Auxiliary graphic correction method, device, medium and product

Abstract

The application provides an auxiliary pattern correction method, device, medium and product. The method comprises the following steps: determining at least one target edge in an initial layout according to the pattern properties of each pattern in the initial layout; taking a first edge as a reference to construct an identification area, the first edge being any one of the at least one target edge; adding an initial auxiliary pattern between the main pattern and the first edge in the case that the main pattern exists in the identification area; judging whether the initial auxiliary pattern meets a preset mask manufacturing rule; if not, correcting the initial auxiliary pattern according to the preset mask manufacturing rule to obtain a target auxiliary pattern. The embodiments of the application can improve the correction effect of the auxiliary pattern.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to an auxiliary pattern correction method, apparatus, medium, and product. Background Technology

[0002] Driven by Moore's Law, the semiconductor industry is moving towards increasingly smaller feature sizes, posing unprecedented challenges to photolithography processes, particularly the growing pressure on both pattern resolution and process stability. To address these challenges, Sub-Resolution Assist Feature (SRAF) technology has emerged as a key means to improve lithography resolution and enhance process windows. However, in practical applications, existing technologies lack sufficient adaptability and flexibility in the correction of assisted patterns, making it difficult to achieve ideal correction effects in complex and variable lithography environments. This affects the final pattern resolution and process stability, resulting in poor assisted pattern correction performance in existing technologies. Summary of the Invention

[0003] This application provides an auxiliary graphic correction method, device, medium, and product that can improve the correction effect of auxiliary graphics.

[0004] In a first aspect, embodiments of this application provide an auxiliary graphic correction method, the method comprising:

[0005] Based on the graphic attributes of each graphic in the initial layout, determine at least one target edge in the initial layout;

[0006] A recognition region is constructed based on the first edge, where the first edge is any one of the at least one target edge;

[0007] If a main graphic exists in the identification area, an initial auxiliary graphic is added between the main graphic and the first side;

[0008] Determine whether the initial auxiliary pattern conforms to the preset mask manufacturing rules;

[0009] If not, the initial auxiliary pattern is modified according to the preset mask manufacturing rules to obtain the target auxiliary pattern.

[0010] Secondly, this application provides an auxiliary graphic correction device, the device comprising:

[0011] The determination module is used to determine at least one target edge in the initial layout based on the graphic attributes of each graphic in the initial layout;

[0012] The construction module is used to construct a recognition region based on a first edge, wherein the first edge is any one of the at least one target edge;

[0013] An addition module is used to add an initial auxiliary graphic between the main graphic and the first side when a main graphic exists in the recognition area;

[0014] The judgment module is used to determine whether the initial auxiliary pattern conforms to the preset mask manufacturing rules;

[0015] The correction module is used to correct the initial auxiliary pattern according to the preset mask manufacturing rules if the condition is not met, so as to obtain the target auxiliary pattern.

[0016] Thirdly, embodiments of this application provide an electronic device, which includes: a processor and a memory storing computer program instructions;

[0017] When the processor executes computer program instructions, it implements the auxiliary graphics correction method as described in any of the embodiments of the first aspect.

[0018] Fourthly, embodiments of this application provide a computer storage medium storing computer program instructions, which, when executed by a processor, implement the auxiliary graphics correction method as described in any of the embodiments of the first aspect.

[0019] Fifthly, embodiments of this application provide a computer program product in which instructions, when executed by a processor of an electronic device, cause the electronic device to perform an auxiliary graphics correction method as described in any of the embodiments of the first aspect above.

[0020] In the auxiliary pattern correction method, apparatus, medium, and product provided in this application embodiment, the target edge for placing the auxiliary pattern is first identified and selected based on the graphic attributes of each graphic in the initial layout, ensuring that the layout of the auxiliary pattern can accurately match the lithography requirements. Subsequently, by constructing an identification region, the main graphic region requiring enhancement is accurately located. When the main graphic is identified in the identification region, an initial auxiliary graphic is added between the main graphic and the first edge. This step fully considers the physical effects during the lithography process, improving the rationality of the auxiliary pattern design. Crucially, this application introduces a rule compliance check and adaptive correction mechanism for the initial auxiliary graphic. Once it is found that the initial graphic does not meet the stringent requirements of mask manufacturing, it is finely adjusted according to preset rules, thereby ensuring that the final generated target auxiliary graphic not only conforms to the process specifications but also fully exerts its expected role in improving resolution and enhancing process stability during the lithography process. This significant improvement in flexibility and adaptability allows the corrected auxiliary graphic to achieve a more ideal correction effect in complex lithography environments, thereby greatly improving lithography resolution and the stability of the process window, thus enhancing the correction effect of the auxiliary graphic. Attached Figure Description

[0021] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a flowchart illustrating an auxiliary graphic correction method provided in one embodiment of this application;

[0023] Figure 2 This is one of the schematic diagrams illustrating the principle of an auxiliary graphic correction method provided in an embodiment of this application;

[0024] Figure 3 This is a second schematic diagram illustrating the principle of an auxiliary graphic correction method provided in one embodiment of this application;

[0025] Figure 4 This is the third schematic diagram illustrating the principle of an auxiliary graphic correction method provided in one embodiment of this application;

[0026] Figure 5 This is the fourth schematic diagram illustrating the principle of an auxiliary graphic correction method provided in one embodiment of this application;

[0027] Figure 6 This is a schematic diagram of the structure of an auxiliary graphic correction device provided in an embodiment of this application;

[0028] Figure 7 This is a schematic diagram of the structure of the electronic device provided in the embodiments of this application. Detailed Implementation

[0029] To better understand the above-mentioned objectives, features, and advantages of this disclosure, the solutions disclosed herein will be further described below. It should be noted that, unless otherwise specified, the embodiments and features described herein can be combined with each other.

[0030] Numerous specific details are set forth in the following description in order to provide a full understanding of this disclosure, but this disclosure may also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only some, and not all, of the embodiments of this disclosure.

[0031] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the term "comprising" or any other variations thereof is intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes the element.

