A dual-wavelength slab laser

Abstract

The present invention belongs to the field of laser technology, and relates to a dual-wavelength slab laser, including a laser resonant cavity unit and a slab crystal pump unit; the laser resonant cavity unit has: a first optical path, along which a first total reflection mirror, a slab crystal, a first electro-optical Q switch, and a first output mirror are sequentially arranged; a second optical path, along which a second total reflection mirror, a slab crystal, a second electro-optical Q switch, and a second output mirror are sequentially arranged; the slab crystal pump unit is side-pumped or large-surface pumped, and the slab crystal pump unit includes a semiconductor laser array and an optical waveguide; the shape of the slab crystal is trapezoidal, and the slab crystal is a Nd:YAG crystal; the laser wavelengths output by the dual-wavelength slab laser are 1064nm and 1319nm respectively. The dual-wavelength slab laser of the present application has the advantages of high pump power and high beam quality, and achieves maximum power output.

Description

Technical Field

[0001] The invention belongs to the technical field of lasers, and in particular relates to a dual-wavelength slab laser. Background Art

[0002] The first dual-wavelength laser was developed by CG Betha et al. of Bell Labs in 1973, who used Nd:YAG crystal in a three-mirror colinear cavity with a Q switch to achieve dual-wavelength pulse operation of 1064nm and 1319nm (CG Betha, IEEEJournal Quantum Electronics, QE-9, 254 (1973)). Since then, reports have been made on the use of other laser crystals to achieve dual-wavelength pulse operation (W. Vollmer, MG Knights et al., Conferences on Laser and Electro-optics, Digest of Technical Papers, 188, 1983, May, 17-21, J.Machan, R. Kurtz et al., Applied Physics Letters, Vol.51, No.17, 1313 (1987), VE Nadtoncheev, OE Nanii, Soviet Journal of Quantum Electronics, Vol.19, No.4, 444 (1991)).

[0003] At this stage, people have reached a general consensus on the wide application value of dual-wavelength lasers. For example, in the civilian field, dual-wavelength lasers can be applied to laser medicine, high-brightness laser color display, laser color printing and other directions; in the military field, dual-wavelength lasers can be applied to differential absorption lidar; at the laboratory level, dual-wavelength lasers can be applied to nonlinear frequency conversion, fine laser spectroscopy, multi-photon distribution ionization of atoms and molecules and other directions. It should be pointed out that compared with gas dual-wavelength lasers, solid dual-wavelength lasers are more valuable for research. In order to obtain stable and more energetic dual-wavelength laser output in solid dual-wavelength lasers, researchers have focused their research directions on the following three aspects: ① Simultaneously output the fundamental frequency light of the laser operating at a fixed wavelength and its frequency conversion light; ② The light emitted by the laser based on the broadband emission spectrum of the laser medium is used to achieve dual-wavelength operation through a frequency-selective device; ③ Dual-wavelength laser output is achieved based on the two emission peaks of the emission spectrum of the laser medium. Among the above three methods of obtaining dual-wavelength laser output, the first two are more mature, but the disadvantage is that other wavelengths are also doped while obtaining dual-wavelength laser output, and the obtained dual-wavelength laser output energy is low. As for the third method of dual-wavelength laser output, because its device structure is relatively simple, the implementation cost is low, and the wavelength band is rich, it has the potential for further exploration; however, for Nd:YAG crystals, there are also some difficulties in the simultaneous output of 1064nm and 1319nm: ① The oscillation effect of suppressing redundant spectral lines such as 1338nm is not good; ② It is difficult to adjust the output power ratio of 1064nm / 1319nm dual-wavelength laser; ③ It is difficult to control the threshold of 1064nm / 1319nm laser to be equal and the laser structure devices are complicated.

[0004] Therefore, there is an urgent need to propose a dual-wavelength slab laser to solve the existing technical problems of suppressing the oscillation of redundant spectral lines such as 1338nm, adjusting the output power ratio of the 1064nm / 1319nm dual-wavelength laser, controlling the thresholds of the 1064nm / 1319nm laser to be equal, and the complexity of the laser structure devices when realizing the 1064nm / 1319nm dual-wavelength laser output based on the two emission peaks of the emission spectrum of the laser medium. Summary of the invention

[0005] In view of the technical problems in the prior art of suppressing the oscillation of redundant spectral lines such as 1338nm, adjusting the output power ratio of the 1064nm / 1319nm dual-wavelength laser, controlling the thresholds of the 1064nm / 1319nm laser to be equal, and the complicated laser structure components when realizing the 1064nm / 1319nm dual-wavelength laser output based on the two emission peaks of the emission spectrum of the laser medium, the present invention proposes a dual-wavelength slab laser to solve at least one of the above technical problems.

