Lens assembly and modulation method thereof, camera module and electronic equipment

Abstract

The invention discloses a lens assembly and a modulation method thereof, a camera module and electronic equipment, and belongs to the technical field of electronic equipment, the lens assembly comprises a waveguide layer, a semiconductor layer and an oxide layer assembly, and the semiconductor layer is arranged on one side of the waveguide layer. The oxide layer assembly comprises insulating layers and a conductive oxide layer, semiconductor layers are arranged on the two sides of the oxide layer assembly, and the insulating layers are arranged on the two sides of the conductive oxide layer. When the voltage difference between the semiconductor layer and the conductive oxide layer changes, the dielectric constant of the conductive oxide layer also changes.

Description

Technical Field

[0001] The present application belongs to the technical field of electronic equipment, and specifically relates to a lens assembly and a modulation method thereof, a camera module and an electronic equipment. Background Art

[0002] Currently, the lenses on mobile phones are all fixed-focus lenses. The way they achieve focusing is to use a voice coil motor to move the lens, changing the distance between the lens and the image sensor, thereby achieving focus at different object distances.

[0003] The current focusing method is phase focus (Phase Detection Auto Focus, PDAF). The advantage of phase focus is fast focusing speed, but its disadvantage is low focusing accuracy and often has errors, namely PD offset (Phase Detection offset). This problem is particularly obvious on telephoto lenses. The main reason is that the telephoto zoom ratio is large, and the inaccurate defects of phase focus are magnified, which easily causes blurred images.

[0004] Metalenses can be used to adjust the focal length to achieve precise focusing. However, current metalenses have the defect of slow response speed and cannot meet the needs of fast focusing on mobile phones. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a lens assembly and its modulation method, device, camera module and electronic equipment, which improve the response speed of the lens assembly and achieve fast focusing.

[0006] In a first aspect, an embodiment of the present application provides a lens assembly, comprising:

[0007] waveguide layer;

[0008] A semiconductor layer, wherein the semiconductor layer is disposed on one side of the waveguide layer;

[0009] An oxide layer assembly, the oxide layer assembly comprising an insulating layer and a conductive oxide layer, semiconductor layers are provided on both sides of the oxide layer assembly, and insulating layers are provided on both sides of the conductive oxide layer;

[0010] When the voltage difference between the semiconductor layer and the conductive oxide layer changes, the dielectric constant of the conductive oxide layer also changes.

[0011] In a second aspect, an embodiment of the present application provides a camera module, including:

[0012] A lens assembly as in the first aspect.

[0013] In a third aspect, an embodiment of the present application provides an electronic device, including:

[0014] Such as the camera module in the second aspect.

[0015] In a fourth aspect, an embodiment of the present application provides a modulation method of a lens assembly, which is used for the lens assembly in the first aspect, and the modulation method includes:

[0016] applying a voltage to the semiconductor layer;

[0017] Adjusting the voltage difference between the semiconductor layer and the conductive oxide layer so that the lens assembly focuses at different focal lengths to obtain a corresponding relationship between the focal length and the voltage of the lens assembly;

[0018] Among them, the dielectric constant of the conductive oxide layer is related to the voltage difference between the semiconductor layer and the conductive oxide layer.

[0019] In a fifth aspect, an embodiment of the present application provides a modulation device of a lens assembly, which is performed by a modulation device, and the modulation device includes:

[0020] A control module, used for applying voltage to the semiconductor layer;

[0021] The control module is also used to: adjust the voltage difference between the semiconductor layer and the conductive oxide layer so that the lens assembly focuses at different focal lengths to obtain a corresponding relationship between the focal length and voltage of the lens assembly;

[0022] Among them, the dielectric constant of the conductive oxide layer is related to the voltage difference between the semiconductor layer and the conductive oxide layer.

[0023] In a sixth aspect, an embodiment of the present application provides an electronic device, comprising a processor and a memory, wherein the memory stores programs or instructions that can be executed on the processor, and when the programs or instructions are executed by the processor, the steps of the method in the fourth aspect are implemented.

[0024] In a seventh aspect, an embodiment of the present application provides a readable storage medium, on which a program or instruction is stored, and when the program or instruction is executed by a processor, the steps of the method in the fourth aspect are implemented.

[0025] In an eighth aspect, an embodiment of the present application provides a chip, comprising a processor and a communication interface, wherein the communication interface is coupled to the processor, and the processor is used to run programs or instructions to implement the steps of the method of the fourth aspect.

[0026] In a ninth aspect, an embodiment of the present application provides a computer program product, which is stored in a storage medium and is executed by at least one processor to implement the method of the fourth aspect.

