A remote control method and related equipment for a dynamic crystallizer of refined naphthalene

Abstract

The present application relates to a remote control method for a refined naphthalene dynamic crystallizer, and relates to the field of chemical purification. The method includes obtaining the purity of the naphthalene raw material, the image of the inner wall of each crystallization tube of the crystallizer after the naphthalene raw material is crystallized, determining the required heating time based on the first crystal thickness and purity of each crystallization tube, controlling the temperature control device to raise the crystallizer to a preset temperature and obtaining the video information of the top of the separation chamber at the bottom of the crystallizer, and calculating the dripping rate of thiophene in real time based on the video information. When the dripping rate is less than the preset rate, obtaining the current image of the inner wall of the crystallization tube and the current heating time, determining the first difference between the required heating time and the current heating time, and determining the second difference between the first crystal thickness and the second crystal thickness of each crystallization tube, and controlling the flushing device to introduce water into the crystallization tube based on the first difference and the second difference to control the ventilation device to introduce air into the crystallization tube. The present application has the effect of improving the removal of the content of thiophene impurities.

Description

Technical Field

[0001] The present application relates to the field of chemical purification, and in particular to a remote control method for a refined naphthalene dynamic crystallizer and related equipment. Background Art

[0002] Falling film crystallizers are usually used for industrial purification of refined naphthalene. The molten naphthalene raw material flows into the crystallization tube of the crystallizer and forms crystals on the inner wall of the crystallization tube under the action of the refrigerant. However, the presence of thionaphthene impurities in the crystals affects the purity of refined naphthalene. The impurity thionaphthene is also in the form of crystals, so the temperature needs to be controlled by the heat medium to melt only the impurity thionaphthene. The melted impurity thionaphthene is discharged downward under the action of gravity. However, since the thionaphthene crystals are embedded in the naphthalene crystals, the thionaphthene impurities may not be melted completely, or they may not drip in time after melting, resulting in the impurity thionaphthene not being completely removed. Summary of the invention

[0003] In order to remove the thionaphthene impurities in the crystals more quickly and more thoroughly, the present application provides a remote control method and related equipment for a refined naphthalene dynamic crystallizer.

[0004] In the first aspect, the present application provides a remote control method for a refined naphthalene dynamic crystallizer, which adopts the following technical solution:

[0005] A remote control method for a refined naphthalene dynamic crystallizer, comprising:

[0006] Acquire the purity of the naphthalene raw material and the image of the inner wall of each crystallization tube of the crystallizer after the naphthalene raw material is crystallized;

[0007] Determine a first crystal thickness of each crystal tube based on the image, and determine a required heating time based on the first crystal thickness and purity;

[0008] Controlling the temperature control device to raise the medium to a preset temperature, raise the crystallizer to a preset temperature, and obtain video information of the top of the separation chamber at the bottom of the crystallizer, wherein the preset temperature is a temperature at which thionaphthene in the crystallizer reaches a melting point;

[0009] Calculating the dripping rate of the thionaphthene in real time based on the video information;

[0010] When the dripping rate is less than a preset rate, acquiring a current image of the inner wall of the crystal tube and a current heating time, and determining a first difference between the required heating time and the current heating time;

[0011] Determine a second crystal thickness of each crystal tube based on the current image, and determine a second difference between the first crystal thickness and the second crystal thickness;

[0012] Based on the first difference and the second difference, the flushing device is controlled to introduce water into the crystallization tube, and the ventilation device is controlled to introduce air into the crystallization tube.

[0013] By adopting the above technical scheme, the purity of the naphthalene raw material and the image of the inner wall of each crystallization tube of the crystallizer after the crystallization of the naphthalene raw material are obtained. The purity reflects the content of thionaphthene in the naphthalene raw material, and the image can show the crystallization of the inner wall. The first crystal thickness of each crystallization tube is determined based on the image. The larger the first crystal thickness, the deeper the position of thionaphthene in the inner wall of the crystallization tube may be. The required heating time is determined based on the first crystal thickness and purity. The first crystal thickness is proportional to the required heating time. The lower the purity, the more thionaphthene, and the longer the required heating time. The temperature control device is controlled to raise the medium to a preset temperature that can melt thionaphthene but not naphthalene, and then the crystallizer is raised to the preset temperature, and the video information of the top of the separation chamber at the bottom of the crystallizer is obtained. The video information can show the dripping of thionaphthene in the crystallization. The dripping rate of thionaphthene is calculated in real time based on the video information. When the dripping rate is less than the preset rate, it means that thionaphthene is dripping more and more. The content of thionaphthene is also decreasing, and it enters the final stage. Therefore, the current image of the inner wall of the crystallization tube and the current heating time are obtained, and the first difference between the required heating time and the current heating time is determined. The required heating time has not been reached but the thionaphthene drips less and less, indicating that the thionaphthene in the crystal is not removed thoroughly enough. Therefore, the second crystal thickness of each crystallization tube is determined based on the current image, and the second difference between the first crystal thickness and the second crystal thickness is determined. The second difference characterizes the melting condition of thionaphthene. Based on the first difference and the second difference, the flushing device is controlled to introduce water flow into the crystallization tube and the ventilation device is controlled to introduce air into the crystallization tube. The medium in the temperature control device melts the crystals on the inner wall from outside to inside. The introduction of water flow can melt the crystals from inside to outside, which can make the impurity thionaphthene melt and drip faster. The introduction of air can promote the evaporation of residual water in the crystallization tube, so that the thionaphthene impurities in the crystal can be removed faster and more thoroughly.

[0014] In another possible implementation manner, determining the first crystal thickness of each crystal tube based on the image includes:

[0015] Performing edge detection on the image to obtain a crystal outline of each crystal tube, wherein the crystal outline is composed of a plurality of line segments connected;

[0016] Determine the minimum distance from each inner convex point of the crystal to the central axis of the crystal tube from the crystal outline, wherein the inner convex point is the endpoint of each line segment closest to the central axis;

[0017] A difference between a preset radius and the minimum distance is calculated, wherein the preset radius is the radius of the crystal tube, and the difference represents a first crystal thickness of each crystal tube.

[0018] In another possible implementation, determining the required heating time based on the first crystal thickness and purity includes:

[0019] Determining the maximum value of the first crystal thickness from the first crystal thicknesses of all crystal tubes;

[0020] Calculating an average value of the first crystal thickness, and calculating a difference between the maximum value and the average value;

[0021] determining a first number of target crystal thicknesses having a first crystal thickness greater than the average value;

[0022] Determining a score based on the first quantity, the difference, the purity, and the respective corresponding first coefficients;

[0023] A target preset score interval in which the score is located is determined from a plurality of preset score intervals, each preset score interval corresponds to a preset heating time, and the preset heating time of the target preset score interval is determined as the required heating time.

[0024] In another possible implementation, the real-time calculation of the dripping rate of the thionaphthene based on the video information includes:

[0025] Determining a second number of thionaphthene droplets generated at the bottom of each crystal tube in each frame;

[0026] Determine the total number of thionaphthene droplets generated by all crystal tubes in each frame based on the second number;

[0027] A preset number of consecutive frames is determined, and a total number of thionaphthene droplets in the preset number of consecutive frames is calculated, wherein the total number represents the drop rate.

[0028] In another possible implementation, the controlling the flushing device to introduce water into the crystallization tube and the controlling the ventilation device to introduce air into the crystallization tube based on the first difference and the second difference includes:

[0029] Determine a ratio of the second difference to the first crystal thickness, determine a third number whose ratio is less than a preset ratio, and determine a ratio of the third number to the total number of crystal tubes;

[0030] Determine the variance of the second difference of each crystal tube, and determine the impurity removal quality score based on the proportion, the first difference, the variance and the second coefficients corresponding to each of them;

[0031] The duration of introducing the water flow and the duration of introducing the air are determined based on the impurity removal quality score.

