Semiconductor device test method and memory test method

Abstract

The embodiment of the invention provides a semiconductor device test method and a memory test method, and the semiconductor device test method comprises the steps: carrying out the at least one first programming process of a first type of to-be-programmed information; carrying out at least one second programming process on the second type of to-be-programmed information; the information type recorded by the second type of to-be-programmed information is different from that recorded by the first type of to-be-programmed information; if the second programming process fails in programming, carrying out at least one third programming process on the second type of to-be-programmed information failed in programming; the programming position corresponding to the third programming process is different from the programming position corresponding to the second programming process.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of semiconductor technology, and in particular to a semiconductor device testing method and a memory testing method. Background Art

[0002] Semiconductor devices such as dynamic random access memory (DRAM) include anti-fuse units and fuse units. Anti-fuse units or fuse units are mainly used to record important information such as chip identification, trimming information, and repair information of DRAM.

[0003] In DRAM production testing, an algorithm is used to determine the fuse address that needs to be burned for each chip based on the test status of each chip (Die). Generally speaking, the fuse address that needs to be burned for each chip is completely different. In addition, the success rate of each chip during the fuse burning process is also different. Therefore, it is urgent to provide a fuse burning control process and calculation method suitable for mass production testing. Summary of the invention

[0004] In view of this, embodiments of the present disclosure provide a conductor device testing method and a memory testing method.

[0005] According to a first aspect of an embodiment of the present disclosure, a semiconductor device testing method is provided, including: performing a first programming process on a first type of information to be programmed at least once; performing a second programming process on a second type of information to be programmed at least once; the second type of information to be programmed is different from the information type recorded in the first type of information to be programmed; if the second programming process fails, performing a third programming process on the second type of information to be programmed that fails; and the programming position corresponding to the third programming process is different from the programming position corresponding to the second programming process.

[0006] The disclosed embodiment provides another semiconductor device testing method, comprising: performing at least one programming process on information to be programmed; wherein each programming process in the at least one programming process comprises: performing a programming operation on a programming fuse unit to be programmed corresponding to the corresponding information to be programmed; after the programming operation, performing a reading operation on the corresponding programming fuse unit to be programmed; and performing a programming check operation according to a reading result corresponding to the reading operation to check whether the read information is consistent with the corresponding information to be programmed.

[0007] The disclosed embodiment provides another semiconductor device testing method, comprising: performing a first burn-in process three times on a first type of information to be burn-in; performing a second burn-in process three times on a second type of information to be burn-in; the second type of information to be burn-in is different from the information type recorded in the first type of information to be burn-in; if the burn-in process three times fails, performing a third burn-in process three times on the second type of information to be burn-in that failed; the burn-in position corresponding to the third burn-in process is different from the burn-in position corresponding to the second burn-in process; performing the first burn-in process three times, the second burn-in process three times, or the third burn-in process three times, comprising: performing a first first burn-in operation, a second burn-in operation, or a third burn-in operation on all the programming fuse units to be burn-in corresponding to the corresponding information to be burn-in, and then performing a first first read operation, a second read operation, or a third read operation Three read operations, and perform the first first write check operation, the second write check operation or the third write check operation according to the read results; perform the second first write operation, the second write operation or the third write operation on the programming fuse unit that fails the first write, and then perform the second first read operation, the second read operation or the third read operation, and perform the second first write check operation, the second write check operation or the third write check operation according to the read results; perform the third first write operation, the second write operation or the third write operation on the programming fuse unit that fails the second write, and then perform the third first read operation, the second read operation or the third read operation, and perform the third first write check operation, the second write check operation or the third write check operation according to the read results.

[0008] According to a second aspect of an embodiment of the present disclosure, there is provided a memory testing method, including: a semiconductor device testing method applied to a dynamic random access memory, including: any one of the above-mentioned solutions.

[0009] In each embodiment of the present disclosure, different burning processes are used for different types of information to be burned. Specifically, the first burning process is performed at least once for the first type of information to be burned, the second burning process is performed at least once for the second type of information to be burned, and the third burning process is performed at least once at a different position from the burning position corresponding to the second burning process for the second type of information to be burned that fails to be burned. In this way, a more appropriate burning process is formulated for different types of information to be burned, and for all information to be burned for each semiconductor device, the writing success rate of all information to be burned can be guaranteed, and for all burning processes for each semiconductor device, the stability and reliability of all burning processes can be guaranteed, and the total time of all burning processes can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1A A cross-sectional schematic diagram of an anti-fuse unit before programming provided by an embodiment of the present disclosure;

[0011] Figure 1B A cross-sectional schematic diagram of an anti-fuse unit after programming provided by an embodiment of the present disclosure;

[0012] Figure 1C for Figure 1A and Figure 1B Schematic diagram of resistance states of the anti-fuse unit before and after programming;

[0013] Figure 2 A schematic diagram of a process framework of a semiconductor device testing method provided by an embodiment of the present disclosure;

[0014] Figure 3 One of the flowcharts of a semiconductor device testing method provided by an embodiment of the present disclosure;

[0015] Figure 4 A second flow chart of a semiconductor device testing method provided by an embodiment of the present disclosure;

[0016] Figure 5 A third flowchart of a semiconductor device testing method provided by an embodiment of the present disclosure;

[0017] Figure 6 A fourth flowchart of a semiconductor device testing method provided by an embodiment of the present disclosure;

[0018] Figure 7 A schematic diagram of a first programming process of a semiconductor device testing method provided by an embodiment of the present disclosure;

[0019] Figure 8 A schematic diagram of a second programming process and a third programming process of a semiconductor device testing method provided by an embodiment of the present disclosure;

[0020] Fig. 9 A schematic flow chart of an inspection operation of a semiconductor device testing method provided by an embodiment of the present disclosure;

[0021] Fig.10 A schematic diagram of a one-time programming process of a semiconductor device testing method provided by an embodiment of the present disclosure;

[0022] Fig.11 The fifth flowchart of a semiconductor device testing method provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0023] The following will be combined with the embodiments of the present disclosure and the accompanying drawings to clearly and completely describe the technical solutions in the embodiments of the present disclosure. The described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0024] In the following description, a large number of specific details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present disclosure, some technical features known in the art are not described; that is, all features of actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0025] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present disclosure. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0026] In order to thoroughly understand the present disclosure, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present disclosure. The preferred embodiments of the present disclosure are described in detail below, but in addition to these detailed descriptions, the present disclosure may also have other implementations.

[0027] As a one-time programmable device (OTP), the anti-fuse unit and the fuse unit are widely used in memories such as DRAM and NAND.

[0028] Figure 1A and Figure 1B Schematic cross-sectional views of an anti-fuse unit before and after programming provided by an embodiment of the present disclosure. Figure 1A and Figure 1B The anti-fuse unit 100 is a semiconductor device composed of two conductive layers 102 and 106 and a dielectric layer 104 between the conductive layers 102 and 106. The dielectric layer 104 can be set as a thin layer that is easily broken down.

[0029] refer to Figure 1ABefore programming, the conductive layer is separated by a dielectric layer, and both ends of the anti-fuse unit are disconnected. Figure 1B After programming (external high voltage), the dielectric layer is broken down by the high electric field, a leakage path LP is formed between the conductive layers on both sides, the two conductive layers 102 and 106 are electrically connected, and the anti-fuse unit is short-circuited (melted). This melting process (programming process) is physically one-time, permanent, and irreversible. The two states of the anti-fuse unit melting and breaking can represent logic "0" and logic "1" respectively.

[0030] Figure 1C for Figure 1A and Figure 1B Schematic diagram of the anti-fuse unit before and after programming. Figure 1C Before programming, the conductive layer is separated by the dielectric layer, and the two ends of the anti-fuse unit are open circuited and in a high resistance state; after programming, the dielectric layer is broken down by the high electric field, and an electrical connection is formed between the conductive layers on both sides, and the anti-fuse unit is short-circuited and in a low resistance state.

