Reaction chamber, film thickness uniformity monitoring method, film deposition apparatus

Abstract

The application discloses a reaction cavity, a film thickness consistency monitoring method and a film deposition device. The reaction cavity comprises a first cavity, a second cavity, an exhaust port, a first film thickness sensor and a second film thickness sensor. The exhaust port is arranged between the first cavity and the second cavity. The first film thickness sensor is arranged in the first cavity and adjacent to the exhaust port. The second film thickness sensor is arranged in the second cavity and adjacent to the exhaust port. The method comprises the following steps: obtaining a first film thickness detected by the first film thickness sensor and a second film thickness detected by the second film thickness sensor; and comparing the first film thickness with the second film thickness to determine a film thickness difference between the first film thickness and the second film thickness. The application realizes real-time online monitoring of film thickness of two cavities, greatly saves the measurement time, accelerates the process development progress and assists in improving the consistency of film thickness of the two cavities.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a reaction cavity, a film thickness consistency monitoring method and a film deposition device. BACKGROUND

[0002] With the rapid development of semiconductor technology, the miniaturization and integration of devices are continuously improved, and the productivity and quality requirements of semiconductor film processes are increasingly stringent. In the field of high-end semiconductor manufacturing, two-cavity isolation coating equipment is favored because it can effectively improve production efficiency. For two-cavity isolation coating equipment, the symmetry of the chamber structure design, the precision of the material processing inside the chamber, and different batches of materials will all affect the consistency of the deposited film between the cavities. Therefore, in practical applications, ensuring the thickness and performance consistency of the film produced by the two-cavity coating equipment has become one of the key factors restricting technological advancement. To achieve this goal, the measurement of film thickness becomes crucial. However, traditional film thickness measurement methods mostly use offline measurement methods, that is, after completing the coating process, the wafer needs to be transferred from the coating equipment to a dedicated measurement device for detection, which takes a long time. Especially in the early stages of new process development, since the entire process flow needs to be run and subsequent measurements are required, it takes a long time, which accounts for a large proportion of the development progress of the entire equipment process. SUMMARY

[0003] Embodiments of the present application provide a reaction cavity, a film thickness consistency monitoring method and a film deposition device, aiming to solve the problem of long time consumption in existing film thickness measurement.

[0004] In a first aspect, the present application provides a reaction cavity, comprising: a first cavity, a second cavity, an exhaust port, a first film thickness sensor and a second film thickness sensor, the exhaust port is arranged between the first cavity and the second cavity, the first film thickness sensor is arranged in the first cavity and adjacent to the exhaust port, and the second film thickness sensor is arranged in the second cavity and adjacent to the exhaust port.

[0005] Further, the reaction cavity further comprises a first gas inlet valve and a second gas inlet valve, the first gas inlet valve is in communication with the first cavity, and the first gas inlet valve is used to adjust the gas flow of the first cavity, the second gas inlet valve is in communication with the second cavity, and the second gas inlet valve is used to adjust the gas flow of the second cavity.

[0006] Further, the reaction cavity further comprises a first gas inlet pipeline and a second gas inlet pipeline, the first gas inlet pipeline is connected with the first cavity, the second gas inlet pipeline is connected with the second cavity, the first gas inlet valve is arranged at one end of the first gas inlet pipeline close to the first cavity, and the second gas inlet valve is arranged at one end of the second gas inlet pipeline close to the second cavity.

[0007] Further, the first film thickness sensor is inserted into the bottom of the cavity, and a probe surface of the first film thickness sensor is exposed in the first cavity; and the second film thickness sensor is inserted into the bottom of the cavity, and a probe surface of the second film thickness sensor is exposed in the second cavity; and / or,

[0008] The top of the first cavity is provided with a first baffle, the first film thickness sensor is inserted into the first baffle, and a probe surface of the first film thickness sensor is exposed in the first cavity; and the top of the second cavity is provided with a second baffle, the second film thickness sensor is inserted into the second baffle, and a probe surface of the second film thickness sensor is exposed in the second cavity.

