Optical device and manufacturing method thereof

Abstract

Optical devices and methods of manufacture are presented in which a mirror structure is utilized to transmit optical signals to and receive optical signals from the optical device. In an embodiment, the mirror structure receives an optical signal from outside of the optical device and directs the optical signal through at least one mirror to an optical component of the optical device. The embodiment of the invention also relates to an optical device and a manufacturing method thereof.

Description

Technical Field

[0001] Embodiments of the present application relate to optical devices and methods for manufacturing the same. Background Art

[0002] Electrical signaling and processing is a technology used for signal transmission and processing. In recent years, optical signaling and processing has been used in an increasing number of applications, especially due to the use of optical fiber related applications for signal transmission.

[0003] Optical signals and processing are often combined with electrical signals and processing to provide sophisticated applications. For example, optical fibers can be used for long-range signal transmission, and electrical signals can be used for short-range signal transmission and processing and control. Thus, a device is formed that integrates long-range optical components and short-range electrical components for conversion between optical and electrical signals, as well as processing of optical and electrical signals. Thus, a package may include: an optical (photonic) die including an optical device and an electronic die including an electronic device. Summary of the invention

[0004] Some embodiments of the present application provide a method for manufacturing an optical device, the method comprising: attaching a first reflector structure to a first optical package, wherein, after attaching the first reflector structure, a first reflector within the first reflector structure is aligned with an edge coupler within the first optical package, and wherein, after attaching the first reflector structure, a first optical fiber is located within the first reflector structure.

[0005] Still other embodiments of the present application provide a method for manufacturing an optical device, the method comprising: placing an adhesive on a first optical package, wherein the first optical package comprises an edge coupler; bonding a first reflector structure to the adhesive, wherein after bonding the first reflector structure, a first reflector within the first reflector structure is aligned with the edge coupler; and connecting a second reflector structure to the first reflector structure, the second reflector structure comprising a second reflector and a first optical fiber.

[0006] Still other embodiments of the present application provide an optical device comprising: a first optical package; and a first reflector structure bonded to the first optical package, the first reflector structure comprising: a first reflector aligned with an edge coupler within the first optical package; and a first optical fiber. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] When read in conjunction with the accompanying drawings, various aspects of the disclosed embodiments can be best understood from the following detailed description. It should be noted that, in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, for clarity of discussion, the size of the various components may be arbitrarily increased or reduced.

[0008] Figures 1 to 9 The formation of a first optical package according to some embodiments is shown.

[0009] FIG. 10A to FIG. 10D Attachment of a first socket to a first optical package is shown in accordance with some embodiments.

[0010] FIG. 11A to FIG. 11C Attachment of a first reflector structure is shown according to some embodiments.

[0011] Fig.12 Transmission of a first optical signal is shown according to some embodiments.

[0012] FIG. 13A to FIG. 13B Attachment of a second mirror structure is shown in accordance with some embodiments.

[0013] Fig.14 Transmission of a first optical signal in a second mirror structure is shown according to some embodiments.

[0014] Figure 15 to Figure 16 An attachment process of a third reflector structure and a fourth reflector structure according to some embodiments is shown.

[0015] Fig.17 Attachment of a first optical package to an interposer substrate is shown in accordance with some embodiments.

[0016] Fig.18 Attachment of a first optical package to a substrate is shown according to some embodiments.

[0017] Fig.19 Attachment of a first optical package to a redistribution structure is shown according to some embodiments.

[0018] Fig. 20 An embodiment utilizing a fifth mirror structure and a sixth mirror structure in accordance with some embodiments is shown. DETAILED DESCRIPTION

[0019] The following disclosure provides many different embodiments or examples for realizing different features of the disclosed embodiments. Specific examples of components and arrangements are described below to simplify the disclosed embodiments. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first component above or on a second component may include an embodiment in which the first component and the second component are directly contacted, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not be in direct contact. In addition, the disclosed embodiments may repeat reference numerals and / or characters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0020] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or component to another (or additional) elements or components as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should likewise be interpreted accordingly.

[0021] Embodiments will now be discussed with respect to certain embodiments in which a reflector structure is utilized to route incoming and outgoing optical signals between an optical fiber and an edge coupler of a first optical package. However, the proposed embodiments are intended to be illustrative and are not intended to limit the proposed ideas to the precise embodiments described. Instead, the proposed ideas may be incorporated into a wide variety of embodiments, and all such embodiments may be included within the overall scope of the disclosed embodiments.

[0022] Reference now Figure 1 , showing an optical interposer 100 according to some embodiments (see Figure 5 ) is the initial structure. Figure 1 In the particular embodiment shown in FIG. 1 , the optical interposer 100 is a photonic integrated circuit (PIC) and at this stage comprises a first substrate 101, a first insulating layer 103 and a layer of material 105 for a first active layer 201 of a first optical component 203 ( Figure 1 Not shown separately, but the following Figure 2100). In an embodiment, at the beginning of the manufacturing process of the optical interposer 100, the first substrate 101, the first insulating layer 103, and the layer of material 105 for the first active layer 201 of the first optical component 203 may be collectively part of a silicon-on-insulator (SOI) substrate. First looking at the first substrate 101, the first substrate 101 may be a semiconductor material such as silicon or germanium, a dielectric material such as glass, or any other suitable material that allows structural support of the devices above.

[0023] The first insulating layer 103 may be a dielectric layer that separates the first substrate 101 from the first active layer 201 thereon, and in some embodiments, may additionally serve as a portion of a cladding material surrounding a subsequently fabricated first optical component 203 (discussed further below). In embodiments, the first insulating layer 103 may be silicon oxide, silicon nitride, germanium oxide, germanium nitride, combinations of these, etc., formed using methods such as implantation (e.g., to form a buried oxide (BOX) layer) or may be deposited onto the first substrate 101 using deposition methods such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, combinations of these, etc. However, any suitable material and fabrication method may be used.

[0024] The material 105 for the first active layer 201 is initially (before patterning) a conformal layer of the material of the first active layer 201 that will be used to begin fabricating the first optical component 203. In embodiments, the material 105 for the first active layer 201 may be a semi-transparent material that may be used as a core material for the desired first optical component 203, such as a semiconductor material such as silicon, germanium, silicon germanium, combinations of these, and the like, while in other embodiments, the material 105 for the first active layer 201 may be a dielectric material such as silicon nitride, and the like, but in other embodiments, the material 105 for the first active layer 201 may be a III-V material, a lithium niobate material, or a polymer. In embodiments where the material 105 for the first active layer 201 is deposited, the material 105 for the first active layer 201 may be deposited using methods such as epitaxial growth, chemical vapor deposition, atomic layer deposition, physical vapor deposition, combinations of these, and the like. In other embodiments where the first insulating layer 103 is formed using an implantation method, the material 105 of the first active layer 201 may initially be part of the first substrate 101 before the implantation process forms the first insulating layer 103. However, the material 105 of the first active layer 201 may be formed using any suitable material and manufacturing method.

[0025] Figure 2It is shown that once the material 105 for the first active layer 201 is prepared, the first optical component 203 for the first active layer 201 is manufactured using the material 105 for the first active layer 201. In an embodiment, the first optical component 203 of the first active layer 201 may include components such as optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, etc.), couplers (e.g., grating couplers, edge couplers of narrow waveguides with a width between about 1 nm and about 200 nm, etc.), directional couplers, optical modulators (e.g., Mach-Zehnder silicon photonic switches, micro-electromechanical switches, micro-ring resonators, etc.), amplifiers, multiplexers, demultiplexers, photoelectric converters (e.g., PN junctions), electro-optical converters, lasers, combinations of these, etc. However, any suitable first optical component 203 may be used.

