Test device and method

Abstract

The present invention provides a testing device and method, wherein the device comprises: a testing probe; wherein the testing probe comprises a probe arm and a contact end arranged on the probe arm; the contact end comprises a contact head with an opening on one side and an inclined guide arm arranged at the open end of the contact head; the contact head is in contact and connected with a supporting column of a metal bump on a chip to be tested under the elastic guiding action of the inclined guide arm, so that the chip to be tested and the testing probe transmit signals through the supporting column. The above invention can complete the relevant tests on the chip without damaging the solder cap.

Description

Technical Field

[0001] The present invention relates to the field of chip detection technology, and more specifically, to a testing device and method. Background Art

[0002] In the field of semiconductor chip stacking technology, before a chip is formed or shipped, its related performance needs to be tested to achieve chip quality inspection, grading, and defective product screening. Currently, there are various ways to stack chips, such as HBM, Wide-IO, or HMC. When testing such chips, an external probe is required to contact the metal bumps on the chip to achieve the transmission of test signals and test results.

[0003] However, since the metal bumps on the chip are tiny and relatively fragile, using existing probes to directly perform contact tests on the metal bumps will damage the solder ends of the metal bumps, and the positioning error between the chip and the probe will also cause the probe and the solder end to collide, thereby affecting the subsequent bonding process and chip performance, and affecting product yield. In addition, using traditional probes and contact points for contact detection will also cause poor contact due to the size error between the probe and the contact point, affecting the accuracy of the test results.

[0004] Therefore, there is an urgent need for a chip testing solution that can achieve precise positioning between the chip and the test signal while ensuring conduction between the two, prevent damage to the solder end of the metal bump, and ensure effective contact between the probe and the detection point. Summary of the invention

[0005] In view of the above problems, the purpose of the present invention is to provide a testing device and method to solve the problem that the existing chip testing scheme causes solder end damage due to contact testing and dimensional errors, thereby affecting the test structure and chip performance.

[0006] The test device provided by the present invention comprises: a test probe; wherein the test probe comprises a probe arm and a contact end arranged on the probe arm; the contact end comprises a contact head with an opening on one side and an inclined guide arm arranged at the open end of the contact head; under the elastic guiding action of the inclined guide arm, the contact head contacts and conducts with the supporting column of the metal bump on the chip to be tested, so that the chip to be tested and the test probe transmit signals through the supporting column.

[0007] In addition, an optional technical solution is that the probe arm is distributed vertically, obliquely or in an arc shape; the contact end is distributed horizontally or obliquely; the contact head vertically penetrates the contact end, and the height of the contact head is less than the height of the support column.

[0008] In addition, an optional technical solution is to provide at least one tolerance slot at the bottom of the contact head away from the open end, and the opening of the tolerance slot extends into the contact head; when the contact head is subjected to external force, the gap size of the tolerance slot can be changed.

[0009] In addition, an optional technical solution is that at least one stress seam is provided inside the contact end; the stress seam is isolated from the contact head, and different stress seams are isolated from each other.

[0010] In addition, an optional technical solution is that the extension direction of the stress joint is consistent with the extension direction of the fault-tolerant joint; or, the extension direction of the stress joint is perpendicular to the extension direction of the fault-tolerant joint, and the length of the stress joint close to the contact head side is not less than the length of the stress joint away from the contact head side.

[0011] In addition, an optional technical solution is to provide at least one stress buffering slit inside the probe arm; the extension direction of the stress buffering slit is consistent with the extension direction of the probe arm, and different stress buffering slits are isolated from each other.

[0012] In addition, an optional technical solution is to provide an insulating layer inside the test probe, wherein the insulating layer is used to isolate the test probe to form two test ends; the two test ends cooperate to implement a Kelvin test on the chip to be tested.

[0013] In addition, an optional technical solution is that the stress buffering seams are distributed on both sides of the insulation layer.

[0014] In addition, an optional technical solution is that the probe holder is a PCB, and the test probe is connected to an external test system via the PCB; and the chip to be tested is tested via the test system.

[0015] On the other hand, the present invention also provides a testing method, which uses the above-mentioned testing device to test the chip to be tested, and the method includes: adjusting the relative position between the test probe and the chip to be tested so that the contact end of the test probe is located on one side of the support column; controlling the chip to be tested to move horizontally toward the side close to the test probe, or controlling the test probe to move horizontally toward the side of the chip to be tested until the support column is in contact with the contact head under the action of the inclined guide arm; sending a test signal to the chip to be tested through the test probe, and completing the test of the chip to be tested through the test signal.

