A method and system for detecting and analyzing crystal defects

Abstract

The present invention provides a method and system for detecting and analyzing crystal defects, belonging to the technical field of crystal detection, including: Step 1: Heating and cooling the crystal, obtaining the resistivity under different sintering conditions and determining the concentration of defects; Step 2: Determining that the behavior of carriers is affected by the attraction and inhibition of defects, determining the current response after injecting carriers, and determining the type of defects; Step 3: Obtaining the light absorption process of the crystal, and determining the migration dynamics of defects according to the transition time and relaxation time of photoelectrons; Step 4: Creating a numerical model, predicting the defect behavior of the crystal according to temperature-dependent carrier transport, and obtaining the kinetic process of defects; Step 5: Performing regression analysis on the concentration, type, migration dynamics and kinetic process of defects, extracting the characteristic parameters of defects, and realizing the detection and analysis of crystal defects. It solves the problems of high cost, slow detection speed, limited detection depth and influence on material properties in crystal defect detection.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal detection, and particularly to a crystal defect detection and analysis method and system. Background Art

[0002] With the rapid development of materials science, crystals affect the physical, chemical, and mechanical properties of materials. Therefore, the detection of crystal defects is an important technology.

[0003] However, traditional crystal defect detection requires professional technicians to perform operations and data analysis. Moreover, the operation is complex, the detection cost is high, and the detection speed is slow. At the same time, the detection technology is too superficial, the detection depth is limited, and the defects inside the crystal cannot be accurately obtained, which affects the performance of the material and cannot be used in the production of semiconductor devices.

[0004] Therefore, the present invention proposes a crystal defect detection and analysis method and system. Summary of the Invention

[0005] The present invention provides a crystal defect detection and analysis method and system to solve the defects in the prior art that traditional crystal defect detection requires professional technicians to perform operations and data analysis, and the operation is complex, the detection cost is high, and the detection speed is slow. At the same time, the detection technology is too superficial, the detection depth is limited, and the defects inside the crystal cannot be accurately obtained, which affects the performance of the material and cannot be used in the production of semiconductor devices.

[0006] On the one hand, the present invention provides a crystal defect detection and analysis method, including:

[0007] Step 1: By heating and cooling the crystal, obtain the resistivity of the crystal under different sintering conditions, and determine the concentration of defects according to the resistivity;

[0008] Step 2: Determine that the behavior of carriers is affected by the attraction and inhibition of defects according to the charge injection technology, determine the current response and resistance change after injecting carriers according to the attraction and inhibition effects, and determine the type of defects according to the current response and resistance change;

[0009] Step 3: Obtain the light absorption process of the crystal under different lights according to the light absorption spectrum, determine the transition time and relaxation time of photoelectrons, and determine the migration dynamics of defects according to the transition time and relaxation time of photoelectrons;

[0010] Step 4: Create a numerical model, and predict the defect behavior of the crystal at different temperatures according to the temperature-dependent carrier transport and defect motion, and obtain the kinetic process of defects;

[0011] Step 5: Perform regression analysis on the concentration, type, migration kinetics, and kinetic process of the defects, extract the characteristic parameters of the defects, and realize the defect detection and analysis of the crystal according to the characteristic parameters.

[0012] According to a crystal defect detection and analysis method provided by the present invention, by heating and cooling the crystal, the resistivity of the crystal under different sintering conditions is obtained, and the concentration of the defects is determined according to the resistivity, including:

[0013] Determine the type of the target crystal according to X-ray diffraction, and determine the heating temperature range and cooling temperature range of the crystal according to the type;

[0014] Heat and cool the crystal at different temperatures according to the heating temperature range and cooling temperature range in combination with the heating rate and cooling rate;

[0015] Obtain the resistivity of the crystal under different sintering conditions based on the four-point probe method according to the heating and cooling results;

[0016] Determine the movement of electrons according to the resistivity, and determine the conductivity of the crystal according to the movement of electrons;

[0017] Determine the conductivity of the crystal according to the conductivity of the crystal in combination with the physical parameters of the crystal, and determine the concentration of the defects according to the conductivity.

[0018] According to a crystal defect detection and analysis method provided by the present invention, it is determined that the behavior of the carriers is affected by the attraction and inhibition of the defects according to the charge injection technology, the current response and resistance change after injecting the carriers are determined according to the attraction and inhibition effects, and the type of the defects is determined according to the current response and resistance change, including:

[0019] Introduce external charges into the crystal by ion implantation, continuously scan the area including the carrier injection area, and obtain the surface potential map of the scanned area;

[0020] Determine the behavior ability of the carriers in the crystal according to the surface potential map, and determine the influence of the attraction and inhibition of the carriers by the defects according to the behavior ability;

[0021] Determine the electrical parameters after injecting the carriers according to the attraction and inhibition effects;

[0022] Determine the current response and resistance change according to the electrical parameters;

[0023] Determine the response parameters and resistance change trend according to the current response and resistance change, and determine the type of the defects according to the response parameters and resistance change trend.

[0024] A method for detecting and analyzing crystal defects provided by the present invention obtains the light absorption process of a crystal under different lights according to the light absorption spectrum, determines the transition time and relaxation time of photoelectrons, and determines the migration dynamics of defects according to the transition time and relaxation time of photoelectrons, including:

[0025] Obtain the spectral dark lines of the crystal under lights of different wavelengths according to the light absorption spectrum, and determine the energy level transition of the crystal according to the spectral dark lines;

[0026] Determine the light absorption process of the crystal under different lights according to the energy level transition of the crystal;

[0027] Determine the transition time and relaxation time of photoelectrons according to the light absorption process, and obtain defect information that causes the shortening of the carrier lifetime according to the transition time and relaxation time of photoelectrons;

[0028] Determine the migration dynamics of defects according to the defect information.

