Substrate processing apparatus and substrate processing method

Abstract

The invention provides a substrate processing apparatus and a substrate processing method to remove contamination of a holding portion. The substrate processing apparatus includes a processing unit that processes a substrate with a processing liquid. The processing unit has a holding unit that holds the substrate horizontally. The holding portion includes a first holding portion in contact with a center of a lower surface of the substrate. The processing unit has a rotation driving unit that rotates the first holding unit about a vertical rotation axis. The substrate processing apparatus includes: a charging unit that charges a second substrate prepared separately from the substrate; and a control unit that performs control for bringing the second substrate charged by the charging unit into contact with the first holding unit.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device and a substrate processing method. Background Art

[0002] The substrate processing device described in Patent Document 1 includes two adsorption pads, a liquid receiving cup, a rotating holding disk, a housing, a first cleaning section, and a second cleaning section. The two adsorption pads adsorb and hold the lower surface of the substrate horizontally. The liquid receiving cup is connected to the two adsorption pads. The rotating holding disk adsorbs and holds the lower surface of the substrate received from the adsorption pads horizontally. The housing has an opening portion with an opening on the upper surface. A discharge pipe for discharging the cleaning liquid and an exhaust pipe for exhausting the airflow are provided at the bottom of the housing. The first cleaning section cleans the upper surface of the substrate. The second cleaning section cleans the lower surface of the substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2020-43156 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] One aspect of the present disclosure provides a technology for removing contamination from a holding portion.

[0008] Solutions for solving problems

[0009] A substrate processing device according to one embodiment of the present disclosure includes a processing unit for processing a substrate using a processing liquid. The processing unit includes a holding unit for holding the substrate in a horizontal state. The holding unit includes a first holding unit in contact with the center of the lower surface of the substrate. The processing unit includes a rotation drive unit for rotating the first holding unit around a vertical rotation axis. The substrate processing device includes: a charging unit for charging a second substrate prepared separately from the substrate; and a control unit for controlling the second substrate charged by the charging unit to contact the first holding unit.

[0010] Effects of the Invention

[0011] According to one aspect of the present disclosure, it is possible to remove contamination of the holding portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a top view showing a substrate processing apparatus according to one embodiment.

[0013] Figure 2 is a top view showing an example of a processing device, Figure 8 FIG. 1 is a top view of an example of step S104.

[0014] Figure 3 It is shown Figure 8 A cross-sectional view of an example of step S104.

[0015] Figure 4 It is shown Figure 8 FIG. 1 is a top view of an example of step S102.

[0016] Figure 5 It is shown Figure 8 FIG. 1 is a cross-sectional view of an example of step S102.

[0017] Figure 6 This is a cross-sectional view showing an example of the operation of the lift pin.

[0018] Figure 7 Then Figure 6 A cross-sectional view showing an example of the operation of the lift pins.

[0019] Figure 8 This is a flowchart showing an example of the operation of the processing device.

[0020] Fig. 9 This is a flowchart showing an example of cleaning of a processing device.

[0021] Fig.10 It is shown Fig. 9 A cross-sectional view of an example of step S202.

[0022] Fig.11 : is a diagram showing an example of the distribution of the electrostatic force obtained in step S202.

[0023] Fig.12 It is shown Fig. 9 A cross-sectional view of an example of step S203.

[0024] Fig.13 It is shown Fig. 9 A cross-sectional view of an example of step S204.

[0025] Fig.14 It is shown Fig. 9 A cross-sectional view of an example of step S206.

[0026] Fig.15 : is a diagram showing an example of the distribution of the electrostatic force obtained in step S206.

[0027] Fig.16 : is a diagram showing an example of the distribution of the electrostatic force obtained in step S206 when the third substrate is used instead of the second substrate.

[0028] Fig.17This is a diagram showing an example of the number of particles attached to the substrate after the processing apparatus is cleaned using the second substrate or the third substrate.

[0029] Fig.18 It is a diagram showing an example of the third holding unit.

[0030] Fig.19 It is a top view showing an example of a wall portion.

[0031] Fig. 20 It is a cross-sectional view showing an example of a wall portion. DETAILED DESCRIPTION

[0032] The following is an explanation of the embodiments of the present disclosure with reference to the accompanying drawings. In addition, in each of the drawings, the same or corresponding structures are marked with the same reference numerals, and the description is sometimes omitted. In this specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are directions perpendicular to each other. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction.

[0033] Reference Figure 1 The substrate processing apparatus 100 according to one embodiment is described. The substrate processing apparatus 100 processes a substrate W. The substrate W includes, for example, a semiconductor wafer such as a silicon wafer. The substrate W may also include a plurality of devices formed on the semiconductor wafer. The device includes, for example, an electronic circuit. The substrate W may also be a stacked substrate formed by stacking a plurality of semiconductor wafers. The stacked substrate is obtained by bonding a plurality of semiconductor wafers.

[0034] The substrate processing apparatus 100 includes a loading and unloading station 110, a processing station 120, and a control device 190. The loading and unloading station 110 includes a loading table 111. Boxes C1 and C2 are loaded on the loading table 111. Box C1 stores substrates W before processing. Box C2 stores substrates W after processing. There is no particular limitation on the number of boxes C1 and C2. Boxes not shown in the figure can also store substrates W that have a defective condition in the middle of processing.

[0035] The loading and unloading station 110 includes a first conveying area 112 and a first conveying device 113. The first conveying area 112 extends in the Y-axis direction, and the first conveying area 112 is adjacent to the mounting table 111 and the conveying device 121. The first conveying device 113 conveys the substrate W between a plurality of devices adjacent to the first conveying area 112. The first conveying device 113 includes a conveying arm for holding the substrate W, and a driving unit for moving or rotating the conveying arm. The conveying arm can move in the horizontal direction (the two directions of the X-axis direction and the Y-axis direction) and the vertical direction, and rotate around the vertical axis. A plurality of conveying arms may also be provided.

[0036] The processing station 120 includes a conveyor 121, a second conveying area 122, a second conveying device 123, a processing device 124, and a storage device 125. The second conveying device 123 is an example of a conveying unit. In addition, the processing device 124 is an example of a processing unit. In addition, the storage device 125 is an example of a storage unit. In addition, the arrangement and number of devices constituting the processing station 120 are not limited to Figure 1 Configuration and quantity shown.

