Method and device for removing material by utilizing Bezier beam

Abstract

The invention discloses a method and device for removing materials by utilizing a Bessel beam, and the method comprises the steps that a laser processing unit outputs a non-diffraction Bessel beam, the spot diameter is 10-100 microns, and the non-diffraction distance of the Bessel beam is 15-300 millimeters; the material clamping assembly is used for clamping a material to be cut; the Bessel beam is controlled to enable the formed filiform light spot to be located at the machining position of the cutting plane, the laser power is controlled to cut the material in an ablation removal mode to form a cutting channel, the Bessel beam and the to-be-cut material are controlled to move relative to each other, the filiform light spot moves and is fed relative to the cutting path, and laser cutting is achieved. According to the method, the Bessel beam is used, the mode of ablative removal from the surface is adopted, materials are directly cut and separated, thick materials can be cut, the cutting loss is reduced, and the machining efficiency is remarkably improved.

Description

Technical Field

[0001] The invention relates to a laser material processing method, in particular to a material processing method using a Bessel beam, in particular to a processing method using a material removal method, and a device for implementing the method. Background Art

[0002] The cutting of brittle and hard materials has always been the focus of research in the field of material processing, especially when the workpiece has a certain thickness, the cutting is more difficult. The development of semiconductor material technology has brought new challenges to the cutting of brittle and hard materials. Silicon is the representative of the first generation of semiconductor materials. However, facing the specific needs of the optoelectronic field and high-frequency and high-power applications, the performance limitations of silicon-based materials have gradually emerged, prompting the industry to turn to the use of second-generation semiconductors such as gallium arsenide (GaAs) and indium phosphide (InP) and third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) as substrates for core devices, especially in cutting-edge fields such as optical communications. In addition, diamond and gallium oxide, as representatives of the fourth generation of ultra-wide bandgap semiconductor materials, are becoming research hotspots and cutting-edge directions. The application of these materials brings huge challenges to processing.

[0003] In the field of material processing, the cutting of brittle and hard materials has traditionally relied on mechanical means such as circular band saws and diamond wire saws. However, when faced with extremely brittle materials such as silicon carbide (SiC) and diamond with a Mohs hardness of more than 9, these traditional methods seem to be inadequate. The high hardness and high brittleness of SiC and diamond not only require the use of expensive diamond as a cutting medium, but are also accompanied by significant cutting losses. At the same time, cutting takes a long time. It takes more than 80 hours to cut an 8-inch silicon carbide ingot with diamond wire. To solve this problem, laser cutting technology has emerged as an innovative solution.

[0004] Conventional laser cutting uses a Gaussian laser beam. Due to the large cone angle of the Gaussian beam, if the thickness of the piece to be cut is large, it will cause a large cutting loss in the cross section. For example, a Gaussian laser is used to cut and separate directly from the side of the ingot. For an ingot with a diameter greater than 4 inches (100 mm), the cutting loss is expected to be greater than 2 mm. Such a large loss is unacceptable for processing companies. Therefore, in the prior art, the laser cutting technology used does not use direct material removal to cut semiconductor ingots, but instead injects the laser from a direction perpendicular to the surface to be cut, so that the laser beam is focused on the surface to be cut, and the surface to be cut is modified, and then cracked and separated by heating, mechanical or chemical methods. Usually, starting from the upper surface of the semiconductor ingot, the modification, heating and cracking are carried out layer by layer, and the wafer is separated by bonding film, and the cutting loss can be controlled at about 0.1~0.3 mm. However, after this process, the upper surface of the ingot needs to be re-ground and polished due to the influence of the modified layer in order to carry out the next layer of modification, otherwise the laser will be difficult to penetrate.

[0005] In order to save time for grinding and polishing the upper surface of the ingot after each layer is peeled off, Chinese invention patent application CN115083896 A proposes a method of performing multi-layer modification on the wafer ingot from bottom to top, and then peeling the wafer from the wafer ingot by vacuum adsorption. The actual difficulty of this method during use is how to make each focus modification point on the same plane. If it is not on the same plane, on the one hand, separation is difficult and cracks appear, and on the other hand, the modified layer has a large width, resulting in a subsequent grinding loss of each cross section of about 45μm.

