Silicon wafer detecting and rejecting system and silicon wafer detecting and rejecting method

Abstract

The invention relates to a silicon wafer detecting and rejecting system and a silicon wafer detecting and rejecting method. The silicon wafer detecting and rejecting system comprises a conveying device, a first rejecting device and a second rejecting device. The conveying device is provided with a first detection station and a second detection station which are arranged at intervals in the conveying direction. The first rejecting device comprises a plurality of first thickness detection assemblies and first rejecting assemblies which are in communication connection with the first thickness detection assemblies, the first thickness detection assemblies are located at a first detection station, and the first rejecting assemblies are movably located at one side of the conveying device and can move away silicon wafers on the first detection station; the second rejecting device comprises a plurality of second thickness detection assemblies and second rejecting assemblies which are in communication connection with the second thickness detection assemblies, the second thickness detection assemblies are located at a second detection station, and the second rejecting assemblies are located at one side of the conveying device and are arranged corresponding to the second detection station; and the second removing assembly has an opening state for removing the silicon wafers from the second detection station. And automatic and complete removal of the laminated sheets and fragments is ensured.

Description

Technical Field

[0001] The present disclosure relates to the technical field of solar photovoltaic cells, and in particular to a silicon wafer detection and rejection system and a silicon wafer detection and rejection method. Background Art

[0002] At present, monocrystalline / polycrystalline silicon wafers are the mainstream raw materials for making solar cells and are an indispensable part of various process routes in the market. In the production process of solar cells, the conveyor runway is an indispensable silicon wafer carrier, allowing the silicon wafers to flow on various process machines. When the silicon wafer is on the conveyor runway, some abnormal conditions such as defects, fragments, and stacking are inevitable.

[0003] In order to deal with defects and debris abnormalities and prevent abnormal silicon wafers from flowing into the machine and causing greater losses, factories are often equipped with advanced visual inspection mechanisms. However, when two silicon wafers are completely overlapped due to static adsorption or other reasons, the visual camera cannot identify the abnormality during processing, and manual identification or weighing method identification is required. However, these identification methods require the silicon wafers on the assembly line to stop running for a long time for identification and removal, and when debris and stacking occur at the same time, multiple identification devices are required for identification, making the equipment structure complex and difficult to identify and remove abnormal silicon wafers. It is impossible to ensure that stacking and debris are completely removed, and the operation speed is slow and the processing time is long, which affects the efficiency of factory production. Summary of the invention

[0004] Based on this, in order to address the above problems, it is necessary to provide a silicon wafer detection and rejection system and a silicon wafer detection and rejection method.

[0005] The disclosed embodiment provides a silicon wafer detection and rejection system, which includes a conveyor, a first rejection device and a second rejection device. The conveyor has a first detection station and a second detection station arranged at intervals along the conveying direction, and the conveyor is used to transport silicon wafers; the first rejection device includes a plurality of first thickness detection components and a first rejection component communicatively connected to the first thickness detection component, the plurality of first thickness detection components are located at the first detection station, the first rejection component can be movably located at one side of the conveyor, and can remove the silicon wafer on the first detection station; the second rejection device includes a plurality of second thickness detection components and a second rejection component communicatively connected to the second thickness detection component, the plurality of second thickness detection components are located at the second detection station, the second rejection component is located at one side of the conveyor and is arranged corresponding to the second detection station, and the second rejection component has an open state for rejecting the silicon wafer from the second detection station.

[0006] The silicon wafer detection and rejection system provided by the embodiment of the present disclosure has two detection stations, each of which has a thickness detection component and is correspondingly connected to a rejection device by communication. The first thickness detection component can detect abnormal phenomena of silicon wafers and feedback to the first rejection component to reject abnormal silicon wafers. If abnormal conditions still exist after one rejection, the second detection station will detect again and feedback to the second rejection component to reject abnormal silicon wafers, which can ensure that stacked wafers and fragments are completely removed and prevent incomplete rejection from causing abnormalities in subsequent processes. In addition, both detection stations use thickness detection components, which simplifies the structure of the system, and the entire rejection process is automated, which improves the processing speed of silicon wafers and the operating efficiency of the system.

[0007] In some embodiments, the conveying device includes a frame and two conveyor belts. The conveyor belts extend along the conveying direction and are arranged in parallel to form a conveying space. The first inspection station and the second inspection station are both located in the conveying space. The conveyor belts can be movably installed on the frame and move relative to the frame along the conveying direction. The upper surface of the conveyor belts is used to place silicon wafers.

[0008] With such arrangement, the structure of the original conveying device is not changed, and only two detection stations are added in the space formed by the two conveyor belts, which has a simple structure and is convenient for detection.

[0009] In some embodiments, the first thickness detection component includes multiple first thickness detectors, the first thickness detector includes a first transmitter and a first receiver correspondingly arranged on both sides of the upper surface of the conveyor belt, and the first transmitter is installed at the first detection station; the second thickness detection component includes multiple second thickness detectors, the second thickness detector includes a second transmitter and a second receiver correspondingly arranged on both sides of the upper surface of the conveyor belt, and the second transmitter is installed at the second detection station.