[0029] A method for detecting and analyzing crystal defects provided by the present invention creates a numerical model, and predicts the defect behavior of the crystal at different temperatures according to temperature-dependent carrier transport and defect motion, and obtains the kinetic process of defects, including:

[0030] Create a numerical model according to the Monte Carlo method, and input temperature-dependent carrier transport and defect motion into the numerical model;

[0031] Obtain the prediction results of the numerical model, and determine the defect behavior of the crystal at different temperatures according to the prediction results;

[0032] Determine the motion and change of defects in the crystal according to the defect behavior, and obtain the kinetic process of defects according to the motion and change.

[0033] A method for detecting and analyzing crystal defects provided by the present invention performs regression analysis on the concentration, type, migration dynamics, and kinetic process of defects, extracts characteristic parameters of defects, and realizes defect detection and analysis of the crystal according to the characteristic parameters, including:

[0034] Perform regression analysis on the concentration, type, migration dynamics, and kinetic process of defects, obtain defect property information according to the analysis results, and predict the failure mode of the identified defects based on the defect property information;

[0035] Obtain the formation mechanism and propagation path of defects according to the prediction results;

[0036] Extract characteristic parameters of defects according to the formation mechanism and propagation path of the defects, obtain corresponding repair strategies according to the characteristic parameters, and realize defect detection and analysis of the crystal according to the repair strategies.

[0037] A crystal defect detection and analysis method provided by the present invention performs regression analysis on the concentration, type, migration kinetics, and kinetic process of defects, obtains defect property information according to the analysis results, and predicts the failure mode of the identified defects based on the defect property information, including:

[0038] Determine the change parameters of multiple data items according to the concentration, type, migration kinetics, and kinetic process of defects, and construct a change amount monitoring sequence for each data item based on the change parameters;

[0039] Obtain the abnormal characteristics of each data item through the change amount monitoring sequence of each data item, and perform regression matching analysis on the abnormal characteristics to determine the predicted defect type of each data item;

[0040] Take the predicted defect types that repeatedly appear in all data items as the qualitative defects of the crystal;

[0041] Retrieve the explicit characteristics and implicit characteristics of the defect description of the qualitative defect from the database, and determine the crystal integrity under the qualitative defect according to the explicit characteristics and implicit characteristics of the defect description;

[0042] Determine the defect property information of the qualitative defect based on the crystal integrity, and the defect property information includes: general defect information, serious defect information, and major defect information;

[0043] Obtain the mass degradation and failure evolution relationship function of the crystal under the condition of coexistence of multiple defects according to the defect property information of the qualitative defect;

[0044] Perform basic defect independent irrelevance analysis on each identified defect and other identified defects to obtain the analysis results;

[0045] Determine the correlation coefficient between each identified defect and other identified defects according to the analysis results;

[0046] Take the correlation coefficient as the parameter value of the mass degradation and failure evolution relationship function of the crystal under the condition of coexistence of multiple defects and perform function calculation to obtain the function calculation result;

[0047] Determine the failure mode of each identified defect according to the function calculation result, where the failure mode includes: double defect coverage failure and multi-defect hidden failure.

[0048] On the other hand, a crystal defect detection and analysis system provided by the present invention includes:

[0049] An acquisition module: By heating and cooling the crystal, obtain the resistivity of the crystal under different sintering conditions, and determine the concentration of defects according to the resistivity;

[0050] The first determination module: Determine that the behavior of carriers is affected by the attraction and inhibition of defects according to the charge injection technique, determine the current response and resistance change after injecting carriers according to the attraction and inhibition effects, and determine the type and concentration of defects according to the current response and resistance change;

[0051] The second determination module: Obtain the light absorption process of the crystal at different temperatures according to the light absorption spectrum, determine the transition time and relaxation time of photoelectrons, and determine the migration dynamics of defects according to the transition time and relaxation time of photoelectrons;

[0052] The creation module: Create a numerical model, and predict the defect behavior of the crystal at different temperatures according to temperature-dependent carrier transport and defect motion, and obtain the kinetic process of defects;

[0053] The extraction module: Perform regression analysis on the concentration, type, migration dynamics and kinetic process of defects, extract the characteristic parameters of defects, and realize defect detection and analysis of the crystal according to the characteristic parameters.

[0054] Compared with the prior art, the beneficial effects of this application are as follows:

[0055] By determining the concentration, type, migration dynamics and kinetic process of defects, and performing regression analysis to determine the characteristic parameters of defects, the detection speed can be improved. At the same time, the detection depth of the crystal is relatively deep, not staying on the surface, and the defects inside the crystal can be accurately obtained, improving the performance of the material, accurately used in the production of semiconductor devices, and improving the production efficiency of the devices. Description of the Drawings

[0056] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0057] Figure 1 It is a schematic flowchart of a crystal defect detection and analysis method provided by an embodiment of the present invention;

[0058] Figure 2 It is a schematic structural diagram of a crystal defect detection and analysis system provided by an embodiment of the present invention. Detailed Embodiments

[0059] To make the objectives, technical solutions, and advantages of the present invention clearer, the following will clearly and completely describe the technical solutions in the present invention in conjunction with the accompanying drawings in the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts belong to the scope of protection of the present invention.