[0032] In another possible implementation, a conduit corresponds to the top of each crystallization tube, each of the conduits is provided with a valve, the flushing device and the water passing device are both connected to the conduit, and the determining of the duration of introducing the water flow and the duration of introducing the air based on the impurity removal quality score includes:

[0033] Determine a reference flushing time and a reference air conduction time based on the impurity removal quality score;

[0034] Determine the compensatory water flushing time and the compensatory air conduction time of each crystallization tube based on the ratio and the first crystal thickness;

[0035] Obtaining the duration of the introduced water flow of each crystal tube based on the reference flushing duration and the compensation flushing duration;

[0036] The air introduction time of each crystallization tube is obtained based on the reference air introduction time and the compensation air introduction time.

[0037] In another possible implementation, the method further includes:

[0038] Determine the sum of the number of target crystal tubes for which the second difference is lower than a preset minimum difference;

[0039] When the sum of the quantities is higher than a preset maximum quantity, a prompt message is output.

[0040] In a second aspect, the present application provides a remote control device for a refined naphthalene dynamic crystallizer, which adopts the following technical solution:

[0041] A remote control device for a refined naphthalene dynamic crystallizer, comprising:

[0042] A first acquisition module is used to acquire the purity of the naphthalene raw material and the image of the inner wall of each crystallization tube of the crystallizer after the naphthalene raw material is crystallized;

[0043] A first determination module, configured to determine a first crystal thickness of each crystal tube based on the image, and determine a required heating time based on the first crystal thickness and purity;

[0044] A first control module is used to control the temperature control device to raise the medium to a preset temperature, raise the crystallizer to a preset temperature, and obtain video information of the top of the separation chamber at the bottom of the crystallizer, wherein the preset temperature is a temperature at which thionaphthene in the crystal can reach a melting point;

[0045] A calculation module, used for calculating the dripping rate of the thionaphthene in real time based on the video information;

[0046] A second acquisition module, for acquiring a current image of the inner wall of the crystal tube and a current heating time when the dripping rate is less than a preset rate, and determining a first difference between the required heating time and the current heating time;

[0047] A second determination module, configured to determine a second crystal thickness of each crystal tube based on the current image, and determine a second difference between the first crystal thickness and the second crystal thickness;

[0048] The second control module is used to control the flushing device to introduce water into the crystallization tube and control the ventilation device to introduce air into the crystallization tube based on the first difference and the second difference.

[0049] By adopting the above technical solution, the first acquisition module obtains the purity of the naphthalene raw material and the image of the inner wall of each crystallization tube of the crystallizer after the crystallization of the naphthalene raw material is completed. The purity reflects the content of thionaphthene in the naphthalene raw material, and the image can show the crystallization of the inner wall. The first determination module determines the first crystal thickness of each crystallization tube based on the image. The larger the first crystal thickness, the deeper the position of thionaphthene in the inner wall of the crystallization tube may be. The required heating time is determined based on the first crystal thickness and purity. The first crystal thickness is proportional to the required heating time. The lower the purity, the more thionaphthene, and the longer the required heating time. The first control module controls the temperature control device to raise the medium to a preset temperature that can melt thionaphthene but not naphthalene, and then raises the crystallizer to the preset temperature, and obtains video information from the top of the separation chamber at the bottom of the crystallizer. The video information can show the dripping of thionaphthene in the crystallization. The calculation module calculates the dripping rate of thionaphthene in real time based on the video information. When the dripping rate is less than the preset rate, it means that the thionaphthene drips more The amount of thionaphthene is getting less and less, and the content of thionaphthene is also getting less and less, and it enters the final stage. Therefore, the second acquisition module obtains the current image of the inner wall of the crystallization tube and the current heating time, and determines the first difference between the required heating time and the current heating time. The required heating time has not been reached, but the thionaphthene drips less and less, indicating that the thionaphthene in the crystal is not removed thoroughly enough. Therefore, the second determination module determines the second crystal thickness of each crystallization tube based on the current image, and determines the second difference between the first crystal thickness and the second crystal thickness. The second difference characterizes the melting of thionaphthene. The second control module controls the flushing device to introduce water flow into the crystallization tube based on the first difference and the second difference, and controls the ventilation device to introduce air into the crystallization tube. The medium in the temperature control device melts the crystals on the inner wall from the outside to the inside. The introduction of water flow can melt the crystals from the inside to the outside, which can make the impurity thionaphthene melt and drip faster. The introduction of air can promote the evaporation of residual water in the crystallization tube, so that the thionaphthene impurities in the crystal can be removed faster and more thoroughly.

[0050] In another possible implementation, when determining the first crystal thickness of each crystal tube based on the image, the first determination module is specifically configured to:

[0051] Performing edge detection on the image to obtain a crystal outline of each crystal tube, wherein the crystal outline is composed of a plurality of line segments connected;

[0052] Determine the minimum distance from each inner convex point of the crystal to the central axis of the crystal tube from the crystal outline, wherein the inner convex point is the endpoint of each line segment closest to the central axis;

[0053] A third difference between a preset radius and the minimum distance is calculated, wherein the preset radius is the radius of the crystal tube, and the third difference represents a first crystal thickness of each crystal tube.

[0054] In another possible implementation, when determining the required heating time based on the first crystal thickness and purity, the first determining module is specifically configured to:

[0055] Determining the maximum value of the first crystal thickness from the first crystal thicknesses of all crystal tubes;

[0056] Calculating an average value of the first crystal thickness, and calculating a fourth difference between the maximum value and the average value;

[0057] determining a second amount of target crystal thicknesses where the first crystal thickness is greater than the average value;

[0058] determining a score based on the second quantity, the fourth difference, the purity, and the respective corresponding first coefficients;

[0059] A target preset score interval in which the score is located is determined from a plurality of preset score intervals, each preset score interval corresponds to a preset heating time, and the preset heating time of the target preset score interval is determined as the required heating time.

[0060] In another possible implementation, the calculation module, when calculating the dripping rate of the thionaphthene in real time based on the video information, is specifically used to:

[0061] Determine a first number of thionaphthene droplets generated at the bottom of each crystal tube in each frame;

[0062] Determine the total number of thionaphthene droplets generated by all crystal tubes in each frame based on the first number;

[0063] A preset number of consecutive frames is determined, and a total number of thionaphthene droplets in the preset number of consecutive frames is calculated, wherein the total number represents the drop rate.

[0064] In another possible implementation, the second control module, when controlling the flushing device to introduce water into the crystallization tube and controlling the ventilation device to introduce air into the crystallization tube based on the first difference and the second difference, is specifically configured to:

[0065] Determine a ratio of the second difference to the first crystal thickness, determine a third number whose ratio is less than a preset ratio, and determine a ratio of the third number to the total number of crystal tubes;

[0066] Determine the variance of the second difference of each crystal tube, and determine the impurity removal quality score based on the proportion, the first difference, the variance and the second coefficients corresponding to each of them;

[0067] The duration of introducing the water flow and the duration of introducing the air are determined based on the impurity removal quality score.