[0006] In addition, some studies have proposed other methods, such as splitting the silicon carbide ingot in half and performing a cyclic operation to reduce slicing loss and speed up processing time; dividing the processing surface inside the ingot into multiple areas, and using a laser beam to process multiple areas in turn to form a modified layer, etc.

[0007] However, the general solution of the existing technology is that the laser beam is incident from the main surface of the ingot (close to perpendicular to the surface to be cut) to form a modified layer, and then cracking. However, the modified separation layer is usually thick, and it needs to be separated by external force later, which will lead to a decrease in the yield rate.

[0008] Compared with the traditional Gaussian beam, the Bessel beam has the characteristic of long-distance non-diffraction and has been publicly used for cutting ultra-thick glass. It is particularly suitable for so-called hidden cutting. For example, Chinese invention patent application CN 118145881 A discloses a method for cutting ultra-thick crystal glass, which first allows the Gaussian laser beam to pass through the Bessel laser cutting head and then be shaped into a Bessel laser beam, and then allows the Bessel laser beam to penetrate the glass and focus on the lower surface of the glass into a high-energy-density filamentary light spot, and then the glass is cut layer by layer. During the entire cutting process, this method always limits the opaque area formed by cutting the glass to the lower end of the glass, avoiding the phenomenon that the laser cutting beam cannot penetrate the opaque area, thereby improving the efficiency and quality of glass cutting, wherein the length of the filamentary light spot ranges from 10mm to 13mm, and the diameter is usually 4 microns. Chinese invention patent CN 114178712 B provides a laser cutting optical system and method, which adopts a combination system of a single-axis scanning mirror group, a fixed mirror group, a focusing mirror group, a flat-field focusing mirror group and an optical wedge. The optical wedge folds the light beam and focuses it on the upper surface of the glass plate. The single-axis scanning mirror group rotates and scans, and the focused light spot moves from the upper surface of the glass plate to the lower surface along the z direction. At the same time, the focusing mirror group is controlled to move along the reference optical axis to form a focused light spot scanning line inside the glass plate. The glass plate can be cut by moving the glass plate, and the cutting thickness can reach tens of mm.

[0009] After several years of efforts, Bessel beams are increasingly used for cutting transparent materials such as glass. However, the existing Bessel cutting is achieved by breaking the chemical bonds of the material through a surface with good light transmittance, relying on extremely high power (high peak power) and energy density, and there is no material removal process during the cutting process. Therefore, this method requires extremely high power density and energy density, and the incident surface of the material requires a very high transmittance. At the same time, due to the use of the above-mentioned cutting principle, the prior art believes that when used for laser cutting, it is necessary to control the diameter of the focused filamentary light spot. For example, it is generally believed that it needs to be no more than 5 microns, but this also limits the length of the filamentary light spot. This is also the reason why CN 118145881 A developed a layer-by-layer cutting method.

[0010] Therefore, when laser cutting brittle and hard materials, if a processing method can be found that can cut larger thicknesses (for example, greater than 20 mm) while not having special requirements for the light transmittance of the material, it will be of great significance for the cutting of new semiconductor materials. Summary of the invention

[0011] The object of the present invention is to provide a method for material removal using a Bessel beam, which does not require splitting and has no special requirements on the transmittance of the cutting surface, so as to be used for cutting brittle and hard materials with a large thickness.

[0012] Another object of the present invention is to provide a device for removing materials using a Bessel beam to implement the above method.