[0016] Using the above-mentioned testing device and method, the test probe is set to two parts, a probe arm and a contact end. The contact end includes a contact head with an opening on one side and an inclined guide arm arranged at the open end of the contact head. When the test probe is in contact with the support column, the support column can perform position elastic fault tolerance under the action of the inclined guide arm, thereby ensuring that the support column can accurately enter the contact head and ensuring effective contact between the test probe and the support column. This can not only avoid direct contact between the test probe and the solder cap, ensure the integrity of the shape of the solder cap, and avoid the subsequent process and performance being affected by damage to the solder cap, but also ensure the effectiveness of contact during the test process and improve the accuracy of the test.

[0017] In order to achieve the above and related purposes, one or more aspects of the present invention include the features that will be described in detail later. The following description and the accompanying drawings describe some exemplary aspects of the present invention in detail. However, these aspects indicate only some of the various ways in which the principles of the present invention can be used. In addition, the present invention is intended to include all these aspects and their equivalents. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] By referring to the following description in conjunction with the accompanying drawings, and with a more comprehensive understanding of the present invention, other objects and results of the present invention will become more apparent and easy to understand. In the accompanying drawings:

[0019] Figure 1 is a schematic diagram of a partial structure of a testing device according to an embodiment of the present invention;

[0020] Figure 2 A schematic diagram of the structure of a test probe according to an embodiment of the present invention;

[0021] Figure 3 is a schematic diagram of the structure of a chip to be detected according to an embodiment of the present invention;

[0022] Figure 4 is a schematic diagram of the result after the angle of the test probe is adjusted according to an embodiment of the present invention;

[0023] Figure 5 for Figure 4 A top view of the test probe and metal bumps shown;

[0024] Figure 6 A schematic diagram of a structure in which an isolation layer is provided for a test probe according to an embodiment of the present invention;

[0025] Figure 7 A schematic diagram of the structure of setting a fault-tolerant seam for a test probe according to an embodiment of the present invention;

[0026] Figure 8 A schematic diagram of a structure in which a stress joint is arranged in a test probe according to an embodiment of the present invention;

[0027] Fig. 9 A schematic diagram of the structure of the distribution of fault-tolerant joints and stress joints according to an embodiment of the present invention;

[0028] Fig.10 A schematic diagram of the distribution structure of fault-tolerant joints and stress joints according to another embodiment of the present invention;

[0029] Fig.11 is a schematic structural diagram of a stress buffer joint according to an embodiment of the present invention;

[0030] Fig.12 is a schematic structural diagram of a stress buffer joint according to another embodiment of the present invention;

[0031] Fig.13 is a schematic structural diagram of a stress buffer joint and an isolation layer according to an embodiment of the present invention;

[0032] Fig.14 is a schematic diagram of the structure of a probe arm according to an embodiment of the present invention;

[0033] Fig.15 is a schematic diagram of a probe arm structure according to another embodiment of the present invention;

[0034] Fig.16 FIG. 4 is a flow chart of a testing method according to an embodiment of the present invention.

[0035] The reference numerals therein include: probe arm 11, stress buffer seam 111, contact end 12, inclined guide arm 121, contact head 122, fault tolerance seam 123, stress seam 124, stress seam 125, metal bump 2, solder cap 21, support column 22, insulation layer 3, chip protection layer 4.

[0036] The same reference numerals throughout the drawings indicate similar or corresponding features or functions. DETAILED DESCRIPTION

[0037] In the following description, for the purpose of illustration, in order to provide a comprehensive understanding of one or more embodiments, many specific details are set forth. However, it is apparent that these embodiments may also be implemented without these specific details. In other examples, for ease of describing one or more embodiments, known structures and devices are shown in the form of block diagrams.

[0038] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0039] It will be understood by those skilled in the art that, unless otherwise stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present invention refers to the presence of the features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof. It should be understood that the term "and / or" used herein includes any unit and all combinations of one or more associated listed items.

[0040] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as generally understood by those skilled in the art in the field to which the present invention belongs. It should also be understood that terms such as those defined in common dictionaries should be understood to have meanings consistent with the meanings in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless defined as herein.