[0026] In order to form the first active layer 201 of the first optical component 203 starting from the initial material, the material 105 for the first active layer 201 can be patterned into a desired shape of the first active layer 201 for the first optical component 203. In an embodiment, the material 105 for the first active layer 201 can be patterned using, for example, one or more photolithography masking and etching processes. However, any suitable method of patterning the material 105 for the first active layer 201 can be utilized. For some of the first optical components 203, such as waveguides or edge couplers, the patterning process can be all or at least a majority of the fabrication used to form these first optical components 203.

[0027] Figure 3 It is shown that for those components that utilize further manufacturing processes, such as Mach-Zehnder silicon photonic switches that utilize resistive heating elements, additional processing can be performed before or after patterning the material for the first active layer 201. For example, implantation processes, additional deposition and patterning processes for different materials (e.g., resistive heating elements, III-V materials for converters), combinations of all of these processes, etc. can be utilized to further assist in manufacturing various desired first optical components 203. In certain embodiments, and as Figure 3 As specifically shown in FIG. 1 , in some embodiments, epitaxial deposition of semiconductor material 301 such as germanium (for example, electrical / optical signal modulation and conversion) can be performed on patterned portions of material 105 of first active layer 201. In such embodiments, semiconductor material 301 can be epitaxially grown to help manufacture, for example, photodiodes for photoelectric converters. All such manufacturing processes and all suitable first optical components 203 can be manufactured, and all such combinations are fully intended to be included within the scope of the embodiments.

[0028] Figure 4It is shown that once the independent first optical component 203 of the first active layer 201 has been formed, the second insulating layer 401 can be deposited to cover the first optical component 203 and provide additional cladding material. In an embodiment, the second insulating layer 401 can be a dielectric layer that separates the independent components of the first active layer 201 from each other and from the structure above, and can additionally serve as another portion of the cladding material surrounding the first optical component 203. In an embodiment, the second insulating layer 401 can be silicon oxide, silicon nitride, germanium oxide, germanium nitride, combinations of these, etc. formed using a deposition method such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, combinations of these, etc. Once the material of the second insulating layer 401 has been deposited, the material can be flattened using, for example, a chemical mechanical polishing process to flatten the top surface of the second insulating layer 401 (in an embodiment where the second insulating layer 401 is intended to completely cover the first optical component 203) or to flatten the second insulating layer 401 and the top surface of the first optical component 203. However, any suitable material and manufacturing method can be used.

[0029] Figure 5 4 shows that once the first optical component 203 of the first active layer 201 has been fabricated and the second insulating layer 401 has been formed, a first metallization layer 501 is formed to electrically connect the first active layer 201 of the first optical component 203 to the control circuit, to each other, and to subsequently attached devices ( Figure 5 Not shown, but the following Figure 6 100 ). In an embodiment, the first metallization layer 501 is formed of alternating layers of dielectric material and conductive material and may be formed by any suitable process, such as deposition, damascene, dual damascene, etc. In a particular embodiment, there may be multiple metallization layers for interconnecting the various first optical components 203, but the exact number of first metallization layers 501 depends on the design of the optical interposer 100.

[0030] In addition, during the manufacture of the first metallization layer 501, one or more second optical components 503 may be formed as part of the first metallization layer 501. In some embodiments, the second optical components 503 of the first metallization layer 501 may include components such as couplers (e.g., edge couplers, grating couplers, etc.) for connecting to external signals, optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, etc.), optical modulators (e.g., Mach-Zehnder silicon photonic switches, micro-electromechanical switches, micro-ring resonators, etc.), amplifiers, multiplexers, demultiplexers, photoelectric converters (e.g., PN junctions), electro-optical converters, lasers, combinations of these, etc. However, any suitable optical components may be used for the one or more second optical components 503.

[0031] In an embodiment, the one or more second optical components 503 may be formed by initially depositing a material for the one or more second optical components 503. In an embodiment, the material for the one or more second optical components 503 may be a dielectric material such as silicon nitride, silicon oxide, a combination of these, or a semiconductor material such as silicon deposited using a deposition method such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, a combination of these, etc. However, any suitable material and any suitable deposition method may be utilized.

[0032] Once the material for the one or more second optical components 503 has been deposited or otherwise formed, the material can be patterned into a desired shape for the one or more second optical components 503. In an embodiment, the material for the one or more second optical components 503 can be patterned using, for example, one or more photolithographic masking and etching processes. However, any suitable method of patterning the material for the one or more second optical components 503 can be utilized.

[0033] For some of the one or more second optical components 503, such as waveguides or edge couplers, the patterning process may be all or at least a majority of the fabrication used to form these components. In addition, for those components that utilize further fabrication processes, such as Mach-Zehnder silicon photonic switches that utilize resistive heating elements, additional processing may be performed before or after patterning the material for the one or more second optical components 503. For example, implantation processes, additional deposition and patterning processes for different materials, combinations of all of these processes, and the like may be utilized to further assist in fabricating various desired one or more second optical components 503. All such fabrication processes and all suitable one or more second optical components 503 may be fabricated, and all such combinations are fully intended to be included within the scope of the embodiments.

[0034] Once the one or more second optical components 503 of the first metallization layer 501 have been fabricated, a first bonding layer 505 is formed over the first metallization layer 501. In an embodiment, the first bonding layer 505 may be used for dielectric-to-dielectric and metal-to-metal bonding. According to some embodiments, the first bonding layer 505 is formed of a first dielectric material 509 such as silicon oxide, silicon nitride, etc. The first dielectric material 509 may be deposited using any suitable method, such as CVD, high density plasma chemical vapor deposition (HDPCVD), PVD, atomic layer deposition (ALD), etc. However, any suitable material and deposition process may be utilized.

[0035] Once the first dielectric material 509 has been formed, a first opening is formed in the first dielectric material 509 to expose the conductive portion of the underlying layer in preparation for forming the first bonding pad 507 in the first bonding layer 505. Once the first opening has been formed in the first dielectric material 509, the first opening can be filled with a seed layer and a plated metal to form the first bonding pad 507 in the first dielectric material 509. The seed layer can be blanket deposited on the top surface of the first dielectric material 509 and the exposed conductive portion of the underlying layer and the sidewalls of the opening and the second opening. The seed layer can include a copper layer. The seed layer can be deposited using a process such as sputtering, evaporation, or plasma enhanced chemical vapor deposition (PECVD), depending on the desired material. The plated metal can be deposited on the seed layer by a plating process such as electroplating or chemical plating. The plated metal can include copper, copper alloys, etc. The plated metal can be a filling material. A barrier layer (not shown separately) can be blanket deposited on the top surface of the first dielectric material 509 and the sidewalls of the opening and the second opening before the seed layer. The barrier layer may include titanium, titanium nitride, tantalum, tantalum nitride, or the like.

[0036] After filling the first opening, a planarization process, such as CMP, is performed to remove the seed layer and excess portions of the plated metal, thereby forming a first bonding pad 507 in the first bonding layer 505. In some embodiments, a bonding pad via (not separately shown) may also be used to connect the first bonding pad 507 to the underlying conductive portion, and to connect the first bonding pad 507 to the first metallization layer 501 through the underlying conductive portion.

[0037] In addition, the first bonding layer 505 may also include one or more third optical components 511 incorporated into the first bonding layer 505. In such an embodiment, the one or more third optical components 511 may be manufactured using similar methods and similar materials as the one or more second optical components 503 (described above), such as by waveguides and other structures formed at least in part by deposition and patterning processes, prior to depositing the first dielectric material 509. However, any suitable structures, materials, and any suitable manufacturing methods may be utilized.