[0010] With this arrangement, the thickness detector detects silicon wafers in a non-contact manner by relying on signal transmission between the transmitter and the receiver, which greatly shortens the abnormal detection and processing time of silicon wafers. At the same time, secondary detection can avoid incomplete removal of abnormal silicon wafers.

[0011] In some embodiments, the shapes of the first inspection station and the second inspection station are both square; the plurality of first emitting elements are distributed at the center and four corners of the first inspection station; the plurality of second emitting elements are distributed at the center and four corners of the second inspection station.

[0012] With this arrangement, multiple detection components are installed at multiple points, which can identify debris in any position or stacking problems caused by debris as much as possible, improve the success rate of silicon wafer detection, facilitate the removal of abnormal debris, and ensure the normal rate of silicon wafers.

[0013] In some embodiments, the first rejection component includes a rotating mechanism and a suction cup installed at one end of the rotating mechanism, and the other end of the rotating mechanism is rotatably connected to the frame. The rotating mechanism can drive the suction cup to remove the silicon wafer on the first inspection station.

[0014] With this arrangement, when the silicon wafer is normal, the suction cup is away from the first inspection station. When the silicon wafer is abnormal, the rotating mechanism rotates relative to the frame so that the suction cup is located above the first inspection station, thereby removing the abnormal silicon wafer. The suction cup has high positioning accuracy, which minimizes the grasping time, and the suction cup has good stability when sucking silicon wafers and fragments, and will not damage other silicon wafers.

[0015] In some embodiments, the second rejection component includes a fixed bracket and a wind knife, the fixed bracket is fixed to the frame, the wind knife is located above the fixed bracket, the wind knife is provided with an air outlet, the air outlet corresponds to the second inspection station, and at least part of the air outlet is higher than the upper surface of the conveyor belt.

[0016] With such arrangement, the second rejecting assembly can reject abnormal silicon wafers again. The wind knife has a simple structure and is easy to set up. The blowing of the wind knife facilitates the debris to leave the conveying device, thereby ensuring the complete rejection of abnormal silicon wafers.

[0017] The disclosed embodiment also provides a silicon wafer detection and rejection method, using the above-mentioned silicon wafer detection and rejection system, the silicon wafer rejection method includes the following steps: starting a conveying device; pausing the conveying device when the silicon wafer arrives at a first detection station, obtaining multiple thickness parameters of the silicon wafer passing through the first detection station through multiple first thickness detection components, and determining whether the silicon wafer has an abnormality based on the multiple thickness parameters; if there is an abnormality, removing the top silicon wafer through the first rejection component, and restarting the conveying device after the first rejection component is completed; if there is no abnormality, restarting the conveying device to transport the silicon wafer to a second detection station; pausing the conveying device when the silicon wafer arrives at the second detection station, obtaining multiple thickness parameters of the silicon wafer passing through the second detection station through multiple second thickness detection components, and determining whether the current silicon wafer has fragments based on the multiple thickness parameters; if there are fragments, starting the second rejection component to remove the fragments from the second detection station. If there are no fragments, the silicon wafer detection and rejection step is completed.

[0018] The silicon wafer detection and rejection method provided in the embodiment of the present disclosure utilizes a silicon wafer detection and rejection system to perform abnormal detection on silicon wafers at a first detection station and a second detection station, respectively, and according to different detection results, a first rejection component and a second rejection component are respectively activated to remove abnormal silicon wafers. This rejection method automates the entire rejection process, improves the processing speed of silicon wafers and the operating efficiency of the system, ensures complete removal of stacked wafers and debris, and prevents abnormal silicon wafers caused by incomplete rejection from flowing into subsequent processes.

[0019] In some of the embodiments, the step of obtaining multiple thickness parameters of the silicon wafer passing through the first inspection station through multiple first thickness detection components, and determining whether the silicon wafer has an abnormality based on the multiple thickness parameters, also includes the steps of: obtaining the thickness parameters of each first thickness detection component; if the thickness parameters of each first thickness detection component are 2, it is determined that there is no silicon wafer; if the thickness parameters of each first thickness detection component are 1, it is determined that the silicon wafer has no abnormality; if the thickness parameters of each first thickness detection component are the same and less than 1, it is determined that the silicon wafer is abnormal and it is a stacking abnormality; if the thickness parameters of multiple first thickness detection components are different, it is determined that the silicon wafer is abnormal and there is a fragment abnormality.

[0020] Through the above steps, different conditions of the silicon wafers on the first inspection station can be obtained according to multiple first thickness detection components, so that the first rejection component can determine whether to reject the silicon wafers according to different feedback results. The detection method is simple and not prone to errors, which improves the processing speed of silicon wafers and the operating efficiency of the system.

[0021] In some of the embodiments, in the step of determining that the silicon wafer is abnormal and there are fragmented silicon wafers if the thickness parameters of the multiple first thickness detection components are different, the following steps are also included: if the thickness parameter range of the multiple first thickness detection components is less than or equal to 1, determining that the silicon wafer has both fragment abnormality and stacking abnormality; if the thickness parameter range of the multiple first thickness detection components is greater than or equal to 1 and less than or equal to 2, determining that the silicon wafer only has fragment abnormality.