[0041] To describe the testing device and method of the present invention in detail, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0042] Figures 1 to 15 The overall or partial schematic structure of the testing device according to the embodiment of the present invention is shown from different angles.

[0043] like Figures 1 to 15As shown together, the test device of the embodiment of the present invention includes a test probe; wherein the metal bump 2 of the chip to be tested includes a support column 22 arranged on the chip protection layer 4 and a solder cap 21 located at the end of the support column 22. Generally, the material of the support column 22 is slightly harder than that of the solder cap 21. For example, the support column 22 can be made of copper, which is less susceptible to damage than the solder cap 21. In order to avoid direct contact between the traditional test probe 1 and the solder cap 21, the test probe in the embodiment of the present invention includes a probe arm 11 and a contact end 12 arranged on the probe arm 11. The contact end 12 includes a contact head 122 with an opening on one side and an inclined guide arm 121 arranged at the open end of the contact head 122. Under the elastic guiding action of the inclined guide arm 121, the contact head 122 contacts and conducts with the support column 22, so that the chip to be tested and the test probe transmit signals through the support column 22, that is, the transmission of the test signal is realized through the support column 22 part, thereby ensuring the integrity of the solder cap 21 at its end.

[0044] The test probe can be arranged on the probe bracket, and the inclined guide arm 121 can be symmetrically distributed on both sides of the contact head 122 and extend obliquely in an outwardly expanding manner. The test probe can adopt a structural member with a certain elasticity, so that during the contact process between the test probe and the support column, it can overcome a certain contact stress through its own elasticity. The setting of the inclined guide arm 121 can calibrate the position of the test probe and the support column 22, so as to accept the error tolerance within a certain size range, such as Figure 1 The dotted line on the right side of the metal bump 2 shows the position movement range of the metal bump 2, and the left side is the junction between the probe arm 11 and the contact end 12. In the process of contact and conduction between the test probe and the support column 22, the inclined guide arm 121 can be used to ensure that the support column 22 can completely enter the contact head 122, thereby achieving effective contact between the support column 22 and the contact head 122, thereby improving the test accuracy and avoiding the occurrence of test failures due to contact problems.

[0045] It can be known that the inclination angle or length of the inclined guide arm 121 can be set according to the size of the support column 22, which can overcome the poor contact caused by the size error.

[0046] In addition, the contact head 122 can adopt the arc-shaped slot structure shown in the accompanying drawings, or it can be set to a planar structure or a contact structure of other shapes. Of course, it can also be set accordingly according to the shape of the support column 22. It can contact the support column 22 and achieve signal conduction, and is not limited to the arc-shaped slot form shown in the accompanying drawings.

[0047] In the testing device of the present invention, the probe arm 11 can be directly connected to the probe bracket, and the probe arm 11 can be vertically distributed, inclinedly distributed or arc-shaped distributed, such as Fig.14 and Fig.15As shown, the setting direction of the contact end 12 arranged at the end of the probe arm 11 is different from the setting direction of the probe arm 11. It can be horizontally distributed or inclined at a certain angle. When the contact end 12 contacts the support column 22, the probe arm 11 can avoid the metal bump 2; in other words, the contact end 12 can extend outward at the end of the probe arm 11, and the contact end 12 is fitted with the support column 22 to achieve contact and conduction between the test probe and the chip to be tested.

[0048] Among them, the contact head 122 is vertically arranged to penetrate the contact end 12, and the curvature of the contact head 122 is adapted to the size of the support column 22. The height of the contact head 122 is smaller than the height of the support column 22, thereby avoiding contact and collision between the contact end 12 and the solder cap 21 during the test contact process to ensure the structural integrity of the solder cap 21.

[0049] It should be noted that, since the sizes of the support pillars 22 of different chips to be tested may be different, in order to improve the versatility of the test device and ensure the clamping fit between the contact head 122 and the support pillar 22, at least one fault tolerance gap 123 may be provided at the bottom of the contact head 122 away from its open end. Figure 7 Only one structure of the fault-tolerant slot is shown, and the opening of the fault-tolerant slot 123 extends to the inside of the contact head 122. When the contact head 122 is subjected to external force, for example, when it contacts the support column 22, the size of the support column 22 is slightly larger, thereby generating an outward squeezing force on the contact head 122. The gap of the fault-tolerant slot 123 will be increased by the force, and then the gap size of the fault-tolerant slot 123 is variable, which can effectively tolerate the size difference between the support column 22 and the contact head 122. It is not only suitable for various types of chips to be tested, but also can realize effective contact between the support column 22 and the contact head 122 through the setting of the fault-tolerant slot 123, thereby improving the flexibility and accuracy of the test device.