[0037] The conveyor 121 temporarily stores the substrates W. The conveyor 121 is provided between the first conveying region 112 and the second conveying region 122 to relay the substrates W between the first conveyor 113 and the second conveyor 123 .

[0038] The second transport area 122 extends in the X-axis direction, and the second transport area 122 is adjacent to the conveyor 121, the processing device 124, and the storage device 125. The second transport device 123 transports the substrate W between multiple devices adjacent to the second transport area 122. The second transport device 123 has a transport arm that holds the substrate W, and a drive unit that moves or rotates the transport arm. The transport arm can move in the horizontal direction (the two directions of the X-axis direction and the Y-axis direction) and the vertical direction, and rotate around the vertical axis. Multiple transport arms can also be provided.

[0039] The processing device 124 processes the substrate W using a processing liquid. The processing liquid includes, for example, a chemical liquid and a rinse liquid. The chemical liquid is not particularly limited, but is, for example, SC1 (a mixture of ammonia, hydrogen peroxide, and water). The chemical liquid may be an etching liquid or a stripping liquid in addition to a cleaning liquid for removing contamination attached to the substrate W. The rinse liquid is, for example, DIW (deionized water). The chemical liquid and the rinse liquid may also be supplied to the substrate W in sequence.

[0040] The storage device 125 stores the second substrate W2 for cleaning the processing device 124. The second substrate W2 is transported from the storage device 125 to the processing device 124 by the second conveying device 123 and is used in cleaning the processing device 124. Afterwards, the second substrate W2 is returned from the processing device 124 to the storage device 125 by the second conveying device 123. The used second substrate W2 is replaced with an unused second substrate W2 during maintenance of the substrate processing device 100. Details related to the second substrate W2 will be described later.

[0041] The control device 190 is, for example, a computer, and includes a computing unit 191 such as a CPU (Central Processing Unit) and a storage unit 192 such as a memory. The storage unit 192 stores programs for controlling various processes performed in the substrate processing device 100. The control device 190 controls the operation of the substrate processing device 100 by causing the computing unit 191 to execute the program stored in the storage unit 192. A unit control unit for controlling the operation of each unit constituting the substrate processing device 100 may be provided, and a system control unit for centrally controlling a plurality of unit control units may be provided. The control device 190 may also be composed of a unit control unit and a system control unit. The control device 190 is an example of a control unit.

[0042] Next, an example of the operation of the substrate processing apparatus 100 will be described. First, the first transfer apparatus 113 takes out the substrate W from the cassette C1 and transfers it to the conveyor 121. Next, the second transfer apparatus 123 takes out the substrate W from the conveyor 121 and transfers it to the processing apparatus 124.

[0043] Next, the processing device 124 processes the substrate W using the processing liquid. Thereafter, the second transport device 123 takes the substrate W out of the processing device 124 and transports it to the transfer device 121. Finally, the first transport device 113 takes the substrate W out of the transfer device 121 and stores it in the cassette C2.

[0044] Reference Figure 2 to Figure 7 , to illustrate an example of the processing device 124. Figure 3 As shown, the processing device 124 includes, for example, a first holding portion 11, a second holding portion 12, a rotation drive portion 13, a cup 20, and a movement drive portion 25 (see Figure 2 ), a processing liquid supply unit 30, a processing tank 40, a drain pipe 45, an exhaust pipe 46, an exhaust pipe cover 47, a friction body 50 and a friction body moving unit 55.

[0045] The first holding portion 11 contacts the center of the lower surface of the substrate W and holds the substrate W horizontally. The first holding portion 11 contacts only a portion of the lower surface of the substrate W. In the present embodiment, the first holding portion 11 vacuum adsorbs the substrate W, but the substrate W may also be electrostatically adsorbed. The first holding portion 11 is, for example, a rotating holding disk, which is rotationally driven by the rotation driving portion 13. The first holding portion 11 is rotated around a vertical rotation axis. The first holding portion 11 may also be movable in the Z-axis direction.

[0046] A plurality of lifting pins 14 are arranged around the first holding part 11. The plurality of lifting pins 14 lower or raise the substrate W relative to the first holding part 11 or the second holding part 12. The plurality of lifting pins 14 are arranged at equal intervals in the circumferential direction of the first holding part 11. The plurality of lifting pins 14 are raised and lowered around the first holding part 11 to transfer the substrate W between the first holding part 11 or the second holding part 12 and a transfer arm (not shown).

[0047] In addition, a gas ejection ring 15 is arranged around the first holding portion 11. The gas ejection ring 15 surrounds the first holding portion 11 and forms an annular gas curtain toward the lower surface of the substrate W. The gas curtain restricts the processing liquid from entering from the outside of the gas curtain to the inside, thereby protecting the first holding portion 11. The gas curtain also protects the plurality of lift pins 14 arranged on the inside of the gas curtain. The gas ejection ring 15 is an example of a gas ejection portion. The gas ejection portion may not be annular.

[0048] The second holding portion 12 contacts the lower surface of the substrate W at a position radially outward of the substrate W than the first holding portion 11, and holds the substrate W in a horizontal state. The second holding portion 12 contacts only a portion of the lower surface of the substrate W. In the present embodiment, the second holding portion 12 performs vacuum adsorption on the substrate W, but electrostatic adsorption on the substrate W may also be performed. The second holding portion 12 includes a pair of adsorption pads 12A, 12B arranged at intervals in the X-axis direction. The pair of adsorption pads 12A, 12B are arranged in the X-axis direction with the first holding portion 11 therebetween. The second holding portion 12 is connected to the cup 20, and can move in the horizontal direction (Y-axis direction) and the vertical direction together with the cup 20.

[0049] The cup 20 is annular and open in both vertical directions, and surrounds the periphery of the substrate W held by the first holding portion 11 or the second holding portion 12. The cup 20 has a cylindrical vertical wall 21 and an upper wall 22 protruding radially inward from the upper end of the cylindrical vertical wall 21. The cup 20 receives the processing liquid supplied to the substrate W.

[0050] The moving drive unit 25 moves the second holding unit 12 in the horizontal direction (Y-axis direction) and the vertical direction (Z-axis direction) orthogonal to the rotation axis of the first holding unit 11. The moving drive unit 25 moves the second holding unit 12 together with the cup 20. The cup 20 moves inside the processing tank 40. When viewed from above, the side surface 42 of the processing tank 40 surrounds the entire moving range of the cup 20.