[0060] Embodiment 1:

[0061] A crystal defect detection and analysis method provided by an embodiment of the present invention, as Figure 1 shown, the method mainly includes the following steps:

[0062] Step 1: By heating and cooling the crystal, obtain the resistivity of the crystal under different sintering conditions, and determine the defect concentration according to the resistivity;

[0063] Step 2: Determine that the behavior of the carriers is affected by the attraction and inhibition of the defects according to the charge injection technology, determine the current response and resistance change after injecting the carriers according to the attraction and inhibition effects, and determine the type of the defects according to the current response and resistance change;

[0064] Step 3: Obtain the light absorption process of the crystal under different lights according to the light absorption spectrum, determine the transition time and relaxation time of the photoelectrons, and determine the migration dynamics of the defects according to the transition time and relaxation time of the photoelectrons;

[0065] Step 4: Create a numerical model, and predict the defect behavior of the crystal at different temperatures according to the temperature-dependent carrier transport and defect movement, and obtain the kinetic process of the defects;

[0066] Step 5: Perform a regression analysis on the defect concentration, type, migration dynamics, and kinetic process, extract the characteristic parameters of the defects, and realize the defect detection and analysis of the crystal according to the characteristic parameters.

[0067] In this embodiment, sintering is to mix a variety of metal powders or alloy powders with a small amount of binder and then sinter at high temperature to obtain the required shape and performance.

[0068] In this embodiment, resistivity is a physical quantity that describes the degree of obstruction of a material to the flow of electric current.

[0069] In this embodiment, the defect concentration refers to the ratio between the number of defects in a material or crystal and the unit volume or area. The higher the defect concentration, the worse the quality of the material.

[0070] In this embodiment, the charge injection technology is a semiconductor process that can inject positive or negative charges into a semiconductor material to improve its electrical properties.

[0071] In this embodiment, carriers are charges that can move freely in a semiconductor, including positive charges (holes) and negative charges (free electrons).

[0072] In this embodiment, after injecting carriers, the resistance value of the material changes, resulting in a change in current. After injecting carriers, the conductivity of the material increases, which leads to a decrease in the resistance value. Therefore, after charge injection, the relationship between current and voltage should be inversely proportional.

[0073] In this embodiment, the types of defects in the crystal include:

[0074] Intrinsic defects: They are the inherent properties of the material itself, such as dislocations and grain boundaries.

[0075] Extrinsic defects: They are defects formed during crystal growth or processing, such as mechanical damage and chemical corrosion.

[0076] Structural defects: They are defects caused by the asymmetry of the internal structure of the crystal, such as twin bonds and holes.

[0077] In this embodiment, the time required for an atom to transfer from one energy level to another is called the transition time.

[0078] In this embodiment, the relaxation time is the time required to describe an atom returning to its equilibrium position under an external action.

[0079] In this embodiment, the migration kinetics of defects studies the transport and diffusion processes of defects in the material. In this process, defects will continuously move and evolve as the dislocations move, and will also be affected by the surrounding environment and undergo various forms of changes.

[0080] In this embodiment, the characteristic parameters of defects include: concentration, diffusion coefficient, migration energy, and change slope.

[0081] The beneficial effects of the above technical solutions are: By determining the concentration, type, migration kinetics, and kinetic processes of defects, and performing regression analysis to determine the characteristic parameters of defects, the detection speed can be improved. At the same time, the detection depth of the crystal is relatively deep and does not stay on the surface, so that the defects inside the crystal can be accurately obtained, the performance of the material can be improved, and it can be accurately used in the production of semiconductor devices, thereby improving the production efficiency of the devices.

[0082] Embodiment 2:

[0083] Based on Embodiment 1, in this embodiment of the present invention, by heating and cooling the crystal, the resistivity of the crystal under different sintering conditions is obtained, and the concentration of defects is determined according to the resistivity, including:

[0084] Determine the type of the target crystal according to X-ray diffraction, and determine the heating temperature range and cooling temperature range of the crystal according to the type;

[0085] Heat and cool the crystal at different temperatures according to the heating temperature range and cooling temperature range in combination with the heating rate and cooling rate;

[0086] Obtain the resistivity of the crystal under different sintering conditions based on the four-point probe method according to the heating and cooling results;

[0087] Determine the movement of electrons according to the resistivity, and determine the conductivity of the crystal according to the movement of electrons;

[0088] Determine the conductivity of the crystal according to the conductivity of the crystal in combination with the physical parameters of the crystal, and determine the concentration of defects according to the conductivity.

[0089] In this embodiment, X-ray diffraction is a method for detecting and analyzing the structure and properties of substances. By studying the phenomena such as bending, scattering, and absorption of atoms or ions under X-ray irradiation, information about the crystal can be obtained.

[0090] In this embodiment, a crystal is a solid material composed of atoms, ions, or molecules with an ordered arrangement, and the internal particles are arranged regularly, such as: single crystal, polycrystal, amorphous state.

[0091] In this embodiment, the temperature range during the heating process of the crystal will affect its structure and properties. Different types of crystals have different heating temperature ranges, such as:

[0092] Single crystal (such as quartz, silicon, etc.): It is in a solid state at room temperature and undergoes a structural change when heated to about 700 degrees Celsius, forming a high-melting-point covalent bond.

[0093] Polycrystalline (such as silicon carbide, silicon nitride, etc.): It has high thermal stability and chemical stability. Generally, heating treatment in the range of 600 - 1100 degrees Celsius can obtain a better crystalline structure.

[0094] In this embodiment, the heating rate of the crystal refers to the rate of change of temperature during the heating process of the crystal.

[0095] In this embodiment, the four-point probe method is a method for measuring the internal electric field strength of semiconductor materials. By measuring the potential differences at four test points, the internal electric field strength of the semiconductor material can be calculated, and thus more accurate material parameters can be obtained.

[0096] In this embodiment, sintering is to mix a variety of metal powders or alloy powders with a small amount of binder and then sinter at high temperature to obtain the required shape and properties.

[0097] In this embodiment, resistivity is a physical quantity that describes the degree of obstruction of a material to the flow of electric current.

[0098] In this embodiment, the conductivity of a crystal refers to the ability of electrons in the crystal to move freely and participate in current conduction.