[0022] Through the above steps, it can be clearly determined whether the silicon wafer at the first inspection station has abnormal fragmentation, abnormal stacking, or abnormal fragmentation and stacking at the same time, which facilitates one-time removal and processing or reuse of the silicon wafer after removal.

[0023] In some of the embodiments, the step of obtaining multiple thickness parameters of the silicon wafer passing through the second inspection station through multiple second thickness detection components, and determining whether the current silicon wafer has fragments based on the multiple thickness parameters, also includes the steps of: obtaining the thickness parameters of each second thickness detection component; if the thickness parameters of each second thickness detection component are 2, it is determined that there is no silicon wafer; if the thickness parameters of each second thickness detection component are 1, it is determined that there is no abnormality in the silicon wafer; if the thickness parameters of multiple second thickness detection components are different and the thickness parameter range is greater than or equal to 1 and less than or equal to 2, it is determined that the silicon wafer has fragment abnormality.

[0024] Through the above steps, different conditions of the silicon wafers on the second inspection station can be obtained according to multiple second thickness detection components, so that the second rejection component can determine whether to reject the silicon wafers according to different feedback results. The detection method is simple and not prone to errors, which improves the processing speed of silicon wafers and the operating efficiency of the system. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A side view of a silicon wafer on a first inspection station of a silicon wafer inspection and rejection system in an embodiment of the present disclosure;

[0026] Figure 2 A top view of a silicon wafer detection and rejection system in an embodiment of the present disclosure when the silicon wafer is normal;

[0027] Figure 3 A top view of a silicon wafer detection and rejection system when a silicon wafer on a first detection station is abnormal in an embodiment of the present disclosure;

[0028] Figure 4 It is a flowchart of the silicon wafer detection and rejection method in the embodiment of the present disclosure.

[0029] Reference numerals:

[0030] 1000. Silicon wafer detection and rejection method; 100. Silicon wafer detection and rejection system; 1. Conveying device; 11. First detection station; 12. Second detection station; 13. Conveyor belt; 14. Conveying space; 2. First rejection device; 21. First thickness detection component; 211. First thickness detector; 2111. First launcher; 22. First rejection component; 221. Rotating mechanism; 222. Suction cup; 3. Second rejection device; 31. Second thickness detection component; 311. Second thickness detector; 3111. Second launcher; 32. Second rejection component; 321. Wind knife. DETAILED DESCRIPTION

[0031] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present disclosure more obvious and understandable, the specific implementation of the embodiments of the present disclosure is described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the embodiments of the present disclosure. However, the embodiments of the present disclosure can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the embodiments of the present disclosure, so the embodiments of the present disclosure are not limited by the specific embodiments disclosed below.

[0032] In the description of the embodiments of the present disclosure, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "perpendicular", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the embodiments of the present disclosure.

[0033] In the embodiments of the present disclosure, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0034] In addition, the terms "first", "second", "third", etc. are used only for descriptive purposes and should not be understood as indicating or suggesting relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. Exemplarily, the first detection station may also be referred to as the second detection station, and the second detection station may also be referred to as the first detection station. In the description of the present invention, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0035] In the embodiments of the present disclosure, unless otherwise clearly specified and limited, the terms "connected", "connection" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a flexible connection, or a rigid connection in at least one direction; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or a direct connection with the presence of an intermediate medium, or it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly limited. The terms "install", "set", "fixed" and the like can be broadly understood as connection. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present disclosure can be understood according to the specific circumstances.

[0036] See also Figure 1 , Figure 1 The side view structure of the silicon wafer detection and rejection system 100 in the embodiment of the present disclosure rejecting the silicon wafer on the first inspection station 11 is shown. The present disclosure relates to the technical field of solar photovoltaic cells, and the silicon wafer detection and rejection system 100 of the present disclosure is used in the silicon wafer manufacturing process.

[0037] Combination Figure 2 and Figure 3 The embodiment of the present disclosure provides a silicon wafer detection and rejection system 100. The silicon wafer detection and rejection system 100 includes a conveying device 1, a first rejection device 2 and a second rejection device 3. The conveying device 1 transports silicon wafers along the conveying direction. The conveying device 1 has a first detection station 11 and a second detection station 12. The first detection station 11 and the second detection station 12 are arranged at intervals along the conveying direction. The first rejection device 2 includes a plurality of first thickness detection components 21 and a first rejection component 22. The plurality of first thickness detection components 21 are located at the first detection station 11. The first rejection component 22 is movably located at one side of the conveying device 1. The first rejection component 22 is communicatively connected to the first thickness detection component 21. The first rejection component 22 can remove the silicon wafer on the first detection station 11. The second rejection device 3 includes a plurality of second thickness detection components 31 and a second rejection component 32. Multiple second thickness detection components 31 are located at the second inspection station 12, the second rejection component 32 is located on one side of the conveying device 1 and is arranged corresponding to the second inspection station 12, the second rejection component 32 is communicatively connected to the second thickness detection component 31, and the second rejection component 32 has an open state for rejecting the silicon wafer from the second inspection station 12.

