NBTI effect is solved.

[0056] The above-mentioned method for determining the threshold voltage change increases the gate voltage of the target device from the discharge voltage to the candidate voltage, determines the detection current value corresponding to the gate voltage of the target device after reaching the candidate voltage, so as to obtain the detection current value. After determining the detection current value, the present application will restore the gate voltage of the target device from the candidate voltage to the discharge voltage. Therefore, when the present application finally obtains the current value corresponding to the stress voltage, the influence of defective charging is reduced, the accuracy of the determination of the detection current value is improved, and the situation that the detection current value is underestimated is prevented, so as to provide an accurate data basis for the subsequent determination of the threshold voltage change. Furthermore, after determining the threshold voltage change corresponding to the target device according to the detection current value, the present application enables the threshold voltage change to accurately reflect the degradation of the negative bias temperature instability effect, so that the NBTI degradation is more in line with the actual situation of the target device.

[0057] In one embodiment, as shown in FIG. 7 , the candidate voltage includes a stress voltage, so when increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining the detection current value corresponding to the gate voltage of the target device after reaching the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage, the following may be included:

[0058] S701, increasing the gate voltage of the target device from a discharge voltage to a stress voltage.

[0059] In one embodiment of the present application, when it is necessary to increase the gate voltage of the target device from the discharge voltage to the stress voltage, the voltage difference between the discharge voltage and the stress voltage can be determined, and then, the gate voltage of the target device can be increased from the discharge voltage to the stress voltage based on the voltage difference.

[0060] S702 , performing current detection on the target device after the gate voltage of the target device reaches the stress voltage, and obtaining a first current value among the detected current values ​​corresponding to the stress voltage.

[0061] In one embodiment of the present application, it is possible to monitor in real time whether the gate voltage of the target device reaches the stress voltage. If so, current detection is performed on the target device to obtain a first current value among the detection current values ​​corresponding to the test voltage; if not, continue to wait until the first current value among the detection current values ​​corresponding to the test voltage is obtained.

[0062] S703, restoring the gate voltage of the target device from the stress voltage to the discharge voltage.

[0063] It should be noted that in order to ensure the accuracy of the subsequent determination of the detection current value and prevent the detection current value from being affected by defective charging and causing a decrease in accuracy, it is necessary to restore the gate voltage of the target device to the discharge voltage after each current detection of the target device to determine the detection current value.

[0064] Further explanation, in the case where the candidate voltage is a stress voltage, when it is necessary to determine the threshold voltage change corresponding to the target device based on the detection current value, it may include the following: performing a threshold voltage analysis based on the first current value in the detection current value to obtain the threshold voltage change of the target device due to the negative bias temperature instability effect NBTI degradation.

[0065] Since the first current value is less affected by defective charging, the threshold voltage variation determined according to the first current value can accurately reflect the degradation of the negative bias temperature instability effect, so that the NBTI degradation is more consistent with the actual situation of the target device.

[0066] The above-mentioned method for determining the threshold voltage change increases the gate voltage of the target device from the discharge voltage to the stress voltage to obtain the first current value in the detection current value corresponding to the test voltage, and restores the gate voltage of the target device from the stress voltage to the discharge voltage, thereby ensuring that the process of determining the threshold voltage change corresponding to the target device can proceed smoothly, and that the threshold voltage change can accurately reflect the degradation of the negative bias temperature instability effect, so that the NBTI degradation is more in line with the actual situation of the target device.

[0067] In one embodiment, as shown in FIG. 8 , the candidate voltage includes at least one test voltage. Then, in the process of increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining the detection current value corresponding to the gate voltage of the target device after reaching the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage, the following contents may be specifically included:

[0068] S801, increase the gate voltage of the target device from the discharge voltage to each test voltage in the order from small to large, and perform current detection on the target device after the gate voltage of the target device reaches each test voltage to obtain at least one second current value in the detection current value corresponding to each test voltage.