[0032] Driven by Moore's Law, the semiconductor industry is moving towards increasingly smaller feature sizes. As integrated circuit process technology nodes fall below 65nm, the critical dimensions of isolated and sparse patterns change with the focal length. This leads to insufficient depth of focus in photolithography processes during actual production, and the increasingly narrow process window becomes one of the key factors restricting product stability and yield improvement. Commonly used process window enhancement techniques in the industry include multiple exposure technology, illumination optimization technology, and sub-resolution assisted patterning technology, among others.

[0033] Sub-Resolution Assist Feature (SRAF) technology compensates for light diffraction effects and process nonlinearities by altering the amplitude distribution of the transmitted light field during photolithography. It can improve the photolithographic resolution of patterns, effectively reduce the impact of focal length variations on critical dimensions, and further enhance the depth of focus in the photolithography process. Many factors influence the performance of SRAF, such as the size of the SRAF itself, the distance and position between the SRAF and the main pattern, and the distance between SRAFs. In practical production applications, many factors affect SRAF, including the shape, size, number, range, placement, and influence of surrounding patterns. These factors are all closely related to the final improvement in image resolution.

[0034] Existing technologies for placing auxiliary patterns primarily rely on parameters such as pattern size and distance to select placement edges and positions. While this simplifies the process, it neglects the overall layout and relative positions of the patterns, resulting in placement positions that cannot precisely match the complex requirements of photolithography processes. Furthermore, when correcting according to mask manufacturing rules, existing technologies only focus on whether the correction result meets the predetermined rule parameters, neglecting the preservation of the auxiliary pattern's shape during the correction process. This is especially true for auxiliary patterns with specific shape requirements, where correction often results in the loss of the original shape relationships, affecting the expected improvement in photolithography resolution and process stability. Therefore, these limitations of existing technologies not only restrict the potential of auxiliary patterns in improving photolithography performance but also fail to meet the urgent needs of the semiconductor industry for high-precision, high-stability photolithography processes as it moves towards smaller feature sizes.

[0035] To address the problems existing in the prior art, embodiments of this application provide an auxiliary graphic correction method, apparatus, device, medium, and product.

[0036] This application provides an auxiliary graphic correction method, apparatus, medium, and product. The auxiliary graphic correction method provided in this application will be described first. For example... Figure 1 As shown, the method specifically includes the following steps:

[0037] S100, Based on the graphic attributes of each graphic in the initial layout, determine at least one target edge in the initial layout.

[0038] Optionally, in this embodiment, the initial layout includes the layout information of all patterns to be photolithographically etched onto the silicon wafer. These patterns are arranged according to specific design rules to form the functional circuits and interconnect structures of the final chip. The initial layout is a direct input to the photolithography process, and its quality directly affects the chip's performance and yield.

[0039] In the initial layout, there are multiple different graphics representing different components of the chip, such as transistors, capacitors, and metal lines. These graphics have their own shapes, sizes, and positions, and together they constitute the complete layout of the chip. The accuracy of the graphics and the coordination between them are crucial to ensuring the realization of the chip's functions.

[0040] Optionally, auxiliary patterns are specially designed graphic structures added to the initial layout to improve the light field distribution and pattern resolution during the photolithography process. While auxiliary patterns do not directly contribute to the chip's functionality, their presence can significantly improve the precision and stability of the photolithography process. By precisely controlling the position, shape, and size of the auxiliary patterns, diffraction and proximity effects during photolithography can be effectively compensated, ensuring that the final pattern's shape and size meet design requirements.

[0041] Optionally, target edges refer to graphic edges selected in the initial layout as references for placing auxiliary graphics. The selection of these target edges is based on a comprehensive consideration of multiple factors, including but not limited to the geometric dimensions, shape features, positional relationships of the graphics, and their potential impact on lithographic resolution.

[0042] Optionally, in one feasible implementation of this application, the detailed graphic attributes of each graphic in the initial layout are first comprehensively analyzed. These attributes include, but are not limited to, the geometric dimensions (such as length and width), shape features (such as rectangles, circles, polygons, etc.), and their relative positional relationships. Based on this detailed information, a series of logical judgments and geometric calculations can be used to identify graphic edges that have a potentially key role in improving lithographic resolution.

[0043] During the identification process, priority can be given to graphic edges located in key positions and significantly influencing surrounding graphics or the overall layout as candidate target edges. For example, for densely packed graphic areas, edges that are prone to resolution degradation due to diffraction effects during the lithography process can be selected; while in open areas, edges that can guide the light field distribution and enhance lithographic uniformity are preferred. Furthermore, factors such as the size ratio and shape symmetry of the graphics can be considered to ensure that the selected target edges can most effectively serve as a reference for auxiliary graphic placement.

[0044] Once candidate target edges are identified, further screening and evaluation can be conducted to ensure that the final selected target edges not only meet the physical limitations of the photolithography process but also maximize the photolithography resolution. Specifically, this may involve checking the compatibility of candidate target edges with other pattern edges. Ultimately, accurately identifying at least one (or more) target edges in the initial layout lays a solid foundation for the precise placement and effective correction of auxiliary patterns in subsequent steps.

[0045] S200, using the first edge as a reference, construct an identification region, where the first edge is any one of the at least one target edge.

[0046] Optionally, in this embodiment, the identification region is a specific area constructed based on a preset region range, using a first side (any one of at least one target side) as a reference. The identification region is a two-dimensional geometric shape with clearly defined boundaries, such as a rectangle, circle, sector, or polygon. Its size and shape can be determined by parameters of the preset region range and specific attributes of the first side (such as length, direction, and position). The main function of the identification region is to provide a clear spatial range so that the specific placement of auxiliary graphics can be evaluated and determined within this range, thereby maximizing the improvement of lithographic resolution.

[0047] The preset region range refers to a set of parameters for the size, shape, and position of one or more regions, pre-defined based on the requirements of the photolithography process, mask manufacturing rules, and the layout characteristics of the initial pattern. These parameters define the boundary conditions when constructing the recognition region around the target edge (i.e., the first edge), ensuring that the recognition region can cover critical areas where resolution may decrease due to physical effects during the photolithography process (such as diffraction and proximity effects), while not being too large to introduce unnecessary complexity or violate mask manufacturing rules.