[0006] In a preferred embodiment of the present invention, a dual-wavelength slab laser is provided, wherein the dual-wavelength slab laser comprises a laser resonant cavity unit and a slab crystal pump unit;

[0007] The laser resonant cavity unit comprises: a first optical path, along which a first total reflection mirror, a slab crystal, a first electro-optical Q switch, and a first output mirror are sequentially arranged; a second optical path, along which a second total reflection mirror, a slab crystal, a second electro-optical Q switch, and a second output mirror are sequentially arranged;

[0008] The slab crystal pump unit is side-pumped or large-surface pumped, and the slab crystal pump unit includes a semiconductor laser array and an optical waveguide;

[0009] The apertures of the first electro-optical Q switch and the second electro-optical Q switch are matched to the diameters of the lasers received by the first electro-optical Q switch and the second electro-optical Q switch respectively; the coating center wavelengths of the first total reflection mirror and the first output mirror are the same, and the coating center wavelengths of the second total reflection mirror and the second output mirror are the same; the coating center wavelengths of the first total reflection mirror and the first output mirror and the coating center wavelengths of the second total reflection mirror and the second output mirror respectively correspond to the wavelengths of the two absorption peaks with the largest and second largest absorption cross sections of the slab crystal;

[0010] The shape of the lath crystal is trapezoidal, and the lath crystal is Nd:YAG crystal;

[0011] The laser light of the first optical path and the laser light of the second optical path simultaneously complete oscillation along the first direction and conduction along the second direction in the slab crystal;

[0012] The laser wavelengths output by the dual-wavelength slab laser are 1064 nm and 1319 nm respectively.

[0013] Preferably, the semiconductor laser array is a laser diode array.

[0014] Preferably, the slab crystal pump unit is double-sided side pumped.

[0015] Preferably, the shape of the lath crystal is trapezoidal, and the lath crystal is a Nd:YAG crystal. The lower base of the Nd:YAG crystal is 61.2 mm, the upper base of the Nd:YAG crystal is 59 mm, the width of the Nd:YAG crystal is 10 mm, the thickness of the Nd:YAG crystal is 2 mm, the bottom angle of the Nd:YAG crystal is 29.2°, the first direction is the height direction of the lath crystal, the second direction is the length direction of the lath crystal, and the first direction is perpendicular to the second direction.

[0016] Preferably, the length of the slab crystal is such that dual-wavelength light can complete an integer number of cycles of oscillation in the slab crystal.

[0017] Preferably, the heat dissipation method of the slat crystal is water cooling.

[0018] Preferably, the first electro-optical Q switch is selected from KD2PO4 crystal.

[0019] Preferably, the second electro-optical Q switch is selected from LiNbO3 crystal.

[0020] Preferably, the first total reflection mirror coating is 0°HR@1064nm, and the first output mirror coating wavelength T=55%@1064nm.

[0021] Preferably, the coating of the second total reflection mirror is 0°HR@1319nm, and the coating wavelength of the second output mirror is T=15%@1319nm&AR@1064nm.

[0022] Compared with the prior art, the present invention can bring at least one of the following beneficial effects:

[0023] 1) The dual-wavelength slab laser of the present application adopts a dual-wavelength oscillation resonant cavity type, and forms two different oscillation periods through dual wavelengths, and the oscillation periods are both integer multiples of the dual-wavelength light, so that the upper energy level particles in the slab crystal are fully extracted.

[0024] 2) The dual-wavelength slab laser of the present application utilizes the advantages of high pump power and high beam quality of the slab laser to achieve maximum power output, so that the laser has more application scenarios, thereby broadening the applicability of the laser.

[0025] 3) The dual-wavelength slab laser of the present application suppresses the oscillation interference of redundant spectral lines by selecting the first electro-optical Q switch from KD2PO4 crystal and the second electro-optical Q switch from LiNbO3 crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The preferred implementation scheme will be described below in a clear and understandable manner with reference to the accompanying drawings to further illustrate the above-mentioned characteristics, technical features, advantages and their implementation methods.