[0069] It should be noted that, in the process of determining at least one second current value among the detection current values ​​corresponding to each test voltage, the following contents may also be included: if there is a test voltage whose second current value has not been determined, then in the order of the test voltages from small to large, the minimum test voltage whose first current value has not been determined is used as the target voltage, and the gate voltage of the target device is increased from the discharge voltage to the target voltage; after the gate voltage of the target device reaches the target voltage, current detection is performed on the target device to obtain the second current value corresponding to the target voltage.

[0070] In one embodiment of the present application, in order of each test voltage from small to large, the minimum test voltage for an undetermined first current value is selected as the target voltage; the gate voltage of the target device is increased from the discharge voltage to the target voltage; after the gate voltage of the target device reaches the target voltage, the target device is current detected to obtain a second current value corresponding to the target voltage; the gate voltage of the target device is restored from the target voltage to the discharge voltage; it is verified whether there are other test currents with undetermined second current values; if so, return to the step of selecting the minimum test voltage for an undetermined first current value as the target voltage in order of each test voltage from small to large, until the current detection for each test voltage is completed.

[0071] S802, after obtaining the second current value, restoring the gate voltage of the target device from the corresponding test voltage to the discharge voltage.

[0072] The stress voltage is greater than a maximum test current of at least one test voltage.

[0073] In one embodiment of the present application, the voltage difference between the test voltage and the discharge voltage is measured, and then, based on the voltage difference, the gate voltage of the target device is restored from the corresponding test voltage to the discharge voltage after the second current value is obtained.

[0074] The above-mentioned method for determining the threshold voltage change increases the gate voltage of the target device from the discharge voltage to each test voltage, and performs current detection on the target device after the gate voltage of the target device reaches each test voltage, obtains at least one second current value among the detection current values ​​corresponding to each test voltage, and restores the gate voltage of the target device from the corresponding test voltage to the discharge voltage after obtaining the second current value, thereby ensuring that when the first current value corresponding to the stress voltage is subsequently determined, the influence of defective charging can be reduced, thereby providing accuracy in the subsequent determination of the threshold voltage change.

[0075] In one embodiment, as shown in FIG. 9 , when it is necessary to determine the threshold voltage change amount corresponding to the target device, the following contents may be specifically included:

[0076] S901, increasing the gate voltage of the target device from a discharge voltage to a stress voltage.

[0077] S902 , performing current detection on the target device after the gate voltage of the target device reaches the stress voltage, and obtaining a first current value among the detected current values ​​corresponding to the stress voltage.

[0078] S903, restoring the gate voltage of the target device from the stress voltage to the discharge voltage.

[0079] S904 , performing threshold voltage analysis according to a first current value in the detected current values, and obtaining a threshold voltage variation of the target device due to negative bias temperature instability effect NBTI degradation.

[0080] The above-mentioned method for determining the threshold voltage change increases the gate voltage of the target device from the discharge voltage to the candidate voltage, determines the detection current value corresponding to the gate voltage of the target device after reaching the candidate voltage, so as to obtain the detection current value. After determining the detection current value, the present application will restore the gate voltage of the target device from the candidate voltage to the discharge voltage. Therefore, when the present application finally obtains the current value corresponding to the stress voltage, the influence of defective charging is reduced, the accuracy of the determination of the detection current value is improved, and the situation that the detection current value is underestimated is prevented, so as to provide an accurate data basis for the subsequent determination of the threshold voltage change. Furthermore, after determining the threshold voltage change corresponding to the target device according to the detection current value, the present application enables the threshold voltage change to accurately reflect the degradation of the negative bias temperature instability effect, so that the NBTI degradation is more in line with the actual situation of the target device.

[0081] It should be understood that, although the steps in the flowcharts involved in the above embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above embodiments may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0082] Based on the same inventive concept, the embodiment of the present application also provides a threshold voltage change determination device for implementing the threshold voltage change determination method involved above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above method, so the specific limitations in one or more threshold voltage change determination device embodiments provided below can refer to the limitations of the threshold voltage change determination method above, and will not be repeated here.