[0027] In the embodiment of the present application, when different voltages are applied to the semiconductor layer, the voltage difference between the semiconductor layer and the conductive oxide layer will change, and when the voltage difference is different, the dielectric constant of the conductive oxide layer is also different. The change in the dielectric constant of the conductive oxide layer will cause the entire lens assembly to have different phase responses to the incident light, thereby achieving focusing at different focal lengths, and obtaining the relationship between the focal length and the voltage. Focusing at different focal lengths is achieved by controlling the voltage applied to the lens assembly at this position to change the dielectric constant of the conductive oxide layer. When there is a focusing error in the phase focusing of the electronic device, the focal length of the lens is adjusted by applying a voltage to achieve precise focusing.

[0028] Compared with the mechanical zoom, liquid crystal zoom, and phase change material zoom lens assemblies in the related art, this embodiment uses a semiconductor structure combined with a dielectric constant material to realize a new zoom lens assembly. The response speed can reach microseconds, which is higher than the response speed of the zoom lens assembly in the related art, meeting the demand for fast focusing of electronic equipment. In addition, the volume of the lens assembly in this embodiment is much smaller than the lens on the electronic equipment in the related art, and the integration is higher, which can optimize the internal space of the electronic equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A schematic diagram of the structure of a lens assembly provided by some embodiments of the present application is shown;

[0030] Figure 2 A schematic block diagram of a semiconductor layer, an insulating layer, and a conductive oxide layer provided by some embodiments of the present application is shown;

[0031] Figure 3 A schematic block diagram of a semiconductor layer, an insulating layer, and a conductive oxide layer provided by some embodiments of the present application is shown;

[0032] Figure 4 A schematic block diagram of a semiconductor layer, an insulating layer, and a conductive oxide layer provided by some embodiments of the present application is shown;

[0033] Figure 5 A schematic diagram of the structure of a lens assembly provided by some embodiments of the present application is shown;

[0034] Figure 6 A schematic diagram of the structure of a lens assembly provided by some embodiments of the present application is shown;

[0035] Figure 7 A graph showing the dielectric constant of the oxide conductive layer provided by some embodiments of the present application as a function of applied voltage is shown;

[0036] Figure 8 A focusing effect diagram of a lens assembly provided in some embodiments of the present application at a focal length of 40 μm is shown;

[0037] Fig. 9 A focusing effect diagram of a lens assembly provided in some embodiments of the present application at a focal length of 60 μm is shown;

[0038] Fig.10 A focusing effect diagram of a lens assembly provided in some embodiments of the present application at a focal length of 80 μm is shown;

[0039] Fig.11 A flow chart showing a modulation method of a lens assembly provided by some embodiments of the present application;

[0040] Fig.12 A schematic block diagram of a modulation device of a lens assembly provided in some embodiments of the present application is shown;

[0041] Fig.13 A structural block diagram of an electronic device provided according to an embodiment of the present application is shown;

[0042] Fig.14 A schematic diagram of the hardware structure of an electronic device provided in some embodiments of the present application is shown.

[0043] Figures 1 to 6 The reference numerals in the figures are as follows:

[0044] 100 lens component, 110 waveguide layer, 120 semiconductor layer, 130 oxide layer component, 131 insulating layer, 132 conductive oxide layer, 140 dielectric layer. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the present application belong to the scope of protection of this application.

[0046] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the terms used in this way are interchangeable where appropriate, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0047] The following is combined with Figures 1 to 14, the lens assembly and its modulation method, device, camera module and electronic device provided in the embodiments of the present application are described in detail through specific embodiments and their application scenarios.

[0048] Combination Figure 1 , Figure 2 and Figure 3 As shown, in some embodiments of the present application, a lens assembly 100 is provided, comprising: a waveguide layer 110, a semiconductor layer 120 and an oxide layer assembly 130, wherein the semiconductor layer 120 is disposed on one side of the waveguide layer 110. The oxide layer assembly 130 comprises an insulating layer 131 and a conductive oxide layer 132, wherein the semiconductor layer 120 is disposed on both sides of the oxide layer assembly 130, and the insulating layer 131 is disposed on both sides of the conductive oxide layer 132. The semiconductor layer 120 is used to be applied with a voltage V, and the conductive oxide layer 132 is used to be grounded, and when the voltage difference between the semiconductor layer 120 and the conductive oxide layer 132 changes, the dielectric constant of the conductive oxide layer 132 also changes.

[0049] Two semiconductor layers 120 are arranged on one side of the waveguide layer 110, an oxide layer assembly 130 is arranged between the two semiconductor layers 120, and in the oxide layer assembly 130, a conductive oxide layer 132 is arranged between two insulating layers 131, the upper and lower semiconductor layers 120 are used to be applied with a positive voltage, and the conductive oxide layer 132 is used for grounding.

[0050] The waveguide layer 110 can achieve precise control and focusing of light waves, and control the propagation direction and mode of the light waves.