[0068] In another possible implementation, a conduit corresponds to the top of each crystallization tube, each of the conduits is provided with a valve, the flushing device and the ventilation device are both connected to the conduit, and the second control module, when determining the duration of introducing the water flow and the duration of introducing the air based on the impurity removal quality score, is specifically used to:

[0069] Determine a reference flushing time and a reference air conduction time based on the impurity removal quality score;

[0070] Determine the compensatory water flushing time and the compensatory air conduction time of each crystallization tube based on the ratio and the first crystal thickness;

[0071] Obtaining the duration of the introduced water flow of each crystal tube based on the reference flushing duration and the compensation flushing duration;

[0072] The air introduction time of each crystallization tube is obtained based on the reference air introduction time and the compensation air introduction time.

[0073] In another possible implementation, the device further includes:

[0074] A third determination module is used to determine the sum of the number of target crystal tubes for which the second difference is lower than a preset minimum difference;

[0075] The output module is used to output a prompt message when the sum of the quantity is higher than a preset maximum quantity.

[0076] In a third aspect, the present application provides an electronic device, which adopts the following technical solution:

[0077] An electronic device, comprising:

[0078] at least one processor;

[0079] Memory;

[0080] At least one application, wherein at least one application is stored in a memory and configured to be executed by at least one processor, and at least one is configured to: execute a remote control method for a refined naphthalene dynamic crystallizer as shown in any possible implementation of the first aspect.

[0081] In a fourth aspect, the present application provides a computer-readable storage medium, which adopts the following technical solution:

[0082] A computer-readable storage medium, when the computer program is executed in a computer, enables the computer to execute the remote control method of a refined naphthalene dynamic crystallizer as described in any one of the first aspects.

[0083] In summary, the present application includes at least one of the following beneficial technical effects:

[0084] The purity of the naphthalene raw material and the image of the inner wall of each crystallization tube of the crystallizer after the crystallization of the naphthalene raw material are completed are obtained. The purity reflects the content of thionaphthene in the naphthalene raw material. The image can show the crystallization of the inner wall. The first crystal thickness of each crystallization tube is determined based on the image. The larger the first crystal thickness, the deeper the position of thionaphthene in the inner wall of the crystallization tube may be. The required heating time is determined based on the first crystal thickness and the purity. The first crystal thickness is proportional to the required heating time. The lower the purity, the more thionaphthene there is and the longer the required heating time is. The temperature control device is controlled to raise the medium to a preset temperature that can melt thionaphthene but not naphthalene, and then the crystallizer is raised to the preset temperature. Video information of the top of the separation chamber at the bottom of the crystallizer is obtained. The video information can show the dripping of thionaphthene in the crystallization. The dripping rate of thionaphthene is calculated in real time based on the video information. When the dripping rate is less than the preset rate, it means that thionaphthene is dripping less and less, and the thionaphthene content is increasing. It is also getting less and less, entering the final stage, so the current image of the inner wall of the crystallization tube and the current heating time are obtained, and the first difference between the required heating time and the current heating time is determined. The required heating time has not been reached but the thionaphthene drips less and less, indicating that the thionaphthene in the crystal is not removed thoroughly enough, so the second crystal thickness of each crystallization tube is determined based on the current image, and the second difference between the first crystal thickness and the second crystal thickness is determined. The second difference characterizes the melting condition of thionaphthene. Based on the first difference and the second difference, the flushing device is controlled to introduce water into the crystallization tube and the ventilation device is controlled to introduce air into the crystallization tube. The medium in the temperature control device melts the crystals on the inner wall from the outside to the inside. The introduction of water can melt the crystals from the inside to the outside, which can make the impurity thionaphthene melt and drip faster. The introduction of air can promote the evaporation of residual water in the crystallization tube, so that the thionaphthene impurities in the crystal can be removed faster and more thoroughly. BRIEF DESCRIPTION OF THE DRAWINGS

[0085] Figure 1 It is a flow chart of a remote control method of a refined naphthalene dynamic crystallizer according to an embodiment of the present application.

[0086] Figure 2 This is a specific example diagram of determining the minimum distance from the inner bump to the central axis of the crystal tube according to an embodiment of the present application.

[0087] Figure 3 It is a structural schematic diagram of a remote control system of a refined naphthalene dynamic crystallizer according to an embodiment of the present application.

[0088] Figure 4 It is a structural schematic diagram of an electronic device according to an embodiment of the present application.

[0089] Figure numerals: 2, inner wall of crystallization tube; 3, crystallization; 4, inner convex point; 5, minimum distance. DETAILED DESCRIPTION

[0090] The present application is further described in detail below in conjunction with the accompanying drawings.

[0091] After reading this specification, those skilled in the art may make non-creative modifications to this embodiment as needed, but such modifications are protected by patent law as long as they are within the scope of the claims of this application.

[0092] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0093] In addition, the term "and / or" in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article, unless otherwise specified, generally means that the associated objects before and after are in an "or" relationship.

[0094] The embodiments of the present application are further described in detail below in conjunction with the drawings in the specification.

[0095] The embodiment of the present application provides a remote control method for a dynamic crystallizer of refined naphthalene, which is executed by an electronic device, which can be a server or a terminal device, wherein the server can be an independent physical server, or a server cluster or distributed system composed of multiple physical servers, or a cloud server providing cloud computing services. The terminal device can be a smart phone, a tablet computer, a laptop computer, a desktop computer, etc., but is not limited thereto. The terminal device and the server can be directly or indirectly connected via wired or wireless communication, which is not limited in the embodiment of the present application. Figure 1 As shown, the method includes step S101, step S102, step S103, step S104 and step S105, wherein:

[0096] S101, obtaining the purity of the naphthalene raw material and the image of the inner wall of each crystallization tube of the crystallizer after the naphthalene raw material is crystallized.

[0097] For the embodiment of the present application, the staff installs a first camera device above the crystallizer in advance, and the first camera device collects images of the inner wall of each crystallization tube along the axial direction of the inner wall of the crystallizer downward. The naphthalene raw material used for processing refined naphthalene is sampled and tested in advance by the staff, and the purity of the naphthalene raw material is obtained and stored in an electronic device. The first camera device is connected to the electronic device by wire, and the electronic device obtains the purity of the naphthalene raw material and the image of the inner wall of each crystallization tube of the crystallizer after the crystallization of the naphthalene raw material is completed. The purity of the naphthalene raw material reflects the content of the impurity thiophene, and the image can characterize the crystallization condition of the inner wall of the crystallization tube.

[0098] S102, determining a first crystal thickness of each crystal tube based on the image, and determining a required heating time based on the first crystal thickness and purity.

[0099] For the embodiments of the present application, the crystals are attached to the inner wall of the crystallization tube, and the electronic device determines the first crystal thickness of each crystallization tube based on the image. The first crystal thickness and the purity of the naphthalene raw material determine the required heating time. The lower the purity, the more impurity thiophene contained in the crystals, and the thicker the crystals, the longer the time required to penetrate the inner wall and the thickness of the crystals to heat the crystals in order to melt all the impurity thiophene in the crystals.

[0100] S103, controlling the temperature control device to raise the medium to a preset temperature, raising the crystallizer to a preset temperature and obtaining video information of the top of the separation chamber at the bottom of the crystallizer.

[0101] The preset temperature is a temperature at which the thionaphthene in the crystal can reach the melting point.

