A trench gate RC-IGBT device structure

CN119300452BActive Publication Date: 2025-03-18QINGDAO ZHONGWEIXIN ELECTRONICS CO LTD
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Patent Information

Application Number
CN202411794855.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-12-09
Publication Date
2025-03-18
Estimated Expiration
2044-12-09

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Abstract

The present invention discloses a trench gate RC-IGBT device structure, and the present invention relates to the technical field of semiconductor devices. The trench gate RC-IGBT device structure adopts a trench gate plus a field stop layer structure inside the IGBT substrate, thereby increasing the surface channel density, improving the near-surface carrier concentration, reducing the chip area, and ensuring the operating power of the chip at the same time. The IGBT substrate, power chip, and driver chip are integrated and packaged through a frame-E-space DBC composite structure, ensuring the use effect while effectively preventing electromagnetic interference and false triggering, and further ensuring the operating stability of the chip.
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Citation Information

Patent Citations

  • Trench RC-IGBT device structure

    CN212365970U

  • Preparation method of embedded packaging device

    CN112768362A

  • RC-IGBT with hole path region

    CN115939171A