[0051] In this embodiment, the structure of "insulating layer 131-conductive oxide layer 132-insulating layer 131" is integrated in the semiconductor layer 120. According to the semiconductor principle, the semiconductor layer 120, the insulating layer 131 and the conductive oxide layer 132 can form a "semiconductor-insulator-semiconductor" structure. At this time, when a positive or negative bias voltage is applied between the semiconductor layer 120 and the conductive oxide layer 132, free carriers will form an accumulation layer or a depletion layer at the bottom and top interfaces of the conductive oxide layer 132.

[0052] The dielectric constant of the conductive oxide layer 132 can be quantitatively described by the classic Drude model: Where ω is the angular frequency of the electromagnetic wave, ∈ ∞ is the high frequency dielectric constant of the conductive oxide layer 132, ω ρ and γ are the plasma resonance frequency and damping resonance frequency of the conductive oxide layer 132, respectively, and i represents an imaginary unit. ρ It is proportional to the carrier concentration N. Therefore, the change of the carrier concentration N of the conductive oxide layer 132 will cause its dielectric constant to change. The relationship between the change of the dielectric constant of the conductive oxide layer 132 and the applied voltage is as follows: Figure 7 shown.

[0053] from Figure 7 It can be seen that when different voltages are applied to the semiconductor layer 120, the dielectric constant of the conductive oxide layer 132 is different. The change in the dielectric constant of the conductive oxide layer 132 will cause the entire lens assembly 100 to have different phase responses to the incident light, thereby achieving focusing at different focal lengths, and obtaining the relationship between the focal length and the voltage. Figure 7 The figure shows the variation trend of the imaginary and real parts of the dielectric constant with voltage. The essence of focusing is to make the phase distribution of the incident light wave satisfy the following formula after passing through the device:

[0054]

[0055] In the formula, represents the phase modulation amount, λ is the wavelength of the incident electromagnetic wave, is the distance between the lens assembly 100 and the center of the metasurface, (x, y) is the coordinate point of the lens assembly 100 in the plane coordinate system established with the center of the lens assembly 100 as the origin, and F is the focal length of the metasurface to achieve focusing. According to this formula, the amount of phase modulation that the lens assembly 100 at different (x, y) positions needs to provide to the incident light can be determined to achieve zoom focusing. Therefore, focusing at different focal lengths can be achieved by controlling the voltage applied to the lens assembly 100 at that position to change the dielectric constant of the conductive oxide layer 132. When there is a focusing error in the phase focusing of the electronic device, the focal length of the lens can be adjusted by applying a voltage to achieve precise focusing.

[0056] According to the above focusing phase distribution formula, the focusing effect of lens components with different focal lengths is achieved by controlling the applied voltage. Figure 8 The focus effect is shown at a focal length of 40μm. Fig. 9 The focus effect is shown at a focal length of 60μm. Fig.10 The focusing effect at a focal length of 80 μm is shown.

[0057] Compared with the related art, the lens assembly 100 in this embodiment can achieve zoom and correct the phase focusing error of the large-bottom telephoto module. Compared with the lens assembly 100 of mechanical zoom, liquid crystal material zoom, and phase change material zoom in the related art, this embodiment adopts a semiconductor structure combined with a near-zero dielectric constant material to realize a new zoom lens assembly 100. The response speed can reach microseconds, which is higher than the response speed of the zoom lens assembly 100 in the related art, meeting the needs of fast focusing of electronic equipment. In addition, the volume of the lens assembly 100 in this embodiment is much smaller than the lens on the electronic device in the related art, and the integration is higher, which can optimize the internal space of the electronic device.

[0058] By adjusting the focal length of the lens assembly 100, the error of traditional phase focusing can be compensated, so that a clean picture can be obtained each time focusing, solving the problem of inaccurate focusing of large-bottom and long-focus projects. At the same time, this embodiment is combined with a micro-nano optical structure, has a high degree of integration, and the response speed can reach microseconds.

[0059] The zoom lens assembly 100 capable of correcting phase focusing errors in this embodiment has a small size and a high degree of integration. After optimization, the focusing effect may exceed the diffraction limit and has a high resolution in practical applications.

[0060] Combination Figure 1 , Figure 4 and Figure 6 As shown, in some embodiments, optionally, the number of layers of the oxide layer component 130 is at least one layer. In the case where the number of layers of the oxide layer component 130 is multiple layers, at least two layers of the oxide layer component 130 are arranged along the thickness direction of the semiconductor layer ( Figure 5 The arrow at A in the figure points to a stack, and semiconductor layers 120 are disposed on both sides of any oxide layer component 130.

[0061] Compared with the single-layer oxide layer component 130 , the multi-layer oxide layer component 130 has a larger focal length modulation range, thereby optimizing the focal length modulation effect.

[0062] Semiconductor layers are disposed on both sides of each oxide layer component 130 , so that a voltage difference can be formed between the semiconductor layer 120 and the conductive oxide layer 132 .