[0083] In one embodiment, as shown in FIG. 10 , a device for determining a threshold voltage variation is provided, comprising a first determining module 10 and a second determining module 20 , wherein:

[0084] The first determination module 10 is used to increase the gate voltage of the target device from the discharge voltage to the candidate voltage, determine the detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restore the gate voltage of the target device from the candidate voltage to the discharge voltage.

[0085] The second determination module 20 is used to determine the threshold voltage change amount corresponding to the target device according to the detection current value.

[0086] In one embodiment, increasing a gate voltage of a target device from a discharge voltage to a stress voltage;

[0087] After the gate voltage of the target device reaches the stress voltage, current detection is performed on the target device to obtain a first current value among the detection current values ​​corresponding to the stress voltage;

[0088] Restore the gate voltage of the target device from the stress voltage to the discharge voltage.

[0089] In one embodiment, a threshold voltage analysis is performed based on a first current value among the detected current values ​​to obtain a threshold voltage variation of the target device due to negative bias temperature instability effect NBTI degradation.

[0090] In one embodiment, the gate voltage of the target device is increased from the discharge voltage to each test voltage in the order from small to large, and the current of the target device is detected after the gate voltage of the target device reaches each test voltage, to obtain at least one second current value of the detected current value corresponding to each test voltage;

[0091] After obtaining the second current value, the gate voltage of the target device is restored from the corresponding test voltage to the discharge voltage.

[0092] In one embodiment, if there is a test voltage with an undetermined second current value, the minimum test voltage with an undetermined first current value is used as the target voltage in the order of the test voltages from small to large, and the gate voltage of the target device is increased from the discharge voltage to the target voltage;

[0093] After the gate voltage of the target device reaches the target voltage, current detection is performed on the target device to obtain a second current value corresponding to the target voltage.

[0094] In one embodiment, the stress voltage is greater than a maximum test current in at least one of the test voltages.

[0095] The above-mentioned threshold voltage change determination device increases the gate voltage of the target device from the discharge voltage to the candidate voltage, determines the detection current value corresponding to the gate voltage of the target device after reaching the candidate voltage, so as to obtain the detection current value. After determining the detection current value, the present application will restore the gate voltage of the target device from the candidate voltage to the discharge voltage. Therefore, when the present application finally obtains the current value corresponding to the stress voltage, the influence of defective charging is reduced, the accuracy of the detection current value determination is improved, and the detection current value is prevented from being underestimated, providing an accurate data basis for the subsequent determination of the threshold voltage change. Furthermore, after determining the threshold voltage change corresponding to the target device according to the detection current value, the present application enables the threshold voltage change to accurately reflect the degradation of the negative bias temperature instability effect, so that the NBTI degradation is more in line with the actual situation of the target device.

[0096] Each module in the above-mentioned threshold voltage variation determination device can be implemented in whole or in part by software, hardware, or a combination thereof. Each module can be embedded in or independent of a processor in a computer device in the form of hardware, or can be stored in a memory in a computer device in the form of software, so that the processor can call and execute operations corresponding to each module above.

[0097] In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be shown in FIG11. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit, and an input device. The processor, the memory, and the input / output interface are connected via a system bus, and the communication interface, the display unit, and the input device are connected to the system bus via the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and an external device. The communication interface of the computer device is used to communicate with an external terminal in a wired or wireless manner, and the wireless manner may be implemented through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. When the computer program is executed by the processor, a method for determining a threshold voltage change is implemented. The display unit of the computer device is used to form a visually visible picture, which may be a display screen, a projection device, or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer covering the display screen, or a button, trackball or touchpad set on the computer device shell, or an external keyboard, touchpad or mouse.