[0048] Optionally, in one feasible implementation of this application, a two-dimensional recognition region can be constructed based on preset region range parameters, using a first side (i.e., any one of at least one target side) as the starting point or reference line. The size, shape, and orientation of this recognition region are determined based on preset parameters and the specific attributes of the first side (such as length, orientation, and position), aiming to cover critical areas where resolution may decrease due to diffraction and proximity effects during the photolithography process.

[0049] When constructing the recognition region, the physical limitations of the photolithography process and the requirements of mask manufacturing rules should be considered. For example, the size of the recognition region needs to meet the minimum feature size limit to ensure that the auxiliary pattern can be accurately identified and replicated during the photolithography process; at the same time, the position and shape of the recognition region also need to be compatible with the mask manufacturing rules to avoid violations in subsequent mask manufacturing processes.

[0050] It should be noted that the first edge is defined as any one of the at least one target edge. Since there may be multiple target edges suitable for placing auxiliary graphics in the initial layout, S200 can be performed separately for each target edge, that is, a recognition region can be constructed based on each target edge. This approach allows for a more comprehensive consideration of the layout characteristics of the initial layout, ensuring that auxiliary graphics are placed in multiple key locations, thereby further improving the uniformity and stability of the lithography resolution.

[0051] S300, if a main graphic exists in the identification area, an initial auxiliary graphic is added between the main graphic and the first side.

[0052] Optionally, in this embodiment, the main pattern refers to a key pattern in the initial layout that significantly affects the lithographic resolution. In integrated circuit design, due to physical phenomena such as diffraction and proximity effects during lithography, the edges of these main patterns may become blurred or distorted, thus affecting the lithographic resolution. Therefore, during auxiliary pattern correction, the main pattern is an object that requires special attention; the addition of auxiliary patterns is to improve the performance of these main patterns during the lithography process.

[0053] Optionally, in one feasible implementation of this application, an initial auxiliary graphic can be added based on a preset placement position along the line connecting the main graphic and the first side. The line connecting the main graphic and the first side can refer to a straight line direction starting from a specific point (such as the center point, edge point, etc., depending on design requirements) of the main graphic (the main graphic existing in the recognition area) and pointing to a point (such as the midpoint, edge point, etc.) on the first side (or its extension). This direction is the reference direction for determining how the initial auxiliary graphic is placed relative to the main graphic and the reference edge.

[0054] Optionally, the preset placement position can be along the line connecting the main graphic and the first edge, starting from a specific point (such as the center point, edge point, etc.) of the main graphic, moving a preset distance along this line, and then adding the initial auxiliary graphic at this position. This preset distance can be determined according to process requirements, design goals, and the characteristics of the graphics in the initial layout to ensure that the initial auxiliary graphic can be correctly placed in the desired position and have the expected effect on the graphics in the initial layout.

[0055] Optionally, in one feasible implementation of this application, when it is determined that the recognition area contains the main graphic, the direction of the line connecting the main graphic and the first side will be determined. Specifically, a reference point (such as the center point or edge point) on the main graphic and a corresponding point (such as the intersection point, midpoint or preset offset point) on the first side can be selected, and the direction of the straight line between the two points can be determined.

[0056] Subsequently, based on the preset placement position, the auxiliary graphic is moved along this line from the reference point of the main graphic at a preset distance to find the ideal placement point. At this position, the initial auxiliary graphic is added with a preset graphic size. The preset graphic size can be pre-set according to the requirements of the photolithography process, mask manufacturing rules, and the layout characteristics of the initial pattern, aiming to ensure that the auxiliary graphic can be accurately identified and replicated during the photolithography process.

[0057] It is important to note that during the process of adding the initial auxiliary pattern, a series of checks and verifications can be performed to ensure that the placement, size, and orientation of the auxiliary pattern meet the preset conditions and can coexist harmoniously with other patterns in the initial layout. This series of steps ensures the successful addition of the initial auxiliary pattern to the initial layout, providing strong support for subsequent photolithography processes, thereby improving photolithography resolution and enhancing the quality and performance of chip manufacturing.

[0058] S400, determine whether the initial auxiliary pattern conforms to the preset mask manufacturing rules;

[0059] S500, if not, then the initial auxiliary pattern is modified according to the preset mask manufacturing rules to obtain the target auxiliary pattern.

[0060] Optionally, in this embodiment, mask manufacturing rules refer to the specific requirements and limitations on the pattern design on the mask during semiconductor manufacturing, particularly in the photolithography stage. These rules are jointly determined by the physical characteristics of the semiconductor manufacturing process, material properties, equipment precision, and other factors in the manufacturing process. Mask manufacturing rules cover multiple aspects, including but not limited to the minimum size of the pattern, minimum spacing, angle and shape limitations of the pattern, and requirements for the symmetry and balance of the pattern. These rules exist to ensure that the pattern on the mask can be accurately copied and transferred to the silicon wafer during the manufacturing process, while avoiding defects and errors in the manufacturing process.

[0061] In S500, the target auxiliary graphic is a corrected auxiliary graphic that conforms to the preset mask manufacturing rules when the initial auxiliary graphic does not conform to them. The target auxiliary graphic matches the initial auxiliary graphic in shape, that is, their basic shape and outline are consistent, but they may differ in specific dimensions, positions, angles or other attributes to meet the requirements of the mask manufacturing rules.

[0062] Optionally, in one feasible implementation of this application, the added initial auxiliary pattern is first subjected to a compliance check, i.e., it is determined whether it conforms to the preset mask manufacturing rules. When it is detected that the initial auxiliary pattern does not meet the preset mask manufacturing rules, a correction process is initiated. This correction process first analyzes the specific differences between the initial auxiliary pattern and the preset mask manufacturing rules, including but not limited to the size, shape, position of the pattern, and its relative relationship with other patterns in the initial auxiliary pattern.

