Patterning method, semiconductor structure and memory

Abstract

The invention discloses a patterning method, a semiconductor structure and a memory. The patterning scheme comprises the following steps: after a mandrel structure is formed in a mask layer on one side of a layer to be etched, a part of the mandrel structure is removed to form a first trench with a smaller length and a second trench with a larger length, and a first mask pattern and a second mask pattern are formed by the first trench and the second trench, therefore, the first patterned structure and the second patterned structure which are different in length are formed. According to the patterning method, the applicability of the patterning method can be improved, and the process difficulty and cost of a fine composition process for forming patterns of different sizes are reduced, so that the patterning method provided by the invention can meet more process requirements.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a patterning method, a semiconductor structure and a memory. Background Art

[0002] Self-aligned double patterning (SADP) technology and reverse self-aligned double patterning (SARP) technology are currently the mainstream technologies used to make dense array patterns.

[0003] Through the above process, a pattern with a target pitch can be produced, which has a doubled pattern density compared to the pattern defined by the first patterning process (ie, the mandrel structure).

[0004] In addition, in some semiconductor structures, it is necessary to form fine structures of varying lengths. However, due to process limitations, the current SADP technology and SARP technology still have great difficulties to overcome. Summary of the invention

[0005] The embodiments of the present application provide a patterning method, a semiconductor structure and a memory, which can produce a first patterned structure and a second patterned structure with different lengths.

[0006] The present invention provides a patterning method, which comprises the following steps:

[0007] Forming a layer to be etched and a first mask layer located on one side of the layer to be etched, wherein a plurality of spaced mandrel structures are formed in the first mask layer, and the mandrel structure is formed with a first sub-portion and a second sub-portion located on at least one side of the first sub-portion along an extension direction of the mandrel structure;

[0008] forming a first material layer covering the plurality of mandrel structures on a side of the first mask layer away from the layer to be etched;

[0009] Removing the first material layer on the side of the first sub-portion away from the layer to be etched, and removing the first material layer located between adjacent first sub-portions and covering the side of the layer to be etched close to the first mask layer in a direction parallel to the layer to be etched, so as to form a first sidewall group at opposite side walls of the first sub-portion, wherein the first sidewall group includes two first sub-walls located on the side walls of the first sub-portion;

[0010] The first sub-portion is removed to form a first groove located between two of the first sub-walls in the first sidewall spacer group, and a second groove located between two adjacent first sidewall spacers, wherein the length of the second groove is greater than the length of the first groove;

[0011] Forming a first mask pattern and a second mask pattern respectively on a side of the layer to be etched where the first mask layer is provided through the first trench and the second trench;

[0012] The layer to be etched is etched using the first mask pattern and the second mask pattern to obtain a first patterned structure and a second patterned structure, wherein the length of the second patterned structure is greater than the length of the first patterned structure.

[0013] In one embodiment of the present application, the step of forming a layer to be etched and a first mask layer located on one side of the layer to be etched further includes:

[0014] forming a second mask layer on one side of the layer to be etched and a first anti-reflection layer located on a side of the second mask layer away from the layer to be etched;

[0015] The first mask layer is formed on a side of the first anti-reflection layer away from the second mask layer, and the first mask layer is patterned to form a plurality of spaced-apart mandrel structures.

[0016] In one embodiment of the present application, the step of forming a first material layer covering the plurality of mandrel structures on a side of the first mask layer away from the layer to be etched further includes:

[0017] forming the first material layer covering the plurality of mandrel structures on a side of the first mask layer away from the first anti-reflection layer;

[0018] A first photoresist layer is formed on a side of the first material layer away from the first mask layer, and the first sub-portion is located outside the coverage of the first photoresist layer, and the second sub-portion is located within the coverage of the first photoresist layer.

[0019] In one embodiment of the present application, the step of removing the first sub-portion further includes:

[0020] removing the first photoresist layer;

[0021] The first sub-portion is removed, and the first anti-reflection layer remains at the bottom of the first groove, and the first anti-reflection layer remains at the bottom of the second groove;

[0022] The first material layer on the side of the second sub-portion away from the layer to be etched, and the first material layer located between adjacent second sub-portions and covering the side of the layer to be etched close to the first mask layer in a direction parallel to the layer to be etched are removed to form a second side wall group at the opposite side walls of the second sub-portion, the second side wall group including two second sub-walls located on the side walls of the second sub-portion, and the second groove is also located between adjacent second side wall groups.

[0023] In one embodiment of the present application, the step of removing the first material layer on a side of the second sub-portion away from the layer to be etched, and removing the first material layer located between adjacent second sub-portions and covering a side of the layer to be etched close to the first mask layer in a direction parallel to the layer to be etched further includes:

[0024] The second sub-portion, the first anti-reflection layer at the bottom of the first trench, and the first anti-reflection layer at the bottom of the second trench are removed, and the first anti-reflection layer located on the side of the second mask layer away from the layer to be etched is left between two of the second sub-walls in the second sidewall group.

[0025] In one embodiment of the present application, the step of forming the first mask pattern and the second mask pattern respectively on the side of the layer to be etched where the first mask layer is provided through the first groove and the second groove further includes:

[0026] Removing the second mask layer aligned with the first groove to form the first mask groove in the second mask layer, and removing the second mask layer aligned with the second groove to form the second mask groove in the second mask layer, wherein the length of the second mask groove is greater than the length of the first mask groove;

[0027] The first mask pattern includes the first mask groove, and the second mask pattern includes the second mask groove.

[0028] In one embodiment of the present application, the step of etching the layer to be etched using the first mask pattern and the second mask pattern to obtain the first patterned structure and the second patterned structure further includes:

[0029] Removing at least a portion of the layer to be etched aligned with the first mask groove to form a first groove body in the layer to be etched, and removing at least a portion of the layer to be etched aligned with the second mask groove to form a second groove body in the layer to be etched, wherein the length of the second groove body is greater than the length of the first groove body;

[0030] The first patterned structure includes the first groove body, and the second patterned structure includes the second groove body.