[0038] In the silicon wafer detection and rejection system 100 provided in the embodiment of the present disclosure, the silicon wafer moves along the conveying direction on the conveying device 1. When the silicon wafer is conveyed to the first inspection station 11, the conveying device 1 stops, and multiple first thickness detection components 21 detect the silicon wafer and determine whether the silicon wafer is abnormal. When the silicon wafer is abnormal, the first thickness detection component 21 feeds back a signal to the first rejection component 22 to remove the top silicon wafer of the first inspection station 11; then the conveying device 1 is started so that the silicon wafer is then conveyed to the second inspection station 12, and multiple second thickness detection components 31 detect the silicon wafer and determine whether the silicon wafer is abnormal. When the silicon wafer is abnormal, the second rejection component 32 is turned on to reject the silicon wafer at the second inspection station 12.

[0039] The silicon wafer detection and rejection system 100 provided in the embodiment of the present disclosure adds two detection stations spaced apart on the original transmission structure, and each detection station is provided with multiple thickness detection components, and the two rejection components are respectively provided corresponding to the two detection stations, and the structure is simple and convenient to set up. The same detection component is used for easy installation and signal processing, and can distinguish and feedback various situations of stacking, fragments, stacking and fragments of silicon wafers, and automatically perform the rejection work when silicon wafers are abnormal, thereby improving the processing speed of silicon wafers and the operating efficiency of the system. At the same time, the two inspections and rejections can further handle abnormal situations, and can ensure that stacking and fragments are completely removed, and prevent incomplete rejection from causing abnormalities in subsequent processes.

[0040] Exemplarily, the interval between the first inspection station 11 and the second inspection station 12 along the conveying direction is larger than the size of a silicon wafer to avoid inspection abnormalities caused by too close a distance.

[0041] Exemplarily, the size and shape of the first inspection station 11 are the same as the size and shape of the second inspection station 12. Exemplarily, the upper surface of the first inspection station 11 and the upper surface of the second inspection station 12 are both lower than the upper surface of the conveying device 1.

[0042] Exemplarily, the upper surfaces of the plurality of first thickness detection components 21 are flush with the upper surface of the first detection station 11. The upper surfaces of the plurality of second thickness detection components 31 are flush with the upper surface of the second detection station 12. In other embodiments, the upper surfaces of the plurality of first thickness detection components 21 are lower than the upper surface of the first detection station 11. The upper surfaces of the plurality of second thickness detection components 31 are lower than the upper surface of the second detection station 12. Alternatively, the upper surfaces of the plurality of first thickness detection components 21 are higher than the upper surface of the first detection station 11 and lower than the upper surface of the conveyor 1. The upper surfaces of the plurality of second thickness detection components 31 are higher than the upper surface of the second detection station 12 and lower than the upper surface of the conveyor 1.

[0043] refer to Figures 1 to 3 In some embodiments, the conveyor 1 includes a frame (not shown) and two conveyor belts 13. The conveyor belts 13 extend along the conveying direction and are arranged side by side to form a conveying space 14. The first inspection station 11 and the second inspection station 12 are both located in the conveying space 14. The conveyor belts 13 can be movably mounted on the frame and move relative to the frame along the conveying direction. The upper surface of the conveyor belts 13 is used to place silicon wafers. In this arrangement, the structure of the original conveyor 1 does not change, and only two inspection stations are added in the space formed by the two conveyor belts 13. The structure is simple and the inspection is convenient.

[0044] Exemplarily, the distance between the two conveyor belts 13 is smaller than the size of the silicon wafers, so as to prevent the silicon wafers from falling from the conveying space 14 in the middle of the conveyor belts 13 during conveyance.

[0045] Exemplarily, the frame is located at the lower side of the conveyor belt 13, and the first inspection station 11 and the second inspection station 12 are both horizontally installed on the upper surface of the frame.

[0046] refer to Figures 1 to 3 In some embodiments, the first thickness detection assembly 21 includes a plurality of first thickness detectors 211, the first thickness detector 211 includes a first transmitter 2111 and a first receiver (not shown) correspondingly arranged on both sides of the upper surface of the conveyor belt 13, and the first transmitter 2111 is installed at the first detection station 11; the second thickness detection assembly 31 includes a plurality of second thickness detectors 311, the second thickness detector 311 includes a second transmitter 3111 and a second receiver (not shown) correspondingly arranged on both sides of the upper surface of the conveyor belt 13, and the second transmitter 3111 is installed at the second detection station 12. With such a configuration, the thickness detector detects the silicon wafer in a non-contact manner by relying on the signal transmission between the transmitter and the receiver, so that the abnormal detection and processing time of the silicon wafer is greatly shortened, and at the same time, the secondary detection can avoid the incomplete removal of abnormal silicon wafers.

[0047] Exemplarily, the first emitting element 2111 is used to emit laser signals, and the first receiving element is used to receive the emitted laser signals. Due to different thicknesses of silicon wafers, the thickness parameters received by the first receiving element are different. Multiple first emitting elements 2111 emit laser signals simultaneously.

[0048] Exemplarily, the first thickness detector 211 and the second thickness detector 311 both communicate using IO signals.