[0063] Next, the initial auxiliary patterns can be checked and compared one by one according to the preset mask manufacturing rules. If one or more attributes of the initial auxiliary patterns are found to exceed the range allowed by the preset mask manufacturing rules, these attributes can be adjusted accordingly. This adjustment can be a fine-tuning of the pattern size to ensure that it meets the specified dimensional tolerances; or it can be a repositioning of the pattern to avoid conflict or overlap with other patterns.

[0064] During the adjustment process, if the size or spacing does not conform to the rules, the size of the initial auxiliary pattern can be scaled proportionally, or the position of the initial auxiliary pattern can be adjusted to increase the spacing with adjacent patterns, until the preset mask manufacturing rules are met, thus obtaining the target auxiliary pattern. This adjustment needs to ensure that while changing the size or position, the basic shape of the auxiliary pattern remains unchanged, that is, its outline and main features remain consistent. This ensures that the target auxiliary pattern matches the initial auxiliary pattern in shape, but its specific attributes have undergone necessary optimization and improvement. In this way, in subsequent photolithography processes, the target auxiliary pattern can play its role more accurately, improving photolithography resolution and enhancing the quality and performance of chip manufacturing.

[0065] In the auxiliary pattern correction method, apparatus, device, medium, and product provided in this application embodiment, the target edge for placing the auxiliary pattern is first intelligently identified and selected based on the graphic attributes of each graphic in the initial layout, ensuring that the layout of the auxiliary pattern can accurately match the lithography requirements. Subsequently, by constructing an identification region, the main graphic region requiring enhancement is accurately located. When the main graphic is identified in the identification region, an initial auxiliary graphic is added between the main graphic and the first edge. This step fully considers the physical effects during the lithography process, improving the rationality of the auxiliary pattern design. Crucially, in the correction stage, this application not only ensures that the auxiliary pattern meets the basic rules of mask manufacturing but also emphasizes the precise maintenance of the auxiliary pattern shape, ensuring that the shape of the corrected target auxiliary pattern matches the shape of the initial auxiliary pattern before correction. This avoids the performance loss caused by simply meeting mask manufacturing rules while neglecting the shape relationship of the auxiliary pattern in traditional correction methods. Therefore, the corrected target auxiliary pattern can more effectively compensate for the light diffraction effect during the lithography process, reducing the impact of focal length changes on key graphic dimensions, thereby significantly improving lithography resolution and the stability of the process window, thus enhancing the correction effect of the auxiliary pattern.

[0066] In one embodiment, constructing the recognition region based on the first side includes:

[0067] The identification region is constructed based on the target endpoint of the first side; wherein the target endpoint is any endpoint of the first side.

[0068] Optionally, in one feasible implementation of this application, a target endpoint of the first side is first selected as the starting point or reference point for constructing the recognition region. This target endpoint can be any endpoint of the first side; the choice of endpoint depends on the layout characteristics of the map, the position of the main graphic, and the desired improvement effect of the auxiliary graphic. For example, if the main graphic is close to one end of the first side, then choosing the endpoint closer to the main graphic as the target endpoint might be more reasonable.

[0069] Once the target endpoint and the preset area range are determined, the recognition region is constructed. Specifically, based on preset boundary conditions (such as region size, shape, and orientation), a certain spatial area is extended outward from the target endpoint. This area is the recognition region; it covers potential locations where auxiliary graphics may need to be added, while also taking into account safe distances from adjacent graphics.

[0070] In a specific example, such as Figure 2 As shown, in the specific implementation, according to the preset area range, with the first side (i.e. Figure 2 The recognition region is constructed based on the target endpoint of a specific edge. This can be achieved by defining a circular region centered on the target endpoint with a preset radius (i.e., [S0, S1]) and combining this with a sector-shaped region within a specific angular range relative to the first edge (e.g., perpendicular to the first edge or within a certain angle along the direction of the first edge (i.e., [α0, α1])). This approach considers both the direct association with the first edge and precisely defines the possible locations for adding auxiliary graphics through the constraints of angle and radius.

[0071] In these alternative embodiments, constructing the identification region based on the target endpoint of the first side can accurately locate the position where the auxiliary pattern is added, ensuring that the auxiliary pattern can specifically improve the lithographic resolution problem near the target endpoint.

[0072] In one embodiment, when a main graphic exists in the identification area, adding an initial auxiliary graphic between the main graphic and the first side includes:

[0073] In the case that at least a portion of the main graphic exists in the recognition area, the first target point that is closest to the target endpoint among the graphic edges of the first graphic is obtained, wherein the first graphic is the portion of the at least a portion of the main graphic located in the recognition area;

[0074] Add the initial auxiliary graphic to the line connecting the target endpoint and the first target point.

[0075] Optionally, in one feasible implementation of this application, such as Figure 3As shown, when the recognition area contains at least part of the main graphic, it is necessary to accurately identify the edges of this part of the main graphic. It should be noted that these edges may be a complete graphic edge or a partial edge of a complete graphic edge, depending on the relative position of the main graphic and the recognition area. Image recognition algorithms or map analysis tools can be used to accurately delineate the boundaries of the main graphic within the recognition area and extract the relevant edge information.

[0076] Next, we can determine the first target point among these graphic edges that is closest to the target endpoint of the first edge. Specifically, we first iterate through all the points on the graphic edges, calculate their distances to the target endpoint, and find the point with the shortest distance as the first target point. It should be noted that the first target point could be an endpoint of a graphic edge, or it could be any point on the graphic edge, depending on its distance from the target endpoint.

[0077] After determining the primary target point, initial auxiliary graphics can be added based on preset placement distances and graphic dimensions. Specifically, for example... Figure 4 As shown, firstly, the direction of the line connecting the target endpoint to the first target point is calculated, and a point is positioned at a preset placement distance along this direction as the center point of the auxiliary graphic. Then, based on this center point, initial auxiliary graphics are added according to preset graphic dimensions (such as length, width, shape, etc.).

[0078] In these alternative embodiments, the placement based on the relative relationship between the main pattern and the first side can accurately locate the position for adding the initial auxiliary pattern, thereby achieving targeted improvement of the lithography resolution by the auxiliary pattern and improving the accuracy and efficiency of the lithography process.