[0031] In one embodiment of the present application, the step of forming a first material layer covering the plurality of mandrel structures on a side of the first mask layer away from the layer to be etched further includes:

[0032] A second photoresist layer is formed on a side of the first material layer away from the first mask layer, and the first sub-portion is located outside the coverage of the second photoresist layer, and the second sub-portion is located within the coverage of the second photoresist layer.

[0033] In one embodiment of the present application, the step of removing the first sub-portion includes:

[0034] The second photoresist layer is removed to form a third sidewall spacer group at opposite sidewalls of the second sub-portion, wherein the third sidewall spacer group includes two third sub-walls located on the sidewalls of the second sub-portion, and the second groove is formed between two adjacent third sidewall spacers, and the first material layer is further formed with a spacer portion located at the bottom of the second groove and between adjacent third sidewall spacers;

[0035] The first sub-portion is removed to form the first groove between two of the first sub-walls in the first spacer group, and the second groove is also located between two adjacent first spacer groups.

[0036] In one embodiment of the present application, the step of forming the first mask pattern and the second mask pattern respectively on the side of the layer to be etched where the first mask layer is provided through the first groove and the second groove further includes:

[0037] Forming a first mask sidewall in the first trench and a second mask sidewall in the second trench, and between adjacent third sidewall groups, the second mask sidewall covers a side of the spacer portion away from the layer to be etched;

[0038] removing the first material layer except the spacer portion;

[0039] The first mask pattern includes the first mask sidewall spacer, and the second mask pattern includes the second mask sidewall spacer.

[0040] In one embodiment of the present application, the step of etching the layer to be etched using the first mask pattern and the second mask pattern to obtain the first patterned structure and the second patterned structure further includes:

[0041] Removing the layer to be etched that is not covered by the first mask sidewall, and removing the layer to be etched that is not covered by the second mask sidewall, to form a first routing line and a second routing line, respectively, wherein the length of the second routing line is greater than the length of the first routing line;

[0042] The first patterned structure includes the first routing line, and the second patterned structure includes the second routing line.

[0043] In one embodiment of the present application, in the step of forming a first material layer covering the plurality of mandrel structures on a side of the first mask layer away from the layer to be etched:

[0044] The second subsection is connected to the first subsection along the extension direction of the mandrel structure, and the second subsection is connected to one side of the first subsection, or the second subsection is connected to two opposite sides of the first subsection.

[0045] In an embodiment of the present application, the material of the first mask layer includes an oxide material or a nitride material, and the material of the first material layer includes an oxide material or a nitride material.

[0046] According to the above-mentioned purpose of the present application, an embodiment of the present application also provides a semiconductor structure, in which a first groove body and a second groove body are arranged, the length of the second groove body is greater than the length of the first groove body, and the first groove body and the second groove body are formed by the first patterned structure and the second patterned structure obtained by the patterning method.

[0047] According to the above-mentioned purpose of the present application, an embodiment of the present application also provides a semiconductor structure, in which a first routing line and a second routing line are arranged, the length of the second routing line is greater than the length of the first routing line, and the first routing line and the second routing line are formed by the first patterned structure and the second patterned structure obtained by the patterning method.

[0048] According to the above-mentioned purpose of the present application, an embodiment of the present application further provides a memory, which includes the semiconductor structure.

[0049] The present application provides a patterning method, a semiconductor structure and a memory. After forming a first material layer, a first groove with a smaller length and a second groove with a larger length are formed by removing part of the core shaft structure, and a first mask pattern and a second mask pattern can be formed by the first groove and the second groove to form a first patterned structure and a second patterned structure with different lengths. This can improve the applicability of the patterning method and reduce the process difficulty and cost of the fine composition process for forming patterns of different sizes, so that the patterning method provided by the present application can meet more process requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0051] Figures 1 to 7 A schematic diagram of a process structure of a patterning method provided in some embodiments;

[0052] Figure 8 A flow chart of a patterning method provided for some embodiments of the present application;

[0053] Fig. 9 , Fig.11 , Fig.13 , Fig.15 , Fig.17 , Fig.19 , Fig.21 , Fig.23 , Fig.25 , Fig. 27 as well as Fig.29 Some embodiments of the present application provide corresponding Figure 8 A plurality of top views of a process of the patterning method shown;

[0054] Fig.10 , Fig.12 , Fig.14 , Fig.16 , Fig.18 , Fig. 20 , Fig. 22 , Fig.24 , Fig.26 , Fig.28 as well as Fig.30 For some embodiments of the present application, Figure 8 A plurality of front views of a process of the patterning method shown;

[0055] Fig.31 , Fig.33 , Fig.35 , Fig.37 , Fig.39 , Fig.41 , Fig.43 as well as Fig.45 Some embodiments of the present application provide corresponding Figure 8 A plurality of top views of another process of the patterning method shown;

[0056] Fig.32 , Fig.34 , Fig.36 , Fig.38 , Fig.40 , Fig.42 , Fig.44 as well as Fig.46For some embodiments of the present application, Figure 8 A plurality of front views of another process of the patterning method shown;

[0057] Fig.47 A structural schematic diagram of a first patterned structure and a second patterned structure provided for some embodiments of the present application;

[0058] Fig.48 Another structural schematic diagram of a first patterned structure and a second patterned structure provided for some embodiments of the present application;

[0059] Fig.49 A structural schematic diagram of a storage system provided for some embodiments of the present application. DETAILED DESCRIPTION

[0060] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0061] The disclosure below provides many different embodiments or examples to realize the different structures of the present application. In order to simplify the disclosure of the present application, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the various specific processes and material examples provided by the present application, but those of ordinary skill in the art can appreciate the application of other processes and / or the use of other materials.