[0063] like Figure 3 As shown, in some embodiments, optionally, there are multiple oxide layer components 130 , and the multiple oxide layer components 130 are distributed in an array on one side of the waveguide layer 110 .

[0064] In this embodiment, a plurality of oxide layer components 130 are arrayed on one side of the waveguide layer 110, that is, after a single oxide layer component 130 is periodically arrayed on one side of the waveguide layer 110, a complete variable focus lens component 100 is formed. Compared with setting a large oxide layer component 130 on one side of the waveguide layer 110, the method of arraying a plurality of oxide layer components 130 in this embodiment improves the manufacturability of the lens component 100.

[0065] In some embodiments, the conductive oxide layer 132 may optionally include: indium tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, or fluorine-doped tin oxide.

[0066] Indium tin oxide is doped, and has high electrical conductivity and good light transmittance, making it a good material for transparent electrodes. Using indium tin oxide as the material in the conductive oxide layer 132 can prevent the light transmittance of the lens assembly 100 from being affected, and the dielectric constant of indium tin oxide can change rapidly with the change of voltage, thereby achieving a fast focusing function.

[0067] Aluminum-doped zinc oxide, gallium-doped zinc oxide and fluorine-doped tin oxide also have good light transmittance and electrical conductivity and can be used as alternative materials to indium tin oxide.

[0068] Of course, in other embodiments, the conductive oxide layer 132 is not limited to the above materials, as long as it can achieve the same function as in this embodiment.

[0069] In some embodiments, optionally, along Figure 5 The arrow at B in the middle points to the semiconductor layer 120 and the oxide layer assembly 130. The cross-sectional shapes of the semiconductor layer 120 and the oxide layer assembly 130 are the same, and the cross-sectional shapes include: cross-shaped, rectangular or circular. The shapes of the semiconductor layer 120 and the oxide layer assembly 130 are related to the working wavelength, that is, when the working wavelength of the lens assembly is different, the shapes of the semiconductor layer 120 and the oxide layer assembly 130 are also different. Therefore, the shape of the lens assembly can be adjusted according to the working wavelength of the lens assembly, which is conducive to optimizing the light focusing effect of the lens assembly.

[0070] like Figure 1 As shown, in some embodiments, optionally, the lens assembly 100 further includes: a dielectric layer 140 , which is disposed on the other side of the waveguide layer 110 , and the refractive index of the dielectric layer 140 is lower than the refractive index of the waveguide layer 110 .

[0071] The material of the dielectric layer 140 is a low refractive index material such as silicon dioxide, titanium dioxide, silicon nitride, etc., and the thickness is generally several hundred nanometers or several micrometers.

[0072] The dielectric layer 140 is a material layer in the lens assembly 100 used to control light propagation, and can achieve precise control of the phase distribution of light, thereby achieving functions such as focusing and imaging.

[0073] Combination Figure 1 and Figure 5 As shown, in some embodiments, optionally, the thickness W1 of the waveguide layer 110 satisfies that the value range of W1 is 200nm≤W1≤1000nm, the thickness of the semiconductor layer 120 is W2, the value range of W2 is 100nm≤W2≤1000nm, the thickness of the insulating layer 131 is W3, the value range of W3 is 5nm≤W3≤50nm, and the thickness of the conductive oxide layer 132 is W4, the value range of W4 is 5nm≤W4≤50nm.

[0074] In the case of different working wavelengths, the size parameters of each layer in the lens assembly 100 are usually different. In this embodiment, the size of each layer in the lens assembly 100 is set for a single wavelength and a narrow fast band, such as 1550nm as the working wavelength.

[0075] The material of the waveguide layer 110 is generally silicon, and the thickness is generally 200nm to 1000nm. The semiconductor layer 120 in this embodiment is a semiconductor nanocolumn, and the material is doped silicon, and the thickness is generally 400nm to 2000nm. The material of the insulating layer 131 is an insulating material, generally aluminum oxide, and the thickness is generally 5nm to 50nm. The conductive oxide layer 132 is doped indium tin oxide, and the thickness is generally 5nm to 50nm. The insulating layer 131-conductive oxide layer 132-insulating layer 131 is integrated in the semiconductor nanocolumn, dividing the semiconductor nanocolumn into upper and lower layers of nanocolumns. The specific period, thickness of each layer and other dimensional parameters of the lens assembly 100 are related to its operating wavelength. When the above-mentioned size range is met, it is beneficial to improve the focusing effect of the lens.

[0076] In other embodiments, when the operating wavelength is different, the size parameters of each layer in the lens assembly 100 will also be different.

[0077] In an embodiment of the present application, a camera module is proposed, which includes a lens assembly in any of the above embodiments and can achieve the same technical effect, which will not be repeated here.

[0078] In an embodiment of the present application, an electronic device is proposed, which includes the camera module in the above embodiment and can achieve the same technical effect, which will not be repeated here.