[0051] The processing liquid supply unit 30 supplies the processing liquid to the substrate W surrounded by the cup 20. The processing liquid includes, for example, a chemical liquid and a rinse liquid. The chemical liquid is not particularly limited, but is, for example, SC1 (a mixture of ammonia, hydrogen peroxide, and water). In addition to being a cleaning liquid for removing contaminants attached to the substrate W, the chemical liquid may also be an etching liquid or a stripping liquid. The rinse liquid is, for example, DIW (deionized water). The chemical liquid and the rinse liquid may also be supplied to the substrate W in sequence.

[0052] The processing liquid supply unit 30 includes lower nozzles 31 and 32 for supplying the processing liquid to the lower surface of the substrate W (see Figure 2 and Figure 4 ). The lower nozzles 31 and 32 are connected to the supply source of the treatment liquid via pipes not shown in the figure. A valve and a flow controller are provided in the middle of the pipes. When the valve opens the flow path of the pipes, the treatment liquid is ejected from the lower nozzles 31 and 32. The ejection amount is controlled by the flow controller. On the other hand, when the valve closes the flow path of the pipes, the ejection of the treatment liquid is stopped.

[0053] The processing liquid supply unit 30 includes an upper nozzle 33 (see FIG. 1 ) for supplying the processing liquid to the upper surface of the substrate W. Figure 3 ). The upper nozzle 33 is connected to a supply source of the processing liquid via a pipe (not shown) similarly to the lower nozzles 31 and 32. The upper nozzle 33 may also be a two-fluid nozzle, which can spray the processing liquid in a crushed and atomized form using a gas such as N2 gas.

[0054] The processing liquid supply unit 30 includes a nozzle moving unit 34 that moves the upper nozzle 33 in the horizontal direction and the vertical direction. The nozzle moving unit 34 moves the upper nozzle 33 to a position (see FIG. 1 ) where the processing liquid is supplied to the substrate W surrounded by the cup 20. Figure 3 ) and the position where the ejection outlet of the upper nozzle 33 is accommodated in the nozzle groove 35 (refer to Figure 5 )

[0055] The nozzle groove 35 is also called a pseudo distribution port (Japanese: ダミーディスペンスポート). Immediately before the processing liquid is supplied from the upper nozzle 33 to the substrate W, the old processing liquid (for example, the processing liquid whose temperature has been lowered) accumulated in the upper nozzle 33 is ejected to the nozzle groove 35, thereby enabling the supply of new processing liquid (for example, the processing liquid whose temperature is controlled to a desired temperature) to the substrate W. A discharge pipe is provided on the bottom wall of the nozzle groove 35. The discharge pipe discharges the processing liquid accumulated inside the nozzle groove 35 into the inside of the processing tank 40. The discharge pipe is provided vertically. The processing liquid flows down inside the discharge pipe due to gravity. The lower end of the discharge pipe is arranged at a position higher than the bottom surface 43 of the processing tank 40.

[0056] The processing tank 40 recovers the processing liquid dropped from the cup 20. The processing tank 40 is, for example, in the shape of a box with an open top. The inner wall surface 41 of the processing tank 40 has a side surface 42 and a bottom surface 43. The bottom surface 43 has a discharge port 44 for discharging the processing liquid. A drain pipe 45 is provided at the discharge port 44. The drain pipe 45 discharges the processing liquid from the inside of the processing tank 40 to the outside. In addition to the drain pipe 45, an exhaust pipe 46 is also provided on the bottom surface 43 of the processing tank 40. The exhaust pipe 46 is, for example, provided on both sides in the X-axis direction with the rotation drive unit 13 as a reference (refer to Fig. 20 ).

[0057] The exhaust pipe 46 exhausts gas from the inside of the processing tank 40 to the outside. The exhaust pipe 46 protrudes upward from the bottom surface 43 of the processing tank 40. The exhaust pipe 46 is covered with an exhaust pipe cover 47. The exhaust pipe cover 47 prevents droplets of the processing liquid from entering the exhaust pipe 46. In addition, the exhaust pipe cover 47 protects the rotation drive unit 13 from the droplets of the processing liquid. The exhaust pipe cover 47 extends in two directions, the positive direction of the X axis and the negative direction of the X axis, with the rotation drive unit 13 as a reference.

[0058] The friction body 50 rubs the lower surface of the substrate W. The friction body 50 is a brush or a sponge. The friction body 50 is, for example, cylindrical, and the upper surface of the friction body 50 is arranged horizontally. The upper surface of the friction body 50 is smaller than the lower surface of the substrate W. The friction body 50 is formed of a resin such as PVA (polyvinyl alcohol).

[0059] The friction body 50 is rotated by a rotary motor 51. The rotary motor 51 is provided at one end of an arm 53. A friction body moving unit 55 is provided at the other end of the arm 53. The friction body moving unit 55 moves the friction body 50 in the horizontal direction and the vertical direction via the arm 53.

[0060] Next, refer to Figure 8 , to illustrate an example of the operation of the processing device 124. Figure 8 As shown, the processing device 124 performs steps S101 to S106 . Steps S101 to S106 are performed under the control of the control unit 90 .

[0061] Step S101 includes moving the substrate W from the outside of the processing device 124 to the inside. First, the transfer arm of the second transfer device 123 transfers the substrate W to the top of the cup 20 and waits above the cup 20. At this time, when viewed from above, as shown in FIG. Figure 2 As shown, the center of the substrate W, the center of the first holding portion 11, and the center of the cup 20 coincide with each other.

[0062] Next, the plurality of lift pins 14 are raised, and the plurality of lift pins 14 lift the substrate W from the transfer arm of the second transfer device 123 (see Figure 6). In addition, the transfer arm may be lowered instead of raising the lift pins 14. Next, when the transfer arm is withdrawn from the processing device 124, the cup 20 is raised and the plurality of lift pins 14 are lowered, and the plurality of lift pins 14 deliver the substrate W to the second holding portion 12 (see Figure 7 ). Next, the second holding portion 12 adsorbs the lower surface peripheral portion of the substrate W. Thereafter, the moving drive unit 25 moves the second holding portion 12 together with the cup 20 in the horizontal direction. Figure 4 The diagram extends to a position where the center of the lower surface of the substrate W overlaps with the friction body 50 when viewed from above.