[0062] The SADP manufacturing process is as follows: after the mandrel structure is manufactured by the first patterning, spacers are then formed on both sides of the mandrel structure, and the mandrel structure is subsequently removed and the spacers are left as a mask to etch the underlying material layer not covered by the spacers; or, after the mandrel structure is manufactured by the first patterning, spacers are then formed on both sides of the mandrel structure, and another material layer is formed to fill the remaining gap between the mandrel structures, and the gap formed by removing the spacers is subsequently used as an etching channel to etch the underlying material layer exposed from the gap. This process is the SARP manufacturing process.

[0063] Please combine Figures 1 to 7 , a patterning method provided in some embodiments of the present application, and specifically comprising the following steps:

[0064] A substrate layer 1, a target layer 2, a transfer layer 3, a first mask layer 4, an anti-reflection layer 5 and a second mask layer 6 are sequentially formed. Figure 1 shown.

[0065] The first mask layer 4 and the transfer layer 3 are patterned according to the pattern of the second mask layer 6 to form a transfer layer pattern and the second mask layer 6 and the anti-reflection layer 5 are removed. Figure 2 shown.

[0066] The remaining transfer layer pattern is trimmed and the first mask layer 4 is removed to form a pattern transfer pattern, i.e., a mandrel 7, as shown in FIG. Figure 3 shown.

[0067] Then, a barrier material layer 8 covering the plurality of mandrels 7 is formed on the target layer 2, such as Figure 4 shown.

[0068] Next, the wall material layer 8 is etched to form sidewalls 9 on both sides of the mandrel 7. Figure 5 shown.

[0069] The mandrel 7 is removed, thereby forming a plurality of spaced side walls 9, and grooves are formed between adjacent side walls 9, such as Figure 6 shown.

[0070] Finally, the target layer 2 and the substrate layer 1 are etched using the plurality of sidewalls 9 as masks to form corresponding patterns, such as Figure 7 As shown above, it is a process method for forming a small-sized, high-precision periodic pattern. However, when the patterns obtained by the process method have the same size, for example, the same length, it cannot meet the preparation of lines or grooves of different lengths.

[0071] The present invention provides a patterning method, which comprises the following steps:

[0072] A layer to be etched and a first mask layer located on one side of the layer to be etched are formed, wherein a plurality of spaced mandrel structures are formed in the first mask layer, wherein the mandrel structure is formed with a first sub-portion and a second sub-portion located on at least one side of the first sub-portion along the extension direction of the mandrel structure.

[0073] A first material layer covering a plurality of mandrel structures is formed on a side of the first mask layer away from the layer to be etched.

[0074] The first material layer on the side of the first sub-portion away from the layer to be etched, and the first material layer located between adjacent first sub-portions and covering the side of the layer to be etched close to the first mask layer in a direction parallel to the layer to be etched are removed to form a first side wall group at the opposite side walls of the first sub-portion, the first side wall group including two first sub-walls located on the side walls of the first sub-portion.

[0075] The first sub-portion is removed to form a first trench between two first sub-walls in the first spacer group and a second trench between two adjacent first spacer groups, wherein the length of the second trench is greater than that of the first trench.

[0076] A first mask pattern and a second mask pattern are respectively formed on a side of the layer to be etched where the first mask layer is provided through the first trench and the second trench.

[0077] The layer to be etched is etched using the first mask pattern and the second mask pattern to obtain a first patterned structure and a second patterned structure, wherein the length of the second patterned structure is greater than the length of the first patterned structure.

[0078] Among them, the embodiment of the present application forms a first groove with a smaller length and a second groove with a larger length by removing part of the core shaft structure after forming the first material layer, and can form a first mask pattern and a second mask pattern with the first groove and the second groove, so as to form a first patterned structure and a second patterned structure with different lengths; thereby, the applicability of the patterning method can be improved, and the process difficulty and cost of the fine composition process of forming patterns of different sizes can be reduced, so that the patterning method provided by the present application can meet more process requirements.

[0079] For details, please refer to Figure 8 , Figures 9 to 30 In one embodiment of the present application, the patterning method comprises the following steps:

[0080] S10, forming a layer to be etched 10 and a first mask layer 20 located on one side of the layer to be etched 10, wherein a plurality of spaced core structures 21 are formed in the first mask layer 20, and the core structure 21 is formed with a first sub-portion 211 and a second sub-portion 212 located on at least one side of the first sub-portion 211 along the extension direction of the core structure 21.

[0081] In step S10 , firstly, a second mask layer 40 and a first mask layer 20 are formed on one side of the layer to be etched 10 , wherein the second mask layer 40 is located between the layer to be etched 10 and the first mask layer 20 .

[0082] In some embodiments, step S10 further includes forming an auxiliary mask layer 53 between the layer to be etched 10 and the second mask layer 40, forming a first anti-reflection layer 51 between the second mask layer 40 and the first mask layer 20, and forming a second anti-reflection layer 52 on a side of the first mask layer 20 away from the second mask layer 40. Fig. 9 and Fig.10 When the stacked structure is subsequently etched, the first anti-reflection layer 51 and the second anti-reflection layer 52 can improve the standing wave effect and the concave-notch effect of the photoresist, and the auxiliary mask layer 53 can improve the film morphology during the etching of the layer 10 to be etched.

[0083] In some embodiments, the material of the layer to be etched 10 may include a metal material, a semiconductor material, or other etchable materials; the materials of the first mask layer 20, the second mask layer 40, and the auxiliary mask layer 53 may each independently include an oxide material or a nitride material, such as plasma enhanced oxide (PEOX), thermal oxide, chemical vapor deposition (CVD) oxide, undoped silicate glass (USG) or high-density plasma (HDP) oxide, or silicon oxynitride (SiON), silicon nitride (SiN), silicon boron nitride (SiBN) or boron nitride (BN); the first anti-reflective layer 51 and the second anti-reflective layer 52 may be composed of a bottom anti-reflective coating (BARC) film.