[0079] In one embodiment, when a main graphic exists in the identification area, adding an initial auxiliary graphic between the main graphic and the first side further includes:

[0080] If at least two main graphics exist in the identification area, the second graphic among the at least two main graphics that is closest to the target endpoint is obtained;

[0081] Obtain the second target point that is closest to the target endpoint within the portion of the second graphic located in the recognition area;

[0082] Add the initial auxiliary graphic to the line connecting the target endpoint and the second target point.

[0083] Optionally, in one feasible implementation of this application, when the identification region contains at least two main graphics instead of a single main graphic, it is necessary to first identify which of these main graphics is closest to the first side. This step is crucial because it determines the reference position for subsequently adding initial auxiliary graphics, ensuring that the auxiliary graphics can most effectively act on the region requiring optimization. By traversing all the main graphics within the identification region and calculating their respective shortest distances to the first side, the closest second graphic can be determined.

[0084] Next, locate the portion of the second graphic that falls within the recognition area. Then, find the point on the edge of that portion of the second graphic that is within the recognition area that is closest to the target endpoint; this is the second target point. This step is also done by calculating the distance from each point on the edge of the graphic to the target endpoint, and selecting the point with the shortest distance as the second target point.

[0085] Once the second target point is determined, initial auxiliary graphics can be added to the initial layout along the line connecting the target endpoint and the second target point, according to the preset graphic size and placement distance. The preset graphic size is set based on the requirements of the photolithography process and the layout design specifications, aiming to ensure that the auxiliary graphics produce the expected effects during the photolithography process, such as improving resolution and reducing halo effects. The preset placement distance is determined based on the interaction mechanism between the main graphic and the auxiliary graphic, ensuring that the auxiliary graphic can effectively act on the main graphic while avoiding the introduction of unnecessary interference or errors.

[0086] In practical implementation, relevant functions in graphics processing software or algorithm libraries, such as distance calculation, graphic intersection detection, and point localization, can be used to automate the above steps. Furthermore, to improve efficiency and accuracy, optimization algorithms, such as heuristic search and iterative approximation, can be introduced to quickly find the optimal second graphic and the second target point.

[0087] In these alternative embodiments, when the recognition area contains at least two main patterns, this embodiment ensures that the initial auxiliary pattern can be accurately added to the nearest main pattern by determining the second pattern closest to the first edge and its portion within the recognition area, and finding the second target point closest to the target endpoint. This method improves the targeting and effectiveness of auxiliary pattern addition, further optimizes the photolithography process, and enhances manufacturing quality and efficiency.

[0088] In one embodiment, the identification region is a fan-shaped annular region, wherein the center of the fan-shaped annular region is the target endpoint. Setting the identification region as a fan-shaped annular region allows for precise definition of the optimal candidate region for placing auxiliary graphics based on the position and orientation of the main graphic. This helps the auxiliary graphics more effectively improve lithographic resolution, optimize layout, and increase production efficiency.

[0089] In one embodiment, determining at least one target edge in the initial layout based on the graphic attributes of each graphic in the initial layout includes:

[0090] If the graphic attributes of any graphic in the initial layout meet the preset filtering rules, the graphic edge that matches the preset filtering rules among the graphic edges of the graphic that meets the preset filtering rules is determined as the target edge. The graphic attributes include at least one of graphic length, graphic width, and distance between the graphic and adjacent graphics. The preset filtering rules are determined according to the design parameters of the initial layout.

[0091] Optionally, in one feasible implementation of this application, firstly, each graphic in the initial layout is traversed. These graphics include various design elements such as lines, polygons, and circles, which together constitute the basic structure of the entire layout. For each graphic, its graphic attributes are checked. These attributes include, but are not limited to, the graphic's length, width, and distance from neighboring graphics. These attributes are important criteria for determining whether a graphic meets specific design requirements or optimization conditions.

[0092] Next, the graphic attributes of each graphic are evaluated according to preset filtering rules. These preset filtering rules are determined based on the design parameters of the initial layout, and they involve multiple aspects such as the size range of the graphic, shape requirements, and layout density. For example, preset filtering rules require filtering out graphic edges with a length exceeding a certain threshold, or graphics that are too close to neighboring graphics. These rules are designed to quickly locate graphic edges that require special attention or processing.

[0093] After determining the filtering rules, each edge of each graphic can be compared one by one. If the attributes of a graphic edge match the preset filtering rules, then that graphic edge will be identified as the target edge. This process requires multiple iterations and comparisons to ensure that all graphic edges that meet the conditions are accurately identified.

[0094] For example, preset filtering rules require filtering out pattern edges whose length exceeds or falls below a certain threshold. For instance, in photolithography, excessively long lines may cause uneven exposure, thus requiring special attention and handling. Similarly, preset filtering rules can also be based on the width of the pattern edge. For example, lines that are too narrow may be prone to breakage during manufacturing, while lines that are too wide may increase manufacturing costs or occupy unnecessary space.

[0095] For example, preset filtering rules can check the distance between the edges of a graphic and its neighboring graphics. For instance, to avoid short circuits or signal interference, it might be necessary to filter out edges with excessively small gaps and adjust them. In some cases, it can also be used to monitor the graphic density within a specific area.

[0096] In a specific example, the preset filtering rule is to select all graphic edges whose distance from adjacent graphics is less than 5nm, in order to perform reinforcement processing. In this scenario, the preset filtering rule is "distance filtering," and the specific condition is "distance less than 5nm." Subsequently, each graphic edge in the layout is traversed, its distance from adjacent graphics is checked, and graphic edges with a distance less than 5nm are marked as target edges.

[0097] It should be noted that because the initial layout may contain a large number of graphics of varying shapes, this process can be quite complex and time-consuming. To improve the efficiency of the filtering process, optimization algorithms or data structures can be employed to accelerate the filtering and comparison process. For example, hash tables can be used to store the attribute information of the graphics for fast retrieval and matching; or parallel processing techniques can be used to process the attribute checks of multiple graphics simultaneously.