[0027] Figure 1 This is a side view of the dual-wavelength slab laser pumped on one side with a large surface according to Embodiment 1 of the present invention;

[0028] Figure 2 is a top view of the dual-side side pumping of the dual-wavelength slab laser slab crystal of Example 2 of the present invention;

[0029] Figure 3is a top view of a slab crystal of a dual-wavelength slab laser pumped from one side in Example 3 of the present invention;

[0030] Figure 4 is a schematic diagram of the same-path oscillation optical path of the dual-wavelength slab laser according to Embodiment 3 of the present invention;

[0031] Figure 5 It is a schematic diagram of the oscillation optical path of the dual-wavelength slab laser with different cavity lengths in the same path according to Example 4 of the present invention. DETAILED DESCRIPTION

[0032] Various aspects of the present invention are described in further detail below.

[0033] Unless otherwise defined or indicated, all professional and scientific terms used herein have the same meanings as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to those described herein can be applied to the method of the present invention.

[0034] Unless otherwise clearly specified and limited, the "or" mentioned in the present invention includes the relationship of "and". The "and" is equivalent to the Boolean logic operator "AND", the "or" is equivalent to the Boolean logic operator "OR", and "AND" is a subset of "OR".

[0035] It is to be understood that although the terms "first", "second", etc. may be used herein to describe different elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Therefore, the first element may be referred to as the second element without departing from the teachings of the present invention.

[0036] In the present invention, the terms "consisting mainly of" and "consisting of" are included in the terms "containing", "including" or "comprising".

[0037] Unless otherwise clearly specified and limited, the terms "connected", "connected" and "connection" in the present invention should be understood in a broad sense, for example, it can be a fixed connection, or it can be connected through an intermediary medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0038] For example, if an element (or component) is referred to as being on, coupled to, or connected to another element, the element may be directly formed on, coupled to, or connected to the other element, or there may be one or more intervening elements between them. In contrast, if the expressions "directly on," "directly coupled to," and "directly connected to" are used herein, then no intervening elements are indicated. Other words used to describe the relationship between elements should be similarly interpreted, such as "between" and "directly between," "attached" and "directly attached," "adjacent" and "directly adjacent," etc.

[0039] It should also be noted that the words "front", "rear", "left", "right", "upper" and "lower" used in the following description refer to directions in the drawings. The words "inner" and "outer" used refer to directions toward or away from the geometric center of a particular component, respectively. It can be understood that these terms are used here to describe the relationship of one element, layer or region relative to another element, layer or region as shown in the drawings. In addition to the orientations described in the drawings, these terms should also include other orientations of the device.

[0040] Other aspects of the present invention will be apparent to those skilled in the art in view of the disclosure herein.

[0041] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the specific implementation methods of the present invention will be described below with reference to the accompanying drawings. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings and other implementation methods can be obtained based on these drawings without creative work.

[0042] It should also be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present application. The drawings only show the components related to the present application and are not drawn according to the number, shape and size of the components in actual implementation. The type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the component layout may also be more complicated. For example, the thickness of the components in the drawings may be exaggerated for the sake of clarity.

[0043] See attached Figure 1-5 , in a preferred embodiment of the present invention, a dual-wavelength slab laser is provided, the dual-wavelength slab laser comprising a laser resonant cavity unit and a slab crystal pump unit;

[0044] The laser resonant cavity unit comprises: a first optical path, along which a first total reflection mirror 1, a slab crystal 2, a first electro-optical Q switch 3, and a first output mirror 4 are sequentially arranged; a second optical path, along which a second total reflection mirror 5, a slab crystal 2, a second electro-optical Q switch 6, and a second output mirror 7 are sequentially arranged;

[0045] The slab crystal pump unit comprises a semiconductor laser array 9 and an optical waveguide 8; wherein,

[0046] The light apertures of the first electro-optical Q switch 3 and the second electro-optical Q switch 6 are matched to the diameters of the lasers received by the first electro-optical Q switch 3 and the second electro-optical Q switch 6, respectively; the coating center wavelengths of the first total reflection mirror 1 and the first output mirror 4 are the same, and the coating center wavelengths of the second total reflection mirror 5 and the second output mirror 7 are the same; the coating center wavelengths of the first total reflection mirror 1 and the first output mirror 4 and the coating center wavelengths of the second total reflection mirror 5 and the second output mirror 7 correspond to the wavelengths of the two absorption peaks with the largest and second largest absorption cross sections of the slab crystal 2, respectively;

[0047] The shape of the lath crystal 2 is trapezoidal, and the lath crystal 2 is Nd:YAG crystal;

[0048] The laser light of the first optical path and the laser light of the second optical path simultaneously complete oscillation along the first direction and conduction along the second direction in the slab crystal;

[0049] The laser wavelengths output by the dual-wavelength slab laser are 1064 nm and 1319 nm respectively.