[0099] In this embodiment, the physical parameters of the crystal include: density, Young's modulus, and coefficient of thermal expansion.

[0100] In this embodiment, the conductivity of a crystal refers to the ability of the crystal to conduct electric current.

[0101] The beneficial effects of the above technical solution are as follows: By determining the heating temperature range and cooling temperature range according to the type of crystal, obtaining the resistivity of the crystal under different sintering conditions, thereby determining the conductivity of the crystal, obtaining the concentration of defects, and being able to determine the distribution of defects in the crystal, it is possible to better understand the internal structure of the material, evaluate the quality of the material, and improve the reliability and performance of the crystal material.

[0102] Example 3:

[0103] Based on Example 2, in this embodiment of the present invention, according to the charge injection technology, it is determined that the behavior of carriers is affected by the attraction and inhibition of defects. According to the influence of the attraction and inhibition, the current response and resistance change after injecting carriers are determined. According to the current response and resistance change, the type of defects is determined, including:

[0104] External charges are introduced into the crystal through ion implantation, and the region containing the carrier injection region is continuously scanned to obtain the surface potential map of the scanned region;

[0105] According to the surface potential map, the behavior ability of carriers in the crystal is determined, and according to the behavior ability, the influence of the attraction and inhibition of carriers by defects is determined;

[0106] According to the influence of the attraction and inhibition, the electrical parameters after injecting carriers are determined;

[0107] According to the electrical parameters, the current response and resistance change are determined;

[0108] According to the current response and resistance change, the response parameters and the resistance change trend are determined. According to the response parameters and the resistance change trend, the type of defects is determined.

[0109] In this embodiment, ion implantation is a doping technology in semiconductor processes, mainly used to improve the conductivity and electrical characteristics of semiconductor materials, and can accurately dope specific types of external charges into semiconductor materials to achieve the desired electrical effects.

[0110] In this embodiment, carriers are charges that can move freely in a semiconductor, including positive charges (holes) and negative charges (free electrons).

[0111] In this embodiment, a surface potential map refers to an image obtained by measuring and plotting the electrochemical potential of a specific surface.

[0112] In this embodiment, the electrical parameters after injecting carriers include: resistivity, conductivity, and mobility.

[0113] In this embodiment, the types of defects in a crystal include:

[0114] Intrinsic defects: These are the inherent properties of the material itself, such as dislocations and grain boundaries.

[0115] Extrinsic defects: These are defects formed during crystal growth or processing, such as mechanical damage and chemical corrosion.

[0116] Structural defects: These are defects caused by asymmetry in the internal structure of the crystal, such as twin bonds and holes.

[0117] The beneficial effects of the above technical solution are as follows: By scanning the region containing carrier injection, obtaining the surface potential map of the scanned area, determining the behavior ability of carriers in the crystal, thereby determining the electrical parameters after injecting carriers, obtaining the type of defects, the specific cause of the problem can be quickly determined, so as to carry out targeted repair and prevention, which helps to shorten the repair time, reduce the maintenance cost, and improve the overall work efficiency.

[0118] Example 4:

[0119] Based on Example 3, in this embodiment of the present invention, the light absorption process of a crystal under different lights is obtained according to the light absorption spectrum, the transition time and relaxation time of photoelectrons are determined, and the migration dynamics of defects are determined according to the transition time and relaxation time of photoelectrons, including:

[0120] Obtain the spectral dark lines of the crystal under lights of different wavelengths according to the light absorption spectrum, and determine the energy level transition of the crystal according to the spectral dark lines;

[0121] Determine the light absorption process of the crystal under different lights according to the energy level transition of the crystal;

[0122] Determine the transition time and relaxation time of photoelectrons according to the light absorption process, and obtain defect information that causes the shortening of carrier lifetime according to the transition time and relaxation time of photoelectrons;

[0123] Determine the migration dynamics of defects according to the defect information.

[0124] In this embodiment, the optical absorption spectrum is a method for measuring the absorption characteristics of a substance to light of different wavelengths. When light irradiates a substance, an absorption phenomenon occurs, that is, part of the light is absorbed and converted into heat energy.

[0125] In this embodiment, spectral dark lines refer to that in spectral analysis, light of certain specific wavelengths will be absorbed, resulting in the darkening of spectral lines near these wavelengths. The generation of these absorption lines is due to the absorption and scattering of light by the atoms and molecules of the substance, causing the absorption of light.

[0126] In this embodiment, the energy level transition of a crystal means that when an electron is injected into a crystal, it will enter an atomic orbital that contains multiple different energy levels. When the electron transitions from one energy level to another, an energy level transition process occurs. This process will cause the transfer of energy and make the electron transition from a low energy level to a high energy level, or vice versa.

[0127] In this embodiment, optical absorption means that when light irradiates a substance, atoms or molecules in the substance absorb photons of certain specific wavelengths. These photons interact with the electrons of the atoms and raise them from a lower energy state to a higher energy state. This process will cause the temperature of the substance to increase and emit photons of the same wavelength.

[0128] In this embodiment, the time required for an atom to transfer from one energy level to another is called the transition time.

[0129] In this embodiment, the relaxation time is the time required to describe an atom returning to its equilibrium position under an external action.

[0130] In this embodiment, the defect information that causes the shortening of the carrier lifetime includes: radiation damage, hot carrier scattering, chemical defects.

[0131] In this embodiment, the migration dynamics of defects studies the transport and diffusion processes of defects in a material. In this process, defects will continuously move and evolve as dislocations move, and will also undergo various forms of changes under the influence of the surrounding environment.

[0132] The beneficial effects of the above technical solution are: obtaining defect information that causes the shortening of the carrier lifetime based on the transition time and relaxation time of photo - electrons, thereby determining the migration dynamics of defects, better understanding the movement laws of defects in materials, helping to optimize the performance of materials, and improving the reliability of materials.