[0031] Accordingly, the fuse unit ( Figure 1A , Figure 1B for Figure 1C (not shown) can also be used as a one-time programmable device. The fuse unit is a semiconductor device composed of two conductive layers and an electric fuse between the two conductive layers. The electric fuse can be set to be easily blown. Before programming, the conductive layer electric fuse is connected, the two ends of the fuse unit are conductive, and the fuse unit is in a low resistance state. After programming (external high voltage or current), the electric fuse is blown, the two ends of the fuse unit are disconnected, and the fuse unit is in a high resistance state. The two states of the fuse unit being conductive and disconnected can represent logic "1" and logic "0" respectively. As an OTP, the fuse unit or anti-fuse unit has different resistance states before and after programming, which is used to burn and record the necessary information of DRAM, NAND and other memories, for example, recording the chip identification, trimming information, and repair information of DRAM, and is widely used in the design and production of DRAM chips. The necessary information recorded by the fuse unit or anti-fuse unit is crucial to the normal operation of DRAM. Usually, each DRAM chip is designed with thousands to hundreds of thousands of fuse units or anti-fuse units. Any abnormality in the information of a fuse unit or anti-fuse unit may cause the failure of the DRAM chip.

[0032] Generally speaking, the fuse address required to be burned for each DRAM chip is different. In addition, the success rate of each DRAM chip during the fuse burning process is also different. Therefore, it is necessary to provide a set of fuse burning control processes and calculation methods suitable for mass production testing to ensure the stability and reliability of each DRAM chip during the fuse burning process, while reducing the burning process test time.

[0033] Figure 2A schematic diagram of a process framework of a semiconductor device testing method provided by an embodiment of the present disclosure. Figure 2 After the semiconductor device testing method starts, after the following steps S201 to S205 are sequentially executed, the semiconductor device testing method ends, and the specific details of sequentially executing the following steps S201 to S205 are as follows:

[0034] Execute step S201, a first pre-programming process test.

[0035] It should be noted that the first programming process includes direct current (DC) programming, and DC programming is used to program parameters such as internal voltage, trimming information, chip identification, etc. of semiconductor devices (hereinafter, DRAM chips are used as an example for explanation). Exemplarily, the pre-test of the first programming process includes internal voltage testing, etc., which is used to obtain information such as the trimming required for the chip.

[0036] Execute step S202, a second pre-programming process test.

[0037] It should be noted that the second programming process includes alternating current (AC) programming, and AC programming is used to program information related to repair, such as repair information. Exemplarily, the pre-test of the second programming process includes functional testing, margin testing, etc., for obtaining the repair information of the chip.

[0038] Execute step S203 to confirm the burning plan.

[0039] Exemplarily, different burning schemes for different types of information are determined according to the aforementioned chip repair-required information and chip repair information.

[0040] Execute step S204 to program the fuse.

[0041] Exemplarily, according to the determined programming scheme, fuse programming includes programming parameters such as internal voltage of the chip, trimming information, chip identification, etc.; fuse programming includes programming information related to the repair, for example, the repair information.

[0042] Execute step S205, and perform detection after the programming process.

[0043] Exemplarily, the post-programming process detection includes determining the effect after programming (or fusing), such as internal voltage accuracy test, repair success test, etc.

[0044] Figure 3 One of the flowcharts of a semiconductor device testing method provided by an embodiment of the present disclosure; Figure 4The second flowchart of a semiconductor device testing method provided by the embodiment of the present disclosure. Figure 3 and Figure 4 According to a first aspect of an embodiment of the present disclosure, a semiconductor device testing method is provided, comprising:

[0045] Performing at least one first programming process on the first type of information to be programmed;

[0046] Performing at least one second programming process on the second type of information to be programmed; the second type of information to be programmed is different from the first type of information to be programmed;

[0047] If the second programming process fails, the third programming process is performed at least once on the second type of information to be programmed that failed to be programmed; the programming position corresponding to the third programming process is different from the programming position corresponding to the second programming process.

[0048] In some embodiments, the programming fuse units to be written corresponding to the first type of information to be written are fixed programming fuse units; and the programming fuse units to be written corresponding to the second type of information to be written are allowed to be reallocated.

[0049] Here, the semiconductor device includes but is not limited to a DRAM chip. In the following, only a DRAM chip is used as an example for explanation.

[0050] In some embodiments, as described above, before performing the first programming process and the second programming process, the information to be programmed of the semiconductor device is obtained, and the information to be programmed is classified into a first category of information to be programmed and a second category of information to be programmed. The first programming process is performed on the first category of information to be programmed; the second programming process is performed on the second category of information to be programmed, and the third programming process is performed on the second category of information to be programmed that fails to be programmed.

[0051] In some embodiments, the first type of information to be written includes parameters such as internal voltage of the semiconductor device, trim information, chip identification, etc. In some specific embodiments, the first writing process is used to write parameters such as internal voltage of the DRAM chip, trim information, chip identification, etc. The second writing process is used to write the second type of information to be written.

[0052] In some embodiments, the second type of information to be written includes information related to repair of the semiconductor device, such as repair information. In some specific embodiments, the second writing process is used to write information related to repair of the DRAM chip, such as repair information of row and column addresses of storage cells.

[0053] It should be noted that the fuse unit or anti-fuse unit is an electrically programmable fuse (efuse, electrically programmable fuse) unit (hereinafter referred to as programming fuse or programming fuse unit). The programming fuse unit to be programmed can be understood as the aforementioned fuse unit or anti-fuse unit. The functional types of the programming fuse units to be programmed corresponding to the first programming process and the second programming process are different. Specifically:

[0054] The programming fuse units to be burned corresponding to the first burning process are used to burn the first type of information to be burned. These programming fuse units to be burned are fixed programming fuse units whose positions cannot be changed. It can be understood that the programming fuse units corresponding to the first burning process are used to burn information such as trimming voltage. If the burning of trimming voltage and other information is unsuccessful, the trimming voltage will deviate from the expected value and will be unusable, which may cause the semiconductor device to be unqualified. In other words, the programming fuse units to be burned corresponding to the first type of information to be burned are not allowed to be replaced.

[0055] The programming fuse unit to be burned corresponding to the second burning process is used to burn the second type of information to be burned. Exemplarily, the programming fuse unit corresponding to the second burning process is used to burn row / column repair information, if the burning of row / column repair information is unsuccessful, because the redundant row / column programming fuse unit that can repair the faulty row / column is not unique, if the programming fuse units corresponding to some allocated redundant rows / columns fail to burn, the redundant rows / columns can be allocated again, and the programming fuse units corresponding to the redundant rows / columns allocated again can be used to continue to burn the row / column repair information, so as to achieve the effect of repair, so as not to cause the semiconductor device to be unqualified due to the failure of the second burning process. In other words, the programming fuse unit to be burned corresponding to the second type of information to be burned allows replacement. In some embodiments, the first type of information to be burned can be burned first, and then the second type of information to be burned; or, the second type of information to be burned can be burned first; and then the first type of information to be burned can be burned.

[0056] refer to Figure 3 In some embodiments, the method further comprises:

[0057] After the first programming process is successfully programmed, a second programming process is performed on the second type of information to be programmed.

[0058] Exemplarily, after executing step S302 and completing the first programming process, execute step S303 to perform the second programming process. If after executing step S303, there is still the second type of information to be programmed that has failed to be programmed, execute step S304 to perform the third programming process for the second type of information to be programmed that has failed to be programmed. Figure 4 In some embodiments, the method further comprises:

[0059] After the second programming process is successfully programmed, the first programming process is executed on the first type of information to be programmed.

[0060] Exemplarily, step S402 is executed to perform the second programming process; step S404 is executed to perform the first programming process after the second programming process is completed. If after step S402 is executed, there is still second-type information to be programmed that has failed to be programmed; then after the second programming process is completed, step S403 is executed to perform the third programming process for the second-type information to be programmed that has failed to be programmed; and step S404 is executed after step S403 is executed.