[0079] In some embodiments of the present application, a modulation method of a lens assembly is provided, which is applied to the lens assembly in any of the above embodiments. The modulation method of the lens assembly is performed by a modulation device. Fig.11 A flow chart of a modulation method provided in some embodiments of the present application is shown, such as Fig.11 As shown, the modulation method includes:

[0080] Step 202, a modulation device applies a voltage to the semiconductor layer;

[0081] Step 204, the modulation device adjusts the voltage difference between the semiconductor layer and the conductive oxide layer so that the lens assembly is focused at different focal lengths, and obtains a corresponding relationship between the focal length and voltage of the lens assembly, wherein when the voltage difference between the semiconductor layer and the conductive oxide layer changes, the dielectric constant of the conductive oxide layer also changes.

[0082] In an embodiment of the present application, focusing at different focal lengths is achieved by controlling the voltage applied to the lens assembly at that position to change the dielectric constant of the conductive oxide layer. When there is a focusing error in the phase focusing of the electronic device, the focal length of the lens is adjusted by applying voltage to achieve precise focusing.

[0083] Compared with the related art, the lens assembly in this embodiment can achieve zoom and correct the phase focus error of the large-bottom telephoto module. Compared with the lens assemblies of mechanical zoom, liquid crystal material zoom, and phase change material zoom in the related art, this embodiment adopts a combination of semiconductor structure and near-zero dielectric constant material to realize a new zoom lens assembly. The response speed can reach microseconds, which is higher than the response speed of the zoom lens assembly in the related art, meeting the needs of fast focusing of electronic equipment. In addition, the volume of the lens assembly in this embodiment is much smaller than the lens on the electronic equipment in the related art, and the integration is higher, which improves the space utilization inside the electronic equipment.

[0084] Exemplarily, the modulation device includes a voltage applying device, which applies voltage to the semiconductor layer, and the modulation device also includes a computer, which is used to adjust the voltage difference and record the corresponding relationship between the focal length of the lens assembly and the voltage.

[0085] In some embodiments, the lens assembly is used in a camera module, and the modulation method also includes: obtaining the phase focus error of the camera module; determining a corrected focal length based on the phase focus error, and the corrected focal length is used to correct the phase focus error; and determining a corrected voltage difference corresponding to the corrected focal length based on the correspondence between the focal length and the voltage difference of the lens assembly.

[0086] During the whole machine focus calibration test, the phase focus test is performed by pushing the voice coil motor multiple times to obtain the phase focus error when the voice coil motor is in different positions. After obtaining the focal length that needs to be corrected, according to the correspondence between the focal length and the voltage in the above embodiment, the correction voltage difference required to correct the focus error can be known, thereby obtaining the correspondence between the phase focus error and the correction voltage difference, and recording this correction voltage difference in the module storage device. When the user uses the camera to take pictures, the phase focus error is compensated by applying this voltage to the lens assembly, so that the focus picture is clear.

[0087] The modulation device also includes a focus calibration device, which performs a phase focus test by pushing the voice coil motor multiple times.

[0088] In some embodiments, before the step of applying voltage to the semiconductor layer, the modulation method also includes: adjusting the size parameters and period length of the lens component according to the operating wavelength of the lens component; when the variation range of the dielectric constant is within the reference range, updating the size parameters of the lens component to the component size corresponding to the operating wavelength, and updating the period length of the lens component to the component period length corresponding to the operating wavelength.

[0089] According to the working wavelength, the size parameters and cycle length of the lens assembly are initially optimized and determined. The size parameters include the thickness of the dielectric layer and waveguide layer, the length, width and height of the semiconductor, the thickness of the insulator and the conductive oxide layer, etc., so that the light of the desired wavelength will resonate when passing through the lens assembly. By adjusting the size parameters of the lens assembly, it is beneficial to optimize the light focusing effect of the lens assembly.

[0090] In this embodiment, the reference range can be a range where the dielectric constant changes from a positive value to a negative value, or from a negative value to a positive value. Figure 7 As shown, when the initial value of the dielectric constant is 4, the reference range is 4 to -1, or 4 to -2, etc.

[0091] The modulation method provided in the embodiment of the present application can be performed by a modulation device. In the embodiment of the present application, the modulation method provided in the embodiment of the present application is described by taking the modulation device performing the modulation method as an example.

[0092] In some embodiments of the present application, a modulation device of a lens assembly is provided, which is applied to the lens assembly in any of the above embodiments. Fig.12 Schematic block diagram of a modulation device provided in some embodiments of the present application is shown. Fig.12 As shown, the modulation device 300 includes:

[0093] A control module 302, used for applying a voltage to the semiconductor layer;

[0094] The control module 302 is also used to adjust the voltage difference between the semiconductor layer and the conductive oxide layer so that the lens assembly can focus at different focal lengths to obtain a corresponding relationship between the focal length and voltage of the lens assembly, wherein when the voltage difference between the semiconductor layer and the conductive oxide layer changes, the dielectric constant of the conductive oxide layer also changes.