[0050] It should be noted that the dual-wavelength slab laser has a simple structure and does not use a large number of redundant optical devices, which reduces the production cost. In addition, the coating center wavelengths of the first total reflection mirror 1 and the first output mirror 4 and the coating center wavelengths of the second total reflection mirror 5 and the second output mirror 7 correspond to the wavelengths of the two absorption peaks with the largest and second largest absorption cross sections of the slab crystal 2, respectively. The wavelengths with the largest and second largest absorption cross sections are selected as the oscillation light wavelengths of the first optical path and the second optical path, and are also used as the coating center wavelengths of the first total reflection mirror 1 and the first output mirror 4 on the first optical path and the second total reflection mirror 5 and the second output mirror 7 on the second optical path. Moreover, the light apertures of the first electro-optical Q switch 3 and the second electro-optical Q switch 6 are matched to the laser diameters received by the first electro-optical Q switch 3 and the second electro-optical Q switch 6, respectively, which is conducive to obtaining the best Q-switching efficiency.

[0051] As a preferred embodiment, the heat dissipation method of the lath crystal 2 is water cooling.

[0052] It should be noted that by adopting a water-cooling cooling method, the pump surface and the cooling surface are separated, simplifying the design of the laser head.

[0053] As a preferred embodiment, the slab crystal pump unit is side-pumped or large-area pumped.

[0054] It should be noted that the large-surface pump injects more energy and is more suitable for high-power solid-state dual-wavelength lasers.

[0055] As a preferred embodiment, the slab crystal pump unit is double-sided side pumped.

[0056] It should be noted that in double-sided side pumping, the pump light is injected from another plane perpendicular to the cooling surface and the laser propagation plane, which increases the absorption length of the pump light and improves the utilization rate.

[0057] As a preferred embodiment, the semiconductor laser array 9 is a laser diode array.

[0058] As a preferred embodiment, the shape of the slab crystal 2 is trapezoidal, the slab crystal 2 is a Nd:YAG crystal, the lower base of the Nd:YAG crystal is 61.2 mm, the upper base of the Nd:YAG crystal is 59 mm, the width of the Nd:YAG crystal is 10 mm, the thickness of the Nd:YAG crystal is 2 mm, the bottom angle of the Nd:YAG crystal is 29.2°, the first direction is the height direction of the slab crystal 2, the second direction is the length direction of the slab crystal 2, and the first direction is perpendicular to the second direction. It should be noted that the first direction is the Z direction, the second direction is the Y direction, and the length of the slab crystal 2 along the Z direction satisfies that the two oscillation wavelengths of the dual-wavelength laser of the first optical path and the second optical path can complete the conduction of a complete number of cycles, and the dual-wavelength laser oscillates in the Y direction of the slab crystal 2.

[0059] As a preferred embodiment, the first electro-optical Q switch 3 is selected from KD2PO4 crystal, and this setting suppresses the light of redundant spectral lines to a certain extent.

[0060] As a preferred embodiment, the second electro-optical Q switch 6 is selected from LiNbO3 crystal, and this setting suppresses the light of redundant spectral lines to a certain extent.