[0061] It can be understood that failure in burning the first type of information to be burned will cause the semiconductor device to be unqualified, while failure in burning the second type of information to be burned can be replaced by replacing the programming fuse unit and re-burning. After the first burning process is successfully burned, executing the second burning process for the second type of information to be burned can avoid the problem of a long time for judging the semiconductor device to be unqualified due to the failure of the first burning process after the second burning process is successfully burned, thereby reducing the average burning time of the semiconductor device.

[0062] In some embodiments, the method further comprises:

[0063] Before executing the first programming process, performing a pre-programming fuse unit reading operation to determine a reference state of the programming fuse unit;

[0064] The reference state of the programming fuse cells is used to exclude the programming fuse cells that have been programmed, and at least part of the remaining programming fuse cells are used as programming fuse cells to be programmed.

[0065] like Figure 3 Step S301, Figure 4 Step S401, Figure 5 Step S501, Figure 6 Step S601, Fig.11 In step S1101, a pre-programmed fuse unit reading operation is added to determine the reference state of the programming fuse unit, and subsequent calculation processing is performed on this basis. For example, it is determined whether there are programming fuse units that have been burned or programming fuse units that are naturally burned in the programming fuse unit. It can be understood that the programming fuse unit to be burned needs to exclude the programming fuse unit that has been burned.

[0066] In some embodiments, the method further comprises:

[0067] After the second programming process is successfully programmed or the third programming process is successfully programmed, a post-programming fuse unit reading operation and a post-programming check operation are performed;

[0068] The judgment standard of the programming fuse unit burning through resistance corresponding to the post-programming fuse unit reading operation is lower than the judgment standard of the programming fuse unit burning through resistance corresponding to the reading operation in the first, second and third programming processes.

[0069] Compared with the tighter criteria (or higher criteria) used in the first programming process, the second programming process, and the third programming process, a looser criteria (or lower criteria) is used in the post-programming fuse cell reading operation.

[0070] Exemplarily, if the programming fuse unit is an anti-fuse unit, the judgment standard resistance value of the anti-fuse unit fuse resistance corresponding to the post-anti-fuse unit read operation is greater than the judgment standard resistance value of the anti-fuse unit fuse resistance corresponding to the read operation in the first burning process, the second burning process and the third burning process.

[0071] Exemplarily, if the programming fuse unit is a fuse unit, the judgment standard resistance value of the fuse unit blown resistance corresponding to the post-fuse unit reading operation is smaller than the judgment standard resistance value of the fuse unit blown resistance corresponding to the reading operation in the first, second and third programming processes.

[0072] like Figure 3 Step S305, Figure 4 Step S405, Figure 5 Step S505, Figure 6 Step S605, Fig.11 In step S1105, in the first programming process, the second programming process and the third programming process, a tighter standard (or a higher standard) is used to judge whether the anti-fuse unit has been programmed (for example, a lower resistance value is used to judge whether the anti-fuse unit has been programmed), which is mainly used to ensure that the anti-fuse unit is reliably broken down to reach a short-circuit (fused) state.

[0073] A post-anti-fuse unit reading operation is added, and a looser standard is used to judge the state of the anti-fuse unit (for example, a higher resistance value is used to judge the state of the anti-fuse unit), which is mainly used to check whether other anti-fuse units not to be written are damaged during the process of burning the anti-fuse unit. Exemplarily, if other anti-fuse units not to be written are damaged or the burning of the anti-fuse unit to be written fails, the semiconductor device is unqualified.

[0074] Exemplarily, a post anti-fuse unit read operation and a post check operation are performed, such as a post-programming process detection to determine the effect after programming (or fusing): such as internal voltage accuracy test, repair success test, etc.

[0075] For more details, please refer to Figure 2 Understand the relevant content of step S205 in .

[0076] Figure 5 The third flowchart of a semiconductor device testing method provided by the embodiment of the present disclosure. Figure 5 In some embodiments, performing at least one of the first programming process, the second programming process, or the third programming process comprises:

[0077] Performing a corresponding first programming operation, a second programming operation or a third programming operation on a programming fuse unit to be programmed corresponding to corresponding information to be programmed;

[0078] After the first programming operation, the second programming operation or the third programming operation, a corresponding first reading operation, a second reading operation or a third reading operation is performed on the corresponding programming fuse unit to be programmed;

[0079] According to the corresponding reading result of the first reading operation, the second reading operation or the third reading operation, the corresponding first programming check operation, the second programming check operation or the third programming check operation is performed to check whether the read information is consistent with the corresponding information to be programmed.

[0080] The writing operation (including the first writing operation, the second writing operation or the third writing operation) is used to write the first type of information to be written, the second type of information to be written or the second type of information to be written that fails to be written into the programming fuse unit; the reading operation (including the first reading operation, the second reading operation or the third reading operation) is used to read the information stored in the corresponding programming fuse unit that has passed the writing; the writing check operation (including the first writing check operation, the second writing check operation or the third writing check operation) is used to check whether the information read from the corresponding programming fuse unit that has passed the writing is consistent with the written first type of information to be written, the second type of information to be written or the second type of information to be written that fails to be written.

[0081] Exemplarily, step S502 is executed to perform a first programming process, which includes a first programming operation, a first reading operation and a first programming check operation; or, the first programming process is performed multiple times, and each first programming process includes a first programming operation, a first reading operation and a first programming check operation.

[0082] The first writing operation can write the corresponding programming fuse unit in the semiconductor device and write the first type of information to be written into the programming fuse unit; the first reading operation can read the information stored in the corresponding programming fuse unit that has passed the writing; the first writing check operation can check whether the information read from the corresponding programming fuse unit that has passed the writing is consistent with the written first type of information to be written.

[0083] Accordingly, step S503 is executed to perform a second programming process once, or the second programming process is performed multiple times; step S504 is executed to perform a third programming process once, or the third programming process is performed multiple times. Each second programming process or each third programming process includes a corresponding programming operation, a read operation, and a programming check operation; the corresponding programming operation, the read operation, and the programming check operation correspond to the corresponding information to be programmed (including the second type of programming information or the second type of programming information to be programmed that failed to be programmed). The specific details of the corresponding programming operation, the read operation, and the programming check operation can be understood by referring to the example of the first programming process described above, and will not be repeated here.

[0084] Figure 6 The fourth flowchart of a semiconductor device testing method provided by the embodiment of the present disclosure. Figure 6 In some embodiments, performing at least one of the first programming process, the second programming process, or the third programming process includes:

[0085] performing at least one of the first programming process, the second programming process, or the third programming process multiple times;

[0086] Performing the first programming process, the second programming process or the third programming process multiple times includes:

[0087] Performing the current first programming process, the second programming process or the third programming process on the programming fuse unit to be programmed corresponding to the information of programming failure in the corresponding information to be programmed;

[0088] When the writing inspection result of the current first writing process, the second writing process or the third writing process shows that there is a programming fuse unit that fails to be written, the next first writing process, the second writing process or the third writing process is performed on the programming fuse unit that failed to be written in the current time;

[0089] When the programming inspection result of the next first programming process, the second programming process or the third programming process shows that there are still programming fuse units that fail to be programmed, the next first programming process, the second programming process or the third programming process is continued for the programming fuse units that failed to be programmed.

[0090] The first programming process may be performed once, or multiple times; the second programming process may be performed once, or multiple times; the third programming process may be performed once, or multiple times. The number of times the first programming process is performed may be the same as or different from the number of times the second programming process is performed, and the number of times the second programming process is performed may be the same as or different from the number of times the third programming process is performed.

[0091] It should be noted that "the current first programming process, the second programming process or the third programming process" can be understood as each first programming process, the second programming process or the third programming process except the last one; "the next first programming process, the second programming process or the third programming process" can be understood as the first programming process, the second programming process or the third programming process except the first one, and of course the next time needs to be within the total number of executable times. The total number of times the first programming process is executed, the total number of times the second programming process is executed, and the total number of times the third programming process is executed can be set according to actual needs.

[0092] It should be noted that, for a single programming operation, when the programming fuse unit does not reach the target state, it is called programming failure; for multiple programming processes, when the programming fuse unit does not reach the target state, it is called programming failure. Figure 6 Performing the first programming process, the second programming process or the third programming process multiple times includes:

[0093] The first programming process, the second programming process or the third programming process is performed three times respectively.