[0009] Further, the position of the first film thickness sensor in the first cavity is symmetrical to the position of the second film thickness sensor in the second cavity.

[0010] Further, the first film thickness sensor and the second film thickness sensor are both quartz crystal oscillators.

[0011] In a second aspect, the present application further provides a film thickness uniformity monitoring method, which is applied to the reaction cavity, and the method comprises:

[0012] acquiring a first film thickness detected by the first film thickness sensor and a second film thickness detected by the second film thickness sensor;

[0013] comparing the first film thickness with the second film thickness to determine a film thickness difference between the first film thickness and the second film thickness.

[0014] Further, the first gas inlet valve and / or the second gas inlet valve are adjusted according to the film thickness difference.

[0015] Further, a to-be-adjusted gas flow is determined according to the film thickness difference; the to-be-adjusted gas flow is input into a preset flow adjustment formula for calculation to output a flow capacity value corresponding to the first gas inlet valve and / or the second gas inlet valve; and the first gas inlet valve and / or the second gas inlet valve are adjusted according to the flow capacity value.

[0016] In a third aspect, the present application further provides a film deposition device, which comprises a reaction cavity, and the reaction cavity is the above-mentioned reaction cavity, and the reaction cavity is monitored by the above-mentioned film thickness uniformity monitoring method.

[0017] This invention provides a reaction chamber, a method for monitoring film thickness consistency, and a film deposition apparatus. The reaction chamber includes a first chamber, a second chamber, an exhaust port, a first film thickness sensor, and a second film thickness sensor. The exhaust port is located between the first and second chambers. The first film thickness sensor is located in the first chamber and adjacent to the exhaust port, allowing the reactant gas to pass through the probe surface of the first film thickness sensor, depositing a film on its probe surface and thus measuring the first film thickness. Similarly, the second film thickness sensor is located in the second chamber and adjacent to the exhaust port, allowing the reactant gas to pass through the probe surface of the second film thickness sensor, depositing a film on its probe surface and thus measuring the second film thickness. This invention enables real-time online monitoring of the film thickness in both chambers, significantly saving measurement time, accelerating process development, and helping to improve the consistency of film thickness performance between the two chambers. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the following description of the embodiments will be briefly introduced. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 A schematic diagram of the reaction chamber according to an embodiment of the present invention is shown;

[0020] Figure 2 A schematic diagram of the reaction chamber according to another embodiment of the present invention is shown;

[0021] Figure 3 A schematic flowchart of the thin film thickness consistency monitoring method according to an embodiment of the present invention is shown;

[0022] Figure 4 A flowchart illustrating the steps of another embodiment of the thin film thickness consistency monitoring method of the present invention is shown.

[0023] Figure 5 A flowchart illustrating the sub-steps of the thin film thickness consistency monitoring method according to an embodiment of the present invention is shown.

[0024] Figure label:

[0025] 1. First cavity; 2. Second cavity; 3. Air extraction port; 4. First film thickness sensor; 5. Second film thickness sensor; 6. Heating plate; 7. First air intake pipe; 71. First air intake valve; 8. Second air intake pipe; 81. Second air intake valve. Detailed Implementation

[0026] With reference to the accompanying drawings, the technical solutions in the embodiments of the present application will be described clearly and completely. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments of the present application, all the other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0027] The terms such as "upper", "lower", "front", "back", "left", "right", "inner", "outer", "side" and the like mentioned in the present application are only the directions of the accompanying drawings. Therefore, the terms are used to illustrate and understand the present application, but not to limit the present application. In addition, in the drawings, the structures similar or identical to each other are denoted by the same reference numerals.

[0028] The dual-chamber thin film deposition equipment is favored in the semiconductor industry due to its high production efficiency. However, although such equipment can significantly improve the yield, in actual operation, the thickness of the thin films deposited by the two chambers often appears inconsistent, and such thickness difference may affect the performance and quality of the final product. In order to ensure the consistency of the thin films deposited by the two chambers, effective measures must be taken to monitor and regulate the deposition process of the thin films. In particular, in the early stage of new process development, the measured results are often different from the expected results, so it is often necessary to measure the results and then optimize them after feedback. The measurement of the thickness of the thin film needs to run through the entire process flow, and then the thin film is transported to a dedicated measurement machine for measurement of the thickness of the thin film, so as to know whether the thickness of the two chambers is consistent. It takes a long time and delays the progress of process development.