[0063] Step S102 includes cleaning the lower surface center portion of the substrate W while the lower surface peripheral portion of the substrate W is adsorbed by the second holding portion 12 (see Figure 5 ). The lower nozzles 31 and 32 supply the processing liquid to the lower surface of the substrate W, and the friction body moving part 55 moves the friction body 50 in the horizontal direction while pushing the friction body 50 to the center of the lower surface of the substrate W. In addition, the moving drive part 25 moves the second holding part 12 together with the cup 20 in the horizontal direction. In addition, the moving direction of the friction body 50 is a direction intersecting with the moving direction of the cup 20.

[0064] Step S103 includes switching the substrate W from the second holding portion 12 to the first holding portion 11. First, the moving drive unit 25 moves the second holding portion 12 together with the cup 20 in the horizontal direction to a position such that the substrate W is substantially the same as that in the embodiment of FIG. Figure 2 The center of the substrate W is aligned with the center of the first holding portion 11. Then, the moving drive unit 25 lowers the cup 20, so that the second holding portion 12 hands the substrate W to the first holding portion 11. The second holding portion 12 releases the suction of the lower surface peripheral portion of the substrate W, and the first holding portion 11 suctions the lower surface central portion of the substrate W.

[0065] Step S104 includes cleaning the lower surface peripheral portion of the substrate W while the lower surface central portion of the substrate W is adsorbed by the first holding portion 11 (see Figure 3 The lower nozzles 31 and 32 supply the processing liquid to the lower surface of the substrate W, and the friction body moving unit 55 moves the friction body 50 in the horizontal direction while pushing the friction body 50 to the peripheral edge of the lower surface of the substrate W. In addition, the rotation drive unit 13 rotates the substrate W together with the first holding unit 11.

[0066] In addition, while the rotation drive unit 13 rotates the substrate W together with the first holding unit 11, the upper surface of the substrate W is cleaned. For example, the upper nozzle 33 supplies the processing liquid to the upper surface of the substrate W. The upper nozzle 33 can supply the processing liquid to the central part of the upper surface of the substrate W, or can move in the radial direction of the substrate W to supply the processing liquid throughout the entire radial direction of the substrate W. In addition, the second friction body not shown in the figure can also rub the upper surface of the substrate W. And, the third friction body not shown in the figure can also rub the inclined surface of the substrate W.

[0067] Step S105 includes drying the substrate W. For example, the rotation drive unit 13 rotates the first holding unit 11 at a high speed, thereby shaking off the processing liquid attached to the substrate W.

[0068] Step S106 includes moving the substrate W from the inside of the processing device 124 to the outside. First, the first holding portion 11 releases the adsorption of the substrate W, and the plurality of lifting pins 14 are raised, and the plurality of lifting pins 14 lift the substrate W from the first holding portion 11. Next, the transport arm of the second transport device 123 enters the inside from the outside of the processing device 124 and waits above the cup 20. Next, the plurality of lifting pins 14 are lowered, and the plurality of lifting pins 14 deliver the substrate W to the transport arm. In addition, the transport arm may be raised instead of lowering the lifting pins 14. Thereafter, the transport arm holds the substrate W and exits from the processing device 124.

[0069] In addition, since the first holding portion 11 holds the substrate W, contamination of the substrate W may be transferred to the first holding portion 11, thereby contaminating the first holding portion 11. Then, when the first holding portion 11 holds another substrate W, the other substrate W is also contaminated. Therefore, conventionally, an operator periodically wipes off the contamination of the first holding portion 11 with a fiber wipe such as a rag, or prepares a large number of clean substrates W and periodically brings a large number of substrates W into contact with the first holding portion 11 in sequence to remove the contamination of the first holding portion 11.

[0070] In this embodiment, a second substrate W2 is prepared separately from the substrate W, and the second substrate W2 is charged, and then the second substrate W2 is brought into contact with the first holding portion 11, which will be described in detail later. At this time, it is sufficient as long as the particles attached to the first holding portion 11 have opposite polarities to the second substrate W2. The particles can be attached to the second substrate W2 by electrostatic force, so that the particles can be taken out of the first holding portion 11 together with the second substrate W2. In this way, the first holding portion 11 can be cleaned efficiently.

[0071] In addition, as described later, the content of the present disclosure can also be applied to the cleaning of the lift pins 14. Specifically, the second substrate W2 is charged, and then the second substrate W2 is brought into contact with the lift pins 14. At this time, it is sufficient that the particles attached to the lift pins 14 have opposite polarities to the second substrate W2. The particles can be attached to the second substrate W2 by the force of static electricity, so that the particles can be taken out of the lift pins 14 together with the second substrate W2. In this way, the lift pins 14 can be cleaned efficiently.

[0072] Next, refer to Figures 9 to 17 , an example of cleaning of the processing device 124 is described. Fig. 9 As shown, the processing device 124 performs steps S201 to S206. Steps S201 to S206 are periodically performed under the control of the control unit 90. In steps S201 to S206, the prepared second substrate W2 is used instead of the substrate W.

[0073] like Fig.10 As shown, the second substrate W2 includes, for example, a supporting substrate W2a and an oxide film W2b. In the present embodiment, the supporting substrate W2a is a silicon wafer, but is not particularly limited, and may be, for example, a compound semiconductor wafer or a glass substrate. In the present embodiment, the oxide film W2b is a silicon oxide film, but is not particularly limited, and may include, for example, at least one of nitrogen and carbon in addition to oxygen.

[0074] The oxide film W2b can be charged with positive polarity by being rubbed by the friction body 50. On the other hand, it is known that the particles are charged with negative polarity in the presence of an alkaline aqueous solution. In other words, the oxide film W2b can be charged with a polarity opposite to that of the particles. In this embodiment, the method for forming the oxide film W2b is a thermal oxidation method, but it can also be a CVD (Chemical Vapor Deposition) method, an ALD (Atomic Layer Deposition) method, or the like.

[0075] It is preferred that at least the lower surface of the second substrate W2 has an oxide film W2b. This is because the processing device 124 easily accumulates particles below the second substrate W2. If the lower surface of the second substrate W2 has an oxide film W2b, the particles below the second substrate W2 can be adsorbed to the second substrate W2. In addition, the entire surface of the second substrate W2 in this embodiment has an oxide film W2b.