[0102] For the embodiment of the present application, purification includes three stages: the crystallization stage, the material circulation pump flushes the pipeline, the temperature control device gradually cools down according to the pre-set temperature curve, and the temperature of the outer wall of the tube is controlled by the refrigerant and decreases at a certain rate of change until the liquid level of the storage tank drops to the preset value. At this time, the melt stops circulating, and the residual melt on the surface of the crystal layer is discharged by gravity. After a certain period of time, after the residual liquid is discharged, a sweating operation is performed, that is, the temperature of the temperature control device on the outer wall of the tube is gradually increased at a certain rate of change to a temperature slightly lower than the melting point of the product, so as to discharge the impurities wrapped on the surface of the crystal layer and between the crystals, and further purify the crystallized product. Finally, a melting operation is performed, that is, the temperature of the temperature control device on the outer wall of the tube is continued to be increased to slightly higher than the melting point of the product, so as to melt the high-purity product on the inner wall of the tube and discharge it into the product tank below.

[0103] During the sweating process of purifying refined naphthalene, the temperature control device passes the heated medium into the outer wall above the crystallizer. The temperature of the medium heats up the crystals in the crystallization tube in the crystallizer through heat conduction, so that the crystals can be heated and melted from the outside to the inside. The impurity thiophene in the crystals melts and drips downward under the action of its own gravity.

[0104] A second camera device is installed on the inner wall of the separation chamber. The second camera device is at an upward looking angle, which is convenient for collecting video information of the impurity thionaphthene dripping from the top of the separation chamber at the bottom of the crystallizer. The second camera device is wired to the electronic device. The melting point of the impurity thionaphthene in the crystal is lower than the melting point of naphthalene. Therefore, the electronic device controls the temperature control device to raise the medium to a preset temperature that can make the impurity thionaphthene in the crystal reach the melting point but will not melt the naphthalene, thereby raising the crystallizer to the preset temperature. In addition, the electronic device obtains video information from the top of the separation chamber at the bottom of the crystallizer, and the video information can reflect the situation of the impurity thionaphthene in the crystal melting and dripping downward.

[0105] S104, calculating the dripping rate of thionaphthene in real time based on the video information.

[0106] For the embodiment of the present application, the impurity thionaphthene in the crystals is melted after reaching a preset temperature, thereby changing from crystals to liquid and then dripping downwards. The electronic device calculates the dripping rate of thionaphthene in real time based on the video information. The smaller the dripping rate, the less thionaphthene is melted.

[0107] S105, when the dripping rate is less than the preset rate, obtaining the current image of the inner wall of the crystal tube and the current heating time, and determining a first difference between the required heating time and the current heating time.

[0108] For the embodiment of the present application, the electronic device determines the size of the dripping rate and the preset rate. When the dripping rate is lower than the preset rate, the electronic device obtains the current image of the inner wall of the crystal tube through the first camera device. When the temperature control device is turned on, the electronic device records the turn-on time. When the dripping rate is lower than the preset rate, the current time is obtained, and the difference between the current time and the turn-on time is the current heating time.

[0109] The electronic device determines a first difference based on the required heating time and the current heating time. The required heating time is the heating time required to melt most of the thionaphthene. When the dripping rate is less than the preset rate, it means that less thionaphthene in the crystal is melted, or it is melted but less drips. However, the current heating time does not reach the required heating time. Failure to reach the required heating time means that some thionaphthene trapped inside cannot be precipitated, so it means that the impurity removal of thionaphthene is not thorough enough. The larger the first difference, the shorter the melting time of the impure thionaphthene and the less impurity thionaphthene precipitated.

[0110] S106, determining a second crystal thickness of each crystal tube based on the current image, and determining a second difference between the first crystal thickness and the second crystal thickness.

[0111] For the embodiment of the present application, the electronic device determines the second crystal thickness of each crystal tube based on the current image, and determines the second difference between the first crystal thickness and the second crystal thickness. The second difference characterizes the melting condition of thiophanate in each crystal tube. The larger the second difference, the more thiophanate is melted.

[0112] S107, based on the first difference and the second difference, controlling the flushing device to introduce water into the crystallization tube and controlling the ventilation device to introduce air into the crystallization tube.

[0113] For the embodiment of the present application, the first difference represents the lack of melting time of the impurity thionaphthene, and the second difference represents the melting condition of thionaphthene. The electronic device controls the flushing device to introduce water into the crystallization tube and controls the ventilation device to introduce air into the crystallization tube based on the first difference and the second difference. The introduced water flow can take away the thionaphthene that has melted but not dripped in the inner wall, and the introduced air can evaporate the water droplets remaining after the water flow is introduced, and can also blow out the thionaphthene remaining in the inner wall. The required heating time is determined by the purity of the naphthalene raw material and the first crystal thickness, the temperature control device is controlled to melt the impurity thionaphthene on the inner wall of the crystallization tube, and the rate at which the impurity thionaphthene drips downwards is determined, and the first difference between the required heating time and the current heating time is determined, and the second difference is determined by comparing the change in crystal thickness before and after. Based on the first difference and the second difference, the flushing device is controlled to introduce water into the crystallization tube and the ventilation device is controlled to introduce air into the crystallization tube, so that the impurity thionaphthene that has not melted in the crystal or has melted but has not dripped in time is discharged downward by the water flow, and the air can accelerate the evaporation of residual water in the crystallization tube, so that the thionaphthene impurities in the crystal can be removed faster and more thoroughly.

[0114] In a possible implementation of the embodiment of the present application, in step S102, the first crystal thickness of each crystal tube is determined based on the image, specifically including step S1021 (not shown in the figure), step S1022 (not shown in the figure), and step S1023 (not shown in the figure), wherein:

[0115] Step S1021, edge detection is performed on the image to obtain the crystal contour of each crystal tube.

[0116] Among them, the crystal outline is composed of multiple line segments.

[0117] For the embodiments of the present application, the impurity thionaphthene is an irregular crystal embedded in the naphthalene crystal and attached to the inner wall of the crystal tube. Therefore, the electronic device performs edge detection on the image to obtain the crystal outline of each crystal tube. The crystal outline includes multiple line segments, and the multiple line segments are connected to form the crystal outline.

[0118] Step S1022, determining the minimum distance between all inner protrusions and the central axis of the crystal tube from the crystal contour.

[0119] The inner convex point is the endpoint of each line segment that is closest to the central axis.

[0120] For the embodiments of the present application, the crystal profile is an irregular tooth-shaped profile, such as Figure 2 As shown, the crystal 3 is attached to the inner wall 2 of the crystal tube, and the electronic device determines all the line segments that constitute the crystal outline from the crystal outline, determines the endpoint closest to the central axis in each line segment as the inner convex point 4, and determines the minimum distance 5 between all the inner convex points 4 and the central axis of the crystal tube, and the minimum distance 5 represents the radius of the minimum circle where the crystal outline is located.

[0121] Step S1023, calculating a third difference between a preset radius and the minimum distance, where the preset radius is the radius of the crystal tube.

[0122] The third difference represents the first crystal thickness of each crystal tube.

[0123] For the embodiment of the present application, the centers of the minimum circle where the crystal contour is located and the circle of the crystal tube are both the points where the central axis of the crystal tube is located. The difference between the two radii represents the crystal thickness. The electronic device calculates the third difference between the minimum distance and the radius of the crystal tube. The third difference represents the first crystal thickness of each crystal tube.

[0124] In other possible implementations, the maximum distance between all inner protrusions and the central axis of the crystallization tube may be determined, and the difference between the preset radius and the maximum distance may be determined as the first crystallization thickness.

[0125] In a possible implementation of the embodiment of the present application, the required heating time is determined based on the first crystal thickness and purity in step S102, specifically including step S1024 (not shown in the figure), step S1025 (not shown in the figure), step S1026 (not shown in the figure), step S1027 (not shown in the figure) and step S1028 (not shown in the figure), wherein:

[0126] Step S1024, determining the maximum value of the first crystal thickness from the first crystal thicknesses of all crystal tubes.