[0084] Then, a third photoresist layer 63 is formed on a side of the second anti-reflection layer 52 away from the first mask layer 20, and a preset pattern is formed in the third photoresist layer 63, for example, a plurality of photoresist sidewalls 631 are arranged at intervals, such as Fig.11 and Fig.12 shown.

[0085] Next, the second anti-reflection layer 52 and the first mask layer 20 are patterned by the third photoresist layer 63 to etch away the second anti-reflection layer 52 and the first mask layer 20 that are not covered by the third photoresist layer 63; and then a plurality of mandrel structures 21 arranged at intervals can be formed in the first mask layer 20. It is understandable that the side of each mandrel structure 21 away from the first anti-reflection layer 51 is covered with a portion of the second anti-reflection layer 52, such as Fig.13 and Fig.14 shown.

[0086] It should be noted that the plurality of mandrel structures 21 include a first sub-portion 211 and a second sub-portion 212 connected to at least one side of the mandrel structure 21 along the extension direction of the mandrel structure 21 , and the extension direction of the mandrel structure 21 is direction X.

[0087] S20 , forming a first material layer 30 covering a plurality of mandrel structures 21 on a side of the first mask layer 20 away from the layer to be etched 10 .

[0088] In step S20, a first material layer 30 is formed on a side of the second anti-reflection layer 52 away from the first anti-reflection layer 51, and the first material layer 30 covers the surface of the second anti-reflection layer 52 away from the first anti-reflection layer 51, the sidewalls of the plurality of mandrel structures 21, and between adjacent mandrel structures 21, such as Fig.15 and Fig.16 shown.

[0089] In some embodiments, the material of the first material layer 30 includes an oxide material or a nitride material; and the material of the first material layer 30 may be different from the material of the first mask layer 20 and the second mask layer 40. For example, when the material of the first mask layer 20 and the second mask layer 40 is an oxide material, the material of the first material layer 30 is a nitride material; when the material of the first mask layer 20 and the second mask layer 40 is a nitride material, the material of the first material layer 30 is an oxide material.

[0090] Then, a first photoresist layer 61 is formed on a side of the first material layer 30 away from the second anti-reflection layer 52, and a preset pattern is formed in the first photoresist layer 61 to cover part of the underlying film layer. Specifically, the first sub-portion 211 is located outside the coverage of the first photoresist layer 61, and the second sub-portion 212 and other parts of the first mask layer 20 are located within the coverage of the first photoresist layer 61. Fig.14 , Fig.17 and Fig.18 shown.

[0091] S30, removing the first material layer 30 on the side of the first sub-portion 211 away from the layer to be etched 10, and removing the first material layer 30 located between adjacent first sub-portions 211 and covering the side of the layer to be etched 10 close to the first mask layer 20 in a direction parallel to the layer to be etched 10, so as to form a first side wall group 31 at the opposite side walls of the first sub-portion 211, the first side wall group 31 including two first sub-walls 311 located on the side walls of the first sub-portion 211.

[0092] In step S30, the first material layer 30 is etched by an anisotropic etching process, that is, the first material layer 30 extending and covering the layer to be etched 10 in a direction parallel to the layer to be etched and outside the coverage of the first photoresist layer 61 is removed, and the direction parallel to the layer to be etched 10 is the direction Y. Specifically, the first material layer 30 on the side of the first sub-portion 211 away from the layer to be etched 10 is removed, and the first material layer 30 located between adjacent first sub-portions 211 and covering the side of the layer to be etched 10 close to the first mask layer 20 in a direction parallel to the layer to be etched 10 is removed, and then a first sidewall group 31 can be formed at the opposite side walls of the first sub-portion 211, and the first sidewall group 31 includes two first sub-walls 311 located on the side walls of the first sub-portion 211, as shown in FIG. Fig.19 and Fig. 20 shown.

[0093] S40, removing the first sub-portion 211 to form a first trench 310 located between two first sub-walls 311 in the first spacer set 31 and a second trench 320 located between two adjacent first spacer sets 31, wherein the length of the second trench 320 is greater than that of the first trench 310.

[0094] In step S40, the first photoresist layer 61 is removed first, and then the first sub-portion 211 is removed. Fig.21 and Fig. 22 shown.

[0095] Next, the remaining first material layer 30 is anisotropically etched, that is, the first material layer 30 extending and covering the layer to be etched 10 in a direction parallel to the etched layer 10 is removed. Specifically, the first material layer 30 on the side of the second sub-portion 212 away from the layer to be etched 10 is removed, and the first material layer 30 located between adjacent second sub-portions 212 and covering the side of the layer to be etched 10 close to the first mask layer 20 in a direction parallel to the layer to be etched 10 is removed, so that a second sidewall group 32 can be formed at the opposite side walls of the second sub-portion 212, and the second sidewall group 32 includes two second sub-walls 321 located on the side walls of the second sub-portion 212, as shown in FIG. Fig.23 and Fig.24 .

[0096] Then, the second sub-portion 212 is removed to form a second trench 320 between adjacent second sidewall groups 32, and a first trench 310 is formed between two first sub-walls 311 in the first sidewall group 31; and a first anti-reflection layer 51 located on a side of the first mask layer 20 away from the layer to be etched 10 is retained between the two second sub-walls 321 in the second sidewall group 32, as shown in FIG. Fig.24 , Fig.25 and Fig.26 shown.

[0097] Among them, the length of the second groove 320 is greater than the length of the first groove 310; in some embodiments, the length of the second groove 320 can be equal to the length of the core shaft structure 21 along its extension direction, and the length of the first groove 310 can be equal to the length of the first sub-portion 211 along the extension direction of the core shaft structure 21.