[0076] Step S201 includes moving the second substrate W2 from the outside of the processing device 124 to the inside. First, the transport arm of the second transport device 123 transports the second substrate W2 to the top of the cup 20 and waits above the cup 20. At this time, when viewed from above, as shown in FIG. Figure 2As shown, the center of the second substrate W2, the center of the first holding portion 11, and the center of the cup 20 coincide with each other.

[0077] Next, the plurality of lift pins 14 are raised, and the plurality of lift pins 14 lift the second substrate W2 from the transfer arm of the second transfer device 123 (see Figure 6 ). In addition, the transfer arm may be lowered instead of raising the lift pins 14. Next, when the transfer arm is withdrawn from the processing device 124, the cup 20 is raised and the plurality of lift pins 14 are lowered, and the plurality of lift pins 14 deliver the second substrate W2 to the second holding portion 12 (see Figure 7 ). Next, the second holding portion 12 absorbs the lower surface peripheral portion of the second substrate W2. Thereafter, the moving drive unit 25 moves the second holding portion 12 together with the cup 20 in the horizontal direction to the position as shown in FIG. Figure 4 The diagram extends to a position where the center of the lower surface of the second substrate W2 overlaps with the friction body 50 when viewed from above.

[0078] Step S202 includes charging the central portion of the lower surface of the second substrate W2 while the lower surface peripheral portion of the second substrate W2 is sucked by the second holding portion 12 (see Fig.10 The friction body moving part 55 moves the friction body 50 in the horizontal direction while pushing the friction body 50 to the central part of the lower surface of the second substrate W2. In addition, the moving driving part 25 moves the second holding part 12 in the horizontal direction together with the cup 20. In addition, the moving direction of the friction body 50 is a direction intersecting with the moving direction of the cup 20.

[0079] The friction body 50 rubs the central portion of the lower surface of the second substrate W2 to charge it. The friction body 50 is an example of a charged portion. The central portion of the lower surface of the second substrate W2 and the friction body 50 are charged with opposite polarities. For example, when the lower surface of the second substrate W2 is composed of an oxide film W2b and the friction body 50 is composed of a resin such as PVA, the central portion of the lower surface of the second substrate W2 is charged with positive polarity, and the friction body 50 is charged with negative polarity.

[0080] The lower nozzles 31 and 32 supply an alkaline aqueous solution between the second substrate W2 held by the second holding portion 12 and the friction body 50. The alkaline aqueous solution is not particularly limited, but is, for example, diluted ammonia water. Compared with pure water, the alkaline aqueous solution can promote the friction electrification of the second substrate W2, thereby increasing the charge of the second substrate W2. In addition, the alkaline aqueous solution can make the particles negatively charged. Therefore, a large number of particles can be attached to the second substrate W2 by the force of static electricity.

[0081] Preferably, the lower nozzles 31 and 32 continuously supply the alkaline aqueous solution to the central portion of the lower surface of the second substrate W2 from before the rubbing body 50 starts to rub the second substrate W2 to after the rubbing body 50 finishes rubbing the second substrate W2, so as to suppress the generation of friction scratches. After the lower nozzles 31 and 32 start to supply the alkaline aqueous solution, the rubbing body 50 starts to rub the second substrate W2. In addition, after the rubbing body 50 finishes rubbing the second substrate W2, the lower nozzles 31 and 32 stop supplying the alkaline aqueous solution.

[0082] exist Fig.11 An example of the distribution of the electrostatic force obtained in step S202 is shown in FIG. The present inventors have confirmed that by preparing a wafer having a thermal oxide film formed on the entire surface of a silicon wafer as the second substrate and rubbing the central portion of the lower surface of the second substrate with a PVA brush, as shown in FIG. Fig.11 As shown, the center of the lower surface of the second substrate is charged with positive polarity. In addition, although not shown, it has been confirmed that the thicker the thermal oxide film is, the greater the electrostatic capacitance of the thermal oxide film is, and thus the greater the charge amount of the second substrate is.

[0083] Step S203 includes switching the second substrate W2 from the second holding portion 12 to the first holding portion 11. First, the cup 20 is moved in the horizontal direction to a position where the cup 20 is as shown when viewed from above. Figure 2 The center of the second substrate W2 is aligned with the center of the first holding portion 11. During this period, the gas ejection ring 15 ejects gas toward the lower surface of the second substrate W2, thereby drying the lower surface of the second substrate W2.

[0084] Then, the moving drive unit 25 lowers the cup 20, and the second holding unit 12 hands the second substrate W2 to the first holding unit 11. The second holding unit 12 releases the suction of the lower surface peripheral portion of the second substrate W2, and the first holding unit 11 suctions the lower surface central portion of the second substrate W2. As a result, Fig.12 As shown, the center portion of the lower surface of the second substrate W2 is in contact with the first holding portion 11 .

[0085] At this time, the particles attached to the first holding portion 11 have opposite polarities to the central portion of the lower surface of the second substrate W2. Therefore, the particles can be attached to the second substrate W2 by electrostatic force, so that the particles and the second substrate W2 can be taken out of the first holding portion 11 together. In this way, the first holding portion 11 can be cleaned efficiently.

[0086] Furthermore, since the second substrate W2 is in contact with the first holding part 11, the positive charges accumulated in the center portion of the lower surface of the second substrate W2 flow out to the first holding part 11. As a result, the charge amount in the center portion of the lower surface of the second substrate W2 is reduced.

[0087] Step S204 includes charging the peripheral portion of the lower surface of the second substrate W2 while the central portion of the lower surface of the second substrate W2 is sucked by the first holding portion 11 (see Fig.13 The friction body moving part 55 moves the friction body 50 in the horizontal direction while pushing the friction body 50 to the lower surface peripheral part of the second substrate W2. In addition, the rotation drive part 13 rotates the second substrate W2 together with the first holding part 11. The friction body 50 rubs the lower surface peripheral part of the second substrate W2 to charge it.

[0088] In step S204, flow electrification is dominant over friction electrification. Flow electrification refers to a phenomenon in which electrostatic force is distributed due to the flow of liquid on a solid surface. In step S204, since the rotation drive unit 13 rotates the second substrate W2, the alkaline aqueous solution flows from the radial inside to the radial outside of the second substrate W2 due to centrifugal force. In this process, flow electrification is generated as described later. In addition, in step S202, since the rotation drive unit 13 does not rotate the second substrate W2, flow electrification is hardly generated.