[0127] For the embodiment of the present application, the first crystal thickness of each crystallization tube in the crystallizer may be different. The electronic device compares the first crystal thickness of all crystallization tubes and determines the maximum value of the first crystal thickness. The maximum value represents the maximum thickness of the crystals generated in all crystallization tubes.

[0128] Step S1025, calculating an average value of the first crystal thickness, and calculating a fourth difference between the maximum value and the average value.

[0129] For the embodiment of the present application, the first crystal thickness in each crystal tube is different, so the electronic device calculates the average value of all first crystal thicknesses through the average value formula. The average value represents the average level of crystallization of the crystal tube and reflects the overall crystallization situation.

[0130] The electronic device calculates a fourth difference between the maximum value and the average value, wherein the fourth difference represents a degree of difference between an extreme value of the crystal thickness and an average value.

[0131] Step S1026, determining a first number of target crystal thicknesses whose first crystal thickness is greater than the average value.

[0132] For the embodiment of the present application, the electronic device screens out the target crystal thicknesses whose first crystal thickness is greater than the average value, and counts the first number of all target crystal thicknesses, where the first number reflects the proportion of crystal thicknesses that are too thick.

[0133] Step S1027, determining a score based on the first quantity, the fourth difference, the purity, and the respective corresponding first coefficients.

[0134] For the embodiments of the present application, the first quantity, the fourth difference, and the purity are all important factors for determining the required heating time. The first quantity characterizes the proportion of crystal thickness exceeding the average value, and the fourth difference characterizes the degree of difference between the maximum value and the average value of the crystal thickness. The first quantity and the fourth difference are positively correlated with the required heating time. The more the first quantity or the larger the fourth difference, the longer the time required for crystallization heating. The purity characterizes the content of thiocarbamide impurities. The lower the purity, the more thiocarbamide impurities there are and the longer the required heating time. Therefore, the electronic device determines the score based on the first quantity, the fourth difference, the purity, and the corresponding first coefficients. For example, the first quantity is 15, the fourth difference is 0.4 mm, and the purity is 0.96. The first quantity, the fourth difference, the purity, and the corresponding first coefficients are 0.06, 8, and -3, respectively. Therefore, the electronic device calculates the score as 15×0.06+0.4×8+0.96×(-3)=1.22.

[0135] Step S1028, determining a target preset score interval where the score is located from a plurality of preset score intervals, each preset score interval corresponding to a preset heating time, and determining the preset heating time of the target preset score interval as the required heating time.

[0136] For the embodiment of the present application, each preset score interval corresponds to a preset heating time, which is stored in advance in the electronic device. The electronic device determines a target preset score interval in which the score is located from multiple preset score intervals, and determines the preset heating time corresponding to the target preset score interval as the required heating time. The higher the score, the longer the required heating time.

[0137] In a possible implementation of the embodiment of the present application, in step S104, the dripping rate of thionaphthene is calculated in real time based on the video information, which specifically includes step S1041 (not shown in the figure), step S1042 (not shown in the figure) and step S1043 (not shown in the figure), wherein:

[0138] Step S1041, determining the second number of thionaphthene droplets generated at the bottom of each crystal tube in each frame.

[0139] For the embodiment of the present application, the video information can reflect the dripping of thionaphthene, and the electronic device divides the video information into each frame, inputs each frame into the trained network model for feature recognition, and determines the second number of thionaphthene droplets generated at the bottom of each crystal tube in each frame, and the second number reflects the melting of thionaphthene impurity on the inner wall of each crystal tube at the same time point. The network model can be a convolutional neural network model, a recurrent neural network model, or other network models.

[0140] Step S1042, determining the total number of thionaphthene droplets generated by all crystal tubes in each frame based on the second number.

[0141] For the embodiment of the present application, the electronic device statistically sums the second numbers of all crystal tubes to obtain the total number of thiocarbamide droplets generated by all crystal tubes in each frame. The larger the total number, the more thiocarbamide is melted in all crystal tubes at the same time.

[0142] Step S1043, determining a preset number of consecutive frames, and calculating the total number of thionaphthene droplets in the preset number of consecutive frames.

[0143] Here, the sum represents the dripping rate.

[0144] For the embodiment of the present application, the electronic device determines a preset number of continuous frame images, which represent the video information per unit time. The preset number can be 24 or 20. The specific number can be determined through historical experiments and stored in the electronic device.

[0145] The electronic device sums up the total number of thionaphthene droplets in a preset number of continuous frames to obtain a total, and the total represents the dripping rate. The larger the total, the greater the dripping rate, and the faster the thionaphthene melts.

[0146] In a possible implementation of the embodiment of the present application, in step S106, based on the first difference and the second difference, the flushing device is controlled to introduce water into the crystallization tube and the ventilation device is controlled to introduce air into the crystallization tube, which specifically includes step S1061 (not shown in the figure), step S1062 (not shown in the figure) and step S1063 (not shown in the figure), wherein:

[0147] Step S1061, determining the ratio of the second difference to the first crystal thickness, determining a third number whose ratio is less than a preset ratio, and determining the ratio of the third number to the total number of crystal tubes.

[0148] For the embodiment of the present application, the second difference characterizes the melting condition of thionaphthene, and the electronic device determines the ratio of the second difference to the first crystal thickness, which characterizes the amount of thionaphthene impurity removed in each crystal tube. When the ratio is less than the preset ratio, it means that the amount of thionaphthene impurity removed from this part of the crystal tube is not enough, and thionaphthene impurity still exists in the crystals on the inner wall. Therefore, the electronic device determines a third number whose ratio is less than the preset ratio, and determines the ratio of the third number to the total number of crystal tubes. The larger the ratio, the more crystal tubes whose impurities are not thoroughly removed.

[0149] Step S1062, determining the variance of the second difference of each crystal tube, and determining the impurity removal quality score based on the proportion, the first difference, the variance and the respective corresponding second coefficients.

[0150] For the embodiment of the present application, the electronic device uses the variance formula to determine the variance of the second difference of each crystal tube. The larger the variance, the different the progress of impurity removal of each crystal tube, and the greater the difference in the progress of impurity removal.

[0151] The larger the first difference is, the greater the time difference from the required heating time is, and the crystallization on the inner wall of the crystallization tube may end after only a part of the impurity thionaphthene is precipitated, indicating that the impurity thionaphthene is not completely precipitated. The proportion reflects the number of crystallization tubes that are not thoroughly impurity-removed, and the variance represents the difference in the impurity removal progress of the crystallization tube. The three are important factors affecting the impurity removal quality of the impurity thionaphthene. Therefore, the electronic device determines the impurity removal quality score based on the proportion, the first difference, the variance and the corresponding second coefficients. For example, the proportion is 0.6, the first difference is 10s, and the variance is 0.64. The second coefficients corresponding to the proportion, the first difference and the variance are 7, 0.6 and 8 respectively. The electronic device calculates the impurity removal quality score as 0.6×7+10×0.6+0.64×8=15.32.

[0152] Step S1063, determining the duration of introducing water flow and the duration of introducing air based on the impurity removal quality score.