[0029] Therefore, the embodiments of the present application provide a reaction chamber, a thin film thickness consistency monitoring method and a thin film deposition equipment to solve the problem of long time consumption in the existing thin film thickness measurement. Two film thickness sensors are used to detect the thickness of the thin films deposited by the two chambers, so as to monitor the thickness of the thin films on line and assist in improving the consistency of the film thickness of the two chambers.

[0030] To solve the problem of long time consumption in the film thickness measurement, the embodiments of the present application have the following specific ideas:

[0031] The film thickness sensors are arranged in the two cavities respectively, and the two film thickness sensors are close to the exhaust port. In the film deposition, the process gas can pass through the probe surface of the two film thickness sensors, and part of the film is deposited on the probe surface. Therefore, the film thickness sensor can detect the film thickness. For the double-cavity film deposition equipment, the thickness of the films deposited in the two cavities should be consistent in normal cases. Therefore, the film thickness detected by the two film thickness sensors should also be consistent. If the film thickness detected by the two film thickness sensors is inconsistent, it means that the film thickness deposited in the two cavities is inconsistent. Therefore, the film thickness sensor can detect the inconsistency of the film thickness in the two cavities in advance, without the need to run the entire process flow and then send it to the measurement machine for measurement. This greatly shortens the measurement time and speeds up the process development progress.

[0032] In order to better understand the above technical solutions, the above technical solutions will be described in detail below in combination with the drawings in the specification and specific embodiments.

[0033] Please refer to Figures 1-2 The embodiment of the present application shows a reaction cavity, which comprises a first cavity 1, a second cavity 2, an exhaust port 3, a first film thickness sensor 4 and a second film thickness sensor 5. The exhaust port 3 is arranged between the first cavity 1 and the second cavity 2. The first film thickness sensor 4 is arranged in the first cavity 1 and adjacent to the exhaust port 3. The second film thickness sensor 5 is arranged in the second cavity 2 and adjacent to the exhaust port 3.

[0034] Specifically, the reaction cavity of the embodiment is a double-cavity structure, including a first cavity 1 and a second cavity 2, the first cavity 1 and the second cavity 2 are arranged adjacently, an exhaust channel is arranged at the joint of the first cavity 1 and the second cavity 2, the end of the exhaust channel is an exhaust port 3, the exhaust port 3 is located in the middle of the first cavity 1 and the second cavity 2, that is, half of the exhaust port 3 is located in the first cavity 1 and the other half is located in the second cavity 2. A first film thickness sensor 4 is arranged in the first cavity 1, and a second film thickness sensor 5 is arranged in the second cavity 2, and the first film thickness sensor 4 and the second film thickness sensor 5 are both arranged near the exhaust port 3. In this way, when the exhaust channel generates negative pressure, the process gas is sucked into the exhaust port 3, and the first film thickness sensor 4 and the second film thickness sensor 5 are near the exhaust port 3, so the process gas can pass through the probe surface of the first film thickness sensor 4 and the second film thickness sensor 5, and then a part of the film is deposited on the probe surface, and the first film thickness sensor 4 and the second film thickness sensor 5 can detect the thickness of the film deposited on the probe surface respectively. The first film thickness sensor 4 and the second film thickness sensor 5 are non-contact sensors, and the first film thickness sensor 4 and the second film thickness sensor 5 of the embodiment both use a quartz crystal oscillator. It should be noted that there are many types of film thickness sensors, for example, capacitive type, infrared reflection type, etc., as long as they can measure the film thickness, which is not limited here. Although the first film thickness sensor 4 and the second film thickness sensor 5 do not directly measure the thickness of the film deposited on the wafer surface, by comparing whether the film thickness detected by the first film thickness sensor 4 and the second film thickness sensor 5 is consistent, it can be detected whether the film thickness deposited on the wafer surface by the two cavities is consistent, that is, the consistency of the film thickness of the two cavities can be indirectly reflected. Because if the thickness of the film deposited by the two cavities is consistent, the film thickness detected by the two film thickness sensors should also be consistent, and if the thickness of the film deposited by the two cavities is inconsistent, the film thickness detected by the two film thickness sensors must also be inconsistent. Therefore, by comparing the film thickness detected by the two film thickness sensors, the consistency of the film thickness of the two cavities can be judged, thereby assisting to improve the consistency of the film thickness of the two cavities.