[0089] The lower nozzles 31 and 32 supply an alkaline aqueous solution between the second substrate W2 held by the second holding portion 12 and the friction body 50. The alkaline aqueous solution is supplied between the central portion of the lower surface of the second substrate W2 and the peripheral portion of the lower surface, and flows toward the peripheral portion of the lower surface of the second substrate W2 due to centrifugal force. The alkaline aqueous solution contains negative ions and positive ions. At the supply position of the alkaline aqueous solution, the negative ions are easily adsorbed on the second substrate W2. The remaining positive ions are adsorbed on the peripheral portion of the lower surface of the second substrate W2. As a result, Fig.13 The distribution of electrostatic force is shown.

[0090] Step S205 includes drying the second substrate W2. For example, the rotation drive unit 13 rotates the first holding unit 11 at a high speed, thereby shaking off the processing liquid attached to the second substrate W2.

[0091] Step S206 includes moving the second substrate W2 from the inside of the processing device 124 to the outside. First, the first holding portion 11 releases the adsorption of the second substrate W2, so that the plurality of lifting pins 14 rise, and the plurality of lifting pins 14 lift the second substrate W2 from the first holding portion 11. As a result, Fig.14 As shown, the plurality of lift pins 14 are in contact with the center portion of the lower surface of the second substrate W2.

[0092] At this time, the particles attached to the plurality of lift pins 14 have opposite polarities to the central portion of the lower surface of the second substrate W2. Therefore, the particles can be attached to the second substrate W2 by electrostatic force, and the particles can be taken out of the lift pins 14 together with the second substrate W2. In this way, the plurality of lift pins 14 can be cleaned efficiently.

[0093] The transfer arm of the second transfer device 123 enters the processing device 124 from the outside and waits above the cup 20. Next, the plurality of lift pins 14 are lowered, and the plurality of lift pins 14 deliver the second substrate W2 to the transfer arm. Alternatively, the transfer arm may be raised instead of lowering the lift pins 14. Thereafter, the transfer arm holds the second substrate W2 and exits from the processing device 124.

[0094] At this time, the conveying arm is in contact with the lower surface periphery of the second substrate W2. The particles attached to the conveying arm of the second conveying device 123 have opposite polarities to the lower surface periphery of the second substrate W2. Therefore, the particles can be attached to the second substrate W2 by electrostatic force, so that the particles can be taken out of the conveying arm together with the second substrate W2. Thus, the conveying arm can be cleaned efficiently.

[0095] exist Fig.15 An example of the distribution of the electrostatic force obtained in step S206 is shown in FIG. The present inventors have confirmed that by preparing a wafer having a thermal oxide film on the entire surface of a silicon wafer as the second substrate W2 and performing steps S202 to S206, as shown in FIG. Fig.15 In addition, although not shown, it has been confirmed that the thicker the thermal oxide film is, the greater the electrostatic capacitance of the thermal oxide film is, and thus the greater the charge amount of the second substrate W2 after step S206 is.

[0096] exist Fig.16 FIG. 2 shows an example of the distribution of the electrostatic force obtained in step S206 when the third substrate is used instead of the second substrate W2. The third substrate is a substrate having only a silicon wafer and having no thermal oxide film on the surface of the silicon wafer. Fig.16 As shown, the charge level of the third substrate in the entire radial direction is low. Fig.15 and Fig.16 By comparison, it can be seen that the thermal oxide film contributes to charging.

[0097] exist Fig.17 In FIG. 1 , an example of the number of particles attached to the substrate W after using the second substrate W2 or the third substrate cleaning processing device 124 is described. Fig.17 In the process, the processing device 124 is contaminated in advance by processing the substrate W with 60,000 Si particles attached thereto by the processing device 124. After that, the second substrate W2 or the third substrate cleaning processing device 124 is reused, and the number of particles attached to the substrate W is measured after the nth cleaning and before the (n+1)th cleaning.

[0098] like Fig.17As shown, when using the second substrate W2 cleaning processing device 124, the number of fine particles attached to the substrate W can be reduced compared to the case of using the third substrate cleaning processing device 124. The second substrate W2 is different from the third substrate and has a thermal oxide film. Therefore, it is considered that the second substrate W2 is more likely to be charged than the third substrate and is likely to adsorb fine particles by electrostatic force, so that the cleaning processing device 124 can be efficiently cleaned.

[0099] In addition, in the present embodiment, the second substrate W2 is stored in the storage device 125, but it can also be housed in a cassette placed on the placement table 111. In the latter case, the first transfer device 113 takes out the second substrate W2 from the cassette and transfers it to the transfer device 121. Next, the second transfer device 123 takes out the second substrate W2 from the transfer device 121 and transfers it to the processing device 124. After that, the second substrate W2 is returned to the cassette in the reverse process. In this case, the second substrate W2 can be used to clean not only the transfer arm of the second transfer device 123 but also the transfer arm of the first transfer device 113.

[0100] When the second substrate W2 is stored in the storage device 125, the storage device 125 may also have a charging unit (not shown). This charging unit can either charge the second substrate W2 by friction or charge the second substrate W2 by irradiating ions to the second substrate W2. The second transfer device 123 can also make the second substrate W2 charged in the storage device 125 contact the plurality of lifting pins 14 and the second holding portion 12 in sequence in step S201. The content of the present disclosure can also be applied to the cleaning of the lifting pins 14 and the cleaning of the second holding portion 12.

[0101] The processing device 124 may also have a third holding portion 16 to replace the second holding portion 12 as shown in Fig.18 The third holding portion 16 grasps the peripheral edge of the substrate W. Of course, the third holding portion 16 can also grasp the second substrate W2 instead of the substrate W. The third holding portion 16 is disposed at a position above the first holding portion 11. The third holding portion 16 has a pair of movable claws 16A, 16B that sandwich and hold the substrate W. The pair of movable claws 16A, 16B are arranged at intervals in the X-axis direction and are moved closer to or away from each other. In addition, a rotating block (Japanese: 回転コマ) can be used instead of the movable claws 16A, 16B. Three or more rotating blocks can be arranged at intervals along the circumferential direction of the substrate W.

[0102] The plurality of lift pins 14 are lifted and lowered around the first holding portion 11 to transfer the substrate W between the first holding portion 11 or the third holding portion 16 and the transfer arm of the second transfer device 123. The plurality of lift pins 14 are mounted on the Y-axis slider 25a and move in the Y-axis direction together with the first holding portion 11. In addition, the plurality of lift pins 14 may not be mounted on the Y-axis slider 25a, but a large number of lift pins 14 may be provided at intervals in the Y-axis direction.