[0038] Figure 6A first bonding layer 505 is shown bonding a first semiconductor device 601 to an optical interposer 100. In some embodiments, the first semiconductor device 601 is an electronic integrated circuit (EIC, e.g., a device without optical devices) and may have a semiconductor substrate 603, a layer of active devices 605, an interconnect structure 607 thereon, a second bonding layer 609, and associated third bonding pads 611. In an embodiment, the semiconductor substrate 603 may be similar to the first substrate 101 (e.g., a semiconductor material such as silicon or silicon germanium), the active devices 605 may be transistors, capacitors, resistors, etc. formed above the semiconductor substrate 603, the interconnect structure 607 may be similar to the first metallization layer 501 (without optical components), the second bonding layer 609 may be similar to the first bonding layer 505, and the third bonding pads 611 may be similar to the first bonding pads 507. However, any suitable device may be utilized.

[0039] In an embodiment, the first semiconductor device 601 may be configured to work with the optical interposer 100 for a desired function. In some embodiments, the first semiconductor device 601 may be a high bandwidth memory (HBM) module, an xPU, a logic die, a 3DIC die, a CPU, a GPU, a SoC die, a MEMS die, a combination of these, etc. Any suitable device having any suitable function may be used, and all such devices are fully intended to be included within the scope of the embodiments.

[0040] In an embodiment, the first semiconductor device 601 and the first bonding layer 505 can be bonded using dielectric-to-dielectric and metal-to-metal bonding processes. In a specific embodiment utilizing dielectric-to-dielectric and metal-to-metal bonding processes, the process can begin by activating the surface of the second bonding layer 609 and the surface of the first bonding layer 505. As an example, activating the top surfaces of the first bonding layer 505 and the second bonding layer 609 can include dry processing, wet processing, plasma processing, exposure to an inert gas plasma, exposure to H 2 , exposure to N 2 , exposure to O 2 , combinations thereof, etc. In an embodiment using wet processing, for example, RCA cleaning may be used. In another embodiment, the activation process may include other types of processing. The activation process facilitates the bonding of the first bonding layer 505 and the second bonding layer 609.

[0041] After the activation process, the optical interposer 100 and the first semiconductor device 601 may be cleaned using, for example, chemical cleaning, and then the first semiconductor device 601 is aligned and placed in physical contact with the optical interposer 100. The optical interposer 100 and the first semiconductor device 601 are then subjected to heat treatment and contact pressure to bond the optical interposer 100 and the first semiconductor device 601. For example, the optical interposer 100 and the first semiconductor device 601 may be subjected to a pressure of about 200 kPa or less and a temperature between about 25° C. and about 250° C. to fuse the optical interposer 100 and the first semiconductor device 601. The optical interposer 100 and the first semiconductor device 601 may then be subjected to a temperature at or above the eutectic point of the material for the first bonding pad 507 and the third bonding pad 611, for example, between about 150° C. and about 650° C. to fuse the metals. In this manner, the optical interposer 100 and the first semiconductor device 601 form a dielectric-to-dielectric and metal-to-metal bonded device. In some embodiments, the bonded dies are subsequently baked, annealed, pressed, or otherwise processed to strengthen or complete the bond.

[0042] In addition, although specific processes have been described to initiate and strengthen bonding, these descriptions are intended to be illustrative and are not intended to limit the embodiments. Instead, any suitable combination of baking, annealing, pressing, or a combination of processes may be utilized. All such processes are fully intended to be included within the scope of the embodiments.

[0043] Figure 6 Additionally shown, once the first semiconductor device 601 has been bonded, a first gap fill material 613 is deposited to fill the space around the first semiconductor device 601 and provide additional support. In an embodiment, the first gap fill material 613 can be a material deposited to fill and overfill the space around the first semiconductor device 601, such as silicon oxide, silicon nitride, silicon oxynitride, combinations of these, etc. However, any suitable material and deposition method can be utilized.

[0044] Once the first gap-fill material 613 has been deposited, the first gap-fill material 613 may be planarized to expose the first semiconductor device 601. In an embodiment, the planarization process may be a chemical mechanical planarization process, a grinding process, etc. However, any suitable planarization process may be utilized.

[0045] Figure 7 Attachment of the first support substrate 701 to the first semiconductor device 601 and the first gap filling material 613 is shown. In an embodiment, the first support substrate 701 may be a support material transparent to the wavelength of light desired to be used, such as silicon, and may be bonded using, for example, an adhesive ( Figure 7However, in other embodiments, the first support substrate 701 may be bonded to the first semiconductor device 601 and the first gap filling material 613 using, for example, a bonding process. Any suitable method of attaching the first support substrate 701 may be used.

[0046] Figure 8 The first substrate 101 and optionally the first insulating layer 103 are shown removed, thereby exposing the first active layer 201 of the first optical component 203. In an embodiment, the first substrate 101 and the first insulating layer 103 may be removed using a planarization process, such as a chemical mechanical polishing process, a grinding process, one or more etching processes, combinations of these, etc. However, any suitable method may be used to remove the first substrate 101 and / or the first insulating layer 103.

[0047] Once the first substrate 101 and the first insulating layer 103 have been removed, the second active layer 801 of the fourth optical component 803 may be formed on the back side of the first active layer 201. In an embodiment, the second active layer 801 of the fourth optical component 803 may be formed using the second optical component 503 (described above with respect to the first metallization layer 501) with the first metallization layer 501. Figure 5 For example, the second active layer 801 of the fourth optical component 803 may be formed of alternating layers of a cladding material such as silicon oxide and a core material such as silicon nitride formed using deposition and patterning processes to form an optical component such as a waveguide.

[0048] Furthermore, in an embodiment, the fourth optical component 803 of the second active layer 801 may include an optical coupler to receive an optical signal and transmit the optical signal to and from the second active layer 801. For example, in a particular embodiment, the fourth optical component 803 may include one or more edge couplers (composed of Figure 8 However, any suitable coupler may be utilized.

[0049] Fig. 9 The formation of a first device through via (TDV) 901 and the formation of a third bonding layer 903 are shown to form a first optical package 900. In an embodiment, the first device through via 901 extends through the second active layer 801 and the first active layer 201 to provide a fast path for power, data, and ground through the optical interposer 100. In an embodiment, the first device through via 901 can be formed by initially forming a device through via opening in the optical interposer 100. The device through via opening can be formed by: applying and developing a suitable photoresist (not shown); and removing exposed portions of the second active layer 801 and the optical interposer 100.

[0050] Once the device via opening has been formed in the optical interposer 100, the device via opening may be lined with a liner. The liner may be, for example, an oxide formed from tetraethyl orthosilicate (TEOS) or silicon nitride, although any suitable dielectric material may alternatively be used. The liner may be formed using a plasma enhanced chemical vapor deposition (PECVD) process, although other suitable processes such as physical vapor deposition or thermal processes may also be used.

[0051] Once the liner has been formed along the sidewalls and bottom of the device via opening, a barrier layer (also not shown separately) can be formed, and the remainder of the device via opening can be filled with a first conductive material. The first conductive material can include copper, but other suitable materials can be utilized, such as aluminum, alloys, doped polysilicon, combinations thereof, and the like. The first conductive material can be formed by electroplating copper onto a seed layer (not shown), filling and overfilling the device via opening. Once the device via opening has been filled, excess liner, barrier layer, seed layer, and first conductive material on the outside of the device via opening can be removed by a planarization process such as chemical mechanical polishing (CMP), but any suitable removal process can be used.

[0052] Optionally, in some embodiments, once the first device via 901 has been formed, a second metallization layer ( Fig. 9 In an embodiment, the second metallization layer may be formed as described above with respect to the first metallization layer 501, such as alternating layers of dielectric material and conductive material using a damascene process, a dual damascene process, etc. In other embodiments, the second metallization layer may be formed using a plating process to form and shape the conductive material, and then cover the conductive material with a dielectric material. However, any suitable structure and manufacturing method may be utilized.

[0053] The third bonding layer 903 is formed to provide electrical connection between the optical interposer 100 and a subsequently attached device. In an embodiment, the third bonding layer 903 may be similar to the first bonding layer 505, such as having a third bonding pad 909 (similar to the first bonding pad 507) and even a fifth optical component 911 (similar to the third optical component 511). However, any suitable device may be utilized.