[0035] Through the embodiment, by arranging two film thickness sensors near the exhaust port 3 between the two cavities to measure the film thickness, the film thickness can be characterized online, the film thickness performance of the two cavities can be monitored in real time, and the consistency of the film performance of the two cavities can be improved.

[0036] In an embodiment, the reaction chamber further comprises a first gas inlet valve 71 and a second gas inlet valve 81, the first gas inlet valve 71 being in communication with the first cavity 1 and being used to adjust the gas flow rate of the first cavity 1, and the second gas inlet valve 81 being in communication with the second cavity 2 and being used to adjust the gas flow rate of the second cavity 2. Specifically, the reaction chamber of the present embodiment is a double-cavity structure, and thus has two gas inlet pipelines, i.e., a first gas inlet pipeline 7 and a second gas inlet pipeline 8, the first gas inlet pipeline 7 being the gas inlet pipeline of the first cavity 1, and the second gas inlet pipeline 8 being the gas inlet pipeline of the second cavity 2. The first gas inlet pipeline 7 is provided with the first gas inlet valve 71, which can adjust the gas flow rate of the first cavity 1. The second gas inlet pipeline 8 is provided with the second gas inlet valve 81, which can adjust the gas flow rate of the second cavity 2. It should be noted that the first gas inlet valve 71 and the second gas inlet valve 81 can be various types of valves, which are not limited herein. By controlling the gas flow rate, the deposition rate of the thin film can be changed, and thus the thickness of the thin film deposition can be affected. Therefore, when the film thicknesses of the two cavities are found to be inconsistent, the process can be corrected in time, and by adjusting the first gas inlet valve 71 or the second gas inlet valve 81, the gas flow rate of the first cavity 1 or the second cavity 2 can be changed, the deposition rate of the thin film of the two cavities can be controlled, and thus the consistency of the film thicknesses of the two cavities can be maintained.

[0037] In the embodiment, the reaction cavity further comprises a first gas inlet pipeline 7 and a second gas inlet pipeline 8, the first gas inlet pipeline 7 is connected with the first cavity 1, the second gas inlet pipeline 8 is connected with the second cavity 2, the first gas inlet valve 71 is arranged at one end of the first gas inlet pipeline 7 close to the first cavity 1, and the second gas inlet valve 81 is arranged at one end of the second gas inlet pipeline 8 close to the second cavity 2. Specifically, the one end of the first gas inlet pipeline 7 close to the first cavity 1 is a proximal end, and the one end of the first gas inlet pipeline 7 away from the first cavity 1 is a distal end. The one end of the second gas inlet pipeline 8 close to the second cavity 2 is a proximal end, and the one end of the second gas inlet pipeline 8 away from the second cavity 2 is a distal end. The first gas inlet valve 71 is arranged at the proximal end, that is, close to the first cavity 1, and similarly, the second gas inlet valve 81 is also arranged at the proximal end, that is, close to the second cavity 2. The purpose of the arrangement is to facilitate the close-range control of the gas flow. On the one hand, when the valve is installed close to the cavity, the distance between the valve and the cavity is short, which can reduce the time delay of the gas from the valve to the cavity, which means that once the valve is adjusted, the change of the flow will quickly reflect in the cavity, so as to respond to the process requirements more quickly. On the other hand, arranging the valve close to the cavity can reduce the dead zone and the stagnant space in the pipeline, which can reduce the flow fluctuation caused by the stagnation of the gas in the long pipeline. In addition, the small adjustment of the valve can directly affect the flow change in the cavity, thereby improving the accuracy of the flow control. On the other hand, when the valve is close to the cavity, the loss of the gas in the transmission process is reduced. The long pipeline can cause part of the gas to fail to enter the cavity in time, especially in the case of frequent adjustment of the flow, the loss of this part of the gas will affect the overall flow.