[0013] In order to achieve the above-mentioned object of the invention, the technical solution adopted by the present invention is: a method for removing material using a Bessel beam, comprising the following steps: (1) providing a laser processing unit, wherein the laser processing unit outputs a non-diffraction Bessel beam, wherein the spot diameter of the filamentary spot formed by focusing the Bessel beam is 10 to 100 microns, and the non-diffraction distance of the Bessel beam is 15 to 300 millimeters; (2) providing a material clamping assembly, wherein the material clamping assembly clamps the material to be cut; (3) controlling the Bessel beam so that the filamentary spot formed is located at the processing position of the cutting plane, controlling the laser power to cut the material by ablative removal to form a cutting path, and controlling the relative movement of the Bessel beam and the material to be cut so that the filamentary spot moves and feeds relative to the cutting path to achieve laser cutting; (4) The mechanical claw is used to grab the cutting blade and the remaining material to be cut respectively, and the cutting blade that has been cut and separated is taken away. The remaining material to be cut is fixed by the material clamping component again, and the mechanical claw is withdrawn. Steps (3)-(4) are repeated for the next cutting until the cutting of the material to be cut is completed.

[0014] In the prior art, Bessel beam cutting is only used as a pre-separation method, and mechanical splitting, laser beam thermal strain splitting, ultrasonic splitting, chemical agent splitting, etc. are used to separate materials later. The present invention breaks through the existing mindset and uses Bessel beams to directly ablate and remove materials to achieve cutting. At the same time, the prior art is limited by the idea that the spot diameter needs to be no greater than 5 microns, making it difficult to achieve cutting of thicker materials. The present invention, while changing the modified splitting to the material removal principle, can use a larger diameter spot, thereby obtaining a larger non-diffraction distance, which can be used for cutting thicker materials without forming a conical incision.

[0015] In the above technical solution, in conjunction with ablation removal, an air blowing device may be provided to blow air at the processing position to remove solid and liquid particles generated by ablation.

[0016] In a further technical solution, the angle between the Bessel beam and the material surface at the cutting position is α, α is less than 80°, so that the projection shape of the Bessel beam at the cutting position is elliptical, the waist radius of the Bessel beam is w, and the major axis of its elliptical projection is greater than 2.03w. This oblique incidence method can, on the one hand, make the spot elliptical, increase the spot area, and improve the material removal efficiency. On the other hand, it can also cooperate with the attached blowing device to more easily blow away the liquid and small particles generated by ablation near the processing position, thereby increasing the processing speed.

[0017] In a preferred technical solution, the material to be cut is cylindrical, the cutting plane is a plane perpendicular to the cylindrical axis of symmetry; the material clamping assembly has a degree of freedom of rotation that allows the material to be cut to rotate about the cylindrical axis of symmetry; the filamentary light spot is fed inward from the outer periphery of the cylinder; in step (3), the rotation speed of the material to be cut and the feeding speed of the filamentary light spot are controlled respectively to complete laser cutting. The above technical solution is particularly suitable for separation of semiconductor ingots.

[0018] A further technical solution is to set up at least two of the laser processing units, and the Bessel light beams output by each laser processing unit are respectively located in different circumferential directions of the cutting plane; each laser processing unit cuts different positions of the same cutting plane, or each laser processing unit cuts different cutting planes respectively, to achieve simultaneous separation of multiple cutting pieces.

[0019] Preferably, three laser processing units are provided, and the Bessel light beams output by the laser processing units are evenly distributed along the circumference of the cutting plane.

[0020] In a preferred technical solution, in step (1), the diameter of the filamentary spot formed by focusing the Bessel beam is 30 to 100 microns, and the non-diffraction distance of the Bessel beam is 50 to 300 mm. In a more preferred solution, the diameter of the spot is 50 to 100 microns, and the non-diffraction distance is 100 to 200 mm.

[0021] In the above technical solution, in step (1), the laser processing unit includes a laser and a Bessel component, the laser outputs a Gaussian beam, and the non-diffraction Bessel beam is obtained after conversion by the Bessel component. The spot diameter of the Bessel beam is related to the waist radius of the initial Gaussian beam output by the laser and various parameters of the combined axicon.