[0094] Exemplarily, the first programming process is performed three times, then the first programming process and the second programming process can be the current first programming process, and the third programming process is the last first programming process.

[0095] Execute step S602 to perform the first programming process three times; specifically:

[0096] Execute step S6021, perform a first programming process for all programming fuse units to be programmed corresponding to the information of programming failure in the corresponding information to be programmed;

[0097] Executing step S6022, when the writing inspection result of the first first writing process shows that there are programming fuse units that fail to be written, performing the second first writing process on the programming fuse units that failed to be written in the first time;

[0098] Step S6023 is executed. When the programming inspection result of the second first programming process shows that there are still programming fuse units that fail to be programmed, a new third first programming process is continued for the programming fuse units that failed to be programmed for the second time.

[0099] Accordingly, step S603 is executed to perform the second programming process three times, including: executing step S6031 to perform the first second programming process; executing step S6032 to perform the second second programming process; executing step S6033 to perform the third second programming process.

[0100] Execute step S604 to perform the third programming process three times, including: execute step S6041 to perform the first third programming process; execute step S6042 to perform the second third programming process; execute step S6043 to perform the third third programming process.

[0101] The specific details of the corresponding three second programming processes and three third programming processes can be understood by referring to the examples of the above three first programming processes, which will not be repeated here.

[0102] In this way, at least one of the first programming process, the second programming process or the third programming process is performed multiple times, which can improve the success rate of the corresponding information to be programmed.

[0103] Among them, the current first burning process, the second burning process or the third burning process does not need to burn all the programming fuse units to be burned. The first burning process, the second burning process or the third burning process after the current time only needs to burn the programming fuse units that failed to be burned in the current first burning process, the second burning process or the third burning process, which can greatly reduce the overall testing time.

[0104] Fig. 9 A schematic diagram of a flow chart of an inspection operation of a semiconductor device testing method provided by an embodiment of the present disclosure. Fig. 9 In some embodiments, performing a burn check operation includes:

[0105] After all programming fuse units to be currently programmed have completed the current programming operation, a judgment operation is performed on each programming fuse unit actually programmed in the semiconductor device;

[0106] If the address of the programming fuse unit actually burned is in the address area where all the programming fuse units currently to be burned are located, and the state attribute of the programming fuse unit actually burned is consistent with the state attribute indicated in the corresponding information to be burned, it is determined that the programming fuse unit actually burned is the programming fuse unit that has been burned successfully;

[0107] Removing the programming fuse units that have been successfully programmed from all programming fuse units that are currently to be programmed, and using the remaining programming fuse units as programming fuse units that have failed to be programmed;

[0108] If the address of the programming fuse unit actually burned is not in the address area where all the programming fuse units currently to be burned are located, it is determined that the programming fuse unit actually burned is a wrongly burned programming fuse unit.

[0109] It should be noted that the calculation method in the burn-in check operation has the following relevant definition: a programming fuse unit to be burned is an element, and each element includes address information and status information of the programming fuse unit, the address information is used to find the keyword attribute of the programming fuse unit (the mapping value of the address), and the status information is used to provide the data information stored on the programming fuse unit. For example, the element FBE includes the address information fba and status information fbs of the programming fuse unit, the address information fba represents the search keyword attribute of the programming fuse unit, and the status information fbs represents the status attribute of the programming fuse unit (including the data information stored on the programming fuse unit).

[0110] The test input set for the burn check operation has the following definitions:

[0111] The set gF composed of all programming fuse units contained in the semiconductor device includes elements FBE_1~FBE_n, represented by gF={FBE_1, FBE_2,..., FBE_n}; the set gT composed of all programming fuse units to be burned includes elements FBE_t1~FBE_ti, represented by gT={FBE_t1, FBE_t2,..., FBE_ti}; the set gB composed of the burned programming fuse units includes elements FBE_b1~FBE_bj, represented by gB={FBE_b1, FBE_b2,..., FBE_bj}; wherein n, i, j are positive integers, and i≤n, j≤n.

[0112] The calculation result set in the flash check operation has the following relevant definitions:

[0113] The set of programming fuse units gU that failed to be burned represents the set of programming fuse units that failed to be burned; the set of programming fuse units gM that were mistakenly burned represents the set of programming fuse units whose actual burning position in a burning operation is not the target burning position this time; the set of programming fuse units gN to be burned in the next step represents the set of programming fuse units that need to be burned in the next burning operation.

[0114] Exemplarily, step S901 is executed to assign the set gT consisting of all programming fuse units to be burned to the unburned programming fuse unit set gU (ie, gU=gT); that is, all programming fuse units to be burned are first regarded as belonging to the programming fuse unit set gU that failed to burn.

[0115] After executing step 901, execute step S902 to obtain any element from the programmed programming fuse unit set gB; for example, the first information element FBE_b k Programming fuse unit; obtaining an element from the programming fuse unit set gU that failed to be programmed; for example, the second information element FBE_um After executing step 902, execute step S903 to determine the first information element FBE_b k Whether it belongs to the programming fuse unit set gT to be burned (i.e., judging whether FBE_b k ∈gT? ), when the first information element FBE_b k If the first information element FBE_b belongs to the programming fuse unit set gT to be burned, step S904 is executed. k If it does not belong to the programming fuse unit set gT to be burned, execute step S921 to program the fuse unit. In the process of executing step S904, the current value of FBE_um(fbs) is XORed with FBE_bk(fbs) and then assigned to FBE_um(fbs) (i.e., FBE_u m (fbs)⊕=FBE_b k (fbs) Program fuse cells Program fuse cells.

[0116] After executing step S904, execute step S905 to determine whether FBE_u m Is the value of (fbs) zero (FBE_u m (fbs)=0?) It can be understood that when FBE_um(fbs)=0, it means that FBE_um(fbs) is the same as FBE_bk(fbs), that is, step S904 and step S905 together realize the judgment of whether FBE_um(fbs) is the same as FBE_bk(fbs). It should be noted that the second information element FBE_um(fbs) is m It is understood as any element in the programming fuse unit set gU that has not been burned. Here, the data information FBE_b of the first information element is determined. k (fbs) and the data information of the second information element FBE_u m (fbs) are the same, it should be understood as: judging the data information FBE_b of the first information element k (fbs) is the same as the data information of any element in the programming fuse unit set gU that failed to be burned.

[0117] When the data information FBE_b of the first information element k (fbs) and the data information of the second information element FBE_u m (fbs) are the same, execute step S906, and replace the second information element FBE_u m Remove from the programming fuse unit set gU that failed to be burned; when the data information FBE_b of the first information element k (fbs) and the data information of the second information element FBE_u mIf (fbs) is not the same, execute step S907. After executing step 906, continue to execute step S907. In the process of executing step S907, it is determined whether all loops are completed, that is, whether all elements in gB have executed similar FBE_b k When the polling is completed, step S908 is executed, that is, each element in the programmed programming fuse unit set gB is polled to obtain the unprogrammed programming fuse unit set gU and the erroneously programmed programming fuse unit set gM, and the programming fuse unit set gU that has not been programmed is assigned to the programming fuse unit set gN to be programmed in the next step, and the current erroneously programmed programming fuse unit set gM is assigned to the next erroneously programmed programming fuse unit set gM; when the polling is not completed, the step 902 is returned to execute, and the remaining elements in gB are executed similar to FBE_b k judgment.

[0118] That is, if the first information element FBE_b k Belongs to the programming fuse unit set gT to be burned, and the data information FBE_b of the first information element k (fbs) and the data information of the second information element FBE_u m (fbs) are the same, it is determined that the programming fuse unit actually burned is the programming fuse unit that has passed the burning; if the first information element FBE_b k Does not belong to the programming fuse unit set gT to be burned, regardless of the first information element FBE_b k Whether it belongs to the programming fuse unit set gM that is erroneously burned, it is determined that the programming fuse unit actually burned is the programming fuse unit that is erroneously burned; if the first information element FBE_b k belongs to the programming fuse unit set gT to be burned, and the data information FBE_b of the first information element k (fbs) and the data information of the second information element FBE_u m (fbs) are different, and it is determined that the programming fuse unit actually burned is the programming fuse unit that failed to be burned.