[0038] In an embodiment, the first film thickness sensor 4 is inserted into the bottom of the cavity, and the probe surface of the first film thickness sensor 4 is exposed in the first cavity 1; and the second film thickness sensor 5 is inserted into the bottom of the cavity, and the probe surface of the second film thickness sensor 5 is exposed in the second cavity 2.

[0039] Specifically, the first film thickness sensor 4 and the second film thickness sensor 5 have various installation modes in the first cavity 1 and the second cavity 2 respectively, and the embodiment proposes a relatively optimal installation mode. Specifically, the first film thickness sensor 4 and the second film thickness sensor 5 are in the shape of a long strip as a whole. The first film thickness sensor 4 is inserted into the inside of the first cavity 1 from the bottom of the first cavity 1, the probe surface of the first film thickness sensor 4 passes through the cavity to the inside of the first cavity 1, and the probe surface of the first film thickness sensor 4 is exposed in the first cavity 1, so that the probe surface thereof can be deposited to the thin film in the cavity. Similarly, the second film thickness sensor 5 is inserted into the inside of the second cavity 2 from the bottom of the second cavity 2, the probe surface of the second film thickness sensor 5 passes through the cavity to the inside of the second cavity 2, and the probe surface of the second film thickness sensor 5 is exposed in the second cavity 2, so that the probe surface thereof can be deposited to the thin film in the cavity.

[0040] In an embodiment, the top of the first cavity 1 is provided with a first baffle, the first film thickness sensor 4 is inserted into the first baffle, and the probe surface of the first film thickness sensor 4 is exposed in the first cavity 1; and the top of the second cavity 2 is provided with a second baffle, the second film thickness sensor 5 is inserted into the second baffle, and the probe surface of the second film thickness sensor 5 is exposed in the second cavity 2. Specifically, the first film thickness sensor 4 and the second film thickness sensor 5 have various installation modes in the first cavity 1 and the second cavity 2 respectively, and the embodiment proposes another relatively optimal installation mode. Specifically, the first film thickness sensor 4 and the second film thickness sensor 5 are in the shape of a long strip as a whole. The first cavity 1 has a first baffle, which is arranged above the first cavity 1. The second cavity 2 has a second baffle, which is arranged above the second cavity 2. The first film thickness sensor 4 is inserted into the inside of the first cavity 1 from the first baffle, the probe surface of the first film thickness sensor 4 passes through the first baffle to the inside of the first cavity 1, and the surface of the first film thickness sensor 4 is exposed in the first cavity 1, so that the probe surface thereof can be deposited to the thin film in the cavity. Similarly, the second film thickness sensor 5 is inserted into the inside of the second cavity 2 from the second baffle, the probe surface of the second film thickness sensor 5 passes through the second baffle to the inside of the second cavity 2, and the surface of the second film thickness sensor 5 is exposed in the second cavity 2, so that the probe surface thereof can be deposited to the thin film in the cavity.

[0041] In an embodiment, the position of the first film thickness sensor 4 in the first cavity 1 is symmetrical to the position of the second film thickness sensor 5 in the second cavity 2. Specifically, the first film thickness sensor 4 and the second film thickness sensor 5 are arranged at positions symmetrical to each other, so as to ensure that the positions of the two in the respective cavities are consistent, so that the thickness of the thin film deposited by the probe surface is consistent, and the position factor is ensured not to disturb the monitoring result.

[0042] In summary, by detecting the film thickness in the two cavities by the two film thickness sensors of the embodiment, the film thickness can be characterized on line, the film thickness performance of the two cavities can be monitored in real time, the process can be corrected in time, and the consistency of the film performance of the two cavities can be improved. When the film thickness is inconsistent, it can be detected in time, time is saved, and especially during the exploration period, the process development is accelerated, and it is not necessary to run the entire process flow to measure again, thereby accelerating the development progress.