[0022] To achieve another inventive object of the present invention, a device for removing materials using a Bessel beam is provided, comprising a laser processing unit, a control unit and a clamping and moving unit, wherein the control unit is connected to control the laser processing unit and the clamping and moving unit, the clamping and moving unit clamps the material to be cut and provides translation in the XYZ directions and rotation of the material to be cut, the laser processing unit comprises a laser and a Bessel component, the laser outputs a Gaussian beam, and the non-diffraction Bessel beam is obtained through conversion by the Bessel component, the spot diameter of the filamentary spot formed by focusing the Bessel beam is 10 to 100 microns, and the non-diffraction distance of the Bessel beam is 15 to 300 mm.

[0023] In a preferred technical solution, the diameter of the filamentary spot formed by focusing the Bessel beam is 30-100 microns, and the non-diffraction distance of the Bessel beam is 50-300 mm. In a more preferred solution, the diameter of the spot is 50-100 microns, and the non-diffraction distance is 100-200 mm.

[0024] In the above technical solution, the Bessel component includes a combined axicon for controlling the light field and generating a diffraction-free Bessel beam; a focusing lens group is provided in the exit direction of the Bessel beam for controlling the diameter and focal depth of the Bessel beam; the combined axicon is a combined axicon of the same material and different cone bottom angles, or a combined axicon of the same cone bottom angle and different materials.

[0025] In the focusing lens group, the focal length of lens one is f1, and the focal length of lens two is f2.

[0026] When the combined axicon is a combination of the same material and different cone bottom angles, where the axicon material refractive index is n, and the cone bottom angles are γ1 and γ2 respectively, the diffraction-free distance Zmax1 of the generated Bessel beam is w0 / [(n-1)*(γ1-γ2)], and after being focused by the focusing lens group, the diffraction-free distance Z'max1 is Zmax1*β. β is the scaling factor after being focused by the focusing lens group.

[0027] When the combined axicon is a combination of the same cone base angle and different materials, wherein the refractive indices of the axicon materials are n1 and n2 respectively, and the cone base angle is γ, the diffraction-free distance Zmax1 of the generated Bessel beam is w0 / [(n1-n2)*γ], and after being focused by the focusing lens group, the diffraction-free distance Z'max1 is Zmax2*β.

[0028] No matter which combination of axicons is used, the waist radius of the non-diffracting Bessel beam after focusing is w0*β.

[0029] A further technical solution is provided with a workpiece processing unit, including a motor and a mechanical claw. The mechanical claw is used to remove the cutting disc and fix the remaining material body each time the laser cutting is completed, and withdraw the mechanical claw after the clamping rotating device fixes the remaining body again.

[0030] A further technical solution is to provide three laser processing units, wherein the Bessel light beams output by each laser processing unit are respectively located in different circumferential directions of the cutting plane and are evenly distributed along the circumference of the cutting plane.

[0031] Due to the application of the above technical solution, the present invention has the following advantages compared with the prior art: 1. In the prior art, when Bessel beams are used to cut and separate thicker materials, they are all invisible cutting methods, and subsequent splitting is required, which is a cumbersome operation; the present invention uses Bessel beams to ablate and remove materials from the surface to directly cut and separate the materials. The present invention uses Bessel beams with long diffraction distances for material removal and cutting, which is not available in the prior art.

[0032] 2. The non-diffraction distance of the Bessel light beam of the present invention is 15 to 300 mm, preferably 50 to 300 mm, which can easily realize the cutting of thicker materials. By adopting the material removal method, the cutting width is less than 0.1 mm under the premise that the spot diameter is one order of magnitude larger than the prior art, which can reduce cutting loss and improve processing efficiency and precision.

[0033] 3. The present invention is particularly suitable for separating semiconductor ingots. It adopts a cutting method in which a long-distance non-diffraction Bessel light beam is incident from the side of the ingot. Compared with the Gaussian spot, there is no processing cone angle, which reduces material loss. Compared with laser modification separation, the separation layer width is smaller, and the next slicing can be carried out directly after separation without re-grinding and polishing, which significantly improves processing efficiency. In addition, there is no need to introduce a separation device, and the operation is extremely simple.