[0133] Example 5:

[0134] Based on Example 4, an embodiment of the present invention creates a numerical model, predicts the defect behavior of a crystal at different temperatures according to temperature-dependent carrier transport and defect motion, and obtains the kinetic process of the defects, including:

[0135] Create a numerical model according to the Monte Carlo method, and input temperature-dependent carrier transport and defect motion into the numerical model;

[0136] Obtain the prediction results of the numerical model, and determine the defect behavior of the crystal at different temperatures according to the prediction results;

[0137] Determine the motion and change of the defects in the crystal according to the defect behavior, and obtain the kinetic process of the defects according to the motion and change.

[0138] In this embodiment, the Monte Carlo method is a numerical calculation method for solving a numerical model by randomly sampling to simulate an actual problem. It uses a large number of independent and identically distributed random variables as samples, analyzes these samples, and thus obtains the probability distribution of the true parameters.

[0139] In this embodiment, a numerical model is a computer program that uses mathematical formulas and algorithms to simulate and predict natural and social phenomena. It is usually based on certain assumptions and constraints of an actual system and uses numerical calculation methods to simulate and analyze the dynamic behavior of the system.

[0140] In this embodiment, temperature-dependent carrier transport refers to the process of the movement and transport of electrons and holes in a semiconductor material, which is affected by temperature and changes. As the temperature increases, the average energy of the carriers increases, resulting in more carriers obtaining enough energy to migrate, which increases the charge density and accelerates the charge transport.

[0141] In this embodiment, defect motion refers to the phenomenon that various atoms or ions existing in the crystal structure vibrate, rotate or move irregularly.

[0142] In this embodiment, defect behavior includes: generation, movement, merger, and disappearance of defects.

[0143] In this embodiment, the kinetic process of the defects refers to the forces and torques exerted on the defects during irregular motion, as well as their motion laws.

[0144] The beneficial effects of the above technical solutions are: determining the defect behavior of the crystal at different temperatures according to the prediction results of the numerical model, thereby determining the motion and change of the defects in the crystal, predicting the performance of the material under different conditions, determining the stability of the defects, and improving the use efficiency of the material.

[0145] Example 6:

[0146] Based on Example 5, in the embodiment of the present invention, regression analysis is performed on the concentration, type, migration kinetics, and kinetic process of defects to extract characteristic parameters of the defects, and defect detection and analysis of the crystal are realized according to the characteristic parameters, including:

[0147] Perform regression analysis on the concentration, type, migration kinetics, and kinetic process of defects, obtain defect property information according to the analysis results, and predict the failure mode of the identified defects based on the defect property information;

[0148] Obtain the formation mechanism and propagation path of the defects according to the prediction results;

[0149] Extract the characteristic parameters of the defects according to the formation mechanism and propagation path of the defects, obtain the corresponding repair strategy according to the characteristic parameters, and realize defect detection and analysis of the crystal according to the repair strategy.

[0150] In this embodiment, multiple measurement data of the defects include: the type of the defects, the concentration of the defects, the migration kinetics of the defects, and the kinetic process of the defects.

[0151] In this embodiment, regression analysis is a data analysis method used to determine the quantitative relationship of mutual dependence between two or more variables. Regression analysis can be used to evaluate the relationship strength between independent variables (explanatory variables) and dependent variables (response variables), predict the changes of dependent variables, and understand the patterns in the data, such as: simple regression, multiple regression, and multiple linear regression.

[0152] In this embodiment, defect property information refers to the specific characteristics and related information of the defects existing in the crystal, such as: severity, location, and quantity.

[0153] In this embodiment, failure mode prediction refers to analyzing potential failure modes and their consequences, predicting and preventing the occurrence of these failures in advance. Failure modes refer to various fault forms that the crystal may exhibit. For example, in the crystal, possible failure modes include surface roughness and excessive impurities.

[0154] In this embodiment, defects in the crystal refer to the deviation between the internal structure of the crystal and the ideal perfect lattice structure. These defects can affect the physical, chemical, and mechanical properties of the material, such as:

[0155] Point defects: refer to defects occurring at the atomic scale, such as:

[0156] Vacancies: positions where one or more atoms in the lattice are missing. Vacancies are usually generated by thermal excitation at high temperatures and can also be introduced by irradiation or plastic deformation.

[0157] Interstitial atom: Extra atoms appear in positions that should be empty in the crystal lattice. These atoms are usually caused by excessive addition or external pressure.

[0158] Impurity atom: Atoms different from the matrix element occupy normal positions in the crystal lattice. This is usually due to the mixing of impurity elements during material synthesis.

[0159] Line defect: Refers to dislocation, existing on a one-dimensional line in the crystal lattice, such as:

[0160] Edge dislocation: On a line in the crystal lattice, a part of the crystal has slipped relative to another part.

[0161] Screw dislocation: A part of the crystal lattice rotates and slips along the dislocation line.

[0162] Mixed dislocation: Has the characteristics of both edge and screw dislocations simultaneously.

[0163] The formation mechanism of dislocations is usually related to plastic deformation, temperature change, grain boundary movement, and external stress.

[0164] Plane defect: Refers to grain boundaries and sub-grain boundaries, existing between grains or between different orientation regions within grains, such as:

[0165] Grain boundary: The interface between adjacent grains, usually having higher energy.

[0166] Sub-grain boundary: The interface within a grain composed of small regions with slightly different orientations.

[0167] The formation of grain boundaries is usually related to factors such as the cooling rate, composition distribution, and external stress during the crystallization process.

[0168] In this embodiment, defects in the crystal not only form inside the crystal but also propagate within it. The propagation path of the defects depends on the type of defects and their distribution in the crystal, such as:

[0169] The propagation of point defects occurs by diffusion within the material.