[0049] Exemplarily, the distance between the first receiving member and the second receiving member and the upper surface of the conveyor belt 13 is greater than the thickness of two silicon wafers.

[0050] refer to Figures 1 to 3 In some embodiments, the shapes of the first inspection station 11 and the second inspection station 12 are both square; the multiple first emitting elements 2111 are distributed at the center and four corners of the first inspection station 11; the multiple second emitting elements 3111 are distributed at the center and four corners of the second inspection station 12. In this way, multiple inspection components are installed in a multi-point manner, which can identify debris at any position or stacking problems caused by debris as much as possible, improve the success rate of silicon wafer inspection, facilitate the removal of abnormal debris, and ensure the normal rate of silicon wafers.

[0051] Exemplarily, two first emitting elements 2111 at four corners are arranged in parallel along a direction perpendicular to the conveying direction, so that the plurality of first emitting elements 2111 are displayed as three arranged in parallel along the conveying direction. In other embodiments, five first emitting elements 2111 are arranged in parallel in sequence along the conveying direction. The first emitting elements 2111 are arranged symmetrically along the diagonal direction. It can be understood that the arrangement of the second detection component is the same as the arrangement of the first detection component.

[0052] In other embodiments, the number of first detectors can be 1, 2, 3, 4, 6 or more. The more the number of first detectors is, the smaller the interval between the multiple first detectors is, and it is easier to identify small fragments. The shape of the first detection station 11 and the shape of the second detection station 12 can also be polygonal, irregular or other shapes.

[0053] refer to Figures 1 to 3 In some embodiments, the first rejection component 22 includes a rotating mechanism 221 and a suction cup 222 installed at one end of the rotating mechanism 221. The other end of the rotating mechanism 221 is rotatably connected to the frame, and the rotating mechanism 221 can drive the suction cup 222 to remove the silicon wafer on the first inspection station 11. In this way, when the silicon wafer is normal, the suction cup 222 is away from the first inspection station 11. When the silicon wafer is abnormal, the rotating mechanism 221 rotates relative to the frame so that the suction cup 222 is located above the first inspection station 11, thereby rejecting the abnormal silicon wafer. The suction cup 222 has high positioning accuracy, which minimizes the grasping time, and the suction cup 222 has good stability when sucking silicon wafers and fragments, and will not cause damage to the remaining silicon wafers.

[0054] Exemplarily, the rotating mechanism 221 is located on the right side of the first inspection station 11, and the rotating mechanism 221 is arranged parallel to the conveyor belt 13 when no rejection work is performed. When the silicon wafer needs to be rejected, the end of the rotating mechanism 221 that is not connected to the suction cup 222 rotates 90° so that the suction cup 222 moves from a position parallel to the conveyor belt 13 to above the first inspection station 11. The suction cup 222 may correspond to the middle position of the first inspection station 11. After the suction cup 222 absorbs the silicon wafer, the end of the rotating mechanism 221 that is not connected to the suction cup 222 rotates 90° in the opposite direction to return to the original position. Exemplarily, a silicon wafer collection device is provided at the original position for collecting silicon wafers rejected from the first inspection station 11.

[0055] Exemplarily, the suction cup 222 is square in shape, and the area of ​​the suction cup 222 is larger than the area of ​​the silicon wafer.

[0056] refer to Figures 1 to 3In some embodiments, the second rejection assembly 32 includes a fixed bracket (not shown) and an air knife 321, the fixed bracket is fixed to the frame, the air knife 321 is located on the fixed bracket, and the air knife 321 is provided with an air outlet, the air outlet corresponds to the second inspection station 12, and at least part of the air outlet is higher than the upper surface of the conveyor belt 13. In this way, the second rejection assembly 32 can reject abnormal silicon wafers again, the air knife 321 has a simple structure and is easy to set up, and the blowing of the air knife 321 facilitates the debris to leave the conveyor 1, ensuring that the abnormal silicon wafers are completely rejected.

[0057] Exemplarily, the wind knife 321 has a plurality of air outlets and is sequentially arranged along the conveying direction. Exemplarily, the lower surface of the air outlet is flush with the conveyor belt 13 so that the air outlet is completely higher than the upper surface of the conveyor belt 13.

[0058] Exemplarily, the first reject assembly 22 and the second reject assembly 32 are on the same side of the conveyor 1. This arrangement reduces the volume of the silicon wafer detection and rejection system 100 and makes the layout of the system more reasonable. In other embodiments, the first reject assembly 22 and the second reject assembly 32 can be located on both sides of the conveyor 1, respectively.

[0059] See also Figure 4 The silicon wafer detection and rejection method 1000 provided in the embodiment of the present disclosure includes the following steps S101 to S103. The method 1000 needs to use the silicon wafer detection and rejection system 100 mentioned above.

[0060] Step S101 , starting the conveying device 1 to convey the silicon wafer; illustratively, the conveying direction is from the first inspection station 11 to the second inspection station 12 .