[0153] For the embodiments of the present application, the higher the impurity removal score is, the less thorough the removal of the impurity thionaphthene in the crystals is. The medium heats up and melts the crystals in the tube from the outside to the inside through the outer wall of the tube. The impurity removal score reflects the depth of melting of the crystals from the outside to the inside. Therefore, the electronic device determines the duration of introducing water flow and the duration of introducing air based on the impurity removal score. Water flow at a preset temperature is introduced into the crystallization tube. The medium transfers heat on the outer wall of the crystallization tube. Water transfers heat on the surface of the crystal, which can heat up and melt the crystals from the inside to the outside, so that the internal thionaphthene is precipitated. The introduction of air at a preset temperature can accelerate the blowing downward of the impurity thionaphthene that has melted but failed to drip, and can also accelerate the evaporation of water remaining in the inner wall, reducing the impurity removal time, and enabling the high-purity refined naphthalene to be dried and collected faster. The higher the impurity removal score is, the longer the duration of the required water flow and air introduction is.

[0154] In a possible implementation of the embodiment of the present application, a conduit corresponds to the top of each crystallization tube, and a valve is provided on each conduit to control the duration of water flow and the duration of air. The flushing device and the ventilation device are both connected to the conduit. In step S1063, the duration of introducing water flow and the duration of introducing air are determined based on the impurity removal quality score, and specifically include step S1 (not shown in the figure), step S2 (not shown in the figure), step S3 (not shown in the figure) and step S4 (not shown in the figure), wherein,

[0155] Step S1, determining a reference flushing time and a reference air conduction time based on the impurity removal quality score.

[0156] For the embodiment of the present application, each preset impurity removal quality score interval corresponds to a different flushing time and air conduction time. The electronic device determines the target impurity removal quality score interval in which the impurity removal quality score is located, and determines the corresponding benchmark flushing time and benchmark air conduction time.

[0157] Step S2, determining the compensation water flushing time and the compensation air conduction time of each crystal tube based on the ratio and the first crystal thickness.

[0158] For the embodiments of the present application, the ratio characterizes the amount of impurity thiophene removed in each crystallization tube, and the first crystal thickness is the thickness of the crystal in each crystallization tube. The smaller the ratio, the less impurity thiophene is removed. The melting conditions in each crystallization tube are different. The worse the melting rate, the more compensation time for flushing and air conduction is required. The thicker the first crystal thickness, the longer the time for deep melting and crystallization from the inside to the outside, and the more compensation time for flushing and air conduction is required. Therefore, the electronic device determines the third score based on the ratio, the first crystal thickness and the respective third coefficients, and determines the compensatory flushing time and the compensatory air conduction time of each crystallization tube based on the third score.

[0159] Step S3, obtaining the duration of the water flow introduced into each crystal tube based on the reference flushing duration and the compensation flushing duration.

[0160] In the embodiment of the present application, the electronic device obtains the duration of the water flow introduced into each crystal tube by summing the reference flushing duration and the compensation flushing duration.

[0161] Step S4, obtaining the air introduction time of each crystal tube based on the reference air introduction time and the compensation air introduction time.

[0162] In the embodiment of the present application, the electronic device obtains the duration of introducing air into each crystal tube by summing the reference air conduction duration and the compensation air conduction duration.

[0163] In a possible implementation manner of the embodiment of the present application, the method further includes step S5 (not shown in the figure) and step S6 (not shown in the figure), wherein step S5 may be performed after step S106, wherein:

[0164] Step S5, determining the sum of the number of target crystal tubes whose second difference is lower than the preset minimum difference.

[0165] For the embodiment of the present application, the electronic device screens out the target crystallization tubes whose second difference is lower than the preset minimum difference, and counts the number and quantity of all target crystallization tubes. The preset minimum difference can be obtained based on historical experiments and stored in the electronic device. The number and quantity reflect the proportion of crystallization tubes with too low melting rate of the impurity thionaphthene in the crystallizer.

[0166] Step S6: When the sum of the quantities is higher than the preset maximum quantity, a prompt message is output.

[0167] For the embodiment of the present application, the electronic device determines the size of the sum of the quantity and the preset maximum quantity. When the sum of the quantity is higher than the preset maximum quantity, it means that there are too many crystal tubes with poor melting rate of the impurity thiophene in this batch of crystal tubes, and the expected effect cannot be achieved. Therefore, the electronic device needs to promptly output a prompt message containing "The melting rate of the crystal tube of the sum of the quantity of crystallizer XX is too low" to the staff's terminal device to facilitate further operations by the staff.

[0168] The above embodiment introduces a remote control method for a refined naphthalene dynamic crystallizer from the perspective of a method flow, and the following embodiment introduces a remote control device for a refined naphthalene dynamic crystallizer from the perspective of a virtual module or a virtual unit. For details, please refer to the following embodiment.

[0169] The present application embodiment provides a remote control device 60 for a refined naphthalene dynamic crystallizer, such as Figure 3 As shown, the remote control device 60 of the refined naphthalene dynamic crystallizer may specifically include:

[0170] The first acquisition module 601 is used to acquire the purity of the naphthalene raw material and the image of the inner wall of each crystallization tube of the crystallizer after the naphthalene raw material is crystallized;

[0171] A first determination module 602 is used to determine a first crystal thickness of each crystal tube based on the image, and determine a required heating time based on the first crystal thickness and purity;

[0172] The first control module 603 is used to control the temperature control device to raise the medium to a preset temperature, raise the crystallizer to a preset temperature and obtain video information of the top of the separation chamber at the bottom of the crystallizer, wherein the preset temperature is a temperature at which thionaphthene in the crystallizer reaches a melting point;

[0173] A calculation module 604, used for calculating the dripping rate of thionaphthene in real time based on the video information;

[0174] The second acquisition module 605 is used to acquire the current image of the inner wall of the crystal tube and the current heating time when the dripping rate is less than the preset rate, and determine the first difference between the required heating time and the current heating time;

[0175] A second determination module 606 is used to determine a second crystal thickness of each crystal tube based on the current image, and determine a second difference between the first crystal thickness and the second crystal thickness;

[0176] The second control module 607 is used to control the flushing device to introduce water into the crystallization tube and control the ventilation device to introduce air into the crystallization tube based on the first difference and the second difference.

[0177] The embodiment of the present application discloses a remote control device 60 for a refined naphthalene dynamic crystallizer, wherein a first acquisition module 601 acquires the purity of a naphthalene raw material and an image of the inner wall of each crystallization tube of the crystallizer after the crystallization of the naphthalene raw material is completed, the purity reflects the content of thiocarbamide in the naphthalene raw material, and the image can show the crystallization condition of the inner wall, a first determination module 602 determines the first crystal thickness of each crystallization tube based on the image, the greater the first crystal thickness, the deeper the position of thiocarbamide in the inner wall of the crystallization tube may be, the required heating time is determined based on the first crystal thickness and the purity, the first crystal thickness is proportional to the required heating time, and the lower the purity, the more thiocarbamide there is, and the longer the required heating time, the first control module 603 controls the temperature control device to raise the medium to a preset temperature that can melt thiocarbamide but not naphthalene, and then raises the crystallizer to a preset temperature, and obtains video information from the top of the separation chamber at the bottom of the crystallizer, the video information can show the dripping condition of thiocarbamide in the crystallization, the calculation module 604 calculates the dripping rate of thiocarbamide in real time based on the video information, and when the dripping rate is less than the preset When the rate is less than 0.05, it means that the thionaphthene drips less and less, and the thionaphthene content is also less and less, and it enters the final stage. Therefore, the second acquisition module 605 acquires the current image of the inner wall of the crystallization tube and the current heating time, and determines the first difference between the required heating time and the current heating time. If the required heating time is not reached but the thionaphthene drips less and less, it means that the thionaphthene in the crystal is not removed thoroughly enough. Therefore, the second determination module 606 determines the second crystal thickness of each crystallization tube based on the current image, and determines the second difference between the first crystal thickness and the second crystal thickness. The first difference and the second difference represent the melting condition of thionaphthene. The second control module 607 controls the flushing device to introduce water into the crystallization tube and controls the ventilation device to introduce air into the crystallization tube based on the first difference and the second difference. The medium in the temperature control device melts the crystals on the inner wall from the outside to the inside. The introduced water flow can melt the crystals from the inside to the outside, so that the impurity thionaphthene can be melted and dripped faster. The introduced air can promote the evaporation of residual water in the crystallization tube, so that the thionaphthene impurities in the crystals can be removed faster and more thoroughly.