[0170] The propagation of line defects is along the slip or climb of the crystal lattice plane, thus propagating within the material.

[0171] The propagation of plane defects is achieved through the migration of grain boundaries.

[0172] In this embodiment, the characteristic parameters of the defects include: concentration, diffusion coefficient, migration energy, and change slope.

[0173] The beneficial effects of the above technical solution are as follows: By performing regression analysis on the measurement data of defects to obtain defect property information and conducting failure mode prediction, the formation mechanism and propagation path of defects can be determined, enabling the rapid positioning of the defects in the crystal, accurately obtaining the corresponding repair strategy, improving the effectiveness of the strategy, and reducing the performance problems caused by defects.

[0174] Example 7:

[0175] Based on Example 6, in this embodiment of the present invention, regression analysis is performed on the concentration, type, migration kinetics, and kinetic process of defects. According to the analysis results, defect property information is obtained, and failure mode prediction is performed on the identified defects based on the defect property information, including:

[0176] Determine the change parameters of multiple data items according to the concentration, type, migration kinetics, and kinetic process of defects, and construct a change amount monitoring sequence for each data item based on the change parameters;

[0177] Obtain the abnormal characteristics of each data item through the change amount monitoring sequence of each data item, and perform regression matching analysis on the abnormal characteristics to determine the predicted defect type of each data item;

[0178] Take the predicted defect types that repeatedly appear in all data items as the qualitative defects of the crystal;

[0179] Retrieve the explicit characteristics and implicit characteristics of the defect description of the qualitative defect from the database, and determine the crystal integrity under the qualitative defect according to the explicit characteristics and implicit characteristics of the defect description;

[0180] Determine the defect property information of the qualitative defect based on the crystal integrity. The defect property information includes: general defect information, serious defect information, and major defect information;

[0181] Obtain the function of mass degradation and failure evolution relationship of the crystal under the condition of coexistence of multiple defects according to the defect property information of the qualitative defect;

[0182] Perform basic defect independent irrelevance analysis on each identified defect and other identified defects to obtain the analysis results;

[0183] Determine the correlation coefficient between each identified defect and other identified defects according to the analysis results;

[0184] Take the correlation coefficient as the parameter value of the function of mass degradation and failure evolution relationship of the crystal under the condition of coexistence of multiple defects and perform function calculation to obtain the function calculation result;

[0185] Determine the failure mode of each identified defect according to the function calculation result. Among them, the failure modes include: double defect coverage failure and multi-defect hidden failure.

[0186] In this embodiment, the change parameter of the data item is, for example, the defect type. The change parameter of the defect type generally refers to the change law of the defect in terms of time, position, nature, etc. For example:

[0187] Time change: Whether the defect changes over time. For example, over time, material fatigue may cause the appearance of defects.

[0188] Position change: Whether the defect changes as the object moves.

[0189] Nature change: Whether the nature of the defect changes with factors such as time and position. For example, the performance of the material changes with temperature.

[0190] In this embodiment, the change amount monitoring sequence of the data item is a tool or method for monitoring the change of the data item and can track the dynamic change of the data.

[0191] In this embodiment, regression matching analysis is a statistical method used to study the relationship between two or more variables.

[0192] In this embodiment, the qualitative defect of the crystal refers to the inherent defect existing in the crystal structure, and these defects may affect the physical, chemical, and mechanical properties of the material.

[0193] In this embodiment, the dominant feature of the defect refers to the obvious and easily recognizable feature that can be directly observed. For example:

[0194] Appearance feature: Such as color change, crack, depression, bulge, abnormal shape.

[0195] Surface feature: Such as scratch, corrosion, wear, oxidation.

[0196] Structure feature: Such as fracture surface, dislocation, strain, stress distribution.

[0197] Performance feature: Such as strength, hardness, toughness, thermal conductivity.

[0198] In this embodiment, the recessive feature of the defect refers to the feature that is not easily noticed or obvious but affects the product performance and safety to a certain extent. For example:

[0199] Material property: Such as crystal structure, impurity, phase transition point.

[0200] Manufacturing process: Such as temperature control, pressure, additive.

[0201] Usage environment: Such as humidity, temperature, pollution.

[0202] Design defect: Such as design error, omission, unreasonableness.

[0203] In this embodiment, quality degradation refers to the phenomenon that during the use of a crystal, its performance gradually decreases over time until it fails to meet the expected quality standards.

[0204] In this embodiment, the failure evolution relationship function is a model that describes the relationship between product failure modes through the process of evaluating the impacts of factors such as product design, materials, and processes on product failure and determining potential failure modes. A failure mode refers to the type of fault that may occur under specific conditions, and failure refers to the phenomenon where these faults lead to the loss of product function or a decline in performance.

[0205] In this embodiment, the basic defect independence and irrelevance analysis is a method used to evaluate the correlation between two or more defects. This method is mainly based on the principle of "mutual non - influence", believing that if two defects are not related in a certain aspect, their impacts in other aspects may also be different.

[0206] In this embodiment, the correlation coefficient is a statistical indicator used to measure the strength of the relationship between two variables. The value range of the correlation coefficient is from - 1 to 1. The closer it is to 1, the stronger the positive correlation between the two variables; the closer it is to - 1, the stronger the negative correlation between the two variables; and the closer it is to 0, the less obvious the correlation between the two variables.

[0207] The beneficial effects of the above - mentioned technical solution are as follows: By performing regression analysis on the concentration, type, migration kinetics, and kinetic processes of defects, and obtaining defect property information, and predicting the failure modes of the identified defects, the complexity of defect analysis and prediction can be reduced, the analysis efficiency can be improved. Further, crystal failure and faults caused by defects can be avoided, and at the same time, the reliability and safety of the crystal can be enhanced.