[0119] In the process of executing step S921, it is determined that the first information element FBE_b k Whether it belongs to the current mis-written programming fuse unit set gM:

[0120] When the first information element FBE_b k If it does not belong to the current mis-written programming fuse unit set gM, step S923 is executed to replace the first information element FBE_b k Add to the current mis-written programming fuse unit set gM; when the first information element FBE_b kWhen the current mis-written programming fuse unit set gM is in the set, step S922 is executed to perform a bitwise operation (bitwise OR) on the current value of FBE_mx(fbs) and FBE_bk(fbs) and then assign it to FBE_bk(fbs) (i.e., FBE_m x (fbs)|=FBE_b k (fbs)), mark FBE_bk(fbs) in gM. The third information element FBE_u m Any element in the current mis-programmed fuse unit set gM.

[0121] In some embodiments, when it is determined that the programming fuse unit actually burned is a programming fuse unit that was mistakenly burned, and / or when it is determined that the programming fuse unit actually burned is a programming fuse unit that was not burned, the semiconductor device is determined to be unqualified, or the semiconductor device needs to be further tested before determining whether the semiconductor device is qualified.

[0122] Figure 7 A schematic diagram of a first programming process of a semiconductor device testing method provided by an embodiment of the present disclosure. Figure 7 In some embodiments, the method further comprises:

[0123] If the result of any first programming check operation shows that there is a misprogramming or the result of the last first programming check operation shows that there is a programming fuse unit that fails the first programming, it is determined that the first programming process fails and the semiconductor device is unqualified;

[0124] If the result of any first programming check operation shows that there is no erroneous programming, and the result of the previous first programming check operation shows that there is a programming fuse unit that fails the first programming, the next first programming operation is performed;

[0125] If the result of each first programming check operation shows that there is no misprogramming, and the result of the last first programming check operation shows that there is no programming fuse unit that fails the first programming, it is determined that the first programming process is successful.

[0126] It should be noted that the judgment of the embodiment of the present disclosure is based on Fig. 9 The judgment is made based on the result of the inspection operation. For example, the judgment of the embodiment of the present disclosure is based on Fig. 9 Whether the erroneously written programming fuse unit set gM obtained by the checking operation is an empty set, and / or whether the programming fuse unit set gN to be written in the next step is an empty set is used as a basis for judgment.

[0127] Here, three first programming processes (including a first first programming process, a second first programming process and a third first programming process) are taken as an example for description.

[0128] Execute step S701 to perform the first programming process for the first time.

[0129] After completing step S701, proceed to step S702 to determine whether the mis-written programming fuse unit set gM is an empty set. When the erroneously written programming fuse unit set gM is not an empty set, it means that there is erroneously written information in the first information to be written. At this time, the trimming voltage corresponding to the semiconductor device will deviate from the expected value, and the semiconductor device cannot be used normally. Based on this, it can be determined that the semiconductor device is unqualified; when the erroneously written programming fuse unit set gM is an empty set, it means that there is no erroneously written information in the first information to be written, and step S703 is continued at this time.

[0130] In the process of executing step S703, it is determined whether the programming fuse unit set gN to be programmed in the next step is an empty set. When the programming fuse unit set gN to be burned in the next step is an empty set, it means that all the programming fuse units to be burned in the first burning operation have passed the burning. At this time, step S710 is executed to determine that the first burning process is burned successfully. It can be understood that in this case, the first burning process can be executed only once; when the programming fuse unit set gN to be burned in the next step is not an empty set, it means that there are programming fuse units to be burned in the first burning operation that have not passed the burning. At this time, step S704 is executed to perform the next first burning process.

[0131] During the execution of step S704, the second first programming process is performed.

[0132] After completing step S704, proceed to step S705 to determine whether the mis-written programming fuse unit set gM is an empty set. When the incorrectly written programming fuse unit set gM is not an empty set, the semiconductor device is determined to be unqualified; when the incorrectly written programming fuse unit set gM is an empty set, step S706 is continued. It should be noted that the specific situation of step S705 can be understood with reference to step 702.

[0133] In the process of executing step S706, it is determined whether the programming fuse unit set gN to be programmed in the next step is an empty set. When the next programming fuse unit set gN to be burned is an empty set, step S710 is executed to determine that the first burning process is burned successfully; when the next programming fuse unit set gN to be burned is not an empty set, step S707 is continued. It should be noted that the specific situation of step S706 can be understood with reference to step 703. During the execution of step S707, the first burning process is performed for the third time.

[0134] After completing step S707, proceed to step S708 to determine whether the mis-written programming fuse unit set gM is an empty set. When the incorrectly written programming fuse unit set gM is not an empty set, the semiconductor device is determined to be unqualified; when the incorrectly written programming fuse unit set gM is an empty set, step S709 is continued. It should be noted that the specific situation of step S708 can be understood with reference to step 702. In the process of executing step S709, it is determined whether the next programming fuse unit set gN to be written is an empty set. When the next programming fuse unit set gN to be burned is an empty set, step S710 is executed to determine that the first burning process is burned successfully; when the next programming fuse unit set gN to be burned is not an empty set, it means that there are still programming fuse units to be burned that have not passed the third burning operation. At this time, it is considered that the burning cannot pass after multiple burnings, so the semiconductor device is determined to be unqualified. In the process of executing step S710, it is determined that the first burning process is burned successfully.

[0135] In some embodiments, after determining that the first programming process is successful, the semiconductor device needs to be further tested and then combined with the results of the further testing to determine whether the semiconductor device is qualified. For example, after determining that the first programming process is successful, it is also necessary to confirm whether the second programming process and the third programming process are successful, and then determine whether the semiconductor device is qualified.

[0136] Figure 8 A schematic diagram of the second programming process and the third programming process of a semiconductor device testing method provided by an embodiment of the present disclosure. Figure 8 In some embodiments, the method further comprises:

[0137] If the result of the current second programming check operation or the third programming check operation shows that there is a programming fuse unit that fails programming, the next second programming operation or the third programming operation is performed;

[0138] If the result of the last second programming check operation or the third programming check operation shows that there is no programming fuse unit that fails to be programmed, and the result of the last second programming check operation or the third programming check operation shows that there is no erroneous programming, it is determined that the second programming process or the third programming process is successfully programmed;

[0139] If the result of the last second programming check operation shows that there is a programming fuse unit that fails the second programming, or the result of the last second programming check operation shows that there is an erroneous programming, it is determined that the second programming process fails, and the third programming process is performed;

[0140] If the result of the last third programming check operation shows that there is a programming fuse unit that fails the third programming, or the result of the last third programming check operation shows that there is an erroneous programming, it is determined that the third programming process fails and the semiconductor device is unqualified.

[0141] It should be noted that the judgment of the embodiment of the present disclosure is based on Fig. 9 The judgment is made based on the result of the inspection operation. For example, the judgment of the embodiment of the present disclosure is based on Fig. 9 Whether the erroneously written programming fuse unit set gM obtained by the checking operation is an empty set, and / or whether the programming fuse unit set gN to be written in the next step is an empty set is used as a basis for judgment.

[0142] Here, three second burning processes (including the first second burning process, the second second burning process and the third second burning process) and three third burning processes (including the first third burning process, the second third burning process and the third third burning process) are taken as examples for explanation.

[0143] Execute step S801 to perform the first second programming process.

[0144] After completing step S801, proceed to step S802 to determine whether the programming fuse unit set gN to be burned in the next step is an empty set. When the programming fuse unit set gN to be burned in the next step is not an empty set, it means that after the first second burning process, there is unburned information in the second information to be burned, and the programming fuse unit corresponding to the unburned information needs to continue burning; when the programming fuse unit set gN to be burned in the next step is an empty set, it means that there is no unburned information in the second information to be burned, and step S807 is executed directly.

[0145] During the execution of step S803, a second programming process is performed for the second time.