[0054] Fig. 9The placement of the first external connector 913 is additionally shown, and the first external connector 913 can be formed to provide a conductive area for contact between the third bonding pad 909 and other external devices. The first external connector 913 can be a conductive bump (e.g., C4 bump, ball grid array, micro bump, etc.) or a conductive column using materials such as solder and copper. In an embodiment where the first external connector 913 is a contact bump, the first external connector 913 may include a material such as tin, or other suitable materials such as silver, lead-free tin or copper. In an embodiment where the first external connector 913 is a tin solder bump, the first external connector 913 can be formed by initially forming a tin layer by common methods such as evaporation, electroplating, printing, solder transfer, ball placement, etc. Once the tin layer has been formed on the structure, reflow can be implemented to shape the material into a desired bump shape.

[0055] Fig. 10A 1 and 2. As shown, once the first optical package 900 has been formed, the first socket 1001 can be attached to the first optical package 900 (where the first optical package 900 is shown in simplified form for clarity). In an embodiment, the first socket 1001 can be used to attach the first reflector structure 1101 ( Fig. 10A Not shown, but in the following FIG. 11A to FIG. 11C ) to achieve two-dimensional edge coupling (see below for details). Fig.12 1001 to the first optical package 900; and one or more second connection parts 1005 to receive and hold the structure having the first reflector structure 1101. The first connection part 1003 and the second connection part 1005 may be formed as a single integral part, or the first connection part 1003 and the second connection part 1005 may be formed separately from each other and then connected together.

[0056] Observe the second connection portion 1005, which is used to receive, hold and position the first reflector structure 1101 in a specific position. In a specific embodiment, the second connection portion 1005 can include one or more sockets arranged in a single row, and the first reflector structure 1101 can be placed on the sockets. However, any suitable connection structure in any number or configuration can be utilized.

[0057] Fig. 10B1001 is a perspective view of a specific embodiment of the first socket 1001. As can be seen in this figure, the first connection portion 1003 serves as a support for two of the second connection portions 1005 in the receptacle configuration. Looking at the first connection portion 1003, the first connection portion can be a flat portion suitable for connecting the first socket 1001 to the first optical package 900. In a specific embodiment, the first connection portion 1003 can have a first width W between about 3 mm and about 8 mm. 1 and may have a first length L between about 3 mm and about 18 mm 1 However, any suitable dimensions may be utilized. However, any suitable number of second connecting portions 1005 and any suitable dimensions may be utilized.

[0058] Fig. 10C Another embodiment of the first socket 1001 is shown in which there is an additional second connection portion 1005 for helping to hold the first reflector structure 1101 to the first optical package 900. In this embodiment, instead of having a single row of two second connection portions 1005 (as above), Fig. 10B ), the first socket 1001 has at least four of the second connection portions 1005 arranged in multiple rows. Any suitable number of second connection portions 1005 arranged in any suitable configuration may be utilized.

[0059] Fig. 10D Yet another embodiment of the first socket 1001 is shown, in which the second connection portion 1005 is not in a socket structure, but is formed as a guide pin. For example, in this embodiment, the second connection portion 1005 can be formed as a cylindrical pin shape to help guide the first reflector structure 1101, and in the specific embodiment shown, the cylindrical pin shape can be arranged in a single row. However, any suitable shape and any suitable arrangement can be utilized.

[0060] Now return to Fig. 10A Once the first socket 1001 is prepared, the first socket 1001 can be attached to the first optical package 900 using a first adhesive 1007. In an embodiment, the first adhesive 1007 can be a removable adhesive, such as an adhesive film ultraviolet (UV) glue, or can be formed of other known adhesive materials. In an embodiment, the first adhesive 1007 can be pre-attached to the first connecting portion 1003 or the first optical package 900. Once the first adhesive 1007 is present in the desired position, the first socket 1001 and the first adhesive 1007 are placed in physical contact with the first optical package 900 to bond the first socket 1001 to the first optical package 900. However, any suitable process and material, or even a direct bonding process, can be utilized.

[0061] Fig.11A The first reflector structure 1101 is shown placed onto the first socket 1001. In an embodiment, the first reflector structure 1101 includes a first material 1103, a first reflector 1105, an optional first microlens 1107, and a first optical fiber 1109. In an embodiment, the first material 1103 may be a material transparent to the desired optical signal, such as SiO 2 , Si or polymer, wherein the first material 1103 has a first portion, once attached, extending along a first side or sidewall of the first optical package 900, and also has a second portion, once attached, extending over a second side or top surface of the first optical package 900, wherein the first side is perpendicular to the second side. However, any suitable material may be used.

[0062] In an embodiment, the first reflector structure 1101 further includes one or more openings 1111 in the first material 1103. The openings 1111 are used to receive the second connection portion 1005 of the first socket 1001 during placement of the first reflector structure 1101 and to hold the first reflector structure 1101 in place. In an embodiment, the one or more openings 1111 may be formed using any suitable process, such as etching, drilling, or forming the one or more openings 1111 during manufacturing and forming the first material 1103.

[0063] The first reflector 1105 or lens can be placed or formed within the first material 1103. In embodiments, the first reflector 1105 can include one or more single reflectors, or can include a series of one or more reflectors that are part of an integral structure. In embodiments where the first reflector 1105 is preformed, the first reflector 1105 can be placed and bonded into one or more openings located within the first material 1103. Any suitable method of placing and retaining the first reflector 1105 can be used.

[0064] In embodiments where the first reflector 1105 is formed within the first material 1103, the first reflector 1105 may be formed by initially patterning the first material 1103 to form a recess. In embodiments, the recess may be formed using one or more photolithographic masking and etching processes, such as one or more wet etching processes or dry etching processes. However, any suitable process may be utilized.

[0065] Once the groove has been formed, a first reflector 1105 can be formed along the sidewalls of the groove. In an embodiment, the first reflector 1105 can be a single layer of a reflective material, such as aluminum copper, copper, gold, aluminum, titanium nitride, combinations of these, etc., or can be a multilayer structure, such as a Bragg reflector including alternating layers of different materials, such as alternating layers of silicon dioxide and amorphous silicon. The independent material of the first reflector 1105 can be deposited using any suitable method, such as chemical vapor deposition, physical vapor deposition, plating, combinations of these, etc., and the independent layer can then be further patterned (e.g., to remove horizontal portions of the deposited material) using, for example, photolithographic masking and etching processes. However, any suitable material and method can be used to form the first reflector 1105 along the sidewalls of the groove.

[0066] In addition, if the formation of the first reflector 1105 does not completely fill the groove, the groove can be filled and planarized. In an embodiment, the groove can be filled and / or overfilled with a material similar to the first material 1103 deposited using a method such as chemical vapor deposition, followed by a planarization process such as a chemical mechanical polishing process. However, any suitable material and any suitable process can be utilized.

[0067] Optionally, the first microlens 1107 may be placed and / or formed adjacent to the first reflector 1105 to help focus the optical signal between the first reflector 1105 and the first optical package 900 ( Fig.11A Not shown, but the following Fig.12 100 ). In an embodiment, the first microlens 1107 may be a collimating or converging lens having a refractive index between about 1 and about 3.5, and may be formed by shaping the material of the first material 1103 using a masking and etching process. However, any suitable process may be utilized.

[0068] The first optical fiber 1109 can be positioned within the first material 1103 to transmit optical signals to the first reflector 1105 and receive optical signals from the first reflector 1105. In an embodiment, the first optical fiber 1109 can include a core material surrounded by one or more cladding materials, such as glass. Optionally, a surrounding covering material can be used to surround the outer cladding material to provide additional protection.