[0208] Embodiment 8:

[0209] The present invention provides a crystal defect detection and analysis system, as Figure 2 shown, including:

[0210] An acquisition module: By heating and cooling the crystal, the resistivity of the crystal under different sintering conditions is obtained, and the concentration of defects is determined based on the resistivity.

[0211] A first determination module: According to the charge injection technology, it is determined that the behavior of carriers is affected by the attraction and inhibition of defects. Based on the attraction and inhibition effects, the current response and resistance change after injecting carriers are determined. According to the current response and resistance change, the type and concentration of defects are determined.

[0212] The second determination module: Obtain the optical absorption process of the crystal at different temperatures according to the optical absorption spectrum, determine the transition time and relaxation time of photoelectrons, and determine the migration dynamics of defects according to the transition time and relaxation time of photoelectrons;

[0213] The creation module: Create a numerical model, and predict the defect behavior of the crystal at different temperatures according to temperature-dependent carrier transport and defect motion, and obtain the kinetic process of defects;

[0214] The extraction module: Perform regression analysis on the concentration, type, migration dynamics, and kinetic process of defects, extract the characteristic parameters of defects, and realize defect detection and analysis of the crystal according to the characteristic parameters.

[0215] The beneficial effects of the above technical solutions are as follows: By determining the concentration, type, migration dynamics, and kinetic process of defects, and performing regression analysis to determine the characteristic parameters of defects, the detection speed can be improved. At the same time, the detection depth of the crystal is relatively deep, not staying on the surface, and the defects inside the crystal can be accurately obtained, improving the performance of the material, accurately used in the production of semiconductor devices, and improving the production efficiency of the devices.

[0216] Through the description of the above embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus a necessary general hardware platform, and of course, it can also be implemented by hardware. Based on such an understanding, the essence of the above technical solutions or the part that contributes to the prior art can be embodied in the form of a software product. The computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., including several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each embodiment or some parts of the embodiments.

[0217] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A crystal defect detection and analysis method, characterized in that: include: Step 1: By heating and cooling the crystal, the resistivity of the crystal under different sintering conditions is obtained, and the concentration of defects is determined according to the resistivity; Step 2: Determine that the behavior of carriers is affected by the attraction and inhibition of defects based on the charge injection technique, determine the current response and resistance change after the carriers are injected based on the attraction and inhibition, and determine the type of defect based on the current response and resistance change; Step 3: Obtain the light absorption process of the crystal under different light according to the light absorption spectrum, determine the transition time and relaxation time of the photoelectron, and determine the migration dynamics of the defect according to the transition time and relaxation time of the photoelectron; Step 4: Create a numerical model and predict the defect behavior of the crystal at different temperatures based on temperature-dependent carrier transport and defect motion to obtain the dynamic process of the defect; Step 5: Perform regression analysis on the concentration, type, migration dynamics and dynamic process of the defects, extract characteristic parameters of the defects, and implement defect detection and analysis of the crystal according to the characteristic parameters; Among them, the concentration, type, migration dynamics and kinetic process of the defects are subjected to regression analysis to extract characteristic parameters of the defects, and the defect detection and analysis of the crystal is realized according to the characteristic parameters, including: Performing regression analysis on the concentration, type, migration kinetics and kinetic process of the defects, obtaining defect property information according to the analysis results, and predicting the failure mode of the identified defects based on the defect property information; Obtain the formation mechanism and propagation path of defects based on the prediction results; Extracting characteristic parameters of the defects according to the formation mechanism and propagation path of the defects, obtaining corresponding repair strategies according to the characteristic parameters, and implementing defect detection and analysis of the crystal according to the repair strategies; Among them, the concentration, type, migration kinetics and kinetic process of the defects are subjected to regression analysis, defect property information is obtained according to the analysis results, and failure mode prediction is performed on the identified defects based on the defect property information, including: Determine the change parameters of multiple data items according to the concentration, type, migration kinetics and kinetic process of the defects, and construct a change monitoring sequence for each data item based on the change parameters; Obtain the abnormal features of each data item through the monitoring sequence of the change amount of each data item, and perform regression matching analysis on the abnormal features to determine the predicted defect type of each data item; The predicted defect types that appear repeatedly in all data items are regarded as qualitative defects of the crystal; Retrieving the explicit features of the defect description and the implicit features of the defect description of the qualitative defect from the database, and determining the crystal integrity under the qualitative defect according to the explicit features of the defect description and the implicit features of the defect description; Determine defect property information of qualitative defects based on crystal integrity, wherein the defect property information includes: general defect information, serious defect information and major defect information; Based on the defect property information of qualitative defects, the relationship function between the quality degradation and failure evolution of the crystal under the condition of multiple defects coexisting is obtained; Perform basic defect independent irrelevance analysis on each identified defect and other identified defects to obtain analysis results; Determine the correlation coefficient between each identified defect and other identified defects based on the analysis results; The correlation coefficient is used as the parameter value of the function of the relationship between the quality degradation and failure evolution of the crystal under the condition of coexistence of multiple defects, and the function calculation is performed to obtain the function calculation result; The failure mode of each identified defect is determined according to the function calculation result, wherein the failure mode includes: double defect covering failure and multiple defect hiding failure.

2. The crystal defect detection and analysis method according to claim 1, characterized in that: By heating and cooling the crystal, the resistivity of the crystal under different sintering conditions is obtained, and the concentration of defects is determined based on the resistivity, including: Determine the type of target crystal according to X-ray diffraction, and determine the heating temperature range and cooling temperature range of the crystal according to the type; Heating and cooling the crystal at different temperatures according to the heating temperature range and the cooling temperature range combined with the heating rate and the cooling rate; According to the heating and cooling results, the resistivity of the crystal under different sintering conditions is obtained based on the four-point probe method; determining the movement of electrons based on the resistivity, and determining the conductivity of the crystal based on the movement of the electrons; The electrical conductivity of the crystal is determined according to the electrical conductivity of the crystal in combination with the physical parameters of the crystal, and the concentration of defects is determined according to the electrical conductivity.