[0103] The substrate W is delivered to the lifting pins 14 by the transport arm of the second transport device 123, and then delivered to the third holding portion 16 by the lifting pins 14. While the third holding portion 16 holds the periphery of the substrate W, a friction body (not shown) cleans the center of the lower surface of the substrate W. After that, the substrate W is delivered to the lifting pins 14 by the third holding portion 16, and then delivered to the first holding portion 11 by the lifting pins 14. While the first holding portion 11 holds the center of the lower surface of the substrate W, a friction body (not shown) cleans the periphery of the lower surface of the substrate W. At this time, the substrate W is rotated together with the first holding portion 11.

[0104] In this modification, similarly to the above-described embodiment, the first holding portion 11 , the third holding portion 16 , or the lift pins 14 can be cleaned using the second substrate W2 .

[0105] Next, refer to Figure 19-20 , to illustrate an example of a wall portion. Fig.19 and Fig. 20 As shown, a wall portion 17 may also be provided. The wall portion 17 may be provided as shown. Fig. 20 As shown, the nozzle 33 is arranged below the substrate W held by the first holding part 11, and is used to block the processing liquid sprayed from the upper nozzle 33 toward the periphery of the substrate W from going to the first holding part 11. It is possible to prevent the residue of the processing liquid from adhering to the first holding part 11 or the lower surface of the substrate W, thereby preventing the generation of particles. This is particularly effective when the upper nozzle 33 is a two-fluid nozzle. The two-fluid nozzle uses a gas such as N2 gas to crush and atomize the processing liquid and spray it.

[0106] Wall 17 Fig.19 As shown in FIG. 1 , the wall portion 17 is disposed at a position radially inward of the substrate W than the periphery of the substrate W held by the first holding portion 11, and at a position radially outward of the substrate W than the gas ejection ring 15. The gas ejection ring 15 is disposed at a position radially inward of the substrate W than the lower nozzles 31 and 32, and at a position radially outward of the substrate W than the first holding portion 11. Fig.19 As shown, it is arranged at a position radially inner than the periphery of the substrate W, and is arranged at a position radially outer than the gas ejection ring 15 of the substrate W, so that the processing liquid ejected toward the periphery of the substrate W by the upper nozzle 33 can be blocked from going to the first holding part 11.

[0107] like Fig.19 As shown in FIG. 1 , when viewed from above, the wall portion 17 is disposed as a whole at a position radially inward of the substrate W relative to the periphery of the substrate W held by the first holding portion 11. Fig. 20 As shown, it is sufficient to be provided only near the upper nozzle 33. However, the wall portion 17 may also be provided in an annular shape along the periphery of the substrate W held by the first holding portion 11. In the present embodiment, the wall portion 17 is in a flat plate shape, but it may also be in a curved plate shape. The wall portion 17 is provided to protrude upward from the upper surface of the exhaust pipe cover 47.

[0108] The upper surface of the exhaust pipe cover 47 is preferably arranged so as not to rebound the processing liquid ejected toward the periphery of the substrate W by the upper nozzle 33. The exhaust pipe cover 47 is preferably arranged as a whole radially inward of the periphery of the substrate W held by the first holding portion 11 when viewed from above.

[0109] The processing device 124 is as follows Fig. 20 The second wall portion 18 may also be provided as shown. The second wall portion 18 is provided below the substrate W held by the first holding portion 11 in the same manner as the wall portion 17, but is provided at a position radially outward of the substrate W than the wall portion 17. The second wall portion 18 is provided at a position radially outward of the substrate W than the periphery of the substrate W held by the first holding portion 11, and is provided at a position radially inward of the substrate W than the cup 20.

[0110] The second wall portion 18 guides the processing liquid ejected from the upper nozzle 33 toward the periphery of the substrate W downward at the radially inner side of the cup 20 of the substrate W. By narrowing the passage of the processing liquid, the flow of the descending airflow can be enhanced. Thus, the generation of the ascending airflow can be suppressed, thereby suppressing the flying of particles.

[0111] The second wall portion 18 is Fig. 20 As shown, it is sufficient to be provided only near the upper nozzle 33. However, the second wall portion 18 may be provided in a ring shape along the periphery of the substrate W held by the first holding portion 11. In the present embodiment, the second wall portion 18 is in a flat plate shape, but may also be in a curved plate shape.

[0112] During the period when the upper nozzle 33 ejects the processing liquid toward the periphery of the substrate W, it is preferred that the flow rate of the processing liquid ejected from the lower nozzles 31 and 32 be increased compared to the period when the friction body 50 rubs the center of the lower surface of the substrate W. During the period when the upper nozzle 33 ejects the processing liquid toward the periphery of the substrate W, by causing the lower nozzles 31 and 32 to eject the processing liquid at a high flow rate, it is possible to prevent the processing liquid ejected from the upper nozzle 33 from circling around the lower surface of the substrate W, thereby preventing particles from adhering to the gas ejection ring 15 or the first holding portion 11.

[0113] In addition, during the period when the upper nozzle 33 ejects the processing liquid toward the periphery of the substrate W, it is preferable to reduce the ejection flow rate of the gas by the gas ejection ring 15 compared with the period when the friction body 50 rubs the center of the lower surface of the substrate W. During the period when the friction body 50 rubs the center of the lower surface of the substrate W, by causing the gas ejection ring 15 to eject gas at a high flow rate, it is possible to suppress the processing liquid ejected from the lower nozzles 31 and 32 from adhering to the gas ejection ring 15 or the first holding portion 11, thereby suppressing the adhesion of particles to the gas ejection ring 15 or the first holding portion 11.

[0114] The above describes the embodiments of the substrate processing device and the substrate processing method involved in the present disclosure, but the present disclosure is not limited to the above embodiments, etc. Various changes, corrections, substitutions, additions, deletions and combinations can be made within the scope of the claims. These also belong to the technical scope of the present disclosure.

[0115] Description of Reference Numerals

[0116] 100: substrate processing device; 124: processing device (processing unit); 190: control device (control unit); 11: first holding unit; 12: second holding unit; 13: rotation drive unit; 50: friction body (charged unit); W: substrate; W2: second substrate.