[0098] It should be noted that the first groove 310 is formed between two first sub-walls 311 in the first sidewall set 31 and Fig. 22 and Fig.24 In the corresponding structure, the first anti-reflection layer 51 is still retained at the bottom of the first trench 310; and the second trench 320 is formed between adjacent second sidewall groups 32, and Fig. 22 and Fig.24 In the corresponding structure, the first anti-reflection layer 51 is also retained at the bottom of the second groove 320 .

[0099] Then in Fig.24 The structure shown to Fig.26In the steps of the structure shown, it is necessary to remove the second sub-portion 212, remove the first anti-reflection layer 51 at the bottom of the first groove 310, and remove the first anti-reflection layer 51 at the bottom of the second groove 320; and the first anti-reflection layer 51 located on the side of the first mask layer 20 away from the layer to be etched 10 is retained between the two second sub-walls 321 in the second sidewall group 32, and the first anti-reflection layer 51 is arranged at intervals between the first sub-wall 311, the second sub-wall 321 and the second mask layer 40, and the area except the first groove 310 and the second groove 320 is covered with the first anti-reflection layer 51, that is, Fig.26 In the structure shown, the surface of the second mask layer 40 away from the layer to be etched 10 is exposed only at the first trench 310 and the second trench 320 .

[0100] S50 , forming a first mask pattern 41 and a second mask pattern 42 respectively on the side of the to-be-etched layer 10 where the first mask layer 20 is provided through the first trench 310 and the second trench 320 .

[0101] In step S50, the second mask layer 40 is etched using the first sidewall group 31, the second sidewall group 32 and the first anti-reflection layer 51 as masks to remove the second mask layer 40 corresponding to the first groove 310 and the second mask layer 40 corresponding to the second groove 320; and then a first mask pattern 41 and a second mask pattern 42 are formed in the second mask layer 40, respectively. Fig. 27 and Fig.28 shown.

[0102] The first mask pattern 41 may be a first mask groove 411 formed in the second mask layer 40 , and the second mask pattern 42 may be a second mask groove 421 formed in the second mask layer 40 , wherein the length of the second mask groove 421 is greater than that of the first mask groove 411 .

[0103] S60 , etching the to-be-etched layer 10 by using the first mask pattern 41 and the second mask pattern 42 to obtain a first patterned structure 11 and a second patterned structure 12 , wherein the length of the second patterned structure 12 is greater than the length of the first patterned structure 11 .

[0104] In step S60 , the to-be-etched layer 10 and the auxiliary mask layer 53 are etched using the first mask pattern 41 and the second mask pattern 42 to form a first patterned structure 11 and a second patterned structure 12 in the to-be-etched layer 10 , respectively.

[0105] The first patterned structure 11 may be a first groove 111 formed in the layer to be etched 10, and the second patterned structure 12 may be a second groove 121 formed in the layer to be etched 10. Fig.29 and Fig.30 shown.

[0106] It should be noted that since the first groove body 111 is formed corresponding to the first mask pattern 41 , that is, corresponding to the first groove 310 , and the second groove body 121 is formed corresponding to the second mask pattern 42 , that is, corresponding to the second groove 320 , the length of the second groove body 121 is greater than the length of the first groove body 111 .

[0107] In some embodiments, the length of the second slot body 121 may be equal to the length of the mandrel structure 21 along its extension direction, and the length of the first slot body 111 may be equal to the length of the first sub-portion 211 along the extension direction of the mandrel structure 21 .

[0108] In some embodiments of the present application, the first photoresist layer 61 can be set to partially block the mandrel structure 21, and a first groove 310 with a smaller length and a second groove 320 with a larger length can be formed by removing part of the mandrel structure 21. The first groove 310 and the second groove 320 can be used to form a first mask pattern 41 and a second mask pattern 42 to form a first patterned structure 11 and a second patterned structure 12 with different lengths. This can improve the applicability of the patterning method, reduce the process difficulty and cost of the fine composition process for forming patterns of different sizes, and enable the patterning method provided in the present application to meet more process requirements.

[0109] Also, please refer to Figure 8 , Figures 31 to 46 In another embodiment of the present application, the patterning method comprises the following steps:

[0110] S10, forming a layer to be etched 10 and a first mask layer 20 located on one side of the layer to be etched 10, wherein a plurality of spaced core structures 21 are formed in the first mask layer 20, and the core structure 21 is formed with a first sub-portion 211 and a second sub-portion 212 located on at least one side of the first sub-portion 211 along the extension direction of the core structure 21.

[0111] In step S10, a layer to be etched 10 is first formed, and then a first mask layer 20 is formed on one side of the layer to be etched 10. Fig.31 and Fig.32 shown.

[0112] In some embodiments, the material of the layer to be etched 10 may include a metal material, a semiconductor material, or other etchable materials; the material of the first mask layer 20 may independently include an oxide material or a nitride material, such as plasma enhanced oxide (PEOX), thermal oxide, chemical vapor deposition (CVD) oxide, undoped silicate glass (USG) or high-density plasma (HDP) oxide, or silicon oxynitride (SiON), silicon nitride (SiN), silicon boron nitride (SiBN) or boron nitride (BN).

[0113] Next, the first mask layer 20 is etched to form a plurality of spaced-apart mandrel structures 21, wherein the mandrel structure 21 includes a first sub-portion 211 and a second sub-portion 212 located on at least one side of the first sub-portion 211 along the extension direction of the mandrel structure 21, and the extension direction of the mandrel structure 21 is a direction M, as shown in FIG. Fig.33 and Fig.34 shown.

[0114] S20 , forming a first material layer 30 covering a plurality of mandrel structures 21 on a side of the first mask layer 20 away from the layer to be etched 10 .