3. The crystal defect detection and analysis method according to claim 1, characterized in that: The charge injection technique determines that the behavior of carriers is affected by the attraction and inhibition of defects. The current response and resistance change after carrier injection are determined based on the attraction and inhibition. The defect type is determined based on the current response and resistance change, including: External charges are introduced into the crystal by ion implantation, and the region including the carrier injection region is continuously scanned to obtain a surface potential map of the scanned region; Determining the behavior of carriers in the crystal based on the surface potential map, and determining the influence of the attraction and inhibition of the defects on the carriers based on the behavior; Determine the electrical parameters after carrier injection based on the effects of attraction and inhibition; Determining a current response and a resistance change according to the electrical parameters; Response parameters and resistance change trends are determined according to the current response and the resistance change, and the type of defect is determined according to the response parameters and the resistance change trends.

4. The crystal defect detection and analysis method according to claim 1, characterized in that: Obtain the light absorption process of the crystal under different light according to the light absorption spectrum, determine the transition time and relaxation time of the photoelectron, and determine the migration dynamics of the defect according to the transition time and relaxation time of the photoelectron, including: Acquire the dark lines of the spectrum of the crystal under light of different wavelengths according to the light absorption spectrum, and determine the energy level transition of the crystal according to the dark lines of the spectrum; Determining the light absorption process of the crystal under different light according to the energy level transition of the crystal; Determining the transition time and relaxation time of the photoelectron according to the light absorption process, and obtaining defect information that causes the carrier lifetime to be shortened according to the transition time and relaxation time of the photoelectron; Migration kinetics of the defect are determined based on the defect information.

5. The crystal defect detection and analysis method according to claim 1, characterized in that: Create numerical models and predict the defect behavior of crystals at different temperatures based on temperature-dependent carrier transport and defect motion to obtain the dynamics of defects, including: Creating a numerical model based on the Monte Carlo method and inputting temperature-dependent carrier transport and defect motion into the numerical model; Obtain the prediction results of the numerical model and determine the defect behavior of the crystal at different temperatures based on the prediction results; The movement and change of the defect in the crystal are determined according to the defect behavior, and the dynamic process of the defect is obtained according to the movement and change.

6. A crystal defect detection and analysis system, characterized in that: include: Acquisition module: obtains the resistivity of the crystal under different sintering conditions by heating and cooling the crystal, and determines the concentration of defects based on the resistivity; The first determination module: determines, based on the charge injection technology, that the behavior of carriers is affected by the attraction and inhibition of defects, determines the current response and resistance change after the carriers are injected based on the attraction and inhibition, and determines the type and concentration of defects based on the current response and resistance change; The second determination module: obtains the light absorption process of the crystal at different temperatures according to the light absorption spectrum, determines the transition time and relaxation time of the photoelectron, and determines the migration dynamics of the defect according to the transition time and relaxation time of the photoelectron; Creation module: Create numerical models and predict the defect behavior of crystals at different temperatures based on temperature-dependent carrier transport and defect motion to obtain the dynamic process of defects; Extraction module: Perform regression analysis on the concentration, type, migration dynamics and kinetic process of defects, extract characteristic parameters of defects, and implement defect detection and analysis of crystals based on the characteristic parameters; Among them, the concentration, type, migration dynamics and kinetic process of the defects are subjected to regression analysis to extract characteristic parameters of the defects, and the defect detection and analysis of the crystal is realized according to the characteristic parameters, including: Performing regression analysis on the concentration, type, migration kinetics and kinetic process of the defects, obtaining defect property information according to the analysis results, and predicting the failure mode of the identified defects based on the defect property information; Obtain the formation mechanism and propagation path of defects based on the prediction results; Extracting characteristic parameters of the defects according to the formation mechanism and propagation path of the defects, obtaining corresponding repair strategies according to the characteristic parameters, and implementing defect detection and analysis of the crystal according to the repair strategies; Among them, the concentration, type, migration kinetics and kinetic process of the defects are subjected to regression analysis, defect property information is obtained according to the analysis results, and failure mode prediction is performed on the identified defects based on the defect property information, including: Determine the change parameters of multiple data items according to the concentration, type, migration kinetics and kinetic process of the defects, and construct a change monitoring sequence for each data item based on the change parameters; Obtain the abnormal features of each data item through the monitoring sequence of the change amount of each data item, and perform regression matching analysis on the abnormal features to determine the predicted defect type of each data item; The predicted defect types that appear repeatedly in all data items are regarded as qualitative defects of the crystal; Retrieving the explicit features of the defect description and the implicit features of the defect description of the qualitative defect from the database, and determining the crystal integrity under the qualitative defect according to the explicit features of the defect description and the implicit features of the defect description; Determine defect property information of qualitative defects based on crystal integrity, wherein the defect property information includes: general defect information, serious defect information and major defect information; Based on the defect property information of qualitative defects, the relationship function between the quality degradation and failure evolution of the crystal under the condition of multiple defects coexisting is obtained; Perform basic defect independent irrelevance analysis on each identified defect and other identified defects to obtain analysis results; Determine the correlation coefficient between each identified defect and other identified defects based on the analysis results; The correlation coefficient is used as the parameter value of the function of the relationship between the quality degradation and failure evolution of the crystal under the condition of coexistence of multiple defects, and the function calculation is performed to obtain the function calculation result; The failure mode of each identified defect is determined according to the function calculation result, wherein the failure mode includes: double defect covering failure and multiple defect hiding failure.

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