[0061] In step S102, the conveying device 1 is paused when the silicon wafer arrives at the first inspection station 11, and multiple thickness parameters of the silicon wafer passing through the first inspection station 11 are obtained through multiple first thickness detection components 21, and it is determined whether there is an abnormality in the silicon wafer based on the multiple thickness parameters. If there is an abnormality, the top silicon wafer is removed by the first rejection component 22, and the conveying device 1 is restarted after the first rejection component 22 is completed; if there is no abnormality, the conveying device 1 is restarted to transport the silicon wafer to the second inspection station 12.

[0062] Step S103, when the silicon wafer arrives at the second inspection station 12, the conveying device 1 is paused, and multiple thickness parameters of the silicon wafer passing through the second inspection station 12 are obtained through multiple second thickness detection components 31, and it is determined whether there are fragments in the current silicon wafer based on the multiple thickness parameters; if there are fragments, the second rejection component 32 is started to remove the fragments from the second inspection station 12. If there are no fragments, the silicon wafer detection and rejection steps are completed.

[0063] The silicon wafer detection and rejection method 1000 provided in the embodiment of the present disclosure utilizes the silicon wafer detection and rejection system 100 to perform abnormal detection on the silicon wafers at the first detection station 11 and the second detection station 12 respectively, and according to different detection results, the first rejection component 22 and the second rejection component 32 are respectively activated to remove abnormal silicon wafers. This rejection method automates the entire rejection process, improves the processing speed of silicon wafers and the operating efficiency of the system, ensures complete removal of stacked wafers and debris, and prevents abnormal silicon wafers caused by incomplete rejection from flowing into subsequent processes.

[0064] Exemplarily, step S102 relies on the rotation of the rotating mechanism 221 to drive the suction cup 222 to move away from the top silicon wafer. Step S103 uses the wind knife 321 to send air to remove silicon wafer fragments.

[0065] In some embodiments, in the step of obtaining multiple thickness parameters of the silicon wafer passing through the first inspection station 11 through multiple first thickness detection components 21, and determining whether the silicon wafer is abnormal based on the multiple thickness parameters, the steps are also included: obtaining the thickness parameters of each first thickness detection component 21; if the thickness parameters of each first thickness detection component 21 are 2, it is determined that there is no silicon wafer; if the thickness parameters of each first thickness detection component 21 are 1, it is determined that the silicon wafer is normal; if the thickness parameters of each first thickness detection component 21 are the same and less than 1, it is determined that the silicon wafer is abnormal, and the stacking is abnormal; if the thickness parameters of multiple first thickness detection components are different, it is determined that the silicon wafer is abnormal and there is a fragment abnormality. Through the above steps, different conditions of the silicon wafer on the first inspection station 11 can be obtained according to multiple first thickness detection components 21, so that the first rejection component 22 can determine whether to reject the silicon wafer according to different feedback results. The detection method is simple and not prone to errors, which improves the processing speed of the silicon wafer and the operating efficiency of the system.

[0066] In some embodiments, if the thickness parameters of the multiple first thickness detection components 21 are different, the step of determining that the silicon wafer is abnormal and there are fragmented silicon wafers also includes the following steps: if the thickness parameter range of the multiple first thickness detection components 21 is less than or equal to 1, it is determined that the silicon wafer has both fragment abnormality and stacking abnormality; if the thickness parameter range of the multiple first thickness detection components 21 is greater than or equal to 1 and less than or equal to 2, it is determined that the silicon wafer only has fragment abnormality. Through the above steps, it can be clearly determined whether the silicon wafer at the first detection station 11 is abnormal in fragments, stacking, or both, which is convenient for one-time removal and processing or reuse of the silicon wafer after removal.

[0067] In some embodiments, in the step of obtaining multiple thickness parameters of silicon wafers passing through the second inspection station 12 through multiple second thickness detection components 31, and determining whether the current silicon wafer has fragments based on the multiple thickness parameters, the steps also include: obtaining the thickness parameters of each second thickness detection component 31; if the thickness parameters of each second thickness detection component 31 are 2, it is determined that there is no silicon wafer; if the thickness parameters of each second thickness detection component 31 are 1, it is determined that there is no abnormality in the silicon wafer; if the thickness parameters of multiple second thickness detection components are different and the thickness parameter range is greater than or equal to 1 and less than or equal to 2, it is determined that there is an abnormality in the silicon wafer. Through the above steps, different conditions of the silicon wafer on the second inspection station 12 can be obtained according to the multiple second thickness detection components 31, so that the second rejection component 32 can determine whether to reject the silicon wafer according to different feedback results. The detection method is simple and not prone to errors, which improves the processing speed of the silicon wafer and the operating efficiency of the system.

[0068] In Example 1, the conveying device 1 is started, and the conveying device 1 is paused when it reaches the first inspection station 11. If the thickness parameter of each first thickness detection component 21 is 2, it is determined that there is no silicon wafer on the conveying device 1. The conveying device 1 is restarted to transport the silicon wafer to the second inspection station 12. If the thickness parameter of each second thickness detection component 31 is 2, it is determined that there is no silicon wafer on the conveying device 1 again. The conveying device 1 is restarted again to complete the silicon wafer detection and removal steps.