[0043] With reference to Figure 3 The embodiment of the present application also provides a film thickness consistency monitoring method, which is applied to the reaction cavity of the above embodiment, and the reaction cavity has been described in detail in the above embodiment. For the sake of brevity of the description, it will not be described here again. The method comprises the following steps: S1-S2.

[0044] S1, obtaining a first film thickness detected by the first film thickness sensor 4 and a second film thickness detected by the second film thickness sensor 5;

[0045] S2, comparing the first film thickness with the second film thickness to determine a film thickness difference between the first film thickness and the second film thickness.

[0046] In the embodiment, the first film thickness sensor 4 and the second film thickness sensor 5 are both connected with the controller, the controller can receive the film thickness data detected by the first film thickness sensor 4 and the second film thickness sensor 5 and perform corresponding analysis and processing. The controller is also connected with the first gas inlet valve 71 and the second gas inlet valve 81, and can control and adjust the first gas inlet valve 71 and the second gas inlet valve 81. The controller is also connected with the display, and the film thickness data detected by the first film thickness sensor 4 and the second film thickness sensor 5 can be displayed through the display, so that the test personnel can know the film thickness performance of the two cavities in real time.

[0047] The probe surface of the first film thickness sensor 4 has a portion of the film deposited in the first cavity 1 to detect the first film thickness, and the probe surface of the second film thickness sensor 5 has a portion of the film deposited in the second cavity 2 to detect the second film thickness. It should be noted that the film deposited on the probe surface of the first film thickness sensor 4 and the second film thickness sensor 5 can be blown away by the blowing gas during the cavity cleaning process, so that the probe surface can still have a portion of the film deposited and still be able to detect the first film thickness and the second film thickness in the next wafer process, to meet the detection needs of the next wafer process. The first film thickness sensor 4 and the second film thickness sensor 5 of the embodiment use a quartz crystal oscillator, and the detection principle of the quartz crystal oscillator mainly uses two effects of the quartz crystal, namely, the piezoelectric effect and the mass loading effect. The quartz crystal is an ionic crystal, and due to the regular distribution of the crystal lattice, when mechanical deformation occurs, such as stretching or compression, an electric polarization phenomenon occurs, which is called piezoelectricity. Under a pressure of 9.8×104Pa, positive and negative charges appear on the two surfaces of the quartz crystal under pressure, generating a potential difference of about 0.5V. The piezoelectric effect has an inverse phenomenon, that is, the size of the quartz crystal changes in the electric field, and the quartz crystal is stretched or shortened, which is called electrostriction. The natural frequency of the piezoelectric effect of the quartz crystal depends not only on its geometric size, cutting type, but also on the thickness of the chip. When a certain film layer is plated on the chip, the thickness of the chip increases, and the natural frequency of the chip will decrease accordingly. This effect of the quartz crystal is the mass loading effect. The quartz crystal film thickness monitoring is to monitor the thickness of the deposited film by measuring the frequency or the change of the frequency-related parameters, which can be referred to the following formula:

[0048]

[0049] wherein, ρ M is the film density, ρ Q is the quartz density, f is the natural frequency of the quartz crystal, N is the frequency constant depending on the geometric size and cutting type of the quartz crystal, and Δd M is the film thickness change amount. After detecting the first film thickness and the second film thickness, the first film thickness and the second film thickness are compared and subtracted to obtain a film thickness difference. The film thickness difference can be used to judge the consistency of the film thickness of the two cavities. If the film thickness difference tends to zero, it means that the film thickness of the two cavities is consistent. If the film thickness difference is greater than a film thickness difference threshold, it means that the film thickness of the two cavities is inconsistent, and the R&D personnel are prompted in time to make design adjustments. The R&D personnel can timely adjust the process parameters or the cavity structure to continue optimization, without running through the entire process flow to measure the film thickness again, thereby accelerating the product development progress.

[0050] In an embodiment, as Figure 4As shown, the film thickness uniformity monitoring method further comprises a step S3.

[0051] S3, adjusting the first gas inlet valve 71 and / or the second gas inlet valve 81 according to the film thickness difference value.