[0178] In a possible implementation of the embodiment of the present application, the first determination module 602, when determining the first crystal thickness of each crystal tube based on the image, is specifically configured to:

[0179] Perform edge detection on the image to obtain the crystal outline of each crystal tube, which is composed of multiple line segments;

[0180] Determine the minimum distance from each inner convex point of the crystal to the central axis of the crystal tube from the crystal outline, the inner convex point being the end point of each line segment closest to the central axis;

[0181] A third difference between a preset radius and the minimum distance is calculated, the preset radius is the radius of the crystallization tube, and the third difference represents a first crystal thickness of each crystallization tube.

[0182] In a possible implementation of the embodiment of the present application, the first determination module 602, when determining the required heating time based on the first crystal thickness and purity, is specifically used to:

[0183] Determining the maximum value of the first crystal thickness from the first crystal thicknesses of all crystal tubes;

[0184] calculating an average value of the first crystal thickness, and calculating a fourth difference between the maximum value and the average value;

[0185] determining a second number of target crystal thicknesses for which the first crystal thickness is greater than the average value;

[0186] determining a score based on the second quantity, the fourth difference, the purity, and the respective corresponding first coefficients;

[0187] A target preset score interval is determined from a plurality of preset score intervals, each preset score interval corresponds to a preset heating time, and the preset heating time of the target preset score interval is determined as the required heating time.

[0188] In a possible implementation of the embodiment of the present application, the calculation module 604, when calculating the dripping rate of thionaphthene in real time based on the video information, is specifically used to:

[0189] Determine a first number of thionaphthene droplets generated at the bottom of each crystal tube in each frame;

[0190] Determine the total number of thionaphthene droplets generated by all crystal tubes in each frame based on the first number;

[0191] A preset number of consecutive frames is determined, and the total number of thionaphthene droplets in the preset number of consecutive frames is calculated, and the total number represents the drop rate.

[0192] In a possible implementation of the embodiment of the present application, the second control module 607, when controlling the flushing device to introduce water into the crystallization tube and controlling the ventilation device to introduce air into the crystallization tube based on the first difference and the second difference, is specifically used to:

[0193] Determine a ratio of the second difference to the first crystal thickness, determine a third number whose ratio is less than a preset ratio, and determine a ratio of the third number to the total number of crystal tubes;

[0194] Determine the variance of the second difference of each crystal tube, and determine the impurity removal quality score based on the proportion, the first difference, the variance and the second coefficient corresponding to each;

[0195] The duration of introducing the water flow and the duration of introducing the air are determined based on the impurity removal quality score.

[0196] In a possible implementation of the embodiment of the present application, a conduit corresponds to the top of each crystallization tube, each conduit is provided with a valve, and both the flushing device and the ventilation device are connected to the conduit. The second control module 607, when determining the duration of introducing the water flow and the duration of introducing the air based on the impurity removal quality score, is specifically used to:

[0197] Determine the benchmark flushing time and benchmark air conduction time based on the impurity removal quality score;

[0198] Determine the compensatory water flushing time and the compensatory air conduction time of each crystallization tube based on the ratio and the first crystal thickness;

[0199] The duration of the water flow introduced into each crystal tube is obtained based on the reference flushing duration and the compensation flushing duration;

[0200] The air introduction time of each crystallization tube is obtained based on the reference air introduction time and the compensation air introduction time.

[0201] In a possible implementation manner of the embodiment of the present application, the device 60 further includes:

[0202] A third determination module is used to determine the sum of the number of target crystal tubes for which the second difference is lower than a preset minimum difference;

[0203] The output module is used to output a prompt message when the quantity is higher than the preset maximum quantity.

[0204] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the remote control device 60 of the dynamic crystallizer of refined naphthalene described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here.

[0205] An electronic device is provided in an embodiment of the present application, such as Figure 4 As shown, Figure 4 The electronic device 70 shown includes: a processor 701 and a memory 703. The processor 701 and the memory 703 are connected, such as through a bus 702. Optionally, the electronic device 70 may also include a transceiver 704. It should be noted that in actual applications, the transceiver 704 is not limited to one, and the structure of the electronic device 70 does not constitute a limitation on the embodiments of the present application.

[0206] Processor 701 may be a CPU (Central Processing Unit), a general-purpose processor, a DSP (Digital Signal Processor), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array) or other programmable logic devices, transistor logic devices, hardware components or any combination thereof. It may implement or execute various exemplary logic blocks, modules and circuits described in conjunction with the disclosure of this application. Processor 701 may also be a combination that implements computing functions, such as a combination of one or more microprocessors, a combination of a DSP and a microprocessor, etc.

[0207] The bus 702 may include a path to transmit information between the above components. The bus 702 may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus. The bus 702 may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Figure 4 Only one thick line is used in the diagram, but it does not mean that there is only one bus or only one type of bus.

[0208] The memory 703 may be a ROM (Read Only Memory) or other types of static storage devices that can store static information and instructions, a RAM (Random Access Memory) or other types of dynamic storage devices that can store information and instructions, or an EEPROM (Electrically Erasable Programmable Read Only Memory), a CD-ROM (Compact Disc Read Only Memory) or other optical disk storage, optical disk storage (including compressed optical disk, laser disk, optical disk, digital versatile disk, Blu-ray disk, etc.), a magnetic disk storage medium or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of instructions or data structures and can be accessed by a computer, but is not limited thereto.

[0209] The memory 703 is used to store the application code for executing the solution of the present application, and the execution is controlled by the processor 701. The processor 701 is used to execute the application code stored in the memory 703 to implement the contents shown in the above method embodiment.

[0210] The electronic devices include, but are not limited to, mobile terminals such as mobile phones, laptop computers, digital broadcast receivers, PDAs (personal digital assistants), PADs (tablet computers), PMPs (portable multimedia players), vehicle-mounted terminals (such as vehicle-mounted navigation terminals), and fixed terminals such as digital TVs, desktop computers, etc. It can also be a server, etc. Figure 4 The electronic device shown is merely an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.