[0095] In an embodiment of the present application, focusing at different focal lengths is achieved by controlling the voltage applied to the lens assembly at that position to change the dielectric constant of the conductive oxide layer. When there is a focusing error in the phase focusing of the electronic device, the focal length of the lens is adjusted by applying voltage to achieve precise focusing.

[0096] Compared with the related art, the lens assembly in this embodiment can achieve zoom and correct the phase focusing error of the large-bottom telephoto module. Compared with the lens assemblies of mechanical zoom, liquid crystal material zoom, and phase change material zoom in the related art, this embodiment uses a semiconductor structure combined with a near-zero dielectric constant material to realize a new zoom lens assembly. The response speed can reach microseconds, which is higher than the response speed of the zoom lens assembly in the related art, meeting the needs of fast focusing of electronic equipment. In addition, the volume of the lens assembly in this embodiment is much smaller than the lens on the electronic device in the related art, and the integration is higher, which can optimize the internal space of the electronic device.

[0097] In some embodiments of the present application, the lens assembly is used in a camera module, and the control module is also used to: obtain the phase focus error of the camera module; determine a corrected focal length based on the phase focus error, and the corrected focal length is used to correct the phase focus error; determine a corrected voltage difference corresponding to the corrected focal length based on the correspondence between the focal length and the voltage difference of the lens assembly.

[0098] In some embodiments of the present application, the control module is also used to: before the step of applying voltage to the semiconductor layer, the control module is also used to: adjust the size parameters and period length of the lens component according to the operating wavelength of the lens component; when the variation range of the dielectric constant is within the reference range, update the size parameters of the lens component to the component size corresponding to the operating wavelength, and update the period length of the lens component to the component period length corresponding to the operating wavelength.

[0099] The modulation device in the embodiment of the present application can be an electronic device, or a component in the electronic device, such as an integrated circuit or a chip. The electronic device can be a terminal, or other devices other than a terminal. Exemplarily, the electronic device can be a mobile phone, a tablet computer, a laptop computer, a PDA, a vehicle-mounted electronic device, a mobile Internet device (Mobile Internet Device, MID), an augmented reality (augmented reality, AR) / virtual reality (virtual reality, VR) device, a robot, a wearable device, an ultra-mobile personal computer (ultra-mobile personal computer, UMPC), a netbook or a personal digital assistant (personal digital assistant, PDA), etc., and can also be a server, a network attached storage (Network Attached Storage, NAS), a personal computer (personal computer, PC), a television (television, TV), a teller machine or a self-service machine, etc., which is not specifically limited in the embodiment of the present application.

[0100] The modulation device in the embodiment of the present application may be a device having an operating system. The operating system may be an Android operating system, an iOS operating system, or other possible operating systems, which are not specifically limited in the embodiment of the present application.

[0101] The modulation device provided in the embodiment of the present application can implement each process implemented in the above method embodiment, and will not be described again here to avoid repetition.

[0102] Optionally, an embodiment of the present application further provides an electronic device, which includes a modulation device as in any of the above embodiments, and thus has all the beneficial effects of the modulation device in any of the embodiments, which will not be elaborated herein.

[0103] Optionally, an embodiment of the present application further provides an electronic device, Fig.13 A structural block diagram of an electronic device according to an embodiment of the present application is shown. Fig.13 As shown, the electronic device 400 includes a processor 402, a memory 404, and a program or instruction stored in the memory 404 and executable on the processor 402. When the program or instruction is executed by the processor 402, each process of the above-mentioned modulation method embodiment is implemented, and the same technical effect can be achieved. To avoid repetition, it will not be described here.

[0104] It should be noted that the electronic devices in the embodiments of the present application include the above-mentioned mobile electronic devices and non-mobile electronic devices.

[0105] Fig.14 A schematic diagram of the hardware structure of an electronic device to implement an embodiment of the present application.

[0106] The electronic device 500 includes but is not limited to: a radio frequency unit 501, a network module 502, an audio output unit 503, an input unit 504, a sensor 505, a display unit 506, a user input unit 507, an interface unit 508, a memory 509, a processor 510, a camera 511 and other components, wherein the camera 511 includes a waveguide layer 110, a semiconductor layer 120, an oxide layer assembly 130, and a dielectric layer 140.

[0107] Those skilled in the art will appreciate that the electronic device 500 may also include a power source (such as a battery) for supplying power to various components, and the power source may be logically connected to the processor 510 through a power management system, thereby implementing functions such as managing charging, discharging, and power consumption management through the power management system. Fig.14 The electronic device structure shown in the figure does not constitute a limitation on the electronic device. The electronic device may include more or fewer components than shown in the figure, or combine certain components, or arrange the components differently, which will not be described in detail here.