[0034] 4. The present invention tilts the Bessel beam to a certain angle, so that the heat action area is wider while ensuring the laser energy, achieving a higher volume removal efficiency and making it easier to remove the solid and liquid particles generated by ablation. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 Schematic diagram of the structure of a device for removing material using a Bessel beam in an embodiment of the present invention.

[0036] Figure 2 It is a schematic diagram of the Bessel beam generation principle of the present invention.

[0037] Figure 3 Schematic diagram of the first combined axicon in the embodiment.

[0038] Figure 4 Schematic diagram of the second combined axicon in the embodiment.

[0039] Figure 5 Schematic diagram of the structure of the clamping moving unit in the embodiment.

[0040] Figure 6 Schematic diagram of the Bessel beam incident mode for cutting a semiconductor ingot in an embodiment of the present invention.

[0041] Figure 7 This is a schematic diagram of the cutting spot comparison.

[0042] Figure 8 It is a schematic diagram of the layout of the laser processing unit in another embodiment of the present invention.

[0043] Among them: 1. Control unit; 2. Laser processing unit; 3. Clamping and moving unit; 4. Workpiece processing unit; 5. Material to be cut; 6. Bessel beam; 21. Laser; 22. Bessel processing head; 211. Combined axicon; 212. Focusing lens group; 2111. Positive axicon; 2112. Negative axicon; 31. Clamping and rotating device; 32. XYZ three-way moving device DETAILED DESCRIPTION

[0044] The present invention will be further described below in conjunction with the accompanying drawings and embodiments: Embodiment 1: Figure 1 As shown, a device for removing materials using a Bessel beam includes: a control unit 1, a laser processing unit 2 for cutting materials, a clamping and moving unit 3 for fixing and moving materials, and a workpiece processing unit 4.

[0045] The clamping and moving unit 3 comprises a clamping and rotating device 31 and an XYZ three-way moving device 32 for clamping and driving the material to be cut.

[0046] Figure 2 The laser processing unit 2 includes a laser 21 and a Bessel processing head 22. The Bessel processing head 22 has a combined axicon 211 and a focusing lens group 212.

[0047] In this embodiment, the average power of the laser 21 is 50W, the wavelength of the output laser beam is 1064nm, the laser beam output by the laser 21 is pulsed output, the output pulse width is 50ps, the repetition frequency is 500kHz, the single pulse energy is 100μJ, the output beam is a Gaussian beam, and the beam waist radius w0 is 10mm.

[0048] See also Figure 3 In this embodiment, the combined axicon 211 uses a combined axicon with the same cone bottom angle and different materials. Among them, the refractive index n1 of the material of the positive axicon 2111 is 1.545, and the refractive index n2 of the material of the negative axicon 2112 is 1.534, then the equivalent refractive index n1-n2+1 is 1.011; and the cone bottom angles of the positive and negative axicons are both 0.5°. In the focusing lens group 212, the focal length f1 of the first lens is 130 mm, and the focal length f2 of the second lens is 5 mm.

[0049] In this embodiment, the waist radius of the Bessel light beam obtained by combining the axicon is 15 μm (the diameter of the formed light spot is slightly larger than 30 μm), and the diffraction-free distance is 154 mm.

[0050] See also Figure 5 , which is a schematic diagram of the structure of the clamping and rotating device 31. The clamping and rotating device 31 is used to drive the material to be cut to move and rotate, and is combined with the XYZ three-way moving device to realize the movement of the light spot relative to the material to be cut along a preset trajectory.

[0051] In addition, a solution of adding a three-dimensional moving device to the laser processing unit can also be adopted to achieve relative movement between the light spot and the material to be cut, so as to realize laser cutting.

[0052] The apparatus of this embodiment is used to cut a 12-inch silicon carbide semiconductor ingot having a thickness of 1 cm.

[0053] The Bessel laser beam is used to incident on the semiconductor ingot from the side, such as Figure 6 shown.