[0061] Example 1

[0062] See attached Figure 1The present invention provides a dual-wavelength slab laser, wherein the slab crystal 2 is a Nd:YAG crystal with a doping concentration of 1% and a trapezoidal shape, the lower base of the Nd:YAG crystal is 61.2 mm, the upper base of the Nd:YAG crystal is 59 mm, the width of the Nd:YAG crystal is 10 mm, the thickness of the Nd:YAG crystal is 2 mm, and the bottom angle of the Nd:YAG crystal is 29.2°. The second electro-optical Q switch 6 is selected from LiNbO3 crystal, which has a much smaller absorption coefficient in the 1319 nm band than that of KD2PO4 crystal. After coating, its transmittance in the 1319 nm band is higher than 98%, and its insertion loss does not exceed 1%, which is more conducive to the oscillation of the 1319 nm laser. The first electro-optical Q switch 3 is selected from KD2PO4 crystal, which has a high electro-optical coefficient and is used for electro-optical Q switching of the 1064 nm laser optical path in this embodiment. A semiconductor laser array 9 is used for single-sided large-surface pumping. After being shaped by the waveguide 8, the spot size is 55mm×9mm, which is evenly irradiated on the large surface of the Nd:YAG crystal. A water-cooling unit is welded to the large surface on the other side opposite to the pump unit. In the optical path of this embodiment, the 1064nm wavelength adopts a straight-through cavity structure along the first optical path, and is oscillated and transmitted through the resonant cavity optical path composed of the first total reflection mirror 1, the slab crystal 2, the first electro-optical Q switch 3, and the first output mirror 4. Since the emission cross-section of the Nd:YAG crystal in the 1064nm band is the largest, the output power of the 1064nm laser is also relatively high. In this embodiment, the 1064nm wavelength light has 4 complete oscillation cycles in the slab crystal 2; the 1319nm laser propagates along the second optical path, through the second total reflection mirror 5, the slab crystal 2, the second electro-optical Q switch 6, and the second output mirror 7. The 1319nm laser is incident on the Nd:YAG crystal at an angle of 46.6° to the slab incident surface, oscillates along the Y axis in the Nd:YAG crystal, and propagates along the Z axis, with 8 complete oscillation cycles.

[0063] Among them, in the Nd:YAG crystal, the oscillation period of the 1319nm wavelength is twice the period of the 1064nm wavelength, and the output power is also improved, further reducing the power difference of the dual-wavelength output power, achieving the purpose of controlling and adjusting the output power ratio of the 1064nm / 1319nm dual-wavelength laser and controlling and adjusting the thresholds of the 1064nm / 1319nm laser to be equal.

[0064] Example 2

[0065] See attached Figure 2The present invention provides a dual-wavelength slab laser. The slab crystal 2 is pumped on both sides by two semiconductor laser arrays 9. After being shaped by the waveguide 8, the spot size is 9mm×1.5mm, which is evenly irradiated on the side of the slab crystal 2. This method has high pumping power density and long absorption distance of double-sided side pumping light, effectively reducing the influence of temperature gradient on the slab crystal, and the output laser beam quality is better. This solution welds water-cooling heat dissipation units on the two major surfaces of the slab crystal for heat dissipation, and the rest is referred to Example 1.

[0066] Example 3

[0067] See attached Figure 3-4 The present invention provides a dual-wavelength slab laser, wherein the slab crystal 2 is a Nd:YAG trapezoidal crystal with a doping concentration of 1% and a bottom angle of 29.2°. The length of the slab crystal 2 satisfies that the dual-wavelength light propagates in the crystal in an integer multiple period, and the heat dissipation of the slab crystal 2 is performed by water cooling. The first electro-optical Q switch 3 and the second electro-optical Q switch 6 are combined into one electro-optical Q switch, and the electro-optical Q switch uses a LiNbO3 crystal, whose transmission wavelengths include 1064nm and 1319nm. Its absorption coefficient for the 1319nm band is much smaller than that of the KD2PO4 crystal. After coating, its transmittance in the 1319nm band is higher than 98%, and its insertion loss does not exceed 1%, which is more conducive to the oscillation of the 1319nm laser and compatible with the 1064nm output. The full reflection mirror and the output mirror can be subjected to dual-wavelength coating to make 1064 and 1319nm oscillate in the same path and output simultaneously. For other parts, refer to Example 1.

[0068] Example 4

[0069] See attached Figure 5 The present invention provides a dual-wavelength slab laser. The slab crystal 2 is a Nd:YAG trapezoidal crystal with a doping concentration of 1% and a bottom angle of 29.2°. The length of the slab crystal 2 satisfies that the dual-wavelength light propagates in the crystal in an integer multiple period. The slab crystal heat dissipation adopts a water cooling method. The first electro-optical Q switch 3 and the second electro-optical Q switch 6 are combined into one electro-optical Q switch. The electro-optical Q switch adopts LiNbO3 crystal, whose transmission wavelength includes 1064nm and 1319nm. The absorption coefficient of the 1319nm band is much smaller than that of the KD2PO4 crystal. After coating, its transmittance in the 1319nm band is higher than 98%, and its insertion loss does not exceed 1%, which is more conducive to the oscillation of the 1319nm laser and compatible with the 1064nm output. The first total reflection mirror 1 is coated with 0°HR@1064nm, the first output mirror 4 is coated with a wavelength of T=55%@1064nm, the second total reflection mirror 5 is coated with 0°HR@1319nm, and the second output mirror 7 is coated with a wavelength of T=15%@1319nm&AR@1064nm. The 1064nm and 1319nm laser wavelengths of this solution are different, which is conducive to adjusting the power of the two wavelength output lasers separately.