[0108] Among them, the processor 510 is used to apply voltage to the semiconductor layer; adjust the voltage difference between the semiconductor layer and the conductive oxide layer so that the lens assembly can focus at different focal lengths, and obtain the corresponding relationship between the focal length and voltage of the lens assembly; wherein, when the voltage difference between the semiconductor layer and the conductive oxide layer changes, the dielectric constant of the conductive oxide layer also changes.

[0109] In the embodiment of the present application, the embodiment adopts a semiconductor structure combined with a near-zero dielectric constant material to realize a new zoom lens assembly. The response speed can reach microseconds, which is higher than the response speed of the zoom lens assembly in the related art, and meets the demand for fast focusing of electronic equipment. In addition, the volume of the lens assembly in this embodiment is much smaller than the lens on the electronic equipment in the related art, and the integration is higher, which can optimize the internal space of the electronic equipment.

[0110] Furthermore, the processor 510 is also used to: obtain the phase focus error of the camera module; determine the corrected focal length based on the phase focus error; and determine the corrected voltage difference corresponding to the corrected focal length based on the correspondence between the focal length of the lens assembly and the voltage difference.

[0111] After obtaining the focal length that needs to be corrected, according to the corresponding relationship between the focal length and the voltage in the above embodiment, the correction voltage difference required to correct the focus error can be known, thereby obtaining the corresponding relationship between the phase focus error and the correction voltage difference, and recording this correction voltage difference in the module storage device. When the user uses the camera to take pictures, this voltage is called to compensate for the phase focus error to make the focused picture clear.

[0112] Furthermore, the processor 510 is also used to: before the step of applying voltage to the semiconductor layer, adjust the size parameters and period length of the lens component according to the operating wavelength of the lens component; when the variation range of the dielectric constant is within the reference range, update the size parameters of the lens component to the component size corresponding to the operating wavelength, and update the period length of the lens component to the component period length corresponding to the operating wavelength.

[0113] In the embodiment of the present application, by adjusting the size parameters of the lens assembly, it is helpful to optimize the light focusing effect of the lens assembly.

[0114] It should be understood that in the embodiment of the present application, the input unit 504 may include a graphics processor (GPU) 5041 and a microphone 5042, and the graphics processor 5041 processes the image data of the static picture or action file obtained by the image capture device (such as a camera) in the action file capture mode or the image capture mode. The display unit 506 may include a display panel 5061, and the display panel 5061 may be configured in the form of a liquid crystal display, an organic light emitting diode, etc. The user input unit 507 includes a touch panel 5071 and at least one of other input devices 5072. The touch panel 5071 is also called a touch screen. The touch panel 5071 may include two parts: a touch detection device and a touch controller. Other input devices 5072 may include, but are not limited to, a physical keyboard, function keys (such as volume control keys, switch keys, etc.), a trackball, a mouse, and a joystick, which will not be repeated here.

[0115] The memory 509 can be used to store software programs and various data. The memory 509 may mainly include a first storage area for storing programs or instructions and a second storage area for storing data, wherein the first storage area may store an operating system, an application program or instructions required for at least one function (such as a sound playback function, an image playback function, etc.), etc. In addition, the memory 509 may include a volatile memory or a non-volatile memory, or the memory 509 may include both volatile and non-volatile memories. Among them, the non-volatile memory may be a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), or a flash memory. The volatile memory may be a random access memory (RAM), a static random access memory (SRAM), a dynamic random access memory (DRAM), a synchronous dynamic random access memory (SDRAM), a double data rate synchronous dynamic random access memory (DDRSDRAM), an enhanced synchronous dynamic random access memory (ESDRAM), a synchronous link dynamic random access memory (SLDRAM) and a direct memory bus random access memory (DRRAM). The memory 509 in the embodiment of the present application includes but is not limited to these and any other suitable types of memory.

[0116] The processor 510 may include one or more processing units; optionally, the processor 510 integrates an application processor and a modem processor, wherein the application processor mainly processes operations related to an operating system, a user interface, and application programs, and the modem processor mainly processes wireless communication signals, such as a baseband processor. It is understandable that the modem processor may not be integrated into the processor 510.

[0117] An embodiment of the present application also provides a readable storage medium, on which a program or instruction is stored. When the program or instruction is executed by a processor, the various processes of the above-mentioned method embodiment are implemented and the same technical effect can be achieved. To avoid repetition, it will not be repeated here.

[0118] The processor is the processor in the electronic device in the above embodiment. The readable storage medium includes a computer readable storage medium, such as a computer read-only memory ROM, a random access memory RAM, a magnetic disk or an optical disk.

[0119] An embodiment of the present application further provides a chip, which includes a processor and a communication interface, wherein the communication interface and the processor are coupled, and the processor is used to run programs or instructions to implement the various processes of the above-mentioned modulation method embodiment, and can achieve the same technical effect. To avoid repetition, it will not be repeated here.