[0069] The first optical fiber 1109 may be positioned within the first material 1103 such that the first end of the first optical fiber 1109 is parallel to the sidewall of the first optical package 900. Thus, the optical signal transmitted through the first optical fiber 1109 is directed to the first reflector 1105 instead of being directed to, for example, a grating coupler located within the first optical package 900. In an embodiment, the first material 1103 may be patterned to have an opening for the first optical fiber 1109, and the first optical fiber 1109 may be inserted into the first material 1103 and held in place with, for example, optical glue (not shown separately).

[0070] Once the first reflector structure 1101 has been prepared, the first reflector structure 1101 can be attached to the first optical package 900 using the first socket 1001. In an embodiment, the first reflector structure 1101 is physically placed on the first socket 1001 so that the second connecting portion 1005 enters the corresponding opening 1111 located in the first material 1103. Therefore, the first reflector structure 1101 is held in place using friction and can be removed. In other embodiments, the first reflector structure 1101 can be bonded to the first socket 1001 using glue. Any other suitable method of fixing the first reflector structure 1101 can be used.

[0071] In some embodiments, the first reflector structure 1101 may be formed to have a second width W between about 3 mm and about 8 mm. 2 and a second length L between about 1 mm and about 18 mm 2 ( Fig.11A Not shown, but the following Fig. 11B In addition, the first reflector structure 1101 may have a first height H between about 0.5 mm and about 1 mm. 1 However, any suitable dimensions may be utilized.

[0072] Fig. 11B 1 shows a top view of the connections around the first reflector structure 1101 and the first optical package 900. In particular, Fig. 11B In the embodiment shown in , a single one of the first reflector structures 1101 can be attached to the first receptacle 1001. In addition, within the first reflector structure 1101, a two-dimensional array of first optical fibers 1109 in a fiber array unit (FAU) (wherein, for clarity, each individual optical fiber is not shown) is utilized together with a plurality of first reflectors 1105 (not shown individually) to transmit optical signals between the first optical package 900 and, for example, a ferrule 1113.

[0073] In an embodiment, the sleeve 1113 can be used to receive an array of first optical fibers 1109 (from a device located outside the figure), align the independent first optical fibers 1109, and connect the first optical fibers 1109 to the first reflector structure 1101. In an embodiment, the sleeve 1113 can be a mechanical transfer (MT) sleeve made of a material that can be used to protect, support and align the independent first optical fibers 1109. However, any suitable material can be used. In an embodiment, the first optical fiber 1109 can be inserted into an opening located in the sleeve 1113. Once inserted, a glue material, such as epoxy, silicone, a photocurable elastic polymer, a combination of these, etc., can be injected or otherwise placed into the opening in the sleeve 1113 to fix the first optical fiber 1109 in the sleeve 1113. In addition, a curing process such as light curing, heat curing, etc. can be used to harden the glue material. In this embodiment, the sleeve 1113 helps to fix the first optical fiber 1109 so that the optical signal provided by the first optical fiber 1109 can be transmitted.

[0074] In this top view of this embodiment, the first optical package 900 may have a third width W between about 5 mm and about 20 mm. 3 and may have a third length L between about 5 mm and about 25 mm 3 With such dimensions, the first socket 1001 may have a first width W of about 8 mm. 1 and a first length L of about 18 mm 1 However, any suitable dimensions may be utilized.

[0075] Fig. 11C Another embodiment is shown where, instead of utilizing a single ferrule 1113, multiple separate ferrules 1113 may be utilized. Furthermore, where multiple separate ferrules 1113 are used, multiple separate arrays of first optical fibers 1109 and multiple separate first reflector structures 1101 are also used. Any suitable number of ferrules 1113 and any suitable number of separate first reflector structures 1101 may be used. All such structures and any suitable number are fully intended to be included within the scope of the embodiments.

[0076] In this embodiment, the first optical package 900 may remain the same as described above with respect to Fig. 11C The embodiment described above has similar size and shape (for example, it can have a third width W 3 and the third length L 3 In such an embodiment, there may be four of the first reflector structures 1101, and each of the first reflector structures 1101 may have a first width W of about 3 mm. 1 and may have a first length L of about 3 mm 1However, any suitable dimensions may be utilized.

[0077] Fig.12 shows the first optical signal (at Fig.12 1201) between the first optical fiber 1109 and the edge coupler 805 within the fourth optical component 803 of the first optical package 900. In an embodiment, the first optical signal 1201 transmitted to the first optical package 900 leaves the first optical fiber 1109 and propagates through the first material 1103 to the first reflector 1105. The first reflector 1105 reflects the first optical signal 1201 toward the first microlens 1107, which modulates the first optical signal 1201 and directs the first optical signal 1201 to the fourth optical component 803. The edge coupler 805 within the fourth optical component 803 receives the first optical signal 1201 and helps move the first optical signal 1201 to the fourth optical component 803.

[0078] Similarly, the second optical signal ( Fig.12 The second optical signal may be transmitted from the first optical package 900 to the first optical fiber 1109 (not shown separately). In an embodiment, the second optical signal may traverse a similar path as the first optical signal 1201, but in the opposite direction. For example, the second optical signal may be transmitted from the edge coupler 805 within the fourth optical component 803 and pass through the first microlens 1107, so that the second optical signal hits the first reflector 1105. The first reflector 1105 then reflects the second optical signal toward the first optical fiber 1109, which receives the second optical signal and transmits them to an external device (not shown separately).

[0079] Of course, although the directions of the first optical signal 1201 and the second optical signal are described above as being received and transmitted by the edge coupler 805 within the fourth optical component 803, this is intended to be illustrative only and is not intended to limit the embodiments. Instead, the first reflector structure 1101 can be designed and used to direct the optical signal to any optical component within the first optical package 900. For example, the first reflector structure 1101 can direct the optical signal to the first optical component 203, the second optical component 503, or the third optical component 511. All such directions are fully intended to be included within the scope of the embodiments.

[0080] By utilizing the first reflector structure 1101, the optical signal can be transmitted through the edge coupler 805 located within the fourth optical component 803. Therefore, the use of grating couplers, which may limit the operating bandwidth and may be polarization sensitive, can be avoided. Without restrictions on the operating bandwidth, higher coupling efficiency can be obtained, resulting in greater bandwidth, polarization independence, and an overall more efficient device.

[0081] FIG. 13A to FIG. 13B A cross-sectional view and a top view of a second reflector structure 1301 are shown, respectively, which can be used to adjust the first optical signal 1201 and the second optical signal so that they can be received by an edge coupler instead of being received by a grating coupler. However, in this embodiment, instead of using a first reflector 1105 to reflect a signal from an optical fiber that is already placed parallel to the edge of the first optical package 900, the first optical fiber 1109 is placed parallel to the top surface of the first optical package 900, and a second reflector 1303 is used to reflect the optical signal toward the first reflector 1105.

[0082] Observe the second reflector 1303. The second reflector 1303 can be used as described above. FIG. 11A to FIG. 11C The second reflector 1303 may be formed and placed using materials and processes similar to those described above for the first reflector 1105. For example, the second reflector 1303 may be a reflector array or one or more independent reflectors placed within the first material 1103, or may be deposited within the first material 1103 using etching and deposition processes. However, any suitable method may be used to form and / or place the second reflector 1303.

[0083] Fig. 13B A top view of the array of second reflectors 1303 is shown (in Fig. 13B 1303). As can be seen in the figure, the second reflector 1303 is positioned and oriented to receive the optical signal from the first optical fiber 1109 and reflect the optical signal to the first reflector 1105, even if the orientation is such that the first reflector 1105 is offset relative to the second reflector 1303 in the top view (as shown in Fig. 13B Thus, any suitable orientation of the first reflector 1105 and the second reflector 1303 can direct light between the first optical fiber 1109 and the edge coupler of the fourth optical component 803.