[0098] In these alternative embodiments, by precisely matching the key attributes of the graphics with preset filtering rules, target edges in the initial layout that require special attention or processing can be effectively identified. This method improves the efficiency and accuracy of layout analysis and optimization, helps to quickly locate and resolve potential design problems, such as excessively high layout density or non-compliant graphic dimensions, thereby improving the overall design quality and reliability of the layout.

[0099] In one embodiment, if not, the initial auxiliary pattern is modified according to the preset mask manufacturing rules to obtain the target auxiliary pattern, including:

[0100] If the size of the initial auxiliary graphic does not conform to the preset mask manufacturing rules, or if the distance between the initial auxiliary graphic and any graphic in the initial layout after adding the initial auxiliary graphic does not conform to the preset mask manufacturing rules, the initial auxiliary graphic is adjusted proportionally according to the preset mask manufacturing rules, that is, proportionally increased or decreased, to obtain the target auxiliary graphic, the shape of which is the same as the shape of the initial auxiliary graphic.

[0101] Optionally, in one feasible implementation of this application, ensuring that the auxiliary pattern conforms to the preset mask manufacturing rules is a crucial step in the semiconductor manufacturing process, directly affecting the quality and performance of the final product. When the initial auxiliary pattern's size or distance from other patterns does not conform to the preset mask manufacturing rules, a series of target proportional adjustments are required to correct these non-conformities, thereby obtaining a target auxiliary pattern that conforms to the rules.

[0102] Specifically, firstly, a comprehensive inspection of the initial auxiliary graphics is required to identify whether their dimensions or distances from other graphics exceed the limits allowed by the preset mask manufacturing rules. This can be achieved by setting rule inspection parameters to automatically scan and mark initial auxiliary graphics that do not conform to the preset mask manufacturing rules.

[0103] For any identified non-conformities, specific adjustment strategies need to be developed. If the initial auxiliary graphic is too large or too small, it can be adjusted by scaling it proportionally to ensure that it meets the preset mask manufacturing rules at the new size while maintaining its relative position to surrounding graphics. If the initial auxiliary graphic is too close or too far from surrounding graphics, its position needs to be adjusted by translation to conform to the preset spacing rules.

[0104] For example, adjusting the size of a graphic involves enlarging or reducing its overall size proportionally while keeping the initial auxiliary graphic shape unchanged. This process requires precise calculation of the adjustment ratio to ensure that the adjusted graphic size conforms to manufacturing rules and, as far as possible, matches the shape of the initial auxiliary graphic with the shape of the target auxiliary graphic. For positional adjustments, the initial auxiliary graphic can be shifted a certain distance along a specific direction to achieve the required spacing.

[0105] In another example, such as Figure 5 As shown, there is an initial auxiliary pattern, which is a square with a side length 'a' of 10 micrometers. According to the preset mask manufacturing rules, the minimum spacing between this initial auxiliary pattern and adjacent patterns should be 8 micrometers, but the actual spacing between the current initial auxiliary pattern and adjacent patterns is only 6 micrometers, so adjustment is required.

[0106] To increase spacing, the initial auxiliary graphic can be scaled proportionally. Specifically, the scaling can be done along the center of the initial auxiliary graphic. For example, if the initial auxiliary graphic is reduced to 0.9 times its original size (90%), that is, side length 'a' is scaled to side length 'b', the spacing between it and adjacent graphics will increase accordingly because the initial auxiliary graphic is reduced overall. Of course, in practice, the scaling ratio needs to be precisely calculated based on the specific layout and manufacturing rules to ensure that the spacing meets requirements without affecting other design elements.

[0107] It should be noted that while proportional scaling is a simple and effective adjustment method, it may not be the optimal solution in some cases. For example, if shrinking the initial auxiliary graphic results in it being too close to the graphic in another direction, or if the shrunk size cannot meet other design requirements, then other adjustment strategies need to be considered, such as shifting the position of the initial auxiliary graphic or adding additional auxiliary graphics.

[0108] After adjustments are made, the target auxiliary graphic needs to be verified to ensure it fully conforms to the preset mask manufacturing rules. Rule checks are used to confirm whether parameters such as graphic size and spacing of the target auxiliary graphic meet the standards. If problems are still found during verification, it is necessary to return to the previous step for further optimization and adjustments until the target auxiliary graphic fully meets the requirements.

[0109] Finally, the revised target auxiliary pattern is applied to the initial layout, and the layout design file is updated. This step is crucial to ensuring the smooth operation of subsequent manufacturing processes, as the revised auxiliary pattern directly affects mask fabrication and the manufacturing quality of semiconductor devices.

[0110] In these alternative embodiments, by adjusting the size or spacing of the pattern proportionally, the relative proportion of the pattern is maintained, and the initial auxiliary pattern is effectively corrected to the target auxiliary pattern that conforms to the preset mask manufacturing rules, thereby ensuring the smooth progress of the semiconductor manufacturing process and the reliability of product quality.

[0111] Optionally, in this embodiment, the application first selects the target edge where auxiliary graphics need to be placed based on the length, width, and distance of the graphics in the initial layout. It then identifies the region based on the endpoint positions of the target edge and places the auxiliary graphics according to the positional relationship between the specific edge and the graphics in the identified region, setting the length and width dimensions of the auxiliary graphics for placement at the selected position. By correcting the placed auxiliary graphics according to the requirements of the mask manufacturing rules, a sub-resolution auxiliary graphic layout in GDS / OASIS format, placed based on the relationships between the layout graphics, can be obtained.

[0112] This application utilizes the graphic dimensions and positional relationships between graphics in the initial layout to place sub-resolution auxiliary graphics, quickly and efficiently selecting graphic environments that meet the placement conditions, avoiding tedious selection processes, improving placement efficiency, and enhancing the ease of use of the placement function; when modifying auxiliary graphics of a specific size ratio, this application can maintain the original ratio while modifying under the condition of satisfying the mask manufacturing rules, satisfying various needs for the modification results of auxiliary graphics.

[0113] Figure 6 A schematic diagram of an auxiliary graphic correction device provided in another embodiment of this application is shown. For ease of explanation, only the parts related to the embodiments of this application are shown.