[0069] In Example 2, the conveying device 1 is started, and the conveying device 1 is paused when the silicon wafer reaches the first inspection station 11. If the thickness parameter of each first thickness detection component 21 is 1, it is judged that the silicon wafer on the conveying device 1 is normal. The conveying device 1 is restarted to transport the silicon wafer to the second inspection station 12. If the thickness parameter of each second thickness detection component 31 is 1, it is judged that the silicon wafer on the conveying device 1 is normal again. The conveying device 1 is restarted again to complete the silicon wafer detection and removal steps.

[0070] Embodiment 3, start the conveying device 1, and pause the conveying device 1 when the silicon wafer reaches the first inspection station 11. The thickness parameters of each first thickness detection component 21 are the same and less than 1, then it is judged that there is stacking abnormality of the silicon wafers on the conveying device 1, and the top silicon wafer is removed by the first rejection component 22, that is, the suction cup 222, and the conveying device 1 is restarted after the first rejection component 22 is completed. When the silicon wafer reaches the second inspection station 12, the conveying device 1 is paused. The thickness parameters of each first thickness detection component 21 are 1, then it is judged again that the silicon wafer on the conveying device 1 is normal, and the conveying device 1 is restarted again to complete the silicon wafer detection and rejection steps.

[0071] Embodiment 4, start the conveying device 1, and pause the conveying device 1 when the silicon wafer reaches the first inspection station 11. The thickness parameter range of each first thickness detection component 21 is greater than or equal to 1 and less than or equal to 2, and the thickness parameters of multiple first thickness detection components 21 are different. It is judged that there are only abnormal fragments on the silicon wafer on the conveying device 1, and the first rejection component 22, that is, the suction cup 222, is used to remove the fragments. After the first rejection component 22 is completed, restart the conveying device 1, and pause the silicon wafer when it reaches the second inspection station 12. The thickness parameter of each first thickness detection component 21 is 2, then it is judged again that there is no silicon wafer on the conveying device 1, and restart the conveying device 1 again to complete the silicon wafer detection and rejection steps.

[0072] Embodiment 5, start the conveying device 1, and pause the conveying device 1 when the silicon wafer reaches the first inspection station 11. The thickness parameter range of each first thickness detection component 21 is less than or equal to 1, and the thickness parameters of multiple first thickness detection components 21 are different, then it is judged that there are fragments and stacking abnormalities on the silicon wafer on the conveying device 1, and the first rejection component 22, that is, the suction cup 222, is used to remove the top silicon wafer, and restart the conveying device 1 after the first rejection component 22 is completed. When the silicon wafer reaches the second inspection station 12, the conveying device 1 is paused. The thickness parameter of each first thickness detection component 21 is 1, then it is judged again that the silicon wafer on the conveying device 1 is normal, and the conveying device 1 is restarted again to complete the silicon wafer detection and rejection steps. This embodiment is a double-layer silicon wafer stacking and there is an abnormal fragmentation on the upper silicon wafer.

[0073] Embodiment 6, start the conveying device 1, and pause the conveying device 1 when the silicon wafer reaches the first inspection station 11. The thickness parameter range of each first thickness detection component 21 is less than or equal to 1, and the thickness parameters of multiple first thickness detection components 21 are different. It is judged that there are both fragments and stacking abnormalities on the silicon wafer on the conveying device 1. The first rejection component 22, i.e., the suction cup 222, is used to remove the top silicon wafer, and the conveying device 1 is restarted after the first rejection component 22 is completed. When the silicon wafer reaches the second inspection station 12, the conveying device 1 is paused. The thickness parameter range of each first thickness detection component 21 is greater than or equal to 1 and less than or equal to 2, and it is judged again that there are silicon wafer fragments on the conveying device 1. The second rejection component 32, i.e., the wind knife 321, is started to blow the fragments away from the second inspection station 12; the conveying device 1 is restarted again to complete the silicon wafer detection and rejection step. This embodiment is a double-layer silicon wafer stacking and there is an abnormal fragmentation on the lower silicon wafer.

[0074] The technical features of the embodiments disclosed above can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the embodiments described above are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0075] In the embodiments disclosed above, unless otherwise clearly specified and limited, the execution order of each step is not limited, for example, it can be executed in parallel, or it can be executed successively in different orders. The sub-steps of each step can also be executed alternately. The above-mentioned various forms of processes can be used, and steps can be reordered, added or deleted, as long as the desired results of the technical solution provided in the embodiment of the present disclosure can be achieved, and this document does not limit it here.

[0076] The embodiments disclosed above only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the attached claims.

Claims

1. Silicon wafer detection and rejection system, characterized in that: include: A conveying device, comprising a first inspection station and a second inspection station spaced apart along a conveying direction, wherein the conveying device is used to transport silicon wafers; A first rejecting device, the first rejecting device comprising a plurality of first thickness detection components and a first rejecting component communicatively connected to the first thickness detection components, the plurality of first thickness detection components are located at the first detection station, the first rejecting component is movably located at one side of the conveying device, and is capable of removing the silicon wafer on the first detection station; and The second rejecting device includes a plurality of second thickness detection components and a second rejecting component communicatively connected to the second thickness detection component, the plurality of second thickness detection components are located at the second detection station, the second rejecting component is located at one side of the conveying device and is arranged corresponding to the second detection station, and the second rejecting component has an open state for rejecting silicon wafers from the second detection station.