[0084] Once the second reflector structure 1301 having the first reflector 1105 and the second reflector 1303 has been prepared, the second reflector structure 1301 can be attached to the first optical package 900 using the first socket 1001. In an embodiment, the second reflector structure 1301 is as described above with respect to Fig.11A Attached as described, such as by inserting the second connecting portion 1005 into an opening in the first material 1103 of the second reflector structure 1301. However, any suitable attachment method may be utilized.

[0085] Fig.14It is shown that in operation, the first optical fiber 1109 in this embodiment enters the second reflector structure 1301 (once the second reflector structure 1301 is attached to the first optical package 900) parallel to the top surface of the first optical package 900, so that the optical signal (e.g., the first optical signal 1201) leaving the first optical fiber 1109 is directed to the second reflector 1303. The first optical signal 1201 is then reflected by the second reflector 1303 toward the first reflector 1105. The first reflector 1105 receives the first optical signal 1201, and reflects the first optical signal 1201 through the optional first microlens 1107 and into the first optical package 900, where the first optical signal 1201 is received by the edge coupler 805 within the fourth optical component 803.

[0086] Similarly, the second optical signal ( Fig.14 The second optical signal (not shown) can be transmitted from the edge coupler 805 in the fourth optical component 803 through the optional first microlens 1107 and transmitted to the first reflector 1105. The first reflector 1105 receives the second optical signal and reflects them to the second reflector 1303. The second reflector 1303 receives the second optical signal from the first reflector 1105 and reflects the second optical signal into the first optical fiber 1109. Therefore, the second optical signal can be transmitted through the first optical package 900.

[0087] Fig.15 Another embodiment is shown, which uses a third reflector structure 1501 and a fourth reflector structure 1601 ( Fig.15 Not shown, but the following Fig.16 1001 ), which together can be used with or without the first socket 1001 (where the illustrated embodiment does not have a first socket). In this embodiment, the third reflector structure 1501 can be similar to the first reflector structure 1101, such as having a first reflector 1105, a first microlens 1107, and also having a portion extending above the first optical package 900.

[0088] However, in this embodiment, the first optical fiber 1109 is not located in the third reflector structure 1501. Instead, instead of the first optical fiber 1109, the third reflector structure 1501 additionally includes a third connecting portion 1505 that can be used to position and hold the fourth reflector structure 1503. In an embodiment, the third connecting portion 1505 can be similar to the above description of FIG. 10A to FIG. 10DFor example, the third connecting portion 1505 may be a material similar to the first material 1103 and may be formed by etching and / or otherwise shaping the first material 1103, or may be detachable from the remainder of the first material 1103. However, any suitable materials and methods may be utilized.

[0089] Once the third reflector structure 1501 has been formed or otherwise prepared, the third reflector structure 1501 can be attached to the first optical package 900. However, because the first socket 1001 is not present in the illustrated embodiment, the third reflector structure 1501 is directly attached to the first optical package 900 using, for example, a first adhesive 1007. However, in other embodiments, the third reflector structure 1501 can be attached using the first socket 1001. Any suitable method of attaching the third reflector structure 1501 can be utilized.

[0090] Fig.16 It is shown that the fourth reflector structure 1601 can be placed and / or attached to the third reflector structure 1501 after or before the third reflector structure 1501 is attached to the first optical package 900. In an embodiment, the fourth reflector structure 1601 can include the second reflector 1303 embedded in the first material 1103. In addition, the fourth reflector structure 1601 can receive the first optical fiber 1109 aligned with the second reflector 1303.

[0091] Fig.16 Additionally shown, the fourth reflector structure 1601 includes a second opening 1603 that facilitates attaching the fourth reflector structure 1601 to the third reflector structure 1501. Thus, the second opening 1603 in the fourth reflector structure 1601 has a design that corresponds to the design of the corresponding third connection portion 1505 of the third reflector structure 1501. To place the fourth reflector structure 1601 onto the third reflector structure 1501, the second opening 1603 in the fourth reflector structure 1601 may be aligned with the third connection portion 1505, and the third connection portion 1505 inserted into the second opening 1603 in the fourth reflector structure 1601.

[0092] Fig.17 As shown, once the first reflector structure 1101, the second reflector structure 1301 or the third reflector structure 1501 and the fourth reflector structure 1601 have been attached to the first optical package 900 (where Fig.17 1101), the first optical package can be attached to an interposer substrate 1701, the interposer substrate 1701 is used to couple the first optical package 900 with other devices to form, for example, a chip on a wafer on a substrate. Device. In an embodiment, the interposer substrate 1701 includes a semiconductor substrate 1703, a third metallization layer 1705, a third device through hole (TDV) 1707, and a second external connector 1709. The semiconductor substrate 1703 may include doped or undoped bulk silicon, or an active layer of a silicon-on-insulator (SOI) substrate. Typically, the SOI substrate includes a semiconductor material layer such as silicon, germanium, silicon germanium, SOI, silicon germanium on insulator (SGOI), or a combination thereof. Other substrates that may be used include multilayer substrates, gradient substrates, or hybrid orientation substrates.

[0093] Optionally, a first active device (not separately shown) may be added to the semiconductor substrate 1703. The first active device includes a variety of active and passive devices, such as capacitors, resistors, inductors, etc., that may be used to generate the desired structural and functional requirements for the design of the semiconductor substrate 1703. The first active device may be formed in or on the semiconductor substrate 1703 using any suitable method.

[0094] The third metallization layer 1705 is formed over the semiconductor substrate 1703 and the first active device, and is designed to connect the various devices to form a functional circuit. In an embodiment, the third metallization layer 1705 is formed of alternating layers of dielectric materials (e.g., low-k dielectric materials, very low-k dielectric materials, ultra-low-k dielectric materials, combinations of these, etc.) and conductive materials, and can be formed by any suitable process (such as deposition, damascene, dual damascene, etc.). However, any suitable materials and processes can be utilized.

[0095] In addition, at any desired point in the manufacturing process, a second TDV 1707 can be formed within one or more layers of the semiconductor substrate 1703 and (if desired) the third metallization layer 1705 to provide an electrical connection from the front side of the semiconductor substrate 1703 to the back side of the semiconductor substrate 1703. In an embodiment, the second TDV 1707 can be formed by initially forming a through device via (TDV) opening in the semiconductor substrate 1703 and (if desired) any upper third metallization layer 1705 (e.g., after the desired third metallization layer has been formed, but before the next upper third metallization layer is formed). The TDV opening can be formed by: applying and developing a suitable photoresist; and removing the exposed portion of the underlying material to the desired depth. The TDV opening can be formed to extend into the semiconductor substrate 1703 to a depth greater than the final desired height of the semiconductor substrate 1703.

[0096] Once the TDV opening has been formed in the semiconductor substrate 1703 and / or any third metallization layer 1705, the TDV opening may be lined with a liner. The liner may be, for example, an oxide formed from tetraethyl orthosilicate (TEOS) or silicon nitride, but any suitable dielectric material may be used. The liner may be formed using a plasma enhanced chemical vapor deposition (PECVD) process, but other suitable processes may be used, such as physical vapor deposition or thermal processes.

[0097] Once the liner has been formed along the sidewalls and bottom of the TDV opening, a barrier layer can be formed and the remainder of the TDV opening can be filled with a first conductive material. The first conductive material can include copper, but other suitable materials such as aluminum, alloys, doped polysilicon, combinations thereof, etc. can be utilized. The first conductive material can be formed by electroplating copper onto the seed layer, filling and overfilling the TDV opening. Once the TDV opening has been filled, the excess liner, barrier layer, seed layer, and first conductive material outside of the TDV opening can be removed by a planarization process such as chemical mechanical polishing (CMP), but any suitable removal process can be used.