[0146] After completing step S803, proceed to step S804 to determine whether the programming fuse unit set gN to be burned in the next step is an empty set. When the programming fuse unit set gN to be burned in the next step is not an empty set, it means that after the second second burning process, there is still unburned information in the second information to be burned, and the programming fuse unit corresponding to the unburned information needs to continue burning; when the programming fuse unit set gN to be burned in the next step is an empty set, it means that there is no unburned information in the second information to be burned, and step S807 is executed directly.

[0147] During the execution of step S805, the second programming process is performed for the third time.

[0148] After completing step S805, proceed to step S806 to determine whether the programming fuse unit set gN to be burned in the next step is an empty set. When the programming fuse unit set gN to be burned in the next step is not an empty set, it means that after the third second burning process, there is still unburned information in the second information to be burned, and it is determined that the second burning process has failed. When the second burning process fails, a third burning process is required to determine whether the third burning process is successful or failed. For details, see the following steps S821 to S827; when the programming fuse unit set gN to be burned in the next step is an empty set, it means that there is no unburned information in the second information to be burned, and step S807 is directly executed.

[0149] After completing step S806, proceed to step S807 to determine whether the mis-written programming fuse unit set gM is an empty set. When the erroneously burned programming fuse unit set gM is not an empty set, it means that after the third second burning process, there is still erroneously burned information in the second information to be burned, and it is determined that the second burning process has failed. When the second burning process fails, a third burning process is required to determine whether the third burning process is successful or failed. For details, see the following steps S821 to S827; when the erroneously burned programming fuse unit set gM is an empty set, execute step S808.

[0150] During the execution of step S808, it is determined that the second programming process is successful.

[0151] After the third second programming process, there is still unprogrammed information in the first information to be programmed, or there is still erroneously programmed information in the first information to be programmed, and it is determined that the second programming process has failed. When the second programming process fails, the information that failed to be programmed in the second programming process needs to be replaced and the third programming process needs to be performed. Exemplarily, if the programming of the row / column repair information corresponding to the second programming process is unsuccessful, the third programming process can be performed, that is, if the first programming fuse unit used to program the row / column repair information fails, the second programming fuse unit can be replaced to program the row / column repair information.

[0152] Execute step S821 to perform the first third programming process.

[0153] After completing step S21, continue to step S822 to determine whether the programming fuse unit set gN to be burned in the next step is an empty set. When the programming fuse unit set gN to be burned in the next step is not an empty set, it means that after the first third burning process, there is unburned information in the information of the second burning process failure, and the programming fuse unit corresponding to the unburned information needs to continue burning; when the programming fuse unit set gN to be burned in the next step is an empty set, it means that there is no unburned information in the information of the second burning process failure, and step S827 is directly executed.

[0154] During the execution of step S823, the second and third programming processes are performed.

[0155] After completing step S23, continue to step S824 to determine whether the programming fuse unit set gN to be burned in the next step is an empty set. When the programming fuse unit set gN to be burned in the next step is not an empty set, it means that after the second and third burning processes, there is still unburned information in the information of the second burning process failure, and the programming fuse unit corresponding to the unburned information needs to continue burning; when the programming fuse unit set gN to be burned in the next step is an empty set, it means that there is no unburned information in the information of the second burning process failure, and step S827 is directly executed.

[0156] During the execution of step S825, the third programming process is performed for the third time.

[0157] After completing step S25, continue to step S826 to determine whether the programming fuse unit set gN to be burned in the next step is an empty set. When the programming fuse unit set gN to be burned in the next step is not an empty set, it means that after the third second burning process, there is still unburned information in the information of the second burning process failure, and it is determined that the third burning process fails. When the third burning process fails, the information for burning row / column repair and other information corresponding to the semiconductor device is still not correctly repaired, and the semiconductor device cannot be used normally. Based on this, it can be determined that the semiconductor device is unqualified; when the programming fuse unit set gN to be burned in the next step is an empty set, execute step S827. After completing step S26, continue to execute step S827 to determine whether the programming fuse unit set gM that was burned by mistake is an empty set When the erroneously burned programming fuse unit set gM is not an empty set, it means that after the third second burning process, there is still erroneous burning information in the information of the second burning process failure, and the third burning process is determined to have failed. When the third burning process fails, the information corresponding to the semiconductor device for burning row / column repair and other information is still not correctly repaired, and the semiconductor device cannot be used normally. Based on this, it can be determined that the semiconductor device is unqualified; when the erroneously burned programming fuse unit set gM is an empty set, execute step S808.

[0158] During the execution of step S808, it is determined that the third programming process is successful.

[0159] In this way, during the first burning process, the second burning process and the third burning process, early termination checks are added to the processes respectively, so as to identify the qualified semiconductor devices or determine the unqualified semiconductor devices as early as possible, skip unnecessary processes, and thus achieve the effect of reducing the overall process time.

[0160] Fig.10 A schematic diagram of a programming process of a semiconductor device testing method provided by an embodiment of the present disclosure. Fig.10 , the embodiment of the present disclosure provides another semiconductor device testing method, comprising: performing at least one programming process on information to be programmed;

[0161] The step of performing each of the at least one programming process includes:

[0162] Performing a programming operation on the programming fuse unit to be programmed corresponding to the corresponding information to be programmed;

[0163] After the programming operation, a reading operation is performed on the corresponding programming fuse unit to be programmed;

[0164] According to the reading result corresponding to the reading operation, a programming check operation is performed to check whether the read information is consistent with the corresponding information to be programmed.

[0165] Here, executing step S1001, executing a burning process includes executing step S10011, burning operation; executing step S10012, reading operation; executing step S10013, checking operation.

[0166] Execute step S10011, the programming operation is used for writing the corresponding programming fuse unit in the semiconductor device to be programmed, and write the information to be programmed into the programming fuse unit;

[0167] Execute step S10012, the reading operation is used to read the information stored in the corresponding programming fuse unit that has passed the programming;

[0168] Step S10013 is executed, and the checking operation is used to check whether the information of the corresponding programming fuse unit that has passed the programming is consistent with the written information to be programmed.

[0169] For details on the corresponding programming, reading and checking operations, please refer to Figure 5 to understand the relevant content.

[0170] In some embodiments, the information to be burned includes a first category of information to be burned and a second category of information to be burned; the second category of information to be burned is different from the information type recorded in the first category of information to be burned; the information to be burned is subjected to at least one burning process, including: performing at least one first burning process on the first category of information to be burned; performing at least one second burning process on the second category of information to be burned; if the second burning process fails, performing at least one third burning process on the second category of information to be burned whose burning failed; the burning position corresponding to the third burning process is different from the burning position corresponding to the second burning process.

[0171] In some embodiments, performing at least one first burn process, a second burn process or a third burn process includes: performing at least one of the first burn process, the second burn process or the third burn process multiple times; performing the first burn process, the second burn process or the third burn process multiple times includes: performing the current first burn process, the second burn process or the third burn process on the programming fuse unit to be burned corresponding to the information that fails to be burned in the corresponding information to be burned; when the burn check result of the current first burn process, the second burn process or the third burn process shows that there are programming fuse units that fail to be burned, performing the next first burn process, the second burn process or the third burn process on the programming fuse unit that failed to be burned; when the burn check result of the next first burn process, the second burn process or the third burn process shows that there are still programming fuse units that fail to be burned, continuing to perform the next new first burn process, the second burn process or the third burn process on the programming fuse unit that fails to be burned next time.

[0172] In some embodiments, performing the first programming process, the second programming process, or the third programming process multiple times includes: performing the first programming process, the second programming process, or the third programming process three times respectively.

[0173] In some embodiments, the programming fuse units to be programmed corresponding to the first type of information to be programmed are fixed programming fuse units; and the programming fuse units to be programmed corresponding to the second type of information to be programmed are allowed to be reallocated.

[0174] In some embodiments, the method further includes: after the first programming process is successfully programmed, executing a second programming process on the second type of information to be programmed.