Claims

1. A substrate processing device, comprising a processing unit for processing a substrate using a processing liquid, the processing unit comprising a holding unit for holding the substrate horizontally, the holding unit comprising a first holding unit in contact with the center of the lower surface of the substrate, the processing unit comprising a rotation drive unit for rotating the first holding unit around a vertical rotation axis, the substrate processing device comprising: a charging section that charges a second substrate that is prepared separately from the substrate; and A control unit controls the second substrate charged by the charging unit to come into contact with the first holding unit.

2. The substrate processing apparatus according to claim 1, wherein: The charging portion includes a friction body that rubs a lower surface of the second substrate held by the holding portion.

3. The substrate processing apparatus according to claim 2, wherein: A lower nozzle is further provided for supplying an alkaline aqueous solution to a space between the second substrate held by the holding portion and the friction body.

4. The substrate processing apparatus according to claim 3, wherein: The holding portion further includes a second holding portion, the second holding portion being in contact with the lower surface of the second substrate at a radially outer side of the substrate than the first holding portion, The control unit performs the following control: In a state where the second substrate is held horizontally by the second holding portion, the friction body rubs the center of the lower surface of the second substrate; continuously supplying the alkaline aqueous solution to the lower surface of the second substrate from before the rubbing starts to after the rubbing ends; After supplying the alkaline aqueous solution, drying the lower surface of the second substrate by using gas; as well as After the drying, the center of the lower surface of the second substrate is brought into contact with the first holding portion.

5. The substrate processing apparatus according to claim 3, wherein: The holding portion further includes a third holding portion, wherein the third holding portion grasps the periphery of the substrate. The control unit performs the following control: In a state where the second substrate is held horizontally by the third holding portion, the friction body rubs the center of the lower surface of the second substrate; continuously supplying the alkaline aqueous solution to the lower surface of the second substrate from before the rubbing starts to after the rubbing ends; After supplying the alkaline aqueous solution, drying the lower surface of the second substrate by using gas; as well as After the drying, the center of the lower surface of the second substrate is brought into contact with the first holding portion.

6. The substrate processing apparatus according to any one of claims 1 to 5, wherein: The substrate processing apparatus further includes: a storage unit that stores the second substrate; and a transport unit that transports the second substrate between the storage unit and the processing unit. The charging unit charges the second substrate in the storage unit.

7. The substrate processing apparatus according to any one of claims 1 to 5, wherein: At least the lower surface of the second substrate has an oxide film.

8. The substrate processing apparatus according to any one of claims 1 to 5, wherein: The holding portion further includes a plurality of lifting pins, and the plurality of lifting pins are arranged around the first holding portion. The control unit causes the second substrate charged by the charging unit to come into contact with the lift pins.

9. A substrate processing device comprising: A first holding portion that contacts the center of the lower surface of the substrate and holds the substrate horizontally; a rotation driving unit configured to rotate the first holding unit around a vertical rotation axis; an upper nozzle that supplies a processing liquid to an upper surface of the substrate held by the first holding portion; a lower nozzle that supplies a processing liquid to a lower surface of the substrate held by the first holding portion; a gas ejection portion disposed at a position radially inward of the substrate relative to the lower nozzle and radially outward of the substrate relative to the first holding portion, the gas ejection portion ejecting gas toward a lower surface of the substrate held by the first holding portion; a cup surrounding a periphery of the substrate held by the first holding portion; as well as a wall portion, which is disposed below the substrate held by the first holding portion and is used to block the processing liquid sprayed from the upper nozzle toward the periphery of the substrate from going toward the first holding portion, The wall portion is provided at a radially inner side of the substrate than a peripheral edge of the substrate held by the first holding portion, and is provided at a radially outer side of the substrate than the gas ejection portion.

10. A substrate processing method, comprising using a substrate processing device to process a substrate, The substrate processing device includes a processing unit for processing a substrate using a processing liquid, the processing unit includes a holding unit for holding the substrate horizontally, the holding unit includes a first holding unit in contact with the center of the lower surface of the substrate, and the processing unit includes a rotation driving unit for rotating the first holding unit around a vertical rotation axis. The substrate processing method comprises: charging a second substrate prepared separately from the substrate; And the charged second substrate is brought into contact with the first holding portion.

11. The substrate processing method according to claim 10, wherein: The charging of the second substrate includes rubbing a lower surface of the second substrate held by the holding portion with a friction body.

12. The substrate processing method according to claim 11, wherein: The method further includes supplying an alkaline aqueous solution between the second substrate held by the holding portion and the friction body.

13. The substrate processing method according to claim 12, wherein: The holding portion further includes a second holding portion, the second holding portion being in contact with the lower surface of the second substrate at a radially outer side of the substrate than the first holding portion, The substrate processing method further comprises: In a state where the second substrate is held horizontally by the second holding portion, the friction body rubs the center of the lower surface of the second substrate; continuously supplying the alkaline aqueous solution to the lower surface of the second substrate from before the rubbing starts to after the rubbing ends; After supplying the alkaline aqueous solution, drying the lower surface of the second substrate using a gas; and After the drying, the center of the lower surface of the second substrate is brought into contact with the first holding portion.

14. The substrate processing method according to claim 12, wherein: The holding portion further includes a third holding portion, wherein the third holding portion grasps the periphery of the substrate. The substrate processing method further comprises: In a state where the second substrate is held horizontally by the third holding portion, the friction body rubs the center of the lower surface of the second substrate; continuously supplying the alkaline aqueous solution to the lower surface of the second substrate from before the rubbing starts to after the rubbing ends; After supplying the alkaline aqueous solution, drying the lower surface of the second substrate using a gas; and After the drying, the center of the lower surface of the second substrate is brought into contact with the first holding portion.

15. The substrate processing method according to any one of claims 10 to 14, wherein: The substrate processing apparatus further includes: a storage unit that stores the second substrate; and a transport unit that transports the second substrate between the storage unit and the processing unit. The substrate processing method further includes charging the second substrate in the storage unit.

16. The substrate processing method according to any one of claims 10 to 14, wherein: At least the lower surface of the second substrate has an oxide film.

17. The substrate processing method according to any one of claims 10 to 14, wherein: The holding portion further includes a plurality of lifting pins, and the plurality of lifting pins are arranged around the first holding portion. The substrate processing method further includes bringing the charged second substrate into contact with the lift pins. 18 . A substrate processing method, comprising processing a substrate using the substrate processing apparatus according to claim 9 .

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