[0098] Once the TDV opening has been filled, the semiconductor substrate 1703 may be thinned until the second TDV 1707 has been exposed. In an embodiment, the semiconductor substrate 1703 may be thinned using, for example, a chemical mechanical polishing process, a grinding process, etc. Further, once exposed, the semiconductor substrate 1703 may be recessed using, for example, one or more etching processes, such as a wet etching process, to recess the semiconductor substrate 1703 such that the second TDV 1707 extends out of the semiconductor substrate 1703.

[0099] In an embodiment, the second external connector 1709 may be placed on the third metallization layer 1705 and may be, for example, a ball grid array (BGA) including a eutectic material such as solder, but any suitable material may be used. Optionally, an under-bump metallization or additional metallization layer ( Fig.17 1709 is a solder bump, the second external connector 1709 can be formed using a ball drop method, such as a direct ball drop process. In another embodiment, the solder bump can be formed by initially forming a tin layer by any suitable method such as evaporation, electroplating, printing, solder transfer, and then performing a reflow to shape the material into the desired bump shape. Once the second external connector 1709 has been formed, testing can be performed to ensure that the structure is suitable for further processing.

[0100] Once the interposer substrate 1701 has been formed, the first optical package 900 can be attached to the interposer substrate 1701. In an embodiment, the first optical package 900 can be attached to the interposer substrate 1701 by aligning the first external connector 913 with the conductive portion of the interposer substrate 1701. Once aligned and in physical contact, the first external connector 913 is reflowed by increasing the temperature of the first external connector 913 above the eutectic point of the first external connector 913, thereby transforming the material of the first external connector 913 into a liquid phase. Once reflowed, the temperature is reduced to transform the material of the first external connector 913 back into a solid phase, thereby bonding the first optical package 900 to the interposer substrate 1701.

[0101] Optionally, a first underfill material 1711 may be placed. The first underfill material 1711 may reduce stress and protect joints generated by reflow of the first external connector 913. The first underfill material 1711 may be formed by a capillary flow process after the first optical package 900 has been attached.

[0102] Once the first optical package 900 has been bonded to the interposer substrate 1701, the interposer substrate 1701 can be bonded to the second substrate 1721 with, for example, the second external connector 1709. In an embodiment, the second substrate 1721 can be a packaging substrate, which can be a printed circuit board (PCB), etc. The second substrate 1721 can include one or more dielectric layers and conductive components, such as wires and vias. In some embodiments, the second substrate 1721 can include vias, active devices, passive devices, etc. The second substrate 1721 can also include conductive pads formed at the upper and lower surfaces of the second substrate 1721.

[0103] The second external connectors 1709 may be aligned with corresponding conductive connections on the second substrate 1721. Once aligned, the second external connectors 1709 may then be reflowed to bond the second substrate 1721 to the interposer substrate 1701. However, any suitable bonding process may be used to connect the interposer substrate 1701 to the second substrate 1721.

[0104] Optionally, a second underfill material 1723 may be placed. The second underfill material 1723 may reduce stress and protect joints created by reflow of the second external connector 1709. The second underfill material 1723 may be formed by a capillary flow process after the interposer substrate 1701 has been attached.

[0105] In addition, the second substrate 1721 can be prepared for further connection by placing an annular structure 1727 on the side of the second substrate 1721 having the interposer substrate 1701, and by placing the third external connection 1725 on the side of the second substrate 1721 opposite the first optical package 900. In an embodiment, the annular structure 1727 can be a structure for structural support or heat removal, and an adhesive ( Fig.17 In addition, the third external connection 1725 can be formed using similar processes and materials as the second external connection 1709. However, any suitable materials and processes can be utilized.

[0106] Fig.18 Another embodiment is shown in which the first optical package 900 is bonded to an external device. Fig.18 In the embodiment shown in FIG. , instead of Fig.17 The first optical package 900 is described as being bonded to an interposer substrate 1701 (e.g., a silicon interposer), and the first optical package 900 is directly bonded to a second semiconductor substrate 1801. In an embodiment, the second semiconductor substrate 1801 may be a material similar to the semiconductor substrate 1703, such as being a silicon substrate. However, any suitable material may be utilized.

[0107] Furthermore, in this embodiment, the third TDV 1803 may be formed to extend through the second semiconductor substrate 1801 and provide an electrical connection between one side of the second semiconductor substrate 1801 and the other side of the second semiconductor substrate 1801. In an embodiment, the third TDV 1803 may be formed using the same method as described above with respect to Fig.17 The third TDV 1803 may be formed by similar processes and materials as the second TDV 1707 described above. For example, the third TDV 1803 may be formed by: forming an opening; filling the opening with a conductive material; and then thinning the second semiconductor substrate 1801 to expose the conductive material. However, any suitable method and material may be utilized.

[0108] Once the second semiconductor substrate 1801 and the third TDV 1803 are prepared, the first optical package 900 may be bonded to the second semiconductor substrate 1801, and the second semiconductor substrate 1801 may be bonded to the second substrate 1721. In an embodiment, the bonding may be as described above with respect to Fig.17 However, any suitable methods and materials may be utilized.

[0109] Fig.19 Another embodiment is shown in which the first optical package 900 is bonded to an external device. Fig.19In the embodiment shown in FIG. 1 , instead of bonding the first optical package 900 to the interposer substrate 1701 (as described with respect to FIG. 1 ), Fig.17 described) or bonded to the second semiconductor substrate 1801 (as described with respect to Fig.18 ), the first optical package 900 is bonded to the redistribution structure 1901. In an embodiment, the redistribution structure 1901 includes multiple levels of conductive material 1903 and molding material 1905 formed by initially plating each level of conductive material 1903 and then placing a molding material 1905 such as a molding compound to cover each level of conductive material 1903 and then repeating the process. However, any suitable material may be utilized.

[0110] Once the redistribution structure 1901 is prepared, the first optical package 900 may be bonded to the redistribution structure 1901, and the redistribution structure 1901 may be bonded to the second substrate 1721. In an embodiment, the bonding may be as described above with respect to Fig.17 However, any suitable methods and materials may be utilized.

[0111] Fig. 20 Yet another embodiment is shown in which a plurality of reflector structures are connected and bonded to the first optical package 900. However, in the embodiment shown herein, instead of the third reflector structure 1501 and the fourth reflector structure 1601 being connected by the third connecting portion 1505, the fifth reflector structure 2001 and the sixth reflector structure 2003 are connected by glue 2005.

[0112] First, the fifth reflector structure 2001 is observed. In this embodiment, the fifth reflector structure 2001 includes the second reflector 1303 and the first optical fiber 1109 in the first material 1103. The fifth reflector structure 2001 also includes an opening 1111 to connect the fifth reflector structure 2001 to the first socket 1001, and has a flat bottom surface for attachment to the sixth reflector structure 2003.

[0113] The sixth mirror structure 2003 comprises a first mirror 1105 and an optional first microlens 1107 within a first material 1103, and is formed separately from the fifth mirror structure 2001. Furthermore, the sixth mirror structure 2003 has a flat top surface for attachment to the fifth mirror structure 2001. However, any suitable shape may be utilized.

[0114] In an embodiment, the fifth reflector structure 2001 is bonded to the sixth reflector structure 2003 before or after the fifth reflector structure 2001 is attached to the first socket 1001. In an embodiment, the fifth reflector structure 2001 may be bonded to the sixth reflector structure 2003 using an adhesive 2005 that is transparent to optical signals, and may be, for example, optical glue, ultraviolet agent, etc. However, any suitable adhesive may be utilized.

[0115] Once the fifth reflector structure 2001 has been bonded to the sixth reflector structure 2003, the fifth reflector structure 2001 may be attached to the first socket 1001 as described above with respect to Fig.11A As described above, the optical signal may be transmitted through the fifth reflector structure 2001 and the sixth reflector structure 2003. For example, the first optical signal 1201 may leave the first optical fiber 1009, be reflected by the second reflector 1303, pass through the adhesive 2005, be reflected by the first reflector 1105, pass through the optional first microlens 1107, and be captured by the edge coupler 805. However, any suitable path may be utilized.