[0050] In addition, at least one stress seam may be provided inside the contact end 12, and the stress seam is isolated from the contact head 122. When multiple stress seams are provided, different stress seams are also isolated from each other. The stress seam is mainly used to reduce the stress effect on the test probe caused by the force when the test probe contacts the chip to be tested; wherein the extension direction of the stress seam 124 may be set to be consistent with the extension mode of the fault tolerance seam 123, such as Figure 8 Alternatively, the extension direction of the stress joint 125 and the extension direction of the fault tolerance joint 123 are set to be perpendicular to each other, as shown in FIG. Fig.10 As shown; alternatively, the stress joint can also be set to a plurality of circular pore structures, or a honeycomb pore structure, etc.

[0051] Among them, when the extension direction of the stress seam 125 is perpendicular to the extension direction of the fault tolerance seam 123, the lengths of each stress seam can be set to be different, wherein the length of the stress seam close to the contact head 122 is not less than the length of the stress seam away from the contact head 122, thereby forming a trapezoidally distributed stress seam array to improve the stress suppression effect.

[0052] In another specific embodiment of the present invention, at least one stress buffering slit 111 may be provided inside the probe arm 11 of the test probe. Fig.11 and Fig.12 As shown, the extension direction of the stress buffering slit 111 is consistent with the extension direction of the probe arm 11, and different stress buffering slits 111 are isolated from each other. When the probe arm 11 is inclined, the lengths of the stress buffering slits 111 can also be set to be different.

[0053] In order to further improve the accuracy of chip testing, an insulating layer 3 may be provided inside the test probe, such as Figure 6 and Fig.13 As shown, the test probe is isolated by the insulating layer 3 to form two test ends, and the two test ends are used to implement the Kelvin test on the chip to be tested. The Kelvin test method can eliminate the loss of the test probe during the signal transmission process and improve the accuracy of the test. It can be seen that when a stress buffering slit 111 is provided in the probe arm 11, the stress buffering slit 111 can be provided on one side of the insulating layer 3 or distributed on both sides of the insulating layer 3.

[0054] In another specific embodiment of the present invention, the test probes can be distributed in a regular array on the probe holder. The distribution of the test probes can be set accordingly according to the positions of the metal bumps 2 on the chip to be tested. The positions of the test probes in adjacent rows or columns are staggered to reduce mutual interference between the test probes.

[0055] In addition, the test probe can be connected to the external test system through the PCB. Under special needs, an adapter board can also be set up, that is, the test probe is connected to the PCB through the adapter board, and the PCB is connected to the external test system, and then the chip to be tested is tested through the test system. In other words, the test probe 1 can be fixed on the PCB through the probe holder or the probe holder can be directly set to the PCB. During the test process, the external test system is connected to the test probe 1 through the PCB to realize the transmission of the test signal.

[0056] It should be noted that for the above-mentioned components, for example, the shape of the probe arm, the stress buffer seam, the fault tolerance seam, the stress seam, the insulating layer, etc., the present invention will no longer describe such embodiments one by one, and various combinations and improvements can be made without departing from the content of the present invention.

[0057] Corresponding to the above-mentioned testing device, the present invention also provides a testing method, which uses the above-mentioned testing device to test the chip to be tested.

[0058] Specifically, Fig.16 The schematic flow of the testing method according to the embodiment of the present invention is shown.

[0059] like Fig.16 As shown, the testing method of the embodiment of the present invention includes:

[0060] S100: adjusting the relative position between the test probe and the chip to be tested so that the contact end of the test probe is located at one side of the support column;

[0061] S200: Control the chip to be tested to move horizontally toward the testing probe, or control the testing probe to move horizontally toward the chip to be tested, until the support column is in contact with the contact head under the action of the inclined guide arm;

[0062] S300: Sending a test signal to the chip to be tested through a test probe, and completing the test of the chip to be tested through the test signal.