[0175] In some embodiments, the method further includes: before executing the first burning process, performing a pre-programming fuse unit reading operation to determine a reference state of the programming fuse unit; using the reference state of the programming fuse unit to exclude the programming fuse units that have been burned, and using at least part of the remaining programming fuse units as programming fuse units to be burned.

[0176] In some embodiments, the method also includes: performing a post-programming fuse unit reading operation and a post-checking operation after the second programming process or the third programming process is successfully programmed; wherein the judgment standard of the programming fuse unit writing through resistance corresponding to the post-programming fuse unit reading operation is lower than the judgment standard of the programming fuse unit writing through resistance corresponding to the reading operation in the first programming process, the second programming process and the third programming process.

[0177] In some embodiments, the method further comprises:

[0178] If the result of any first programming check operation shows that there is a misprogramming or the result of the last first programming check operation shows that there is a programming fuse unit that fails the first programming, it is determined that the first programming process fails and the semiconductor device is unqualified;

[0179] If the result of any first programming check operation shows that there is no erroneous programming, and the result of the previous first programming check operation shows that there is a programming fuse unit that fails the first programming, the next first programming operation is performed;

[0180] If the result of each first programming check operation shows that there is no misprogramming, and the result of the last first programming check operation shows that there is no programming fuse unit that fails the first programming, it is determined that the first programming process is successful.

[0181] In some embodiments, the method further comprises:

[0182] If the result of the current second programming check operation or the third programming check operation shows that there is a programming fuse unit that fails programming, the next second programming operation or the third programming operation is performed;

[0183] If the result of the last second programming check operation or the third programming check operation shows that there is no programming fuse unit that fails to be programmed, and the result of the last second programming check operation or the third programming check operation shows that there is no erroneous programming, it is determined that the second programming process or the third programming process is successfully programmed;

[0184] If the result of the last second programming check operation shows that there is a programming fuse unit that fails the second programming, or the result of the last second programming check operation shows that there is an erroneous programming, it is determined that the second programming process fails, and the third programming process is performed;

[0185] If the result of the last third programming check operation shows that there is a programming fuse unit that fails the third programming, or the result of the last third programming check operation shows that there is an erroneous programming, it is determined that the third programming process fails and the semiconductor device is unqualified.

[0186] In some embodiments, performing a burn check operation includes:

[0187] After all programming fuse units to be currently programmed have completed the current programming operation, a judgment operation is performed on each programming fuse unit actually programmed in the semiconductor device;

[0188] If the address of the programming fuse unit actually burned is in the address area where all the programming fuse units currently to be burned are located, and the state attribute of the programming fuse unit actually burned is consistent with the state attribute indicated in the corresponding information to be burned, it is determined that the programming fuse unit actually burned is the programming fuse unit that has passed the burning;

[0189] Removing the programming fuse units that have been successfully programmed from all programming fuse units that are currently to be programmed, and treating the remaining programming fuse units as programming fuse units that have failed to be programmed;

[0190] If the address of the programming fuse unit actually burned is not in the address area where all the programming fuse units currently to be burned are located, it is determined that the programming fuse unit actually burned is a wrongly burned programming fuse unit. Fig.11 The fifth flowchart of a semiconductor device testing method provided by the embodiment of the present disclosure. Fig.11 The present disclosure provides another semiconductor device testing method, including:

[0191] Execute step S1102 to perform the first programming process three times on the first type of information to be programmed;

[0192] Execute step S1103, perform the second programming process three times on the second type of information to be programmed; the second type of information to be programmed is different from the first type of information to be programmed;

[0193] Execute step S1104, if the third programming process fails to program three times, perform the third programming process three times on the second type of information to be programmed that failed to program; the programming position corresponding to the third programming process is different from the programming position corresponding to the second programming process;

[0194] Performing the first programming process three times, the second programming process three times, or the third programming process three times, executing step S1102, step S1103, or step S1104 includes:

[0195] Execute step S11021, step S11031 or step S11041, perform a first first writing operation, a second writing operation or a third writing operation on all to-be-written reverse-programming fuse units corresponding to the corresponding to-be-written information, then perform a first first reading operation, a second reading operation or a third reading operation, and perform a first first writing check operation, a second writing check operation or a third writing check operation according to the reading result;

[0196] Execute step S11022, step S11032 or step S11042, perform a second first write operation, a second write operation or a third write operation on the reverse programming fuse unit that fails the first write, then perform a second first read operation, a second read operation or a third read operation, and perform a second first write check operation, a second write check operation or a third write check operation according to the read result;

[0197] Execute step S11023, step S11033 or step S11043, perform a third first write operation, a second write operation or a third write operation on the reverse programming fuse unit that fails the second write, then perform a third first read operation, a second read operation or a third read operation, and perform a third first write check operation, a second write check operation or a third write check operation based on the read result.

[0198] In some embodiments, the programming fuse units to be programmed corresponding to the first type of information to be programmed are fixed programming fuse units; and the programming fuse units to be programmed corresponding to the second type of information to be programmed are allowed to be reallocated.

[0199] In some embodiments, the method further includes: after the first programming process is successfully programmed, executing a second programming process on the second type of information to be programmed.

[0200] In some embodiments, the method further includes: before executing the first burning process, performing a pre-programming fuse unit reading operation to determine a reference state of the programming fuse unit; using the reference state of the programming fuse unit to exclude the programming fuse units that have been burned, and using at least part of the remaining programming fuse units as programming fuse units to be burned.

[0201] In some embodiments, the method also includes: performing a post-programming fuse unit reading operation and a post-checking operation after the second programming process or the third programming process is successfully programmed; wherein the judgment standard of the programming fuse unit writing through resistance corresponding to the post-programming fuse unit reading operation is lower than the judgment standard of the programming fuse unit writing through resistance corresponding to the reading operation in the first programming process, the second programming process and the third programming process.

[0202] In some embodiments, the method further comprises:

[0203] If the result of any of the first programming check operations shows that there is a misprogramming or the result of the third first programming check operation shows that there is a programming fuse unit that fails the first programming, it is determined that the first programming process fails and the semiconductor device is unqualified;

[0204] If the result of any first programming check operation shows that there is no erroneous programming, and the result of the first or second first programming check operation shows that there is a programming fuse unit that fails the first programming, the next first programming operation is performed;

[0205] If the results of the first and second first programming check operations show that there is no misprogramming, and the result of the third first programming check operation shows that there is no programming fuse unit that fails the first programming, it is determined that the first programming process is successful.

[0206] In some embodiments, the method further comprises:

[0207] If the result of the first or second second programming check operation or the third programming check operation shows that there is a programming fuse unit that fails to be programmed, the next second programming operation or the third programming operation is performed;

[0208] If the result of the third second programming check operation or the third programming check operation shows that there is no programming fuse unit that fails to be programmed, and the result of the third second programming check operation or the third programming check operation shows that there is no erroneous programming, it is determined that the second programming process or the third programming process is programmed successfully;

[0209] If the result of the third second programming check operation shows that there is a programming fuse unit that fails the second programming, or the result of the third second programming check operation shows that there is an erroneous programming, it is determined that the second programming process fails, and the third programming process is performed;

[0210] If the result of the third third programming check operation shows that there is a programming fuse unit that fails the third programming, or the result of the third third programming check operation shows that there is an erroneous programming, it is determined that the third programming process fails and the semiconductor device is unqualified.

[0211] In some embodiments, performing a burn check operation includes:

[0212] After all programming fuse units to be currently programmed have completed the current programming operation, a judgment operation is performed on each programming fuse unit actually programmed in the semiconductor device;

[0213] If the address of the programming fuse unit actually burned is in the address area where all the programming fuse units currently to be burned are located, and the state attribute of the programming fuse unit actually burned is consistent with the state attribute indicated in the corresponding information to be burned, it is determined that the programming fuse unit actually burned is the programming fuse unit that has passed the burning;

[0214] Removing the programming fuse units that have been successfully programmed from all programming fuse units that are currently to be programmed, and treating the remaining programming fuse units as programming fuse units that have failed to be programmed;

[0215] If the address of the programming fuse unit actually burned is not in the address area where all the programming fuse units currently to be burned are located, it is determined that the programming fuse unit actually burned is a programming fuse unit that was burned incorrectly. According to a second aspect of the embodiments of the present disclosure, a memory testing method is provided, including: applied to a dynamic random access memory, including: a semiconductor device testing method according to any one of the above embodiments.