[0054] A galvanometer can be set on the Bessel processing head 22, and the incident angle α (the intersection angle of the tangent line of the laser beam and the incident point on the surface of the ingot) can be adjusted to 40° through the galvanometer. The XYZ three-dimensional movement of the material to be processed can be achieved through the clamping moving unit to adjust the cutting position to ensure that the cutting thickness meets the requirements. The rotation angular velocity is set to 0.5 rad / s. As the material to be processed rotates, the laser removes the material, thereby separating the wafer from the ingot. After all the wafers are cut and separated, the wafers are uniformly ground, polished, and other subsequent operations are performed, and the flatness is tested to meet the requirements.

[0055] Due to the incident angle α, the projection shape of the Bessel beam at the cut is an ellipse. Figure 7 As shown, on the cutting plane, the light spot projection formed by vertical incidence is circular as shown on the left, while the projection shape formed in this embodiment is an ellipse as shown on the right. Embodiment 2

[0056] Cut a 4-inch diamond semiconductor ingot with a thickness of 2 mm.

[0057] The average power of the laser 21 is 50 W, the wavelength of the output laser beam is 532 nm, the laser beam output by the laser 21 is pulsed output, the output pulse width is 5 ns, the repetition frequency is 100 kHz, and the single pulse energy is 500 μJ.

[0058] The beam waist radius w0 of the Gaussian beam output by the laser 21 is 10 mm.

[0059] In this embodiment, Figure 4 As shown, the combined axicon mirror uses a combined axicon made of the same material but with different cone bottom angles, wherein the refractive index n of the positive and negative axicon materials is 1.436, the cone bottom angle γ1 of the positive axicon 2111 is 5°, and the cone bottom angle γ2 of the negative axicon 2112 is 4.9°.

[0060] The focal lengths of the two lenses in the focusing lens group are: f1 is 80mm, and f2 is 5mm.

[0061] The resulting Bessel beam has a waist radius of 39 μm and a diffraction-free distance of 51 mm.

[0062] The Bessel laser beam is used to incident the semiconductor ingot from the side, and the incident angle α (the intersection angle of the tangent line between the laser beam and the incident point on the surface of the ingot) is adjusted to 30° through the galvanometer. The ingot is moved by the clamping moving unit XYZ three-way movement to ensure that the cutting thickness meets the requirements. The rotation angular velocity is set to 0.2 rad / s. As the material to be cut rotates, the laser removes the material, thereby separating the wafer from the ingot. After all the wafers are cut and separated, the wafers are uniformly ground, polished and other subsequent operations are performed, and the flatness meets the requirements. Embodiment 3

[0063] To speed up the processing, three laser processing units are set up. Figure 8 As shown in FIG. 1 , it is a schematic diagram of the incident direction of the Bessel beam. The material 5 to be cut is a cylindrical ingot. Observed from one end of the ingot, it can be seen that the Bessel beams 6 output by the three laser processing units are respectively irradiated at different circumferential positions of the cutting plane, with an angle of 120° between each other. For each Bessel beam, the angle between its irradiation direction and the material surface at the cutting processing position is α, which is less than 80°.

[0064] The three laser processing units in this embodiment can process the same cutting plane at the same time, increasing the processing speed by nearly 3 times. They can also process different cutting planes at different intervals, so that three slices can be obtained in one processing.

Claims

1. A method for material removal using a Bessel beam, characterized in that: The following steps are involved: (1) providing a laser processing unit, wherein the laser processing unit outputs a non-diffraction Bessel beam, wherein the spot diameter of the filamentary spot formed by focusing the Bessel beam is 10 to 100 microns, and the non-diffraction distance of the Bessel beam is 15 to 300 millimeters; (2) providing a material clamping assembly, wherein the material clamping assembly clamps the material to be cut; (3) controlling the Bessel beam so that the filamentary spot formed is located at the processing position of the cutting plane, controlling the laser power to cut the material by ablative removal to form a cutting path, and controlling the relative movement of the Bessel beam and the material to be cut so that the filamentary spot moves and feeds relative to the cutting path to achieve laser cutting; (4) The mechanical claw is used to grab the cutting blade and the remaining material to be cut respectively, and the cutting blade that has been cut and separated is taken away. The remaining material to be cut is fixed by the material clamping component again, and the mechanical claw is withdrawn. Steps (3)-(4) are repeated for the next cutting until the cutting of the material to be cut is completed.