2. The silicon wafer detection and rejection system according to claim 1, characterized in that: The conveying device includes a frame and two conveyor belts, the conveyor belts extend along the conveying direction and are arranged in parallel to form a conveying space, the first inspection station and the second inspection station are both located in the conveying space, the conveyor belts can be movably installed on the frame and move relative to the frame along the conveying direction, and the upper surface of the conveyor belts is used to place silicon wafers.

3. The silicon wafer detection and rejection system according to claim 2, characterized in that: The first thickness detection assembly includes a plurality of first thickness detectors, the first thickness detector includes a first emitting element and a first receiving element correspondingly arranged on both sides of the upper surface of the conveyor belt, and the first emitting element is installed at the first detection station; The second thickness detection assembly includes a plurality of second thickness detectors. The second thickness detector includes a second emitting element and a second receiving element correspondingly arranged on both sides of the upper surface of the conveyor belt. The second emitting element is installed at the second detection station.

4. The silicon wafer detection and rejection system according to claim 3, characterized in that: The shapes of the first inspection station and the second inspection station are both square; The plurality of first emitting elements are distributed at the center and four corners of the first inspection station; the plurality of second emitting elements are distributed at the center and four corners of the second inspection station.

5. The silicon wafer detection and rejection system according to claim 4, characterized in that: The first rejection component includes a rotating mechanism and a suction cup installed at one end of the rotating mechanism, and the other end of the rotating mechanism is rotatably connected to the frame. The rotating mechanism can drive the suction cup to remove the silicon wafer on the first inspection station.

6. The silicon wafer detection and rejection system according to claim 4, characterized in that: The second rejection component includes a fixed bracket and a wind knife, the fixed bracket is fixed to the frame, the wind knife is located above the fixed bracket, the wind knife is provided with an air outlet, the air outlet corresponds to the second detection station, and at least part of the air outlet is higher than the upper surface of the conveyor belt.

7. A method for detecting and rejecting silicon wafers, using the silicon wafer detecting and rejecting system according to any one of claims 1 to 6, characterized in that: Includes steps: Activate the conveyor; When the silicon wafer arrives at the first inspection station, the conveying device is paused, multiple thickness parameters of the silicon wafer passing through the first inspection station are obtained through multiple first thickness detection components, and whether the silicon wafer is abnormal is determined based on the multiple thickness parameters; If there is an abnormality, the top silicon wafer is removed by the first rejection assembly, and the conveyor is restarted after the first rejection assembly is completed; If there is no abnormality, restart the conveying device to transport the silicon wafer to the second inspection station; When the silicon wafer reaches the second inspection station, the conveying device is paused, multiple thickness parameters of the silicon wafer passing through the second inspection station are obtained through multiple second thickness detection components, and whether there are fragments in the current silicon wafer is determined based on the multiple thickness parameters; If there are fragments, activate the second rejection component to remove the fragments from the second inspection station If there are no fragments, the silicon wafer detection and rejection steps are completed.

8. The silicon wafer detection and rejection method according to claim 7, characterized in that: In the step of obtaining multiple thickness parameters of the silicon wafer passing through the first inspection station through multiple first thickness detection components, and determining whether the silicon wafer has an abnormality based on the multiple thickness parameters, the step further includes: Obtaining a thickness parameter of each first thickness detection component; If the thickness parameter of each first thickness detection component is 2, it is determined that there is no silicon wafer; If the thickness parameters of each first thickness detection component are 1, it is determined that the silicon wafer has no abnormality; If the thickness parameters of each first thickness detection component are the same and less than 1, it is determined that the silicon wafer is abnormal and the stacking is abnormal; If the thickness parameters of the components detected by the plurality of first thickness detections are all different, it is determined that the silicon wafer is abnormal and abnormal fragments exist.

9. The silicon wafer detection and rejection method according to claim 8, characterized in that: If the thickness parameters of the plurality of first thickness detection components are different in the step, it is determined that the silicon wafer is abnormal and there are broken silicon wafers, and the step further includes: If the thickness parameter ranges of the plurality of first thickness detection components are less than or equal to 1, it is determined that the silicon wafer has both fragment abnormality and stacking abnormality; If the thickness parameter range of the plurality of first thickness detection components is greater than or equal to 1 and less than or equal to 2, it is determined that only fragment abnormality exists in the silicon wafer.

10. The silicon wafer detection and rejection method according to claim 9, characterized in that: In the step of obtaining multiple thickness parameters of the silicon wafer passing through the second inspection station through multiple second thickness detection components, and determining whether the current silicon wafer is in the debris based on the multiple thickness parameters, the step also includes: Obtaining thickness parameters of each second thickness detection component; If the thickness parameter of each second thickness detection component is 2, it is determined that there is no silicon wafer; If the thickness parameters of each second thickness detection component are 1, it is determined that the silicon wafer has no abnormality; If the thickness parameters of the components obtained by the multiple second thickness detections are all different and the thickness parameter range is greater than or equal to 1 and less than or equal to 2, it is determined that there is abnormal fragmentation in the silicon wafer.

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