[0211] An embodiment of the present application provides a computer-readable storage medium, on which a computer program is stored. When the computer-readable storage medium is run on a computer, the computer can execute the corresponding content in the aforementioned method embodiment. Compared with the related art, in the embodiment of the present application, the purity of the naphthalene raw material and the image of the inner wall of each crystallization tube of the crystallizer after the crystallization of the naphthalene raw material are obtained, the purity reflects the content of thionaphthene in the naphthalene raw material, the image can show the crystallization of the inner wall, the first crystal thickness of each crystallization tube is determined based on the image, the greater the first crystal thickness, the deeper the position of thionaphthene in the inner wall of the crystallization tube may be, the required heating time is determined based on the first crystal thickness and the purity, the first crystal thickness is proportional to the required heating time, and the lower the purity, the more thionaphthene, the longer the required heating time, the temperature control device is controlled to raise the medium to a preset temperature that can melt thionaphthene but not naphthalene, and then the crystallizer is raised to the preset temperature, and the video information of the top of the separation chamber at the bottom of the crystallizer is obtained, the video information can show the dripping of thionaphthene in the crystallization, the dripping rate of thionaphthene is calculated in real time based on the video information, and when the dripping rate is less than the preset rate, it means that the thionaphthene drips more As the temperature decreases, the content of thionaphthene also decreases, and it enters the final stage. Therefore, the current image of the inner wall of the crystallization tube and the current heating time are obtained, and the first difference between the required heating time and the current heating time is determined. The required heating time has not been reached, but the thionaphthene drips less and less, indicating that the thionaphthene in the crystal is not removed thoroughly enough. Therefore, the second crystal thickness of each crystallization tube is determined based on the current image, and the second difference between the first crystal thickness and the second crystal thickness is determined. The second difference characterizes the melting condition of thionaphthene. Based on the first difference and the second difference, the flushing device is controlled to introduce water flow into the crystallization tube and the ventilation device is controlled to introduce air into the crystallization tube. The medium in the temperature control device melts the crystals on the inner wall from the outside to the inside. The introduction of water flow can melt the crystals from the inside to the outside, which can make the impurity thionaphthene melt and drip faster. The introduction of air can promote the evaporation of residual water in the crystallization tube, so that the thionaphthene impurities in the crystal can be removed faster and more thoroughly.

[0212] It should be understood that, although the steps in the flowchart of the accompanying drawings are displayed in sequence as indicated by the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least a part of the steps in the flowchart of the accompanying drawings may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and their execution order is not necessarily sequential, but can be executed in turn or alternately with other steps or at least a part of the sub-steps or stages of other steps.

[0213] The above description is only a partial implementation method of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. A remote control method for a refined naphthalene dynamic crystallizer, characterized in that: include: Acquire the purity of the naphthalene raw material and the image of the inner wall of each crystallization tube of the crystallizer after the naphthalene raw material is crystallized; Determine a first crystal thickness of each crystal tube based on the image, and determine a required heating time based on the first crystal thickness and purity; Controlling the temperature control device to raise the medium to a preset temperature, raise the crystallizer to a preset temperature, and obtain video information of the top of the separation chamber at the bottom of the crystallizer, wherein the preset temperature is a temperature at which thionaphthene in the crystallizer can reach a melting point; Calculating the dripping rate of the thionaphthene in real time based on the video information; When the dripping rate is less than a preset rate, acquiring a current image of the inner wall of the crystal tube and a current heating time, and determining a first difference between the required heating time and the current heating time; Determine a second crystal thickness of each crystal tube based on the current image, and determine a second difference between the first crystal thickness and the second crystal thickness; Based on the first difference and the second difference, controlling the flushing device to introduce water into the crystal tube and controlling the ventilation device to introduce air into the crystal tube; Wherein, determining the required heating time based on the first crystal thickness and purity includes: Determining the maximum value of the first crystal thickness from the first crystal thicknesses of all crystal tubes; Calculating an average value of the first crystal thickness, and calculating a fourth difference between the maximum value and the average value; determining a first number of target crystal thicknesses having a first crystal thickness greater than the average value; determining a score based on the first quantity, the fourth difference, the purity, and the respective corresponding first coefficients; Determine a target preset score interval in which the score is located from a plurality of preset score intervals, each preset score interval corresponds to a preset heating time, and determine the preset heating time of the target preset score interval as the required heating time; Wherein, controlling the flushing device to introduce water into the crystallization tube and controlling the ventilation device to introduce air into the crystallization tube based on the first difference and the second difference includes: Determine a ratio of the second difference to the first crystal thickness, determine a third number whose ratio is less than a preset ratio, and determine a ratio of the third number to the total number of crystal tubes; Determine the variance of the second difference of each crystal tube, and determine the impurity removal quality score based on the proportion, the first difference, the variance and the second coefficients corresponding to each of them; The duration of introducing the water flow and the duration of introducing the air are determined based on the impurity removal quality score.

2. The remote control method of a refined naphthalene dynamic crystallizer according to claim 1, characterized in that: The determining a first crystal thickness of each crystal tube based on the image comprises: Performing edge detection on the image to obtain a crystal outline of each crystal tube, wherein the crystal outline is composed of a plurality of line segments connected; Determine the minimum distance from each inner convex point of the crystal to the central axis of the crystal tube from the crystal outline, wherein the inner convex point is the endpoint of each line segment closest to the central axis; A third difference between a preset radius and the minimum distance is calculated, wherein the preset radius is the radius of the crystal tube, and the third difference represents a first crystal thickness of each crystal tube.

3. The remote control method of a refined naphthalene dynamic crystallizer according to claim 1, characterized in that: The real-time calculation of the dripping rate of the thionaphthene based on the video information comprises: Determining a second number of thionaphthene droplets generated at the bottom of each crystal tube in each frame; Determine the total number of thionaphthene droplets generated by all crystal tubes in each frame based on the second number; A preset number of consecutive frames is determined, and a total number of thionaphthene droplets in the preset number of consecutive frames is calculated, wherein the total number represents the drop rate.

4. The remote control method of a refined naphthalene dynamic crystallizer according to claim 1, characterized in that: There is a conduit corresponding to the top of each crystallization tube, each of the conduits is provided with a valve, the flushing device and the ventilation device are both connected to the conduit, and the duration of introducing water flow and the duration of introducing air based on the impurity removal quality score are determined, including: Determine a reference flushing time and a reference air conduction time based on the impurity removal quality score; Determine the compensatory water flushing time and the compensatory air conduction time of each crystallization tube based on the ratio and the first crystal thickness; Obtaining the duration of the introduced water flow of each crystal tube based on the reference flushing duration and the compensation flushing duration; The air introduction time of each crystallization tube is obtained based on the reference air introduction time and the compensation air introduction time.

5. The remote control method of a refined naphthalene dynamic crystallizer according to claim 1, characterized in that: The method further comprises: Determine the sum of the number of target crystal tubes for which the second difference is lower than a preset minimum difference; When the sum of the quantities is higher than a preset maximum quantity, a prompt message is output.

6. A remote control device for a refined naphthalene dynamic crystallizer, characterized in that: include: A first acquisition module is used to acquire the purity of the naphthalene raw material and the image of the inner wall of each crystallization tube of the crystallizer after the naphthalene raw material is crystallized; A first determination module, configured to determine a first crystal thickness of each crystal tube based on the image, and determine a required heating time based on the first crystal thickness and purity; A first control module is used to control the temperature control device to raise the medium to a preset temperature, raise the crystallizer to a preset temperature, and obtain video information of the top of the separation chamber at the bottom of the crystallizer, wherein the preset temperature is a temperature at which thionaphthene in the crystal can reach a melting point; A calculation module, used for calculating the dripping rate of the thionaphthene in real time based on the video information; A second acquisition module, for acquiring a current image of the inner wall of the crystal tube and a current heating time when the dripping rate is less than a preset rate, and determining a first difference between the required heating time and the current heating time; A second determination module, configured to determine a second crystal thickness of each crystal tube based on the current image, and determine a second difference between the first crystal thickness and the second crystal thickness; The second control module is used to control the flushing device to introduce water into the crystallization tube and control the ventilation device to introduce air into the crystallization tube based on the first difference and the second difference.

7. An electronic device, characterized in that: It includes: at least one processor; Memory; At least one application, wherein the at least one application is stored in the memory and configured to be executed by the at least one processor, and the at least one application is used to execute the remote control method of a naphthalene dynamic crystallizer according to any one of claims 1 to 5.

8. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed in a computer, the computer is caused to execute the remote control method for a refined naphthalene dynamic crystallizer according to any one of claims 1 to 5.

Images