[0115] In step S20, a first material layer 30 is formed on a side of the first mask layer 20 away from the layer to be etched 10, and the first material layer 30 covers a plurality of mandrel structures 21, specifically, the top surface and the sidewall of the mandrel structure 21, and the area between adjacent mandrel structures 21, such as Fig.35 and Fig.36 shown.

[0116] In some embodiments, the material of the first material layer 30 includes an oxide material or a nitride material; and the material of the first material layer 30 may be different from the material of the first mask layer 20. For example, when the material of the first mask layer 20 is an oxide material, the material of the first material layer 30 is a nitride material; when the material of the first mask layer 20 is a nitride material, the material of the first material layer 30 is an oxide material.

[0117] A second photoresist layer 62 is formed on a side of the first material layer 30 away from the first mask layer 20, wherein the first sub-portion 211 is located outside the coverage of the second photoresist layer 62, and the second sub-portion 212 and other parts of the first material layer 30 are located within the coverage of the second photoresist layer 62. Fig.37 and Fig.38 shown.

[0118] S30, removing the first material layer 30 on the side of the first sub-portion 211 away from the layer to be etched 10, and removing the first material layer 30 located between adjacent first sub-portions 211 and covering the side of the layer to be etched 10 close to the first mask layer 20 in a direction parallel to the layer to be etched 10, so as to form a first side wall group 31 at the opposite side walls of the first sub-portion 211, the first side wall group 31 including two first sub-walls 311 located on the side walls of the first sub-portion 211.

[0119] In step S30, the first material layer 30 is etched using an anisotropic etching process to remove the first material layer 30 on the side of the first sub-portion 211 away from the layer to be etched 10, and remove the first material layer 30 located between adjacent first sub-portions 211 and covering the side of the layer to be etched 10 close to the first mask layer 20 in a direction parallel to the layer to be etched 10, and the direction parallel to the layer to be etched 10 is direction N, and a first side wall group 31 is formed at the opposite side walls of the first sub-portion 211, and the first side wall group 31 includes two first sub-walls 311 located on the side walls of the first sub-portion 211.

[0120] Then, the second photoresist layer 62 is removed.

[0121] S40, removing the first sub-portion 211 to form a first trench 310 located between two first sub-walls 311 in the first spacer set 31 and a second trench 320 located between two adjacent first spacer sets 31, wherein the length of the second trench 320 is greater than that of the first trench 310.

[0122] In step S40, the first sub-portion 211 is removed to form a first trench 310 between two first sub-walls 311 in the first spacer set 31, and a second trench 320 is formed between adjacent first spacer sets 31. Fig.39 and Fig.40 shown.

[0123] It can be understood that the length of the second groove 320 is greater than the length of the first groove 310. In some embodiments, the length of the second groove 320 can be equal to the length of the core shaft structure 21 along its extension direction, and the length of the first groove 310 can be equal to the length of the first sub-portion 211 along the extension direction of the core shaft structure 21.

[0124] It should be noted that the first material layer 30 covers the second sub-portion 212 and forms a third side wall group 33 at the opposite side walls of the second sub-portion 212, the third side wall group 33 includes two third sub-walls 331 located at the side walls of the second sub-portion 212, and the second groove 320 is also formed between adjacent third side wall groups 33; in addition, the first material layer 30 also forms a spacer portion 34 in the second groove 320 located between two adjacent third side wall groups 33.

[0125] S50 , forming a first mask pattern 41 and a second mask pattern 42 respectively on the side of the to-be-etched layer 10 where the first mask layer 20 is provided through the first trench 310 and the second trench 320 .

[0126] In step S50, a first mask pattern 41 and a second mask pattern 42 are formed in the first trench 310 and the second trench 320, respectively. Specifically, the first mask pattern 41 may be a first mask sidewall 412 formed in the first trench 310, and the second mask pattern 42 may be a second mask sidewall 422 formed in the second trench 320, and the length of the second mask sidewall 422 is greater than the length of the first mask sidewall 412. Fig.41 and Fig.42 .

[0127] It should be noted that, in the second trench 320 , the second mask sidewalls 422 between adjacent first sidewall groups 31 cover the to-be-etched layer 10 , and the second mask sidewalls 422 between adjacent third sidewall groups 33 cover the spacer portion 34 .

[0128] Then, the first material layer 30 except the spacer portion 34 is removed to form a first mask sidewall 412 and a second mask sidewall 422 spaced apart from each other on the layer to be etched 10, as shown in FIG. Fig.43 and Fig.44 shown.

[0129] S60 , etching the to-be-etched layer 10 by using the first mask pattern 41 and the second mask pattern 42 to obtain a first patterned structure 11 and a second patterned structure 12 , wherein the length of the second patterned structure 12 is greater than the length of the first patterned structure 11 .

[0130] In step S60, the to-be-etched layer 10 not covered by the first mask sidewall 412 and the second mask sidewall 422 is removed to form a first patterned structure 11 and a second patterned structure 12, respectively, wherein the first patterned structure 11 is a first wiring 112 formed corresponding to the first mask sidewall 412, and the second patterned structure 12 is a second wiring 122 formed corresponding to the second mask sidewall 422. Fig.45 and Fig.46 shown.

[0131] It should be noted that the length of the second routing 122 is greater than the length of the first routing 112; since the first routing 112 is formed corresponding to the first mask side wall 412, that is, the first routing 112 is formed corresponding to the first groove 310; the second routing 122 is formed corresponding to the second mask side wall 422, that is, the second routing 122 is formed corresponding to the second groove 320; and further in some embodiments, the length of the second routing 122 can be equal to the length of the core shaft structure 21 along its extension direction, and the length of the first routing 112 can be equal to the length of the first sub-portion 211 along the extension direction of the core shaft structure 21.