[0070] Based on this application, it should be understood by those skilled in the art that one aspect described herein can be implemented independently of any other aspect, and two or more of these aspects can be combined in various ways. For example, any number and aspect described herein can be used to implement the device and / or practice the method. In addition, other structures and / or functionalities other than one or more of the aspects described herein can be used to implement this device and / or practice this method.

[0071] It should be noted that the above embodiments can be freely combined as needed. The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered as the protection scope of the present invention.

[0072] All documents mentioned in the present invention are cited as references in this application, just as each document is cited as reference separately. In addition, it should be understood that after reading the above content of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the claims attached to this application.

Claims

1. A dual-wavelength slab laser, characterized in that: The dual-wavelength slab laser comprises a laser resonant cavity unit and a slab crystal pump unit; The laser resonant cavity unit comprises: a first optical path, along which a first total reflection mirror, a slab crystal, a first electro-optical Q switch, and a first output mirror are sequentially arranged; a second optical path, along which a second total reflection mirror, a slab crystal, a second electro-optical Q switch, and a second output mirror are sequentially arranged; The slab crystal pump unit is side-pumped or large-surface pumped, and the slab crystal pump unit includes a semiconductor laser array and an optical waveguide; wherein, The light apertures of the first electro-optical Q switch and the second electro-optical Q switch are matched to the diameters of the lasers received by the first electro-optical Q switch and the second electro-optical Q switch respectively; the coating center wavelengths of the first total reflection mirror and the first output mirror are the same, and the coating center wavelengths of the second total reflection mirror and the second output mirror are the same; the coating center wavelengths of the first total reflection mirror and the first output mirror and the coating center wavelengths of the second total reflection mirror and the second output mirror respectively correspond to the wavelengths of the two absorption peaks with the largest and second largest absorption cross sections of the slab crystal; The shape of the lath crystal is trapezoidal, the lath crystal is Nd:YAG crystal, and the base angle of the Nd:YAG crystal is 29.2°; The laser light of the first optical path and the laser light of the second optical path simultaneously complete oscillation along the first direction and conduction along the second direction in the slab crystal, and the length of the slab crystal satisfies that the dual-wavelength light can complete an integer cycle of oscillation in the slab crystal; The laser wavelengths output by the dual-wavelength slab laser are 1064 nm and 1319 nm respectively.

2. A dual-wavelength slab laser according to claim 1, characterized in that: The semiconductor laser array is a laser diode array.

3. A dual-wavelength slab laser according to claim 1, characterized in that: The slab crystal pump unit is double-sided side pumped.

4. A dual-wavelength slab laser according to claim 1, characterized in that: The shape of the lath crystal is trapezoidal, and the lath crystal is a Nd:YAG crystal. The lower base of the Nd:YAG crystal is 61.2 mm, the upper base of the Nd:YAG crystal is 59 mm, the width of the Nd:YAG crystal is 10 mm, and the thickness of the Nd:YAG crystal is 2 mm. The first direction is the height direction of the lath crystal, and the second direction is the length direction of the lath crystal. The first direction is perpendicular to the second direction.

5. A dual-wavelength slab laser according to claim 4, characterized in that: The heat dissipation method of the slat crystal is water cooling.

6. A dual-wavelength slab laser according to claim 5, characterized in that: The first electro-optical Q switch is selected from KD2PO4 crystal.

7. A dual-wavelength slab laser according to claim 6, characterized in that: The second electro-optical Q switch is selected from LiNbO3 crystal.

8. A dual-wavelength slab laser according to claim 4, characterized in that: The first total reflection mirror coating is 0°HR@1064nm, and the first output mirror coating wavelength is T=55%@1064nm.

9. A dual-wavelength slab laser according to claim 4, characterized in that: The coating of the second total reflection mirror is 0°HR@1319nm, and the coating wavelength of the second output mirror is T=15%@1319nm&AR@1064nm.

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