[0098] Those skilled in the art will understand that the structure shown in FIG. 11 is merely a block diagram of a partial structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than shown in the figure, or combine certain components, or have a different arrangement of components.

[0099] In one embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the following steps are implemented:

[0100] Increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to when the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage;

[0101] According to the detection current value, the threshold voltage change corresponding to the target device is determined.

[0102] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0103] Increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage, including:

[0104] increasing a gate voltage of a target device from a discharge voltage to a stress voltage;

[0105] After the gate voltage of the target device reaches the stress voltage, current detection is performed on the target device to obtain a first current value among the detection current values ​​corresponding to the stress voltage;

[0106] Restore the gate voltage of the target device from the stress voltage to the discharge voltage.

[0107] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0108] A threshold voltage analysis is performed according to a first current value in the detection current value to obtain a threshold voltage variation of the target device due to negative bias temperature instability effect NBTI degradation.

[0109] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0110] In the order of the test voltages from small to large, the gate voltage of the target device is increased from the discharge voltage to each test voltage, and after the gate voltage of the target device reaches each test voltage, the target device is subjected to current detection to obtain at least one second current value among the detection current values ​​corresponding to each test voltage;

[0111] After obtaining the second current value, the gate voltage of the target device is restored from the corresponding test voltage to the discharge voltage.

[0112] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0113] If there is a test voltage with an undetermined second current value, in order of the test voltages from small to large, the minimum test voltage with an undetermined first current value is used as the target voltage, and the gate voltage of the target device is increased from the discharge voltage to the target voltage;

[0114] After the gate voltage of the target device reaches the target voltage, current detection is performed on the target device to obtain a second current value corresponding to the target voltage.

[0115] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0116] The stress voltage is greater than a maximum test current in at least one of the test voltages.

[0117] In one embodiment, a computer readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processor, the following steps are implemented:

[0118] Increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to when the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage;

[0119] According to the detection current value, the threshold voltage change corresponding to the target device is determined.

[0120] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0121] Increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage, including:

[0122] increasing a gate voltage of a target device from a discharge voltage to a stress voltage;

[0123] After the gate voltage of the target device reaches the stress voltage, current detection is performed on the target device to obtain a first current value among the detection current values ​​corresponding to the stress voltage;

[0124] Restore the gate voltage of the target device from the stress voltage to the discharge voltage.

[0125] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0126] A threshold voltage analysis is performed according to a first current value in the detection current value to obtain a threshold voltage variation of the target device due to negative bias temperature instability effect NBTI degradation.

[0127] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0128] In the order of the test voltages from small to large, the gate voltage of the target device is increased from the discharge voltage to each test voltage, and after the gate voltage of the target device reaches each test voltage, the target device is subjected to current detection to obtain at least one second current value among the detection current values ​​corresponding to each test voltage;

[0129] After obtaining the second current value, the gate voltage of the target device is restored from the corresponding test voltage to the discharge voltage.

[0130] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0131] If there is a test voltage with an undetermined second current value, in order of the test voltages from small to large, the minimum test voltage with an undetermined first current value is used as the target voltage, and the gate voltage of the target device is increased from the discharge voltage to the target voltage;

[0132] After the gate voltage of the target device reaches the target voltage, current detection is performed on the target device to obtain a second current value corresponding to the target voltage.

[0133] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0134] The stress voltage is greater than a maximum test current in at least one of the test voltages.

[0135] In one embodiment, a computer program product is provided, comprising a computer program, which, when executed by a processor, implements the following steps:

[0136] Increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to when the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage;

[0137] According to the detection current value, the threshold voltage change corresponding to the target device is determined.

[0138] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0139] increasing a gate voltage of a target device from a discharge voltage to a stress voltage;

[0140] After the gate voltage of the target device reaches the stress voltage, current detection is performed on the target device to obtain a first current value among the detection current values ​​corresponding to the stress voltage;

[0141] Restore the gate voltage of the target device from the stress voltage to the discharge voltage.