2. The method for material removal using Bessel beam according to claim 1, characterized in that: The angle between the Bessel beam and the material surface at the cutting position is α, which is less than 80°, so that the projection shape of the Bessel beam at the cutting position is elliptical, the waist radius of the Bessel beam is w, and the major axis of its elliptical projection is greater than 2.03w.

3. The method for material removal using Bessel beam according to claim 1, characterized in that: The material to be cut is cylindrical, and the cutting plane is a plane perpendicular to the cylindrical axis of symmetry; the material clamping assembly has a degree of freedom of rotation that allows the material to be cut to rotate around the cylindrical axis of symmetry; the filamentary light spot is fed inward from the outer periphery of the cylinder; in step (3), the rotation speed of the material to be cut and the feed speed of the filamentary light spot are controlled respectively to complete laser cutting.

4. The method for material removal using Bessel beam according to claim 3, characterized in that: At least two of the laser processing units are arranged, and the Bessel beams output by each laser processing unit are respectively located in different circumferential directions of the cutting plane; each laser processing unit cuts different positions of the same cutting plane, or each laser processing unit cuts different cutting planes respectively, so as to realize simultaneous separation of multiple cutting pieces; preferably, three of the laser processing units are arranged, and the Bessel beams output by each laser processing unit are uniformly distributed along the circumference of the cutting plane.

5. The method for material removal using Bessel beam according to claim 1, characterized in that: In step (1), the spot diameter of the filamentary spot formed by focusing the Bessel light beam is 30 to 100 microns, and the non-diffraction distance of the Bessel light beam is 50 to 300 millimeters.

6. The method for material removal using Bessel beam according to any one of claims 1 to 5, characterized in that: In step (1), the laser processing unit includes a laser and a Bessel component. The laser outputs a Gaussian beam, which is converted by the Bessel component to obtain the non-diffraction Bessel beam.

7. A device for material removal using a Bessel beam, comprising a laser processing unit, a control unit and a clamping and moving unit, wherein the control unit is connected to control the laser processing unit and the clamping and moving unit, and the clamping and moving unit clamps the material to be cut and provides translation in the XYZ direction and rotation of the material to be cut, characterized in that: The laser processing unit includes a laser and a Bessel component. The laser outputs a Gaussian beam, which is converted by the Bessel component to obtain the non-diffraction Bessel beam. The spot diameter of the filamentary spot formed by focusing the Bessel beam is 10 to 100 microns, and the non-diffraction distance of the Bessel beam is 15 to 300 millimeters.

8. The device for removing material using Bessel beam according to claim 7, characterized in that: The Bessel component includes a combined axicon mirror, which is used to control the light field and generate a non-diffraction Bessel light beam; a focusing lens group is provided in the exit direction of the Bessel light beam, which is used to control the diameter and focal depth of the Bessel light beam; the combined axicon mirror is a combined axicon of the same material and different cone bottom angles, or a combined axicon of the same cone bottom angle and different materials.

9. The device for removing material using Bessel beam according to claim 7, characterized in that: A workpiece processing unit is provided, including a motor and a mechanical claw. The mechanical claw is used to remove the cutting disc and fix the remaining material body each time the laser cutting is completed, and withdraw the mechanical claw after the clamping rotating device fixes the remaining body again.

10. The device for removing material using Bessel beam according to claim 7, characterized in that: Three laser processing units are provided, and the Bessel beams output by each laser processing unit are respectively located in different circumferential directions of the cutting plane and are evenly distributed along the circumference of the cutting plane.

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