[0132] In some embodiments of the present application, the second photoresist layer 62 can be set to partially block the mandrel structure 21, and a first groove 310 with a smaller length and a second groove 320 with a larger length can be formed by removing part of the mandrel structure 21. The first groove 310 and the second groove 320 can be used to form a first mask pattern 41 and a second mask pattern 42 to form a first patterned structure 11 and a second patterned structure 12 with different lengths. This can improve the applicability of the patterning method, reduce the process difficulty and cost of the fine composition process for forming patterns of different sizes, and enable the patterning method provided in the present application to meet more process requirements.

[0133] It should be noted that the embodiments of the present application can produce patterned structures of different lengths, such as slots or routings, through the patterning scheme described in the above embodiments, and among the slots or routings of different lengths, they can be multiple slots or routings with one end aligned and the other end not aligned, or multiple slots or routings with both ends not aligned. When the second sub-section 212 is connected to one side of the first sub-section 211 along the extension direction of the core shaft structure 21, the above patterning method can form multiple slots or routings with one end aligned and the other end not aligned; when the second sub-section 212 is connected to the opposite sides of the first sub-section 211 along the extension direction of the core shaft structure 21, the above patterning method can form multiple slots or routings with both ends not aligned.

[0134] In addition, an embodiment of the present application further provides a semiconductor structure, which is manufactured using the patterning method described in the above embodiment.

[0135] In some embodiments, please refer to Fig.47 The semiconductor structure is provided with a first groove body 111 and a second groove body 121, and the length of the second groove body 121 is greater than the length of the first groove body 111. The first groove body 111 and the second groove body 121 can be formed by respectively using the patterning method described in the above embodiment to obtain the first patterned structure 11 and the second patterned structure 12.

[0136] In some embodiments, please refer to Fig.48 The semiconductor structure is provided with a first wiring 112 and a second wiring 122, and the length of the second wiring 122 is greater than the length of the first wiring 112. The first wiring 112 and the second wiring 122 can be formed by respectively using the patterning method described in the above embodiment to obtain the first patterned structure 11 and the second patterned structure 12.

[0137] Furthermore, an embodiment of the present application also provides a memory and a storage system, wherein the memory includes the semiconductor structure described in the above embodiment.

[0138] The storage system includes the semiconductor structure, please refer to Fig.49 The storage system includes a memory 72 and a controller 71. The controller 71 is coupled to the memory 72 and is used to control the memory 72 to store data. The memory 72 is a memory manufactured by the memory manufacturing method described in the above embodiment or a memory described in the above embodiment.

[0139] Specifically, the controller 71 may control the memory 72 through the channel CH, and the memory 72 may perform an operation based on the control of the controller 71 in response to a request from the host 80. The memory 72 may receive a command CMD and an address ADDR from the controller 71 through the channel CH and access an area selected from the memory array in response to the address. In other words, the memory 72 may perform an internal operation corresponding to the command on the area selected by the address.

[0140] In some embodiments, the storage system may be implemented as a storage device including but not limited to a universal flash storage (UFS) device, a solid state drive (SSD), a multimedia card in the form of MMC, eMMC, RS-MMC and micro MMC, a secure digital card in the form of SD, mini SD and micro SD, a Personal Computer Memory Card International Association (PCMCIA) card type storage device, a peripheral component interconnect (PCI) type storage device, a high-speed PCI (PCI-E) type storage device, a compact flash (CF) card, a smart media card or a memory stick, etc.

[0141] Specifically, the above storage system can be used in terminal products such as computers, televisions, set-top boxes, and vehicles.

[0142] Furthermore, some embodiments of the present application also provide an electronic device, which includes the above-mentioned storage system provided in the embodiments of the present application. Specifically, the electronic device may include but is not limited to mobile phones, desktop computers, tablet computers, laptops, servers, vehicle-mounted devices, wearable devices, mobile power supplies, and any other device that can store data.

[0143] Some embodiments of the present application provide an electronic device, which has the same beneficial effects as the above-mentioned storage system due to the provision of the storage system provided by some embodiments of the present application.

[0144] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0145] The above is a detailed introduction to a patterning method, a semiconductor structure and a memory provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A patterning method, characterized in that: The following steps are involved: Forming a layer to be etched and a first mask layer located on one side of the layer to be etched, wherein a plurality of spaced mandrel structures are formed in the first mask layer, and the mandrel structure is formed with a first sub-portion and a second sub-portion located on at least one side of the first sub-portion along an extension direction of the mandrel structure; forming a first material layer covering the plurality of mandrel structures on a side of the first mask layer away from the layer to be etched; Removing the first material layer on the side of the first sub-portion away from the layer to be etched, and removing the first material layer located between adjacent first sub-portions and covering the side of the layer to be etched close to the first mask layer in a direction parallel to the layer to be etched, so as to form a first sidewall group at opposite side walls of the first sub-portion, wherein the first sidewall group includes two first sub-walls located on the side walls of the first sub-portion; The first sub-portion is removed to form a first groove located between two of the first sub-walls in the first sidewall spacer group, and a second groove located between two adjacent first sidewall spacers, wherein the length of the second groove is greater than the length of the first groove; Forming a first mask pattern and a second mask pattern respectively on a side of the layer to be etched where the first mask layer is provided through the first trench and the second trench; The layer to be etched is etched using the first mask pattern and the second mask pattern to obtain a first patterned structure and a second patterned structure, wherein the length of the second patterned structure is greater than the length of the first patterned structure.

2. The patterning method according to claim 1, characterized in that: The step of forming a layer to be etched and a first mask layer located on one side of the layer to be etched also includes: forming a second mask layer on one side of the layer to be etched and a first anti-reflection layer located on a side of the second mask layer away from the layer to be etched; The first mask layer is formed on a side of the first anti-reflection layer away from the second mask layer, and the first mask layer is patterned to form a plurality of spaced-apart mandrel structures.