[0116] By utilizing a reflector structure as described herein, a co-packaged optical device can avoid the use of grating couplers when transmitting and receiving optical signals to and from the optical device. In particular, by using a reflector structure, optical signals from an optical fiber can be routed into a plane including an edge coupler, thereby avoiding the use of a grating coupler. Thus, limitations on operating bandwidth and polarization sensitivity can be avoided, thereby allowing faster, more efficient devices.

[0117] In an embodiment, a method of manufacturing an optical device includes: receiving a first optical package; and attaching a first reflector structure to the first optical package, wherein, after attaching the first reflector structure, a first reflector within the first reflector structure is aligned with an edge coupler within the first optical package, and wherein, after attaching the first reflector structure, a first optical fiber is located within the first reflector structure. In an embodiment, the first reflector structure includes a first microlens. In an embodiment, the first optical fiber is aligned to send an optical signal to the first reflector. In an embodiment, the first reflector structure includes a second reflector. In an embodiment, the first optical fiber is aligned to send an optical signal to the second reflector. In an embodiment, attaching the first reflector structure includes: attaching a first socket to the first optical package; and attaching the first reflector structure to the first socket. In an embodiment, attaching the first reflector structure includes directly attaching the first reflector structure to the first optical package with an adhesive.

[0118] In another embodiment, a method of manufacturing an optical device, the method comprising: forming a first optical package, the first optical package comprising an edge coupler; placing an adhesive on the first optical package; bonding a first reflector structure to the adhesive, wherein after bonding the first reflector structure, a first reflector within the first reflector structure is aligned with the edge coupler; and connecting a second reflector structure to the first reflector structure, the second reflector structure comprising a second reflector and a first optical fiber. In an embodiment, after bonding the first reflector structure, the first microlens is located between the first reflector and the edge coupler. In an embodiment, bonding the first reflector structure to the adhesive places the first reflector structure in physical contact with the adhesive. In an embodiment, the method further comprises: attaching the first optical package to an interposer substrate. In an embodiment, the method further comprises attaching the first optical package to a silicon substrate. In an embodiment, the method further comprises: attaching the first optical package to a redistribution structure. In an embodiment, the first reflector comprises a reflector array.

[0119] In yet another embodiment, an optical device comprises: a first optical package; and a first reflector structure bonded to the first optical package, the first reflector structure comprising: a first reflector aligned with an edge coupler within the first optical package; and a first optical fiber. In an embodiment, the first optical fiber is aligned parallel to a sidewall of the first optical package. In an embodiment, the first reflector structure further comprises a second reflector, the second reflector being aligned with an output of the first optical fiber. In an embodiment, the first reflector structure comprises: a first portion comprising the first reflector; and a second portion comprising the second reflector, the first portion extending into the second portion. In an embodiment, the optical device further comprises: a microlens located within the first reflector structure and between the first reflector and the edge coupler. In an embodiment, the first reflector structure is bonded to the first optical package with a first socket.

[0120] Some embodiments of the present application provide a method for manufacturing an optical device, the method comprising: attaching a first reflector structure to a first optical package, wherein, after attaching the first reflector structure, a first reflector within the first reflector structure is aligned with an edge coupler within the first optical package, and wherein, after attaching the first reflector structure, a first optical fiber is located within the first reflector structure.

[0121] In some embodiments, the first reflector structure includes a first microlens. In some embodiments, the first optical fiber is aligned to send an optical signal to the first reflector. In some embodiments, the first reflector structure includes a second reflector. In some embodiments, the first optical fiber is aligned to send an optical signal to the second reflector. In some embodiments, attaching the first reflector structure includes: attaching a first socket to the first optical package; and attaching the first reflector structure to the first socket. In some embodiments, attaching the first reflector structure includes directly attaching the first reflector structure to the first optical package with an adhesive.

[0122] Still other embodiments of the present application provide a method for manufacturing an optical device, the method comprising: placing an adhesive on a first optical package, wherein the first optical package comprises an edge coupler; bonding a first reflector structure to the adhesive, wherein after bonding the first reflector structure, a first reflector within the first reflector structure is aligned with the edge coupler; and connecting a second reflector structure to the first reflector structure, the second reflector structure comprising a second reflector and a first optical fiber.

[0123] In some embodiments, after bonding the first reflector structure, a first microlens is located between the first reflector and the edge coupler. In some embodiments, bonding the first reflector structure to the adhesive causes the first reflector structure to be in physical contact with the adhesive. In some embodiments, the method further includes attaching the first optical package to an interposer substrate. In some embodiments, the method further includes attaching the first optical package to a silicon substrate. In some embodiments, the method further includes attaching the first optical package to a redistribution structure. In some embodiments, the first reflector includes a reflector array.

[0124] Still other embodiments of the present application provide an optical device comprising: a first optical package; and a first reflector structure bonded to the first optical package, the first reflector structure comprising: a first reflector aligned with an edge coupler within the first optical package; and a first optical fiber.

[0125] In some embodiments, the first optical fiber is aligned parallel to a side wall of the first optical package. In some embodiments, the first reflector structure further comprises a second reflector, the second reflector being aligned with an output of the first optical fiber. In some embodiments, the first reflector structure comprises: a first portion comprising the first reflector; and a second portion comprising the second reflector, the first portion extending into the second portion. In some embodiments, the optical device further comprises: a microlens located within the first reflector structure and between the first reflector and the edge coupler. In some embodiments, the first reflector structure is bonded to the first optical package with a first socket.

[0126] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the embodiments of the present disclosure. Those skilled in the art should understand that they can easily use the embodiments of the present disclosure as a basis to design or modify other processes and structures for performing the same purpose and / or achieving the same advantages as the embodiments introduced herein. Those skilled in the art should also appreciate that such equivalent constructions do not deviate from the spirit and scope of the embodiments of the present disclosure, and that they can make various changes, substitutions and modifications herein without departing from the spirit and scope of the embodiments of the present disclosure.

Claims

1. A method for manufacturing an optical device, the method comprising: attaching a first reflector structure to the first optical package, wherein, after attaching the first reflector structure, a first reflector within the first reflector structure is aligned with an edge coupler within the first optical package, and Wherein, after the first reflector structure is attached, the first optical fiber is located inside the first reflector structure.

2. The method according to claim 1, wherein: The first reflector structure includes a first microlens.

3. The method according to claim 1, wherein: The first optical fiber is aligned to send an optical signal to the first reflector.

4. The method according to claim 1, wherein: The first reflector structure includes a second reflector.

5. The method according to claim 4, wherein: The first optical fiber is aligned to send an optical signal to the second reflector.

6. The method according to claim 1, wherein: Attaching the first reflector structure comprises: attaching a first socket to the first optical package; and The first reflector structure is attached to the first socket.

7. The method according to claim 1, wherein: Attaching the first reflector structure includes attaching the first reflector structure directly to the first optical package with an adhesive.

8. A method for manufacturing an optical device, the method comprising: placing an adhesive onto a first optical package, wherein the first optical package includes an edge coupler; bonding a first reflector structure to the adhesive, wherein after bonding the first reflector structure, a first reflector within the first reflector structure is aligned with the edge coupler; and A second reflector structure is connected to the first reflector structure, the second reflector structure comprising a second reflector and a first optical fiber.

9. The method according to claim 8, wherein: After bonding the first reflector structure, a first microlens is located between the first reflector and the edge coupler.

10. An optical device comprising: a first optical package; as well as A first reflector structure is bonded to the first optical package, the first reflector structure comprising: a first reflector aligned with an edge coupler within the first optical package; as well as First optical fiber.

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