[0216] In an exemplary embodiment, the memory may be any of a variety of memory devices that support high-speed operation, such as a dynamic random access memory. For example, the test may be performed in response to a test command sent by a memory controller (not shown in the present disclosure). The memory may be implemented in a module structure such as a dual-inline memory module (DIMM) or a high-bandwidth memory (HBM) device, in which the memory and the memory controller are integrated into a substrate (not shown in the present disclosure).

[0217] The above description is only a preferred embodiment of the present disclosure, and does not limit the patent scope of the present disclosure. Under the inventive concept of the present disclosure, equivalent structural transformations made using the contents of the present disclosure and the drawings, or direct / indirect application in other related technical fields are all included in the patent protection scope of the present disclosure.

Claims

1. A semiconductor device testing method, characterized in that: include: Performing at least one first programming process on the first type of information to be programmed; Performing at least one second programming process on the second type of information to be programmed; The second type of information to be written is different from the first type of information to be written; If the second programming process fails, the third programming process is performed at least once on the second type of information to be programmed that failed to be programmed; the programming position corresponding to the third programming process is different from the programming position corresponding to the second programming process.

2. The semiconductor device testing method according to claim 1, characterized in that: Performing each of the first programming process, the second programming process, or the third programming process at least once includes: Performing a corresponding first programming operation, a second programming operation or a third programming operation on a programming fuse unit to be programmed corresponding to corresponding information to be programmed; After the first writing operation, the second writing operation or the third writing operation, performing a corresponding first reading operation, a second reading operation or a third reading operation on the corresponding to-be-written programming fuse unit; According to the corresponding reading result of the first reading operation, the second reading operation or the third reading operation, a corresponding first writing check operation, a second writing check operation or a third writing check operation is performed to check whether the read information is consistent with the corresponding information to be written.

3. The semiconductor device testing method according to claim 2, characterized in that: Performing the first programming process, the second programming process or the third programming process at least once includes: Performing at least one of the first programming process, the second programming process, or the third programming process multiple times; Performing the first programming process, the second programming process or the third programming process multiple times includes: Performing the current first programming process, the second programming process or the third programming process on the programming fuse unit to be programmed corresponding to the information of programming failure in the corresponding information to be programmed; When the writing inspection result of the current first writing process, the second writing process or the third writing process shows that there is a programming fuse unit that fails to be written, the next first writing process, the second writing process or the third writing process is performed on the programming fuse unit that failed to be written in the current time; When the writing inspection result of the next first writing process, the second writing process or the third writing process shows that there are still programming fuse units that fail to be written, the next first writing process, the second writing process or the third writing process is continued for the programming fuse units that failed to be written.

4. The semiconductor device testing method according to claim 3, characterized in that: Performing the first programming process, the second programming process or the third programming process multiple times includes: The first programming process, the second programming process or the third programming process is performed three times respectively.

5. The semiconductor device testing method according to claim 1, characterized in that: The programming fuse units to be written corresponding to the first type of information to be written are fixed programming fuse units; and the programming fuse units to be written corresponding to the second type of information to be written are allowed to be allocated again.

6. The semiconductor device testing method according to claim 5, characterized in that: The method further comprises: After the first programming process is successfully programmed, the second programming process is executed on the second type of information to be programmed.

7. The semiconductor device testing method according to claim 6, characterized in that: The method further comprises: Before executing the first programming process, performing a pre-programming fuse unit reading operation to determine a reference state of the programming fuse unit; The reference state of the programming fuse cells is used to exclude the programming fuse cells that have been programmed, and at least part of the remaining programming fuse cells are used as programming fuse cells to be programmed.

8. The semiconductor device testing method according to claim 6, characterized in that: The method further comprises: After the second programming process is successfully programmed or the third programming process is successfully programmed, a post-programming fuse unit reading operation and a post-checking operation are performed; Among them, the judgment standard of the programming fuse unit burning through resistance corresponding to the post-programming fuse unit reading operation is lower than the judgment standard of the programming fuse unit burning through resistance corresponding to the reading operation in the first, second and third programming processes.

9. The semiconductor device testing method according to claim 3, characterized in that: The method further comprises: If the result of any first programming check operation shows that there is a misprogramming or the result of the last first programming check operation shows that there is a programming fuse unit that fails the first programming, it is determined that the first programming process fails and the semiconductor device is unqualified; If the result of any first programming check operation shows that there is no erroneous programming, and the result of the previous first programming check operation shows that there is a programming fuse unit that fails the first programming, the next first programming operation is performed; If the result of each first programming check operation shows that there is no erroneous programming, and the result of the last first programming check operation shows that there is no programming fuse unit that fails the first programming, it is determined that the first programming process is successful.

10. The semiconductor device testing method according to claim 3, characterized in that: The method further comprises: If the result of the current second programming check operation or the third programming check operation shows that there is a programming fuse unit that fails programming, the next second programming operation or the third programming operation is performed; If the result of the last second programming check operation or the third programming check operation shows that there is no programming fuse unit that fails to be programmed, and the result of the last second programming check operation or the third programming check operation shows that there is no erroneous programming, it is determined that the second programming process or the third programming process is successfully programmed; If the result of the last second programming check operation shows that there is a programming fuse unit that fails the second programming, or the result of the last second programming check operation shows that there is an erroneous programming, it is determined that the second programming process fails, and the third programming process is performed; If the result of the last third programming check operation shows that there is a programming fuse unit that fails the third programming, or the result of the last third programming check operation shows that there is erroneous programming, it is determined that the third programming process fails and the semiconductor device is unqualified.

11. The semiconductor device testing method according to claim 2, characterized in that: The burn-in check operation includes: After all programming fuse units to be currently programmed have completed the current programming operation, performing a judgment operation on each programming fuse unit actually programmed in the semiconductor device; If the address of the programming fuse unit actually written is in the address area where all the programming fuse units currently to be written are located, and the state attribute of the programming fuse unit actually written is consistent with the state attribute indicated in the corresponding information to be written, it is determined that the programming fuse unit actually written is the programming fuse unit that has passed the writing; Remove the programming fuse units that have been successfully programmed from all programming fuse units that are currently to be programmed, and use the remaining programming fuse units as the programming fuse units that have failed to be programmed; If the address of the actually-written programming fuse unit is not in the address region where all the currently-to-be-written programming fuse units are located, it is determined that the actually-written programming fuse unit is an erroneously-written programming fuse unit.

12. A semiconductor device testing method, characterized in that: include: Perform the first programming process three times on the first type of information to be programmed; Perform the second programming process three times on the second type of information to be programmed; The second type of information to be written is different from the first type of information to be written; If the three second programming processes fail to program, the third programming process is performed three times on the second type of information to be programmed that failed to program; the programming position corresponding to the third programming process is different from the programming position corresponding to the second programming process; Performing three first programming processes, three second programming processes, or three third programming processes includes: Performing a first first writing operation, a second writing operation or a third writing operation on all programming fuse units to be written corresponding to the corresponding information to be written, then performing a first first reading operation, a second reading operation or a third reading operation, and performing a first first writing check operation, a second writing check operation or a third writing check operation according to the reading result; Performing a second first writing operation, a second writing operation or a third writing operation on the programming fuse unit that fails the first writing, then performing a second first reading operation, a second reading operation or a third reading operation, and performing a second first writing check operation, a second writing check operation or a third writing check operation according to the reading result; A third first write operation, a second write operation or a third write operation is performed on the programming fuse unit that fails the second write, and then a third first read operation, a second read operation or a third read operation is performed, and a third first write check operation, a second write check operation or a third write check operation is performed according to the read result.

13. A memory testing method, characterized in that: Applied to dynamic random access memory, comprising: a semiconductor device testing method as claimed in any one of claims 1 to 12.

Images