3. The patterning method according to claim 2, characterized in that: The step of forming a first material layer covering the plurality of mandrel structures on a side of the first mask layer away from the layer to be etched further comprises: forming the first material layer covering the plurality of mandrel structures on a side of the first mask layer away from the first anti-reflection layer; A first photoresist layer is formed on a side of the first material layer away from the first mask layer, and the first sub-portion is located outside the coverage of the first photoresist layer, and the second sub-portion is located within the coverage of the first photoresist layer.

4. The patterning method according to claim 3, characterized in that: The step of removing the first sub-portion further comprises: removing the first photoresist layer; The first sub-portion is removed, and the first anti-reflection layer remains at the bottom of the first groove, and the first anti-reflection layer remains at the bottom of the second groove; The first material layer on the side of the second sub-portion away from the layer to be etched, and the first material layer located between adjacent second sub-portions and covering the side of the layer to be etched close to the first mask layer in a direction parallel to the layer to be etched are removed to form a second side wall group at the opposite side walls of the second sub-portion, the second side wall group including two second sub-walls located on the side walls of the second sub-portion, and the second groove is also located between adjacent second side wall groups.

5. The patterning method according to claim 4, characterized in that: The step of removing the first material layer on a side of the second sub-portion away from the layer to be etched, and removing the first material layer located between adjacent second sub-portions and covering a side of the layer to be etched close to the first mask layer in a direction parallel to the layer to be etched also includes: The second sub-portion, the first anti-reflection layer at the bottom of the first trench, and the first anti-reflection layer at the bottom of the second trench are removed, and the first anti-reflection layer located on the side of the second mask layer away from the layer to be etched is left between two of the second sub-walls in the second sidewall group.

6. The patterning method according to claim 5, characterized in that: The step of forming a first mask pattern and a second mask pattern respectively on a side of the layer to be etched where the first mask layer is provided through the first groove and the second groove further includes: Removing the second mask layer aligned with the first groove to form the first mask groove in the second mask layer, and removing the second mask layer aligned with the second groove to form the second mask groove in the second mask layer, wherein the length of the second mask groove is greater than the length of the first mask groove; The first mask pattern includes the first mask groove, and the second mask pattern includes the second mask groove.

7. The patterning method according to claim 6, characterized in that: The step of etching the layer to be etched by using the first mask pattern and the second mask pattern to obtain a first patterned structure and a second patterned structure also includes: Removing at least a portion of the layer to be etched aligned with the first mask groove to form a first groove body in the layer to be etched, and removing at least a portion of the layer to be etched aligned with the second mask groove to form a second groove body in the layer to be etched, wherein the length of the second groove body is greater than the length of the first groove body; The first patterned structure includes the first groove body, and the second patterned structure includes the second groove body.

8. The patterning method according to claim 1, characterized in that: The step of forming a first material layer covering the plurality of mandrel structures on a side of the first mask layer away from the layer to be etched further comprises: A second photoresist layer is formed on a side of the first material layer away from the first mask layer, and the first sub-portion is located outside the coverage of the second photoresist layer, and the second sub-portion is located within the coverage of the second photoresist layer.

9. The patterning method according to claim 8, characterized in that: The step of removing the first sub-portion comprises: The second photoresist layer is removed to form a third sidewall spacer group at opposite sidewalls of the second sub-portion, wherein the third sidewall spacer group includes two third sub-walls located on the sidewalls of the second sub-portion, and the second groove is formed between two adjacent third sidewall spacers, and the first material layer is further formed with a spacer portion located at the bottom of the second groove and between adjacent third sidewall spacers; The first sub-portion is removed to form the first groove between two of the first sub-walls in the first spacer group, and the second groove is also located between two adjacent first spacer groups.

10. The patterning method according to claim 9, characterized in that: The step of forming a first mask pattern and a second mask pattern respectively on a side of the layer to be etched where the first mask layer is provided through the first groove and the second groove further includes: Forming a first mask sidewall in the first trench and a second mask sidewall in the second trench, and between adjacent third sidewall groups, the second mask sidewall covers a side of the spacer portion away from the layer to be etched; removing the first material layer except the spacer portion; The first mask pattern includes the first mask sidewall, and the second mask pattern includes the second mask sidewall.

11. The patterning method according to claim 10, characterized in that: The step of etching the layer to be etched by using the first mask pattern and the second mask pattern to obtain a first patterned structure and a second patterned structure also includes: Removing the layer to be etched that is not covered by the first mask sidewall, and removing the layer to be etched that is not covered by the second mask sidewall, to form a first routing line and a second routing line, respectively, wherein the length of the second routing line is greater than the length of the first routing line; The first patterned structure includes the first routing line, and the second patterned structure includes the second routing line.

12. The patterning method according to claim 1, characterized in that: In the step of forming a first material layer covering a plurality of the mandrel structures on a side of the first mask layer away from the layer to be etched: The second subsection is connected to the first subsection along the extension direction of the mandrel structure, and the second subsection is connected to one side of the first subsection, or the second subsection is connected to two opposite sides of the first subsection.

13. The patterning method according to claim 1, characterized in that: The material of the first mask layer includes an oxide material or a nitride material, and the material of the first material layer includes an oxide material or a nitride material.

14. A semiconductor structure, characterized in that: The semiconductor structure is provided with a first groove body and a second groove body, the length of the second groove body is greater than the length of the first groove body, and the first groove body and the second groove body are formed by the first patterned structure and the second patterned structure obtained by the patterning method described in any one of claims 1 to 7, 12 and 13.

15. A semiconductor structure, characterized in that: The semiconductor structure is provided with a first routing line and a second routing line, the length of the second routing line is greater than the length of the first routing line, and the first routing line and the second routing line are formed by the first patterned structure and the second patterned structure obtained by the patterning method according to any one of claims 1 and 8 to 13.

16. A memory, characterized in that: The memory comprises the semiconductor structure according to claim 14 or 15.

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