[0120] It should be understood that the chip mentioned in the embodiments of the present application can also be called a system-level chip, a system chip, a chip system or a system-on-chip chip, etc.

[0121] An embodiment of the present application provides a computer program product, which is stored in a storage medium. The program product is executed by at least one processor to implement the various processes of the above-mentioned modulation method embodiment and can achieve the same technical effect. To avoid repetition, it will not be repeated here.

[0122] It should be noted that, in this article, the term "comprises", "includes" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, device, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, device, article or device. In the absence of further restrictions, an element defined by the statement "including one..." does not exclude the presence of other identical elements in the process, device, article or device including the element. In addition, it should be noted that the scope of the devices and apparatuses in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in reverse order according to the functions involved, for example, the described device may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0123] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above-mentioned embodiment device can be implemented by means of software plus a necessary general hardware platform, and of course it can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, can be embodied in the form of a computer software product, which is stored in a storage medium (such as ROM / RAM, disk, CD), including a number of instructions for a terminal (which can be a mobile phone, computer, server, or network equipment, etc.) to execute the device of each embodiment of the present application.

[0124] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A lens assembly, characterized in that: include: waveguide layer; a semiconductor layer, wherein the semiconductor layer is disposed on one side of the waveguide layer; An oxide layer assembly, the oxide layer assembly comprising an insulating layer and a conductive oxide layer, semiconductor layers are provided on both sides of the oxide layer assembly, and insulating layers are provided on both sides of the conductive oxide layer; Wherein, when the voltage difference between the semiconductor layer and the conductive oxide layer changes, the dielectric constant of the conductive oxide layer also changes.

2. The lens assembly according to claim 1, characterized in that The number of layers of the oxide layer component is at least one. When the number of layers of the oxide layer component is at least two, at least two layers of the oxide layer components are stacked along the thickness direction of the semiconductor layer, and the semiconductor layers are provided on both sides of any oxide layer component.

3. The lens assembly according to claim 1, characterized in that The number of the oxide layer components is at least two, and at least two of the oxide layer components are distributed in an array on one side of the waveguide layer.

4. The lens assembly according to any one of claims 1 to 3, characterized in that: The conductive oxide layer includes: indium tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide or fluorine-doped tin oxide.

5. The lens assembly according to any one of claims 1 to 3, characterized in that: The semiconductor layer and the oxide layer assembly have the same cross-sectional shape, which includes: a cross, a rectangle or a circle.

6. The lens assembly according to any one of claims 1 to 3, characterized in that: The lens assembly further comprises: A dielectric layer is disposed on the other side of the waveguide layer, and a refractive index of the dielectric layer is lower than a refractive index of the waveguide layer.

7. The lens assembly according to any one of claims 1 to 3, characterized in that: The thickness of the waveguide layer is W1, and the value range of W1 is 200nm≤W1≤1000nm; The thickness of the semiconductor layer is W2, and the value range of W2 is 100nm≤W2≤1000nm; The thickness of the insulating layer is W3, and the value range of W3 is 5nm≤W3≤50nm; The thickness of the conductive oxide layer is W4, and the value range of W4 is 5nm≤W4≤50nm.

8. A camera module, characterized in that: A lens assembly comprising the lens assembly of any one of claims 1 to 7.

9. An electronic device, characterized in that: Comprising the camera module as described in claim 8.

10. A method for modulating a lens assembly, for modulating the lens assembly according to any one of claims 1 to 7, characterized in that: The modulation method comprises: applying a voltage to the semiconductor layer; Adjusting the voltage difference between the semiconductor layer and the conductive oxide layer to make the lens assembly focus at different focal lengths, and obtaining a corresponding relationship between the focal length of the lens assembly and the voltage; Wherein, when the voltage difference between the semiconductor layer and the conductive oxide layer changes, the dielectric constant of the conductive oxide layer also changes.

11. The modulation method according to claim 10, characterized in that: The lens assembly is used in a camera module, and the modulation method further includes: Obtaining a phase focusing error of the camera module; Determine a corrected focal length according to the phase focusing error, wherein the corrected focal length is used to correct the phase focusing error; According to the corresponding relationship between the focal length of the lens assembly and the voltage difference, a corrected voltage difference corresponding to the corrected focal length is determined.

12. The modulation method according to claim 10, characterized in that: Before applying voltage to the semiconductor layer, the modulation method further comprises: According to the working wavelength of the lens assembly, the size parameters and the period length of the lens assembly are adjusted; When the dielectric constant variation range is within the reference range, the size parameters of the lens assembly are updated to the assembly size corresponding to the working wavelength, and the period length of the lens assembly is updated to the assembly period length corresponding to the working wavelength.

13. An electronic device, characterized in that: include: A processor and a memory, wherein the memory stores a program or instruction that can be run on the processor, and when the program or instruction is executed by the processor, the steps of the method according to any one of claims 10 to 12 are implemented.

Images