[0142] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0143] A threshold voltage analysis is performed according to a first current value in the detection current value to obtain a threshold voltage variation of the target device due to negative bias temperature instability effect NBTI degradation.

[0144] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0145] In the order of the test voltages from small to large, the gate voltage of the target device is increased from the discharge voltage to each test voltage, and after the gate voltage of the target device reaches each test voltage, the target device is subjected to current detection to obtain at least one second current value among the detection current values ​​corresponding to each test voltage;

[0146] After obtaining the second current value, the gate voltage of the target device is restored from the corresponding test voltage to the discharge voltage.

[0147] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0148] If there is a test voltage with an undetermined second current value, in order of the test voltages from small to large, the minimum test voltage with an undetermined first current value is used as the target voltage, and the gate voltage of the target device is increased from the discharge voltage to the target voltage;

[0149] After the gate voltage of the target device reaches the target voltage, current detection is performed on the target device to obtain a second current value corresponding to the target voltage.

[0150] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0151] The stress voltage is greater than a maximum test current in at least one of the test voltages.

[0152] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of relevant data must comply with relevant laws, regulations and standards of relevant countries and regions.

[0153] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiments can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but are not limited to this.

[0154] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0155] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A method for determining a threshold voltage change, characterized in that: The method comprises: Increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage; A threshold voltage change corresponding to the target device is determined according to the detection current value.

2. The method according to claim 1, characterized in that The candidate voltage includes a stress voltage; The step of increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage includes: increasing a gate voltage of a target device from a discharge voltage to a stress voltage; After the gate voltage of the target device reaches the stress voltage, current detection is performed on the target device to obtain a first current value among the detection current values ​​corresponding to the stress voltage; The gate voltage of the target device is restored from the stress voltage to a discharge voltage.

3. The method according to claim 2, characterized in that The step of determining a threshold voltage change corresponding to the target device according to the detection current value includes: A threshold voltage analysis is performed according to a first current value among the detection current values ​​to obtain a threshold voltage variation of the target device due to negative bias temperature instability effect NBTI degradation.

4. The method according to claim 1, characterized in that: The candidate voltages include at least one test voltage; The step of increasing the gate voltage of the target device from the discharge voltage to the candidate voltage, determining a detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restoring the gate voltage of the target device from the candidate voltage to the discharge voltage includes: In the order of the test voltages from small to large, the gate voltage of the target device is increased from the discharge voltage to each of the test voltages, and after the gate voltage of the target device reaches each of the test voltages, the target device is subjected to current detection to obtain at least one second current value among the detection current values ​​corresponding to each of the test voltages; After obtaining the second current value, the gate voltage of the target device is restored from the corresponding test voltage to a discharge voltage.

5. The method according to claim 4, characterized in that The method of increasing the gate voltage of the target device from the discharge voltage to each of the test voltages in the order from small to large, and performing current detection on the target device after the gate voltage of the target device reaches each of the test voltages to obtain at least one second current value among the detection current values ​​corresponding to each of the test voltages, comprises: If there is a test voltage with an undetermined second current value, in order of the test voltages from small to large, the minimum test voltage with an undetermined first current value is used as the target voltage, and the gate voltage of the target device is increased from the discharge voltage to the target voltage; After the gate voltage of the target device reaches the target voltage, current detection is performed on the target device to obtain a second current value corresponding to the target voltage.

6. The method according to claim 5, characterized in that The stress voltage is greater than a maximum test current in at least one of the test voltages.

7. A device for determining a threshold voltage change, characterized in that: The device comprises: A first determination module is used to increase the gate voltage of the target device from the discharge voltage to the candidate voltage, determine the detection current value corresponding to the gate voltage of the target device after the gate voltage of the target device reaches the candidate voltage, and restore the gate voltage of the target device from the candidate voltage to the discharge voltage; The second determination module is used to determine the threshold voltage change corresponding to the target device according to the detection current value.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

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