[0052] Specifically, when the film thickness difference value is greater than the film thickness difference threshold, the film thicknesses of the two cavities are inconsistent, and the process parameters need to be adjusted. The embodiment is achieved by controlling the first gas inlet valve 71 and the second gas inlet valve 81, because the first gas inlet valve 71 and the second gas inlet valve 81 can change the gas flow of the first cavity 1 and the second cavity 2, thereby changing the first film thickness and the second film thickness. Specifically, if the detected first film thickness is greater than the second film thickness, then the second gas inlet valve 81 is adjusted to increase the gas flow of the second cavity 2, thereby increasing the second film thickness, so that the adjusted second film thickness is consistent with the first film thickness. If the detected first film thickness is less than the second film thickness, then the first gas inlet valve 71 is adjusted to increase the gas flow of the first cavity 1, thereby increasing the first film thickness, so that the adjusted first film thickness is consistent with the second film thickness. The adjustment degree of the first gas inlet valve 71 and the second gas inlet valve 81 is determined by the film thickness difference value, the greater the film thickness difference value, the greater the adjustment degree, and vice versa. Through the feedback adjustment mechanism of the embodiment, the film thickness of the smaller cavity is compensated, so that the film thicknesses of the two cavities are as consistent as possible.

[0053] In an embodiment, as shown in Figure 5 The step S3 comprises S31-S33.

[0054] S31, determining the to-be-adjusted gas flow according to the film thickness difference value;

[0055] S32, inputting the to-be-adjusted gas flow into a preset flow adjustment formula for calculation to output a flow capacity value corresponding to the first gas inlet valve 71 and / or the second gas inlet valve 81;

[0056] S33, adjusting the first gas inlet valve and / or the second gas inlet valve according to the flow capacity value.

[0057] Specifically, first, the intake flow to be adjusted is calculated according to the film thickness difference, that is, how much intake flow is needed to compensate for enough film thickness difference. The intake flow has a corresponding relationship with the thickness of the deposited film, which can be measured in experiments. After determining the intake flow to be adjusted, the first intake valve 71 or the second intake valve 81 can be adjusted according to the intake flow to be adjusted, specifically, the flow capacity value of the valve, that is, the CV value. The CV value refers to the volume flow or mass flow of the medium flowing through the valve per unit time under the test conditions, that is, the flow capacity of the valve, under the condition that the pipeline maintains a constant pressure. In short, the CV value is a quantity used to measure the valve passing coefficient. Reducing the CV value can limit the gas entering the chamber, increasing the CV value can increase the gas entering the chamber, thereby affecting the film thickness. The CV value can be calculated by inputting the intake flow to be adjusted into the preset flow adjustment formula. The preset flow adjustment formula is as follows:

[0058]

[0059] wherein, CV is the flow capacity value, Q is the flow in gallons per minute, P is the pressure drop across the valve, and G is the specific gravity of the fluid. The CV value can be calculated by the above preset flow adjustment formula, and the CV value can be adjusted by rotating the adjusting device on the valve. After the CV value is adjusted, the film thickness deposited in the first cavity 1 and the film thickness deposited in the second cavity 2 tend to be consistent, thereby ensuring the consistency of the film thickness of the two cavities.

[0060] In summary, in the embodiment, the first film thickness sensor 4 is arranged in the first cavity 1 and adjacent to the exhaust port 3, so that the reaction gas can pass through the probe surface of the first film thickness sensor 4, and the probe surface of the first film thickness sensor 4 is deposited with a film, thereby the first film thickness can be measured. Similarly, the second film thickness sensor 5 is arranged in the second cavity 2 and adjacent to the exhaust port 3, so that the reaction gas can pass through the probe surface of the second film thickness sensor 5, and the probe surface of the second film thickness sensor 5 is deposited with a film, thereby the second film thickness can be measured. The real-time online monitoring of the film thickness of the two cavities is realized. The film thickness difference value is calculated by comparing the first film thickness and the second film thickness, and the film thickness difference value can represent whether the film thickness of the two cavities is consistent. The film thickness of the two cavities can be known in real time, without measuring the film thickness after running the entire process, thereby greatly saving the measurement time, accelerating the process development progress, and assisting in improving the consistency of the film thickness of the two cavities.