[0114] Reference Figure 6 The auxiliary graphic correction device may include:

[0115] The determining module 601 is used to determine at least one target edge in the initial layout based on the graphic attributes of each graphic in the initial layout.

[0116] Construction module 602 is used to construct a recognition region based on a first edge, wherein the first edge is any one of the at least one target edge;

[0117] Adding module 603 is used to add an initial auxiliary graphic between the main graphic and the first side when the main graphic exists in the identification area;

[0118] The judgment module 604 is used to determine whether the initial auxiliary pattern conforms to the preset mask manufacturing rules;

[0119] The correction module 605 is used to correct the initial auxiliary pattern according to the preset mask manufacturing rules if no, so as to obtain the target auxiliary pattern.

[0120] In one embodiment, the construction module 602 may include:

[0121] A construction submodule is used to construct the recognition region based on the target endpoint of the first side; wherein the target endpoint is any endpoint of the first side.

[0122] In one embodiment, the adding module 603 may include:

[0123] The first acquisition submodule is used to acquire, when at least a portion of the main graphics exist in the recognition area, the first target point that is closest to the target endpoint among the graphic edges of the first graphic, wherein the first graphic is the portion of the at least a portion of the main graphics located in the recognition area;

[0124] The first addition submodule is used to add the initial auxiliary graphic to the line connecting the target endpoint and the first target point.

[0125] In one embodiment, the adding module 603 may further include:

[0126] The second acquisition submodule is used to acquire the second graphic among the at least two main graphics that is closest to the target endpoint when there are at least two main graphics in the identification area.

[0127] The third acquisition submodule is used to acquire the second target point that is closest to the target endpoint in the portion of the second graphic located in the recognition area;

[0128] The second addition submodule is used to add the initial auxiliary graphic to the line connecting the target endpoint and the second target point.

[0129] In one embodiment, the identification area is a fan-shaped annular area, wherein the center of the fan-shaped annular area is the target endpoint.

[0130] In one embodiment, the determining module 601 may include:

[0131] The determination submodule is used to determine the target edge among the graphic edges of the graphic that match the preset filtering rules when the graphic attributes of any graphic in the initial layout meet the preset filtering rules. The graphic attributes include at least one of graphic length, graphic width, and distance between the graphic and adjacent graphics. The preset filtering rules are determined according to the design parameters of the initial layout.

[0132] In one embodiment, the correction module 605 may include:

[0133] The correction submodule is used to adjust the initial auxiliary graphic proportionally according to the preset mask manufacturing rules when the graphic size of the initial auxiliary graphic does not conform to the preset mask manufacturing rules, or when the distance between the initial auxiliary graphic and any graphic in the initial layout after adding the initial auxiliary graphic does not conform to the preset mask manufacturing rules, so as to obtain the target auxiliary graphic, the shape of the target auxiliary graphic being the same as the shape of the initial auxiliary graphic.

[0134] It should be noted that the information interaction and execution process between the above-mentioned devices / units are based on the same concept as the method embodiments of this application, and are devices corresponding to the above-mentioned methods. All implementation methods in the above-mentioned method embodiments are applicable to the embodiments of this device. For details on its specific functions and the technical effects it brings, please refer to the method embodiment section, which will not be repeated here.

[0135] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0136] Figure 7 A schematic diagram of the hardware structure of the electronic device provided in an embodiment of this application is shown.

[0137] The device may include a processor 701 and a memory 702 storing program instructions.

[0138] When processor 701 executes the program, it implements the steps in any of the above method embodiments.

[0139] For example, the program can be divided into one or more modules / units, one or more of which are stored in memory 702 and executed by processor 701 to complete this application. The one or more modules / units can be a series of program instruction segments capable of performing a specific function, which describe the execution process of the program in the device.

[0140] Specifically, the processor 701 may include a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits that can be configured to implement the embodiments of this application.

[0141] Memory 702 may include mass storage for data or instructions. For example, and not limitingly, memory 702 may include a hard disk drive (HDD), floppy disk drive, flash memory, optical disk, magneto-optical disk, magnetic tape, or Universal Serial Bus (USB) drive, or a combination of two or more of these. Where appropriate, memory 702 may include removable or non-removable (or fixed) media. Where appropriate, memory 702 may be internal or external to the integrated gateway disaster recovery device. In a particular embodiment, memory 702 is non-volatile solid-state memory.

[0142] Memory may include read-only memory (ROM), random access memory (RAM), disk storage media devices, optical storage media devices, flash memory devices, and electrical, optical, or other physical / tangible memory storage devices. Therefore, typically, memory includes one or more tangible (non-transitory) readable storage media (e.g., memory devices) encoded with software including computer-executable instructions, and when the software is executed (e.g., by one or more processors), it is operable to perform the operations described with reference to the methods according to one aspect of this disclosure.

[0143] The processor 701 implements any of the methods described in the above embodiments by reading and executing program instructions stored in the memory 702.

[0144] In one example, the electronic device may also include a communication interface 703 and a bus 710. The processor 701, memory 702, and communication interface 703 are connected via the bus 710 and communicate with each other.

[0145] The communication interface 703 is mainly used to realize communication between various modules, devices, units and / or equipment in the embodiments of this application.

[0146] Bus 710 includes hardware, software, or both, that couples components of an online data traffic metering device together. For example, and not limitingly, the bus may include an Accelerated Graphics Port (AGP) or other graphics bus, an Enhanced Industry Standard Architecture (EISA) bus, a Front Side Bus (FSB), HyperTransport (HT) interconnect, an Industry Standard Architecture (ISA) bus, an Infinite Bandwidth Interconnect, a Low Pin Count (LPC) bus, a memory bus, a Microchannel Architecture (MCA) bus, a Peripheral Component Interconnect (PCI) bus, a PCI-Express (PCI-X) bus, a Serial Advanced Technology Attachment (SATA) bus, a Video Electronics Standards Association Local (VLB) bus, or other suitable buses, or combinations of two or more of these. Where appropriate, bus 710 may include one or more buses. Although specific buses are described and illustrated in embodiments of this application, any suitable bus or interconnect is contemplated herein.