[0063] Specifically, when using the test device to test the chip to be tested, the probe holder and the test probe thereon are first moved to one side of the metal bump on the chip to be tested by the driving device. The process can also drive the chip to be tested to move by the driving device, and adjust the relative position between the test probe and the chip to be tested to a specified position; then, the chip to be tested is controlled to move horizontally in a direction close to the test probe side, or the test probe is controlled to move horizontally toward the chip to be tested, until the support column is in contact with the contact head under the action of the inclined guide arm; finally, a test signal is sent to the chip to be tested by the test probe, and the test of the chip to be tested is completed by the test signal.

[0064] It should be noted that the embodiments of the above-mentioned test method can refer to the description in the test device embodiment, which will not be described in detail here.

[0065] According to the test device and method of the present invention, the test probe is configured as a probe arm and a contact end. The contact end includes a contact head with an opening on one side and an inclined guide arm arranged at the open end of the contact head. When the test probe contacts and conducts with the support column, the support column can perform position tolerance under the action of the inclined guide arm, thereby ensuring that the support column can accurately enter the contact head and ensuring effective contact between the test probe and the support column. In addition, a stress buffer seam can be arranged in the probe arm, and components such as a fault-tolerant seam and a stress seam can be arranged in the contact end to improve the mechanical properties and test accuracy of the test probe. The present invention can not only avoid direct contact between the test probe and the solder cap, ensure the integrity of the appearance of the solder cap, and avoid the influence of subsequent processes and performance due to damage to the solder cap, but also ensure the effectiveness of contact during the test and improve the accuracy of the test.

[0066] The test device and method according to the present invention are described above by way of example with reference to the accompanying drawings. However, it should be understood by those skilled in the art that various improvements can be made to the test device and method proposed by the present invention without departing from the content of the present invention. Therefore, the protection scope of the present invention should be determined by the content of the attached claims.

Claims

1. A testing device, characterized in that: include: A test probe; wherein, The test probe comprises a probe arm and a contact end arranged on the probe arm; The contact end comprises a contact head with an opening on one side and an inclined guide arm arranged at the open end of the contact head; The contact head is in contact with the support column of the metal bump on the chip to be tested under the elastic guidance of the inclined guide arm, so that the chip to be tested and the test probe can transmit signals through the support column; At least one fault tolerance slot is provided at the bottom of the contact head away from the open end, and the opening of the fault tolerance slot extends into the contact head; When the contact head is subjected to external force, the gap size of the fault-tolerant gap can be changed.

2. The testing device according to claim 1, characterized in that: The probe arms are distributed vertically, obliquely or in an arc shape; The contact ends are distributed horizontally or obliquely; The contact head is vertically arranged to penetrate the contact end, and the height of the contact head is smaller than the height of the support column.

3. The testing device according to claim 1, characterized in that: At least one stress seam is provided inside the contact end; The stress seam and the contact head are isolated from each other, and different stress seams are isolated from each other.

4. The testing device according to claim 3, characterized in that: The extension direction of the stress joint is consistent with the extension direction of the fault tolerance joint; or, The extension direction of the stress joint is perpendicular to the extension direction of the fault tolerance joint, and the length of the stress joint on the side close to the contact head is not less than the length of the stress joint on the side away from the contact head.

5. The testing device according to claim 1, characterized in that: At least one stress buffering seam is provided inside the probe arm; The extension direction of the stress buffering slit is consistent with the extension direction of the probe arm, and different stress buffering slits are isolated from each other.

6. The testing device according to claim 5, characterized in that: An insulating layer is provided inside the test probe, and the insulating layer is used to isolate the test probe to form two test ends; The two test terminals are used together to implement a Kelvin test on the chip to be tested.

7. The testing device according to claim 6, characterized in that: The stress buffering gaps are respectively distributed on both sides of the insulating layer.

8. The testing device according to claim 1, characterized in that: The probe holder is a PCB, and the test probe is connected to an external test system via the PCB; The chip to be tested is tested by the testing system.

9. A testing method, characterized in that: Using the testing device according to any one of claims 1 to 8 to test the chip to be tested, the method comprising: Adjusting the relative position between the test probe and the chip to be tested so that the contact end of the test probe is located on one side of the support column; Control the chip to be tested to move horizontally toward the test probe, or control the test probe to move horizontally toward the chip to be tested, until the support column is in contact with the contact head under the action of the inclined guide arm; A test signal is sent to the chip to be tested through a test probe, and the test of the chip to be tested is completed through the test signal.

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