[0061] The embodiment of the present application also provides a film deposition device, which comprises a reaction cavity, wherein the reaction cavity is the reaction cavity of the above-mentioned embodiment, and the reaction cavity is monitored by the film thickness consistency monitoring method of the above-mentioned embodiment.

[0062] By the film thickness consistency monitoring method of the embodiment, the reaction cavities are monitored, real-time online monitoring of film thickness of two cavities can be realized, time of measurement is greatly saved, process development progress is accelerated, and consistency of film thickness of two cavities is assisted to improve.

[0063] The above merely illustrates the specific embodiments of the present application, but the protection scope of the present application is not limited thereto, any person skilled in the art can easily think of various equivalent modifications or replacements within the technical range disclosed by the present application, and these modifications or replacements shall be covered within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A reaction chamber, characterized in that, include: The system comprises a first cavity, a second cavity, an air extraction port, a first film thickness sensor, and a second film thickness sensor. The air extraction port is located between the first cavity and the second cavity, with one half of the air extraction port in the first cavity and the other half in the second cavity. The first film thickness sensor is located in the first cavity and adjacent to the air extraction port, and the second film thickness sensor is located in the second cavity and adjacent to the air extraction port. The positions of the first film thickness sensor in the first cavity and the second film thickness sensor in the second cavity are symmetrical.

2. The reaction chamber according to claim 1, characterized in that, It also includes a first intake valve and a second intake valve. The first intake valve is connected to the first cavity and is used to adjust the intake flow rate of the first cavity. The second intake valve is connected to the second cavity and is used to adjust the intake flow rate of the second cavity.

3. The reaction chamber according to claim 2, characterized in that, It also includes a first intake pipe and a second intake pipe, the first intake pipe being connected to the first cavity, the second intake pipe being connected to the second cavity, the first intake valve being located at one end of the first intake pipe near the first cavity, and the second intake valve being located at one end of the second intake pipe near the second cavity.

4. The reaction chamber according to claim 1, characterized in that, The first film thickness sensor is inserted into the bottom of the cavity, and the probe surface of the first film thickness sensor is exposed in the first cavity; and the second film thickness sensor is inserted into the bottom of the cavity, and the probe surface of the second film thickness sensor is exposed in the second cavity; And / or, The first cavity has a first baffle at its top, the first film thickness sensor is inserted into the first baffle, and the probe surface of the first film thickness sensor is exposed in the first cavity; and the second cavity has a second baffle at its top, the second film thickness sensor is inserted into the second baffle, and the probe surface of the second film thickness sensor is exposed in the second cavity.

5. The reaction chamber according to claim 1, characterized in that, Both the first film thickness sensor and the second film thickness sensor are quartz crystal oscillators.

6. A method for monitoring the consistency of film thickness, characterized in that, Applied to the reaction chamber according to any one of claims 1-5, the method comprises: Obtain the first film thickness detected by the first film thickness sensor and the second film thickness detected by the second film thickness sensor; The thickness of the first film is compared with the thickness of the second film to determine the thickness difference between the first film thickness and the second film thickness. The first intake valve and / or the second intake valve are adjusted according to the film thickness difference to bring the film thickness difference close to zero.

7. The method according to claim 6, characterized in that, The step of adjusting the first intake valve and / or the second intake valve according to the film thickness difference includes: The intake flow rate to be adjusted is determined based on the film thickness difference. The intake flow rate to be adjusted is input into a preset flow rate adjustment formula for calculation to output the flow capacity value corresponding to the first intake valve and / or the second intake valve; The first intake valve and / or the second intake valve are adjusted according to the flow capacity value.

8. A thin film deposition apparatus, characterized in that it includes a reaction chamber, the reaction chamber being the reaction chamber according to any one of claims 1-6, and the reaction chamber being monitored by the thin film thickness consistency monitoring method according to any one of claims 6-7.

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