[0147] Furthermore, in conjunction with the methods in the above embodiments, this application embodiment can provide a storage medium for implementation. This storage medium stores program instructions; when these program instructions are executed by a processor, they implement any of the methods in the above embodiments.

[0148] This application also provides a chip, which includes a processor and a communication interface. The communication interface and the processor are coupled. The processor is used to run programs or instructions to implement the various processes of the above method embodiments and achieve the same technical effect. To avoid repetition, it will not be described again here.

[0149] It should be understood that the chip mentioned in the embodiments of this application may also be referred to as a system-on-a-chip, system chip, chip system, or system-on-a-chip, etc.

[0150] This application provides a computer program product, which is stored in a storage medium and executed by at least one processor to implement the various processes of the above method embodiments and achieve the same technical effects. To avoid repetition, it will not be described again here.

[0151] It should be clarified that this application is not limited to the specific configurations and processes described above and shown in the figures. For the sake of brevity, detailed descriptions of known methods are omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of this application is not limited to the specific steps described and shown. Those skilled in the art can make various changes, modifications, and additions, or change the order of steps, after understanding the spirit of this application.

[0152] The functional modules shown in the above block diagram can be implemented as hardware, software, firmware, or a combination thereof. When implemented in hardware, they can be, for example, electronic circuits, application-specific integrated circuits (ASICs), appropriate firmware, plug-ins, function cards, etc. When implemented in software, the elements of this application are programs or code segments used to perform the required tasks. Programs or code segments can be stored on machine-readable media or transmitted over a transmission medium or communication link via data signals carried on a carrier wave. "Machine-readable media" can include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROM, flash memory, erasable ROM (EROM), floppy disks, CD-ROMs, optical disks, hard disks, fiber optic media, radio frequency (RF) links, etc. Code segments can be downloaded via computer grids such as the Internet, intranets, etc.

[0153] It should also be noted that the exemplary embodiments mentioned in this application describe methods or systems based on a series of steps or apparatus. However, this application is not limited to the order of the above steps; that is, the steps can be performed in the order mentioned in the embodiments, or in a different order, or several steps can be performed simultaneously.

[0154] The aspects of this disclosure have been described above with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and program products according to embodiments of this disclosure. It should be understood that each block in the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing apparatus to create a machine such that these instructions, executable via the processor of the computer or other programmable data processing apparatus, enable the implementation of the functions / actions specified in one or more blocks of the flowchart illustrations and / or block diagrams. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor, or a field-programmable logic circuit. It is also understood that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, can also be implemented by special-purpose hardware performing the specified functions or actions, or can be implemented by a combination of special-purpose hardware and computer instructions.

[0155] The above are merely specific embodiments of this application. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, modules, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. It should be understood that the protection scope of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the protection scope of this application.

Claims

1. An auxiliary graphic correction method, characterized in that, The method includes: Based on the graphic attributes of each graphic in the initial layout, determine at least one target edge in the initial layout; A recognition region is constructed based on the first edge, where the first edge is any one of the at least one target edge; If a main graphic exists in the identification area, an initial auxiliary graphic is added between the main graphic and the first side; Determine whether the initial auxiliary pattern conforms to the preset mask manufacturing rules; If not, the initial auxiliary pattern is modified according to the preset mask manufacturing rules to obtain the target auxiliary pattern; The step of correcting the initial auxiliary pattern according to the preset mask manufacturing rules to obtain the target auxiliary pattern includes: If the size of the initial auxiliary graphic does not conform to the preset mask manufacturing rules, or if the distance between the initial auxiliary graphic and any graphic in the initial layout after adding the initial auxiliary graphic does not conform to the preset mask manufacturing rules, the size of the initial auxiliary graphic is scaled and adjusted proportionally according to the preset mask manufacturing rules to obtain the target auxiliary graphic, or the position of the initial auxiliary graphic is adjusted so that the shape and outline of the target auxiliary graphic are consistent with those of the initial auxiliary graphic.

2. The method according to claim 1, characterized in that, The process of constructing a recognition region based on the first side includes: The identification region is constructed based on the target endpoint of the first side; wherein the target endpoint is any endpoint of the first side.

3. The method according to claim 2, characterized in that, When a main graphic exists in the recognition area, adding an initial auxiliary graphic between the main graphic and the first side includes: In the case that at least a portion of the main graphic exists in the recognition area, the first target point that is closest to the target endpoint among the graphic edges of the first graphic is obtained, wherein the first graphic is the portion of the at least a portion of the main graphic located in the recognition area; Add the initial auxiliary graphic to the line connecting the target endpoint and the first target point.

4. The method according to claim 2, characterized in that, When a main graphic exists in the recognition area, adding an initial auxiliary graphic between the main graphic and the first side further includes: If at least two main graphics exist in the identification area, the second graphic among the at least two main graphics that is closest to the target endpoint is obtained; Obtain the second target point that is closest to the target endpoint within the portion of the second graphic located in the recognition area; Add the initial auxiliary graphic to the line connecting the target endpoint and the second target point.

5. The method according to claim 2, characterized in that, The identification area is a fan-shaped annular region, wherein the center of the fan-shaped annular region is the target endpoint.

6. The method according to claim 1, characterized in that, The step of determining at least one target edge in the initial layout based on the graphic attributes of each graphic in the initial layout includes: If the graphic attributes of any graphic in the initial layout meet the preset filtering rules, the graphic edge that matches the preset filtering rules among the graphic edges of the graphic that meets the preset filtering rules is determined as the target edge. The graphic attributes include at least one of graphic length, graphic width, and distance between the graphic and adjacent graphics. The preset filtering rules are determined according to the design parameters of the initial layout.

7. An electronic device, characterized in that, The device includes: a processor and a memory storing computer program instructions; When the processor executes the computer program instructions, it implements the auxiliary graphics correction method as described in any one of claims 1-6.

8. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer program instructions, which, when executed by a processor, implement the auxiliary graphics correction method as described in any one of claims 1-6.

9. A computer program product, characterized in that, When the instructions in the computer program product are executed by the processor of the electronic device, the electronic device performs the auxiliary graphics correction method as described in any one of claims 1-6.

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